US20070161237A1 - Nanoscopic wired-based devices and arrays - Google Patents
Nanoscopic wired-based devices and arrays Download PDFInfo
- Publication number
- US20070161237A1 US20070161237A1 US11/540,148 US54014806A US2007161237A1 US 20070161237 A1 US20070161237 A1 US 20070161237A1 US 54014806 A US54014806 A US 54014806A US 2007161237 A1 US2007161237 A1 US 2007161237A1
- Authority
- US
- United States
- Prior art keywords
- wires
- nanoscopic
- nanotubes
- wire
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000003491 array Methods 0.000 title abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 77
- 230000005684 electric field Effects 0.000 claims abstract description 19
- 230000003197 catalytic effect Effects 0.000 claims description 29
- 239000002070 nanowire Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000002041 carbon nanotube Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 5
- 239000000084 colloidal system Substances 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 abstract description 112
- 239000013545 self-assembled monolayer Substances 0.000 abstract description 41
- 239000002094 self assembled monolayer Substances 0.000 abstract description 40
- 239000002109 single walled nanotube Substances 0.000 abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 22
- 238000000926 separation method Methods 0.000 description 17
- 230000006399 behavior Effects 0.000 description 11
- 238000004364 calculation method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 230000037361 pathway Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000000813 microcontact printing Methods 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 238000005442 molecular electronic Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 230000003993 interaction Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 229920001400 block copolymer Polymers 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000007306 functionalization reaction Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 150000001343 alkyl silanes Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000007385 chemical modification Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004510 Lennard-Jones potential Methods 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004666 chemical force microscopy Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002072 nanorope Substances 0.000 description 1
- -1 nanotubes Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/75—Single-walled
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Definitions
- the present invention relates generally to the controlled formation and/or orientation of large molecules, such as nanotubes, on surfaces, and more particularly to formation of carbon nanotubes on surfaces for making nanoscopic-scale electronic devices such as memory arrays, configurable logic and other computer elements.
- the present invention provides a series of nanoscopic-scale electronic elements, methods of making nanoscopic-scale electronic elements, and methods of use of nanoscopic-scale electronic elements.
- the invention provides a nanoscopic-scale electronic device.
- the device is defined by an electrical crossbar array that includes at least one nanoscopic wire.
- the crossbar array can be of a variety of configurations such as a 1 ⁇ 8 array, 8 ⁇ 8 array, etc.
- the array can include contact electrodes in electrical contact with various wires, for example, by covalent attachment.
- Crossbar arrays provided according to the invention have densities up to about 10 12 /cm 2 .
- the invention provides techniques for making nanoscopic-scale electronic devices.
- the invention involves forming a nanoscopic wire on a surface in a pattern dictated by a chemically patterned surface.
- the nanoscopic wire can be a pre-formed wire, in which case the method involves applying the pre-formed wire to the surface in the pattern.
- the nanoscopic wire can be grown on the surface in the pattern.
- the chemically patterned surface can be patterned to direct assembly or growth of the nanoscopic wire in a predetermined orientation useful for a particular electronic device.
- the invention provides a method involving growing a nanoscopic wire in the presence of an electric field.
- the field is of intensity sufficient to orient the growth of the wire.
- This method can, optionally, be used in combination with a method involving growing a nanoscopic wire on a self-assembled monolayer.
- nanoscopic wire growth can be carried out via chemical vapor deposition (CVD).
- the invention provides a method involving forming a nanoscopic wire on a surface in a pattern dictated by a mechanically patterned surface or by gas flow.
- a method of the invention involves providing a crossbar array comprising at least two wires in crossbar array orientation, where the wires are free of contact with each other, and bringing the wires into contact with each other.
- the wires are contacted at a crossbar array junction at which they are alternately brought into contact with each other and released from contact with each other.
- the wires are nanoscopic wires.
- Another aspect of the present invention provides an article comprising a self-assembled monolayer defining a delineated pattern. At least two crossed wires are associated with the self-assembled monolayer in which at least one of the wires is a nanoscopic wire.
- the invention provides an article comprising an electric crossbar array comprising at least two crossed wires defining a memory element able to be switched between at least two readable states. The device is free of auxiliary circuitry other than the at least two crossed wires defining the memory element.
- the present invention provides a method comprising switching a memory element of a crossbar array between “on” and “off” states by alternatively biasing, at similar and opposite polarity, wires that cross the array to define the element.
- the present invention provides an article comprising an electric crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched reversibly between at least two readable states.
- the present invention provides an article comprising an electrical crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched between at least two readable states.
- the memory element is non-volatile.
- the present invention provides an article comprising an electrical crossbar array comprising at least two crossed wires defining a diode.
- the device is free of auxiliary circuitry other than the at least two crossed wires defining the diode.
- the present invention provides a method comprising providing a mixture of metallic nanotubes in semiconducting nanotubes. The method also involves separating the metallic nanotubes from the semiconducting nanotubes.
