US20140167030A1 - Vertical type semiconductor device and fabrication method thereof - Google Patents

Vertical type semiconductor device and fabrication method thereof Download PDF

Info

Publication number
US20140167030A1
US20140167030A1 US13/846,293 US201313846293A US2014167030A1 US 20140167030 A1 US20140167030 A1 US 20140167030A1 US 201313846293 A US201313846293 A US 201313846293A US 2014167030 A1 US2014167030 A1 US 2014167030A1
Authority
US
United States
Prior art keywords
forming
semiconductor substrate
insulating layer
layer
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/846,293
Inventor
Nam Kyun PARK
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
SK Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Hynix Inc filed Critical SK Hynix Inc
Assigned to SK Hynix Inc. reassignment SK Hynix Inc. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PARK, NAM KYUN
Priority to US14/278,070 priority Critical patent/US9159740B2/en
Publication of US20140167030A1 publication Critical patent/US20140167030A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/18—Selenium or tellurium only, apart from doping materials or other impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices

Definitions

  • Various embodiments generally relates to a vertical type semiconductor device, and more particularly, to a vertical type semiconductor device and a method of fabricating the same.
  • the distribution rate of portable digital devices has been increasing day by day and ultra-high integration, ultra-high speed, and ultra-low power of memory devices, which are embedded in a limited size to process large capacity of data with high speed, have been required.
  • the resistance memory devices are devices which select a memory cell through an access device, change a resistance state of a data storage material electrically connected to the access device, and store data.
  • PCRAMs phase-change random access memories
  • ReRAMs resistance RAMs
  • MRAMs magnetoresistive RAMs
  • Diodes or transistors may be employed as the access device of the resistive memory devices.
  • the threshold voltage of the transistors is controlled to be low as compared with the diodes and thus the operation voltage thereof can be reduced, and the transistors have received attention again as the access device of the resistance memory devices by applying the vertical structure thereto.
  • transistors in the related art are formed in a horizontal structure, the reduction rate is restricted.
  • the vertical transistors can sufficiently ensure current drivability in the limited channel area. Further, voltage drop due to an external resistance component may be improved through reduction in a source resistance.
  • a vertical structure transistor is formed by etching a semiconductor substrate in a cell area and a horizontal structure transistor is formed in the semiconductor substrate in a peripheral area. Therefore, desired degree of integration may not be obtained in a subsequent process due to a step between the cell area and the peripheral area. Further, there is a need for an alternative to compensate current drivability of the transistor lower than the diode.
  • An exemplary vertical type semiconductor device may include a common source region formed in a cell area of a semiconductor substrate; a channel region formed on the common source region, the channel region having a predetermined height and a first diameter; a drain region formed on the channel region, the drain region having a predetermined height and a second diameter larger than the first diameter; and a first gate electrode surrounding the channel region.
  • a method of fabricating an exemplary vertical type semiconductor device may include providing a semiconductor substrate having a cell area and a peripheral area; patterning the semiconductor substrate of the cell area to form a pillar structure; forming, in the pillar structure, a recess from a bottom of the pillar structure to a predetermined height; and forming a first gate electrode to surround the recess.
  • FIGS. 1 to 18 are views illustrating a method of fabricating an exemplary vertical type semiconductor device.
  • FIG. 1 is a cross-sectional view of a vertical type semiconductor device in a first direction (an X-direction, a A 1 -A 2 direction of (c) in each drawing), for example, a word line direction
  • (b) is a cross-sectional view of the vertical type semiconductor device in a s direction (a Y-direction, a B 1 -B 2 direction of (c) in each drawing), for example, a bit line direction
  • (c) is a plan view of the vertical type semiconductor device
  • (p) is a cross-sectional view of a peripheral area of a vertical type semiconductor device.
  • Exemplary implementations are described herein with reference to cross-sectional illustrations that are schematic illustrations of exemplary implementations (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary implementations should not be construed as limited to the particular shapes of regions illustrated herein but may be to include deviations in shapes that result, for example, from manufacturing. In the drawings, lengths and sizes of layers and regions may be exaggerated for clarity. Like reference numerals in the drawings denote like elements. It is also understood that when a layer is referred to as being “on another layer or substrate, it can be directly on the other or substrate, or intervening layers may also be present.
  • FIGS. 1 to 18 are views illustrating a method of fabricating an exemplary vertical semiconductor device.
  • a hard mask 105 is formed on a semiconductor substrate 101 .
  • a cell area and a peripheral area are defined by a device isolation layer 103 and active regions in the peripheral area are defined by the device isolation layer 103 .
  • an ion implantation process is selectively performed only the cell area to sequentially form a drain region, a channel region, and a common source region in the semiconductor substrate 101 fiducially a surface of the semiconductor substrate 101 .
  • the ion implantation process may be performed in a subsequent process.
  • the semiconductor substrate 101 may include a semiconductor material, such as silicon (Si), silicon germanium (SiGe) or gallium arsenic (GaAs) and may have a single-layered structure or a multiple-layered structure.
