US20150070085A1 - Reduction in on-resistance in pass device - Google Patents
Reduction in on-resistance in pass device Download PDFInfo
- Publication number
- US20150070085A1 US20150070085A1 US14/028,735 US201314028735A US2015070085A1 US 20150070085 A1 US20150070085 A1 US 20150070085A1 US 201314028735 A US201314028735 A US 201314028735A US 2015070085 A1 US2015070085 A1 US 2015070085A1
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- voltage
- negative
- gate
- circuit
- bias
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Definitions
- the bias of the gate of the pass device is controlled by a level shift circuit 11 , which connects Vss to the gate until the input resistance becomes too high, and then is switched to Vneg to bias the gate of the pass device by command of Dswitch. This switch to Vneg increases Vgs and reduces the input resistance of the pass device for lower input voltages, Vsupply.
- the negative voltage, Vneg, that is connected to the level shift circuit 11 is created by negative voltage circuits represented by negative charge pump circuits or a negative one x multiplier circuit ( ⁇ 1x circuit).
- the level shift circuit is powered from Vsupply to allow the pass transistor to be turned off. In order to turn the device off, the gate must be at the higher of the drain/source voltages; i.e. the source in this case which is also the bulk connection.
- FIG. 2 is a pass gate circuit that uses a negative voltage to increase the Vgs of the pass gate 20 and thereby reduce input resistance allowing a larger range of load currents.
- the input, Vsupply is high
- the output, Vload is high yielding a voltage divider feedback from R 1 and R 2 to the negative input to the amplifier 21 to be high, which in turn sets the gate bias of the pass device 20 to be negative.
- the output is switched to Vss to provide a low resistance path to Vss, for instance the ⁇ 1x multiplier circuit shown in FIG. 4 and the switch state shown in TABLE 1.
- the charge pump is enabled the switched capacitor inverts the supply voltage, Vsupply, to the negative output voltage.
Abstract
Description
- The present disclosure is related to on-resistance of a transistor device, in particular the internal on-resistance of a pass device.
- A pass device is used to transmit a voltage, or signal, from one portion of a circuit to another and much of the time a wide range of signal voltage is in play. To compensate for increasing internal resistance of the pass device bias and circuit techniques need to be deployed. Further any internal resistance in the pass device needs to be compensated for, and therefore a means to reduce the resistance that a signal sees flowing through the pass device needs to be reduced to the lowest level possible.
- US 2012/0268094 A1 (Scalaferri et al.) is directed to circuits and methods for dynamic adjustment of the current limit of a power management unit to avoid automatic interruption of power flow. US 2008/0094037 A1 (Enjalbert et al.) is directed to a number of measures to avoid excessive power dissipation by a pass device in a charging system. In U.S. Pat. No. 8,018,200 B2 (Enjalbert et al.) a number of measures are directed to avoiding excessive power dissipation in a charging system by a pass device. U.S. Pat. No. 7,102,415 B1 (Potanin) is directed to a current trip point detection circuit for change in current through a pass transistor to a load. U.S. Pat. No. 5,821,697 (Weber) is directed to instant levels of power flow between a light source and a battery dynamically controlled.
- A first technical paper: A. K. Ong, V. I. Prodanov, M. Tarsia; “A Method for Reducing the Variation in “On” Resistance of a MOS Sampling Switch; Bell Laboratories, Lucent Technologies; IEEE International Symposium on Circuits and Systems , May 28-31, 2000, Geneva, Switzerland. A second technical paper: G. A. Rincon-Mora and P. E. Allen, “A low drop out Quiesant Current, Low Drop-Out Regulator”, IEEE Journal of Solid State Circuits, Vol 33, No. 1, January 1998. Boosting Technique:
- It is an objective of the present disclosure to reduce the on-resistance of a pass device while operating over a wide range of input voltages and while using a high-voltage MOS device with a reduced on-resistance and a increased threshold voltage.
- It is further an objective of the present disclosure to increase the Vgs voltage by using a voltage negative of the Vss rail.
- It is also further an objective of the present disclosure to produce the voltage negative of the Vss rail by using a negative charge pump.
- It is still an objective of the present disclosure to detect when the voltage negative of the Vss rail is operational.
- The pass device of the present disclosure is a common gate configuration where the gate is connected to Vss (0V), the source is connected to the pass gate input (Vsupply) and the drain is connect to the pass gate load producing Vload. It is an objective to produce a Vload that is as close to Vsupply as possible. To accomplish this, the internal resistance of the pass gate needs to be as low as possible. As the input voltage to the pass gate is reduced, the input resistance of the pass gate increases as Vgs decreases. To counter the increase in input resistance at low input voltage, the gate to source voltage (Vgs) of the pass device is increased by changing the gate bias to be a negative voltage below Vss.
- A gate bias circuit comprising the capability to switch between Vss and an output of a negative charge pump is coupled to the gate of the PMOS pass device. The gate bias circuit provides the capability to operate at a gate bias of Vss (0V), or switch to a gate bias that is negative with respect to Vss. Whereas, several circuits which include negative charge pumps, a −1x multiplier circuit provides a circuit that provides Vss and when directed a voltage bias that is more negative than Vss. The gate bias circuit defaults to Vss when a negative bias is not called for.
- This invention will be described with reference to the accompanying drawings, wherein:
-
FIG. 1 is a circuit diagram of the present disclosure using a level shift to control the gate bias of the pass gate; -
FIG. 2 is a circuit diagram of a pass gate circuit that uses a negative voltage to increase the Vgs of the pass gate of the present disclosure; -
FIG. 3A is a block diagram of a negative charge pump circuit of the present disclosure; -
FIG. 3B is a voltage diagram of the negative charge pump circuit of the present disclosure; -
FIG. 4 is a circuit diagram of a single stage switched capacitor circuit capable of producing a negative voltage bias of the present disclosure; and -
FIG. 5 is a circuit diagram of the present disclosure of a detector circuit for sensing when the negative bias is operational. - In
FIG. 1 is shown a circuit diagram of apass device 10 of the present disclosure in which Vsupply is being switched to the output, Vload. The bias of the gate voltage of the pass device is normally Vss (0V), but as the input, Vsupply, is reduced in amplitude, the internal resistance of the pass device increases. At some point the increase in internal resistance becomes a problem reducing the efficiency of the pass device to deliver to the output a load voltage that is a close approximation of Vsupply. - The bias of the gate of the pass device is controlled by a
level shift circuit 11, which connects Vss to the gate until the input resistance becomes too high, and then is switched to Vneg to bias the gate of the pass device by command of Dswitch. This switch to Vneg increases Vgs and reduces the input resistance of the pass device for lower input voltages, Vsupply. The negative voltage, Vneg, that is connected to thelevel shift circuit 11 is created by negative voltage circuits represented by negative charge pump circuits or a negative one x multiplier circuit (−1x circuit). The level shift circuit is powered from Vsupply to allow the pass transistor to be turned off. In order to turn the device off, the gate must be at the higher of the drain/source voltages; i.e. the source in this case which is also the bulk connection. - In
FIG. 2 is a pass gate circuit that uses a negative voltage to increase the Vgs of thepass gate 20 and thereby reduce input resistance allowing a larger range of load currents. When the input, Vsupply, is high, the output, Vload, is high yielding a voltage divider feedback from R1 and R2 to the negative input to theamplifier 21 to be high, which in turn sets the gate bias of thepass device 20 to be negative. -
FIG. 2 is an example of a linear regulator using the concept of the higher gate drive from the −1x multiplier. Regulation is achieved from theamplifier 21 in a feedback configuration where the output of the divider circuit (R1/R2) is controlled to be equal to the reference voltage, Vref. The Vref voltage is typically from a bandgap voltage and is stable and fixed over temperature range and supply voltage variations. By allowing the controllingamplifier 21 the capability of a negative output voltage, the on-resistance of the pass device can be lowered thereby allowing either an increase in the output current drive or allowing a smaller pass device to be used. - In
FIG. 3A is shown a block diagram of anegative charge pump 30 of the present disclosure. Thenegative charge pump 30 is connected between Vsupply and Vss (0V) with a clock, an enable input and a Vneg output. The enable signal turns on the negative charge pump and the clock input provides the switching.FIG. 3B shows the timing of waveforms. Both Vss and Vsupply are constant voltages, and when the enable signal occurs, Vneg is started. The output Vneg is a direct multiple of Vsupply, for instance an inversion of −1x, or the output is a regulated negative voltage controlled by a feedback loop. - When the negative charge pump is turned off, the output is switched to Vss to provide a low resistance path to Vss, for instance the −1x multiplier circuit shown in
FIG. 4 and the switch state shown in TABLE 1. When the charge pump is enabled the switched capacitor inverts the supply voltage, Vsupply, to the negative output voltage. -
TABLE 1 Enable = 1 Enable = 1 Switch Enable = 0 Clock = 0 Clock = 0 S1 Closed Closed Open S2 Open Open Closed S3 Closed Closed Open S4 Closed Open Closed - In order to detect that the output in
FIG. 3A is operating as the negative voltage, Vneg, a sense circuit shown inFIG. 5 is used in which a gate of an N channel device is connected to Vss. When Vneg is more negative than Vgs theN channel device 50 conducts the bias current, Ibias. Node A is pulled low and the output of theSchmitt trigger 51 goes high, which can be used to indicate that the Vneg bias is being applied to the gate of the pass device. - While the invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention.
Claims (14)
Applications Claiming Priority (3)
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EP13368030.6A EP2846211A1 (en) | 2013-09-10 | 2013-09-10 | Reduction in on-resistance in pass device |
EP13368030 | 2013-09-10 | ||
EP13368030.6 | 2013-09-10 |
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US20150070085A1 true US20150070085A1 (en) | 2015-03-12 |
US8981840B1 US8981840B1 (en) | 2015-03-17 |
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US14/028,735 Active US8981840B1 (en) | 2013-09-10 | 2013-09-17 | Reduction in on-resistance in pass device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US9502969B2 (en) * | 2015-01-19 | 2016-11-22 | Powerchip Technology Corporation | Negative reference voltage generating circuit |
US10135333B1 (en) * | 2013-10-04 | 2018-11-20 | Silego Technology, Inc. | Enhanced conduction for p-channel device |
CN110858711A (en) * | 2018-08-22 | 2020-03-03 | 三星电子株式会社 | Circuit and method for overvoltage protection in a universal serial bus interface |
Families Citing this family (2)
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US11223345B2 (en) | 2020-06-04 | 2022-01-11 | Stmicroelectronics International N.V. | Low power input receiver using a Schmitt trigger circuit |
US20230261573A1 (en) * | 2022-02-15 | 2023-08-17 | Apple Inc. | Power Converter With Overdrive Switch Control |
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US8416012B2 (en) * | 2010-01-22 | 2013-04-09 | Ricoh Company, Ltd. | Reference voltage generating circuit and analog circuit using the same |
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US5821697A (en) | 1995-02-13 | 1998-10-13 | Conceptra Patent Trust | Constant intensity electronic flashlight and lantern method and apparatus |
JP3718106B2 (en) * | 2000-05-22 | 2005-11-16 | 松下電器産業株式会社 | Semiconductor integrated circuit |
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EP1856784B1 (en) | 2005-02-22 | 2020-02-12 | NXP USA, Inc. | Control apparatus and method of regulating power |
JP4805699B2 (en) * | 2006-03-14 | 2011-11-02 | 株式会社リコー | Semiconductor device |
US7626360B2 (en) * | 2006-08-11 | 2009-12-01 | Cirrus Logic, Inc. | Charge-pump biased battery protection circuit |
JP5104377B2 (en) * | 2008-02-15 | 2012-12-19 | セイコーエプソン株式会社 | Voltage stabilizer |
EP2515422B1 (en) | 2011-04-22 | 2017-09-27 | Dialog Semiconductor GmbH | Analog current limit adjustment for linear and switching regulators |
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2013
- 2013-09-10 EP EP13368030.6A patent/EP2846211A1/en active Pending
- 2013-09-17 US US14/028,735 patent/US8981840B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US7242565B2 (en) * | 2003-11-21 | 2007-07-10 | Texas Instruments Incorporated | Thermal shut-down circuit |
US20060017494A1 (en) * | 2004-07-26 | 2006-01-26 | Masashi Horiguchi | Semiconductor integrated circuit device |
US20070064513A1 (en) * | 2005-09-13 | 2007-03-22 | Elpida Memory, Inc. | Semiconductor apparatus |
US8089305B2 (en) * | 2006-12-26 | 2012-01-03 | Elpida Memory, Inc. | Power supply voltage reset circuit and reset signal generating method |
US8416012B2 (en) * | 2010-01-22 | 2013-04-09 | Ricoh Company, Ltd. | Reference voltage generating circuit and analog circuit using the same |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US10135333B1 (en) * | 2013-10-04 | 2018-11-20 | Silego Technology, Inc. | Enhanced conduction for p-channel device |
US9502969B2 (en) * | 2015-01-19 | 2016-11-22 | Powerchip Technology Corporation | Negative reference voltage generating circuit |
CN110858711A (en) * | 2018-08-22 | 2020-03-03 | 三星电子株式会社 | Circuit and method for overvoltage protection in a universal serial bus interface |
US20220224107A1 (en) * | 2018-08-22 | 2022-07-14 | Samsung Electronics Co., Ltd. | Circuit for and method of protecting overvoltage in universal serial bus interface |
US11862964B2 (en) * | 2018-08-22 | 2024-01-02 | Samsung Electronics Co., Ltd. | Circuit for and method of protecting overvoltage in universal serial bus interface |
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EP2846211A1 (en) | 2015-03-11 |
US8981840B1 (en) | 2015-03-17 |
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