US20120032285A1 - Electronic Device Including MEMS Devices And Holed Substrates, In Particular Of The LGA Or BGA Type - Google Patents
Electronic Device Including MEMS Devices And Holed Substrates, In Particular Of The LGA Or BGA Type Download PDFInfo
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- US20120032285A1 US20120032285A1 US13/275,092 US201113275092A US2012032285A1 US 20120032285 A1 US20120032285 A1 US 20120032285A1 US 201113275092 A US201113275092 A US 201113275092A US 2012032285 A1 US2012032285 A1 US 2012032285A1
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- die
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Definitions
- Embodiments of the present disclosure relate generally to an electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type.
- embodiments of the present disclosure relate particularly, but not exclusively, to an electronic device including MEMS sensors mounted on an LGA substrate, wherein the MEMS sensor needs a physical interface of communication with the outer environment of the electronic device and the following description is made with reference to this field of application for convenience of illustration only.
- a MEMS device micro-electro-mechanical system
- a MEMS device is a micro device which integrated the mechanical and electrical functions in a silicon chip or die realized by using the lithographic techniques of micro manufacturing.
- the final assembled device is typically made of the silicon die wherein the MEMS is integrated and, optionally, of integrated circuits for specific applications mounted on a substrate, for example, of the LGA or BGA type (Land Grid Array or Ball Grid Array), flanked or piled onto the MEMS device, using the conventional assembling processes.
- LGA or BGA type Land Grid Array or Ball Grid Array
- a cover or cap fixed to the substrate encapsulates the MEMS device and the other integrated circuits mounted on the substrate, forming the package for protecting it from external physical stresses.
- the cover is provided with holes for allowing the interaction between the device and outside of the assembled device.
- the substrate of the LGA/BGA type is formed by conductive layers insulated from each other by means of layers of insulating or dielectric material.
- the conductive layers are shaped in conductive tracks insulated from each other by layers of insulating or dielectric material.
- Conductive holes, called “vias”, are typically realized through the insulating layers with a vertical orientation with respect to the layers, to form conductive paths between conductive tracks belonging to different conductive layers.
- the MEMS devices are then electrically coupled to the outside of the final device, through wires which connect contact lands provided on the MEMS devices with the conductive tracks present on the substrate inside the cover.
- these types of assembled electronic devices including MEMS sensors require, between the cap/cover and the substrate, a welding ring.
- this cover/cap which completes the assembled electronic device provides a series of process steps which are not provided in the realization of integrated circuits, with a considerable cost increase.
- Embodiments of the present disclosure are directed to an electronic device including a MEMS device wherein the protective package is realized by means of molding.
- an electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid.
- the active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening.
- a protective package which incorporates at least partially the MEMS device and the substrate, leaves at least the sensitive portion of the MEMS device and the opening of the substrate exposed.
- a barrier element is positioned in an area which surrounds the sensitive portion for realizing a protection structure for the MEMS device, so that the sensitive portion is free.
- FIG. 1 is a sectional view of an electronic device including MEMS devices according to a first embodiment
- FIG. 2 is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment
- FIGS. 3 and 3 a are sectional views of an electronic device including MEMS devices according to a second embodiment
- FIG. 3 b is a plan view which shows an active surface of the MEMS devices of FIG. 3 a.
- FIG. 4 is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment
- FIG. 5 is a sectional view of an electronic device including MEMS devices according to a third embodiment
- FIG. 6 is a sectional view of a further version of an electronic device including MEMS devices according to a third embodiment
- FIG. 7 is a sectional view of an electronic device including MEMS devices according to a fourth embodiment
- FIG. 7 a is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment
- FIG. 8 is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment
- FIGS. 9 to 20 are sectional views of applications of the electronic devices including MEMS devices realized according to embodiments.
- an electronic device 1 is shown for MEMS devices according to a first embodiment which includes a substrate 2 , for example of the LGA/BGA type, having an upper surface 3 and a lower surface 4 opposed to the upper surface 3 , provided with an opening 5 passing between these surfaces 3 , 4 and including conductive tracks, at least partially interconnected with each other, formed on these surfaces 3 , 4 . Moreover, lands 4 a coupled to conductive tracks present on the lower surface 4 are present on this lower portion 4 .
- a MEMS device 6 including a die, for example of silicon, having a non active surface 7 and an active surface 8 opposed to the non active surface 7 .
- a sensitive portion 9 of MEMS device 6 is integrated.
- the MEMS device 6 is a sensor wherein the portion 9 is sensitive to chemical and/or physical variations of a fluid present outside the electronic device 1 , and the fluid interacts with the sensitive portion 9 of the MEMS device 6 , through the opening 5 .
- the active surface 8 of the MEMS device 6 faces the upper surface 3 of the substrate 2 and is spaced therefrom and the sensitive portion 9 is aligned to the opening 5 .
- peripheral portion of the active surface 8 of the MEMS device 6 is provided with connection lands for the electric connection to conductive tracks present on the upper surface 3 of the substrate 2 , by means of electric connections 10 , for example bumps.
- the MEMS device 6 is electrically mounted on the substrate 2 by means of known “flip-chip” assembly methods.
- a free central area 3 c aligned to the sensitive portion 9 a lateral area 3 a which surrounds the free central area 3 c wherein electric connections 10 are present which electrically couple the MEMS device 6 with the substrate 2
- the mean area 3 b surrounds the sensitive portion 9 of the MEMS device 6 .
- the electronic device 1 includes a protective package 11 , realized through molding, which incorporates the MEMS device 6 , the electric connections 10 and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 and the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the MEMS device 6 is enclosed in the protective package 11 .
- a barrier element 12 is positioned in an area 3 b which surrounds the sensitive portion 9 , i.e., it is realized in correspondence with the mean area 3 b.
- this barrier element 12 protects the sensitive portion 9 during the manufacturing step of the protective package 11 , through molding, so that this sensitive portion 9 remains free.
- the formation of the protective package 11 provides the introduction, inside a cavity of a mold, of the substrate 2 whereon the MEMS device 6 is mounted.
- an electrically insulating material at the melted state, which will be the plastic body of the protective package 11 .
- This material is typically a synthetic resin, for example, epoxy resin.
- the proper molding step involves the injection of the resin in the cavity of the mold. This step is then followed by a cooling step for completing the protective package 11 .
- the barrier element 12 is provided which completely surrounds at least the sensitive portion 9 of the MEMS device 6 .
- the barrier element 12 is a ring which completely surrounds the sensitive portion 9 of the MEMS device 6 , when the MEMS device 6 is mounted on the substrate 2 , and contacts the upper surface 3 of the substrate 2 and the active surface 8 .
- the barrier element 12 is formed by welding paste, therefore, in this embodiment, the electric connection step and the gluing step of the MEMS device 6 to the substrate 2 are carried out at the same time, resulting in a particularly compact structure of simple realization, not needing critical alignments between different structures.
- this barrier element 12 is completely coated by the protective package 11 .
- FIG. 2 Another embodiment of the device of FIG. 1 is shown with reference to FIG. 2 .
- a protective package 11 a realized through molding, incorporates the MEMS device 6 , the electric connections 10 and the substrate 2 , leave the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- an electronic device 1 b according to a second embodiment is shown.
- the electronic device 1 b includes a substrate 2 , for example of the LGA/BGA type, having an upper surface 3 and a lower surface 4 opposed to the upper surface 3 , provided with an opening 5 .
- a MEMS device 6 includes a die, for example of silicon, having a non active surface 7 and an active surface 8 opposed to the non active surface 7 , wherein a sensitive portion 9 of a MEMS sensor is integrated.
- the active surface 8 of the MEMS device 6 faces the upper surface 3 of the substrate 2 and is spaced therefrom and the sensitive portion 9 is aligned to the opening 5 .
- peripheral portion of the active surface 8 of the MEMS device 6 is provided with connection lands for the electric connection to conductive tracks present on the upper surface 3 of the substrate 2 , by means of electric connections 10 , for example bumps.
- the MEMS device 6 is electrically mounted on the substrate 2 by means of the known “flip-chip” assembly methods.
- a free central area 3 c aligned to the sensitive portion 9
- a lateral area 3 a which surrounds the free central area 3 c wherein electric connections 10 are present which electrically couple the MEMS device 6 with the substrate 2
- a mean area 3 b included between the lateral area 3 a and the free central area 3 c.
- the electronic device 1 includes a protective package 11 b , realized through molding, which incorporates the MEMS device 6 , the electric connections 10 and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 and the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the MEMS device 6 is enclosed in the protective package 11 b.
- a barrier element 12 a , 12 b is positioned at least in an area 3 b which surrounds the sensitive portion 9 , i.e., it is realized at least in correspondence with the mean area 3 b.
- the barrier element 12 a is an irregular area 12 a formed on the upper surface 3 of the substrate 2 or the barrier element 12 b is an irregular area 12 b formed on the active surface 8 of the MEMS device 6 .
- this irregular area 12 a , 12 b shows a wrinkled surface.
- this irregular area 12 a extends on the upper surface 3 of the substrate 2 in correspondence with all the circuit free area 3 c.
- this irregular area 12 a is obtained by modifying the chemical properties of the upper surface 3 of the substrate 2 , as shown in FIG. 3 .
- the irregular area 12 a is formed by non wettable material.
- This layer 12 a of wettable material may be formed on the upper surface 3 of the substrate 2 .
- the barrier element 12 b is formed by an irregular area 12 b which is obtained by modifying the chemical properties of the active surface 8 of the MEMS device 6 .
- this irregular area 12 b extends on the active surface 8 of the MEMS device 6 in correspondence with the whole sensitive portion 9 of the MEMS device 6 .
- a protection layer 6 a including wettable material for example a plastic layer, for example including organic material such as Polyimide.
- the layer element of wettable material 6 a is removed leaving a dielectric layer 12 b of the non wettable type exposed, for example silicon oxide, which covers the sensitive portion 9 of the MEMS device 6 .
- the MEMS device 6 is welded on the substrate 2 and is subjected to a cleaning operation, for example in Plasma, by using a gas argon and oxygen mixture.
- the oxygen of the cleaning mixture chemically reacts with the layer 6 a of wettable material increasing its wettability, while the dielectric layer 12 b which covers the sensitive portion 9 is inert to the treatment.
- This difference of wettability implies a sudden slow down of the resin flow during the molding step of the protective package 11 b thereby the surface tension of the resin leads to the formation of a meniscus around the peripheral surface of the dielectric layer 12 b which covers the sensitive portion 9 .
- the peripheral surface of the dielectric layer 12 b is of circular shape.
- the barrier layer 12 b of non wettable material may be formed only on the active surface 8 of the upper MEMS device 3 of the substrate 2 of the sensitive portion 9 .
- the irregular area 12 a , 12 b shows some wrinkles.
- trenches are formed in the substrate or in the MEMS device 6 , so as to realize a preferred path defined in the substrate or on the MEMS device 6 for the resin during the molding step.
- these trenches completely surround the sensitive portion 9 of the MEMS device 6 .
- a layer of non wettable material can be present in correspondence with the sensitive portion 9 of the MEMS device 6 in the area surrounded by the trenches.
- this irregular area 12 a , 12 b protects the sensitive portion 9 during the manufacturing step of the protective package 11 a , through molding, having the liquid resin uniformly distributed around the electric connections without reaching the sensitive portion 9 .
- FIG. 4 An embodiment of the device of FIG. 3 is shown with reference to FIG. 4 .
- a protective package 11 c realized through molding, incorporates the MEMS device 6 , the electric connections 10 and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- an electronic device 1 d according to a third embodiment is shown.
- an underfiller 13 is present in the lateral area 3 a so as to incorporate the electric connections 10 for mechanically strengthening the electronic device 1 in the connection area between the MEMS device 6 and the substrate 2 .
- the underfiller 13 is epoxy resin.
- the underfiller 13 shows a profile tapered outwards with respect of the lateral area 3 a on the opposite side with respect to the mean area 3 b , while it shows a substantially vertical profile in correspondence with the mean area 3 b.
- the cross section of the underfiller 13 increases when approaching the upper surface 3 of the substrate 2 .
- the electronic device 1 d also includes a protective package 11 d , realized through molding, which incorporates the MEMS device 6 , the underfiller 13 and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 and the lower surface 4 and the opening 5 of the substrate 2 exposed.
- barrier material 12 allows maintaining the sensitive portion 9 of the MEMS device 6 , i.e., the central free area 3 c , free from the underfiller 13 .
- the underfiller 13 protects the active surface 8 of the MEMS device 6 during the manufacturing step of the plastic package 11 d.
- FIG. 5 An embodiment of the device of FIG. 5 is shown with reference to FIG. 6 .
- a protective package 11 e realized through molding, incorporates the MEMS device 6 , the underfiller 13 and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- an electronic device 1 f according to a fourth embodiment is shown.
- an underfiller 13 is present in the lateral area 3 a so as to incorporate the electric connections 10 to mechanically strengthen the electronic device 1 in the connection area between the MEMS device 6 and the substrate 2 .
- the underfiller 13 shows a tapered profile outside the lateral area 3 a on the opposite side with respect to the mean area 3 b , while it shows a substantially vertical profile in correspondence with the mean area 3 b.
- the cross section of the underfiller 13 increases when approaching the upper surface 3 of the substrate 2 .
- the electronic device 1 f also includes a protective package 11 f realized through molding, which incorporates the MEMS device 6 , the underfiller 13 and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 and the lower surface 4 and the opening 5 of the substrate 2 exposed.
- barrier element 12 a allows maintaining the sensitive portion 9 of the MEMS device 6 free from the underfiller 13 .
- FIG. 7 a A further embodiment of the device of FIG. 7 is shown with reference to FIG. 7 a.
- the barrier element 12 b is formed on the active surface 8 of the MEMS device 6 around the sensitive portion 9 , prior to the formation of the underfiller 13 , with the same modes with which the barrier element 12 b of FIG. 3 a is realized.
- the difference of wettability between the barrier element 12 b and the portion outside the barrier layer implies a sudden slow down of the flow of the underfiller 13 during its dispensing step after the MEMS device 6 has been fixed to the substrate, thereby the surface tension of the underfiller 13 leads to the formation of a meniscus around the peripheral surface of the barrier element 12 b which at least surrounds the sensitive portion 9 .
- FIG. 7 An embodiment of the device of FIG. 7 is shown with reference to FIG. 8 .
- a protective package 11 g realized through molding, incorporates the MEMS device 6 , the underfiller 13 and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- an underfiller 13 is present in the lateral area 3 a so as to incorporate the electric connections 10 to mechanically strengthen the electronic device 1 in the connection area between the MEMS device 6 and the substrate 2 .
- FIGS. 9 and 10 two further versions of an electronic device 1 h according to the first embodiment are shown.
- the electronic device 1 h includes an integrated circuit 14 having a first surface 14 a and a second surface 14 b opposed to the first surface, the integrated circuit 14 being mounted with the first surface 14 a on the non active surface 7 of the MEMS device 6 .
- the integrated circuit 14 is thus electrically coupled to the conductive tracks present on the upper surface 3 of the substrate 2 by means of further electric connections 15 .
- the dimension of the cross section of this integrated circuit 14 is greater than the dimension of the cross section of the MEMS device 6 .
- a passivated circuitry is integrated and moreover the first surface 14 a is provided with connection lands for the electric connection to the MEMS device 6 , by means of bumps.
- a passivated circuitry is integrated and moreover connection lands are provided for the electric connection to the MEMS device 6 through wire-bonding.
- a protective package 11 h realized through molding, incorporates the MEMS device 6 , the integrated circuit 14 , the connections 15 and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- FIGS. 11 and 12 two further versions are shown of an electronic device 1 g according to the third embodiment.
- the electronic device 1 g includes an integrated circuit 14 having a first surface 14 a and a second surface 14 b opposed to the first surface, which is mounted with the first surface 14 a on the non active surface 7 of the MEMS device 6 .
- the integrated device 14 is then electrically coupled to the conductive tracks formed on the upper surface 3 of the substrate 2 by means of further electric connections 15 .
- the dimension of the cross section of this integrated circuit 14 is greater than the dimension of the cross section of the MEMS device 6 .
- the underfiller 13 is also present in an area 14 c included between a portion of the first surface 14 a projecting with respect to the MEMS device and the upper surface 3 of the substrate 2 .
- the underfiller 13 shows a tapered profile outside the area 14 c.
- the cross section of the underfiller 13 increases when approaching the upper surface 3 of the substrate 2 .
- the first surface 14 a is provided with connection lands for the electric connection to the MEMS device 6 , by means of bump (flip-chip) bonding.
- connection lands for the electric connection to the MEMS device 6 , by means of connection wires (wirebonding).
- a protective package 11 g realized through molding, incorporates the MEMS device 6 , the integrated circuit 14 , the connections 15 , the underfiller 13 and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- underfiller 13 allows the protection of both the integrated circuit 14 and the MEMS device 6 during the molding step of the protective package 11 g.
- the electronic device 1 i is shown which is a further version of the electronic device of FIG. 9 , wherein the protective package 11 i leaves the second surface 14 b of the integrated circuit 14 exposed.
- the electronic device 1 l is shown which is a further embodiment of the electronic device of FIG. 11 , wherein the protective package 11 l leaves the second surface 14 b of the integrated circuit 14 exposed.
- the device 1 of FIG. 1 is shown wherein an integrated circuit 16 is mounted on the substrate 2 flanked by the MEMS device 6 , and fixed to the substrate 2 , for example by means of a welding layer 16 b.
- the integrated circuit 16 is electrically coupled to the substrate 2 by means of further electric connections 16 a.
- the protective package 11 realized through molding, incorporates the MEMS device 6 with the electric connections 10 , the integrated circuit 16 with the electric connections 16 a and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the device 1 d of FIG. 5 is shown wherein an integrated circuit 16 is mounted on the substrate 2 flanked to the MEMS device 6 , and fixed to the substrate 2 , for example by means of a welding layer 16 b.
- the integrated circuit 16 is electrically coupled to the substrate 2 by means of further electric connections 16 a.
- the protective package 11 d realized through molding, incorporates the MEMS device 6 , the underfiller 13 , the integrated circuit 16 with the further electric connections 16 a and the substrate 2 , leaving sensitive portion 9 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the device 1 a of FIG. 2 is shown wherein an integrated circuit 16 is mounted on the substrate 2 flanked to the device MEMS 6 , and fixed to the substrate 2 , for example by means of a welding layer 16 b.
- the integrated circuit 16 is electrically coupled to the substrate 2 by means of further electric connections 16 a.
- the protective package 11 a realized through molding, incorporates the MEMS device 6 with the electric connections 10 , the integrated circuit 16 with the further electric connections 16 a and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the device 1 e of FIG. 6 is shown wherein an integrated circuit 16 is mounted on the substrate 2 flanked to the MEMS device 6 , and fixed to the substrate 2 , for example by means of a welding layer 16 b.
- the integrated circuit 16 is electrically coupled to the substrate 2 by means of further electric connections 16 a.
- the protective package 11 e realized through molding, incorporates the MEMS device 6 , the underfiller 13 , the integrated circuit 16 with the further electric connections 16 a and the substrate 2 , leaving the sensitive portion 9 and the non active surface 7 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the device 1 h of FIG. 9 is shown wherein a second integrated circuit 16 is mounted on the substrate 2 flanked to the MEMS device 6 , and fixed to the substrate 2 , for example by means of a welding layer 16 b.
- the second integrated circuit 16 is electrically coupled to the substrate 2 by means of further electric connections 16 a.
- a third integrated circuit 17 is mounted on the second surface 14 b of the integrated circuit 14 , and electrically coupled to the substrate 2 by means of further electric connections 17 a.
- a fourth integrated circuit 18 is mounted on the second integrated circuit 16 and electrically coupled to the substrate 2 by means of further electric connections 18 a.
- the protective package 11 h realized through molding, incorporates the MEMS device 6 , the electric connections 10 , the integrated circuits 14 , 16 , 17 and 18 with the relative electric connections 15 , 16 a , 17 a and 18 a and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the device 1 g of FIG. 11 is shown wherein a second integrated circuit 16 is mounted on the substrate 2 flanked to the MEMS device 6 , and fixed to the substrate 2 , for example by means of a welding layer 16 b.
- the second integrated circuit 16 is electrically coupled to the substrate 2 by means of further electric connections 16 a.
- a third integrated circuit 17 is mounted on the second surface 14 b of the integrated circuit 14 , and electrically coupled to the substrate 2 by means of further electric connections 17 a.
- a fourth integrated circuit 18 is mounted on the second integrated circuit 16 and electrically coupled to the substrate 2 by means of further electric connections 18 a.
- the protective package 11 g realized through molding, incorporates the MEMS device 6 , the underfiller 13 , the integrated circuits 14 , 16 , 17 and 18 with the relative electric connections 15 , 16 a , 17 a and 18 a and the substrate 2 , leaving the sensitive portion 9 of the MEMS device 6 , as well as the lower surface 4 and the opening 5 of the substrate 2 exposed.
- the integrated circuits 14 , 16 , 17 and 18 can be sensor devices, for example accelerometers 14 , gyroscopes 18 , magnetometers 17 to form an IMU (inertial measurement unit).
- IMU inertial measurement unit
- microphones pressure, gas, chemical sensors
- a protective package realized by means of molding.
- These devices can, in turn, be contained in a variety of different types of electronic systems, such as barometric systems, audio systems, computer systems, control systems, safety systems, and so on.
- the electronic device as a whole shows an overall dimension included between 3 ⁇ 3 ⁇ 1 mm ⁇ 3, while the MEMS device 6 has a width of 1500 ⁇ m a length of 1500 ⁇ m and a thickness of 700 ⁇ m.
- the sensitive portion 9 of the MEMS device 6 has a diameter included between 100 ⁇ m and 1000 ⁇ m.
- the distance between the active surface 8 of the MEMS device 6 and the upper surface 3 of the substrate is included between 50 and 500 ⁇ m, while the thickness of the substrate is included between about 150 and 300 ⁇ m and the width of the opening 5 is included between 100 and 700 ⁇ m.
- barrier element 12 is realized with a ring of welding paste it has a thickness of a cross section included between 60 and 300 ⁇ m.
- the barrier element 12 a , 12 b is realized with an irregular area it has a width of a cross section of about 10-50 ⁇ m and, for example, a depth included between 20-80 ⁇ m.
- electronic devices according to embodiments are particularly compact and use technical solutions which do not provide critical alignments.
- the presence of the barrier element 12 , 12 a allows protecting the sensitive portion 9 of the MEMS device 6 during the manufacturing steps of the protective package 11 or during the dispensing step of the underfiller 13 in the electronic device 1 .
- this barrier element 12 , 12 a , 12 b can be of physical or chemical nature or a combination of the two.
- barrier elements 12 , 12 a , 12 b can be realized both on the substrate 2 and on the MEMS device 6 .
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Abstract
An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package incorporates at least partially the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device, and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion to realize a protection structure for the MEMS device, so that the sensitive portion is free.
Description
- The present application is a continuation of U.S. patent application Ser. No. 12/969,022, filed Dec. 14, 2010, which is a divisional application of 12/006,819 filed Jan. 4, 2008, which application claims priority from Italian patent application No. MI2007A 000008, filed Jan. 4, 2007, and Italian patent application No. MI2007A 000007, filed Jan. 4, 2007; all the foregoing applications are incorporated herein by reference in their entireties.
- Embodiments of the present disclosure relate generally to an electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type.
- More specifically, embodiments of the present disclosure relate particularly, but not exclusively, to an electronic device including MEMS sensors mounted on an LGA substrate, wherein the MEMS sensor needs a physical interface of communication with the outer environment of the electronic device and the following description is made with reference to this field of application for convenience of illustration only.
- As it is well known, a MEMS device (micro-electro-mechanical system) is a micro device which integrated the mechanical and electrical functions in a silicon chip or die realized by using the lithographic techniques of micro manufacturing. The final assembled device is typically made of the silicon die wherein the MEMS is integrated and, optionally, of integrated circuits for specific applications mounted on a substrate, for example, of the LGA or BGA type (Land Grid Array or Ball Grid Array), flanked or piled onto the MEMS device, using the conventional assembling processes.
- A cover or cap fixed to the substrate, encapsulates the MEMS device and the other integrated circuits mounted on the substrate, forming the package for protecting it from external physical stresses.
- If the MEMS device is a pressure, gas or liquid sensor or a microphone, the cover is provided with holes for allowing the interaction between the device and outside of the assembled device.
- It is also known that the substrate of the LGA/BGA type is formed by conductive layers insulated from each other by means of layers of insulating or dielectric material. The conductive layers are shaped in conductive tracks insulated from each other by layers of insulating or dielectric material. Conductive holes, called “vias”, are typically realized through the insulating layers with a vertical orientation with respect to the layers, to form conductive paths between conductive tracks belonging to different conductive layers.
- The MEMS devices are then electrically coupled to the outside of the final device, through wires which connect contact lands provided on the MEMS devices with the conductive tracks present on the substrate inside the cover.
- Although advantageous under several aspects, these types of assembled electronic devices including MEMS sensors require, between the cap/cover and the substrate, a welding ring.
- Moreover, the formation of this cover/cap which completes the assembled electronic device provides a series of process steps which are not provided in the realization of integrated circuits, with a considerable cost increase.
- There is a need for electronic devices including MEMS devices and having such structural characteristics as to allow this electronic device to be made with manufacturing processes of conventional integrated circuits, overcoming the limits and/or the drawbacks still limiting the electronic devices realized according to the prior art.
- Embodiments of the present disclosure are directed to an electronic device including a MEMS device wherein the protective package is realized by means of molding.
- According to one embodiment, an electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package, which incorporates at least partially the MEMS device and the substrate, leaves at least the sensitive portion of the MEMS device and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion for realizing a protection structure for the MEMS device, so that the sensitive portion is free.
- The characteristics and the advantages of electronic devices and methods of forming such devices according to the present disclosure will be apparent from the following description of embodiments thereof given by way of indicative and non limiting example with reference to the annexed drawings.
- In these figures:
-
FIG. 1 is a sectional view of an electronic device including MEMS devices according to a first embodiment, -
FIG. 2 is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment, -
FIGS. 3 and 3 a are sectional views of an electronic device including MEMS devices according to a second embodiment, -
FIG. 3 b is a plan view which shows an active surface of the MEMS devices ofFIG. 3 a. -
FIG. 4 is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment, -
FIG. 5 is a sectional view of an electronic device including MEMS devices according to a third embodiment, -
FIG. 6 is a sectional view of a further version of an electronic device including MEMS devices according to a third embodiment, -
FIG. 7 is a sectional view of an electronic device including MEMS devices according to a fourth embodiment, -
FIG. 7 a is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment, -
FIG. 8 is a sectional view of a further version of an electronic device including MEMS devices according to another embodiment, -
FIGS. 9 to 20 are sectional views of applications of the electronic devices including MEMS devices realized according to embodiments. - The following discussion is presented to enable a person skilled in the art to make and use the subject matter disclosed herein. Various modifications to the embodiments will be readily apparent to those skilled in the art, and the generic principles herein may be applied to other embodiments and applications without departing from the spirit and scope of the present subject matter. Thus, the present disclosure is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
- With reference to
FIG. 1 , anelectronic device 1 is shown for MEMS devices according to a first embodiment which includes asubstrate 2, for example of the LGA/BGA type, having anupper surface 3 and alower surface 4 opposed to theupper surface 3, provided with an opening 5 passing between thesesurfaces surfaces lands 4 a coupled to conductive tracks present on thelower surface 4 are present on thislower portion 4. AMEMS device 6 including a die, for example of silicon, having a nonactive surface 7 and anactive surface 8 opposed to the nonactive surface 7. Advantageously, in the silicon die, in correspondence with theactive surface 8, asensitive portion 9 ofMEMS device 6 is integrated. In particular, theMEMS device 6 is a sensor wherein theportion 9 is sensitive to chemical and/or physical variations of a fluid present outside theelectronic device 1, and the fluid interacts with thesensitive portion 9 of theMEMS device 6, through theopening 5. - According to this embodiment the
active surface 8 of theMEMS device 6 faces theupper surface 3 of thesubstrate 2 and is spaced therefrom and thesensitive portion 9 is aligned to theopening 5. - Moreover, the peripheral portion of the
active surface 8 of theMEMS device 6 is provided with connection lands for the electric connection to conductive tracks present on theupper surface 3 of thesubstrate 2, by means ofelectric connections 10, for example bumps. - Advantageously, the
MEMS device 6 is electrically mounted on thesubstrate 2 by means of known “flip-chip” assembly methods. - In particular, between the
active surface 8 of theMEMS device 6 and theupper surface 3 of thesubstrate 2 different functional areas remain defined: a freecentral area 3 c aligned to thesensitive portion 9, alateral area 3 a which surrounds the freecentral area 3 c whereinelectric connections 10 are present which electrically couple theMEMS device 6 with thesubstrate 2, and amean area 3 b included between thelateral area 3 a and the freecentral area 3 c. In particular also themean area 3 b surrounds thesensitive portion 9 of theMEMS device 6. - Also according to embodiments, the
electronic device 1 includes aprotective package 11, realized through molding, which incorporates theMEMS device 6, theelectric connections 10 and thesubstrate 2, leaving thesensitive portion 9 of theMEMS device 6 and thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - In other words, the
MEMS device 6 is enclosed in theprotective package 11. - According to embodiments, a
barrier element 12 is positioned in anarea 3 b which surrounds thesensitive portion 9, i.e., it is realized in correspondence with themean area 3 b. - Advantageously according to embodiments, the presence of this
barrier element 12 protects thesensitive portion 9 during the manufacturing step of theprotective package 11, through molding, so that thissensitive portion 9 remains free. - In particular, in a known way, the formation of the
protective package 11 provides the introduction, inside a cavity of a mold, of thesubstrate 2 whereon theMEMS device 6 is mounted. - In the mold cavity the injection under pressure and at high temperature is then provided of an electrically insulating material at the melted state, which will be the plastic body of the
protective package 11. This material is typically a synthetic resin, for example, epoxy resin. - The proper molding step involves the injection of the resin in the cavity of the mold. This step is then followed by a cooling step for completing the
protective package 11. - For avoiding damage by the resin of the
sensitive portion 9 of theMEMS device 6 during the resin injection step, according to embodiments, between theupper surface 3 of thesubstrate 2 and theactive surface 8, thebarrier element 12 is provided which completely surrounds at least thesensitive portion 9 of theMEMS device 6. - Advantageously, the
barrier element 12 is a ring which completely surrounds thesensitive portion 9 of theMEMS device 6, when theMEMS device 6 is mounted on thesubstrate 2, and contacts theupper surface 3 of thesubstrate 2 and theactive surface 8. - Advantageously, the
barrier element 12 is formed by welding paste, therefore, in this embodiment, the electric connection step and the gluing step of theMEMS device 6 to thesubstrate 2 are carried out at the same time, resulting in a particularly compact structure of simple realization, not needing critical alignments between different structures. - In this first embodiment the outer edge of this
barrier element 12 is completely coated by theprotective package 11. - Another embodiment of the device of
FIG. 1 is shown with reference toFIG. 2 . - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 1 will be given the same reference numbers. - In particular, in this electronic device 1 a, a
protective package 11 a, realized through molding, incorporates theMEMS device 6, theelectric connections 10 and thesubstrate 2, leave thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIGS. 3 , 3 a and 3 b, anelectronic device 1 b according to a second embodiment is shown. - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 1 will be given the same reference numbers. - In particular, the
electronic device 1 b includes asubstrate 2, for example of the LGA/BGA type, having anupper surface 3 and alower surface 4 opposed to theupper surface 3, provided with anopening 5. AMEMS device 6 includes a die, for example of silicon, having a nonactive surface 7 and anactive surface 8 opposed to the nonactive surface 7, wherein asensitive portion 9 of a MEMS sensor is integrated. - According to this embodiment the
active surface 8 of theMEMS device 6 faces theupper surface 3 of thesubstrate 2 and is spaced therefrom and thesensitive portion 9 is aligned to theopening 5. - Moreover, the peripheral portion of the
active surface 8 of theMEMS device 6 is provided with connection lands for the electric connection to conductive tracks present on theupper surface 3 of thesubstrate 2, by means ofelectric connections 10, for example bumps. - Advantageously, the
MEMS device 6 is electrically mounted on thesubstrate 2 by means of the known “flip-chip” assembly methods. - Therefore, between the
active surface 8 of theMEMS device 6 and theupper surface 3 of thesubstrate 2 three areas are identified: a freecentral area 3 c aligned to thesensitive portion 9, alateral area 3 a which surrounds the freecentral area 3 c whereinelectric connections 10 are present which electrically couple theMEMS device 6 with thesubstrate 2, and amean area 3 b included between thelateral area 3 a and the freecentral area 3 c. - Also according to this embodiment, the
electronic device 1 includes aprotective package 11 b, realized through molding, which incorporates theMEMS device 6, theelectric connections 10 and thesubstrate 2, leaving thesensitive portion 9 of theMEMS device 6 and thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - In other words, the
MEMS device 6 is enclosed in theprotective package 11 b. - According to this embodiment, a
barrier element area 3 b which surrounds thesensitive portion 9, i.e., it is realized at least in correspondence with themean area 3 b. - In this second embodiment, the
barrier element 12 a is anirregular area 12 a formed on theupper surface 3 of thesubstrate 2 or thebarrier element 12 b is anirregular area 12 b formed on theactive surface 8 of theMEMS device 6. - Advantageously, this
irregular area - Advantageously, this
irregular area 12 a extends on theupper surface 3 of thesubstrate 2 in correspondence with all the circuitfree area 3 c. - Advantageously, according to this embodiment this
irregular area 12 a is obtained by modifying the chemical properties of theupper surface 3 of thesubstrate 2, as shown inFIG. 3 . - Advantageously, the
irregular area 12 a is formed by non wettable material. - This
layer 12 a of wettable material may be formed on theupper surface 3 of thesubstrate 2. - As shown in
FIGS. 3 a and 3 b, advantageously according to this embodiment thebarrier element 12 b is formed by anirregular area 12 b which is obtained by modifying the chemical properties of theactive surface 8 of theMEMS device 6. - Advantageously, this
irregular area 12 b extends on theactive surface 8 of theMEMS device 6 in correspondence with the wholesensitive portion 9 of theMEMS device 6. - It is in fact known that the
active surface 8 of theMEMS device 6 is covered by aprotection layer 6 a including wettable material, for example a plastic layer, for example including organic material such as Polyimide. - According to this embodiment, from the
sensitive portion 9 of theMEMS device 6 the layer element ofwettable material 6 a is removed leaving adielectric layer 12 b of the non wettable type exposed, for example silicon oxide, which covers thesensitive portion 9 of theMEMS device 6. - Advantageously, after the removal step from the
sensitive portion 9 of theMEMS device 6 of thelayer 6 a of wettable material, theMEMS device 6 is welded on thesubstrate 2 and is subjected to a cleaning operation, for example in Plasma, by using a gas argon and oxygen mixture. - Advantageously, the oxygen of the cleaning mixture chemically reacts with the
layer 6 a of wettable material increasing its wettability, while thedielectric layer 12 b which covers thesensitive portion 9 is inert to the treatment. - Therefore, as a result after the treatment an increased wettability of the
layer 6 a of wettable material is obtained, comparable to that of theupper surface 3 of thesubstrate 2 and a reduced wettability of the surface of thedielectric layer 12 b which covers thesensitive portion 9. - This difference of wettability implies a sudden slow down of the resin flow during the molding step of the
protective package 11 b thereby the surface tension of the resin leads to the formation of a meniscus around the peripheral surface of thedielectric layer 12 b which covers thesensitive portion 9. - Advantageously, as shown in
FIG. 3 b, the peripheral surface of thedielectric layer 12 b is of circular shape. - The
barrier layer 12 b of non wettable material may be formed only on theactive surface 8 of theupper MEMS device 3 of thesubstrate 2 of thesensitive portion 9. - In a further version of this second embodiment the
irregular area - Advantageously, in the
irregular area MEMS device 6, so as to realize a preferred path defined in the substrate or on theMEMS device 6 for the resin during the molding step. - Advantageously, these trenches completely surround the
sensitive portion 9 of theMEMS device 6. - Advantageously, in this latter embodiment a layer of non wettable material can be present in correspondence with the
sensitive portion 9 of theMEMS device 6 in the area surrounded by the trenches. - According to this embodiment, the presence of this
irregular area sensitive portion 9 during the manufacturing step of theprotective package 11 a, through molding, having the liquid resin uniformly distributed around the electric connections without reaching thesensitive portion 9. - An embodiment of the device of
FIG. 3 is shown with reference toFIG. 4 . - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 3 will be given the same reference numbers. - In particular, in this electronic device 1 c, a
protective package 11 c, realized through molding, incorporates theMEMS device 6, theelectric connections 10 and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 5 , anelectronic device 1 d according to a third embodiment is shown. - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 1 will be given the same reference numbers. - In particular, in this embodiment an
underfiller 13 is present in thelateral area 3 a so as to incorporate theelectric connections 10 for mechanically strengthening theelectronic device 1 in the connection area between theMEMS device 6 and thesubstrate 2. - Advantageously, the
underfiller 13 is epoxy resin. - Advantageously, the
underfiller 13 shows a profile tapered outwards with respect of thelateral area 3 a on the opposite side with respect to themean area 3 b, while it shows a substantially vertical profile in correspondence with themean area 3 b. - In other words, the cross section of the
underfiller 13 increases when approaching theupper surface 3 of thesubstrate 2. - The
electronic device 1 d also includes aprotective package 11 d, realized through molding, which incorporates theMEMS device 6, theunderfiller 13 and thesubstrate 2, leaving thesensitive portion 9 of theMEMS device 6 and thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - The presence of the
barrier material 12 allows maintaining thesensitive portion 9 of theMEMS device 6, i.e., the centralfree area 3 c, free from theunderfiller 13. - Moreover, the
underfiller 13 protects theactive surface 8 of theMEMS device 6 during the manufacturing step of theplastic package 11 d. - An embodiment of the device of
FIG. 5 is shown with reference toFIG. 6 . - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 5 will be given the same reference numbers. - In particular, in this electronic device 1 e, a
protective package 11 e, realized through molding, incorporates theMEMS device 6, theunderfiller 13 and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 7 , an electronic device 1 f according to a fourth embodiment is shown. - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 3 will be given the same reference numbers. - In particular, in this embodiment an
underfiller 13 is present in thelateral area 3 a so as to incorporate theelectric connections 10 to mechanically strengthen theelectronic device 1 in the connection area between theMEMS device 6 and thesubstrate 2. - Advantageously, the
underfiller 13 shows a tapered profile outside thelateral area 3 a on the opposite side with respect to themean area 3 b, while it shows a substantially vertical profile in correspondence with themean area 3 b. - In other words, the cross section of the
underfiller 13 increases when approaching theupper surface 3 of thesubstrate 2. - The electronic device 1 f also includes a
protective package 11 f realized through molding, which incorporates theMEMS device 6, theunderfiller 13 and thesubstrate 2, leaving thesensitive portion 9 of theMEMS device 6 and thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - The presence of the
barrier element 12 a allows maintaining thesensitive portion 9 of theMEMS device 6 free from theunderfiller 13. - A further embodiment of the device of
FIG. 7 is shown with reference toFIG. 7 a. - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 7 will be given the same reference numbers. - In this embodiment the
barrier element 12 b is formed on theactive surface 8 of theMEMS device 6 around thesensitive portion 9, prior to the formation of theunderfiller 13, with the same modes with which thebarrier element 12 b ofFIG. 3 a is realized. - In particular, the difference of wettability between the
barrier element 12 b and the portion outside the barrier layer implies a sudden slow down of the flow of theunderfiller 13 during its dispensing step after theMEMS device 6 has been fixed to the substrate, thereby the surface tension of theunderfiller 13 leads to the formation of a meniscus around the peripheral surface of thebarrier element 12 b which at least surrounds thesensitive portion 9. - An embodiment of the device of
FIG. 7 is shown with reference toFIG. 8 . - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 7 will be given the same reference numbers. - In particular, in this
electronic device 1 g, aprotective package 11 g, realized through molding, incorporates theMEMS device 6, theunderfiller 13 and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - In particular, in this embodiment an
underfiller 13 is present in thelateral area 3 a so as to incorporate theelectric connections 10 to mechanically strengthen theelectronic device 1 in the connection area between theMEMS device 6 and thesubstrate 2. - With reference to
FIGS. 9 and 10 , two further versions of anelectronic device 1 h according to the first embodiment are shown. - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 1 will be given the same reference numbers. - In particular, the
electronic device 1 h includes anintegrated circuit 14 having afirst surface 14 a and asecond surface 14 b opposed to the first surface, theintegrated circuit 14 being mounted with thefirst surface 14 a on the nonactive surface 7 of theMEMS device 6. - The
integrated circuit 14 is thus electrically coupled to the conductive tracks present on theupper surface 3 of thesubstrate 2 by means of furtherelectric connections 15. - For example, the dimension of the cross section of this
integrated circuit 14 is greater than the dimension of the cross section of theMEMS device 6. - Advantageously, as shown in
FIG. 9 , on thefirst surface 14 a a passivated circuitry is integrated and moreover thefirst surface 14 a is provided with connection lands for the electric connection to theMEMS device 6, by means of bumps. - Advantageously, as shown in
FIG. 10 , on thesecond surface 14 b a passivated circuitry is integrated and moreover connection lands are provided for the electric connection to theMEMS device 6 through wire-bonding. - A
protective package 11 h, realized through molding, incorporates theMEMS device 6, theintegrated circuit 14, theconnections 15 and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIGS. 11 and 12 , two further versions are shown of anelectronic device 1 g according to the third embodiment. - Elements being structurally and functionally identical with respect to the device described with reference to
FIG. 5 will be given the same reference numbers. - In particular, the
electronic device 1 g includes anintegrated circuit 14 having afirst surface 14 a and asecond surface 14 b opposed to the first surface, which is mounted with thefirst surface 14 a on the nonactive surface 7 of theMEMS device 6. - The
integrated device 14 is then electrically coupled to the conductive tracks formed on theupper surface 3 of thesubstrate 2 by means of furtherelectric connections 15. - Advantageously, the dimension of the cross section of this
integrated circuit 14 is greater than the dimension of the cross section of theMEMS device 6. - Advantageously, the
underfiller 13 is also present in anarea 14 c included between a portion of thefirst surface 14 a projecting with respect to the MEMS device and theupper surface 3 of thesubstrate 2. - Advantageously, the
underfiller 13 shows a tapered profile outside thearea 14 c. - In other words the cross section of the
underfiller 13 increases when approaching theupper surface 3 of thesubstrate 2. - Advantageously, as shown in
FIG. 11 , thefirst surface 14 a is provided with connection lands for the electric connection to theMEMS device 6, by means of bump (flip-chip) bonding. - Advantageously, as shown in
FIG. 12 , thesecond surface 14 b is provided with connection lands for the electric connection to theMEMS device 6, by means of connection wires (wirebonding). - A
protective package 11 g, realized through molding, incorporates theMEMS device 6, theintegrated circuit 14, theconnections 15, theunderfiller 13 and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - The presence of the
underfiller 13 allows the protection of both theintegrated circuit 14 and theMEMS device 6 during the molding step of theprotective package 11 g. - With reference to
FIG. 13 the electronic device 1 i is shown which is a further version of the electronic device ofFIG. 9 , wherein theprotective package 11 i leaves thesecond surface 14 b of theintegrated circuit 14 exposed. - With reference to
FIG. 14 the electronic device 1 l is shown which is a further embodiment of the electronic device ofFIG. 11 , wherein the protective package 11 l leaves thesecond surface 14 b of theintegrated circuit 14 exposed. - With reference to
FIG. 15 , thedevice 1 ofFIG. 1 is shown wherein anintegrated circuit 16 is mounted on thesubstrate 2 flanked by theMEMS device 6, and fixed to thesubstrate 2, for example by means of awelding layer 16 b. - The
integrated circuit 16 is electrically coupled to thesubstrate 2 by means of furtherelectric connections 16 a. - The
protective package 11, realized through molding, incorporates theMEMS device 6 with theelectric connections 10, theintegrated circuit 16 with theelectric connections 16 a and thesubstrate 2, leaving thesensitive portion 9 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 16 , thedevice 1 d ofFIG. 5 is shown wherein anintegrated circuit 16 is mounted on thesubstrate 2 flanked to theMEMS device 6, and fixed to thesubstrate 2, for example by means of awelding layer 16 b. - The
integrated circuit 16 is electrically coupled to thesubstrate 2 by means of furtherelectric connections 16 a. - The
protective package 11 d, realized through molding, incorporates theMEMS device 6, theunderfiller 13, theintegrated circuit 16 with the furtherelectric connections 16 a and thesubstrate 2, leavingsensitive portion 9 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 17 , the device 1 a ofFIG. 2 is shown wherein anintegrated circuit 16 is mounted on thesubstrate 2 flanked to thedevice MEMS 6, and fixed to thesubstrate 2, for example by means of awelding layer 16 b. - The
integrated circuit 16 is electrically coupled to thesubstrate 2 by means of furtherelectric connections 16 a. - The
protective package 11 a, realized through molding, incorporates theMEMS device 6 with theelectric connections 10, theintegrated circuit 16 with the furtherelectric connections 16 a and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 18 , the device 1 e ofFIG. 6 is shown wherein anintegrated circuit 16 is mounted on thesubstrate 2 flanked to theMEMS device 6, and fixed to thesubstrate 2, for example by means of awelding layer 16 b. - The
integrated circuit 16 is electrically coupled to thesubstrate 2 by means of furtherelectric connections 16 a. - The
protective package 11 e, realized through molding, incorporates theMEMS device 6, theunderfiller 13, theintegrated circuit 16 with the furtherelectric connections 16 a and thesubstrate 2, leaving thesensitive portion 9 and the nonactive surface 7 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 19 , thedevice 1 h ofFIG. 9 is shown wherein a secondintegrated circuit 16 is mounted on thesubstrate 2 flanked to theMEMS device 6, and fixed to thesubstrate 2, for example by means of awelding layer 16 b. - The second
integrated circuit 16 is electrically coupled to thesubstrate 2 by means of furtherelectric connections 16 a. - A third
integrated circuit 17 is mounted on thesecond surface 14 b of theintegrated circuit 14, and electrically coupled to thesubstrate 2 by means of furtherelectric connections 17 a. - A fourth
integrated circuit 18 is mounted on the secondintegrated circuit 16 and electrically coupled to thesubstrate 2 by means of furtherelectric connections 18 a. - The
protective package 11 h, realized through molding, incorporates theMEMS device 6, theelectric connections 10, theintegrated circuits electric connections substrate 2, leaving thesensitive portion 9 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - With reference to
FIG. 20 , thedevice 1 g ofFIG. 11 is shown wherein a secondintegrated circuit 16 is mounted on thesubstrate 2 flanked to theMEMS device 6, and fixed to thesubstrate 2, for example by means of awelding layer 16 b. - The second
integrated circuit 16 is electrically coupled to thesubstrate 2 by means of furtherelectric connections 16 a. - A third
integrated circuit 17 is mounted on thesecond surface 14 b of theintegrated circuit 14, and electrically coupled to thesubstrate 2 by means of furtherelectric connections 17 a. - A fourth
integrated circuit 18 is mounted on the secondintegrated circuit 16 and electrically coupled to thesubstrate 2 by means of furtherelectric connections 18 a. - The
protective package 11 g, realized through molding, incorporates theMEMS device 6, theunderfiller 13, theintegrated circuits electric connections substrate 2, leaving thesensitive portion 9 of theMEMS device 6, as well as thelower surface 4 and theopening 5 of thesubstrate 2 exposed. - Advantageously, the
integrated circuits example accelerometers 14,gyroscopes 18,magnetometers 17 to form an IMU (inertial measurement unit). - These integrated circuits can be put in different configurations inside the protective package on the basis of their dimensions and geometric features.
- With devices according to embodiments it is possible to realize microphones, pressure, gas, chemical sensors, which are encapsulated in a protective package realized by means of molding. These devices can, in turn, be contained in a variety of different types of electronic systems, such as barometric systems, audio systems, computer systems, control systems, safety systems, and so on.
- It is then possible to integrate more sensors (accelerometers and pressure sensors) in the same
protective package 11, for example to realize the IMU, or for barometric stations by integrating, for example, a pressure sensor and a humidity sensor. - Advantageously, in electronic devices according to one embodiment and previously described, the electronic device as a whole shows an overall dimension included between 3×3×1 mm̂3, while the
MEMS device 6 has a width of 1500 μm a length of 1500 μm and a thickness of 700 μm. - The
sensitive portion 9 of theMEMS device 6 has a diameter included between 100 μm and 1000 μm. - The distance between the
active surface 8 of theMEMS device 6 and theupper surface 3 of the substrate is included between 50 and 500 μm, while the thickness of the substrate is included between about 150 and 300 μm and the width of theopening 5 is included between 100 and 700 μm. - If the
barrier element 12 is realized with a ring of welding paste it has a thickness of a cross section included between 60 and 300 μm. - If the
barrier element - In conclusion, electronic devices according to embodiments are particularly compact and use technical solutions which do not provide critical alignments. Advantageously according to embodiments, the presence of the
barrier element sensitive portion 9 of theMEMS device 6 during the manufacturing steps of theprotective package 11 or during the dispensing step of theunderfiller 13 in theelectronic device 1. - In particular, according to embodiments, this
barrier element - These
barrier elements substrate 2 and on theMEMS device 6. - From the foregoing it will be appreciated that, although specific embodiments have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the present disclosure.
Claims (21)
1-48. (canceled)
49. An electronic device, comprising:
a substrate having an opening;
a die coupled to the substrate, the die including an active surface having a sensitive portion exposed by the opening of the substrate and configured to sense a physical parameter of a substance in contact with the sensitive area;
a protective package surrounding the substrate and the die but not surrounding the active surface.
50. The electronic device of claim 49 further comprising a barrier element to isolate the active surface from the protective package, the barrier including a ring formed adjoining a surface of the substrate and the active surface of die.
51. The electronic device of claim 50 , wherein the barrier element includes a periphery surface that is completely covered by the protective package.
52. The electronic device of claim 50 , wherein the barrier element comprises an irregular area formed on a surface of the substrate surrounding and adjacent to the opening.
53. The electronic device of claim 50 , wherein the barrier element comprises an irregular area formed on the active surface of the die surrounding the sensitive portion.
54. The electronic device of claim 49 , wherein the die comprises a MEMS device.
55. The electronic device of claim 49 , wherein the substance comprises a liquid.
56. The electronic device of claim 49 , wherein the substance comprises a gas.
57. The electronic device of claim 56 , wherein the physical parameter of the substance comprises a chemical property of the gas.
58. The electronic device of claim 49 , further comprising at least one additional die electronically coupled to the substrate.
59. The electronic device of claim 58 , wherein at least one additional die is formed on the substrate flanking the die.
60. An electronic system, comprising:
electronic circuitry including a sensor, the sensor including,
a substrate having an opening;
a die coupled to the substrate, the die including an active surface having a sensitive portion exposed by the opening of the substrate and configured to sense a physical parameter of a substance in contact with the sensitive area;
a protective package surrounding the substrate and the die but not surrounding the active surface.
61. The electronic system of claim 60 , wherein the sensor comprises one of a microphone, pressure sensor, gas sensor, flow sensor, and pH sensor.
62. The electronic system of claim 60 , wherein the electronic circuitry comprises one of barometric circuitry, audio circuitry, computer circuitry, control circuitry, test equipment circuitry, or safety system circuitry.
63. A microphone, comprising:
a substrate having an opening;
a die coupled to the substrate, the die including an active surface having a pressure-sensitive portion exposed by the opening of the substrate and configured to sense acoustic energy;
a protective package surrounding the substrate and the die such that the pressure-sensitive portion remains exposed.
64. The microphone of claim 63 , further comprising electronic circuitry configured to transduce sensed acoustic energy into electrical signals.
65. The microphone of claim 63 , wherein the acoustic energy comprises sound waves.
66. The microphone of claim 63 , wherein the active surface is integrated with the die.
67. The microphone of claim 63 , wherein the die further comprises a MEMS device.
68. The microphone of claim 63 , wherein the die comprises a single integrated circuit die.
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US13/275,092 US8546895B2 (en) | 2007-01-04 | 2011-10-17 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
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ITMI20070008 ITMI20070008A1 (en) | 2007-01-04 | 2007-01-04 | ELECTRONIC DEVICE INCLUDING MEMS AND SUBSTRATES HANGED IN PARTICULAR OF LGA OR BGA TYPE |
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ITMI2007A000007 | 2007-01-04 | ||
ITMI2007A0008 | 2007-01-04 | ||
ITMI20070007 ITMI20070007A1 (en) | 2007-01-04 | 2007-01-04 | PACKAGE IN PARTICULAR FOR MEMS DEVICES |
ITMI2007A000008 | 2007-01-04 | ||
US12/006,819 US7875942B2 (en) | 2007-01-04 | 2008-01-04 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
US12/969,022 US8043881B2 (en) | 2007-01-04 | 2010-12-15 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
US13/275,092 US8546895B2 (en) | 2007-01-04 | 2011-10-17 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
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US12/969,022 Continuation US8043881B2 (en) | 2007-01-04 | 2010-12-15 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
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US13/275,092 Active US8546895B2 (en) | 2007-01-04 | 2011-10-17 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
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US12/006,709 Active 2028-09-18 US7898043B2 (en) | 2007-01-04 | 2008-01-04 | Package, in particular for MEMS devices and method of making same |
US12/969,022 Active US8043881B2 (en) | 2007-01-04 | 2010-12-15 | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
US12/982,458 Active US7998774B2 (en) | 2007-01-04 | 2010-12-30 | Package, in particular for MEMS devices and method of making same |
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Also Published As
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US20110081739A1 (en) | 2011-04-07 |
US7898043B2 (en) | 2011-03-01 |
US8546895B2 (en) | 2013-10-01 |
US20110092009A1 (en) | 2011-04-21 |
US7875942B2 (en) | 2011-01-25 |
US7998774B2 (en) | 2011-08-16 |
US20080179697A1 (en) | 2008-07-31 |
US8043881B2 (en) | 2011-10-25 |
US20080164543A1 (en) | 2008-07-10 |
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