US20100043707A1 - Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus - Google Patents

Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus Download PDF

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Publication number
US20100043707A1
US20100043707A1 US12/608,011 US60801109A US2010043707A1 US 20100043707 A1 US20100043707 A1 US 20100043707A1 US 60801109 A US60801109 A US 60801109A US 2010043707 A1 US2010043707 A1 US 2010043707A1
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United States
Prior art keywords
reaction
gas
particles
reaction chamber
film
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Abandoned
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US12/608,011
Inventor
Takayuki Furusawa
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Toshiba Corp
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Toshiba Corp
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Priority to JP2005-256804 priority Critical
Priority to JP2005256804A priority patent/JP4728748B2/en
Priority to US11/469,724 priority patent/US7631651B2/en
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US12/608,011 priority patent/US20100043707A1/en
Publication of US20100043707A1 publication Critical patent/US20100043707A1/en
Abandoned legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407Cleaning of reactor or reactor parts by using wet or mechanical methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Abstract

A cleaning method of a semiconductor manufacturing apparatus begins by introducing film forming gas include reaction gas not forming a film by itself to reaction chamber to form the film on a semiconductor substrate, decreasing pressure of the reaction chamber, solidifying or liquefying the reaction gas to form particles by using small-particles in the reaction chamber as cores, and exhausting the particles from the reaction chamber. Using this method, foreign small-particles can easily be removed from the apparatus and suppress any possible contamination of semiconductor substrates to be processed.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a Divisional application of U.S. application Ser. No. 11/469,724, filed Sep. 1, 2006, now allowed; and claims the benefit of priority from the prior Japanese Patent Application No. 2005-256804 filed on Sep. 5, 2005, the entire contents of which are incorporated herein by reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates a cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus such as film forming apparatus.
  • 2. Description of the Related Art
  • Film forming apparatuses such as low pressure CVD (chemical vapor deposition) apparatuses are typically used for forming films on semiconductor substrates in the manufacturing process of semiconductors.
  • FIG. 1 shows a schematic cross sectional view of a low pressure CVD apparatus. According to FIG. 4, the apparatus comprises a reaction tube 103 including an inner tube 103 a and an outer tube 103 b where a boat 102 carrying a plurality of semiconductor substrates 101 to be processed is mounted and a closure 104 for sealing the reaction tube. The reaction tube 103 is connected to a reaction gas feed pipe 105, which is included in a supply system, also connected to a vacuum pump 106, which is included in an exhaust system, through a gate valve 107. A heater 108 is arranged around the reaction tube to heat reaction gas.
  • Part of excessive gas not participating in the film forming accumulates as reaction byproducts 109 near the closure 104 at an end of the reaction tube 103. As the film forming process is repeated, the amount of the adhering and accumulating reaction byproducts 109 increases. Then, part of the reaction byproducts 109 come off, to float in air and contaminate the semiconductor substrates to be processed so that they usually removed by cleaning gas. However, it has been difficult to effectively remove floating small-particles (foreign-material) 110 that are not moved away on the exhaust gas flow.
  • Meanwhile, as a method for cleaning small-particles in an etching apparatus, it is suggested that introducing steam under reduced pressure using the small-particles as cores for solidification/liquefaction to make small-particles removable (see, for example, Jpn. Pat. Publication No. 11-54485). However, it has been difficult to apply any of the method to the film forming apparatus, because an injection channel has to be additionally provided to inject a foreign object such as steam into the film forming apparatus, and a tiny amount of the injected foreign object is remaining in the apparatus, it can adversely affect the film forming process and contaminate the semiconductor substrates to be processed.
  • BRIEF SUMMARY OF THE INVENTION
  • Cleaning method of semiconductor manufacturing apparatus according to an embodiment of present invention begins by introducing film forming gas include reaction gas not forming a film by itself to reaction chamber to form the film on a semiconductor substrate, decreasing pressure of the reaction chamber, solidifying or liquefying the reaction gas to form particles by using small-particles in the reaction chamber as cores, and exhausting the particles from the reaction chamber.
  • Semiconductor manufacturing apparatus according to an embodiment of present invention includes a reaction chamber for introducing film forming gas include reaction gas not forming a film by itself, the film forming gas forming the film on a semiconductor substrate, a supply system for introducing the film forming gas to the reaction chamber, and an exhaust system for decreasing pressure of the reaction chamber to solidify or liquefy the reaction gas to form particles by using small-particles in the reaction chamber as cores and exhausting the particles from the reaction chamber.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross sectional view showing a low pressure CVD apparatus of prior art.
  • FIG. 2 is a cross sectional view showing a low pressure CVD apparatus of an embodiment of the present invention.
  • FIG. 3 is a cross sectional view showing a low pressure CVD apparatus of FIG. 2 in the cleaning process of the embodiment of the present invention.
  • FIG. 4 is a graph illustrating a number of particles on a surface of a semiconductor substrate relative to an accumulated film thickness of the embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, the embodiment relating to the present invention will be described in greater detail by referring to FIGS. 2 through 4.
  • FIG. 2 shows a schematic cross sectional view of the low pressure CVD apparatus as a semiconductor manufacturing apparatus of this embodiment. According to FIG. 2, the apparatus comprises a reaction tube (reaction chamber) 3 including an inner tube 3 a and an outer tube 3 b where a boat 2 carrying a plurality of semiconductor substrates to be processed is mounted and a closure 4 for sealing the reaction tube. The reaction tube 3 is connected to a reaction gas feed pipe 5, which is included in a supply system, also connected to a vacuum pump 6, which is included in an exhaust system, through a gate valve 7. A heater 8 is arranged around the reaction tube to heat reaction gas.
  • In the low pressure CVD apparatus having the above-described configuration, films such as SiN films are formed the same as in the prior art on the semiconductor substrates 1 such as 200 mm diameter Si substrates. In the film forming process, firstly semiconductor substrates 1 are loaded on a boat 2 and put into the reaction tube 3. Then, the gate valve 7 is opened and the internal pressure of the reaction tube 3 is reduced to a desired pressure level by means of the vacuum pump 6. Subsequently the film forming gas containing silane gas and NH3 gas is introduced into the reaction tube 3 by way of the reaction gas feed pipe 5. Then, the gas of each type is heated and thermally decomposed in the reaction tube 3 by the heater 8 to form the films such as SiN films 200 nm thickness of on the semiconductor substrates 1. After the film forming operation, the boat 2 is moved out of the reaction tube 3 and a boat 2 that carries mint semiconductor substrates 1 to be processed is brought in. The above process will be repeated.
  • Part of excessive gas not participating in the film forming accumulates as reaction byproducts 9 such as SixNyHz that does not compositionally agree with Si3N4 near the closure 4 at an end of the reaction tube 3 that is cooled to a relatively low temperature level. Then, part of the reaction byproducts 9 float in the inside of the reaction tube 3 as small-particles 10.
  • The reaction byproducts 9 are produced and the small-particles 10 are floating in the low pressure CVD apparatus, the boat 2 loading semiconductor substrates to be processed is moved out of the reaction tube 3, being sealed by the closure 4. Then, the gate valve 7 is opened, the internal gas of the reaction tube 3 is exhausted to decrease the pressure to 1.3 Pa, for example, by the vacuum pump 6. Thereafter, NH3 gas, which is reaction gas not forming a film by itself, is introduced into the reaction tube 3 by way of the reaction gas feed pipe 5 at a flow rate such as 3,500 sccm for 30 seconds. The introduced NH3 gas is cooled in the reaction tube 3 as it gives rise to adiabatic expansion and becomes solidified or liquefied and grows, using floating small-particles that are a part of the reaction byproducts 9 as cores, to form particles 11 as shown. The particles 11 that are formed in this way no longer float in the reaction tube 3 because of an increase of the specific gravity and are discharged from the reaction tube 3 with the exhaust gas flow 12.
  • FIG. 4 shows relation of a number of particles on the surface of a semiconductor substrate to an accumulated film thickness in this embodiment after removing small-particles. The number of ‘particles’ larger than 0.2 μm and the number of ‘small-particles’ 0.1 to 0.2 μm were counted separately. For the purpose of comparison, a number of particles of the prior art that is not adapted to remove small-particles is also shown in FIG. 4.
  • As shown in FIG. 4, the number of the small-particles rapidly increases when the accumulated film thickness exceeds 1.6 μm with the prior art, but the increase in the number of the small-particles is suppressed according to this embodiment because they are mostly removed. Thus, this embodiment can suppress the adhesion of small-particles to the surfaces of semiconductor substrates.
  • In this embodiment, the NH3 gas as reaction gas is introduced as a source of N for SiN films to form particles by using small-particles as cores. The NH3 gas is advantageously because of its high liquefying temperature and easy solidified or liquefied growth by adiabatic expansion. However, the reaction gas to form particles is not limited to NH3 gas and any other gas can alternatively be used so long as the reaction gas that does not form films by itself. For example, PH3 gas and B2H6 gas using to for dope impurities can be used. Furthermore, N2O gas and O2 gas as sources of O for forming a SiOC film and HCl gas as reaction gas to be used with monomethyl silane for forming a SiC film.
  • This embodiment is applied to a low pressure CVD apparatus, also be applied to some other film forming apparatuses such as a plasma CVD apparatus.
  • The inside of the reaction tube is preferably subjected to a preliminary cleaning operation using cleaning gas as in the case of the prior art to remove the reaction byproducts adhering to the inside of the reaction tube to a certain extent before removing foreign small-particles in order to improve the effect. Fluorine type gas normally used as cleaning gas can also be used.
  • Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

Claims (7)

1. A semiconductor manufacturing apparatus, the apparatus comprising:
a reaction chamber for introducing a film forming gas comprising a reaction gas, the reaction gas not being able to form a film by itself, the film forming gas forming the film on a semiconductor substrate;
a supply system for introducing the film forming gas to the reaction chamber;
an exhaust system for decreasing pressure of the reaction chamber to solidify or liquefy the reaction gas and to thereby form particles of said reaction gas using small-particles present in the reaction chamber as cores therefore and exhausting the particles from the reaction chamber.
2. The apparatus according to claim 1, comprising a reaction tube including an inner tube and an outer tube, a boat mounted inside said inner tube carrying a plurality of semiconductor substrates to be processed, and a closure sealing the reaction tube, wherein the reaction tube is connected to a reaction gas feed pipe, which is included in a supply system, also connected to a vacuum pump, which is included in an exhaust system, through a gate valve, and wherein a heater is arranged around the reaction tube.
3. The apparatus according to claim 1, wherein the reaction gas is a source gas of nitrogen, oxygen, or impurities included in the film.
4. The apparatus according to claim 1, wherein the supply system is configured to introduce cleaning gas for cleaning the reaction chamber.
5. The apparatus according to claim 1, wherein the small-particles are reaction byproducts of film forming.
6. The apparatus according to claim 1, wherein the small-particles are made of a part of the reaction byproducts accumulated inside of the reaction chamber and floating in the reaction chamber.
7. The apparatus according to claim 1, wherein the reaction gas is solidified or liquefied by adiabatic expansion.
US12/608,011 2005-09-05 2009-10-29 Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus Abandoned US20100043707A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005-256804 2005-09-05
JP2005256804A JP4728748B2 (en) 2005-09-05 2005-09-05 Method for cleaning semiconductor manufacturing equipment
US11/469,724 US7631651B2 (en) 2005-09-05 2006-09-01 Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
US12/608,011 US20100043707A1 (en) 2005-09-05 2009-10-29 Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus

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US12/608,011 US20100043707A1 (en) 2005-09-05 2009-10-29 Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus

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JP4844261B2 (en) * 2006-06-29 2011-12-28 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium

Citations (9)

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Publication number Priority date Publication date Assignee Title
US5116784A (en) * 1990-11-30 1992-05-26 Tokyo Electron Limited Method of forming semiconductor film
US5129958A (en) * 1989-09-22 1992-07-14 Applied Materials, Inc. Cleaning method for semiconductor wafer processing apparatus
US5225378A (en) * 1990-11-16 1993-07-06 Tokyo Electron Limited Method of forming a phosphorus doped silicon film
US5554226A (en) * 1992-12-18 1996-09-10 Tokyo Electron Kabushiki Kaisha Heat treatment processing apparatus and cleaning method thereof
US6139642A (en) * 1997-03-21 2000-10-31 Kokusai Electric Co., Ltd. Substrate processing apparatus and method
US6279503B1 (en) * 1997-10-29 2001-08-28 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus for manufacturing semiconductor devices
US20050087299A1 (en) * 2003-10-08 2005-04-28 Tsuneyuki Okabe Semiconductor device fabricating system and semiconductor device fabricating method
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US20060144234A1 (en) * 2003-06-25 2006-07-06 Tokyo Electron Limited Trapping device, processing system, and method removing impurities

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JP3119475B2 (en) * 1989-04-10 2000-12-18 日本電気株式会社 Method for manufacturing semiconductor device
JPH03206618A (en) * 1990-01-08 1991-09-10 Nec Corp Manufacture of semiconductor device
JPH06252063A (en) 1993-02-26 1994-09-09 Kyocera Corp Plasma cvd device
JP3539446B2 (en) 1994-12-16 2004-07-07 株式会社荏原製作所 By-product trap device and cleaning method thereof
JP3676912B2 (en) 1997-08-07 2005-07-27 株式会社ルネサステクノロジ Semiconductor manufacturing apparatus and foreign matter removing method thereof
JP4700236B2 (en) * 2001-08-03 2011-06-15 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JP4018432B2 (en) * 2002-04-12 2007-12-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129958A (en) * 1989-09-22 1992-07-14 Applied Materials, Inc. Cleaning method for semiconductor wafer processing apparatus
US5225378A (en) * 1990-11-16 1993-07-06 Tokyo Electron Limited Method of forming a phosphorus doped silicon film
US5116784A (en) * 1990-11-30 1992-05-26 Tokyo Electron Limited Method of forming semiconductor film
US5554226A (en) * 1992-12-18 1996-09-10 Tokyo Electron Kabushiki Kaisha Heat treatment processing apparatus and cleaning method thereof
US6139642A (en) * 1997-03-21 2000-10-31 Kokusai Electric Co., Ltd. Substrate processing apparatus and method
US6279503B1 (en) * 1997-10-29 2001-08-28 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus for manufacturing semiconductor devices
US20060144234A1 (en) * 2003-06-25 2006-07-06 Tokyo Electron Limited Trapping device, processing system, and method removing impurities
US20050087299A1 (en) * 2003-10-08 2005-04-28 Tsuneyuki Okabe Semiconductor device fabricating system and semiconductor device fabricating method
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD

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US20070074738A1 (en) 2007-04-05
JP2007073626A (en) 2007-03-22
US7631651B2 (en) 2009-12-15
JP4728748B2 (en) 2011-07-20

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