US20150056379A1 - Method of manufacturing gold thin film by using electroless-plating method - Google Patents
Method of manufacturing gold thin film by using electroless-plating method Download PDFInfo
- Publication number
- US20150056379A1 US20150056379A1 US14/467,035 US201414467035A US2015056379A1 US 20150056379 A1 US20150056379 A1 US 20150056379A1 US 201414467035 A US201414467035 A US 201414467035A US 2015056379 A1 US2015056379 A1 US 2015056379A1
- Authority
- US
- United States
- Prior art keywords
- thin film
- alcohol
- minutes
- reaction mixture
- sers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
Definitions
- the present invention relates to a method of manufacturing a gold (Au) thin film on a dielectric surface, and more particularly, to a method of manufacturing an Au thin film on a glass surface, which has increased activity of surface enhanced Raman scattering (SERS) by using an electroless-plating method.
- Au gold
- SERS surface enhanced Raman scattering
- a gold (Au) thin film is manufactured by using one of three methods, i.e., an electroplating or electro-deposition method, a vapor deposition method, and an electroless-plating method.
- the vapor deposition method has a few intrinsic weaknesses. In various application fields, elaborate and high vacuum equipment is required, and a large amount of Au metal is consumed during an evaporation process. In addition, it is difficult to attach evaporated Au only to a selected area in a plated surface. In other words, it is not easy to design a pattern having Au by using the vapor deposition method.
- SERS surface enhanced Raman scattering
- a technology using such SERS is applied to various molecular electronics, for example, to a chemical analyte, an etching agent, a lubricant, a catalyst, and a sensor.
- KR1277357 provides a layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, provides a pretreatment technique wherein an ultrafine wiring can be formed and a thin seed layer of uniform film thickness can be formed, and discloses a substrate including a thin seed layer formed with a uniform film thickness via electroless plating by using the pretreatment technique.
- the present invention provides a method of manufacturing a gold (Au) thin film conveniently and stably having an effect of surface enhancement Raman scattering (SERS) activity by using an electroless-plating method, without having to not only use expensive equipment but also perform an additional process.
- Au gold
- SERS surface enhancement Raman scattering
- a method of manufacturing a gold (Au) thin film by using an electroless-plating method including: manufacturing a reaction mixture by adding an Au chloride compound and an alkaline compound to an alcohol-water mixed solution; and forming an Au thin film by putting a substrate in the reaction mixture and stirring the reaction mixture.
- the alcohol-water mixed solution may be a mixed solution containing 70 to 90 wt % of alcohol and 30 to 10 wt % of water.
- the alcohol may be C1 to C4 alcohol, and in detail, may be methanol or ethanol.
- the Au chloride compound may be selected from the group consisting of potassium Au chloride (KAuCl 4 ), gold potassium cyanide (KAu(CN) 2 ), and chloroauric acid (HAuCl 4 ).
- the alkaline compound may be selected from the group consisting of potassium carbonate, sodium hydroxide, potassium hydroxide, butylamine, and sodium hydrogen carbonate.
- the substrate may be formed of a dielectric material selected from the group consisting of glass, plastic, and silicon.
- FIG. 1 is field emission scanning electron microscopic (FE-SEM) images of gold (Au) thin films deposited on glass substrates according to reaction times of 20 minutes, 40 minutes, 60 minutes, and 80 minutes, respectively;
- FE-SEM field emission scanning electron microscopic
- FIG. 2 illustrates ultraviolet-visible (UV-vis) absorption spectra of the Au thin films deposited on the glass substrates according to the reaction times of 20 minutes, 40 minutes, 60 minutes, and 80 minutes;
- UV-vis ultraviolet-visible
- FIG. 3 ( a ) illustrates X-ray diffraction (XRD) patterns of the Au thin films deposited on the glass substrates according to the reaction times of 40 minutes and 80 minutes
- FIG. 3 ( b ) illustrates an X-ray photoelectron spectroscopy (XPS) spectrum of the Au thin film deposited on the glass substrate according to the reaction time of 80 minutes;
- XRD X-ray diffraction
- XPS X-ray photoelectron spectroscopy
- FIG. 4 ( a ) illustrates surface enhancement Raman scattering (SERS) spectra of benzenthiol (BT) adsorbed on the Au thin film deposited on the glass substrates
- FIG. 4 ( b ) illustrates relative Raman peak intensities of BT at 1574 cm ⁇ 1 adsorbed on the Au thin films deposited on the glass substrates;
- FIG. 5 illustrates SERS spectra of BT at 1574 cm ⁇ 1 adsorbed on five different batches A through E of an Au film.
