US20110094580A1 - Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index - Google Patents
Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index Download PDFInfo
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- US20110094580A1 US20110094580A1 US12/929,147 US92914711A US2011094580A1 US 20110094580 A1 US20110094580 A1 US 20110094580A1 US 92914711 A US92914711 A US 92914711A US 2011094580 A1 US2011094580 A1 US 2011094580A1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 230000005540 biological transmission Effects 0.000 claims abstract description 23
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 17
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000010955 niobium Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 22
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 13
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 13
- 239000011787 zinc oxide Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910001887 tin oxide Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229910004613 CdTe Inorganic materials 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- XXLJGBGJDROPKW-UHFFFAOYSA-N antimony;oxotin Chemical compound [Sb].[Sn]=O XXLJGBGJDROPKW-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 36
- 239000010936 titanium Substances 0.000 abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 165
- 239000010408 film Substances 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- JRFBNCLFYLUNCE-UHFFFAOYSA-N zinc;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Zn+2] JRFBNCLFYLUNCE-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910007667 ZnOx Inorganic materials 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910006854 SnOx Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- -1 TiO2) Chemical compound 0.000 description 1
- OBOYOXRQUWVUFU-UHFFFAOYSA-N [O-2].[Ti+4].[Nb+5] Chemical compound [O-2].[Ti+4].[Nb+5] OBOYOXRQUWVUFU-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10165—Functional features of the laminated safety glass or glazing
- B32B17/10174—Coatings of a metallic or dielectric material on a constituent layer of glass or polymer
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.
Description
- Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device (especially when positioned adjacent the active semiconductor layer) reduces light reflection due to the high refractive index, and'increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.
- Photovoltaic (PV) devices are known in the art (e.g., see U.S. Pat. Nos. 6,784,361, 6,288,325, 6,613,603 and 6,123,824, the disclosures of which are hereby incorporated herein by reference). Amorphous silicon (a-Si) and CdS/CdTe type photovoltaic devices, for example, each include a front contact or electrode. Typically, the front electrode is made of a transparent conductive oxide (TCO) such as tin oxide or zinc oxide formed on a substrate such as a glass substrate. Accordingly, it will be appreciated that zinc oxide doped with Al (ZnAlOx) is a known TCO material for use as an electrode for a photovoltaic device.
- Unfortunately, transparent conductive ZnAlOx has a relatively low refractive index (n) of around 2.0. A TCO layer having such a low refractive index (n), if provided in certain locations of a PV device, tends to reflect significant amounts of incoming solar energy away from the active semiconductor film of the photovoltaic device. In other words, when located at certain positions, the low refractive index material causes significant amounts of incoming energy to be wasted as it is reflected away from the active layer thereby reducing the efficiency of the photovoltaic device.
- It is apparent from the above that there exists a need in the art for an improved TCO material which, when positioned in certain locations, is capable of reducing reflections of incoming solar energy without blocking transmission thereof, so as to improve efficiency of the photovoltaic device.
- In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional conductive layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of TiOx(:Nb) or TiZnOx(:Al and/or Nb) TCO, in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) (e.g., of at least 2.15, more preferably at least 2.2, even more preferably at least 2.3, and possibly at least 2.4 at 550 nm) and have a higher transparency to solar energy used by the PV device than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device (especially when positioned adjacent and contacting the active semiconductor film of the device) reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving efficiency of the device.
- In certain example embodiments of this invention, the TCO may be sputter-deposited in a non-stoichiometric oxygen deficient form, or may be deposited in any other suitable manner. Sputtering at approximately room temperature may be used for the deposition of the electrode in certain example instances, although other techniques may instead be used in certain instances.
- In certain example embodiments, the electrode of or including TiOx(:Nb) or TiZnOx(:Al and/or Nb) may be used as any suitable electrode in any suitable electronic device, such as a photovoltaic device, a flat-panel display device, and/or an electro-optical device.
- In certain example embodiments of this invention, the TCO (e.g., TiOx(:Nb) or TiZnOx(:Al and/or Nb)) layer or the overall front electrode may have a sheet resistance (Rs) of from about 7-50 ohms/square, more preferably from about 10-25 ohms/square, and most preferably from about 10-15 ohms/square using a reference example non-limiting thickness of from about 1,000 to 2,000 angstroms, although other thicknesses are possible.
