US20080283834A9 - Electrochromic display - Google Patents
Electrochromic display Download PDFInfo
- Publication number
- US20080283834A9 US20080283834A9 US11/344,798 US34479806A US2008283834A9 US 20080283834 A9 US20080283834 A9 US 20080283834A9 US 34479806 A US34479806 A US 34479806A US 2008283834 A9 US2008283834 A9 US 2008283834A9
- Authority
- US
- United States
- Prior art keywords
- electrode
- pixel
- tft
- display
- electrochromic display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/38—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using electrochromic devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
- G02F2001/1635—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor the pixel comprises active switching elements, e.g. TFT
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
Definitions
- the present invention relates to an electrochromic display that displays images by utilizing an electrochromic phenomenon.
- Electronic paper is getting more and more attention as a new display medium that combines the characteristics as paper, which is no need of information holding energy, can be securely saved, easily read, quickly readable and so on, and the characteristics as an electronic display capable of rewriting information and so on.
- a display principle in the electronic paper For example, it is a microcapsule type electrophoretic display method where capsules enclosing positively and negatively charged black and white particles are moved between electrodes. Further, it is a twist ball method where the direction of spherical particles colored in black and white are controlled. These methods perform display by utilizing a physical phenomenon.
- a drive circuit same as a drive circuit in a liquid crystal display is used for driving each electrode of an electrochromic display as it is also shown in Japanese Patent Laid-Open No. 2002-258327 publication.
- This is a constitution where one TFT is used for each electrode, a gate electrode of the TFT is connected to a gate wire, a source electrode of the TFT is connected to a source wire, and a drain electrode of the TFT is connected to a pixel electrode, in which a charge quantity is controlled by source voltage.
- the liquid crystal type drive circuit is directly used in the electrochromic display, a long time is required to accumulate necessary charge quantity in the pixel electrodes for oxidation-reduction reaction because the circuit depends on current capability of a source driver and TFT.
- the second object of the present invention is to provide an electrochromic display of higher response speed and high definition where the constitution of a driver for TFTs is devised.
- each pixel has: a TFT connected to a gate wire and a source wire; and a TFT made up of a gate electrode connected to the drain electrode of the foregoing TFT, a source electrode connected to a power supply wire, and a drain electrode connected to a pixel electrode. Since the organic EL type drive circuit has only one power supply wire, charge can be saved in the pixel electrode but it is difficult to reduce charge.
- the third object of the present invention is to provide an electrochromic display of high-speed response and high definition where writing and deletion to pixels can be easily performed and rewrite time is shortened.
- the electrochromic display of the present invention includes a plurality of pixels each of which is made up of a TFT, a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which the size of the TFT is not less than 30% of the size of the pixel.
- the electrochromic display includes a plurality of pixels each of which is made up of a TFT, a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which one of a source electrode and a drain electrode of the TFT is formed in an approximately rod shape, and the other electrode is formed in a shape surrounding the one electrode.
- the TFT has a source electrode having U-shaped concave portions and a drain electrode arranged between the U-shaped concave portions.
- the electrochromic display includes a plurality of pixels each of which is made up of a TFT, a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which a current driving circuit is formed in each pixel.
- the current driving circuit includes switching means and potential control means, and furthermore, the current driving circuit includes the switching means, the potential control means, rewrite specifying means and power source breaking means.
- the electrochromic display includes a plurality of pixels each of which is made up of a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which the pixel is provided with independent deleting means and writing means.
- the pixel includes two switching means and two rewriting means.
- the electrochromic display includes a plurality of pixels each of which is made up of a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which the pixel is provided with independent two gate wires, two switching TFTs severally connected to the gate wires via a gate electrode, source wires connected to the source electrodes of the switching TFTs, two rewriting TFTs severally connected to the drain electrodes of the switching TFTs via a gate electrode, and two power supply wires severally connected to the source electrodes of the rewriting TFTs, and the drain electrodes of the rewriting TFTs are connected to the pixel electrode.
- FIG. 1 shows a cross-sectional schematic view of a pixel of an electrochromic display of an embodiment of the present invention.
- FIG. 2 shows a plan view of a pixel in an electrochromic display of an embodiment of the present invention.
- FIG. 3 shows a circuit diagram of a pixel in an electrochromic display of an embodiment of the present invention.
- FIG. 4 shows a circuit diagram of a pixel in another embodiment.
- FIG. 5 shows a circuit diagram of a pixel in another embodiment.
- FIG. 6 shows a circuit diagram of a pixel in another embodiment.
- FIG. 7 shows a circuit diagram of a pixel in another embodiment.
- FIG. 8 shows a circuit diagram of a pixel in another embodiment.
- FIG. 9 is a circuit diagram of each pixel of the present invention.
- FIG. 10 is a timing chart of an embodiment of the present invention.
- the embodiments show an electrochromic display of about 8 inches to 10 inches and having a pixel pitch of 80 to 100 ⁇ m.
- FIG. 1 shows the cross-sectional schematic view of a pixel in an electrochromic display of Embodiment 1
- FIG. 2 shows the plan view of the pixel
- FIG. 3 is a view schematically showing the circuit diagram of the pixel. Note that FIG. 1 and FIG. 2 has different size, shape and the like of each constituent element.
- the electrochromic display is constituted by an array-side substrate 10 , a color filter-side substrate 50 , and an electrolyte layer 80 sandwiched between the both substrates.
- a plurality of gate wires 12 and a plurality of source wires 13 are wired in a matrix state on a glass substrate 11 .
- a region surrounded by the gate wires 12 and the source wires 13 corresponds to one pixel.
- a switching TFT 14 , a pixel electrode 15 connected to the TFT 14 , and an electrochromic layer 30 stacked on the pixel electrode 15 are formed on each pixel.
- a plurality of the gate wires 12 are formed on the glass substrate 11 by stacking Al and Mo. Further, the gate electrode 16 of the TFT 14 is simultaneously formed when forming the gate wires 12 .
- the gate electrode 16 has a size having about 65% of one pixel area, as shown in FIG. 2 , and its shape is in an oblong rectangular shape approximately similar to the shape of the pixel. It is preferable that the switching TFT 14 be capable of flowing as large current as possible when it is turned to ON state for the purpose of performing oxidation-reduction reaction. Therefore, the gate electrode 16 is formed as large as possible.
- a gate insulation film 17 made of SiN x is stacked on the glass substrate 11 , and the gate insulation film 17 covers the gate wires 12 and the gate electrode 16 .
- An amorphous silicon (hereinafter, referred to as a-Si) layer is stacked on the gate insulation film 17 , and only a part of the layer that falls in the semiconductor layer 18 of the TFT 14 is left by a photolithography method (shown in a broken line in FIG. 2 ). At this point, the semiconductor layer 18 is in a shape covering a major part of the gate electrode 16 .
- a metal layer where Al and Mo are stacked is formed on the gate insulation film 17 and the semiconductor layer 18 , the metal layer is patterned by the photolithography method to form the source wires 13 , the source electrode 19 and the drain electrodes 20 of the TFT 14 .
- the source wires 13 are provided orthogonal to the gate wires 12 , and the source electrodes 19 are protruded from the source wires 13 at an area near the crossing portion with the gate wire 12 .
- the periphery of the source electrode 19 is in a shape taken along the periphery of the gate electrode 16 and also in a shape having U-shaped concave portions extending along the source wires 13 , and it is in a shape having two concave portions in FIG. 2 .
- the drain electrode 20 is in a shape having thin and long rod-shaped convex portions that are located between the U-shaped concave portions of the source electrode 13 , and has two convex portions so as to correspond to the concave portions of the source electrode 19 .
- the switching TFT 14 be capable of flowing as large current as possible when it is turned to ON state for the purpose of performing oxidation-reduction reaction.
- the TFT 14 using a-Si in the semiconductor layer 18 has difficulty of allowing current to flow therein comparing to a TFT using polysilicon despite advantages such as easiness of manufacturing comparing to the TFT using polysilicon, so it is necessary to make the TFT 14 as large as possible.
- a channel length may be shorter and a channel width may be wider in order to allow current to flow more smoothly, making the TFT 14 as large as possible to widen the channel width is more effective because there is a limitation on manufacturing engineering in shortening the channel length.
- the size of TFT may be no less than half the area of one pixel region, more preferably it may be no less than 60% of the area.
- the shapes of the source electrode 19 and the drain electrode 20 are devised to allow current to flow as much as possible between source/drain when the TFT 14 becomes ON state.
- the gate electrode 16 of the TFT 14 is formed in an oblong rectangular shape corresponding to the shape of the pixel to make the source electrode 19 and the drain electrode 20 long, and the channel width can be wider in a limited space.
- the source electrode 19 is located on the both sides of the drain electrode 20 to make the channel width become twice, and thus the channel width can be made larger effectively in a small space.
- An insulation film 21 is formed so as to cover the source wires 13 and the TFT 14 .
- the insulation film 21 consists of two layers where a lower layer is formed of inorganic insulation film such as SiN x and an upper layer is formed of organic insulation film such as photosensitive acrylic resin. Then, countless concavity and convexity (not shown) are formed on the organic insulation film. The reason why the concavity and convexity are formed on the surface of the insulation film 21 is to form a pixel electrode reflection type electrochromic display that reflects outside light on the pixel electrode 15 by using a reflective electrode material made of metal for the material of the pixel electrode 15 (described later).
- coloring agent is contained in the electrolyte layer 80 in order to improve contrast.
- White particles for coloring are used in the coloring agent, and inorganic particles of calcium oxide, magnesium oxide, titanium dioxide or the like are specifically cited. In using such inorganic particles, they must be mixed into the electrolyte layer 80 at a fixed ratio. Further, in using such electrolyte layer 80 , certain thickness of the electrolyte layer 80 is required because good contrast cannot be secured if the electrolyte layer 80 is made thin too much. Furthermore, when the electrolyte layer 80 is made thinner, there is a danger that short circuit will occur between the array-side substrate 10 and the color filter-side substrate 50 due to the inorganic particles.
