US20120256302A1 - Method for producing a thin film transistor and a device of the same - Google Patents
Method for producing a thin film transistor and a device of the same Download PDFInfo
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- US20120256302A1 US20120256302A1 US13/494,510 US201213494510A US2012256302A1 US 20120256302 A1 US20120256302 A1 US 20120256302A1 US 201213494510 A US201213494510 A US 201213494510A US 2012256302 A1 US2012256302 A1 US 2012256302A1
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- Prior art keywords
- thin film
- film transistor
- positive photosensitive
- photosensitive coating
- ladder
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- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
Definitions
- the present invention relates to a method for producing a thin film transistor, and particularly relates to a method, rather than a semiconductor process, for producing a thin film transistor.
- a conventional method for producing a conventional thin film transistor uses semiconductor technology, which includes film deposition, photolithography technology, etching processes and the like.
- the film deposition process includes deposing a film of dielectric or insulating material by chemical vapor deposition (CVD) and deposing a film of electric material by physical vapor deposition (PVD).
- CVD chemical vapor deposition
- PVD physical vapor deposition
- the photolithography and the etching processes define a pattern thereof.
- the equipment used for film deposition, photolithography and etching processes are all high-priced. As such, semiconductor technology, which consumes a lot of time and labor and requires expensive paraphernalia, is often criticized.
- the first prior art a conventional photosensitive pressing method, illustrates a transparent plate 1 a having a protrusion projected therefrom.
- the protrusion is transparent.
- a photosensitive material 3 a is then poured between the transparent plate 1 a and a glass substrate 2 a .
- the transparent plate 1 a and a glass substrate 2 a are separated yet are close to each other.
- an ultraviolet light is provided to cure the photosensitive material 3 a , which has been shaped between the transparent plate 1 a and the glass substrate 2 a .
- a resident part of the photosensitive material 3 a will be removed, to form a pattern of a thin film transistor.
- the transparent protrusion still plays another role as a photoresist that controls the depth of the pattern of the thin film transistor.
- FIG. 2 a perspective view of a second prior art, U.S. Pat. No. 6,518,189, discloses a first conventional nanoimprint method.
- An opaque plate 1 b has a protrusion projected therefrom, and presses onto a layer of thermoplastic polymer materials 3 b that is coated on a substrate 2 b in advance.
- Thermoplastic polymer materials 3 b only melt at high temperatures (more than 300 degrees centigrade) and shaping requires large amounts of pressure. As such any press equipment that is used in the process should be resistant against the testing environment of these kinds of conditions.
- the layer of thermoplastic polymer materials 3 b is cured after a cooling process and is further shaped by an etching process to produce a pattern.
- U.S. Pat. No. 5,900,160 discloses a first conventional microcontact method.
- a turbine mold lc presses onto a substrate 2 c that has a layer of micro-materials 3 c in a rotating manner.
- This method however, lacks a precise and stable alignment.
- the mold lc is made of Polydimethylsiloxane (PDMS) that wears out easily, deforms and has a negative effect on the precision of the pattern thereof.
- PDMS Polydimethylsiloxane
- FIGS. 4A to 4D illustrate sequential perspective views as disclosed in U.S. Pat. No. 6,060,121, as a second conventional microcontact method.
- the thickness of the pattern is much thinner that that of other conventional methods necessitating an additional process with another material in order to increase the thickness of the pattern.
- FIGS. 5A to 5D illustrate sequential perspective views as disclosed in U.S. Pat. No. 6,380,101, as a third conventional microcontact method.
- the impression coating 3 e is further provided as a photoresist for post etching process.
- FIGS. 6A to 6D illustrate sequential perspective views as disclosed in U.S. Pat. No. 6,413,587, as a fourth conventional microcontact method.
- a plate if having a protrusion projected therefrom and an impression coating 3 f formed thereon, presses a substrate 2 f coated with a thin film 4 f .
- an additional process is necessary with another material in order to increase the thickness of the pattern because of the thin impression coating 3 f.
- the first step is to produce an impression mold made of polymer materials as the plate or mold for providing sufficient deformation in the pressing step.
- the impression mold should separate easily from the substrate after the pressing step.
- the impression mold however, often suffers from defective patterns due to the resilient property caused by the pressure that it experiences in the pressing step. So the pattern is often imprecise.
- the impression mold reacts easily with non-polar organic solvents, such as toluene or hexane. When this occurs, the impression mold expands by a volume thereof due to its chemical property. As such, the peripheral environment should be controlled and monitored.
- the primary objective of the invention is therefore to specify a thin film transistor that can replace the conventional semiconductor process with simple steps, thereby improving manufacturing efficiency and saving on production costs.
- the secondary objective of the invention is therefore to specify a thin film transistor that can adjust the depth of a desired pattern directly, without additional etching or other processes.
- a method for producing a thin film transistor include the following steps—preparing a glass substrate; having a positive photosensitive coating on the glass substrate; providing a transparent mold plate, which has a plurality of ladder opaque protrusions arranged in accordance with a predetermined pattern having different depth; controlling the transparent mold plate closely to press into the positive photosensitive coating and non-contacting to the glass substrate; Exposing a part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions, via an explosion by a UV light; and separating the transparent mold plate from the glass substrate, and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating made from changeable material is pressed, cured, and cleaned.
- a thin film transistor that includes a glass substrate having a positive photosensitive coating formed thereon, and a part of the positive photosensitive coating being exposed via a UV light; a transparent mold plate including a plurality of ladder opaque protrusions disposed thereon, and the ladder opaque protrusions being arranged relevant to the predetermined pattern having different depth; and an adhesion layer formed between the transparent mold plate and the ladder opaque protrusions; and the adhesion layer having a coefficient of thermal expansion ranging between those of the transparent mold plate and the ladder opaque protrusions; wherein the other part of the positive photosensitive coating shielded under the ladder opaque protrusions is remained while the part of the positive photosensitive coating unshielded by the ladder opaque protrusions is removed via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating is pressed, cured, and cleaned.
- a thin film transistor that include a glass substrate having a positive photosensitive coating formed thereon, and a part of the positive photosensitive coating being exposed via a UV light; a transparent mold plate including a plurality of ladder opaque protrusions disposed thereon, and the ladder opaque protrusions being arranged relevant to the predetermined pattern having different depth; and an adhesion layer formed between the transparent mold plate and the ladder opaque protrusions; and the adhesion layer having a coefficient of thermal expansion ranging between those of the transparent mold plate and the ladder opaque protrusions; wherein the other part of the positive photosensitive coating shielded under the ladder opaque protrusions is remained while the part of the positive photosensitive coating unshielded by the ladder opaque protrusions is removed via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating is pressed, cured, and cleaned.
- FIGS. 1A to 1D are sequential perspective views according to a conventional photosensitive pressing method as the first example of prior art
- FIG. 2 is a perspective view according to a first conventional nanoimprint method patented by U.S. Pat. No. 6,518,189 as the second example of prior art;
- FIG. 3 is a perspective view according to a first microcontact method patented by U.S. Pat. No. 5,900,160 as the third example of prior art;
- FIGS. 4A to 4D are sequential perspective views according to a second microcontact method patented by U.S. Pat. No. 6,060,121 as the fourth example of prior art;
- FIGS. 5A to 5D are sequential perspective views according to a third microcontact method patented by U.S. Pat. No. 6,380,101 as the fifth example of prior art;
- FIGS. 6A to 6D are sequential perspective views according to a fourth microcontact method patented by U.S. Pat. No. 6,413,587 as the sixth example of prior art;
- FIGS. 7A to 7C are sequential perspective views of thin film transistor of a preferred embodiment according to the present invention.
- FIG. 8 is a side view of a mold plate according to the present invention.
- the present invention produces a plurality of ladder opaque protrusions on a transparent mold plate, and then presses the transparent mold plate onto a substrate that has a positive photosensitive coating formed in advance. a part of the positive photosensitive coating is exposed via a UV light, thus removing the unshielded part via a chemical solvent, and the other part of the positive photosensitive coating shielded under the ladder opaque protrusion is defined the different depth on the predetermined pattern, thereby, defining both a predetermined pattern and different depth of the predetermined pattern simultaneously without additional etching or other processes.
- the method according to the present invention can be brought into practice to each layer of a thin film transistor by taking different photosensitive materials with specific properties; for example, a semiconductor photosensitive material can be used as a semiconductor layer and the like, such as active layer or an ohmic contact layer; a conductive material can be used as a conductive line or a electrode layer, such as a gate electrode, a source electrode, a drain electrode, a contact pad, a capacitance electrode, a circuit line and so on; an insulating material is used for isolation, such as an insulator layer, a dielectric layer or a passivation layer.
- These layers mentioned above need more steps if produced by a conventional semiconductor process. These additional steps ensure that the method according to the present invention is effective and that the expensive equipment that the conventional semiconductor process needs are not required.
- a method for producing a thin film transistor of sequential perspective views includes the following steps. Firstly, preparing a glass substrate 2 prior to providing a positive photosensitive coating 3 on the glass substrate 2 in a spin-coating manner as shown in FIG. 7A . Secondly, providing a transparent mold plate 1 , which then has a plurality of ladder opaque protrusions 11 in accordance with a predetermined pattern having the different depth. Thirdly, in FIG. 7B , the transparent mold plate 1 is controlled to press closely to the positive photosensitive coating 3 of the glass substrate 2 with uniform pressure, and non-contacting to the glass substrate 2 .
- the positive photosensitive coating 3 is a kind of fluid, so that the positive photosensitive coating 3 is forced with a at least two predetermined depth by the ladder opaque protrusions 11 and flows to fill a space between the transparent mold plate 1 and the glass substrate 2 .
- a part of the positive photosensitive coating 3 which is not shielded under the opaque protrusions 1 , is exposed via a UV light 4 .
- FIG. 7C shows that the other part of the positive photosensitive coating 3 , which is shielded under the ladder opaque protrusions 1 and not exposed. thereby, a part of the unshielded positive photosensitive coating 3 is removed via a chemical solvent, after the transparent mold plate 1 is separated from the glass substrate 2 .
- the positive photosensitive coating 3 is finally formed with the predetermined pattern having at least two different depths.
- the positive photosensitive coating 3 can be made of semiconductor, conductive or insulating materials.
- the thin film transistor is formed after the positive photosensitive coating 3 is pressed, cured, and cleaned in a sequential manner.
- the transparent mold plate 1 is made of glass material or quartz; the ladder opaque protrusions 11 are made of metallic material, such as Cr, Mo or W. At this stage the height of the ladder opaque protrusions 11 are a little less than their required height at the end of the process.
- the transparent mold plate 1 is cleaned by part of the conventional semiconductor process. Furthermore, the transparent mold plate 1 can be deposed with an adhesion layer 5 (a kind of a metallic oxide) prior to being disposed with the protrusions 11 (a kind of a metallic thin film) wherein the adhesion layer 5 has a coefficient of thermal expansion ranging between those of the transparent mold plate 1 and the opaque protrusions 11 .
- the adhesion layer 5 is made of a metallic oxide that is made from a predetermined metal.
- the predetermined metal is one of the transition metals, which includes Cr, Mo or W; and the metallic oxide is a transition-metal oxide corresponding to the predetermined metal.
- the transparent mold plate 1 is deposed with a chromium oxide, which has a thickness of less than 500 .ANG.
- the transparent mold plate 1 with the chromium oxide is then further deposited with a layer of chromium (Cr).
- the layer of chromium has a real thickness a little less than the anticipated predetermined depth of the predetermined pattern, and a difference, between the real thickness and the anticipated depth, exists due to the forcing pressure of the transparent mold plate 1 and properties of viscosity of the opaque protrusions 11 and the negative photosensitive coating 3 .
- the difference should be within or no more than 10%.
- the layer of the protrusions 11 , the metallic thin film, and the layer of adhesion layer 5 , metallic oxide, are further processed by photo and etching processes (like dry-etching, wet etching, using an E-beam process or laser writing) simultaneously, so as to form as a plurality of the protrusions 11 corresponding to the predetermined pattern.
- a transparent material like Teflon
- Teflon is de-wetted from the negative photosensitive coating 3 , Teflon is called a dewetting layer 6 .
- An image sensor is provided in order to align with both of the transparent mold plate 1 and the glass substrate 2 .
- the image sensor is a charge coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) selectively.
- the method can be practiced in each layer of the thin film transistor.
- the protrusions are made of metal materials with rare deformation, so they are more precise and accurate.
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Abstract
Description
- This application is a divisional patent application of U.S. application Ser. No. 12/353,345, filed Jan. 14, 2009, that was a Continuation-in-part of U.S. application Ser. No. 10/995,479, filed Nov. 24, 2004 which claims priority under 35 U.S.C. §119 (a) of Patent Application number 93126251 filed in Taiwan ROC on Aug. 31, 2004.
- 1. Field of the Invention
- The present invention relates to a method for producing a thin film transistor, and particularly relates to a method, rather than a semiconductor process, for producing a thin film transistor.
- 2. Background of the Invention
- A conventional method for producing a conventional thin film transistor uses semiconductor technology, which includes film deposition, photolithography technology, etching processes and the like. The film deposition process includes deposing a film of dielectric or insulating material by chemical vapor deposition (CVD) and deposing a film of electric material by physical vapor deposition (PVD). The photolithography and the etching processes define a pattern thereof. The equipment used for film deposition, photolithography and etching processes are all high-priced. As such, semiconductor technology, which consumes a lot of time and labor and requires expensive paraphernalia, is often criticized.
- Referring to
FIGS. 1A to 1D , the first prior art, a conventional photosensitive pressing method, illustrates a transparent plate 1 a having a protrusion projected therefrom. The protrusion is transparent. Aphotosensitive material 3 a is then poured between the transparent plate 1 a and aglass substrate 2 a. The transparent plate 1 a and aglass substrate 2 a are separated yet are close to each other. Next an ultraviolet light is provided to cure thephotosensitive material 3 a, which has been shaped between the transparent plate 1 a and theglass substrate 2 a. After a dry or wet etching process, a resident part of thephotosensitive material 3 a will be removed, to form a pattern of a thin film transistor. However, by this stage all parts of thephotosensitive material 3 a have been cured because of the transparent protrusion, so the etching process is necessary. Furthermore, the transparent protrusion still plays another role as a photoresist that controls the depth of the pattern of the thin film transistor. -
FIG. 2 , a perspective view of a second prior art, U.S. Pat. No. 6,518,189, discloses a first conventional nanoimprint method. Anopaque plate 1 b has a protrusion projected therefrom, and presses onto a layer ofthermoplastic polymer materials 3 b that is coated on a substrate 2 b in advance.Thermoplastic polymer materials 3 b, only melt at high temperatures (more than 300 degrees centigrade) and shaping requires large amounts of pressure. As such any press equipment that is used in the process should be resistant against the testing environment of these kinds of conditions. In addition, the layer ofthermoplastic polymer materials 3 b is cured after a cooling process and is further shaped by an etching process to produce a pattern. - With respect to
FIG. 3 , a perspective view of the third prior art, U.S. Pat. No. 5,900,160, discloses a first conventional microcontact method. A turbine mold lc presses onto a substrate 2 c that has a layer of micro-materials 3 c in a rotating manner. This method however, lacks a precise and stable alignment. Furthermore, the mold lc is made of Polydimethylsiloxane (PDMS) that wears out easily, deforms and has a negative effect on the precision of the pattern thereof. - The fourth prior art is displayed in
FIGS. 4A to 4D which illustrate sequential perspective views as disclosed in U.S. Pat. No. 6,060,121, as a second conventional microcontact method. A plate 1 d having a protrusion projected therefrom and animpression coating 3 d formed thereon, presses asubstrate 2 d coated with athin film 4 d. Although a pattern is formed, the thickness of the pattern is much thinner that that of other conventional methods necessitating an additional process with another material in order to increase the thickness of the pattern. - The fifth prior art is displayed in
FIGS. 5A to 5D which illustrate sequential perspective views as disclosed in U.S. Pat. No. 6,380,101, as a third conventional microcontact method. A plate 1 e having a protrusion projected therefrom and animpression coating 3 e formed thereon, presses asubstrate 2 e coated with athin film 4 e. Similarly to the first prior art, theimpression coating 3 e is further provided as a photoresist for post etching process. - The sixth prior art is displayed in
FIGS. 6A to 6D which illustrate sequential perspective views as disclosed in U.S. Pat. No. 6,413,587, as a fourth conventional microcontact method. A plate if having a protrusion projected therefrom and animpression coating 3 f formed thereon, presses asubstrate 2 f coated with athin film 4 f. Similarly to the fourth prior art, an additional process is necessary with another material in order to increase the thickness of the pattern because of the thin impression coating 3 f. - In regards to the conventional microcontact methods according to the third to the sixth prior arts, the first step is to produce an impression mold made of polymer materials as the plate or mold for providing sufficient deformation in the pressing step. The impression mold should separate easily from the substrate after the pressing step. The impression mold however, often suffers from defective patterns due to the resilient property caused by the pressure that it experiences in the pressing step. So the pattern is often imprecise. Additionally, the impression mold reacts easily with non-polar organic solvents, such as toluene or hexane. When this occurs, the impression mold expands by a volume thereof due to its chemical property. As such, the peripheral environment should be controlled and monitored.
- Hence, an improvement over the prior art is required to overcome the disadvantages thereof.
- The primary objective of the invention is therefore to specify a thin film transistor that can replace the conventional semiconductor process with simple steps, thereby improving manufacturing efficiency and saving on production costs.
- The secondary objective of the invention is therefore to specify a thin film transistor that can adjust the depth of a desired pattern directly, without additional etching or other processes.
- According to the invention, these objectives are achieved by a method for producing a thin film transistor and include the following steps—preparing a glass substrate; having a positive photosensitive coating on the glass substrate; providing a transparent mold plate, which has a plurality of ladder opaque protrusions arranged in accordance with a predetermined pattern having different depth; controlling the transparent mold plate closely to press into the positive photosensitive coating and non-contacting to the glass substrate; Exposing a part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions, via an explosion by a UV light; and separating the transparent mold plate from the glass substrate, and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating made from changeable material is pressed, cured, and cleaned.
- According to the invention, these objectives are achieved by a thin film transistor that includes a glass substrate having a positive photosensitive coating formed thereon, and a part of the positive photosensitive coating being exposed via a UV light; a transparent mold plate including a plurality of ladder opaque protrusions disposed thereon, and the ladder opaque protrusions being arranged relevant to the predetermined pattern having different depth; and an adhesion layer formed between the transparent mold plate and the ladder opaque protrusions; and the adhesion layer having a coefficient of thermal expansion ranging between those of the transparent mold plate and the ladder opaque protrusions; wherein the other part of the positive photosensitive coating shielded under the ladder opaque protrusions is remained while the part of the positive photosensitive coating unshielded by the ladder opaque protrusions is removed via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating is pressed, cured, and cleaned.
- According to the invention, these objectives are achieved by a thin film transistor that include a glass substrate having a positive photosensitive coating formed thereon, and a part of the positive photosensitive coating being exposed via a UV light; a transparent mold plate including a plurality of ladder opaque protrusions disposed thereon, and the ladder opaque protrusions being arranged relevant to the predetermined pattern having different depth; and an adhesion layer formed between the transparent mold plate and the ladder opaque protrusions; and the adhesion layer having a coefficient of thermal expansion ranging between those of the transparent mold plate and the ladder opaque protrusions; wherein the other part of the positive photosensitive coating shielded under the ladder opaque protrusions is remained while the part of the positive photosensitive coating unshielded by the ladder opaque protrusions is removed via a chemical solvent; whereby the thin film transistor is formed a pattern having different depth, after the positive photosensitive coating is pressed, cured, and cleaned.
- To provide a further understanding of the invention, the following detailed description illustrates embodiments and examples of the invention. Examples of the more important features of the invention thus have been summarized rather broadly in order that the detailed description thereof that follows may be better understood, and in order that the contributions to the art may be appreciated. There are, of course, additional features of the invention that will be described hereinafter and which will form the subject of the claims appended hereto.
- These and other features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, where:
-
FIGS. 1A to 1D are sequential perspective views according to a conventional photosensitive pressing method as the first example of prior art; -
FIG. 2 is a perspective view according to a first conventional nanoimprint method patented by U.S. Pat. No. 6,518,189 as the second example of prior art; -
FIG. 3 is a perspective view according to a first microcontact method patented by U.S. Pat. No. 5,900,160 as the third example of prior art; -
FIGS. 4A to 4D are sequential perspective views according to a second microcontact method patented by U.S. Pat. No. 6,060,121 as the fourth example of prior art; -
FIGS. 5A to 5D are sequential perspective views according to a third microcontact method patented by U.S. Pat. No. 6,380,101 as the fifth example of prior art; -
FIGS. 6A to 6D are sequential perspective views according to a fourth microcontact method patented by U.S. Pat. No. 6,413,587 as the sixth example of prior art; -
FIGS. 7A to 7C are sequential perspective views of thin film transistor of a preferred embodiment according to the present invention; and -
FIG. 8 is a side view of a mold plate according to the present invention. - The present invention produces a plurality of ladder opaque protrusions on a transparent mold plate, and then presses the transparent mold plate onto a substrate that has a positive photosensitive coating formed in advance. a part of the positive photosensitive coating is exposed via a UV light, thus removing the unshielded part via a chemical solvent, and the other part of the positive photosensitive coating shielded under the ladder opaque protrusion is defined the different depth on the predetermined pattern, thereby, defining both a predetermined pattern and different depth of the predetermined pattern simultaneously without additional etching or other processes.
- The method according to the present invention can be brought into practice to each layer of a thin film transistor by taking different photosensitive materials with specific properties; for example, a semiconductor photosensitive material can be used as a semiconductor layer and the like, such as active layer or an ohmic contact layer; a conductive material can be used as a conductive line or a electrode layer, such as a gate electrode, a source electrode, a drain electrode, a contact pad, a capacitance electrode, a circuit line and so on; an insulating material is used for isolation, such as an insulator layer, a dielectric layer or a passivation layer. These layers mentioned above need more steps if produced by a conventional semiconductor process. These additional steps ensure that the method according to the present invention is effective and that the expensive equipment that the conventional semiconductor process needs are not required.
- With respect to
FIGS. 7A to 7C , a method for producing a thin film transistor of sequential perspective views according to the present invention includes the following steps. Firstly, preparing aglass substrate 2 prior to providing a positivephotosensitive coating 3 on theglass substrate 2 in a spin-coating manner as shown inFIG. 7A . Secondly, providing atransparent mold plate 1, which then has a plurality of ladderopaque protrusions 11 in accordance with a predetermined pattern having the different depth. Thirdly, inFIG. 7B , thetransparent mold plate 1 is controlled to press closely to the positivephotosensitive coating 3 of theglass substrate 2 with uniform pressure, and non-contacting to theglass substrate 2. The positivephotosensitive coating 3 is a kind of fluid, so that the positivephotosensitive coating 3 is forced with a at least two predetermined depth by the ladderopaque protrusions 11 and flows to fill a space between thetransparent mold plate 1 and theglass substrate 2. A part of the positivephotosensitive coating 3, which is not shielded under theopaque protrusions 1, is exposed via aUV light 4.FIG. 7C shows that the other part of the positivephotosensitive coating 3, which is shielded under the ladderopaque protrusions 1 and not exposed. thereby, a part of the unshielded positivephotosensitive coating 3 is removed via a chemical solvent, after thetransparent mold plate 1 is separated from theglass substrate 2. Therefore, the positivephotosensitive coating 3 is finally formed with the predetermined pattern having at least two different depths. The positivephotosensitive coating 3 can be made of semiconductor, conductive or insulating materials. The thin film transistor is formed after the positivephotosensitive coating 3 is pressed, cured, and cleaned in a sequential manner. Thetransparent mold plate 1 is made of glass material or quartz; the ladderopaque protrusions 11 are made of metallic material, such as Cr, Mo or W. At this stage the height of the ladderopaque protrusions 11 are a little less than their required height at the end of the process. - The
transparent mold plate 1 is cleaned by part of the conventional semiconductor process. Furthermore, thetransparent mold plate 1 can be deposed with an adhesion layer 5 (a kind of a metallic oxide) prior to being disposed with the protrusions 11 (a kind of a metallic thin film) wherein theadhesion layer 5 has a coefficient of thermal expansion ranging between those of thetransparent mold plate 1 and theopaque protrusions 11. Theadhesion layer 5 is made of a metallic oxide that is made from a predetermined metal. The predetermined metal is one of the transition metals, which includes Cr, Mo or W; and the metallic oxide is a transition-metal oxide corresponding to the predetermined metal. According to a proffered embodiment, thetransparent mold plate 1 is deposed with a chromium oxide, which has a thickness of less than 500 .ANG. Thetransparent mold plate 1 with the chromium oxide is then further deposited with a layer of chromium (Cr). The layer of chromium has a real thickness a little less than the anticipated predetermined depth of the predetermined pattern, and a difference, between the real thickness and the anticipated depth, exists due to the forcing pressure of thetransparent mold plate 1 and properties of viscosity of theopaque protrusions 11 and the negativephotosensitive coating 3. The difference should be within or no more than 10%. The layer of theprotrusions 11, the metallic thin film, and the layer ofadhesion layer 5, metallic oxide, are further processed by photo and etching processes (like dry-etching, wet etching, using an E-beam process or laser writing) simultaneously, so as to form as a plurality of theprotrusions 11 corresponding to the predetermined pattern. After theprotrusions 11 are defined, a transparent material (like Teflon) will be deposed onto a surface each of theprotrusions 11. Because Teflon is de-wetted from the negativephotosensitive coating 3, Teflon is called adewetting layer 6. - An image sensor is provided in order to align with both of the
transparent mold plate 1 and theglass substrate 2. The image sensor is a charge coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) selectively. - Advantages of the present invention are summarized as follows:
- 1. To replace the conventional semiconductor process with simple steps, so as to improve efficiency and save on production costs.
- 2. To adjust the predetermined at least two different depths of the desired pattern directly with the chemical solvent, without additional etching or other processes; this will also lower costs.
- 3. The method can be practiced in each layer of the thin film transistor.
- 4. The protrusions are made of metal materials with rare deformation, so they are more precise and accurate.
- It should be apparent to those skilled in the art that the above description is only illustrative of specific embodiments and examples of the invention. The invention should therefore cover various modifications and variations made to the herein-described structure and operations of the invention, provided they fall within the scope of the invention as defined in the following appended claims.
Claims (15)
Priority Applications (1)
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US13/494,510 US20120256302A1 (en) | 2004-08-31 | 2012-06-12 | Method for producing a thin film transistor and a device of the same |
Applications Claiming Priority (5)
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TW093126251A TWI264823B (en) | 2004-08-31 | 2004-08-31 | Thin film transistor manufacture method and structure therefor |
TW93126251 | 2004-08-31 | ||
US10/995,479 US20060046203A1 (en) | 2004-08-31 | 2004-11-24 | Method for producing a thin film transistor and a device of the same |
US12/353,345 US8268538B2 (en) | 2004-08-31 | 2009-01-14 | Method for producing a thin film transistor |
US13/494,510 US20120256302A1 (en) | 2004-08-31 | 2012-06-12 | Method for producing a thin film transistor and a device of the same |
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US12/353,345 Division US8268538B2 (en) | 2004-08-31 | 2009-01-14 | Method for producing a thin film transistor |
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US13/494,510 Abandoned US20120256302A1 (en) | 2004-08-31 | 2012-06-12 | Method for producing a thin film transistor and a device of the same |
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US20090121325A1 (en) | 2009-05-14 |
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