US20080003833A1 - Fin mask and method for fabricating saddle type fin using the same - Google Patents
Fin mask and method for fabricating saddle type fin using the same Download PDFInfo
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- US20080003833A1 US20080003833A1 US11/679,179 US67917907A US2008003833A1 US 20080003833 A1 US20080003833 A1 US 20080003833A1 US 67917907 A US67917907 A US 67917907A US 2008003833 A1 US2008003833 A1 US 2008003833A1
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- 238000000034 method Methods 0.000 title claims description 45
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 description 25
- 150000004767 nitrides Chemical class 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/056—Making the transistor the transistor being a FinFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Definitions
- the present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a saddle type transistor having a saddle type fin.
- a typical cell in a three-dimensional structure for use in a dynamic random access memory (DRAM) cell includes a fin structure, a recess channel structure, and a saddle type structure.
- the saddle type structure includes the fin structure and the recess channel structure in combination.
- FIG. 1A illustrates a perspective view showing a method for fabricating a typical saddle type transistor
- FIG. 1B illustrates a plan view of a fin mask
- an isolation structure 12 is formed in a substrate 11 using a shallow trench isolation (STI) process.
- STI shallow trench isolation
- a fin mask 13 is formed over the substrate structure.
- Saddle type fins 14 are formed by etching using the fin mask 13 .
- the etching for forming the saddle type fins 14 may include etching the isolation structure 12 using the fin mask 13 and then etching the active region 11 A, or etching the active region 11 A and then etching the isolation structure 12 .
- the fin mask 13 is removed, and although not illustrated, a gate oxide layer, a gate electrode, and source/drain are formed to complete a saddle type transistor.
- the typical method as described above uses the line type fin mask 13 to form the saddle type fins 14 .
- the active region 11 A is exposed by the line type fin mask 13 at regions predetermined for forming the saddle type fins 14 as well as at the ends of the active region 11 A along the major axis.
- dummy saddle type fins 14 A may be formed.
- the dummy saddle type fins 14 A may be formed in an active region that will be connected to a storage node. Thus, leakage of the storage node and capacitance of the gate may be increased, deteriorating performance of the transistor.
- Embodiments of the present invention are directed towards providing a fin mask and a method for fabricating a saddle type fin using the same, which can reduce formation of undesired dummy saddle type fins at the end of an active region along a major axis.
- a fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask including: a first fin mask of a line type; and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
- a fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask including: a first fin mask of a line type; and a second fin mask having openings, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
- a fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask including island-shaped openings exposing saddle type fin regions and covering the rest of the active regions.
- a method for fabricating a saddle type fin including: providing a substrate defining at least two active regions that have neighboring ends in a major axis; forming an etch barrier pattern over the substrate, the etch barrier pattern exposing saddle type fin regions of the active regions and covering the rest of the active regions; and etching the saddle type fin regions to form saddle type fins in a local damascene structure, wherein forming the etch barrier pattern includes forming a first fin mask and a second fin mask, and wherein the first fin mask exposes the saddle type fin regions in a line pattern and the second fin mask covers the neighboring ends of the active regions.
- FIG. 1A illustrates a perspective view of a typical method for fabricating a saddle type fin.
- FIG. 1B illustrates a plan view of a typical fin mask.
- FIG. 2 illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a first embodiment of the present invention.
- FIGS. 3A to 3E illustrate cross-sectional views of a method for fabricating a saddle type fin according to the first embodiment of the present invention.
- FIG. 4 illustrates resultant saddle type fins according to the first embodiment of the present invention.
- FIG. 5A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a second embodiment of the present invention.
- FIG. 5B illustrates a scanning electron microscopic (SEM) view of a second fin mask according to the second embodiment of the present invention.
- FIG. 6A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a third embodiment of the present invention.
- FIG. 6B illustrates a SEM view of a second fin mask shown in FIG. 6A .
- FIG. 7A illustrates a plan view of a fin mask used in fabricating a saddle type fin according to a fourth embodiment of the present invention.
- FIG. 7B illustrates a SEM view of a fin mask shown in FIG. 7A .
- FIG. 8 illustrates a SEM view of saddle type fins according to embodiments of the present invention.
- the present invention relates to a fin mask and a method for fabricating a saddle type fin using the same. Formation of dummy saddle type fins at the ends of neighboring active regions along a major axis may be reduced through using a fin mask combination that locally opens saddle type fin regions. Thus, leakage of the storage node and increased gate capacitance caused by the dummy saddle type fins may be reduced.
- FIG. 2 illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a first embodiment of the present invention.
- a plurality of active regions 101 are formed in a substrate.
- the substrate has a flat surface with an X axis and a Y axis.
- the active regions 101 are formed in a certain size with a major axis and a minor axis.
- the active regions 101 are disposed in a manner that ends 104 along the major axis of two neighboring active regions 101 along the X axis are adjacent to each other, and an isolation structure 102 is formed between the adjacent active regions 101 .
- ends 104 along the major axis of two neighboring active regions 101 along the X axis are adjacent to each other, and an isolation structure 102 is formed between the adjacent active regions 101 .
- an isolation structure 102 is formed between the adjacent active regions 101 .
- the active region 101 is defined by the isolation structure 102 .
- Forming a fin mask according to the first embodiment includes using a first fin mask FM 1 and a second fin mask FM 2 in combination to form saddle type fins 103 .
- the active region 101 and the isolation structure 102 are selectively etched to form the saddle type fins 103 , that is, the active region 101 protruding in a saddle type structure.
- the first fin mask FM 1 and the second fin mask FM 2 may be sequentially used according to a given order, and the given order may be changeable. For instance, the first fin mask FM 1 may be formed first and the second fin mask FM 2 may be formed after the first fin mask FM 1 is removed.
- the second fin mask FM 2 may be formed first and the first fin mask FM 1 may be formed after the second fin mask FM 2 is removed.
- FIG. 2 illustrates both the first and second fin masks FM 1 and FM 2 together to show the relative position of the first and second fin masks FM 1 and FM 2 .
- the first fin mask FM 1 is a line type mask that is formed along a first direction
- the second fin mask FM 2 is an island type mask that is formed along a second direction that is orthogonal to the first direction.
- Using the first fin mask FM 1 and the second fin mask FM 2 in combination allows selectively etching portions of the active region 101 and the isolation structure 102 predetermined for forming the saddle type fins 103 . That is, portions where dummy saddle type fins usually occur (i.e., the ends 104 along the major axis of two neighboring active regions 101 along the X axis) are not etched during an etching process for forming the saddle type fins 103 . This result may be obtained because the island type second fin mask FM 2 is applied.
- the second fin mask FM 2 may be an island type mask of a rectangular shape formed to cover the ends 104 along the major axis of the neighboring active regions 101 and cover the isolation structure 102 between the two active regions 101 .
- the second fin mask FM 2 is formed at least partly to intersect the location where the first fin mask FM 1 was formed.
- the first fin mask FM 1 and the second fin mask FM 2 may be applied in a certain order.
- a hard mask pattern transcribing the shape of the first fin mask FM 1 and the second fin mask FM 2 in combination is used as an etch barrier when forming the saddle type fins 103 .
- FIGS. 3A to 3E illustrate cross-sectional views of a method for fabricating a saddle type fin according to the first embodiment of the present invention.
- an isolation structure 24 is formed in a substrate 21 using a shallow trench isolation (STI) process.
- the isolation structure 24 defines an active region 21 A.
- a pad oxide layer 22 and a pad nitride layer 23 are formed over the active region 21 A.
- the STI process includes forming an oxide-based layer and a nitride-based layer over the substrate 21 in sequential order when forming the isolation structure 24 .
- An etching process is performed to form trenches in the substrate 21 using an STI mask.
- the STI mask is removed.
- An insulation layer e.g., a high density plasma (HDP) oxide layer
- CMP chemical mechanical polishing
- the active region 21 A includes an island type pattern having a major axis and a minor axis. In a plan view, the active region 21 A has substantially the same shape and layout as the active regions 101 shown in FIG. 2 .
- An amorphous carbon layer 25 , a dielectric anti-reflective coating (DARC) layer 26 , a polysilicon hard mask 27 , and a first patterned bottom anti-reflective coating (BARC) layer 28 A are formed over the resulting substrate structure.
- the amorphous carbon layer 25 , the DARC layer 26 , a polysilicon hard mask layer, and a first BARC layer are formed over the substrate structure.
- the selectivity between the DARC layer 26 and the amorphous carbon layer 25 is approximately 10:1 or higher.
- the DARC layer 26 functions as a hard mask when etching the amorphous carbon layer 25 .
- the polysilicon hard mask layer functions as a hard mask when etching the DARC layer 26 .
- Both the DARC layer 26 and the polysilicon hard mask layer may have a thickness of approximately 1,000 ⁇ or less.
- the amorphous carbon layer 25 may be used as a hard mask for forming a subsequent saddle type fin.
- the amorphous carbon layer 25 may have a thickness of approximately 500 ⁇ or greater.
- a first fin mask (FM 1 ) 29 is formed over the first BARC layer.
- the FM 1 29 includes a photoresist layer patterned by a photo-exposure and developing process.
- the FM 1 29 includes line type first openings 29 A exposing saddle type fin regions. That is, the FM 1 29 is formed in a line mask shape, wherein the first openings 29 A are formed to intersect with the major axis of the active region 21 A.
- the active region 21 A and the FM 1 29 are disposed in substantially the same manner as the active regions 101 and the first fin mask FM 1 shown in FIG. 2 .
- An etching process is performed to etch the first BARC layer and the polysilicon hard mask layer using the FM 1 29 as an etch mask. Consequently, the first patterned BARC layer 28 A and the polysilicon hard mask 27 are formed. Thus, the polysilicon hard mask 27 is formed in a line type pattern, transcribing the shape of the FM 1 29 .
- the FM 1 29 is removed.
- the first patterned BARC layer 28 A is also removed at this time.
- a second BARC layer 28 B is formed over the resultant substrate structure.
- a second fin mask (FM 2 ) 30 is formed over the second BARC layer 28 B.
- the FM 2 30 includes a photoresist layer patterned by a photo-exposure and developing process. In a plan view, the FM 2 30 covers the ends of two neighboring active regions 21 A along the major axis. Thus, the FM 2 30 exposes the saddle type fin regions through a second opening 30 A, and yet covers the ends of the active regions 21 A along the major axis where the dummy saddle type fins may form and the isolation structure 24 formed between the ends.
- the FM 2 30 is formed in an island shape. Thus, the FM 2 30 and the FM 1 29 are shaped differently.
- an etching process is performed using the FM 2 30 as an etch mask. That is, the second BARC layer 28 B and the DARC layer 26 are etched to form a patterned second BARC layer 28 C and a patterned DARC layer 26 A. At this time, the polysilicon hard mask 27 may not be etched. Thus, the DARC layer 26 below the polysilicon hard mask 27 is etched in a manner such that the patterned DARC layer 26 A is self-aligned by the polysilicon hard mask 27 . Referring to FIG. 3D , the FM 2 30 is removed. The patterned second BARC layer 28 C is also removed at this time.
- the polysilicon hard mask 27 is removed.
- the amorphous carbon layer 25 is etched to form an amorphous carbon pattern 25 A using the patterned DARC layer 26 A as a mask.
- a plan view of the amorphous carbon pattern 25 A transcribing the shape of the patterned DARC layer 26 A is shown in FIG. 4 .
- the pad nitride layer 23 and the pad oxide layer 22 are etched to form a patterned pad nitride layer 23 A and a pad oxide layer 22 A.
- the isolation structure 24 and the active region 21 A are then selectively recessed to form saddle type fins 31 .
- Reference numeral 24 A represents recessed portions of the isolation structure 24 .
- the patterned DARC layer 26 A is etched away when forming the saddle type fins 31 .
- the amorphous carbon pattern 25 A functions as an etch barrier.
- the amorphous carbon pattern 25 A prevents the etching of the ends of two neighboring active regions 21 A along the major axis when forming the saddle type fins 31 . Consequently, only the saddle type fin regions (refer to line B-B′) of the active region 21 A and the isolation structure 24 are etched. The active regions 21 A and the isolation structure 24 at the ends of the active regions 21 A along the major axis where the dummy saddle type fins often occur may not be etched.
- the resultant saddle type fins 31 are described in a plan view in FIG. 4 .
- FIG. 4 illustrates the resultant saddle type fins according to the first embodiment of the present invention.
