US20130092424A1 - Stress buffer layer and method for producing same - Google Patents
Stress buffer layer and method for producing same Download PDFInfo
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- US20130092424A1 US20130092424A1 US13/638,518 US201113638518A US2013092424A1 US 20130092424 A1 US20130092424 A1 US 20130092424A1 US 201113638518 A US201113638518 A US 201113638518A US 2013092424 A1 US2013092424 A1 US 2013092424A1
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- base material
- stress buffer
- oxide base
- internal electrode
- stress
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/007—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for elastomeric connecting elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
- H01R13/2414—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means conductive elastomers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10962—Component not directly connected to the PCB
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a stress buffer layer, and more particularly to a stress buffer layer and a method for producing the stress buffer layer, suitable for release of stress acting on a joint portion or the like between a printed board and a chip component and also suitable for improvement in reliability in mounting a component.
- an interposer may be placed between the chip component and the printed board.
- different constituent materials are used for the printed board, the interposer and the chip component; accordingly, the magnitude of thermal expansion of these parts during a process or under use environment conditions differs from each other. Consequently, stress acts exclusively on solder joint portions in which the printed board, the interposer and the chip component are connected to each other through soldering; thus, poor connection caused by cracks or the like may occur. Therefore, there is a need for a structure which can release the stress acting on the solder joint portion.
- Patent Literature 1 discloses a technique for releasing this stress acting on the solder joint portion.
- a semiconductor package board described in Patent Literature 1 is characterized by including a first circuit conductive layer electrically connected to a semiconductor device, a second circuit conductive layer having a connecting terminal used for electrical connection with an external component, an insulating layer disposed between the first circuit conductive layer and the second circuit conductive layer, and a via which is a through hole in the insulating layer, used for electrical connection of the first circuit conductive layer and the second circuit conductive layer, and also characterized in that the insulating layer has a dual-layer structure, and Young's modulus of a second insulating layer disposed on the side of the second circuit conductive layer is smaller than that of a first insulating layer disposed on the side of the first circuit conductive layer.
- Patent Literature 2 discloses another example.
- an electronic component mounting structure is used in which an electronic component chip having a plurality of protrusion electrodes distributed on the whole mounting surface thereof is mounted via the protrusion electrodes on a substrate.
- An object of the invention is to release stress produced in the protrusion electrodes caused by temperature rise during the operation of the electronic component and thereby improve the reliability of the electronic component; and a disclosed solution is that the protrusion electrodes are arranged so that the distribution density of the protrusion electrodes becomes higher in a direction from the center to the outer side of the mounting surface of the electronic component chip.
- solder bump is given as an illustrative example of the protrusion electrode.
- Patent Literature 3 discloses a mounting structure in which a connecting terminal of a semiconductor device is electrically connected through a connecting member to a circuit board, and the connecting member has a conductive protrusion including a columnar portion, and the cross-sectional area of the columnar portion being the result of cutting the columnar portion by a plane parallel to the surface of the semiconductor device is smaller than the surface area of the connecting terminal of the semiconductor device.
- the circuit board and the semiconductor device are electrically connected through the conductive portion of the connecting member.
- Patent Literature 1 Japanese Patent Laid-Open No. 2008-244311 (FIG. 1)
- Patent Literature 2 Japanese Patent Laid-Open No. 2008-227020 (FIG. 1)
- Patent Literature 3 Japanese Patent Laid-Open No. 2008-205184 (FIG. 2)
- Patent Literature 1 and Patent Literature 2 have the following problems. That is, a problem with the techniques described in Patent Literature 1 and Patent Literature 2 is that the effect of releasing stress acting on the joint portion is indirectly achieved and thus the stress on the joint portion cannot be directly released; consequently, the stress releasing effect is small.
- a problem with the technique described in Patent Literature 3 is that the member used for releasing the stress is as large as electrodes and thus a displacement sufficient for releasing the stress cannot be produced; consequently, the stress acting on the joint portion is not completely absorbed.
- An embodiment of the present invention provides a stress buffer layer which satisfactorily releases stress acting on the joint portion, allowing an improvement in mounting reliability.
- a stress buffer layer is one on which an electronic component can be mounted, and is characterized by including a through electrode layer having many internal electrodes obtained by filling a conductive material in many holes of a plate-like base material, the many holes penetrating through the base material in a direction of thickness, the plate-like base material being constituted by replacing at least a part of a porous oxide base material formed by anodic oxidation of valve metal with an insulating material having a Young's modulus smaller than the oxide base material.
- a stress buffer layer is characterized in that an insulating material having a Young's modulus smaller than the oxide base material is disposed close to both of the main surfaces of the plate-like base material. Another embodiment is characterized in that the insulating material having a smaller Young's modulus is resin. Another embodiment is characterized by including external conductive layers which are disposed on both of the main surfaces of the through electrode layer and which are conductively connected to each other via at least a part of the many internal electrodes. Another embodiment is characterized in that a flexible layer of resin covering that end portion of the internal electrode which is not connected to the external conductive layer is disposed on both of the main surfaces of the through electrode layer.
- An embodiment of the present invention provides a stress buffer layer which satisfactorily releases stress acting on a joint portion, allowing an improvement in mounting reliability.
