US20070241359A1 - LED package and method for producing the same - Google Patents
LED package and method for producing the same Download PDFInfo
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- US20070241359A1 US20070241359A1 US11/808,598 US80859807A US2007241359A1 US 20070241359 A1 US20070241359 A1 US 20070241359A1 US 80859807 A US80859807 A US 80859807A US 2007241359 A1 US2007241359 A1 US 2007241359A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- the present invention relates to an LED package and method for producing the same, and particularly relates to a package and a method for a semiconductor wafer with high illumination and high mass production.
- FIG. 26 a perspective view of a conventional LED package including a LED die 90 is illustrated.
- the LED die 90 has a conductive region-forming surface 900 that is also a main light emission surface, and two conductive regions 901 disposed on the conductive region-forming surface 900 .
- the LED die 90 has an opposed surface opposite to the conductive region-forming surface 900 .
- the LED die 90 is connected to a die-installation surface 910 of a substrate 91 via the opposed surface thereof.
- the conventional LED package further includes two connection members 92 corresponding to the two conductive regions 901 , respectively. Each connection member 92 extends from the die-installation surface 910 to a predetermined portion of a backside surface opposite the die-installation surface 910 .
- the predetermined portion of the die-installation surface 910 is used to connect electrically an exterior component (not shown).
- Each conductive region 901 of the LED die 90 is electrically connected to the corresponding connection member 92 via a bonding wire 93 .
- a protection layer is further provided to cover the LED die 90 and the bonding wire 93 on the die-installation surface 910 of the substrate 91 .
- the protection layer 94 is made of transparent resin materials.
- a wafer (not shown) is diced into plural dies 90 , and the dies 90 are disposed on respective substrates 91 in turn.
- the bonding wire 93 is applied for electrical connection.
- the protection layer 94 is formed, the conventional LED package is finished. Therefore, the period of manufacturing the same is too long to fabricate by mass production.
- An LED package and method for producing the same are disclosed for high mass production and high illumination.
- An LED package includes an LED die, an insulation layer and a conductive member.
- the LED die has a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface.
- the insulation layer is formed on the conductive region-forming surface of the LED die, and has a plurality of openings corresponding to the conductive regions, respectively.
- the conductive member fills one of the openings, and electrically connects one respective pad to an exterior circuit.
- An LED package includes an LED die, a first insulation layer, a metallic reflection layer, a second insulation later, and a conductive member.
- the LED die has a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface.
- the first insulation layer is formed on the conductive region-forming surface of the LED die, and has a plurality of channels corresponding to the conductive regions, respectively.
- the metallic reflection layer is formed on the first insulation layer, and has a plurality of through holes corresponding to the channels, respectively.
- the second insulation later is formed on the metallic reflection layer, and has a plurality of openings corresponding to the conductive regions via the channels and the through holes, respectively.
- the conductive member fills one of the openings, and electrically connects one of the conductive regions to an exterior circuit.
- An LED package includes an LED die, a reflection layer, a substrate, a binding wire and a protection layer.
- the LED die has a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface.
- the reflection layer is formed on an opposed surface of the LED die, opposite the conductive region-forming surface.
- the substrate has a die-installation surface on which the LED die is disposed via the reflection layer.
- the substrate includes a plurality of connection members in accordance with the conductive regions for electrical connection, respectively, and each connection member extends from the die-installation surface to a predetermined portion of a back surface of the substrate, opposite the die-installation surface, for electrically connecting to an exterior circuit.
- the binding wire connects one of the conductive regions and a corresponding connection member.
- the protection layer covers the substrate for enclosing the LED die and the binding wire.
- a method for producing an LED package includes the following steps.
- An exterior conductive body is arranged on the conductive member, and the LED wafer is diced into a plurality of LED packages.
- a method for producing an LED package includes the following steps.
- An LED wafer is provided, which includes a plurality of LED sections. Each LED section includes a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface.
- a first insulation layer is formed on the conductive region-forming surface of each LED section.
- a metallic reflection layer is made on the first insulation layer, and patterned with a plurality of through holes to expose the first insulation layer.
- the first insulation layer is patterned with a plurality of channels that communicate with the through holes, respectively, so as to expose the corresponding conductive regions.
- a second insulation layer is formed on the metallic reflection layer, and patterned with a plurality of openings in accordance with the through holes and the channels, so as to expose the corresponding conductive regions.
- a conductive formation layer is disposed on the second insulation layer, an exposed portion thereof that is higher than the second insulation layer is exposed, and a conductive member is left inside each opening for electrically connecting the corresponding pad.
- An exterior conductive body, electrically connected to an exterior circuit and to each pad, is provided, and the LED wafer is diced into a plurality of LED packages.
- a method for producing an LED package includes the following steps.
- (c) A substrate is provided. The substrate has a die-installation surface to which the LED die is connected via the reflection layer.
- the substrate includes two connection members in accordance with the conductive regions for electrical connection, respectively, and each connection member extends from the die-installation surface to a predetermined portion of a back surface of the substrate, opposite the die-installation surface, for electrically connecting an exterior circuit.
- (d) A protection layer covers the substrate for enclosing the LED die and the binding wire.
- a method for producing an LED package includes the following steps.
- An LED wafer is provided, which includes a plurality of LED sections. Each LED section includes a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface.
- a first insulation layer is installed on the conductive region-forming surface of each LED section.
- a metallic reflection layer is formed on the first insulation layer.
