US20110156113A1 - Back side illumination image sensor reduced in size and method for manufacturing the same - Google Patents
Back side illumination image sensor reduced in size and method for manufacturing the same Download PDFInfo
- Publication number
- US20110156113A1 US20110156113A1 US12/976,851 US97685110A US2011156113A1 US 20110156113 A1 US20110156113 A1 US 20110156113A1 US 97685110 A US97685110 A US 97685110A US 2011156113 A1 US2011156113 A1 US 2011156113A1
- Authority
- US
- United States
- Prior art keywords
- back side
- image sensor
- capacitor
- semiconductor substrate
- illumination image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000003990 capacitor Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000011229 interlayer Substances 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
Definitions
- the present invention relates to an image sensor and a method for manufacturing the same, and more particularly to a back side illumination image sensor reduced in chip size, which has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor where light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor.
- an image sensor is a semiconductor device which converts optical image signals into electrical signals.
- a CCD includes respective metal-oxide semiconductor (MOS) capacitors that are very close to each other for storing and transferring electric charge carriers.
- MOS metal-oxide semiconductor
- a CMOS image sensor has adapted a switching scheme of making MOS transistors as many as pixels with a CMOS technology, which uses a control circuit and a signal-processing circuit as peripheral circuits, and of detecting outputs in turn with the MOS transistors.
- FIG. 1 is a view schematically illustrating the configuration of a conventional CMOS image sensor
- FIG. 2 is a cross-sectional view schematically illustrating the configuration of the conventional CMOS image sensor.
- the conventional CMOS image sensor 100 includes a pixel region 120 , a peripheral circuit region 130 , and a capacitor region 140 .
- the pixel region 120 contains photodiodes for receiving light and generating photocharge, and transfer transistors for transferring photocharge to sensing nodes of pixels.
- the peripheral circuit region 130 converts sensed light into data via electrical signals.
- pixels having photodiodes PD are formed beneath the surface of a semiconductor substrate 110 ; and a multi-layered insulating layer and a multi-layered metal wiring layer M 1 and M 2 , together with transfer transistors Tx, are formed on top of the semiconductor substrate 110 ; and light is illuminated from the front side of the semiconductor substrate 110 (Front Side Illumination).
- the conventional front side illumination image sensor collects optical signals from the front side of a substrate (i.e. from the top of photodiodes), it is impossible to form metal wiring layers, which may obstruct the incidence of light, in the vertical popper portion of the photodiodes. Therefore, except for a metal wiring layer formed within a region which does not obstructs light incident to the photodiodes, the other metal wirings and capacitors are formed in the outside of the pixel region.
- the conventional CMOS image sensor requires a separate area for forming capacitors in the outside of the pixel region, thereby increasing the size of a unit pixel, so that it is difficult to reduce the chip size.
- an object of the present invention is to provide a back side illumination image sensor reduced in chip size, which has a capacitor region formed in an upper portion of a pixel region, in which photodiodes are formed, in the back side illumination image sensor where light is illuminated from the back side of a substrate, and a method for manufacturing the back side illumination image sensor.
- a back side illumination image sensor reduced in chip size, the back side illumination image sensor receiving light illuminated from a back side of a semiconductor substrate wherein a pixel region and a peripheral circuit region are formed, the pixel region comprising: a photodiode formed beneath a surface of a front side of the semiconductor substrate, and configured to receive light illuminated from the back side of the semiconductor substrate and to generate photocharge; a transfer transistor configured to transfer the photocharge generated by the photodiode; an interlayer insulating layer formed above the front side of the semiconductor substrate, in which the photodiode is formed; at least one metal wiring layer formed in the interlayer insulating layer, and configured to electrically connect the photodiode and the peripheral circuit region; and a capacitor region formed above an uppermost metal wiring layer of the at least one metal wiring layer.
- a method for manufacturing a back side illumination image sensor reduced in chip size comprising: a first step of distinguishing a pixel region and a peripheral circuit region in a semiconductor substrate; a second step of forming a photodiode, which receives light illuminated from a back side of the semiconductor substrate and generates photocharge, beneath a surface of a front side of the semiconductor substrate in the pixel region, and forming a transfer transistor to transfer the photocharge generated by the photodiode; a third step of forming an interlayer insulating layer above the front side of the semiconductor substrate, in which the photodiode is formed; a fourth step of forming at least one metal wiring layer, which electrically connects the photodiode and the peripheral circuit region, in the interlayer insulating layer; and a fifth step of forming a capacitor above an uppermost metal wiring layer of the at least one metal wiring layer.
- FIG. 1 is a view schematically illustrating the configuration of a conventional CMOS image sensor
- FIG. 2 is a cross-sectional view schematically illustrating the configuration of the conventional CMOS image sensor
- FIG. 3 is a view schematically illustrating the configuration of a back side illumination image sensor reduced in chip size according to an embodiment of the present invention
- FIG. 4 is a cross-sectional view schematically illustrating the configuration of the back side illumination image sensor reduced in chip size according to an embodiment of the present invention.
- FIG. 5 is a flowchart explaining a method for manufacturing a back side illumination image sensor reduced in chip size according to an embodiment of the present invention.
- FIG. 3 is a view schematically illustrating the configuration of a back side illumination image sensor reduced in chip size according to an embodiment of the present invention
- FIG. 4 is a cross-sectional view schematically illustrating the configuration of the back side illumination image sensor reduced in chip size according to an embodiment of the present invention.
- the back side illumination image sensor 300 reduced in chip size includes a pixel region 320 and a peripheral circuit region 330 .
- light is illuminated from a back side of a semiconductor substrate 310 , and a capacitor region 340 is formed on top of the pixel region 320 .
- the pixel region 320 includes photodiodes PD, transfer transistors Tx, an interlayer insulating layer 350 , a metal wiring layer M 1 and M 2 , and the capacitor region 340 .
- the photodiodes PD are formed beneath the surface of the front side of the semiconductor substrate 310 , and receive light from a back side of the semiconductor substrate 310 and generate photocharge. Meanwhile, the transfer transistors Tx transfer photocharge generated by the photodiodes PD.
- the interlayer insulating layer 350 is formed on the front side of the semiconductor substrate 310 , beneath which the photodiodes PD have been formed, and is provided therein with at least one metal wiring layer M 1 and M 2 which electrically connects the photodiodes and the peripheral circuit region 330 .
- the capacitors may be formed in the entire or a part of a vertical upper portion of the pixel region 320 .
- capacitors can be formed in a vertical upper portion of a pixel region, in which photodiodes are formed, so that an area required for a peripheral circuit region is reduced, thereby reducing the overall chip size.
- FIG. 5 is a flowchart explaining a method for manufacturing a back side illumination image sensor reduced in chip size according to an embodiment of the present invention.
- the method for manufacturing a back side illumination image sensor reduced in chip size includes five steps from a first step S 100 to a fifth step S 500 .
- the first step S 100 is a process of distinguishing between a pixel region and a peripheral circuit region in a semiconductor substrate. This step is belonging to the conventional technology, so a detailed description thereof will be omitted.
- photodiodes which receive light illuminated from a back side of the semiconductor substrate and generate photocharge, are formed beneath the surface of a front side of the semiconductor substrate within the pixel region, and also transfer transistors for transferring the photocharge generated by the photodiodes are formed.
- an interlayer insulating layer is formed on the photodiodes and transfer transistors, which have been formed in the pixel region.
- at least one metal wiring layer M 1 and M 2 which electrically connects the photodiodes and the peripheral circuit region is formed in the interlayer insulating layer.
- a capacitor region is formed above an uppermost metal wiring layer of the metal wiring layer.
- at least one capacitor is formed in the capacitor region.
- the capacitor may be formed the entire or a part of a vertical upper portion of the pixel region by means of a metal wiring process.