- FIG. 1 is a view illustrating Embodiment 1 of the present invention
- FIG. 1(A) is a view illustrating a state in which the embodiment is applied to mounting of a component
- FIG. 1(B) is a main cross-sectional view of a stress buffer sheet according to the embodiment
- FIG. 1(C) is a cross-sectional view showing an operation of the stress buffer sheet.
- FIG. 2 is a cross-sectional view illustrating an example of production process of the stress buffer sheet according to Embodiment 1.
- FIG. 3 is an SEM image showing a nanopillar array of metal formed in the process of FIG. 2(E) .
- FIG. 4 is a view illustrating an interposer according to Embodiment 2 of the present invention
- FIG. 4(A) is a main cross-sectional view
- FIG. 4(B) is a cross-sectional view showing a state where stress is applied.
- FIG. 5 is a view illustrating an example of production process of the interposer according to Embodiment 2.
- FIG. 6 is a cross-sectional view illustrating an example of circuit module using the interposer according to Embodiment 2.
- FIG. 1(A) is a view illustrating a state in which the embodiment is applied to mounting of a component
- FIG. 1(B) is a main cross-sectional view of a stress buffer sheet according to the embodiment
- FIG. 1(C) is a cross-sectional view showing an operation of the stress buffer sheet.
- FIG. 2 is a cross-sectional view illustrating an example of production process of the stress buffer sheet according to the present embodiment.
- FIG. 3 is an SEM image showing a nanopillar array of metal formed in the process of FIG. 2(E) .
- the stress buffer sheet 10 is used, for example as illustrated in FIG. 1(A) , as a joint member between terminal units 22 A and 22 B of a wiring board 20 and terminal units 24 A and 24 B of an electronic component 24 .
- the stress buffer sheet 10 absorbs or releases stress caused by the difference of thermal expansion coefficient between the above members when heat is produced in a process for mounting the electronic component 24 on the wiring board 20 or under use environment conditions.
- the stress buffer sheet 10 includes, as illustrated in FIG. 1(B) , a through electrode layer 13 having resin 12 filled between many columnar internal electrodes (metal pillars) 14 and external conductive layers 16 A and 16 B disposed on the front and rear main surfaces (i.e., top and bottom surfaces) of the through electrode layer 13 .
- the many internal electrodes 14 are formed, as described later, using a porous oxide base material 30 (refer to FIG. 2 ) produced by anodic oxidation of valve metal; the oxide base material 30 is removed after the internal electrodes 14 have been formed, and the resin 12 having a Young's modulus smaller than the oxide base material 30 is filled as a replacement.
- the internal electrode 14 has a high aspect ratio and a remarkable flexibility.
- the term “aspect ratio” of the internal electrode 14 means the ratio of diameter to length (thickness) of the internal electrode 14 .
- the resin 12 is also small in Young's modulus and can be deformed together with the internal electrode 14 . Accordingly, in a structure having the wiring board 20 and the electronic component 24 connected through the stress buffer sheet 10 , when stress acts on the joint portion, the internal electrode 14 and the resin 12 , i.e., the whole of the through electrode layer 13 is, as illustrated in FIG. 1(C) , deformed as indicated by the arrow in FIG. 1(C) and absorbs the stress.
- an oxide base material 30 is, as illustrated in FIG. 2(A) , prepared which has many holes 32 of a high aspect ratio produced by anodic oxidation of valve metal.
- Al aluminum
- a seed layer 34 is, as illustrated in FIG. 2(B) , formed on the main surface 30 B of the oxide base material 30 .
- plated electrical conductor is, as illustrated in FIG.
- the internal electrode 14 does not need to be formed in all of the many holes 32 of the oxide base material 30 ; it is sufficient to achieve an electrical resistance satisfactorily low according to applications between the top and bottom surfaces of the stress buffer sheet 10 after forming of the stress buffer sheet 10 .
- Both ends of the internal electrode 14 are, as evident from FIG. 2(C) , formed so as to be substantially on the same plane as the top and bottom surfaces of the oxide base material 30 .
- the seed layer 34 is removed at the position indicated by the broken line in FIG. 2(C) ; and external conductive layers 16 A and 16 B are, as illustrated in FIG.
- the external conductive layers 16 A and 16 B are provided on at least one of the two main surfaces 30 A and 30 B of the oxide base material 30 so as to be electrically connected to the internal electrode 14 .
- the internal electrode 14 is constituted so as to have a surface substantially on the same plane as the two main surfaces 30 A and 30 B of the oxide base material 30 ; thus, when the external conductive layers 16 A and 16 B are placed on the two main surfaces 30 A and 30 B of the oxide base material 30 , electrical connection with the internal electrode 14 is achieved. Then, when the oxide base material 30 is, as illustrated in FIG.
- FIG. 2(E) selectively removed, a metal nanopillar array is formed which includes the internal electrodes 14 having a diameter of several dozen to several hundred nm and a length (thickness) of several hundred nm to several dozen ⁇ m.
- FIG. 2(E) illustrates an example in which the oxide base material 30 is wholly removed, but only a part of the oxide base material 30 may be removed.
- FIG. 3 shows an SEM image of metal nanopillar array formed by using Ni as the plated electrical conductor and using NaOH as chemical solution used for selective removal in the process of FIG. 2(E) .
- the resin 12 is impregnated in a void space 36 (i.e., the part being the result of removing the oxide base material 30 ) illustrated in FIG. 2(E) , whereby the stress buffer sheet 10 is produced.
- the oxide base material 30 removed in the process illustrated in FIG. 2(E) is alumina which has a Young's modulus of about 400 GPa.
- the Young's modulus of the resin 12 filled in the void space 36 in the process of FIG. 2(F) is 0.01 to 1 GPa for epoxy, 1 to 5 GPa for Silicone resin, 1 to 5 GPa for polyimide, 1 to 5 GPa for BCB, for example. In this way, the resin 12 has a Young's modulus smaller than the oxide base material 30 and thus does not impede deformation of the internal electrode 14 having flexibility and can be elastically deformed integrally with the internal electrode 14 .
- the stress buffer sheet 10 is mounted, for example, on an external connection terminal unit (the terminal units 24 A and 24 B or the like of the electronic component 24 of FIG. 1 ) of a semiconductor chip, and the resultant product is provided for a user.
- an external connection terminal unit the terminal units 24 A and 24 B or the like of the electronic component 24 of FIG. 1
- the stress buffer sheet 10 deforms, as illustrated in FIG. 1(B) , and absorbs the difference, so that an excellent terminal connection is ensured.
- the resin 12 examples include epoxy, Silicone resin, polyimide and BCB (benzocyclobutene resin).
- the external conductive layers 16 A and 16 B are formed by solder.
- a low-resistance metal on which plating can be made and which has a high ductility is preferably used; for example, Au, Cu and Ag.
- the internal electrode 14 may be directly formed on a pad (terminal unit) of the chip.
- another electrical conductor may be arranged between the internal electrode 14 and the external conductive layers 16 A and 16 B.
- the effective cross-sectional area for current path is half to one third the area of the sheet, for example; but, since the joint is performed using a plurality of the internal electrodes 14 made of metal, a satisfactorily low resistance value is ensured.
- the overall thickness of the stress buffer sheet 10 is several hundred nm to several dozen ⁇ , for example; and the aspect ratio (AR ratio) of the internal electrode 14 is several dozen to several thousand.
- the porous oxide base material 30 being the result of anodic oxidation of valve metal is used as a mold, and many internal electrodes 14 penetrating through the oxide base material 30 in a direction of thickness are formed and thereafter, the oxide base material 30 is selectively removed to form a metal nanopillar array and then the resin 12 having a Young's modulus smaller than the oxide base material 30 is filled in the void space 36 of the metal nanopillar array, whereby the through electrode layer 13 is provided. Then, the wiring board 20 and the electronic component 24 are joined via the external conductive layers 16 A and 16 B disposed on the front and rear surfaces of the through electrode layer 13 .
- FIG. 4 is a view illustrating an interposer according to the present embodiment
- FIG. 4(A) is a main cross-sectional view
- FIG. 4(B) is a cross-sectional view showing a state where stress is applied.
- FIG. 5 is a view illustrating an example of production process of the interposer according to the present embodiment.
- FIG. 6 is a cross-sectional view illustrating an example of circuit module using the interposer according to the present embodiment.
- the same reference characters are applied to constituent parts identical or corresponding to those of Embodiment 1 described above.
- An interposer 50 according to the present embodiment includes, as illustrated in FIG.
- the through electrode layer 52 includes a porous oxide base material 30 being the result of anodic oxidation of valve metal, and stress buffer units 54 A and 54 B, formed of a resin 12 , disposed close to the front and rear surfaces (top and bottom surfaces) of the oxide base material 30 .
- the resin 12 having a Young's modulus smaller than the oxide base material 30 , does not impede flexibility of the internal electrode 14 ; thus, upon receiving stress, the stress buffer units 54 A and 54 B deform as illustrated in FIG. 4(B) and the stress is absorbed or released.
- FIG. 5 An example of production process according to the present embodiment will be described with reference to FIG. 5 .
- many internal electrodes 14 penetrating through the oxide base material 30 in a direction of thickness are formed using many holes of the oxide base material 30 being the result of anodic oxidation of valve metal.
- Materials similar to those of Embodiment 1 are used as the materials for the oxide base material 30 and the internal electrodes 14 .
- the front and rear main surfaces 30 A and 30 B of the oxide base material 30 are, as illustrated in FIG.
- the internal electrode 14 is constituted so that the end portions 14 A and 14 B of the internal electrode 14 are substantially on the same plane as the surface of the resin 12 provided on the surface of the base material.
- external conductive layers 56 and 58 are, as illustrated in FIG. 5(E) , formed on a part of the main surfaces 52 A and 52 B so that a part of the plurality of internal electrodes 14 is electrically connected on the front and rear of the through electrode layer 52 , whereby the interposer 50 according to the present embodiment is provided.
- a material similar to that of Embodiment 1 is used for the resin 12 ; and Cu, Ni, solder, or multilayer electrode of these materials is used for the external conductive layers 56 and 58 , for example.
- the overall thickness of the interposer 50 produced as described above is several dozen ⁇ m to several hundred ⁇ m, for example; and the thickness of the stress buffer units 54 A and 54 B is several hundred nm to several dozen ⁇ m.
- a process may be added by which, in order to protect the internal electrode 14 not connected to the external conductive layers 56 and 58 , firstly, the main surfaces 52 A and 52 B of the through electrode layer 52 is coated with flexible resin not illustrated in the drawings before the external conductive layers 56 and 58 are formed, and thereafter opening windows are formed only in that part of the main surfaces 52 A and 52 B in which the external conductive layers 56 and 58 are arranged.
- a circuit module 60 illustrated in FIG. 6 includes the interposer 50 according to the present embodiment and electronic components 24 and 26 mounted on the surface of the interposer 50 .
- the interposer 50 includes an insulating layer 62 made of flexible resin on the front and rear main surfaces 52 A and 52 B of the through electrode layer 52 ; the insulating layer 62 is for protecting the internal electrode 14 not connected to the external conductive layers 56 and 58 .
- the external conductive layers 56 on the front side of the interposer 50 are connected via joint units 25 A, 25 B, 26 A and 26 B to terminal units 24 A and 24 B of the electronic component 24 and terminal units (not illustrated) of the electronic component 26 .
- Solder is used for the joint units 25 A, 25 B, 26 A and 26 B, for example.
- the external conductive layers 58 on the rear side of the interposer 50 are used as wiring or electrode pad for connection with the internal electrodes 14 connected to the electronic components 24 and 26 .
- the external conductive layer 58 has a function of land for mounting and is conductively connected via a conductive joint material, for example, on a land on the surface of a mother board (not illustrated). Or, the external conductive layer 58 is used as a rewiring layer for conversion of wiring pitch between the electronic components 24 and 26 and a mother board.
- Embodiment 2 many internal electrodes 14 of the interposer 50 are used to connect the electronic components 24 and 26 to a board (a mother board (not illustrated) or the like). Accordingly, due to an operation similar to that of Embodiment 1, stress from the electronic components 24 and 26 and the board is absorbed by the stress buffer units 54 A and 54 B of the interposer 50 , so that mounting reliability is improved.
- the present invention is not limited to the aforementioned embodiments, and many changes or modifications to the embodiments are possible without departing from the gist of the invention.
- the following can be included in the technical scope of the invention: (1) The configuration and dimensions in the aforementioned embodiments are merely exemplary of the invention and may be adequately varied as required; (2) The materials illustrated in the embodiments are also exemplary and may be adequately changed as long as similar effects are achieved.
- Embodiment 1 aluminum is used for the valve metal which is used to form the oxide base material 30 , but well-known metals of various kinds may be used as long as anodic oxidation can be made; (3)
- the oxide base material 30 is used as a mold, and after the oxide base material 30 has been entirely removed, the resin 12 is filled, as a replacement, in the void space 36 between the internal electrodes 14 .
- the stress buffer units 54 A and 54 B are provided which is obtained by replacing only the vicinity of the front and rear surfaces of the oxide base material 30 with the resin 12 , but the percentage of replacement of the oxide base material 30 by the resin 12 may be adequately varied as required.
- the oxide base material 30 may be entirely or partly replaced with the resin 12 , and that part of the oxide base material 30 which is replaced may be adequately changed; (4)
- the above-described embodiments are merely exemplary of the invention. The design thereof may be adequately changed as long as the same effects are achieved; (5)
- the present invention is applied to the interposer 50 of the circuit module 60 , but this is also exemplary of the invention.
- the present invention may be applied to a module board allowing wiring design or to an impedance element, which double as an interposer.
- the above-described embodiments of the present invention utilize remarkable flexibility of the internal electrode and deformation of the insulating material having a small Young's modulus and thus can absorb or release stress acting on the joint portions of mounted components; accordingly, the invention is applicable to a stress buffer layer. Particularly, since stress acting on a solder joint portion can be released, the invention is suitable for applications to a joint material used to improve mounting reliability. Particularly, significant advantageous effects are achieved in vehicle-mounted components requiring guaranteed operation under high temperature or component mounting boards which include multiple sorts of materials or multiple electrode pitches in a mixed manner.
Abstract
Description
- The present invention relates to a stress buffer layer, and more particularly to a stress buffer layer and a method for producing the stress buffer layer, suitable for release of stress acting on a joint portion or the like between a printed board and a chip component and also suitable for improvement in reliability in mounting a component.
- When a chip component is mounted on a printed board, a method is typically used in which the chip component and the printed board are electrically connected through soldering. Further, in order to add a function to vary wiring pitches and a function to perform rewiring, an interposer may be placed between the chip component and the printed board. In general, different constituent materials are used for the printed board, the interposer and the chip component; accordingly, the magnitude of thermal expansion of these parts during a process or under use environment conditions differs from each other. Consequently, stress acts exclusively on solder joint portions in which the printed board, the interposer and the chip component are connected to each other through soldering; thus, poor connection caused by cracks or the like may occur. Therefore, there is a need for a structure which can release the stress acting on the solder joint portion.
- Japanese Patent Laid-Open No. 2008-244311 (Patent Literature 1) discloses a technique for releasing this stress acting on the solder joint portion. A semiconductor package board described in
Patent Literature 1 is characterized by including a first circuit conductive layer electrically connected to a semiconductor device, a second circuit conductive layer having a connecting terminal used for electrical connection with an external component, an insulating layer disposed between the first circuit conductive layer and the second circuit conductive layer, and a via which is a through hole in the insulating layer, used for electrical connection of the first circuit conductive layer and the second circuit conductive layer, and also characterized in that the insulating layer has a dual-layer structure, and Young's modulus of a second insulating layer disposed on the side of the second circuit conductive layer is smaller than that of a first insulating layer disposed on the side of the first circuit conductive layer. - Japanese Patent Laid-Open No. 2008-227020 (Patent Literature 2) discloses another example. In
Patent Literature 2, an electronic component mounting structure is used in which an electronic component chip having a plurality of protrusion electrodes distributed on the whole mounting surface thereof is mounted via the protrusion electrodes on a substrate. An object of the invention is to release stress produced in the protrusion electrodes caused by temperature rise during the operation of the electronic component and thereby improve the reliability of the electronic component; and a disclosed solution is that the protrusion electrodes are arranged so that the distribution density of the protrusion electrodes becomes higher in a direction from the center to the outer side of the mounting surface of the electronic component chip. InPatent Literature 2, solder bump is given as an illustrative example of the protrusion electrode. - Japanese Patent Laid-Open No. 2008-205184 (Patent Literature 3) discloses a mounting structure in which a connecting terminal of a semiconductor device is electrically connected through a connecting member to a circuit board, and the connecting member has a conductive protrusion including a columnar portion, and the cross-sectional area of the columnar portion being the result of cutting the columnar portion by a plane parallel to the surface of the semiconductor device is smaller than the surface area of the connecting terminal of the semiconductor device. The circuit board and the semiconductor device are electrically connected through the conductive portion of the connecting member.
- Patent Literature 1: Japanese Patent Laid-Open No. 2008-244311 (FIG. 1)
- Patent Literature 2: Japanese Patent Laid-Open No. 2008-227020 (FIG. 1)
- Patent Literature 3: Japanese Patent Laid-Open No. 2008-205184 (FIG. 2)
- However, the aforementioned background art has the following problems. That is, a problem with the techniques described in
Patent Literature 1 andPatent Literature 2 is that the effect of releasing stress acting on the joint portion is indirectly achieved and thus the stress on the joint portion cannot be directly released; consequently, the stress releasing effect is small. A problem with the technique described in Patent Literature 3 is that the member used for releasing the stress is as large as electrodes and thus a displacement sufficient for releasing the stress cannot be produced; consequently, the stress acting on the joint portion is not completely absorbed. - An embodiment of the present invention provides a stress buffer layer which satisfactorily releases stress acting on the joint portion, allowing an improvement in mounting reliability.
- A stress buffer layer according to an embodiment of the present invention is one on which an electronic component can be mounted, and is characterized by including a through electrode layer having many internal electrodes obtained by filling a conductive material in many holes of a plate-like base material, the many holes penetrating through the base material in a direction of thickness, the plate-like base material being constituted by replacing at least a part of a porous oxide base material formed by anodic oxidation of valve metal with an insulating material having a Young's modulus smaller than the oxide base material.
- A stress buffer layer according to an embodiment of the present invention is characterized in that an insulating material having a Young's modulus smaller than the oxide base material is disposed close to both of the main surfaces of the plate-like base material. Another embodiment is characterized in that the insulating material having a smaller Young's modulus is resin. Another embodiment is characterized by including external conductive layers which are disposed on both of the main surfaces of the through electrode layer and which are conductively connected to each other via at least a part of the many internal electrodes. Another embodiment is characterized in that a flexible layer of resin covering that end portion of the internal electrode which is not connected to the external conductive layer is disposed on both of the main surfaces of the through electrode layer. The aforementioned and another object, feature and advantage of the present invention will be made clear by detailed explanations and accompanying drawings given below.
- An embodiment of the present invention provides a stress buffer layer which satisfactorily releases stress acting on a joint portion, allowing an improvement in mounting reliability.
-
FIG. 1 is aview illustrating Embodiment 1 of the present invention;FIG. 1(A) is a view illustrating a state in which the embodiment is applied to mounting of a component;FIG. 1(B) is a main cross-sectional view of a stress buffer sheet according to the embodiment;FIG. 1(C) is a cross-sectional view showing an operation of the stress buffer sheet. -
FIG. 2 is a cross-sectional view illustrating an example of production process of the stress buffer sheet according toEmbodiment 1. -
FIG. 3 is an SEM image showing a nanopillar array of metal formed in the process ofFIG. 2(E) . -
FIG. 4 is a view illustrating an interposer according toEmbodiment 2 of the present invention;FIG. 4(A) is a main cross-sectional view;FIG. 4(B) is a cross-sectional view showing a state where stress is applied. -
FIG. 5 is a view illustrating an example of production process of the interposer according toEmbodiment 2. -
FIG. 6 is a cross-sectional view illustrating an example of circuit module using the interposer according toEmbodiment 2. - Embodiments for carrying out the present invention will be described in detail below with reference to examples.
- First,
Embodiment 1 of the present invention will be described with reference toFIGS. 1 to 3 . In the present embodiment, the invention is applied to a stress buffer sheet used as a joint member between a wiring board and an electronic component.FIG. 1(A) is a view illustrating a state in which the embodiment is applied to mounting of a component;FIG. 1(B) is a main cross-sectional view of a stress buffer sheet according to the embodiment; andFIG. 1(C) is a cross-sectional view showing an operation of the stress buffer sheet.FIG. 2 is a cross-sectional view illustrating an example of production process of the stress buffer sheet according to the present embodiment.FIG. 3 is an SEM image showing a nanopillar array of metal formed in the process ofFIG. 2(E) . Thestress buffer sheet 10 according to the present embodiment is used, for example as illustrated inFIG. 1(A) , as a joint member betweenterminal units wiring board 20 andterminal units electronic component 24. Thestress buffer sheet 10 absorbs or releases stress caused by the difference of thermal expansion coefficient between the above members when heat is produced in a process for mounting theelectronic component 24 on thewiring board 20 or under use environment conditions. - The
stress buffer sheet 10 according to the present embodiment includes, as illustrated inFIG. 1(B) , a throughelectrode layer 13 havingresin 12 filled between many columnar internal electrodes (metal pillars) 14 and externalconductive layers electrode layer 13. The manyinternal electrodes 14 are formed, as described later, using a porous oxide base material 30 (refer toFIG. 2 ) produced by anodic oxidation of valve metal; theoxide base material 30 is removed after theinternal electrodes 14 have been formed, and theresin 12 having a Young's modulus smaller than theoxide base material 30 is filled as a replacement. Theinternal electrode 14 has a high aspect ratio and a remarkable flexibility. In this specification, the term “aspect ratio” of theinternal electrode 14 means the ratio of diameter to length (thickness) of theinternal electrode 14. Theresin 12 is also small in Young's modulus and can be deformed together with theinternal electrode 14. Accordingly, in a structure having thewiring board 20 and theelectronic component 24 connected through thestress buffer sheet 10, when stress acts on the joint portion, theinternal electrode 14 and theresin 12, i.e., the whole of the throughelectrode layer 13 is, as illustrated inFIG. 1(C) , deformed as indicated by the arrow inFIG. 1(C) and absorbs the stress. - An example of production method according to the present embodiment will be described with reference to
FIG. 2 . First, anoxide base material 30 is, as illustrated inFIG. 2(A) , prepared which hasmany holes 32 of a high aspect ratio produced by anodic oxidation of valve metal. In the present embodiment, Al (aluminum) is used as valve metal to produce the oxide base material 30 (porous Al2O3). In this case, a well-known method for forming theholes 32 by use of anodic oxidation is used. Subsequently, aseed layer 34 is, as illustrated inFIG. 2(B) , formed on themain surface 30B of theoxide base material 30. Using theseed layer 34 as a seed, plated electrical conductor is, as illustrated inFIG. 2(C) , filled as an electrode material in the inner side of theholes 32 to form manyinternal electrodes 14. Theinternal electrode 14 does not need to be formed in all of themany holes 32 of theoxide base material 30; it is sufficient to achieve an electrical resistance satisfactorily low according to applications between the top and bottom surfaces of thestress buffer sheet 10 after forming of thestress buffer sheet 10. Both ends of theinternal electrode 14 are, as evident fromFIG. 2(C) , formed so as to be substantially on the same plane as the top and bottom surfaces of theoxide base material 30. Subsequently, theseed layer 34 is removed at the position indicated by the broken line inFIG. 2(C) ; and externalconductive layers FIG. 2(D) , arranged on the twomain surfaces oxide base material 30, respectively. The externalconductive layers main surfaces oxide base material 30 so as to be electrically connected to theinternal electrode 14. Theinternal electrode 14 is constituted so as to have a surface substantially on the same plane as the twomain surfaces oxide base material 30; thus, when the externalconductive layers main surfaces oxide base material 30, electrical connection with theinternal electrode 14 is achieved. Then, when theoxide base material 30 is, as illustrated inFIG. 2(E) , selectively removed, a metal nanopillar array is formed which includes theinternal electrodes 14 having a diameter of several dozen to several hundred nm and a length (thickness) of several hundred nm to several dozen μm.FIG. 2(E) illustrates an example in which theoxide base material 30 is wholly removed, but only a part of theoxide base material 30 may be removed.FIG. 3 shows an SEM image of metal nanopillar array formed by using Ni as the plated electrical conductor and using NaOH as chemical solution used for selective removal in the process ofFIG. 2(E) . - Finally, the
resin 12 is impregnated in a void space 36 (i.e., the part being the result of removing the oxide base material 30) illustrated inFIG. 2(E) , whereby thestress buffer sheet 10 is produced. In the present embodiment, theoxide base material 30 removed in the process illustrated inFIG. 2(E) is alumina which has a Young's modulus of about 400 GPa. Meanwhile, the Young's modulus of theresin 12 filled in thevoid space 36 in the process ofFIG. 2(F) is 0.01 to 1 GPa for epoxy, 1 to 5 GPa for Silicone resin, 1 to 5 GPa for polyimide, 1 to 5 GPa for BCB, for example. In this way, theresin 12 has a Young's modulus smaller than theoxide base material 30 and thus does not impede deformation of theinternal electrode 14 having flexibility and can be elastically deformed integrally with theinternal electrode 14. - The
stress buffer sheet 10 is mounted, for example, on an external connection terminal unit (theterminal units electronic component 24 ofFIG. 1 ) of a semiconductor chip, and the resultant product is provided for a user. In a case where the user mounts the semiconductor chip with thestress buffer sheet 10 on thewiring board 20, a difference of displacement may occur between the board and the chip caused by thermal expansion and the like. However, thestress buffer sheet 10 deforms, as illustrated inFIG. 1(B) , and absorbs the difference, so that an excellent terminal connection is ensured. - Examples of the
resin 12 include epoxy, Silicone resin, polyimide and BCB (benzocyclobutene resin). In the present embodiment, in order to achieve greater ease of mounting, the externalconductive layers internal electrode 14, a low-resistance metal on which plating can be made and which has a high ductility is preferably used; for example, Au, Cu and Ag. As described above, when a chip (electronic component) with thestress buffer sheet 10 according to the present embodiment mounted thereon can be provided, the user side does not need to modify the mounting process, which is preferable. Alternatively, theinternal electrode 14 may be directly formed on a pad (terminal unit) of the chip. Further, in order to ensure chemical and mechanical strength of thestress buffer sheet 10, another electrical conductor may be arranged between theinternal electrode 14 and the externalconductive layers - In the
stress buffer sheet 10 mounted, as described above, on thewiring board 20, the effective cross-sectional area for current path is half to one third the area of the sheet, for example; but, since the joint is performed using a plurality of theinternal electrodes 14 made of metal, a satisfactorily low resistance value is ensured. The overall thickness of thestress buffer sheet 10 is several hundred nm to several dozen μ, for example; and the aspect ratio (AR ratio) of theinternal electrode 14 is several dozen to several thousand. - In this way, according to
Embodiment 1, the porousoxide base material 30 being the result of anodic oxidation of valve metal is used as a mold, and manyinternal electrodes 14 penetrating through theoxide base material 30 in a direction of thickness are formed and thereafter, theoxide base material 30 is selectively removed to form a metal nanopillar array and then theresin 12 having a Young's modulus smaller than theoxide base material 30 is filled in thevoid space 36 of the metal nanopillar array, whereby the throughelectrode layer 13 is provided. Then, thewiring board 20 and theelectronic component 24 are joined via the externalconductive layers electrode layer 13. Accordingly, when heat is produced in the process or under use environment conditions, stress caused by a difference of thermal expansion coefficient between the above members is absorbed by thestress buffer sheet 10 in which deformation of theinternal electrode 14 having flexibility is utilized, so that the reliability of joint between thewiring board 20 and theelectronic component 24 is improved. Further, since theinternal electrode 14 is formed in a shape of array, the number of connection points increases, so that an excellent mechanical strength of the joint portion and a satisfactorily low connection resistance are ensured. -
Embodiment 2 of the present invention will be described with reference toFIGS. 4 to 6 . In the present embodiment, the invention is applied to an interposer.FIG. 4 is a view illustrating an interposer according to the present embodiment;FIG. 4(A) is a main cross-sectional view;FIG. 4(B) is a cross-sectional view showing a state where stress is applied.FIG. 5 is a view illustrating an example of production process of the interposer according to the present embodiment.FIG. 6 is a cross-sectional view illustrating an example of circuit module using the interposer according to the present embodiment. The same reference characters are applied to constituent parts identical or corresponding to those ofEmbodiment 1 described above. Aninterposer 50 according to the present embodiment includes, as illustrated inFIG. 4(A) , a throughelectrode layer 52 having many columnarinternal electrodes 14 penetrating therethrough in a direction of thickness, and externalconductive layers internal electrodes 14 on the front and rearmain surfaces electrode layer 52. The throughelectrode layer 52 according to the present embodiment includes a porousoxide base material 30 being the result of anodic oxidation of valve metal, andstress buffer units resin 12, disposed close to the front and rear surfaces (top and bottom surfaces) of theoxide base material 30. In thestress buffer units resin 12, having a Young's modulus smaller than theoxide base material 30, does not impede flexibility of theinternal electrode 14; thus, upon receiving stress, thestress buffer units FIG. 4(B) and the stress is absorbed or released. - An example of production process according to the present embodiment will be described with reference to
FIG. 5 . First, similarly to the process illustrated inFIGS. 2(A) to 2(C) ofEmbodiment 1 described above, manyinternal electrodes 14 penetrating through theoxide base material 30 in a direction of thickness are formed using many holes of theoxide base material 30 being the result of anodic oxidation of valve metal. Materials similar to those ofEmbodiment 1 are used as the materials for theoxide base material 30 and theinternal electrodes 14. Subsequently, the front and rearmain surfaces oxide base material 30 are, as illustrated inFIG. 5(B) , ground by a predetermined thickness so thatend portions internal electrode 14 formed in theoxide base material 30 in an embedded manner are exposed so as to have a predetermined length. Subsequently, theresin 12 is, as illustrated inFIG. 5(C) , impregnated so as to cover the part exposed in the preceding process. Then, theresin 12 is cut at a position indicated by the broken line inFIG. 5(C) to expose theend portions FIG. 5(D) ). As a result, as evident fromFIG. 5(D) , theinternal electrode 14 is constituted so that theend portions internal electrode 14 are substantially on the same plane as the surface of theresin 12 provided on the surface of the base material. Finally, externalconductive layers FIG. 5(E) , formed on a part of themain surfaces internal electrodes 14 is electrically connected on the front and rear of the throughelectrode layer 52, whereby theinterposer 50 according to the present embodiment is provided. A material similar to that ofEmbodiment 1 is used for theresin 12; and Cu, Ni, solder, or multilayer electrode of these materials is used for the externalconductive layers - The overall thickness of the
interposer 50 produced as described above is several dozen μm to several hundred μm, for example; and the thickness of thestress buffer units FIG. 5 , a process may be added by which, in order to protect theinternal electrode 14 not connected to the externalconductive layers main surfaces electrode layer 52 is coated with flexible resin not illustrated in the drawings before the externalconductive layers main surfaces conductive layers - An exemplary application of the present embodiment will be described with reference to
FIG. 6 . Acircuit module 60 illustrated inFIG. 6 includes theinterposer 50 according to the present embodiment andelectronic components interposer 50. In the illustrated example, theinterposer 50 includes an insulatinglayer 62 made of flexible resin on the front and rearmain surfaces electrode layer 52; the insulatinglayer 62 is for protecting theinternal electrode 14 not connected to the externalconductive layers conductive layers 56 on the front side of theinterposer 50 are connected viajoint units terminal units electronic component 24 and terminal units (not illustrated) of theelectronic component 26. Solder is used for thejoint units conductive layers 58 on the rear side of theinterposer 50 are used as wiring or electrode pad for connection with theinternal electrodes 14 connected to theelectronic components conductive layer 58 has a function of land for mounting and is conductively connected via a conductive joint material, for example, on a land on the surface of a mother board (not illustrated). Or, the externalconductive layer 58 is used as a rewiring layer for conversion of wiring pitch between theelectronic components - In this way, in
Embodiment 2, manyinternal electrodes 14 of theinterposer 50 are used to connect theelectronic components Embodiment 1, stress from theelectronic components stress buffer units interposer 50, so that mounting reliability is improved. - The present invention is not limited to the aforementioned embodiments, and many changes or modifications to the embodiments are possible without departing from the gist of the invention. For example, the following can be included in the technical scope of the invention: (1) The configuration and dimensions in the aforementioned embodiments are merely exemplary of the invention and may be adequately varied as required; (2) The materials illustrated in the embodiments are also exemplary and may be adequately changed as long as similar effects are achieved. For example, in
Embodiment 1, aluminum is used for the valve metal which is used to form theoxide base material 30, but well-known metals of various kinds may be used as long as anodic oxidation can be made; (3) InEmbodiment 1, theoxide base material 30 is used as a mold, and after theoxide base material 30 has been entirely removed, theresin 12 is filled, as a replacement, in thevoid space 36 between theinternal electrodes 14. InEmbodiment 2, thestress buffer units oxide base material 30 with theresin 12, but the percentage of replacement of theoxide base material 30 by theresin 12 may be adequately varied as required. That is, theoxide base material 30 may be entirely or partly replaced with theresin 12, and that part of theoxide base material 30 which is replaced may be adequately changed; (4) As for the configuration of connection with theelectronic components wiring board 20, also, the above-described embodiments are merely exemplary of the invention. The design thereof may be adequately changed as long as the same effects are achieved; (5) InEmbodiment 2, the present invention is applied to theinterposer 50 of thecircuit module 60, but this is also exemplary of the invention. For example, the present invention may be applied to a module board allowing wiring design or to an impedance element, which double as an interposer. - The above-described embodiments of the present invention utilize remarkable flexibility of the internal electrode and deformation of the insulating material having a small Young's modulus and thus can absorb or release stress acting on the joint portions of mounted components; accordingly, the invention is applicable to a stress buffer layer. Particularly, since stress acting on a solder joint portion can be released, the invention is suitable for applications to a joint material used to improve mounting reliability. Particularly, significant advantageous effects are achieved in vehicle-mounted components requiring guaranteed operation under high temperature or component mounting boards which include multiple sorts of materials or multiple electrode pitches in a mixed manner.
-
- 10 stress buffer sheet
- 12 resin
- 13 through electrode layer
- 14 internal electrode (metal pillar)
- 14A, 14B end portion
- 16A, 16B external conductive layer
- 20 wiring board
- 22A, 22B terminal unit
- 24, 26 electronic component
- 24A, 24B terminal unit
- 25A, 25B, 26A, 26B joint portion
- 30 oxide base material
- 30A, 30B main surface
- 32 hole
- 34 seed layer
- 36 void space
- 50 interposer
- 52 through electrode layer
- 52A, 52B main surface
- 54A, 54B stress buffer unit
- 56, 58 external conductive layer
- 60 circuit module
- 62 insulating layer
Claims (9)
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US20130092424A1 true US20130092424A1 (en) | 2013-04-18 |
US9161438B2 US9161438B2 (en) | 2015-10-13 |
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US10593658B2 (en) * | 2015-09-04 | 2020-03-17 | PlayNitride Inc. | Light emitting device and method of forming the same |
US20210104854A1 (en) * | 2017-05-18 | 2021-04-08 | Shin-Etsu Polymer Co., Ltd. | Electrical connector and method for producing same |
CN114496350A (en) * | 2020-10-23 | 2022-05-13 | 荣耀终端有限公司 | Electrode, electronic device and device |
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CN110783728A (en) * | 2018-11-09 | 2020-02-11 | 广州方邦电子股份有限公司 | Flexible connector and manufacturing method |
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US9161438B2 (en) | 2015-10-13 |
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JP5362104B2 (en) | 2013-12-11 |
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