US20140291713A1 - Flip-chip light emitting diode package with moisture barrier layer - Google Patents
Flip-chip light emitting diode package with moisture barrier layer Download PDFInfo
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- US20140291713A1 US20140291713A1 US14/096,031 US201314096031A US2014291713A1 US 20140291713 A1 US20140291713 A1 US 20140291713A1 US 201314096031 A US201314096031 A US 201314096031A US 2014291713 A1 US2014291713 A1 US 2014291713A1
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- 230000004888 barrier function Effects 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000005538 encapsulation Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 230000000149 penetrating effect Effects 0.000 claims abstract 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005476 soldering Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 241000237858 Gastropoda Species 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present disclosure relates generally to a light emitting diode (LED) package with a moisture barrier layer formed on a bottom thereof, wherein the LED package has an LED die which is mounted to electrodes of the LED package by flip-chip technology.
- LED light emitting diode
- LEDs are solid state light emitting devices formed of semiconductors. LEDs are more stable and reliable than other conventional light sources such as incandescent bulbs. Thus, LEDs are being widely used in various fields such as numeral/character displaying elements, signal lights, and lighting and display devices.
- An LED package usually includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced from the first electrode by a spacer, and an LED die mounted on the substrate and electrically connected to the first and second electrodes by wires.
- the spacer has a central protrusion above the first and second electrodes, thereby to hinder a connection of the LED die to the electrodes by flip-chip technology.
- it is common to form an encapsulation layer on the substrate to encapsulate the LED die mounted on the substrate, whereby the LED die inside of the LED package is isolated from ambient air.
- moisture may still easily permeate into the inside of the LED package through the substrate-electrode interface, due to weak bonding between the electrode(s) and the substrate. Permeation is particularly common when the substrate is made of material such as silicon resin or epoxy resin, whereby a contact area between the electrode(s) and the LED die inside of the LED package is prone to oxidation by the moisture. That is, such kind of the LED package has low oxidation resistance. Furthermore, when there is oxidation, it is difficult for heat generated by the LED die to be dissipated. Buildup of the heat may greatly accelerate deterioration and degradation of the LED package.
- FIG. 1 is a schematic, cross-sectional view of a light emitting diode (LED) package in accordance with a first embodiment of the present disclosure.
- LED light emitting diode
- FIG. 2 is a top plan view of the LED package of FIG. 1 , with an encapsulation layer omitted for clarity.
- FIG. 3 is a bottom plan view of the LED package of FIG. 1 .
- FIG. 4 is a schematic, bottom plan view of a light emitting diode (LED) package in accordance with a second embodiment of the present disclosure.
- LED light emitting diode
- FIG. 5 is a schematic, bottom plan view of a light emitting diode (LED) package in accordance with a third embodiment of the present disclosure.
- LED light emitting diode
- a light emitting diode (LED) package 1 in accordance with a first embodiment of the present disclosure includes a substrate 10 , a first electrode 20 embedded in the substrate 10 , a second electrode 21 embedded in the substrate 10 and spaced from the first electrode 20 , an LED die 60 mounted on the substrate 10 and electrically connected to the first and second electrodes 20 , 21 by flip-chip technology, a reflective cup 40 formed on the substrate 10 and surrounding the LED die 60 , and an encapsulation layer 50 formed on the substrate 10 , enclosed by the reflective cup 40 and encapsulating the LED die 60 .
- the LED package 1 further includes a moisture barrier layer 30 (as shown in FIG. 3 ) attached on the bottom thereof to cover a part of joints of the first and second electrodes 20 , 21 and the substrate 10 .
- the substrate 10 includes a top surface 101 and a bottom surface 102 at opposite sides thereof.
- the substrate 10 is rectangular, and both the top and bottom surfaces 101 , 102 of the substrate 10 are horizontal surfaces which are in parallel with each other.
- the substrate 10 is a highly heat conductive and electrically insulated substrate, which is made of a material such as ceramic.
- the first and second electrodes 20 , 21 are spaced from each other by a central part of the substrate 10 . Thus, the first and second electrodes 20 , 21 are electrically insulated from each other.
- the top surface 101 of the substrate 10 at the central part thereof is coplanar with top faces 201 , 211 of the first and second electrodes 20 , 21 , whereby the LED die 60 can be mounted to the first and second electrodes 20 , 21 by flip-chip technology as shown in FIG. 1 of the present disclosure.
- the first and second electrodes 20 , 21 respectively penetrate downwardly through the substrate 10 from the top surface 101 to the bottom surface 102 .
- the first electrode 20 includes the top face 201 and a bottom face 202 at opposite sides thereof.
- the second electrode 21 includes the top face 211 and a bottom face 212 at opposite sides thereof.
- the top faces 201 , 211 of the first and second electrodes 20 , 21 are exposed at the top surface 101 of the substrate 10 .
- the bottom faces 202 , 212 of the first and second electrodes 20 , 21 are exposed at the bottom surface 102 of the substrate 10 .
- the top faces 201 , 211 of the first and second electrodes 20 , 21 are coplanar with the top surface 101 of the substrate 10
- the bottom faces 202 , 212 of the first and second electrodes 20 , 21 are coplanar with the bottom surface 102 of the substrate 10
- a top end of each of the first and second electrodes 20 , 21 can protrude upwardly from the top surface 101 of the substrate 10 by a short distance
- a bottom end of each of the first and second electrodes 20 , 21 can protrude downwardly from the bottom surface 102 of the substrate 10 by a short distance.
- the first electrode 20 includes an elongated first head portion 203 and a tapered first branch portion 204 extending downward from a central region of a bottom of the first head portion 203 .
- the second electrode 21 includes an elongated second head portion 213 and a tapered second branch portion 214 extending downward from a central region of a bottom of the second head portion 213 .
- Each of the first and second electrodes 20 , 21 has a transverse cross section with a shape of a generally truncated wedge.
- a transverse cross section width of the first electrode 20 gradually decreases along a thickness direction thereof from the top face 201 towards the bottom face 202 (i.e. a direction from top to bottom in FIG. 1 ).
- a transverse cross section width of the second electrode 21 gradually decreases along a thickness direction thereof from the top face 211 towards the bottom face 212 .
- a step (not labeled) is formed between the first head portion 203 and the tapered first branch portion 204 of the first electrode 20 ;
- a step (not labeled) is formed between the second head portion 213 and the tapered second branch portion 214 of the second electrode 21 .
- the steps are provided for increasing an engagement between the first and second electrodes 20 , 21 and the substrate 10 .
- both the first and second head portions 203 , 213 of the first and second electrodes 20 , 21 are an inverted pyramid frustum
- both the first and second branch portions 204 , 214 of the first and second electrodes 20 , 21 are an inverted cone frustum.
- the reflective cup 40 defines a receiving cavity 401 therein.
- the LED die 60 is received in the receiving cavity 301 and surrounded by the reflective cup 40 .
- a lateral outer periphery of the reflective cup 40 is aligned with a lateral periphery of the substrate 10 .
- the reflective cup 40 and the substrate 10 are separately molded, and then combined together into one integrated piece via gluing.
- the reflective cup 40 and the substrate 10 could be integrally formed as a monolithic piece by injection molding. It is preferred that the reflective cup 40 is made of a material the same as the substrate 10 , such as ceramic.
- the top face 201 of the first electrode 20 and the top face 211 of the second electrode 21 each are rectangular. A majority of the top face 201 of the first electrode 20 is exposed at a bottom of the receiving cavity 401 of the reflective cup 40 , with a left-side portion of the top face 201 being covered by the reflective cup 40 . A majority of the top face 211 of the second electrode 21 is exposed at the bottom of the receiving cavity 401 of the reflective cup 40 , with a right-side portion of the top face 211 being covered by the reflective cup 40 . That is, a short side of the top face 201 of the first electrode 20 away from the second electrode 21 and a short side of the top face 211 of the second electrode 21 away from the first electrode 20 each are covered by the reflective cup 40 .
- the encapsulation layer 50 is formed in the receiving cavity 401 of the reflective cup 40 and encapsulates the LED die 60 therein.
- the encapsulation layer 50 completely fills the receiving cavity 401 . It is preferred that the encapsulation layer 50 contains phosphor particles distributed therein to convert a wavelength range of light rays emitted from the LED die 60 to a desired wavelength range and scatter the light rays.
- the moisture barrier layer 30 includes a top face 31 and a bottom face 32 at opposite sides thereof.
- the exposed bottom faces 202 , 212 of the first and second electrodes 20 , 21 are spaced from the bottom face 32 of the moisture barrier layer 30 by a short distance (as shown in FIG. 1 ), i.e., a thickness of the moisture barrier layer 30 .
- the moisture barrier layer 30 includes a first portion 301 covering a part of an outer joint of the first electrode 20 and the substrate 10 , a second portion 302 covering a part of an outer joint of the second electrode 21 and the substrate 10 , and a third portion 303 covering a part of inner joints of the first and second electrode 20 , 21 and the substrate 10 .
- the first, second and third portions 301 , 302 and 303 of the moisture barrier layer 30 are separated from each other.
- the first and third portions 301 , 303 of the moisture barrier layer 30 cooperatively define a first gap 33 (as shown in FIG. 1 ) therebetween.
- the second and third portions 302 , 303 of the moisture barrier layer 30 cooperatively define a second gap 34 (as shown in FIG. 1 ) therebetween.
- the first and second gaps 33 , 34 are adapted for accommodating soldering slugs (not shown) therein which are made of tin alloy.
- the first and second electrodes 20 , 21 are electrically connected to external circuitry such as printed circuit board (PCB) via the soldering slugs, respectively.
- PCB printed circuit board
- the first portion 301 a of the moisture barrier layer 30 a includes a first barrier segment 3011 a and a second barrier segment 3012 a separated from the first barrier segment 3011 a.
- the second portion 302 a of the moisture barrier layer 30 a includes a third barrier segment 3021 a and a fourth barrier segment 3022 a separated from the third barrier segment 3021 a.
- the second barrier segment 3012 a of the first portion 301 a is adjacent to the third barrier segment 3021 a of the second portion 302 a of the moisture barrier layer 30 a.
- a light emitting diode (LED) package lb in accordance with a third embodiment of the present disclosure is illustrated.
- the first portion 301 b of the moisture barrier layer 30 b extends along the periphery of the exposed bottom face 202 of the first electrode 20 and completely covers the joint of the first electrode 20 and the substrate 10 .
- the second portion 302 b of the moisture barrier layer 30 b extends along the periphery of the exposed bottom face 212 of the second electrode 21 and completely covers the joint of the second electrode 21 and the substrate 10 .
- the first portion 301 b of the moisture barrier layer 30 b defines a first opening 35 to accommodate the soldering slug therein.
- the second portion 302 b of the moisture barrier layer 30 b defines a second opening 36 to accommodate the soldering slug therein.
- the moisture barrier layer 30 , 30 a, 30 b is attached on the bottom of the LED package 1 , la, lb to cover a joint(s) of the first and/or second electrode 20 , 21 and the substrate 10 . Accordingly, a path along which moisture might enter a joint(s) of the first and/or second electrodes 20 , 21 and the substrate 10 is reduced by the moisture barrier layer 30 , 30 a, 30 b. Thereby, deterioration of the LED package 1 due to infiltration of moisture into the joint(s) is effectively delayed. That is, the LED package 1 , la, lb has high oxidation resistance, and a rate of deterioration of the LED package 1 is reduced.
- the bottom faces 202 , 212 of the first and second electrodes 20 , 21 are exposed at the bottom surface 102 of the substrate 10 . Therefore heat generated by the LED die 60 is effectively dissipated outside the package through the bottom faces 202 , 212 .
- the exposed bottom faces 202 , 212 is spaced from the bottom face 32 of the moisture barrier layer 30 , 30 a, 30 b, thus the possibility of overflow of the soldering slugs to contaminate each other to cause a short-circuit can be greatly reduced.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
- The present disclosure relates generally to a light emitting diode (LED) package with a moisture barrier layer formed on a bottom thereof, wherein the LED package has an LED die which is mounted to electrodes of the LED package by flip-chip technology.
- LEDs are solid state light emitting devices formed of semiconductors. LEDs are more stable and reliable than other conventional light sources such as incandescent bulbs. Thus, LEDs are being widely used in various fields such as numeral/character displaying elements, signal lights, and lighting and display devices.
- An LED package usually includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced from the first electrode by a spacer, and an LED die mounted on the substrate and electrically connected to the first and second electrodes by wires. The spacer has a central protrusion above the first and second electrodes, thereby to hinder a connection of the LED die to the electrodes by flip-chip technology. In order to prolong a life-span of the LED package, it is common to form an encapsulation layer on the substrate to encapsulate the LED die mounted on the substrate, whereby the LED die inside of the LED package is isolated from ambient air.
- However, moisture may still easily permeate into the inside of the LED package through the substrate-electrode interface, due to weak bonding between the electrode(s) and the substrate. Permeation is particularly common when the substrate is made of material such as silicon resin or epoxy resin, whereby a contact area between the electrode(s) and the LED die inside of the LED package is prone to oxidation by the moisture. That is, such kind of the LED package has low oxidation resistance. Furthermore, when there is oxidation, it is difficult for heat generated by the LED die to be dissipated. Buildup of the heat may greatly accelerate deterioration and degradation of the LED package.
- What is needed, therefore, is an improved LED package which can overcome the above mentioned limitations.
- Many aspects of the present embodiments can be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the present embodiments. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the views.
-
FIG. 1 is a schematic, cross-sectional view of a light emitting diode (LED) package in accordance with a first embodiment of the present disclosure. -
FIG. 2 is a top plan view of the LED package ofFIG. 1 , with an encapsulation layer omitted for clarity. -
FIG. 3 is a bottom plan view of the LED package ofFIG. 1 . -
FIG. 4 is a schematic, bottom plan view of a light emitting diode (LED) package in accordance with a second embodiment of the present disclosure. -
FIG. 5 is a schematic, bottom plan view of a light emitting diode (LED) package in accordance with a third embodiment of the present disclosure. - Referring to
FIGS. 1 , 2 and 3, a light emitting diode (LED)package 1 in accordance with a first embodiment of the present disclosure includes asubstrate 10, afirst electrode 20 embedded in thesubstrate 10, asecond electrode 21 embedded in thesubstrate 10 and spaced from thefirst electrode 20, anLED die 60 mounted on thesubstrate 10 and electrically connected to the first andsecond electrodes reflective cup 40 formed on thesubstrate 10 and surrounding theLED die 60, and anencapsulation layer 50 formed on thesubstrate 10, enclosed by thereflective cup 40 and encapsulating theLED die 60. TheLED package 1 further includes a moisture barrier layer 30 (as shown inFIG. 3 ) attached on the bottom thereof to cover a part of joints of the first andsecond electrodes substrate 10. - The
substrate 10 includes atop surface 101 and abottom surface 102 at opposite sides thereof. In the present embodiment, thesubstrate 10 is rectangular, and both the top andbottom surfaces substrate 10 are horizontal surfaces which are in parallel with each other. Thesubstrate 10 is a highly heat conductive and electrically insulated substrate, which is made of a material such as ceramic. The first andsecond electrodes substrate 10. Thus, the first andsecond electrodes top surface 101 of thesubstrate 10 at the central part thereof is coplanar withtop faces second electrodes LED die 60 can be mounted to the first andsecond electrodes FIG. 1 of the present disclosure. - The first and
second electrodes substrate 10 from thetop surface 101 to thebottom surface 102. Thefirst electrode 20 includes thetop face 201 and abottom face 202 at opposite sides thereof. Thesecond electrode 21 includes thetop face 211 and abottom face 212 at opposite sides thereof. Thetop faces second electrodes top surface 101 of thesubstrate 10. The bottom faces 202, 212 of the first andsecond electrodes bottom surface 102 of thesubstrate 10. - In the present embodiment, the
top faces second electrodes top surface 101 of thesubstrate 10, and the bottom faces 202, 212 of the first andsecond electrodes bottom surface 102 of thesubstrate 10. Alternatively, a top end of each of the first andsecond electrodes top surface 101 of thesubstrate 10 by a short distance, and a bottom end of each of the first andsecond electrodes bottom surface 102 of thesubstrate 10 by a short distance. - The
first electrode 20 includes an elongatedfirst head portion 203 and a taperedfirst branch portion 204 extending downward from a central region of a bottom of thefirst head portion 203. Similarly, thesecond electrode 21 includes an elongatedsecond head portion 213 and a taperedsecond branch portion 214 extending downward from a central region of a bottom of thesecond head portion 213. Each of the first andsecond electrodes first electrode 20 gradually decreases along a thickness direction thereof from thetop face 201 towards the bottom face 202 (i.e. a direction from top to bottom inFIG. 1 ). Similarly, a transverse cross section width of thesecond electrode 21 gradually decreases along a thickness direction thereof from thetop face 211 towards thebottom face 212. A step (not labeled) is formed between thefirst head portion 203 and the taperedfirst branch portion 204 of thefirst electrode 20; - similarly, a step (not labeled) is formed between the
second head portion 213 and the taperedsecond branch portion 214 of thesecond electrode 21. The steps are provided for increasing an engagement between the first andsecond electrodes substrate 10. - In the present embodiment, both the first and
second head portions second electrodes second branch portions second electrodes - The
reflective cup 40 defines areceiving cavity 401 therein. TheLED die 60 is received in thereceiving cavity 301 and surrounded by thereflective cup 40. A lateral outer periphery of thereflective cup 40 is aligned with a lateral periphery of thesubstrate 10. In the present embodiment, thereflective cup 40 and thesubstrate 10 are separately molded, and then combined together into one integrated piece via gluing. Alternatively, thereflective cup 40 and thesubstrate 10 could be integrally formed as a monolithic piece by injection molding. It is preferred that thereflective cup 40 is made of a material the same as thesubstrate 10, such as ceramic. - The
top face 201 of thefirst electrode 20 and thetop face 211 of thesecond electrode 21 each are rectangular. A majority of thetop face 201 of thefirst electrode 20 is exposed at a bottom of thereceiving cavity 401 of thereflective cup 40, with a left-side portion of thetop face 201 being covered by thereflective cup 40. A majority of thetop face 211 of thesecond electrode 21 is exposed at the bottom of thereceiving cavity 401 of thereflective cup 40, with a right-side portion of thetop face 211 being covered by thereflective cup 40. That is, a short side of thetop face 201 of thefirst electrode 20 away from thesecond electrode 21 and a short side of thetop face 211 of thesecond electrode 21 away from thefirst electrode 20 each are covered by thereflective cup 40. - The
encapsulation layer 50 is formed in thereceiving cavity 401 of thereflective cup 40 and encapsulates theLED die 60 therein. Theencapsulation layer 50 completely fills thereceiving cavity 401. It is preferred that theencapsulation layer 50 contains phosphor particles distributed therein to convert a wavelength range of light rays emitted from theLED die 60 to a desired wavelength range and scatter the light rays. - The
moisture barrier layer 30 includes atop face 31 and abottom face 32 at opposite sides thereof. The exposed bottom faces 202, 212 of the first andsecond electrodes bottom face 32 of themoisture barrier layer 30 by a short distance (as shown inFIG. 1 ), i.e., a thickness of themoisture barrier layer 30. - The
moisture barrier layer 30 includes afirst portion 301 covering a part of an outer joint of thefirst electrode 20 and thesubstrate 10, asecond portion 302 covering a part of an outer joint of thesecond electrode 21 and thesubstrate 10, and athird portion 303 covering a part of inner joints of the first andsecond electrode substrate 10. The first, second andthird portions moisture barrier layer 30 are separated from each other. - The first and
third portions moisture barrier layer 30 cooperatively define a first gap 33 (as shown inFIG. 1 ) therebetween. The second andthird portions moisture barrier layer 30 cooperatively define a second gap 34 (as shown inFIG. 1 ) therebetween. The first andsecond gaps second electrodes - Referring to
FIG. 4 , a light emitting diode (LED) package la in accordance with a second embodiment of the present disclosure is illustrated. Different from theLED package 1 as shown inFIG. 3 , in the LED package la, thefirst portion 301 a of the moisture barrier layer 30 a includes afirst barrier segment 3011 a and asecond barrier segment 3012 a separated from thefirst barrier segment 3011 a. Similarly, thesecond portion 302 a of the moisture barrier layer 30 a includes athird barrier segment 3021 a and afourth barrier segment 3022 a separated from thethird barrier segment 3021 a. Thesecond barrier segment 3012 a of thefirst portion 301 a is adjacent to thethird barrier segment 3021 a of thesecond portion 302 a of the moisture barrier layer 30 a. - Referring to
FIG. 5 , a light emitting diode (LED) package lb in accordance with a third embodiment of the present disclosure is illustrated. Different from theLED package 1 as shown inFIG. 3 , in the LED package lb, thefirst portion 301 b of the moisture barrier layer 30 b extends along the periphery of the exposedbottom face 202 of thefirst electrode 20 and completely covers the joint of thefirst electrode 20 and thesubstrate 10. Similarly, thesecond portion 302 b of the moisture barrier layer 30 b extends along the periphery of the exposedbottom face 212 of thesecond electrode 21 and completely covers the joint of thesecond electrode 21 and thesubstrate 10. Thefirst portion 301 b of the moisture barrier layer 30 b defines afirst opening 35 to accommodate the soldering slug therein. Thesecond portion 302 b of the moisture barrier layer 30 b defines asecond opening 36 to accommodate the soldering slug therein. - In the present disclosure, the
moisture barrier layer 30, 30 a, 30 b is attached on the bottom of theLED package 1, la, lb to cover a joint(s) of the first and/orsecond electrode substrate 10. Accordingly, a path along which moisture might enter a joint(s) of the first and/orsecond electrodes substrate 10 is reduced by themoisture barrier layer 30, 30 a, 30 b. Thereby, deterioration of theLED package 1 due to infiltration of moisture into the joint(s) is effectively delayed. That is, theLED package 1, la, lb has high oxidation resistance, and a rate of deterioration of theLED package 1 is reduced. - Furthermore, the bottom faces 202, 212 of the first and
second electrodes bottom surface 102 of thesubstrate 10. Therefore heat generated by the LED die 60 is effectively dissipated outside the package through the bottom faces 202, 212. In addition, the exposed bottom faces 202, 212 is spaced from thebottom face 32 of themoisture barrier layer 30, 30 a, 30 b, thus the possibility of overflow of the soldering slugs to contaminate each other to cause a short-circuit can be greatly reduced. - It is believed that the present embodiments and their advantages will be understood from the foregoing description, and it will be apparent that various changes may be made thereto without departing from the spirit and scope of the disclosure or sacrificing all of its material advantages, the examples hereinbefore described merely being preferred or exemplary embodiments.
Claims (20)
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CN2013101113089 | 2013-04-02 | ||
CN201310111308.9A CN104103734B (en) | 2013-04-02 | 2013-04-02 | Package structure for LED |
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US20140291713A1 true US20140291713A1 (en) | 2014-10-02 |
US9065028B2 US9065028B2 (en) | 2015-06-23 |
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US14/096,031 Active US9065028B2 (en) | 2013-04-02 | 2013-12-04 | Flip-chip light emitting diode package with moisture barrier layer |
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Cited By (3)
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US10411157B2 (en) | 2014-02-07 | 2019-09-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
US20190364669A1 (en) * | 2018-05-25 | 2019-11-28 | Nichia Corporation | Method for manufacturing light emitting module |
US11335843B2 (en) * | 2017-09-05 | 2022-05-17 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device package |
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US9831407B2 (en) * | 2013-11-21 | 2017-11-28 | Lumens Co., Ltd. | Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package |
CN111834510A (en) * | 2019-04-17 | 2020-10-27 | 深圳市明格科技有限公司 | Light emitting diode packaging support |
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US20080191227A1 (en) * | 2005-04-01 | 2008-08-14 | Matsushita Electric Industrial Co., Ltd. | Surface-Mount Type Optical Semiconductor Device and Method For Manufacturing Same |
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US20080191227A1 (en) * | 2005-04-01 | 2008-08-14 | Matsushita Electric Industrial Co., Ltd. | Surface-Mount Type Optical Semiconductor Device and Method For Manufacturing Same |
US20070158674A1 (en) * | 2006-01-06 | 2007-07-12 | Yuichi Taguchi | Light emitting device and manufacturing method thereof |
US20130001633A1 (en) * | 2011-06-29 | 2013-01-03 | Hitachi Cable, Ltd. | Light-emitting element mounting substrate and led package |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10411157B2 (en) | 2014-02-07 | 2019-09-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
US11335843B2 (en) * | 2017-09-05 | 2022-05-17 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device package |
US20190364669A1 (en) * | 2018-05-25 | 2019-11-28 | Nichia Corporation | Method for manufacturing light emitting module |
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CN104103734B (en) | 2017-03-01 |
TW201445771A (en) | 2014-12-01 |
CN104103734A (en) | 2014-10-15 |
US9065028B2 (en) | 2015-06-23 |
TWI505511B (en) | 2015-10-21 |
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