- the capacitor is formed as a metal-insulator-metal (MIM) type capacitor by forming a third metal layer M 3 and a fourth metal layer M 4 through the use of a metal process, and forming an insulating layer “a” between the metal layers M 3 and M 4 .
- the capacitor may be formed as a poly-insulator-poly (PIP) type capacitor.
- a sixth step of forming a color filter on the back side of the semiconductor substrate it is preferred to further form a sixth step of forming a color filter on the back side of the semiconductor substrate, and a seventh step of forming a micro-lens on the color filter.
- the present invention provides a back side illumination image sensor reduced in chip size, in which a capacitor is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
- 1. Field of the Invention
- The present invention relates to an image sensor and a method for manufacturing the same, and more particularly to a back side illumination image sensor reduced in chip size, which has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor where light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor.
- 2. Description of the Related Art
- In general, an image sensor is a semiconductor device which converts optical image signals into electrical signals. A CCD includes respective metal-oxide semiconductor (MOS) capacitors that are very close to each other for storing and transferring electric charge carriers. A CMOS image sensor has adapted a switching scheme of making MOS transistors as many as pixels with a CMOS technology, which uses a control circuit and a signal-processing circuit as peripheral circuits, and of detecting outputs in turn with the MOS transistors.
-
FIG. 1 is a view schematically illustrating the configuration of a conventional CMOS image sensor, andFIG. 2 is a cross-sectional view schematically illustrating the configuration of the conventional CMOS image sensor. - As shown in
FIGS. 1 and 2 , the conventionalCMOS image sensor 100 includes apixel region 120, aperipheral circuit region 130, and acapacitor region 140. Thepixel region 120 contains photodiodes for receiving light and generating photocharge, and transfer transistors for transferring photocharge to sensing nodes of pixels. Theperipheral circuit region 130 converts sensed light into data via electrical signals. - In the
pixel region 120, pixels having photodiodes PD are formed beneath the surface of asemiconductor substrate 110; and a multi-layered insulating layer and a multi-layered metal wiring layer M1 and M2, together with transfer transistors Tx, are formed on top of thesemiconductor substrate 110; and light is illuminated from the front side of the semiconductor substrate 110 (Front Side Illumination). - That is, since the conventional front side illumination image sensor collects optical signals from the front side of a substrate (i.e. from the top of photodiodes), it is impossible to form metal wiring layers, which may obstruct the incidence of light, in the vertical popper portion of the photodiodes. Therefore, except for a metal wiring layer formed within a region which does not obstructs light incident to the photodiodes, the other metal wirings and capacitors are formed in the outside of the pixel region.
- As described above, the conventional CMOS image sensor requires a separate area for forming capacitors in the outside of the pixel region, thereby increasing the size of a unit pixel, so that it is difficult to reduce the chip size.
- Accordingly, the present invention has been made in an effort to solve the problems occurring in the related art, and an object of the present invention is to provide a back side illumination image sensor reduced in chip size, which has a capacitor region formed in an upper portion of a pixel region, in which photodiodes are formed, in the back side illumination image sensor where light is illuminated from the back side of a substrate, and a method for manufacturing the back side illumination image sensor.
- In order to achieve the above object, according to one aspect of the present invention, there is provided a back side illumination image sensor reduced in chip size, the back side illumination image sensor receiving light illuminated from a back side of a semiconductor substrate wherein a pixel region and a peripheral circuit region are formed, the pixel region comprising: a photodiode formed beneath a surface of a front side of the semiconductor substrate, and configured to receive light illuminated from the back side of the semiconductor substrate and to generate photocharge; a transfer transistor configured to transfer the photocharge generated by the photodiode; an interlayer insulating layer formed above the front side of the semiconductor substrate, in which the photodiode is formed; at least one metal wiring layer formed in the interlayer insulating layer, and configured to electrically connect the photodiode and the peripheral circuit region; and a capacitor region formed above an uppermost metal wiring layer of the at least one metal wiring layer.