- the pixel electrode reflection type electrochromic display does not have the danger of the above-described problem, a gap between the array-side substrate 10 and the color filter-side substrate 50 can be made narrower.
- the size and the application of the electrochromic display are often limited in a way to electronic books, advertisement on the street, or the like, and an observing position in such a case is also limited in a way. Therefore, it is better to enhance contrast in a specific direction rather than securing a wide view angle by using coloring agent or the like.
- the pixel electrode reflection type electrochromic display in which the concavity and convexity are provided on a pixel electrode surface and a reflecting direction of light is focused in a fixed direction, contrast in an arbitrary direction can be enhanced.
- the tilt angle of the concavity and convexity formed on the pixel electrode surface is about 10° in order to focus light in a fixed direction.
- a contact hole 22 is formed in the insulation film 21 .
- a reflective electrode material made of Al is stacked on the insulation film 21 , the reflective electrode material is patterned by the photolithography method to form the pixel electrode 15 .
- Ag or Al is specifically preferable for the reflective electrode material from the viewpoint of reflection efficiency, conductivity, or the like.
- the drain electrode 20 of the TFT 14 is connected to the pixel electrode 15 via the contact hole 22 .
- the surface of the pixel electrode 15 becomes uneven due to the effect of the insulation film 21 located under the electrode.
- the area of the pixel electrode 15 is slightly smaller than the area of one pixel, and a region that can be used for display and a region capable of reflecting light are made wider by increasing the area of the pixel electrode 15 .
- the end portions of the pixel electrode 15 may be partially overlapped with the gate wire 12 or the source wire 13 when seen on a plan view as long as they do not contact an adjacent pixel electrode 15 .
- Short circuit prevention means for preventing adjacent pixel electrodes 15 and adjacent electrochromic layers 30 from short-circuiting with each other is provided around the pixel electrode 15 . It is specifically a barrier 23 formed so as to surround the pixel electrode 15 .
- the barrier 23 is formed of Novolac resin on the insulation film 21 on the gate wires 12 and the source wires 13 . Its height is approximately the same as the thickness of the electrochromic layer 30 , which is about 10 ⁇ m in this embodiment.
- a distance between adjacent pixels that is, the distance between the pixel electrode 15 and the pixel electrode 15 in this case becomes about 5 ⁇ m to 30 ⁇ m, and there is a higher chance of causing short circuit.
- the short circuit prevention means in this manner, short circuit among adjacent pixel electrodes 15 can be prevented, and the electrochromic layer 30 formed on the pixel electrode 15 is prevented from short-circuiting with an adjacent electrochromic layer 30 .
- the barrier 23 may be any type as long as it is an insulator, and it may be formed of organic resin or inorganic resin other than Novolac resin.
- a groove may be formed in the insulation film 21 at a boundary area to an adjacent pixel, for example.
- the electrochromic layer 30 is formed in a region on the pixel electrode 15 , which is surrounded by the barrier 23 .
- the electrochromic layer 30 one that is made of a material indicating coloring and erasing by electrochemical oxidation or reduction reaction and used in a general electrochromic display may be used.
- tungsten oxide, titanium oxide, molybdenum oxide, iridium oxide, nickel oxide, vanadium oxide, tin nitride, indium nitride, polythiophene, polypyrrole, metal phthalocyanine, viologen and the like are cited.
- one having a nano-particle thin film state material as described in International Publication No. 97/35227 or the like may be used.
- nano-particle thin film state material By using a nano-particle thin film state material, oxidation-reduction reaction can be accelerated to increase display response speed or to improve contrast.
- the nano-particle thin film state material is used in this embodiment as well, and a nano-particle thin film made of SnO 2 to which Sb is doped is specifically used in this embodiment.
- the electrochromic layer 30 may be directly formed on the pixel electrode 15 by a widely known method such as a vacuum evaporation method and a sputtering method, for example, nano particles made of SnO 2 to which Sb is doped are formed first on each pixel electrode 15 by a screen printing method in the forming method of the nano-particle thin film in this embodiment. Productivity can be improved by the screen printing method. Further, since the barrier 23 surrounding the periphery of the pixel electrode 15 is formed, it is possible to form the nano-particle thin film highly accurately on the pixel electrode 15 by utilizing the barrier 23 .
- the forming method of the nano-particle thin film is done by the screen printing method, the height, area or the like of the nano-particle thin film can be formed very accurately in a space formed by the barrier 23 on the pixel electrode 15 . Then, after performing a process such as sintering the nano-particle thin film and allowing the film to adsorb oxidized or reduced compound, the electrochromic layer 30 is formed.
- a color filter 52 provided corresponding to each pixel, a counter electrode 53 , and an electrochromic layer 54 stacked on the counter electrode 53 are formed on a glass substrate 51 .
- Black matrix 55 is formed on the glass substrate 51 so as to sectionalize each pixel, and the color filter 52 corresponding to each pixel is formed at the opening of the black matrix 55 .
- the color filter 52 consists of three colors of red (R), green (G) and blue (B), for example, and one color out of the three colors is arranged corresponding to each pixel.
- the electrochromic layer 54 is formed on the counter electrode 53 .
- the electrochromic layer 54 is formed by a layer formed of the nano-particle thin film similar to the array-side substrate 10 .
- a nano-particle thin film made of TiO 2 is specifically used in this embodiment.
- the electrochromic layer 54 is formed after performing a process such as sintering the nano-particle thin film or allowing the film to adsorb oxidized or reduced compound. Then, the array-side substrate 10 and the color filter-side substrate 50 are arranged in a facing manner.
- the electrolyte layer 80 serves a role to carry charge by ions contained in solvent.
- the electrolyte layer 80 one used in a general electrochromic display may be used, and its constituent material and forming method are not particularly limited. It also may be a liquid electrolyte layer, a gel system electrolyte layer, or a solid system electrolyte layer.
- Solvent into which electrolyte is dissolved can be used as the liquid electrolyte layer.
- solvent water, propylene carbonate, ethylene carbonate, y-butyrolactone and the like are cited.
- electrolyte sulfuric acid, hydrochloric acid and the like are cited as acids, and sodium hydroxide, potassium hydroxide, lithium hydroxide or the like is cited as alkalis.
- salts inorganic ion salt, quaternary ammonium salt, cyclic quaternary ammonium salt or the like of alkaline (earth) metal salt such as lithium perchlorate, sodium perchlorate and silver perchlorate is cited.
- gel system electrolyte one produced by mixing and polymerizing acetonitrile, ethylene carbonate, propylene carbonate or their mixture with polymer such as polyacrylonitrile and polyacrylamide is specifically cited.
- polymer side chain such as polyethyleneoxide having salt such as sulfone imide salt, alkylimidazolium salt and tetra-cyanoquinodimethane salt is cited.
- a sealing material is coated on the peripheral portion of the array-side substrate 10 or the color filter-side substrate 50 .
- the sealing material is coated so as to form an injection port for injecting the material of the electrolyte layer 80 .
- the both substrates are bonded together, and the material of the electrolyte layer 80 is injected into a fixed gap generated between the both substrates via the injection port.
- the sealing material is coated such that the fixed gap generated between the both substrates becomes the layer thickness of the electrolyte layer 80 (described later).
- an injection method of the material of the electrolyte layer 80 a widely known method such as a vacuum injection method may be used, for example.
- the thickness of the electrolyte layer 80 is between about 5 ⁇ m and about 50 ⁇ m, and it is preferably between about 7 ⁇ m and about 30 ⁇ m. If the thickness of the electrolyte layer 80 becomes too thick, there is a danger that an observer will recognize even the display state of an adjacent pixel through one pixel when he/she observes the display state, so it is preferable that the thickness of the electrolyte layer 80 be as thin as possible. On the contrary, if the thickness of the electrolyte layer 80 becomes too thin, its role may become insufficient, the array-side substrate 10 may highly likely short-circuit with the color filter-side substrate 50 due to a foreign object, or a problem on manufacturing engineering is considered, so that the above-described layer thickness is appropriate.
- spherical spacers are sprayed on the array-side substrate 10 .
- the thickness of the electrolyte layer 80 can be maintained at a fixed thickness over the entire electrochromic display, stable display can be performed, and the spraying can be performed easier than forming columnar spacers on the array-side substrate 10 .
- the number of the spherical spacers it is not necessary to allow spacers to exist in several numbers per one pixel like spherical spacers for strictly controlling a cell gap in a liquid crystal display, for example, but they may be sprayed in one spacer per a plurality of pixels. Therefore, the spherical spacers rarely affect display.
- a gate wire drive circuit and a source wire drive circuit (both are not shown) for selecting each pixel are respectively provided at the end portion side of the gate wire 12 and the end portion side of the source wire 13 , and a signal control section (not shown) for controlling the gate wire drive circuit and the source wire drive circuit is provided.
- the gate wire drive circuit controlled by the signal control section applies a gate signal to a predetermined gate wire 12 .
- the gate signal is applied to the gate electrode 16 of the switching TFT 14 to turn the TFT 14 to ON state.
- the source signal applied to a predetermined source wire 13 is applied from the source electrode 19 of the TFT 14 to the pixel electrode 15 via the drain electrode 20 , and display is performed by a display element 90 .
- FIG. 4 , FIG. 5 , FIG. 6 , FIG. 7 and FIG. 8 schematically show circuit diagrams of the electrochromic display of Embodiment 2. Note that the same reference numerals are applied to the same parts as those of FIG. 3 .
- FIG. 4 unlike FIG. 3 where display is performed by a voltage drive circuit, is a display performing display by a current drive circuit.
- a power supply wire (Vdd) formed along the source wire 13 and a TFT 101 for supplying current to the display element 90 from the power supply wire (Vdd) are formed in each pixel.
- the gate electrode, the source electrode and the drain electrode of the TFT 101 are respectively connected to the drain electrode 20 of the TFT 14 , the power supply wire (Vdd) and the display element 90 .
- Such current drive circuit can supply larger current to the display element 90 than the one in FIG. 3 , and oxidation-reduction reaction can be proceeded at higher speed.
- power supply sorted in two types such as 10V for black display and 0V for white display should be performed to the power supply wire (Vdd).
- Vdd power supply wire
- a frame rate gradation method is suitable when performing gradation display.
- both the TFT 14 and the TFT 101 are formed of an N-type TFT, that is, a TFT using electrons as carriers, so that a-Si can be used for the semiconductor layer, and they can be formed in the same process. Further, it is not necessary to form the power supply wire (Vdd) along the source wire 13 , but may be formed along the gate wire 12 , and the power supply wire may be formed in any direction as long as it can supply power to each pixel.
- FIG. 5 shows the current drive circuit as shown in the above-described embodiment, where switching means and potential control means are provided for each pixel.
- an N-type switching TFT 14 is used as the switching means and CMOS 102 made up of a P-type TFT and an N-type TFT is used as the potential control means.
- the input terminal of the CMOS 102 is connected to the drain electrode 20 of the TFT 14 , and the output terminal of the CMOS 102 is connected to the display element 90 .
- oxidation-reduction reaction can be proceeded at higher speed, and gradation display by a voltage gradation method also can be performed by the potential control means.
- CMOS 102 since the CMOS 102 is used in this embodiment, polysilicon will be used in the semiconductor layer of the TFT. Accordingly, it exerts effects such that power consumption is reduced and peripheral drive circuits can be formed integrally. Furthermore, the semiconductor layer 18 of the switching TFT 14 can be formed by polysilicon as well.
- FIG. 6 shows the circuit where the switching means and the potential control means are provided in each pixel in the same manner as FIG. 5 .
- FIG. 5 uses two of P-type or N-type TFTs 103 as the potential control means instead of the CMOS 102 (the figure shows N-type TFT). Therefore, the semiconductor layer of the TFTs can be manufactured by using a-Si without using polysilicon, and thus an effect such as easiness of manufacturing is exerted. Since all the TFTs formed for each pixel are N-type TFTs, a-Si may be used in their semiconductor layers, so that the increase of manufacturing processes can be suppressed comparing to the case where P-type and N-type TFTs are mixed in each pixel.
- FIG. 7 shows a circuit where switching means, rewrite specifying means, potential control means and power source breaking means are provided for the current drive circuit of the above-described embodiment.
- the switching TFT 14 is used as the switching means
- an N-type TFT 104 and a capacitor 105 are used as the rewrite specifying means
- CMOS 106 is used as the potential control means
- two N-type TFTs 107 are used as the power breaking means.
- the gate electrode of the TFT 104 is connected to a word wire 108 traveling parallelly with the gate wire 12
- the source electrode of the TFT 104 is connected to the source wire 13
- the drain electrode of the TFT 104 is connected to the capacitor 105 and gate electrodes of the TFTs 107 .
- the source electrodes of the TFTs 107 are severally connected to either one of the two power supply wires (Vdd)(Vss).
- the drain electrodes of the TFTs 107 are severally connected to either one of the P-type TFT and N-type TFT which constitute the CMOS 106 , the input terminal of the CMOS 106 is connected to the drain electrode 20 of the TFT 14 , and the output terminal of the CMOS 106 is connected to the display element 90 .
- the electrochromic display has a so-called memory capability of display, if the display of corresponding pixels is the same as the one in the previous pixel selection, power consumption is reduced when such display is maintained as it is. Consequently, by providing the rewrite specifying means and the power blocking means for each pixel, the rewrite specifying means specifies that no rewrite is needed and the power blocking means blocks supply of power if there is no change between the display state in the previous selection and the display state of the current selection. The rewrite specifying means specifies that rewrite is needed and the power blocking means does not block supply of power if there is a change between the display state in the previous selection and the display state of the current selection. With this method, power consumption in the electrochromic display can be reduced. Note that polysilicon will be used in the semiconductor layers of the TFTs because the CMOS 106 is also used in this embodiment.
- FIG. 8 shows a current drive circuit where the switching means, the rewrite specifying means, the potential control means and the power source breaking means are provided in each pixel similar to FIG. 7 .
- a P-type or an N-type TFT 109 is used as the potential control means instead of the CMOS 106 (the figure shows N-type). Therefore, the semiconductor layer of the TFTs can be manufactured by using a-Si without using polysilicon, and thus an effect such as easiness of manufacturing is exerted.
- a-Si may be used in their semiconductor layers, so that the increase of manufacturing processes can be suppressed comparing to the case where P-type and N-type TFTs are mixed in each pixel.
- the power supply wires (Vdd)(Vss) are shown in the circuit diagrams shown in FIG. 4 to FIG. 8 , and the end portions of the power supply wires are connected to the power source.
- the both ends of the power supply wire may be connected to the power source or adjacent power supply wires are connected to each other via one or more connection points to prevent the power supply capability from being reduced.
- connection points are formed in a ladder shape, power can be supplied even if one wire out of the power supply wires is broken.
- FIG. 9 is the circuit diagram schematically showing the drive circuit provided for each pixel.
- Each pixel is provided with two switching means and two rewriting means for supplying or stopping current to the pixel electrodes 15 .
- an N-type TFT 31 as switching means A and an N-type TFT 32 as switching means B are used.
- an N-type TFT 33 as rewriting means C and an N-type TFT 34 as rewriting means D are used.
- Two independent gate wires 35 , 36 are severally connected to each pixel, the gate electrode of the switching TFT 31 is connected to the gate wire 35 , and the gate electrode of the TFT 32 is connected to the gate wire 36 .
- a source wire 37 is connected to each pixel, and the source electrode of the TFT 31 and the source electrode of the TFT 32 are connected to the source wire 37 .
- the drain electrode of the TFT 31 and the gate electrode of the rewriting TFT 33 are connected to each other and the drain electrode of the TFT 32 and the gate electrode of the rewriting TFT 34 are connected to each other.
- Two independent power supply wires Vss, Vdd are connected to each pixel
- the source electrode of the TFT 33 is connected to the power supply wire Vss
- the source electrode of the TFT 34 is connected to the power supply wire Vdd.
- the drain electrode of the TFT 33 and the drain electrode of the TFT 34 are connected to the pixel electrode 15 .
- the TFT 31 becomes ON state. Then, the state of the TFT 33 is changed by data signals supplied from the source wire 37 , and current from the power supply wire Vss is controlled. Furthermore, the TFT 32 becomes ON state when the gate wire 36 is scanned, the state of the TFT 34 is changed by data signals supplied from the source wire 37 , and current from the power supply wire Vdd is controlled.
- a storage capacitor 38 is formed between the power supply wire Vss and the gate electrode side of the TFT 33
- a storage capacitor 39 is formed between the power supply wire Vdd and the gate electrode side of the TFT 34 , and the circuit is constituted to be capable of holding charge for a certain period even after scanning the gate wire.
- the number of gradations is set to four gradations, complete writing (deletion) is not performed in only one frame, but maximum three frames are used as a writing (deletion) enable period to perform complete writing (deletion).
- (a) shows a case where the display state is changed from black display to white display using the deleting means.
- the gate wire 35 When the gate wire 35 is scanned in the second frame, the foregoing signal for supplying enough quantity of current for turning black to gray, which is lightened from black by 33%, is allowed to flow from the source wire 37 to the pixel electrodes 15 , the signal controls the TFT 33 to adjust the current from the power supply wire Vss, and the display state of the pixels is changed to gray display that has been lightened from the gray display of the first frame by 33% (gray that has been lightened from black by 66%).
- the gate wire 36 When the gate wire 36 is scanned at this point, the source wire 37 still does not supply a signal for starting writing. By doing this, the display state is changed from black display to white display in the third frame. Note that it is not necessary that display is controlled to be lightened at an equal gap like 33%.
- (b) shows a case of performing gray display where display is lightened from black by 66% using the deleting means.
- an object gray display state is realized by performing the same control as the first and second frames in the case of (a).
- (c) shows a case where the display state is changed from white display to black display using the writing means.
- a signal for performing deletion is not supplied from the source wire 37 .
- the gate wire 36 is scanned, a signal for supplying enough quantity of current for turning white to gray, which is darkened from white by 33%, is allowed to flow from the source wire 37 to the pixel electrodes 15 , the signal controls the TFT 34 to adjust the current from the power supply wire Vdd, and the display state of the pixels is changed from white display to gray display (gray that has been darkened from white by 33%).
- the source wire 37 does not supply a signal for starting writing.
- the signal for supplying enough quantity of current for turning the display to gray which is darkened from the foregoing gray by 33%, is allowed to flow from the source wire 37 to the pixel electrodes 15 , the signal controls the TFT 34 to adjust the current from the power supply wire Vdd, and the display state of the pixels is changed to gray display, which has been darkened from the gray display of the first frame by 33%, (gray that has been darkened from white by 66%). By doing this, the display state is changed from white display to black display in the third frame.
- (d) shows a case of performing the gray display that has been darkened by 66% from white display using the writing means.
- an object gray display state is realized by performing the same control as the first and second frames in the case of (c).
- the electrochromic display has a so-called memory capability of display, if the display of corresponding pixels is the same as the one in the previous pixel selection, power consumption is reduced when such display is maintained as it is (this is shown as a memory state in FIG. 10 ). So, in the case of (a), since white display is continued in the fourth and further frames, the source wire 37 does not supply a signal for changing the display state when the gate wires 35 , 36 are scanned. Such signal supply from the source wire 37 can be realized by performing comparison with a previous frame by using a frame memory installed in the display, and by performing signal generation processing based on its comparison result, for example.
- the writing (deletion) may be completed only by one frame.
- insulative substrates such as a plastic substrate may be used other than the glass substrate 11 .
- the insulative substrate may be film state having flexibility.
- the electrochromic display of the present invention a large TFT is formed and a wide channel width can be secured in one pixel, and thus it is possible to allow very large current to flow. Further, the current drive circuit is formed in each pixel and larger current can be allowed to flow. Therefore, oxidation-reduction reaction in the electrochromic phenomenon can be proceeded at a higher rate, and an electrochromic display capable of high-speed response can be provided.
- the deleting means and the writing means are independently provided for each pixel, and thus writing and deleting can be performed independently.
- the means severally include the power supply wire, so that charge can be supplied to the pixel electrode in a short time and thus an electrochromic display capable of high-speed response can be provided.
- each pixel includes two rewriting means, writing and deleting can be performed independently, so that charge can be supplied to the pixel electrode in a short time and thus an electrochromic display capable of high-speed response can be provided.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
Description
- 1. Field
- The present invention relates to an electrochromic display that displays images by utilizing an electrochromic phenomenon.
- 2. Description of the Related Art
- Electronic paper is getting more and more attention as a new display medium that combines the characteristics as paper, which is no need of information holding energy, can be securely saved, easily read, quickly readable and so on, and the characteristics as an electronic display capable of rewriting information and so on.
- Various types are known as a display principle in the electronic paper. For example, it is a microcapsule type electrophoretic display method where capsules enclosing positively and negatively charged black and white particles are moved between electrodes. Further, it is a twist ball method where the direction of spherical particles colored in black and white are controlled. These methods perform display by utilizing a physical phenomenon.
- On the other hand, there is known a method that performs display by utilizing a chemical phenomenon. Among others, one utilizing an electrochromic phenomenon is known where voltage is applied between electrodes to cause coloring or deletion by oxidation-reduction reaction. This is described in Japanese Patent Laid-Open No. 2002-258327 publication, for example.
- A drive circuit same as a drive circuit in a liquid crystal display is used for driving each electrode of an electrochromic display as it is also shown in Japanese Patent Laid-Open No. 2002-258327 publication. This is a constitution where one TFT is used for each electrode, a gate electrode of the TFT is connected to a gate wire, a source electrode of the TFT is connected to a source wire, and a drain electrode of the TFT is connected to a pixel electrode, in which a charge quantity is controlled by source voltage. If the liquid crystal type drive circuit is directly used in the electrochromic display, a long time is required to accumulate necessary charge quantity in the pixel electrodes for oxidation-reduction reaction because the circuit depends on current capability of a source driver and TFT. Therefore, to increase response speed of display, it is necessary to proceed oxidation-reduction reaction in the electrochromic phenomenon in higher speed, and it is preferable that switching TFTs be capable of flowing as large current as possible when it is turned to ON state because charge quantity necessary for oxidation-reduction reaction can be supplied in a short time. Consequently, it is the first object of the present invention to provide an electrochromic display of high-speed response and high definition where TFTs are formed as large as possible to increase ON current.
- Further, since the size of TFT that can be formed in one pixel is limited even if the size of TFT is made larger to increase the response speed of the electrochromic display, improving effect of response speed is limited only by making the size of TFT larger. In addition, use of high performance TFT drivers cause an increase of manufacturing cost. Thus, the second object of the present invention is to provide an electrochromic display of higher response speed and high definition where the constitution of a driver for TFTs is devised.
- Furthermore, as the drive circuit for driving each pixel of the electrochromic display, a drive circuit generally used in an organic EL display could be used as shown in Japanese Patent Laid-Open No. 2002-108252 publication. Its constitution is that each pixel has: a TFT connected to a gate wire and a source wire; and a TFT made up of a gate electrode connected to the drain electrode of the foregoing TFT, a source electrode connected to a power supply wire, and a drain electrode connected to a pixel electrode. Since the organic EL type drive circuit has only one power supply wire, charge can be saved in the pixel electrode but it is difficult to reduce charge. In other words, a display state can be changed from white display to black display, but it is difficult to change the display state from black display to white display. This is because means for changing electric potential of the power supply wire or the like is necessary for the case of saving charge and reducing charge. Consequently, the third object of the present invention is to provide an electrochromic display of high-speed response and high definition where writing and deletion to pixels can be easily performed and rewrite time is shortened.
- To solve the above-described problems, the electrochromic display of the present invention includes a plurality of pixels each of which is made up of a TFT, a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which the size of the TFT is not less than 30% of the size of the pixel.
- Further, the electrochromic display according to another aspect of the present invention includes a plurality of pixels each of which is made up of a TFT, a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which one of a source electrode and a drain electrode of the TFT is formed in an approximately rod shape, and the other electrode is formed in a shape surrounding the one electrode. Further, the TFT has a source electrode having U-shaped concave portions and a drain electrode arranged between the U-shaped concave portions.
- Furthermore, the electrochromic display according to another aspect of the present invention includes a plurality of pixels each of which is made up of a TFT, a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which a current driving circuit is formed in each pixel. Further, the current driving circuit includes switching means and potential control means, and furthermore, the current driving circuit includes the switching means, the potential control means, rewrite specifying means and power source breaking means.
- Furthermore, the electrochromic display according to still another aspect of the present invention includes a plurality of pixels each of which is made up of a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which the pixel is provided with independent deleting means and writing means.
- Further, in the electrochromic display according to still another aspect of the present invention, the pixel includes two switching means and two rewriting means.
- Still further, the electrochromic display according to another aspect of the present invention includes a plurality of pixels each of which is made up of a pixel electrode, a counter electrode, an electrochromic layer and an electrolyte layer which are formed between the pixel electrode and the counter electrode, in which the pixel is provided with independent two gate wires, two switching TFTs severally connected to the gate wires via a gate electrode, source wires connected to the source electrodes of the switching TFTs, two rewriting TFTs severally connected to the drain electrodes of the switching TFTs via a gate electrode, and two power supply wires severally connected to the source electrodes of the rewriting TFTs, and the drain electrodes of the rewriting TFTs are connected to the pixel electrode.
-
FIG. 1 shows a cross-sectional schematic view of a pixel of an electrochromic display of an embodiment of the present invention. -
FIG. 2 shows a plan view of a pixel in an electrochromic display of an embodiment of the present invention. -
FIG. 3 shows a circuit diagram of a pixel in an electrochromic display of an embodiment of the present invention. -
FIG. 4 shows a circuit diagram of a pixel in another embodiment. -
FIG. 5 shows a circuit diagram of a pixel in another embodiment. -
FIG. 6 shows a circuit diagram of a pixel in another embodiment. -
FIG. 7 shows a circuit diagram of a pixel in another embodiment. -
FIG. 8 shows a circuit diagram of a pixel in another embodiment. -
FIG. 9 is a circuit diagram of each pixel of the present invention. -
FIG. 10 is a timing chart of an embodiment of the present invention. - In the following, description will be made for embodiments to implement the present invention based on the drawings. The embodiments show an electrochromic display of about 8 inches to 10 inches and having a pixel pitch of 80 to 100 μm.
-
FIG. 1 shows the cross-sectional schematic view of a pixel in an electrochromic display ofEmbodiment 1,FIG. 2 shows the plan view of the pixel, andFIG. 3 is a view schematically showing the circuit diagram of the pixel. Note thatFIG. 1 andFIG. 2 has different size, shape and the like of each constituent element. - The electrochromic display is constituted by an array-
side substrate 10, a color filter-side substrate 50, and anelectrolyte layer 80 sandwiched between the both substrates. - In the array-
side substrate 10, a plurality ofgate wires 12 and a plurality ofsource wires 13 are wired in a matrix state on aglass substrate 11. A region surrounded by thegate wires 12 and thesource wires 13 corresponds to one pixel. A switchingTFT 14, apixel electrode 15 connected to theTFT 14, and anelectrochromic layer 30 stacked on thepixel electrode 15 are formed on each pixel. - A plurality of the
gate wires 12 are formed on theglass substrate 11 by stacking Al and Mo. Further, thegate electrode 16 of theTFT 14 is simultaneously formed when forming thegate wires 12. Thegate electrode 16 has a size having about 65% of one pixel area, as shown inFIG. 2 , and its shape is in an oblong rectangular shape approximately similar to the shape of the pixel. It is preferable that the switchingTFT 14 be capable of flowing as large current as possible when it is turned to ON state for the purpose of performing oxidation-reduction reaction. Therefore, thegate electrode 16 is formed as large as possible. - A
gate insulation film 17 made of SiNx is stacked on theglass substrate 11, and thegate insulation film 17 covers thegate wires 12 and thegate electrode 16. An amorphous silicon (hereinafter, referred to as a-Si) layer is stacked on thegate insulation film 17, and only a part of the layer that falls in thesemiconductor layer 18 of theTFT 14 is left by a photolithography method (shown in a broken line inFIG. 2 ). At this point, thesemiconductor layer 18 is in a shape covering a major part of thegate electrode 16. - A metal layer where Al and Mo are stacked is formed on the
gate insulation film 17 and thesemiconductor layer 18, the metal layer is patterned by the photolithography method to form thesource wires 13, thesource electrode 19 and thedrain electrodes 20 of theTFT 14. At this point, thesource wires 13 are provided orthogonal to thegate wires 12, and thesource electrodes 19 are protruded from thesource wires 13 at an area near the crossing portion with thegate wire 12. - The periphery of the
source electrode 19 is in a shape taken along the periphery of thegate electrode 16 and also in a shape having U-shaped concave portions extending along thesource wires 13, and it is in a shape having two concave portions inFIG. 2 . Thedrain electrode 20 is in a shape having thin and long rod-shaped convex portions that are located between the U-shaped concave portions of thesource electrode 13, and has two convex portions so as to correspond to the concave portions of thesource electrode 19. - It is preferable that the switching
