US20140048877A1 - Lateral diffusion metal oxide semiconductor transistor structure - Google Patents

Lateral diffusion metal oxide semiconductor transistor structure Download PDF

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US20140048877A1
US20140048877A1 US13/585,801 US201213585801A US2014048877A1 US 20140048877 A1 US20140048877 A1 US 20140048877A1 US 201213585801 A US201213585801 A US 201213585801A US 2014048877 A1 US2014048877 A1 US 2014048877A1
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region
polarity
transistor structure
semiconductor layer
ldmos transistor
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Wei-Shan Liao
An-Hung LIN
Hong-Ze Lin
Bo-Jui Huang
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United Microelectronics Corp
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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    • H01L29/1025—Channel region of field-effect devices
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    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
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    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Definitions

  • the present invention relates to a semiconductor device, and more particularly to a lateral diffusion metal-oxide-semiconductor (LDMOS) transistor device.
  • LDMOS lateral diffusion metal-oxide-semiconductor
  • a LDMOS transistor device is characterized by low on-resistance and high breakdown voltage and is widespread applied in an integral part of modern day display panels, telecommunication systems, motor controllers, switch lock power supplies, inverters, and alike.
  • a typical LDMOS transistor device is an asymmetric power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate and coplanar drain/source regions separated by a channel region which are fabricated in an epitaxial layer of a substrate.
  • MOSFET metal-oxide-semiconductor field effect transistor
  • the drain region is formed in a drift region which is fabricated by a lightly doped drain (LDD) implant process and used to isolate the drain and the channel regions.
  • LDD lightly doped drain
  • the drain region and the gate are laterally separated by a field oxide (FOX). While the LDMOS transistor device is operated in high voltage, electric field density around the drain region can be reduced due to the existence of the drift region and the FOX, such that the breakdown voltage of the LDMOS transistor device can be improved.
  • LDD lightly doped drain
  • the present invention provides a LDMOS transistor structure comprising a barrier layer, a semiconductor layer, a source, a first drain and a guard ring.
  • the barrier layer with a first polarity is disposed in a substrate.
  • the semiconductor layer with a second polarity is disposed on the barrier layer.
  • the source has a first polarity region and a second polarity region both disposed in the semiconductor layer.
  • the first drain is disposed in the semiconductor layer and has a drift region with the second polarity.
  • the guard ring with the first polarity extends downward from a surface of the semiconductor layer in a manner of getting in touch with the barrier layer and surrounding the source and the drain, and is electrically connected to the source.
  • the first polarity is n-type conductivity
  • the second polarity is p-type conductivity
  • the barrier layer comprises a tri-layer phosphorous/antimony/phosphorous (P/Sb/P) doping structure.
  • the first polarity region and a second polarity region are disposed in an n-type well which is disposed in the semiconductor layer in a manner of getting in touch with the barrier layer.
  • the n-type well comprises an n-body region and a high-voltage drift N-well (HVDNW) region, wherein the first polarity region and a second polarity region are disposed in the n-body region, and the n-body region is disposed in the HVDNW region.
  • HVDNW high-voltage drift N-well
  • the drift region has a doping concentration substantially greater than that of the semiconductor layer.
  • the LDMOS transistor structure further comprises a first gate disposed on the semiconductor layer and partially straddling over a first field oxide (FOX), wherein the first gate and the first drain are separated from each other by the first FOX.
  • FOX field oxide
  • the LDMOS transistor structure further comprises a second drain disposed in the semiconductor layer and a second gate disposed over the semiconductor layer, wherein the second gate partially straddles over a second FOX by which the second gate and the second drain are separated from each other.
  • the first drain and the second drain constitute a symmetric structure against the source, and the source serves as a common source of the first drain and the second drain.
  • the second polarity region is separated into two parts by the first polarity region.
  • the guard ring has a concentration decreasing gradually from a top surface of the semiconductor layer to the barrier.
  • the guard ring is electrically connected to the source via an interconnection or a wire.
  • the first polarity is p-type conductivity
  • the second polarity is n-type conductivity
  • the barrier layer comprises a tri-layer boron/Indium/boron (B/In/B) doping structure.
  • a LDMOS transistor structure wherein a guard ring is formed in a semiconductor layer in a manner of getting in touch with a barrier layer disposed in the semiconductor layer and surrounding a source and a drain. Since the guard ring and the barrier have the same polarity and both of them are electrically connected with the source, thus an isolation structure with an electric potential identical to that of the source is formed in a manner of surrounding the LDMOS transistor, so as to prevent the parasitic circuit elements formed in the LDMOS transistor device from latching up with other integrated circuit element, such that the device punch-through problems due to critical dimension shrinkage can be solved. Meanwhile the on-resistance of the LDMOS transistor device can be decreased, the breakdown voltage of the LDMOS transistor device can be increased, and the performance of the LDMOS transistor device can be improved.
  • FIG. 1 illustrates a cross-sectional view of a LDMOS transistor structure in accordance with one embodiment of the present invention
  • FIG. 2 illustrates a cross-sectional view of a LDMOS transistor structure in accordance with another embodiment of the present invention.
  • FIG. 3 illustrates a cross-sectional view of a LDMOS transistor structure in accordance with further embodiment of the present invention.
  • a LDMOS transistor structure is provided by the present invention to solve device punch-through problems due to critical dimension shrinkage.
  • the present invention will now be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
  • FIG. 1 illustrates a cross-sectional view of a LDMOS transistor structure 100 in accordance with one embodiment of the present invention.
  • the LDMOS transistor structure 100 comprises a substrate 101 , a barrier layer 102 , a p-type semiconductor layer 103 , a gate 104 , a source 105 , a drain 106 , a FOX 107 , a guard ring 108 and a gate oxide layer 109 .
  • the substrate 101 is a semiconductor substrate preferably is a silicon substrate.
  • the barrier layer 102 is an n-type doping layer formed in the substrate 101 .
  • the barrier layer 102 extends downward in to the substrate 101 from a surface 101 a of the substrate 101 ; and the barrier layer 102 comprises phosphorous and antimony dopants.
  • the barrier layer 102 has a tri-layer P/Sb/P doping structure; the barrier layer 102 includes an antimony doping layer 102 a and two phosphorous doping layers 102 b and 102 c ; wherein the antimony doping layer 102 a has a doping concentration greater than that of the two phosphorous doping layers 102 b and 102 c sandwiching the antimony layer 102 a.
  • the barrier layer 102 has a thickness about 3 ⁇ m, and the tri-layer P/Sb/P doping structure is formed by at least three separated doping processes which are performed to implant phosphorous dopants, antimony dopants and phosphorous dopants in sequence into the substrate 101 .
  • the tri-layer P/Sb/P doping structure may be formed by steps as follows: A phosphorous doping layer is firstly formed in the substrate 101 , and the antimony doping layer 102 a is then formed in the phosphorous doping layer by implanting antimony dopants into the phosphorous doping layer, so as to divide the phosphorous doping layer into two parts (referred as the two phosphorous doping layers 102 b and 102 c ).
  • the p-type semiconductor layer 103 is an epitaxial layer formed on the substrate 101 , wherein the epitaxial layer is disposed over and in contact with the barrier layer 102 .
  • the p-type semiconductor layer 103 is doped with p-type dopants, such as boron ions, and has a thickness about 7 ⁇ m.
  • the source 105 has a p-type region 105 a and an n-type region 105 b disposed in an n-type well 110 formed in the p-type semiconductor layer 103 in a manner of getting in touch with the barrier layer 102 .
  • the n-type well 110 comprises an n-body region (referred as N-Body region) 110 a , a high-voltage drift N-well (referred as HVDNW region) 110 , wherein the N-Body region 110 a is disposed in the HVDNW region 110 b , and the p-type region 105 a and the n-type region 105 b are disposed in the N-Body region 110 a .
  • the n-type region 105 b is a high concentration n-type doping region (referred as N+ region 105 b ), and the p-type region 105 a is a high concentration p-type doping region (referred as P+ region 105 a ).
  • the N+ region 105 b has a doping concentration substantially greater than that of the N-Body region 110 a
  • the N-Body region 110 a has a doping concentration substantially greater than that of the HVDNW region 110 b.
  • the drain 106 is formed in the p-type semiconductor layer 103 and has a high concentration p-type doping region (referred as P+ region) 106 a and a p-type drift region (referred as P-Drift region) 106 b .
  • P+ region p-type doping region
  • P-Drift region p-type drift region
  • the P+ region 106 a is disposed in the P-Drift region 106 b and has a doping concentration substantially greater than that of the P-Drift region 106 b .
  • the P-Drift region 106 b has a doping concentration substantially greater than that of the p-type semiconductor layer 103 .
  • the gate oxide layer 109 is blanket over the source 105 and a portion of the p-type semiconductor layer 103 .
  • the FOX 107 is formed in the p-type semiconductor layer 103 and protrudes beyond a top surface 103 a of the p-type semiconductor layer 103 .
  • the gate 104 is disposed on the gate oxide layer 109 and partially straddles over the FOX 107 , wherein the gate 104 and the drain 106 are separated from each other by the FOX 107 .
  • the guard ring 108 is an n-type doping region extending downward in to the p-type semiconductor layer 103 from the top surface 103 a of the p-type semiconductor layer 103 in a manner of getting in touch with the barrier layer 102 and surrounding the source 105 and the drain 106 .
  • the guard ring 108 is electrically connected to the source 105 via a conductive structure 111 , such as an interconnection or a wire.
  • the guard ring 108 comprises a high concentration n-type doping region (referred as N+ region) 108 a , an n-type well (referred as N-Well region) 108 b , an n-type drift region (referred as N-Drift region) 108 c and a high-voltage drift N-well (referred as HVDNW region) 108 d.
  • N+ region n-type doping region
  • N-Well region n-type well
  • N-Drift region n-type drift region
  • HVDNW region high-voltage drift N-well
  • the N+ region 108 a extends downwards in to the N-Well region 108 b from the top surface 103 a of the p-type semiconductor layer 103 ; the N-Well region 108 b is disposed in the N-Drift region 108 c ; and the N-Drift region 108 c is disposed in the HVDNW region 108 d .
  • the N+ region 108 a has a doping concentration substantially greater than that of the N-Well region 108 b ; the doping concentration of the N-Well region 108 b is substantially greater than that of the N-Drift region 108 c ; and the doping concentration of the N-Drift region 108 c is substantially greater than that of the HVDNW region 108 d .
  • the guard ring 108 has a concentration decreasing gradually from the top surface 103 a of the semiconductor layer 103 to the barrier 102 .
  • the guard ring 108 and the barrier layer 102 has identical polarity and both of them are electrically connected to the source 105 , thus an isolation structure with an electric potential identical to that of the source 105 is formed in the p-type semiconductor layer 103 so as to prevent the parasitic circuit elements formed in the p-type semiconductor layer 103 from latching up with other integrated circuit element (not shown). Meanwhile the on-resistance of the LDMOS transistor structure 100 can be decreased, the breakdown voltage of the LDMOS transistor structure 100 can be increased, and the performance of the LDMOS transistor structure 100 can be improved.
  • FIG. 2 illustrates a cross-sectional view of a LDMOS transistor structure 200 in accordance with another embodiment of the present invention.
  • the physical structure of the LDMOS transistor structure 200 is generally similar to that of the LDMOS transistor structure 100 depicted in FIG. 1 .
  • the difference therebetween is that the LDMOS transistor structure 200 further comprises a gate 204 and a drain 206 .
  • the same elements may be indicated by the same numbers.
  • the drain 106 and 206 constitute a symmetric structure against the source 105 , and the source 205 serves as the common source thereof.
  • the source 205 comprises an n-type region 205 b and two p-type regions 205 a and 205 c disposed in the n-type well 110 formed in the p-type semiconductor layer 103 , wherein the two p-type regions 205 a and 205 c are separated by the n-type region 205 b .
  • the n-type region 205 b is a high concentration n-type doping region (referred as N+ region 205 b ), and these two p-type region 205 a and 205 c are high concentration p-type doping regions (referred as P+ region 205 a and 205 c ).
  • the N+ region 205 b has a doping concentration substantially greater than that of the N-Body region 110 a.
  • the drain 206 is formed in the p-type semiconductor layer 103 and has a high concentration p-type doping region (referred as P+ region) 206 a and a p-type drift region (referred as P-Drift region) 206 b .
  • the P+ region 206 a is disposed in the P-Drift region 206 b and has a doping concentration substantially greater than that of the P-Drift region 206 b .
  • the P-Drift region 206 b has a doping concentration substantially greater than that of the p-type semiconductor layer 103 .
  • the gate 204 is disposed on the gate oxide layer 109 and partially straddles over the FOX 107 , wherein the gate 204 and the drain 206 are separated from each other by the FOX 107 .
  • an isolation structure with an electric potential identical to that of the source 205 is formed in the p-type semiconductor layer 103 , so as to prevent parasitic circuit elements formed therein from latching up with other integrated circuit element (not shown). Meanwhile the on-resistance of the LDMOS transistor structure 200 can be decreased, the breakdown voltage of the LDMOS transistor structure 200 can be increased, and the performance of the LDMOS transistor structure 200 can be improved.
  • p-channel transistors described in the aforementioned embodiments are just illustrative; the applying scope of the present invention may not be limited. Thus the features and advantages of the present invention may be further applied by an n-channel transistor.
  • FIG. 3 illustrates a cross-sectional view of a LDMOS transistor structure 300 in accordance with further embodiment of the present invention.
  • the physical structure of the LDMOS transistor structure 300 is generally similar to that of the LDMOS transistor structure 200 depicted in FIG. 2 . The difference there between is that the LDMOS transistor structure 300 is an n-channel transistor structure rather than a p-channel transistor structure.
  • the LDMOS transistor structure 300 comprises a substrate 301 , a barrier layer 302 , an n-type semiconductor layer 303 , two gates 304 and 314 , a source 305 , two drains 306 and 316 , a FOX 307 , a guard ring 308 and a gate oxide layer 309 .
  • the barrier layer 302 is an n-type doping layer formed in the substrate 101 , wherein the barrier layer 302 comprises indium and boron dopants.
  • the barrier layer 302 of the present embodiment is illustrated as a single layer structure (see FIG. 3 ), in some other embodiments of the present invention, the barrier layer 302 may otherwise comprise a tri-layer B/In/B doping structure, wherein the indium doping layer (not shown) has a doping concentration greater than that of the two boron doping layers (not shown) sandwiching the indium layer.
  • the n-type semiconductor layer 303 is an epitaxial layer formed on the substrate 301 , wherein the epitaxial layer is disposed over and in contact with the barrier 302 .
  • the source 305 comprises an p-type region 305 b and two n-type regions 305 a and 305 c disposed in an p-type well 310 formed in the n-type semiconductor layer 303 , wherein the p-type well 310 comprises an p-body region (referred as P-Body region) 310 a , a high-voltage drift p-well (referred as HVDPW region) 310 b .
  • P-Body region p-body region
  • HVDPW region high-voltage drift p-well
  • the P-Body region 310 a is disposed in the HVDPW region 310 b , and the two n-type region 305 a and 305 c and the p-type region 305 b are disposed in the P-Body region 310 a , wherein the two n-type regions 305 a and 305 c are separated by the p-type region 305 b .
  • the p-type region 305 b is a high concentration p-type doping region (referred as P+ region 305 b ), these two n-type region 305 a and 305 c are high concentration n-type doping regions (referred as N+ region 305 a and 305 c ); the P+ region 305 b has a doping concentration substantially greater than that of the P-Body region 310 a , and the concentration of the P-Body region 310 a is substantially greater than that of the HVDPW region 310 b.
  • the drain 306 is formed in the n-type semiconductor layer 303 and has a high concentration n-type doping region (referred as N+ region) 306 a and an n-type drift region (referred as N-Drift region) 306 b , wherein the N+ region 306 a is disposed in the N-Drift region 306 b and has a doping concentration substantially greater than that of the N-Drift region 306 b .
  • the N-Drift region 306 b has a doping concentration substantially greater than that of the n-type semiconductor layer 303 .
  • the drain 316 is formed in the n-type semiconductor layer 303 and has a high concentration n-type doping region (referred as N+ region) 316 a and an n-type drift region (referred as N-Drift region) 316 b , wherein the N+ region 316 a is disposed in the N-Drift region 316 b and has a doping concentration substantially greater than that of the N-Drift region 316 b .
  • the N-Drift region 316 b has a doping concentration substantially greater than that of the n-type semiconductor layer 303 .
  • the gate oxide layer 309 is blanket over the source 305 and a portion of the n-type semiconductor layer 303 .
  • the FOX 307 is formed in the n-type semiconductor layer 303 and protrudes beyond a top surface 303 a of the n-type semiconductor layer 303 .
  • the gates 304 and 314 are respectively disposed on the gate oxide layer 309 and partially straddle over the FOX 307 by which the gate 304 and the drain 306 are separated from each other and so do the gate 314 and the drain 316 .
  • the guard ring 308 is a p-type doping region extending downward in to the n-type semiconductor layer 303 from the top surface 303 a of the n-type semiconductor layer 303 in a manner of getting in touch with the barrier layer 302 and surrounding the source 305 and the drains 306 and 316 .
  • the guard ring 308 is electrically connected to the source 305 via a conductive structure 311 , such as an interconnection or a wire.
  • the guard ring 308 comprises a high concentration p-type doping region (referred as P+ region) 308 a , a p-type well (referred as P-Well region) 308 b , a p-type drift region (referred as P-Drift region) 308 c and a high-voltage drift p-well (referred as HVDPW region) 308 d.
  • P+ region a high concentration p-type doping region
  • P-Well region p-type well
  • P-Drift region p-type drift region
  • HVDPW region high-voltage drift p-well
  • the P+ region 308 a extends downwards in to the P-Well region 308 b from the top surface 303 a of the n-type semiconductor layer 303 ; the P-Well region 308 b is disposed in the P-Drift region 308 c ; and the P-Drift region 308 c is disposed in the HVDPW region 308 d .
  • the P+ region 308 a has a doping concentration substantially greater than that of the P-Well region 308 b ; the doping concentration of the P-Well region 308 b is substantially greater than that of the P-Drift region 308 c ; and the doping concentration of the P-Drift region 308 c is substantially greater than that of the HVDPW region 308 d.
  • the guard ring 308 and the barrier layer 302 has identical polarity and both of them are electrically connected to the source 305 , thus an isolation structure with an electric potential identical to that of the source 305 is formed in the n-type semiconductor layer 303 , so as to prevent parasitic circuit elements formed in the n-type semiconductor layer 303 from latching up with other integrated circuit element (not shown). Meanwhile the on-resistance of the LDMOS transistor structure 300 can be decreased, and the breakdown voltage of the LDMOS transistor structure 300 can be increased, and the performance of the LDMOS transistor structure 300 can be improved.
  • a LDMOS transistor structure wherein a guard ring is formed in a semiconductor layer in a manner of getting in touch with a barrier layer disposed in the semiconductor layer and surrounding a source and a drain. Since the guard ring and the barrier layer has the same polarity and both of them are electrically connected with the source, thus an isolation structure with an electric potential identical to that of the source is formed in a manner of surrounding the LDMOS transistor, so as to prevent the parasitic circuit elements formed in the LDMOS transistor device from latching up with other integrated circuit element, such that, the device punch-through problems due to critical dimension shrinkage can be solved. Meanwhile the on-resistance of the LDMOS transistor device can be decreased, the breakdown voltage of the LDMOS transistor device can be increased, and the performance of the LDMOS transistor device can be improved.

Abstract

A lateral diffusion metal-oxide-semiconductor (LDMOS) transistor structure comprises a barrier layer, a semiconductor layer, a source, a first drain and a guard ring. The barrier layer with a first polarity is disposed in a substrate. The semiconductor layer with a second polarity is disposed on the barrier layer. The source has a first polarity region and a second polarity region both formed in the semiconductor layer. The first drain is disposed in the semiconductor layer and has a drift region with the second polarity. The guard ring with the first polarity extends downward from a surface of the semiconductor layer in a manner of getting in touch with the barrier layer and to surround the source and the drain, and is electrically connected to the source.

Description

    FIELD OF THE INVENTION
  • The present invention relates to a semiconductor device, and more particularly to a lateral diffusion metal-oxide-semiconductor (LDMOS) transistor device.
    • BACKGROUND OF THE INVENTION
  • A LDMOS transistor device is characterized by low on-resistance and high breakdown voltage and is widespread applied in an integral part of modern day display panels, telecommunication systems, motor controllers, switch lock power supplies, inverters, and alike.
  • A typical LDMOS transistor device is an asymmetric power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate and coplanar drain/source regions separated by a channel region which are fabricated in an epitaxial layer of a substrate. Wherein the drain region is formed in a drift region which is fabricated by a lightly doped drain (LDD) implant process and used to isolate the drain and the channel regions. The drain region and the gate are laterally separated by a field oxide (FOX). While the LDMOS transistor device is operated in high voltage, electric field density around the drain region can be reduced due to the existence of the drift region and the FOX, such that the breakdown voltage of the LDMOS transistor device can be improved.
  • However, as the circuit critical dimensions continuing to shrinkage, parasitic circuit elements formed in the LDMOS transistor device may be more likely punch through due to the converse parasitic diode effect. Therefore, there is a need of providing an improved LDMOS transistor structure in order to obviate the drawbacks encountered from the prior art and improve the performance of the semiconductor device.
    • SUMMARY OF THE INVENTION
  • In accordance with an aspect, the present invention provides a LDMOS transistor structure comprising a barrier layer, a semiconductor layer, a source, a first drain and a guard ring. The barrier layer with a first polarity is disposed in a substrate. The semiconductor layer with a second polarity is disposed on the barrier layer. The source has a first polarity region and a second polarity region both disposed in the semiconductor layer. The first drain is disposed in the semiconductor layer and has a drift region with the second polarity. The guard ring with the first polarity extends downward from a surface of the semiconductor layer in a manner of getting in touch with the barrier layer and surrounding the source and the drain, and is electrically connected to the source.
  • In one embodiment of the present invention, the first polarity is n-type conductivity, and the second polarity is p-type conductivity.
  • In one embodiment of the present invention, the barrier layer comprises a tri-layer phosphorous/antimony/phosphorous (P/Sb/P) doping structure.
  • In one embodiment of the present invention, the first polarity region and a second polarity region are disposed in an n-type well which is disposed in the semiconductor layer in a manner of getting in touch with the barrier layer.
  • In one embodiment of the present invention, the n-type well comprises an n-body region and a high-voltage drift N-well (HVDNW) region, wherein the first polarity region and a second polarity region are disposed in the n-body region, and the n-body region is disposed in the HVDNW region.
  • In one embodiment of the present invention, the drift region has a doping concentration substantially greater than that of the semiconductor layer.
  • In one embodiment of the present invention, the LDMOS transistor structure further comprises a first gate disposed on the semiconductor layer and partially straddling over a first field oxide (FOX), wherein the first gate and the first drain are separated from each other by the first FOX.
  • In one embodiment of the present invention, the LDMOS transistor structure further comprises a second drain disposed in the semiconductor layer and a second gate disposed over the semiconductor layer, wherein the second gate partially straddles over a second FOX by which the second gate and the second drain are separated from each other.
  • In one embodiment of the present invention, the first drain and the second drain constitute a symmetric structure against the source, and the source serves as a common source of the first drain and the second drain.
  • In one embodiment of the present invention, the second polarity region is separated into two parts by the first polarity region.
  • In one embodiment of the present invention, the guard ring has a concentration decreasing gradually from a top surface of the semiconductor layer to the barrier.
  • In one embodiment of the present invention, the guard ring is electrically connected to the source via an interconnection or a wire.
  • In one embodiment of the present invention, the first polarity is p-type conductivity, and the second polarity is n-type conductivity. In one embodiment of the present invention, the barrier layer comprises a tri-layer boron/Indium/boron (B/In/B) doping structure.
  • In accordance with the aforementioned embodiments of the present invention, a LDMOS transistor structure is provided, wherein a guard ring is formed in a semiconductor layer in a manner of getting in touch with a barrier layer disposed in the semiconductor layer and surrounding a source and a drain. Since the guard ring and the barrier have the same polarity and both of them are electrically connected with the source, thus an isolation structure with an electric potential identical to that of the source is formed in a manner of surrounding the LDMOS transistor, so as to prevent the parasitic circuit elements formed in the LDMOS transistor device from latching up with other integrated circuit element, such that the device punch-through problems due to critical dimension shrinkage can be solved. Meanwhile the on-resistance of the LDMOS transistor device can be decreased, the breakdown voltage of the LDMOS transistor device can be increased, and the performance of the LDMOS transistor device can be improved.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above objects and advantages of the present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:
  • FIG. 1 illustrates a cross-sectional view of a LDMOS transistor structure in accordance with one embodiment of the present invention;
  • FIG. 2 illustrates a cross-sectional view of a LDMOS transistor structure in accordance with another embodiment of the present invention; and
  • FIG. 3 illustrates a cross-sectional view of a LDMOS transistor structure in accordance with further embodiment of the present invention.
    •  DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • A LDMOS transistor structure is provided by the present invention to solve device punch-through problems due to critical dimension shrinkage. The present invention will now be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
  • FIG. 1 illustrates a cross-sectional view of a LDMOS transistor structure 100 in accordance with one embodiment of the present invention. The LDMOS transistor structure 100 comprises a substrate 101, a barrier layer 102, a p-type semiconductor layer 103, a gate 104, a source 105, a drain 106, a FOX 107, a guard ring 108 and a gate oxide layer 109.
  • The substrate 101 is a semiconductor substrate preferably is a silicon substrate. The barrier layer 102 is an n-type doping layer formed in the substrate 101. In some embodiments of the present invention, the barrier layer 102 extends downward in to the substrate 101 from a surface 101 a of the substrate 101; and the barrier layer 102 comprises phosphorous and antimony dopants. In the present embodiment, the barrier layer 102 has a tri-layer P/Sb/P doping structure; the barrier layer 102 includes an antimony doping layer 102 a and two phosphorous doping layers 102 b and 102 c; wherein the antimony doping layer 102 a has a doping concentration greater than that of the two phosphorous doping layers 102 b and 102 c sandwiching the antimony layer 102 a.
  • In some embodiments, the barrier layer 102 has a thickness about 3 μm, and the tri-layer P/Sb/P doping structure is formed by at least three separated doping processes which are performed to implant phosphorous dopants, antimony dopants and phosphorous dopants in sequence into the substrate 101. Alternatively, in some other embodiments, the tri-layer P/Sb/P doping structure may be formed by steps as follows: A phosphorous doping layer is firstly formed in the substrate 101, and the antimony doping layer 102 a is then formed in the phosphorous doping layer by implanting antimony dopants into the phosphorous doping layer, so as to divide the phosphorous doping layer into two parts (referred as the two phosphorous doping layers 102 b and 102 c).
  • The p-type semiconductor layer 103 is an epitaxial layer formed on the substrate 101, wherein the epitaxial layer is disposed over and in contact with the barrier layer 102. In the present embodiment, the p-type semiconductor layer 103 is doped with p-type dopants, such as boron ions, and has a thickness about 7 μm.
  • The source 105 has a p-type region 105 a and an n-type region 105 b disposed in an n-type well 110 formed in the p-type semiconductor layer 103 in a manner of getting in touch with the barrier layer 102. In some embodiments of the present invention, the n-type well 110 comprises an n-body region (referred as N-Body region) 110 a, a high-voltage drift N-well (referred as HVDNW region) 110, wherein the N-Body region 110 a is disposed in the HVDNW region 110 b, and the p-type region 105 a and the n-type region 105 b are disposed in the N-Body region 110 a. In the present embodiment, the n-type region 105 b is a high concentration n-type doping region (referred as N+ region 105 b), and the p-type region 105 a is a high concentration p-type doping region (referred as P+ region 105 a). The N+ region 105 b has a doping concentration substantially greater than that of the N-Body region 110 a, and the N-Body region 110 a has a doping concentration substantially greater than that of the HVDNW region 110 b.
  • The drain 106 is formed in the p-type semiconductor layer 103 and has a high concentration p-type doping region (referred as P+ region) 106 a and a p-type drift region (referred as P-Drift region) 106 b. Wherein the P+ region 106 a is disposed in the P-Drift region 106 b and has a doping concentration substantially greater than that of the P-Drift region 106 b. Besides, the P-Drift region 106 b has a doping concentration substantially greater than that of the p-type semiconductor layer 103.
  • The gate oxide layer 109 is blanket over the source 105 and a portion of the p-type semiconductor layer 103. The FOX 107 is formed in the p-type semiconductor layer 103 and protrudes beyond a top surface 103 a of the p-type semiconductor layer 103. The gate 104 is disposed on the gate oxide layer 109 and partially straddles over the FOX 107, wherein the gate 104 and the drain 106 are separated from each other by the FOX 107.
  • The guard ring 108 is an n-type doping region extending downward in to the p-type semiconductor layer 103 from the top surface 103 a of the p-type semiconductor layer 103 in a manner of getting in touch with the barrier layer 102 and surrounding the source 105 and the drain 106. In some embodiments of the present invention, the guard ring 108 is electrically connected to the source 105 via a conductive structure 111, such as an interconnection or a wire. In some embodiments of the present invention, the guard ring 108 comprises a high concentration n-type doping region (referred as N+ region) 108 a, an n-type well (referred as N-Well region) 108 b, an n-type drift region (referred as N-Drift region) 108 c and a high-voltage drift N-well (referred as HVDNW region) 108 d.
  • Wherein the N+ region 108 a extends downwards in to the N-Well region 108 b from the top surface 103 a of the p-type semiconductor layer 103; the N-Well region 108 b is disposed in the N-Drift region 108 c; and the N-Drift region 108 c is disposed in the HVDNW region 108 d. Besides, the N+ region 108 a has a doping concentration substantially greater than that of the N-Well region 108 b; the doping concentration of the N-Well region 108 b is substantially greater than that of the N-Drift region 108 c; and the doping concentration of the N-Drift region 108 c is substantially greater than that of the HVDNW region 108 d. In other words, the guard ring 108 has a concentration decreasing gradually from the top surface 103 a of the semiconductor layer 103 to the barrier 102.
  • Since the guard ring 108 and the barrier layer 102 has identical polarity and both of them are electrically connected to the source 105, thus an isolation structure with an electric potential identical to that of the source 105 is formed in the p-type semiconductor layer 103 so as to prevent the parasitic circuit elements formed in the p-type semiconductor layer 103 from latching up with other integrated circuit element (not shown). Meanwhile the on-resistance of the LDMOS transistor structure 100 can be decreased, the breakdown voltage of the LDMOS transistor structure 100 can be increased, and the performance of the LDMOS transistor structure 100 can be improved.
  • FIG. 2 illustrates a cross-sectional view of a LDMOS transistor structure 200 in accordance with another embodiment of the present invention. The physical structure of the LDMOS transistor structure 200 is generally similar to that of the LDMOS transistor structure 100 depicted in FIG. 1. The difference therebetween is that the LDMOS transistor structure 200 further comprises a gate 204 and a drain 206. For the purpose of clear description, thereinafter, the same elements may be indicated by the same numbers.
  • In the present embodiment, the drain 106 and 206 constitute a symmetric structure against the source 105, and the source 205 serves as the common source thereof. The source 205 comprises an n-type region 205 b and two p-type regions 205 a and 205 c disposed in the n-type well 110 formed in the p-type semiconductor layer 103, wherein the two p-type regions 205 a and 205 c are separated by the n-type region 205 b. The n-type region 205 b is a high concentration n-type doping region (referred as N+ region 205 b), and these two p-type region 205 a and 205 c are high concentration p-type doping regions (referred as P+ region 205 a and 205 c). The N+ region 205 b has a doping concentration substantially greater than that of the N-Body region 110 a.
  • The drain 206 is formed in the p-type semiconductor layer 103 and has a high concentration p-type doping region (referred as P+ region) 206 a and a p-type drift region (referred as P-Drift region) 206 b. Wherein the P+ region 206 a is disposed in the P-Drift region 206 b and has a doping concentration substantially greater than that of the P-Drift region 206 b. Besides, the P-Drift region 206 b has a doping concentration substantially greater than that of the p-type semiconductor layer 103. The gate 204 is disposed on the gate oxide layer 109 and partially straddles over the FOX 107, wherein the gate 204 and the drain 206 are separated from each other by the FOX 107.
  • Along the same line as the LDMOS transistor structure 100 indicated, an isolation structure with an electric potential identical to that of the source 205 is formed in the p-type semiconductor layer 103, so as to prevent parasitic circuit elements formed therein from latching up with other integrated circuit element (not shown). Meanwhile the on-resistance of the LDMOS transistor structure 200 can be decreased, the breakdown voltage of the LDMOS transistor structure 200 can be increased, and the performance of the LDMOS transistor structure 200 can be improved.
  • It should be appreciated that the p-channel transistors described in the aforementioned embodiments are just illustrative; the applying scope of the present invention may not be limited. Thus the features and advantages of the present invention may be further applied by an n-channel transistor.
  • FIG. 3 illustrates a cross-sectional view of a LDMOS transistor structure 300 in accordance with further embodiment of the present invention. The physical structure of the LDMOS transistor structure 300 is generally similar to that of the LDMOS transistor structure 200 depicted in FIG. 2. The difference there between is that the LDMOS transistor structure 300 is an n-channel transistor structure rather than a p-channel transistor structure.
  • The LDMOS transistor structure 300 comprises a substrate 301, a barrier layer 302, an n-type semiconductor layer 303, two gates 304 and 314, a source 305, two drains 306 and 316, a FOX 307, a guard ring 308 and a gate oxide layer 309.
  • The barrier layer 302 is an n-type doping layer formed in the substrate 101, wherein the barrier layer 302 comprises indium and boron dopants. Although the barrier layer 302 of the present embodiment is illustrated as a single layer structure (see FIG. 3), in some other embodiments of the present invention, the barrier layer 302 may otherwise comprise a tri-layer B/In/B doping structure, wherein the indium doping layer (not shown) has a doping concentration greater than that of the two boron doping layers (not shown) sandwiching the indium layer.
  • The n-type semiconductor layer 303 is an epitaxial layer formed on the substrate 301, wherein the epitaxial layer is disposed over and in contact with the barrier 302.
  • The source 305 comprises an p-type region 305 b and two n-type regions 305 a and 305 c disposed in an p-type well 310 formed in the n-type semiconductor layer 303, wherein the p-type well 310 comprises an p-body region (referred as P-Body region) 310 a, a high-voltage drift p-well (referred as HVDPW region) 310 b. The P-Body region 310 a is disposed in the HVDPW region 310 b, and the two n-type region 305 a and 305 c and the p-type region 305 b are disposed in the P-Body region 310 a, wherein the two n-type regions 305 a and 305 c are separated by the p-type region 305 b. In the present embodiment, the p-type region 305 b is a high concentration p-type doping region (referred as P+ region 305 b), these two n-type region 305 a and 305 c are high concentration n-type doping regions (referred as N+ region 305 a and 305 c); the P+ region 305 b has a doping concentration substantially greater than that of the P-Body region 310 a, and the concentration of the P-Body region 310 a is substantially greater than that of the HVDPW region 310 b.
  • The drain 306 is formed in the n-type semiconductor layer 303 and has a high concentration n-type doping region (referred as N+ region) 306 a and an n-type drift region (referred as N-Drift region) 306 b, wherein the N+ region 306 a is disposed in the N-Drift region 306 b and has a doping concentration substantially greater than that of the N-Drift region 306 b. Besides, the N-Drift region 306 b has a doping concentration substantially greater than that of the n-type semiconductor layer 303.
  • The drain 316 is formed in the n-type semiconductor layer 303 and has a high concentration n-type doping region (referred as N+ region) 316 a and an n-type drift region (referred as N-Drift region) 316 b, wherein the N+ region 316 a is disposed in the N-Drift region 316 b and has a doping concentration substantially greater than that of the N-Drift region 316 b. Besides, the N-Drift region 316 b has a doping concentration substantially greater than that of the n-type semiconductor layer 303.
  • The gate oxide layer 309 is blanket over the source 305 and a portion of the n-type semiconductor layer 303. The FOX 307 is formed in the n-type semiconductor layer 303 and protrudes beyond a top surface 303 a of the n-type semiconductor layer 303. The gates 304 and 314 are respectively disposed on the gate oxide layer 309 and partially straddle over the FOX 307 by which the gate 304 and the drain 306 are separated from each other and so do the gate 314 and the drain 316.
  • The guard ring 308 is a p-type doping region extending downward in to the n-type semiconductor layer 303 from the top surface 303 a of the n-type semiconductor layer 303 in a manner of getting in touch with the barrier layer 302 and surrounding the source 305 and the drains 306 and 316. Wherein, the guard ring 308 is electrically connected to the source 305 via a conductive structure 311, such as an interconnection or a wire. In some embodiments of the present invention, the guard ring 308 comprises a high concentration p-type doping region (referred as P+ region) 308 a, a p-type well (referred as P-Well region) 308 b, a p-type drift region (referred as P-Drift region) 308 c and a high-voltage drift p-well (referred as HVDPW region) 308 d.
  • Wherein the P+ region 308 a extends downwards in to the P-Well region 308 b from the top surface 303 a of the n-type semiconductor layer 303; the P-Well region 308 b is disposed in the P-Drift region 308 c; and the P-Drift region 308 c is disposed in the HVDPW region 308 d. Besides, the P+ region 308 a has a doping concentration substantially greater than that of the P-Well region 308 b; the doping concentration of the P-Well region 308 b is substantially greater than that of the P-Drift region 308 c; and the doping concentration of the P-Drift region 308 c is substantially greater than that of the HVDPW region 308 d.
  • Since the guard ring 308 and the barrier layer 302 has identical polarity and both of them are electrically connected to the source 305, thus an isolation structure with an electric potential identical to that of the source 305 is formed in the n-type semiconductor layer 303, so as to prevent parasitic circuit elements formed in the n-type semiconductor layer 303 from latching up with other integrated circuit element (not shown). Meanwhile the on-resistance of the LDMOS transistor structure 300 can be decreased, and the breakdown voltage of the LDMOS transistor structure 300 can be increased, and the performance of the LDMOS transistor structure 300 can be improved.
  • In accordance with the aforementioned embodiments of the present invention, a LDMOS transistor structure is provided, wherein a guard ring is formed in a semiconductor layer in a manner of getting in touch with a barrier layer disposed in the semiconductor layer and surrounding a source and a drain. Since the guard ring and the barrier layer has the same polarity and both of them are electrically connected with the source, thus an isolation structure with an electric potential identical to that of the source is formed in a manner of surrounding the LDMOS transistor, so as to prevent the parasitic circuit elements formed in the LDMOS transistor device from latching up with other integrated circuit element, such that, the device punch-through problems due to critical dimension shrinkage can be solved. Meanwhile the on-resistance of the LDMOS transistor device can be decreased, the breakdown voltage of the LDMOS transistor device can be increased, and the performance of the LDMOS transistor device can be improved.
  • While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures.

Claims (14)

1. A lateral diffusion metal-oxide-semiconductor (LDMOS) transistor structure comprising:
a barrier layer with a first polarity consisting of two first doping layers sandwiching a second doping layer disposed in a substrate, wherein the second doping layer has a doping concentration greater than that of the two first doping layers;
a semiconductor layer with a second polarity, disposed on the barrier layer;
a source, having a first polarity region and a second polarity region disposed in the semiconductor layer;
a first drain, disposed in the semiconductor layer and having a drift region with the second polarity; and
a guard ring with the first polarity, extending downward from a surface of the semiconductor layer in a manner of getting in touch with the barrier layer and surrounding the source and the drain, and electrically connected to the source.
2. The LDMOS transistor structure according to claim 1, wherein the first polarity is n-type conductivity; and the second polarity is p-type conductivity.
3. The LDMOS transistor structure according to claim 2, wherein the barrier layer comprises a tri-layer phosphorous/antimony/phosphorous (P/Sb/P) doping structure.
4. The LDMOS transistor structure according to claim 2, wherein the first polarity region and a second polarity region are disposed in an n-type well which is disposed in the semiconductor layer in a manner of getting in touch with the barrier layer.
5. The LDMOS transistor structure according to claim 4, wherein the n-type well comprises an n-body region and a high-voltage drift N-well (HVDNW) region; the first polarity region and a second polarity region are disposed in the n-body region, and the n-body region is disposed in the HVDNW region.
6. The LDMOS transistor structure according to claim 1, wherein the drift region has a doping concentration substantially greater than that of the semiconductor layer.
7. The LDMOS transistor structure according to claim 1, further comprising a first gate disposed on the semiconductor layer and partially straddling over a first field oxide (FOX), wherein the first gate and the first drain are separated from each other by the first FOX.
8. The LDMOS transistor structure according to claim 7, further comprising:
a second drain, disposed in the semiconductor layer; and
a second gate, disposed over the semiconductor layer and partially straddling over a second FOX, wherein the second gate and the second drain are separated from each other by the second FOX.
9. The LDMOS transistor structure according to claim 8, wherein the first drain and the second drain constitute a symmetric structure against the source, and the source serves as a common source thereof.
10. The LDMOS transistor structure according to claim 9, wherein the second polarity region is separated into two parts by the first polarity region.
11. The LDMOS transistor structure according to claim 1, wherein the guard ring has a concentration decreasing gradually from a top surface of the semiconductor layer to the barrier.
12. The LDMOS transistor structure according to claim 1, the guard ring is electrically connected to the source via an interconnection or a wire.
13. The LDMOS transistor structure according to claim 1, wherein the first polarity is p-type conductivity; and the second polarity is n-type conductivity.
14. The LDMOS transistor structure according to claim 13, wherein the barrier layer comprises a tri-layer boron/Indium/boron (B/In/B) doping structure.
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