US20120168624A1

US20120168624A1 - Measurement system and imager comprising such a system

Info

Publication number: US20120168624A1
Application number: US13/325,498
Authority: US
Inventors: Bertrand Dupont; Michael Tchagaspanian
Original assignee: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Current assignee: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date: 2010-12-22
Filing date: 2011-12-14
Publication date: 2012-07-05
Also published as: JP6153017B2; FR2969763B1; US8785854B2; JP2012132919A; FR2969763A1; EP2469254A1

Abstract

A measurement system including a reference resistive sensor traversed by a reference current, with a reference arm having a reference resistance and being traversed by the reference current in order to produce a reference voltage between its ends, at least one measurement resistive sensor traversed by a measurement current that depends on a measurement taken by the measurement resistive sensor, a measurement mirror arm traversed by a current, and a device for measuring the difference between the measurement current and the current traversing the measurement mirror arm. The resistance of the measurement mirror arm of each measurement resistive sensor is equal to the reference resistance and the measurement system further includes a device for applying, to each measurement mirror arm, the reference voltage. The device for applying the reference voltage being designed to be isolated to a current of the measurement mirror arm when the reference voltage is applied.

Description

This invention relates to measurement systems using resistive sensors, which are sensors whose resistance varies according to the physical quantity that they measure.
It particularly applies to the field of imagers, where resistive sensors are bolometers, such as infrared bolometers whose resistance varies according to the infrared radiation received, or bolometers that are sensitive to other frequencies of electromagnetic radiation, such as terahertz frequencies.
In the remainder of the description and in the claims, the equality of two electrical values (voltage, current, resistance, etc.) means that these two values are equal with only a few technological dispersions.
Moreover, terms like “high”, “low”, “row”, and “column” will be used in reference to the orientation of the drawings for clarity in describing items. They are not intended to be limited specifically to the actual orientation and geometric layout of these elements.
An infrared imager provides an image in the form of a pixel array. In uncooled infrared imaging, bolometers are used to capture the infrared flux coming from a scene. There is usually one bolometer per pixel in order to produce an infrared image of the scene, each bolometer being integrated into a respective bolometric cell. Therefore, the infrared imager comprises an array of bolometric cells.
A bolometer is a resistive sensor whose resistance varies with the temperature and therefore with the infrared flux coming from the scene. To read the resistance value of the bolometer, which corresponds to an infrared flux, it is known to apply a voltage and to measure the current passing through the bolometer.
However, the variation in current related to a variation in infrared flux of 50 Kelvin is around a percent. It is therefore necessary to remove most of the measured current in order to have a current to integrate that is as small as possible corresponding to the resistance variations of the sensitive bolometer in response to the infrared flux from the scene. This removal of current is called “baselining”.
For this, it is known to use reference bolometers that are subjected to little or none of the effects of the infrared flux coming from the scene. These reference bolometers are either “column footing”, meaning that there is one reference bolometer common to all of the bolometers in a column, or “row heading”, meaning that there are one or more reference bolometers common to all of the bolometers in a row.
Thus, with reference to FIG. 1, in this second case, it is known to use an infrared imager comprising:

- a resistive sensor such as a reference bolometer 2,
- means 4, 6 for applying a voltage to the reference bolometer 2, such that the reference bolometer is traversed by a reference current,
- a reference arm 8 with a reference resistance 10 and connected such that it is traversed by the reference current to produce a reference voltage between its ends,
- at least one resistive sensor, such as a measurement bolometer 12, and for each measurement bolometer 12:
- means 4, 16 for applying a voltage to the measurement bolometer, such that the measurement bolometer is traversed by a measurement current that depends on the exposure of the measurement bolometer to infrared radiation,
- a mirror measurement arm 18 with a resistance 20 and intended to be traversed by a current that is equal to the reference current,
- means 22 for measuring the difference in current between the measurement current and the current traversing the mirror measurement arm 18.

In such an infrared imager, the means for applying a voltage to the reference bolometers and measurement bolometers comprise, for each bolometer, on the one hand, a power supply line 4 that polarizes a bolometer terminal and, on the other hand, a transistor 6 whose power source polarizes the other bolometer terminal.
Moreover, transistors 24, 26 in a mirror current arrangement are used to replicate the reference current in each of the mirror measurement arms of the given row in the array.
In such an arrangement, a first transistor 24 is diode-connected, which involves that it adjusts its gate potential to allow the arriving current that arrives to its drain to flow. In each measurement arm, the gate of a second transistor 26, which is not diode-connected, is connected to the gate of the first transistor 24 such that said second transistor 26 copies the current traversing the first transistor 24 between its source and its drain.
This solution provides two advantages, namely a significant rejection of power supply noise and low temperature drift, given that the reference circuit and the measurement circuits are very similar in terms of the components they use.
However, the current trend is to lower power supply voltages, which requires also reducing the values of bolometric resistances in order to maintain acceptable levels of performance.
However, using such bolometers leads to an increase in the reference current. This results in a higher gate potential of the transistor 24 and therefore also of the drain of the transistor 6 for polarizing the reference bolometer.
However, this polarization transistor 6 must operate in saturated mode, which is not possible if the drain potential is too high.
Therefore, the known infrared imager is incompatible with the current trend of lowering power supply voltages.
Moreover, the reduction in the values of bolometric resistances significantly limits the readout electronics such that, in order to keep the noise from this readout electronics insignificant relative to the bolometric cells, it becomes necessary to use large transistors with a high capacitance between their gate and their substrate. This is added to the fact that array formats always tend to grow larger such that the combined capacitance of the measurement transistors becomes very high and difficult to charge in a time that is compatible with the constraints of video rate.
Therefore, the known infrared imager is incompatible with the current trend of lowering power supply voltages and increasing the size of the array of bolometric cells.
It may therefore be desirable to provide a measurement system that can overcome at least some of the above problems and constraints.
The invention therefore relates to a measurement system comprising:

- a reference resistive sensor,
- means for applying a voltage to the reference resistive sensor, such that the reference resistive sensor is traversed by a reference current,
- a reference arm comprising a reference resistance and connected to the reference resistive sensor so as to be traversed by the reference current
- at least one measurement resistive sensor,
  and, for each measurement resistive sensor:
- means for applying a voltage to the measurement resistive sensor, such that the measurement resistive sensor is traversed by a measurement current that depends on the exposure of the measurement bolometer to infrared radiation,
- a mirror measurement arm comprising a resistance and intended to be traversed by a current that is equal to the reference current,
- a measurement transistor with a gate and a source, said source being connected to one end of the measurement mirror arm,
- means for measuring the difference in current between the measurement current and the current traversing the mirror measurement arm,
  the measurement system comprising:
- a reference mirror arm comprising a resistance,
- a reference transistor with a gate, a drain, and a source, said source being connected to one end of the reference mirror arm,
- an operational amplifier with one positive input connected to one end of the reference arm, one negative input connected to the source of the reference transistor, and one output connected to the gate of the reference transistor,
  and the gate of each measurement transistor is connected to the output of the operational amplifier.

Therefore, thanks to the invention, the measurement system no longer needs to include transistors in a current mirror arrangement such that there are no longer problems related to the drain potential of the transistor for polarizing the reference resistive sensor and to charging the mirror transistors.
Also optionally, the measurement system further comprises an electrical ground that connects the other ends of the reference arms and reference mirror arms.
Also optionally, the measurement system further comprises, for each measurement mirror arm, an electrical ground that is connected to the other end of the measurement mirror arm.
Also optionally:

- the reference mirror arm is one of the measurement mirror arms, and
- the reference transistor is the measurement transistor connected to the reference mirror arm.

Also optionally:

- the reference mirror arm is different from the measurement mirror arms, and
- the reference transistor is different from the measurement transistors.

Also optionally:

- the means for applying a voltage to the reference resistive sensor comprises a first transistor with a source connected to a reference resistive sensor terminal and a drain, and
- the measurement system further comprises means for polarizing the drain of the first transistor to a set potential.

Also optionally, the means for polarizing the drain of the first resistive sensor comprise:

- a second transistor with a gate, a drain, and a source, said source being connected to the drain of the first transistor, and

an operational amplifier with a positive input intended to receive the set potential, a negative input connected to the source of the second transistor, and an output connected to the gate of the second transistor.
Also optionally, the resistance of the measurement mirror arm of each measurement resistive sensor has a value equal to that of the reference resistance.
Also optionally, the resistance of the reference mirror arm has a value equal to that of the reference resistance.
The invention also relates to an imager comprising a measurement system according to the invention, in which the resistive sensors are bolometers.

The invention will be better understood using the following description, given purely as an example and referring to the accompanying drawings, in which:

FIG. 1 is a circuit diagram for an infrared imager from the prior art, described above,

FIG. 2 is a general diagram of an infrared imager implementing the invention,

FIG. 3 is a circuit diagram of a part of a row of cells of the infrared imager in FIG. 2 according to a first embodiment of the invention, and

FIG. 4 is a circuit diagram of a part of a row of cells of the infrared imager in FIG. 2 according to a second embodiment of the invention.

With reference to FIG. 2, an infrared imager 100 comprises bolometric cells 102 _i,jarranged in an arrow of rows 104 _iand columns 106 _j.
With reference to FIG. 3, each row 104 _icomprises a reference cell 102 _i,1followed by multiple measurement cells 102 _i,2, 102 _i,3.
The reference cell 102 _i,1comprises a reference bolometer 202, designed to be insensitive to infrared radiation received by the infrared imager, at least less sensitive than the measurement bolometers that will be introduced later. The reference bolometer 202 is, for example, a thermalized bolometer or even a bolometer covered by a screen.
The reference cell 102 _i,1further comprises means 204, 206 for applying a voltage to the reference bolometer 202, such that the reference bolometer is traversed by a reference current i_ref.
In the described example, the means 204, 206 first comprise a power supply line 204 connected to an upper terminal of the reference bolometer 202. The power supply line 204 is designed to polarize this upper terminal with a predetermined potential VP, such as 3.3 or 5 volts. The means 204, 206 further comprise means for polarizing a lower terminal of the reference bolometer 202. In the described example, the means of polarization comprise a p-MOS transistor 206 with a gate, a drain, and a source, the source being connected to the lower terminal of the reference bolometer 202. The means of polarization further comprise means (not shown) for polarizing the gate of the p-MOS transistor 206 to a potential V₁. Therefore, it is possible to set the potential of the source of the p-MOS transistor 206, and therefore the lower terminal of the reference bolometer 202, based on the potential V₁.
However, this setting is possible only if the potential of the drain of the p-MOS transistor 206 is stabilized. Otherwise, the source potential is derived based on the drain potential. This phenomenon is sometimes called the “Early effect”. Therefore, the reference cell 102 _i,1further comprises means 210, 212 for polarizing the drain of the p-MOS transistor 206.
These means of polarization 210, 212 first comprise an operational amplifier 210 with an output, a positive input, and a negative input, the negative input being connected to the drain of the p-MOS transistor 206. The means of polarization 210, 212 also comprise a p-MOS transistor 212 with a drain, a gate connected to the output of the operational amplifier 210, and a source connected to the negative terminal of the operational amplifier 210. Therefore, there is a feedback loop between the negative input and the output of the operational amplifier 210 such that, during operation, the potential of the negative input of the operational amplifier 210, and thus of the source of the p-MOS transistor 212, quickly becomes equal to the potential of the positive terminal of the operational amplifier 210. Moreover, the presence of the p-MOS transistor 212 in the feedback loop isolates the current that flows between the source and the drain of the p-MOS transistor 212 from the current generated at the output of the operational amplifier 210.
In the remainder of the description, such an arrangement of an operational amplifier and a transistor will be called a “non-disruptive polarizer arrangement” because it makes it possible to polarize the source of the transistor to the potential of the positive input of the operational amplifier without disrupting the current flowing between the source and the drain of the transistor.
The means of polarization 210, 212 further comprise means (not shown) for polarizing the positive input of the operational amplifier 210 to a potential V_in, so as to polarize the drain of the p-MOS 206 to this same potential V_in.
The reference cell 102 _i,1further comprises a switch 214 that can be used in another form of baselining than what is described as part of this invention. In the described example, this switch consists of an n-MOS transistor 214.
The reference cell 102 _i,1further comprises a reference arm 216 with a predetermined resistance value R. As such, the reference arm 216 comprises a resistance 218 of value R. The reference arm 216 is connected, at an upper end, to the switch 214, and at a lower end, to an electrical ground M of the infrared imager. Therefore, the reference arm 216 is traversed by the reference current provided by the reference bolometer 202, such that the upper end of the reference arm 216 has a voltage V_Requal to R×i_ref, based on the reference current i_ref, between its ends.
Each measurement cell 102 _i,2, 102 _i,3comprises a measurement bolometer 222 and means 204, 206 for applying a voltage to the measurement bolometer 222, such that the measurement bolometer is traversed by a measurement current i_meas1, i_meas2. In the described example, the means 204, 226 are identical to the means 204, 206 and thus comprise the power supply line 204 and means 226 for polarizing (a p-MOS transistor in the described example) the lower terminal of the measurement bolometer 222. Therefore, it is possible to set the potential of the lower terminal of the measurement bolometer 222, based on potentials V₂, V₃applied to the drain of the given p-MOS transistor.
Every measurement cell 102 _i,2, 102 _i,3further comprises a measurement mirror arm 236 (marked as 236* for the first measurement cell 102 _i,2) intended to be traversed by a current i′_refequal to the reference current i_refas will be explained later. The measurement mirror arm 236*, 236 has the same resistance 238*, 238 as the predetermined resistance R.
So that the reference current i_reftraverses every measurement mirror arm 236*, 236, the infrared imager comprises means 240, 236*, 238*, 242*, 242, M for applying the reference voltage at every measurement mirror arm 236*, 236.
In the described example, the means for applying the reference voltage 240, 236*, 238*, 242*, 242, M comprise an operational amplifier 240 and an n-MOS transistor 242* arranged as a “non-disruptive polarizer”, with the positive input of the operational amplifier 240 connected to the upper end of the reference arm 216, the drain of the n-MOS transistor N-MOS 242* connected to the drain of the p-MOS transistor 226 of the first measurement cell 102 _i,2and the source of the n-MOS transistor 242* connected to the upper end of the measurement mirror arm 236*. Therefore, the upper end of the measurement mirror arm 236* is polarized to the potential of the upper end of the reference arm 216.
The means for applying the reference voltage 240, 236*, 238*, 242*, 242. M further comprise the measurement mirror arm 236*, which acts as a reference mirror arm to allow the feedback to be implemented.
Moreover, the means for applying the reference voltage 240, 236″, 238*, 242*, 242, M also comprise the electrical ground M connected to the lower end of the measurement mirror arm 236* and keeping this end at the same potential as the potential of the lower end of the reference arm 216.
Therefore, since the measurement mirror arm 236* has the same resistance R as the reference arm 216, a current of the same value traverses them. Therefore, i_refis in the measurement mirror arm 236 of the first measurement cell 102 _i,2.
In the described example, the means for applying the reference voltage 240, 236*, 238*, 242*, 242, M further comprise, for each measurement cell 102 _i,3that follows the first one, an n-MOS transistor 242 with a gate connected to the output of the operational amplifier 240, a source connected to the upper end of the measurement mirror arm 236 and a drain connected to the drain of the p-MOS transistor 226. The n-MOS transistor(s) 242 are identical to the n-MOS transistor 242*. Therefore, since the same gate potential is applied and since they further have the same drain potential V_refrequired by the amplifier 246 that will be described later, the same source potential appears at the upper end of the measurement mirror arm 236. Also, since the measurement mirror arm 236 has its lower end connected to the electrical ground M, the reference voltage is applied between the ends of the measurement mirror arm 236. Finally, since the measurement mirror arm 236 has the reference resistance, it is traversed by a current i′_refequal to the reference current i_ref.
Each measurement cell 102 _i,2, 102 _i,3further comprises measurement means 246, 248, 250 connected to the high end of the measurement mirror arm 236 and designed to measure the difference between the measurement current i_meas1, i_meas2and the reference current i_reftraversing the measurement mirror arm 236.
In the described example, the measurement means 246, 248, 250 comprise an operational amplifier 246 arranged as an integrator. More specifically, the operational amplifier 246 has a positive input connected to a predetermined potential V_ref, such as VP/2, a negative input connected to each of the drains of the p-MOS 226, and the n-MOS 242* or 242, depending on the given measurement cell. The measurement means 246, 248, 250 further comprise a capacitance 248 connected to the output and the negative input of the operational amplifier 246, thereby forming a capacitive feedback loop, such that the output of the operational amplifier 246 has, during operation, a potential that is proportional to the integral of the current passing through the capacitance 248, meaning the difference between the measurement current i_meas1, i_meas2and the reference current i_ref. The measurement means 246, 248, 250 further comprise a switch 250 arranged in parallel to the capacitance 248, making it possible to reset the measurement by closing it.
Additionally, due to the properties of operational amplifiers, it will be noted that the potential of the negative input tends to be equal to the potential of the positive input, meaning V_ref. Therefore, the potential of the drain of the p-MOS transistor 226 is stabilized at the potential V_ref, and it is possible to set the potential of the source of the p-MOS transistor 226 based on the gate potential V₂, V₃.
Each measurement cell 102 _i,2, 102 _i,3further comprises a sampler 252 connected to the output of the measurement means 246 and designed to sample the provided measurement.
Samplers 252 in the same column of measurement cells are all connected to one or more column multiplexers (not shown, but symbolized by the dotted line) to continue processing and/or using sampled measurement signals.
The operation of the infrared imager in FIG. 1 will now be described.
The switch 214 is first switched off to allow for the implementation of the baselining.
The potential V_refis applied to the operational amplifiers 246, and the potential V_inis applied to the negative input of the operational amplifier 210 and thus also to the drain of the p-MOS transistor 206. During normal operation, the potential V_inis chosen equal to the potential V_ref. However, for testing phases, it may be advantageous to use a potential V_inthat is different than the potential V_ref.
The reference and measurement bolometers are switched on by applying the potentials V₁, V₂, and V₃. In an ideal circuit, the potentials V₁, V₂, and V₃should be equal. However, in practice, it may be interesting to set them individually to different values.
To read a row a measurement cells, the switches 250 for that row are switched from off to on to initialize the current measurement.
The reference current i_reftraverses the reference arm 216 and polarizes the upper end of it to the potential V_R=R×i_ref.
Due to its feedback loop, the operational amplifier 240 changes its output potential until its positive and negative inputs are at the same potential.
Since the gates of the transistors 242*, 242 for each measurement cell 102 _i,2, 102 _i,3are connected to the output of the operational amplifier 240, the potential V_R=R×i_refis applied to the upper terminal for each measurement mirror arm 236*, 236.
Since each measurement mirror arm 236*, 236 has the same resistance R as the reference arm 216, a current i_refis generated in each of them, which baselines the measurement current for the cells in the column being read, meaning that the measurement means 246, 248, 250 receive the measurement current less the reference current.
This current difference is stored up in the capacitance 248, to then be read by the sampler 252.
As explained in the introduction, the combined capacitance between the gates and the substrates of the measurement transistors 242*, 242 can become very high. It is therefore necessary to size the operational amplifier 240 accordingly.
Moreover, it was noted that the measurement of the first bolometric cell 102 _i,2could be disrupted by the fact that, at the start of its reading, a considerable amount of time passes before the operational amplifier 240 supplies the output potential that allows the positive and negative inputs to be at the same potential. During this time, a non-zero charging current is flowing towards the negative input of the operational amplifier 240, therefore disrupting the current i′_refflowing in the measurement mirror arm 236*. It may therefore be desirable to not use this arm 236* for taking measurements.
Therefore, with reference to FIG. 4, the reference cell includes the measurement mirror arm 236*, which is now a reference mirror arm for copying the reference potential.
In this embodiment, the drain of the transistor 242* is directly connected to the potential V_ref, and the current measurement elements 246, 248, 250, 252 are removed.
It is clear that an infrared imager, such as one of those described above, does not use transistors in a current mirror arrangement.
Also note that the invention is not limited to the embodiments described above. As is known to those skilled in the art, there are various modifications that can be made to the embodiments described above, with respect to the instruction that has been disclosed.
Specifically, the n-type and p-type transistors could be reversed for all of the described transistors.
Moreover, even though an infrared imager has been given as an example of implementing the invention, the invention is not limited to infrared imagers, but rather extends to imagers in other areas of frequency, such as terahertz frequencies and even more generally to any other type of measurement system that uses resistive sensors, such as NTC (Negative Temperature Coefficient) sensors or LDR (Light Dependent Resistor) sensors.
More generally, in the following claims, the terms used should not be interpreted as limiting the claims to the embodiments presented in this description, but should be interpreted to include all of the equivalents that the claims intend to cover by their formulation and whose projection is within reach of those skilled in the art by applying their general knowledge to the instruction that has just been disclosed.

Claims

1. A measurement system comprising:

a reference resistive sensor (202),

means (204, 206) for applying a voltage to the reference resistive sensor (202), such that the reference resistive sensor is traversed by a reference current (i_ref),

a reference arm (216) comprising a reference resistance (218) and connected to the reference resistive sensor (202) so as to be traversed by the reference current (i_ref),

at least one measurement resistive sensor (222),

and, for each measurement resistive sensor (222):

means (204, 226) for applying a voltage to the measurement resistive sensor (222), such that the measurement resistive sensor is traversed by a measurement current (i_meas1, i_meas2; i_meas1) that depends on the measurement taken by the measurement resistive sensor (222),

a mirror measurement arm (236*, 236; 236) comprising a resistance (238*, 238; 238) and intended to be traversed by a current (i′_ref) that is equal to the reference current (i_ref),

a measurement transistor (242*, 242; 242) with a gate and a source, said source being connected to one end of the measurement mirror arm (236*, 236; 236),

means (246, 248, 250) for measuring the difference in current between the measurement current (i_meas1, i_meas2; i_meas1) and the current (i′_ref) traversing the mirror measurement arm (236*, 236; 236),

the measurement system being characterized in that it comprises:

a reference mirror arm (236*) comprising a resistance (238*),

a reference transistor (242*) with a gate, a drain, and a source, said source being connected to one end of the reference mirror arm (236*),

an operational amplifier (240) with one positive input connected to one end of the reference arm (216), one negative input connected to the source of the reference transistor (242*), and one output connected to the gate of the reference transistor (242*),

and in that the gate of each measurement transistor (242*, 242; 242) is connected to the output of the operational amplifier (240).

2. A measurement system according to claim 1, further comprising an electrical ground (M) that connects the other ends of the reference arms (216) and the reference mirror (236*) arms.

3. A measurement system according to claim 1 or 2, further comprising, for each measurement mirror arm (236*, 236; 236), an electrical ground (M) connected to the other end of the measurement mirror arm (236*, 236; 236).

4. A measurement system according to any one of claims 1 to 3, in which:

the reference mirror arm (236*) is one of the measurement mirror arms (236*, 236), and

the reference transistor (242*) is the measurement transistor connected to the reference mirror arm (236*).

5. A measurement system according to any one of claims 1 to 3, in which:

the reference mirror arm (236*) is different from the measurement mirror arms (236), and

the reference transistor (242*) is different from the measurement transistors (242).

6. A measurement system according to any one of claims 1 to 5,

in which the means (204, 206) for applying a voltage to the reference resistive sensor (202) comprise a first transistor (206) with a source connected to a reference resistive sensor (202) terminal and a drain, and

further comprising means (210, 212) for polarizing the drain of the first transistor (206) to a set potential (V_in).

7. A measurement system according to claim 6, in which the means (210, 212) for polarizing the drain of the first transistor (206) comprise:

a second transistor (212) with a gate, a drain, and a source, said source being connected to the drain of the first transistor (206), and

an operational amplifier (21) with a positive input intended to receive the set potential (V_in), a negative input connected to the source of the second transistor (212), and an output connected to the gate of the second transistor (212).

8. A measurement system according to any one of claims 1 to 7, in which the resistance (238*, 238; 238) of the measurement mirror arm (236*, 236; 236) of each measurement resistive sensor (222) has a value equal to that of the reference resistance (218).

9. A measurement system according to any one of claims 1 to 8, in which the resistance (238*) of the reference mirror arm (236*) has a value equal to that of the reference resistance (218).

10. An imager comprising a measurement system according to any one of claims 1 to 9, in which the resistive sensors are bolometers.