- the amorphous carbon pattern 25 A formed by the combination of the FM 1 29 and the FM 2 30 exposes the saddle type fin regions (refer to line B-B′) of the active regions 21 A with rectangular type openings 100 A.
- the amorphous carbon pattern 25 A covers regions where dummy saddle type fins often occur as denoted with reference numeral 100 B.
- the saddle type fins 31 by etching using the amorphous carbon pattern 25 A reduces the etching of the ends of the active regions 21 A along the major axis.
- the dummy saddle type fins are not formed.
- the saddle type fin regions to be etched are defined in a rectangular shape by the rectangular type openings 100 A and are locally etched.
- the saddle type fins 31 according to the first embodiment may be referred to as local damascene saddle type fins (LD-SF).
- the line type FM 1 29 is used before using the island type FM 2 30 .
- an amorphous carbon pattern having substantially the same shape as the one shown in FIG. 4 may be obtained even when the island type FM 2 30 is used before using the line type FM 1 29 .
- FIG. 5A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a second embodiment of the present invention.
- a second fin mask (FM 21 ) of the fin mask combination according to the second embodiment has a shape different from the second fin mask (FM 2 ) according to the first embodiment.
- a plurality of active regions 111 are formed in a substrate.
- the substrate has a flat surface with an X axis and a Y axis.
- the active regions 111 are formed in a particular size with a major axis and a minor axis.
- the active regions 111 are disposed in a manner that the ends 114 along the major axis of two neighboring active regions 111 along the X axis are adjacent to each other, and an isolation structure 112 is formed between the adjacent active regions 111 .
- an isolation structure 112 is formed between the adjacent active regions 111 .
- the active region 111 is defined by the isolation structure 112 .
- Forming a fin mask according to the second embodiment includes using a first fin mask FM 11 and a second fin mask FM 21 in combination to form saddle type fins 113 .
- the active region 111 and the isolation structure 112 are selectively etched to form the saddle type fins 113 , that is, the active region 111 protruding in a saddle type structure.
- the first fin mask FM 11 and the second fin mask FM 21 may be sequentially used according to a given order, and the given order may be changeable. For instance, the first fin mask FM 11 may be formed first and the second fin mask FM 21 may be formed after the first fin mask FM 11 is removed.
- the second fin mask FM 21 may be formed first and the first fin mask FM 11 may be formed after the second fin mask FM 21 is removed.
- FIG. 5A illustrates both the first and second fin masks FM 11 and FM 21 together to show the relative position of the first and second fin masks FM 11 and FM 21 .
- the first fin mask FM 11 is a line type mask that is formed along a first direction
- the second fin mask FM 21 is an island type mask that is formed along a second direction that is orthogonal to the first direction.
- the saddle type fin regions of the active region 111 and the isolation structure 112 where the saddle type fins 113 are to be formed, may be locally etched by combining the two fin masks. That is, portions where dummy saddle type fins usually occur (i.e., the ends 114 along the major axis of two neighboring active regions 111 along the X axis) are not etched during an etching process for forming the saddle type fins 113 . This result may be obtained because the island type second fin mask FM 21 is applied.
- the second fin mask FM 21 may be a dumbbell-shaped island type mask formed to cover the ends 114 along the major axis of the neighboring active regions 111 and cover the isolation structure 112 between the two active regions 111 .
- the dumbbell-shaped island type mask includes a rectangular shape over the isolation structure 112 between the neighboring active regions 111 .
- the dumbbell-shaped island type mask also includes a ball or an ellipse shape over the ends 114 of each active region 111 such that the dumbbell-shaped island type mask covers the ends 114 with an increased surface area.
- the second fin mask FM 21 is formed to intersect at least partly the location where the first fin mask FM 11 was formed.
- the second fin mask FM 21 is formed as the dumbbell-shaped island type mask according to the second embodiment unlike the second fin mask FM 2 that is formed as a rectangular island type mask according to the first embodiment.
- Using the second fin mask FM 21 of the dumbbell-shaped island type may increase the margin for covering the ends 114 of the active region 111 . That is, the margin for reducing the chances of dummy saddle type fin generation at the ends 114 of the active region 111 may increase.
- the first fin mask FM 11 and the second fin mask FM 21 may be applied in a certain order (i.e., FM 11 ⁇ FM 21 or FM 21 ⁇ FM 11 ).
- a hard mask pattern transcribing the shape of the first fin mask FM 11 and the second fin mask FM 21 in combination is used as an etch barrier when forming the saddle type fins 113 .
- the etch barrier may include an amorphous carbon pattern.
- the amorphous carbon pattern may be formed by employing the first fin mask FM 11 , the second fin mask FM 21 , a DARC layer, and a polysilicon hard mask.
- the amorphous carbon pattern may be formed using the method shown in FIGS. 3A to 3E .
- FIG. 5B illustrates a scanning electron microscopic (SEM) view of a second fin mask according to the second embodiment of the present invention.
- FIG. 6A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a third embodiment of the present invention.
- the fin mask combination according to the third embodiment includes a first fin mask FM 31 of a line type and a second fin mask FM 32 of a jigsaw puzzle type for locally etching active regions 200 and an isolation structure to form saddle type fins 201 .
- the first fin mask FM 31 is a line type mask exposing only the saddle type fin regions of the active regions 200 , where the saddle type fins 201 are to be formed.
- the first fin mask FM 31 is substantially the same as the first fin masks according to the first and second embodiments.
- the second fin mask FM 32 is a jigsaw puzzle type mask. That is, the second fin mask FM 32 having the jigsaw puzzle shape covers ends of the active regions 200 along a major axis as well as between the ends. Meanwhile, the second fin mask FM 32 exposes the rest of the substrate structure through jigsaw puzzle openings 202 . Regions exposed by the jigsaw puzzle openings 202 are locally etched to form the saddle type fins 201 .
- Using the second fin mask FM 32 of jigsaw puzzle type according to the third embodiment may allow the selectivity of a photoresist layer to be maintained, which may otherwise be insufficient. Thus, the ends of the active regions 200 along the major axis where dummy saddle type fins often occur may be sufficiently covered.
- the first fin mask FM 31 and the second fin mask FM 32 are applied in a certain order (i.e., FM 31 ⁇ M 32 or FM 32 ⁇ FM 31 ).
- a hard mask pattern transcribing the shape of the first fin mask FM 31 and the second fin mask FM 32 in combination is used as an etch barrier pattern when forming the saddle type fins 201 .
- the etch barrier pattern may include an amorphous carbon pattern.
- the amorphous carbon pattern may be formed by employing the first fin mask FM 31 , the second fin mask FM 32 , a DARC layer, and a polysilicon hard mask.
- the amorphous carbon pattern may be formed using the method shown in FIGS. 3A to 3E .
- FIG. 6B illustrates a SEM view of the second fin mask shown in FIG. 6A .
- FIG. 7A illustrates a plan view of a fin mask used in fabricating a saddle type fin according to a fourth embodiment of the present invention.
- FIG. 7B illustrates a SEM view of the fin mask shown in FIG. 7A .
- a fin mask R-FM having island-shaped openings 302 is used independently without using a line type first fin mask. That is, the fin mask R-FM having the openings 302 locally exposes saddle type fin regions of active regions 300 , where saddle type fins 301 are to be formed. The rest of the substrate structure is covered by the fin mask R-FM.
- the openings 302 may have a rectangular shape as illustrated or an elliptical shape.
- Using the fin mask R-FM having the island-shaped openings 302 independently may simplify the process when compared to using two fin masks. Also, using the fin mask R-FM according to the fourth embodiment generally does not require using a polysilicon hard mask.
- the saddle type fins 301 may be formed using only amorphous carbon.
- the saddle type fins 301 may include polysilicon instead of amorphous carbon. Therefore, a hard mask stack may be simply configured using the fin mask R-FM according to the fourth embodiment. For instance, an etch barrier pattern transcribing the shape of the fin mask R-FM is used as an etch barrier when forming the saddle type fins 301 using the fin mask R-FM according to the fourth embodiment.
- the etch barrier pattern may include an amorphous carbon pattern or a polysilicon pattern.
- the etch barrier pattern may be formed by employing the fin mask R-FM and a DARC layer.
- the etch barrier pattern may be formed using the method shown in FIGS. 3A to 3E .
- the DARC layer may be directly etched using the fin mask R-FM without using the polysilicon hard mask, and the amorphous carbon may be etched using the DARC layer.
- polysilicon may be used as an etch barrier when forming the saddle type fins by forming polysilicon under the DARC layer instead of amorphous carbon.
- Saddle type fins may be formed in a local damascene form when the saddle type fins are formed using the fin mask combination or the independent fin mask R-FM according to the first to the fourth embodiments. Since the saddle type fin regions are limited and locally etched, the saddle type fins become local damascene saddle type fins (LD-SF).
- FIG. 8 illustrates a SEM view of saddle type fins according to embodiments of the present invention. The saddle type fins are formed as represented with ‘LD-SF.’
Abstract
A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis includes a first fin mask of a line type, and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
Description
- The present invention claims priority of Korean patent application numbers 10-2006-0061437 and 10-2006-0128839, filed on Jun. 30, 2006 and Dec. 15, 2006, respectively, which are incorporated by reference in their entirety.
- The present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a saddle type transistor having a saddle type fin.
- A typical cell in a three-dimensional structure for use in a dynamic random access memory (DRAM) cell includes a fin structure, a recess channel structure, and a saddle type structure. The saddle type structure includes the fin structure and the recess channel structure in combination.
-
FIG. 1A illustrates a perspective view showing a method for fabricating a typical saddle type transistor, andFIG. 1B illustrates a plan view of a fin mask. Referring toFIGS. 1A and 1B , anisolation structure 12 is formed in asubstrate 11 using a shallow trench isolation (STI) process. Thus, anactive region 11A having a major axis and a minor axis is defined. Afin mask 13 is formed over the substrate structure.Saddle type fins 14 are formed by etching using thefin mask 13. The etching for forming thesaddle type fins 14 may include etching theisolation structure 12 using thefin mask 13 and then etching theactive region 11A, or etching theactive region 11A and then etching theisolation structure 12. Thefin mask 13 is removed, and although not illustrated, a gate oxide layer, a gate electrode, and source/drain are formed to complete a saddle type transistor. - The typical method as described above uses the line
type fin mask 13 to form thesaddle type fins 14. However, in the typical method, theactive region 11A is exposed by the linetype fin mask 13 at regions predetermined for forming thesaddle type fins 14 as well as at the ends of theactive region 11A along the major axis. Thus, dummysaddle type fins 14A may be formed. The dummysaddle type fins 14A may be formed in an active region that will be connected to a storage node. Thus, leakage of the storage node and capacitance of the gate may be increased, deteriorating performance of the transistor. - Embodiments of the present invention are directed towards providing a fin mask and a method for fabricating a saddle type fin using the same, which can reduce formation of undesired dummy saddle type fins at the end of an active region along a major axis.
- In accordance with an aspect of the present invention, there is provided a fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask including: a first fin mask of a line type; and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
- In accordance with another aspect of the present invention, there is provided a fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask including: a first fin mask of a line type; and a second fin mask having openings, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
- In accordance with a still another aspect of the present invention, there is provided a fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask including island-shaped openings exposing saddle type fin regions and covering the rest of the active regions.
- In accordance with a further aspect of the present invention, there is provided a method for fabricating a saddle type fin, including: providing a substrate defining at least two active regions that have neighboring ends in a major axis; forming an etch barrier pattern over the substrate, the etch barrier pattern exposing saddle type fin regions of the active regions and covering the rest of the active regions; and etching the saddle type fin regions to form saddle type fins in a local damascene structure, wherein forming the etch barrier pattern includes forming a first fin mask and a second fin mask, and wherein the first fin mask exposes the saddle type fin regions in a line pattern and the second fin mask covers the neighboring ends of the active regions.
-
FIG. 1A illustrates a perspective view of a typical method for fabricating a saddle type fin. -
FIG. 1B illustrates a plan view of a typical fin mask. -
FIG. 2 illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a first embodiment of the present invention. -
FIGS. 3A to 3E illustrate cross-sectional views of a method for fabricating a saddle type fin according to the first embodiment of the present invention. -
FIG. 4 illustrates resultant saddle type fins according to the first embodiment of the present invention. -
FIG. 5A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a second embodiment of the present invention. -
FIG. 5B illustrates a scanning electron microscopic (SEM) view of a second fin mask according to the second embodiment of the present invention. -
FIG. 6A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a third embodiment of the present invention. -
FIG. 6B illustrates a SEM view of a second fin mask shown inFIG. 6A . -
FIG. 7A illustrates a plan view of a fin mask used in fabricating a saddle type fin according to a fourth embodiment of the present invention. -
FIG. 7B illustrates a SEM view of a fin mask shown inFIG. 7A . -
FIG. 8 illustrates a SEM view of saddle type fins according to embodiments of the present invention. - The present invention relates to a fin mask and a method for fabricating a saddle type fin using the same. Formation of dummy saddle type fins at the ends of neighboring active regions along a major axis may be reduced through using a fin mask combination that locally opens saddle type fin regions. Thus, leakage of the storage node and increased gate capacitance caused by the dummy saddle type fins may be reduced.
-
FIG. 2 illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a first embodiment of the present invention. A plurality ofactive regions 101 are formed in a substrate. The substrate has a flat surface with an X axis and a Y axis. Theactive regions 101 are formed in a certain size with a major axis and a minor axis. Theactive regions 101 are disposed in a manner that ends 104 along the major axis of two neighboringactive regions 101 along the X axis are adjacent to each other, and anisolation structure 102 is formed between the adjacentactive regions 101. Hereinafter, only one set of elements are described for convenience. - The
active region 101 is defined by theisolation structure 102. Forming a fin mask according to the first embodiment includes using a first fin mask FM1 and a second fin mask FM2 in combination to formsaddle type fins 103. Theactive region 101 and theisolation structure 102 are selectively etched to form thesaddle type fins 103, that is, theactive region 101 protruding in a saddle type structure. In the present embodiment, the first fin mask FM1 and the second fin mask FM2 may be sequentially used according to a given order, and the given order may be changeable. For instance, the first fin mask FM1 may be formed first and the second fin mask FM2 may be formed after the first fin mask FM1 is removed. On the other hand, the second fin mask FM2 may be formed first and the first fin mask FM1 may be formed after the second fin mask FM2 is removed. However,FIG. 2 illustrates both the first and second fin masks FM1 and FM2 together to show the relative position of the first and second fin masks FM1 and FM2. - The first fin mask FM1 is a line type mask that is formed along a first direction, and the second fin mask FM2 is an island type mask that is formed along a second direction that is orthogonal to the first direction. Using the first fin mask FM1 and the second fin mask FM2 in combination allows selectively etching portions of the
active region 101 and theisolation structure 102 predetermined for forming thesaddle type fins 103. That is, portions where dummy saddle type fins usually occur (i.e., theends 104 along the major axis of two neighboringactive regions 101 along the X axis) are not etched during an etching process for forming thesaddle type fins 103. This result may be obtained because the island type second fin mask FM2 is applied. - For instance, the second fin mask FM2 may be an island type mask of a rectangular shape formed to cover the
ends 104 along the major axis of the neighboringactive regions 101 and cover theisolation structure 102 between the twoactive regions 101. The second fin mask FM2 is formed at least partly to intersect the location where the first fin mask FM1 was formed. The first fin mask FM1 and the second fin mask FM2 may be applied in a certain order. A hard mask pattern transcribing the shape of the first fin mask FM1 and the second fin mask FM2 in combination is used as an etch barrier when forming thesaddle type fins 103. -
FIGS. 3A to 3E illustrate cross-sectional views of a method for fabricating a saddle type fin according to the first embodiment of the present invention. - Referring to
FIG. 3A , anisolation structure 24 is formed in asubstrate 21 using a shallow trench isolation (STI) process. Theisolation structure 24 defines anactive region 21A. Apad oxide layer 22 and apad nitride layer 23 are formed over theactive region 21A. In more detail, the STI process includes forming an oxide-based layer and a nitride-based layer over thesubstrate 21 in sequential order when forming theisolation structure 24. An etching process is performed to form trenches in thesubstrate 21 using an STI mask. The STI mask is removed. An insulation layer (e.g., a high density plasma (HDP) oxide layer) is filled in the trenches, and a chemical mechanical polishing (CMP) process is performed. Consequently, thepad oxide layer 22 and thepad nitride layer 23 are formed over theactive region 21A after the CMP process is performed. Theactive region 21A includes an island type pattern having a major axis and a minor axis. In a plan view, theactive region 21A has substantially the same shape and layout as theactive regions 101 shown inFIG. 2 . - An
amorphous carbon layer 25, a dielectric anti-reflective coating (DARC)layer 26, a polysiliconhard mask 27, and a first patterned bottom anti-reflective coating (BARC)layer 28A are formed over the resulting substrate structure. In more detail, theamorphous carbon layer 25, theDARC layer 26, a polysilicon hard mask layer, and a first BARC layer are formed over the substrate structure. The selectivity between theDARC layer 26 and theamorphous carbon layer 25 is approximately 10:1 or higher. Thus, theDARC layer 26 functions as a hard mask when etching theamorphous carbon layer 25. The polysilicon hard mask layer functions as a hard mask when etching theDARC layer 26. Both theDARC layer 26 and the polysilicon hard mask layer may have a thickness of approximately 1,000 Å or less. Theamorphous carbon layer 25 may be used as a hard mask for forming a subsequent saddle type fin. Theamorphous carbon layer 25 may have a thickness of approximately 500 Å or greater. - A first fin mask (FM1) 29 is formed over the first BARC layer. The
FM1 29 includes a photoresist layer patterned by a photo-exposure and developing process. TheFM1 29 includes line typefirst openings 29A exposing saddle type fin regions. That is, theFM1 29 is formed in a line mask shape, wherein thefirst openings 29A are formed to intersect with the major axis of theactive region 21A. Theactive region 21A and theFM1 29 are disposed in substantially the same manner as theactive regions 101 and the first fin mask FM1 shown inFIG. 2 . - An etching process is performed to etch the first BARC layer and the polysilicon hard mask layer using the
FM1 29 as an etch mask. Consequently, the first patternedBARC layer 28A and the polysiliconhard mask 27 are formed. Thus, the polysiliconhard mask 27 is formed in a line type pattern, transcribing the shape of theFM1 29. - Referring to
FIG. 3B , theFM1 29 is removed. The firstpatterned BARC layer 28A is also removed at this time. Asecond BARC layer 28B is formed over the resultant substrate structure. A second fin mask (FM2) 30 is formed over thesecond BARC layer 28B. TheFM2 30 includes a photoresist layer patterned by a photo-exposure and developing process. In a plan view, theFM2 30 covers the ends of two neighboringactive regions 21A along the major axis. Thus, theFM2 30 exposes the saddle type fin regions through asecond opening 30A, and yet covers the ends of theactive regions 21A along the major axis where the dummy saddle type fins may form and theisolation structure 24 formed between the ends. TheFM2 30 is formed in an island shape. Thus, theFM2 30 and theFM1 29 are shaped differently. - Referring to
FIG. 3C , an etching process is performed using theFM2 30 as an etch mask. That is, thesecond BARC layer 28B and theDARC layer 26 are etched to form a patternedsecond BARC layer 28C and apatterned DARC layer 26A. At this time, the polysiliconhard mask 27 may not be etched. Thus, theDARC layer 26 below the polysiliconhard mask 27 is etched in a manner such that the patternedDARC layer 26A is self-aligned by the polysiliconhard mask 27. Referring toFIG. 3D , theFM2 30 is removed. The patternedsecond BARC layer 28C is also removed at this time. - Referring to
FIG. 3E , the polysiliconhard mask 27 is removed. Theamorphous carbon layer 25 is etched to form anamorphous carbon pattern 25A using the patternedDARC layer 26A as a mask. A plan view of theamorphous carbon pattern 25A transcribing the shape of the patternedDARC layer 26A is shown inFIG. 4 . Thepad nitride layer 23 and thepad oxide layer 22 are etched to form a patternedpad nitride layer 23A and apad oxide layer 22A. Theisolation structure 24 and theactive region 21A are then selectively recessed to formsaddle type fins 31.Reference numeral 24A represents recessed portions of theisolation structure 24. The patternedDARC layer 26A is etched away when forming thesaddle type fins 31. Theamorphous carbon pattern 25A functions as an etch barrier. - The
amorphous carbon pattern 25A prevents the etching of the ends of two neighboringactive regions 21A along the major axis when forming thesaddle type fins 31. Consequently, only the saddle type fin regions (refer to line B-B′) of theactive region 21A and theisolation structure 24 are etched. Theactive regions 21A and theisolation structure 24 at the ends of theactive regions 21A along the major axis where the dummy saddle type fins often occur may not be etched. The resultantsaddle type fins 31 are described in a plan view inFIG. 4 . -
FIG. 4 illustrates the resultant saddle type fins according to the first embodiment of the present invention. Theamorphous carbon pattern 25A formed by the combination of theFM1 29 and theFM2 30 exposes the saddle type fin regions (refer to line B-B′) of theactive regions 21A withrectangular type openings 100A. Theamorphous carbon pattern 25A covers regions where dummy saddle type fins often occur as denoted withreference numeral 100B. - Accordingly, forming the
saddle type fins 31 by etching using theamorphous carbon pattern 25A reduces the etching of the ends of theactive regions 21A along the major axis. Thus, the dummy saddle type fins are not formed. The saddle type fin regions to be etched are defined in a rectangular shape by therectangular type openings 100A and are locally etched. Thus, thesaddle type fins 31 according to the first embodiment may be referred to as local damascene saddle type fins (LD-SF). - In the aforementioned first embodiment, the
line type FM1 29 is used before using theisland type FM2 30. However, an amorphous carbon pattern having substantially the same shape as the one shown inFIG. 4 may be obtained even when theisland type FM2 30 is used before using theline type FM1 29. -
FIG. 5A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a second embodiment of the present invention. A second fin mask (FM21) of the fin mask combination according to the second embodiment has a shape different from the second fin mask (FM2) according to the first embodiment. - A plurality of
active regions 111 are formed in a substrate. The substrate has a flat surface with an X axis and a Y axis. Theactive regions 111 are formed in a particular size with a major axis and a minor axis. Theactive regions 111 are disposed in a manner that the ends 114 along the major axis of two neighboringactive regions 111 along the X axis are adjacent to each other, and anisolation structure 112 is formed between the adjacentactive regions 111. Hereinafter, only one set of elements are described for convenience. - The
active region 111 is defined by theisolation structure 112. Forming a fin mask according to the second embodiment includes using a first fin mask FM11 and a second fin mask FM21 in combination to formsaddle type fins 113. Theactive region 111 and theisolation structure 112 are selectively etched to form thesaddle type fins 113, that is, theactive region 111 protruding in a saddle type structure. In the present embodiment, the first fin mask FM11 and the second fin mask FM21 may be sequentially used according to a given order, and the given order may be changeable. For instance, the first fin mask FM11 may be formed first and the second fin mask FM21 may be formed after the first fin mask FM11 is removed. On the other hand, the second fin mask FM21 may be formed first and the first fin mask FM11 may be formed after the second fin mask FM21 is removed. However,FIG. 5A illustrates both the first and second fin masks FM11 and FM21 together to show the relative position of the first and second fin masks FM11 and FM21. - The first fin mask FM11 is a line type mask that is formed along a first direction, and the second fin mask FM21 is an island type mask that is formed along a second direction that is orthogonal to the first direction. The saddle type fin regions of the
active region 111 and theisolation structure 112, where thesaddle type fins 113 are to be formed, may be locally etched by combining the two fin masks. That is, portions where dummy saddle type fins usually occur (i.e., theends 114 along the major axis of two neighboringactive regions 111 along the X axis) are not etched during an etching process for forming thesaddle type fins 113. This result may be obtained because the island type second fin mask FM21 is applied. - For instance, the second fin mask FM21 may be a dumbbell-shaped island type mask formed to cover the
ends 114 along the major axis of the neighboringactive regions 111 and cover theisolation structure 112 between the twoactive regions 111. The dumbbell-shaped island type mask includes a rectangular shape over theisolation structure 112 between the neighboringactive regions 111. The dumbbell-shaped island type mask also includes a ball or an ellipse shape over theends 114 of eachactive region 111 such that the dumbbell-shaped island type mask covers theends 114 with an increased surface area. The second fin mask FM21 is formed to intersect at least partly the location where the first fin mask FM11 was formed. - The second fin mask FM21 is formed as the dumbbell-shaped island type mask according to the second embodiment unlike the second fin mask FM2 that is formed as a rectangular island type mask according to the first embodiment. Using the second fin mask FM21 of the dumbbell-shaped island type may increase the margin for covering the
ends 114 of theactive region 111. That is, the margin for reducing the chances of dummy saddle type fin generation at theends 114 of theactive region 111 may increase. - The first fin mask FM11 and the second fin mask FM21 may be applied in a certain order (i.e., FM11→FM21 or FM21→FM11). A hard mask pattern transcribing the shape of the first fin mask FM11 and the second fin mask FM21 in combination is used as an etch barrier when forming the
saddle type fins 113. The etch barrier may include an amorphous carbon pattern. The amorphous carbon pattern may be formed by employing the first fin mask FM11, the second fin mask FM21, a DARC layer, and a polysilicon hard mask. The amorphous carbon pattern may be formed using the method shown inFIGS. 3A to 3E .FIG. 5B illustrates a scanning electron microscopic (SEM) view of a second fin mask according to the second embodiment of the present invention. -
FIG. 6A illustrates a plan view of a fin mask combination used in fabricating a saddle type fin according to a third embodiment of the present invention. The fin mask combination according to the third embodiment includes a first fin mask FM31 of a line type and a second fin mask FM32 of a jigsaw puzzle type for locally etchingactive regions 200 and an isolation structure to formsaddle type fins 201. - The first fin mask FM31 is a line type mask exposing only the saddle type fin regions of the
active regions 200, where thesaddle type fins 201 are to be formed. The first fin mask FM31 is substantially the same as the first fin masks according to the first and second embodiments. The second fin mask FM32 is a jigsaw puzzle type mask. That is, the second fin mask FM32 having the jigsaw puzzle shape covers ends of theactive regions 200 along a major axis as well as between the ends. Meanwhile, the second fin mask FM32 exposes the rest of the substrate structure throughjigsaw puzzle openings 202. Regions exposed by thejigsaw puzzle openings 202 are locally etched to form thesaddle type fins 201. - Using the second fin mask FM32 of jigsaw puzzle type according to the third embodiment may allow the selectivity of a photoresist layer to be maintained, which may otherwise be insufficient. Thus, the ends of the
active regions 200 along the major axis where dummy saddle type fins often occur may be sufficiently covered. - The first fin mask FM31 and the second fin mask FM32 are applied in a certain order (i.e., FM31→M32 or FM32→FM31). A hard mask pattern transcribing the shape of the first fin mask FM31 and the second fin mask FM32 in combination is used as an etch barrier pattern when forming the
saddle type fins 201. The etch barrier pattern may include an amorphous carbon pattern. The amorphous carbon pattern may be formed by employing the first fin mask FM31, the second fin mask FM32, a DARC layer, and a polysilicon hard mask. The amorphous carbon pattern may be formed using the method shown inFIGS. 3A to 3E .FIG. 6B illustrates a SEM view of the second fin mask shown inFIG. 6A . -
FIG. 7A illustrates a plan view of a fin mask used in fabricating a saddle type fin according to a fourth embodiment of the present invention.FIG. 7B illustrates a SEM view of the fin mask shown inFIG. 7A . - Referring to
FIG. 7A , unlike the first to third embodiments, a fin mask R-FM having island-shapedopenings 302 is used independently without using a line type first fin mask. That is, the fin mask R-FM having theopenings 302 locally exposes saddle type fin regions ofactive regions 300, where saddle typefins 301 are to be formed. The rest of the substrate structure is covered by the fin mask R-FM. Theopenings 302 may have a rectangular shape as illustrated or an elliptical shape. - Using the fin mask R-FM having the island-shaped
openings 302 independently may simplify the process when compared to using two fin masks. Also, using the fin mask R-FM according to the fourth embodiment generally does not require using a polysilicon hard mask. Thesaddle type fins 301 may be formed using only amorphous carbon. Thesaddle type fins 301 may include polysilicon instead of amorphous carbon. Therefore, a hard mask stack may be simply configured using the fin mask R-FM according to the fourth embodiment. For instance, an etch barrier pattern transcribing the shape of the fin mask R-FM is used as an etch barrier when forming thesaddle type fins 301 using the fin mask R-FM according to the fourth embodiment. The etch barrier pattern may include an amorphous carbon pattern or a polysilicon pattern. The etch barrier pattern may be formed by employing the fin mask R-FM and a DARC layer. The etch barrier pattern may be formed using the method shown inFIGS. 3A to 3E . According to the fourth embodiment, the DARC layer may be directly etched using the fin mask R-FM without using the polysilicon hard mask, and the amorphous carbon may be etched using the DARC layer. Also, polysilicon may be used as an etch barrier when forming the saddle type fins by forming polysilicon under the DARC layer instead of amorphous carbon. - Saddle type fins may be formed in a local damascene form when the saddle type fins are formed using the fin mask combination or the independent fin mask R-FM according to the first to the fourth embodiments. Since the saddle type fin regions are limited and locally etched, the saddle type fins become local damascene saddle type fins (LD-SF).
FIG. 8 illustrates a SEM view of saddle type fins according to embodiments of the present invention. The saddle type fins are formed as represented with ‘LD-SF.’ - While the present invention has been described with respect to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
Claims (24)
1. A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising:
a first fin mask of a line type; and
a second fin mask of an island type,
wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
2. The fin mask of claim 1 , wherein the second fin mask has a rectangular shape overlapping the first fin mask.
3. The fin mask of claim 1 , wherein the second fin mask is formed in a rectangular shape overlapping the first fin mask, wherein portions of the second fin mask covering the ends of the active regions along the major axis have a larger surface area than the ends of the active regions.
4. The fin mask of claim 3 , wherein the portions of the second fin mask covering the ends of the active regions along the major axis are formed in a ball or an ellipse shape.
5. A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising:
a first fin mask of a line type; and
a second fin mask having openings,
wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.
6. The fin mask of claim 5 , wherein the openings of the second fin mask are formed in an island shape, wherein the island shape includes a jigsaw puzzle shape.
7. A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis, the fin mask comprising island-shaped openings exposing saddle type fin regions and covering the rest of the active regions.
8. The fin mask of claim 7 , wherein the openings are formed in a rectangular or an ellipse shape.
9. A method for fabricating a saddle type fin, the method comprising:
providing a substrate defining at least two active regions that have neighboring ends in a major axis;
forming an etch barrier pattern over the substrate, the etch barrier pattern exposing saddle type fin regions of the active regions and covering the rest of the active regions; and
etching the saddle type fin regions to form saddle type fins in a local damascene structure,
wherein forming the etch barrier pattern comprises forming a first fin mask and a second fin mask, and
wherein the first fin mask exposes the saddle type fin regions in a line pattern and the second fin mask covers the neighboring ends of the active regions.
10. The method of claim 9 , wherein the first fin mask is a line type and the second fin mask is an island type, the second fin mask being formed after the first fin mask is removed.
11. The method of claim 10 , wherein the second fin mask is formed in an island pattern comprising a rectangular shape overlapping the first fin mask, wherein portions of the second fin mask covering the ends of the active regions have a larger surface area than the ends of the active regions.
12. The method of claim 11 , wherein the portions of the second fin mask covering the ends of the active regions have a round shape.
13. The method of claim 10 , wherein the etch barrier pattern formed by the first and second fin masks in combination comprises an amorphous carbon pattern.
14. The method of claim 13 , wherein forming the amorphous carbon pattern comprises:
forming an amorphous carbon layer;
forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;
forming a polysilicon layer over the DARC layer;
etching the polysilicon layer using the first fin mask;
etching the DARC layer using the second fin mask; and
etching the amorphous carbon layer using the DARC layer.
15. The method of claim 13 , wherein forming the amorphous carbon pattern comprises:
forming an amorphous carbon layer;
forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;
forming a polysilicon layer over the DARC layer;
etching the polysilicon layer using the second fin mask;
etching the DARC layer using the first fin mask; and
etching the amorphous carbon layer using the DARC layer.
16. The method of claim 9 , wherein forming the etch barrier pattern comprises forming a first fin mask and a second fin mask in combination, wherein the first fin mask exposes the saddle type fin regions in a line shape and the second fin mask exposes the saddle type fin regions in an island pattern comprising a jigsaw puzzle shape and covers the neighboring ends of the active regions.
17. The method of claim 16 , wherein the etch barrier pattern formed by the first and second fin masks in combination comprises an amorphous carbon pattern.
18. The method of claim 17 , wherein forming the amorphous carbon pattern comprises:
forming an amorphous carbon layer;
forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;
forming a polysilicon layer over the DARC layer;
etching the polysilicon layer using the first fin mask;
etching the DARC layer using the second fin mask; and
etching the amorphous carbon layer using the DARC layer.
19. The method of claim 17 , wherein forming the amorphous carbon pattern comprises:
forming an amorphous carbon layer;
forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;
forming a polysilicon layer over the DARC layer;
etching the polysilicon layer using the second fin mask;
etching the DARC layer using the first fin mask; and
etching the amorphous carbon layer using the DARC layer.
20. The method of claim 9 , wherein forming the etch barrier pattern comprises using a fin mask having openings exposing the saddle type fins and covering the rest regions.
21. The method of claim 20 , wherein the openings are formed in a rectangular or an ellipse shape.
22. The method of claim 20 , wherein the etch barrier pattern comprises an amorphous carbon pattern or a polysilicon pattern.
23. The method of claim 22 , wherein forming the amorphous carbon pattern comprises:
forming an amorphous carbon layer;
forming a dielectric anti-reflective coating (DARC) layer over the amorphous carbon layer;
etching the DARC layer using the fin mask; and
etching the amorphous carbon layer using the DARC layer.
24. The method of claim 22 , wherein forming the polysilicon pattern comprises:
forming a polysilicon layer;
forming a dielectric anti-reflective coating (DARC) layer over the polysilicon layer;
etching the DARC layer using the fin mask; and
etching the polysilicon layer using the DARC layer.
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US12/495,292 US20090263973A1 (en) | 2006-06-30 | 2009-06-30 | Fin mask and method for fabricating saddle type fin using the same |
US12/891,701 US8377826B2 (en) | 2006-06-30 | 2010-09-27 | Fin mask and method for fabricating saddle type fin using the same |
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KR10-2006-0061437 | 2006-06-30 | ||
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KR1020060128839A KR100844955B1 (en) | 2006-06-30 | 2006-12-15 | Fin mask and method for manufacturing saddle fin using the same |
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US11/679,179 Abandoned US20080003833A1 (en) | 2006-06-30 | 2007-02-26 | Fin mask and method for fabricating saddle type fin using the same |
US12/495,292 Abandoned US20090263973A1 (en) | 2006-06-30 | 2009-06-30 | Fin mask and method for fabricating saddle type fin using the same |
US12/891,701 Active 2027-03-19 US8377826B2 (en) | 2006-06-30 | 2010-09-27 | Fin mask and method for fabricating saddle type fin using the same |
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US20180012895A1 (en) * | 2016-05-11 | 2018-01-11 | Globalfoundries Inc. | Stable and reliable finfet sram with improved beta ratio |
CN112701152A (en) * | 2019-10-23 | 2021-04-23 | 南亚科技股份有限公司 | Semiconductor structure and manufacturing method thereof |
US20220108990A1 (en) * | 2016-04-28 | 2022-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making semiconductor device which includes fins |
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JP2011054629A (en) | 2009-08-31 | 2011-03-17 | Elpida Memory Inc | Semiconductor device and manufacturing method thereof |
US8569125B2 (en) * | 2011-11-30 | 2013-10-29 | International Business Machines Corporation | FinFET with improved gate planarity |
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US20210126087A1 (en) * | 2019-10-23 | 2021-04-29 | Nanya Technology Corporation | Semiconductor structure and fabrication method thereof |
US20220102484A1 (en) * | 2019-10-23 | 2022-03-31 | Nanya Technology Corporation | Method of fabricating semiconductor structure |
US11502163B2 (en) * | 2019-10-23 | 2022-11-15 | Nanya Technology Corporation | Semiconductor structure and fabrication method thereof |
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Also Published As
Publication number | Publication date |
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US20090263973A1 (en) | 2009-10-22 |
JP2008016842A (en) | 2008-01-24 |
US20110014792A1 (en) | 2011-01-20 |
US8377826B2 (en) | 2013-02-19 |
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