US20150348974A1 - Low energy ion implantation of a junction butting region - Google Patents
Low energy ion implantation of a junction butting region Download PDFInfo
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- US20150348974A1 US20150348974A1 US14/820,667 US201514820667A US2015348974A1 US 20150348974 A1 US20150348974 A1 US 20150348974A1 US 201514820667 A US201514820667 A US 201514820667A US 2015348974 A1 US2015348974 A1 US 2015348974A1
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- junction butting
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- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a junction butting region using low energy ion implantation to reduce parasitic leakage and body-to-body leakage between adjacent FETs that share a common contact in high density memory technologies, such as dynamic random access memory (DRAM) devices and embedded DRAM (eDRAM) devices. A method disclosed may include forming a junction butting region at the bottom of a trench formed in a semiconductor on insulator (SOI) layer using low energy ion implantation and protecting adjacent structures from damage from ion scattering using a protective layer.
Description
- The present invention claims the benefit under 35 U.S.C. §120 as a divisional of presently pending U.S. patent application Ser. No. 14/265,410 filed on Apr. 30, 2014, the entire teachings of which are incorporated herein by reference.
- The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a junction butting region using low energy ion implantation to reduce parasitic leakage and body-to-body leakage between adjacent FETs that share a common contact in high density memory technologies, such as dynamic random access memory (DRAM) devices and embedded DRAM (eDRAM) devices.
- Integrated circuits fabricated in semiconductor on insulator (SOI) technology rely on adjacent field effect transistors (FETs) being electrically isolated from each other. However, when coupled with the need for decreasing the size of the FETs, such as, for example, in very-large-scale integration (VLSI) technologies like high density memory technologies, the very nature of the isolation can create undesired effects in the FETs such as FET to FET leakage and short channel effects.
- According to an embodiment, a method is disclosed. The method may include: forming a junction butting region in an embedded dynamic random access memory (eDRAM) device using low energy ion implantation. The junction butting region may be located directly below a trench formed in a semiconductor on insulator (SOI) layer between a first gate stack and a second gate stack. The first gate stack and the second gate stack may be protected from damage during the low energy ion implantation by a protective layer.
- According to another embodiment, a method is disclosed. The method may include: forming a protective layer over a first gate stack, over a second gate stack, and over a portion of a semiconductor on insulator (SOI) layer between the first gate stack and the second gate stack; removing a portion of the protective layer over the portion of the SOI layer, such that the portion of the SOI layer is exposed and the first gate stack and the second gate stack remain covered by the protective layer; forming a trench in the portion of the SOI layer, the trench having a bottom and a pair of sidewalls, and the trench having a depth less than a thickness of the SOI layer; and doping the SOI layer at the bottom of the trench using a low energy ion implantation technique to form a junction butting region, such that the junction butting region extends from the bottom of the trench down to the isolation layer immediately below the SOI layer.
- According to another embodiment, an eDRAM structure is disclosed. The eDRAM structure may include: a first gate stack and a second gate stack on a semiconductor on insulator (SOI) layer; a source-drain (S-D) region between the first gate stack and the second gate stack, the S D region extending from an upper surface of the SOI layer to an interior region of the SOI layer, and the S-D region having a bottom and a pair of sidewalls; a silicide layer on the S-D region; a protective layer only on the SOI layer, the first gate stack, the second gate stack; and a junction butting region directly below the S-D region, the junction butting region extending from the bottom of the S-D region to an isolation layer immediately below the SOI layer.
- The following detailed description, given by way of example and not intended to limit the invention solely thereto, will best be appreciated in conjunction with the accompanying drawings, in which not all structures may be shown.
