US20080111189A1 - Hybrid crystallographic surface orientation substrate having one or more soi regions and/or bulk semiconductor regions - Google Patents
Hybrid crystallographic surface orientation substrate having one or more soi regions and/or bulk semiconductor regions Download PDFInfo
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- US20080111189A1 US20080111189A1 US12/013,932 US1393208A US2008111189A1 US 20080111189 A1 US20080111189 A1 US 20080111189A1 US 1393208 A US1393208 A US 1393208A US 2008111189 A1 US2008111189 A1 US 2008111189A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 235000012431 wafers Nutrition 0.000 claims abstract description 52
- 239000012212 insulator Substances 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Abstract
Description
- This application is a Divisional application of co-pending U.S. patent application Ser. No. 11/164,345, filed on Nov. 18, 2005, which is hereby incorporated by reference.
- 1. Technical Field
- The invention relates generally to semiconductor devices, and more particularly, to a substrate having hybrid crystallographic surface orientations in one or more semiconductor-on-insulator (SOI) regions and/or non-SOI regions for supporting different semiconductor devices.
- 2. Background Art
- Performance improvement of semiconductor devices is a never-ending endeavor for manufacturers of those devices. One challenge currently faced by the semiconductor industry is implementing different semiconductor devices, e.g., memory and logic devices, on a single chip while maintaining process simplicity and transistor performance. These devices are referred to as “system-on-chips” (SoC) because the electronics for a complete, working product are contained on a single chip. One approach that is currently employed to improve performance of a SoC is to fabricate the different types of semiconductor devices on silicon substrates having optimal surface orientations. As used herein, “surface orientation” refers to the crystallographic structure or periodic arrangement of silicon atoms on the surface of a wafer. Different surface orientations are optimal for different semiconductor devices. For example, an n-type field effect transistor (nFET) can be optimized by being generated on silicon having a <100> surface orientation, while a p-type FET (pFET) can be optimized by being generated on silicon having a <110> surface orientation. In addition, memory devices and nFETs are typically optimized when generated on semiconductor-on-insulator (SOI) substrates, while pFETs are typically optimized when generated on bulk silicon substrates.
- One approach to providing these substrates includes bonding two substrates having different surface orientations to one another, with an insulative silicon dioxide (oxide) layer in between to form an SOI substrate. However, there is a need in the industry for both SOI and non-SOI areas on a single substrate for specific applications. These applications may include, for example, power devices or devices where a thick silicon substrate allows for desired strain from features such as embedded silicon germanium (SiGe) or the like. It also may be desirable to have more than one thickness of silicon over the buried oxide.
- In view of the foregoing, there is a need in the art for a substrate having different surface orientations and different structure, e.g., SOI and non-SOI regions.
- A substrate for a semiconductor device is disclosed including, in one embodiment, a plurality of semiconductor-on-insulator (SOI) wafers bonded to one another in a single stack. A distal end of the stack includes a first SOI region with a first semiconductor layer having a thickness and a first surface orientation. A surface of the single stack may further include a non-SOI region and/or at least one second SOI region. The non-SOI region may include bulk silicon that extends through all of the insulator layers of the single stack and has a thickness different than that of the first silicon layer. Each second SOI region has a second semiconductor layer having a thickness different than that of the first semiconductor layer and/or a different surface orientation than the first surface orientation. The substrate thus allows formation of different devices on optimal substrate regions that may include different surface orientations and/or different thicknesses and/or different bulk or SOI structures.
- A first aspect of the invention provides a substrate for a semiconductor device, the substrate comprising: a stack including: a first semiconductor-on-insulator (SOI) wafer having a first semiconductor layer having a first surface orientation, a second semiconductor layer having a second surface orientation and a first insulator layer therebetween, at least one second semiconductor-on-insulator (SOI) wafer having a third semiconductor layer having a third surface orientation, a fourth semiconductor layer having a fourth surface orientation and a second insulator layer therebetween, and an oxidized insulator layer between the first SOI wafer and one of the at least one second SOI wafer; and a distal end of the stack including a first SOI region of the first SOI wafer including the first semiconductor layer, and at least one second region including one of the following: a bulk semiconductor region extending through all insulator layers of the stack, the bulk region having a different thickness than a thickness of the first semiconductor layer of the first SOI region, and a second SOI region having at least one of a different semiconductor thickness than a thickness of the first semiconductor layer and a different surface orientation than the first semiconductor layer, wherein at least one of the first, second, third and fourth surface orientations is different than the other surface orientations.
- A second aspect of the invention provides a substrate for a semiconductor device, the substrate comprising: a plurality of semiconductor-on-insulator (SOI) wafers bonded to one another in a single stack, wherein a distal end of the single stack includes a first SOI region with a first semiconductor layer having a thickness and a first surface orientation, and wherein a surface of the single stack includes at least one of the following: a non-SOI region extending through all of the insulator layers of the single stack, the non-SOI region having a thickness different than the thickness of the first semiconductor layer, and at least one second SOI region having a second semiconductor layer having at least one of the following: a thickness different than the thickness of the first semiconductor layer and a different surface orientation than the first surface orientation.
- A third aspect of the invention provides a method of forming a semiconductor substrate, the method comprising the steps of: providing a first semiconductor-on-insulator (SOI) wafer; bonding a second SOI wafer to the first SOI wafer; forming an opening through a distal semiconductor surface of the bonded wafers, the opening extending to expose one of the other semiconductor layers of the SOI wafers; forming an isolation in the opening; and re-growing a semiconductor material in the opening, the semiconductor material having the same surface orientation as the exposed semiconductor layer.
- The illustrative aspects of the present invention are designed to solve the problems herein described and other problems not discussed, which are discoverable by a skilled artisan.
- These and other features of this invention will be more readily understood from the following detailed description of the various aspects of the invention taken in conjunction with the accompanying drawings that depict various embodiments of the invention, in which:
-
FIG. 1 shows one embodiment of a substrate according to the invention. -
FIG. 2 shows two SOI wafers. -
FIG. 3 shows the two SOI wafers ofFIG. 1 bonded together into a stack. -
FIGS. 4-6 show steps of one embodiment of a method according to the invention. - It is noted that the drawings of the invention are not to scale. The drawings are intended to depict only typical aspects of the invention, and therefore should not be considered as limiting the scope of the invention. In the drawings, like numbering represents like elements between the drawings.
- Referring to
FIG. 1 , one embodiment of asubstrate 100 for semiconductor devices according to the invention is illustrated.Substrate 100 includes a plurality of semiconductor-on-insulator (SOI) wafers 102, 104 bonded to one another in asingle stack 106. While only twoSOI wafers SOI wafer semiconductor layer 122, 152 (typically some form of silicon, silicon germanium or germanium), aninsulator layer 124, 154 (e.g., of silicon dioxide (SiO2)), and a semiconductor layer (substrate) 126, 156, e.g., of bulk silicon.First SOI wafer 102 includes afirst semiconductor layer 122 having a first surface orientation, asecond semiconductor layer 126 having a second surface orientation and afirst insulator layer 124 therebetween. Similarly, eachsecond SOI wafer 104 includes athird semiconductor layer 152 having a third surface orientation, afourth semiconductor layer 156 having a fourth surface orientation and asecond insulator layer 154 therebetween. At least one semiconductor layer has a different surface orientation than the other layers. For example, as shown,semiconductor layer 126 has a different surface orientation. Each SOI wafer 102, 104 may be provided as a conventional SOI wafer, a separation by implantation of oxygen (SIMOX) wafer or a bonded wafer. At least onesemiconductor layer stack 106 may include silicon, germanium, silicon germanium, strained silicon on silicon germanium or strained silicon. - First and
second SOI wafers insulator layer 128 onsecond SOI wafer 104, and joiningfirst SOI wafer 102. Each SOI wafer 102, 104 instack 106 may be similarly bonded to an adjacent SOI wafer by an oxidized insulator layer. In the illustrated embodiment,stack 106 includes twoSOI wafers insulator layers -
Substrate 100 also includes asurface 110 of adistal end 112 ofsingle stack 106 that includes afirst SOI region 120 with afirst semiconductor layer 122 having a thickness (T) and a first surface orientation. First SOIregion 120 is formed as part offirst SOI wafer 102. As shown, the first surface orientation is <100>. However, any surface orientation typically used for optimizing a particular device may be used, e.g., <100>, <110> or <111>. For example, nFETs prefer a <100> surface orientation for the highest mobility, while pFETs show the corresponding mobility increase with a <110> surface orientation. In any event, as mentioned above, according to one embodiment of the invention, at least one of the surface orientations ofsilicon layers -
Distal end 112 may further include anon-SOI region 130 and/or at least onesecond SOI region region first SOI region 120. In addition, eachregion first SOI region 120 or different thanfirst SOI region 120, depending on the surface orientation of the silicon layer from which theregion substrate 100 may provide a variety of different surface orientations and/or semiconductor thicknesses and/or structure, e.g., bulk or SOI, in asingle stack 106.Substrate 100, therefore, allows for formation of a variety of different devices on asingle substrate 100. - Turning to the details of the illustrative regions, in one embodiment,
non-SOI region 130 extends through all of insulator layers 124, 128, 154 ofsingle stack 106 to lowermost semiconductor layer (substrate) 156 and may include bulk silicon. As a result,non-SOI region 130 has a thickness (TB) different than the thickness (T) offirst semiconductor layer 122. In addition, as will be described below, sincenon-SOI region 130 is epitaxially grown from semiconductor layer (substrate) 156, it has the same surface orientation, which may be the same as the first surface orientation, e.g., <100>, or different. As illustrated, the surface orientations are the same, i.e., <100>. - Each
second SOI region second semiconductor layer first silicon layer 122 and a different surface orientation than the first surface orientation. As illustrated,second SOI region 132 has a <110> surface orientation, whilesecond SOI region 134 has a <100> surface orientation. Eachsecond SOI region first semiconductor layer 122. The surface orientations and thickness ofsecond SOI regions region first SOI region 120 has a <100> surface orientation, whilesecond SOI region 132 has a <110> surface orientation,second SOI region 134 has a <100> surface orientation andnon-SOI region 130 has a <100> (shown) or a <110> surface orientation. However, if desired,distal end 112 may include three different surface orientations, e.g.,first SOI region 120 with a <100> surface orientation,second SOI region 132 with a <110> surface orientation andnon-SOI region 130 and/orsecond SOI region 134 with a <111> surface orientation. - Each
region first SOI region 120 includes atrench isolation 162, e.g., of silicon dioxide (SiO2). - Turning to
FIGS. 2-6 , one embodiment of a method of formingsemiconductor substrate 100 will now be described. It should be recognized thatsubstrate 100 may be formed by a variety of other methods not herein described, but considered within the scope of the invention. Referring toFIGS. 2 and 3 , in first steps, afirst SOI wafer 102 is provided, and then bonded to asecond SOI wafer 104. As mentioned above, the bonding step may include any now known or later developed method for bonding wafers. In one embodiment, as shown inFIG. 3 , the bonding step may include forming anoxidized insulator layer 128 on a surface ofsecond SOI wafer 104 and joining first andsecond SOI wafers oxidized insulator layer 128. It should be recognized, however, that various other bonding techniques now known or later developed are also possible, e.g., joining the first andsecond SOI wafers oxide insulating layer 128, which is referred to as silicon-to-silicon bonding. - As shown in
FIG. 4 , a next step includes forming anopening 180 through a distal semiconductor surface, i.e.,silicon layer 122 ofdistal end 112, of the bonded wafers. In one embodiment, opening 180 is formed by depositing amask 182, patterningmask 182 andetching 184, e.g., reactive ion etching (RIE) using chemistry such as tetrafluoromethane (CF4) or a polymerizing etch, to a selected depth instack 106. That is, opening 180 extends to expose one of theother semiconductor layers SOI wafers semiconductor layer 126. However, it could be any semiconductor layer. In addition, more than oneopening 180 may be formed at any time, if desired.Mask 182 is then removed. - Next, as shown in
FIG. 5 , anisolation 160 is formed inopening 180 in any conventional manner for isolating the region from surrounding structure during formation. In one embodiment, a first part of this step includes forming asidewall spacer 160, which may include, for example, silicon dioxide (SiO2) and/or silicon nitride (Si3N4).Sidewall spacers 160 may have a thickness of, for example, 20-200 nm, depending on the needs of the structure. As also shown inFIG. 5 , a next step includes re-growing asemiconductor material 190 inopening 180. The growth may be selective or non-selective depending on the masking scheme used. Growth is continued until thesemiconductor material 190 reachessurface 110, or may be planarized to meetsurface 110 by chemical mechanical polishing (CMP).Semiconductor material 190, e.g., silicon, has the same surface orientation as the exposed semiconductor layer, i.e., as shown,semiconductor layer 126. - As shown in
FIG. 6 , a second part of the isolation forming step may include replacing each sidewall spacer 160 (FIG. 5 ) with atrench isolation 162, e.g., silicon dioxide (SiO2) and/or silicon nitride (Si3N4). The isolation step may be provided in other forms than that described, e.g., the isolations may be formed after semiconductor material re-growth. Trenchisolations 162 allow for formation of different devices within each region and provide removal of the typically defective epitaxial growth adjoiningsidewall spacers 160, i.e., trenches etched fortrench isolations 162 are wider thansidewall spacers 160. - It should be recognized that the above-described opening forming, isolation forming and re-growing steps may be repeated such that
numerous regions FIG. 1 . For example, the method may include the steps of forming another opening to a different semiconductor layer ofSOI wafers non-SOI region 130 or anothersecond SOI region 134. Fornon-SOI region 130, opening 180 would extend through all insulator layers 124, 128, 154 ofSOI wafers layer 156. In any event,substrate 100 could result in at least one re-grown semiconductor material having a surface orientation different than a surface orientation ofdistal semiconductor layer 122. - Traditional semiconductor processing would continue at this point, allowing the formation of certain devices on
non-SOI regions 130 ofsubstrate 100, while other high performance devices could be formed onSOI regions semiconductor layers silicon substrate 156 first, such that the dualburied oxide layers - The foregoing description of various aspects of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously, many modifications and variations are possible. Such modifications and variations that may be apparent to a person skilled in the art are intended to be included within the scope of the invention as defined by the accompanying claims.
Claims (5)
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US12/013,932 US20080111189A1 (en) | 2005-11-18 | 2008-01-14 | Hybrid crystallographic surface orientation substrate having one or more soi regions and/or bulk semiconductor regions |
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US11/164,345 US7348633B2 (en) | 2005-11-18 | 2005-11-18 | Hybrid crystallographic surface orientation substrate having one or more SOI regions and/or bulk semiconductor regions |
US12/013,932 US20080111189A1 (en) | 2005-11-18 | 2008-01-14 | Hybrid crystallographic surface orientation substrate having one or more soi regions and/or bulk semiconductor regions |
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US12/013,932 Abandoned US20080111189A1 (en) | 2005-11-18 | 2008-01-14 | Hybrid crystallographic surface orientation substrate having one or more soi regions and/or bulk semiconductor regions |
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US7893493B2 (en) * | 2006-07-10 | 2011-02-22 | International Business Machines Corproation | Stacking fault reduction in epitaxially grown silicon |
FR2917235B1 (en) * | 2007-06-06 | 2010-09-03 | Soitec Silicon On Insulator | METHOD FOR PRODUCING HYBRID COMPONENTS |
US7648868B2 (en) * | 2007-10-31 | 2010-01-19 | International Business Machines Corporation | Metal-gated MOSFET devices having scaled gate stack thickness |
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US20070122634A1 (en) | 2007-05-31 |
CN1967843A (en) | 2007-05-23 |
US7348633B2 (en) | 2008-03-25 |
JP2007142401A (en) | 2007-06-07 |
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