- a second insulation layer is formed on the metallic reflection layer, and the second insulation layer is patterned with a plurality of openings so as to expose the metallic reflection layer.
- the metallic reflection layer is patterned with a plurality of through holes in order to expose the first insulation layer.
- the first insulation layer is patterned with a plurality of channels that communicate with the through holes, respectively, so as to communicate with the through holes.
- a third insulation layer is formed on the second insulation layer besides the openings, and the third insulation layer is patterned with a plurality of penetrating holes in accordance with the openings, the through holes and the channels, in order to expose the corresponding conductive regions, respectively.
- a conductive formation layer is disposed on the third insulation layer, an exposed portion thereof that is higher than the third insulation layer is removed, and a conductive member is left inside each penetrating hole for electrically connected the corresponding conductive region.
- An exterior conductive body, electrically connected to an exterior circuit and to each conductive region, is provided, and the LED wafer is diced into a plurality of LED packages.
- FIGS. 1 to 4 are cross-sectional profiles of a first embodiment of an LED package according to the present invention.
- FIGS. 5 to 8 are cross-sectional profiles of a second embodiment of the LED package according to the present invention.
- FIGS. 9 to 14 are cross-sectional profiles of a third embodiment of the LED package according to the present invention.
- FIGS. 15 and 16 are cross-sectional profiles of a fourth embodiment the an LED package according to the present invention.
- FIGS. 17 to 21 are cross-sectional profiles of a fifth embodiment of the LED package according to the present invention.
- FIGS. 22 and 23 are cross-sectional profiles of a sixth embodiment of the LED package according to the present invention.
- FIG. 24 is a side view of a reflection layer of a conventional LED package
- FIG. 25 is a side view of a reflection layer of another conventional LED package.
- FIG. 26 is a cross-sectional profile of the conventional LED package.
- FIGS. 1 to 4 A first embodiment of an LED package of the present invention is illustrated in FIGS. 1 to 4 .
- An LED wafer, partially shown in FIG. 1 is provided first.
- the LED wafer 1 includes a plurality of LED sections 10 , and only one LED section 10 is shown.
- Each LED section 10 includes an LED die, and for ease of explanation, only one LED section 10 will be given as an example.
- Each LED section 10 includes a conductive region-forming surface 100 and at least two conductive regions 101 disposed on the conductive region-forming surface 100 .
- Each conductive region 101 has disposed thereon a metallurgic layer (not shown) as a UBM (Under Bump metallurgy) in a proper manner.
- UBM Under Bump metallurgy
- a main light-emission surface on each LED section 10 is opposite the conductive region-forming surface 100 .
- a photosensitive insulation layer 20 which is composed of polyimide materials or the like, is formed on the conductive region-forming surface 100 .
- the insulation layer 20 is patterned with a plurality of openings 200 corresponding to the conductive regions, respectively..
- a conductive formation layer 30 is formed on a whole surface of the insulation layer 20 and reveals portions of the conductive region-forming surface 100 via the openings 200 by means of, for example, printing.
- the conductive formation layer 30 includes, for example, conductive adhesives or the like. Furthermore, the conductive formation layer 30 is ground so as to remove part of the conductive formation layer formed on the insulation layer 20 , thereby leaving remaining of the conductive formation layer inside the openings 200 serve as conductive members 40 that connect corresponding conductive regions 101 .
- each conductive member 40 is disposed with a metallic layer 401 by any proper manner in FIG. 4 .
- Each metallic layer 40 includes a nickel layer and a gold layer, or may be formed from other appropriate metallic materials.
- an exterior conductive body 50 used for electrically connecting an exterior circuit (not shown). Then, the LED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages.
- a sheet of the LED wafer 1 is processed. That means a plurality of LED sections 10 are processed simultaneously and the manufacturing quantity is improved.
- the conductive members 40 are formed by reflective and conductive material, so that they can be treated as reflection layers. Therefore, as shown in FIG. 4 , the light toward the conductive members 40 , as indicated by solid arrows, will be reflected and emitted through the main light-emission surface, as indicated by the dotted arrows. Thus, the illumination provided by the LED package will be improved as compared with the prior art.
- FIGS. 5 to 8 A second embodiment of the LED package of the present invention is illustrated in FIGS. 5 to 8 .
- An LED wafer, partially shown in FIG. 5 is similar to that shown in FIG. 1 .
- a conductive formation layer 30 is formed on the whole surface of the insulation layer 20 and the revealed portions of the conductive region-forming surface 100 via the openings 200 by means of, for example, sputtering.
- the conductive formation layer 30 can be made of appropriate materials by any other proper manners.
- the conductive formation layer 30 is ground so as to remove part of the conductive formation layer 30 formed on the insulation layer 20 , thereby leaving remaining of the conductive formation layer 30 inside the openings 200 to serve as conductive members 40 that connect corresponding conductive regions 101 (in FIG. 6 ).
- an auxiliary layer 64 is formed on the whole surface of the insulation layer 20 .
- the auxiliary layer 64 is further patterned so as to form a plurality of passageways 640 that communicate with corresponding openings 200 .
- Each passageway 640 and the corresponding one of the openings 200 together form a conductive-body formation hole.
- an exterior conductive body 50 is disposed in order to connect electrically the corresponding conductive member 40 .
- the exterior conductive body 50 has an exposed portion exposed by the conductive-body formation hole.
- the exterior conductive body 50 can be a solder bump.
- the exposed portion of the exterior conductive body 50 can be ground flat and the auxiliary layer 64 is then removed.
