US20110133189A1 - NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING - Google Patents
NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING Download PDFInfo
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- 239000002019 doping agent Substances 0.000 claims abstract description 17
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- 238000004519 manufacturing process Methods 0.000 claims description 7
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- 238000005280 amorphization Methods 0.000 claims description 5
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- 229910021332 silicide Inorganic materials 0.000 abstract description 6
- 125000006850 spacer group Chemical group 0.000 description 11
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- 229920002120 photoresistant polymer Polymers 0.000 description 3
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- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/66409—Unipolar field-effect transistors
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Abstract
Description
- The present disclosure relates to semiconductor devices with N-type in situ doped transistors. The present disclosure is particularly applicable to semiconductors for 22 nanometer (nm) node devices and beyond.
- Due to pitch scaling in each generation, the spacers that define deep source/drain implants have been significantly reduced in thickness. For example, for a 22 nm node CMOS transistor the spacer thickness is less than or equal to 20 nm, whereas for 32 nm node and 45 nm node technologies, the spacer thickness is about 35 nm and about 45 nm, respectively. A small spacer thickness such as less than 20 nm makes the conventional deep source/drain implants no longer viable. This is because the lateral-implant-straggle inherent to the implant process overruns the extension for short channel devices, causing significant short channel degradation. Therefore, an in-situ doped source/drain process has attracted interest for 22 nm node and beyond CMOS transistor.
- An in-situ phosphorus-doped (ISPD) embedded Si:C (eSi:C) source/drain process appears suitable for 22 nm node NMOS transistor to avoid source/drain overrunning the extension, since ISPD eSi:C offers not only doped source/drains, but also tensile channel stress. However, it was found that ISPD eSi:C has several disadvantages. For example, the ISPD eSi:C epitaxial process throughput is unacceptably low, as fewer than two wafers can be processed per hour, whereas at least four wafers per hour is considered to be an acceptable throughput. In addition, the eSi:C fill level is extremely sensitive to device pitch, and multiple pitches may be present on the same wafer. As illustrated in
FIGS. 1A and 1B , respectively, for a single pitch 101 (100 nm) betweengates 103, the source/drain is under-filled (fill height 105) and for a double pitch 107 (200 nm) betweengates 109, the source/drain is overfilled (fill height 111). The epitaxial fill height difference causes significant variation in device parametrics, such as threshold voltage (Vt), capacitance (Cov), Ion, etc. Further, the deposition/etch-back/deposition/etch-back cyclic epitaxial process (the process during epitaxial growth wherein Si:C is periodically etched off where it is unwanted) causes extension silicon and dopant loss. Adverting toFIG. 2 ,spacer edge 201, with which eSi:C/Si recessboundary 203 is formed, andboundary 203 itself are eroded by the etch-back process tospacer edge 205 andboundary 207, respectively. A portion of silicon extension 209 (i.e., the portion betweenrecess boundary 203 and boundary 207) is thus undesirably etched. This extension loss increases the resistance, is not controllable from wafer to wafer and lot to lot, and, therefore, introduces another source of variability, which is undesirable for manufacturing. - Another approach to improve the source/drain for a 22 nm node NMOS transistor is to grow N-type-doped silicon for the NMOS source/drain. Although this approach simplifies the epitaxial process, it fails to provide stress to influence channel mobility. Since the incorporation of arsenic in silicon (less than 1E20 cm-3) is low, in-situ arsenic doped silicon is not suitable as an NMOS source/drain. Although the incorporation of phosphorus in silicon (greater than 5E20 cm-3) is significantly higher than arsenic, an ISPD silicon epitaxial process for nMOS source/drains has other serious issues. For example, the ISPD silicon epitaxial throughput in NMOS transistors is relatively low, for example less than or equal to 3 wafers per hour. In addition, epitaxially deposited ISPD silicon has poor selectivity, i.e., it grows on nitride spacers, thereby causing an undesirable morphology as illustrated in
FIG. 3 . The ISPD silicon grows onspacers 303 and has an irregular shape. The poor morphology causes high Cov and introduces another source of device parametric variations. - A need therefore exists for methodology enabling fabrication of in-situ doped NMOS source/drains with high manufacture throughput, uniform fill level, reduced extension silicon and dopant loss, and improved morphology, and for the resulting device.
- An aspect of the present disclosure is a semiconductor including amorphized N-doped eSiGe:C source/drains.
- Another aspect of the present disclosure is a method of fabricating a semiconductor including amorphized N-doped eSiGe:C source/drains.
- Additional aspects and other features of the present disclosure will be set forth in the description which follows and in part will be apparent to those having ordinary skill in the art upon examination of the following or may be learned from the practice of the present disclosure. The advantages of the present disclosure may be realized and obtained as particularly pointed out in the appended claims.
- According to the present disclosure, some technical effects may be achieved in part by a method comprising: forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate; and amorphizing the eSiGe:C.
- Aspects of the present disclosure include forming an N-type eSiGe:C by epitaxially growing eSiGe:C in source/drain regions of a substrate. Further aspects include doping the epitaxially grown SiGe:C in-situ with phosphorus. Other aspects include forming the eSiGe:C with less than about 0.2 at. % carbon, such as about 0.08 at. % to about 0.15% carbon, e.g., about 0.1 at. % carbon. Additional aspects include amorphizing to relax compressive strain by implanting a dopant, for example, germanium (Ge), Xenon (Xe), or silicon (Si).
- Another aspect of the present disclosure is a semiconductor device comprising: a substrate having source/drain regions; and amorphized N-type doped eSiGe:C in the source/drain regions.
- Aspects include a semiconductor device wherein eSiGe:C is epitaxially grown in source/drain regions of a substrate. Further aspects include a semiconductor device wherein the epitaxially grown eSiGe:C is doped in-situ with phosphorus. Another aspect includes a semiconductor device including N-type eSiGe:C which contains less than about 0.2 at. % carbon, such as about 0.08 at. % to about 0.15% carbon, e.g., about 0.1% carbon. Additional aspects include a semiconductor device wherein the N-type eSiGe:C contains an implanted amorphizing dopant, e.g., Ge, Xe, or Si, to reduce compressive strain.
- A further aspect of the present disclosure is a method of fabricating a CMOS semiconductor device comprising: forming in-situ boron-doped eSiGe in first source/drain regions on a substrate, to form a PMOS transistor; epitaxially growing in-situ phosphorus doped eSiGe:C in second source/drain regions on a substrate to form an NMOS transistor; and implanting an amorphization dopant only in the in-situ phosphorus doped eSiGe:C to neutralize compressive strain.
- Additional aspects and technical effects of the present disclosure will become readily apparent to those skilled in the art from the following detailed description wherein embodiments of the present disclosure are described simply by way of illustration of the best mode contemplated to carry out the present disclosure. As will be realized, the present disclosure is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, all without departing from the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
- The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawing and in which like reference numerals refer to similar elements and in which:
-
FIGS. 1A and 1B schematically illustrate ISPD eSi:C single pitch underfilling and double pitch over filling, respectively; -
FIG. 2 schematically illustrates extension silicon and dopant loss with ISPD eSi:C; -
FIG. 3 schematically illustrates poor morphology with ISPD silicon; -
FIGS. 4 through 12 schematically illustrate sequential steps of a method in accordance with an exemplary embodiment. - In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of exemplary embodiments. It should be apparent, however, that exemplary embodiments may be practiced without these specific details or with an equivalent arrangement. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring exemplary embodiments.
- The present disclosure addresses and solves the doping problem attendant upon forming a 20 nm node NMOS transistor. In accordance with embodiments of the present disclosure, phosphorus doping is performed in-situ, which prevents overrunning the extension and causing short channel degradation. Further, eSiGe:C is employed to avoid the need to etch back after deposition. Consequently, throughput is increased and silicon extension and dopant loss is prevented. In addition since the band gap of eSiGe:C is smaller than Si:C, the silicide to source/drain contact resistance is reduced.
- Methodology in accordance with embodiments of the present disclosure includes forming N-type doped eSiGe:C in source/drain regions of a substrate, and amorphizing the eSiGe:C.
- Still other aspects, features, and technical effects will be readily apparent to those skilled in this art from the following detailed description, wherein preferred embodiments are shown and described, simply by way of illustration of the best mode contemplated. The disclosure is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
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FIGS. 4 through 12 schematically illustrate sequential steps of a method in accordance with an exemplary embodiment. Adverting toFIG. 4 ,gate stack 401, includinggate dielectric 403,metal gate 405, amorphous orpolycrystalline silicon 407, andnitride cap 409, andgate stack 411, includinggate dielectric 413,metal gate 415, amorphous orpolycrystalline silicon 417, andnitride cap 419 are formed onactive silicon portions substrate 425 in a conventional manner. Offset spacers 427 and 429 are formed on each side ofgate stack - As illustrated in
FIG. 5 ,halo implants 501 a andextension implants 501 b dope thetop portion 503 ofsilicon 421 and halo implants 501 c andextension implants 501 d dope thetop portion 505 ofsilicon 423 for NMOS and PMOS respectively. TheNMOS halo implantation 501 a may be boron difluoride (BF2) at an energy of about 10 keV to about 50 keV and at a dosage of about 1e13/cm2 to about 5e13/cm2. TheNMOS extension implantation 501 b may be arsenic at an energy of about 1 keV to about 3 keV and at a dosage of about 1e15/cm2 to about 5e15/cm2. The PMOS halo implantation 501 c may be arsenic at an energy of about 10 keV to about 50 keV and at a dosage of about 1e13/cm2 to about 5e13/cm2. ThePMOS extension implantation 501 d may be BF2 at an energy of about 1 keV to about 3 keV and at a dosage of about 1e15/cm2 to about 4e15/cm2. The implantation is followed by a rapid thermal anneal (RTA) with the temperature in the range of about 800° C. to about 1065° C. - As illustrated in
FIG. 6 , in-situ boron doped eSiGe (B:eSiGe) is epitaxially grown in a conventional manner in recesses formed inactive silicon 423 on each side ofgate stack 411 to form PMOS source/drain regions 601. - Adverting to
FIG. 7 , after the formation of the B:eSiGe source/drain regions 601, a silicon nitride (SiN) layer is deposited over the entire substrate. Then a photoresist material is formed over the SiN layer on the PMOS. The SiN and photoresist are lithographically etched formingSiN layer 701 andphotoresist 703. The SiN layer aroundgate stack 401 is reactive ion etched (RIE) to formspacers 705, as shown inFIG. 7 . - As shown in
FIG. 8 , recesses 801 defined bySiN spacers 705 are formed insilicon 421 by an RIE process. ISPD eSiGe:C is then epitaxially grown inrecesses 801, thereby forming NMOS source/drains 901, as illustrated inFIG. 9 . The carbon concentration may be less than about 0.2 at. %, such as about 0.1 at. % to about 0.2 at. %, e.g. about 0.08 at. % to about 0.15 at. %, i.e., about 0.1 at. %. The phosphorus may be introduced in-situ at a dosage of about 1e19/cm3 to about 6e20/cm3. Although the N-type dopant has been described as phosphorus, arsenic may also be employed. - Adverting to
FIG. 10 , a second resist 1001 is formed over the PMOS transistor so that an amorphization implant dopant may be introduced only into the NMOS transistor. Adopant 1003, for example Ge, Xe, or Si, is implanted into the ISPD eSiGe:C to relax or neutralize the compressive strain intrinsic to eSiGe:C and to prevent channeling. The amorphization dopant may be implanted at an energy of about 10 keV to about 50 keV and at a dosage of about 1e13/cm2 to about 1e14/cm2. - After the amorphization implant, resist 1001 is removed. Another layer of SiN is formed over the entire surface, including both the NMOS and PMOS transistors. As illustrated in
FIG. 11 , the SiN layer is then etched to formSiN spacers 1101. A laser anneal follows the formation ofspacers 1101. - Adverting to
FIG. 12 ,silicide 1201 is formed for both the NMOS and PMOS transistors.Silicide 1201 may be formed in a conventional manner, for example of nickel platinum with about 5 to 10% nickel or of cobalt. Then conventional middle-of-line (MOL) and back-end-of-line (BEOL) processes, such as formation of contacts down tosilicide 1201, proceed to complete the CMOS fabrication. - The embodiments of the present disclosure can achieve several technical effects, including epitaxial process stability and repeatability with the mature epitaxial tooling (since the process for epitaxially growing eSiGe:C for NMOS transistors is the same and uses the same tools as have been used for epitaxially growing eSiGe:C for PMOS transistors), minimal loading effect with different device pitch, improved epitaxial morphology, acceptable wafer throughput, improved source/drain to channel junction for better short channel control, and lower silicide to eSiGe:C contact resistance. The present disclosure enjoys industrial applicability in any of various types of highly integrated semiconductor devices including NMOS transistors.
- In the preceding description, the present disclosure is described with reference to specifically exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the present disclosure, as set forth in the claims. The specification and drawings are, accordingly, to be regarded as illustrative and not as restrictive. It is understood that the present disclosure is capable of using various other combinations and embodiments and is capable of any changes or modifications within the scope of the inventive concept as expressed herein.
Claims (20)
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US20130052783A1 (en) * | 2011-08-24 | 2013-02-28 | Globalfoundries Inc. | Methods of Forming Stressed Silicon-Carbon Areas in an NMOS Transistor |
US20170186776A1 (en) * | 2015-12-28 | 2017-06-29 | Lg Display Co., Ltd. | Active layer, thin-film transistor array substrate comprising the same, and display device comprising the same |
US20180269303A1 (en) * | 2017-03-16 | 2018-09-20 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor structures and fabrication methods thereof |
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