-
FIG. 1A is a cross section view illustrating a structure, according to an embodiment of the present invention. -
FIG. 1B is a cross section view illustrating forming gate structures, deep trench (DT) capacitors, and shallow trench isolation (STI) regions on the structure, according an embodiment of the present invention. -
FIG. 2 is a cross section view illustrating forming a protective layer on the structure, according an embodiment of the present invention. -
FIG. 3 is a cross section view illustrating forming a trench in a SOI layer of the structure, according an embodiment of the present invention. -
FIG. 4 is a cross section view illustrating forming a junction butting region at the bottom of the trench, according an embodiment of the present invention. -
FIG. 5 is a cross section view illustrating filling the trench with a doped epitaxial material to form a source-drain (S-D) region, according an embodiment of the present invention. -
FIG. 6 is a cross section view illustrating forming a silicide on the S-D region, according an embodiment of the present invention. -
FIG. 7 is a cross section view illustrating forming a dielectric layer over the protective layer and the silicide, according an embodiment of the present invention. -
FIG. 8 is a cross section view illustrating forming a contact in the dielectric layer, according an embodiment of the present invention. - The drawings are not necessarily to scale. The drawings are merely schematic representations, not intended to portray specific parameters of the invention. The drawings are intended to depict only typical embodiments of the invention. In the drawings, like numbering represents like elements.
- Detailed embodiments of the claimed structures and methods are disclosed herein; however, it can be understood that the disclosed embodiments are merely illustrative of the claimed structures and methods that may be embodied in various forms. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of this invention to those skilled in the art.
- For purposes of the description hereinafter, the terms “upper”, “lower”, “right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, and derivatives thereof shall relate to the disclosed structures and methods, as oriented in the drawing figures. It will be understood that when an element such as a layer, region, or substrate is referred to as being “on”, “over”, “beneath”, “below”, or “under” another element, it may be present on or below the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on”, “directly over”, “directly beneath”, “directly below”, or “directly contacting” another element, there may be no intervening elements present. Furthermore, the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
- In the interest of not obscuring the presentation of embodiments of the present invention, in the following detailed description, some processing steps or operations that are known in the art may have been combined together for presentation and for illustration purposes and in some instances may have not been described in detail. In other instances, some processing steps or operations that are known in the art may not be described at all. It should be understood that the following description is rather focused on the distinctive features or elements of various embodiments of the present invention.
- The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a junction butting region using low energy ion implantation to reduce parasitic leakage and body-to-body leakage between adjacent FETs that share a common contact in high density memory technologies, such as dynamic random access memory (DRAM) devices and embedded DRAM (eDRAM) devices. The present invention may be particularly useful in reducing parasitic leakage in memory devices fabricated on a semiconductor on insulator (SOI) substrate having a very small pitch between individual memory cells that share a common bit line, such as in advanced eDRAM technology.
- A SOI substrate may include an amorphous buried oxide layer (BOX layer), for example, a silicon oxide (SiO2) layer, between an upper single-crystal silicon layer and a supporting silicon substrate which may also be single-crystal silicon. When, for example, a n-channel FET (NFET) is fabricated adjacent to a p-channel FET (PFET), in SOI technology, the adjacent devices (for example, NFET, PFET) may be electrically isolated from each other by trench isolation (trenches filled with a dielectric material such as silicon oxide that extend from the top surface of the upper silicon layer in which the devices are fabricated down to the BOX layer of the SOI substrate. The trench isolation prevents body-to-body leakage between the adjacent devices.
- When a PFET is fabricated adjacent to another PFET (or an NFET is fabricated adjacent to another NFET) the adjacent devices may be electrically isolated from each other by their source-drain regions (S-D regions) which may extend from the top surface of the upper silicon layer in which the devices are fabricated down to the BOX layer. The S-D regions themselves may abut the BOX layer (i.e., a hard butted SOI junction isolation), or a depletion region of the S-D region may abut the BOX layer (i.e., a soft butted SOI junction isolation) to prevent body-to-body leakage between the adjacent devices. The soft butted SOI junction isolation is usually is achieved by deep S-D implantation using high energy ion implantation, for example 20 keV to 50 keV, or more depending on different species. Using these techniques, adjacent devices may share a common S-D region that is relied upon for device isolation. This may allow for a significant decrease in the silicon area required for each device, thereby increasing device density and device performance, i.e., speed.
- However, when butted SOI junction isolation is used in devices where the FET channel length is of the same order of magnitude as the depletion-layer widths of the source and drain junctions, short-channel effects become a significant problem. The channel length is the distance between two S-D regions on either side of the gate of an FET measured parallel to the top surface of the upper silicon layer. The depletion widths are measured under the gate in the same direction as the channel length. Short-channel effects include drain-induced barrier lowering and punch through, surface scattering, velocity saturation, impact ionization and hot electron effects which may be attributed to the short electron drift region of the channel and the lowering of the threshold voltage (Vt) due to the shortened channel length.
- The short channel effect in butted SOI junction isolation devices may be further exaggerated by lateral (i.e., across surrounding devices) scattering of the deep ion implantations normally used to form a junction butting region of the S-D region in the vicinity of the buried oxide layer. The deeper an ion implantation is, the higher the probability of lateral scattering may be. One way to reduce ion scattering and to ensure proper junction butting may be to form a trench in the SOI layer between two gate structures, form a protective nitride layer over all areas except the trench, and perform a low energy ion implantation process to form a junction butting region underneath the trench. Embodiments by which to form the junction butting region using low energy ion implantation are described below in detail with reference to
FIGS. 1A-8 . - Referring now to
FIG. 1A , a cross section view of astructure 100 is shown. Thestructure 100 may be a semiconductor on insulator (SOI)substrate 102. TheSOI substrate 102 may include anSOI layer 108 separated from asemiconductor layer 104 by anisolation layer 106. Theisolation layer 106 may composed of silicon dioxide. In an embodiment, theSOI layer 108 may be composed of single-crystal silicon. - In an embodiment in which the
structure 100 will be used to form a p-channel FET (PFET) device, theSOI layer 108 may be an undoped or lightly doped with n-type dopants, such as for example, phosphorus and arsenic, at a concentration ranging from approximately 1E16 atm/cm3 to approximately 1E19 atm/cm3. In an embodiment in which thestructure 100 will be used to form a n-channel FET (NFET) device, theSOI layer 108 may be an undoped or lightly doped with p-type dopants, such as for example, boron, at a concentration ranging from approximately 1E16 atm/cm3 to approximately 1E19 atm/cm3. In an embodiment, theSOI layer 108 is intrinsic (i.e., completely undoped). TheSOI layer 108 may have a thickness T108 ranging from approximately 20 nm to approximately 300 nm, preferably from approximately 50 nm to approximately 100 nm. - The
semiconductor layer 104 may be composed of doped semiconductor material, such as, a doped crystalline semiconductor material, a doped polycrystalline semiconductor material, or an amorphous semiconductor material that is subsequently annealed to form a doped polycrystalline semiconductor material. The doped semiconductor material may be formed with in-situ doping or implantation. The doped semiconductor material may be selected from doped crystalline silicon, polysilicon, doped polycrystalline germanium, a doped silicon-germanium polycrystalline alloy, a doped silicon carbon polycrystalline alloy, a doped silicon-germanium-carbon polycrystalline alloy, doped polycrystalline gallium arsenide, doped polycrystalline indium arsenide, doped polycrystalline indium phosphide, doped polycrystalline III-V compound semiconductor materials, doped polycrystalline II-VI compound semiconductor materials, doped polycrystalline organic semiconductor materials, and other doped polycrystalline compound semiconductor materials. - The thickness of the
semiconductor layer 104 may range from approximately 1 micron to approximately 10 microns, although lesser and greater thicknesses may also be employed. Thesemiconductor layer 104 may be doped with n-type dopants or p-type dopants. The dopant concentration of thesemiconductor layer 104 may range from approximately 5.0E18 atm/cm3 to approximately 3.0E21 atm/cm3, although lesser and greater dopant concentrations can also be employed. - Referring now to
FIG. 1B , a cross section view illustrating forming an embedded dynamic random access memory (eDRAM) device in thestructure 100 is shown.FIG. 1B illustrates forming a plurality of gate stacks 110 (hereinafter “gate stacks”), a plurality of deep trench capacitors 112 (hereinafter “DT capacitors”), and a plurality of shallow trench isolation (STI) regions 134 (hereinafter “STI regions”) in theSOI substrate 102. - Each of the gate stacks 110 may include a
gate dielectric layer 114 on theSOI layer 108 and agate electrode 116 formed on thegate dielectric layer 114. Optionaldielectric sidewall spacers 118 may be formed on opposite sidewalls of thedielectric layer 114 andgate electrode 116. In an embodiment, thegate electrode 116 may comprise a doped or undoped polysilicon, a metal, or combinations of layers thereof. In an embodiment, thegate dielectric layer 114 may comprise SiO2, silicon nitride (Si3N4) or combinations thereof. In one examplegate dielectric layer 114 may comprise a high K (dielectric constant) material, examples of which include, but are not limited to, metal oxides such as Ta2O5, BaTiO3, HfO2, ZrO2, Al2O3, metal silicates such as HfSixOy or HfSixOyNz and combinations of layers thereof. A high K dielectric material has a relative permittivity above about 10. In one example, thegate dielectric layer 114 may have a thickness ranging from approximately 0.5 nm to approximately 5 nm thick, preferably from approximately 1 nm to approximately 3 nm. The sidewall spacers 118 may be fabricated by deposition of a blanket conformal layer followed by a reactive ion etch (RIE) to remove the conformal layer from horizontal surfaces while the conformal layer on vertical surfaces is not removed or partially removed. - One or more of the gate stacks 110 may be part of a transistor (not shown) that is electrically connected to an active wordline (WL) (not shown) and formed in an
active WL region 120. In addition, one or more of the gate stacks may be located under a passing wordline (not shown) and formed in a passingWL region 122. - The
DT capacitors 112 and of theSTI regions 134 may be formed in theSOI substrate 102 below the gate stacks 110 in the passingWL region 122 before the gate stacks 110 are formed. TheDT capacitors 112 may extend from theSOI layer 108, through theisolation layer 106 and into thesemiconductor layer 104. TheDT capacitors 112 may formed by etching a deep trench into theSOI layer 108, theisolation layer 106, and thesemiconductor layer 104, and then filling the deep trench with a conductive material. It is understood that each of theDT capacitor 112 may have different horizontal cross-sectional area due to the resulting etch profile caused by the variations in the grain orientation of theSOI layer 108, theisolation layer 106, and thesemiconductor layer 104. - The
DT capacitors 112 may include anupper region 124 and alower region 126. Theupper region 124 may be present in theSOI layer 108 and theisolation layer 106. Theupper region 124 may be composed of at least one fill material, preferably a conductive material such as a metallic material or a doped semiconductor material. The at least one fill material can be deposited, for example, by low pressure chemical vapor deposition (LPCVD) or atomic layer deposition (ALD). The metallic material can include at least one of Ta, Ti, W, CoWP, TaN, TiN, and WN. The doped semiconductor material can include doped polysilicon, germanium, a silicon germanium alloy, and/or any doped compound semiconductor material. - The
lower region 126 may extend from anupper surface 130 of thesemiconductor layer 104 into an interior portion of thesemiconductor layer 104. Thelower region 126 may be composed of the same or a similar conductive material as theupper region 124 and may be formed using substantially similar methods. Thelower region 126 may have a node dielectric layer 132 (hereinafter “node dielectric”) formed on its sidewalls and bottom surface. Thenode dielectric 132 may be formed in the deep trench using a conformal deposition process before the conductive material used to form thelower region 126 is deposited. Thenode dielectric 132 may be formed by thermal oxidation, chemical oxidation, thermal nitridation, ALD, chemical CVD, LPCVD, and/or any other suitable methods. - The
node dielectric 132 may be composed of a high-k dielectric material, such as for example, silicon oxide, silicon nitride, silicon oxynitride, or any combination of these materials. In an embodiment, thenode dielectric 132 may be composed of a dielectric metal oxide having a dielectric constant greater than 8.0. Example of dielectric metal oxides that may be used include, for example, hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate, and any combination of these materials. - The
DT capacitors 112 may be electrically connected to a transistor (not shown). The transistor may incorporate the gate stacks 110 in theactive WL region 120. TheDT capacitors 112 may store electrical charges that flow from a bit line (not shown) through a channel (not shown) under one of the gate stacks 110 in theactive WL region 120 when the active WL turns on the transistor. TheDT capacitors 112 may have a minimum capacitance required to provide sufficient retention time and addressability, ranging from approximately 5 fF to approximately 40 fF, preferably from approximately 8 fF to approximately 15 fF. The capacitance of theDT capacitors 112 may be proportional to the surface area of thenode dielectric 132. - The
STI region 134 may be in contact with the gate stacks 110 in the passingWL region 122. TheSTI region 134 may electrically isolate the gate stacks 110 in the passingWL region 122 from theDT capacitors 112, the gate stacks 110 in theactive WL region 120, as well as other devices (not shown) in the passingWL region 122. TheSTI region 134 may be formed by etching a trench (not shown) into theSOI layer 108, theisolation layer 106, and a portion of theupper region 124, and filling the trench with a low-k dielectric material, such as, for example, silicon oxide. The dielectric material may then be planarized so that anupper surface 136 of theSTI region 134 is substantially flush with anupper surface 138 of theSOI layer 108. - Referring now to
FIG. 2 a cross section view illustrating forming aprotective layer 202 on thestructure 100 is shown. In an embodiment, theprotective layer 202 may be composed of a nitride, such as for example, silicon nitride. Theprotective layer 202 may be deposited as a conformal layer over theSOI layer 108, theSTI region 134, and the gate stacks 110 using any conventional deposition technique known in the art, such as, for example, ALD, CVD, physical vapor deposition (PVD), molecular beam deposition (MBD), pulsed laser deposition (PLD), or liquid source misted chemical deposition (LSMCD). A portion of theprotective layer 202 may be removed using conventional lithography and etching techniques to from acontact region 204. In an embodiment, a patterning layer (not shown) may be blanket deposited over theprotective layer 202 using a conventional deposition technique, such as those listed above, and then using conventional photolithography techniques and reactive ion etching (RIE) to remove the portion of theprotective layer 202. In an embodiment, the patterning layer may be removed after the portion of theprotective layer 202 is removed. In another embodiment, the patterning later may remain during further fabrication steps as described in detail below. A portion of theSOI layer 108 may be exposed in thecontact region 204 between twogate stacks 110 in theactive WL region 120. - Referring now to
FIG. 3 , a cross section view illustrating forming atrench 302 in theSOI layer 108 is shown. Thetrench 302 may be formed by removing the portion of theSOI layer 108 exposed in the contact area 204 (FIG. 2 ) using an etching process selective to theprotective layer 202, such as, for example etchants containing fluorine (i.e., CF4, NF3, CHF3 and SF6). Thetrench 302 may extend only partially through the entire thickness T108 of theSOI layer 108, exposing aninterior region 304 of theSOI layer 108. Thetrench 302 may have a bottom 306 and a pair ofsidewalls 308. In an embodiment, the bottom 306 may have a substantially rounded shape. In an embodiment, thetrench 302 may have a depth D302 ranging from approximately 40 nm to 80 nm. - Referring now to
FIG. 4 , a cross section view illustrating forming a low energy junction butting region 402 (hereinafter “junction butting region”) at the bottom of thetrench 302 is shown. Thejunction butting region 402 may be formed by implanting dopants, such as, for example, arsenic or phosphorus for an NFET, or boron or born fluoride for a PFET. The dopants may be implanted into theSOI layer 108 directly below thetrench 302 using a low energy ion implantation technique, for example approximately 2 keV to approximately 10 keV, and preferably approximately 3 keV to approximately 6 keV. In an embodiment, thejunction butting region 402 may have anupper portion 404 adjacent to the pair ofsidewalls 308 of thetrench 302. Theupper portion 404 may have a lower concentration of dopant atoms than the rest of thejunction butting region 402 located below thebottom 306. - In an embodiment, the
junction butting region 402 may be in contact with theisolation layer 106, thereby forming a solid butting. The solid butting may substantially reduce pathways for current to flow between adjacent gate stacks 110, thereby reducing body to body leakage. The low energy ion implantation technique may require less energy to form thejunction butting region 402, and may result in less damaging ion scattering, than conventional techniques. Because thetrench 302 may expose theinterior region 304 of theSOI layer 108, less energy is required to implant the dopant ions in this region than may be required in conventional techniques such as deep source-drain implantation. In addition, theprotective layer 202 may prevent neighboring devices and other portions of theSOI layer 108 from being doped or damaged by the low energy ion implantation technique used to form thejunction butting region 402. Both of these features may reduce the amount of ion scattering in thestructure 100, thereby improving performance and reliability. - Referring now to
