US20090040441A1 - Liquid crystal display and manufacturing method thereof - Google Patents
Liquid crystal display and manufacturing method thereof Download PDFInfo
- Publication number
- US20090040441A1 US20090040441A1 US12/252,494 US25249408A US2009040441A1 US 20090040441 A1 US20090040441 A1 US 20090040441A1 US 25249408 A US25249408 A US 25249408A US 2009040441 A1 US2009040441 A1 US 2009040441A1
- Authority
- US
- United States
- Prior art keywords
- color filter
- depression
- liquid crystal
- crystal display
- common electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Liquid Crystal (AREA)
Abstract
A liquid crystal display is provided, which includes: a substrate; a color filter formed on the substrate, and having a depression and an opening; a common electrode formed on the color filter, and having a depression; and a black member formed on the common electrode and located at the depressions of the common electrode.
Description
- This application claims the priority of Korean Patent Application No. 10-2004-0036784, filed on May 24, 2004, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- 1. Field of the Invention
- The present invention relates to a liquid crystal display and a method for manufacturing the same.
- 2. Discussion of the Background
- A liquid crystal display (LCD) is one of the most widely used flat panel displays. An LCD includes two panels provided with field-generating electrodes, such as pixel electrodes and a common electrode, and a liquid crystal (LC) layer interposed therebetween. The LCD displays images by applying voltages to the field-generating electrodes to generate an electric field in the LC layer, which determines orientations of LC molecules in the LC layer to adjust polarization of incident light.
- A vertical alignment (VA) mode LCD, which aligns LC molecules such that the long axes of the LC molecules are perpendicular to the panels in the absence of an electric field, has a high contrast ratio and a wide reference viewing angle, which is defined as a viewing angle.
- The wide viewing angle of the VA mode LCD can be realized by cutouts in the field-generating electrodes and protrusions on the field-generating electrodes. Since the cutouts and the protrusions can determine the tilt directions of the LC molecules, the tilt directions may be distributed into several directions by using the cutouts and the protrusions such that the reference viewing angle is widened.
- However, because an etchant is used when etching the common electrode to form cutouts in manufacturing method of this LCD, the etchant may penetrate into a color filter in manufacturing process. The penetrated etchant damages and contaminates the color filter. To prevent these problems, a passivation layer may cover the color filter before depositing the common electrode, therefore the manufacturing process becomes complicated. In addition, adding the protrusions on the field-generating electrodes adds operations to the manufacturing process.
- An object of the invention is to simplify manufacturing methods of liquid crystal display including multi domains. Another object of the invention is to improve response time of liquid crystal display including multi domains.
- The present invention discloses a crystal display, including a substrate, a color filter having a depression and an opening and formed on the substrate, a common electrode having a depression and formed on the color filter, and a light blocking member formed on the common electrode and located at the depression of the common electrode.
- The present invention discloses a liquid crystal display, including a first substrate, a plurality of pixel electrodes, provided on the first substrate, including an opening, a second substrate facing the first substrate, a color filter, provided on the second substrate, having a depression facing the pixel electrodes and an opening facing the region between the pixel electrodes, a common electrode, provided on the color filter, having a depression formed by the depression and the opening of the color filter, and a light blocking member provided on the common electrode and located at the depression of the common electrode.
- The present invention discloses method for manufacturing a liquid crystal display panel, including forming a color filter having a depression and an opening, forming a common electrode on the color filter, and forming a light blocking member on the common electrode, wherein, the light blocking member is formed by a photolithography process using a photo-mask having an opaque area facing the depression of the color filter, a translucent area facing the opening of the color filter, and a transmissive area facing a portion of the color filter that does not include the depression or the opening.
- The present invention discloses a liquid crystal display, including a substrate, a color filter, provided on the substrate, having a depression and an opening, a common electrode, provided on the color filter, having a depression formed by the depression and the opening of the color filter, and a black matrix formed on the common electrode.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
-
FIG. 1 is a layout view of a TFT array panel of an LCD according to an embodiment of the invention. -
FIG. 2 is a layout view of a common electrode panel of an LCD according to an embodiment of the invention. -
FIG. 3 is a layout view of an LCD including the TFT array panel shown inFIG. 1 and the common electrode panel shown inFIG. 2 . -
FIG. 4 is a sectional view of the LCD shown inFIG. 3 taken along the line IV-IV′. -
FIG. 5 is a sectional view of the LCD shown inFIG. 3 taken along the lines V-V′ and V′-V″. -
FIG. 6A andFIG. 6B are sectional views of the common electrode panel shown inFIG. 2 ,FIG. 3 , andFIG. 4 in intermediate steps of a manufacturing method thereof according to an embodiment of the invention. -
FIG. 7A andFIG. 7B are sectional views of the TFT array panel shown inFIG. 1 ,FIG. 3 ,FIG. 4 , andFIG. 5 in an intermediate step of a manufacturing method thereof according to an embodiment of the invention. -
FIG. 8A andFIG. 8B are sectional views of the TFT array panel, respectively, showing the TFT array panel after the manufacturing method is performed following the TFT array panel shown inFIG. 7A andFIG. 7B . - The present invention now is described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
- In the drawings, the thickness of layers, films and regions are exaggerated for clarity. Like numerals refer to like elements throughout. It will be understood that when an element such as a layer, film, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.