- the LED wafer 1 can be diced along a dicing line (not shown) into a plurality of LED packages.
- FIGS. 9 to 14 A third embodiment of the LED package of the present invention is illustrated in FIGS. 9 to 14 .
- An LED wafer is provided in FIGS. 9 and 10 , and is similar to that shown in FIG. 1 .
- a photosensitive and transparent first insulation layer 60 which is composed of polyimide materials or the like, is formed on the conductive region-forming surface 100 .
- a metallic reflection layer 61 is disposed on the first insulation layer 60 .
- the metallic reflection layer 61 is a metallic thin film of high reflectivity.
- the metallic reflection layer 61 can be formed by coating metal material or by adhering a metal thin film on the first insulation layer 60 .
- the metallic refection layer 61 can be formed with a plurality of through holes 610 corresponding to the conductive regions 101 by appropriate chemical processes.
- the metallic reflection layer 61 is formed by adhering a metal thin film on the first insulation layer 60 the through holes 610 are formed in the metal thin film before adhered on the first insulation layer 60 , and thus, the chemical processes can be omitted.
- the metallic reflection layer 61 is formed by adhering a metal thin film on the first insulation layer 60 .
- the first insulation layer 60 can be patterned to form a plurality of channels 600 each registered with a corresponding one of the through holes 610 by using the metallic reflection layer 61 as a mask.
- a second insulation layer 62 is formed on a whole surface of the metallic reflection layer 61 and is patterned to forma plurality of openings 620 each extending through a corresponding through hole 610 and a corresponding channel 600 registered with the corresponding through hole 610 and reaching a corresponding conductive region 101 , such that the opening-confining wall of each of the opening 620 is transverse to a plane of the layer 61 to isolate the layer 61 from the corresponding conductive region 101 while permitting access to the corresponding conductive region 101 .
- a conductive formation layer 70 can be formed on a whole surface of the second insulation layer 62 and the revealed portions of the conductive region-forming surface 100 via the openings 620 (in FIG. 13 ).
- the conductive formation layer 70 can be ground so as to remove part of the conductive formation layer 70 formed on the insulation layer 20 , thereby leaving remaining of the conductive formation layer 70 inside the openings 600 to serve as conductive members 700 that connect corresponding conductive regions 101
- each of the conductive members 700 is sequentially disposed a metallic layer 701 and an exterior conductive body 50 .
- the LED wafer 1 can be diced along a dicing line (not shown) into a plurality of LED packages.
- FIGS. 15 and 16 show the method for the LED package according to a fourth embodiment of the present invention. Unlike the third embodiment, after the opening 620 is formed, a conductive formation layer 30 is formed on the whole surface of the second insulation layer 62 and the revealed portions of the conductive region-forming surface 100 by means of, for example, sputtering (in FIG. 15 ).
- the conductive formation layer 30 is ground so as to remove part of the conductive formation layer 30 formed on the second insulation layer 62 , thereby leaving remaining of the conductive formation layer 30 inside the openings 620 to serve as conductive members 40 that connect corresponding conductive regions 101
- the exterior conductive body 50 can be formed in steps similar to those of the second embodiment. Finally, the LED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages.
- FIGS. 17 to 21 show the method for the LED package according to a fifth embodiment. As shown in FIG. 17 , an LED wafer 1 similar to that of the third embodiment is provided.
- a photosensitive and transparent first insulation layer 60 , a metallic reflection layer 61 formed from a metallic thin film having high reflectivity, and a photosensitive second insulation layer 62 are sequentially formed on the conductive region-forming surface 100 .
- the second insulation layer 62 is patterned to form a plurality of openings 620 for exposing portions of the metallic reflection layer 61 registered with the corresponding conductive regions 101 .
- the metallic reflection layer 61 is processed to form a plurality of through holes 610 each registered with a corresponding one of the openings 620 .
- the first insulation layer 60 is patterned to forma plurality of channels 600 each registered with a corresponding one of the openings 620 and exposing a corresponding one of the conductive regions while using the second insulation layer 62 and the metallic reflection layer 61 as masks.
- a third insulation layer 63 is formed on a whole surface of the second insulation layer 62 and the revealed portion of the conductive region-forming surface via the openings 620 .
- the third insulation layer 62 is patterned to form a plurality of penetrating holes 630 each extending through a corresponding opening 620 , a corresponding through hole 610 and a corresponding channel 600 registered with the corresponding through hole 610 and reaching a corresponding conductive region 101 , such that the opening-confining wall of each of the penetrating holes 630 is transverse to a plane of the layer 61 to isolate the layer 61 from the corresponding conductive region 101 while permitting access to the corresponding conductive region 101
- the second and third insulation layer 620 and 630 cooperatively serving as the second insulation layer 620 in the third and fourth embodiments.
- a conductive formation layer 70 is formed on a whole surface of the third insulation layer 63 and revealed portions of the conductive region-forming surface 100 , as shown in FIG. 20 .
- the conductive formation layer 70 is ground so as to remove part of the conductive formation layer 70 formed on the third insulation layer 63 , thereby leaving remaining of the conductive formation layer 70 inside the conductive-body formation holes each formed from one through hole 610 , one channel 600 , one opening 620 and one penetrating hole 630 that are registered one another, to serve as conductive members 40 that connect corresponding conductive regions 101
- each of the conductive members 700 is disposed with the metallic layer 701 and the exterior conductive body 50 like those in the first embodiment.
- the LED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages.
- FIGS. 22 and 23 illustrate a sixth embodiment of the present invention. Unlike the fifth embodiment, after the penetrating hole 630 is formed in FIG. 22 , a conductive formation layer 30 is formed on a whole surface of the third insulation layer 63 and the exposed portions of the conductive region-forming surface 100 by means of, for example, sputtering.
- the conductive formation layer 30 is ground so as to remove part of the conductive formation layer 30 formed on the third insulation layer 63 , thereby leaving remaining of the conductive formation layer 30 inside the penetrating holes 630 to serve as conductive members 40 that connect corresponding conductive regions 101 .
- exterior conductive bodies 50 is formed in a similar manner as in the second embodiment, and the LED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages.
- FIG. 24 is a schematic side view showing the conventional LED package in FIG. 26 to which the metallic reflection layer in the present invention is applied. It should be noted that, a protection layer is removed, and some elements are partially exposed in FIG. 24 .
- the metallic reflection layer 61 is disposed between the substrate 91 and the conductive region-forming surface of the LED die 90 opposite to the conductive region-forming surface 900 ; thus the which is originally wasted is reflected and emitted through the main light emission surface 900 , thereby increasing the illumination of the LED package.
- FIG. 25 is a schematic side view showing the conventional LED package in FIG. 26 to which the metallic reflection layer in the present invention is applied. It should be noted that, a protection layer is removed, and some elements are partially exposed in FIG. 25 .
- a metallic reflection layer 61 is also disposed on a side surface of the LED die 90 , thus the light which is originally wasted is reflected and emitted through the main light emission surface 900 , thereby increasing the illumination of the LED package.
Abstract
An LED package and method for producing the same are described. The LED package has an LED die with a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. An insulation layer is formed on the conductive region-forming surface of the LED die, and has a plurality of openings corresponding to the conductive regions, respectively. A conductive member fills a respective opening, and is electrically connected a respective conductive regions to an exterior circuit.
Description
- This application is a Divisional patent application of co-pending application Ser. No. 11/140,900, filed on 1 Jun. 2005.
- 1. Field of the Invention
- The present invention relates to an LED package and method for producing the same, and particularly relates to a package and a method for a semiconductor wafer with high illumination and high mass production.
- 2. Background of the Invention
- With respect to
FIG. 26 , a perspective view of a conventional LED package including aLED die 90 is illustrated. The LED die 90 has a conductive region-formingsurface 900 that is also a main light emission surface, and twoconductive regions 901 disposed on the conductive region-formingsurface 900. TheLED die 90 has an opposed surface opposite to the conductive region-formingsurface 900. The LED die 90 is connected to a die-installation surface 910 of asubstrate 91 via the opposed surface thereof. The conventional LED package further includes twoconnection members 92 corresponding to the twoconductive regions 901, respectively. Eachconnection member 92 extends from the die-installation surface 910 to a predetermined portion of a backside surface opposite the die-installation surface 910. The predetermined portion of the die-installation surface 910 is used to connect electrically an exterior component (not shown). Eachconductive region 901 of theLED die 90 is electrically connected to thecorresponding connection member 92 via abonding wire 93. A protection layer is further provided to cover theLED die 90 and thebonding wire 93 on the die-installation surface 910 of thesubstrate 91. Theprotection layer 94 is made of transparent resin materials. - However, there are some disadvantages in the conventional LED package mentioned above. First, a wafer (not shown) is diced into
plural dies 90, and thedies 90 are disposed onrespective substrates 91 in turn. Thebonding wire 93 is applied for electrical connection. After theprotection layer 94 is formed, the conventional LED package is finished. Therefore, the period of manufacturing the same is too long to fabricate by mass production. - Second, light toward the opposed surface of the
LED die 90, shown as dotted lines, is only partially usable, and the remaining light, shown as solid lines, is useless and wasted. Thus, the total amount of light emitted through the mainlight emission surface 900 of theLED die 90, shown as dotted lines, is reduced, thereby, illumination of that type conventional LED package cannot be improved effectively. - An LED package and method for producing the same are disclosed for high mass production and high illumination.
- An LED package includes an LED die, an insulation layer and a conductive member. The LED die has a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. The insulation layer is formed on the conductive region-forming surface of the LED die, and has a plurality of openings corresponding to the conductive regions, respectively. The conductive member fills one of the openings, and electrically connects one respective pad to an exterior circuit.
- An LED package includes an LED die, a first insulation layer, a metallic reflection layer, a second insulation later, and a conductive member. The LED die has a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. The first insulation layer is formed on the conductive region-forming surface of the LED die, and has a plurality of channels corresponding to the conductive regions, respectively. The metallic reflection layer is formed on the first insulation layer, and has a plurality of through holes corresponding to the channels, respectively. The second insulation later is formed on the metallic reflection layer, and has a plurality of openings corresponding to the conductive regions via the channels and the through holes, respectively. The conductive member fills one of the openings, and electrically connects one of the conductive regions to an exterior circuit.
- An LED package includes an LED die, a reflection layer, a substrate, a binding wire and a protection layer. The LED die has a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. The reflection layer is formed on an opposed surface of the LED die, opposite the conductive region-forming surface. The substrate has a die-installation surface on which the LED die is disposed via the reflection layer. The substrate includes a plurality of connection members in accordance with the conductive regions for electrical connection, respectively, and each connection member extends from the die-installation surface to a predetermined portion of a back surface of the substrate, opposite the die-installation surface, for electrically connecting to an exterior circuit. The binding wire connects one of the conductive regions and a corresponding connection member. The protection layer covers the substrate for enclosing the LED die and the binding wire.
- A method for producing an LED package includes the following steps. (a) An LED wafer, which includes a plurality of LED sections. Each LED section includes a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. (b) An insulation layer is formed on the conductive region-forming surface of each LED section, and the insulation layer is patterned with a plurality of openings that correspond to the conductive regions, respectively. (c) A conductive formation layer is made on the insulation layer with the openings, and the conductive layer is removed to leave a conductive member filling each opening. (d) An exterior conductive body is arranged on the conductive member, and the LED wafer is diced into a plurality of LED packages.
- A method for producing an LED package includes the following steps. (a) An LED wafer is provided, which includes a plurality of LED sections. Each LED section includes a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. (b) A first insulation layer is formed on the conductive region-forming surface of each LED section. (c) A metallic reflection layer is made on the first insulation layer, and patterned with a plurality of through holes to expose the first insulation layer. (d) The first insulation layer is patterned with a plurality of channels that communicate with the through holes, respectively, so as to expose the corresponding conductive regions. (e) A second insulation layer is formed on the metallic reflection layer, and patterned with a plurality of openings in accordance with the through holes and the channels, so as to expose the corresponding conductive regions. (f) A conductive formation layer is disposed on the second insulation layer, an exposed portion thereof that is higher than the second insulation layer is exposed, and a conductive member is left inside each opening for electrically connecting the corresponding pad. (g) An exterior conductive body, electrically connected to an exterior circuit and to each pad, is provided, and the LED wafer is diced into a plurality of LED packages.
- A method for producing an LED package includes the following steps. (a) An LED die, including a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface, is provided. (b) A reflection layer is adhered to the LED die. The reflection layer is opposite the conductive region-forming surface. (c) A substrate is provided. The substrate has a die-installation surface to which the LED die is connected via the reflection layer. The substrate includes two connection members in accordance with the conductive regions for electrical connection, respectively, and each connection member extends from the die-installation surface to a predetermined portion of a back surface of the substrate, opposite the die-installation surface, for electrically connecting an exterior circuit. (c) A binding wire connects a respective pad and a corresponding connection member. (d) A protection layer covers the substrate for enclosing the LED die and the binding wire.
- A method for producing an LED package includes the following steps. (a) An LED wafer is provided, which includes a plurality of LED sections. Each LED section includes a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface. (b) A first insulation layer is installed on the conductive region-forming surface of each LED section. (c) A metallic reflection layer is formed on the first insulation layer. (d) A second insulation layer is formed on the metallic reflection layer, and the second insulation layer is patterned with a plurality of openings so as to expose the metallic reflection layer. (e) The metallic reflection layer is patterned with a plurality of through holes in order to expose the first insulation layer. (f) The first insulation layer is patterned with a plurality of channels that communicate with the through holes, respectively, so as to communicate with the through holes. (g) A third insulation layer is formed on the second insulation layer besides the openings, and the third insulation layer is patterned with a plurality of penetrating holes in accordance with the openings, the through holes and the channels, in order to expose the corresponding conductive regions, respectively. (h) A conductive formation layer is disposed on the third insulation layer, an exposed portion thereof that is higher than the third insulation layer is removed, and a conductive member is left inside each penetrating hole for electrically connected the corresponding conductive region. (i) An exterior conductive body, electrically connected to an exterior circuit and to each conductive region, is provided, and the LED wafer is diced into a plurality of LED packages.
- To provide a further understanding of the invention, the following detailed description illustrates embodiments and examples of the invention. Examples of the more important features of the invention have thus been summarized rather broadly in order that the detailed description thereof that follows may be better understood, and in order that the contributions to the art may be appreciated. There are, of course, additional features of the invention that will be described hereinafter which will form the subject of the claims appended hereto.
- These and other features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, where:
- FIGS. 1 to 4 are cross-sectional profiles of a first embodiment of an LED package according to the present invention;
- FIGS. 5 to 8 are cross-sectional profiles of a second embodiment of the LED package according to the present invention;
- FIGS. 9 to 14 are cross-sectional profiles of a third embodiment of the LED package according to the present invention;
-
FIGS. 15 and 16 are cross-sectional profiles of a fourth embodiment the an LED package according to the present invention; - FIGS. 17 to 21 are cross-sectional profiles of a fifth embodiment of the LED package according to the present invention;
-
FIGS. 22 and 23 are cross-sectional profiles of a sixth embodiment of the LED package according to the present invention; -
FIG. 24 is a side view of a reflection layer of a conventional LED package; -
FIG. 25 is a side view of a reflection layer of another conventional LED package; and -
FIG. 26 is a cross-sectional profile of the conventional LED package. - A first embodiment of an LED package of the present invention is illustrated in FIGS. 1 to 4. An LED wafer, partially shown in
FIG. 1 , is provided first. TheLED wafer 1 includes a plurality ofLED sections 10, and only oneLED section 10 is shown. EachLED section 10 includes an LED die, and for ease of explanation, only oneLED section 10 will be given as an example. EachLED section 10 includes a conductive region-formingsurface 100 and at least twoconductive regions 101 disposed on the conductive region-formingsurface 100. Eachconductive region 101 has disposed thereon a metallurgic layer (not shown) as a UBM (Under Bump metallurgy) in a proper manner. According to the first embodiment, a main light-emission surface on eachLED section 10 is opposite the conductive region-formingsurface 100. - A
photosensitive insulation layer 20, which is composed of polyimide materials or the like, is formed on the conductive region-formingsurface 100. Theinsulation layer 20 is patterned with a plurality ofopenings 200 corresponding to the conductive regions, respectively.. - After the
openings 200 are formed, aconductive formation layer 30, illustrated inFIGS. 2 and 3 , is formed on a whole surface of theinsulation layer 20 and reveals portions of the conductive region-formingsurface 100 via theopenings 200 by means of, for example, printing. Theconductive formation layer 30 includes, for example, conductive adhesives or the like. Furthermore, theconductive formation layer 30 is ground so as to remove part of the conductive formation layer formed on theinsulation layer 20, thereby leaving remaining of the conductive formation layer inside theopenings 200 serve asconductive members 40 that connect correspondingconductive regions 101. - Over each
conductive member 40 is disposed with ametallic layer 401 by any proper manner inFIG. 4 . Eachmetallic layer 40 includes a nickel layer and a gold layer, or may be formed from other appropriate metallic materials. On eachmetallic layer 40 is disposed an exteriorconductive body 50 used for electrically connecting an exterior circuit (not shown). Then, theLED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages. - There are some advantages in the first embodiment of the present invention:
- 1. A sheet of the
LED wafer 1 is processed. That means a plurality ofLED sections 10 are processed simultaneously and the manufacturing quantity is improved. - 2. The
conductive members 40 are formed by reflective and conductive material, so that they can be treated as reflection layers. Therefore, as shown inFIG. 4 , the light toward theconductive members 40, as indicated by solid arrows, will be reflected and emitted through the main light-emission surface, as indicated by the dotted arrows. Thus, the illumination provided by the LED package will be improved as compared with the prior art. A second embodiment of the LED package of the present invention is illustrated in FIGS. 5 to 8. An LED wafer, partially shown inFIG. 5 , is similar to that shown inFIG. 1 . After theopenings 200 are formed, aconductive formation layer 30 is formed on the whole surface of theinsulation layer 20 and the revealed portions of the conductive region-formingsurface 100 via theopenings 200 by means of, for example, sputtering. Theconductive formation layer 30 can be made of appropriate materials by any other proper manners. - The
conductive formation layer 30 is ground so as to remove part of theconductive formation layer 30 formed on theinsulation layer 20, thereby leaving remaining of theconductive formation layer 30 inside theopenings 200 to serve asconductive members 40 that connect corresponding conductive regions 101 (inFIG. 6 ). - Referring to
FIG. 7 , anauxiliary layer 64 is formed on the whole surface of theinsulation layer 20. Theauxiliary layer 64 is further patterned so as to form a plurality ofpassageways 640 that communicate withcorresponding openings 200. Eachpassageway 640 and the corresponding one of theopenings 200 together form a conductive-body formation hole. - Inside each conductive-body formation hole, an exterior
conductive body 50 is disposed in order to connect electrically the correspondingconductive member 40. The exteriorconductive body 50 has an exposed portion exposed by the conductive-body formation hole. In a preferred embodiment, the exteriorconductive body 50 can be a solder bump. - In
FIG. 8 , the exposed portion of the exteriorconductive body 50 can be ground flat and theauxiliary layer 64 is then removed. - Finally, the
LED wafer 1 can be diced along a dicing line (not shown) into a plurality of LED packages. - Advantages of the second embodiment are the same as those in the first embodiment.
- A third embodiment of the LED package of the present invention is illustrated in FIGS. 9 to 14. An LED wafer is provided in
FIGS. 9 and 10 , and is similar to that shown inFIG. 1 . - With respect to
FIG. 11 , a photosensitive and transparentfirst insulation layer 60, which is composed of polyimide materials or the like, is formed on the conductive region-formingsurface 100. - A
metallic reflection layer 61 is disposed on thefirst insulation layer 60. Themetallic reflection layer 61 is a metallic thin film of high reflectivity. Themetallic reflection layer 61 can be formed by coating metal material or by adhering a metal thin film on thefirst insulation layer 60. When themetallic reflection layer 61 is formed by coating metal material on thefirst insulation layer 60, themetallic refection layer 61 can be formed with a plurality of throughholes 610 corresponding to theconductive regions 101 by appropriate chemical processes. When themetallic reflection layer 61 is formed by adhering a metal thin film on thefirst insulation layer 60 the throughholes 610 are formed in the metal thin film before adhered on thefirst insulation layer 60, and thus, the chemical processes can be omitted. In this embodiment, themetallic reflection layer 61 is formed by adhering a metal thin film on thefirst insulation layer 60. - In
FIG. 12 , thefirst insulation layer 60 can be patterned to form a plurality ofchannels 600 each registered with a corresponding one of the throughholes 610 by using themetallic reflection layer 61 as a mask. Asecond insulation layer 62 is formed on a whole surface of themetallic reflection layer 61 and is patterned to forma plurality ofopenings 620 each extending through a corresponding throughhole 610 and acorresponding channel 600 registered with the corresponding throughhole 610 and reaching a correspondingconductive region 101, such that the opening-confining wall of each of theopening 620 is transverse to a plane of thelayer 61 to isolate thelayer 61 from the correspondingconductive region 101 while permitting access to the correspondingconductive region 101. - A
conductive formation layer 70 can be formed on a whole surface of thesecond insulation layer 62 and the revealed portions of the conductive region-formingsurface 100 via the openings 620 (inFIG. 13 ). Theconductive formation layer 70 can be ground so as to remove part of theconductive formation layer 70 formed on theinsulation layer 20, thereby leaving remaining of theconductive formation layer 70 inside theopenings 600 to serve asconductive members 700 that connect correspondingconductive regions 101 - As in the first embodiment, on each of the
conductive members 700 is sequentially disposed ametallic layer 701 and an exteriorconductive body 50. TheLED wafer 1 can be diced along a dicing line (not shown) into a plurality of LED packages. - The advantages of the third embodiment are the same as those in the first embodiment.
-
FIGS. 15 and 16 show the method for the LED package according to a fourth embodiment of the present invention. Unlike the third embodiment, after theopening 620 is formed, aconductive formation layer 30 is formed on the whole surface of thesecond insulation layer 62 and the revealed portions of the conductive region-formingsurface 100 by means of, for example, sputtering (inFIG. 15 ). - Then, the
conductive formation layer 30 is ground so as to remove part of theconductive formation layer 30 formed on thesecond insulation layer 62, thereby leaving remaining of theconductive formation layer 30 inside theopenings 620 to serve asconductive members 40 that connect correspondingconductive regions 101 - The exterior
conductive body 50 can be formed in steps similar to those of the second embodiment. Finally, theLED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages. - FIGS. 17 to 21 show the method for the LED package according to a fifth embodiment. As shown in
FIG. 17 , anLED wafer 1 similar to that of the third embodiment is provided. - A photosensitive and transparent
first insulation layer 60, ametallic reflection layer 61 formed from a metallic thin film having high reflectivity, and a photosensitivesecond insulation layer 62 are sequentially formed on the conductive region-formingsurface 100. - Referring to
FIG. 18 , thesecond insulation layer 62 is patterned to form a plurality ofopenings 620 for exposing portions of themetallic reflection layer 61 registered with the correspondingconductive regions 101. - After the
openings 620 are formed, by the use of chemical processes, themetallic reflection layer 61 is processed to form a plurality of throughholes 610 each registered with a corresponding one of theopenings 620. - Subsequently, the
first insulation layer 60 is patterned to forma plurality ofchannels 600 each registered with a corresponding one of theopenings 620 and exposing a corresponding one of the conductive regions while using thesecond insulation layer 62 and themetallic reflection layer 61 as masks. - As shown in
FIG. 19 , athird insulation layer 63 is formed on a whole surface of thesecond insulation layer 62 and the revealed portion of the conductive region-forming surface via theopenings 620. Thethird insulation layer 62 is patterned to form a plurality of penetratingholes 630 each extending through acorresponding opening 620, a corresponding throughhole 610 and acorresponding channel 600 registered with the corresponding throughhole 610 and reaching a correspondingconductive region 101, such that the opening-confining wall of each of the penetratingholes 630 is transverse to a plane of thelayer 61 to isolate thelayer 61 from the correspondingconductive region 101 while permitting access to the correspondingconductive region 101 - It should be noted that, in this embodiment, the second and
third insulation layer second insulation layer 620 in the third and fourth embodiments. - After the penetrating
hole 630 is formed, aconductive formation layer 70 is formed on a whole surface of thethird insulation layer 63 and revealed portions of the conductive region-formingsurface 100, as shown inFIG. 20 . - Referring to
FIG. 21 , theconductive formation layer 70 is ground so as to remove part of theconductive formation layer 70 formed on thethird insulation layer 63, thereby leaving remaining of theconductive formation layer 70 inside the conductive-body formation holes each formed from one throughhole 610, onechannel 600, oneopening 620 and one penetratinghole 630 that are registered one another, to serve asconductive members 40 that connect correspondingconductive regions 101 - Then, on each of the
conductive members 700 is disposed with themetallic layer 701 and the exteriorconductive body 50 like those in the first embodiment. Finally, theLED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages. - Advantages of the third embodiment are the same as those in the first embodiment.
-
FIGS. 22 and 23 illustrate a sixth embodiment of the present invention. Unlike the fifth embodiment, after the penetratinghole 630 is formed inFIG. 22 , aconductive formation layer 30 is formed on a whole surface of thethird insulation layer 63 and the exposed portions of the conductive region-formingsurface 100 by means of, for example, sputtering. - In
FIG. 23 , theconductive formation layer 30 is ground so as to remove part of theconductive formation layer 30 formed on thethird insulation layer 63, thereby leaving remaining of theconductive formation layer 30 inside the penetratingholes 630 to serve asconductive members 40 that connect correspondingconductive regions 101. - After the formation of the
conductive members 40, exteriorconductive bodies 50 is formed in a similar manner as in the second embodiment, and theLED wafer 1 is diced along a dicing line (not shown) into a plurality of LED packages. - The advantages of the third embodiment are the same as those in the first embodiment.
-
FIG. 24 is a schematic side view showing the conventional LED package inFIG. 26 to which the metallic reflection layer in the present invention is applied. It should be noted that, a protection layer is removed, and some elements are partially exposed inFIG. 24 . - The
metallic reflection layer 61 is disposed between thesubstrate 91 and the conductive region-forming surface of the LED die 90 opposite to the conductive region-formingsurface 900; thus the which is originally wasted is reflected and emitted through the mainlight emission surface 900, thereby increasing the illumination of the LED package. -
FIG. 25 is a schematic side view showing the conventional LED package inFIG. 26 to which the metallic reflection layer in the present invention is applied. It should be noted that, a protection layer is removed, and some elements are partially exposed inFIG. 25 . - In addition to the
metallic reflection layer 61 disposed between thesubstrate 91 and the opposed surface of the LED die 90 opposite to the conductive region-formingsurface 900, ametallic reflection layer 61 is also disposed on a side surface of the LED die 90, thus the light which is originally wasted is reflected and emitted through the mainlight emission surface 900, thereby increasing the illumination of the LED package. - It should be apparent to those skilled in the art that the above description is only illustrative of specific embodiments and examples of the invention. The invention should therefore cover various modifications and variations made to the herein-described structure and operations of the invention, provided they fall within the scope of the invention as defined in the following appended claims.
Claims (2)
1. An LED package, comprising:
an LED die having a conductive region-forming surface and a plurality of conductive regions disposed on the conductive region-forming surface;
a reflection layer formed on an opposed surface of the LED die opposite the conductive region-forming surface;
a substrate having a die-installation surface, whereon the LED die is disposed via the reflection layer, and wherein the substrate includes a plurality of connection members in accordance with the conductive regions for electrical connection, respectively, and each connection member extends from the die-installation surface to a predetermined portion of a back surface of the substrate, opposite the die-installation surface, for electrically connecting an exterior circuit;
a binding wire connecting a respective one of the conductive regions and a corresponding one of the connection members; and
a protection layer covering the substrate for enclosing the LED die and the binding wire.
2. The LED package as claimed in claim 1 , further including a reflection layer adhered to a surface of the LED die.
Priority Applications (1)
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US11/808,598 US20070241359A1 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
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TW93115889 | 2004-06-03 | ||
TW093115889A TW200541094A (en) | 2004-06-03 | 2004-06-03 | Light-emitting diode wafer package and packaging method thereof |
US11/140,900 US20050269585A1 (en) | 2004-06-03 | 2005-06-01 | LED package and method for producing the same |
US11/808,598 US20070241359A1 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
Related Parent Applications (1)
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US11/140,900 Division US20050269585A1 (en) | 2004-06-03 | 2005-06-01 | LED package and method for producing the same |
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US20070241359A1 true US20070241359A1 (en) | 2007-10-18 |
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US11/140,900 Abandoned US20050269585A1 (en) | 2004-06-03 | 2005-06-01 | LED package and method for producing the same |
US11/808,601 Active US7456437B2 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
US11/808,592 Expired - Fee Related US7399996B2 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
US11/808,599 Expired - Fee Related US7482637B2 (en) | 2004-06-03 | 2007-06-12 | Led package and method for producing the same |
US11/808,598 Abandoned US20070241359A1 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
US11/808,591 Abandoned US20070243647A1 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
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US11/140,900 Abandoned US20050269585A1 (en) | 2004-06-03 | 2005-06-01 | LED package and method for producing the same |
US11/808,601 Active US7456437B2 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
US11/808,592 Expired - Fee Related US7399996B2 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
US11/808,599 Expired - Fee Related US7482637B2 (en) | 2004-06-03 | 2007-06-12 | Led package and method for producing the same |
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US11/808,591 Abandoned US20070243647A1 (en) | 2004-06-03 | 2007-06-12 | LED package and method for producing the same |
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WO2000027079A1 (en) * | 1998-10-30 | 2000-05-11 | Broadcom Corporation | Internet gigabit ethernet transmitter architecture |
CN102136431B (en) * | 2010-01-22 | 2013-07-24 | 亿光电子工业股份有限公司 | Light emitting diode package and manufacturing method thereof |
Citations (1)
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US6121637A (en) * | 1997-10-03 | 2000-09-19 | Rohm Co., Ltd. | Semiconductor light emitting device with increased luminous power |
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JP2001053597A (en) * | 1999-08-06 | 2001-02-23 | Matsushita Electric Works Ltd | Illumination sensor and electronic automatic switch |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US20020096685A1 (en) * | 2000-12-27 | 2002-07-25 | Keiichi Yabusaki | Semiconductor devices, and methods of manufacture of the same |
JP3928695B2 (en) * | 2001-03-30 | 2007-06-13 | セイコーエプソン株式会社 | Surface emitting semiconductor light emitting device and method of manufacturing the same |
US7179670B2 (en) * | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
-
2004
- 2004-06-03 TW TW093115889A patent/TW200541094A/en unknown
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2005
- 2005-06-01 US US11/140,900 patent/US20050269585A1/en not_active Abandoned
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- 2007-06-12 US US11/808,599 patent/US7482637B2/en not_active Expired - Fee Related
- 2007-06-12 US US11/808,598 patent/US20070241359A1/en not_active Abandoned
- 2007-06-12 US US11/808,591 patent/US20070243647A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121637A (en) * | 1997-10-03 | 2000-09-19 | Rohm Co., Ltd. | Semiconductor light emitting device with increased luminous power |
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US20070241358A1 (en) | 2007-10-18 |
US20070249075A1 (en) | 2007-10-25 |
US20070243646A1 (en) | 2007-10-18 |
US20050269585A1 (en) | 2005-12-08 |
US7482637B2 (en) | 2009-01-27 |
TW200541094A (en) | 2005-12-16 |
US7456437B2 (en) | 2008-11-25 |
US20070243647A1 (en) | 2007-10-18 |
US7399996B2 (en) | 2008-07-15 |
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