- According to another one aspect of the present invention, there is provided a method for manufacturing a back side illumination image sensor reduced in chip size, the method comprising: a first step of distinguishing a pixel region and a peripheral circuit region in a semiconductor substrate; a second step of forming a photodiode, which receives light illuminated from a back side of the semiconductor substrate and generates photocharge, beneath a surface of a front side of the semiconductor substrate in the pixel region, and forming a transfer transistor to transfer the photocharge generated by the photodiode; a third step of forming an interlayer insulating layer above the front side of the semiconductor substrate, in which the photodiode is formed; a fourth step of forming at least one metal wiring layer, which electrically connects the photodiode and the peripheral circuit region, in the interlayer insulating layer; and a fifth step of forming a capacitor above an uppermost metal wiring layer of the at least one metal wiring layer.
- The above objects, and other features and advantages of the present invention will become more apparent after a reading of the following detailed description taken in conjunction with the drawings, in which:
-
FIG. 1 is a view schematically illustrating the configuration of a conventional CMOS image sensor; -
FIG. 2 is a cross-sectional view schematically illustrating the configuration of the conventional CMOS image sensor; -
FIG. 3 is a view schematically illustrating the configuration of a back side illumination image sensor reduced in chip size according to an embodiment of the present invention; -
FIG. 4 is a cross-sectional view schematically illustrating the configuration of the back side illumination image sensor reduced in chip size according to an embodiment of the present invention; and -
FIG. 5 is a flowchart explaining a method for manufacturing a back side illumination image sensor reduced in chip size according to an embodiment of the present invention. - Reference will now be made in greater detail to a preferred embodiment of the invention, an example of which is illustrated in the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings and the description to refer to the same or like parts.
-
FIG. 3 is a view schematically illustrating the configuration of a back side illumination image sensor reduced in chip size according to an embodiment of the present invention, andFIG. 4 is a cross-sectional view schematically illustrating the configuration of the back side illumination image sensor reduced in chip size according to an embodiment of the present invention. - As shown in
FIGS. 3 and 4 , the back sideillumination image sensor 300 reduced in chip size according to an embodiment of the present invention includes apixel region 320 and aperipheral circuit region 330. In addition, light is illuminated from a back side of asemiconductor substrate 310, and acapacitor region 340 is formed on top of thepixel region 320. - In this case, the
pixel region 320 includes photodiodes PD, transfer transistors Tx, aninterlayer insulating layer 350, a metal wiring layer M1 and M2, and thecapacitor region 340. - The photodiodes PD are formed beneath the surface of the front side of the
semiconductor substrate 310, and receive light from a back side of thesemiconductor substrate 310 and generate photocharge. Meanwhile, the transfer transistors Tx transfer photocharge generated by the photodiodes PD. - The
interlayer insulating layer 350 is formed on the front side of thesemiconductor substrate 310, beneath which the photodiodes PD have been formed, and is provided therein with at least one metal wiring layer M1 and M2 which electrically connects the photodiodes and theperipheral circuit region 330. - Also, the
capacitor region 340 including a plurality of capacitors, which contain capacitors M3 and M4, is formed above an uppermost metal wiring layer M2 of the metal wiring layer M1 and M2. - In this case, the capacitors may be formed in the entire or a part of a vertical upper portion of the
pixel region 320. - As described above, according to the back side illumination image sensor reduced in chip size based on an embodiment of the present invention, since light is incident from the back side of a substrate, capacitors can be formed in a vertical upper portion of a pixel region, in which photodiodes are formed, so that an area required for a peripheral circuit region is reduced, thereby reducing the overall chip size.
-
FIG. 5 is a flowchart explaining a method for manufacturing a back side illumination image sensor reduced in chip size according to an embodiment of the present invention. - As shown in
FIG. 5 , the method for manufacturing a back side illumination image sensor reduced in chip size includes five steps from a first step S100 to a fifth step S500. - The first step S100 is a process of distinguishing between a pixel region and a peripheral circuit region in a semiconductor substrate. This step is belonging to the conventional technology, so a detailed description thereof will be omitted.
- In the second step S200, photodiodes, which receive light illuminated from a back side of the semiconductor substrate and generate photocharge, are formed beneath the surface of a front side of the semiconductor substrate within the pixel region, and also transfer transistors for transferring the photocharge generated by the photodiodes are formed.
- In the third step S300, an interlayer insulating layer is formed on the photodiodes and transfer transistors, which have been formed in the pixel region. In the fourth step S400, at least one metal wiring layer M1 and M2 which electrically connects the photodiodes and the peripheral circuit region is formed in the interlayer insulating layer.
- In the fifth step S500, a capacitor region is formed above an uppermost metal wiring layer of the metal wiring layer. In this case, at least one capacitor is formed in the capacitor region. The capacitor may be formed the entire or a part of a vertical upper portion of the pixel region by means of a metal wiring process.
- It is preferred that the capacitor is formed as a metal-insulator-metal (MIM) type capacitor by forming a third metal layer M3 and a fourth metal layer M4 through the use of a metal process, and forming an insulating layer “a” between the metal layers M3 and M4. In case of necessity, the capacitor may be formed as a poly-insulator-poly (PIP) type capacitor.
- Meanwhile, it is preferred to further form a sixth step of forming a color filter on the back side of the semiconductor substrate, and a seventh step of forming a micro-lens on the color filter.
- As is apparent from the above description, the present invention provides a back side illumination image sensor reduced in chip size, in which a capacitor is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.
- Although a preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and the spirit of the invention as disclosed in the accompanying claims.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/563,655 US8420429B2 (en) | 2009-12-29 | 2012-07-31 | Back side illumination image sensor reduced in size and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0132790 | 2009-12-29 | ||
KR1020090132790A KR101062333B1 (en) | 2009-12-29 | 2009-12-29 | Backlight image sensor with reduced chip size and manufacturing method thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/563,655 Division US8420429B2 (en) | 2009-12-29 | 2012-07-31 | Back side illumination image sensor reduced in size and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20110156113A1 true US20110156113A1 (en) | 2011-06-30 |
US8421134B2 US8421134B2 (en) | 2013-04-16 |
Family
ID=44186368
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/976,851 Active 2030-12-29 US8421134B2 (en) | 2009-12-29 | 2010-12-22 | Back side illumination image sensor reduced in size and method for manufacturing the same |
US13/563,655 Active US8420429B2 (en) | 2009-12-29 | 2012-07-31 | Back side illumination image sensor reduced in size and method for manufacturing the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/563,655 Active US8420429B2 (en) | 2009-12-29 | 2012-07-31 | Back side illumination image sensor reduced in size and method for manufacturing the same |
Country Status (3)
Country | Link |
---|---|
US (2) | US8421134B2 (en) |
KR (1) | KR101062333B1 (en) |
CN (1) | CN102130142B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120193691A1 (en) * | 2011-01-31 | 2012-08-02 | Chih-Wei Hsiung | Back-side illumination image sensor |
US8933530B2 (en) | 2012-03-20 | 2015-01-13 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101334213B1 (en) | 2013-09-02 | 2013-11-29 | (주)실리콘화일 | Stack chip package image sensor |
US9565375B1 (en) * | 2015-11-03 | 2017-02-07 | Stmicroelectronics (Grenoble 2) Sas | Pixel and an array of pixels |
JP7362198B2 (en) | 2018-07-18 | 2023-10-17 | ソニーセミコンダクタソリューションズ株式会社 | Photodetector, ranging module, and electronic equipment |
KR102591627B1 (en) | 2018-08-17 | 2023-10-20 | 삼성전자주식회사 | Image sensor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090201400A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated image sensor with global shutter and storage capacitor |
US20100230729A1 (en) * | 2009-03-10 | 2010-09-16 | International Business Machines Corporation | Pixel sensor cell including light shield |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217392A (en) | 2001-01-12 | 2002-08-02 | Canon Inc | Photoelectric conversion device and radiation imaging device using the same |
JP2007165737A (en) | 2005-12-16 | 2007-06-28 | Konica Minolta Medical & Graphic Inc | Solid-state imaging apparatus |
JP2008053333A (en) | 2006-08-23 | 2008-03-06 | Fujifilm Corp | Solid-state imaging device |
KR100741914B1 (en) * | 2006-09-28 | 2007-07-24 | 동부일렉트로닉스 주식회사 | Manufacturing method of cmos image sensor |
KR100849825B1 (en) * | 2007-03-14 | 2008-07-31 | 동부일렉트로닉스 주식회사 | Image sensor and method for manufacturing thereof |
-
2009
- 2009-12-29 KR KR1020090132790A patent/KR101062333B1/en active IP Right Grant
-
2010
- 2010-12-22 US US12/976,851 patent/US8421134B2/en active Active
- 2010-12-28 CN CN2010106092776A patent/CN102130142B/en active Active
-
2012
- 2012-07-31 US US13/563,655 patent/US8420429B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090201400A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated image sensor with global shutter and storage capacitor |
US20100230729A1 (en) * | 2009-03-10 | 2010-09-16 | International Business Machines Corporation | Pixel sensor cell including light shield |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120193691A1 (en) * | 2011-01-31 | 2012-08-02 | Chih-Wei Hsiung | Back-side illumination image sensor |
US8431975B2 (en) * | 2011-01-31 | 2013-04-30 | Himax Imaging, Inc. | Back-side illumination image sensor |
US8933530B2 (en) | 2012-03-20 | 2015-01-13 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
US9455294B2 (en) | 2012-03-20 | 2016-09-27 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US8420429B2 (en) | 2013-04-16 |
CN102130142A (en) | 2011-07-20 |
CN102130142B (en) | 2013-09-25 |
US20120301996A1 (en) | 2012-11-29 |
US8421134B2 (en) | 2013-04-16 |
KR20110076158A (en) | 2011-07-06 |
KR101062333B1 (en) | 2011-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11374049B2 (en) | Semiconductor device, solid-state imaging device and electronic apparatus | |
US10999545B2 (en) | Solid-state image sensor, imaging device, and electronic device | |
KR102550830B1 (en) | Solid-state imaging device, method for manufacturing same, and electronic device | |
US8420429B2 (en) | Back side illumination image sensor reduced in size and method for manufacturing the same | |
US20190181170A1 (en) | Solid state imaging device and electronic apparatus | |
JP2020065072A (en) | Imaging element and imaging apparatus | |
WO2015159766A1 (en) | Solid-state imaging device, method for manufacturing same and electronic device | |
KR102590610B1 (en) | Imaging device and driving method, and electronic device | |
CN101939840A (en) | Backside illuminated imaging sensor with improved infrared sensitivity | |
JP2010206095A (en) | Solid-state imaging device and method for fabricating the same, and electronic apparatus | |
US20090045441A1 (en) | CMOS image sensor package | |
JP2021007176A (en) | Solid-state image pickup device and electronic apparatus | |
WO2024043069A1 (en) | Solid-state imaging device | |
KR20100063392A (en) | Image sensor and image sensing system including of the same | |
JP2010040650A (en) | Solid state imaging apparatus | |
KR20130045526A (en) | Back side illumination image sensor reduced in size and method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SILICONFILE TECHNOLOGIES INC., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:JEON, IN GYUN;OH, SE JUNG;AHN, HEUI GYUN;AND OTHERS;REEL/FRAME:025550/0188 Effective date: 20101213 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: SK HYNIX INC., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SILICONFILE TECHNOLOGIES INC.;REEL/FRAME:041023/0058 Effective date: 20161222 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |