US20140098287A1 - Structure and manufacturing method for high resolution camera module - Google Patents
Structure and manufacturing method for high resolution camera module Download PDFInfo
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- US20140098287A1 US20140098287A1 US13/796,622 US201313796622A US2014098287A1 US 20140098287 A1 US20140098287 A1 US 20140098287A1 US 201313796622 A US201313796622 A US 201313796622A US 2014098287 A1 US2014098287 A1 US 2014098287A1
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- Prior art keywords
- image sensor
- sensor chip
- optical cover
- adhesive
- dam
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- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 77
- 239000000919 ceramic Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 238000007689 inspection Methods 0.000 claims abstract description 7
- 239000000853 adhesive Substances 0.000 claims description 34
- 230000001070 adhesive effect Effects 0.000 claims description 34
- 239000011521 glass Substances 0.000 claims description 20
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 5
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H04N5/2253—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Definitions
- the present invention relates to a structure and a manufacturing method for a camera module. More particularly, the present invention relates to a structure and a manufacturing method for a high resolution camera module.
- FIG. 1 shows the structure of a conventional high-resolution camera module in cross-section
- FIG. 2 is the flowchart of a conventional method for making a high-resolution camera module.
- a conventional high-resolution camera module 10 includes: a ceramic substrate 11 , a glass cover 12 , an image sensor chip 13 , a packaging portion 14 , and a plurality of passive elements 15 .
- a method S 100 for making a high-resolution camera module includes the steps of: providing a ceramic substrate attached with a glass cover (step S 10 ), providing an image sensor chip onto the ceramic substrate by a flip-chip technique (step S 20 ), and packaging the image sensor chip along its periphery (step S 30 ).
- the ceramic substrate 11 provided in step S 10 is formed with a hollow portion and has a glass bonding surface 111 and a chip bonding surface 112 .
- the glass bonding surface 111 and the chip bonding surface 112 are the top surface and the bottom surface of the ceramic substrate 11 respectively.
- the glass cover 12 which is bonded to the glass bonding surface 111 , has an upper surface 121 and a lower surface 122 .
- the periphery of the lower surface 122 is bonded to the glass bonding surface 111 such that the glass cover 12 covers the hollow portion of the ceramic substrate 11 .
- step S 20 the periphery of an upper surface of the image sensor chip 13 is connected to the chip bonding surface 112 by a flip-chip technique while a sensing area of the image sensor chip 13 is aligned with the hollow portion of the ceramic substrate 11 , allowing external light to impinge on the sensing area through the glass cover 12 .
- the image sensor chip 13 is electrically connected to the ceramic substrate 11 by conductive elements 16 , e.g., solder balls.
- a cavity 17 is formed between the image sensor chip 13 , the glass cover 12 , and the ceramic substrate 11 .
- the height of the cavity 17 is at least greater than the thickness of the ceramic substrate 11 .
- the image sensor chip 13 may be a CMOS image sensor chip.
- step S 30 the periphery of the image sensor chip 13 and the joint between the image sensor chip 13 and the ceramic substrate 11 are sealed with a mold compound by an underfill technique or an epoxy dispensing technique.
- the cavity 17 is sealed, and the packaging portion 14 is formed.
- a plurality of passive elements 15 may be additionally provided on the glass bonding surface 111 and be electrically connected to the ceramic substrate 11 by the conductive elements 16 .
- the manufacturing method and structure described above have the following problems and limitations.
- the cavity 17 formed between the image sensor chip 13 , the glass cover 12 , and the ceramic substrate 11 is too large, which not only prevents the camera module from being effectively downsized, but also compromises the stability of temperature cycling tests.
- the present invention discloses a structure and a manufacturing method for a high-resolution camera module, wherein the method comprises the following steps: providing an image sensor wafer; performing inspection; disposing an optical cover; cutting the image sensor wafer; disposing an image sensor chip on a ceramic substrate; and forming a packaging portion.
- the present invention improves yield rate of a high-resolution camera module by sealing the high-resolution camera module during early stage of the manufacturing process, and downsizes the high-resolution camera module.
- the present invention provides a method for making a high-resolution camera module comprising the steps of: providing an image sensor wafer, wherein the image sensor wafer comprises a plurality of image sensor chips, each image sensor chip includes a first surface, a second surface, and a plurality of conductive contacts, wherein the first surface has a sensing area surrounded by the plurality of conductive contacts; performing an inspection to inspect and define if each image sensor chip is a good chip; disposing an optical cover on the first surface of the image sensor chip defined as the good chip, wherein the optical cover faces the sensing area and does not cover the conductive contacts, and the surface of the optical cover is smaller than the surface of the image sensor chip; cutting the image sensor wafer to obtain the discrete image sensor chip covered with the optical cover; disposing the image sensor chip on a ceramic substrate, wherein the ceramic substrate has a hollow portion, a bottom surface, and a top surface, a horizontal area of the hollow portion is larger than the surface of the optical cover, the first surface of the divided image sensor chip is adhered
- the present invention also provides a structure of a high-resolution camera module, comprising: a ceramic substrate having a hollow portion, a top surface, and a bottom surface; a image sensor chip having a first surface and a plurality of conductive contacts, wherein the first surface has a sensing area surrounded by the plurality of conductive contacts, and the first surface is disposed on the bottom surface, such that the image sensor chip is electrically connected to the ceramic substrate through the conductive contacts; an optical cover disposed on the first surface by an adhesive, wherein the adhesive is in the region between the sensing area and the conductive contacts, and the optical cover is smaller than the image sensor chip and faces the sensing area; and a packaging portion covering a periphery of the image sensor chip and connection between the image sensor chip and the ceramic substrate.
- FIG. 1 is a sectional view for a structure of a conventional high-resolution camera module
- FIG. 2 is a flowchart of a conventional method for making a high-resolution camera module
- FIG. 3 is a sectional view for a structure of a high-resolution camera module according to an embodiment of the present invention.
- FIG. 5 is a top view and a partial enlarged view for a wafer of a high-resolution camera module according to an embodiment of the present invention
- FIG. 6 is a flowchart of an epoxy dispensing method for disposing an optical cover according to an embodiment of the present invention
- FIG. 7A is a top view of region AA′ in FIG. 3 according to an embodiment of the present invention.
- FIG. 7B is another top view of region AA′ in FIG. 3 according to an embodiment of the present invention.
- FIG. 7C is still another top view of region AA′ in FIG. 3 according to an embodiment of the present invention.
- FIG. 8 is a flowchart of a dam forming method for disposing an optical cover according to an embodiment of the present invention.
- FIG. 9A is an isometric view of an optical cover combined with a dam according to an embodiment of the present invention.
- FIG. 10A is an isometric view of a darn according to an embodiment of the present invention.
- FIG. 10B is another isometric view of an optical cover combined with a dam according to an embodiment of the present invention.
- FIG. 10C is still another sectional view for a structure of a high-resolution camera module according to an embodiment of the present invention.
- a high-resolution camera module 20 includes: a ceramic substrate 21 , an optical cover 22 , an image sensor chip 23 , and a packaging portion 24 .
- a method S 200 for making a high-resolution camera module according to an embodiment of the present invention includes the steps of: providing an image sensor wafer (step S 210 ), performing inspection to define good chips (step S 220 ), disposing an optical cover onto each good chip (step S 230 ), cutting the image sensor wafer (step S 240 ), disposing each image sensor chip onto a ceramic substrate (step S 250 ), and forming a packaging portion (step S 260 ).
- step S 230 the step of disposing an optical cover onto each good chip.
- An optical cover 22 is provided onto the first surface 231 of each of the good chips 31 to keep the good chips 31 from particle contamination during the following packaging process (e.g., cutting process or connecting process).
- each optical cover 22 must be located right above the sensing area 233 .
- the optical cover 22 may be a glass cover allowing light to impinge on the sensing area 233 through the glass cover.
- the step of disposing an optical cover can be performed with the following two ways: the first one is epoxy dispensing and the second one is dam forming.
- the step of disposing an optical cover includes: applying an adhesive on the image sensor chip (step S 231 ) and disposing the optical cover onto the image sensor chip (step S 232 ).
- step S 232 the optical cover 22 is bonded to the image sensor chip 23 by the adhesive 281 .
- the adhesive 281 may be used in conjunction with ball spacers 282 .
- the adhesive 281 may be used in conjunction with ball spacers 282 , whose height prevents the flowing adhesive 281 from forming various heights and thereby prevents the optical cover 22 from tilting. Should the optical cover 22 tilt, the yield rate will be lowered.
- the adhesive 281 may be in a C shape pattern with an opening 283 . It prevents gas pressure inside the cavity 27 from varying due to rising temperature, and thereby prevents the optical cover 22 from tilting or the adhesive 281 from overflowing.
- the adhesive 281 may be in two L shape patterns. These L shape patterns may be disposed diagonally to form a square pattern with two openings 283 in two diagonal corners.
- the opening 283 formed among the adhesive 281 , the optical cover 22 and the image sensor chip 23 , may balance the gas pressure inside and outside the cavity 27 to prevent excessively high pressure inside the cavity 27 from pushing the optical cover 22 or the adhesive 281 and causing tilt of the optical cover 22 or overflow of the adhesive 281 .
- step S 234 the adhesive 281 is pre-applied to the first surface 231 of the image sensor chip 23 at positions approximately between the conductive contacts 26 and the sensing area 233 .
- the optical cover 22 on which the dam 29 has been formed is bonded to the image sensor chip 23 by adhering a bottom surface of the dam 29 with the adhesive 281 such that the optical cover 22 lies above the image sensor chip 23 .
- the adhesive 281 is also in a closed loop pattern to form and completely seal a cavity 27 among the optical cover 22 , the dam 29 and the image sensor chip 23 .
- a fixed height of the dam 29 ensures that the optical cover 22 is parallel to the image sensor chip 23 without tilting. Furthermore, a volume of the cavity 27 can be effectively reduced by controlling the fixed height of the dam 29 .
- the dam 29 can be made of any one of the following or a combination thereof: epoxy, silicone, liquid crystal polymer, molding compound, siloxane based polymer, photosensitive dry film, solder mask, glass, and ceramic.
- a depression 293 may be formed on an inside of the dam 29 . Because of the depression, a lower plane is formed inside an upper surface 291 of the dam 29 on the depression 293 , and stepwise level differences are formed longitudinally and transversely.
- a frame flange 292 may be formed on an outer peripheral edge of the upper surface 291 of the dam 29 , and a thickness for a portion of the frame flange 292 corresponding to the depression 293 may be smaller.
- a periphery of a lower surface of the optical cover 22 may be disposed on the interior of the upper surface 291 of the dam 29 , and the lateral side of the optical cover 22 connects the frame flange 292 .
- the lower plane on the depression 293 cannot contact the optical cover 22
- the thickness for the portion of the frame flange 292 corresponding to the depression 293 is smaller, it cannot tightly contact the periphery of the optical cover 22 .
- An opening 283 ′ with L shaped section is formed where the optical cover 22 , the frame flange 292 , and the dam 29 do not contact with each other.
- the opening 283 ′ may be used to circulate gas inside and outside the cavity 27 to balance gas pressure.
- step S 240 in the step of cutting the image sensor wafer (step S 240 ), at last, the image sensor wafer 30 is cut to obtain the discrete image sensor chip 23 covered with the optical cover 22 respectively.
- the divided image sensor chip 23 is then electrically connected to a ceramic substrate 21 by a flip-chip technique.
- the ceramic substrate 21 has a hollow portion 213 , a bottom surface 211 , and a top surface 212 , wherein the top surface 212 is an upper surface of the ceramic substrate 21 and the bottom surface 211 is a lower surface of the ceramic substrate 21 .
- a horizontal area of the hollow portion 213 is larger than the surface of the optical cover 22 such that the optical cover 22 can be accommodated in a space formed by the hollow portion 213 when the optical cover 22 is covered on the image sensor chip 23 .
- a mold compound or a liquid compound is used to fill a periphery of the image sensor chip 23 and connection between the image sensor chip 23 and the ceramic substrate 21 to form a packaging portion 24 .
- the packaging portion 24 covers the periphery of the image sensor chip 23 and the connection between the image sensor chip 23 and the ceramic substrate 21 to improve protection for the periphery of the image sensor chip 23 and prevent it from collision damages.
- the high-resolution camera module 20 may further include a plurality of passive elements 25 disposed on the top surface 212 of the ceramic substrate 21 .
- the passive elements 25 may be electrically connected to the image sensor chip 23 through the conductive contacts 26 .
- the optical covers 22 are respectively disposed on the image sensor chips 23 on the image sensor wafer 30 before the image sensor wafer 30 is cut, the image sensor chips 23 are protected from the very beginning to avoid contamination, allowing the yield rate and production efficiency of the high-resolution camera modules to be increased.
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
Description
- 1. Technical Field
- The present invention relates to a structure and a manufacturing method for a camera module. More particularly, the present invention relates to a structure and a manufacturing method for a high resolution camera module.
- 2. Description of Related Art
- The portability of mobile phones has brought increased efficiency and convenience to our daily lives. At the same time, continuous improvement in technology has provided mobile phones with more and more functions, including picture taking and video recording for example. In order to meet the requirement for using a high-resolution camera module having advantages of being light, compact, and suitable for mass-production in a mobile phone, the manufacturing process of such camera modules must be effectively simplified, and the module structure must be downsized.
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FIG. 1 shows the structure of a conventional high-resolution camera module in cross-section, andFIG. 2 is the flowchart of a conventional method for making a high-resolution camera module. Referring toFIG. 1 , a conventional high-resolution camera module 10 includes: aceramic substrate 11, aglass cover 12, animage sensor chip 13, apackaging portion 14, and a plurality ofpassive elements 15. As shown inFIG. 2 , a method S100 for making a high-resolution camera module includes the steps of: providing a ceramic substrate attached with a glass cover (step S10), providing an image sensor chip onto the ceramic substrate by a flip-chip technique (step S20), and packaging the image sensor chip along its periphery (step S30). - The
ceramic substrate 11 provided in step S10 is formed with a hollow portion and has aglass bonding surface 111 and achip bonding surface 112. Theglass bonding surface 111 and thechip bonding surface 112 are the top surface and the bottom surface of theceramic substrate 11 respectively. Theglass cover 12, which is bonded to theglass bonding surface 111, has anupper surface 121 and alower surface 122. The periphery of thelower surface 122 is bonded to theglass bonding surface 111 such that theglass cover 12 covers the hollow portion of theceramic substrate 11. - In step S20, the periphery of an upper surface of the
image sensor chip 13 is connected to thechip bonding surface 112 by a flip-chip technique while a sensing area of theimage sensor chip 13 is aligned with the hollow portion of theceramic substrate 11, allowing external light to impinge on the sensing area through theglass cover 12. Theimage sensor chip 13 is electrically connected to theceramic substrate 11 byconductive elements 16, e.g., solder balls. Thus, acavity 17 is formed between theimage sensor chip 13, theglass cover 12, and theceramic substrate 11. The height of thecavity 17 is at least greater than the thickness of theceramic substrate 11. Theimage sensor chip 13 may be a CMOS image sensor chip. - In step S30, the periphery of the
image sensor chip 13 and the joint between theimage sensor chip 13 and theceramic substrate 11 are sealed with a mold compound by an underfill technique or an epoxy dispensing technique. Thus, thecavity 17 is sealed, and thepackaging portion 14 is formed. A plurality ofpassive elements 15 may be additionally provided on theglass bonding surface 111 and be electrically connected to theceramic substrate 11 by theconductive elements 16. - Nevertheless, the manufacturing method and structure described above have the following problems and limitations. First of all, as the surface of the
image sensor chip 13 is not covered and protected by theglass cover 12 until a later stage of the manufacturing process, moisture or dust particles are likely to enter theimage sensor chip 13 during manufacture, resulting in a high fraction defective and consequently a low yield rate. Further, thecavity 17 formed between theimage sensor chip 13, theglass cover 12, and theceramic substrate 11 is too large, which not only prevents the camera module from being effectively downsized, but also compromises the stability of temperature cycling tests. - The present invention discloses a structure and a manufacturing method for a high-resolution camera module, wherein the method comprises the following steps: providing an image sensor wafer; performing inspection; disposing an optical cover; cutting the image sensor wafer; disposing an image sensor chip on a ceramic substrate; and forming a packaging portion. The present invention improves yield rate of a high-resolution camera module by sealing the high-resolution camera module during early stage of the manufacturing process, and downsizes the high-resolution camera module.
- The present invention provides a method for making a high-resolution camera module comprising the steps of: providing an image sensor wafer, wherein the image sensor wafer comprises a plurality of image sensor chips, each image sensor chip includes a first surface, a second surface, and a plurality of conductive contacts, wherein the first surface has a sensing area surrounded by the plurality of conductive contacts; performing an inspection to inspect and define if each image sensor chip is a good chip; disposing an optical cover on the first surface of the image sensor chip defined as the good chip, wherein the optical cover faces the sensing area and does not cover the conductive contacts, and the surface of the optical cover is smaller than the surface of the image sensor chip; cutting the image sensor wafer to obtain the discrete image sensor chip covered with the optical cover; disposing the image sensor chip on a ceramic substrate, wherein the ceramic substrate has a hollow portion, a bottom surface, and a top surface, a horizontal area of the hollow portion is larger than the surface of the optical cover, the first surface of the divided image sensor chip is adhered and disposed to the bottom surface and faces the hollow portion, and the conductive contacts of the image sensor chip is electrically connected to the ceramic substrate; and forming a packaging portion to cover a periphery of the image sensor chip and connection between the image sensor chip and the ceramic substrate.
- The present invention also provides a structure of a high-resolution camera module, comprising: a ceramic substrate having a hollow portion, a top surface, and a bottom surface; a image sensor chip having a first surface and a plurality of conductive contacts, wherein the first surface has a sensing area surrounded by the plurality of conductive contacts, and the first surface is disposed on the bottom surface, such that the image sensor chip is electrically connected to the ceramic substrate through the conductive contacts; an optical cover disposed on the first surface by an adhesive, wherein the adhesive is in the region between the sensing area and the conductive contacts, and the optical cover is smaller than the image sensor chip and faces the sensing area; and a packaging portion covering a periphery of the image sensor chip and connection between the image sensor chip and the ceramic substrate.
- At least the following improvements can be achieved with implementation of the present invention:
- 1. Improving yield rate of a high-resolution camera module by sealing the camera module during early stage of the manufacturing process; and
- 2. Downsizing the camera module effectively.
- The detailed features and advantages of the present invention will be described in detail with reference to the preferred embodiment so as to enable persons skilled in the art to gain insight into the technical disclosure of the present invention, implement the present invention accordingly, and readily understand the objectives and advantages of the present invention by perusal of the contents disclosed in the specification, the claims, and the accompanying drawings.
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FIG. 1 is a sectional view for a structure of a conventional high-resolution camera module; -
FIG. 2 is a flowchart of a conventional method for making a high-resolution camera module; -
FIG. 3 is a sectional view for a structure of a high-resolution camera module according to an embodiment of the present invention; -
FIG. 4 is a flowchart of a method for making a high-resolution camera module according to an embodiment of the present invention; -
FIG. 5 is a top view and a partial enlarged view for a wafer of a high-resolution camera module according to an embodiment of the present invention; -
FIG. 6 is a flowchart of an epoxy dispensing method for disposing an optical cover according to an embodiment of the present invention; -
FIG. 7A is a top view of region AA′ inFIG. 3 according to an embodiment of the present invention; -
FIG. 7B is another top view of region AA′ inFIG. 3 according to an embodiment of the present invention; -
FIG. 7C is still another top view of region AA′ inFIG. 3 according to an embodiment of the present invention; -
FIG. 8 is a flowchart of a dam forming method for disposing an optical cover according to an embodiment of the present invention; -
FIG. 9A is an isometric view of an optical cover combined with a dam according to an embodiment of the present invention; -
FIG. 9B is another sectional view for a structure of a high-resolution camera module according to an embodiment of the present invention; -
FIG. 10A is an isometric view of a darn according to an embodiment of the present invention; -
FIG. 10B is another isometric view of an optical cover combined with a dam according to an embodiment of the present invention; -
FIG. 10C is still another sectional view for a structure of a high-resolution camera module according to an embodiment of the present invention; and -
FIG. 10D is a top view of region AA′ inFIG. 10C according to an embodiment of the present invention. - Referring to
FIG. 3 , a high-resolution camera module 20 according to an embodiment of the present invention includes: aceramic substrate 21, anoptical cover 22, animage sensor chip 23, and apackaging portion 24. Referring toFIG. 4 , a method S200 for making a high-resolution camera module according to an embodiment of the present invention includes the steps of: providing an image sensor wafer (step S210), performing inspection to define good chips (step S220), disposing an optical cover onto each good chip (step S230), cutting the image sensor wafer (step S240), disposing each image sensor chip onto a ceramic substrate (step S250), and forming a packaging portion (step S260). - The step of providing an image sensor wafer (step S210) is now described with reference to
FIG. 5 . Animage sensor wafer 30 is made by a wafer manufacturing process and includes a plurality of wafer-level image sensor chips 23. Eachimage sensor chip 23 has afirst surface 231 and asecond surface 232, wherein thefirst surface 231 is an upper surface of theimage sensor chip 23 and has asensing area 233 surrounded byconductive contacts 26. Theconductive contacts 26 may be bond pads. - The step of performing inspection to define good chips (step S220) is carried out as follows. All the finished image sensor chips 23 on the
image sensor wafer 30 are inspected, by an image test or an electrical test for example, to determine whether eachimage sensor chip 23 functions properly and is defect-free. Additionally, a particle inspection is performed to determine if anyimage sensor chip 23 is rendered defective by an excessive amount of particles lying thereon. Thoseimage sensor chips 23 which function properly and are free of defects are defined asgood chips 31, and thoseimage sensor chips 23 which fail to function properly or are defective are defined asbad chips 32. - Next, the step of disposing an optical cover onto each good chip (step S230) is executed. An
optical cover 22 is provided onto thefirst surface 231 of each of thegood chips 31 to keep thegood chips 31 from particle contamination during the following packaging process (e.g., cutting process or connecting process). - In the following steps, only the
good chips 31 are used, and thebad chips 32 are not used; therefore, all theimage sensor chips 23 hereinafter mentioned aregood chips 31. Please note that the optical covers 22 must be smaller than thegood chips 31 and must not cover theconductive contacts 26 of thegood chips 31. Moreover, eachoptical cover 22 must be located right above thesensing area 233. Theoptical cover 22 may be a glass cover allowing light to impinge on thesensing area 233 through the glass cover. - To prevent the
optical cover 22 from tilting while being disposed on theimage sensor chip 23, the step of disposing an optical cover (step S230) can be performed with the following two ways: the first one is epoxy dispensing and the second one is dam forming. - Referring to
FIGS. 3 , 6, and 7A, in the epoxy dispensing method, the step of disposing an optical cover (step S230′) includes: applying an adhesive on the image sensor chip (step S231) and disposing the optical cover onto the image sensor chip (step S232). - To begin with, in step S231, an adhesive 281 is applied, by an epoxy dispensing technique, to the
first surface 231 of theimage sensor chip 23 at positions approximately between theconductive contacts 26 and thesensing area 233, i.e., at positions where theoptical cover 22 is to be bonded. The adhesive 281 can be applied in a closed loop pattern to form and seal acavity 27 between theoptical cover 22 and theimage sensor chip 23. - Then, in step S232, the
optical cover 22 is bonded to theimage sensor chip 23 by the adhesive 281. The adhesive 281 may be used in conjunction withball spacers 282. The adhesive 281 may be used in conjunction withball spacers 282, whose height prevents the flowing adhesive 281 from forming various heights and thereby prevents theoptical cover 22 from tilting. Should theoptical cover 22 tilt, the yield rate will be lowered. - Referring to
FIG. 7B as well, the adhesive 281 may be in a C shape pattern with anopening 283. It prevents gas pressure inside thecavity 27 from varying due to rising temperature, and thereby prevents theoptical cover 22 from tilting or the adhesive 281 from overflowing. - Referring to
FIG. 7C as well, the adhesive 281 may be in two L shape patterns. These L shape patterns may be disposed diagonally to form a square pattern with twoopenings 283 in two diagonal corners. Theopening 283, formed among the adhesive 281, theoptical cover 22 and theimage sensor chip 23, may balance the gas pressure inside and outside thecavity 27 to prevent excessively high pressure inside thecavity 27 from pushing theoptical cover 22 or the adhesive 281 and causing tilt of theoptical cover 22 or overflow of the adhesive 281. - As shown in
FIG. 8 toFIG. 9B , in the method of dam forming, the step of disposing an optical cover (step S230″) includes: providing a dam onto an optical cover (step S233) and disposing the optical cover onto an image sensor chip (step S234). - First, in step S233, a
dam 29 is provided on a periphery of athird surface 221, which faces theimage sensor chip 23, of anoptical cover 22. Thedam 29 may be a closed loop structure which flushes with sides of thethird surface 211 or is located on the interior of thethird surface 211 and keeps a distance from the sides of thethird surface 211. - In step S234 that follows, the adhesive 281 is pre-applied to the
first surface 231 of theimage sensor chip 23 at positions approximately between theconductive contacts 26 and thesensing area 233. Theoptical cover 22 on which thedam 29 has been formed is bonded to theimage sensor chip 23 by adhering a bottom surface of thedam 29 with the adhesive 281 such that theoptical cover 22 lies above theimage sensor chip 23. The adhesive 281 is also in a closed loop pattern to form and completely seal acavity 27 among theoptical cover 22, thedam 29 and theimage sensor chip 23. - A fixed height of the
dam 29 ensures that theoptical cover 22 is parallel to theimage sensor chip 23 without tilting. Furthermore, a volume of thecavity 27 can be effectively reduced by controlling the fixed height of thedam 29. Thedam 29 can be made of any one of the following or a combination thereof: epoxy, silicone, liquid crystal polymer, molding compound, siloxane based polymer, photosensitive dry film, solder mask, glass, and ceramic. - As shown in
FIG. 10A toFIG. 10D , to solve unsteady bonding of theoptical cover 22 or overflow of the adhesive due to excessively high air pressure inside thecavity 27 under temperature variation during process, adepression 293 may be formed on an inside of thedam 29. Because of the depression, a lower plane is formed inside anupper surface 291 of thedam 29 on thedepression 293, and stepwise level differences are formed longitudinally and transversely. Aframe flange 292 may be formed on an outer peripheral edge of theupper surface 291 of thedam 29, and a thickness for a portion of theframe flange 292 corresponding to thedepression 293 may be smaller. - When the
frame flange 292 is combined with theoptical cover 22, a periphery of a lower surface of theoptical cover 22 may be disposed on the interior of theupper surface 291 of thedam 29, and the lateral side of theoptical cover 22 connects theframe flange 292. However, the lower plane on thedepression 293 cannot contact theoptical cover 22, and the thickness for the portion of theframe flange 292 corresponding to thedepression 293 is smaller, it cannot tightly contact the periphery of theoptical cover 22. Anopening 283′ with L shaped section is formed where theoptical cover 22, theframe flange 292, and thedam 29 do not contact with each other. Theopening 283′ may be used to circulate gas inside and outside thecavity 27 to balance gas pressure. - As shown in the
FIGS. 4 , 7B, 7C and 10C, ifopenings 283/283′ are used to balance gas pressure inside and outside thecavity 27, the method S200 may further include an opening sealing step S235 for sealing theopenings 283/283′ with asealant 284 after completion of the step S230. Thus, the high-resolution camera module 20 further includes a sealant 284 air-tightly filling theopenings 283/283′ to prevent contamination or damage to theimage sensor chip 23 during early stage of the manufacturing process and increase yield rate. - As shown in
FIGS. 4 , 5, 9B and 10C, in the step of cutting the image sensor wafer (step S240), at last, theimage sensor wafer 30 is cut to obtain the discreteimage sensor chip 23 covered with theoptical cover 22 respectively. - As shown in the
FIGS. 3 to 5 , 9B and 10C, in the step of disposing the image sensor chip onto a ceramic substrate (step S250), the dividedimage sensor chip 23 is then electrically connected to aceramic substrate 21 by a flip-chip technique. Theceramic substrate 21 has ahollow portion 213, abottom surface 211, and atop surface 212, wherein thetop surface 212 is an upper surface of theceramic substrate 21 and thebottom surface 211 is a lower surface of theceramic substrate 21. A horizontal area of thehollow portion 213 is larger than the surface of theoptical cover 22 such that theoptical cover 22 can be accommodated in a space formed by thehollow portion 213 when theoptical cover 22 is covered on theimage sensor chip 23. Thefirst surface 231 of the dividedimage sensor chip 23 is adhered and disposed to thebottom surface 211 of theceramic substrate 21 and faces thehollow portion 213 such that theimage sensor chip 23 is electrically connected to a circuit structure on thebottom surface 211 of theceramic substrate 21 throughconductive contacts 26. - In the step of forming a packaging portion (step S260), a mold compound or a liquid compound is used to fill a periphery of the
image sensor chip 23 and connection between theimage sensor chip 23 and theceramic substrate 21 to form apackaging portion 24. Thus, thepackaging portion 24 covers the periphery of theimage sensor chip 23 and the connection between theimage sensor chip 23 and theceramic substrate 21 to improve protection for the periphery of theimage sensor chip 23 and prevent it from collision damages. - The high-
resolution camera module 20 may further include a plurality ofpassive elements 25 disposed on thetop surface 212 of theceramic substrate 21. Thepassive elements 25 may be electrically connected to theimage sensor chip 23 through theconductive contacts 26. - The disclosed method S200 for making a high-resolution camera module and the high-
resolution camera modules 20 made thereby feature a relativelysmall cavity 27, which not only reduces the volume of the high-resolution camera modules 20, but also increases temperature cycling reliability. By disposing the optical covers 22 respectively onto only thegood chips 31 which have been inspected in advance, a wasteful use of materials is avoided, and the yield rate can be improved. Moreover, as the optical covers 22 are respectively disposed on the image sensor chips 23 on theimage sensor wafer 30 before theimage sensor wafer 30 is cut, theimage sensor chips 23 are protected from the very beginning to avoid contamination, allowing the yield rate and production efficiency of the high-resolution camera modules to be increased. - The features of the present invention are disclosed above by the preferred embodiment to allow persons skilled in the art to gain insight into the contents of the present invention and implement the present invention accordingly. The preferred embodiment of the present invention should not be interpreted as restrictive of the scope of the present invention. Hence, all equivalent modifications or amendments made to the aforesaid embodiment should fall within the scope of the appended claims.
Claims (20)
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US13/796,622 US8703519B1 (en) | 2012-10-09 | 2013-03-12 | Structure and manufacturing method for high resolution camera module |
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US201261711594P | 2012-10-09 | 2012-10-09 | |
US13/796,622 US8703519B1 (en) | 2012-10-09 | 2013-03-12 | Structure and manufacturing method for high resolution camera module |
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KR101873202B1 (en) | 2018-05-24 | 2018-07-02 | 주식회사 싸인텔레콤 | The one shot camera for artificial intelligence fuction by using neuromorphic chip |
US11437526B2 (en) * | 2019-12-09 | 2022-09-06 | Amkor Technology Singapore Holding Pte. Ltd. | Electronic devices having a sensor and a translucent mold compound and methods of manufacturing electronic devices |
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TWI699005B (en) | 2016-11-02 | 2020-07-11 | 原相科技股份有限公司 | Optical component packaging structure |
TWI671921B (en) * | 2018-09-14 | 2019-09-11 | 頎邦科技股份有限公司 | Chip package and chip |
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US8068897B1 (en) * | 1999-03-01 | 2011-11-29 | Gazdzinski Robert F | Endoscopic smart probe and method |
US10973397B2 (en) * | 1999-03-01 | 2021-04-13 | West View Research, Llc | Computerized information collection and processing apparatus |
US6566745B1 (en) * | 1999-03-29 | 2003-05-20 | Imec Vzw | Image sensor ball grid array package and the fabrication thereof |
KR100498708B1 (en) * | 2004-11-08 | 2005-07-01 | 옵토팩 주식회사 | Electronic package for semiconductor device and packaging method thereof |
CN101521185A (en) * | 2008-02-26 | 2009-09-02 | 南茂科技股份有限公司 | Package structure and package process of optical wafer |
JP5136215B2 (en) * | 2008-05-29 | 2013-02-06 | 住友ベークライト株式会社 | Semiconductor device |
CN102263113A (en) * | 2010-05-24 | 2011-11-30 | 胜开科技股份有限公司 | Wafer level image sensor module structure with specific focal length and manufacturing method thereof |
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2013
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Cited By (2)
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KR101873202B1 (en) | 2018-05-24 | 2018-07-02 | 주식회사 싸인텔레콤 | The one shot camera for artificial intelligence fuction by using neuromorphic chip |
US11437526B2 (en) * | 2019-12-09 | 2022-09-06 | Amkor Technology Singapore Holding Pte. Ltd. | Electronic devices having a sensor and a translucent mold compound and methods of manufacturing electronic devices |
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US8703519B1 (en) | 2014-04-22 |
TW201415612A (en) | 2014-04-16 |
CN103715210A (en) | 2014-04-09 |
TWI449167B (en) | 2014-08-11 |
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