TFT 14 be capable of flowing as large current as possible when it is turned to ON state for the purpose of performing oxidation-reduction reaction. Particularly, theTFT 14 using a-Si in thesemiconductor layer 18 has difficulty of allowing current to flow therein comparing to a TFT using polysilicon despite advantages such as easiness of manufacturing comparing to the TFT using polysilicon, so it is necessary to make theTFT 14 as large as possible. Although a channel length may be shorter and a channel width may be wider in order to allow current to flow more smoothly, making theTFT 14 as large as possible to widen the channel width is more effective because there is a limitation on manufacturing engineering in shortening the channel length. The size of TFT may be no less than half the area of one pixel region, more preferably it may be no less than 60% of the area. - Consequently, in
Embodiment 1, the shapes of thesource electrode 19 and thedrain electrode 20 are devised to allow current to flow as much as possible between source/drain when theTFT 14 becomes ON state. Specifically, thegate electrode 16 of theTFT 14 is formed in an oblong rectangular shape corresponding to the shape of the pixel to make thesource electrode 19 and thedrain electrode 20 long, and the channel width can be wider in a limited space. Further, by providing the U-shaped concave portions in thesource electrode 19 and arranging thedrain electrode 20 between the concave portions, thesource electrode 19 is located on the both sides of thedrain electrode 20 to make the channel width become twice, and thus the channel width can be made larger effectively in a small space. - An
insulation film 21 is formed so as to cover thesource wires 13 and theTFT 14. Meanwhile, although not shown, theinsulation film 21 consists of two layers where a lower layer is formed of inorganic insulation film such as SiNx and an upper layer is formed of organic insulation film such as photosensitive acrylic resin. Then, countless concavity and convexity (not shown) are formed on the organic insulation film. The reason why the concavity and convexity are formed on the surface of theinsulation film 21 is to form a pixel electrode reflection type electrochromic display that reflects outside light on thepixel electrode 15 by using a reflective electrode material made of metal for the material of the pixel electrode 15 (described later). - In the case of a general electrochromic display, coloring agent is contained in the
electrolyte layer 80 in order to improve contrast. White particles for coloring are used in the coloring agent, and inorganic particles of calcium oxide, magnesium oxide, titanium dioxide or the like are specifically cited. In using such inorganic particles, they must be mixed into theelectrolyte layer 80 at a fixed ratio. Further, in usingsuch electrolyte layer 80, certain thickness of theelectrolyte layer 80 is required because good contrast cannot be secured if theelectrolyte layer 80 is made thin too much. Furthermore, when theelectrolyte layer 80 is made thinner, there is a danger that short circuit will occur between the array-side substrate 10 and the color filter-side substrate 50 due to the inorganic particles. - However, since the pixel electrode reflection type electrochromic display does not have the danger of the above-described problem, a gap between the array-
side substrate 10 and the color filter-side substrate 50 can be made narrower. In addition, the size and the application of the electrochromic display are often limited in a way to electronic books, advertisement on the street, or the like, and an observing position in such a case is also limited in a way. Therefore, it is better to enhance contrast in a specific direction rather than securing a wide view angle by using coloring agent or the like. Consequently, by using the pixel electrode reflection type electrochromic display in which the concavity and convexity are provided on a pixel electrode surface and a reflecting direction of light is focused in a fixed direction, contrast in an arbitrary direction can be enhanced. The tilt angle of the concavity and convexity formed on the pixel electrode surface is about 10° in order to focus light in a fixed direction. - In an area that does not overlap the
semiconductor layer 18 of thedrain electrode 20, acontact hole 22 is formed in theinsulation film 21. Further, a reflective electrode material made of Al is stacked on theinsulation film 21, the reflective electrode material is patterned by the photolithography method to form thepixel electrode 15. Ag or Al is specifically preferable for the reflective electrode material from the viewpoint of reflection efficiency, conductivity, or the like. Thedrain electrode 20 of theTFT 14 is connected to thepixel electrode 15 via thecontact hole 22. The surface of thepixel electrode 15 becomes uneven due to the effect of theinsulation film 21 located under the electrode. Further, the area of thepixel electrode 15 is slightly smaller than the area of one pixel, and a region that can be used for display and a region capable of reflecting light are made wider by increasing the area of thepixel electrode 15. The end portions of thepixel electrode 15 may be partially overlapped with thegate wire 12 or thesource wire 13 when seen on a plan view as long as they do not contact anadjacent pixel electrode 15. - Short circuit prevention means for preventing
adjacent pixel electrodes 15 and adjacentelectrochromic layers 30 from short-circuiting with each other is provided around thepixel electrode 15. It is specifically abarrier 23 formed so as to surround thepixel electrode 15. Thebarrier 23 is formed of Novolac resin on theinsulation film 21 on thegate wires 12 and thesource wires 13. Its height is approximately the same as the thickness of theelectrochromic layer 30, which is about 10 μm in this embodiment. When higher definition display needs to be performed, the size of one pixel becomes smaller, a gap between pixels becomes narrower, and there is a danger of causing short circuit of thepixel electrode 15 with adjacent pixels. Particularly, with advance of even higher definition in future, a distance between adjacent pixels, that is, the distance between thepixel electrode 15 and thepixel electrode 15 in this case becomes about 5 μm to 30 μm, and there is a higher chance of causing short circuit. - However, by providing the short circuit prevention means in this manner, short circuit among
adjacent pixel electrodes 15 can be prevented, and theelectrochromic layer 30 formed on thepixel electrode 15 is prevented from short-circuiting with anadjacent electrochromic layer 30. Note that thebarrier 23 may be any type as long as it is an insulator, and it may be formed of organic resin or inorganic resin other than Novolac resin. Further, as the short circuit prevention means other than thebarrier 23, a groove may be formed in theinsulation film 21 at a boundary area to an adjacent pixel, for example. - The
electrochromic layer 30 is formed in a region on thepixel electrode 15, which is surrounded by thebarrier 23. As theelectrochromic layer 30, one that is made of a material indicating coloring and erasing by electrochemical oxidation or reduction reaction and used in a general electrochromic display may be used. For example, tungsten oxide, titanium oxide, molybdenum oxide, iridium oxide, nickel oxide, vanadium oxide, tin nitride, indium nitride, polythiophene, polypyrrole, metal phthalocyanine, viologen and the like are cited. Alternatively, one having a nano-particle thin film state material as described in International Publication No. 97/35227 or the like may be used. By using a nano-particle thin film state material, oxidation-reduction reaction can be accelerated to increase display response speed or to improve contrast. The nano-particle thin film state material is used in this embodiment as well, and a nano-particle thin film made of SnO2 to which Sb is doped is specifically used in this embodiment. - Although the
electrochromic layer 30 may be directly formed on thepixel electrode 15 by a widely known method such as a vacuum evaporation method and a sputtering method, for example, nano particles made of SnO2 to which Sb is doped are formed first on eachpixel electrode 15 by a screen printing method in the forming method of the nano-particle thin film in this embodiment. Productivity can be improved by the screen printing method. Further, since thebarrier 23 surrounding the periphery of thepixel electrode 15 is formed, it is possible to form the nano-particle thin film highly accurately on thepixel electrode 15 by utilizing thebarrier 23. Particularly, when the forming method of the nano-particle thin film is done by the screen printing method, the height, area or the like of the nano-particle thin film can be formed very accurately in a space formed by thebarrier 23 on thepixel electrode 15. Then, after performing a process such as sintering the nano-particle thin film and allowing the film to adsorb oxidized or reduced compound, theelectrochromic layer 30 is formed. - In a color filter-
side substrate 50, acolor filter 52 provided corresponding to each pixel, acounter electrode 53, and anelectrochromic layer 54 stacked on thecounter electrode 53 are formed on aglass substrate 51. -
Black matrix 55 is formed on theglass substrate 51 so as to sectionalize each pixel, and thecolor filter 52 corresponding to each pixel is formed at the opening of theblack matrix 55. Thecolor filter 52 consists of three colors of red (R), green (G) and blue (B), for example, and one color out of the three colors is arranged corresponding to each pixel. Thecounter electrode 53 made of ITO or IZO, for example, is stacked on thecolor filter 52. - The
electrochromic layer 54 is formed on thecounter electrode 53. Theelectrochromic layer 54 is formed by a layer formed of the nano-particle thin film similar to the array-side substrate 10. A nano-particle thin film made of TiO2 is specifically used in this embodiment. After forming the nano-particle thin film on thecounter electrode 53, theelectrochromic layer 54 is formed after performing a process such as sintering the nano-particle thin film or allowing the film to adsorb oxidized or reduced compound. Then, the array-side substrate 10 and the color filter-side substrate 50 are arranged in a facing manner. - The
electrolyte layer 80 serves a role to carry charge by ions contained in solvent. As theelectrolyte layer 80, one used in a general electrochromic display may be used, and its constituent material and forming method are not particularly limited. It also may be a liquid electrolyte layer, a gel system electrolyte layer, or a solid system electrolyte layer. - Solvent into which electrolyte is dissolved can be used as the liquid electrolyte layer. As specific solvent, water, propylene carbonate, ethylene carbonate, y-butyrolactone and the like are cited. As specific electrolyte, sulfuric acid, hydrochloric acid and the like are cited as acids, and sodium hydroxide, potassium hydroxide, lithium hydroxide or the like is cited as alkalis. As salts, inorganic ion salt, quaternary ammonium salt, cyclic quaternary ammonium salt or the like of alkaline (earth) metal salt such as lithium perchlorate, sodium perchlorate and silver perchlorate is cited.
- As the gel system electrolyte, one produced by mixing and polymerizing acetonitrile, ethylene carbonate, propylene carbonate or their mixture with polymer such as polyacrylonitrile and polyacrylamide is specifically cited.
- As the solid system electrolyte, polymer side chain such as polyethyleneoxide having salt such as sulfone imide salt, alkylimidazolium salt and tetra-cyanoquinodimethane salt is cited.
