US20120251746A1 - Device housing and method for making the same - Google Patents
Device housing and method for making the same Download PDFInfo
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- US20120251746A1 US20120251746A1 US13/215,682 US201113215682A US2012251746A1 US 20120251746 A1 US20120251746 A1 US 20120251746A1 US 201113215682 A US201113215682 A US 201113215682A US 2012251746 A1 US2012251746 A1 US 2012251746A1
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- substrate
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- sccm
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000005260 corrosion Methods 0.000 claims abstract description 21
- 230000007797 corrosion Effects 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- RJHFCSOOXUKBFH-UHFFFAOYSA-N [N].[O].[Cr] Chemical compound [N].[O].[Cr] RJHFCSOOXUKBFH-UHFFFAOYSA-N 0.000 claims abstract description 4
- -1 aluminum-oxygen-nitrogen Chemical compound 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 229910018509 Al—N Inorganic materials 0.000 claims description 2
- 229910018516 Al—O Inorganic materials 0.000 claims description 2
- 229910019590 Cr-N Inorganic materials 0.000 claims description 2
- 229910019588 Cr—N Inorganic materials 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 23
- 238000000151 deposition Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 231100001010 corrosive Toxicity 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 1
- 229910000553 6063 aluminium alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000007591 painting process Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/1266—O, S, or organic compound in metal component
- Y10T428/12667—Oxide of transition metal or Al
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1317—Multilayer [continuous layer]
Definitions
- the present disclosure relates to device housings, particularly to a device housing having a corrosion resistance property and a method for making the device housing.
- Aluminum alloy is widely used for its excellent properties.
- protective layers may be formed on the aluminum alloy by anodizing, painting, or vacuum depositing.
- the anodizing and painting processes are not environmentally friendly, and protective layers formed by vacuum depositing may have pinholes and cracks formed therein. These pinholes and cracks allow corrosives to permeate the layers, which causes a galvanic corrosion to the layers and the underlying aluminum alloy.
- FIG. 1 is a cross-sectional view of an exemplary embodiment of a device housing.
- FIG. 2 is an overhead view of an exemplary embodiment of a vacuum sputtering device.
- FIG. 1 shows a device housing 10 according to an exemplary embodiment.
- the device housing 10 includes an aluminum alloy substrate 11 , and a compound corrosion resistant layer 13 formed on a surface of the substrate 11 .
- the compound corrosion resistant layer 13 includes two crystalline films 131 and a non-crystalline film 133 formed between the two crystalline films 131 .
- One of the crystalline films 131 is directly formed on the substrate 11 .
- Each crystalline film 131 may be a chromium-oxygen-nitrogen (Cr—O—N) film or an aluminum-oxygen-nitrogen (Al—O—N) film in which columnar crystals having a plurality of inter-crystal pores (not shown) are formed.
- the crystalline film 131 contains Cr—O and Cr—N crystalline phases, or Al—O and Al—N crystalline phases. Each phase inhibits the growth of the other phase, so the size of the crystalline grains in the crystalline film 13 is reduced and the density of the crystalline film 131 is enhanced, which enables the device housing 10 to have a good corrosion resistance property.
- Each crystalline film 131 has a thickness of about 300 nm-800 nm.
- the non-crystalline film 133 may be an aluminum oxide (Al 2 O 3 ) film or a silicon dioxide (SiO 2 ) film.
- the non-crystalline film 133 has a thickness of about 300 ⁇ m-500 ⁇ m.
- the non-crystalline film 133 has an internal disorder structure.
- the non-crystalline film 133 is also a hard coating, which has a high hardness.
- the non-crystalline film 133 having an internal disorder structure obstructs the inter-crystal pores of the two crystalline films 131 from connection. This prevents corrosives from permeating the films 131 and 133 and affecting the substrate 11 , thus reducing the corrosion in the device housing 10 and achieves an excellent corrosion resistance property.
- the crystalline films 131 and the non-crystalline film 133 may be all formed by vacuum deposition, such as vacuum sputtering or evaporation deposition.
- a method for making the device housing 10 may include the following steps:
- the substrate 11 is pre-treated.
- the pre-treating process may include the following steps:
- the substrate 11 is cleaned in an ultrasonic cleaning device (not shown) filled with ethanol or acetone.
- the substrate 11 is plasma cleaned.
- the substrate 11 may be positioned in a coating chamber 21 of a vacuum sputtering device 20 .
- the coating chamber 21 is fixed with first targets 23 and second targets 24 therein.
- the first targets 23 are made of chromium or aluminum
- the second targets 24 are made of silicon or aluminum.
- the coating chamber 21 is then evacuated to about 8.0 ⁇ 10 ⁇ 3 Pa.
- Argon (Ar) gas having a purity of about 99.999% may be used as a working gas and is fed into the coating chamber 21 at a flow rate of about 500 standard-state cubic centimeters per minute (sccm).
- the substrate 11 may have a bias voltage of about ⁇ 500 V to about ⁇ 800 V, then high-frequency voltage is produced in the coating chamber 21 and the argon gas is ionized to plasma. The plasma then strikes the surface of the substrate 11 to clean the surface of the substrate 11 . Plasma cleaning the substrate 11 may take about 5 minutes (min) to about 10 min. The plasma cleaning process enhances the bond between the substrate 11 and the compound corrosion resistant layer 13 .
- the first targets 23 and the second targets 24 are unaffected by the pre-cleaning process.
- One of the crystalline films 131 may be magnetron sputtered on the pretreated substrate 11 by using the first targets 23 . Magnetron sputtering of the crystalline film 131 is implemented in the coating chamber 21 .
- the internal temperature of the coating chamber 21 may be heated to about 100° C.-150° C.
- Nitrogen (N 2 ) and oxygen (O 2 ) may be used as reaction gases and are fed into the coating chamber 21 at a flow rate of about 20 sccm-40 sccm and about 40 sccm-60 sccm respectively.
- Argon gas may be used as a working gas and is fed into the coating chamber 21 at a flow rate of about 130 sccm-200 sccm.
- the ratio of partial pressure of the nitrogen may be about 5%-20% with regards to the total gases in the coating chamber 21
- the ratio of partial pressure of the oxygen may be about 15%-40% with regards to the total gases in the coating chamber 21 .
- a power of about 5 kilowatt (KW)-8 KW is applied on the first targets 23 , and then aluminum atoms or chromium atoms are sputtered off from the first targets 23 .
- the aluminum or chromium atoms, nitrogen atoms, and oxygen atoms are then ionized in an electrical field in the coating chamber 21 .
- the ionized aluminum or chromium chemically reacts with the ionized nitrogen and oxygen and deposits on the substrate 11 to form the crystalline film 131 .
- the substrate 11 may have a bias voltage of about ⁇ 100 V to about ⁇ 200 V.
- Depositing of the crystalline film 131 may take about 30 min-150 min.
- the non-crystalline film 133 may be magnetron sputtered on the crystalline film 131 by using the second targets 24 . Magnetron sputtering of the non-crystalline film 133 is implemented in the coating chamber 21 .
- the internal temperature of the coating chamber 21 may be maintained at about 100° C.-150° C.
- Oxygen (O 2 ) may be used as a reaction gas and is fed into the coating chamber 21 at a flow rate of about 50 sccm-150 sccm.
- Argon gas may be used as a working gas and is fed into the coating chamber 21 at a flow rate of about 130 sccm-200 sccm.
- the ratio of partial pressure of the oxygen may be about 30%-90% with regards to the total gases in the coating chamber 21 .
- a power of about 6 KW-8 KW is applied on the second targets 24 , and then silicon atoms or aluminum atoms are sputtered off from the second targets 24 .
- the silicon or aluminum atoms and oxygen atoms are then ionized in an electrical field in the coating chamber 21 .
- the ionized silicon or aluminum chemically reacts with the ionized oxygen and deposits on the crystalline film 131 to form the non-crystalline film 133 .
- the substrate 11 may have a bias voltage of about ⁇ 100 V to about ⁇ 200 V.
- Depositing of the non-crystalline film 133 may take about 20 min-70 min.
- the step of magnetron sputtering the crystalline film 131 is repeated to form the other crystalline film 131 on the non-crystalline film 133 and forms the compound corrosion resistant layer 13 .
- the substrate 11 is made of 6061 or 6063 aluminum alloy.
- Plasma cleaning the substrate 11 the flow rate of argon gas is 500 sccm; the substrate 11 has a bias voltage of ⁇ 500 V; plasma cleaning of the substrate 11 takes 8 min.
- the flow rate of argon gas is 180 sccm, the flow rate of nitrogen is 20 sccm, the flow rate of oxygen is 40 sccm; the ratio of partial pressure of nitrogen is 7%, the ratio of partial pressure of oxygen is 17%; the substrate 11 has a bias voltage of ⁇ 170 V; the first targets 23 are made of chromium and are applied with a power of 6 KW; the internal temperature of the coating chamber 21 is 120° C.; sputtering of the crystalline film 131 takes 60 min; the crystalline film 131 has a thickness of 500 nm.
- the flow rate of argon gas is 180 sccm, the flow rate of oxygen is 80 sccm; the ratio of partial pressure of oxygen is 30%; the substrate 11 has a bias voltage of ⁇ 150 V; the second targets 24 are made of silicon and are applied with a power of 6 KW; the internal temperature of the coating chamber 21 is 120° C.; sputtering of the non-crystalline film 133 takes 70 min; the non-crystalline film 133 has a thickness of 400 nm.
- the substrate 11 is made of 5052 aluminum alloy.
- Plasma cleaning the substrate 11 the flow rate of argon gas is 500 sccm; the substrate 11 has a bias voltage of ⁇ 600 V; plasma cleaning of the substrate 11 takes 5 min.
- the flow rate of argon gas is 150 sccm, the flow rate of nitrogen is 30 sccm, the flow rate of oxygen is 60 sccm; the ratio of partial pressure of nitrogen is 12.5%, the ratio of partial pressure of oxygen is 25%; the substrate 11 has a bias voltage of ⁇ 200 V; the first targets 23 are made of aluminum and are applied with a power of 8 KW; the internal temperature of the coating chamber 21 is 150° C.; sputtering of the crystalline film 131 takes 90 min; the crystalline film 131 has a thickness of 300 nm.
- the flow rate of argon gas is 150 sccm, the flow rate of oxygen is 100 sccm; the ratio of partial pressure of oxygen is 40%; the substrate 11 has a bias voltage of ⁇ 150 V; the second targets 24 are made of silicon and are applied with a power of 8 KW; the internal temperature of the coating chamber 21 is 150° C.; sputtering of the non-crystalline film 133 takes 60 min; the non-crystalline film 133 has a thickness of 350 nm.
- a salt spray test has been performed on the device housings 10 described in the above examples 1-2.
- the salt spray test used a sodium chloride (NaCl) solution having a mass concentration of 5% at a temperature of 35° C.
- the test indicated that the corrosion resistance property of the device housing 10 lasted longer than 96 hours.
- the device housing 10 has an excellent corrosion resistance property.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
- 1. Technical Field
- The present disclosure relates to device housings, particularly to a device housing having a corrosion resistance property and a method for making the device housing.
- 2. Description of Related Art
- Aluminum alloy is widely used for its excellent properties. To protect the aluminum alloy from corrosion, protective layers may be formed on the aluminum alloy by anodizing, painting, or vacuum depositing. However, the anodizing and painting processes are not environmentally friendly, and protective layers formed by vacuum depositing may have pinholes and cracks formed therein. These pinholes and cracks allow corrosives to permeate the layers, which causes a galvanic corrosion to the layers and the underlying aluminum alloy.
- Therefore, there is room for improvement within the art.
- Many aspects of the disclosure can be better understood with reference to the following figures. The components in the figures are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the disclosure. Moreover, in the drawings like reference numerals designate corresponding parts throughout the several views.
-
FIG. 1 is a cross-sectional view of an exemplary embodiment of a device housing. -
FIG. 2 is an overhead view of an exemplary embodiment of a vacuum sputtering device. -
FIG. 1 shows adevice housing 10 according to an exemplary embodiment. Thedevice housing 10 includes analuminum alloy substrate 11, and a compound corrosionresistant layer 13 formed on a surface of thesubstrate 11. - The compound corrosion
resistant layer 13 includes twocrystalline films 131 and anon-crystalline film 133 formed between the twocrystalline films 131. One of thecrystalline films 131 is directly formed on thesubstrate 11. - Each
crystalline film 131 may be a chromium-oxygen-nitrogen (Cr—O—N) film or an aluminum-oxygen-nitrogen (Al—O—N) film in which columnar crystals having a plurality of inter-crystal pores (not shown) are formed. Thecrystalline film 131 contains Cr—O and Cr—N crystalline phases, or Al—O and Al—N crystalline phases. Each phase inhibits the growth of the other phase, so the size of the crystalline grains in thecrystalline film 13 is reduced and the density of thecrystalline film 131 is enhanced, which enables thedevice housing 10 to have a good corrosion resistance property. Eachcrystalline film 131 has a thickness of about 300 nm-800 nm. - The non-crystalline
film 133 may be an aluminum oxide (Al2O3) film or a silicon dioxide (SiO2) film. Thenon-crystalline film 133 has a thickness of about 300 μm-500 μm. Thenon-crystalline film 133 has an internal disorder structure. Thenon-crystalline film 133 is also a hard coating, which has a high hardness. - As mentioned above, the
non-crystalline film 133 having an internal disorder structure obstructs the inter-crystal pores of the twocrystalline films 131 from connection. This prevents corrosives from permeating thefilms substrate 11, thus reducing the corrosion in thedevice housing 10 and achieves an excellent corrosion resistance property. - The
crystalline films 131 and thenon-crystalline film 133 may be all formed by vacuum deposition, such as vacuum sputtering or evaporation deposition. - A method for making the
device housing 10 may include the following steps: - The
substrate 11 is pre-treated. The pre-treating process may include the following steps: - The
substrate 11 is cleaned in an ultrasonic cleaning device (not shown) filled with ethanol or acetone. - The
substrate 11 is plasma cleaned. Referring toFIG. 2 , thesubstrate 11 may be positioned in acoating chamber 21 of avacuum sputtering device 20. Thecoating chamber 21 is fixed withfirst targets 23 andsecond targets 24 therein. Thefirst targets 23 are made of chromium or aluminum, thesecond targets 24 are made of silicon or aluminum. Thecoating chamber 21 is then evacuated to about 8.0×10−3 Pa. Argon (Ar) gas having a purity of about 99.999% may be used as a working gas and is fed into thecoating chamber 21 at a flow rate of about 500 standard-state cubic centimeters per minute (sccm). Thesubstrate 11 may have a bias voltage of about −500 V to about −800 V, then high-frequency voltage is produced in thecoating chamber 21 and the argon gas is ionized to plasma. The plasma then strikes the surface of thesubstrate 11 to clean the surface of thesubstrate 11. Plasma cleaning thesubstrate 11 may take about 5 minutes (min) to about 10 min. The plasma cleaning process enhances the bond between thesubstrate 11 and the compound corrosionresistant layer 13. Thefirst targets 23 and thesecond targets 24 are unaffected by the pre-cleaning process. - One of the
crystalline films 131 may be magnetron sputtered on the pretreatedsubstrate 11 by using thefirst targets 23. Magnetron sputtering of thecrystalline film 131 is implemented in thecoating chamber 21. The internal temperature of thecoating chamber 21 may be heated to about 100° C.-150° C. Nitrogen (N2) and oxygen (O2) may be used as reaction gases and are fed into thecoating chamber 21 at a flow rate of about 20 sccm-40 sccm and about 40 sccm-60 sccm respectively. Argon gas may be used as a working gas and is fed into thecoating chamber 21 at a flow rate of about 130 sccm-200 sccm. The ratio of partial pressure of the nitrogen may be about 5%-20% with regards to the total gases in thecoating chamber 21, the ratio of partial pressure of the oxygen may be about 15%-40% with regards to the total gases in thecoating chamber 21. A power of about 5 kilowatt (KW)-8 KW is applied on thefirst targets 23, and then aluminum atoms or chromium atoms are sputtered off from thefirst targets 23. The aluminum or chromium atoms, nitrogen atoms, and oxygen atoms are then ionized in an electrical field in thecoating chamber 21. The ionized aluminum or chromium chemically reacts with the ionized nitrogen and oxygen and deposits on thesubstrate 11 to form thecrystalline film 131. During the depositing process, thesubstrate 11 may have a bias voltage of about −100 V to about −200 V. Depositing of thecrystalline film 131 may take about 30 min-150 min. - The
non-crystalline film 133 may be magnetron sputtered on thecrystalline film 131 by using thesecond targets 24. Magnetron sputtering of thenon-crystalline film 133 is implemented in thecoating chamber 21. The internal temperature of thecoating chamber 21 may be maintained at about 100° C.-150° C. Oxygen (O2) may be used as a reaction gas and is fed into thecoating chamber 21 at a flow rate of about 50 sccm-150 sccm. Argon gas may be used as a working gas and is fed into thecoating chamber 21 at a flow rate of about 130 sccm-200 sccm. The ratio of partial pressure of the oxygen may be about 30%-90% with regards to the total gases in thecoating chamber 21. A power of about 6 KW-8 KW is applied on thesecond targets 24, and then silicon atoms or aluminum atoms are sputtered off from thesecond targets 24. The silicon or aluminum atoms and oxygen atoms are then ionized in an electrical field in thecoating chamber 21. The ionized silicon or aluminum chemically reacts with the ionized oxygen and deposits on thecrystalline film 131 to form thenon-crystalline film 133. During the depositing process, thesubstrate 11 may have a bias voltage of about −100 V to about −200 V. Depositing of thenon-crystalline film 133 may take about 20 min-70 min. - The step of magnetron sputtering the
crystalline film 131 is repeated to form the othercrystalline film 131 on thenon-crystalline film 133 and forms the compound corrosionresistant layer 13. - Specific examples of making the
device housing 10 are described below. The ultrasonic cleaning in these specific examples may be substantially the same as described above so it is not described here again. Additionally, the process of magnetron sputtering the compound corrosionresistant layer 13 in the specific examples is substantially the same as described above, and the specific examples mainly emphasize the different process parameters of making thedevice housing 10. - The
substrate 11 is made of 6061 or 6063 aluminum alloy. - Plasma cleaning the substrate 11: the flow rate of argon gas is 500 sccm; the
substrate 11 has a bias voltage of −500 V; plasma cleaning of thesubstrate 11 takes 8 min. - Sputtering to form a
crystalline film 131 on the substrate 11: the flow rate of argon gas is 180 sccm, the flow rate of nitrogen is 20 sccm, the flow rate of oxygen is 40 sccm; the ratio of partial pressure of nitrogen is 7%, the ratio of partial pressure of oxygen is 17%; thesubstrate 11 has a bias voltage of −170 V; thefirst targets 23 are made of chromium and are applied with a power of 6 KW; the internal temperature of thecoating chamber 21 is 120° C.; sputtering of thecrystalline film 131 takes 60 min; thecrystalline film 131 has a thickness of 500 nm. - Sputtering to form
non-crystalline film 133 on the crystalline film 131: the flow rate of argon gas is 180 sccm, the flow rate of oxygen is 80 sccm; the ratio of partial pressure of oxygen is 30%; thesubstrate 11 has a bias voltage of −150 V; thesecond targets 24 are made of silicon and are applied with a power of 6 KW; the internal temperature of thecoating chamber 21 is 120° C.; sputtering of thenon-crystalline film 133 takes 70 min; thenon-crystalline film 133 has a thickness of 400 nm. - Repeats the step of sputtering the
crystalline film 131 to form anothercrystalline film 131 on thenon-crystalline film 133. - The
substrate 11 is made of 5052 aluminum alloy. - Plasma cleaning the substrate 11: the flow rate of argon gas is 500 sccm; the
substrate 11 has a bias voltage of −600 V; plasma cleaning of thesubstrate 11 takes 5 min. - Sputtering to form a
crystalline film 131 on the substrate 11: the flow rate of argon gas is 150 sccm, the flow rate of nitrogen is 30 sccm, the flow rate of oxygen is 60 sccm; the ratio of partial pressure of nitrogen is 12.5%, the ratio of partial pressure of oxygen is 25%; thesubstrate 11 has a bias voltage of −200 V; thefirst targets 23 are made of aluminum and are applied with a power of 8 KW; the internal temperature of thecoating chamber 21 is 150° C.; sputtering of thecrystalline film 131 takes 90 min; thecrystalline film 131 has a thickness of 300 nm. - Sputtering to form
non-crystalline film 133 on the crystalline film 131: the flow rate of argon gas is 150 sccm, the flow rate of oxygen is 100 sccm; the ratio of partial pressure of oxygen is 40%; thesubstrate 11 has a bias voltage of −150 V; thesecond targets 24 are made of silicon and are applied with a power of 8 KW; the internal temperature of thecoating chamber 21 is 150° C.; sputtering of thenon-crystalline film 133 takes 60 min; thenon-crystalline film 133 has a thickness of 350 nm. - Repeats the step of sputtering the
crystalline film 131 to form anothercrystalline film 131 on thenon-crystalline film 133. - A salt spray test has been performed on the
device housings 10 described in the above examples 1-2. The salt spray test used a sodium chloride (NaCl) solution having a mass concentration of 5% at a temperature of 35° C. The test indicated that the corrosion resistance property of thedevice housing 10 lasted longer than 96 hours. Thus, thedevice housing 10 has an excellent corrosion resistance property. - It is believed that the exemplary embodiment and its advantages will be understood from the foregoing description, and it will be apparent that various changes may be made thereto without departing from the spirit and scope of the disclosure or sacrificing all of its advantages, the examples hereinbefore described merely being preferred or exemplary embodiment of the disclosure.
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN201110081194 | 2011-03-31 | ||
CN2011100811949A CN102732824A (en) | 2011-03-31 | 2011-03-31 | Housing and its manufacturing method |
CN201110081194.9 | 2011-03-31 |
Publications (2)
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US20120251746A1 true US20120251746A1 (en) | 2012-10-04 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US9364856B2 (en) * | 2014-04-23 | 2016-06-14 | ScienBiziP Consulting(Shenzhen) Co., Ltd. | Method of coating workpieces |
US20220081352A1 (en) * | 2020-09-14 | 2022-03-17 | Chenfeng Optronics Corporation | Glass plate coated with impact protection film layer |
US20220195605A1 (en) * | 2019-10-04 | 2022-06-23 | Showa Denko K.K. | Corrosion-resistant member |
US20220243072A1 (en) * | 2020-03-11 | 2022-08-04 | Showa Denko K.K. | Corrosion-resistant member |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102691045A (en) * | 2011-03-23 | 2012-09-26 | 鸿富锦精密工业(深圳)有限公司 | Aluminum or aluminum alloy shell and manufacturing method thereof |
US9849516B2 (en) * | 2012-12-21 | 2017-12-26 | Sandvik Intellectual Property Ab | Coated cutting tool and method for manufacturing the same |
CN108315705B (en) * | 2018-04-12 | 2020-07-28 | 西安交通大学 | Structure for improving crystallization resistance of amorphous metal film material and preparation method thereof |
Family Cites Families (7)
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US4769291A (en) * | 1987-02-02 | 1988-09-06 | The Boc Group, Inc. | Transparent coatings by reactive sputtering |
SE528108C2 (en) * | 2004-07-13 | 2006-09-05 | Sandvik Intellectual Property | Coated cemented carbide inserts, especially for turning steel, and ways of manufacturing the same |
CN1870863B (en) * | 2005-05-28 | 2011-06-08 | 鸿富锦精密工业(深圳)有限公司 | Casing of portable electronic device and its manufacturing method |
CN100553964C (en) * | 2006-11-29 | 2009-10-28 | 吉林大学 | The method of a kind of nanometer multilayer membrane material and raising multi-layer film structure high-temperature stability |
CN101220454B (en) * | 2008-01-16 | 2012-07-18 | 哈尔滨工业大学 | Method for manufacturing surface antimicrobial, abrasion-proof metal/ceramic nano-multilayer film |
US10745795B2 (en) * | 2008-04-29 | 2020-08-18 | Agency For Science, Technology And Research | Inorganic graded barrier film and methods for their manufacture |
CN101628492B (en) * | 2008-07-15 | 2012-09-26 | 比亚迪股份有限公司 | Film coating material and preparation method thereof |
-
2011
- 2011-03-31 CN CN2011100811949A patent/CN102732824A/en active Pending
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9364856B2 (en) * | 2014-04-23 | 2016-06-14 | ScienBiziP Consulting(Shenzhen) Co., Ltd. | Method of coating workpieces |
US20220195605A1 (en) * | 2019-10-04 | 2022-06-23 | Showa Denko K.K. | Corrosion-resistant member |
US20220243072A1 (en) * | 2020-03-11 | 2022-08-04 | Showa Denko K.K. | Corrosion-resistant member |
US20220081352A1 (en) * | 2020-09-14 | 2022-03-17 | Chenfeng Optronics Corporation | Glass plate coated with impact protection film layer |
Also Published As
Publication number | Publication date |
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CN102732824A (en) | 2012-10-17 |
US8293345B1 (en) | 2012-10-23 |
TWI496917B (en) | 2015-08-21 |
TW201239120A (en) | 2012-10-01 |
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