- In certain example embodiments of this invention, there is provided a photovoltaic device comprising: a front substrate; a front electrode; a semiconductor film, wherein the front electrode is located between at least the front substrate and the semiconductor film; and wherein the front electrode of the photovoltaic device comprises a first conductive layer and a second conductive layer, wherein the second conductive layer is located between at least the first conductive layer and the semiconductor film, and wherein the second conductive layer comprises titanium zinc oxide doped with aluminum and/or niobium.
- In other example embodiments, there is provided a photovoltaic device comprising: a front glass substrate; a front electrode; a semiconductor film, wherein the front electrode is located between at least the front substrate and the semiconductor film; and wherein the front electrode of the photovoltaic device comprises a first conductive layer and a second conductive layer, wherein the second conductive layer is located between at least the first conductive layer and the semiconductor film, and wherein the second conductive layer comprises titanium oxide doped niobium.
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FIG. 1 is a cross sectional view of an example photovoltaic device according to an example embodiment of this invention. -
FIG. 2 is a cross sectional view of the photovoltaic device according to another example embodiment of this invention. -
FIG. 3 is a cross sectional view of the photovoltaic device according to another example embodiment of this invention. -
FIG. 4 is a percent transmission (T %) versus wavelength (nm) graph illustrating transmission spectra into a hydrogenated a-Si thin film of a photovoltaic device comparing examples of theFIG. 2 embodiment of this invention versus a comparative example (ZnAlOx) where a zinc aluminum oxide TCO was used instead adjacent the semiconductor; this shows that the examples of this invention have increased transmission in at least a substantial part of the approximately 450-700 nm wavelength range and thus increased photovoltaic module output power, compared to the comparative example. The stacks tested inFIG. 4 are shown in the table ofFIG. 6 . -
FIG. 5 is a percent transmission (T %) versus wavelength (nm) graph illustrating transmission spectra into a hydrogenated a-Si thin film of a photovoltaic device comparing examples of theFIG. 3 embodiment of this invention versus a comparative example (TCO) where only a zinc aluminum oxide TCO was used instead adjacent the semiconductor; this shows that the examples of this invention (10 ohm TCO+50 nm TiNbOx) have increased transmission in at least a substantial part of the approximately 450-700 nm wavelength range and thus increased photovoltaic module output power, compared to the comparative example (10 ohm TCO). The stacks tested inFIG. 5 are shown in the table ofFIG. 7 . -
FIG. 6 is a table setting forth the layer stacks tested inFIG. 4 . -
FIG. 7 is a table setting forth the layer stacks tested inFIG. 5 . - Referring now more particularly to the figures in which like reference numerals refer to like parts/layers in the several views.
- Photovoltaic devices such as solar cells convert solar radiation into usable electrical energy. The energy conversion occurs typically as the result of the photovoltaic effect. Solar radiation (e.g., sunlight) impinging on a photovoltaic device and absorbed by an active region of semiconductor material (e.g., a semiconductor film including one or more semiconductor layers such as a-Si layers, the semiconductor sometimes being called an absorbing layer or film) generates electron-hole pairs in the active region. The electrons and holes may be separated by an electric field of a junction in the photovoltaic device. The separation of the electrons and holes by the junction results in the generation of an electric current and voltage. In certain example embodiments, the electrons flow toward the region of the semiconductor material having n-type conductivity, and holes flow toward the region of the semiconductor having p-type conductivity. Current can flow through an external circuit connecting the n-type region to the p-type region as light continues to generate electron-hole pairs in the photovoltaic device.
- In certain example embodiments, single junction amorphous silicon (a-Si) photovoltaic devices include three semiconductor layers. In particular, a p-layer, an n-layer and an i-layer which is intrinsic. The amorphous silicon film (which may include one or more layers such as p, n and i type layers) may be of hydrogenated amorphous silicon in certain instances, but may also be of or include hydrogenated amorphous silicon carbon or hydrogenated amorphous silicon germanium, or the like, in certain example embodiments of this invention. For example and without limitation, when a photon of light is absorbed in the i-layer it gives rise to a unit of electrical current (an electron-hole pair). The p and n-layers, which contain charged dopant ions, set up an electric field across the i-layer which draws the electric charge out of the i-layer and sends it to an optional external circuit where it can provide power for electrical components. It is noted that while certain example embodiments of this invention are directed toward amorphous-silicon based photovoltaic devices, this invention is not so limited and may be used in conjunction with other types of photovoltaic devices in certain instances including but not limited to devices including other types of semiconductor material, single or tandem thin-film solar cells, CdS and/or CdTe (including CdS/CdTe) photovoltaic devices, polysilicon and/or microcrystalline Si photovoltaic devices, and the like.
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FIG. 1 is a cross sectional view of a photovoltaic device according to an example embodiment of this invention. The photovoltaic device includes transparent front glass substrate 1 (other suitable material may also be used for the substrate instead of glass in certain instances), optional dielectric layer(s) 2, multilayerfront electrode 3,active semiconductor film 5 of or including one or more semiconductor layers (such as pin, pn, pinpin tandem layer stacks, or the like), back electrode/contact 7 which may be of a TCO or a metal, anoptional encapsulant 9 or adhesive of a material such as ethyl vinyl acetate (EVA) or the like, and anoptional superstrate 11 of a material such as glass. Of course, other layer(s) which are not shown may also be provided in the device.Front glass substrate 1 and/or rear superstrate (substrate) 11 may be made of soda-lime-silica based glass in certain example embodiments of this invention; and it may have low iron content and/or an antireflection coating thereon to optimize transmission in certain example instances. Whilesubstrates superstrate 11 is optional in certain instances.Glass 1 and/or 11 may or may not be thermally tempered and/or patterned in certain example embodiments of this invention. Additionally, it will be appreciated that the word “on” as used herein covers both a layer being directly on and indirectly on something, with other layers possibly being located therebetween. - Dielectric layer(s) 2 may be of any substantially transparent material such as a metal oxide and/or nitride which has a refractive index of from about 1.5 to 2.5, more preferably from about 1.6 to 2.5, more preferably from about 1.6 to 2.2, more preferably from about 1.6 to 2.0, and most preferably from about 1.6 to 1.8. However, in certain situations, the
dielectric layer 2 may have a refractive index (n) of from about 2.3 to 2.5. Example materials fordielectric layer 2 include one or more of silicon oxide, silicon nitride, silicon oxynitride, zinc oxide, tin oxide, titanium oxide (e.g., TiO2), aluminum oxynitride, aluminum oxide, or mixtures thereof. Dielectric layer(s) 2 functions as a barrier layer in certain example embodiments of this invention, to reduce materials such as sodium from migrating outwardly from theglass substrate 1 and reaching the IR reflecting layer(s) and/or semiconductor. Moreover,dielectric layer 2 is material having a refractive index (n) in the range discussed above, in order to reduce visible light reflection and thus increase transmission of visible light (e.g., light from about 450-700 nm and/or 450-600 nm) through the coating and into thesemiconductor 5 which leads to increased photovoltaic module output power. - Still referring to
FIG. 1 , multilayerfront electrode 3 in the example embodiment shown inFIG. 1 , which is provided for purposes of example only and is not intended to be limiting, includes from theglass substrate 1 outwardly first transparent conductive oxide (TCO) ordielectric layer 3 a, first conductive substantially metallicIR reflecting layer 3 b,second TCO 3 c, second conductive substantially metallicIR reflecting layer 3 d,third TCO 3 e, and transparent conductive overcoat orbuffer layer 3 f of or including TiOx(Nb) or TiZnOx(:Al and/or Nb). Optionally,layer 3 a may be a dielectric layer instead of a TCO in certain example instances and serve as a seed layer for thelayer 3 b. Thismultilayer film 3 makes up the front electrode in certain example embodiments of this invention. Of course, it is possible for certain layers ofelectrode 3 to be removed in certain alternative embodiments of this invention (e.g., one or more oflayers multilayer electrode 3.Front electrode 3 may be continuous across all or a substantial portion ofglass substrate 1, or alternatively may be patterned into a desired design (e.g., stripes), in different example embodiments of this invention. Each of layers/films 1-3 is substantially transparent in certain example embodiments of this invention. - First and second conductive substantially metallic
IR reflecting layers semiconductor film 5. Since IR increases the temperature of the device, the reduction of the amount of IR radiation reaching thesemiconductor film 5 is advantageous in that it reduces the operating temperature of the photovoltaic module so as to increase module output power. Moreover, the highly conductive nature of these substantiallymetallic layers 3 b and/or 3 d permits the conductivity of theoverall electrode 3 to be increased. In certain example embodiments of this invention, themultilayer electrode 3 has a sheet resistance of less than or equal to about 12 ohms/square, more preferably less than or equal to about 9 ohms/square, and even more preferably less than or equal to about 6 ohms/square. Again, the increased conductivity (same as reduced sheet resistance) increases the overall photovoltaic module output power, by reducing resistive losses in the lateral direction in which current flows to be collected at the edge of cell segments. It is noted that first and second conductive substantially metallicIR reflecting layers IR reflecting layers 3 b and/or 3 d are each from about 3 to 12 nm thick, more preferably from about 5 to 10 nm thick, and most preferably from about 5 to 8 nm thick. In embodiments where one of thelayers layers 3 b and/or 3 d to reflect significant amounts of IR radiation, while at the same time being substantially transparent to visible radiation which is permitted to reach thesemiconductor 5 to be transformed by the photovoltaic device into electrical energy. The highly conductiveIR reflecting layers electrode 3 much more than the TCO layers; this allows for expansion of the process window(s) of the TCO layer(s) which has a limited window area to achieve both high conductivity and transparency. - First, second, and third TCO layers 3 a, 3 c and 3 e, respectively, may be of any suitable TCO material including but not limited to conducive forms of zinc oxide, zinc aluminum oxide, tin oxide, indium-tin-oxide, indium zinc oxide (which may or may not be doped with silver), TiOx(:Nb), TiZnOx(:Al and/or Nb), or the like. These layers are typically substoichiometric so as to render them conductive as is known in the art. For example, these layers are made of material(s) which gives them a resistance of no more than about 10 ohm-cm (more preferably no more than about 1 ohm-cm, and most preferably no more than about 20 mohm-cm). One or more of these layers may be doped with other materials such as fluorine, aluminum, antimony or the like in certain example instances, so long as they remain conductive and substantially transparent to visible light. In certain example embodiments of this invention, TCO layers 3 c and/or 3 e are thicker than
layer 3 a (e.g., at least about 5 nm, more preferably at least about 10, and most preferably at least about 20 or 30 nm thicker). In certain example embodiments of this invention,TCO layer 3 a is from about 3 to 80 nm thick, more preferably from about 5-30 nm thick, with an example thickness being about 10 nm.Optional layer 3 a is provided mainly as a seeding layer forlayer 3 b and/or for antireflection purposes, and its conductivity is not as important as that oflayers 3 b-3 e (thus,layer 3 a may be a dielectric instead of a TCO in certain example embodiments). In certain example embodiments of this invention,TCO layer 3 c is from about 20 to 150 nm thick, more preferably from about 40 to 120 nm thick, with an example thickness being about 74-75 nm. In certain example embodiments of this invention,TCO layer 3 e is from about 20 to 180 nm thick, more preferably from about 40 to 130 nm thick, with an example thickness being about 94 or 115 nm. - Transparent conductive overcoat or
buffer layer 3 f of or including TiOx(:Nb) and/or TiZnOx(:Al and/or Nb) has been found to be particularly advantageous, especially when located adjacent and contacting thesemiconductor film 5. The transparent front electrode serves as both a window and an electrode in the photovoltaic device. It is desired to have low resistivity and high transparency in the PV sensitive wavelength range.Glass 1 has a refractive index (n) of about 1.5 and photovoltaic semiconductor materials 5 (e.g., a-Si; a-Si/uc-Si; CdS/CdTe; CIS; etc.) have refractive indices (n) of at least 3.4. In order to reduce reflection loss caused by big index differences between theglass 1 andsemiconductor 5, the use of a transparent conductive oxide having a refractive index (n) of at least 2.15 (more preferably at least 2.2, even more preferably at least 2.3, and possibly at least 2.4 at 550 nm) is provided. When positioned adjacent thesemiconductor film 5 as alayer 3 f as shown inFIG. 1 , this results in a reduction in reflection loss thereby improving the efficiency of the photovoltaic (PV) device. The relatively high refractive index oflayer 3 f is compared to the lower refractive indices of 1.8 to 2.1 associated with TCOs such as SnOx(:Sb), ZnOx(:Al), ZnOx(:Ga), and InSnOx. - Transparent
conductive layer 3 f (or 4 f) may thus comprise titanium zinc oxide doped with aluminum and/or niobium. In certain example embodiments, the titanium zinc oxide is doped with from about 0.01 to 10% Al and/or Nb, more preferably from about 0.02 to 7% Al and/or Nb, and most preferably from about 0.1 to 5% Al and/or Nb. In other example embodiments, transparentconductive layer 3 f (or 40 may comprise titanium oxide doped niobium (Al may also be provided in such embodiments, in addition to Nb); in certain example embodiments the titanium oxide is doped with from about 0.01 to 10% Nb, more preferably from about 0.02 to 7% Nb, and most preferably from about 0.1 to 5% Nb. Other dopants may also be provided in certain instances. - Transparent conductive layers TiOx(:Nb) and/or TiZnOx(:Al and/or Nb) have a refractive index of at least 2.2 in most situations, are conductive, and have transparency higher than TiOx. Thus, the use of these materials is superior to pure TiOx. However, the resistivity of these materials sometimes tends to be high, so their use in connection with another more conductive layer in the context of a front electrode of a PV device is desirable in certain example embodiments of this invention (e.g., see
FIGS. 1-2 ). - In certain example embodiments of this invention, the photovoltaic device may be made by providing
glass substrate 1, and then depositing (e.g., via sputtering or any other suitable technique)multilayer electrode 3 on thesubstrate 1. Thereafter thestructure including substrate 1 andfront electrode 3 is coupled with the rest of the device in order to form the photovoltaic device shown inFIG. 1 . For example, thesemiconductor layer 5 may then be formed over the front electrode onsubstrate 1. Alternatively, theback contact 7 andsemiconductor 5 may be fabricated/formed on substrate 11 (e.g., of glass or other suitable material) first; then theelectrode 3 and dielectric 2 may be formed onsemiconductor 5 and encapsulated by thesubstrate 1 via an adhesive such as EVA. - The alternating nature of the TCO layers 3 a, 3 c and/or 3 e, 3 f, and the conductive substantially metallic
IR reflecting layers 3 b and/or 3 d, is also advantageous in that it also one, two, three, four or all of the following advantages to be realized: (a) reduced sheet resistance (Rs) of theoverall electrode 3 and thus increased conductivity and improved overall photovoltaic module output power; (b) increased reflection of infrared (IR) radiation by theelectrode 3 thereby reducing the operating temperature of thesemiconductor 5 portion of the photovoltaic module so as to increase module output power; (c) reduced reflection and increased transmission of light in the visible region of from about 450-700 nm (and/or 450-600 nm) by thefront electrode 3 which leads to increased photovoltaic module output power; (d) reduced total thickness of thefront electrode coating 3 which can reduce fabrication costs and/or time; and/or (e) an improved or enlarged process window in forming the TCO layer(s) because of the reduced impact of the TCO's conductivity on the overall electric properties of the module given the presence of the highly conductive substantially metallic layer(s). - The active semiconductor region or
film 5 may include one or more Payers, and may be of any suitable material. For example, theactive semiconductor film 5 of one type of single junction amorphous silicon (a-Si) photovoltaic device includes three semiconductor layers, namely a p-layer, an n-layer and an i-layer. The p-type a-Si layer of thesemiconductor film 5 may be the uppermost portion of thesemiconductor film 5 in certain example embodiments of this invention; and the i-layer is typically located between the p and n-type layers. These amorphous silicon based layers offilm 5 may be of hydrogenated amorphous silicon in certain instances, but may also be of or include hydrogenated amorphous silicon carbon or hydrogenated amorphous silicon germanium, hydrogenated microcrystalline silicon, or other suitable material(s) in certain example embodiments of this invention. It is possible for theactive region 5 to be of a double-junction or triple-junction type in alternative embodiments of this invention. CdTe and/or CdS may also be used forsemiconductor film 5 in alternative embodiments of this invention. - Back contact, reflector and/or
electrode 7 may be of any suitable electrically conductive material. For example and without limitation, the back contact orelectrode 7 may be of a TCO and/or a Metal in certain instances. Example TCO materials for use as back contact orelectrode 7 include indium zinc oxide, indium-tin-oxide (ITO), tin oxide, and/or zinc oxide which may be doped with aluminum (which may or may not be doped with silver). The TCO of theback contact 7 may be of the single layer type or a multi-layer type in different instances. Moreover, theback contact 7 may include both a TCO portion and a metal portion in certain instances. For example, in an example multi-layer embodiment, the TCO portion of theback contact 7 may include a layer of a material such as indium zinc oxide (which may or may not be doped with silver), indium-tin-oxide (ITO), tin oxide, and/or zinc oxide closest to theactive region 5, and the back contact may include another conductive and possibly reflective layer of a material such as silver, molybdenum, platinum, steel, iron, niobium, titanium, chromium, bismuth, antimony, or aluminum further from theactive region 5 and closer to thesuperstrate 11. The metal portion may be closer to superstrate 11 compared to the TCO portion of theback contact 7. - The photovoltaic module may be encapsulated or partially covered with an encapsulating material such as
encapsulant 9 in certain example embodiments. An example encapsulant or adhesive forlayer 9 is EVA or PVB. However, other materials such as Tedlar type plastic, Nuvasil type plastic, Tefzel type plastic or the like may instead be used forlayer 9 in different instances. - While the
electrode 3 is used as a front electrode in a photovoltaic device in certain embodiments of this invention described and illustrated herein, it is also possible to use theelectrode 3 as another electrode in the context of a photovoltaic device or otherwise. -
FIG. 2 is a cross sectional view of a photovoltaic device according to still another example embodiment of this invention. The photovoltaic device of theFIG. 2 embodiment includes optional antireflective (AR) layer 1 a on the light incident side of the front glass substrate 1 (of any suitable material); first dielectric layer 2 a of or including one or more of silicon nitride (e.g., Si3N4 or other suitable stoichiometry), silicon oxynitride, silicon oxide (e.g., SiO2 or other suitable stoichiometry), and/or tin oxide (e.g., SnO2 or other suitable stoichiometry); second dielectric layer 2 b of or including titanium oxide (e.g., TiO2 or other suitable stoichiometry) and/or niobium oxide; third layer 2 c (which may be a dielectric or a TCO) which may optionally function as a seed layer (e.g., of or including zinc oxide, zinc aluminum oxide, tin oxide, tin antimony oxide, indium zinc oxide, or the like) for the silver based layer 4 c; conductive silver based IR reflecting layer 4 c; optional overcoat or contact layer 4 d (which may be a dielectric or conductive) of or including an oxide of Ni and/or Cr, NiCr, Ti, an oxide of Ti, zinc aluminum oxide, or the like; TCO 4 e (e.g., including one or more layers) of or including zinc oxide, zinc aluminum oxide, tin oxide (which may or may not be doped with fluorine), tin antimony oxide, zinc tin oxide, indium tin oxide, indium zinc oxide, and/or zinc gallium aluminum oxide; TCO buffer layer 4 f of or including TiOx(:Nb) and/or TiZnOx(:Al and/or Nb); semiconductor film 5 of or including one or more layers such as CdS/CdTe, a-Si, or the like (e.g., film 5 may be made up of a layer of or including CdS adjacent layer 4 f, and a layer of or including CdTe adjacent layer 7); optional back contact/electrode/reflector 7 of aluminum or the like; optional adhesive 9 of or including a polymer such as PVB; and optional back/rear glass substrate 11. In certain example embodiments of this invention,dielectric layer 2 a may be from about 10-20 nm thick, more preferably from about 12-18 nm thick;layer 2 b may be from about 10-20 nm thick, more preferably from about 12-18 nm thick;layer 2 c may be from about 5-20 nm thick, more preferably from about 5-15 nm thick (layer 2 c is thinner than one or both oflayers layer 4 c may be from about 5-20 nm thick, more preferably from about 6-10 nm thick;layer 4 d may be from about 0.2 to 5 nm thick, more preferably from about 0.5 to 2 nm thick;TCO film 4 e may be from about 50-200 nm thick, more preferably from about 75-150 nm thick, and may have a resistivity of no more than about 100 mΩ in certain example instances; andbuffer layer 4 f may be from about 10-50 nm thick, more preferably from about 20-40 nm thick and may have a resistivity of no more than about 1 Me-cm in certain example instances. Moreover, the surface ofglass 1 closest to the sun may be patterned via etching or the like in certain example embodiments of this invention. The TiOx(:Nb) and/or TiZnOx(:Al and/or Nb)inclusive layer 4 f in theFIG. 2 embodiment is advantageous for the reasons discussed above in connection with theFIG. 1 embodiment. - Still referring to the
FIG. 2 embodiment,semiconductor film 5 may include a single pin or pn semiconductor structure, or a tandem semiconductor structure in different embodiments of this invention.Semiconductor 5 may be of or include silicon in certain example instances. In other example embodiments,semiconductor film 5 may include a first layer of or including CdS (e.g., window layer) adjacent or closest to layer 4 f and a second semiconductor layer of or including CdTe (e.g., main absorber) adjacent or closest to the back electrode orcontact 7. - Also referring to
FIG. 2 , in certain example embodiments, firstdielectric layer 2 a has a relatively low refractive index (n) (e.g., n of from about 1.7 to 2.2, more preferably from about 1.8 to 2.2, still more preferably from about 1.95 to 2.1, and most preferably from about 2.0 to 2.08), seconddielectric layer 2 b has a relatively high (compared tolayer 2 a) refractive index (n) (e.g., n of from about 2.2 to 2.6, more preferably from about 2.3 to 2.5, and most preferably from about 2.35 to 2.45), and thirddielectric layer 2 c may optionally have a relatively low (compared tolayer 2 b) refractive index (n) (e.g., n of from about 1.8 to 2.2, more preferably from about 1.95 to 2.1, and most preferably from about 2.0 to 2.05). In certain example embodiments,layers 2 a-2 c combine to form a good index matching stack for antireflection purposes and which also functions as a buffer against sodium migration from theglass 1. In certain example embodiments, the firstdielectric layer 2 a is from about 5-30 nm thick, more preferably from about 10-20 nm thick, thesecond dielectric layer 2 b is from about 5-30 nm thick, more preferably from about 10-20 nm thick, and thethird layer 2 c is of a lesser thickness and is from about 3-20 nm thick, more preferably from about 5-15 nm thick, and most preferably from about 6-14 nm thick. Whilelayers Layers layer 2 a is a metal oxide and/or nitride, or silicon nitride in certain example instances.Layers 2 a-2 c may be deposited by sputtering or any other suitable technique. - The photovoltaic device of
FIG. 2 may have a sheet resistance of no greater than about 18 ohms/square, more preferably no greater than about 15 ohms/square, even more preferably no greater than about 13 ohms/square in certain example embodiments of this invention. Moreover, theFIG. 2 embodiment may have tailored transmission spectra having more than 85% (more preferably at least 87%) transmission into thesemiconductor 5 in part or all of the wavelength range of from about 450-600 nm and/or 450-700 nm, where AM1.5 may have the strongest intensity, in certain example embodiments of this invention (e.g., seeFIG. 4 ). -
FIG. 4 is a percent transmission (T %) versus wavelength (nm) graph illustrating transmission spectra into a hydrogenated a-Sithin film 5 of a photovoltaic device comparing front electrode examples of theFIG. 2 embodiment of this invention versus a comparative example (ZnAlOx) where a zinc aluminum oxide TCO was used instead adjacent the semiconductor. In the 75 nm thick TiNbOx example of theFIG. 2 embodiment shown inFIG. 4 ,layer 4 f of the PV device was a 75 nm thick layer of TiNbOx and thelayer 4 e was not present; and in the 75 nm TiNbOx example of theFIG. 2 embodiment shown inFIG. 4 ,layer 4 f of the PV device was a 30 nm thick layer of TiNbOx andlayer 4 e was a 85 nm thick layer of ZnAlOx. It can be seen fromFIG. 4 that these two example embodiments of this invention (see the circle and vertical bar lines inFIG. 4 ) surprisingly realized increased transmission into thesemiconductor 5 compared to the comparative example (115 nm ZnAlOx aslayer 4 e wherelayer 4 f did not exist) in at least substantial parts of the range of from 450-700 nm, more preferably the range of from 475-600 nm. This shows that the examples of this invention have increased transmission in at least a substantial part of the approximately 450-700 nm wavelength range (or in at least a substantial part of the 475-600 nm range) and thus increased photovoltaic module output power, compared to the comparative example. The stacks tested inFIG. 4 are shown in the table ofFIG. 6 , with the last two lines inFIG. 6 illustrating the stacks of the examples of this invention tested inFIG. 4 , and the TCC-1 line inFIG. 6 illustrating the layer stack of the comparative example discussed above. The first line inFIG. 6 illustrates the stack of another comparative example tested inFIG. 4 . -
FIG. 3 is a cross sectional view of a photovoltaic device according to yet another example embodiment of this invention. TheFIG. 3 embodiment differs from theFIG. 1-2 embodiments, for example, in that theFIG. 3 embodiment does not include a Ag conductive layer in the front electrode. Instead, the front electrode in theFIG. 3 embodiment is of or includes aTCO 4 e (e.g., including one or more layers) of or including zinc oxide, zinc aluminum oxide, tin oxide (which may or may not be doped with fluorine), tin antimony oxide, zinc tin oxide, indium tin oxide, indium zinc oxide, and/or zinc gallium aluminum oxide; andTCO buffer layer 4 f of or including TiOx(:Nb) and/or TiZnOx(:Al and/or Nb). Thesemiconductor film 5 may be of or including a-Si, or any other suitable semiconductor discussed above. Transparent conductive TiOx(:Nb) and/or TiZnOx(:Al and/or Nb)layer 4 f in theFIG. 3 embodiment is advantageous for the reasons set forth above in connection with theFIG. 1-2 embodiments, and is characterized by the thicknesses and resistance values discussed above. -
FIG. 5 is a percent transmission (T %) versus wavelength (nm) graph illustrating transmission spectra into a hydrogenated a-Sithin film 5 of a photovoltaic device comparing a front electrode example of theFIG. 3 embodiment of this invention (see 10 ohm TCO+50 nm TiNbOx) versus a comparative example (ZnAlOx). In the comparative example, only a 700 nm thick zinc aluminum oxide TCO was used as the front electrode immediately adjacent thesemiconductor film 5. In the example of theFIG. 3 embodiment tested in connection withFIG. 5 , the front electrode was made up of a 700 nmthick TCO 4 e of zinc aluminum oxide and a 50 nmthick TCO 4 f of titanium niobium oxide immediately adjacent and contacting thesemiconductor film 5. The stacks tested inFIG. 5 are set forth in the table ofFIG. 7 , with the last line inFIG. 7 representing the example according to theFIG. 3 embodiment of this invention (with an additional layer of silicon oxynitride between theglass 1 and the front electrode), and the next to last line inFIG. 7 representing the comparative example ofFIG. 5 . It can be seen fromFIG. 5 that the example embodiment of this invention (see the circle line inFIG. 5 ) surprisingly realized increased transmission into thesemiconductor 5 compared to the comparative example (see the vertical bar line inFIG. 5 ) in at least a substantial part of the range of from 450-700 nm, more preferably at least in a substantial part of the range of from 475-600 nm. This shows that the examples of this invention have increased transmission in at least a substantial part of the approximately 450-700 nm wavelength range (or in at least a substantial part of the 475-600 nm range) and thus increased photovoltaic module output power, compared to the comparative example. - While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (12)
1-12. (canceled)
13. A photovoltaic device comprising:
a front glass substrate;
a front electrode;
a semiconductor film, wherein the front electrode is located between at least the front substrate and the semiconductor film; and
wherein the front electrode of the photovoltaic device comprises a first conductive layer and a second conductive layer, wherein the second conductive layer is located between at least the first conductive layer and the semiconductor film, and is part of the front electrode, and
wherein the second conductive layer comprises titanium oxide doped with niobium, and wherein the second conductive layer has a refractive index (n) of at least about 2.2.
14. The photovoltaic device of claim 13 , wherein the titanium oxide is doped with from about 0.01 to 10% Nb, and may optionally further include aluminum.
15. The photovoltaic device of claim 13 , wherein the titanium oxide is doped with from about 0.1 to 5% Nb.
16. The photovoltaic device of claim 13 , further comprising:
a first layer comprising one or more of silicon nitride, silicon oxide, silicon oxynitride, and/or tin oxide;
a second layer comprising one or more of titanium oxide and/or niobium oxide, wherein at least the first layer is located between the front substrate and the second layer, wherein the first layer and the second layer are located between at least the front substrate and the front electrode;
a third layer comprising zinc oxide and/or zinc aluminum oxide; and
wherein the first conductive layer comprises silver, which is contacts said third layer comprising zinc oxide and/or zinc aluminum oxide, and wherein said second conductive layer comprising titanium oxide doped niobium is provided between at least the semiconductor film and the first conductive layer comprising silver.
17. The photovoltaic device of claim 13 , wherein the second conductive layer comprising titanium oxide doped niobium has a refractive index (n) of at least about 2.2.
18. The photovoltaic device of claim 13 , wherein the second conductive layer comprising titanium oxide doped niobium directly contacts the semiconductor film.
19. The photovoltaic device of claim 13 , wherein first conductive layer is a TCO comprising one or more of zinc oxide, zinc aluminum oxide, tin oxide, indium-tin-oxide, indium zinc oxide, tin antimony oxide, and zinc gallium aluminum oxide.
20. The photovoltaic device of claim 13 , wherein the first conductive layer comprises silver.
21. The photovoltaic device of claim 13 , wherein the semiconductor film comprises (i) a-Si, or (ii) a first layer comprising CdS and a second layer comprising CdTe.
22. The photovoltaic device of claim 13 , wherein the photovoltaic device, including the front electrode and front substrate, has an ambient transmission of at least 85% into the semiconductor film in at least a substantial part of the wavelength range of from about 450-600 nm.
23. The photovoltaic device of claim 13 , wherein the photovoltaic device, including the front electrode and front substrate, has an ambient transmission of at least 87% into the semiconductor film in at least a substantial part of the wavelength range of from about 450-600 nm.
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