- When the
electrolyte layer 80 is the liquid electrolyte layer, a sealing material is coated on the peripheral portion of the array-side substrate 10 or the color filter-side substrate 50. The sealing material is coated so as to form an injection port for injecting the material of theelectrolyte layer 80. Then, the both substrates are bonded together, and the material of theelectrolyte layer 80 is injected into a fixed gap generated between the both substrates via the injection port. Note that the sealing material is coated such that the fixed gap generated between the both substrates becomes the layer thickness of the electrolyte layer 80 (described later). Further, as an injection method of the material of theelectrolyte layer 80, a widely known method such as a vacuum injection method may be used, for example. - The thickness of the
electrolyte layer 80 is between about 5 μm and about 50 μm, and it is preferably between about 7 μm and about 30 μm. If the thickness of theelectrolyte layer 80 becomes too thick, there is a danger that an observer will recognize even the display state of an adjacent pixel through one pixel when he/she observes the display state, so it is preferable that the thickness of theelectrolyte layer 80 be as thin as possible. On the contrary, if the thickness of theelectrolyte layer 80 becomes too thin, its role may become insufficient, the array-side substrate 10 may highly likely short-circuit with the color filter-side substrate 50 due to a foreign object, or a problem on manufacturing engineering is considered, so that the above-described layer thickness is appropriate. - Although not shown in this embodiment, spherical spacers are sprayed on the array-
side substrate 10. Thus, the thickness of theelectrolyte layer 80 can be maintained at a fixed thickness over the entire electrochromic display, stable display can be performed, and the spraying can be performed easier than forming columnar spacers on the array-side substrate 10. Regarding the number of the spherical spacers, it is not necessary to allow spacers to exist in several numbers per one pixel like spherical spacers for strictly controlling a cell gap in a liquid crystal display, for example, but they may be sprayed in one spacer per a plurality of pixels. Therefore, the spherical spacers rarely affect display. - In the electrochromic display, a gate wire drive circuit and a source wire drive circuit (both are not shown) for selecting each pixel are respectively provided at the end portion side of the
gate wire 12 and the end portion side of thesource wire 13, and a signal control section (not shown) for controlling the gate wire drive circuit and the source wire drive circuit is provided. The gate wire drive circuit controlled by the signal control section applies a gate signal to apredetermined gate wire 12. The gate signal is applied to thegate electrode 16 of the switchingTFT 14 to turn theTFT 14 to ON state. The source signal applied to apredetermined source wire 13 is applied from thesource electrode 19 of theTFT 14 to thepixel electrode 15 via thedrain electrode 20, and display is performed by adisplay element 90. -
FIG. 4 ,FIG. 5 ,FIG. 6 ,FIG. 7 andFIG. 8 schematically show circuit diagrams of the electrochromic display ofEmbodiment 2. Note that the same reference numerals are applied to the same parts as those ofFIG. 3 . -
FIG. 4 , unlikeFIG. 3 where display is performed by a voltage drive circuit, is a display performing display by a current drive circuit. In addition to the switchingTFT 14, a power supply wire (Vdd) formed along thesource wire 13 and a TFT 101 for supplying current to thedisplay element 90 from the power supply wire (Vdd) are formed in each pixel. The gate electrode, the source electrode and the drain electrode of the TFT 101 are respectively connected to thedrain electrode 20 of theTFT 14, the power supply wire (Vdd) and thedisplay element 90. - Such current drive circuit can supply larger current to the
display element 90 than the one inFIG. 3 , and oxidation-reduction reaction can be proceeded at higher speed. In the case of this embodiment, power supply sorted in two types such as 10V for black display and 0V for white display should be performed to the power supply wire (Vdd). Further, a frame rate gradation method is suitable when performing gradation display. - Meanwhile, both the
TFT 14 and the TFT 101 are formed of an N-type TFT, that is, a TFT using electrons as carriers, so that a-Si can be used for the semiconductor layer, and they can be formed in the same process. Further, it is not necessary to form the power supply wire (Vdd) along thesource wire 13, but may be formed along thegate wire 12, and the power supply wire may be formed in any direction as long as it can supply power to each pixel. -
FIG. 5 shows the current drive circuit as shown in the above-described embodiment, where switching means and potential control means are provided for each pixel. Specifically, an N-type switching TFT 14 is used as the switching means andCMOS 102 made up of a P-type TFT and an N-type TFT is used as the potential control means. The input terminal of theCMOS 102 is connected to thedrain electrode 20 of theTFT 14, and the output terminal of theCMOS 102 is connected to thedisplay element 90. With this, oxidation-reduction reaction can be proceeded at higher speed, and gradation display by a voltage gradation method also can be performed by the potential control means. Meanwhile, since theCMOS 102 is used in this embodiment, polysilicon will be used in the semiconductor layer of the TFT. Accordingly, it exerts effects such that power consumption is reduced and peripheral drive circuits can be formed integrally. Furthermore, thesemiconductor layer 18 of the switchingTFT 14 can be formed by polysilicon as well. -
FIG. 6 shows the circuit where the switching means and the potential control means are provided in each pixel in the same manner asFIG. 5 . What is different fromFIG. 5 is that it uses two of P-type or N-type TFTs 103 as the potential control means instead of the CMOS 102 (the figure shows N-type TFT). Therefore, the semiconductor layer of the TFTs can be manufactured by using a-Si without using polysilicon, and thus an effect such as easiness of manufacturing is exerted. Since all the TFTs formed for each pixel are N-type TFTs, a-Si may be used in their semiconductor layers, so that the increase of manufacturing processes can be suppressed comparing to the case where P-type and N-type TFTs are mixed in each pixel. -
FIG. 7 shows a circuit where switching means, rewrite specifying means, potential control means and power source breaking means are provided for the current drive circuit of the above-described embodiment. Specifically, the switchingTFT 14 is used as the switching means, an N-type TFT 104 and a capacitor 105 are used as the rewrite specifying means,CMOS 106 is used as the potential control means, and two N-type TFTs 107 are used as the power breaking means. The gate electrode of theTFT 104 is connected to aword wire 108 traveling parallelly with thegate wire 12, the source electrode of theTFT 104 is connected to thesource wire 13, and the drain electrode of theTFT 104 is connected to the capacitor 105 and gate electrodes of theTFTs 107. The source electrodes of theTFTs 107 are severally connected to either one of the two power supply wires (Vdd)(Vss). The drain electrodes of theTFTs 107 are severally connected to either one of the P-type TFT and N-type TFT which constitute theCMOS 106, the input terminal of theCMOS 106 is connected to thedrain electrode 20 of theTFT 14, and the output terminal of theCMOS 106 is connected to thedisplay element 90. Consequently, in each pixel selected by theword wire 108 and thesource wire 13, whether or not rewrite is necessary is specified, power is supplied to a pixel specified as one that needs to be rewritten, and power is not supplied to a pixel specified as one that does not need to be rewritten. - Since the electrochromic display has a so-called memory capability of display, if the display of corresponding pixels is the same as the one in the previous pixel selection, power consumption is reduced when such display is maintained as it is. Consequently, by providing the rewrite specifying means and the power blocking means for each pixel, the rewrite specifying means specifies that no rewrite is needed and the power blocking means blocks supply of power if there is no change between the display state in the previous selection and the display state of the current selection. The rewrite specifying means specifies that rewrite is needed and the power blocking means does not block supply of power if there is a change between the display state in the previous selection and the display state of the current selection. With this method, power consumption in the electrochromic display can be reduced. Note that polysilicon will be used in the semiconductor layers of the TFTs because the
CMOS 106 is also used in this embodiment. -
FIG. 8 shows a current drive circuit where the switching means, the rewrite specifying means, the potential control means and the power source breaking means are provided in each pixel similar toFIG. 7 . What is different fromFIG. 7 is that a P-type or an N-type TFT 109 is used as the potential control means instead of the CMOS 106 (the figure shows N-type). Therefore, the semiconductor layer of the TFTs can be manufactured by using a-Si without using polysilicon, and thus an effect such as easiness of manufacturing is exerted. Since all the TFTs formed for each pixel are N-type TFTs, a-Si may be used in their semiconductor layers, so that the increase of manufacturing processes can be suppressed comparing to the case where P-type and N-type TFTs are mixed in each pixel. - Meanwhile, the power supply wires (Vdd)(Vss) are shown in the circuit diagrams shown in
FIG. 4 toFIG. 8 , and the end portions of the power supply wires are connected to the power source. In this case, there is a danger that power supply capability will reduce as they become further from the power source due to wiring resistance. Therefore, the both ends of the power supply wire may be connected to the power source or adjacent power supply wires are connected to each other via one or more connection points to prevent the power supply capability from being reduced. In such a case, when the connection points are formed in a ladder shape, power can be supplied even if one wire out of the power supply wires is broken. - Next, description will be made for a circuit constitution by which current is supplied to the
pixel electrodes 15 that are used in the electrochromic display ofEmbodiment 3.FIG. 9 is the circuit diagram schematically showing the drive circuit provided for each pixel. Each pixel is provided with two switching means and two rewriting means for supplying or stopping current to thepixel electrodes 15. - Specifically, an N-
type TFT 31 as switching means A and an N-type TFT 32 as switching means B are used. Then, an N-type TFT 33 as rewriting means C and an N-type TFT 34 as rewriting means D are used. Twoindependent gate wires TFT 31 is connected to thegate wire 35, and the gate electrode of theTFT 32 is connected to thegate wire 36. Further, asource wire 37 is connected to each pixel, and the source electrode of theTFT 31 and the source electrode of theTFT 32 are connected to thesource wire 37. - Then, the drain electrode of the
TFT 31 and the gate electrode of the rewriting TFT 33 are connected to each other and the drain electrode of theTFT 32 and the gate electrode of the rewritingTFT 34 are connected to each other. Two independent power supply wires Vss, Vdd are connected to each pixel, the source electrode of the TFT 33 is connected to the power supply wire Vss, and the source electrode of theTFT 34 is connected to the power supply wire Vdd. Further, the drain electrode of the TFT 33 and the drain electrode of theTFT 34 are connected to thepixel electrode 15. - When scanning signals are sequentially supplied to the gate wire and the
gate wire 35 is scanned, theTFT 31 becomes ON state. Then, the state of the TFT 33 is changed by data signals supplied from thesource wire 37, and current from the power supply wire Vss is controlled. Furthermore, theTFT 32 becomes ON state when thegate wire 36 is scanned, the state of theTFT 34 is changed by data signals supplied from thesource wire 37, and current from the power supply wire Vdd is controlled. Note that astorage capacitor 38 is formed between the power supply wire Vss and the gate electrode side of the TFT 33, and astorage capacitor 39 is formed between the power supply wire Vdd and the gate electrode side of theTFT 34, and the circuit is constituted to be capable of holding charge for a certain period even after scanning the gate wire. - At this point, when +5V is supplied to the power supply wire Vss and +8V is supplied to the power supply wire Vdd, for example, the display state in the electrochromic display becomes a deleted state, that is, changing from black display to white display due to power supply from the power supply wire Vss. On the contrary, power supply from the power supply wire Vdd causes the display state to become a writing state, that is, changing from white state to black state. As described, each pixel is severally provided with independent deleting means and writing means.
- Next, description will be made with reference to the timing chart shown in
FIG. 10 . In this embodiment, the number of gradations is set to four gradations, complete writing (deletion) is not performed in only one frame, but maximum three frames are used as a writing (deletion) enable period to perform complete writing (deletion). - (a) shows a case where the display state is changed from black display to white display using the deleting means. First, when the
gate wire 35 is scanned in the first frame, a signal for supplying enough quantity of current for turning black to gray, which is lightened from black by 33%, is allowed to flow from thesource wire 37 to thepixel electrodes 15, the signal controls the TFT 33 to adjust the current from the power supply wire Vss, and the display state of the pixels is changed from black display to gray display (gray that has been lightened from black by 33%). When thegate wire 36 is scanned in the first frame, thesource wire 37 does not supply a signal for starting writing. When thegate wire 35 is scanned in the second frame, the foregoing signal for supplying enough quantity of current for turning black to gray, which is lightened from black by 33%, is allowed to flow from thesource wire 37 to thepixel electrodes 15, the signal controls the TFT 33 to adjust the current from the power supply wire Vss, and the display state of the pixels is changed to gray display that has been lightened from the gray display of the first frame by 33% (gray that has been lightened from black by 66%). When thegate wire 36 is scanned at this point, thesource wire 37 still does not supply a signal for starting writing. By doing this, the display state is changed from black display to white display in the third frame. Note that it is not necessary that display is controlled to be lightened at an equal gap like 33%. - (b) shows a case of performing gray display where display is lightened from black by 66% using the deleting means. In this case, an object gray display state is realized by performing the same control as the first and second frames in the case of (a).
- (c) shows a case where the display state is changed from white display to black display using the writing means. First, when the
gate wire 35 is scanned in the first frame, a signal for performing deletion is not supplied from thesource wire 37. Then, when thegate wire 36 is scanned, a signal for supplying enough quantity of current for turning white to gray, which is darkened from white by 33%, is allowed to flow from thesource wire 37 to thepixel electrodes 15, the signal controls theTFT 34 to adjust the current from the power supply wire Vdd, and the display state of the pixels is changed from white display to gray display (gray that has been darkened from white by 33%). When thegate wire 35 is scanned in the second frame as well, thesource wire 37 does not supply a signal for starting writing. When thegate wire 36 is scanned, the signal for supplying enough quantity of current for turning the display to gray, which is darkened from the foregoing gray by 33%, is allowed to flow from thesource wire 37 to thepixel electrodes 15, the signal controls theTFT 34 to adjust the current from the power supply wire Vdd, and the display state of the pixels is changed to gray display, which has been darkened from the gray display of the first frame by 33%, (gray that has been darkened from white by 66%). By doing this, the display state is changed from white display to black display in the third frame. - (d) shows a case of performing the gray display that has been darkened by 66% from white display using the writing means. In this case, an object gray display state is realized by performing the same control as the first and second frames in the case of (c).
- Since the electrochromic display has a so-called memory capability of display, if the display of corresponding pixels is the same as the one in the previous pixel selection, power consumption is reduced when such display is maintained as it is (this is shown as a memory state in
FIG. 10 ). So, in the case of (a), since white display is continued in the fourth and further frames, thesource wire 37 does not supply a signal for changing the display state when thegate wires source wire 37 can be realized by performing comparison with a previous frame by using a frame memory installed in the display, and by performing signal generation processing based on its comparison result, for example. - Meanwhile, although complete writing (deletion) is performed by using three frames in this embodiment, the writing (deletion) may be completed only by one frame. However, in this case it is necessary to simultaneously scan the
gate wires pixel electrode 15 and power consumption also becomes large, so it is preferable to divide writing (deletion) into several frames to drive either the deleting means or the writing means as shown in this embodiment. - Note that other modes than the above-described embodiments within the range of the gist of the present invention can be realized. For example, other insulative substrates such as a plastic substrate may be used other than the
glass substrate 11. Furthermore, the insulative substrate may be film state having flexibility. - According to the electrochromic display of the present invention, a large TFT is formed and a wide channel width can be secured in one pixel, and thus it is possible to allow very large current to flow. Further, the current drive circuit is formed in each pixel and larger current can be allowed to flow. Therefore, oxidation-reduction reaction in the electrochromic phenomenon can be proceeded at a higher rate, and an electrochromic display capable of high-speed response can be provided.
- Further, according to the electrochromic display of another aspect of the present invention, the deleting means and the writing means are independently provided for each pixel, and thus writing and deleting can be performed independently. Further, the means severally include the power supply wire, so that charge can be supplied to the pixel electrode in a short time and thus an electrochromic display capable of high-speed response can be provided.
- Furthermore, according to the electrochromic display of still another aspect of the present invention, each pixel includes two rewriting means, writing and deleting can be performed independently, so that charge can be supplied to the pixel electrode in a short time and thus an electrochromic display capable of high-speed response can be provided.
Claims (19)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003284038A JP2005049771A (en) | 2003-07-31 | 2003-07-31 | Electrochromic display device |
JPJP2003-284038 | 2003-07-31 | ||
JPJP2003-322086 | 2003-09-12 | ||
JP2003322086A JP2005091514A (en) | 2003-09-12 | 2003-09-12 | Electrochromic display device |
PCT/JP2004/010474 WO2005012993A1 (en) | 2003-07-31 | 2004-07-23 | Electrochromic display |
WOPCT/JP04/10474 | 2004-07-23 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/010474 Continuation WO2005012993A1 (en) | 2003-07-31 | 2004-07-23 | Electrochromic display |
Publications (3)
Publication Number | Publication Date |
---|---|
US20060169980A1 US20060169980A1 (en) | 2006-08-03 |
US20080283834A9 true US20080283834A9 (en) | 2008-11-20 |
US7858983B2 US7858983B2 (en) | 2010-12-28 |
Family
ID=34117924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/344,798 Expired - Fee Related US7858983B2 (en) | 2003-07-31 | 2006-01-31 | Electrochromic display with current drive circuit |
Country Status (3)
Country | Link |
---|---|
US (1) | US7858983B2 (en) |
TW (1) | TWI249071B (en) |
WO (1) | WO2005012993A1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI427682B (en) * | 2006-07-04 | 2014-02-21 | Semiconductor Energy Lab | Method for manufacturing display device |
US8416197B2 (en) * | 2007-06-15 | 2013-04-09 | Ricoh Co., Ltd | Pen tracking and low latency display updates on electronic paper displays |
US8319766B2 (en) * | 2007-06-15 | 2012-11-27 | Ricoh Co., Ltd. | Spatially masked update for electronic paper displays |
US8279232B2 (en) | 2007-06-15 | 2012-10-02 | Ricoh Co., Ltd. | Full framebuffer for electronic paper displays |
US8913000B2 (en) * | 2007-06-15 | 2014-12-16 | Ricoh Co., Ltd. | Video playback on electronic paper displays |
US8355018B2 (en) * | 2007-06-15 | 2013-01-15 | Ricoh Co., Ltd. | Independent pixel waveforms for updating electronic paper displays |
US8203547B2 (en) | 2007-06-15 | 2012-06-19 | Ricoh Co. Ltd | Video playback on electronic paper displays |
KR20090063369A (en) * | 2007-12-14 | 2009-06-18 | 삼성전자주식회사 | Color display device |
TW201041134A (en) * | 2009-05-12 | 2010-11-16 | Au Optronics Corp | Thin film transistor structure |
KR101720586B1 (en) * | 2010-03-16 | 2017-03-30 | 삼성전자주식회사 | Active matrix electrochromic device and method of manufacturing the same |
CN105278199A (en) * | 2015-11-17 | 2016-01-27 | 深圳市华星光电技术有限公司 | Electrochromic display panel and manufacture method thereof |
KR102526534B1 (en) | 2015-12-31 | 2023-04-26 | 엘지디스플레이 주식회사 | Transparent display device |
US11714316B2 (en) * | 2017-09-20 | 2023-08-01 | New Visual Media Group, L.L.C. | Highly reflective electrostatic shutter display |
CN113156730B (en) * | 2020-01-23 | 2022-07-19 | 青岛凯欧斯光电科技有限公司 | Method for controlling electrochromic device |
US11210972B1 (en) | 2020-12-23 | 2021-12-28 | New Visual Media Group, L.L.C. | Optical shutter and display panel |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4218120A (en) * | 1978-01-17 | 1980-08-19 | Minolta Camera Kabushiki Kaisha | Electrochromic light regulator |
US5004663A (en) * | 1989-07-28 | 1991-04-02 | Xerox Corporation | Photoconductive imaging members with polyphosphazene binders |
US5444330A (en) * | 1990-02-26 | 1995-08-22 | Molecular Displays, Inc. | Electrochromic, electroluminescent and electrochemiluminescent displays |
US5847860A (en) * | 1996-07-17 | 1998-12-08 | International Business Machines Corporation | High density electrochromic display |
US6242779B1 (en) * | 1997-07-15 | 2001-06-05 | Sharp Laboratories Of America, Inc. | Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions |
US20020031876A1 (en) * | 2000-08-25 | 2002-03-14 | Fujitsu Limited | Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus |
US20020101413A1 (en) * | 2001-01-12 | 2002-08-01 | Johnson Mark Thomas | Light switching device |
US6467935B1 (en) * | 1999-05-19 | 2002-10-22 | Armin Schwab | Transparent pane arrangement |
US20020197460A1 (en) * | 2000-07-19 | 2002-12-26 | Naomi Kaneko | Substrate with an electrode and method of producing the same |
US6538632B1 (en) * | 1998-04-28 | 2003-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor circuit and a semiconductor display device using the same |
US20030170965A1 (en) * | 2001-12-27 | 2003-09-11 | Seiko Epson Corporation | Semiconductor integrated circuit and method for manufacturing semiconductor integrated circuit |
US6906842B2 (en) * | 2000-05-24 | 2005-06-14 | Schott North America, Inc. | Electrochromic devices |
US6992808B2 (en) * | 2000-12-27 | 2006-01-31 | Sony Corporation | Electrochromic display device and electrodeposition-type display device |
US20060066933A1 (en) * | 2002-08-15 | 2006-03-30 | Kininklijke Philips Electronics N.V. | Full-color electrochromic display with stacked in cell monochromic electrochromes |
US20060139725A1 (en) * | 2004-12-29 | 2006-06-29 | Tsinghua Nano-Technology Co., Ltd. | Electrochromic device |
US7342288B2 (en) * | 2002-08-30 | 2008-03-11 | Sharp Kabushiki Kaisha | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus |
US7460289B2 (en) * | 2003-01-31 | 2008-12-02 | Francois Pichot | Electrochromic display device |
US7489431B2 (en) * | 2006-11-08 | 2009-02-10 | Acreo Ab | Electrochromic device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5624384A (en) | 1979-08-02 | 1981-03-07 | Sharp Kk | Electrochromatic display unit |
EP0084604A1 (en) | 1982-01-25 | 1983-08-03 | American Cyanamid Company | Thin film transistor-driven electrochromic display and system |
JPS5991423A (en) | 1982-11-17 | 1984-05-26 | Matsushita Electric Ind Co Ltd | Electrochromic display element |
JPS5991424A (en) | 1982-11-17 | 1984-05-26 | Matsushita Electric Ind Co Ltd | Electrochromic display element |
JPS6195321A (en) | 1984-10-17 | 1986-05-14 | Matsushita Electric Ind Co Ltd | Electrochromic display apparatus |
JPS6227722A (en) | 1985-07-30 | 1987-02-05 | Asahi Glass Co Ltd | Electrochromic display element |
JPH07846B2 (en) | 1985-11-08 | 1995-01-11 | 株式会社豊田自動織機製作所 | Device for disconnecting and connecting bobbin carrier |
JPH02135322A (en) | 1988-11-16 | 1990-05-24 | Hitachi Maxell Ltd | Electrochromic display element |
JPH02192766A (en) * | 1989-01-21 | 1990-07-30 | Sumitomo Metal Ind Ltd | Thin film semiconductor element |
JPH10232413A (en) | 1997-02-21 | 1998-09-02 | Asahi Glass Co Ltd | Electrochromic device, its production and light controlling body |
JP2001188263A (en) | 1999-12-27 | 2001-07-10 | Toshiba Corp | Display device and radio portable equipment using the same |
JP2001264823A (en) | 2000-03-21 | 2001-09-26 | Sharp Corp | Electrochromic display |
JP4839551B2 (en) * | 2001-09-12 | 2011-12-21 | パナソニック株式会社 | Organic EL display device |
JP2003149688A (en) | 2001-11-12 | 2003-05-21 | Murakami Corp | Portable terminal equipment |
-
2004
- 2004-07-23 WO PCT/JP2004/010474 patent/WO2005012993A1/en active Application Filing
- 2004-07-30 TW TW093122826A patent/TWI249071B/en not_active IP Right Cessation
-
2006
- 2006-01-31 US US11/344,798 patent/US7858983B2/en not_active Expired - Fee Related
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4218120A (en) * | 1978-01-17 | 1980-08-19 | Minolta Camera Kabushiki Kaisha | Electrochromic light regulator |
US5004663A (en) * | 1989-07-28 | 1991-04-02 | Xerox Corporation | Photoconductive imaging members with polyphosphazene binders |
US5444330A (en) * | 1990-02-26 | 1995-08-22 | Molecular Displays, Inc. | Electrochromic, electroluminescent and electrochemiluminescent displays |
US5847860A (en) * | 1996-07-17 | 1998-12-08 | International Business Machines Corporation | High density electrochromic display |
US6242779B1 (en) * | 1997-07-15 | 2001-06-05 | Sharp Laboratories Of America, Inc. | Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions |
US6538632B1 (en) * | 1998-04-28 | 2003-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor circuit and a semiconductor display device using the same |
US6467935B1 (en) * | 1999-05-19 | 2002-10-22 | Armin Schwab | Transparent pane arrangement |
US6906842B2 (en) * | 2000-05-24 | 2005-06-14 | Schott North America, Inc. | Electrochromic devices |
US20020197460A1 (en) * | 2000-07-19 | 2002-12-26 | Naomi Kaneko | Substrate with an electrode and method of producing the same |
US20020031876A1 (en) * | 2000-08-25 | 2002-03-14 | Fujitsu Limited | Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus |
US7312914B2 (en) * | 2000-12-27 | 2007-12-25 | Sony Corporation | Electrochromic display device and electrodeposition-type display device |
US6992808B2 (en) * | 2000-12-27 | 2006-01-31 | Sony Corporation | Electrochromic display device and electrodeposition-type display device |
US20060028707A1 (en) * | 2000-12-27 | 2006-02-09 | Sony Corporation | Electrochromic display device and electrodeposition-type display device |
US20020101413A1 (en) * | 2001-01-12 | 2002-08-01 | Johnson Mark Thomas | Light switching device |
US20030170965A1 (en) * | 2001-12-27 | 2003-09-11 | Seiko Epson Corporation | Semiconductor integrated circuit and method for manufacturing semiconductor integrated circuit |
US20060066933A1 (en) * | 2002-08-15 | 2006-03-30 | Kininklijke Philips Electronics N.V. | Full-color electrochromic display with stacked in cell monochromic electrochromes |
US7342288B2 (en) * | 2002-08-30 | 2008-03-11 | Sharp Kabushiki Kaisha | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus |
US7460289B2 (en) * | 2003-01-31 | 2008-12-02 | Francois Pichot | Electrochromic display device |
US20060139725A1 (en) * | 2004-12-29 | 2006-06-29 | Tsinghua Nano-Technology Co., Ltd. | Electrochromic device |
US7489431B2 (en) * | 2006-11-08 | 2009-02-10 | Acreo Ab | Electrochromic device |
Also Published As
Publication number | Publication date |
---|---|
US7858983B2 (en) | 2010-12-28 |
TW200515078A (en) | 2005-05-01 |
WO2005012993A1 (en) | 2005-02-10 |
TWI249071B (en) | 2006-02-11 |
US20060169980A1 (en) | 2006-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7858983B2 (en) | Electrochromic display with current drive circuit | |
US7369295B2 (en) | Electrochromic display | |
US7830582B2 (en) | Electrochromic display | |
US10216057B2 (en) | Array substrate and manufacturing method thereof, display panel and display device | |
US7511873B2 (en) | Electrode structure of electrochromic device | |
KR101640816B1 (en) | Electrophoretic display device and method for fabricating the same | |
CN101868756A (en) | Active matrix substrate and liquid crystal display device | |
US20060018001A1 (en) | Display and displaying method | |
US6980263B2 (en) | Display device using bidirectional two-terminal element and manufacturing method thereof | |
US20230375892A1 (en) | Electronic paper, method for manufacturing the same, and display device thereof | |
JP5317565B2 (en) | Display device | |
KR102623481B1 (en) | Electrochromic device and display device including the same | |
JP2005049771A (en) | Electrochromic display device | |
US8395611B2 (en) | Active-matrix electronic display comprising diode based matrix driving circuit | |
US7839463B2 (en) | Thin film diode panel and manufacturing method of the same | |
KR100767631B1 (en) | method for fabricating array substrate for LCD | |
JP2003005229A (en) | Electrophoresis display device | |
JP2005091514A (en) | Electrochromic display device | |
JP4698306B2 (en) | Display device and driving method thereof | |
KR100925471B1 (en) | Thin film diode panel for trans-reflect liquid crystal display | |
JPH10143125A (en) | Electrochromic display device | |
JP2008122797A (en) | Display element and display device using the same | |
TW201516549A (en) | Electrochromic display panel | |
JPS61292671A (en) | Electrochromic display element | |
JP2005283986A (en) | Display element and contactless ic card including same display element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MORITA, SATOSHI;YAMAUCHI, TAKAO;SANO, YUTAKA;SIGNING DATES FROM 20060322 TO 20060324;REEL/FRAME:018281/0343 Owner name: TOTTORI SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MORITA, SATOSHI;YAMAUCHI, TAKAO;SANO, YUTAKA;SIGNING DATES FROM 20060322 TO 20060324;REEL/FRAME:018281/0343 Owner name: SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MORITA, SATOSHI;YAMAUCHI, TAKAO;SANO, YUTAKA;REEL/FRAME:018281/0343;SIGNING DATES FROM 20060322 TO 20060324 Owner name: TOTTORI SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MORITA, SATOSHI;YAMAUCHI, TAKAO;SANO, YUTAKA;REEL/FRAME:018281/0343;SIGNING DATES FROM 20060322 TO 20060324 |
|
AS | Assignment |
Owner name: SANYO ELECTRIC CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TOTTORI SANYO ELECTRIC CO., LTD.;REEL/FRAME:020037/0341 Effective date: 20071019 |
|
AS | Assignment |
Owner name: XARAZ PROPERTIES LLC, DELAWARE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SANYO ELECTRIC CO., LTD.;REEL/FRAME:020403/0362 Effective date: 20071116 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
CC | Certificate of correction | ||
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: CHARTOLEAUX KG LIMITED LIABILITY COMPANY, DELAWARE Free format text: MERGER;ASSIGNOR:XARAZ PROPERTIES, L.L.C.;REEL/FRAME:037334/0539 Effective date: 20150812 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552) Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20221228 |