  • a semiconductor material such as silicon (Si), silicon germanium (SiGe) or gallium arsenic (GaAs) and may have a single-layered structure or a multiple-layered structure.
  • the semiconductor substrate 101 of the cell area is patterned in a second direction (a Y-direction) to form a first pattern structure.
  • the reference numeral 101 A in FIG. 2 denotes a common source region and 105 denotes a hard mask.
  • the common source region 101 A has been described as being previously formed, alternatively, the common source region 101 A may be formed in a subsequent process.
  • a first insulating layer 107 and a second insulating layer 109 are sequentially formed between first pattern structures in the cell area and then planarized to expose a surface of the hard mask 105 .
  • the first insulating layer 107 and the second insulating layer 109 may include a combination of materials having different etch selectivities with respect to each other.
  • the first insulating layer 107 may be formed of an oxide and the second insulating layer 109 may be formed of a nitride, which has a higher etch selectivity than the oxide.
  • the first insulating layer 107 formation region may be replaced with a gate electrode region in a subsequent process.
  • a height of the first insulating layer 107 may be based on a desired channel height.
  • a patterning process is performed on the semiconductor substrate in a first direction (an X-direction) to form a second pattern structure as illustrated in FIG. 4 . Accordingly, surface of the semiconductor substrate 101 of space between the second pattern structures are exposed.
  • a third insulating layer 113 is formed between second pattern structures from the semiconductor substrate 101 to a predetermined height.
  • the third insulating layer 113 may be replaced with a gate electrode in a subsequent process.
  • a height of the third insulating layer 113 may be equal to a height of the first insulating layer 107 .
  • the third insulating layer 113 may be formed of a material having the same etch characteristic as that of the first insulating layer 107 .
  • the third insulating layer 113 may be formed of an oxide.
  • a protection material is formed on the semiconductor substrate, including the third insulating layer 113 , and is then etched back to form a protection layer 115 on a sidewall of the second pattern structure.
  • the protection layer 115 may formed, for example, using a nitride and may protect the sidewall of the second pattern structure to prevent the semiconductor substrate 101 from being recessed in a subsequent process.
  • FIG. 6 illustrates a state after forming the protection layer 115 .
  • a surface of the semiconductor substrate is covered with the hard mask 105
  • the sidewall of the second pattern structure is covered with the protection layer 115
  • a surface of the third insulating layer 113 is exposed. Therefore, the third insulating layer 113 and the first insulating layer 107 may be removed through the exposed surface of the third insulating layer 113 .
  • FIG. 7 illustrates a state in which the first and third insulating layers 107 and 113 are removed.
  • a pillar structure is formed by the removal of the first and third insulating layers 107 and 113 .
  • a surface, exposed by the removal of the first and third insulating layers 107 and 113 , of the semiconductor substrate 101 is recessed to a predetermined depth.
  • the semiconductor substrate 101 may be recessed using an isotropic wet etching process.
  • the recessed portion of the semiconductor substrate becomes a gate electrode formation region 200 - 1 .
  • a diameter S 1 of a portion of the semiconductor substrate 101 around the gate electrode formation region 200 - 1 is made smaller than a diameter S 2 of an upper portion of the semiconductor substrate 101 .
  • the portion of the semiconductor substrate 101 having the diameter S 1 may be formed, in a subsequent process, into a channel region.
  • the upper portion of the semiconductor substrate 101 having the diameter S 2 may be formed, in a subsequent process, into a drain region. Since the diameter S 2 of the drain region is larger than the diameter S 1 of the channel region as illustrated in FIG. 8 , an external resistance component may be reduced and the gate electrode may be more easily controlled.
  • a second gate insulating layer 117 is formed on the exposed portion of the semiconductor substrate 101 in the gate electrode formation region 200 - 1 .
  • the second gage insulating layer 117 may include a single layer or multiple layers using oxide of Si, tantalum (Ta), titanium (Ta), barium titanium (BaTi), barium zirconium (BaZr), zirconium (Zr), hafnium (Hf), lanthanum (La), aluminum (Al), yttrium (Y), or zirconium silicon (ZrSi).
  • the second gage insulating layer 117 may include a single layer or multiple layers using a nitride of Si, Ta, Ti, BaTi, BaZr, Zr, Hf, La, Al, Y, or ZrSi.
  • an electrode material 119 is formed to inside of the gate electrode formation region 200 - 1 .
  • the electrode material 119 may be a metal, a metal alloy, a metal oxynitride, or a conductive carbon compound.
  • the electrode material 119 may be tungsten (W), copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), molybdenum nitride (MoN), niobium nitride (NbN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), titanium boron nitride (TiBN), zirconium silicon nitride (ZrSiN), tungsten silicon nitride (WSiN), tungsten boron nitride (WBN), zirconium aluminum nitride (ZrAlN), moly
  • the buried electrode material 119 is selectively removed through an exposed surface of the electrode material 119 between the second pattern structures, so that the remaining electrode material 119 surrounds a sidewall of the semiconductor substrate 101 around the gate electrode formation region 200 - 1 .
  • a portion of the semiconductor substrate 101 surrounded by the electrode material 119 serves as a channel region CH.
  • the semiconductor substrate 101 is recessed to reduce a diameter of the channel region.
  • a drain region D over the channel region may be formed to have a larger diameter than the channel region (CH).
  • an external resistance component for the drain region may be reduced.
  • FIG. 12 illustrates a state in which a fourth insulating layer 121 is buried between pillar structures to separate cells. It can be seen from FIG. 12 that the electrode material 119 surrounds the channel region CH.
  • a process for forming a transistor in the peripheral area is performed.
  • the hard mask 105 is removed and a third gate oxide layer 123 and a first conductive layer 125 are sequentially formed on the semiconductor substrate including the cell area and a peripheral area ( FIG. 13 c ).
  • the reference numeral 300 denotes a bottom structure of the cell area formed by the processes illustrated in FIGS. 1 to 12 .
  • the ion implantation process for forming the drain region, the channel region, and the common source region may be performed on the semiconductor substrate 101 of the cell area to form the common source region, the channel region, and the drain region after the hard mask 105 of the cell area is removed.
  • the transistor may be an NMOS type, a PMOS type, or an impact-ionization MOS (I-MOS) type, based on a conductivity type of an impurity implanted to each region.
  • the transistor may be an NMOS type.
  • N-type ions may be implanted into the common source region 101 A and the drain region D, and P-type ions may be implanted into the channel region CH.
  • P-type ions may be implanted into the common source region 101 A and the drain region D, and N-type ions may be implanted into the channel region CH.
  • N + -type ions may be implanted into the common source region 101 A
  • P + -type ions may be implanted into the drain region D
  • P ⁇ type ions, N ⁇ -type ions, or a combination thereof may be implanted into the channel region CH.
  • P + -type ions may be implanted into the common source region 101 A
  • N + -type ions may be implanted into the drain region D
  • P ⁇ -type ions, N ⁇ -type ions, or a combination thereof may be implanted into the channel region CH.
  • a memory cell which is connected to a vertical transistor having the surround structure and formed in the bottom structure 300 of the cell area and serves as a data storage unit, is to be formed, as illustrated in FIG. 14 , the first conductive material 125 and the third gate oxide layer 123 in the cell area are removed.
  • a second conductive layer 127 , a barrier metal layer 129 , a third conductive layer 131 , and a hard mask 133 are sequentially formed on the semiconductor substrate, including the cell area and the peripheral area.
  • the second conductive layer 127 , the barrier metal layer 129 , and the third conductive layer 131 serve as a lower electrode in the cell area.
  • the first conductive layer, 125 , the second conductive layer 127 , the barrier metal layer 129 , and the third conductive layer 131 serve as a gate electrode of the transistor in the peripheral area.
  • Each of the first conductive layer 125 , the second conductive layer 127 , and the third conductive layer 131 may be formed of W, Cu, TiN, TaN, WN, MoN, NbN, TiSiN, TiAlN, TiBN, ZrSiN, WSiN, WBN, ZrAlN, MoSiN, MoAlN, TaSiN, TaAlN, Ti, Mo, Ta, TiSi, TaSi, TiW, TiON, TiAlON, WON, TaON, or a semiconductor material, such as doped-Si or doped-SiGe, or the like.
  • the hard mask 133 , the third conductive layer 131 , the barrier metal layer 129 , and the second conductive layer 127 are patterned to expose an upper surface of the fourth insulating layer 121 formed in the cell area.
  • a lower electrode stack is formed.
  • a fifth insulating layer 135 is formed between lower electrode stacks.
  • the hard mask 133 , the third conductive layer 131 , the barrier metal layer 129 , the second conductive layer 127 , the first conductive layer 125 , and the third gate oxide layer 123 in the peripheral area are patterned to form a gate stack G.
  • a contact 137 which contacts the semiconductor substrate 101 in the peripheral area, is formed and a sixth insulating layer 139 is formed on the semiconductor substrate of the entire peripheral area, including the contact 137 .
  • the sixth insulating layer 139 serves to protect a pattern formed in the peripheral area when the hard mask 133 in the cell area is removed in a subsequent process.
  • FIG. 18 illustrates only the cell area and illustrates a bottom structure 300 , in which a vertical transistor is formed.
  • the lower electrode stack 127 , 129 , and 131 is formed on the bottom structure 300 .
  • a data storage material 143 is electrically connected to the lower electrode stack 127 , 129 , and 131 , and an wiring layer 145 is formed.
  • the hard mask 133 in the cell area is removed and a space is formed between adjacent fifth insulating layers 135 .
  • a spacer insulating layer 141 is formed on a sidewall of the fifth insulating layer 135 , a data storage material 143 is buried within the space, and the wiring layer 145 is formed on the semiconductor substrate, including the data storage material 143 , so that the structure illustrated in FIG. 18 may be formed.
  • the data storage material 143 may include a material for a PCRAM, a material for a ReRAM, a material for a spin-transfer torque magnetoresistive RAM (STTMRAM), and a material for a polymer RAM (PoRAM).
  • the data storage material may be tellurium (Te), selenium (Se), germanium (Ge), antimony (Sb), bismuth (Bi), lead (Pb), tin (Sn), arsenic (As), sulfur (S), silicon (Si), phosphorus (P), oxygen (O), nitrogen (N), a compound thereof, or an alloy thereof.
  • the method of forming the data storage material illustrated in FIG. 18 is illustrative and any one of applicable various methods may be used.
  • the common source region 101 A is formed through the ion implantation process is merely illustrative.
  • an wiring layer of a line pattern may be formed as the common source region 101 A.
  • an exemplary vertical type semiconductor device may be formed in a stacked structure, such as a multilevel stack structure.
  • an exemplary semiconductor device may have the cell structures illustrated in FIG. 18 , in which the cell structures are sequentially, symmetrically stacked in a mirror type on the basis of the wiring layer, or in which the cell structures are symmetrically stacked in a mirror type on the basis of the common source region.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