- a reaction mixture is manufactured by adding an Au chloride compound and an alkaline compound to an alcohol-water mixed solution.
- alcohol is a reducing agent that supplies electrons.
- the reaction mixture After putting the substrate into the reaction mixture, the reaction mixture is stirred to form an Au thin film.
- the alcohol-water mixed solution may contain 70 to 90 wt % of alcohol and 30 to 10 wt % of water.
- the alcohol may be C1 to C4 alcohol, and in detail, may be methanol or ethanol.
- the Au chloride compound may be selected from the group consisting of potassium Au chloride (KAuCl 4 ), gold potassium cyanide (KAu(CN) 2 ), and chloroauric acid (HAuCl 4 ), and the alkaline compound may be selected from the group consisting of potassium carbonate, sodium hydroxide, potassium hydroxide, butylamine, and sodium hydrogen carbonate.
- the substrate may be formed of a dielectric material selected from the group consisting of glass, plastic, and silicon.
- the Au chloride compound and the alkaline compound are put into the water-alcohol mixed solution that is methanol or ethanol and a temperature is maintained to 50° C. to 70° C.
- Au nanoparticles adhere to any one of various dielectric surfaces, such as glass, silicon, and plastic surfaces, and sizes of the Au nanoparticles or a thickness of the Au thin film may be adjusted by varying the concentrations of reactants or by adjusting a reaction time.
- a state of the Au thin film adhered on the dielectric surface as such was analyzed by using an ultraviolet-visible (UV-vis) spectrum analyzer, a field emission scanning electron microscope, an X-ray diffraction (XRD) analyzer, and an X-ray photoelectron spectroscopy (XPS) analyzer, and as results, it was determined that the Au thin film adhered on the dielectric surface was formed as Au particles having nanometer sizes gather together, and sizes of the Au particles and a thickness of the Au thin film depend on a reaction time.
- UV-vis ultraviolet-visible
- XRD X-ray diffraction
- XPS X-ray photoelectron spectroscopy
- the Au thin film manufactured by using the electroless-plating method showed uniform surface enhancement Raman scattering (SERS) activity on a surface up to hundreds of thousands of square micrometers, and an enhancement factor (EF) calculated by using benzenthiol (BT) as a prototype adsorbent reached up to 7.6 ⁇ 10 4 .
- SERS surface enhancement Raman scattering
- EF enhancement factor
- the cover glass was washed with ethanol and then was finally dried in an oven at a temperature of 60° C. for 30 minutes.
- the washed cover glass was dipped in a reaction mixture and then the reaction mixture was vigorously stirred at a temperature of 50° C.
- the reaction time was varied from 20 minutes to 80 minutes.
- the reaction mixture was obtained by mixing an aqueous solution containing 0.5 mL of 0.1 M HAuCl 4 and 1 mL of 1 M K 2 CO 3 with 8.5 mL of methanol solution, and at this time, the pH of the reaction mixture was adjusted to 11 to 12.
- An Au-coated glass obtained as such was washed with ethanol and then dried in air.
- the Au-coated glass was immersed in a 10 mM methanol solution of BT for 30 minutes, washed with deionized water several times, and then dried in air.
- UV-vis spectra were obtained by using a spectrum analyzer (Avantes 3648), and field emission scanning electron microscopic (FE-SEM) images were obtained by using a field emission scanning electron microscope (JSM-6700F) that operated at 5.0 kV.
- XRD was analyzed by using an X-ray diffractometer (Rigaku Model MiniFlex powder diffractometer) using Cu K ⁇ radiation. Also, XPS measurements were performed by using an AXISH model using Mg K ⁇ X-ray as a light source.
- SERS was analyzed by using a spectroscope (Renishaw Raman System Model 2000) equipped with an integral microscope (Olympus BH2-UMA). The 632.8 nm line from a 17 mW He/Ne laser (Spectra Physics Model 127) was used as an excitation source. A Raman band of a silicon wafer at 520 cm ⁇ 1 was used to calibrate the spectroscope. Accuracy of a measured spectrum value was at least 1 cm ⁇ 1 .
- Atomic force microscopic (AFM) images were obtained by using an atomic force microscope (Instruments Nanoscope IIIa system), and at this time a nominal spring constant was from 20 N/m to 100 N/m, and an 125 ⁇ m long etched cantilever was used. Topographic images were recorded in a tapping mode under an operating frequency within 300 kHz at a scanning speed of 2 Hz.
- FIG. 1 is FE-SEM images of Au thin films deposited on glass substrates according to reaction times, for example, 20 minutes, 40 minutes, 60 minutes, and 80 minutes, respectively.