FIG. 5 , a cross section view illustrating filling the trench 302 (FIG. 4 ) with a dopedepitaxial material 502 to form a source-drain region 504 (hereinafter “S-D region”). In an embodiment, the dopedepitaxial material 502 may include layers of epitaxial material with adjacent layers having different dopant concentrations so that the dopedepitaxial material 502 achieves a graded doping profile. The dopedepitaxial material 502 may be, for example, silicon carbide (SiC) with phosphorus or arsenic doping for an NFET. In another exemplary embodiment, theepitaxial material 502 could be silicon germanium (SiGe) doped with boron or boron difluoride for a PFET. In an embodiment, theepitaxial material 502 may be formed using in-situ doping. The dopedepitaxial material 502 may be graded such that side portions of theS-D region 504 are lightly doped while the center of theS-D region 504 is more highly doped. This concentration gradient may provide a well-graded junction profile after activation, may reduce junction leakage and may improve performance and yield. - After the
epitaxial material 502 is deposited, thesemiconductor structure 100 may be annealed to activate the dopant atoms in theepitaxial material 502 and form the finalS-D region 504. In an embodiment, the annealing process may include subjecting thestructure 100 to an elevated temperature, ranging from approximately 800° C. to approximately 1000° C., for approximately 1 millisecond. In an embodiment, the annealing process may be a rapid thermal anneal (RTA). During annealing, the individual layers of the dopedepitaxial material 502 may become commingled as one layer with a graded dopant concentration (i.e., dose activation) as discussed above. - Referring now to
FIG. 6 , a cross section view illustrating forming asilicide 602 on theS-D region 504 is shown. Thesilicide 602 may be formed by any known technique for forming silicides known in the art. In an embodiment, thesilicide 602 may be formed by depositing a conductive metal layer (not shown) over theprotective layer 202 and the silicon-containingS-D region 504 using any conventional deposition technique known in the art, such as, for example, ALD, CVD, PVD, MBD, PLD, LSMCD, or sputtering. Examples of conductive metals that may be used include, but are not limited to, platinum, titanium, cobalt, nickel, and alloys thereof. The conductive metal layer may have a thickness ranging from approximately 5 nm to approximately 15 nm. - After the conductive metal layer is deposited, the
structure 100 may be annealed, using any conventional annealing technique known in the art, to cause the conductive metal to react with the silicon in theS-D region 504 and form a silicide. In an embodiment, a rapid thermal annealing technique may be used wherein thestructure 100 is heated to a temperature ranging from approximately 400° C. to approximately 700° C. for a time ranging from approximately 1 s to approximately 60 s. The conductive metal layer may not react with theprotective layer 202 and may be removed after the annealing using conventional techniques, such as a solvent wash, so that only thesilicide 602 remains. - Referring now to
FIG. 7 , a cross section view illustrating forming adielectric layer 702 over theprotective layer 202 and thesilicide 602 is shown. Thedielectric layer 702 may be formed by depositing a blanket layer of dielectric material using any conventional deposition technique known in the art, such as, for example, ALD, CVD, PVD, MBD, PLD, LSMCD, or spin-on deposition. Thedielectric layer 702 may be composed of a low-k dielectric material, such as, for example, an oxide, a polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene (PTFE), hydrogen silsesquioxane (HSQ), methylsilsesquioxane (MSQ), or combinations thereof. After thedielectric layer 702 is deposited, it may be planarized using any conventional planarization technique, such as, for example chemical mechanical planarization (CMP). - Referring now to
FIG. 8 , a cross section view illustrating forming acontact 802 in thedielectric layer 702 is shown. Thecontact 802 may extend from an upper surface of thedielectric layer 702 to an upper surface of thesilicide 602. Thecontact 802 may be formed by patterning and etching thedielectric layer 702, selective to thesilicide 602, using conventional techniques such as photolithography and RIE to form a contact trench (not shown). The contact trench may then be filled with a conductive material using any conventional deposition technique known in the art, such as, for example, ALD, CVD, PVD, MBD, PLD, LSMCD, spin-on deposition, sputtering, or electroplating. In an embodiment, the conductive material may be a metal, such as aluminum or copper. - After the contract trench is filled with the conductive material, the conductive material and the
dielectric layer 702 may be planarized using any conventional planarization technique, such as, for example CMP, so that an upper surface of thecontact 802 is substantially flush with an upper surface of thedielectric layer 702. In an embodiment, thecontact 802 may also include a contact liner (not shown) formed between its sidewalls and thedielectric layer 702. The contact liner may be composed of a nitride, such as for example, titanium nitride and may act as a barrier to prevent the conductive material of thecontact 802 from diffusing into thedielectric layer 702. - Embodiments of the present invention may allow for the fabrication of a
junction butting region 402 in theSOI layer 108 below thetrench 302 that is strongly butted to theisolation layer 106. Thejunction butting region 402 may be formed using a low energy ion implantation technique that may require less energy and may result in less ion scattering as compared to conventional techniques of forming junction butting regions. The use of low energy ion implantation in thetrench 302 may provide a more graded dopant profile in thejunction butting region 402, which in combination with a solidly buttedjunction region 402 in contact with theisolation layer 106, may reduce under junction leakage and cross talk between adjacent devices sharing thesame contact 802. In addition, theprotective layer 202 used to form thetrench 302 may provide further protection theSOI layer 108 and devices (including the gate stacks 110) adjacent to thetrench 302 damage caused by any ion scattering (which may already be reduced by the use of low energy ion implantation. The reduction in ion scattering may increase reliability and performance in devices by reducing damage to the channel regions of theSOI layer 108 below the gate stacks 110 (i.e., short channel defects) in transistors found in eDRAM devices. - The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiment, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (20)
1. An embedded dynamic random access memory (eDRAM) structure comprising:
a first gate stack and a second gate stack on a semiconductor on insulator (SOI) layer;
a source-drain (S-D) region between the first gate stack and the second gate stack, wherein the S-D region extends from an upper surface of the SOI layer to an interior region of the SOI layer, and wherein the S-D region has a bottom and a pair of sidewalls;
a silicide layer on the S-D region;
a protective layer on the SOI layer, the first gate stack, the second gate stack; and
a low energy junction butting region directly below the S-D region, the low energy junction butting region extending from the bottom of the S-D region to an isolation layer immediately below the SOI layer.
2. The eDRAM structure of claim 1 , further comprising:
a dielectric layer on the protective layer and the silicide layer; and
a contact extending from an upper surface of the dielectric layer to an upper surface of the silicide layer.
3. The eDRAM structure of claim 1 , the junction butting region having a rounded bottom surface.
4. The eDRAM structure of claim 1 , the protective layer comprising a nitride.
5. The eDRAM structure of claim 1 , the junction butting region and the S-D region comprising a N-type dopant and the SOI layer comprising a P-type dopant.
6. The eDRAM structure of claim 1 , the junction butting region and the S-D region comprising a P-type dopant and the SOI layer comprising a N-type dopant.
7. The eDRAM structure of claim 1 , further comprising an upper portion of the junction butting region adjacent to and contacting the pair of sidewalls.
8. The eDRAM structure of claim 1 , the junction butting region having a graded dopant profile such that a concentration of a dopant is higher in a first portion of the junction butting region adjacent to the S-D region and lower in a second portion of the junction butting region adjacent to the isolation layer.
9. A memory structure comprising:
a first gate stack and a second gate stack on a semiconductor on insulator (SOI) layer in an active wordline region;
a source-drain (S-D) region in the SOI layer between the first gate stack and the second gate stack, the S-D region extending from an upper surface of the SOI layer to an interior region of the SOI layer and having a bottom surface; and,
a junction butting region in an active word line region directly below the bottom surface of the S-D region, the junction butting region extending from the bottom surface of the S-D region to an isolation layer immediately below the SOI layer and having a width that is less than or equal to a horizontal distance between the first gate stack and the second gate stack.
10. The memory structure of claim 9 , further comprising:
a protective layer on the first gate stack and the second gate stack;
a silicide layer on a top surface of the SOI layer positioned laterally between the first gate stack and the second gate stack and separated from the first gate stack and the second gate stack by the protective layer, the silicide layer being aligned above the S-D region;
a dielectric layer on the protective layer and the silicide layer; and
a contact extending from an upper surface of the dielectric layer to an upper surface of the silicide layer.
11. The memory structure of claim 10 , the protective layer comprising a nitride layer.
12. The memory structure of claim 9 , the S-D region and the junction butting region having rounded bottom surfaces.
13. The memory structure of claim 9 , the junction butting region and the S-D region being doped with a N-type dopant and the SOI layer being doped with a P-type dopant.
14. The memory structure of claim 9 , the junction butting region and the S-D region being doped with a P-type dopant and the SOI layer being doped with an N-type dopant.
15. The memory structure of claim 9 , the S-D region further having vertical sidewalls and the junction butting region further having an upper adjacent to and contacting the vertical sidewalls.
16. The memory structure of claim 9 , the junction butting region having a graded dopant profile such that a concentration of a dopant is higher in a first portion of the junction butting region adjacent to the S-D region and lower in a second portion of the junction butting region adjacent to the isolation layer.
17. A memory structure comprising:
a first gate stack and a second gate stack on a semiconductor on insulator (SOI) layer;
a source-drain (S-D) region in the SOI layer between the first gate stack and the second gate stack, the S-D region comprising:
a trench extending from an upper surface of the SOI layer to an interior region of the SOI layer, the trench having a bottom surface and sidewalls; and,
an epitaxial semiconductor layer having a specific type conductivity filling the trench; and,
a junction butting region in the SOI layer directly adjacent to the bottom surface and the sidewalls,
the junction butting region comprising a dopant implant region having the specific type conductivity, and
the junction butting region extending vertically from the bottom surface to an isolation layer immediately below the SOI layer and having a width that is less than a horizontal distance between the first gate stack and the second gate stack.
18. The memory structure of claim 17 , further comprising:
a protective layer on the first gate stack and the second gate stack;
a silicide layer on a top surface of the SOI layer positioned laterally between the first gate stack and the second gate stack and separated from the first gate stack and the second gate stack by the protective layer, the silicide layer being aligned above the S-D region;
a dielectric layer on the protective layer and the silicide layer; and
a contact extending from an upper surface of the dielectric layer to an upper surface of the silicide layer.
19. The memory structure of claim 17 , the S-D region and the junction butting region having a rounded bottom surfaces.
20. The memory structure of claim 17 , the junction butting region having a graded dopant profile such that a concentration of a dopant having the specific type conductivity is higher in a first portion of the junction butting region adjacent to the S-D region and lower in a second portion of the junction butting region adjacent to the isolation layer.
Priority Applications (1)
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US14/820,667 US20150348974A1 (en) | 2014-04-30 | 2015-08-07 | Low energy ion implantation of a junction butting region |
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US14/265,410 US9136321B1 (en) | 2014-04-30 | 2014-04-30 | Low energy ion implantation of a junction butting region |
US14/820,667 US20150348974A1 (en) | 2014-04-30 | 2015-08-07 | Low energy ion implantation of a junction butting region |
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US11758709B2 (en) | 2019-11-08 | 2023-09-12 | Nanya Technology Corporation | Method for preparing semiconductor device with epitaxial structures |
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KR20200070862A (en) * | 2018-12-10 | 2020-06-18 | 삼성전자주식회사 | Optical element array, optical system and method of manufacturing optical element array |
CN112216736B (en) * | 2019-07-10 | 2024-04-30 | 联华电子股份有限公司 | High electron mobility transistor and method for fabricating the same |
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US20070196990A1 (en) * | 2006-02-22 | 2007-08-23 | Hsiao Tsai-Fu | Method for fabricating metal-oxide semiconductor transistors |
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US6410399B1 (en) | 2000-06-29 | 2002-06-25 | International Business Machines Corporation | Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidization |
TW487910B (en) | 2000-12-18 | 2002-05-21 | United Microelectronics Corp | Manufacturing method of embedded DRAM |
US6709926B2 (en) | 2002-05-31 | 2004-03-23 | International Business Machines Corporation | High performance logic and high density embedded dram with borderless contact and antispacer |
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US11758709B2 (en) | 2019-11-08 | 2023-09-12 | Nanya Technology Corporation | Method for preparing semiconductor device with epitaxial structures |
US11765884B2 (en) * | 2019-11-08 | 2023-09-19 | Nanya Technology Corporation | Semiconductor device with epitaxial structures and method for forming the same |
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