- Liquid crystal displays according to embodiments of the invention are described below with reference to the accompanying drawings. An LCD is described with reference to
FIG. 1 ,FIG. 2 ,FIG. 3 ,FIG. 4 , andFIG. 5 . -
FIG. 1 is a layout view of a TFT array panel of an LCD,FIG. 2 is a layout view of a common electrode panel of an LCD,FIG. 3 is a layout view of an LCD including the TFT array panel shown inFIG. 1 and the common electrode panel shown inFIG. 2 , andFIG. 4 andFIG. 5 are sectional views of the LCD shown inFIG. 3 taken along the lines IV-IV′, V-V′-V″, respectively. - Referring to
FIG. 1 ,FIG. 2 ,FIG. 3 ,FIG. 4 , andFIG. 5 , an LCD includes aTFT array panel 100, acommon electrode panel 200, and aLC layer 3 interposed between theTFT array panel 100 and thecommon electrode panel 200. TheTFT array panel 100 is described with referenceFIG. 1 ,FIG. 3 , andFIG. 4 . - A plurality of gate lines 121 and a plurality of
storage electrode lines 131 are formed on aninsulating substrate 110, such as transparent glass. - The gate lines 121 extend substantially in a transverse direction and are separated or spaced apart from each other and transmit gate signals. Each gate line 121 includes a plurality of projections forming a plurality of
gate electrodes 124 and anend portion 129 having a large area for contact with another layer or an external driving circuit. The gate lines 121 may extend to be connected with a driving circuit that may be integrated or provided on theTFT array panel 100. - Each
storage electrode line 131 extends substantially in the transverse direction and is disposed between two of the gate lines 121 such that thestorage electrode line 131 is positioned nearer to an upper one of the two gate lines 121, as shown, for example, inFIG. 1 andFIG. 3 . Eachstorage electrode line 131 includes a plurality of sets ofbranches connections 133 e connecting thebranches - A set of
branches second storage electrodes fourth storage electrodes second storage electrodes first storage electrode 133 a has a free end portion and a fixed end portion that is connected with thestorage electrode line 131 and has a projection. The third and thefourth storage electrodes first storage electrode 133 a and upper and lower ends of thesecond storage electrode 133 b, respectively. - Each of the
connections 133 e is connected between afirst storage electrode 133 a of a set ofstorage electrodes second storage electrode 133 b of another set of storage electrodes 133 a-133 d adjacent thereto. It is understood that the invention is not limited to the above-described layout of thestorage electrodes - The
storage electrode lines 131 are supplied with a predetermined voltage, such as a common voltage, which is applied to acommon electrode 270 on thecommon electrode panel 200 of the LCD. Eachstorage electrode line 131 may include a pair of stems extending in the transverse direction. - The gate lines 121 and the
storage electrode lines 131 are preferably made of Al containing metal such as Al and Al alloy, Ag containing metal such as Ag and Ag alloy, Cu containing metal such as Cu and Cu alloy, Mo containing metal such as Mo and Mo alloy, Cr, Ti or Ta. The gate lines 121 and thestorage electrode lines 131 may be formed of a multi-layered structure including two films having different physical characteristics. One of the two films may be made of low resistivity metal including Al containing metal, Ag containing metal, and Cu containing metal for reducing signal delay or voltage drop in the gate lines 121 and the storage electrode lines 131. The other film may be made of material such as Mo containing metal, Cr, Ta or Ti, which has good physical, chemical, and electrical contact characteristics with materials such as indium tin oxide (ITO) or indium zinc oxide (IZO). According to an embodiment of the invention, a lower film contains Cr and an upper film contains Al—Nd alloy. - In addition, the lateral sides of the gate lines 121 and the
storage electrode lines 131 are inclined relative to a surface of the substrate, and the inclination angle thereof ranges from approximately 30 to 80 degrees. - A
gate insulating layer 140, which may be made of silicon nitride (SiNx), is formed on the gate lines 121 and the storage electrode lines 131. - A plurality of
semiconductor stripes 151, which may be made of hydrogenated amorphous silicon (abbreviated to “a—Si”) or polysilicon, are formed on thegate insulating layer 140. Eachsemiconductor stripe 151 extends substantially in the longitudinal direction and has a plurality ofprojections 154 branched out toward thegate electrodes 124. Thesemiconductor stripes 151 are sufficiently wide near the gate lines 121 and thestorage electrode lines 131 such that thesemiconductor stripes 151 cover large areas of the gate lines 121 and the storage electrode lines 131. - A plurality of
ohmic contact stripes 161 andohmic contact islands 165, which may be made of silicide or n+hydrogenated a—Si heavily doped with n type impurity such as phosphorous, are formed on thesemiconductor stripes 151. Eachohmic contact stripe 161 has a plurality ofprojections 163, and theprojections 163 and theohmic contact islands 165 are located in pairs on theprojections 154 of thesemiconductor stripes 151. - The lateral sides of the
semiconductor stripes 151 and theohmic contact stripes 161 andohmic contact islands 165 are inclined relative to a surface of the substrate, and the inclination angles thereof range between approximately 30 to 80 degrees. - A plurality of
data lines 171, a plurality ofdrain electrodes 175 that are separate from thedata lines 171, and a plurality ofisolated metal pieces 178 are formed on theohmic contact stripes 161,ohmic contact islands 165, and thegate insulating layer 140. - The data lines 171 for transmitting data voltages extend substantially in the longitudinal direction and cross the gate lines 121 substantially at right angles. The data lines 171 intersect the
storage electrode lines 131 and theconnections 133 e such that eachdata line 171 is disposed between the first and thesecond storage electrodes data line 171 includes anend portion 179 having a large area for contact with another layer or an external device. Eachdata line 171 includes a plurality ofsource electrodes 173 projecting toward thedrain electrodes 175. - Each
drain electrode 175 includes an end portion having a portion sufficiently large for contact with another layer and another end portion disposed on agate electrode 124 and partly enclosed by asource electrode 173. Thegate electrode 124,source electrode 173,drain electrode 175, andprojection 154 of thesemiconductor stripe 151, form a TFT having a channel provided at a region where theprojection 154 is disposed between thesource electrode 173 and thedrain electrode 175. - The
isolated metal pieces 178 are disposed on the gate lines 121 near the end portions of thestorage electrodes 133 a. - The data lines 171, the
drain electrodes 175, and themetal pieces 178 are may be made of refractory metal such as Cr, Mo, Ti, Ta, or alloys thereof. Further, thedata lines 171, thedrain electrodes 175, and themetal pieces 178 may have a multilayered structure that includes a low-resistivity film (not shown) and a good-contact film (not shown), or thedata lines 171, thedrain electrodes 175, and themetal pieces 178 may have a single layered structure. - Similar to the gate lines 121 and the
storage electrode lines 131, thedata lines 171 and thedrain electrodes 175 may have tapered lateral sides, and the inclination angles thereof may range from approximately 30 to 80 degrees. - The
ohmic contact stripes 161 andohmic contact islands 165 may only be interposed between theunderlying semiconductor stripes 151 and theoverlying data lines 171 and theoverlying drain electrodes 175 thereon and reduce the contact resistance therebetween. Thesemiconductor stripes 151 include a plurality of exposed portions, which are not covered with thedata lines 171 and thedrain electrodes 175, such as portions located between thesource electrodes 173 and thedrain electrodes 175. Although thesemiconductor stripes 151 are mostly narrower than thedata lines 171, thesemiconductor stripes 151 widen near the gate lines 121 and thestorage electrode lines 131 as described above, to smooth the profile of the surface, thereby preventing the disconnection of the data lines 171. - A
passivation layer 180 is formed on thedata lines 171, thedrain electrodes 175, themetal pieces 178, and the exposed portions of thesemiconductor stripes 151. Thepassivation layer 180 is may be made of an inorganic insulator material, such as silicon nitride or silicon oxide, a photosensitive organic material having a good flatness characteristic, or a low dielectric insulating material having a dielectric constant less than 4.0, such as a—Si:C:O and a—Si:O:F formed by plasma enhanced chemical vapor deposition (PECVD). Thepassivation layer 180 may have a double-layered structure that includes a lower inorganic film layer and an upper organic film layer. - The
passivation layer 180 has a plurality ofcontact holes end portions 179 of thedata lines 171 and the end portions of thedrain electrodes 175, respectively. Thepassivation layer 180 and thegate insulating layer 140 have a plurality ofcontact holes 181 exposing theend portions 129 of the gate lines 121, a plurality of contact holes 183 a exposing portions of thestorage electrode lines 131 near the fixed end portions of thefirst storage electrodes 133 a and a plurality ofcontact holes 183 b exposing the projections of the free end portions of thefirst storage electrodes 133 a. - A plurality of
pixel electrodes 190, a plurality ofcontact assistants overpasses 83, which are may be made of a transparent conductor material, such as ITO or IZO, or a reflective conductor material, such as Ag or Al, are formed on thepassivation layer 180. - The
pixel electrodes 190 are physically connected with and coupled to thedrain electrodes 175 through the contact holes 185 such that thepixel electrodes 190 receive data voltage from thedrain electrodes 175. - The
pixel electrodes 190 supplied with data voltage generates an electric field in cooperation with thecommon electrode 270, which determines the orientation ofliquid crystal molecules 310 in theliquid crystal layer 3. - A
pixel electrode 190 and thecommon electrode 270 form a liquid crystal capacitor, which stores applied voltages after the TFT is turned off An additional capacitor, referred to as a “storage capacitor,” is connected in parallel with the liquid crystal capacitor to increase the voltage storing capacity. The storage capacitors are implemented by overlapping thepixel electrodes 190 with thestorage electrode lines 131 including the storage electrodes 133 a-133 d. - Each
pixel electrode 190 is chamfered or beveled at its left corners and the chamfered edges of thepixel electrode 190 form approximately a 45 degree angle with the gate lines 121. - Each
pixel electrode 190 has alower cutout 92 a, acenter cutout 91, and anupper cutout 92 b, which partition thepixel electrode 190 into a plurality of partitions. Thecutouts pixel electrode 190. - The
lower cutouts 92 a and theupper cutouts 92 b obliquely, or diagonally, extend from a right edge of thepixel electrode 190 near an upper right corner approximately to a center of a left edge of thepixel electrode 190 and overlap the third and thefourth storage electrodes lower cutouts 92 a and theupper cutouts 92 b are disposed at lower and upper halves of thepixel electrode 190, respectively, with respect to the imaginary transverse line dividing thepixel electrode 190. Thelower cutouts 92 a and theupper cutouts 92 b form approximately a 45 degree angle with the gate lines 121 and extend substantially perpendicular to each other. - The
center cutout 91 extends along the imaginary transverse line dividing thepixel electrode 190 and has an inlet from the right edge of thepixel electrode 190, which has a pair of inclined edges substantially parallel to thelower cutout 92 a and theupper cutout 92 b, respectively. - Accordingly, the lower half of the
pixel electrode 190 is partitioned into two lower partitions by thelower cutout 92 a and the upper half of thepixel electrode 190 is also partitioned into two upper partitions by theupper cutout 92 b. It is understood that the number of partitions or the number of the cutouts varies depending on design factors, such as the size of pixels, the ratio of the transverse edges and the longitudinal edges of the pixel electrodes, the type and characteristics of theliquid crystal layer 3, etc. - The
contact assistants end portions 129 of the gate lines 121 and theend portions 179 of thedata lines 171 through the contact holes 181 and 182, respectively. Thecontact assistants end portions end portions - The overpasses 183 cross over the gate lines 121 and they are connected with the exposed projection of the fixed end portions of the
first storage electrodes 133 a and the exposed portions of thestorage electrode lines 131 through the contact holes 183 b and 183 a, respectively, which are disposed opposite each other with respect to the gate lines 121. The overpasses 183 overlaps themetal pieces 178 and they may be coupled to themetal pieces 178. Thestorage electrode lines 131 including thestorage electrodes metal pieces 178 are used to repair defects in the gate lines 121, thedata lines 171, or the TFTs. The electrical connection between the gate lines 121 and thestorage electrode lines 131 for repairing the gate lines 121 is obtained by illuminating the cross points of the gate lines 121 and theoverpasses 83 by a laser beam to couple the gate lines 121 with theoverpasses 83. Themetal pieces 178 enhance the electrical connection between the gate lines 121 and the overpasses 183. - The description of the
common electrode panel 200 follows with reference toFIG. 2 ,FIG. 3 , andFIG. 4 . - A plurality of
color filters 230 are formed on thesubstrate 210 that substantially face thepixel electrode 190 of the thin film transistor array panel. The color filters 230 may represent one of the primary colors, such as red, green, and blue. Each of thecolor filters 230 includes a plurality ofdepressions depressions adjacent color filters 230 are divided at predetermined distances to form a plurality ofopenings 231. A portion of the surface of thesubstrate 210 is exposed through theopenings 231, and the exposed portion of the surface of thesubstrate 210 has a step for the surface of the color filters 230. - A
common electrode 270 may be made of a transparent conductive material, such as ITO and IZO, and is formed on the color filters 230. The surface step formed on thecommon electrode 270 depends on the surface step of thecolor filters 230 and the step between theopenings 231 and the surface of the color filters 230. - A
light blocking member 220, referred to as a black matrix, prevents light leakage and a plurality of sets ofprotrusions common electrode 270. Thelight blocking member 220 is located at or near theopenings 231. According to an embodiment of the invention, thelight blocking member 220 is thicker than thecolor filters 230 in order to reduce optical density. When thelight blocking member 220 is thin, such as, for example, thinner than thecolor filters 230, the leakage light is generated through thelight blocking member 220. - The sets of
protrusions depressions slope surfaces - A set of
protrusions pixel electrode 190 and include alower protrusion 72 a, acenter protrusion 71, and anupper protrusion 72 b. Each of theprotrusion adjacent cutouts pixel electrode 190 or between acutout pixel electrode 190. - Further, each of the
protrusions lower cutout 92 a or theupper cutout 92 b of thepixel electrode 190, and the distances between adjacent two of theprotrusions pixel electrode 190, which are parallel to each other, are substantially the same. Theprotrusions pixel electrode 190. - Each of the lower and
upper protrusions pixel electrode 190 to approximately lower or upper edge of thepixel electrode 190, and transverse and longitudinal portions extending from respective ends of the oblique portion along edges of thepixel electrode 190, overlapping the edges of thepixel electrode 190, and making obtuse angles with the oblique portion. - The
center protrusion 71 includes a central transverse portion extending approximately from the left edge of thepixel electrode 190 along thethird storage electrode 133 c, a pair of oblique portions extending from an end of the central transverse portion approximately to a right edge of the pixel electrode and forms obtuse angles with the central transverse portion, and a pair of terminal longitudinal portions extending from the ends of the respective oblique portions along the right edge of thepixel electrode 190, overlapping the right edge of thepixel electrode 190, and forming obtuse angles with the respective oblique portions. - The number of the
protrusions - Alignment layers 11 and 21 that may be homotropic are coated on inner surfaces of the
panels polarizers panels - The LCD may further include at least one retardation film (not shown), e.g., phase compensating sheet or compensator, for compensating the retardation of the
LC layer 3. The retardation film has birefringence and gives a retardation opposite to that given by theLC layer 3. The retardation film may include uniaxial or biaxial optical compensation film and may include a negative uniaxial compensation film. - The LCD may further include a backlight unit (not shown) supplying light to the
LC layer 3 through thepolarizers panels - The
LC layer 3 may have negative dielectric anisotropy in a range of approximately 3 to 8 and theLC molecules 310 in theLC layer 3 may be vertically aligned such that their long axes are substantially vertical to the surfaces of the alignment layers 11 and 21 in the absence of an electric field. At this time, because the surfaces of thealignments transistor array panel 100 and thecommon electrode panel 200 in the greater part, the long axes of theLC molecules 310 in theLC layer 3 are vertically aligned to the surfaces of the thin filmtransistor array panel 100 and thecommon electrode panel 200. However, theLC molecules 310 near thealignment layer 21 that are arranged on the slope surfaces 281 and 282 of theprotrusions alignment layer 21 depending on the slope angle of the slope surfaces 281 and 282 of theprotrusions - An electric field substantially perpendicular to the surfaces of the
panels common electrode 270 and a data voltage to thepixel electrodes 190. TheLC molecules 310 may change orientation in response to the electric field such that the long axes of theLC molecules 310 are perpendicular to the field direction. - In the absence of the electric field, the
LC molecules 310 are pre-tilted and the pre-tilt directions of theLC molecules 310 determine the tilt directions of theLC molecules 310 when the electric field is applied. Thus, for example, the tilt motion of theLC molecules 310 is rapidly tilted. - The depression of the
common electrode 270 near theprotrusions depressions depressions LC layer 3. Accordingly, theLC molecules 310 located near theprotrusions LC molecules 310 located far from theprotrusions LC molecules 310. - The
cutouts pixel electrodes 190 and the oblique edges of thepixel electrodes 190 distort the electric field so that the electric fields have a horizontal component. - The pre-tilted direction caused by the
protrusions depressions cutouts electrodes 190, and the edges of thepixel electrodes 190, distort the electric field to have a charge that is substantially perpendicular to the edges of thecutouts protrusions pixel electrodes 190. Accordingly, the LC molecules on each sub-area tilt in a direction by the horizontal component and the azimuthal distribution of the tilt directions are localized to four directions, thereby increasing the viewing angle of the LCD. The regions of theLC layer 3 having the same tilt direction is referred to as domain, and thecutouts protrusions - The side of the
storage electrodes cutouts pixel electrode 190 extend along with thecutouts pixel electrode 190, and the fringe field caused by thecutouts - A method of manufacturing a common electrode panel of the LCD shown in
FIG. 1 ,FIG. 2 ,FIG. 3 ,FIG. 4 , andFIG. 5 according to an embodiment of the invention is described in detail with reference toFIG. 6A andFIG. 6B .FIG. 6A andFIG. 6B are sectional views of a common electrode panel shown inFIG. 2 ,FIG. 3 , andFIG. 4 taken along the line IV-IV′. - Referring to
FIG. 6A , a negative photosensitive organic material having red pigments is coated on an insulatingsubstrate 210 to acolor filter 230 and a photo-mask 40 is aligned on thesubstrate 210. The photo-mask 40 has atransparent film 41 and anopaque film 42 formed on thetransparent film 41, and includes an opaque area where theopaque film 42 is wider than a predetermined or fixed value, a transmissive area where theopaque film 42 is not formed, and a translucent area of a slit type where the width and the interval of theopaque film 42 is less than a predetermined or fixed value. Portions of thecolor filter 230 facing the transmissive areas absorb the full energy of the light, while portions of thecolor filter 230 facing the translucent area partially absorb the light energy. Accordingly, thecolor filter 230 is developed, and the thickness of the portions of thecolor filter 230 facing the transmissive area is unchanged, e.g., full thickness, the portions facing the translucent areas have a reduced thickness to form a plurality ofdepressions color filter 230 facing the opaque area is removed. The hatched portions of thecolor filter 230 inFIG. 6A are portions of the color filter to be removed after developing. - After forming a
red color filter 230 with the above-described method, negative photosensitive organic materials respectively including green and blue pigments are sequentially coated and developed on the insulatingsubstrate 210 to form green andblue color filters 230, respectively. At this time, thecolor filters 230 for red, blue and green colors are formed at regular intervals to form a plurality ofopenings 231. - Referring to
FIG. 6 b, an ITO or IZO layer is subsequently deposited on thecolor filter 230 to form acommon electrode 270. Portions of thecommon electrode 270 may be depressed due to thedepressions common electrode 270 generate fringe fields. In this manufacturing method, patterning thecommon electrode 270 is omitted through the photolithography process, and the fringe field to form a plurality of domains may effectively be generated. Accordingly, the manufacturing methods may be simplified, and ITO etchant may prevent the color filters from damaging. - A positive photosensitive organic material containing black pigments is subsequently coated, and an exposure-
mask 50 is aligned on the insulatingsubstrate 210. The photo-mask 50 has atransparent film 51 and anopaque film 52 formed on thetransparent film 51, and includes an opaque area where theopaque film 52 is wider than a predetermined or fixed value, a transmissive area where theopaque film 42 is not formed, and a translucent area of a slit type where the width and the interval of theopaque film 42 is less than a predetermined or fixed value. - At this time, the opaque area and the translucent area are respectively aligned at the
depressions mask 50 and forms a blockinglight member 220 and a plurality ofprotrusions protrusions protrusions light member 220. According to an embodiment of the invention, the intervals and the widths of slits are determined such that the thicknesses of the blockinglight member 220 is the same as the thickness of the color filters 230. - A method of manufacturing the TFT array panel shown in
FIG. 1 ,FIG. 2 ,FIG. 3 ,FIG. 4 , andFIG. 5 according to an embodiment of the invention is described below in detail with reference toFIG. 7A ,FIG. 7B ,FIG. 8A , andFIG. 8B .FIG. 7A andFIG. 7B are sectional views of the TFT array panel shown inFIG. 1 andFIG. 3 ,FIG. 4 , andFIG. 5 .FIG. 8A andFIG. 8B are sectional views of the TFT array panel, respectively, showing the TFT array panel after the TFT array panel shown inFIG. 7A andFIG. 7B has subsequently undergone another manufacturing method. - Referring to
FIG. 1 ,FIG. 7A andFIG. 7B , a conductive layer of metal such as Al, Al alloy, Ag, Ag alloy, Cr, Mo, Mo alloy, Ti or Ta is sputtered on an insulatingsubstrate 110 and the substrate is wet or dry etched in sequence to form a plurality of gate lines 121 includinggate electrodes 124 and endportions 129, a plurality ofstorage electrode lines 131 including storage electrodes 133 a-133 d, and aconnection 133 e (the first mask). The gate lines 121 and thestorage electrode lines 131 may have a double layered structure that includes two films having different physical characteristics. One of the two films may be made of a low resistivity metal material including Al containing metal, Ag containing metal, and Cu containing metal to reduce signal delay or voltage drop in the gate lines 121 and the storage electrode lines 131. The other film is may be made of a material such as Mo containing metal, Cr, Ta or Ti, which has good physical, chemical, and electrical contact characteristics with other materials. - After the
gate insulating layer 140 is formed by a sequential deposition process such that the thickness of the gate insulating layer varies between approximately 1,500 to 5,000 Å, an intrinsic a—Si layer with thickness of between approximately 500 to 2,000 Å, and an extrinsic a—Si layer with thickness of between approximately 300 to 600 Å, wherein the extrinsic a—Si layer and the intrinsic a—Si layer are photo-etched to form a plurality of extrinsic semiconductor stripes and a plurality ofintrinsic semiconductor stripes 151 includingprojections 154 on the gate insulating layer 140 (the second mask). - A conductive film having a thickness of between approximately 1,500 to 3,000 Å is subsequently sequentially sputtered and patterned to form a plurality of
date lines 171 includingsource electrodes 173 and endportions 179, and a plurality ofdrain electrodes 175. The conductive film may be made of Cr, Mo, Mo alloy, Al, Al alloy, Ag, Ag alloy (the third mask). The conductive film may also be formed to have a double layered structure that includes two films having different physical characteristics. One of the two films may be made of a low resistivity metal material including Al containing metal, Ag containing metal, and Cu containing metal for reducing signal delay or voltage drop in the gate lines 121 and the storage electrode lines 131. The other film may be made of a material such as Mo containing metal, Cr, Ta or Ti, which has good physical, chemical, and electrical contact characteristics with other materials. - Portions of the extrinsic semiconductor stripes, which are not covered with the
data lines 171 and thedrain electrodes 175, are subsequently removed to complete a plurality ofohmic contact stripes 161 includingprojections 163 and a plurality ofohmic contact islands 165 and to expose portions of theintrinsic semiconductor stripes 151. Oxygen plasma treatment may be subsequently performed to stabilize the exposed surfaces of thesemiconductor stripes 151. - Referring to
FIG. 8A andFIG. 8B , apassivation layer 180 made of a photosensitive organic insulator is coated and exposed through a photo-mask 60 having a plurality ofopaque film 62, atransparent film 61, and slit parts (the fourth mask). Thepassivation layer 180 is subsequently developed to form a plurality ofcontact holes end portions 179 of thedata lines 171 and portions of thedrain electrodes 175, respectively, and to form a plurality ofcontact holes 181 exposing theend portions 129 of the gate lines 121. At this time, the slit parts are aligned to the sidewalls of the contact holes 181, 182 and 185 to form the sidewalls of the contact holes 181, 182 and 185 having stepped or slope profiles. - Next, a plurality of
pixel electrodes 190 and a plurality ofcontact assistants passivation layer 180 by sputtering and photo-etching an IZO or ITO layer with thickness of between approximately 400 to 500 Å, as shown inFIG. 4 andFIG. 5 (the fifth mask). - Five photo-masks are used in the above-described manufacturing method, however the invention is not limited to the above described five photo-masks. For example, according to another embodiment on the invention, only four photo-masks may be used to complete a thin film transistor array panel.
- In above-described embodiments of the LCD, although the photolithography of the
common electrode 270 of thecommon electrode panel 200 is omitted, the fringe field effect may be provided by making the depressions of thecommon electrode 270 corresponding to thedepressions common electrode 270, such as damage of color filters and formation of an overcoat covering the common electrode, may be removed. - Additionally, the protrusions formed in the photolithography process forming the blocking light member are used to divide the color filter into multi-domains and to control the domains, and the process of forming a protrusion may be omitted, which simplifies the manufacturing method of the LCD.
- Further, the LCD of vertical aligned (VA) type including the protrusions may reduce the response time of LC molecules. The response characteristics of the LCD may be improved by rapidly and partially controlling response time of VA type LCD. Also, the simplified manufacturing process of the LCD reduces manufacturing costs.
- It will be apparent to those skilled in the art that various modifications and variation can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (19)
1. A liquid crystal display, comprising:
a substrate;
a color filter having a depression and an opening and formed on the substrate;
a common electrode having a depression and formed on the color filter; and
a light blocking member formed on the common electrode and located at the depression of the common electrode.
2. The liquid crystal display of claim 1 , wherein the depression of the common electrode is formed by the depression and the opening of the color filter.
3. The liquid crystal display of claim 2 , wherein the light blocking member has a protrusion overlapping the depression of the color filter and protruded to an upside of the color filter.
4. The liquid crystal display panel of claim 3 , wherein the protrusion has a sloped surface.
5. The liquid crystal display of claim 2 , wherein the light blocking member includes a portion that overlaps the opening of the color filter and has substantially a same height as a height of the color filter.
6. The liquid crystal display of claim 1 , wherein the light blocking member comprises an organic material.
7. A liquid crystal display, comprising:
a first substrate;
a plurality of pixel electrodes, provided on the first substrate, including an opening;
a second substrate facing the first substrate;
a color filter, provided on the second substrate, having a depression facing the pixel electrodes and an opening facing the region between the pixel electrodes;
a common electrode, provided on the color filter, having a depression formed by the depression and the opening of the color filter; and
a light blocking member provided on the common electrode and located at the depression of the common electrode.
8. The liquid crystal display of claim 7 , wherein the light blocking member has a protrusion overlapping the depression of the color filter and protruded to an upside of the color filter.
9. The liquid crystal display panel of claim 8 , wherein the protrusion has a sloped surface.
10. The liquid crystal display of claim 7 , wherein the light blocking member includes a portion overlapping the opening of the color filter and has substantially a same height as a height of the color filter.
11. The liquid crystal display of claim 7 , further comprising:
a liquid crystal layer formed between the first and the second substrates, and having negative dielectric anisotropy.
12. The liquid crystal display of claim 11 , wherein negative dielectric anisotropy of the liquid crystal layer is in a range of approximately 3 to 8.
13. The liquid crystal display of claim 12 , wherein the light blocking member comprises an organic insulator having a dielectric constant that is less than or equal to the liquid crystal layer.
14. A method for manufacturing a liquid crystal display panel, comprising:
forming a color filter having a depression and an opening;
forming a common electrode on the color filter; and
forming a light blocking member on the common electrode,
wherein, the light blocking member is formed by a photolithography process using a photo-mask having an opaque area facing the depression of the color filter, a translucent area facing the opening of the color filter, and a transmissive area facing a portion of the color filter that does not include the depression or the opening.
15. The method of 14, further comprising:
forming the color filter by a photolithography process using a photo-mask having an opaque portion facing the opening of the color filter, a translucent portion facing the depression of the color filter, and a transmissive area facing a portion of the color filter that does not include the depression or the opening.
16. The method of 14, wherein the light blocking member has a protrusion overlapping the depression of the color filter and protruded to the upside of the color filter.
17. The liquid crystal display panel of claim 16 , wherein the protrusion has a sloped surface.
18. A liquid crystal display, comprising:
a substrate;
a color filter, provided on the substrate, having a depression and an opening;
a common electrode, provided on the color filter, having a depression formed by the depression and the opening of the color filter; and
a black matrix formed on the common electrode.
19. The liquid crystal display of claim 18 , wherein the black matrix is located at the depression and the opening of the color filter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/252,494 US20090040441A1 (en) | 2004-05-24 | 2008-10-16 | Liquid crystal display and manufacturing method thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0036784 | 2004-05-24 | ||
KR1020040036784A KR101080349B1 (en) | 2004-05-24 | 2004-05-24 | Liquid crystal display and manufacturing method thereof |
US11/134,268 US7453536B2 (en) | 2004-05-24 | 2005-05-23 | Liquid crystal display and manufacturing method thereof |
US12/252,494 US20090040441A1 (en) | 2004-05-24 | 2008-10-16 | Liquid crystal display and manufacturing method thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/134,268 Continuation US7453536B2 (en) | 2004-05-24 | 2005-05-23 | Liquid crystal display and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090040441A1 true US20090040441A1 (en) | 2009-02-12 |
Family
ID=35424775
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/134,268 Active 2025-11-01 US7453536B2 (en) | 2004-05-24 | 2005-05-23 | Liquid crystal display and manufacturing method thereof |
US12/252,494 Abandoned US20090040441A1 (en) | 2004-05-24 | 2008-10-16 | Liquid crystal display and manufacturing method thereof |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/134,268 Active 2025-11-01 US7453536B2 (en) | 2004-05-24 | 2005-05-23 | Liquid crystal display and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
US (2) | US7453536B2 (en) |
KR (1) | KR101080349B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110085103A1 (en) * | 2009-10-08 | 2011-04-14 | Seung-Suk Yang | Liquid crystal display |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7561240B2 (en) * | 1998-10-30 | 2009-07-14 | Samsung Electronics Co., Ltd. | Common electrode on substrate having non-depressed surface portion overlapping opening in pixel electrode on opposite substrate and depressed portion partially overlapping edge of the pixel electrode |
KR101080349B1 (en) * | 2004-05-24 | 2011-11-04 | 삼성전자주식회사 | Liquid crystal display and manufacturing method thereof |
KR100825381B1 (en) * | 2004-11-26 | 2008-04-29 | 삼성에스디아이 주식회사 | Liquid Crystal Display comprising OCB mode liquid crystal layer and fabrication method of the same |
TWI298866B (en) * | 2005-01-06 | 2008-07-11 | Au Optronics Corp | Thin film transistor array substrate and repairing method thereof |
JP5144055B2 (en) * | 2005-11-15 | 2013-02-13 | 三星電子株式会社 | Display substrate and display device having the same |
KR101115026B1 (en) * | 2006-01-10 | 2012-03-06 | 삼성전자주식회사 | Gate driver, thin film transistor substrate and liquid crystal display having the same |
TWI311206B (en) * | 2006-07-11 | 2009-06-21 | Au Optronics Corp | Fabricating method of color filter |
KR20080010159A (en) | 2006-07-26 | 2008-01-30 | 삼성전자주식회사 | Liquid crystal display |
US8077275B2 (en) * | 2008-05-09 | 2011-12-13 | Samsung Electronics Co., Ltd. | Display substrate and a method of manufacturing the same |
JP5659768B2 (en) * | 2010-12-16 | 2015-01-28 | 凸版印刷株式会社 | Oblique electric field liquid crystal display device |
KR20130131155A (en) * | 2012-05-23 | 2013-12-03 | 삼성디스플레이 주식회사 | Display pannel and method of manufacturing the same |
KR102304983B1 (en) * | 2015-04-28 | 2021-09-27 | 삼성디스플레이 주식회사 | Liquid crystal display device |
TWI567465B (en) * | 2016-05-06 | 2017-01-21 | 友達光電股份有限公司 | Display panel and method for fabricating array substrate thereof |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010007487A1 (en) * | 1999-11-01 | 2001-07-12 | Yea-Sun Yoon | Liquid crystal display having wide viewing angle |
US20020075436A1 (en) * | 2000-10-31 | 2002-06-20 | Masumi Kubo | Liquid crystal display device |
US20020090494A1 (en) * | 2001-01-09 | 2002-07-11 | Samsung Electronics Co., Ltd. | Substrate for liquid crystal display and method of fabricating the same |
US20020159012A1 (en) * | 2001-04-25 | 2002-10-31 | Tsutomu Yamada | Liquid crystal display |
US6583836B2 (en) * | 1999-12-28 | 2003-06-24 | Lg. Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device having a dielectric structure controlling alignment of the liquid crystal molecules |
US6621550B1 (en) * | 1996-10-04 | 2003-09-16 | Sony Corporation | Guest-host liquid crystal display device |
US20040004689A1 (en) * | 2001-07-05 | 2004-01-08 | Song Jang-Kun | Vertically aligned mode liquid crystal display |
US20040125276A1 (en) * | 2002-12-31 | 2004-07-01 | Hong Seung Ho | Liquid crystal display |
US20050140916A1 (en) * | 2003-12-08 | 2005-06-30 | Sharp Kabushiki Kaisha | Liquid crystal display device and fabrication method therefor |
US20050162598A1 (en) * | 2003-12-03 | 2005-07-28 | Nak-Cho Choi | Liquid crystal display and panel therefor |
US20060132678A1 (en) * | 2004-12-17 | 2006-06-22 | Sharp Kabushiki Kaisha | Color filter substrate and liquid crystal display device |
US7453536B2 (en) * | 2004-05-24 | 2008-11-18 | Samsung Electronics Co., Ltd. | Liquid crystal display and manufacturing method thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002196336A (en) * | 2000-12-25 | 2002-07-12 | Sanyo Electric Co Ltd | Liquid crystal display device |
JP2002258267A (en) * | 2000-12-26 | 2002-09-11 | Toray Ind Inc | Color filter and liquid crystal display using the same |
KR100772940B1 (en) * | 2001-12-05 | 2007-11-02 | 엘지.필립스 엘시디 주식회사 | A color filter for LCD and method for fabricating the same |
JP2003207771A (en) * | 2002-01-15 | 2003-07-25 | Kyocera Corp | Liquid crystal display and its manufacturing method |
-
2004
- 2004-05-24 KR KR1020040036784A patent/KR101080349B1/en active IP Right Grant
-
2005
- 2005-05-23 US US11/134,268 patent/US7453536B2/en active Active
-
2008
- 2008-10-16 US US12/252,494 patent/US20090040441A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621550B1 (en) * | 1996-10-04 | 2003-09-16 | Sony Corporation | Guest-host liquid crystal display device |
US6593982B2 (en) * | 1999-11-01 | 2003-07-15 | Samsung Electronics Co., Ltd. | Liquid crystal display with color filter having depressed portion for wide viewing angle |
US20010007487A1 (en) * | 1999-11-01 | 2001-07-12 | Yea-Sun Yoon | Liquid crystal display having wide viewing angle |
US6583836B2 (en) * | 1999-12-28 | 2003-06-24 | Lg. Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device having a dielectric structure controlling alignment of the liquid crystal molecules |
US20020075436A1 (en) * | 2000-10-31 | 2002-06-20 | Masumi Kubo | Liquid crystal display device |
US6866917B2 (en) * | 2001-01-09 | 2005-03-15 | Samsung Electronics Co., Ltd. | Substrate for liquid crystal display and method of fabricating the same |
US20020090494A1 (en) * | 2001-01-09 | 2002-07-11 | Samsung Electronics Co., Ltd. | Substrate for liquid crystal display and method of fabricating the same |
US20020159012A1 (en) * | 2001-04-25 | 2002-10-31 | Tsutomu Yamada | Liquid crystal display |
US20040004689A1 (en) * | 2001-07-05 | 2004-01-08 | Song Jang-Kun | Vertically aligned mode liquid crystal display |
US20040125276A1 (en) * | 2002-12-31 | 2004-07-01 | Hong Seung Ho | Liquid crystal display |
US20050162598A1 (en) * | 2003-12-03 | 2005-07-28 | Nak-Cho Choi | Liquid crystal display and panel therefor |
US20050140916A1 (en) * | 2003-12-08 | 2005-06-30 | Sharp Kabushiki Kaisha | Liquid crystal display device and fabrication method therefor |
US7453536B2 (en) * | 2004-05-24 | 2008-11-18 | Samsung Electronics Co., Ltd. | Liquid crystal display and manufacturing method thereof |
US20060132678A1 (en) * | 2004-12-17 | 2006-06-22 | Sharp Kabushiki Kaisha | Color filter substrate and liquid crystal display device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110085103A1 (en) * | 2009-10-08 | 2011-04-14 | Seung-Suk Yang | Liquid crystal display |
US8767147B2 (en) * | 2009-10-08 | 2014-07-01 | Samsung Display Co., Ltd. | Liquid crystal display wherein a first light blocking portion and a first colored portion extends generally along a gate line and generally covers the gate line and a thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
US20050264722A1 (en) | 2005-12-01 |
KR20050111867A (en) | 2005-11-29 |
US7453536B2 (en) | 2008-11-18 |
KR101080349B1 (en) | 2011-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7453536B2 (en) | Liquid crystal display and manufacturing method thereof | |
US8305507B2 (en) | Thin film transistor array panel having improved storage capacitance and manufacturing method thereof | |
US7110075B2 (en) | Liquid crystal display with domain-defining members and separate opening in the common electrode overlapping the gate or data lines | |
US8253913B2 (en) | Liquid crystal display and thin film transistor array panel therefor | |
US7292303B2 (en) | Liquid crystal display and panel therefor including regular and successive regular domain defining members | |
US7456921B2 (en) | Liquid crystal display | |
US7525623B2 (en) | Liquid crystal display | |
US20070182908A1 (en) | Liquid crystal display and thin film transistor array panel therefor | |
US20120154702A1 (en) | Liquid crystal display | |
US20070211201A1 (en) | Thin film panel | |
US20040233343A1 (en) | Liquid crystal display and thin film transistor array panel therefor | |
US7550329B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
US20130009159A1 (en) | Liquid crystal display and thin film transistor array panel usable with the liquid crystal display | |
US20060072064A1 (en) | Method of manufacturing a liquid crystal display and a mask for use in same | |
US7474363B2 (en) | Liquid crystal display and panel therefor | |
US20060131582A1 (en) | Thin film transistor array panel and manufacturing method thereof | |
US6864935B2 (en) | Liquid crystal display | |
US20050237461A1 (en) | Liquid crystal display and panel therefor | |
US7538842B2 (en) | Liquid crystal display panel with aligning members parallel to data lines that are either electrically floating or at substantially the same voltage as the data lines | |
US20060023151A1 (en) | Liquid crystal display and panel therefor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |