US20090181481A1 - Method of Manufacturing an LED - Google Patents
Method of Manufacturing an LED Download PDFInfo
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- US20090181481A1 US20090181481A1 US12/013,687 US1368708A US2009181481A1 US 20090181481 A1 US20090181481 A1 US 20090181481A1 US 1368708 A US1368708 A US 1368708A US 2009181481 A1 US2009181481 A1 US 2009181481A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Definitions
- the invention relates to LED (light-emitting diode) manufacturing and more particularly to a method of manufacturing an LED of high reflectivity wherein the LED having a metal reflector which comprises an Au layer coated on an Ag layer thereof after annealing.
- a conventional LED is schematically shown in FIG. 8 .
- the LED comprises a substrate 51 , an n-type GaN (gallium nitride) layer 52 deposited on the substrate 51 , an active layer 54 deposited on a portion of the n-type GaN layer 52 , an n-type metal electrode 55 on another portion of the n-type GaN layer 52 , a p-type GaN layer 53 deposited on the active layer 54 , and a p-type metal electrode 56 on the p-type GaN layer 53 .
- n-type GaN gallium nitride
- the above conventional LED has a low light emission efficiency.
- FIG. 9 Another conventional method of manufacturing LED is schematically shown in FIG. 9 .
- a produced LED is formed on an n-GaN based epitaxial layer 40 .
- the LED comprises a metal reflector 36 including an upper Ni (nickel) layer 361 , an intermediate Ag (silver) layer 362 , and a lower Au (gold) layer 363 stacked together in which the Ni layer 361 functions as adhesive and the Ag layer 362 acts for reflecting light; a p-type metal electrode 35 electrically interconnecting the Au layer 363 and the n-GaN based epitaxial layer 40 ; a p-type GaN layer 33 deposited on the metal reflector 36 to be electrically connected to the p-type metal electrode 35 through the Au layer 363 ; an active layer 37 deposited on the p-type GaN layer 33 ; an n-type GaN layer 32 deposited on the active layer 37 ; an n-type metal electrode 34 electrically interconnecting the n-type GaN layer 32 and the n-
- Ni, Ag, and Au layers 361 , 362 , and 363 are annealed in a furnace to form the metal reflector 36 which is adhered to the p-type GaN layer 33 .
- a metal reflector 36 of high reflectivity can increase light emission efficiency of LED.
- Au 363 tends to melt and thus permeates Ag 362 in the annealing process. This can decrease reflectivity of the Ag layer 362 , resulting in a decrease of light emission efficiency of the LED.
- the invention provides a method of manufacturing an LED comprises forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN layer; attaching an n-type metal electrode to a second portion of the n-type GaN layer; depositing a p-type GaN layer on the active layer; forming a metal reflector on the p-type GaN layer; attaching a p-type metal electrode to the metal reflector; and attaching the p-type metal electrode and the n-type metal electrode to an epitaxial layer respectively, wherein the metal reflector comprises a transparent layer, an Ag layer, and an Au layer and wherein the transparent layer and the Ag layer are formed by annealing in a furnace, and the Au layer is subsequently coated on the Ag layer.
- FIG. 1 is a schematic sectional view of an LED being manufactured in a first step of a method according to the invention where a transparent layer and an Ag layer are formed;
- FIG. 2 is a view similar to FIG. 1 where an Au layer is formed on the Ag layer and a p-type metal electrode is attached onto the Au layer in a second step of the method;
- FIG. 3 is a schematic sectional view of the LED formed with an epitaxial layer in a third step of the method
- FIG. 4 is a diagram of Current-voltage (I-V) characteristics of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts at an annealing temperature of 500° C. for 10 min in O 2 ambient.
- the inset shows the reflectivity of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts;
- FIG. 5 a is a diagram of SIMS depth profiles of (Ni/Ag)-annealed/Au;
- FIG. 5 b is a diagram of SIMS depth profiles of (Ni/Ag/Au)-annealed contacts
- FIG. 6 is a diagram of Reflectivity of (Ni/Ag)-annealed/Au contacts annealed at 500° C. for 10 min in an O 2 ambient.
- FIG. 7 is a diagram of Resistivity of (Ni/Ag)-annealed/Au contacts annealed at 500° C. for (a) 5 min (b) 10 min.
- the inset shows the reflectivity of (Ni/Ag)-annealed/Au contacts.
- FIG. 8 is a schematic sectional view of a conventional LED.
- FIG. 9 is a schematic sectional view of another conventional LED formed with an epitaxial layer.
- FIGS. 1 to 3 a method of manufacturing LED 10 in accordance with a preferred embodiment of the invention is illustrated.
- a substrate 11 is formed.
- an n-type GaN layer 12 is deposited on the substrate 11 .
- an active layer 17 is deposited on a portion of the n-type GaN layer 12 and an n-type metal electrode 14 is attached to another portion of the n-type GaN layer 12 respectively in which the n-type metal electrode 14 is electrically connected to the n-type GaN layer 12 .
- a p-type GaN layer 13 is deposited on the active layer 17 .
- a transparent layer 161 is formed on the p-type GaN layer 13 .
- an Ag layer 162 is formed on the transparent layer 161 .
- the transparent layer 161 and Ag layer 162 are annealed in a furnace. Next, the stacked transparent layer 161 and Ag layer 162 are adhered on the p-type GaN layer 13 .
- an Au layer 163 is coated on the Ag layer 162 and thus a metal reflector 16 is formed. Finally, a p-type metal electrode 15 is attached to the Au layer 163 and electrically connected thereto.
- the transparent layer 161 is formed of nickel, tin oxide, indium tin oxide, zinc oxide, or zinc aluminum oxide.
- the transparent layer 161 has a thickness more than 1 ⁇ m.
- the annealing process is conducted in a temperature greater 500 ⁇ so as to form the transparent layer 161 .
- the annealing process is conducted in a temperature less than 450 ⁇ so as to form the transparent layer 161 .
- thickness of the Au layer 163 should be sufficiently large. Otherwise the Au layer 163 may peel off when electrically connecting to another component.
- the produced LED is attached onto an epitaxial layer 20 in which the n-type metal electrode 14 is further electrically connected to the epitaxial layer 20 and the p-type metal electrode 15 is further electrically connected to the epitaxial layer 20 respectively.
- FIG. 4 shows the current-voltage (I-V) characteristics of both (Ni/Ag)-annealed/Au samples at an annealing temperature of 500° C. for 10 min in O 2 ambient.
- the contact resistance of Ni/Ag/Au-annealed samples with a value of 4.35 ⁇ 10 ⁇ 4 ⁇ cm 2 is one order less than that of the ⁇ Ni/Ag ⁇ -annealed/Au contacts ⁇ 3.44 ⁇ 10 ⁇ 3 ⁇ cm 2 ⁇ .
- I-V current-voltage
- reduced light reflectance ⁇ 63 ⁇ of Ni/Ag/Au-annealed samples at 465 nm wavelength is found to be 29 ⁇ less compared to that of ⁇ Ni/Ag ⁇ -annealed/Au contacts (92 ⁇ ).
- Ag is an excellent material for metallic reflectors due to its high reflectivity in the visual light wavelength region.
- the strong interdiffusion of Ohmic metals and GaN in Ni/Ag/Au-annealed samples resulted in poor reflectance.
- the (Ni/Ag)-annealed/Au samples have a slightly larger contact resistivity when compared to the Ni/Ag/Au-annealed contacts but exhibit higher reflectivity for the usage of FCLED.
- FIGS. 5 a and 5 b show the secondary ion mass spectrometry (SIMS) depth profiles of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts, respectively. It is observed that a strong interdiffusion of Ohmic metals and GaN occurs in Ni/Ag/Au-annealed contacts but not in (Ni/Ag)-annealed/Au contacts. Thus, the low reflectivity of Ni/Ag/Au-annealed contacts can be attributed to the intermixing of Ni, Ag, Au metals.
- SIMS. 5 a and 5 b show the secondary ion mass spectrometry (SIMS) depth profiles of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts, respectively. It is observed that a strong interdiffusion of Ohmic metals and GaN occurs in Ni/Ag/Au-annealed contacts but not in (Ni/Ag)-anne
- FIG. 6 shows the reflectivity of (Ni/Ag)-annealed/Au contacts annealed at 500° C. for 10 min in an O 2 ambient.
- the resistivity of our proposed (Ni/Ag)-annealed/Au contacts is shown in FIG. 7 , in which the (Ni/Ag) double layers with three different thickness of Ni, i.e., 1, 3, 5 nm, were annealed at an annealing temperature of 500° C. for both 5 and 10 min.
- the reflectivity of the Ohmic contact with 1 nm thickness of Ni is shown in the inset. The samples annealed for 10 min produced better Ni oxide/p-GaN contacts and resulted in lower resistivity than the samples annealed for 5 min.
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Abstract
Description
- 1. Field of Invention
- The invention relates to LED (light-emitting diode) manufacturing and more particularly to a method of manufacturing an LED of high reflectivity wherein the LED having a metal reflector which comprises an Au layer coated on an Ag layer thereof after annealing.
- 2. Description of Related Art
- A conventional LED is schematically shown in
FIG. 8 . The LED comprises asubstrate 51, an n-type GaN (gallium nitride)layer 52 deposited on thesubstrate 51, anactive layer 54 deposited on a portion of the n-type GaN layer 52, an n-type metal electrode 55 on another portion of the n-type GaN layer 52, a p-type GaN layer 53 deposited on theactive layer 54, and a p-type metal electrode 56 on the p-type GaN layer 53. - The above conventional LED has a low light emission efficiency.
- Another conventional method of manufacturing LED is schematically shown in
FIG. 9 . A produced LED is formed on an n-GaN basedepitaxial layer 40. The LED comprises ametal reflector 36 including an upper Ni (nickel)layer 361, an intermediate Ag (silver)layer 362, and a lower Au (gold)layer 363 stacked together in which theNi layer 361 functions as adhesive and theAg layer 362 acts for reflecting light; a p-type metal electrode 35 electrically interconnecting theAu layer 363 and the n-GaN basedepitaxial layer 40; a p-type GaN layer 33 deposited on themetal reflector 36 to be electrically connected to the p-type metal electrode 35 through theAu layer 363; anactive layer 37 deposited on the p-type GaN layer 33; an n-type GaN layer 32 deposited on theactive layer 37; an n-type metal electrode 34 electrically interconnecting the n-type GaN layer 32 and the n-GaN basedepitaxial layer 40; and asubstrate 31 deposited on the n-type GaN layer 32. - The components Ni, Ag, and
Au layers metal reflector 36 which is adhered to the p-type GaN layer 33. - Light emitted from the
active layer 37 impinges themetal reflector 36 prior to reflecting to theactive layer 37. Thus, ametal reflector 36 of high reflectivity can increase light emission efficiency of LED. - However,
Au 363 tends to melt and thus permeatesAg 362 in the annealing process. This can decrease reflectivity of theAg layer 362, resulting in a decrease of light emission efficiency of the LED. - In addition, there have been numerous suggestions in prior patents for the manufacturing of an LED. For example, U.S. Pat. No. 7,279,347 discloses a method for manufacturing a light-emitting structure of a light-emitting device (LED). Thus, it is desirable to provide a novel method of manufacturing an LED in order to overcome the inadequacies of the prior art.
- It is therefore one object of the invention to provide a method of manufacturing an LED of high reflectivity.
- To achieve the above and other objects, the invention provides a method of manufacturing an LED comprises forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN layer; attaching an n-type metal electrode to a second portion of the n-type GaN layer; depositing a p-type GaN layer on the active layer; forming a metal reflector on the p-type GaN layer; attaching a p-type metal electrode to the metal reflector; and attaching the p-type metal electrode and the n-type metal electrode to an epitaxial layer respectively, wherein the metal reflector comprises a transparent layer, an Ag layer, and an Au layer and wherein the transparent layer and the Ag layer are formed by annealing in a furnace, and the Au layer is subsequently coated on the Ag layer.
- The above and other objects, features and advantages of the invention will become apparent from the following detailed description taken with the accompanying drawings.
-
FIG. 1 is a schematic sectional view of an LED being manufactured in a first step of a method according to the invention where a transparent layer and an Ag layer are formed; -
FIG. 2 is a view similar toFIG. 1 where an Au layer is formed on the Ag layer and a p-type metal electrode is attached onto the Au layer in a second step of the method; -
FIG. 3 is a schematic sectional view of the LED formed with an epitaxial layer in a third step of the method; -
FIG. 4 is a diagram of Current-voltage (I-V) characteristics of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts at an annealing temperature of 500° C. for 10 min in O2 ambient. The inset shows the reflectivity of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts; -
FIG. 5 a is a diagram of SIMS depth profiles of (Ni/Ag)-annealed/Au; -
FIG. 5 b is a diagram of SIMS depth profiles of (Ni/Ag/Au)-annealed contacts; -
FIG. 6 is a diagram of Reflectivity of (Ni/Ag)-annealed/Au contacts annealed at 500° C. for 10 min in an O2 ambient. -
FIG. 7 is a diagram of Resistivity of (Ni/Ag)-annealed/Au contacts annealed at 500° C. for (a) 5 min (b) 10 min. The inset shows the reflectivity of (Ni/Ag)-annealed/Au contacts. -
FIG. 8 is a schematic sectional view of a conventional LED; and -
FIG. 9 is a schematic sectional view of another conventional LED formed with an epitaxial layer. - Referring to
FIGS. 1 to 3 , a method of manufacturingLED 10 in accordance with a preferred embodiment of the invention is illustrated. - In a first step as illustrated in
FIG. 1 , asubstrate 11 is formed. Next, an n-type GaN layer 12 is deposited on thesubstrate 11. Next, anactive layer 17 is deposited on a portion of the n-type GaN layer 12 and an n-type metal electrode 14 is attached to another portion of the n-type GaN layer 12 respectively in which the n-type metal electrode 14 is electrically connected to the n-type GaN layer 12. Next, a p-type GaN layer 13 is deposited on theactive layer 17. Next, atransparent layer 161 is formed on the p-type GaN layer 13. Finally, anAg layer 162 is formed on thetransparent layer 161. - It is noted that the
transparent layer 161 andAg layer 162 are annealed in a furnace. Next, the stackedtransparent layer 161 andAg layer 162 are adhered on the p-type GaN layer 13. - In a second step as illustrated in
FIG. 2 , anAu layer 163 is coated on theAg layer 162 and thus ametal reflector 16 is formed. Finally, a p-type metal electrode 15 is attached to theAu layer 163 and electrically connected thereto. - The
transparent layer 161 is formed of nickel, tin oxide, indium tin oxide, zinc oxide, or zinc aluminum oxide. Thetransparent layer 161 has a thickness more than 1 □m. The annealing process is conducted in a temperature greater 500□ so as to form thetransparent layer 161. Alternatively, the annealing process is conducted in a temperature less than 450□ so as to form thetransparent layer 161. Also, thickness of theAu layer 163 should be sufficiently large. Otherwise theAu layer 163 may peel off when electrically connecting to another component. - In a third step as illustrated in
FIG. 3 , the produced LED is attached onto anepitaxial layer 20 in which the n-type metal electrode 14 is further electrically connected to theepitaxial layer 20 and the p-type metal electrode 15 is further electrically connected to theepitaxial layer 20 respectively. - As a result, light emitted from the
active layer 17 passes thetransparent layer 161 and then impinges theAg layer 162. Finally, light is reflected from theAg layer 162 to theactive layer 37. Au is prevented from permeating theAg layer 162 because only thetransparent layer 161 and theAg layer 162 are placed in the furnace in the annealing process. Hence, light reflection of theAg layer 162 is not lowered adversely. As such, reflectivity of themetal reflector 16 is greatly increased. As a result, the produced LED has an increased light emission efficiency. -
FIG. 4 shows the current-voltage (I-V) characteristics of both (Ni/Ag)-annealed/Au samples at an annealing temperature of 500° C. for 10 min in O2 ambient. The contact resistance of Ni/Ag/Au-annealed samples with a value of 4.35×10−4 Ωcm2 is one order less than that of the □Ni/Ag□-annealed/Au contacts □3.44×10−3 Ωcm2□. However, as shown in the inset ofFIG. 6 , reduced light reflectance □63□□ of Ni/Ag/Au-annealed samples at 465 nm wavelength is found to be 29□ less compared to that of □Ni/Ag□-annealed/Au contacts (92□). It is known that Ag is an excellent material for metallic reflectors due to its high reflectivity in the visual light wavelength region. However, the strong interdiffusion of Ohmic metals and GaN in Ni/Ag/Au-annealed samples resulted in poor reflectance. On the other hands the (Ni/Ag)-annealed/Au samples have a slightly larger contact resistivity when compared to the Ni/Ag/Au-annealed contacts but exhibit higher reflectivity for the usage of FCLED. -
FIGS. 5 a and 5 b show the secondary ion mass spectrometry (SIMS) depth profiles of (Ni/Ag)-annealed/Au and Ni/Ag/Au-annealed contacts, respectively. It is observed that a strong interdiffusion of Ohmic metals and GaN occurs in Ni/Ag/Au-annealed contacts but not in (Ni/Ag)-annealed/Au contacts. Thus, the low reflectivity of Ni/Ag/Au-annealed contacts can be attributed to the intermixing of Ni, Ag, Au metals. -
FIG. 6 shows the reflectivity of (Ni/Ag)-annealed/Au contacts annealed at 500° C. for 10 min in an O2 ambient. Three different thicknesses of Ni, 1, 3, 5 nm, are examined. As shown inFIG. 6 , the thicker the Ni thickness is, the lower the reflectance is. In addition, the resistivity of our proposed (Ni/Ag)-annealed/Au contacts is shown inFIG. 7 , in which the (Ni/Ag) double layers with three different thickness of Ni, i.e., 1, 3, 5 nm, were annealed at an annealing temperature of 500° C. for both 5 and 10 min. The reflectivity of the Ohmic contact with 1 nm thickness of Ni is shown in the inset. The samples annealed for 10 min produced better Ni oxide/p-GaN contacts and resulted in lower resistivity than the samples annealed for 5 min. - In order to prepare these p-GaN FCLED reflective Ohmic contacts with the highest level of reflectivity and the lowest resistivity, we suggested that the correspondent two step (Ni/Ag)-annealed/Au metallization process should have a thin Ni thickness (of 1 nm) and a proper Ni/Ag annealing time (of 10 min).
- While the invention herein disclosed has been described by means of specific embodiments, numerous modifications and variations could be made thereto by those skilled in the art without departing from the scope and spirit of the invention set forth in the claims.
Claims (8)
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020117672A1 (en) * | 2001-02-23 | 2002-08-29 | Ming-Sung Chu | High-brightness blue-light emitting crystalline structure |
US6900472B2 (en) * | 1997-12-15 | 2005-05-31 | Lumileds Lighting U.S., Llc | Semiconductor light emitting device having a silver p-contact |
US7279347B2 (en) * | 2002-11-25 | 2007-10-09 | Super Nova Optoelectronics Corp. | Method for manufacturing a light-emitting structure of a light-emitting device (LED) |
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
US20080265265A1 (en) * | 2007-04-29 | 2008-10-30 | Lattice Power (Jiangxi) Corporation | InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME |
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- 2008-01-14 US US12/013,687 patent/US7569432B1/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6900472B2 (en) * | 1997-12-15 | 2005-05-31 | Lumileds Lighting U.S., Llc | Semiconductor light emitting device having a silver p-contact |
US20020117672A1 (en) * | 2001-02-23 | 2002-08-29 | Ming-Sung Chu | High-brightness blue-light emitting crystalline structure |
US7279347B2 (en) * | 2002-11-25 | 2007-10-09 | Super Nova Optoelectronics Corp. | Method for manufacturing a light-emitting structure of a light-emitting device (LED) |
US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
US20080265265A1 (en) * | 2007-04-29 | 2008-10-30 | Lattice Power (Jiangxi) Corporation | InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME |
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