US20140183719A1 - Electronic assembly includes a composite carrier - Google Patents

Electronic assembly includes a composite carrier Download PDF

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Publication number
US20140183719A1
US20140183719A1 US14/202,082 US201414202082A US2014183719A1 US 20140183719 A1 US20140183719 A1 US 20140183719A1 US 201414202082 A US201414202082 A US 201414202082A US 2014183719 A1 US2014183719 A1 US 2014183719A1
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United States
Prior art keywords
die
package substrate
substrate
electronic assembly
composite carrier
Prior art date
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Abandoned
Application number
US14/202,082
Inventor
Margaret Rose Simmons-Matthews
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Texas Instruments Inc
Original Assignee
Texas Instruments Inc
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Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to US14/202,082 priority Critical patent/US20140183719A1/en
Publication of US20140183719A1 publication Critical patent/US20140183719A1/en
Abandoned legal-status Critical Current

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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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Definitions

  • Disclosed embodiments relate to integrated circuit (IC) packaging, and more particularly to die assembly.
  • IC integrated circuit
  • die bonding or “die attach” describes the operation of attaching semiconductor die either to a package substrate or to some other substrate such as tape carrier for tape automated bonding.
  • the die is first picked from a separated wafer or waffle tray, aligned to a target pad on the carrier or substrate, and then permanently attached, usually by a solder or epoxy bond.
  • Die attach temperatures during assembly of IC die is generally performed at a temperature of least 150° C., and can be performed at temperatures of 375° C. or more for eutectic die attach.
  • Assembly of very thin die ( ⁇ 100 ⁇ m thick, e.g., 20 to 80 ⁇ m) to some package substrates, such as organic substrates, is known to be difficult due to the warpage of the die caused by the large coefficient of thermal expansion (CTE) mismatch between the die and the package substrate.
  • CTE coefficient of thermal expansion
  • the CTE of the die may be about 3 ppm/° C.
  • the CTE of the organic substrate may be about 20 ppm/° C. or higher.
  • This problem can be further aggravated by thin package substrates (e.g., about 100-200 ⁇ m thick) that may lack of rigidity over temperature.
  • TSVs through substrate vias
  • pillars e.g., copper pillars
  • studs e.g., gold studs
  • Warpage is also especially problematic for die stacks when one of the die has contacts on both sides, for example, involving flip chip package substrate connections on one side of the die and small area TSV connections on the other side of the die.
  • One known method for addressing the above described warpage problem is using low CTE package substrates that provide improved CTE matching relative to the die.
  • ceramic substrates and some specialized polymer substrates may provide improved CTE matching with the die.
  • low CTE package substrates are generally significantly more expensive as compared to conventional epoxy-glass resin-based (e.g., BT resin) organic substrates. What is needed is new packaging methodology for minimizing warpage and resulting effects of the CTE mismatch between the die and package substrate during assembly to allow use of conventional polymer substrates.
  • a composite carrier comprising a package substrate including at least one embedded metal layer that has its bottom surface secured to a semiconductor wafer controls the CTE mismatch between the die and the substrate.
  • the Inventor has recognized that the CTE of the composite carrier will be largely driven by the CTE of the semiconductor carrier wafer which is selected to match the CTE of the die so that despite the CTE mismatch between the die and the package substrate, the package substrate will have little impact on ⁇ CTE driven warpage during assembly.
  • the die and the wafer carrier can both comprise silicon.
  • the package substrate is generally a polymer substrate, such as an organic substrate.
  • the package substrate has a TCE that is at least is 10 ppm/° C. different (typically being higher) as compared to the CTE of the die.
  • the composite carrier can be provided prior to the start of the assembly process. Die attach processing is performed on the package substrate while the semiconductor wafer is attached thereto that acts as a carrier wafer.
  • the semiconductor wafer may be removed later in the assembly flow after all die attachment is complete at which time the need for flat die surfaces is no longer generally important.
  • a plurality of electrically conductive connectors e.g., a BGA
  • Sawing through the package substrate forms a plurality of die packages.
  • Disclosed embodiments include assembly of single die packages and stacked die packages that include two or more stacked die.
  • the die can include TSV die.
  • FIG. 1 shows an exemplary method for assembling die packages, according to a disclosed embodiment.
  • FIG. 2 shows an exemplary method for assembling stacked die packages, according to a disclosed embodiment.
  • FIG. 3 shows an exemplary method for assembling stacked die packages that include TSV die, according to a disclosed embodiment.
  • FIGS. 4A-G show successive cross sectional depictions that result from steps in the exemplary method described relative to FIG. 3 .
  • FIG. 1 shows an exemplary method 100 for assembling die packages, according to a disclosed embodiment.
  • Step 101 comprises attaching contacts that are on a first side of a plurality of first die to substrate pads on a top surface of a composite carrier.
  • the first die may be attached face down (i.e., flip chip) or face (i.e., circuit side) up (e.g., for later wire bonding, or using TSV die).
  • the CTE difference between the die e.g., about 3 ppm/° C. for a silicon die
  • the package substrate is generally at least 10 ppm/° C.
  • step 101 comprises die attach and underfill of a plurality of singulated die to a polymer package substrate via reflow soldering of solder bumps, copper pillars, gold studs, or other suitable attachment method.
  • the plurality of first die can be provided in wafer form, instead of singulated die form, so that the wafer is attached to the package substrate.
  • the composite carrier comprises a package substrate including at least one (and generally a plurality of) embedded metal layer(s) having its bottom surface secured to a semiconductor wafer.
  • the package substrate can be a polymer substrate, such as an organic substrate.
  • the package substrate can also be a ceramic substrate or other substrate.
  • the package substrate can be a thin package substrate, such as an organic substrate that has a thickness of ⁇ 200 ⁇ m, such as about 100 to 200 ⁇ m.
  • the CTE of the composite carrier will be largely driven by the CTE of the semiconductor carrier wafer which is selected to match the CTE of the die. Accordingly, despite the CTE mismatch between the die and the package substrate, the package substrate will have little impact on ⁇ CTE driven warpage during assembly.
  • Step 102 comprises an optional overmolding step that can comprise overmolding with an appropriate material (e.g., mold compound, adhesive).
  • Step 103 comprises removing the semiconductor carrier wafer from the package substrate. Release methods can include thermal, solvent or laser aided methods.
  • Step 104 comprises attaching a plurality of electrically conductive connectors (e.g., a BGA) to the bottom surface of the package substrate.
  • Step 105 comprises sawing through the package substrate to form a plurality of singulated die packages.
  • FIG. 2 shows an exemplary method 200 for assembling stacked die packages, according to a disclosed embodiment.
  • Step 201 comprises attaching contacts on a first side of a plurality of first die to substrate pads on a top surface of a composite carrier.
  • the composite carrier comprises a package substrate including at least one embedded metal layer having its bottom surface secured to a semiconductor wafer.
  • step 201 comprises die attach and underfill of a plurality of singulated first die to a polymer package substrate via reflow soldering of solder bumps, copper pillars, gold studs, or other suitable attachment method.
  • the plurality of first die can be provided in wafer form so that the wafer is attached to the package substrate.
  • step 202 a plurality of singulated second die are attached to the first die to form a plurality of die stacks on the package substrate.
  • singulated second die are attached using soldering or copper bonding, and are then underfilled.
  • Step 203 comprises an optional overmolding step that can comprise overmolding with an appropriate material (e.g., mold compound, adhesive).
  • Step 204 comprises removing the semiconductor carrier wafer from the package substrate. As described above, release methods can include thermal, solvent or laser aided methods.
  • Step 205 comprises attaching a plurality of electrically conductive connectors (e.g., BGA) to the bottom surface of the package substrate.
  • Step 206 comprises sawing through the package substrate to form a plurality of singulated stacked die packages.
  • FIG. 3 shows an exemplary method 300 for assembling stacked die packages that include TSV die, according to a disclosed embodiment.
  • Step 301 comprises attaching a topside of a plurality of first TSV die having embedded TSVs including topside pads coupled to substrate pads on a top surface of a composite carrier.
  • step 301 comprises die attach and underfill singulated first TSV die to a polymer package substrate via reflow soldering of solder bumps, copper pillars, or other suitable attachment method.
  • the plurality of first TSV die can be provided in wafer form referred to herein as a TSV wafer.
  • step 302 the plurality of first TSV die are thinned to expose the TSVs to provide exposed bottomside TSV areas.
  • Methods for thinning can include backgrind, chemical mechanical polishing (CMP), and/or chemical etch.
  • Bottomside TSV contacts to the exposed TSV areas can then be formed.
  • Step 303 comprises attaching a plurality of singulated second die to the bottomside TSV contacts of the first TSV die to form a plurality of die stacks on the package substrate.
  • singulated second die are attached using soldering or copper bonding, and are then underfilled.
  • Step 304 comprises an optional overmolding step that can comprise overmolding with an appropriate material (e.g., mold compound, adhesive).
  • Step 305 comprises removing the semiconductor carrier wafer from the package substrate. As described above, release methods can include thermal, solvent or laser aided methods.
  • Step 306 comprises attaching a plurality of electrically conductive connectors (e.g., BGA) to the bottom surface of the package substrate.
  • Step 307 comprises sawing through the package substrate to form a plurality of singulated stacked die packages.
  • FIGS. 4A-G show successive cross sectional depictions that result from steps in the exemplary method described relative to FIG. 3 .
  • FIG. 4A is a cross sectional depiction following die attach and underfill of singulated TSV die (shown as TSV Die 1) to a multi-layer substrate 201 that is adhered to a semiconductor wafer 202 (e.g., a silicon wafer) that together constitute composite carrier 205 .
  • TSV die 1 are shown flip chip attached.
  • Topside pads 206 of TSV die 1 are shown coupled to substrate pads 207 on the package substrate 201 .
  • TSV Die 1 are generally at least 500 ⁇ m thick.
  • FIG. 4B is a cross sectional depiction showing an electronic assembly 400 following thinning of the bottomside of the TSV Die 1 to form a thinned TSV die 410 by an appropriate method, such as backgrind, CMP, and/or substrate (e.g., a silicon) etch to expose embedded TSVs 215 .
  • the thinned TSV die 1 are generally ⁇ 150 ⁇ m thick, typically 20 to 80 ⁇ m thick.
  • TSV contact pads 211 e.g. copper pads
  • At least a portion of the TSVs 215 are coupled to the topside pads 206 .
  • FIG. 1 is a cross sectional depiction showing an electronic assembly 400 following thinning of the bottomside of the TSV Die 1 to form a thinned TSV die 410 by an appropriate method, such as backgrind, CMP, and/or substrate (e.g., a silicon) etch to expose embedded TSVs 215 .
  • the thinned TSV die 1 are generally
  • FIG. 4C is a cross sectional depiction showing an electronic assembly 450 following die attach and underfill of singulated 2 nd die (shown as Die 2) to thinned TSV die 410 via a suitable method such as soldering, or copper bonding.
  • FIG. 4D is a cross sectional depiction following overmolding with an appropriate material 425 such as mold compound or an adhesive.
  • FIG. 4E is a cross sectional depiction following removal of the semiconductor wafer 202 from bottom of the polymer package substrate 201 .
  • Die 2 is a memory die and TSV Die 1 is a processor die. Although not shown, additional die may be stacked on Die 2.
  • FIG. 4F is a cross sectional depiction following attaching of BGA package solder balls 218 to the package substrate 201 .
  • FIG. 4G is a cross sectional depiction following sawing through the overmold 425 and package substrate 201 to singulate the stacked die packages.
  • the composite carrier has been described above as comprising a package substrate on a semiconductor wafer
  • the package substrate can comprise entirely the semiconductor (e.g., silicon, to match the semiconductor die) to achieve the same controlled warpage during the assembly process.
  • the active circuitry formed on the top semiconductor surface comprises circuit elements that generally include transistors, diodes, capacitors, and resistors, as well as signal lines and other electrical conductors that interconnect these various circuit elements.
  • Disclosed embodiments can be integrated into a variety of process flows to form a variety of devices and related products.
  • the semiconductor substrates may include various elements therein and/or layers thereon. These can include barrier layers, other dielectric layers, device structures, active elements and passive elements including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, etc.
  • disclosed embodiments can be used in a variety of processes including bipolar, CMOS, BiCMOS and MEMS.

Abstract

An electronic assembly includes a composite carrier. The composite carrier includes a package substrate including at least one embedded metal layer having its bottom surface secured to a semiconductor wafer. The composite carrier minimizes effects of the CTE mismatch between the die and the package substrate during assembly reduces warpage of the die. A plurality of first die having a thickness having their topside contacts attached to topside substrate pads on a top surface of said package substrate.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is a Divisional of and claims priority to U.S. patent application Ser. No. 13/625,932, filed on Sep. 25, 2012, which is a Divisional of and claims priority to U.S. patent application Ser. No. 12/770,058, filed on Apr. 29, 2010. Said applications herein incorporated by reference.
    • FIELD
  • Disclosed embodiments relate to integrated circuit (IC) packaging, and more particularly to die assembly.
    • BACKGROUND
  • As known in the art, “die bonding” or “die attach” describes the operation of attaching semiconductor die either to a package substrate or to some other substrate such as tape carrier for tape automated bonding. The die is first picked from a separated wafer or waffle tray, aligned to a target pad on the carrier or substrate, and then permanently attached, usually by a solder or epoxy bond.
  • Die attach temperatures during assembly of IC die is generally performed at a temperature of least 150° C., and can be performed at temperatures of 375° C. or more for eutectic die attach. Assembly of very thin die (<100 μm thick, e.g., 20 to 80 μm) to some package substrates, such as organic substrates, is known to be difficult due to the warpage of the die caused by the large coefficient of thermal expansion (CTE) mismatch between the die and the package substrate. For example, in the case of a silicon die, the CTE of the die may be about 3 ppm/° C., and the CTE of the organic substrate may be about 20 ppm/° C. or higher. This problem can be further aggravated by thin package substrates (e.g., about 100-200 μm thick) that may lack of rigidity over temperature.
  • Even minimal die warpage can cause alignment and resulting die attach problems in the case of small area and/or dense die contacts. Misaligned joints reduces contact area that increases contact resistance of the joints, and can even cause open circuited contacts. For example, contacts associated with through substrate vias (TSVs; referred to herein as through silicon vias in the particular case of a silicon substrate) can be very small in area. Similarly, if other contact structures such as pillars (e.g., copper pillars) or studs (e.g., gold studs) become small enough and/or dense enough, warpage can become a significant problem. Warpage is also especially problematic for die stacks when one of the die has contacts on both sides, for example, involving flip chip package substrate connections on one side of the die and small area TSV connections on the other side of the die.
  • One known method for addressing the above described warpage problem is using low CTE package substrates that provide improved CTE matching relative to the die. For example, ceramic substrates and some specialized polymer substrates may provide improved CTE matching with the die. However, low CTE package substrates are generally significantly more expensive as compared to conventional epoxy-glass resin-based (e.g., BT resin) organic substrates. What is needed is new packaging methodology for minimizing warpage and resulting effects of the CTE mismatch between the die and package substrate during assembly to allow use of conventional polymer substrates.
    • SUMMARY
  • Disclosed embodiments describe new packaging methodology for minimizing effects of CTE mismatch between the die and the package substrate during assembly that notably allows use of low cost conventional polymer substrates while providing reduced warpage of the die. A composite carrier comprising a package substrate including at least one embedded metal layer that has its bottom surface secured to a semiconductor wafer controls the CTE mismatch between the die and the substrate. The Inventor has recognized that the CTE of the composite carrier will be largely driven by the CTE of the semiconductor carrier wafer which is selected to match the CTE of the die so that despite the CTE mismatch between the die and the package substrate, the package substrate will have little impact on ΔCTE driven warpage during assembly. In one embodiment, the die and the wafer carrier can both comprise silicon.
  • The package substrate is generally a polymer substrate, such as an organic substrate. In a typical embodiment, the package substrate has a TCE that is at least is 10 ppm/° C. different (typically being higher) as compared to the CTE of the die.
  • The composite carrier can be provided prior to the start of the assembly process. Die attach processing is performed on the package substrate while the semiconductor wafer is attached thereto that acts as a carrier wafer. The semiconductor wafer may be removed later in the assembly flow after all die attachment is complete at which time the need for flat die surfaces is no longer generally important. Following removal of the carrier wafer, a plurality of electrically conductive connectors (e.g., a BGA) can then be attached to the bottom surface of the package substrate. Sawing through the package substrate forms a plurality of die packages.
  • Disclosed embodiments include assembly of single die packages and stacked die packages that include two or more stacked die. The die can include TSV die.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows an exemplary method for assembling die packages, according to a disclosed embodiment.
  • FIG. 2 shows an exemplary method for assembling stacked die packages, according to a disclosed embodiment.
  • FIG. 3 shows an exemplary method for assembling stacked die packages that include TSV die, according to a disclosed embodiment.
  • FIGS. 4A-G show successive cross sectional depictions that result from steps in the exemplary method described relative to FIG. 3.
    •  DETAILED DESCRIPTION
  • Disclosed embodiments in this Disclosure are described with reference to the attached figures, wherein like reference numerals are used throughout the figures to designate similar or equivalent elements. The figures are not drawn to scale and they are provided merely to illustrate the disclosed embodiments. Several aspects are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide a full understanding of the disclosed embodiments. One having ordinary skill in the relevant art, however, will readily recognize that the subject matter disclosed herein can be practiced without one or more of the specific details or with other methods. In other instances, well-known structures or operations are not shown in detail to avoid obscuring structures or operations that are not well-known. This Disclosure is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with this Disclosure.
  • Notwithstanding that the numerical ranges and parameters setting forth the broad scope of this Disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Moreover, all ranges disclosed herein are to be understood to encompass any and all sub-ranges subsumed therein. For example, a range of “less than 10” can include any and all sub-ranges between (and including) the minimum value of zero and the maximum value of 10, that is, any and all sub-ranges having a minimum value of equal to or greater than zero and a maximum value of equal to or less than 10, e.g., 1 to 5.
  • FIG. 1 shows an exemplary method 100 for assembling die packages, according to a disclosed embodiment. Step 101 comprises attaching contacts that are on a first side of a plurality of first die to substrate pads on a top surface of a composite carrier. The first die may be attached face down (i.e., flip chip) or face (i.e., circuit side) up (e.g., for later wire bonding, or using TSV die). The CTE difference between the die (e.g., about 3 ppm/° C. for a silicon die) and the package substrate is generally at least 10 ppm/° C. In a typical embodiment step 101 comprises die attach and underfill of a plurality of singulated die to a polymer package substrate via reflow soldering of solder bumps, copper pillars, gold studs, or other suitable attachment method. The plurality of first die can be provided in wafer form, instead of singulated die form, so that the wafer is attached to the package substrate.
  • The composite carrier comprises a package substrate including at least one (and generally a plurality of) embedded metal layer(s) having its bottom surface secured to a semiconductor wafer. The package substrate can be a polymer substrate, such as an organic substrate. The package substrate can also be a ceramic substrate or other substrate. The package substrate can be a thin package substrate, such as an organic substrate that has a thickness of <200 μm, such as about 100 to 200 μm. As noted above, the CTE of the composite carrier will be largely driven by the CTE of the semiconductor carrier wafer which is selected to match the CTE of the die. Accordingly, despite the CTE mismatch between the die and the package substrate, the package substrate will have little impact on ΔCTE driven warpage during assembly.
  • Step 102 comprises an optional overmolding step that can comprise overmolding with an appropriate material (e.g., mold compound, adhesive). Step 103 comprises removing the semiconductor carrier wafer from the package substrate. Release methods can include thermal, solvent or laser aided methods. Step 104 comprises attaching a plurality of electrically conductive connectors (e.g., a BGA) to the bottom surface of the package substrate. Step 105 comprises sawing through the package substrate to form a plurality of singulated die packages.
  • FIG. 2 shows an exemplary method 200 for assembling stacked die packages, according to a disclosed embodiment. Step 201 comprises attaching contacts on a first side of a plurality of first die to substrate pads on a top surface of a composite carrier. The composite carrier comprises a package substrate including at least one embedded metal layer having its bottom surface secured to a semiconductor wafer. In a typical embodiment, step 201 comprises die attach and underfill of a plurality of singulated first die to a polymer package substrate via reflow soldering of solder bumps, copper pillars, gold studs, or other suitable attachment method. As described above, the plurality of first die can be provided in wafer form so that the wafer is attached to the package substrate.
  • In step 202 a plurality of singulated second die are attached to the first die to form a plurality of die stacks on the package substrate. In a typical embodiment singulated second die are attached using soldering or copper bonding, and are then underfilled.
  • Step 203 comprises an optional overmolding step that can comprise overmolding with an appropriate material (e.g., mold compound, adhesive). Step 204 comprises removing the semiconductor carrier wafer from the package substrate. As described above, release methods can include thermal, solvent or laser aided methods. Step 205 comprises attaching a plurality of electrically conductive connectors (e.g., BGA) to the bottom surface of the package substrate. Step 206 comprises sawing through the package substrate to form a plurality of singulated stacked die packages.
  • FIG. 3 shows an exemplary method 300 for assembling stacked die packages that include TSV die, according to a disclosed embodiment. Step 301 comprises attaching a topside of a plurality of first TSV die having embedded TSVs including topside pads coupled to substrate pads on a top surface of a composite carrier. In a typical embodiment step 301 comprises die attach and underfill singulated first TSV die to a polymer package substrate via reflow soldering of solder bumps, copper pillars, or other suitable attachment method. The plurality of first TSV die can be provided in wafer form referred to herein as a TSV wafer.
  • In step 302 the plurality of first TSV die are thinned to expose the TSVs to provide exposed bottomside TSV areas. Methods for thinning can include backgrind, chemical mechanical polishing (CMP), and/or chemical etch. Bottomside TSV contacts to the exposed TSV areas can then be formed. Step 303 comprises attaching a plurality of singulated second die to the bottomside TSV contacts of the first TSV die to form a plurality of die stacks on the package substrate. In a typical embodiment singulated second die are attached using soldering or copper bonding, and are then underfilled.
  • Step 304 comprises an optional overmolding step that can comprise overmolding with an appropriate material (e.g., mold compound, adhesive). Step 305 comprises removing the semiconductor carrier wafer from the package substrate. As described above, release methods can include thermal, solvent or laser aided methods. Step 306 comprises attaching a plurality of electrically conductive connectors (e.g., BGA) to the bottom surface of the package substrate. Step 307 comprises sawing through the package substrate to form a plurality of singulated stacked die packages.
  • FIGS. 4A-G show successive cross sectional depictions that result from steps in the exemplary method described relative to FIG. 3. FIG. 4A is a cross sectional depiction following die attach and underfill of singulated TSV die (shown as TSV Die 1) to a multi-layer substrate 201 that is adhered to a semiconductor wafer 202 (e.g., a silicon wafer) that together constitute composite carrier 205. TSV die 1 are shown flip chip attached. Topside pads 206 of TSV die 1 are shown coupled to substrate pads 207 on the package substrate 201. TSV Die 1 are generally at least 500 μm thick.
  • FIG. 4B is a cross sectional depiction showing an electronic assembly 400 following thinning of the bottomside of the TSV Die 1 to form a thinned TSV die 410 by an appropriate method, such as backgrind, CMP, and/or substrate (e.g., a silicon) etch to expose embedded TSVs 215. The thinned TSV die 1 are generally <150 μm thick, typically 20 to 80 μm thick. TSV contact pads 211 (e.g. copper pads) are shown on the exposed portion of TSVs 215. At least a portion of the TSVs 215 are coupled to the topside pads 206. FIG. 4C is a cross sectional depiction showing an electronic assembly 450 following die attach and underfill of singulated 2nd die (shown as Die 2) to thinned TSV die 410 via a suitable method such as soldering, or copper bonding. FIG. 4D is a cross sectional depiction following overmolding with an appropriate material 425 such as mold compound or an adhesive. FIG. 4E is a cross sectional depiction following removal of the semiconductor wafer 202 from bottom of the polymer package substrate 201. In one embodiment Die 2 is a memory die and TSV Die 1 is a processor die. Although not shown, additional die may be stacked on Die 2.
  • FIG. 4F is a cross sectional depiction following attaching of BGA package solder balls 218 to the package substrate 201. FIG. 4G is a cross sectional depiction following sawing through the overmold 425 and package substrate 201 to singulate the stacked die packages.
  • Although the composite carrier has been described above as comprising a package substrate on a semiconductor wafer, the package substrate can comprise entirely the semiconductor (e.g., silicon, to match the semiconductor die) to achieve the same controlled warpage during the assembly process.
  • The active circuitry formed on the top semiconductor surface comprises circuit elements that generally include transistors, diodes, capacitors, and resistors, as well as signal lines and other electrical conductors that interconnect these various circuit elements.
  • Disclosed embodiments can be integrated into a variety of process flows to form a variety of devices and related products. The semiconductor substrates may include various elements therein and/or layers thereon. These can include barrier layers, other dielectric layers, device structures, active elements and passive elements including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, etc. Moreover, disclosed embodiments can be used in a variety of processes including bipolar, CMOS, BiCMOS and MEMS.
  • While various disclosed embodiments have been described above, it should be understood that they have been presented by way of example only, and not limitation. Numerous changes to the subject matter disclosed herein can be made in accordance with this Disclosure without departing from the spirit or scope of this Disclosure. In addition, while a particular feature may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application.
  • Thus, the breadth and scope of the subject matter provided in this Disclosure should not be limited by any of the above explicitly described embodiments. Rather, the scope of this Disclosure should be defined in accordance with the following claims and their equivalents.
  • The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, to the extent that the terms “including,” “includes,” “having,” “has,” “with,” or variants thereof are used in either the detailed description and/or the claims, such terms are intended to be inclusive in a manner similar to the term “comprising.”
  • Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of the invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Claims (7)

I claim:
1-30. (canceled)
31. An electronic assembly, comprising:
a composite carrier comprising an organic package substrate including at least one embedded metal layer having its bottom surface secured to a semiconductor wafer, and
a plurality of first die having having their topside contacts attached to topside substrate pads on a top surface of said package substrate.
32. The electronic assembly of claim 31, wherein said plurality of first die comprise through substrate via (TSV) die that include TSVs that have said topside contacts coupled to said TSVs attached to topside substrate pads of said package substrate.
33. The electronic assembly of claim 31, further comprising a plurality of singulated second die attached to bottomside contacts that are coupled to said TSVs.
34. The electronic assembly of claim 31, wherein said semiconductor wafer comprises a silicon wafer.
35. The electronic assembly of claim 31, wherein said plurality of first die are disposed on a first wafer.
36. The electronic assembly of claim 31, wherein said plurality of first die have a thickness of 20 to 100 μm having.
US14/202,082 2010-04-29 2014-03-10 Electronic assembly includes a composite carrier Abandoned US20140183719A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9892970B2 (en) 2016-06-02 2018-02-13 Globalfoundries Inc. Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same
US9929085B2 (en) 2016-06-02 2018-03-27 Globalfoundries Inc. Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same
US10815121B2 (en) 2016-07-12 2020-10-27 Hewlett-Packard Development Company, L.P. Composite wafers

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227295B2 (en) * 2008-10-16 2012-07-24 Texas Instruments Incorporated IC die having TSV and wafer level underfill and stacked IC devices comprising a workpiece solder connected to the TSV
US9048233B2 (en) 2010-05-26 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package systems having interposers
US8786066B2 (en) * 2010-09-24 2014-07-22 Intel Corporation Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same
US8796075B2 (en) * 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
US9443783B2 (en) * 2012-06-27 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC stacking device and method of manufacture
US10153179B2 (en) 2012-08-24 2018-12-11 Taiwan Semiconductor Manufacturing Company Carrier warpage control for three dimensional integrated circuit (3DIC) stacking
KR20140110334A (en) * 2013-03-07 2014-09-17 삼성전자주식회사 Semiconductor package and method for fabricating the same
JP2014179419A (en) * 2013-03-14 2014-09-25 Alpha- Design Kk Method for bonding electronic component
US8901748B2 (en) * 2013-03-14 2014-12-02 Intel Corporation Direct external interconnect for embedded interconnect bridge package
US20150014852A1 (en) * 2013-07-12 2015-01-15 Yueli Liu Package assembly configurations for multiple dies and associated techniques
KR102649471B1 (en) 2016-09-05 2024-03-21 삼성전자주식회사 Semiconductor package and method of fabricating the same
US9966363B1 (en) * 2017-02-03 2018-05-08 Nanya Technology Corporation Semiconductor apparatus and method for preparing the same
US10396003B2 (en) * 2017-10-18 2019-08-27 Micron Technology, Inc. Stress tuned stiffeners for micro electronics package warpage control
US10548230B2 (en) * 2018-01-04 2020-01-28 Micron Technology, Inc. Method for stress reduction in semiconductor package via carrier
US20190259675A1 (en) * 2018-02-19 2019-08-22 Didrew Technology (Bvi) Limited Glass frame fan out packaging and method of manufacturing thereof
US10692793B2 (en) * 2018-03-02 2020-06-23 Micron Technology, Inc. Electronic device with a package-level thermal regulator mechanism and associated systems, devices, and methods
CN110634806A (en) * 2018-06-21 2019-12-31 美光科技公司 Semiconductor device assembly and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090339A1 (en) * 2008-09-12 2010-04-15 Kumar Ananda H Structures and Methods for Wafer Packages, and Probes
US20110169159A1 (en) * 2010-01-13 2011-07-14 Chia-Sheng Lin Chip package and fabrication method thereof
US20110195546A1 (en) * 2008-09-25 2011-08-11 King Dragon International Inc. Stacking package structure with chip embedded inside and die having through silicon via and method of the same
US8237257B2 (en) * 2008-09-25 2012-08-07 King Dragon International Inc. Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294407B1 (en) * 1998-05-06 2001-09-25 Virtual Integration, Inc. Microelectronic packages including thin film decal and dielectric adhesive layer having conductive vias therein, and methods of fabricating the same
US6008070A (en) * 1998-05-21 1999-12-28 Micron Technology, Inc. Wafer level fabrication and assembly of chip scale packages
US6627998B1 (en) * 2000-07-27 2003-09-30 International Business Machines Corporation Wafer scale thin film package
US6506681B2 (en) * 2000-12-06 2003-01-14 Micron Technology, Inc. Thin flip—chip method
US6879492B2 (en) * 2001-03-28 2005-04-12 International Business Machines Corporation Hyperbga buildup laminate
JP2003092375A (en) * 2001-09-19 2003-03-28 Matsushita Electric Ind Co Ltd Semiconductor device and method of manufacturing the same, and method of testing the same
JP3831287B2 (en) * 2002-04-08 2006-10-11 株式会社日立製作所 Manufacturing method of semiconductor device
KR100555505B1 (en) * 2003-07-09 2006-03-03 삼성전자주식회사 Method for fabrication interconnection contact to obtain expanded bottom opening in contact hole by deposition and removal of silicide layer
TWI245381B (en) * 2003-08-14 2005-12-11 Via Tech Inc Electrical package and process thereof
JP4527991B2 (en) * 2004-01-28 2010-08-18 株式会社日立製作所 Multi-chip module manufacturing method
TWI254425B (en) * 2004-10-26 2006-05-01 Advanced Semiconductor Eng Chip package structure, chip packaging process, chip carrier and manufacturing process thereof
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP4790297B2 (en) * 2005-04-06 2011-10-12 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
KR100688560B1 (en) * 2005-07-22 2007-03-02 삼성전자주식회사 Wafer level chip scale package and manufacturing method thereof
JP5065586B2 (en) * 2005-10-18 2012-11-07 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
DE102005053842B4 (en) * 2005-11-09 2008-02-07 Infineon Technologies Ag Semiconductor device with connecting elements and method for producing the same
SG133445A1 (en) * 2005-12-29 2007-07-30 Micron Technology Inc Methods for packaging microelectronic devices and microelectronic devices formed using such methods
JP4390775B2 (en) * 2006-02-08 2009-12-24 Ｏｋｉセミコンダクタ株式会社 Manufacturing method of semiconductor package
US7473577B2 (en) 2006-08-11 2009-01-06 International Business Machines Corporation Integrated chip carrier with compliant interconnect
US7846776B2 (en) * 2006-08-17 2010-12-07 Micron Technology, Inc. Methods for releasably attaching sacrificial support members to microfeature workpieces and microfeature devices formed using such methods
TWI316749B (en) * 2006-11-17 2009-11-01 Siliconware Precision Industries Co Ltd Semiconductor package and fabrication method thereof
US7605477B2 (en) 2007-01-25 2009-10-20 Raytheon Company Stacked integrated circuit assembly
US20080188037A1 (en) 2007-02-05 2008-08-07 Bridge Semiconductor Corporation Method of manufacturing semiconductor chip assembly with sacrificial metal-based core carrier
US8012857B2 (en) * 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
TWI375321B (en) * 2007-08-24 2012-10-21 Xintec Inc Electronic device wafer level scale packages and fabrication methods thereof
JP2009117767A (en) * 2007-11-09 2009-05-28 Shinko Electric Ind Co Ltd Manufacturing method of semiconductor device, and semiconductor device manufacture by same
US7863092B1 (en) * 2008-09-30 2011-01-04 Xilinx, Inc. Low cost bumping and bonding method for stacked die
KR101698805B1 (en) * 2010-03-23 2017-02-02 삼성전자주식회사 method for wafer level package and semiconductor device used the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100090339A1 (en) * 2008-09-12 2010-04-15 Kumar Ananda H Structures and Methods for Wafer Packages, and Probes
US20110195546A1 (en) * 2008-09-25 2011-08-11 King Dragon International Inc. Stacking package structure with chip embedded inside and die having through silicon via and method of the same
US8237257B2 (en) * 2008-09-25 2012-08-07 King Dragon International Inc. Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same
US20110169159A1 (en) * 2010-01-13 2011-07-14 Chia-Sheng Lin Chip package and fabrication method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9892970B2 (en) 2016-06-02 2018-02-13 Globalfoundries Inc. Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same
US9929085B2 (en) 2016-06-02 2018-03-27 Globalfoundries Inc. Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same
US9966310B1 (en) 2016-06-02 2018-05-08 Globalfoundries Inc. Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same
US10815121B2 (en) 2016-07-12 2020-10-27 Hewlett-Packard Development Company, L.P. Composite wafers

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CN102844861B (en) 2016-01-13
JP2013526066A (en) 2013-06-20
US20110266693A1 (en) 2011-11-03
WO2011139875A2 (en) 2011-11-10
US8298863B2 (en) 2012-10-30
US20130029457A1 (en) 2013-01-31

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