- An average particle size of the Au thin film according to the reaction time of 20 minutes is 22.8 ⁇ 3.8 nm
- an average particle size of the Au thin film according to the reaction time of 40 minutes is 176 ⁇ 18 nm
- Au nanoparticles coalesce into large grains to form a network structure and cover an entire surface of the glass substrate. Meanwhile, it is difficult to determine grain sizes of the Au thin films according to the reaction times of 60 minutes and 80 minutes.
- FIG. 2 illustrates UV-vis absorption spectra of the Au thin films deposited on the glass substrates according to the reaction times, for example, 20 minutes, 40 minutes, 60 minutes, and 80 minutes.
- the Au thin film according to the reaction time of 20 minutes shows maximum absorption at 534 nm
- the Au thin films according to the reaction times of 40 minutes, 60 minutes and 80 minutes show maximum absorption at 563 nm, 584 nm, and 639 nm, respectively.
- FIG. 3 ( a ) illustrates XRD patterns of the Au thin films deposited on the glass substrates, wherein XRD peaks positioned at 38.2°, 44.4°, 64.6°, and 77.6° respectively correspond to (111), (200), (220), and (311) lattice planes of face centered cubic gold particles.
- FIG. 3 ( b ) illustrates an XPS spectrum of the Au thin film deposited on the glass substrate according to the reaction time of 80 minutes, wherein XRD peaks at 83.7 eV and 87.4 eV respectively correspond to 4 f 7/2 and 4 f 5/2 peaks of zero-valent Au.
- FIG. 4 ( a ) illustrates SERS spectra of BT adsorbed on the Au thin films deposited on the glass substrates, wherein bands at 998 cm ⁇ 1 , 1021 cm ⁇ 1 , 1072 cm ⁇ 1 , and 1573 cm ⁇ 1 respectively correspond to an in-plane ring-breathing mode, an in-plane C-H bending mode, an in-plane ring-breathing mode coupled with a C-S stretching mode, and a C-C stretching mode,
- FIG. 4 ( b ) illustrates relative Raman peak intensities of BT at 1574 cm ⁇ 1 adsorbed on the Au thin films deposited on the glass substrates, wherein the Au thin film according to the reaction time of 60 minutes shows the most intense SERS peak of BT, whereas the Au thin films according to the reaction times of 20 minutes and 80 minutes show very weak SERS peaks.
- Such results highlight the importance of gaps and crevices in a metal nanostructure in SERS measurements.
- an SERS EF may be calculated according to Equation 1 below.
- I SERS and I NR respectively denote SERS intensity of BT on an Au thin film and normal Raman (NR) scattering intensity of BT in a bulk.
- N NR and N SERS denote numbers obtained by illuminating BT molecules by using a laser beam to respectively obtain SERS and NR spectra.
- N SERS and I NR were measured at 1574 cm ⁇ 1 , and N NR and N SERS were calculated based on estimated concentration of surface BT species, density of bulk BT, and sampling areas. It was assumed that equilibrated surface concentration of BT is the same as that of Au and silver (Ag), i.e., up to 7.1 ⁇ 10 ⁇ 10 .
- N SERS was calculated to be 1.0 ⁇ 10 ⁇ 17 mol considering a sampling area having a diameter of 1 ⁇ m and a surface roughness factor (up to 1.47) obtained from AFM measurement of the thin film according to the reaction time of 60 minutes. When an NR spectrum of pure BT was measured, a sampling volume was a product of a laser spot and a penetration depth was about 15 ⁇ m. N NR was 1.1 ⁇ 10 13 mol when density of BT was 1.07 g/cm 3 .
- FIG. 5 illustrates SERS spectra of BT at 1574 cm ⁇ 1 adsorbed on five different batches A through E of the Au film according to the reaction time of 60 minutes. Peak intensities at 1574 cm ⁇ 1 were normalized with respect to silicon wafers, and batch-to-batch relative deviation was 15% whereas spot-to-spot relative deviation was 12%.
- an Au thin film manufactured by using an electroless-plating method shows uniform SERS activity on an area up to hundreds of thousands of square micrometers, and an EF calculated by using BT as a prototype adsorbent reached up to 7.6 ⁇ 10 4 .
- an Au thin film having an effect of SERS activity may be conveniently and stably formed on a dielectric surface.
- an Au thin film having an SERS effect may be conveniently and stably formed on a dielectric surface without having to use expensive additional equipment, such as a vacuum device.
- the Au thin film since a thickness of an Au thin film formed on a dielectric substrate, such as glass, may be adjusted, the Au thin film may be applied to various fields, such as semiconductor fields, energy fields, catalyst fields, medical fields, and diagnosis fields.
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Inorganic Chemistry (AREA)
Abstract
Provided is a method of manufacturing a gold (Au) thin film on a dielectric surface by using an electroless-plating method, the method including: manufacturing a reaction mixture by adding an Au chloride compound and an alkaline compound to an alcohol-water mixed solution; and forming an Au thin film by putting a substrate in the reaction mixture and stirring the reaction mixture. Accordingly, compounds that are relatively low toxic may be used as raw materials, and an Au thin film having a surface enhancement Raman scattering (SERS) effect may be conveniently and stably formed on a dielectric surface without having to use expensive additional equipment, such as a vacuum device.
Description
- This application claims the benefit of Korean Patent Application No. 10-2013-0100496, filed on Aug. 23, 2014, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- 1. Field of the Invention
- The present invention relates to a method of manufacturing a gold (Au) thin film on a dielectric surface, and more particularly, to a method of manufacturing an Au thin film on a glass surface, which has increased activity of surface enhanced Raman scattering (SERS) by using an electroless-plating method.
- 2. Description of the Related Art
- Generally, a gold (Au) thin film is manufactured by using one of three methods, i.e., an electroplating or electro-deposition method, a vapor deposition method, and an electroless-plating method.
- In the electro-deposition method, elaborate and expensive equipment is required to guarantee deposition at an accurate ratio and a suitable electric potential. Moreover, in the electro-deposition method, an electric contact should be performed on a plating surface. In addition, not only a long time is taken for such an electric contact if an integrated circuit (IC) having a very complex circuit pattern, specially a certain high density, is used. Furthermore, a surface that is plated should be conductive, and should be connected to an external power source.
- Also, even the vapor deposition method has a few intrinsic weaknesses. In various application fields, elaborate and high vacuum equipment is required, and a large amount of Au metal is consumed during an evaporation process. In addition, it is difficult to attach evaporated Au only to a selected area in a plated surface. In other words, it is not easy to design a pattern having Au by using the vapor deposition method.
- Effects of surface enhanced Raman scattering (SERS) may increase according to changes in a surface or structure of a metal. In detail, according to recent studies, SERS may be detected even in a single molecule. A technology using such SERS is applied to various molecular electronics, for example, to a chemical analyte, an etching agent, a lubricant, a catalyst, and a sensor.
- Meanwhile, KR1277357 provides a layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, provides a pretreatment technique wherein an ultrafine wiring can be formed and a thin seed layer of uniform film thickness can be formed, and discloses a substrate including a thin seed layer formed with a uniform film thickness via electroless plating by using the pretreatment technique.
- The present invention provides a method of manufacturing a gold (Au) thin film conveniently and stably having an effect of surface enhancement Raman scattering (SERS) activity by using an electroless-plating method, without having to not only use expensive equipment but also perform an additional process.
- According to an aspect of the present invention, there is provided a method of manufacturing a gold (Au) thin film by using an electroless-plating method, the method including: manufacturing a reaction mixture by adding an Au chloride compound and an alkaline compound to an alcohol-water mixed solution; and forming an Au thin film by putting a substrate in the reaction mixture and stirring the reaction mixture.
- The alcohol-water mixed solution may be a mixed solution containing 70 to 90 wt % of alcohol and 30 to 10 wt % of water.
- The alcohol may be C1 to C4 alcohol, and in detail, may be methanol or ethanol.
- The Au chloride compound may be selected from the group consisting of potassium Au chloride (KAuCl4), gold potassium cyanide (KAu(CN)2), and chloroauric acid (HAuCl4).
- The alkaline compound may be selected from the group consisting of potassium carbonate, sodium hydroxide, potassium hydroxide, butylamine, and sodium hydrogen carbonate.
- The substrate may be formed of a dielectric material selected from the group consisting of glass, plastic, and silicon.
- The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
-
FIG. 1 is field emission scanning electron microscopic (FE-SEM) images of gold (Au) thin films deposited on glass substrates according to reaction times of 20 minutes, 40 minutes, 60 minutes, and 80 minutes, respectively; -
FIG. 2 illustrates ultraviolet-visible (UV-vis) absorption spectra of the Au thin films deposited on the glass substrates according to the reaction times of 20 minutes, 40 minutes, 60 minutes, and 80 minutes; -
FIG. 3 (a) illustrates X-ray diffraction (XRD) patterns of the Au thin films deposited on the glass substrates according to the reaction times of 40 minutes and 80 minutes, andFIG. 3 (b) illustrates an X-ray photoelectron spectroscopy (XPS) spectrum of the Au thin film deposited on the glass substrate according to the reaction time of 80 minutes; -
FIG. 4 (a) illustrates surface enhancement Raman scattering (SERS) spectra of benzenthiol (BT) adsorbed on the Au thin film deposited on the glass substrates, andFIG. 4 (b) illustrates relative Raman peak intensities of BT at 1574 cm−1 adsorbed on the Au thin films deposited on the glass substrates; and -
FIG. 5 illustrates SERS spectra of BT at 1574 cm−1 adsorbed on five different batches A through E of an Au film. - Hereinafter, a method of manufacturing a gold (Au) thin film on a dielectric surface by using an electroless-plating method, according to one or more embodiments of the present invention, will now be described in detail.
- First, a reaction mixture is manufactured by adding an Au chloride compound and an alkaline compound to an alcohol-water mixed solution. Here, alcohol is a reducing agent that supplies electrons.
- After putting the substrate into the reaction mixture, the reaction mixture is stirred to form an Au thin film.
- The alcohol-water mixed solution may contain 70 to 90 wt % of alcohol and 30 to 10 wt % of water.
- Also, the alcohol may be C1 to C4 alcohol, and in detail, may be methanol or ethanol. The Au chloride compound may be selected from the group consisting of potassium Au chloride (KAuCl4), gold potassium cyanide (KAu(CN)2), and chloroauric acid (HAuCl4), and the alkaline compound may be selected from the group consisting of potassium carbonate, sodium hydroxide, potassium hydroxide, butylamine, and sodium hydrogen carbonate.
- The substrate may be formed of a dielectric material selected from the group consisting of glass, plastic, and silicon.
- As such, if the Au chloride compound and the alkaline compound are put into the water-alcohol mixed solution that is methanol or ethanol and a temperature is maintained to 50° C. to 70° C., Au nanoparticles adhere to any one of various dielectric surfaces, such as glass, silicon, and plastic surfaces, and sizes of the Au nanoparticles or a thickness of the Au thin film may be adjusted by varying the concentrations of reactants or by adjusting a reaction time.
- A state of the Au thin film adhered on the dielectric surface as such was analyzed by using an ultraviolet-visible (UV-vis) spectrum analyzer, a field emission scanning electron microscope, an X-ray diffraction (XRD) analyzer, and an X-ray photoelectron spectroscopy (XPS) analyzer, and as results, it was determined that the Au thin film adhered on the dielectric surface was formed as Au particles having nanometer sizes gather together, and sizes of the Au particles and a thickness of the Au thin film depend on a reaction time.
- Also, the Au thin film manufactured by using the electroless-plating method, according to an embodiment of the present invention, showed uniform surface enhancement Raman scattering (SERS) activity on a surface up to hundreds of thousands of square micrometers, and an enhancement factor (EF) calculated by using benzenthiol (BT) as a prototype adsorbent reached up to 7.6×104.
- A cover glass having a diameter of 18 mm (manufactured by Marienfeld) was soaked in an alkaline cleaning solution (pH=9.2; and 0.5% Hellmanex II, Hellma) for 3 hours and then was sonicated in distilled water for 10 minutes. Next, the cover glass was washed with ethanol and then was finally dried in an oven at a temperature of 60° C. for 30 minutes. The washed cover glass was dipped in a reaction mixture and then the reaction mixture was vigorously stirred at a temperature of 50° C. Here, the reaction time was varied from 20 minutes to 80 minutes. The reaction mixture was obtained by mixing an aqueous solution containing 0.5 mL of 0.1 M HAuCl4 and 1 mL of 1 M K2CO3 with 8.5 mL of methanol solution, and at this time, the pH of the reaction mixture was adjusted to 11 to 12. An Au-coated glass obtained as such was washed with ethanol and then dried in air.
- For self-assembly of BT on the Au-coated glass, the Au-coated glass was immersed in a 10 mM methanol solution of BT for 30 minutes, washed with deionized water several times, and then dried in air.
- 1. Methods of Analyzing Properties
- UV-vis spectra were obtained by using a spectrum analyzer (Avantes 3648), and field emission scanning electron microscopic (FE-SEM) images were obtained by using a field emission scanning electron microscope (JSM-6700F) that operated at 5.0 kV.
- XRD was analyzed by using an X-ray diffractometer (Rigaku Model MiniFlex powder diffractometer) using Cu Kα radiation. Also, XPS measurements were performed by using an AXISH model using Mg Kα X-ray as a light source.
- SERS was analyzed by using a spectroscope (Renishaw Raman System Model 2000) equipped with an integral microscope (Olympus BH2-UMA). The 632.8 nm line from a 17 mW He/Ne laser (Spectra Physics Model 127) was used as an excitation source. A Raman band of a silicon wafer at 520 cm−1 was used to calibrate the spectroscope. Accuracy of a measured spectrum value was at least 1 cm−1.
- Atomic force microscopic (AFM) images were obtained by using an atomic force microscope (Instruments Nanoscope IIIa system), and at this time a nominal spring constant was from 20 N/m to 100 N/m, and an 125 μm long etched cantilever was used. Topographic images were recorded in a tapping mode under an operating frequency within 300 kHz at a scanning speed of 2 Hz.
- 2. Experiment Results
-
FIG. 1 is FE-SEM images of Au thin films deposited on glass substrates according to reaction times, for example, 20 minutes, 40 minutes, 60 minutes, and 80 minutes, respectively. An average particle size of the Au thin film according to the reaction time of 20 minutes is 22.8±3.8 nm, an average particle size of the Au thin film according to the reaction time of 40 minutes is 176±18 nm, and as the reaction time increases, Au nanoparticles coalesce into large grains to form a network structure and cover an entire surface of the glass substrate. Meanwhile, it is difficult to determine grain sizes of the Au thin films according to the reaction times of 60 minutes and 80 minutes. -
FIG. 2 illustrates UV-vis absorption spectra of the Au thin films deposited on the glass substrates according to the reaction times, for example, 20 minutes, 40 minutes, 60 minutes, and 80 minutes. The Au thin film according to the reaction time of 20 minutes shows maximum absorption at 534 nm, and the Au thin films according to the reaction times of 40 minutes, 60 minutes and 80 minutes show maximum absorption at 563 nm, 584 nm, and 639 nm, respectively. -
FIG. 3 (a) illustrates XRD patterns of the Au thin films deposited on the glass substrates, wherein XRD peaks positioned at 38.2°, 44.4°, 64.6°, and 77.6° respectively correspond to (111), (200), (220), and (311) lattice planes of face centered cubic gold particles. -
FIG. 3 (b) illustrates an XPS spectrum of the Au thin film deposited on the glass substrate according to the reaction time of 80 minutes, wherein XRD peaks at 83.7 eV and 87.4 eV respectively correspond to 4f 7/2 and 4f 5/2 peaks of zero-valent Au. -
FIG. 4 (a) illustrates SERS spectra of BT adsorbed on the Au thin films deposited on the glass substrates, wherein bands at 998 cm−1, 1021 cm−1, 1072 cm−1, and 1573 cm−1 respectively correspond to an in-plane ring-breathing mode, an in-plane C-H bending mode, an in-plane ring-breathing mode coupled with a C-S stretching mode, and a C-C stretching mode, -
FIG. 4 (b) illustrates relative Raman peak intensities of BT at 1574 cm−1 adsorbed on the Au thin films deposited on the glass substrates, wherein the Au thin film according to the reaction time of 60 minutes shows the most intense SERS peak of BT, whereas the Au thin films according to the reaction times of 20 minutes and 80 minutes show very weak SERS peaks. Such results highlight the importance of gaps and crevices in a metal nanostructure in SERS measurements. - Also, an SERS EF may be calculated according to
Equation 1 below. -
EF=(I SERS /I NR)(N NR /N SERS) (1) - Here, ISERS and INR respectively denote SERS intensity of BT on an Au thin film and normal Raman (NR) scattering intensity of BT in a bulk. NNR and NSERS denote numbers obtained by illuminating BT molecules by using a laser beam to respectively obtain SERS and NR spectra.
- ISERS and INR were measured at 1574 cm−1, and NNR and NSERS were calculated based on estimated concentration of surface BT species, density of bulk BT, and sampling areas. It was assumed that equilibrated surface concentration of BT is the same as that of Au and silver (Ag), i.e., up to 7.1×10−10. NSERS was calculated to be 1.0×10−17 mol considering a sampling area having a diameter of 1 μm and a surface roughness factor (up to 1.47) obtained from AFM measurement of the thin film according to the reaction time of 60 minutes. When an NR spectrum of pure BT was measured, a sampling volume was a product of a laser spot and a penetration depth was about 15 μm. NNR was 1.1×1013 mol when density of BT was 1.07 g/cm3.
- Since an intensity ratio of ISERS/INR was measured to be up to 6.9 at 632.8 nm excitation, EF may be as large as 7.6×104. The calculated EF was in fact comparable to 106 for pyridine adsorbed onto an electrochemically roughened Au surface. In addition, the SERS spectra on the Au films were proved to be highly reproducible.
-
FIG. 5 illustrates SERS spectra of BT at 1574 cm−1 adsorbed on five different batches A through E of the Au film according to the reaction time of 60 minutes. Peak intensities at 1574 cm−1 were normalized with respect to silicon wafers, and batch-to-batch relative deviation was 15% whereas spot-to-spot relative deviation was 12%. - Accordingly, an Au thin film manufactured by using an electroless-plating method, according to an embodiment of the present invention, shows uniform SERS activity on an area up to hundreds of thousands of square micrometers, and an EF calculated by using BT as a prototype adsorbent reached up to 7.6×104.
- By using the method described above, an Au thin film having an effect of SERS activity may be conveniently and stably formed on a dielectric surface.
- According to the method of manufacturing an Au thin film on a dielectric surface by using an electroless-plating method of the present invention, compounds that are relatively low toxic may be used as raw materials, and an Au thin film having an SERS effect may be conveniently and stably formed on a dielectric surface without having to use expensive additional equipment, such as a vacuum device. In detail, since a thickness of an Au thin film formed on a dielectric substrate, such as glass, may be adjusted, the Au thin film may be applied to various fields, such as semiconductor fields, energy fields, catalyst fields, medical fields, and diagnosis fields.
- While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (7)
1. A method of manufacturing a gold (Au) thin film by using an electroless-plating method, the method comprising:
manufacturing a reaction mixture by adding an Au chloride compound and an alkaline compound to an alcohol-water mixed solution; and
forming an Au thin film by putting a substrate in the reaction mixture and stirring the reaction mixture in the temperature range of 50˜70° C.
2. The method of claim 1 , wherein the alcohol-water mixed solution is a mixed solution containing 70 to 90 wt % of alcohol and 30 to 10 wt % of water.
3. The method of claim 1 , wherein the alcohol is C1 to C4 alcohol.
4. The method of claim 1 , wherein the Au chloride compound is selected from the group consisting of potassium Au chloride (KAuCl4), gold potassium cyanide (KAu(CN)2), and chloroauric acid (HAuCl4).
5. The method of claim 1 , wherein the alkaline compound is selected from the group consisting of potassium carbonate, sodium hydroxide, potassium hydroxide, butylamine, and sodium hydrogen carbonate.
6. The method of claim 1 , wherein the substrate is formed of a dielectric material selected from the group consisting of glass, plastic, and silicon.
7. The method of claim 2 , wherein the alcohol is C1 to C4 alcohol.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0100496 | 2013-08-23 | ||
KR1020130100496A KR101617657B1 (en) | 2013-08-23 | 2013-08-23 | Manufacturing method of gold thin films using electroless-plating |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150056379A1 true US20150056379A1 (en) | 2015-02-26 |
Family
ID=52480616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/467,035 Abandoned US20150056379A1 (en) | 2013-08-23 | 2014-08-24 | Method of manufacturing gold thin film by using electroless-plating method |
Country Status (2)
Country | Link |
---|---|
US (1) | US20150056379A1 (en) |
KR (1) | KR101617657B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105821398A (en) * | 2016-03-21 | 2016-08-03 | 上海交通大学 | Preparation method for periodic metal material of bicontinuous internal communicating structure and application of periodic metal material |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102574198B1 (en) * | 2021-08-23 | 2023-09-07 | 한국생산기술연구원 | Method of plating gold thin film on substrate for surface enhanced raman scattering integrated with blood pretreatment separator by electroless plating |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993808A (en) * | 1971-08-13 | 1976-11-23 | Hitachi, Ltd. | Method for electroless plating gold directly on tungsten or molybdenum |
US5635253A (en) * | 1994-08-30 | 1997-06-03 | International Business Machines Corporation | Method of replenishing electroless gold plating baths |
US5925415A (en) * | 1996-06-05 | 1999-07-20 | The University Of Toledo | Electroless plating of a metal layer on an activated substrate |
US20040241462A1 (en) * | 2003-06-02 | 2004-12-02 | In-Ho Lee | Substrate for immobilizing physiological material, and a method of preparing the same |
US20100320635A1 (en) * | 2009-06-17 | 2010-12-23 | Hitachi Maxell, Ltd | Method for producing polymer member having plated film |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100717336B1 (en) | 2005-11-30 | 2007-05-10 | 한국기계연구원 | A plating method of metal layer by a galvanic displacement |
-
2013
- 2013-08-23 KR KR1020130100496A patent/KR101617657B1/en active IP Right Grant
-
2014
- 2014-08-24 US US14/467,035 patent/US20150056379A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993808A (en) * | 1971-08-13 | 1976-11-23 | Hitachi, Ltd. | Method for electroless plating gold directly on tungsten or molybdenum |
US5635253A (en) * | 1994-08-30 | 1997-06-03 | International Business Machines Corporation | Method of replenishing electroless gold plating baths |
US5925415A (en) * | 1996-06-05 | 1999-07-20 | The University Of Toledo | Electroless plating of a metal layer on an activated substrate |
US20040241462A1 (en) * | 2003-06-02 | 2004-12-02 | In-Ho Lee | Substrate for immobilizing physiological material, and a method of preparing the same |
US20100320635A1 (en) * | 2009-06-17 | 2010-12-23 | Hitachi Maxell, Ltd | Method for producing polymer member having plated film |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105821398A (en) * | 2016-03-21 | 2016-08-03 | 上海交通大学 | Preparation method for periodic metal material of bicontinuous internal communicating structure and application of periodic metal material |
CN105821398B (en) * | 2016-03-21 | 2019-01-11 | 上海交通大学 | The preparation method and applications of the periodical metal material of connection structure in co-continuous |
Also Published As
Publication number | Publication date |
---|---|
KR20150022508A (en) | 2015-03-04 |
KR101617657B1 (en) | 2016-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Au et al. | Synthesis and optical properties of cubic gold nanoframes | |
US20080286526A1 (en) | Structure for supporting sample to be subjected to surface enhanced vibrational spectroscopic analysis and method of manufacturing the same | |
Hou et al. | Synthesis, optical and electrochemical properties of ZnO nanorod hybrids loaded with high-density gold nanoparticles | |
US20080286563A1 (en) | Probe used for surface enhanced vibrational spectroscopic analysis and method of manufacturing the same | |
Muench et al. | Multiple activation of ion track etched polycarbonate for the electroless synthesis of metal nanotubes | |
Li et al. | A facile synthesis of multifunctional ZnO/Ag sea urchin-like hybrids as highly sensitive substrates for surface-enhanced Raman detection | |
JP2006145230A (en) | Specimen carrier and its manufacturing method | |
Shi et al. | Chemical bath deposition of ZnO on functionalized self-assembled monolayers: selective deposition and control of deposit morphology | |
Xue et al. | Highly sensitive SERS behavior and wavelength-dependence charge transfer effect on the PS/Ag/ZIF-8 substrate | |
CN108226138A (en) | A kind of hollow pipe array surface enhancing Raman scattering substrate of Ag nanometer sheets assembling | |
US9631280B2 (en) | Method of manufacturing palladium thin film by using electroless-plating method | |
TW201908701A (en) | Carrier for raman spectroscopy and method of manufacturing the same | |
US20150056379A1 (en) | Method of manufacturing gold thin film by using electroless-plating method | |
Jang et al. | Silver disposition and dynamics during electroless metal thin film synthesis | |
JP2008128786A (en) | Surface-strengthened tool for vibration spectral analysis and its manufacturing method | |
Volochanskyi et al. | Electroless deposition via galvanic displacement as a simple way for the preparation of silver, gold, and copper SERS-active substrates | |
Chen et al. | Shape-diversified silver nanostructures uniformly covered on aluminium micro-powders as effective SERS substrates | |
Chakrapani et al. | Interconnected, ultrafine osmium nanoclusters: preparation and surface enhanced Raman scattering activity | |
Yasseri et al. | Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition | |
KR102561196B1 (en) | Method of manufacturing porous nanostructure, 3-dimensional electrode and sensor comprising porous nanostructure manufactured thereby and apparatus for manufacturing porous nanostructure | |
Gordeychuk et al. | Copper Particles Generated During in situ Laser-induced Synthesis Exhibit Catalytic Activity Towards Formation of Gas Phase. | |
Fioravanti et al. | Characterization of SERS platforms designed by electrophoretic deposition on CVD graphene and ITO/glass | |
Bhuvana et al. | Nanogranular Au films deposited on carbon covered Si substrates for enhanced optical reflectivity and Raman scattering | |
US20220112604A1 (en) | Composition for electroless platinum plating and electroless platinum plating method using the same | |
Banu et al. | A novel electroless method for the deposition of single-crystalline gold nanocrystals on and inside an organic solid-matrix |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PAR Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHIN, KUAN SOO;CHO, YOUNG KWAN;PARK, MYUNG CHAN;REEL/FRAME:033597/0690 Effective date: 20140821 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |