US20150140839A1 - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- US20150140839A1 US20150140839A1 US14/592,090 US201514592090A US2015140839A1 US 20150140839 A1 US20150140839 A1 US 20150140839A1 US 201514592090 A US201514592090 A US 201514592090A US 2015140839 A1 US2015140839 A1 US 2015140839A1
- Authority
- US
- United States
- Prior art keywords
- gas
- plasma generation
- reactive gas
- generation chamber
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 165
- 150000004767 nitrides Chemical class 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 2
- 238000005121 nitriding Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 330
- 235000012431 wafers Nutrition 0.000 description 65
- 238000006243 chemical reaction Methods 0.000 description 34
- 239000010408 film Substances 0.000 description 24
- 230000003647 oxidation Effects 0.000 description 19
- 238000007254 oxidation reaction Methods 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 9
- 238000010926 purge Methods 0.000 description 8
- 238000005192 partition Methods 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- -1 silicon oxide nitride Chemical class 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Definitions
- the present invention relates to a substrate processing apparatus, and in particular, to a substrate processing apparatus configured to use plasma for processing a substrate.
- a substrate processing process using plasma has been performed.
- a substrate processing apparatus which includes a process chamber configured to process a substrate, a plasma generation chamber installed in the process chamber, a gas supply unit configured to supply reactive gas into the plasma generation chamber, a discharge electrode configured to generate plasma in the plasma generation chamber and to excite the reactive gas for generating an active species, and a gas ejection port installed in a side wall of the plasma generation chamber to eject the active species of the reactive gas toward the substrate (for example, refer to Patent Document 1 below).
- a conventional substrate processing apparatus just includes a single type plasma generation chamber and a single type discharge electrode in a process chamber.
- a plurality of substrate processing apparatuses are required according to types of substrate processes.
- costs for processing substrates may be increased.
- a substrate carrying process may be additionally required between substrate processing processes, or a pressure adjusting process or a temperature adjusting process may be additionally required in a process chamber, and thus, productivity in processing substrates may be decreased.
- An object of the present invention is to provide a substrate processing apparatus that can reduce costs of a substrate process using plasma, so as to improve productivity in processing substrates.
- a substrate processing apparatus including: a process chamber in which a substrate is processed; a first plasma generation chamber and a second plasma generation chamber provided at a side of the substrate in the process chamber, each of the first plasma generation chamber and the second plasma generation chamber separated from the process chamber; a reactive gas supply unit configured to supply a reactive gas into the first plasma generation chamber and the second plasma generation chamber; a pair of first discharge electrodes configured to generate plasma and excite the reactive gas by the plasma in the first plasma generation chamber to generate an active species of the reactive gas; a pair of second discharge electrodes configured to generate plasma and excite the reactive gas by the plasma in the second plasma generation chamber to generate the active species of the reactive gas; a first gas ejection port and a second gas ejection port provided at the first plasma generation chamber and the second plasma generation chamber, respectively, each of the first gas ejection port and the second gas ejection port being configured to eject the active species of the reactive gas to the substrate in the process chamber; and a controller configured to control the
- FIG. 1 is a plan cross-sectional view illustrating a process furnace of a substrate processing apparatus suitably used according to a first embodiment of the present invention.
- FIG. 2 is a vertical cross-sectional view taken along line II-II of FIG. 1 .
- FIG. 3 is a vertical cross-sectional view taken along line III-Ill of FIG. 1 .
- FIG. 4 is a schematic view illustrating a gas supply system connected to the process furnace of FIG. 1 .
- FIG. 1 , FIG. 2 , FIG. 3 , and FIG. 4 are schematic views illustrating a process furnace 10 of a substrate processing apparatus properly used according to the current embodiment.
- the process furnace 10 of the substrate processing apparatus is configured as a batch type vertical hot wall type furnace.
- the process furnace 10 includes a reaction tube 11 .
- the reaction tube 11 is formed in a cylindrical shape with a closed upper end and an open lower end.
- the reaction tube 11 is made of a heat resistant material such as quartz (SiO 2 ).
- the reaction tube 11 is vertically disposed and fixedly supported so that the centerline of the reaction tube 11 can be vertical.
- the open lower end of the reaction tube 11 forms a furnace port 13 through which wafers 1 are loaded and unloaded as substrates.
- a process chamber 12 is formed to process the wafers 1 .
- the process chamber 12 is configured to accommodate a boat 2 , which will be described later, as a substrate holder.
- the boat 2 includes a pair of end plates 3 and 4 at upper and lower sides, and a plurality of holding members 5 (in the current embodiment, three holding members 5 ) vertically installed between the end plates 3 and 4 .
- the end plates 3 and 4 and the holding members 5 are made of a heat-resistant material such as quartz or silicon carbide (SiC).
- a plurality of holding grooves 6 are arranged at regular intervals in the longitudinal direction of the holding member 5 in a manner such that the holding grooves 6 of the holding members 5 are open to face each other.
- the wafers 1 can be held by the boat 2 in a state where the wafers 1 are horizontally oriented and vertically arranged in multiple stages with the centers of the wafers 1 being aligned with each other.
- a base 15 is installed as a holder that can air-tightly seal the open lower end of the reaction tube 11 , and a seal cap 17 is installed as a furnace port cover.
- the base 15 is formed in a disk shape.
- the base 15 is made of a metal such as stainless steel.
- a seal ring 18 is installed as a seal member contacting the lower end of the reaction tube 11 .
- a seal ring 18 is installed as a seal member contacting the upper end of the seal cap 17 .
- the seal cap 17 is installed under the base 15 .
- the seal cap 17 is made of a metal such as stainless steel, and formed in a disk shape.
- the seal cap 17 is connected to an arm of a boat elevator (not shown), and is configured to be freely moveable in the vertical direction.
- the boat elevator (not shown) is electrically connected to a controller 240 to be described later.
- a rotation mechanism 19 configured to rotate the boat 2 is installed.
- a rotation shaft 19 a of the rotation mechanism 19 passes through the seal cap 17 and the base 15 , and supports an insulating barrel 7 , having a cylindrical shape, from the lower side.
- the insulating barrel 7 supports the above-described boat 2 from the lower side.
- the wafers 1 can be rotated in the process chamber 12 .
- the insulating barrel 7 is made of a heat resistant material such as quartz or silicon carbide.
- the insulating barrel 7 functions as an insulating member that is configured to suppress heat transferred from a heater 14 to the lower end side of the reaction tube 11 .
- the rotation mechanism 19 is electrically connected to the controller 240 to be described later.
- the heater 14 is installed in a concentric circle shape to surround the reaction tube 11 .
- the heater 14 is supported by a device frame (not shown) of the process furnace 10 , so that the heater 14 is vertically fixed.
- a temperature sensor is installed as a temperature detector. The temperature of the heater 14 is controlled based on temperature information of the temperature sensor.
- the heater 14 and the temperature sensor are electrically connected to the controller 240 to be described later.
- a side wall disposed on the lower side of the reaction tube 11 is connected with a gas exhaust pipe 16 .
- a pressure sensor (not shown), a pressure control device (not shown) configured as an auto pressure controller (APC) valve, and an exhaust device (not shown) configured as a vacuum pump are installed.
- APC auto pressure controller
- an exhaust device (not shown) configured as a vacuum pump
- a first plasma generation chamber 33 having an arc shape is installed in the reaction tube 11 (in the process chamber 12 ), at the space between an inner wall surface of the reaction tube 11 and the outer circumferences of wafers 1 .
- the first plasma generation chamber 33 is separated from the process chamber 12 by a partition wall 34 having a barrel shape and the inner wall surface of the reaction tube 11 .
- a plurality of first gas ejection ports 35 are vertically arrayed. The number of the first gas ejection ports 35 corresponds to the number of wafers 1 to be processed. Height positions of the first gas ejection ports 35 are respectively set to face the space between vertically adjacent wafers 1 held by the boat 2 .
- each of the protecting pipes 25 is vertically installed to conform with the inner wall surface of the reaction tube 11 .
- Each of the protecting pipes 25 has a bent lower end, and passes through the side surface of the reaction tube 11 and protrudes to the outside.
- Each of the protecting pipes 25 is configured by a dielectric.
- Each of the protecting pipes 25 is formed in a thin and long cylindrical pipe shape with a closed upper end and an open lower end. The inside of a hollow part of each of the protecting pipes 25 communicates with the outside (atmosphere) of the process chamber 12 .
- first discharge electrodes 27 are inserted in the protecting pipes 25 , respectively.
- the first discharge electrodes 27 are made of a conductive material.
- Each of the first discharge electrodes 27 is formed in a thin and long rod shape.
- the lower end (exposed holding part) of each of the first discharge electrodes 27 is held in the protecting pipes 25 through an insulating unit (not shown) that can prevent discharging.
- a mechanism configured to purge the inside of the protecting pipes 25 with inert gas may be installed.
- the pair of protecting pipes 25 is not limited to the above-described shape, and thus, the upper ends of the protecting pipes 25 may be bent to pass through the upper side surface of the reaction tube 11 and protrude to the outside.
- the first discharge electrodes 27 may be inserted from the upper side into the protecting pipes 25 , respectively.
- the pair of first discharge electrodes 27 are electrically connected with an output side (secondary side) of a high frequency power source 31 through a matching device 32 configured to adjust impedance.
- the high frequency power source 31 and the matching device 32 are electrically connected to the controller 240 to be described later.
- a first reactive gas supply unit to be described later is configured to supply NH 3 gas as first reactive gas and Ar gas as exciting gas into the first plasma generation chamber 33 .
- high frequency power is supplied from the high frequency power source 31 to the pair of first discharge electrodes 27 , so that plasma can be generated in the first plasma generation chamber 33 , and the Ar can be activated.
- the NH 3 can be indirectly activated.
- the activated NH 3 gas (NH 3 radicals) flows into the process chamber 12 through the first gas ejection ports 35 , and is supplied to surfaces of the wafers 1 .
- a second plasma generation chamber 33 B having an arc shape is installed in the reaction tube 11 (in the process chamber 12 ).
- the second plasma generation chamber 33 B is separated from the process chamber 12 by the partition wall 34 having a barrel shape and the inner wall surface of the reaction tube 11 .
- the partition wall 34 B a plurality of second gas ejection ports 35 B are vertically arrayed.
- the number of the second gas ejection ports 35 B corresponds to the number of wafers 1 to be processed. Height positions of the second gas ejection ports 35 B are respectively set to face the space between vertically adjacent wafers 1 held by the boat 2 .
- each of the protecting pipes 25 B is vertically installed to conform with the inner wall surface of the reaction tube 11 .
- Each of the protecting pipes 25 B has a bent lower end, and passes through the side surface of the reaction tube 11 and protrudes to the outside.
- Each of the protecting pipes 25 B is configured by a dielectric.
- Each of the protecting pipes 25 B is formed in a thin and long cylindrical pipe shape with a closed upper end and an open lower end. The inside of a hollow part of each of the protecting pipes 25 B communicates with the outside (atmosphere) of the process chamber 12 .
- second discharge electrodes 27 B are inserted in the protecting pipes 25 B, respectively.
- the second discharge electrodes 27 B are made of a conductive material.
- Each of the second discharge electrodes 27 B is formed in a thin and long rod shape.
- the lower end (exposed holding part) of each of the second discharge electrodes 27 B is held in the protecting pipes 25 B through an insulating unit (not shown) that can prevent discharging.
- a mechanism configured to purge the inside of the protecting pipes 25 B with inert gas may be installed.
- the upper ends of the pair of protecting pipes 25 B in the second plasma generation chamber 33 B may be bent to pass through the upper side surface of the reaction tube 11 and protrude to the outside.
- the second discharge electrodes 27 B may be inserted from the upper side into the protecting pipes 25 B, respectively.
- the pair of second discharge electrodes 27 B are electrically connected with an output side (secondary side) of a high frequency power source 31 B through a matching device 32 B configured to adjust impedance.
- the high frequency power source 31 B and the matching device 32 B are electrically connected to the controller 240 to be described later.
- a second reactive gas supplying unit to be described later is configured to supply O 2 gas as second reactive gas into the second plasma generation chamber 33 B.
- O 2 gas As second reactive gas is supplied in the second plasma generation chamber 33 B, high frequency power is supplied from the high frequency power source 31 B to the pair of second discharge electrodes 27 B, so that plasma can be generated in the second plasma generation chamber 33 B, and the O 2 gas can be activated.
- the activated O 2 gas (O 2 radicals) flows into the process chamber 12 through the second gas ejection ports 35 B, and is supplied to the surfaces of the wafers 1 .
- a buffer chamber 33 C having an arc shape is installed at the space between the inner wall surface of the reaction tube 11 and the outer circumferences of wafers 1 .
- the buffer chamber 33 C is separated from the process chamber 12 by a partition wall 34 C having a barrel shape and the inner wall surface of the reaction tube 11 .
- a plurality of third gas ejection ports 35 C are arrayed to face the spaces between vertically arrayed wafers 1 .
- the number of the third gas ejection ports 35 C corresponds to the number of wafers 1 to be processed. Height positions of the third gas ejection ports 35 C are respectively set to face the spaces between vertically adjacent wafers 1 held by the boat 2 .
- the inside of the buffer chamber 33 C is provided with dichlorosilane (SiH 2 Cl 2 , referred to as DCS hereinafter) gas as source gas by using a source gas supply unit to be described later.
- the buffer chamber 33 C functions as a gas dispersion space configured to disperse DCS gas to obtain a uniform concentration through buffering.
- the DCS gas supplied in the buffer chamber 33 C flows into the process chamber 12 through the third gas ejection ports 35 C, and is supplied to the surfaces of the wafers 1 .
- the lower part of the side wall of the reaction tube 11 is connected with a first reactive gas supply pipe 301 that is configured to supply NH 3 gas as the first reactive gas into the first plasma generation chamber 33 .
- a gas cylinder 301 a that is a supply source of NH 3 gas
- a mass flow controller 301 b that is a flow rate controller (flow rate control unit)
- a valve 301 c that is an opening and closing valve are installed.
- NH 3 gas supplied from the gas cylinder 301 a is adjusted to a predetermined flow rate by the mass flow controller 301 b , and is allowed to flow in the first reactive gas supply pipe 301 by an opening operation of the valve 301 c , and is supplied into the first plasma generation chamber 33 .
- the lower part of the side wall of the reaction tube 11 is connected with a second reactive gas supply pipe 302 that is configured to supply O 2 gas as the second reactive gas into the second plasma generation chamber 33 B.
- a gas cylinder 302 a that is a supply source of O 2 gas
- a mass flow controller 302 b that is a flow rate controller (flow rate control unit)
- a valve 302 c that is an opening and closing valve are installed.
- O 2 gas supplied from the gas cylinder 302 a is adjusted to a predetermined flow rate by the mass flow controller 302 b , and is allowed to flow in the second reactive gas supply pipe 302 by an opening operation of the valve 302 c , and is supplied into the second plasma generation chamber 33 B.
- the lower part of the side wall of the reaction tube 11 is connected with a source gas supply pipe 304 that is configured to supply DCS gas as the source gas into the buffer chamber 33 C.
- a source gas supply pipe 304 that is configured to supply DCS gas as the source gas into the buffer chamber 33 C.
- a gas cylinder 304 a that is a supply source of DCS gas
- a mass flow controller 304 b that is a flow rate controller (flow rate control unit)
- a valve 304 c that is an opening and closing valve
- a valve 304 d that is an opening and closing valve
- DCS gas supplied from the gas cylinder 304 a is adjusted to a predetermined flow rate by the mass flow controller 304 b , and is allowed to flow in the source gas supply pipe 304 by an opening operation of the valve 304 c , and is supplied into the buffer chamber 33 C.
- the valve 304 c is opened in the state where the valve 304 d is closed, and the opening state of the valve 304 c is held for a predetermined time, and then, when the pressure of DCS gas in the gas stagnant part 304 e reaches a predetermined pressure, the valve 304 c is closed, and the valve 304 d is opened, so that the DCS gas can be supplied in a pulsed manner (flush supply) into the buffer chamber 33 C (into the process chamber 12 ).
- a ratio of the inner volume of the gas stagnant part 304 e to the inner volume of the process chamber 12 may range from 1/1000 to 3/1000.
- the gas stagnant part 304 e may have an inner volume ranging from 100 cc to 300 cc.
- a path of the source gas from the gas stagnant part 304 e to the process chamber 12 may have a flow conductance of 1.5 ⁇ 10 ⁇ 3 m 3 /s or greater.
- a downstream side of the valve 301 c of the first reactive gas supply pipe 301 , a downstream side of the valve 302 c of the second reactive gas supply pipe 302 , and a downstream side of the valve 304 d of the source gas supply pipe 304 are connected respectively through a valve 303 c , a valve 303 d , and a valve 303 e to a downstream end of an Ar gas supply pipe 303 configured to supply, for example, Ar gas functioning as exciting gas, purge gas, or carrier gas. That is, the Ar gas supply pipe 303 is branched into three parts at a downstream side.
- a gas cylinder 303 a that is a supply source of the Ar gas
- a mass flow controller 303 b that is a flow rate controller (flow rate control unit) are installed.
- Ar gas supplied from the gas cylinder 303 a is adjusted to a predetermined flow rate by the mass flow controller 303 b , and is allowed to flow in the first reactive gas supply pipe 301 by an opening operation of the valve 303 c , and is supplied into the first plasma generation chamber 33 .
- the Ar gas is also allowed to flow in the second reactive gas supply pipe 302 by an opening operation of the valve 303 d , and is supplied into the second plasma generation chamber 33 B.
- the Ar gas is also allowed to flow in the source gas supply pipe 304 by an opening operation of the valve 303 e , and is supplied into the buffer chamber 33 C.
- the first reactive gas supply unit is configured by the first reactive gas supply pipe 301 , the gas cylinder 301 a , the mass flow controller 301 b , the valve 301 c , the Ar gas supply pipe 303 , the gas cylinder 303 a , the mass flow controller 303 b , and the valve 303 c .
- a second reactive gas supply unit is configured by the second reactive gas supply pipe 302 , the gas cylinder 302 a , the mass flow controller 302 b , the valve 302 c , the Ar gas supply pipe 303 , the gas cylinder 303 a , the mass flow controller 303 b , and the valve 303 d .
- a source gas supply unit is configured by the source gas supply pipe 304 , the gas cylinder 304 a , the mass flow controller 304 b , the valve 304 c , the valve 304 d , the Ar gas supply pipe 303 , the gas cylinder 303 a , the mass flow controller 303 b , and the valve 303 e.
- an exciting gas supply unit is configured by the Ar gas supply pipe 303 , the gas cylinder 303 a , the mass flow controller 303 b , and the valves 303 c , 303 d , and 303 e.
- the mass flow controllers 301 b , 302 b , 303 b , and 304 b , and the valves 301 c , 302 c , 303 c , 304 c , 303 d , 303 e , and 304 d are respectively and electrically connected to the controller 240 to be described later.
- the controller 240 as a control unit is respectively and electrically connected to the rotation mechanism 19 , the boat elevator (not shown), the heater 14 , the temperature sensor (not shown), the pressure sensor (not shown), the pressure control device (not shown), the exhaust device (not shown), the high frequency power sources 31 and 31 B, the matching devices 32 and 32 B, the mass flow controllers 301 b , 302 b , 303 b , and 304 b , and the valves 301 c , 302 c , 303 c , 304 c , 303 d , 303 e , and 304 d , and mainly controls the whole substrate processing apparatus.
- the controller 240 controls the rotation shaft 19 a of the rotation mechanism 19 to rotate at a predetermined time.
- the controller 240 controls the boat elevator to move upward and downward at a predetermined time.
- the controller 240 adjusts the degree of valve opening of the pressure control device based on pressure information detected by the pressure sensor, and controls the inside of the process chamber 12 to reach a predetermined pressure at a predetermined time.
- the controller 240 adjusts power supplied to the heater 14 based on temperature information detected by the temperature sensor, and controls the inside of the process chamber 12 to achieve a predetermined temperature distribution at a predetermined time, thus controlling wafers 1 disposed in the process chamber 12 to reach a predetermined temperature.
- the controller 240 controls the high frequency power source 31 and 31 B and the matching devices 32 and 32 B, so that plasma can be generated at a predetermined time in the first plasma generation chamber 33 and the second plasma generation chamber 33 B.
- the controller 240 controls the mass flow controllers 301 b , 302 b , 303 b , and 304 b for flow rates, and simultaneously, controls the opening and closing of the valves 301 c , 302 c , 303 c , 304 c , 303 d , 303 e , and 304 d , so as to start or stop supplying gas at predetermined flow rates at predetermined times into the first plasma generation chamber 33 , into the second plasma generation chamber 33 B, and into the buffer chamber 33 C.
- the controller 240 is configured to continuously perform: a first substrate processing operation in which the first reactive gas is supplied into the first plasma generation chamber 33 from a first gas supply system, and plasma is generated in the first plasma generation chamber 33 by using the first discharge electrodes 27 , so as to directly or indirectly excite the first reactive gas for generating an active species of the first reactive gas, and wafers 1 are processed by using the generated active species of the first reactive gas; and a second substrate processing operation in which the second reactive gas is supplied into the second plasma generation chamber 33 B from a second gas supply system, and plasma is generated in the second plasma generation chamber 33 B by using the second discharge electrodes 27 B, so as to directly or indirectly excite the second reactive gas for generating an active species of the second reactive gas, and wafers 1 are processed by using the generated active species of the second reactive gas.
- a process of continuously performing both a nitride operation in which a surface of a wafer 1 is nitrided to form a silicon nitride (SiN) film, and an oxidation operation in which the wafer 1 provided with the SiN film is oxidized to form a silicon oxide nitride (SiON) film for example, a substrate processing process in which a gate insulating film of a metal oxide semiconductor (MOS) type field effect transistor is formed will now be described. In the following description, operations respectively of parts constituting the substrate processing apparatus are controlled by the controller 240 .
- MOS metal oxide semiconductor
- the boat 2 is charged with a plurality of wafers 1 (wafer charging).
- the boat elevator is driven to move the boat 2 upward. Accordingly, as shown in FIG. 1 , FIG. 2 , and FIG. 3 , the boat 2 holding the plurality of wafers 1 is loaded into the process chamber 12 (boat loading).
- the seal cap 17 closes the lower end of the reaction tube 11 through the base 15 and the seal rings 18 . Accordingly, the process chamber 12 is air-tightly sealed.
- the inner atmosphere of the process chamber 12 is exhausted such that the inside of the process chamber 12 reaches a predetermined pressure (for example, 10 Pa to 100 Pa).
- a predetermined pressure for example, 10 Pa to 100 Pa.
- the degree of the valve opening of the pressure control device is feedback controlled based on pressure information detected by the pressure sensor, and the inside of the process chamber 12 reaches a predetermined pressure.
- the heater 14 heats the inside of the process chamber 12 to a predetermined temperature.
- power supplied to the heater 14 is controlled based on temperature information detected by the temperature sensor, the inside of the process chamber 12 reaches at a predetermined temperature (for example, 300° C. to 600° C.).
- the rotation mechanism 19 is operated to start the rotation of the wafers 1 loaded in the process chamber 12 .
- the rotation of the wafers 1 is continually performed until a nitride operation S 3 and an oxidation operation S 4 , which will be described later, are finished.
- the DCS gas and the NH 3 gas are used to form the silicon nitride (SiN) films on the surfaces of the wafers 1 .
- the ALD method is a method in which two or more types of processing gas are alternately supplied one by one onto wafers 1 under predetermined film forming conditions (temperature, time, etc.), and surface reactions of the processing gas on the wafers 1 are used to form thin films including less than one atomic layer to several atomic layers.
- a film thickness can be controlled by controlling the number of cycles for supplying processing gas. For example, if the film forming rate is 1 ⁇ /cycle and it is intended to form a 20- ⁇ film, the process may be repeated 20 cycles.
- an active species (NH 3 radicals) generated by indirectly exciting the NH 3 gas as the first reactive gas in the first plasma generation chamber 33 is supplied into the process chamber 12 , and is brought to surface-react (chemical adsorption) with surface parts of the wafers 1 (first reactive gas supply operation S 31 ).
- the DCS gas is supplied from the buffer chamber 33 C to the inside of the process chamber 12 , and is brought to surface-react (chemical adsorption) with NH 3 chemically adsorbed to the surfaces of the wafers 1 , so as to form SiN films including less than one atomic layer to several atomic layers (source gas supply operation S 32 ).
- the first reactive gas supply operation S 31 and the source gas supply operation S 32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness.
- the nitride operation S 3 will be described in detail.
- the Ar gas is supplied as the exciting gas into the first plasma generation chamber 33 .
- the flow rate of the Ar gas is adjusted by using the mass flow controller 303 b , and simultaneously, the valve 303 c is opened, so as to supply the Ar gas into the first plasma generation chamber 33 .
- high frequency power is supplied from the high frequency power source 31 to the pair of first discharge electrodes 27 , so that Ar gas plasma is generated in the first plasma generation chamber 33 , and Ar is activated.
- the NH 3 gas is supplied as the first reactive gas into the first plasma generation chamber 33 .
- the flow rate of the NH 3 gas is adjusted, for example, within a range from 1 slm to 10 slm by using the mass flow controller 301 b , and simultaneously, the valve 301 c is opened, so as to supply the NH 3 gas into the first plasma generation chamber 33 .
- the NH 3 gas supplied in the first plasma generation chamber 33 collides with the activated Ar (Ar radicals), and is indirectly activated. From the first gas ejection ports 35 toward the wafers 1 , the activated NH 3 (NH 3 radicals) and the Ar radicals are ejected together, and are supplied into the process chamber 12 .
- the NH 3 radicals supplied into the process chamber 12 are brought to contact with the surfaces of the wafers 1 to undergo the surface reaction, and the NH 3 are chemically adsorbed to the surfaces of the wafers 1 .
- NH 3 gas and Ar gas which have not contributed to the adsorption to the surfaces of the wafers 1 , flow down within the process chamber 12 , and are exhausted out of the gas exhaust pipe 16 .
- the Ar gas functions as the exiting gas for indirectly activating the NH 3 , and simultaneously, functions as the carrier gas for facilitating the supplying of the NH 3 radicals into the process chamber 12 .
- the supplying of the high frequency power from the high frequency power source 31 to the pair of first discharge electrodes 27 is stopped.
- the valve 301 c is closed to stop the supplying of the NH 3 gas into the first plasma generation chamber 33 .
- the inside of the process chamber 12 is exhausted to reach, for example, 20 Pa or less.
- the valve 303 c is opened, and Ar gas is supplied as the purge gas into the process chamber 12 , so that the NH 3 gas remaining in the process chamber 12 can be effectively exhausted.
- the inside of the gas stagnant part 304 e of the source gas supply pipe 304 is filled with the DCS gas.
- the valve 304 c is opened, and the mass flow controller 304 b is used to adjust the DCS gas to have a predetermined flow rate, and simultaneously, to start supplying the DCS gas as the source gas into the gas stagnant part 304 e.
- valve 304 c is closed to confine the DCS gas under high pressure in the gas stagnant part 304 e.
- a valve of the pressure control device (not shown) is closed to temporally stop the exhausting of the inside of the process chamber 12 . Then, in the state where the valve 304 c is closed, the valve 304 d is opened, and the high pressure DCS gas filling the inside of the gas stagnant part 304 e is supplied in the pulsed manner (flush supply) into the buffer chamber 33 C (that is, into the process chamber 12 ).
- the inner pressure of the process chamber 12 is quickly increased, for example, to 931 Pa (7 Torr).
- the DCS gas supplied into the process chamber 12 is brought to contact with the surfaces of the wafers 1 , and to surface-react with the NH 3 chemically adsorbed to the surface parts of the wafers 1 , so as to form SiN films, including less than one atomic layer to several atomic layers, on the surfaces of the wafers 1 .
- NH 3 gas which has not contributed to the formation of the SiN films, flows down within the process chamber 12 , and is exhausted out of the gas exhaust pipe 16 .
- the valve 304 d is closed to stop the supplying of the DCS gas into the buffer chamber 33 C (that is, into the process chamber 12 ).
- the valve 303 e is opened to supply the Ar gas as the purge gas into the process chamber 12 , so that the DCS gas or reaction products remaining in the process chamber 12 can be efficiently exhausted.
- the first reactive gas supply operation S 31 and the source gas supply operation S 32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness.
- an active species (O 2 radicals) of oxygen gas activated by plasma is supplied on the wafers 1 to oxidize the SiN films, thus performing the oxidation operation S 4 in which silicon oxide nitride (SiON) films are formed.
- the O 2 radicals are generated at the inside of the process chamber 12 . That is, in the current embodiment, the nitride operation S 3 and the oxidation operation S 4 are continuously performed using the identical process furnace 10 , so as to prevent wafers 1 from being unloaded out of the process chamber 12 between the nitride operation S 3 and the oxidation operation S 4 .
- the oxidation operation S 4 will be described in detail.
- the O 2 gas is supplied as the second reactive gas into the second plasma generation chamber 33 B.
- the flow rate of the O 2 gas is adjusted by using the mass flow controller 302 b , and simultaneously, the valve 302 c is opened, so as to supply the O 2 gas into the second plasma generation chamber 33 B.
- high frequency power is supplied from the high frequency power source 31 B to the pair of second discharge electrodes 27 B, so that O 2 gas plasma is generated in the second plasma generation chamber 33 B, and O 2 is directly activated.
- the activated O 2 (O 2 radicals) is ejected together with the Ar gas from the second gas ejection ports 35 B to the wafers 1 , and is supplied into the process chamber 12 .
- the flow rate of the Ar gas is adjusted by using the mass flow controller 303 b , and simultaneously, the valve 303 d is opened to supply the Ar gas as the carrier gas into the second plasma generation chamber 33 B (that is, into the process chamber 12 ), so that the supplying of the O 2 radicals into the process chamber 12 can be facilitated.
- the O 2 radicals supplied into the process chamber 12 are brought to contact with the SiN films formed on the surfaces of the wafers 1 so as to form the SiON films on the wafers 1 . Thereafter, the O 2 gas or the Ar gas introduced into the process chamber 12 flows down in the process chamber 12 , and is exhausted out of the gas exhaust pipe 16 .
- the valve 302 c is closed to stop the supplying of the O 2 gas into the second plasma generation chamber 33 B. Meanwhile, after the valve 302 c is closed, the valve 303 d is opened to supply the Ar gas as the purge gas into the process chamber 12 , so that the O 2 gas remaining in the process chamber 12 can be efficiently exhausted.
- the rotation of the boat 2 is stopped to stop the rotation of the wafers 1 .
- the inner pressure of the process chamber 12 is returned to the atmospheric pressure, and simultaneously, the temperature of the wafers 1 is decreased.
- the valve 303 c is opened, and the Ar gas is supplied into the process chamber 12 , and simultaneously, the degree of the valve opening of the exhaust device is feedback controlled based on pressure information detected by the pressure sensor, so as to increase the inner pressure of the process chamber 12 to the atmospheric pressure.
- the amount of power supplied to the heater 14 is controlled, and the temperature of the wafers 1 is decreased.
- the processed wafers 1 are unloaded from the inside of the process chamber 12 , so as to end the substrate processing process according to the current embodiment.
- the first plasma generation chamber 33 and the second plasma generation chamber 33 B are installed in the process chamber 12 .
- the nitride operation S 3 and the oxidation operation S 4 can be performed using the identical process furnace 10 .
- it is unnecessary to unload the wafers 1 out of the process chamber 12 that is, without replacing wafers, a plurality of types of substrate processing operations can be performed by using one substrate processing apparatus. Accordingly, costs for processing substrates are reduced to improve productivity in processing substrates.
- the nitride operation S 3 is performed using the NH 3 gas (NH 3 radicals) that is activated by plasma.
- the oxidation operation is performed using the O 2 gas (O 2 radicals) that is activated by plasma.
- the process temperature of the wafers 1 can be decreased (for example, to a range from 300° C. to 600° C.).
- the first reactive gas supply operation S 31 and the source gas supply operation S 32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness. That is, without simultaneously supplying the DCS gas and the NH 3 gas (NH 3 radicals) activated by plasma, and without mixing of the DCS gas and the NH 3 gas, the DCS gas and the NH 3 gas are supplied into the process chamber 12 . As a result, the occurrence of a gas-phase reaction can be suppressed in the process chamber 12 , and the formation of particles in the process chamber 12 can be suppressed.
- the DCS gas and the NH 3 gas NH 3 radicals
- the activated NH 3 (NH 3 radicals) is supplied together with the Ar radicals into the process chamber 12 . Accordingly, the service life of the NH 3 radicals is extended, and the amount of the NH 3 radicals supplied to the wafers 1 is increased, so that the speed of the nitride operation can be increased.
- the high pressure DCS gas filling the inside of the gas stagnant part 304 e is supplied in the pulsed manner (flush supply) into the buffer chamber 33 C (that is, into the process chamber 12 ).
- the valve of the pressure control device (not shown) has been closed, the inner pressure of the process chamber 12 is quickly increased, for example, to 931 Pa (7 Torr). Accordingly, the supplying of the DCS to the surfaces of the wafers 1 can be performed more reliably for a short time.
- the different types of reactive gas are supplied respectively in the first plasma generation chamber 33 and the second plasma generation chamber 33 B, and plasma is generated respectively under the different conditions, and the different substrate operations (the nitride operation S 3 and the oxidation operation S 4 ) are sequentially performed.
- the present invention is not limited thereto.
- an identical type of reactive gas may be supplied into the first plasma generation chamber 33 and the second plasma generation chamber 33 B, and plasma in the first plasma generation chamber 33 and plasma in the second plasma generation chamber 33 B may be simultaneously generated under an identical condition, thereby performing a predetermined substrate operation (for example, any one of the nitride operation S 3 and the oxidation operation S 4 ). That is, the first reactive gas and the second reactive gas may be identical in type.
- the downstream end of the first reactive gas supply pipe 301 is branched into two parts, and the two parts are connected to the first plasma generation chamber 33 and the second plasma generation chamber 33 B, respectively.
- the flow rate of the Ar gas is adjusted by using the mass flow controller 303 b , and simultaneously, the valve 303 c is opened, so as to supply the Ar gas to the first plasma generation chamber 33 and the second plasma generation chamber 33 B.
- high frequency power is supplied from the high frequency power source 31 to the pair of first discharge electrodes 27 , and simultaneously, high frequency power is supplied from the high frequency power source 31 B to the pair of second discharge electrodes 27 B, thus simultaneously generating Ar gas plasma in the first plasma generation chamber 33 and the second plasma generation chamber 33 B, and activating Ar.
- NH 3 gas is adjusted to a predetermined flow rate by using the mass flow controller 301 b , and simultaneously, the valve 301 c is opened, so as to simultaneously supply the NH 3 gas into the first plasma generation chamber 33 and the second plasma generation chamber 33 B.
- the NH 3 gas supplied in the first plasma generation chamber 33 and the second plasma generation chamber 33 B collides with the activated Ar (Ar radicals), and is indirectly activated.
- the activated NH 3 (NH 3 radicals) is ejected together with the Ar radicals from the first gas ejection ports 35 and the second gas ejection ports 35 B to wafers 1 , and is supplied into the process chamber 12 .
- the NH 3 radicals supplied in the process chamber 12 are brought to contact with the surfaces of the wafers 1 to undergo surface reaction, and the NH 3 is chemically adsorbed to the surfaces of the wafers 1 .
- the supplying of the high frequency power from the high frequency power source 31 to the pair of first discharge electrodes 27 is stopped, and simultaneously, the supplying of the high frequency power from the high frequency power source 31 B to the pair of second discharge electrodes 27 B is stopped.
- the valve 301 c is closed to stop the supplying of the NH 3 gas into the first plasma generation chamber 33 and the second plasma generation chamber 33 B.
- the inside of the process chamber 12 is exhausted to reach, for example, 20 Pa or less.
- the valve 303 c is opened to supply the Ar gas as the purge gas into the process chamber 12 , so that the NH 3 gas remaining in the process chamber 12 can be efficiently exhausted.
- the first reactive gas supply operation S 31 and the source gas supply operation S 32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness.
- the supplying of the NH 3 radicals into the process chamber 12 are simultaneously performed using both the first gas ejection ports 35 and the second gas ejection ports 35 B.
- the supplying of the NH 3 radicals is performed more uniformly in the surfaces of the wafers 1 . That is, the number of gas ejection ports to the process chamber 12 increases two times, and the amount of the NH 3 radicals ejected from one gas ejection port into the process chamber 12 decreases, and simultaneously, the active species of the reactive gas is ejected from two directions in a planar direction, and thus, more accurate film forming uniformity can be obtained.
- the downstream end of the second reactive gas supply pipe 302 is branched into two parts, and the two parts are connected to the first plasma generation chamber 33 and the second plasma generation chamber 33 B, respectively.
- the present invention is not limited to a substrate processing apparatus including a vertical type process furnace according to the current embodiment, but may be suitably applicable to a substrate processing apparatus including a single substrate type process furnace, a hot wall type process furnace, or a cold wall type process furnace.
- the present invention is not limited to a case in which the NH 3 gas as the first reactive gas, the Ar gas as the exciting gas, and the DCS gas as the source gas are used to perform the nitride operation, or to a case in which the O 2 gas as the first reactive gas is used to perform the oxidation operation, and thus, the present invention may be suitably applicable even to a case in which other types of gas are used to perform other substrate processing operations.
- reactive gas supply pipes in the first plasma generation chamber 33 and the second plasma generation chamber 33 B may be spaced apart from the pair of first discharge electrodes 27 and the pair of second discharge electrodes 27 B, respectively.
- the gas exhaust pipe 16 may be installed between the first gas ejection port 35 and the second gas ejection port 35 B.
- the substrate processing process can be more uniformly performed in the surfaces of the wafers 1 , and more uniform thickness distribution or quality of a film can be achieved in the surfaces of the wafers 1 .
- the substrate processing apparatus can reduce costs for processing substrates by using plasma, so as to improve productivity in processing substrates.
- the present invention also includes the following embodiments.
- a substrate processing apparatus comprising: a process chamber configured to process a substrate; a first plasma generation chamber installed in the process chamber; a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber; a pair of first discharge electrodes configured to generate plasma in the first plasma generation chamber and to excite the first reactive gas for generating an active species of the first reactive gas; a first gas ejection port installed in a side wall of the first plasma generation chamber to eject the active species of the first reactive gas toward the substrate; a second plasma generation chamber installed in the process chamber; a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber; a pair of second discharge electrodes configured to generate plasma in the second plasma generation chamber and to excite the second reactive gas for generating an active species of the second reactive gas; and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject the active species of the second reactive gas toward the substrate.
- the substrate processing apparatus may comprise a control unit configured to control a gas supply operation performed by using the first reactive gas supply unit and the second reactive gas supply unit, and a power supply operation on the first discharge electrodes and the second discharge electrodes,
- control unit supplies the first reactive gas from the first reactive gas supply unit into the first plasma generation chamber to generate plasma in the first plasma generation chamber by using the first discharge electrodes, and to excite the first reactive gas for generating the active species of the first reactive gas, and processes the substrate by using the generated active species of the first reactive gas
- control unit supplies the second reactive gas from the second reactive gas supply unit into the second plasma generation chamber to generate plasma in the second plasma generation chamber by using the second discharge electrodes, and to excite the second reactive gas for generating the active species of the second reactive gas, and processes the substrate by using the generated active species of the second reactive gas.
- the substrate processing apparatus may comprise an exciting gas supply unit that is configured to supply exciting gas, for indirectly exciting the first reactive gas, into the first plasma generation chamber, or to supply exciting gas, for indirectly exciting the second reactive gas, into the second plasma generation chamber.
- an exciting gas supply unit configured to supply exciting gas, for indirectly exciting the first reactive gas, into the first plasma generation chamber, or to supply exciting gas, for indirectly exciting the second reactive gas, into the second plasma generation chamber.
- the substrate processing apparatus may comprise a source gas supply unit configured to supply source gas into the process chamber.
- the first discharge electrodes and the second discharge electrodes may be covered with protecting pipes.
- the substrate processing apparatus may comprise a heating unit configured to heat the substrate disposed in the process chamber.
- the substrate processing apparatus may comprise a rotation unit configured to rotate the substrate disposed in the process chamber.
- a substrate processing method comprising:
- first reactive gas is supplied from a first reactive gas supply unit into a first plasma generation chamber to generate plasma in the first plasma generation chamber by using a pair of first discharge electrodes, and to excite the first reactive gas for generating an active species of the first reactive gas, and the substrate is processed by using the generated active species of the first reactive gas;
- a second substrate processing operation in which second reactive gas is supplied from a second reactive gas supply unit into a second plasma generation chamber to generate plasma in the second plasma generation chamber by using a pair of second discharge electrodes, and to excite the second reactive gas for generating an active species of the second reactive gas, and the substrate is processed by using the generated active species of the second reactive gas;
- a substrate processing apparatus comprising:
- a process chamber configured to process a substrate
- a heating unit configured to heat the substrate
- a rotation unit configured to rotate the substrate
- a plurality of gas supply unit configured to supply reactive gas into the plasma generation chambers, respectively;
- a pair of discharge electrodes configured to generate plasma in the plasma generation chamber and to excite the reactive gas for generating an active species of the reactive gas
- gas ejection ports installed respectively in side walls of the plasma generation chambers to eject the active species of the reactive gas toward the substrate.
- the substrate processing apparatus may comprise a control unit configured to control gas supply operations performed respectively by using the gas supply units, a power supply operation on the discharge electrodes, the heating unit, and the rotation unit,
- control unit heats an inside of the process chamber to a predetermined temperature by using the heating unit, and simultaneously, rotates the substrate by using the rotation unit, and supplies the reactive gas respectively from the gas supply units into the plasma generation chambers to generate plasma by using the discharge electrodes, and to excite the reactive gas for generating the active species, and simultaneously processes the substrate by using the generated active species.
- a substrate processing method comprising:
- a substrate processing operation in which an inside of the process chamber is heated to a predetermined temperature by using the heating unit, and simultaneously, the substrate is rotated by using the rotation unit, and reactive gas is supplied respectively from the gas supply units into the plasma generation chambers to generate plasma by using the discharge electrodes, and to excite the reactive gas for generating an active species, and the substrate is simultaneously processed by using the generated active species;
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
- The present application is a Continuation of U.S. patent application Ser. No. 12/783,312, filed May 19, 2010, which claims priority under 35 U.S.C. §119 of Japanese Patent Applications No. 2009-131056, filed on May 29, 2009 and No. 2010-064651, filed on Mar. 19, 2010 in the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a substrate processing apparatus, and in particular, to a substrate processing apparatus configured to use plasma for processing a substrate.
- 2. Description of the Prior Art
- In the prior art, as one of manufacturing processes of a semiconductor device such as a dynamic random access memory (DRAM), a substrate processing process using plasma has been performed. Such a substrate processing process has been performed by using a substrate processing apparatus, which includes a process chamber configured to process a substrate, a plasma generation chamber installed in the process chamber, a gas supply unit configured to supply reactive gas into the plasma generation chamber, a discharge electrode configured to generate plasma in the plasma generation chamber and to excite the reactive gas for generating an active species, and a gas ejection port installed in a side wall of the plasma generation chamber to eject the active species of the reactive gas toward the substrate (for example, refer to Patent Document 1 below).
- Japanese Unexamined Patent Application Publication No. 2002-280378
- However, a conventional substrate processing apparatus just includes a single type plasma generation chamber and a single type discharge electrode in a process chamber. Thus, for example, to continuously perform a plurality of types of substrate processes, which are different in factors such as plasma generation condition or gas type, on an identical substrate, a plurality of substrate processing apparatuses are required according to types of substrate processes. Thus, costs for processing substrates may be increased. In addition, when two or more substrate processing apparatuses are used, a substrate carrying process may be additionally required between substrate processing processes, or a pressure adjusting process or a temperature adjusting process may be additionally required in a process chamber, and thus, productivity in processing substrates may be decreased.
- An object of the present invention is to provide a substrate processing apparatus that can reduce costs of a substrate process using plasma, so as to improve productivity in processing substrates.
- According to an aspect of the present invention, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a first plasma generation chamber and a second plasma generation chamber provided at a side of the substrate in the process chamber, each of the first plasma generation chamber and the second plasma generation chamber separated from the process chamber; a reactive gas supply unit configured to supply a reactive gas into the first plasma generation chamber and the second plasma generation chamber; a pair of first discharge electrodes configured to generate plasma and excite the reactive gas by the plasma in the first plasma generation chamber to generate an active species of the reactive gas; a pair of second discharge electrodes configured to generate plasma and excite the reactive gas by the plasma in the second plasma generation chamber to generate the active species of the reactive gas; a first gas ejection port and a second gas ejection port provided at the first plasma generation chamber and the second plasma generation chamber, respectively, each of the first gas ejection port and the second gas ejection port being configured to eject the active species of the reactive gas to the substrate in the process chamber; and a controller configured to control the reactive gas supply unit, the pair of the first discharge electrodes and the pair of the second discharge electrodes so as to perform a processing to the substrate, the processing including supplying the reactive gas into the first plasma generation chamber and the second plasma generation chamber, exciting the reactive gas by the plasma to generate the active species of the reactive gas in the first plasma generation chamber and the second plasma generation chamber, and simultaneously ejecting the active species from the first plasma generation chamber and the second plasma generation chamber to the substrate in the process chamber.
-
FIG. 1 is a plan cross-sectional view illustrating a process furnace of a substrate processing apparatus suitably used according to a first embodiment of the present invention. -
FIG. 2 is a vertical cross-sectional view taken along line II-II ofFIG. 1 . -
FIG. 3 is a vertical cross-sectional view taken along line III-Ill ofFIG. 1 . -
FIG. 4 is a schematic view illustrating a gas supply system connected to the process furnace ofFIG. 1 . - A first embodiment of the present invention will be described hereinafter.
- (1) Configuration of substrate processing apparatus
-
FIG. 1 ,FIG. 2 ,FIG. 3 , andFIG. 4 are schematic views illustrating aprocess furnace 10 of a substrate processing apparatus properly used according to the current embodiment. - (Process Chamber)
- As shown in
FIG. 1 ,FIG. 2 ,FIG. 3 , andFIG. 4 , theprocess furnace 10 of the substrate processing apparatus according to the present invention is configured as a batch type vertical hot wall type furnace. Theprocess furnace 10 includes areaction tube 11. Thereaction tube 11 is formed in a cylindrical shape with a closed upper end and an open lower end. For example, thereaction tube 11 is made of a heat resistant material such as quartz (SiO2). Thereaction tube 11 is vertically disposed and fixedly supported so that the centerline of thereaction tube 11 can be vertical. The open lower end of thereaction tube 11 forms afurnace port 13 through which wafers 1 are loaded and unloaded as substrates. - At the inside of the
reaction tube 11, aprocess chamber 12 is formed to process the wafers 1. Theprocess chamber 12 is configured to accommodate aboat 2, which will be described later, as a substrate holder. Theboat 2 includes a pair ofend plates end plates end plates holding members 5 are made of a heat-resistant material such as quartz or silicon carbide (SiC). At each of theholding members 5, a plurality ofholding grooves 6 are arranged at regular intervals in the longitudinal direction of theholding member 5 in a manner such that theholding grooves 6 of theholding members 5 are open to face each other. In a way of inserting the edge parts of wafers 1 respectively in theholding grooves 6 of theholding members 5, the wafers 1 can be held by theboat 2 in a state where the wafers 1 are horizontally oriented and vertically arranged in multiple stages with the centers of the wafers 1 being aligned with each other. - At the lower end part of the
reaction tube 11, abase 15 is installed as a holder that can air-tightly seal the open lower end of thereaction tube 11, and aseal cap 17 is installed as a furnace port cover. Thebase 15 is formed in a disk shape. For example, thebase 15 is made of a metal such as stainless steel. On the upper surface of thebase 15, aseal ring 18 is installed as a seal member contacting the lower end of thereaction tube 11. In addition, on the lower surface of thebase 15, aseal ring 18 is installed as a seal member contacting the upper end of theseal cap 17. Theseal cap 17 is installed under thebase 15. For example, theseal cap 17 is made of a metal such as stainless steel, and formed in a disk shape. Theseal cap 17 is connected to an arm of a boat elevator (not shown), and is configured to be freely moveable in the vertical direction. When theboat 2 is loaded into theprocess chamber 12, theseal cap 17 is configured to air-tightly seal the lower end of thereaction tube 11 through thebase 15 and theseal rings 18. The boat elevator (not shown) is electrically connected to acontroller 240 to be described later. - (Rotation Unit)
- Near the center of the lower side of the
seal cap 17, arotation mechanism 19 configured to rotate theboat 2 is installed. Arotation shaft 19 a of therotation mechanism 19 passes through theseal cap 17 and thebase 15, and supports aninsulating barrel 7, having a cylindrical shape, from the lower side. In addition, theinsulating barrel 7 supports the above-describedboat 2 from the lower side. By operating therotation mechanism 19, the wafers 1 can be rotated in theprocess chamber 12. In addition, for example, the insulatingbarrel 7 is made of a heat resistant material such as quartz or silicon carbide. The insulatingbarrel 7 functions as an insulating member that is configured to suppress heat transferred from aheater 14 to the lower end side of thereaction tube 11. Therotation mechanism 19 is electrically connected to thecontroller 240 to be described later. - (Heating Unit)
- At the outside of the
reaction tube 11, as a heating unit configured to entirely and uniformly heat theprocess chamber 12, theheater 14 is installed in a concentric circle shape to surround thereaction tube 11. Theheater 14 is supported by a device frame (not shown) of theprocess furnace 10, so that theheater 14 is vertically fixed. Although not shown, at the device frame of theprocess furnace 10, a temperature sensor is installed as a temperature detector. The temperature of theheater 14 is controlled based on temperature information of the temperature sensor. Theheater 14 and the temperature sensor are electrically connected to thecontroller 240 to be described later. - (Exhaust System)
- A side wall disposed on the lower side of the
reaction tube 11 is connected with agas exhaust pipe 16. At thegas exhaust pipe 16, in order from an upstream side, a pressure sensor (not shown), a pressure control device (not shown) configured as an auto pressure controller (APC) valve, and an exhaust device (not shown) configured as a vacuum pump are installed. By exhausting the inside of theprocess chamber 12 by using the exhaust device, and simultaneously, by adjusting the degree of valve opening of the pressure control device according to pressure information detected by the pressure sensor, the inside of theprocess chamber 12 can be adjusted to a predetermined pressure. The pressure sensor, the pressure control device, and the exhaust device are electrically connected to thecontroller 240 to be described later. - (First Plasma Generation Chamber and First Discharge Electrodes)
- In the reaction tube 11 (in the process chamber 12), at the space between an inner wall surface of the
reaction tube 11 and the outer circumferences of wafers 1, a firstplasma generation chamber 33 having an arc shape is installed. For example, the firstplasma generation chamber 33 is separated from theprocess chamber 12 by apartition wall 34 having a barrel shape and the inner wall surface of thereaction tube 11. In thepartition wall 34, a plurality of firstgas ejection ports 35 are vertically arrayed. The number of the firstgas ejection ports 35 corresponds to the number of wafers 1 to be processed. Height positions of the firstgas ejection ports 35 are respectively set to face the space between vertically adjacent wafers 1 held by theboat 2. - In the first
plasma generation chamber 33, a pair of protectingpipes 25 are installed. Each of the protectingpipes 25 is vertically installed to conform with the inner wall surface of thereaction tube 11. Each of the protectingpipes 25 has a bent lower end, and passes through the side surface of thereaction tube 11 and protrudes to the outside. Each of the protectingpipes 25 is configured by a dielectric. Each of the protectingpipes 25 is formed in a thin and long cylindrical pipe shape with a closed upper end and an open lower end. The inside of a hollow part of each of the protectingpipes 25 communicates with the outside (atmosphere) of theprocess chamber 12. - From the lower side,
first discharge electrodes 27 are inserted in the protectingpipes 25, respectively. Thefirst discharge electrodes 27 are made of a conductive material. Each of thefirst discharge electrodes 27 is formed in a thin and long rod shape. The lower end (exposed holding part) of each of thefirst discharge electrodes 27 is held in the protectingpipes 25 through an insulating unit (not shown) that can prevent discharging. To prevent oxidation of thefirst discharge electrodes 27 due to heating of theheater 14, a mechanism configured to purge the inside of the protectingpipes 25 with inert gas may be installed. The pair of protectingpipes 25 is not limited to the above-described shape, and thus, the upper ends of the protectingpipes 25 may be bent to pass through the upper side surface of thereaction tube 11 and protrude to the outside. In addition, thefirst discharge electrodes 27 may be inserted from the upper side into the protectingpipes 25, respectively. - The pair of
first discharge electrodes 27 are electrically connected with an output side (secondary side) of a high frequency power source 31 through amatching device 32 configured to adjust impedance. The high frequency power source 31 and thematching device 32 are electrically connected to thecontroller 240 to be described later. - A first reactive gas supply unit to be described later is configured to supply NH3 gas as first reactive gas and Ar gas as exciting gas into the first
plasma generation chamber 33. In a state where Ar gas is supplied in the firstplasma generation chamber 33, high frequency power is supplied from the high frequency power source 31 to the pair offirst discharge electrodes 27, so that plasma can be generated in the firstplasma generation chamber 33, and the Ar can be activated. Then, in this state, by supplying the NH3 gas into the firstplasma generation chamber 33, and by colliding the activated Ar (Ar radicals) with NH3, the NH3 can be indirectly activated. The activated NH3 gas (NH3 radicals) flows into theprocess chamber 12 through the firstgas ejection ports 35, and is supplied to surfaces of the wafers 1. - (Second Plasma Generation Chamber and Second Discharge Electrodes)
- In the reaction tube 11 (in the process chamber 12), at the space between the inner wall surface of the
reaction tube 11 and the outer circumferences of wafers 1, a second plasma generation chamber 33B having an arc shape is installed. In a same manner as that of the firstplasma generation chamber 33, for example, the second plasma generation chamber 33B is separated from theprocess chamber 12 by thepartition wall 34 having a barrel shape and the inner wall surface of thereaction tube 11. In the partition wall 34B, a plurality of second gas ejection ports 35B are vertically arrayed. The number of the second gas ejection ports 35B corresponds to the number of wafers 1 to be processed. Height positions of the second gas ejection ports 35B are respectively set to face the space between vertically adjacent wafers 1 held by theboat 2. - In a same manner as the inside of the first
plasma generation chamber 33, at the inside of the second plasma generation chamber 33B, a pair of protectingpipes 25B are installed. Each of the protectingpipes 25B is vertically installed to conform with the inner wall surface of thereaction tube 11. Each of the protectingpipes 25B has a bent lower end, and passes through the side surface of thereaction tube 11 and protrudes to the outside. Each of the protectingpipes 25B is configured by a dielectric. Each of the protectingpipes 25B is formed in a thin and long cylindrical pipe shape with a closed upper end and an open lower end. The inside of a hollow part of each of the protectingpipes 25B communicates with the outside (atmosphere) of theprocess chamber 12. - In a same manner as the inside of the protecting
pipes 25, from the lower side, second discharge electrodes 27B are inserted in the protectingpipes 25B, respectively. The second discharge electrodes 27B are made of a conductive material. Each of the second discharge electrodes 27B is formed in a thin and long rod shape. The lower end (exposed holding part) of each of the second discharge electrodes 27B is held in the protectingpipes 25B through an insulating unit (not shown) that can prevent discharging. To prevent oxidation of the second discharge electrodes 27B due to heating of theheater 14, a mechanism configured to purge the inside of the protectingpipes 25B with inert gas may be installed. As in the firstplasma generation chamber 33, the upper ends of the pair of protectingpipes 25B in the second plasma generation chamber 33B may be bent to pass through the upper side surface of thereaction tube 11 and protrude to the outside. In addition, the second discharge electrodes 27B may be inserted from the upper side into the protectingpipes 25B, respectively. - The pair of second discharge electrodes 27B are electrically connected with an output side (secondary side) of a high frequency power source 31B through a matching device 32B configured to adjust impedance. The high frequency power source 31B and the matching device 32B are electrically connected to the
controller 240 to be described later. - A second reactive gas supplying unit to be described later is configured to supply O2 gas as second reactive gas into the second plasma generation chamber 33B. In a state where O2 gas is supplied in the second plasma generation chamber 33B, high frequency power is supplied from the high frequency power source 31B to the pair of second discharge electrodes 27B, so that plasma can be generated in the second plasma generation chamber 33B, and the O2 gas can be activated. The activated O2 gas (O2 radicals) flows into the
process chamber 12 through the second gas ejection ports 35B, and is supplied to the surfaces of the wafers 1. - (Buffer Chamber)
- In addition, in the reaction tube 11 (in the process chamber 12), at the space between the inner wall surface of the
reaction tube 11 and the outer circumferences of wafers 1, a buffer chamber 33C having an arc shape is installed. For example, the buffer chamber 33C is separated from theprocess chamber 12 by a partition wall 34C having a barrel shape and the inner wall surface of thereaction tube 11. In the partition wall 34C, a plurality of thirdgas ejection ports 35C are arrayed to face the spaces between vertically arrayed wafers 1. The number of the thirdgas ejection ports 35C corresponds to the number of wafers 1 to be processed. Height positions of the thirdgas ejection ports 35C are respectively set to face the spaces between vertically adjacent wafers 1 held by theboat 2. - The inside of the buffer chamber 33C is provided with dichlorosilane (SiH2Cl2, referred to as DCS hereinafter) gas as source gas by using a source gas supply unit to be described later. The buffer chamber 33C functions as a gas dispersion space configured to disperse DCS gas to obtain a uniform concentration through buffering. The DCS gas supplied in the buffer chamber 33C flows into the
process chamber 12 through the thirdgas ejection ports 35C, and is supplied to the surfaces of the wafers 1. - (Gas Supply Unit)
- The lower part of the side wall of the
reaction tube 11 is connected with a first reactivegas supply pipe 301 that is configured to supply NH3 gas as the first reactive gas into the firstplasma generation chamber 33. At the first reactivegas supply pipe 301, in order from an upstream side, agas cylinder 301 a that is a supply source of NH3 gas, amass flow controller 301 b that is a flow rate controller (flow rate control unit), and avalve 301 c that is an opening and closing valve are installed. NH3 gas supplied from thegas cylinder 301 a is adjusted to a predetermined flow rate by themass flow controller 301 b, and is allowed to flow in the first reactivegas supply pipe 301 by an opening operation of thevalve 301 c, and is supplied into the firstplasma generation chamber 33. - In addition, the lower part of the side wall of the
reaction tube 11 is connected with a second reactivegas supply pipe 302 that is configured to supply O2 gas as the second reactive gas into the second plasma generation chamber 33B. At the second reactivegas supply pipe 302, in order from an upstream side, agas cylinder 302 a that is a supply source of O2 gas, a mass flow controller 302 b that is a flow rate controller (flow rate control unit), and avalve 302 c that is an opening and closing valve are installed. O2 gas supplied from thegas cylinder 302 a is adjusted to a predetermined flow rate by the mass flow controller 302 b, and is allowed to flow in the second reactivegas supply pipe 302 by an opening operation of thevalve 302 c, and is supplied into the second plasma generation chamber 33B. - In addition, the lower part of the side wall of the
reaction tube 11 is connected with a sourcegas supply pipe 304 that is configured to supply DCS gas as the source gas into the buffer chamber 33C. At the sourcegas supply pipe 304, in order from an upstream side, agas cylinder 304 a that is a supply source of DCS gas, a mass flow controller 304 b that is a flow rate controller (flow rate control unit), avalve 304 c that is an opening and closing valve, and avalve 304 d that is an opening and closing valve are installed. A gasstagnant part 304 e is configured between thevalve 304 c and thevalve 304 d. DCS gas supplied from thegas cylinder 304 a is adjusted to a predetermined flow rate by the mass flow controller 304 b, and is allowed to flow in the sourcegas supply pipe 304 by an opening operation of thevalve 304 c, and is supplied into the buffer chamber 33C. Thevalve 304 c is opened in the state where thevalve 304 d is closed, and the opening state of thevalve 304 c is held for a predetermined time, and then, when the pressure of DCS gas in the gasstagnant part 304 e reaches a predetermined pressure, thevalve 304 c is closed, and thevalve 304 d is opened, so that the DCS gas can be supplied in a pulsed manner (flush supply) into the buffer chamber 33C (into the process chamber 12). A ratio of the inner volume of the gasstagnant part 304 e to the inner volume of theprocess chamber 12, for example, may range from 1/1000 to 3/1000. When theprocess chamber 12 has an inner volume of 100 liters, the gasstagnant part 304 e may have an inner volume ranging from 100 cc to 300 cc. A path of the source gas from the gasstagnant part 304 e to theprocess chamber 12, for example, may have a flow conductance of 1.5×10−3 m3/s or greater. - A downstream side of the
valve 301 c of the first reactivegas supply pipe 301, a downstream side of thevalve 302 c of the second reactivegas supply pipe 302, and a downstream side of thevalve 304 d of the sourcegas supply pipe 304 are connected respectively through avalve 303 c, avalve 303 d, and avalve 303 e to a downstream end of an Argas supply pipe 303 configured to supply, for example, Ar gas functioning as exciting gas, purge gas, or carrier gas. That is, the Argas supply pipe 303 is branched into three parts at a downstream side. At an upstream side of the Argas supply pipe 303 with respect to the branched parts, in order from the upstream side, agas cylinder 303 a that is a supply source of the Ar gas, and a mass flow controller 303 b that is a flow rate controller (flow rate control unit) are installed. Ar gas supplied from thegas cylinder 303 a is adjusted to a predetermined flow rate by the mass flow controller 303 b, and is allowed to flow in the first reactivegas supply pipe 301 by an opening operation of thevalve 303 c, and is supplied into the firstplasma generation chamber 33. The Ar gas is also allowed to flow in the second reactivegas supply pipe 302 by an opening operation of thevalve 303 d, and is supplied into the second plasma generation chamber 33B. The Ar gas is also allowed to flow in the sourcegas supply pipe 304 by an opening operation of thevalve 303 e, and is supplied into the buffer chamber 33C. - Mainly, the first reactive gas supply unit is configured by the first reactive
gas supply pipe 301, thegas cylinder 301 a, themass flow controller 301 b, thevalve 301 c, the Argas supply pipe 303, thegas cylinder 303 a, the mass flow controller 303 b, and thevalve 303 c. In addition, mainly, a second reactive gas supply unit is configured by the second reactivegas supply pipe 302, thegas cylinder 302 a, the mass flow controller 302 b, thevalve 302 c, the Argas supply pipe 303, thegas cylinder 303 a, the mass flow controller 303 b, and thevalve 303 d. In addition, mainly, a source gas supply unit is configured by the sourcegas supply pipe 304, thegas cylinder 304 a, the mass flow controller 304 b, thevalve 304 c, thevalve 304 d, the Argas supply pipe 303, thegas cylinder 303 a, the mass flow controller 303 b, and thevalve 303 e. - In addition, an exciting gas supply unit is configured by the Ar
gas supply pipe 303, thegas cylinder 303 a, the mass flow controller 303 b, and thevalves - The
mass flow controllers 301 b, 302 b, 303 b, and 304 b, and thevalves controller 240 to be described later. - (Control Unit)
- As described above, the
controller 240 as a control unit is respectively and electrically connected to therotation mechanism 19, the boat elevator (not shown), theheater 14, the temperature sensor (not shown), the pressure sensor (not shown), the pressure control device (not shown), the exhaust device (not shown), the high frequency power sources 31 and 31B, thematching devices 32 and 32B, themass flow controllers 301 b, 302 b, 303 b, and 304 b, and thevalves - In detail, the
controller 240 controls therotation shaft 19 a of therotation mechanism 19 to rotate at a predetermined time. Thecontroller 240 controls the boat elevator to move upward and downward at a predetermined time. In addition, thecontroller 240 adjusts the degree of valve opening of the pressure control device based on pressure information detected by the pressure sensor, and controls the inside of theprocess chamber 12 to reach a predetermined pressure at a predetermined time. In addition, thecontroller 240 adjusts power supplied to theheater 14 based on temperature information detected by the temperature sensor, and controls the inside of theprocess chamber 12 to achieve a predetermined temperature distribution at a predetermined time, thus controlling wafers 1 disposed in theprocess chamber 12 to reach a predetermined temperature. In addition, thecontroller 240 controls the high frequency power source 31 and 31B and thematching devices 32 and 32B, so that plasma can be generated at a predetermined time in the firstplasma generation chamber 33 and the second plasma generation chamber 33B. In addition, thecontroller 240 controls themass flow controllers 301 b, 302 b, 303 b, and 304 b for flow rates, and simultaneously, controls the opening and closing of thevalves plasma generation chamber 33, into the second plasma generation chamber 33B, and into the buffer chamber 33C. - The
controller 240 according to the current embodiment is configured to continuously perform: a first substrate processing operation in which the first reactive gas is supplied into the firstplasma generation chamber 33 from a first gas supply system, and plasma is generated in the firstplasma generation chamber 33 by using thefirst discharge electrodes 27, so as to directly or indirectly excite the first reactive gas for generating an active species of the first reactive gas, and wafers 1 are processed by using the generated active species of the first reactive gas; and a second substrate processing operation in which the second reactive gas is supplied into the second plasma generation chamber 33B from a second gas supply system, and plasma is generated in the second plasma generation chamber 33B by using the second discharge electrodes 27B, so as to directly or indirectly excite the second reactive gas for generating an active species of the second reactive gas, and wafers 1 are processed by using the generated active species of the second reactive gas. - (2) Substrate Processing Process
- Next, by using the
process furnace 10 according to the above-described configuration, as one of processes of manufacturing a semiconductor device, a process of continuously performing both a nitride operation in which a surface of a wafer 1 is nitrided to form a silicon nitride (SiN) film, and an oxidation operation in which the wafer 1 provided with the SiN film is oxidized to form a silicon oxide nitride (SiON) film, for example, a substrate processing process in which a gate insulating film of a metal oxide semiconductor (MOS) type field effect transistor is formed will now be described. In the following description, operations respectively of parts constituting the substrate processing apparatus are controlled by thecontroller 240. - (Loading Operation S1)
- First, the
boat 2 is charged with a plurality of wafers 1 (wafer charging). Next, based on a control of thecontroller 240, the boat elevator is driven to move theboat 2 upward. Accordingly, as shown inFIG. 1 ,FIG. 2 , andFIG. 3 , theboat 2 holding the plurality of wafers 1 is loaded into the process chamber 12 (boat loading). At this time, theseal cap 17 closes the lower end of thereaction tube 11 through thebase 15 and the seal rings 18. Accordingly, theprocess chamber 12 is air-tightly sealed. - In addition, when the
boat 2 is loaded, Ar gas as purge gas is brought to flow into theprocess chamber 12. In detail, the flow rate of the Ar gas is adjusted by the mass flow controller 303 b, and simultaneously, thevalve 303 c is opened, so as to introduce the Ar gas into theprocess chamber 12. Accordingly, when carrying of theboat 2 is performed, the invasion of particles into theprocess chamber 12 can be suppressed. - (Pressure Adjusting Operation and Temperature Increasing Operation S2)
- When the loading of the
boat 2 into theprocess chamber 12 is completed, the inner atmosphere of theprocess chamber 12 is exhausted such that the inside of theprocess chamber 12 reaches a predetermined pressure (for example, 10 Pa to 100 Pa). In detail, while the inner atmosphere of theprocess chamber 12 is exhausted by the exhaust device, the degree of the valve opening of the pressure control device is feedback controlled based on pressure information detected by the pressure sensor, and the inside of theprocess chamber 12 reaches a predetermined pressure. In addition, theheater 14 heats the inside of theprocess chamber 12 to a predetermined temperature. In detail, power supplied to theheater 14 is controlled based on temperature information detected by the temperature sensor, the inside of theprocess chamber 12 reaches at a predetermined temperature (for example, 300° C. to 600° C.). In addition, therotation mechanism 19 is operated to start the rotation of the wafers 1 loaded in theprocess chamber 12. The rotation of the wafers 1 is continually performed until a nitride operation S3 and an oxidation operation S4, which will be described later, are finished. - (Nitride Operation S3)
- In the nitride operation S3, according to an atomic layer deposition (ALD) method that is one of chemical vapor deposition methods, the DCS gas and the NH3 gas are used to form the silicon nitride (SiN) films on the surfaces of the wafers 1. The ALD method is a method in which two or more types of processing gas are alternately supplied one by one onto wafers 1 under predetermined film forming conditions (temperature, time, etc.), and surface reactions of the processing gas on the wafers 1 are used to form thin films including less than one atomic layer to several atomic layers. In the ALD method, a film thickness can be controlled by controlling the number of cycles for supplying processing gas. For example, if the film forming rate is 1 Å/cycle and it is intended to form a 20-Å film, the process may be repeated 20 cycles.
- In the nitride operation S3, first, an active species (NH3 radicals) generated by indirectly exciting the NH3 gas as the first reactive gas in the first
plasma generation chamber 33 is supplied into theprocess chamber 12, and is brought to surface-react (chemical adsorption) with surface parts of the wafers 1 (first reactive gas supply operation S31). Thereafter, the DCS gas is supplied from the buffer chamber 33C to the inside of theprocess chamber 12, and is brought to surface-react (chemical adsorption) with NH3 chemically adsorbed to the surfaces of the wafers 1, so as to form SiN films including less than one atomic layer to several atomic layers (source gas supply operation S32). The first reactive gas supply operation S31 and the source gas supply operation S32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness. Hereinafter, the nitride operation S3 will be described in detail. - (First Reactive Gas Supply Operation S31)
- First, the Ar gas is supplied as the exciting gas into the first
plasma generation chamber 33. In detail, the flow rate of the Ar gas is adjusted by using the mass flow controller 303 b, and simultaneously, thevalve 303 c is opened, so as to supply the Ar gas into the firstplasma generation chamber 33. Then, high frequency power is supplied from the high frequency power source 31 to the pair offirst discharge electrodes 27, so that Ar gas plasma is generated in the firstplasma generation chamber 33, and Ar is activated. - Next, the NH3 gas is supplied as the first reactive gas into the first
plasma generation chamber 33. In detail, the flow rate of the NH3 gas is adjusted, for example, within a range from 1 slm to 10 slm by using themass flow controller 301 b, and simultaneously, thevalve 301 c is opened, so as to supply the NH3 gas into the firstplasma generation chamber 33. The NH3 gas supplied in the firstplasma generation chamber 33 collides with the activated Ar (Ar radicals), and is indirectly activated. From the firstgas ejection ports 35 toward the wafers 1, the activated NH3 (NH3 radicals) and the Ar radicals are ejected together, and are supplied into theprocess chamber 12. - The NH3 radicals supplied into the
process chamber 12 are brought to contact with the surfaces of the wafers 1 to undergo the surface reaction, and the NH3 are chemically adsorbed to the surfaces of the wafers 1. NH3 gas and Ar gas, which have not contributed to the adsorption to the surfaces of the wafers 1, flow down within theprocess chamber 12, and are exhausted out of thegas exhaust pipe 16. As such, the Ar gas functions as the exiting gas for indirectly activating the NH3, and simultaneously, functions as the carrier gas for facilitating the supplying of the NH3 radicals into theprocess chamber 12. - After a predetermined time (for example, 2 seconds to 120 seconds) is elapsed, the supplying of the high frequency power from the high frequency power source 31 to the pair of
first discharge electrodes 27 is stopped. In addition, thevalve 301 c is closed to stop the supplying of the NH3 gas into the firstplasma generation chamber 33. In addition, the inside of theprocess chamber 12 is exhausted to reach, for example, 20 Pa or less. Meanwhile, after thevalve 301 c is closed, thevalve 303 c is opened, and Ar gas is supplied as the purge gas into theprocess chamber 12, so that the NH3 gas remaining in theprocess chamber 12 can be effectively exhausted. - (Source Gas Supply Operation S32)
- Together with the performing of the first reactive gas supply operation S31, the inside of the gas
stagnant part 304 e of the sourcegas supply pipe 304 is filled with the DCS gas. In detail, first, in the state where thevalve 304 d is closed, thevalve 304 c is opened, and the mass flow controller 304 b is used to adjust the DCS gas to have a predetermined flow rate, and simultaneously, to start supplying the DCS gas as the source gas into the gasstagnant part 304 e. - Then, after a predetermined time (for example, 2 seconds to 4 seconds) is elapsed, when the inner pressure of the gas
stagnant part 304 e reaches a predetermined pressure (for example, 20000 Pa), thevalve 304 c is closed to confine the DCS gas under high pressure in the gasstagnant part 304 e. - When the inside of the
process chamber 12 reaches a predetermined pressure (for example, 20 pa), and the inside of the gasstagnant part 304 e reaches a predetermined pressure (for example, 20000 Pa), a valve of the pressure control device (not shown) is closed to temporally stop the exhausting of the inside of theprocess chamber 12. Then, in the state where thevalve 304 c is closed, thevalve 304 d is opened, and the high pressure DCS gas filling the inside of the gasstagnant part 304 e is supplied in the pulsed manner (flush supply) into the buffer chamber 33C (that is, into the process chamber 12). At this time, since the valve of the pressure control device (not shown) has been closed, the inner pressure of theprocess chamber 12 is quickly increased, for example, to 931 Pa (7 Torr). The DCS gas supplied into theprocess chamber 12 is brought to contact with the surfaces of the wafers 1, and to surface-react with the NH3 chemically adsorbed to the surface parts of the wafers 1, so as to form SiN films, including less than one atomic layer to several atomic layers, on the surfaces of the wafers 1. NH3 gas, which has not contributed to the formation of the SiN films, flows down within theprocess chamber 12, and is exhausted out of thegas exhaust pipe 16. - After a predetermined time (for example, 2 seconds to 4 seconds) is elapsed, the
valve 304 d is closed to stop the supplying of the DCS gas into the buffer chamber 33C (that is, into the process chamber 12). In addition, after thevalve 304 d is closed, thevalve 303 e is opened to supply the Ar gas as the purge gas into theprocess chamber 12, so that the DCS gas or reaction products remaining in theprocess chamber 12 can be efficiently exhausted. - Thereafter, the first reactive gas supply operation S31 and the source gas supply operation S32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness.
- (Oxidation Operation S4)
- After forming the SiN films having a desired thickness through the nitride operation S3, an active species (O2 radicals) of oxygen gas activated by plasma is supplied on the wafers 1 to oxidize the SiN films, thus performing the oxidation operation S4 in which silicon oxide nitride (SiON) films are formed.
- In addition, in the current embodiment, at the inside of the
process chamber 12, in the second plasma generation chamber 33B installed independently from the firstplasma generation chamber 33, the O2 radicals are generated. That is, in the current embodiment, the nitride operation S3 and the oxidation operation S4 are continuously performed using theidentical process furnace 10, so as to prevent wafers 1 from being unloaded out of theprocess chamber 12 between the nitride operation S3 and the oxidation operation S4. Hereinafter, the oxidation operation S4 will be described in detail. - First, the O2 gas is supplied as the second reactive gas into the second plasma generation chamber 33B. In detail, the flow rate of the O2 gas is adjusted by using the mass flow controller 302 b, and simultaneously, the
valve 302 c is opened, so as to supply the O2 gas into the second plasma generation chamber 33B. Then, high frequency power is supplied from the high frequency power source 31B to the pair of second discharge electrodes 27B, so that O2 gas plasma is generated in the second plasma generation chamber 33B, and O2 is directly activated. The activated O2 (O2 radicals) is ejected together with the Ar gas from the second gas ejection ports 35B to the wafers 1, and is supplied into theprocess chamber 12. Meanwhile, the flow rate of the Ar gas is adjusted by using the mass flow controller 303 b, and simultaneously, thevalve 303 d is opened to supply the Ar gas as the carrier gas into the second plasma generation chamber 33B (that is, into the process chamber 12), so that the supplying of the O2 radicals into theprocess chamber 12 can be facilitated. - The O2 radicals supplied into the
process chamber 12 are brought to contact with the SiN films formed on the surfaces of the wafers 1 so as to form the SiON films on the wafers 1. Thereafter, the O2 gas or the Ar gas introduced into theprocess chamber 12 flows down in theprocess chamber 12, and is exhausted out of thegas exhaust pipe 16. - After a predetermined time is elapsed, the
valve 302 c is closed to stop the supplying of the O2 gas into the second plasma generation chamber 33B. Meanwhile, after thevalve 302 c is closed, thevalve 303 d is opened to supply the Ar gas as the purge gas into theprocess chamber 12, so that the O2 gas remaining in theprocess chamber 12 can be efficiently exhausted. - (Atmospheric Pressure Return Operation and Temperature Decreasing Operation S5)
- When the oxidation operation S4 is completed, the rotation of the
boat 2 is stopped to stop the rotation of the wafers 1. Then, the inner pressure of theprocess chamber 12 is returned to the atmospheric pressure, and simultaneously, the temperature of the wafers 1 is decreased. In detail, thevalve 303 c is opened, and the Ar gas is supplied into theprocess chamber 12, and simultaneously, the degree of the valve opening of the exhaust device is feedback controlled based on pressure information detected by the pressure sensor, so as to increase the inner pressure of theprocess chamber 12 to the atmospheric pressure. In addition, the amount of power supplied to theheater 14 is controlled, and the temperature of the wafers 1 is decreased. - (Unloading Operation S6)
- Thereafter, in the reverse sequence to that of the above-described loading operation, the processed wafers 1 are unloaded from the inside of the
process chamber 12, so as to end the substrate processing process according to the current embodiment. - (3) Effects Relevant to the Current Embodiment
- According to the current embodiment, one or more effects are attained as follows.
- (a) According to the current embodiment, the first
plasma generation chamber 33 and the second plasma generation chamber 33B are installed in theprocess chamber 12. Thus, the nitride operation S3 and the oxidation operation S4 can be performed using theidentical process furnace 10. In addition, between the nitride operation S3 and the oxidation operation S4, it is unnecessary to unload the wafers 1 out of theprocess chamber 12. That is, without replacing wafers, a plurality of types of substrate processing operations can be performed by using one substrate processing apparatus. Accordingly, costs for processing substrates are reduced to improve productivity in processing substrates. - (b) In the nitride operation S3 according to the current embodiment, the nitride operation is performed using the NH3 gas (NH3 radicals) that is activated by plasma. In addition, in the oxidation operation S4 according to the current embodiment, the oxidation operation is performed using the O2 gas (O2 radicals) that is activated by plasma. As such, since a substrate processing operation such as the nitride operation or the oxidation operation is performed using the active species activated by plasma, the process temperature of the wafers 1 can be decreased (for example, to a range from 300° C. to 600° C.).
- (c) In the nitride operation S3 according to the current embodiment, the first reactive gas supply operation S31 and the source gas supply operation S32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness. That is, without simultaneously supplying the DCS gas and the NH3 gas (NH3 radicals) activated by plasma, and without mixing of the DCS gas and the NH3 gas, the DCS gas and the NH3 gas are supplied into the
process chamber 12. As a result, the occurrence of a gas-phase reaction can be suppressed in theprocess chamber 12, and the formation of particles in theprocess chamber 12 can be suppressed. - (d) In the first reactive gas supply operation S31 according to the current embodiment, the activated NH3 (NH3 radicals) is supplied together with the Ar radicals into the
process chamber 12. Accordingly, the service life of the NH3 radicals is extended, and the amount of the NH3 radicals supplied to the wafers 1 is increased, so that the speed of the nitride operation can be increased. - (e) In the source gas supply operation S32 according to the current embodiment, the high pressure DCS gas filling the inside of the gas
stagnant part 304 e is supplied in the pulsed manner (flush supply) into the buffer chamber 33C (that is, into the process chamber 12). In addition, at this time, since the valve of the pressure control device (not shown) has been closed, the inner pressure of theprocess chamber 12 is quickly increased, for example, to 931 Pa (7 Torr). Accordingly, the supplying of the DCS to the surfaces of the wafers 1 can be performed more reliably for a short time. - In the above-described embodiment, the different types of reactive gas are supplied respectively in the first
plasma generation chamber 33 and the second plasma generation chamber 33B, and plasma is generated respectively under the different conditions, and the different substrate operations (the nitride operation S3 and the oxidation operation S4) are sequentially performed. However, the present invention is not limited thereto. For example, an identical type of reactive gas may be supplied into the firstplasma generation chamber 33 and the second plasma generation chamber 33B, and plasma in the firstplasma generation chamber 33 and plasma in the second plasma generation chamber 33B may be simultaneously generated under an identical condition, thereby performing a predetermined substrate operation (for example, any one of the nitride operation S3 and the oxidation operation S4). That is, the first reactive gas and the second reactive gas may be identical in type. - For example, when both the first
plasma generation chamber 33 and the second plasma generation chamber 33B are used to perform the nitride operation S3, the downstream end of the first reactivegas supply pipe 301 is branched into two parts, and the two parts are connected to the firstplasma generation chamber 33 and the second plasma generation chamber 33B, respectively. - In addition, in the first reactive gas supply operation S31, the flow rate of the Ar gas is adjusted by using the mass flow controller 303 b, and simultaneously, the
valve 303 c is opened, so as to supply the Ar gas to the firstplasma generation chamber 33 and the second plasma generation chamber 33B. In addition, high frequency power is supplied from the high frequency power source 31 to the pair offirst discharge electrodes 27, and simultaneously, high frequency power is supplied from the high frequency power source 31B to the pair of second discharge electrodes 27B, thus simultaneously generating Ar gas plasma in the firstplasma generation chamber 33 and the second plasma generation chamber 33B, and activating Ar. - Next, NH3 gas is adjusted to a predetermined flow rate by using the
mass flow controller 301 b, and simultaneously, thevalve 301 c is opened, so as to simultaneously supply the NH3 gas into the firstplasma generation chamber 33 and the second plasma generation chamber 33B. The NH3 gas supplied in the firstplasma generation chamber 33 and the second plasma generation chamber 33B collides with the activated Ar (Ar radicals), and is indirectly activated. The activated NH3 (NH3 radicals) is ejected together with the Ar radicals from the firstgas ejection ports 35 and the second gas ejection ports 35B to wafers 1, and is supplied into theprocess chamber 12. The NH3 radicals supplied in theprocess chamber 12 are brought to contact with the surfaces of the wafers 1 to undergo surface reaction, and the NH3 is chemically adsorbed to the surfaces of the wafers 1. - After a predetermined time is elapsed, the supplying of the high frequency power from the high frequency power source 31 to the pair of
first discharge electrodes 27 is stopped, and simultaneously, the supplying of the high frequency power from the high frequency power source 31B to the pair of second discharge electrodes 27B is stopped. In addition, thevalve 301 c is closed to stop the supplying of the NH3 gas into the firstplasma generation chamber 33 and the second plasma generation chamber 33B. In addition, the inside of theprocess chamber 12 is exhausted to reach, for example, 20 Pa or less. Meanwhile, after thevalve 301 c is closed, thevalve 303 c is opened to supply the Ar gas as the purge gas into theprocess chamber 12, so that the NH3 gas remaining in theprocess chamber 12 can be efficiently exhausted. - Thereafter, the first reactive gas supply operation S31 and the source gas supply operation S32 are set as one cycle, and the cycle is repeated predetermined times to form SiN films having a desired thickness.
- According to the current embodiment, the supplying of the NH3 radicals into the
process chamber 12 are simultaneously performed using both the firstgas ejection ports 35 and the second gas ejection ports 35B. Thus, compared to a case in which one type of gas ejection ports is used, the supplying of the NH3 radicals is performed more uniformly in the surfaces of the wafers 1. That is, the number of gas ejection ports to theprocess chamber 12 increases two times, and the amount of the NH3 radicals ejected from one gas ejection port into theprocess chamber 12 decreases, and simultaneously, the active species of the reactive gas is ejected from two directions in a planar direction, and thus, more accurate film forming uniformity can be obtained. In addition, since the chemical adsorption of the NH3 to the surfaces of the wafers 1 is performed more uniformly in the surfaces of the wafers 1, more uniform thickness distribution or quality of the SiN film can be achieved in the surfaces of the wafers 1. - Even when the first
plasma generation chamber 33 and the second plasma generation chamber 33B are used to perform the oxidation operation S4, the above-described effects can be attained. In this case, the downstream end of the second reactivegas supply pipe 302 is branched into two parts, and the two parts are connected to the firstplasma generation chamber 33 and the second plasma generation chamber 33B, respectively. - While the embodiments of the present invention have been particularly described, various changes in form and details may be made without departing from the spirit and scope of the present invention.
- For example, the present invention is not limited to a substrate processing apparatus including a vertical type process furnace according to the current embodiment, but may be suitably applicable to a substrate processing apparatus including a single substrate type process furnace, a hot wall type process furnace, or a cold wall type process furnace. In addition, the present invention is not limited to a case in which the NH3 gas as the first reactive gas, the Ar gas as the exciting gas, and the DCS gas as the source gas are used to perform the nitride operation, or to a case in which the O2 gas as the first reactive gas is used to perform the oxidation operation, and thus, the present invention may be suitably applicable even to a case in which other types of gas are used to perform other substrate processing operations.
- In addition, for example, reactive gas supply pipes in the first
plasma generation chamber 33 and the second plasma generation chamber 33B may be spaced apart from the pair offirst discharge electrodes 27 and the pair of second discharge electrodes 27B, respectively. In addition, thegas exhaust pipe 16 may be installed between the firstgas ejection port 35 and the second gas ejection port 35B. In a case where a plurality of gas injection ports are installed, when the distances respectively between thegas exhaust pipe 16 and at least two of the gas injection ports may be substantially identical, the substrate processing process can be more uniformly performed in the surfaces of the wafers 1, and more uniform thickness distribution or quality of a film can be achieved in the surfaces of the wafers 1. - The substrate processing apparatus according to the present invention can reduce costs for processing substrates by using plasma, so as to improve productivity in processing substrates.
- The present invention also includes the following embodiments.
- (Supplementary Note 1)
- According to a preferred embodiment of the present invention, there is provided a substrate processing apparatus comprising: a process chamber configured to process a substrate; a first plasma generation chamber installed in the process chamber; a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber; a pair of first discharge electrodes configured to generate plasma in the first plasma generation chamber and to excite the first reactive gas for generating an active species of the first reactive gas; a first gas ejection port installed in a side wall of the first plasma generation chamber to eject the active species of the first reactive gas toward the substrate; a second plasma generation chamber installed in the process chamber; a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber; a pair of second discharge electrodes configured to generate plasma in the second plasma generation chamber and to excite the second reactive gas for generating an active species of the second reactive gas; and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject the active species of the second reactive gas toward the substrate.
- (Supplementary Note 2)
- Preferably, the substrate processing apparatus may comprise a control unit configured to control a gas supply operation performed by using the first reactive gas supply unit and the second reactive gas supply unit, and a power supply operation on the first discharge electrodes and the second discharge electrodes,
- wherein the control unit supplies the first reactive gas from the first reactive gas supply unit into the first plasma generation chamber to generate plasma in the first plasma generation chamber by using the first discharge electrodes, and to excite the first reactive gas for generating the active species of the first reactive gas, and processes the substrate by using the generated active species of the first reactive gas, and then,
the control unit supplies the second reactive gas from the second reactive gas supply unit into the second plasma generation chamber to generate plasma in the second plasma generation chamber by using the second discharge electrodes, and to excite the second reactive gas for generating the active species of the second reactive gas, and processes the substrate by using the generated active species of the second reactive gas. - (Supplementary Note 3)
- Preferably, the substrate processing apparatus may comprise an exciting gas supply unit that is configured to supply exciting gas, for indirectly exciting the first reactive gas, into the first plasma generation chamber, or to supply exciting gas, for indirectly exciting the second reactive gas, into the second plasma generation chamber.
- (Supplementary Note 4)
- Preferably, the substrate processing apparatus may comprise a source gas supply unit configured to supply source gas into the process chamber.
- (Supplementary Note 5)
- Preferably, the first discharge electrodes and the second discharge electrodes may be covered with protecting pipes.
- (Supplementary Note 6)
- Preferably, the substrate processing apparatus may comprise a heating unit configured to heat the substrate disposed in the process chamber.
- (Supplementary Note 7)
- Preferably, the substrate processing apparatus may comprise a rotation unit configured to rotate the substrate disposed in the process chamber.
- (Supplementary Note 8)
- According to another preferred embodiment of the present invention, there is provided a substrate processing method comprising:
- a loading operation of loading a substrate into a process chamber;
- a first substrate processing operation in which first reactive gas is supplied from a first reactive gas supply unit into a first plasma generation chamber to generate plasma in the first plasma generation chamber by using a pair of first discharge electrodes, and to excite the first reactive gas for generating an active species of the first reactive gas, and the substrate is processed by using the generated active species of the first reactive gas;
- a second substrate processing operation in which second reactive gas is supplied from a second reactive gas supply unit into a second plasma generation chamber to generate plasma in the second plasma generation chamber by using a pair of second discharge electrodes, and to excite the second reactive gas for generating an active species of the second reactive gas, and the substrate is processed by using the generated active species of the second reactive gas; and
- an unloading operation in which the processed substrate is unloaded out of the process chamber.
- (Supplementary Note 9)
- According to another preferred embodiment of the present invention, there is provided a substrate processing apparatus comprising:
- a process chamber configured to process a substrate;
- a heating unit configured to heat the substrate;
- a rotation unit configured to rotate the substrate;
- a plurality of plasma generation chambers installed in the process chamber;
- a plurality of gas supply unit configured to supply reactive gas into the plasma generation chambers, respectively;
- a pair of discharge electrodes configured to generate plasma in the plasma generation chamber and to excite the reactive gas for generating an active species of the reactive gas; and
- gas ejection ports installed respectively in side walls of the plasma generation chambers to eject the active species of the reactive gas toward the substrate.
- (Supplementary Note 10)
- Preferably, the substrate processing apparatus may comprise a control unit configured to control gas supply operations performed respectively by using the gas supply units, a power supply operation on the discharge electrodes, the heating unit, and the rotation unit,
- wherein the control unit heats an inside of the process chamber to a predetermined temperature by using the heating unit, and simultaneously, rotates the substrate by using the rotation unit, and supplies the reactive gas respectively from the gas supply units into the plasma generation chambers to generate plasma by using the discharge electrodes, and to excite the reactive gas for generating the active species, and simultaneously processes the substrate by using the generated active species.
- (Supplementary Note 11)
- According to another preferred embodiment of the present invention, there is provided a substrate processing method comprising:
- a loading operation in which a substrate is loaded into the process chamber;
- a substrate processing operation in which an inside of the process chamber is heated to a predetermined temperature by using the heating unit, and simultaneously, the substrate is rotated by using the rotation unit, and reactive gas is supplied respectively from the gas supply units into the plasma generation chambers to generate plasma by using the discharge electrodes, and to excite the reactive gas for generating an active species, and the substrate is simultaneously processed by using the generated active species; and
- an unloading operation in which the processed substrate is unloaded out of the process chamber.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/592,090 US20150140839A1 (en) | 2009-05-29 | 2015-01-08 | Substrate processing apparatus |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-131056 | 2009-05-29 | ||
JP2009131056 | 2009-05-29 | ||
JP2010-064651 | 2010-03-19 | ||
JP2010064651A JP5490585B2 (en) | 2009-05-29 | 2010-03-19 | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
US12/783,312 US9209015B2 (en) | 2009-05-29 | 2010-05-19 | Substrate processing apparatus |
US14/592,090 US20150140839A1 (en) | 2009-05-29 | 2015-01-08 | Substrate processing apparatus |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/783,312 Continuation US9209015B2 (en) | 2009-05-29 | 2010-05-19 | Substrate processing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150140839A1 true US20150140839A1 (en) | 2015-05-21 |
Family
ID=43218759
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/783,312 Active 2030-10-24 US9209015B2 (en) | 2009-05-29 | 2010-05-19 | Substrate processing apparatus |
US14/592,090 Abandoned US20150140839A1 (en) | 2009-05-29 | 2015-01-08 | Substrate processing apparatus |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/783,312 Active 2030-10-24 US9209015B2 (en) | 2009-05-29 | 2010-05-19 | Substrate processing apparatus |
Country Status (4)
Country | Link |
---|---|
US (2) | US9209015B2 (en) |
JP (1) | JP5490585B2 (en) |
KR (1) | KR101113112B1 (en) |
TW (1) | TWI408748B (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8129288B2 (en) * | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
TWI520177B (en) * | 2010-10-26 | 2016-02-01 | Hitachi Int Electric Inc | Substrate processing apparatus , semiconductor device manufacturing method and computer-readable recording medium |
JP6022166B2 (en) * | 2011-02-28 | 2016-11-09 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
JP6088178B2 (en) | 2011-10-07 | 2017-03-01 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and program |
US20130089934A1 (en) * | 2011-10-07 | 2013-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Material Delivery System and Method |
JP6125247B2 (en) * | 2012-03-21 | 2017-05-10 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program |
US9208671B2 (en) * | 2013-12-05 | 2015-12-08 | Honeywell International Inc. | Redundant input pipe networks in aspirated smoke detectors |
JP2016134569A (en) * | 2015-01-21 | 2016-07-25 | 株式会社東芝 | Semiconductor manufacturing equipment |
JP6486154B2 (en) * | 2015-03-12 | 2019-03-20 | 東京エレクトロン株式会社 | Substrate holder and substrate processing apparatus using the same |
US9842931B1 (en) * | 2016-06-09 | 2017-12-12 | International Business Machines Corporation | Self-aligned shallow trench isolation and doping for vertical fin transistors |
JP6456893B2 (en) * | 2016-09-26 | 2019-01-23 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, recording medium, and substrate processing apparatus |
JP6820816B2 (en) * | 2017-09-26 | 2021-01-27 | 株式会社Kokusai Electric | Substrate processing equipment, reaction tubes, semiconductor equipment manufacturing methods, and programs |
JP6753983B2 (en) * | 2018-08-20 | 2020-09-09 | Sppテクノロジーズ株式会社 | Plasma processing equipment |
WO2020165964A1 (en) * | 2019-02-13 | 2020-08-20 | 東芝三菱電機産業システム株式会社 | Activated-gas generation device |
KR102139296B1 (en) * | 2019-05-02 | 2020-07-30 | 주식회사 유진테크 | Batch type substrate processing apparatus |
KR102194604B1 (en) * | 2019-05-02 | 2020-12-24 | 주식회사 유진테크 | Batch type substrate processing apparatus |
JP6937806B2 (en) * | 2019-09-25 | 2021-09-22 | 株式会社Kokusai Electric | Substrate processing equipment and semiconductor manufacturing method |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030164143A1 (en) * | 2002-01-10 | 2003-09-04 | Hitachi Kokusai Electric Inc. | Batch-type remote plasma processing apparatus |
US20040071897A1 (en) * | 2002-10-11 | 2004-04-15 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US20040187784A1 (en) * | 2003-03-28 | 2004-09-30 | Fluens Corporation | Continuous flow deposition system |
US20050118837A1 (en) * | 2002-07-19 | 2005-06-02 | Todd Michael A. | Method to form ultra high quality silicon-containing compound layers |
WO2006093136A1 (en) * | 2005-03-01 | 2006-09-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
US20070010071A1 (en) * | 2005-07-06 | 2007-01-11 | Hiroyuki Matsuura | Method and apparatus for forming silicon oxynitride film |
US20080193643A1 (en) * | 2007-02-12 | 2008-08-14 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20090170345A1 (en) * | 2007-12-26 | 2009-07-02 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and substrate processing apparatus |
US20090191717A1 (en) * | 2008-01-24 | 2009-07-30 | Ki-Hyun Kim | Atomic layer deposition apparatus |
US20100186898A1 (en) * | 2009-01-23 | 2010-07-29 | Tokyo Electron Limited | Plasma processing apparatus |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0950992A (en) * | 1995-08-04 | 1997-02-18 | Sharp Corp | Film forming device |
JP2000054145A (en) * | 1998-08-04 | 2000-02-22 | Komatsu Ltd | Surface treating device |
JP3979849B2 (en) | 2001-01-11 | 2007-09-19 | 株式会社日立国際電気 | Plasma processing apparatus and semiconductor device manufacturing method |
KR100387926B1 (en) * | 2001-05-24 | 2003-06-18 | (주)넥소 | Plasma etching apparatus |
JP3649697B2 (en) * | 2001-11-14 | 2005-05-18 | 三菱重工業株式会社 | Barrier metal film manufacturing apparatus and barrier metal film manufacturing method |
KR100829327B1 (en) * | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus and reaction tube |
JP2006190770A (en) * | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | Substrate processor |
JP4228150B2 (en) * | 2005-03-23 | 2009-02-25 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
JP4529855B2 (en) * | 2005-09-26 | 2010-08-25 | 日新電機株式会社 | Silicon object forming method and apparatus |
KR100655445B1 (en) * | 2005-10-04 | 2006-12-08 | 삼성전자주식회사 | Apparatus and method for treating plasma, and facility for manufacturing semiconductor devices |
JP4983063B2 (en) * | 2006-03-28 | 2012-07-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
JPWO2007111348A1 (en) * | 2006-03-28 | 2009-08-13 | 株式会社日立国際電気 | Substrate processing equipment |
JP4929932B2 (en) * | 2006-09-01 | 2012-05-09 | 東京エレクトロン株式会社 | Film forming method, film forming apparatus, and storage medium |
JP5291875B2 (en) * | 2006-11-01 | 2013-09-18 | 富士フイルム株式会社 | Plasma device |
TWI440405B (en) * | 2007-10-22 | 2014-06-01 | New Power Plasma Co Ltd | Capacitively coupled plasma reactor |
-
2010
- 2010-03-19 JP JP2010064651A patent/JP5490585B2/en active Active
- 2010-05-10 KR KR1020100043567A patent/KR101113112B1/en active IP Right Grant
- 2010-05-19 US US12/783,312 patent/US9209015B2/en active Active
- 2010-05-27 TW TW099116934A patent/TWI408748B/en active
-
2015
- 2015-01-08 US US14/592,090 patent/US20150140839A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030164143A1 (en) * | 2002-01-10 | 2003-09-04 | Hitachi Kokusai Electric Inc. | Batch-type remote plasma processing apparatus |
US20050118837A1 (en) * | 2002-07-19 | 2005-06-02 | Todd Michael A. | Method to form ultra high quality silicon-containing compound layers |
US20040071897A1 (en) * | 2002-10-11 | 2004-04-15 | Applied Materials, Inc. | Activated species generator for rapid cycle deposition processes |
US20040187784A1 (en) * | 2003-03-28 | 2004-09-30 | Fluens Corporation | Continuous flow deposition system |
US20080286980A1 (en) * | 2005-03-01 | 2008-11-20 | Hitachi Kokusai Electric Inc. | Substrate Processing Apparatus and Semiconductor Device Producing Method |
WO2006093136A1 (en) * | 2005-03-01 | 2006-09-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
US20070010071A1 (en) * | 2005-07-06 | 2007-01-11 | Hiroyuki Matsuura | Method and apparatus for forming silicon oxynitride film |
US20080193643A1 (en) * | 2007-02-12 | 2008-08-14 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20090170345A1 (en) * | 2007-12-26 | 2009-07-02 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and substrate processing apparatus |
US8609551B2 (en) * | 2007-12-26 | 2013-12-17 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and substrate processing apparatus |
US8895455B2 (en) * | 2007-12-26 | 2014-11-25 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and substrate processing apparatus |
US20090191717A1 (en) * | 2008-01-24 | 2009-07-30 | Ki-Hyun Kim | Atomic layer deposition apparatus |
US20100186898A1 (en) * | 2009-01-23 | 2010-07-29 | Tokyo Electron Limited | Plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
KR101113112B1 (en) | 2012-02-17 |
KR20100129147A (en) | 2010-12-08 |
JP2011009699A (en) | 2011-01-13 |
US9209015B2 (en) | 2015-12-08 |
US20100300357A1 (en) | 2010-12-02 |
TW201110233A (en) | 2011-03-16 |
JP5490585B2 (en) | 2014-05-14 |
TWI408748B (en) | 2013-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9209015B2 (en) | Substrate processing apparatus | |
US9206931B2 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
US8202809B2 (en) | Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus | |
US9508555B2 (en) | Method of manufacturing semiconductor device | |
US8047158B2 (en) | Substrate processing apparatus and reaction container | |
US9508546B2 (en) | Method of manufacturing semiconductor device | |
US9970110B2 (en) | Plasma processing apparatus | |
JP6016542B2 (en) | Reaction tube, substrate processing apparatus, and semiconductor device manufacturing method | |
US8394200B2 (en) | Vertical plasma processing apparatus for semiconductor process | |
US11069512B2 (en) | Film forming apparatus and gas injection member used therefor | |
JP2006188729A (en) | Substrate treatment apparatus | |
KR20090084737A (en) | Film formation method and apparatus for semiconductor process, and computer readable medium | |
JP2014082463A (en) | Substrate processing device, lid and semiconductor device manufacturing method | |
KR20200121771A (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
JP7315607B2 (en) | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method | |
WO2020090161A1 (en) | Semiconductor device manufacturing method, substrate processing device, and program | |
JP2013135126A (en) | Manufacturing method of semiconductor device, substrate processing method, and substrate processing apparatus | |
WO2020246309A1 (en) | Substrate processing method and substrate processing device | |
JP5824544B2 (en) | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method | |
WO2020066800A1 (en) | Method for manufacturing semiconductor device, substrate processing apparatus, and program | |
JP4716737B2 (en) | Substrate processing equipment | |
CN112740373A (en) | Substrate processing apparatus | |
JP2001196364A (en) | Method and device for heat treatment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KOKUSAI ELECTRIC CORPORATION, JAPAN Free format text: CHANGE OF NAME;ASSIGNOR:HITACHI KOKUSAI ELECTRIC INC.;REEL/FRAME:047353/0513 Effective date: 20180601 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |