US20110193089A1 - Pixel structure, method of fabricating the same, and method of fabricating electronic device - Google Patents
Pixel structure, method of fabricating the same, and method of fabricating electronic device Download PDFInfo
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- US20110193089A1 US20110193089A1 US12/753,098 US75309810A US2011193089A1 US 20110193089 A1 US20110193089 A1 US 20110193089A1 US 75309810 A US75309810 A US 75309810A US 2011193089 A1 US2011193089 A1 US 2011193089A1
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims abstract description 64
- 230000001699 photocatalysis Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 24
- 238000009413 insulation Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000002161 passivation Methods 0.000 claims description 68
- 239000002105 nanoparticle Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- 239000000565 sealant Substances 0.000 claims description 12
- 229910006854 SnOx Inorganic materials 0.000 claims description 8
- 229910003087 TiOx Inorganic materials 0.000 claims description 8
- 229910007667 ZnOx Inorganic materials 0.000 claims description 8
- 229910003134 ZrOx Inorganic materials 0.000 claims description 8
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- -1 TiSiOx Inorganic materials 0.000 claims description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 4
- 229910052950 sphalerite Inorganic materials 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 5
- 239000010408 film Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 10
- 238000005401 electroluminescence Methods 0.000 description 6
- 230000002542 deteriorative effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000012780 transparent material Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Definitions
- the present invention generally relates to a pixel structure, and more particularly, to a pixel structure, a method of fabricating the pixel structure, and a method of fabricating an electronic device having the pixel structure.
- An electroluminescence apparatus is a self-emissive apparatus.
- the electroluminescence apparatus offers unlimited viewing angles, low fabricating cost, high response rate (over a hundred times of that of liquid crystal), low power consumption, adaptability to direct current (DC) driving of portable equipments, large operating temperature range, and light weight, and the size and thickness thereof can be reduced according to those of the corresponding hardware equipment. Accordingly, the electroluminescence apparatus is a very promising technique and is about to become one of the next-generation flat panel displays.
- an active electroluminescence apparatus includes a plurality of pixel structures, and each of the pixel structures includes an active device and a light emitting device electrically connected to the active device.
- the active device may be a thin film transistor (TFT), and which includes a gate, a source and a drain, and a semiconductor layer.
- TFT thin film transistor
- the light emitting device is composed of an upper electrode layer, a lower electrode layer, and a light emitting layer disposed between the two electrode layers.
- the lower electrode layer of the light emitting device is electrically connected to the source or the drain of the active device so that the active device is served as a switch that controls the light emitting device.
- the surface of the lower electrode layer is usually cleaned to remove contaminant by using ultraviolet light and ozone.
- the device characteristics of the active device may be deteriorated when the ultraviolet light is irradiated on the semiconductor layer of the active device. As a result, the device characteristics of the pixel structure and the electroluminescence apparatus are also affected.
- the present invention is directed to a pixel structure, wherein the pixel structure is prevented from deteriorating when it is irradiated by ultraviolet light.
- the present invention is also directed to a method of fabricating a pixel structure, wherein the pixel structure is prevented from deteriorating when it is irradiated by ultraviolet light.
- the present invention is further directed to a method of fabricating an electronic device, wherein the electronic device has good device characteristics.
- the present invention provides a pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer.
- the gate is disposed on the substrate.
- the insulation layer covers the gate.
- the MOS layer is disposed on the insulation layer above the gate.
- the source and the drain are disposed on the MOS layer.
- the film layer covers the MOS layer.
- the film layer includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light from reaching the MOS layer.
- the first electrode layer is electrically connected to the source or the drain.
- the present invention also provides a method of fabricating a pixel structure.
- a gate is formed on a substrate.
- an insulation layer is formed on the gate.
- a MOS layer is formed on the insulation layer above the gate.
- a source and a drain are formed on the MOS layer.
- at least one film layer is formed.
- the film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light from reaching the MOS layer.
- a first electrode layer is formed, wherein the first electrode layer is electrically connected to the source or the drain.
- the present invention further provides a method of fabricating an electronic device. First, a plurality of pixel structures is formed on a substrate, wherein each of the pixel structures is fabricated through the method described above. Then, a sealant is formed on the surface of the substrate. Next, a cover is formed on the substrate, wherein the cover shelters the pixel structures and is in contact with the sealant. After that, an ultraviolet curing procedure is performed to cure the sealant.
- a film layer including a transparent photocatalytic material is formed on a MOS layer so that the MOS layer is protected from the irradiation of ultraviolet light.
- the pixel structure is prevented from deteriorating under the irradiation of the ultraviolet light, and accordingly the pixel structure and an electronic device having the same can have good device characteristics.
- FIG. 1 is a cross-sectional diagram of a pixel structure according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional diagram of a pixel structure according to another embodiment of the present invention.
- FIG. 3 is an equivalent circuit diagram of a pixel array according to an embodiment of the present invention.
- FIG. 4 is a diagram of an electronic device according to an embodiment of the present invention.
- FIG. 5 is a diagram of an electronic device according to another embodiment of the present invention.
- FIGS. 6A-6F are cross-sectional diagrams illustrating a method of fabricating the pixel structure in FIG. 2 .
- FIGS. 7A-7C are cross-sectional diagrams illustrating a method of fabricating an electronic device.
- FIG. 1 is a cross-sectional diagram of a pixel structure according to an embodiment of the present invention.
- the pixel structure 100 includes a substrate 102 , a gate 112 , an insulation layer 120 , a metal oxide semiconductor (MOS) layer 130 , a source 134 and a drain 136 , a first passivation layer 140 , and a first electrode layer 162 .
- the gate 112 , the MOS layer 130 , the source 134 , and the drain 136 form an active device 110 .
- the gate 112 is disposed on the substrate 102 .
- the insulation layer 120 covers the gate 112 .
- the MOS layer 130 is disposed on the insulation layer 120 above the gate 112 .
- the source 134 and the drain 136 are disposed on the MOS layer 130 .
- the first passivation layer 140 is disposed on the source 134 and the drain 136 and covers the MOS layer 130 .
- the MOS layer 130 may be made of indium-gallium-zinc oxide (IGZO), indium-zinc oxide (IZO), gallium-zinc oxide (GZO), zinc-tin oxide (ZTO), or zinc oxide (ZnO).
- the pixel structure 100 further includes a light-emitting material layer 164 , a second electrode layer 166 , and a second passivation layer 150 .
- the first electrode layer 162 , the light-emitting material layer 164 , and the second electrode layer 166 form a light emitting device 160 .
- the first electrode layer 162 is disposed on the first passivation layer 140 , and the first electrode layer 162 may be electrically connected to the source 134 through a contact window opening 142 in the first passivation layer 140 .
- the second passivation layer 150 is disposed on the first passivation layer 140 and has an opening 152 for exposing the first electrode layer 162 .
- the light-emitting material layer 164 may be disposed on the first electrode layer 162 exposed by the opening 152 .
- the second electrode layer 166 covers the light-emitting material layer 164 and is extended onto the surface of the second passivation layer 150 .
- the first electrode layer 162 is electrically connected to the source 134 through the contact window opening 142 in the first passivation layer 140 .
- the first electrode layer 162 may also be electrically connected to the drain 136 through a contact window opening (not shown) in the first passivation layer 140 .
- the first electrode layer 162 may be a metal electrode layer or a transparent conductive layer.
- the light-emitting material layer 164 may be an organic light emitting layer or an inorganic light emitting layer.
- the light-emitting material layer 164 may be a red organic light emitting pattern, a green organic light emitting pattern, a blue organic light emitting pattern, or a light emitting pattern of other color (for example, white, orange, and purple, etc) produced by mixing lights of various wavelengths.
- the second electrode layer 166 may be a metal electrode layer or a transparent conductive layer.
- At least one of the first passivation layer 140 and the second passivation layer 150 includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light with a wavelength of about 170 to about 350 nm from reaching the MOS layer 130 .
- the transparent photocatalytic material includes insulating metal oxide or metal oxide nanoparticles, wherein the insulating metal oxide may be TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, or ZnS, and the metal oxide nanoparticles may be TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, or ZnS nanoparticles.
- the film layer containing the transparent photocatalytic material may be insulating metal oxide or an insulating material containing metal oxide nanoparticles.
- the pixel structure 100 may have another film layer that includes the transparent photocatalytic material.
- the pixel structure 100 further includes an etch stop layer 132 .
- the etch stop layer 132 is disposed on the surface of the MOS layer 130 , and the first passivation layer 140 covers the source 134 and the drain 136 and the etch stop layer 132 .
- at least one of the etch stop layer 132 , the first passivation layer 140 , and the second passivation layer 150 includes the transparent photocatalytic material.
- the film layer including the transparent photocatalytic material may also be other insulating film layer that covers the MOS layer 130 .
- the pixel structure 100 having the light-emitting material layer 164 is described as an example in foregoing embodiments, in other embodiments, the pixel structure may also come without the light-emitting material layer and be applied in a device requiring no light-emitting material layer, such as a device in the active array substrate of a liquid crystal display (LCD).
- LCD liquid crystal display
- the pixel structure can have good device characteristics.
- FIG. 3 is an equivalent circuit diagram of a pixel array according to an embodiment of the present invention.
- the pixel array 20 is disposed on the substrate 102 .
- the pixel array 20 includes a plurality of pixel units 22 .
- Each of the pixel units 22 includes the pixel structure 100 as shown in FIG. 1 or FIG. 2 , an active device T, and a capacitor CS.
- the pixel array 20 further includes a plurality of scan lines SL, a plurality of data lines DL, and a plurality of power lines PL.
- Each of the pixel units 22 is electrically connected to the corresponding scan line SL, the corresponding data line DL, and the corresponding power line PL.
- each pixel unit 22 includes the active devices 110 and T, the light emitting device 160 , and the capacitor CS.
- the active device 110 includes a gate 112 , a MOS layer 130 , a source 134 , and a drain 136 (referring to FIG. 1 and FIG. 2 ).
- the light emitting device 160 includes a first electrode layer 162 , a light-emitting material layer 164 , and a second electrode layer 166 (referring to FIG. 1 and FIG. 2 ).
- the active device T and the capacitor CS have the structures well known to those having ordinary knowledge in the art therefore will not be described herein.
- each pixel unit 22 has two active devices and one capacitor (2T1C).
- the present invention is not limited thereto, and the numbers of active devices and capacitors in each pixel unit 22 are not limited in the present invention.
- the source S of the active device T is connected to a data line DL
- the gate G thereof is electrically connected to a scan line SL
- the drain D thereof is connected to the gate 112 of the active device 110
- the gate 112 of the active device 110 is electrically connected to the drain D of the active device T
- the source 134 thereof is electrically connected to a power line PL
- the drain 136 thereof is electrically connected to the light emitting device 160 .
- One end of the capacitor CS is electrically connected to the drain D of the active device T and the gate of the active device 110
- the other end of the capacitor CS is electrically connected to the source 134 of the active device 110 and a power line PL.
- FIG. 4 is a diagram of an electronic device according to an embodiment of the present invention.
- the electronic device 10 includes a pixel array 20 including a plurality of the pixel structure 100 illustrated in FIG. 1 and FIG. 2 , a sealant 30 , and a cover 32 .
- the sealant 30 may be an ultraviolet curing adhesive
- the cover 32 may be a glass cover, a plastic cover, or a cover in other transparent material.
- the electronic device 10 having the pixel structure 100 may be an electroluminescence apparatus.
- the pixel structure in the present invention may also come without the light-emitting material layer, so that the pixel structure may also be applied to other types of electronic devices.
- a passivation film 40 may also be formed on the pixel array 20 illustrated in FIG. 3 , so as to form an electronic device 10 a.
- the pixel structure, a pixel array having such pixel structures, and an electronic device having such pixel structures can all have good device characteristics.
- the method of fabricating the pixel structure in the present invention will be described herein.
- the method of fabricating the pixel structure in FIG. 1 is similar to that of fabricating the pixel structure in FIG. 2 , and the major difference between the two methods is that no etch stop layer is formed in the method of fabricating the pixel structure in FIG. 1 .
- the method of fabricating the pixel structure in FIG. 2 will be described as an example, and the method of fabricating the pixel structure in FIG. 1 will not be described.
- FIGS. 6A-6E are cross-sectional diagrams illustrating a method of fabricating the pixel structure in FIG. 2 .
- a gate 112 is formed on a substrate 102 .
- an insulation layer 120 is formed on the gate 112 .
- the substrate 102 may be a rigid substrate (for example, a glass substrate) or a flexible substrate (for example, a plastic substrate).
- the gate 112 may be made of a metal material and formed by physical vapor deposition (PVD).
- PVD physical vapor deposition
- an insulation layer 120 is formed on the gate 112 .
- the insulation layer 120 may be made of silicon nitride or silicon oxide.
- a MOS layer 130 is formed on the insulation layer 120 above the gate 112 .
- the MOS layer 130 may be made of IGZO.
- an etch stop layer 132 is formed on the MOS layer 130 .
- a source 134 and a drain 136 are formed on the MOS layer 130 .
- the source 134 and the drain 136 may be made of a metal material and formed by PVD.
- a first passivation material layer (not shown) is formed on the source 134 and the drain 136 , and the MOS layer 130 is covered.
- the first passivation material layer is patterned to form a first passivation layer 140 having a contact window opening 142 , wherein the contact window opening 142 may expose the source 134 .
- a first electrode layer 162 is formed, and the first electrode layer 162 is filled in the contact window opening 142 to be electrically connected with the source 134 .
- the first electrode layer 162 may be a metal electrode layer or a transparent conductive layer.
- a second passivation material layer (not shown) is formed on the first passivation layer 140 , and the first electrode layer 162 is covered. After that, the second passivation material layer is patterned to form a second passivation layer 150 having an opening 152 , wherein the opening 152 exposes the first electrode layer 162 .
- At least one of the etch stop layer 132 , the first passivation layer 140 , and the second passivation layer 150 includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light with a wavelength of about 170 to about 350 nm from reaching the MOS layer 130 .
- the transparent photocatalytic material includes insulating metal oxide or metal oxide nanoparticles, wherein the insulating metal oxide may be TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, or ZnS, and the metal oxide nanoparticles may be TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, or ZnS nanoparticles.
- a film layer including the transparent photocatalytic material may be insulating metal oxide or an insulating material containing metal oxide nanoparticles.
- an ultraviolet cleaning procedure UV 1 is performed on the surface of the first electrode layer 162 to remove contaminant on the surface.
- the ultraviolet cleaning procedure UV 1 includes supplying ozone and irradiating with an ultraviolet light, wherein the wavelength of the ultraviolet light is about 172 nm.
- the wavelength of the ultraviolet light is not limited thereto, and which can be changed by a designer according to the actual requirement. It should be noted that because at least one of the etch stop layer 132 , the first passivation layer 140 , and the second passivation layer 150 includes a transparent photocatalytic material, the ultraviolet light used during the ultraviolet cleaning procedure UV 1 is prevented from irradiating the MOS layer 130 .
- a light-emitting material layer 164 is formed on the first electrode layer 162 and a second electrode layer 166 is formed on the light-emitting material layer 164 .
- the light-emitting material layer 164 may be an organic light emitting layer or an inorganic light emitting layer, and which may be filled in the opening 152 of the second passivation layer 150 .
- the second electrode layer 166 may be a metal electrode layer or a transparent conductive layer. The second electrode layer 166 covers the light-emitting material layer 164 and is extended onto the surface of the second passivation layer 150 .
- a sealing procedure is further performed to complete the fabrication of the electronic device after a plurality of pixel structures 100 is formed on the substrate 102 through the process described above. Below, the process of fabricating the electronic device will be described with reference to FIGS. 7A-7C .
- FIGS. 7A-7C are cross-sectional diagrams illustrating a method of fabricating an electronic device.
- a plurality of pixel structures 100 is formed on a substrate 102 through the process illustrated in FIGS. 6A-6F , so as to form a pixel array 20 .
- the pixel array 20 includes a plurality of pixel structures 100 and capacitors CS, active devices T, data lines DL, scan lines SL, and power lines PL. Since the techniques of fabricating the capacitors CS, the active devices T, the data lines DL, the scan lines SL, and the power lines PL are well known to those having ordinary knowledge in the art therefore will not be described herein.
- a sealant 30 is formed on the surface of the substrate 102 .
- the sealant 30 may be an ultraviolet curing adhesive.
- a cover 32 is formed on the substrate 102 , wherein the cover 32 shelters the pixel structures (i.e., the pixel array 20 ) and is in contact with the sealant 30 .
- the cover 32 may be a glass cover, a plastic cover, or a cover of other transparent material.
- an ultraviolet curing procedure UV 2 is performed to cure the sealant 30 , so as to form the electronic device 10 .
- the ultraviolet light used in the ultraviolet curing procedure UV 2 has a wavelength of about 313 nm.
- the wavelength of the ultraviolet light is not limited thereto, and which can be changed by a designer according to the actual requirement. It should be noted that because at least one of the etch stop layer 132 , the first passivation layer 140 , and the second passivation layer 150 in the pixel structure 100 includes a transparent photocatalytic material, the ultraviolet light used during the ultraviolet curing procedure UV 2 is prevented from irradiating the MOS layer 130 .
- the ultraviolet light used in the ultraviolet cleaning procedure, the ultraviolet curing procedure, or other procedures is prevented from irradiating the MOS layer by forming a film layer including a transparent photocatalytic material on the MOS layer. Accordingly, deterioration of device characteristics (for example, increase of an off current and shifting of a threshold voltage, etc) caused by the irradiation of the ultraviolet light on the MOS layer is prevented.
- the pixel structure and the electronic device having such pixel structures can have good device characteristics.
- a film layer including a transparent photocatalytic material is formed on a MOS layer so that the MOS layer is protected from the irradiation of ultraviolet light.
- the pixel structure is prevented from deteriorating under the irradiation of the ultraviolet light, and accordingly the pixel structure and an electronic device having the same can have good device characteristics.
- the present invention ultraviolet light is blocked and accordingly the MOS layer is protected by changing the material of a film layer, such as an etch stop layer or a passivation layer. Namely, according to the present invention, no additional structure is to be formed in the pixel structure.
- the pixel structure in the present invention can be applied to an existing pixel structure layout and can be fabricated by using existing pixel structure fabricating process and machine. Thereby, the fabricating cost of the pixel structure in the present invention is not increased.
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Abstract
A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.
Description
- This application claims the priority benefit of Taiwan application serial no. 99104156, filed on Feb. 10, 2010. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of specification.
- 1. Field of the Invention
- The present invention generally relates to a pixel structure, and more particularly, to a pixel structure, a method of fabricating the pixel structure, and a method of fabricating an electronic device having the pixel structure.
- 2. Description of Related Art
- An electroluminescence apparatus is a self-emissive apparatus. The electroluminescence apparatus offers unlimited viewing angles, low fabricating cost, high response rate (over a hundred times of that of liquid crystal), low power consumption, adaptability to direct current (DC) driving of portable equipments, large operating temperature range, and light weight, and the size and thickness thereof can be reduced according to those of the corresponding hardware equipment. Accordingly, the electroluminescence apparatus is a very promising technique and is about to become one of the next-generation flat panel displays.
- For example, an active electroluminescence apparatus includes a plurality of pixel structures, and each of the pixel structures includes an active device and a light emitting device electrically connected to the active device. The active device may be a thin film transistor (TFT), and which includes a gate, a source and a drain, and a semiconductor layer. The light emitting device is composed of an upper electrode layer, a lower electrode layer, and a light emitting layer disposed between the two electrode layers. The lower electrode layer of the light emitting device is electrically connected to the source or the drain of the active device so that the active device is served as a switch that controls the light emitting device.
- During the fabrication of a pixel structure, after the lower electrode layer is formed on the active device, the surface of the lower electrode layer is usually cleaned to remove contaminant by using ultraviolet light and ozone. However, the device characteristics of the active device may be deteriorated when the ultraviolet light is irradiated on the semiconductor layer of the active device. As a result, the device characteristics of the pixel structure and the electroluminescence apparatus are also affected.
- Accordingly, the present invention is directed to a pixel structure, wherein the pixel structure is prevented from deteriorating when it is irradiated by ultraviolet light.
- The present invention is also directed to a method of fabricating a pixel structure, wherein the pixel structure is prevented from deteriorating when it is irradiated by ultraviolet light.
- The present invention is further directed to a method of fabricating an electronic device, wherein the electronic device has good device characteristics.
- The present invention provides a pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer. The film layer includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.
- The present invention also provides a method of fabricating a pixel structure. First, a gate is formed on a substrate. Then, an insulation layer is formed on the gate. Next, a MOS layer is formed on the insulation layer above the gate. After that, a source and a drain are formed on the MOS layer. Next, at least one film layer is formed. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light from reaching the MOS layer. Thereafter, a first electrode layer is formed, wherein the first electrode layer is electrically connected to the source or the drain.
- The present invention further provides a method of fabricating an electronic device. First, a plurality of pixel structures is formed on a substrate, wherein each of the pixel structures is fabricated through the method described above. Then, a sealant is formed on the surface of the substrate. Next, a cover is formed on the substrate, wherein the cover shelters the pixel structures and is in contact with the sealant. After that, an ultraviolet curing procedure is performed to cure the sealant.
- As described above, in the present invention, a film layer including a transparent photocatalytic material is formed on a MOS layer so that the MOS layer is protected from the irradiation of ultraviolet light. Thereby, the pixel structure is prevented from deteriorating under the irradiation of the ultraviolet light, and accordingly the pixel structure and an electronic device having the same can have good device characteristics.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
-
FIG. 1 is a cross-sectional diagram of a pixel structure according to an embodiment of the present invention. -
FIG. 2 is a cross-sectional diagram of a pixel structure according to another embodiment of the present invention. -
FIG. 3 is an equivalent circuit diagram of a pixel array according to an embodiment of the present invention. -
FIG. 4 is a diagram of an electronic device according to an embodiment of the present invention. -
FIG. 5 is a diagram of an electronic device according to another embodiment of the present invention. -
FIGS. 6A-6F are cross-sectional diagrams illustrating a method of fabricating the pixel structure inFIG. 2 . -
FIGS. 7A-7C are cross-sectional diagrams illustrating a method of fabricating an electronic device. - Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
-
FIG. 1 is a cross-sectional diagram of a pixel structure according to an embodiment of the present invention. Referring toFIG. 1 , thepixel structure 100 includes asubstrate 102, agate 112, aninsulation layer 120, a metal oxide semiconductor (MOS)layer 130, asource 134 and adrain 136, afirst passivation layer 140, and afirst electrode layer 162. Thegate 112, theMOS layer 130, thesource 134, and thedrain 136 form anactive device 110. To be specific, thegate 112 is disposed on thesubstrate 102. Theinsulation layer 120 covers thegate 112. TheMOS layer 130 is disposed on theinsulation layer 120 above thegate 112. Thesource 134 and thedrain 136 are disposed on theMOS layer 130. Thefirst passivation layer 140 is disposed on thesource 134 and thedrain 136 and covers theMOS layer 130. In the present embodiment, theMOS layer 130 may be made of indium-gallium-zinc oxide (IGZO), indium-zinc oxide (IZO), gallium-zinc oxide (GZO), zinc-tin oxide (ZTO), or zinc oxide (ZnO). - As shown in
FIG. 1 , in the present embodiment, thepixel structure 100 further includes a light-emittingmaterial layer 164, asecond electrode layer 166, and asecond passivation layer 150. Thefirst electrode layer 162, the light-emittingmaterial layer 164, and thesecond electrode layer 166 form alight emitting device 160. To be specific, thefirst electrode layer 162 is disposed on thefirst passivation layer 140, and thefirst electrode layer 162 may be electrically connected to thesource 134 through acontact window opening 142 in thefirst passivation layer 140. Thesecond passivation layer 150 is disposed on thefirst passivation layer 140 and has anopening 152 for exposing thefirst electrode layer 162. The light-emittingmaterial layer 164 may be disposed on thefirst electrode layer 162 exposed by theopening 152. Thesecond electrode layer 166 covers the light-emittingmaterial layer 164 and is extended onto the surface of thesecond passivation layer 150. It should be noted that in the present embodiment, thefirst electrode layer 162 is electrically connected to thesource 134 through thecontact window opening 142 in thefirst passivation layer 140. However, in other embodiments, thefirst electrode layer 162 may also be electrically connected to thedrain 136 through a contact window opening (not shown) in thefirst passivation layer 140. - In the present embodiment, the
first electrode layer 162 may be a metal electrode layer or a transparent conductive layer. The light-emittingmaterial layer 164 may be an organic light emitting layer or an inorganic light emitting layer. For example, the light-emittingmaterial layer 164 may be a red organic light emitting pattern, a green organic light emitting pattern, a blue organic light emitting pattern, or a light emitting pattern of other color (for example, white, orange, and purple, etc) produced by mixing lights of various wavelengths. Thesecond electrode layer 166 may be a metal electrode layer or a transparent conductive layer. - It should be noted that in the present embodiment, at least one of the
first passivation layer 140 and thesecond passivation layer 150 includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light with a wavelength of about 170 to about 350 nm from reaching theMOS layer 130. The transparent photocatalytic material includes insulating metal oxide or metal oxide nanoparticles, wherein the insulating metal oxide may be TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, or ZnS, and the metal oxide nanoparticles may be TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, or ZnS nanoparticles. Namely, the film layer containing the transparent photocatalytic material may be insulating metal oxide or an insulating material containing metal oxide nanoparticles. - In the present embodiment, at least one of the
first passivation layer 140 and thesecond passivation layer 150 includes the transparent photocatalytic material. However, thepixel structure 100 may have another film layer that includes the transparent photocatalytic material. For example, as shown inFIG. 2 , according to another embodiment of the present invention, thepixel structure 100 further includes anetch stop layer 132. Theetch stop layer 132 is disposed on the surface of theMOS layer 130, and thefirst passivation layer 140 covers thesource 134 and thedrain 136 and theetch stop layer 132. In the embodiment illustrated inFIG. 2 , at least one of theetch stop layer 132, thefirst passivation layer 140, and thesecond passivation layer 150 includes the transparent photocatalytic material. Moreover, in other embodiments, the film layer including the transparent photocatalytic material may also be other insulating film layer that covers theMOS layer 130. Furthermore, even though apixel structure 100 having the light-emittingmaterial layer 164 is described as an example in foregoing embodiments, in other embodiments, the pixel structure may also come without the light-emitting material layer and be applied in a device requiring no light-emitting material layer, such as a device in the active array substrate of a liquid crystal display (LCD). - In the embodiment described above, deterioration of device characteristics (for example, increase of an off current and shifting of a threshold voltage, etc) when ultraviolet light is irradiated on the MOS layer is prevented by forming a film layer including a transparent photocatalytic material on the MOS layer. Accordingly, the pixel structure can have good device characteristics.
- It should be mentioned that substantially the
pixel structure 100 illustrated inFIG. 1 andFIG. 2 can be further integrated with an active device and a capacitor to form a pixel unit, and a plurality of the pixel units can form a pixel array.FIG. 3 is an equivalent circuit diagram of a pixel array according to an embodiment of the present invention. - Referring to
FIG. 3 , thepixel array 20 is disposed on thesubstrate 102. Thepixel array 20 includes a plurality ofpixel units 22. Each of thepixel units 22 includes thepixel structure 100 as shown inFIG. 1 orFIG. 2 , an active device T, and a capacitor CS. According to an embodiment of the present invention, thepixel array 20 further includes a plurality of scan lines SL, a plurality of data lines DL, and a plurality of power lines PL. Each of thepixel units 22 is electrically connected to the corresponding scan line SL, the corresponding data line DL, and the corresponding power line PL. To be specific, in the present embodiment, eachpixel unit 22 includes theactive devices 110 and T, thelight emitting device 160, and the capacitor CS. Theactive device 110 includes agate 112, aMOS layer 130, asource 134, and a drain 136 (referring toFIG. 1 andFIG. 2 ). Thelight emitting device 160 includes afirst electrode layer 162, a light-emittingmaterial layer 164, and a second electrode layer 166 (referring toFIG. 1 andFIG. 2 ). The active device T and the capacitor CS have the structures well known to those having ordinary knowledge in the art therefore will not be described herein. Additionally, in the present embodiment, eachpixel unit 22 has two active devices and one capacitor (2T1C). However, the present invention is not limited thereto, and the numbers of active devices and capacitors in eachpixel unit 22 are not limited in the present invention. - In the present embodiment, in each
pixel unit 22 having the 2T1C structure, the source S of the active device T is connected to a data line DL, the gate G thereof is electrically connected to a scan line SL, and the drain D thereof is connected to thegate 112 of theactive device 110. Thegate 112 of theactive device 110 is electrically connected to the drain D of the active device T, thesource 134 thereof is electrically connected to a power line PL, and thedrain 136 thereof is electrically connected to thelight emitting device 160. One end of the capacitor CS is electrically connected to the drain D of the active device T and the gate of theactive device 110, and the other end of the capacitor CS is electrically connected to thesource 134 of theactive device 110 and a power line PL. - Generally speaking, a sealing procedure is performed to form an electronic device after the
pixel array 20 is fabricated on thesubstrate 102.FIG. 4 is a diagram of an electronic device according to an embodiment of the present invention. Referring toFIG. 4 , theelectronic device 10 includes apixel array 20 including a plurality of thepixel structure 100 illustrated inFIG. 1 andFIG. 2 , asealant 30, and acover 32. In theelectronic device 10 of the present embodiment, thesealant 30 may be an ultraviolet curing adhesive, and thecover 32 may be a glass cover, a plastic cover, or a cover in other transparent material. In the present embodiment, since thepixel structure 100 has the light-emittingmaterial layer 164, theelectronic device 10 having thepixel structure 100 may be an electroluminescence apparatus. However, as described above, the pixel structure in the present invention may also come without the light-emitting material layer, so that the pixel structure may also be applied to other types of electronic devices. Additionally, in another embodiment, as shown inFIG. 5 , apassivation film 40 may also be formed on thepixel array 20 illustrated inFIG. 3 , so as to form anelectronic device 10 a. - In the embodiment described above, deterioration of device characteristics (for example, increase of an off current and shifting of a threshold voltage, etc) when ultraviolet light is irradiated on the MOS layer is prevented by forming a film layer including a transparent photocatalytic material on the MOS layer. Accordingly, the pixel structure, a pixel array having such pixel structures, and an electronic device having such pixel structures can all have good device characteristics.
- The method of fabricating the pixel structure in the present invention will be described herein. The method of fabricating the pixel structure in
FIG. 1 is similar to that of fabricating the pixel structure inFIG. 2 , and the major difference between the two methods is that no etch stop layer is formed in the method of fabricating the pixel structure inFIG. 1 . Below, the method of fabricating the pixel structure inFIG. 2 will be described as an example, and the method of fabricating the pixel structure inFIG. 1 will not be described. -
FIGS. 6A-6E are cross-sectional diagrams illustrating a method of fabricating the pixel structure inFIG. 2 . Referring toFIG. 6A , first, agate 112 is formed on asubstrate 102. Then, aninsulation layer 120 is formed on thegate 112. Thesubstrate 102 may be a rigid substrate (for example, a glass substrate) or a flexible substrate (for example, a plastic substrate). Thegate 112 may be made of a metal material and formed by physical vapor deposition (PVD). Next, aninsulation layer 120 is formed on thegate 112. Theinsulation layer 120 may be made of silicon nitride or silicon oxide. - Referring to
FIG. 6B , next, aMOS layer 130 is formed on theinsulation layer 120 above thegate 112. TheMOS layer 130 may be made of IGZO. After that, anetch stop layer 132 is formed on theMOS layer 130. Then, asource 134 and adrain 136 are formed on theMOS layer 130. Thesource 134 and thedrain 136 may be made of a metal material and formed by PVD. - Referring to
FIG. 6C , thereafter, a first passivation material layer (not shown) is formed on thesource 134 and thedrain 136, and theMOS layer 130 is covered. Next, the first passivation material layer is patterned to form afirst passivation layer 140 having acontact window opening 142, wherein thecontact window opening 142 may expose thesource 134. After that, afirst electrode layer 162 is formed, and thefirst electrode layer 162 is filled in thecontact window opening 142 to be electrically connected with thesource 134. Thefirst electrode layer 162 may be a metal electrode layer or a transparent conductive layer. - Referring to
FIG. 6D , next, a second passivation material layer (not shown) is formed on thefirst passivation layer 140, and thefirst electrode layer 162 is covered. After that, the second passivation material layer is patterned to form asecond passivation layer 150 having anopening 152, wherein theopening 152 exposes thefirst electrode layer 162. - In the present embodiment, at least one of the
etch stop layer 132, thefirst passivation layer 140, and thesecond passivation layer 150 includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks an ultraviolet light with a wavelength of about 170 to about 350 nm from reaching theMOS layer 130. The transparent photocatalytic material includes insulating metal oxide or metal oxide nanoparticles, wherein the insulating metal oxide may be TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, or ZnS, and the metal oxide nanoparticles may be TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, or ZnS nanoparticles. Namely, a film layer including the transparent photocatalytic material may be insulating metal oxide or an insulating material containing metal oxide nanoparticles. - Referring to
FIG. 6E , thereafter, an ultraviolet cleaning procedure UV1 is performed on the surface of thefirst electrode layer 162 to remove contaminant on the surface. In the present embodiment, the ultraviolet cleaning procedure UV1 includes supplying ozone and irradiating with an ultraviolet light, wherein the wavelength of the ultraviolet light is about 172 nm. However, the wavelength of the ultraviolet light is not limited thereto, and which can be changed by a designer according to the actual requirement. It should be noted that because at least one of theetch stop layer 132, thefirst passivation layer 140, and thesecond passivation layer 150 includes a transparent photocatalytic material, the ultraviolet light used during the ultraviolet cleaning procedure UV1 is prevented from irradiating theMOS layer 130. - Referring to
FIG. 6F , a light-emittingmaterial layer 164 is formed on thefirst electrode layer 162 and asecond electrode layer 166 is formed on the light-emittingmaterial layer 164. By now, the fabrication of thepixel structure 100 is completed. The light-emittingmaterial layer 164 may be an organic light emitting layer or an inorganic light emitting layer, and which may be filled in theopening 152 of thesecond passivation layer 150. Thesecond electrode layer 166 may be a metal electrode layer or a transparent conductive layer. Thesecond electrode layer 166 covers the light-emittingmaterial layer 164 and is extended onto the surface of thesecond passivation layer 150. - Generally speaking, a sealing procedure is further performed to complete the fabrication of the electronic device after a plurality of
pixel structures 100 is formed on thesubstrate 102 through the process described above. Below, the process of fabricating the electronic device will be described with reference toFIGS. 7A-7C . -
FIGS. 7A-7C are cross-sectional diagrams illustrating a method of fabricating an electronic device. Referring toFIG. 7A , first, a plurality ofpixel structures 100 is formed on asubstrate 102 through the process illustrated inFIGS. 6A-6F , so as to form apixel array 20. As illustrated inFIG. 3 and described above, thepixel array 20 includes a plurality ofpixel structures 100 and capacitors CS, active devices T, data lines DL, scan lines SL, and power lines PL. Since the techniques of fabricating the capacitors CS, the active devices T, the data lines DL, the scan lines SL, and the power lines PL are well known to those having ordinary knowledge in the art therefore will not be described herein. - Referring to
FIG. 7B , then, asealant 30 is formed on the surface of thesubstrate 102. In the present embodiment, thesealant 30 may be an ultraviolet curing adhesive. - Referring to
FIG. 7C , next, acover 32 is formed on thesubstrate 102, wherein thecover 32 shelters the pixel structures (i.e., the pixel array 20) and is in contact with thesealant 30. Thecover 32 may be a glass cover, a plastic cover, or a cover of other transparent material. - Thereafter, an ultraviolet curing procedure UV2 is performed to cure the
sealant 30, so as to form theelectronic device 10. In the present embodiment, the ultraviolet light used in the ultraviolet curing procedure UV2 has a wavelength of about 313 nm. However, the wavelength of the ultraviolet light is not limited thereto, and which can be changed by a designer according to the actual requirement. It should be noted that because at least one of theetch stop layer 132, thefirst passivation layer 140, and thesecond passivation layer 150 in thepixel structure 100 includes a transparent photocatalytic material, the ultraviolet light used during the ultraviolet curing procedure UV2 is prevented from irradiating theMOS layer 130. - In the present embodiment, the ultraviolet light used in the ultraviolet cleaning procedure, the ultraviolet curing procedure, or other procedures is prevented from irradiating the MOS layer by forming a film layer including a transparent photocatalytic material on the MOS layer. Accordingly, deterioration of device characteristics (for example, increase of an off current and shifting of a threshold voltage, etc) caused by the irradiation of the ultraviolet light on the MOS layer is prevented. Thus, the pixel structure and the electronic device having such pixel structures can have good device characteristics.
- As described above, in the present invention, a film layer including a transparent photocatalytic material is formed on a MOS layer so that the MOS layer is protected from the irradiation of ultraviolet light. Thereby, the pixel structure is prevented from deteriorating under the irradiation of the ultraviolet light, and accordingly the pixel structure and an electronic device having the same can have good device characteristics.
- In addition, in the present invention, ultraviolet light is blocked and accordingly the MOS layer is protected by changing the material of a film layer, such as an etch stop layer or a passivation layer. Namely, according to the present invention, no additional structure is to be formed in the pixel structure. Thus, the pixel structure in the present invention can be applied to an existing pixel structure layout and can be fabricated by using existing pixel structure fabricating process and machine. Thereby, the fabricating cost of the pixel structure in the present invention is not increased.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (22)
1. A pixel structure, comprising:
a substrate;
a gate, disposed on the substrate;
an insulation layer, covering the gate;
a metal oxide semiconductor (MOS) layer, disposed on the insulation layer above the gate;
a source and a drain, disposed on the MOS layer;
at least one film layer, covering the MOS layer, wherein the film layer comprises a photocatalytic material, and the photocatalytic material blocks a ultraviolet light from reaching the MOS layer; and
a first electrode layer, electrically connected to the source or the drain.
2. The pixel structure according to claim 1 , wherein the film layer comprises a first passivation layer, the first passivation layer covers the source and the drain, the first electrode layer is disposed on the first passivation layer, and the first passivation layer comprises the photocatalytic material.
3. The pixel structure according to claim 1 , wherein the film layer comprises:
a first passivation layer, covering the source and the drain; and
a second passivation layer, disposed on the first passivation layer, and exposing the first electrode layer,
wherein at least one of the first passivation layer and the second passivation layer comprises the photocatalytic material.
4. The pixel structure according to claim 1 , wherein the film layer comprises:
an etch stop layer, disposed on a surface of the MOS layer;
a first passivation layer, covering the source and the drain and the etch stop layer; and
a second passivation layer, disposed on the first passivation layer, and exposing the first electrode layer,
wherein at least one of the etch stop layer, the first passivation layer, and the second passivation layer comprises the photocatalytic material.
5. The pixel structure according to claim 1 , wherein the photocatalytic material comprises insulating metal oxide or metal oxide nanoparticles.
6. The pixel structure according to claim 5 , wherein the insulating metal oxide comprises one or a combination of TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, and ZnS.
7. The pixel structure according to claim 5 , wherein the metal oxide nanoparticles comprises one or a combination of TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, and ZnS nanoparticles.
8. The pixel structure according to claim 1 further comprising;
a light-emitting material layer, disposed on the first electrode layer; and
a second electrode layer, disposed on the light-emitting material layer.
9. The pixel structure according to claim 1 , wherein the photocatalytic material blocks light with a wavelength of about 170 to about 350 nm.
10. A method of fabricating a pixel structure, comprising:
forming a gate on a substrate;
forming an insulation layer on the gate;
forming a MOS layer on the insulation layer above the gate;
forming a source and a drain on the MOS layer;
forming at least one film layer on the source and the drain, and covering the MOS layer, wherein the film layer comprises a photocatalytic material, and the photocatalytic material blocks an ultraviolet light from reaching the MOS layer; and
forming a first electrode layer, electrically connected to the source or the drain.
11. The fabricating method according to claim 10 , wherein the photocatalytic material blocks light with a wavelength of about 170 to about 350 nm.
12. The fabricating method according to claim 10 further comprising performing an ultraviolet cleaning procedure on a surface of the first electrode layer.
13. The fabricating method according to claim 12 , wherein the ultraviolet cleaning procedure comprises supplying ozone and irradiating with an ultraviolet light, and a wavelength of the ultraviolet light is about 172 nm.
14. The fabricating method according to claim 10 , wherein the step of forming the film layer comprises:
forming a first passivation layer on the source and the drain, and covering the MOS layer, wherein the first passivation layer comprises the photocatalytic material; and
patterning the first passivation layer to form a contact window opening in the first passivation layer to expose the source or the drain, wherein the first electrode layer is filled in the contact window opening to be electrically connected to the source or the drain.
15. The fabricating method according to claim 10 , wherein the step of forming the film layer comprises:
forming a first passivation layer on the source and the drain, and covering the MOS layer;
patterning the first passivation layer to form a contact window opening in the first passivation layer to expose the source or the drain, wherein the first electrode layer is filled in the contact window opening to be electrically connected to the source or the drain;
forming a second passivation layer on the first passivation layer, and covering the first electrode layer; and
patterning the second passivation layer to expose the first electrode layer,
wherein at least one of the first passivation layer and the second passivation layer comprises the photocatalytic material.
16. The fabricating method according to claim 10 , wherein the step of forming the film layer comprises:
forming an etch stop layer on a surface of the MOS layer;
forming a first passivation layer on the source and the drain, and covering the MOS layer;
patterning the first passivation layer to form a contact window opening in the first passivation layer to expose the source or the drain, wherein the first electrode layer is filled in the contact window opening to be electrically connected to the source or the drain;
forming a second passivation layer on the first passivation layer, and covering the first electrode layer; and
patterning the second passivation layer to expose the first electrode layer,
wherein at least one of the etch stop layer, the first passivation layer, and the second passivation layer comprises the photocatalytic material.
17. The fabricating method according to claim 10 , wherein the photocatalytic material comprises insulating metal oxide or metal oxide nanoparticles.
18. The fabricating method according to claim 17 , wherein the insulating metal oxide comprises one or a combination of TiOx, TiSiOx, ZnOx, SnOx, ZrOx, CdS, and ZnS.
19. The fabricating method according to claim 17 , wherein the metal oxide nanoparticles comprises one or a combination of TiOx nanoparticles, TiSiOx nanoparticles, ZnOx nanoparticles, SnOx nanoparticles, ZrOx nanoparticles, CdS nanoparticles, and ZnS nanoparticles.
20. The fabricating method according to claim 10 further comprising:
forming a light-emitting material layer on the first electrode layer; and
forming a second electrode layer on the light-emitting material layer.
21. A method of fabricating an electronic device, comprising:
forming a plurality of pixel structures on a substrate, wherein each of the pixel structures is fabricated through the fabricating method in claim 10 ;
forming a sealant on a surface of the substrate;
forming a cover on the substrate, wherein the cover shelters the pixel structures and is in contact with the sealant; and
performing an ultraviolet curing procedure to cure the sealant.
22. The fabricating method according to claim 21 , wherein a wavelength of an ultraviolet light used in the ultraviolet curing procedure is about 313 nm.
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Also Published As
Publication number | Publication date |
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TW201128766A (en) | 2011-08-16 |
TWI402968B (en) | 2013-07-21 |
US20130026472A1 (en) | 2013-01-31 |
US9196740B2 (en) | 2015-11-24 |
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