US20070296968A1 - System and method for monitoring laser shock processing - Google Patents
System and method for monitoring laser shock processing Download PDFInfo
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- US20070296968A1 US20070296968A1 US11/849,815 US84981507A US2007296968A1 US 20070296968 A1 US20070296968 A1 US 20070296968A1 US 84981507 A US84981507 A US 84981507A US 2007296968 A1 US2007296968 A1 US 2007296968A1
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 230000035939 shock Effects 0.000 title claims abstract description 41
- 238000012544 monitoring process Methods 0.000 title claims abstract description 14
- 238000012545 processing Methods 0.000 title description 5
- 238000001228 spectrum Methods 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 36
- 230000005855 radiation Effects 0.000 claims abstract description 17
- 238000004886 process control Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 10
- 238000000295 emission spectrum Methods 0.000 description 16
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009661 fatigue test Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000003058 plasma substitute Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010972 statistical evaluation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/718—Laser microanalysis, i.e. with formation of sample plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/356—Working by laser beam, e.g. welding, cutting or boring for surface treatment by shock processing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/06—Surface hardening
- C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
- C21D10/005—Modifying the physical properties by methods other than heat treatment or deformation by laser shock processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D11/00—Process control or regulation for heat treatments
Definitions
- the invention relates generally to process monitoring during laser treatment of a metallic surface, and in particular to real-time monitoring of a laser shock peening process by analyzing laser plasma emissions.
- LSP Laser shock peening
- a metal work piece is an effective way of improving fatigue life of a metal work piece.
- LSP finds wide application in the aerospace and automotive industries as a method for improving the fatigue properties of various metallic components, such as aluminum alloys, steel alloys, titanium based alloys, and nickel based alloys, among others.
- a surface of the work piece is covered by an opaque layer and a transparent overlay.
- the opaque layer may include a black plastic tape or a black paint coated on the surface of the work piece.
- the transparent overlay generally comprises a layer of water disposed adjacent to the opaque layer.
- a shock wave is reflected from the tape and travels backward through the transparent layer. Due to shock impedance mismatch, this backward traveling wave is reflected by the transparent layer toward the work piece.
- the shock waves ultimately combine to impart plastic strain to the work piece. This results in the deformation of the work piece and imparts compressive residual stresses, which remain following processing. It is these compressive residual stresses in the work piece, which effectively reduce crack propagation rates in the work piece and, thus, improves fatigue properties of the work piece.
- a quartz gauge for pressure measurements during laser shock processing.
- a quartz gauge is based on the piezoelectric behavior of quartz crystals.
- a quartz crystal is disposed on one surface of the work piece to be processed.
- Another technique to determine the quality of an LSP process includes performing accelerated fatigue test on a work piece after the work piece has been processed.
- the LSP process and the work piece material are expensive, it is possible to sample only a limited number of parts for an accelerated fatigue test.
- a method of monitoring a laser shock peening process is provided.
- a line spectrum is produced of radiation emitted from a plasma produced by a laser shock peening system.
- the line spectrum is converted into a signal representative of the line spectrum.
- the signal representative of the line spectrum is further converted into a graphical representation of the line spectrum, and a curve fit is performed for this graphical representation.
- a line broadening in the curve fit of the graphical representation of the line spectrum is then compared to a line broadening in the graphical representation of the line spectrum, to establish whether the line spectrum corresponds to a desired line spectrum.
- a method of monitoring laser shock peening process is provided.
- a line spectrum is produced of radiation emitted from a plasma produced by the laser shock peening process.
- At least one of wavelength or frequency of an emission peak in the line spectrum of radiation emitted from the plasma is then compared with at least one of wavelength or frequency of an emission peak in an expected line spectrum of radiation emitted from a material of the work piece, to verify that at least a portion of the laser induced plasma is produced from the work piece material.
- a laser shock peening system in yet another aspect, includes a pulsed laser, a spectrometer and a spectrum analyzer.
- the pulsed laser is operable to direct a pulsed laser beam toward an opaque layer disposed on a surface of a work piece.
- the spectrometer is operable to produce a line spectrum of radiation emitted by a plasma produced when the pulsed laser strikes the opaque layer.
- the spectrum analyzer is operable to compare line broadening of the line spectrum about an emission peak with line broadening about a peak in a defined line shape.
- FIG. 1 is a schematic representation of a laser shock peening system according to aspects of the present technique
- FIG. 2 is a graphical illustration of a representative line spectrum around a specific wavelength ⁇ 0 of plasma radiation produced in an LSP process.
- FIG. 3 is a comparative graphical illustration of a line spectrum around a specific wavelength ⁇ 0 for an LSP process having a transparent layer confinement over a work piece, and a Lorentzian curve fit of the same;
- FIG. 4 is a comparative graphical illustration of a line spectrum around a specific wavelength ⁇ 0 for an LSP process having a transparent layer confinement over a work piece, and a Gaussian curve fit of the same;
- FIG. 5 is a comparative graphical illustration of a line spectrum around a specific wavelength ⁇ 0 for an LSP process without a transparent layer confinement over a work piece, and a Lorentzian curve fit of the same;
- FIG. 6 is a comparative graphical illustration of a line spectrum for an LSP process without a transparent layer confinement over a work piece, and a Gaussian curve fit of the same;
- FIG. 7 is a graphical illustration of a line spectrum of radiation produced by laser induced plasma, in case of a burn-through of the opaque layer.
- the present technique provides a non-intrusive, real-time monitoring of a laser shock peening process, which is substantially free from environmental influences.
- the technique described is based on analysis of line broadening of plasma emission during an LSP process, so as to control the quality of every laser shot in real-time.
- the illustrated laser shock peening system 10 comprises a laser shock peening unit 12 and a monitoring system 14 .
- the laser shock peening unit 12 is controlled by a process control system 16 that is in communication with the monitoring system 14 .
- the process control system 16 is adapted to adjust process parameters of the laser shock peening unit 12 based upon a signal received from the monitoring system 14 .
- the laser shock peening unit 12 comprises a work piece 18 held in position by a holder 20 .
- An opaque overlay 22 and a transparent overlay 24 are applied to one surface of the work piece 18 .
- the opaque overlay 22 may include, for example, a black tape or a black paint coated on one surface of the work piece 18 .
- the transparent overlay 24 comprises a film of running water delivered, for example, by a flow circulating device 25 , such as, a pump.
- the transparent overlay 24 is disposed adjacent to the opaque overlay 22 .
- the transparent overlay 24 may comprise another material, such as a transparent tape.
- the above-described arrangement may be oriented vertically, or at any desired angle with respect to the vertical.
- a pulsed laser beam 26 is directed from a pulsed laser 28 onto the work piece 18 .
- the laser 28 may comprise, for example, a pulsed Nd:YAG laser or a Nd:Glass laser. However, it is understood that other pulsed lasers may be used to perform laser shock peening.
- a lens 30 may be used to focus the laser beam 26 onto the work piece 18 .
- the laser beam 26 passes through the transparent layer 24 and is absorbed by the opaque layer 22 .
- the intensity of the focused laser beam causes the opaque layer 22 to vaporize, producing a plasma 32 .
- the temperature at which the opaque layer 22 vaporizes may be on the order of 10,000 K.
- the plasma expansion is confined substantially by the transparent overlay 24 , resulting in a pressure pulse that is reflected from the transparent layer 24 back towards the work piece 18 .
- the pressure pulse caused by this reflected wave superimposes with a forward traveling shock wave produced by an initial ablation of the opaque layer 22 and causes the work piece 18 to deform, which imparts deep compressive stresses within the work piece 18 . It has been observed that the magnitude of the pressure pulse is higher when the plasma expansion is confined by a transparent overlay, such as the water layer described above, than without a transparent overlay.
- the plasma 32 produced by the vaporization of the opaque layer 22 produces an emission of light 34 .
- light from these spectral emissions 34 also referred to as plasma emissions, is focused by a lens 36 into an entrance slit of a spectrometer 38 .
- a spectrometer 38 is an instrument for measuring spectral intensity of light at a predefined wavelength range.
- the spectral emissions 34 are dispersed into their constituent wavelengths by the spectrometer.
- An image of the spectrum of light produced in the spectrometer 38 is taken by a camera 40 .
- the camera 40 may include a gated-intensified charge-coupled device (CCD), or a complimentary metal oxide semiconductor (CMOS) camera, amongst other image recording devices.
- CCD gated-intensified charge-coupled device
- CMOS complimentary metal oxide semiconductor
- the image from the camera 40 is fed to a spectrum analyzer 42 for an analysis of the spectral emissions captured by the image.
- the spectrum analyzer 42 is configured to generate a line spectrum of the plasma emission 34 based on light intensity data captured in the image taken by the camera 40 .
- the spectrum analyzer 42 may include, for example, a processing unit, which implements an executable software code.
- the spectrum analyzer 42 may include a monitor for visual display of results.
- the spectrum analyzer is a computer with special data processing software which enables a computer to perform an analysis of the spectral emissions captured by the image from the camera 40 .
- FIG. 2 illustrates an example of a line spectrum, represented by reference numeral 44 , of light received from a plasma produced by a laser shock peening process.
- the line spectrum 44 has an emission peak 46 at a specific wavelength ( ⁇ O ).
- ⁇ O a specific wavelength
- the line spectrum 44 has a general bell-shape.
- the bell-shape of the line spectrum 44 around the emission peak 46 is referred to as line broadening.
- line broadening There are several effects that cause the spectral line to broaden around the spectral peak in a plasma emission, such as: natural broadening, thermal broadening, collisional broadening, and Stark broadening.
- Natural line broadening results from the fact that excited levels of atoms have certain mean lives, and these mean lives, by virtue of the Heisenberg's uncertainty principle, imply a spread in the energy values. The spread in energy values of the excited atoms causes light of different wavelengths to be emitted. Natural line broadening generally results in a spectral emission having a Lorentzian line shape. Since an LSP process generally produces line spectra that have lifetimes of hundreds of nanoseconds, natural line broadening is on the order of one megahertz. Hence, the effect of natural line broadening is generally insignificant in LSP processes. Thermal broadening is caused by the Doppler frequency shift of the moving particles at high temperatures, and produces a spectral emission having a Gaussian line shape.
- Collisional broadening of spectral emissions occurs due to the high pressure of ions and neutrals, and has a Lorentzian line shape.
- Stark broadening is caused by interaction among electrons or particles with a strong permanent electrical dipole moment and is indicative of the number density of electrons in an area.
- Stark broadening is also Lorentzian in line shape.
- the operating conditions of the laser shock peening process will determine which of these line broadening factors dominates the emission line produced by the LSP system 10 .
- the transparent overlay 24 confines the plasma 32 and the resulting pressure is high in the confined volume.
- the collisional broadening and the Stark broadening dominate the line broadening factors.
- the line emission has a substantially Lorentzian line shape.
- the line broadening is influenced by both temperature and pressure, such that thermal broadening is a factor and the line broadening has a Voigt line shape, or a convolution between Gaussian and Lorentzian line shapes.
- a 0 is amplitude of the peak at the wavelength ⁇ 0 ;
- a 1 is the central wavelength ⁇ 0 of the peak
- a 2 is the width of the spectral emission about wavelength ⁇ 0 .
- a 0 is amplitude of the peak at the wavelength ⁇ 0 ;
- a 1 is the central wavelength ⁇ 0 of the peak
- a 2 is the width of the spectral emission about wavelength ⁇ 0 .
- the spectrum analyzer 42 in the illustrated embodiment is adapted to determine the closeness of the line broadening during the LSP process to a Lorentzian line shape and a Gaussian line shape. Conformity of the emission spectrum with the Lorentzian line shape is indicative of proper operation of the LSP process, whereas a lack of conformity with the Lorentzian line shape and conformity with a Gaussian line shape are indicative of an improper operating condition in the LSP process.
- the spectrum analyzer 42 is adapted to compute a parameter indicative of the closeness of the emission spectrum to a Lorentzian curve fit or a Gaussian curve fit of the emission spectrum and transmit the signal to the process control system 16 .
- Such a parameter may include, for example a coefficient of multiple determination or R 2 value.
- the spectrum analyzer may compare the coefficient of multiple determination from the Lorentzian curve fit to the coefficient of multiple determination of the Gaussian curve fit. If the coefficient of multiple determination of the Lorentzian curve fit is greater than the coefficient of multiple determination of the Gaussian curve fit, then the line broadening is closer to Lorentzian than Gaussian.
- the process control system 16 may stop operation of the LSP system 10 or alter the operation of one or more components of the LSP system 10 based on the analysis of the data.
- FIGS. 3 and 4 an example of an emission spectrum 48 produced by an LSP system that is operating correctly is illustrated.
- the emission spectrum 48 has a peak 50 at a wavelength ( ⁇ O ).
- FIG. 3 illustrates a Lorentzian curve fit 52 of the emission line 48
- FIG. 4 illustrates a Gaussian curve fit 54 of the emission line 48 .
- the intensity of the laser beam 26 and the confinement of the layer of water 24 is sufficient to produce a plasma 32 having a sufficient pressure to enable the collisional broadening and the Stark broadening to dominate the line broadening factors.
- the Lorentzian curve 52 illustrated in FIG. 3 exhibits a reasonably high degree of conformity with the emission spectrum 48 .
- the emission spectrum 48 does not exhibit a high degree of conformity with the Gaussian curve fit 54 of FIG. 4 . Because the emission spectrum 48 exhibits a high degree of conformity with the Lorentzian curve fit 52 and not the Gaussian curve fit 54 , the emission spectrum 48 evidences that the LSP system 10 is operating properly, e.g., with the proper water confinement of the plasma.
- FIGS. 5 and 6 an example of an emission spectrum 56 produced by an LSP system that does not have proper water confinement is illustrated.
- the emission spectrum 56 has a peak 58 at a wavelength ( ⁇ O ).
- FIG. 5 illustrates a Lorentzian curve fit 60 of the emission line 48
- FIG. 6 illustrates a Gaussian curve fit 62 of the emission line 48 .
- the intensity of the laser beam 26 or the confinement of the layer of water 24 does not enable the plasma 32 to achieve a sufficient pressure to enable collisional broadening and the Stark broadening to dominate the line broadening factors. Instead, thermal broadening also influences the line broadening factors.
- the emission spectrum 48 does not exhibit a reasonably high degree of conformity with the emission spectrum 56 .
- the emission spectrum 56 does exhibit some degree of conformity with the Gaussian curve fit 54 of FIG. 6 .
- the emission spectrum 48 does not exhibit a high degree of conformity with the Lorentzian curve fit 52 and does exhibit conformity with the Gaussian curve fit 54 , the emission spectrum 48 evidences that the LSP system 10 is not operating properly, e.g., the LSP system does not have proper water confinement of the plasma.
- the process control system 16 may stop operation of the LSP system 10 , generate an alarm, or modify the operation of one or more components of the LSP system 10 .
- the control system 16 may be operable to increase or decrease the laser energy, laser beam diameter at the work piece, the rise time, the pulse width of the laser beam 26 , or the thickness of the transparent layer 24 to provide the desired degree of conformity with the Lorentzian line shape.
- the present technique can also be used to detect a failure of the LSP process.
- the present technique can be used to detect a burn-through of the opaque layer.
- the opaque layer 22 is vaporized to an extent such that portion of the laser beam 26 is incident directly on the work piece 18 , resulting in plasma emission also from the work piece material.
- FIG. 7 shows a line spectrum 64 of plasma spectral emission solely from the opaque layer, which has spectral peak at wavelength ⁇ 0 66 , but no spectral peak at wavelength ⁇ B .
- FIG. 8 shows a line spectrum 68 of plasma spectral emission solely from the material of work piece, which has a characteristic peak 70 at wavelength ⁇ B .
- FIG. 9 illustrates a line spectrum 72 produced by a burn-through of the opaque layer.
- the line spectrum 72 for the burn-through case comprises significant spectrum spectral peaks 76 and 78 , which occur respectively at wavelength ⁇ B , which is a characteristic of work piece material, and at wavelength ⁇ 0 , which is a characteristic of the opaque material.
- a burn-through condition can thus be detected by the presence of an emission peak 76 at a wavelength ⁇ B characteristic of the work piece material, along with the emission peak 74 of the opaque layer, which occurs at wavelength ⁇ O .
- the control system 16 may shut down the system 10 to enable the problem causing the burn-through to be corrected or may alter the operation of the LSP system to correct this condition.
- the present technique can be used to analyze every laser shot on the work piece directly and in real time. Therefore, the quality of every laser shot can be guaranteed.
- the technique described is non-intrusive, as it involves analysis of the laser induced plasma emission, which is a by-product of the LSP process.
- the method uses line broadening of the plasma emission around an emission peak, and not the absolute signal intensity at an exact wavelength, it is substantially free from environmental influences such as, for example, fluctuations in room light or laser flashlamps, spectrometer absolute wavelength variation, or misalignment of the monitoring system due to system vibration or other causes, amongst others.
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Abstract
A method and system for monitoring laser shock peening of a work piece. A line spectrum is obtained from radiation emitted by a plasma produced by a laser shock peening process. The shape of the line spectrum about its emission peak is compared to a defined line shape to verify proper operation of the laser shock peening process. The line shape may be a Lorentzian line shape corresponding to a desired line shape. The line shape may a Gaussian line shape corresponding to an undesired line shape. The system can also detect the failure mode that occurs when the opaque layer is broken through by detecting the plasma spectral component produced by the work piece material, along with the plasma produced by the opaque layer.
Description
- The invention relates generally to process monitoring during laser treatment of a metallic surface, and in particular to real-time monitoring of a laser shock peening process by analyzing laser plasma emissions.
- Laser shock peening (LSP), also referred to as laser shock processing, is an effective way of improving fatigue life of a metal work piece. Presently LSP finds wide application in the aerospace and automotive industries as a method for improving the fatigue properties of various metallic components, such as aluminum alloys, steel alloys, titanium based alloys, and nickel based alloys, among others.
- Generally, in LSP, a surface of the work piece is covered by an opaque layer and a transparent overlay. The opaque layer may include a black plastic tape or a black paint coated on the surface of the work piece. The transparent overlay generally comprises a layer of water disposed adjacent to the opaque layer. During the process, a high-power pulsed laser beam is focused onto the surface of the work piece. The laser pulse passes through the transparent overlay and is absorbed by the opaque layer, causing a rapid ablation of the opaque layer producing a plasma. The blow-off of the plasma from the surface of the work piece generates a high-amplitude pressure shock wave. The pressure shock wave travels in two directions: First, a compressive wave travels through the opaque layer into the work piece. Second, a shock wave is reflected from the tape and travels backward through the transparent layer. Due to shock impedance mismatch, this backward traveling wave is reflected by the transparent layer toward the work piece. The shock waves ultimately combine to impart plastic strain to the work piece. This results in the deformation of the work piece and imparts compressive residual stresses, which remain following processing. It is these compressive residual stresses in the work piece, which effectively reduce crack propagation rates in the work piece and, thus, improves fatigue properties of the work piece.
- If the pressure produced by the laser is insufficient, the desired changes in mechanical properties of the work piece will not be achieved. Therefore, it is desirable to have the capability of monitoring the pressure and shock wave strength during the LSP process. One approach known in the art involves using a quartz gauge for pressure measurements during laser shock processing. A quartz gauge is based on the piezoelectric behavior of quartz crystals. In this technique, a quartz crystal is disposed on one surface of the work piece to be processed. When a pressure shock wave is applied to a surface of the quartz crystal by a laser pulse, an electric current proportional to the stress difference between the affected surface and the opposite surface is produced by the quartz crystal. The current flows through a resistor and the voltage measured across the resistor is proportional to the pressure response. By analyzing the pressure response of the quartz crystal, it is possible to determine shock-wave pressure produced on the work piece during the actual process. However this approach is disadvantageous because it is indirect and is performed offline, i.e. not in real-time. Moreover, such an approach is expensive, as the quartz crystal needs to be replaced after every laser shot.
- Another technique to determine the quality of an LSP process includes performing accelerated fatigue test on a work piece after the work piece has been processed. However, since the LSP process and the work piece material are expensive, it is possible to sample only a limited number of parts for an accelerated fatigue test.
- There is, hence, a need for a system and method for monitoring a laser shock peening process, which is inexpensive and is operable substantially in real-time.
- In one aspect of the present technique, a method of monitoring a laser shock peening process is provided. In accordance with the method, a line spectrum is produced of radiation emitted from a plasma produced by a laser shock peening system. The line spectrum is converted into a signal representative of the line spectrum. The signal representative of the line spectrum is further converted into a graphical representation of the line spectrum, and a curve fit is performed for this graphical representation. A line broadening in the curve fit of the graphical representation of the line spectrum is then compared to a line broadening in the graphical representation of the line spectrum, to establish whether the line spectrum corresponds to a desired line spectrum.
- In another aspect, a method of monitoring laser shock peening process is provided. In accordance with the method, a line spectrum is produced of radiation emitted from a plasma produced by the laser shock peening process. At least one of wavelength or frequency of an emission peak in the line spectrum of radiation emitted from the plasma is then compared with at least one of wavelength or frequency of an emission peak in an expected line spectrum of radiation emitted from a material of the work piece, to verify that at least a portion of the laser induced plasma is produced from the work piece material.
- In yet another aspect, a laser shock peening system is provided. The system includes a pulsed laser, a spectrometer and a spectrum analyzer. The pulsed laser is operable to direct a pulsed laser beam toward an opaque layer disposed on a surface of a work piece. The spectrometer is operable to produce a line spectrum of radiation emitted by a plasma produced when the pulsed laser strikes the opaque layer. The spectrum analyzer is operable to compare line broadening of the line spectrum about an emission peak with line broadening about a peak in a defined line shape.
- These and other features, aspects, and advantages of the present invention will become better understood when the following detailed description is read with reference to the accompanying drawings in which like characters represent like parts throughout the drawings, wherein:
-
FIG. 1 is a schematic representation of a laser shock peening system according to aspects of the present technique; -
FIG. 2 is a graphical illustration of a representative line spectrum around a specific wavelength λ0 of plasma radiation produced in an LSP process. -
FIG. 3 is a comparative graphical illustration of a line spectrum around a specific wavelength λ0 for an LSP process having a transparent layer confinement over a work piece, and a Lorentzian curve fit of the same; -
FIG. 4 is a comparative graphical illustration of a line spectrum around a specific wavelength λ0 for an LSP process having a transparent layer confinement over a work piece, and a Gaussian curve fit of the same; -
FIG. 5 is a comparative graphical illustration of a line spectrum around a specific wavelength λ0 for an LSP process without a transparent layer confinement over a work piece, and a Lorentzian curve fit of the same; -
FIG. 6 is a comparative graphical illustration of a line spectrum for an LSP process without a transparent layer confinement over a work piece, and a Gaussian curve fit of the same; and -
FIG. 7 is a graphical illustration of a line spectrum of radiation produced by laser induced plasma, in case of a burn-through of the opaque layer. - As discussed in some detail hereinafter, the present technique provides a non-intrusive, real-time monitoring of a laser shock peening process, which is substantially free from environmental influences. The technique described is based on analysis of line broadening of plasma emission during an LSP process, so as to control the quality of every laser shot in real-time.
- Referring now to
FIG. 1 , a lasershock peening system 10 is illustrated. The illustrated lasershock peening system 10 comprises a lasershock peening unit 12 and amonitoring system 14. The lasershock peening unit 12 is controlled by aprocess control system 16 that is in communication with themonitoring system 14. Theprocess control system 16 is adapted to adjust process parameters of the lasershock peening unit 12 based upon a signal received from themonitoring system 14. - As illustrated in the figure, the laser
shock peening unit 12 comprises awork piece 18 held in position by aholder 20. Anopaque overlay 22 and atransparent overlay 24 are applied to one surface of thework piece 18. Theopaque overlay 22 may include, for example, a black tape or a black paint coated on one surface of thework piece 18. In this embodiment, thetransparent overlay 24 comprises a film of running water delivered, for example, by aflow circulating device 25, such as, a pump. Thetransparent overlay 24 is disposed adjacent to theopaque overlay 22. However, thetransparent overlay 24 may comprise another material, such as a transparent tape. The above-described arrangement may be oriented vertically, or at any desired angle with respect to the vertical. - During the process, a
pulsed laser beam 26 is directed from apulsed laser 28 onto thework piece 18. Thelaser 28 may comprise, for example, a pulsed Nd:YAG laser or a Nd:Glass laser. However, it is understood that other pulsed lasers may be used to perform laser shock peening. Alens 30 may be used to focus thelaser beam 26 onto thework piece 18. Thelaser beam 26 passes through thetransparent layer 24 and is absorbed by theopaque layer 22. The intensity of the focused laser beam causes theopaque layer 22 to vaporize, producing aplasma 32. The temperature at which theopaque layer 22 vaporizes may be on the order of 10,000 K. The plasma expansion is confined substantially by thetransparent overlay 24, resulting in a pressure pulse that is reflected from thetransparent layer 24 back towards thework piece 18. The pressure pulse caused by this reflected wave superimposes with a forward traveling shock wave produced by an initial ablation of theopaque layer 22 and causes thework piece 18 to deform, which imparts deep compressive stresses within thework piece 18. It has been observed that the magnitude of the pressure pulse is higher when the plasma expansion is confined by a transparent overlay, such as the water layer described above, than without a transparent overlay. - The
plasma 32 produced by the vaporization of theopaque layer 22 produces an emission oflight 34. According to the present technique, light from thesespectral emissions 34, also referred to as plasma emissions, is focused by alens 36 into an entrance slit of aspectrometer 38. Aspectrometer 38 is an instrument for measuring spectral intensity of light at a predefined wavelength range. Thespectral emissions 34 are dispersed into their constituent wavelengths by the spectrometer. An image of the spectrum of light produced in thespectrometer 38 is taken by acamera 40. Thecamera 40 may include a gated-intensified charge-coupled device (CCD), or a complimentary metal oxide semiconductor (CMOS) camera, amongst other image recording devices. The image from thecamera 40 is fed to aspectrum analyzer 42 for an analysis of the spectral emissions captured by the image. In one embodiment, thespectrum analyzer 42 is configured to generate a line spectrum of theplasma emission 34 based on light intensity data captured in the image taken by thecamera 40. Thespectrum analyzer 42 may include, for example, a processing unit, which implements an executable software code. Thespectrum analyzer 42 may include a monitor for visual display of results. In one embodiment, the spectrum analyzer is a computer with special data processing software which enables a computer to perform an analysis of the spectral emissions captured by the image from thecamera 40. -
FIG. 2 illustrates an example of a line spectrum, represented byreference numeral 44, of light received from a plasma produced by a laser shock peening process. Theline spectrum 44 has an emission peak 46 at a specific wavelength (λO). However, rather than simply being a straight line at the specific wavelength (λO), theline spectrum 44 has a general bell-shape. The bell-shape of theline spectrum 44 around the emission peak 46 is referred to as line broadening. There are several effects that cause the spectral line to broaden around the spectral peak in a plasma emission, such as: natural broadening, thermal broadening, collisional broadening, and Stark broadening. - Natural line broadening results from the fact that excited levels of atoms have certain mean lives, and these mean lives, by virtue of the Heisenberg's uncertainty principle, imply a spread in the energy values. The spread in energy values of the excited atoms causes light of different wavelengths to be emitted. Natural line broadening generally results in a spectral emission having a Lorentzian line shape. Since an LSP process generally produces line spectra that have lifetimes of hundreds of nanoseconds, natural line broadening is on the order of one megahertz. Hence, the effect of natural line broadening is generally insignificant in LSP processes. Thermal broadening is caused by the Doppler frequency shift of the moving particles at high temperatures, and produces a spectral emission having a Gaussian line shape. Collisional broadening of spectral emissions occurs due to the high pressure of ions and neutrals, and has a Lorentzian line shape. Stark broadening is caused by interaction among electrons or particles with a strong permanent electrical dipole moment and is indicative of the number density of electrons in an area. Stark broadening is also Lorentzian in line shape.
- The operating conditions of the laser shock peening process will determine which of these line broadening factors dominates the emission line produced by the
LSP system 10. For example, if theLSP system 10 is operating properly, thetransparent overlay 24 confines theplasma 32 and the resulting pressure is high in the confined volume. In such a case, the collisional broadening and the Stark broadening dominate the line broadening factors. As a result, the line emission has a substantially Lorentzian line shape. Conversely, if the system is not operating properly, such as in the event of a loss of water confinement over the work piece, the plasma at a high temperature is not confined. In such a case, the line broadening is influenced by both temperature and pressure, such that thermal broadening is a factor and the line broadening has a Voigt line shape, or a convolution between Gaussian and Lorentzian line shapes. - Hence, it is possible to determine if the system is operating properly by comparing the shape of the emission line produced by the
LSP system 10 with a Lorentzian curve fit of the emission line. In addition, as will be discussed below, the magnitude of the pressure pulse applied on the work piece may be determined by determining the closeness of the line broadening in the LSP process to a Lorentzian line shape. A Lorentzian line shape conforms to the following equation:
where: - a0 is amplitude of the peak at the wavelength λ0;
- a1 is the central wavelength λ0 of the peak; and
- a2 is the width of the spectral emission about wavelength λ0.
- A Gaussian line shape corresponds to the following equation:
where: - a0 is amplitude of the peak at the wavelength λ0;
- a1 is the central wavelength λ0 of the peak; and
- a2 is the width of the spectral emission about wavelength λ0.
- Referring generally to
FIGS. 3-6 , thespectrum analyzer 42 in the illustrated embodiment is adapted to determine the closeness of the line broadening during the LSP process to a Lorentzian line shape and a Gaussian line shape. Conformity of the emission spectrum with the Lorentzian line shape is indicative of proper operation of the LSP process, whereas a lack of conformity with the Lorentzian line shape and conformity with a Gaussian line shape are indicative of an improper operating condition in the LSP process. Thespectrum analyzer 42 is adapted to compute a parameter indicative of the closeness of the emission spectrum to a Lorentzian curve fit or a Gaussian curve fit of the emission spectrum and transmit the signal to theprocess control system 16. Such a parameter may include, for example a coefficient of multiple determination or R2 value. However, other statistical evaluations of the closeness of the fit of the curve to the emission spectrum may be used for comparison. In addition, the spectrum analyzer may compare the coefficient of multiple determination from the Lorentzian curve fit to the coefficient of multiple determination of the Gaussian curve fit. If the coefficient of multiple determination of the Lorentzian curve fit is greater than the coefficient of multiple determination of the Gaussian curve fit, then the line broadening is closer to Lorentzian than Gaussian. Theprocess control system 16 may stop operation of theLSP system 10 or alter the operation of one or more components of theLSP system 10 based on the analysis of the data. - Referring generally to
FIGS. 3 and 4 , an example of anemission spectrum 48 produced by an LSP system that is operating correctly is illustrated. Theemission spectrum 48 has a peak 50 at a wavelength (λO).FIG. 3 illustrates a Lorentzian curve fit 52 of theemission line 48 andFIG. 4 illustrates a Gaussian curve fit 54 of theemission line 48. In this embodiment, the intensity of thelaser beam 26 and the confinement of the layer ofwater 24 is sufficient to produce aplasma 32 having a sufficient pressure to enable the collisional broadening and the Stark broadening to dominate the line broadening factors. As a result, theLorentzian curve 52 illustrated inFIG. 3 exhibits a reasonably high degree of conformity with theemission spectrum 48. Conversely, theemission spectrum 48 does not exhibit a high degree of conformity with the Gaussian curve fit 54 ofFIG. 4 . Because theemission spectrum 48 exhibits a high degree of conformity with the Lorentzian curve fit 52 and not theGaussian curve fit 54, theemission spectrum 48 evidences that theLSP system 10 is operating properly, e.g., with the proper water confinement of the plasma. - Referring generally to
FIGS. 5 and 6 , an example of anemission spectrum 56 produced by an LSP system that does not have proper water confinement is illustrated. Theemission spectrum 56 has a peak 58 at a wavelength (λO).FIG. 5 illustrates a Lorentzian curve fit 60 of theemission line 48 andFIG. 6 illustrates a Gaussian curve fit 62 of theemission line 48. In this embodiment, the intensity of thelaser beam 26 or the confinement of the layer ofwater 24 does not enable theplasma 32 to achieve a sufficient pressure to enable collisional broadening and the Stark broadening to dominate the line broadening factors. Instead, thermal broadening also influences the line broadening factors. As a result, theLorentzian curve 60 illustrated inFIG. 5 does not exhibit a reasonably high degree of conformity with theemission spectrum 56. Conversely, theemission spectrum 56 does exhibit some degree of conformity with the Gaussian curve fit 54 ofFIG. 6 . Because theemission spectrum 48 does not exhibit a high degree of conformity with the Lorentzian curve fit 52 and does exhibit conformity with theGaussian curve fit 54, theemission spectrum 48 evidences that theLSP system 10 is not operating properly, e.g., the LSP system does not have proper water confinement of the plasma. - Depending on the degree of closeness or conformity of the spectral line broadening with the Lorentzian line shape, the
process control system 16 may stop operation of theLSP system 10, generate an alarm, or modify the operation of one or more components of theLSP system 10. For example, thecontrol system 16 may be operable to increase or decrease the laser energy, laser beam diameter at the work piece, the rise time, the pulse width of thelaser beam 26, or the thickness of thetransparent layer 24 to provide the desired degree of conformity with the Lorentzian line shape. - Referring generally to
FIGS. 7-9 , the present technique can also be used to detect a failure of the LSP process. In particular, the present technique can be used to detect a burn-through of the opaque layer. In such a case, theopaque layer 22 is vaporized to an extent such that portion of thelaser beam 26 is incident directly on thework piece 18, resulting in plasma emission also from the work piece material. As an example,FIG. 7 shows aline spectrum 64 of plasma spectral emission solely from the opaque layer, which has spectral peak atwavelength λ 0 66, but no spectral peak at wavelength λB.FIG. 8 shows aline spectrum 68 of plasma spectral emission solely from the material of work piece, which has acharacteristic peak 70 at wavelength λB.FIG. 9 illustrates aline spectrum 72 produced by a burn-through of the opaque layer. As illustrated, theline spectrum 72 for the burn-through case comprises significant spectrumspectral peaks 76 and 78, which occur respectively at wavelength λB, which is a characteristic of work piece material, and at wavelength λ0, which is a characteristic of the opaque material. A burn-through condition can thus be detected by the presence of anemission peak 76 at a wavelength λB characteristic of the work piece material, along with theemission peak 74 of the opaque layer, which occurs at wavelength λO. On detection of a burn-through, thecontrol system 16 may shut down thesystem 10 to enable the problem causing the burn-through to be corrected or may alter the operation of the LSP system to correct this condition. - As can be appreciated, the present technique can be used to analyze every laser shot on the work piece directly and in real time. Therefore, the quality of every laser shot can be guaranteed. Further, the technique described is non-intrusive, as it involves analysis of the laser induced plasma emission, which is a by-product of the LSP process. Moreover, since the method uses line broadening of the plasma emission around an emission peak, and not the absolute signal intensity at an exact wavelength, it is substantially free from environmental influences such as, for example, fluctuations in room light or laser flashlamps, spectrometer absolute wavelength variation, or misalignment of the monitoring system due to system vibration or other causes, amongst others.
- While only certain features of the invention have been illustrated and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Claims (21)
1-26. (canceled)
27. A laser shock peening system, comprising:
a pulsed laser operable to direct a pulsed laser beam toward an opaque layer disposed on a surface of a work piece;
a spectrometer operable to produce a line spectrum of radiation emitted by a plasma produced by the pulsed laser during a shock peening process;
a spectrum analyzer operable to compare line broadening of the line spectrum about an emission peak with line broadening about a peak in a defined line shape; and
a process control system configured to control, based upon the comparison, the laser shock peening system to alter at least one of laser energy, laser beam diameter at a work piece, rise time, or pulse width of a laser beam produced by the laser to produce a plasma.
28. The system as recited in claim 27 , wherein the defined line shape comprises a curve fit of the line spectrum of radiation emitted by a plasma produced by the pulsed laser.
29. The system as recited in claim 28 , wherein the spectrum analyzer is operable to produce the curve fit of the line spectrum of radiation emitted by a plasma produced by the pulsed laser.
30. The system as recited in claim 29 , wherein the spectrum analyzer is operable to produce a graphical representation of the line spectrum and the curve fit of the line spectrum.
31. The system as recited in claim 30 , wherein the curve fit is a Lorentzian curve fit.
32. The system as recited in claim 30 , wherein the curve fit is a Gaussian curve fit.
33. The system as recited in claim 29 , wherein the sprectrum analyzer is operable to utilize a regression technique to relate the line spectrum to the curve fit of the line spectrum in a mathematical form.
34. The system as recited in claim 33 , wherein the process control system is operable to adjust or stop operation of the laser shock peening system when the spectrum analyzer establishes that line broadening of the line spectrum about an emission peak differs by a defined amount from line broadening about the peak in the defined line shape.
35. The system as recited in claim 27 , further comprising:
a camera operable to convert the spectrum produced by the spectrometer to a signal representative of the spectrum, wherein the signal representative of the spectrum is coupled to the spectrum analyzer.
36. The system as recited in claim 27 , comprising a system for providing or adjusting a layer of water over the opaque layer disposed on the surface of the work piece.
37. The method as recited in claim 27 , wherein the spectrum analyzer is operable to produce a Lorentzian and a Gaussian curve fit of the line spectrum of radiation emitted by a plasma produced by the pulsed laser and to compare the Lorentzian and Gaussian curve fits.
38. The method as recited in claim 37 , wherein the spectrum analyzer is operable to establish a coefficient of multiple determination of the Lorentzian curve fit and the Gaussian curve fit.
39. The method as recited in claim 38 , wherein the spectrum analyzer is operable to alter a laser peening system operating parameter when the coefficient of multiple determination of the Lorentzian curve fit does not exceed the coefficient of multiple determination of the Gaussian curve fit by a desired amount.
40. A laser shock peening process monitoring system, comprising:
means for imaging radiation emitted by laser induced plasma produced by the laser shock peening process
means for producing a line spectrum around an emission peak of the radiation emitted by the laser induced plasma, and
means for verifying proper operation of the laser peening process based on broadening of the line spectrum about the emission peak of the radiation emitted by the laser induced plasma.
41. A laser shock peening system, comprising:
a pulsed laser operable to direct a pulsed laser beam toward an opaque layer disposed on a surface of a work piece;
a spectrometer operable to produce a line spectrum of radiation emitted by a plasma produced by the pulsed laser;
a spectrum analyzer operable to compare line broadening of the line spectrum about an emission peak with line broadening about a peak in a defined line shape; and
a process control system configured to control, based upon the comparison, the laser shock peening system to alter a parameter of the laser to produce a plasma.
42. The system as recited in claim 41 , wherein the process control system alters laser energy based upon the comparison.
43. The system as recited in claim 41 , wherein the process control system alters laser beam diameter at a work piece based upon the comparison.
44. The system as recited in claim 41 , wherein the process control system alters rise time based upon the comparison.
45. The system as recited in claim 41 , wherein the process control system alters pulse width of a laser beam produced by the laser based upon the comparison.
46. The system as recited in claim 41 , wherein the defined line shape comprises a curve fit of the line spectrum of radiation emitted by a plasma produced by the pulsed laser.
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Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551053A (en) * | 1968-10-14 | 1970-12-29 | Trw Inc | Laser photolysis and spectroscopy system |
US4410992A (en) * | 1980-03-26 | 1983-10-18 | Laser Science, Inc. | Generation of pulsed laser radiation at a finely controlled frequency by transient regerative amplification |
US4456812A (en) * | 1982-07-30 | 1984-06-26 | Armco Inc. | Laser treatment of electrical steel |
US4824249A (en) * | 1986-04-16 | 1989-04-25 | Chamber Ridge Pty. Ltd. | Systems for the direct analysis of solid samples by atomic emission spectroscopy |
US5275594A (en) * | 1990-11-09 | 1994-01-04 | C. R. Bard, Inc. | Angioplasty system having means for identification of atherosclerotic plaque |
US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
US5472883A (en) * | 1992-02-05 | 1995-12-05 | Yamasa Corporation | Solid phase reagent and assay method for measuring antibodies specific to antiphospholipid syndrome |
US5796983A (en) * | 1995-08-14 | 1998-08-18 | J. A. Woollam Co. Inc. | Dielectric function parametric model, and method of use |
US5828724A (en) * | 1997-03-25 | 1998-10-27 | Advanced Technology Materials, Inc. | Photo-sensor fiber-optic stress analysis system |
US5847825A (en) * | 1996-09-25 | 1998-12-08 | Board Of Regents University Of Nebraska Lincoln | Apparatus and method for detection and concentration measurement of trace metals using laser induced breakdown spectroscopy |
US5862060A (en) * | 1996-11-22 | 1999-01-19 | Uop Llc | Maintenance of process control by statistical analysis of product optical spectrum |
US5864114A (en) * | 1994-03-10 | 1999-01-26 | Toshiharu Ishikawa | Coating removal apparatus using coordinate-controlled laser beam |
US5951891A (en) * | 1997-03-24 | 1999-09-14 | International Business Machines Corporation | Optical apparatus for monitoring profiles of textured spots during a disk texturing process |
US5980101A (en) * | 1997-10-31 | 1999-11-09 | General Electric Company | Method and apparatus for measuring laser pulse energy |
US6075593A (en) * | 1999-08-03 | 2000-06-13 | General Electric Company | Method for monitoring and controlling laser shock peening using temporal light spectrum analysis |
US6191385B1 (en) * | 1999-07-07 | 2001-02-20 | Lsp Technologies, Inc. | Smart controller for laser peening |
US6254703B1 (en) * | 1999-02-19 | 2001-07-03 | Lsp Technologies, Inc. | Quality control plasma monitor for laser shock processing |
US6312422B1 (en) * | 1998-03-30 | 2001-11-06 | Carl Zeiss Jena Gmbh | Process and arrangement for monitoring and controlling the treatment parameters in an ophthalmic treatment device |
US6498829B1 (en) * | 2001-06-28 | 2002-12-24 | The University Of Toledo | Method for measurement of physical characteristics of crystals |
US6509070B1 (en) * | 2000-09-22 | 2003-01-21 | The United States Of America As Represented By The Secretary Of The Air Force | Laser ablation, low temperature-fabricated yttria-stabilized zirconia oriented films |
US6629464B2 (en) * | 2001-10-03 | 2003-10-07 | Ui Won Suh | Laser shock peening quality assurance by acoustic analysis |
US6666857B2 (en) * | 2002-01-29 | 2003-12-23 | Robert F. Smith | Integrated wavefront-directed topography-controlled photoablation |
US6673200B1 (en) * | 2002-05-30 | 2004-01-06 | Lsi Logic Corporation | Method of reducing process plasma damage using optical spectroscopy |
US20040160605A1 (en) * | 2003-02-19 | 2004-08-19 | Chuji Wang | Method and apparatus for elemental and isotope measurements and diagnostics-microwave induced plasma-cavity ring-down spectroscopy |
US6799644B2 (en) * | 2002-05-03 | 2004-10-05 | Hilti Aktiengesellschaft | Pneumatic percussive mechanism |
US6914215B2 (en) * | 2003-06-27 | 2005-07-05 | General Electric Company | Real time laser shock peening quality assurance by natural frequency analysis |
US6961599B2 (en) * | 2001-01-09 | 2005-11-01 | Childrens Hospital Los Angeles | Identifying or measuring selected substances or toxins in a subject using resonant raman signals |
US20050274702A1 (en) * | 2004-06-15 | 2005-12-15 | Laserfacturing Inc. | Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser |
US20060085141A1 (en) * | 2004-07-23 | 2006-04-20 | Baylor University | Method and machine for identifying a chemical compound |
US7113666B2 (en) * | 2004-06-03 | 2006-09-26 | Sunrise Telecom Incorporated | Method and apparatus for spectrum deconvolution and reshaping |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63280483A (en) * | 1987-05-13 | 1988-11-17 | Canon Inc | Light source for exposure device |
US6002113A (en) * | 1998-05-18 | 1999-12-14 | Lucent Technologies Inc. | Apparatus for processing silicon devices with improved temperature control |
US6271917B1 (en) * | 1998-06-26 | 2001-08-07 | Thomas W. Hagler | Method and apparatus for spectrum analysis and encoder |
US6512584B1 (en) * | 1998-06-29 | 2003-01-28 | Lsp Technologies, Inc. | Quality control for laser peening |
US6765172B1 (en) * | 2002-12-02 | 2004-07-20 | Wavesplitter Technologies, Inc. | Laser fusion based WDM coupler |
US7273998B2 (en) * | 2004-09-15 | 2007-09-25 | General Electric Company | System and method for monitoring laser shock processing |
-
2004
- 2004-09-15 US US10/941,560 patent/US7273998B2/en not_active Expired - Fee Related
-
2005
- 2005-09-08 EP EP05255498A patent/EP1637616B1/en not_active Not-in-force
- 2005-09-14 JP JP2005266309A patent/JP5054297B2/en not_active Expired - Fee Related
- 2005-09-15 CN CNB2005101041480A patent/CN100478456C/en not_active Expired - Fee Related
-
2007
- 2007-09-04 US US11/849,815 patent/US20070296968A1/en not_active Abandoned
Patent Citations (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551053A (en) * | 1968-10-14 | 1970-12-29 | Trw Inc | Laser photolysis and spectroscopy system |
US4410992A (en) * | 1980-03-26 | 1983-10-18 | Laser Science, Inc. | Generation of pulsed laser radiation at a finely controlled frequency by transient regerative amplification |
US4456812A (en) * | 1982-07-30 | 1984-06-26 | Armco Inc. | Laser treatment of electrical steel |
US4824249A (en) * | 1986-04-16 | 1989-04-25 | Chamber Ridge Pty. Ltd. | Systems for the direct analysis of solid samples by atomic emission spectroscopy |
US5275594A (en) * | 1990-11-09 | 1994-01-04 | C. R. Bard, Inc. | Angioplasty system having means for identification of atherosclerotic plaque |
US5472883A (en) * | 1992-02-05 | 1995-12-05 | Yamasa Corporation | Solid phase reagent and assay method for measuring antibodies specific to antiphospholipid syndrome |
US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
US5864114A (en) * | 1994-03-10 | 1999-01-26 | Toshiharu Ishikawa | Coating removal apparatus using coordinate-controlled laser beam |
US5796983A (en) * | 1995-08-14 | 1998-08-18 | J. A. Woollam Co. Inc. | Dielectric function parametric model, and method of use |
US5847825A (en) * | 1996-09-25 | 1998-12-08 | Board Of Regents University Of Nebraska Lincoln | Apparatus and method for detection and concentration measurement of trace metals using laser induced breakdown spectroscopy |
US5862060A (en) * | 1996-11-22 | 1999-01-19 | Uop Llc | Maintenance of process control by statistical analysis of product optical spectrum |
US5951891A (en) * | 1997-03-24 | 1999-09-14 | International Business Machines Corporation | Optical apparatus for monitoring profiles of textured spots during a disk texturing process |
US5828724A (en) * | 1997-03-25 | 1998-10-27 | Advanced Technology Materials, Inc. | Photo-sensor fiber-optic stress analysis system |
US5980101A (en) * | 1997-10-31 | 1999-11-09 | General Electric Company | Method and apparatus for measuring laser pulse energy |
US6312422B1 (en) * | 1998-03-30 | 2001-11-06 | Carl Zeiss Jena Gmbh | Process and arrangement for monitoring and controlling the treatment parameters in an ophthalmic treatment device |
US6554921B2 (en) * | 1999-02-19 | 2003-04-29 | Lsp Technologies, Inc. | Quality control plasma monitor for laser shock processing |
US6254703B1 (en) * | 1999-02-19 | 2001-07-03 | Lsp Technologies, Inc. | Quality control plasma monitor for laser shock processing |
US6191385B1 (en) * | 1999-07-07 | 2001-02-20 | Lsp Technologies, Inc. | Smart controller for laser peening |
US6075593A (en) * | 1999-08-03 | 2000-06-13 | General Electric Company | Method for monitoring and controlling laser shock peening using temporal light spectrum analysis |
US6509070B1 (en) * | 2000-09-22 | 2003-01-21 | The United States Of America As Represented By The Secretary Of The Air Force | Laser ablation, low temperature-fabricated yttria-stabilized zirconia oriented films |
US6961599B2 (en) * | 2001-01-09 | 2005-11-01 | Childrens Hospital Los Angeles | Identifying or measuring selected substances or toxins in a subject using resonant raman signals |
US6498829B1 (en) * | 2001-06-28 | 2002-12-24 | The University Of Toledo | Method for measurement of physical characteristics of crystals |
US6629464B2 (en) * | 2001-10-03 | 2003-10-07 | Ui Won Suh | Laser shock peening quality assurance by acoustic analysis |
US6666857B2 (en) * | 2002-01-29 | 2003-12-23 | Robert F. Smith | Integrated wavefront-directed topography-controlled photoablation |
US6799644B2 (en) * | 2002-05-03 | 2004-10-05 | Hilti Aktiengesellschaft | Pneumatic percussive mechanism |
US6673200B1 (en) * | 2002-05-30 | 2004-01-06 | Lsi Logic Corporation | Method of reducing process plasma damage using optical spectroscopy |
US20040160605A1 (en) * | 2003-02-19 | 2004-08-19 | Chuji Wang | Method and apparatus for elemental and isotope measurements and diagnostics-microwave induced plasma-cavity ring-down spectroscopy |
US6914215B2 (en) * | 2003-06-27 | 2005-07-05 | General Electric Company | Real time laser shock peening quality assurance by natural frequency analysis |
US7113666B2 (en) * | 2004-06-03 | 2006-09-26 | Sunrise Telecom Incorporated | Method and apparatus for spectrum deconvolution and reshaping |
US20050274702A1 (en) * | 2004-06-15 | 2005-12-15 | Laserfacturing Inc. | Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser |
US20060085141A1 (en) * | 2004-07-23 | 2006-04-20 | Baylor University | Method and machine for identifying a chemical compound |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110017715A1 (en) * | 2009-04-17 | 2011-01-27 | University Of Connecticut | Systems and Methods For Enhanced Control of Laser Drilling Processes |
US8440933B2 (en) | 2009-04-17 | 2013-05-14 | University Of Connecticut | Systems and methods for enhanced control of laser drilling processes |
US20110278271A1 (en) * | 2010-05-12 | 2011-11-17 | General Electric Company | System and method for laser shock peening |
JP2011241478A (en) * | 2010-05-12 | 2011-12-01 | General Electric Co <Ge> | System and method for laser shock peening |
US8222567B2 (en) * | 2010-05-12 | 2012-07-17 | General Electric Company | System and method for laser shock peening |
US20130153552A1 (en) * | 2011-12-14 | 2013-06-20 | Gwangju Institute Of Science And Technology | Scribing apparatus and method for having analysis function of material distribution |
Also Published As
Publication number | Publication date |
---|---|
CN1754967A (en) | 2006-04-05 |
EP1637616B1 (en) | 2012-08-15 |
JP2006082222A (en) | 2006-03-30 |
US20060054607A1 (en) | 2006-03-16 |
CN100478456C (en) | 2009-04-15 |
JP5054297B2 (en) | 2012-10-24 |
US7273998B2 (en) | 2007-09-25 |
EP1637616A3 (en) | 2009-03-11 |
EP1637616A2 (en) | 2006-03-22 |
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