A vertical memory device and a method of fabricating the same are provided. The vertical type semiconductor device includes a common source region formed in a cell area of a semiconductor substrate. A channel region is formed on the common source region. The channel region has a predetermined height and a first diameter. A drain region is formed on the channel region. The drain region has a predetermined height and a second diameter larger than the first diameter. A first gate electrode surrounding the channel region.

Description

    CROSS-REFERENCES TO RELATED APPLICATION
  • This application claims priority under 35 U.S.C. 119(a) to Korean application number 10-2012-0146381, filed on Dec. 14, 2012, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.
    • BACKGROUND
  • 1. Technical Field
  • Various embodiments generally relates to a vertical type semiconductor device, and more particularly, to a vertical type semiconductor device and a method of fabricating the same.
  • 2. Related Art
  • The distribution rate of portable digital devices has been increasing day by day and ultra-high integration, ultra-high speed, and ultra-low power of memory devices, which are embedded in a limited size to process large capacity of data with high speed, have been required.
  • Studies on vertical memory devices have been actively progressed to meet these demands. Recently, the vertical structures are introduced into resistance memory devices which are spotlighted as next-generation memory devices.
  • The resistance memory devices are devices which select a memory cell through an access device, change a resistance state of a data storage material electrically connected to the access device, and store data. There are typically phase-change random access memories (PCRAMs), resistance RAMs (ReRAMs), magnetoresistive RAMs (MRAMs), and the like as the resistance memory devices.
  • Diodes or transistors may be employed as the access device of the resistive memory devices. In particular, the threshold voltage of the transistors is controlled to be low as compared with the diodes and thus the operation voltage thereof can be reduced, and the transistors have received attention again as the access device of the resistance memory devices by applying the vertical structure thereto.
  • That is, since the voltage of 1.1 V or more has to be applied to the diodes, there is a limitation to reduce an operation voltage of the diodes. Further, when the diodes are formed on a word line, a resistance of the word line is varied according to locations in the cells to cause word line to be bounced.
  • Since transistors in the related art are formed in a horizontal structure, the reduction rate is restricted. However, the vertical transistors can sufficiently ensure current drivability in the limited channel area. Further, voltage drop due to an external resistance component may be improved through reduction in a source resistance.
  • However, when a current vertical structure transistor is formed, a vertical structure transistor is formed by etching a semiconductor substrate in a cell area and a horizontal structure transistor is formed in the semiconductor substrate in a peripheral area. Therefore, desired degree of integration may not be obtained in a subsequent process due to a step between the cell area and the peripheral area. Further, there is a need for an alternative to compensate current drivability of the transistor lower than the diode.
    • SUMMARY
  • An exemplary vertical type semiconductor device may include a common source region formed in a cell area of a semiconductor substrate; a channel region formed on the common source region, the channel region having a predetermined height and a first diameter; a drain region formed on the channel region, the drain region having a predetermined height and a second diameter larger than the first diameter; and a first gate electrode surrounding the channel region.
  • A method of fabricating an exemplary vertical type semiconductor device may include providing a semiconductor substrate having a cell area and a peripheral area; patterning the semiconductor substrate of the cell area to form a pillar structure; forming, in the pillar structure, a recess from a bottom of the pillar structure to a predetermined height; and forming a first gate electrode to surround the recess.
  • These and other features, aspects, and implementations are described below in the section entitled “DETAILED DESCRIPTION”.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other aspects, features and other advantages of the subject matter of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIGS. 1 to 18 are views illustrating a method of fabricating an exemplary vertical type semiconductor device.
    •  DETAILED DESCRIPTION
  • Hereinafter, exemplary implementations will be described in greater detail with reference to the accompanying drawings. In drawings, (a) is a cross-sectional view of a vertical type semiconductor device in a first direction (an X-direction, a A1-A2 direction of (c) in each drawing), for example, a word line direction, (b) is a cross-sectional view of the vertical type semiconductor device in a s direction (a Y-direction, a B1-B2 direction of (c) in each drawing), for example, a bit line direction, (c) is a plan view of the vertical type semiconductor device, and (p) is a cross-sectional view of a peripheral area of a vertical type semiconductor device.
  • Exemplary implementations are described herein with reference to cross-sectional illustrations that are schematic illustrations of exemplary implementations (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary implementations should not be construed as limited to the particular shapes of regions illustrated herein but may be to include deviations in shapes that result, for example, from manufacturing. In the drawings, lengths and sizes of layers and regions may be exaggerated for clarity. Like reference numerals in the drawings denote like elements. It is also understood that when a layer is referred to as being “on another layer or substrate, it can be directly on the other or substrate, or intervening layers may also be present.
  • FIGS. 1 to 18 are views illustrating a method of fabricating an exemplary vertical semiconductor device.
  • Referring to FIG. 1, a hard mask 105 is formed on a semiconductor substrate 101. A cell area and a peripheral area are defined by a device isolation layer 103 and active regions in the peripheral area are defined by the device isolation layer 103. At this time, an ion implantation process is selectively performed only the cell area to sequentially form a drain region, a channel region, and a common source region in the semiconductor substrate 101 fiducially a surface of the semiconductor substrate 101. The ion implantation process may be performed in a subsequent process.
  • The semiconductor substrate 101 may include a semiconductor material, such as silicon (Si), silicon germanium (SiGe) or gallium arsenic (GaAs) and may have a single-layered structure or a multiple-layered structure.
  • As illustrated in FIG. 2, the semiconductor substrate 101 of the cell area is patterned in a second direction (a Y-direction) to form a first pattern structure. The reference numeral 101A in FIG. 2 denotes a common source region and 105 denotes a hard mask. Although the common source region 101A has been described as being previously formed, alternatively, the common source region 101A may be formed in a subsequent process.
  • As illustrated in FIG. 3, a first insulating layer 107 and a second insulating layer 109 are sequentially formed between first pattern structures in the cell area and then planarized to expose a surface of the hard mask 105. Here, the first insulating layer 107 and the second insulating layer 109 may include a combination of materials having different etch selectivities with respect to each other. For example, the first insulating layer 107 may be formed of an oxide and the second insulating layer 109 may be formed of a nitride, which has a higher etch selectivity than the oxide.
  • The first insulating layer 107 formation region may be replaced with a gate electrode region in a subsequent process. Thus, a height of the first insulating layer 107 may be based on a desired channel height.
  • After the first and second insulating layers 107 and 109 are formed between the first pattern structures, a patterning process is performed on the semiconductor substrate in a first direction (an X-direction) to form a second pattern structure as illustrated in FIG. 4. Accordingly, surface of the semiconductor substrate 101 of space between the second pattern structures are exposed.
  • After the second pattern structure is formed, as illustrated in FIG. 5, an oxidation process is performed on the exposed surface of the semiconductor substrate 101 to form a first gate insulating layer 111. A third insulating layer 113 is formed between second pattern structures from the semiconductor substrate 101 to a predetermined height. The third insulating layer 113 may be replaced with a gate electrode in a subsequent process. Thus, a height of the third insulating layer 113 may be equal to a height of the first insulating layer 107. Further, the third insulating layer 113 may be formed of a material having the same etch characteristic as that of the first insulating layer 107. For example, the third insulating layer 113 may be formed of an oxide.
  • As illustrated in FIG. 6, a protection material is formed on the semiconductor substrate, including the third insulating layer 113, and is then etched back to form a protection layer 115 on a sidewall of the second pattern structure. The protection layer 115 may formed, for example, using a nitride and may protect the sidewall of the second pattern structure to prevent the semiconductor substrate 101 from being recessed in a subsequent process.
  • FIG. 6 illustrates a state after forming the protection layer 115. A surface of the semiconductor substrate is covered with the hard mask 105, the sidewall of the second pattern structure is covered with the protection layer 115, and a surface of the third insulating layer 113 is exposed. Therefore, the third insulating layer 113 and the first insulating layer 107 may be removed through the exposed surface of the third insulating layer 113.
  • FIG. 7 illustrates a state in which the first and third insulating layers 107 and 113 are removed. A pillar structure is formed by the removal of the first and third insulating layers 107 and 113.
  • As illustrated in FIG. 8, a surface, exposed by the removal of the first and third insulating layers 107 and 113, of the semiconductor substrate 101 is recessed to a predetermined depth. The semiconductor substrate 101 may be recessed using an isotropic wet etching process. The recessed portion of the semiconductor substrate becomes a gate electrode formation region 200-1.
  • By recessing the semiconductor substrate 101, a diameter S1 of a portion of the semiconductor substrate 101 around the gate electrode formation region 200-1 is made smaller than a diameter S2 of an upper portion of the semiconductor substrate 101. The portion of the semiconductor substrate 101 having the diameter S1 may be formed, in a subsequent process, into a channel region. The upper portion of the semiconductor substrate 101 having the diameter S2 may be formed, in a subsequent process, into a drain region. Since the diameter S2 of the drain region is larger than the diameter S1 of the channel region as illustrated in FIG. 8, an external resistance component may be reduced and the gate electrode may be more easily controlled.
  • As illustrated in FIG. 9, a second gate insulating layer 117 is formed on the exposed portion of the semiconductor substrate 101 in the gate electrode formation region 200-1. The second gage insulating layer 117 may include a single layer or multiple layers using oxide of Si, tantalum (Ta), titanium (Ta), barium titanium (BaTi), barium zirconium (BaZr), zirconium (Zr), hafnium (Hf), lanthanum (La), aluminum (Al), yttrium (Y), or zirconium silicon (ZrSi). Alternatively, the second gage insulating layer 117 may include a single layer or multiple layers using a nitride of Si, Ta, Ti, BaTi, BaZr, Zr, Hf, La, Al, Y, or ZrSi.
  • As illustrated in FIG. 10, an electrode material 119 is formed to inside of the gate electrode formation region 200-1. The electrode material 119 may be a metal, a metal alloy, a metal oxynitride, or a conductive carbon compound. For example, the electrode material 119 may be tungsten (W), copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), molybdenum nitride (MoN), niobium nitride (NbN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), titanium boron nitride (TiBN), zirconium silicon nitride (ZrSiN), tungsten silicon nitride (WSiN), tungsten boron nitride (WBN), zirconium aluminum nitride (ZrAlN), molybdenum silicon nitride (MoSiN), molybdenum aluminum nitride (MoAlN), tantalum silicon nitride (TaSiN), tantalum aluminum nitride (TaAlN), titanium Ti), molybdenum (Mo), tantalum (Ta), titanium silicide (TiSi), tantalum silicide (TaSi), titanium tungsten (TiW), titanium oxynitride (TiON), titanium aluminum oxynitride (TiAlON), tungsten oxynitride (WON), or tantalum oxynitride (TaON). Alternatively, the electrode material 119 may include a semiconductor material, such as doped-Si and doped-SiGe, or the like.
  • As illustrated in FIG. 11, the buried electrode material 119 is selectively removed through an exposed surface of the electrode material 119 between the second pattern structures, so that the remaining electrode material 119 surrounds a sidewall of the semiconductor substrate 101 around the gate electrode formation region 200-1. As a result, a portion of the semiconductor substrate 101 surrounded by the electrode material 119 serves as a channel region CH. As described in FIG. 8, the semiconductor substrate 101 is recessed to reduce a diameter of the channel region. Thus, a drain region D over the channel region may be formed to have a larger diameter than the channel region (CH). Thus, an external resistance component for the drain region may be reduced.
  • FIG. 12 illustrates a state in which a fourth insulating layer 121 is buried between pillar structures to separate cells. It can be seen from FIG. 12 that the electrode material 119 surrounds the channel region CH.
  • Subsequently, a process for forming a transistor in the peripheral area is performed. First, as illustrated in FIG. 13, the hard mask 105 is removed and a third gate oxide layer 123 and a first conductive layer 125 are sequentially formed on the semiconductor substrate including the cell area and a peripheral area (FIG. 13 c). The reference numeral 300 denotes a bottom structure of the cell area formed by the processes illustrated in FIGS. 1 to 12.
  • Alternatively, if the ion implantation process for forming the drain region, the channel region, and the common source region is not performed after the device isolation process in FIG. 1, the ion implantation process may be performed on the semiconductor substrate 101 of the cell area to form the common source region, the channel region, and the drain region after the hard mask 105 of the cell area is removed.
  • Even if the common source region, the channel region, and the drain region are formed in any process among the above-described processes, the transistor may be an NMOS type, a PMOS type, or an impact-ionization MOS (I-MOS) type, based on a conductivity type of an impurity implanted to each region. In particular, the transistor may be an NMOS type.
  • If the NMOS transistor is formed, then N-type ions may be implanted into the common source region 101A and the drain region D, and P-type ions may be implanted into the channel region CH. If the PMOS transistor is formed, then P-type ions may be implanted into the common source region 101A and the drain region D, and N-type ions may be implanted into the channel region CH.
  • On the other hand, if an I-MOS transistor is formed, N+-type ions may be implanted into the common source region 101A, P+-type ions may be implanted into the drain region D, and P− type ions, N−-type ions, or a combination thereof may be implanted into the channel region CH. Alternatively, P+-type ions may be implanted into the common source region 101A, N+-type ions may be implanted into the drain region D, and P−-type ions, N−-type ions, or a combination thereof may be implanted into the channel region CH.
  • Since a memory cell, which is connected to a vertical transistor having the surround structure and formed in the bottom structure 300 of the cell area and serves as a data storage unit, is to be formed, as illustrated in FIG. 14, the first conductive material 125 and the third gate oxide layer 123 in the cell area are removed. A second conductive layer 127, a barrier metal layer 129, a third conductive layer 131, and a hard mask 133 are sequentially formed on the semiconductor substrate, including the cell area and the peripheral area.
  • Here, the second conductive layer 127, the barrier metal layer 129, and the third conductive layer 131 serve as a lower electrode in the cell area. The first conductive layer, 125, the second conductive layer 127, the barrier metal layer 129, and the third conductive layer 131 serve as a gate electrode of the transistor in the peripheral area.
  • Each of the first conductive layer 125, the second conductive layer 127, and the third conductive layer 131 may be formed of W, Cu, TiN, TaN, WN, MoN, NbN, TiSiN, TiAlN, TiBN, ZrSiN, WSiN, WBN, ZrAlN, MoSiN, MoAlN, TaSiN, TaAlN, Ti, Mo, Ta, TiSi, TaSi, TiW, TiON, TiAlON, WON, TaON, or a semiconductor material, such as doped-Si or doped-SiGe, or the like.
  • As illustrated in FIG. 15, in the cell area, the hard mask 133, the third conductive layer 131, the barrier metal layer 129, and the second conductive layer 127 are patterned to expose an upper surface of the fourth insulating layer 121 formed in the cell area. Thus, a lower electrode stack is formed. A fifth insulating layer 135 is formed between lower electrode stacks.
  • As illustrated in FIG. 16, the hard mask 133, the third conductive layer 131, the barrier metal layer 129, the second conductive layer 127, the first conductive layer 125, and the third gate oxide layer 123 in the peripheral area are patterned to form a gate stack G.
  • As illustrated in FIG. 17, a contact 137, which contacts the semiconductor substrate 101 in the peripheral area, is formed and a sixth insulating layer 139 is formed on the semiconductor substrate of the entire peripheral area, including the contact 137. The sixth insulating layer 139 serves to protect a pattern formed in the peripheral area when the hard mask 133 in the cell area is removed in a subsequent process.
  • FIG. 18 illustrates only the cell area and illustrates a bottom structure 300, in which a vertical transistor is formed. The lower electrode stack 127, 129, and 131 is formed on the bottom structure 300. A data storage material 143 is electrically connected to the lower electrode stack 127, 129, and 131, and an wiring layer 145 is formed.
  • Specifically, after the process illustrated in FIG. 17 is performed, the hard mask 133 in the cell area is removed and a space is formed between adjacent fifth insulating layers 135. A spacer insulating layer 141 is formed on a sidewall of the fifth insulating layer 135, a data storage material 143 is buried within the space, and the wiring layer 145 is formed on the semiconductor substrate, including the data storage material 143, so that the structure illustrated in FIG. 18 may be formed.
  • The data storage material 143 may include a material for a PCRAM, a material for a ReRAM, a material for a spin-transfer torque magnetoresistive RAM (STTMRAM), and a material for a polymer RAM (PoRAM). For example, if the vertical memory device is a PCRAM, then the data storage material may be tellurium (Te), selenium (Se), germanium (Ge), antimony (Sb), bismuth (Bi), lead (Pb), tin (Sn), arsenic (As), sulfur (S), silicon (Si), phosphorus (P), oxygen (O), nitrogen (N), a compound thereof, or an alloy thereof.
  • The method of forming the data storage material illustrated in FIG. 18 is illustrative and any one of applicable various methods may be used.
  • The example in which the common source region 101A is formed through the ion implantation process is merely illustrative. Alternatively, an wiring layer of a line pattern may be formed as the common source region 101A.
  • The example of forming the vertical type semiconductor device in a single layer has been illustrated. However, an exemplary vertical type semiconductor device may be formed in a stacked structure, such as a multilevel stack structure. Alternatively, an exemplary semiconductor device may have the cell structures illustrated in FIG. 18, in which the cell structures are sequentially, symmetrically stacked in a mirror type on the basis of the wiring layer, or in which the cell structures are symmetrically stacked in a mirror type on the basis of the common source region.
  • The above implementation is illustrative and not limiting. Various alternatives and equivalents are possible. The invention is not limited by the implementation described herein. Nor is the invention limited to any specific type of semiconductor device. Other additions, subtractions, or modifications are obvious in view of the present disclosure and are intended to fall within the scope of the appended claims.

Claims (22)

What is claimed is:
1. A vertical type semiconductor device, comprising:
a common source region formed in a cell area of a semiconductor substrate;
a channel region formed on the common source region, the channel region having a predetermined height and a first diameter;
a drain region formed on the channel region, the drain region having a predetermined height and a second diameter larger than the first diameter; and
a first gate electrode surrounding the channel region.
2. The vertical type semiconductor device of claim 1, further comprising:
a memory cell formed on the drain region.
3. The vertical type semiconductor device of claim 2, wherein the memory cell includes a phase-change random access memory (PCRAM), a resistance RAM (ReRAM), a spin-transfer torque magnetoresistive RAM (STTMRAM), or a polymer RAM (PoRAM).
4. The vertical type semiconductor device of claim 1, further comprising:
a lower electrode formed on the drain region.
5. The vertical type semiconductor device of claim 4, further comprising a second gate electrode formed on a peripheral area of the semiconductor substrate,
wherein the second gate electrode is simultaneously formed with the lower electrode of the cell area.
6. The vertical type semiconductor device of claim 4, further comprising:
a data storage material formed on the lower electrode.
7. The vertical type semiconductor device of claim 6, wherein the data storage material includes tellurium (Te), selenium (Se), germanium (Ge), antimony (Sb), bismuth (Bi), lead (Pb), tin (Sn), arsenic (As), sulfur (5), silicon (Si), phosphorus (P), oxygen (O), nitrogen (N), a compound thereof, or an alloy thereof.
8. A method of fabricating a vertical type semiconductor device, the method comprising:
providing a semiconductor substrate having a cell area and a peripheral area;
patterning the semiconductor substrate of the cell area to form a pillar structure;
forming, in the pillar structure, a recess from a bottom of the pillar structure to a predetermined height; and
forming a first gate electrode to surround the recess.
9. The method of claim 8, wherein the forming the pillar structure includes:
patterning the semiconductor substrate of the cell area in to form first pattern structures;
forming, on the semiconductor substrate between the first pattern structures, a first insulating layer to the predetermined height;
forming, between the first pattern structures, a second insulating layer on the first insulating layer;
patterning the semiconductor substrate of the cell area to form a second pattern structure;
forming a first gate insulating layer on an exposed surface of the semiconductor substrate;
forming, between the second pattern structures, a third insulating layer to the predetermined height;
forming a protection layer on a sidewall of the second pattern structure and on the third insulating layer; and
removing the first insulating layer and the third insulating layer.
10. The method of claim 9, wherein the first insulating layer includes a material having an etch selectivity that is different than an etch selectivity of the second insulating layer.
11. The method of claim 9, wherein the first insulating layer includes a material having a same etch selectivity as an etch selectivity of the second insulating layer.
12. The method of claim 8, further comprising:
forming a common source region, a channel region, and a drain region in the semiconductor substrate before the forming the pillar structure.
13. The method of claim 12, wherein forming a channel region comprises:
forming a channel region from a bottom of the pillar structure to the predetermined height.
14. The method of claim 8, further comprising:
forming a common source region, a channel region, and a drain region in semiconductor substrate after the forming a first gate electrode.
15. The method of claim 14, wherein forming a channel region comprises:
forming a channel region from a bottom of the pillar structure to the predetermined height.
16. The method of claim 8, further comprising:
forming a gate insulating layer on an exposed portion of the semiconductor substrate and the recess, before the forming a first gate electrode in the recess.
17. The method of claim 8, further comprising:
forming an insulating layer between the pillar structures, after the forming a first gate electrode.
18. The method of claim 8, further comprising:
simultaneously forming an electrode layer on the pillar structure of the cell area and forming a second gate electrode on the semiconductor substrate of the peripheral area, after the forming a first gate electrode.
19. The method of claim 18, wherein the forming an electrode layer and a second gate electrode comprises:
sequentially forming a gate oxide layer and a first conductive layer on the cell area and the peripheral area;
removing the gate oxide layer and the first conductive layer in the cell area;
forming a second conductive layer on the cell area and the peripheral area;
patterning, in the cell area, the second conductive layer to form an electrode layer electrically connected to each of the pillar structures; and
patterning, in the peripheral area, the second conductive layer, the first conductive layer, and the gate oxide layer to form the second gate electrode.
20. The method of claim 19, further comprising:
forming a data storage material on the electrode layer.
21. The method of claim 8, further comprising:
forming a memory cell on each of the pillar structures.
22. The method of claim 21, wherein the forming a memory cell includes:
simultaneously forming an electrode layer on each of the pillar structures of the cell area to be electrically connected to each of the pillar structures and a second gate electrode on the semiconductor substrate of the peripheral area; and
forming a data storage material on the electrode layer.
US13/846,293 2012-12-14 2013-03-18 Vertical type semiconductor device and fabrication method thereof Abandoned US20140167030A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/278,070 US9159740B2 (en) 2012-12-14 2014-05-15 Vertical type semiconductor device and fabrication method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120146381A KR20140077500A (en) 2012-12-14 2012-12-14 Vertical Type Semiconductor Device and Fabrication Method Thereof
KR10-2012-0146381 2012-12-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/278,070 Division US9159740B2 (en) 2012-12-14 2014-05-15 Vertical type semiconductor device and fabrication method thereof

Publications (1)

Publication Number Publication Date
US20140167030A1 true US20140167030A1 (en) 2014-06-19

Family

ID=50910479

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/846,293 Abandoned US20140167030A1 (en) 2012-12-14 2013-03-18 Vertical type semiconductor device and fabrication method thereof
US14/278,070 Active US9159740B2 (en) 2012-12-14 2014-05-15 Vertical type semiconductor device and fabrication method thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/278,070 Active US9159740B2 (en) 2012-12-14 2014-05-15 Vertical type semiconductor device and fabrication method thereof

Country Status (3)

Country Link
US (2) US20140167030A1 (en)
KR (1) KR20140077500A (en)
CN (1) CN103872128B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10283565B1 (en) * 2017-12-21 2019-05-07 International Business Machines Corporation Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
WO2024036826A1 (en) * 2022-08-18 2024-02-22 北京超弦存储器研究院 Vertical transistor, storage unit and manufacturing method therefor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698151B2 (en) * 2015-10-08 2017-07-04 Samsung Electronics Co., Ltd. Vertical memory devices
KR102537248B1 (en) 2016-07-06 2023-05-30 삼성전자주식회사 Three-Dimensional Semiconductor Memory Device
KR102630954B1 (en) * 2016-11-08 2024-01-31 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method thereof
KR102303302B1 (en) * 2017-04-28 2021-09-16 삼성전자주식회사 Method for fabricating Semiconductor device
US10840298B1 (en) * 2019-06-28 2020-11-17 Spin Memory, Inc. Vertical selector STT-MRAM architecture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6599798B2 (en) * 2001-07-24 2003-07-29 Infineon Technologies Ag Method of preparing buried LOCOS collar in trench DRAMS
KR100675285B1 (en) * 2005-10-10 2007-01-29 삼성전자주식회사 Semiconductor device having vertical transistor and method of fabricating the same
US7935598B2 (en) * 2007-12-24 2011-05-03 Hynix Semiconductor Inc. Vertical channel transistor and method of fabricating the same
US20120168858A1 (en) * 2010-12-30 2012-07-05 Hynix Semiconductor Inc. Non-volatile memory device and method of fabricating the same
US9673102B2 (en) * 2011-04-01 2017-06-06 Micron Technology, Inc. Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10283565B1 (en) * 2017-12-21 2019-05-07 International Business Machines Corporation Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
US10522594B2 (en) 2017-12-21 2019-12-31 International Business Machines Corporation Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
WO2024036826A1 (en) * 2022-08-18 2024-02-22 北京超弦存储器研究院 Vertical transistor, storage unit and manufacturing method therefor

Also Published As

Publication number Publication date
US20140248750A1 (en) 2014-09-04
US9159740B2 (en) 2015-10-13
CN103872128A (en) 2014-06-18
CN103872128B (en) 2018-01-23
KR20140077500A (en) 2014-06-24

Similar Documents

Publication Publication Date Title
US8890110B2 (en) Vertical memory device and method of fabricating the same
US9159740B2 (en) Vertical type semiconductor device and fabrication method thereof
CN107123734B (en) Variable resistance memory device
US9659999B2 (en) 3-dimensional stack memory device
US8901009B2 (en) Methods of manufacturing semiconductor devices
US9620566B2 (en) Variable resistance memory device with shunt gate connected to corresponding gate
US9245588B2 (en) Stack type semiconductor memory device
US9391269B2 (en) Variable resistance memory devices
US9608041B2 (en) Semiconductor memory device and method of manufacturing the same
US20150340610A1 (en) Variable resistance memory devices and methods of manufacturing the same
US9018610B2 (en) Resistive memory device and method of manufacturing the same
JP2009021602A (en) Method of forming phase change memory device having bottom electrode
US9118003B2 (en) Variable resistance memory devices and method of forming the same
US8592790B2 (en) Phase-change random access memory device and method of manufacturing the same
US20090008622A1 (en) Phase Change Memory Devices and Methods of Fabricating the Same
US20140131655A1 (en) Semiconductor memory devices and methods of fabricating the same
US9960082B2 (en) Stack type semiconductor memory device
KR20130142522A (en) Vertical type memory device and fabrication method thereof

Legal Events

Date Code Title Description
AS Assignment

Owner name: SK HYNIX INC., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PARK, NAM KYUN;REEL/FRAME:030034/0546

Effective date: 20130316

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION