US20130128908A1 - Diode pumped solid state opto-mechanically optimized green laser - Google Patents

Diode pumped solid state opto-mechanically optimized green laser Download PDF

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Publication number
US20130128908A1
US20130128908A1 US13/680,587 US201213680587A US2013128908A1 US 20130128908 A1 US20130128908 A1 US 20130128908A1 US 201213680587 A US201213680587 A US 201213680587A US 2013128908 A1 US2013128908 A1 US 2013128908A1
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crystal
spacer
laser
yvo4
assembly
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Abandoned
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US13/680,587
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Robert D. Battis
Wayne Armstrong
John Magno
Tom Frobose
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Laser Energetics Inc
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Laser Energetics Inc
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Priority to US13/680,587 priority Critical patent/US20130128908A1/en
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Abandoned legal-status Critical Current

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K31/00—Medicinal preparations containing organic active ingredients
    • A61K31/33—Heterocyclic compounds
    • A61K31/395—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins
    • A61K31/40—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having five-membered rings with one nitrogen as the only ring hetero atom, e.g. sulpiride, succinimide, tolmetin, buflomedil
    • A61K31/4015—Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having five-membered rings with one nitrogen as the only ring hetero atom, e.g. sulpiride, succinimide, tolmetin, buflomedil having oxo groups directly attached to the heterocyclic ring, e.g. piracetam, ethosuximide
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
    • A61K31/00—Medicinal preparations containing organic active ingredients
    • A61K31/33—Heterocyclic compounds
    • A61K31/335—Heterocyclic compounds having oxygen as the only ring hetero atom, e.g. fungichromin
    • A61K31/34—Heterocyclic compounds having oxygen as the only ring hetero atom, e.g. fungichromin having five-membered rings with one oxygen as the only ring hetero atom, e.g. isosorbide
    • A61K31/341—Heterocyclic compounds having oxygen as the only ring hetero atom, e.g. fungichromin having five-membered rings with one oxygen as the only ring hetero atom, e.g. isosorbide not condensed with another ring, e.g. ranitidine, furosemide, bufetolol, muscarine
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P19/00—Drugs for skeletal disorders
    • A61P19/02—Drugs for skeletal disorders for joint disorders, e.g. arthritis, arthrosis
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P19/00—Drugs for skeletal disorders
    • A61P19/08—Drugs for skeletal disorders for bone diseases, e.g. rachitism, Paget's disease
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P29/00—Non-central analgesic, antipyretic or antiinflammatory agents, e.g. antirheumatic agents; Non-steroidal antiinflammatory drugs [NSAID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/086—One or more reflectors having variable properties or positions for initial adjustment of the resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]

Definitions

  • the invention concerns laser apparatus. More particularly, the invention concerns diode pumped solid state (“DPSS”) lasers and design of laser elements to achieve independent crystal phasing, spacing and output coupler alignment.
  • DPSS diode pumped solid state
  • Diode pumped solid state lasers are used in industry to provide an inexpensive yet powerful laser source. In applications, it is often desirable to convert the wavelength of the laser light produced by the laser diode to a different wavelength. This traditionally entails the use of one or more crystals and an output coupler aligned for phasing and cavity tuning i.e., rotation and spacing relative to the laser diode.
  • a laser diode output at 808 nm it is desirable to convert a laser diode output at 808 nm to a 532 nm green laser. This may be done by passing the output light through first a Nd:YVO4 crystal to convert the light to 1064 nm, and then passing it through a KTP crystal to convert to the desired 532 nm laser, which then would exit through an output coupler.
  • the Nd:YVO4 and KTP crystals are typically packaged in mounts which are fixed into optimal positions in rotation and distance using shunts and glue.
  • This approach has several drawbacks. For example, if the positioning of the shunts is shifted, such as by a shock to the device in which the laser is mounted, laser output can be adversely affected and a repair would require dismantling and replacing the shunts, which may further damage the device.
  • the crystals and other elements typically cannot be independently aligned for crystal rotation, pitch and yaw adjustment and X-Y-Z orthogonal adjustments.
  • An aspect of the invention provides a laser apparatus including a laser diode, an Nd:YVO4 crystal, a KTP crystal, and an output coupler.
  • the laser diode, Nd:YVO4 crystal, KTP crystal, and output coupler are aligned in order in an assembly to provide an optical path.
  • the Nd:YVO4 crystal is held at a predetermined distance from the laser diode on an adjustable rotating mount, the predetermined distance maintained by a spacer.
  • the adjustable rotating mount and spacer together form an Nd:YVO4 assembly.
  • the the Nd:YVO4 crystal is optimally rotated to a position to maximize output of the laser diode through the Nd:YVO4 crystal to produce 1064 nm radiation, the position fixed by a plurality of adjustment screws attached to the adjustable rotating mount.
  • the laser apparatus further provides for the KTP crystal to be held at a second predetermined distance from the Nd:YVO4 crystal on a second rotating mount.
  • the second predetermined distance is maintained by a second spacer, the second rotating mount and second spacer having a plurality of rods and nuts fastened thereto for adjusting the pitch and yaw of the KTP crystal.
  • the second spacer includes a plurality of spring loaded adjustment screws for adjusting the second predetermined distance.
  • the Nd:YVO4 crystal and KTP crystal may each be mounted in a one or two part mount.
  • the laser apparatus includes an output coupler held by an output coupler assembly.
  • the output coupler assembly holds the output coupler at a third predetermined distance from the KTP crystal on a third pitch and yaw and Z adjustment mount, the third predetermined distance maintained by a third spacer.
  • the third rotating mount and third spacer have rods and nuts fastened thereto for adjusting the pitch and yaw of the output coupler.
  • spring loaded adjustment screws may be used to provide for adjustment and locking into position of any or all of the Nd:YVO4 crystal, KTP crystal and/or output coupler.
  • adjustable attachment such as, but not limited to clips, slides, pins, and the like are also envisioned.
  • FIG. 1 is a block diagram of an exemplary 532 nm diode pumped solid state (DPSS) laser that is useful for understanding the present invention.
  • DPSS diode pumped solid state
  • FIG. 2 is a perspective view of an exemplary DPSS laser assembly that is useful for understanding the present invention.
  • FIG. 3 a is a perspective view of an exemplary 3 piece ND:YVO4 assembly that is useful for understanding the present invention.
  • FIG. 3 b is a perspective view of an exemplary 2 piece ND:YVO4 assembly that is useful for understanding the present invention.
  • FIG. 4 a is a perspective view of an exemplary 5 piece KTP assembly that is useful for understanding the present invention.
  • FIG. 4 b is a perspective view of an exemplary 4 piece KTP assembly that is useful for understanding the present invention.
  • FIG. 5 is a perspective view of an exemplary output coupler assembly that is useful for understanding the present invention.
  • exemplary is used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects or designs. Rather, use of the word exemplary is intended to present concepts in a concrete fashion.
  • the term “or” is intended to mean an inclusive “or” rather than an exclusive “or”. That is, unless specified otherwise, or clear from context, “X employs A or B” is intended to mean any of the natural inclusive permutations. That is if, X employs A; X employs B; or X employs both A and B, then “X employs A or B” is satisfied under any of the foregoing instances.
  • the present invention advantageously provides physical designs of a diode pumped solid state (“DPSS”) laser where the elements can be provided in a small compact package that incorporates precision techniques for aligning all electro-optic elements, including crystal rotation, pitch and yaw adjustments and X-Y-Z orthogonal adjustments.
  • DPSS diode pumped solid state
  • the present invention will be described here with reference to a DPSS 532 nm GREENSTAR(TM) laser by Laser Energetics, Inc. It is envisioned that the apparatus and techniques described herein may be useful in other laser devices.
  • a typical 532 nm solid state laser consists of the elements identified in FIG. 1 , and in the order indicated.
  • An 808 nm laser diode 100 is powered (power supply not depicted) to generate a laser output which is passed through a focusing/colliminating Doric lens 110 .
  • the output light passes through a ND:YVO4 crystal 120 to convert the 808 nm laser light to 1064 nm.
  • the 1064 nm light then passes through a KTP crystal 130 where it is converted to 532 nm for output through the output coupler 140.
  • the Laser Energetics, Inc.GreenStarTM II Diode Pumped Solid State (DPSS) laser is constructed using the elements of FIG. 1 in the assembly shown in FIG. 2 .
  • the optical coatings for the four optical elements are listed in Table 1, as one preferred embodiment of the laser/cavity design.
  • the exemplary compact design shown in FIG. 2 nests the elements of FIG. 1 in a unique and clever way to achieve optimal laser performance by incorporating alignment attributes of the ND:YV04 crystal, KTP crystal and OC as herein described.
  • an embodiment of DPSS 532 nm laser incorporates a laser diode heat sink 200 , upon which is mounted a platform 210 including a laser diode 100 and, optionally a Doric collimating lens 110 .
  • the collimating lens 110 may be provided as a separate component or as an integral part of the laser diode 100 .
  • Attached to the platform 210 is the ND:YVO4 assembly 220 , which includes a ND:YVO4 crystal 120 within The ND:YVO4 assembly 220 allows adjustments of distance and phase/rotation of the ND:YVO4 crystal 120 relative to the diode laser.
  • Attached to the ND:YVO4 assembly 220 is the KTP assembly 230 , containing the KTP crystal 130 , positioned with screws and springs 256 to allow pitch and yaw adjustment.
  • the KTP assembly 230 allows independent rotation of the KTP crystal relative to the ND:YVO4 assembly 220 .
  • the spacer 240 positioned above the KTP assembly is locked into position by nuts and rods 260 making its postion independent of the KTP assembly 230 .
  • the independent postioning of the spacer 240 allows independent positioning of the coupler (“OC”) assembly 250 relative to the KTP assembly 230 . This independence is a critical feature of this invention.
  • the OC assembly 250 preferably includes an output coupler 140 within In one embodiment of the invention, the OC assembly 250 is aligned and set in place using screws and springs 256 .
  • FIG. 3 a in building a 532 mn DPSS laser, in one embodiment of the present invention using a 3 piece NH:YVO4 assembly 220 , it is necessary to start with a 808 nm laser diode which is used as a pump of a Nd:YVO4 crystal. In this application it is critical to match the phase/rotational polarization of the 808 nm laser diode with the c axis—polarization—of the Nd:YVO4 crystal.
  • FIG. 3 b an embodiment of the present invention using a 2 piece ND:YVO4 assembly is illustrated.
  • the ND:YVO4 assembly 220 has been replaced by a ND:YVO4 mount 225 b with a built in distance adjuster/spacer.
  • This embodiment has the advantage of fewer moving parts.
  • the 360° rotation of the ND:YVO4 crystal is maintained but 226 ND:YV04 Distance Adjustor has been eliminated and 225 ND:YVO4 Mount has been redesigned as the 225 b ND:YV04 Mount to force a preset minimum height between the optional Doric lens and ND:YV04 crystal surface.
  • the diameter of the 225 b ND:YV04 Mount over the 225 ND:YV04 Mount has been increased to mate with the hole in the 210 Platform. Rotation of the 225 b ND:YV04 Mount is accomplished using a standard pin tool pressing on the top serrated edge of the 225 b ND:YV04 Mount. Platform side set screws secure the 225 b ND:YV04 Mount final rotation position.
  • the KTP crystal 130 which follows the ND:YV04 crystal, is provided the same adjustment capability via a KTP assembly 230 in rotation and distance, but independent of the ND:YV04.
  • the KTP mount assembly 230 has a pitch and yaw capability through adjustment of the assembly securing nuts at different heights on the rods 260 , FIG. 2 .
  • the output coupler (OC) which follows the KTP crystal is housed in mount [ 255 FIG. 5 ] and rests on a spacer [ 240 ] which isolates the assembly [ 250 ] from the crystals below and gives it independent adjustment of spacing [ 256 ] as well as pitch and yaw [ 256 ].
  • the 360° rotation of the KTP crystal 227 is maintained, as well as pitch and yaw control using the screws and springs 256 visible in FIG. 2 .
  • the KTP distance adjustor 229 has been eliminated and the ND:YV04 mount 228 has been redesigned as the mount 228 b to force a preset minimum height above the ND:YV04 crystal 130 below it.
  • the diameter of the ND:YV04 mount 228 b over the ND:YV04 mount 228 has been increased to mate with the hole in the KTP assembly 230 .
  • Rotation of the KTP mount 228 b is accomplished using a standard pin tool pressing on the top serrated edge of the KTP mount 228 b .
  • KTP assembly 230 side set screws secure the KTP mount 228 b final rotation position.
  • a further feature of the GreenStarTM II DPSS Laser is the ease of adjustment of the KTP and OC using springs force 256 and with the ability to lock-down their position for permanent alignment to resist vibration and shock in field use. Lock-down is accomplished by opposing forces of nuts and screws or just screws.
  • the OC assembly 250 incorporates an OC 140 as well as screws and springs 256 for adjusting the distance, pitch and yaw of the OC 140 .

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US13/680,587 2011-11-18 2012-11-19 Diode pumped solid state opto-mechanically optimized green laser Abandoned US20130128908A1 (en)

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TWI598332B (zh) * 2016-05-05 2017-09-11 葡萄王生技股份有限公司 以高效能離心分配層析儀純化馬來酸衍生物之製造方法
WO2021102124A1 (en) * 2019-11-20 2021-05-27 Yale University Methods of inducing or enhancing farnesoid x receptor (fxr)-mediated transcriptional response

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US4723257A (en) * 1986-05-19 1988-02-02 Spectra-Physics, Inc. Laser diode pumped solid state laser with miniaturized laser head
US4872177A (en) * 1985-05-01 1989-10-03 Spectra-Physics Laser diode pumped solid state laser
US20030072338A1 (en) * 2001-10-12 2003-04-17 Masayuki Momiuchi Laser oscillation apparatus
US20040057490A1 (en) * 2002-09-23 2004-03-25 Litton Systems, Inc. Microlaser cavity assembly and associated packaging method

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US4256108A (en) 1977-04-07 1981-03-17 Alza Corporation Microporous-semipermeable laminated osmotic system
US4160452A (en) 1977-04-07 1979-07-10 Alza Corporation Osmotic system having laminated wall comprising semipermeable lamina and microporous lamina
US4265874A (en) 1980-04-25 1981-05-05 Alza Corporation Method of delivering drug with aid of effervescent activity generated in environment of use
CN1195843C (zh) * 2001-08-10 2005-04-06 吴丽玉 樟芝的固体培养方法,所得固体培养物及其产品与用途
US7109232B2 (en) 2004-03-08 2006-09-19 Simpson Biotech Co., Ltd. Compounds from Antrodia camphorata having anti-inflammatory and anti-tumor activity
CN100386316C (zh) * 2004-03-10 2008-05-07 善笙生物科技股份有限公司 来自牛樟芝菌丝体的化合物和混合物或组合物及其用途
ATE513823T1 (de) 2004-08-17 2011-07-15 Simpson Biotech Co Ltd Mischung und verbindungen von mycelien von antrodia camphorata und deren verwendung

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872177A (en) * 1985-05-01 1989-10-03 Spectra-Physics Laser diode pumped solid state laser
US4723257A (en) * 1986-05-19 1988-02-02 Spectra-Physics, Inc. Laser diode pumped solid state laser with miniaturized laser head
US20030072338A1 (en) * 2001-10-12 2003-04-17 Masayuki Momiuchi Laser oscillation apparatus
US20040057490A1 (en) * 2002-09-23 2004-03-25 Litton Systems, Inc. Microlaser cavity assembly and associated packaging method

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TWI531366B (zh) 2016-05-01
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US20130129772A1 (en) 2013-05-23
TW201343161A (zh) 2013-11-01

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