- preferred nanoscopic wires are nanotubes.
- FIG. 1 illustrates, schematically, techniques for preparing a patterned self-assembled monolayer on a surface, and use of the patterned monolayer for growth of a nanoscopic wire;
- FIG. 2 illustrates, schematically, use of patterned self-assembled monolayers for formation of overlapping (intersecting) nanoscopic wires
- FIGS. 3A and 3B illustrate, schematically, catalytic growth of a two-dimensional nanoscopic wire array
- FIG. 4 illustrates, schematically and graphically, a bistable nanoscopic wire junction (memory element) and switching mechanism in terms of energy
- FIG. 5 illustrates, schematically and graphically, a bistable/nanoscopic wire junction (memory element) and switching mechanism in terms of energy
- FIGS. 6A, 6B , and 6 C illustrate, schematically, bistable nanoscopic wire crossbar memory elements (crossbar junctions) in “on” and “off” states including three arrangements for provision of separate oppositely charged molecules;
- FIG. 7 is a cut away schematic illustration of a crossbar array of the invention.
- FIG. 8 shows a schematic of a device of the invention featuring a crossbar array
- FIG. 9A shows a top view of a crossbar array, illustrating cross talk
- FIG. 9B shows a top view of a crossbar array having diode junctions featuring intrinsic rectifying behavior
- FIG. 10A shows a schematic of an article having parallel trenches and catalyst nanoparticles for the production of crossed wires
- FIG. 10B shows a device having a crossbar array of nanowires in parallel trenches crossed by nanowires positioned over the trenches;
- FIG. 11 shows plots of energy, E T for a single 20 nm device as a function of separation at a junction
- FIG. 12 shows calculated structures of single wall nanotubes (SWNTs) in the off and on states for an initial separation of 2 nm;
- FIG. 13 shows a plot of a calculated range of initial separations for a range of device sizes which yield bistable devices for a hard material such as silicon;
- FIG. 14 shows a plot of a calculated range of initial separations for a range of device sizes which yield bistable devices for soft organic materials
- FIG. 15 shows calculations of E T for switching a 20 nm device on ( FIG. 15A ) and off ( FIG. 15B );
- FIG. 16A shows current-voltage (I-V) measurements made on lower (bound) and upper (supported) nanotubes of a typical device showing ohmic behavior with resistances of 11 and 58 k ⁇ ;
- FIG. 16B shows current-voltage (I-V) measurements made on lower (bound) and upper (supported) nanotubes of a typical device showing ohmic behavior with resistance of 112 k ⁇ ;
- FIG. 17 shows a plot of device state (on) and (off) vs. resistance.
- Nano-scale wires also referred to herein as “nanoscopic wires”.
- Nanotubes are used as one example of small wires for use in the invention and, in preferred embodiments, devices of the invention include wires of scale commensurate with nanotubes.
- a “wire” refers to any material having a conductivity of any semiconductor or any metal.
- crossbar junctions the intersections of crossed wires
- These crossbar junctions themselves can serve as both diode or memory elements of the device and as elements for switching between different states (“on” and “off” states). That is, a crossbar array device is provided in which one or more, preferably all, elements are free of auxiliary circuitry defining the elements.
- Current silicon based devices require a transistor and capacitor to store a bit in dynamic RAM, or four to six transistors are required to store a bit in static RAM.
- the present device is free of auxiliary circuitry, such as transistors and capacitors, addressing the elements to switch them between states. This is described more fully below.
- “free of auxiliary circuitry defining the elements” does not encompass electrodes and power sources or other macroscopic elements required to operate the device which are outside the nanoscopic memory element array.
- circuitry including at least one nanoscopic-scale wire is described.
- Nanotubes, in particular carbon nanotubes are primarily described and shown as examples of nanoscopic-scale wires. While nanotubes, and in particular carbon nanotubes, are preferred for use in the invention, any nanoscopic-scale wires can be used, including nanoscopic wires such as nanorods, nanowires, organic and inorganic conductive and semiconducting polymers, and the like.
- Other conductive or semiconducting elements that may not be molecular wires, but are of various small nanoscopic-scale dimension, also can be used in some instances (described more fully below), e.g.
- inorganic structures such as main group and metal atom-based wire-like silicon, transition metal-containing wires, gallium arsenide, germanium, cadmium selenide structures, thin metal wires formed by lithographic techniques, and the like.
- a wide variety of these and other nanoscopic-scale wires can be grown on and/or applied to surfaces in patterns useful for electronic devices in a manner similar to techniques described herein involving nanotubes, without undue experimentation.
- the criteria for selection of nanoscopic wires and other conductors or semiconductors for use in the invention are based, in some instances, mainly upon dimension to achieve high-density memory devices, and in other instances based on dimension and robustness.
- the wires should be able to be formed of at least one micron, preferably at least three microns, more preferably at least five microns, and more preferably still at least ten or twenty microns in length, and preferably are less than 100 nanometers, more preferably less than 75 nanometers, and more preferably less than about 50 nanometers, and more preferably still less than about 25 nanometers in thickness (height and width).
- the wires should have an aspect ratio (length to thickness) of at least about 10:1, preferably greater than about 1000:1. Selection of suitable conductors or semiconductors, including nanoscopic wires, will be apparent and readily reproducible by those of ordinary skill in the art with the benefit of the present disclosure.
- a preferred nanoscopic-scale wire (i.e. nanoscopic wire) for use in devices of the invention can be either a nanotube or a nanowire.
- Nanotubes e.g. carbon nanotubes
- Nanowires e.g. silicon nanowires
- nanotubes or nanowires or other nanoscopic scale wires are selected, it is preferred that they be selected among those that are robust.
- SWNTs Single wall nanotubes
- SWNTs are particularly preferred as they exhibit unique structural, electronic, and chemical properties that are particularly suitable for molecular electronics.
- SWNTs are formed of a single graphene sheet rolled into a seamless tube with a diameter on the order of 0.5-5 nm and a length that can exceed 10 microns.
- SWNTs can behave as one-dimensional metals or semiconductor and are currently available as a mixture of metallic and semiconducting nanotubes.
- Nanotubes including SWNTs, and characterization are known.
- Methods of selective functionalization on the ends and/or sides of nanotubes also are known, and the present invention makes use of these capabilities for molecular electronics.
- the basic structural/electronic properties of nanotubes can be used to create connections or input/output signals, and nanotubes have a size consistent with molecular scale architecture.
- Structural and/or chemical changes associated with preferred nanoscopic-scale wires used in the invention can modulate the properties of the wires and create electronic devices of a variety of types.
- covalent and noncovalent chemistry can be used to direct, with molecular precision, the assembly of these wires into structures on a massively parallel scale.
- Preferred nanoscopic wires of the present invention also are individual nanotubes, preferably individual SWNTs.
- individual nanotube means a nanotube free of contact with another nanotube (but not excluding contact of the type desired between individual nanotubes in a crossbar array or other electronic device, as described herein).
- Typical individual nanotubes can have a thickness as small as 0.5 nm.
- nanotubes produced primarily by laser vaporization techniques that produce high-quality materials, but materials formed as ropes having diameters of 2-50 nanometers or more and containing many individual nanotubes (see, for example, Thess, et al., “Crystalline Ropes of Metallic Carbon Nanotubes” Science 273, 483-486 (1996), incorporated herein by reference). While nanotube ropes can be used in the invention, individual nanotubes are preferred.
- the invention preferably utilizes metal-catalyzed CVD to synthesize high quality individual nanoscopic-scale wires such as nanotubes for molecular electronics.
- CVD synthetic procedures needed to prepare individual wires directly on surfaces and in bulk form are known, and can readily be carried out by those of ordinary skill in the art. See, for example, Kong, et al., “Synthesis of Individual Single-Walled Carbon Nanotubes on Patterned Silicon Wafers”, Nature 395, 878-881 (1998); Kong, et al., “Chemical Vapor Deposition of Methane for Single-Walled Carbon Nanotubes” Chem. Phys. Lett . 292, 567-574 (1998), both incorporated herein by reference.
- One aspect of the present invention provides an article comprising an electrical crossbar array comprising at least two crossed wires.
- the array can comprise an n ⁇ m array in which n and m can be the same or different and each is an integer greater than 0.
- at least two crossed wires can comprise a 1 ⁇ 1 array or a much larger array.
- At least one of the crossed wires is a nanoscopic wire.
- For ultra-dense arrays it is preferred that all of the wires in the array are nanoscopic wires to provide small device sizes. Other devices, however, may not require such ultradense arrays and to reduce costs, non-nanoscopic wires can be used in conjunction with nanoscopic wires.
- nanoropes can be used exclusively or in conjunction with nanotubes.
- FIG. 8 shows an example of a crossbar array of the present invention.
- crossbar array 200 comprises wires 201 - 204 supported, by various means, on a substrate comprising a thin dielectric layer 214 (e.g., SiO 2 ) which terminates conducting layer 215 (e.g., highly doped silicon).
- Wire 203 is parallel to wire 204 and these are crossed with parallel wires 201 and 202 .
- FIG. 8 shows wires 201 and 202 perpendicular to wires 203 and 204 , and typically this arrangement provides high symmetry, allowing facile integration with other systems.
- wires do not have to be crossed at 90° angles and can be crossed at any angle as desired.
- At least two crossed wires can define a junction, e.g., wire 201 is disposed adjacent wire 203 at junction 206 .
- “Disposed adjacent” does not require that wires 201 and 203 be in contact with each other, but rather that wires 201 and 203 are positioned relative to each other such that they are capable of contacting each other.
- the wires can be free of contact with no other material intermediate the wires, or spacing between the wires can be provided with the aid of intermediary material (for example, see FIGS. 5 and 6 and accompanying discussion).
- the ability of the crossed wires to contact and release from each other reversibly at cross point junctions provides the basis for addressable elements, such as switches, memory elements and diode junctions.
- wires 203 and 201 are disposed adjacent each other by positioning wire 203 directly on substrate 214 .
- Wire 203 (and 204 ) is referred herein as an example of a “bound” wire.
- Wire 203 is intermediate substrate 214 and wire 201 .
- Wire 201 is supported above wire 203 , relative to substrate 214 , by supports 210 .
- Wire 201 (and 202 ) is referred herein as an example of a “supported” wire.
- Supports 210 can be spaced periodically on either side of each bound wire (e.g., wires 203 and 204 ). This arrangement of supports 210 allows each junction (e.g., junctions 206 and 207 ) to be addressed independently of each other.
- wires 201 and 203 can be disposed adjacent each other by positioning wire 203 in a trench.
- device 230 features parallel trenches 232 .
- Bound wires are nested in each of trenches 232 which are of sufficient depth to prevent the bound wires from projecting above substrate surface 235 .
- a parallel array of crossed wires 233 can be positioned across trenches 232 . Again, bound and support wires should have sufficient spacing from each other to allow contact with each other and release from each other at junctions.
- each of wires 201 - 204 is in electrical contact with one of contact electrodes 212 . That is, in one embodiment, at least one wire is attached to the contact electrode. The attachment can be provided by covalently attaching at least one wire to the contact electrode.
- the electrode can comprise any material capable of electrical conduction, as is known in the art.
- FIG. 8 shows wires 201 and 203 not in contact, i.e., free of contact, with each other. “Free of contact” refers to a sufficient gap between crossed wires such that there is no conduction pathway between wires 201 and 203 .
- Supported wires such as wire 201 preferably are selected to possess a stiffness to allow periodic support above, yet free of contact with, wire 203 .
- wires 201 and 204 are in contact with each other at junction 207 .
- Contact can refer to electrical contact, in which there is a conduction pathway between wires 201 and 204 , or in van der Waals contact with each other. Often, for conducting wires, van der Waals contact provides electrical contact.
- wire 201 is capable of deformation localized at a region around junction 207 .
- the wire of the present invention should have a sufficient Young's modulus such that the wire is capable of deformable van der Waals contact with the crossed wire at junction 207 .
- this deformation occurs without affecting neighboring junctions, i.e., wires at neighboring junctions can independently undergo deformation or remain free of contact with a crossed wire.
- the stimulus is an electrical stimulus as provided through the at least one electrode 212 .
- a stimulus can comprise biasing the two crossed wires with opposite polarities such that electrical attraction causes wire 201 to deform towards wire 207 .
- wires 201 and 204 preferably are selected to have sufficient adhesion energy to maintain deformable van der Waals contact upon removal of the stimulus. Thus, no applied energy is required in preferred embodiments to maintain wires 201 and 204 in contact with each other. The benefits of this capability are discussed below with respect to the potential for the crossbar array of the present invention to provide bistable (i.e. non-volatile) elements.
- bound wires 203 and 204 do not require deformation of any type.
- Supported wires 201 and 202 should have sufficient stiffness to remain supported above bound wires, yet have sufficient flexibility to enable deformation to contact the bound wires without breaking and have sufficient adhesion energy to maintain van der Waals contact.
- supported wires 201 and 202 should be of sufficient robustness to withstand the strain of several deformation processes.
- Carbon nanotubes possess all these properties and are a preferred material for supported wires of the crossbar array. Of course, carbon nanotubes can be used as the bound wires.
- the supported wires should have enough friction to prevent slippage on supports, particularly during deformation processes. The interaction with the support could be further enhanced through chemical modification, if required, although this is not always necessary.
- bistable device elements provided by the invention at junctions of crossbar arrays will now be described.
- Bistable elements of the invention include those in which each of the two states is stable or metastable. These bistable elements have, as a common feature, nanoscopic scale electromechanical switching between “on” and “off” states where the “on” state involves nanoscopic-scale wires in electrical contact at the crossbar junction and in the “off” state the nanoscopic-scale wires are free of electrical contact (separated).
- Reading the “on” or “off” state of any cross junction is easily accomplished by measuring the resistance/conductance of the junction.
- the two states in this device architecture can be easily distinguished independent of fluctuations in the “on” state resistance.
- the “off” state conductance is lower than a conductance of the “on” state to an extent limited only by detection sensitivity, for typical bistable structure parameters. For example, for carbon nanotubes calculations suggest a change in “on” to “off” state resistance by a factor of 10 3 to 10 6 for typical device parameters (i.e. for typical nanotube separations in the “off” state).
- the device architecture and function is thus highly robust.
- FIG. 2 shows arrangement 26 and 28 , each including a crossbar array junction 32 .
- the “off” state is at mechanical equilibrium, i.e. when the crossed nanotubes are separated as illustrated.
- wire 30 is deflected towards wire 18 and contacts wire 18 , defining the “on” state, corresponding to van der Waals contact.
- the conduction between the crossing nanoscopic wires is either high or low in the “on” and “off” states, respectively. In the “on” state, the conduction is defined by the approximate constant wire/wire contact at the cross.
- the bistable device includes stable minima at both the “off” and “on” states by virtue of mechanical equilibrium and van der Waals contact, respectively, and can be switched “on” by biasing the nanotubes with opposite polarity.
- the electrostatic term lowers the potential minimum at contact and ultimately eliminates the barrier between “off” and “on” states to enable switching. Removal of the potential leaves the system in a stable “on” state.
- the device can be switched to the “off” state in a similar manner by applying the same potential to both tubes. Switching between the “on” and “off” states at reasonable (approximately 4-5 Volts) potentials is facilitated.
- a second general class of electromechanical switches (e.g. arrangement 26 of FIG. 2 ) are based on crossbar SWNT arrays that are initially in a contact “on” state at rest, but when electrostatically separated enter a second potential “off” minimum.
- Nanoscopic-scale devices of the invention can exhibit switching times on the order of 6-30 picoseconds, thus they can operate at a frequency of as high as about 200 GHz.
- the invention encompasses low frequency devices also.
- the energy to switch an individual device is extremely small. Much lower power is required than for silicon DRAMs at similar frequencies.
- nanotubes have extremely good thermal conductivity along their tube axes and thus are an ideal structure for removing heat from a highly integrated device.
- the nanoscopic-scale device of the present invention displays stability at a wide range of temperatures, limited only by the stability of the metal contacts.
- memory elements provided from carbon nanotubes exhibit an intrinsic thermal stability up to or higher than 1000° C.
- the memory elements also exhibit radiation stability and non-volatility of the stored information.
- FIG. 4 illustrates, schematically, energy curves associated with “on” and “off” states of a memory element 32 of a device according to one embodiment of the invention in which a first electronic conductor is suspended above and free of contact with a second electrical conductor in its lowest energy configuration (e.g. arrangement 28 of FIG. 2 ).
- Curve 51 represents the energy states in the various conformations.
- the lowest energy configuration at mechanical equilibrium is the “off” state where the crossed conductors are separated.
- the “on” state corresponds to a Van der Waals contact. Conduction between the crossed wires is high in the “on” state and low in the “off” state. Switching is carried out as follows.
- Switching from the “off” state to the “on” state is carried out by biasing the wires 18 and 30 with opposite polarity so that they are attracted toward each other until reaching a stable Van der Waals contact distance (Z vdw ).
- Switching “off”, following the energy plot of curve 54 is accomplished by biasing wires 18 and 30 with the same polarity so that they repel each other, moving toward their mechanical equilibrium distance (Z 0 ).
- the device of the invention is highly efficient in that switching between “off” and “on” states can be carried out at approximately 4-5 volts, and no external power is required to maintain the wires in either the “on” or “off” states (i.e. bistable, non-volatile).
- the “off” and “on” states can be read easily by measuring a resistance of the junctions.
- a difference between the resistance between two crossed wires must be sufficient to differentiate between the “on” and “off” position.
- One aspect of the invention involves the spatially-controlled formation of nanoscopic-scale wires into well-defined crossbar arrays.
- Two general techniques for spatially-controlled formation are described herein, one involving directed assembly of pre-formed nanoscopic-scale wires onto a surface in a desired pattern, and the second involving growth of nanoscopic-scale wires on a surface in a desired pattern directed, for example, by electric fields, highly-directional precursor flow rates (“precursor wind”), template-directed growth (growth within host channels; mechanically-directed growth), growth and assembly within host materials such as self-assembled block copolymers, inorganic host structures, and the like.
- precursor wind highly-directional precursor flow rates
- template-directed growth growth within host channels; mechanically-directed growth
- growth and assembly within host materials such as self-assembled block copolymers, inorganic host structures, and the like.
- Relatively simple (1 ⁇ 1) crossbar arrays are provided in addition to more highly integrated arrays, for example, 1 ⁇ 8, 8 ⁇ 8, 16 ⁇ 16 arrays, etc.
- the arrays can serve as memory devices, where junctions of the arrays can function as memory elements.
- the junctions can serve as diodes, for overcoming problems such as cross-talk, as described below.
- FIG. 1 a technique for directed assembly of a pre-formed nanoscopic wire onto a chemically patterned surface is illustrated schematically.
- a silicon/silicon dioxide substrate 10 is provided and coated with a self-assembled monolayer (SAM) 12 of alkylsilane, uniformly.
- SAM self-assembled monolayer
- AFM atomic force microscopy
- the pattern can be for example linear, or a crossed array of lines linear in embodiments for making nanoscopic crossed arrays.
- the pattern is linear and results in a linear patterned SAM 14 on substrate 10 defining lines of alkylsilane separated by a linear region free of SAM.
- microcontact printing can be used to apply patterned SAM 14 to substrate 10 . Microcontact printing is described below.
- a patterned SAM on substrate 10 , including linear SAM portions 14 of methyl terminated material (methyl groups exposed at the surface) separated by a line 16 of amino-terminated SAM material.
- any desired pattern can be formed where regions of the amino-terminated SAM material corresponds to regions at which wire deposition is desired.
- the patterned surface then is dipped into a suspension of wires, e.g. nanotubes, and rinsed to create an array in which wires 18 are located at regions 16 of the SAM.
- an organic solvent such as dimethyl formamide can be used to create the suspension of nanotubes. Suspension and deposition of other nanoscopic-scale wires is achievable with easily selected solvents.
- any of a variety of substrates and SAM-forming material can be used along with microcontact printing techniques, such as those described in international patent publication WO 96/29629 of Whitesides, et al., published Jun. 26, 1996 and incorporated herein by reference.
- Patterned SAM surfaces can be used to direct a variety of nanoscopic wires or nanoscopic-scale electronic elements.
- SAM-forming material can be selected, with suitable exposed chemical functionality, to direct assembly of a variety of electronic elements.
- Electronic elements, including nanotubes can be chemically tailored to be attracted specifically to specific, predetermined areas of a patterned SAM surface. Nanotubes are particularly suitable for chemical functionalization on their exterior surfaces, as is well known.
- Chemically patterned surfaces other than SAM-derivatized surfaces can be used, and many techniques for chemically patterning surfaces are known. Suitable exemplary chemistries and techniques for chemically patterning surfaces are described in, among other places, international patent publication serial no. WO 97/34025 of Hidber, et al, entitled, “Microcontact Printing of Catalytic Colloids”, and U.S. Pat. Nos. 3,873,359; 3,873,360; and 3,900,614, each by Lando, all of these documents incorporated herein by reference.
- Another example of a chemically patterned surface is a micro-phase separated block copolymer structure. These structures provide a stack of dense lamellar phases. A cut through these phases reveals a series of “lanes” wherein each lane represents a single layer.
- the block copolymer is typically an alternating block and can provide varying domains by which to dictate growth and assembly of a nanoscopic wire.
- FIG. 1 illustrates, schematically, assembly of a nanoscopic wire on a SAM in a pattern dictated by the SAM, and a SAM defining a delineated pattern with a nanoscopic wire associated with the self-assembled monolayer
- FIG. 2 illustrates, schematically, creation of a crossed microscopic wire array using self-assembled monolayer pattern direction.
- a substrate 10 including a SAM pattern having portions 14 and 16 , as described with reference to FIG. 1 and a microscopic wire 18 formed on portion 16 of the SAM is illustrated.
- AFM or another technique can be used to write a linear pattern orthogonal to the original wire orientation in regions 20 of sections 14 of the SAM.
- the open areas in the patterned surface are filled with amino-terminated SAM of the same length (amino-terminated SAM sections 22 ) or greater length (SAM sections 24 ) compared to the original SAM pattern.
- amino-terminated SAM sections 22 amino-terminated SAM sections 22
- SAM sections 24 greater length
- a wire 30 is arranged in crossbar array formation across original wire 18 at junction 32 , in contact with wire 18 .
- Arrangement 28 defines an electrical crossbar array comprising at least two nanoscopic wires in crossbar array orientation, where the crossbar array is made up of wires that are not in contact with each other at the junction.
- FIGS. 3A and 3B illustrate, schematically, one such technique involving formation of crossbar arrays via CVD in the presence of electric fields.
- an array of catalytic sites 34 are arranged opposite each other and define desired end points of parallel nanoscopic wires of a crossbar array (although pairs of catalytic sites are illustrated, as described below only one catalytic site per wire is needed).
- Clusters 34 are used to direct the growth of bridging nanoscopic-scale wires in a direction in the presence of an electric field.
- An electric field is oriented in a direction parallel to (in the direction of) the desired direction of wire growth using electrodes 36 and 38 , connected by an electrical circuit 40 , oriented behind each array of the diametrically opposed catalytic sites.
- the underlying basis for the technique is that the energy of a polarizable, anisotropic structure such as a nanoscopic-scale wire formed in accordance with the invention is lower when its long axis is aligned with the field.
- an anisotropic structure is misaligned, there is a force exerted on the structure to bring it into alignment.
- any slight misalignment with the field during nanotube growth is corrected as the force acting to re-orient it with the field becomes increasingly large as the nanotube grows.
- An alternative mechanism, for aligning nanotubes growing from an electrode is the accumulation of a net charge on a nanotube and electrostatic attraction to an oppositely biased electrode. According to the technique, the array of diametrically opposed catalytic sites 34 , in the presence of an electric field produced by circuit 40 and electrodes 36 and 38 , is exposed to conditions of chemical vapor deposition allowing growth of a nanotubes 42 between the catalytic sites.
- Catalyst sites for growing nanoscopic wires can be patterned by lithographic techniques, self-assembly with or without host phases, or patterning via proximal probes (e.g. dip pen lithography).
- one catalyst site per wire is required.
- one set of catalytic sites 34 can be provided and, in the presence of an electric field and exposure to conditions of CVD nanotubes can be grown from each catalytic site extending away from each site in the same direction to form an array of nanotubes 42 as illustrated.
- only one set of catalytic sites 44 is required.
- other techniques for directing growth of nanoscopic-scale wires can be used such as highly-directional precursor flow rates, template-directed growth, growth within host materials, etc.
- wires 18 can be formed by any technique, including conventional lithographic techniques. Then, directed growth of nanoscopic-scale elements can take place across SAM sections 22 or 24 resulting in arrangements 26 and 28 , respectively.
- Nanoscopic wires can also be formed on a surface in a pattern dictated by a mechanically patterned surface.
- Mechanically patterned surfaces can be provided by walls, channels, trenches, capillaries or the like.
- article 220 features a plurality of parallel trenches 222 which can be provided in a substrate surface by a variety of means, including lithographic techniques, microcontact printing, nano-imprinting, nano-machining, etching, whether by chemical etching, laser etching, or by a focused ion beam (FIB) machine, and related techniques.
- some substrates, such as vicinal surfaces or lattice mismatched hetero-epitaxial structures inherently exhibit such trenches, and thus can also be used as article 220 .
- Article 220 features trenches 222 milled by an FIB.
- the trenches can serve as a mechanical guide for the growth of nanowires, such as by CVD growth techniques.
- Crossed wires 233 ( FIG. 10B ) can be grown by providing a plurality of catalyst nanoparticles 224 (i.e., catalytic sites, FIG. 10A ) linearly disposed parallel to trenches 222 and along an edge of article 220 .
- FIG. 10B shows how growth of nanowires 233 can be directed from sites 234 over trenches 232 by techniques such as CVD.
- the growth can be directed under a local electric field parallel to the surface.
- the origin of growth is defined by the patterning the catalyst nanoparticles.
- Another example of wire growth along a substrate involves an article having a plurality of indentations and protrusions. By positioning protrusions on the substrate surfaces, cavities are formed and defined by the substrate surface and the plurality of indentations. These indentations can have the shape of capillaries.
- the capillary walls can be used to mechanically direct growth originating from a catalytic site or can be used to chemically pattern a surface which in turn directs growth of the nanowire.
- Nanoscopic wires can also be formed on a surface in a pattern dictated by gas flow. For example, disposing a series of catalyst nanoparticles (i.e., catalyst sites) and subjecting these nanoparticles to a gas flow of high pressure can direct growth of a nanowire in the direction of gas flow. Particularly, this method provides a novel growth technique where the gas comprises a reactant for the nanowire.
- the gas comprises a reactant for the nanowire.
- carbon precursor gases such as ethylene, acetylene, methane or carbon monoxide can be used to grow carbon nanotubes whereas silane can be used to grow silicon nanowires.
- Other precursors are also well known in the art.
- each of the nanotubes can be provided in electrical contact with a different contact electrode.
- Covalent attachment between nanotubes and contact electrodes is preferred, and is easily facilitated by functionalizing the nanotubes, at their ends, with a molecule that can attach, preferably covalently, to a contact electrode.
- Functionalization of nanotubes is known, and functional groups that attach to materials that can serve as contact electrodes are known, thus the technique of the invention is readily facilitated based on the instant disclosure.
- the ends of the nanotubes are functionalized with conjugated thiols, and the contact electrodes are gold.
- the contact electrodes are gold. See, for example, Wong, et al., “Covalently Functionalized Nanotubes as Nanometer Probes for Chemistry and Biology” Nature 394, 52-55 (1998); Wong, et al., “Covalently-Functionalized Single-Walled Carbon Nanotube Probe Tips for Chemical Force Microscopy” J. Am. Chem. Soc . 120, 8557-8558 (1998), both incorporated herein by reference.
- the end states of the nanotube can effectively couple to bulk conduction channels in the nanotubes as described by Kim, et al., “Electronic Density of States of Atomically-Resolved Single-Walled Carbon Nanotubes: Van Hove Singularities and End States” Phys. Rev. Lett . 82, 1225-1228 (1999), incorporated herein by reference.
- an active element two-dimensional density of as high as about 10 12 memory elements/cm 2 .
- low or high density arrays are envisioned.
- These element can be used to construct non-volatile random access memory (RAM), read-only memory bits and configurable logic, among other applications. This is facilitated where an array of nanoscopic wires 42 ( FIG. 3B ) are positioned at 20-nanometer intervals. Where wires 46 are similarly arranged, this density is achieved.
- an array By using nanoscopic wires such as nanotubes of 10 micron length, with a memory element every 20 nanometers along each nanotube, an array can be formed with at least 500 parallel wires in each direction, each wire containing at least 500 crossbar array junctions (memory elements). At least 250,000 memory elements can be formed in such an array.
- Three-dimensional arrays can be created as well, and can have higher integration densities than two-dimensional arrays. Three-dimensional arrays are produced using multi layer architecture extended from that described above with reference to FIG. 2 or from assembly using block polymers as directing agents.
- the invention provides a series of memory elements in a crossbar array that can be written and read (switched between “on” and “off” settings) without auxiliary circuitry addressing each element.
- FIG. 5 shows element 32 is a bistable element in that it is stable in both the “on” and “off” states, and free of auxiliary elements, such as capacitors, transistors and switches.
- a stable/metastable memory element 32 according to arrangement 26 of FIG. 2 is illustrated, schematically and graphically.
- Curve 70 represents the energy states in the various conformations.
- Switching “off” (curve 74 ): when the wires are biased with similar polarity, they are repelled from each other and spatially separated. They can rapidly return to a metastable distance where they are separated by space or molecules 72 filling the gap between them. This metastable “off” state slowly relaxes back to the “on” state within a retention time.
- FIGS. 6A-6C illustrate various embodiments in which oppositely charged molecules are allowed to organize within cross junctions between nanotubes in the “off” state according to the arrangement of FIG. 5 .
- These molecules can include short charged polymers 60 ( FIG. 6A ), surfactant molecules 62 that can form micellar structures around nanotubes ( FIG. 6B ), polymer brushes 64 grafted to a SAM that forms a basis of the structure ( FIG. 6C ), and the like.
- Another aspect of the invention provides an article comprising an electrical crossbar array comprising at least two crossed wires defining a diode.
- the device is free of auxiliary circuitry other than the at least two crossed wires defining the diode.
- bound wires are semiconducting and support wires are metallic conductors
- contact between the two wires will provide a metal/semiconductor junction, which functions as a rectifying Schottky diode at the contact junction.
- an on junction provides intrinsic rectifying behavior.
- nanotubes exist as a mixture of semiconductor and metallic conductor nanotubes. It has not been possible to separate the mixture into purely semiconducing nanotubes and metallic nanotubes.
- Rectifying junctions can also be provided by providing semiconductor nanowires, preferably n-type.
- semiconductor nanowires preferably n-type.
- a rectifying Schottky junction will result in the “on” state while for semiconducting nanotubes (which are intrinsically p-type) a rectifying p/n diode junction will result if the semiconducting nanowire is n-type doped.
- FIG. 9A shows an example of a 2 ⁇ 2 array in which bit [ 21 ] is off. Thus, a direct conducting path between bit [ 21 ] and bit [ 11 ] is not acceptable. Because there is no restriction on a direction for a conduction pathway, a pathway as represented by bold line 250 can circumvent the [ 21 ]/[ 11 ] pathway. This will cause bit [ 21 ] to appear on even though it is off.
- FIG. 9B shows a result of rectifying behavior when one set of crossed wires comprises a semiconductor and the other set of crossed wires comprises a metallic conductor. Conducting is limited to one direction only and cross talk is thus prevented.
- another aspect of the present invention provides a method involving a mixture of metallic nanotubes and semiconducting nanotubes.
- the method involves separating the metallic nanotubes from the semiconducting nanotubes. It is known that metallic nanotubes have a greater polarizability than semiconducting nanotubes by about three orders of magnitude.
- the step of separating the mixture involves subjecting the mixture to an electric field of intensity sufficient to selectively orient metallic nanotubes.
- an electric field of intensity sufficient to selectively orient metallic nanotubes.
- the intensity can be adjusted to be in accord with a field below the critical length. Above this critical length, both types of nanotubes can be aligned by the field. Below this length, the electric field is of an intensity such that the semiconducting nanotubes remain unoriented with respect to the electric field.
- junction elements can be switched between “on” and “off” states remotely, i.e., by simply addressing at least one end of each of the wires that cross to form the memory element (wires 18 and 30 in FIGS. 2 and 4 ).
- the junction elements comprises memory elements, or diodes
- some or preferably all of the memory elements are free of auxiliary circuitry defining the memory or diode elements and free of auxiliary circuitry addressing the memory or diode elements to switch them between states; the memory or diode element simply includes wires 18 and 30 that define the lead wires addressing the memory or diode element.
- auxiliary circuitry for switching a memory or diode element between “on” and “off” states auxiliary circuitry defining memory states themselves, and the meaning of a device free of these components.
- An example of auxiliary circuitry defining memory states themselves includes an electrical pathway connecting two crossed conductors at a junction that can be switched from a conducting state to a non-conducting state.
- An example of auxiliary circuitry for switching a memory element between states includes circuitry connected to the electrical pathway that can be switched to render the pathway conducting or non-conducting.
- nanoscopic-scale wires 18 and 30 need not each be flexible nanoscopic wires such as nanotubes.
- memory elements of the invention each include one wire (wire 18 in FIGS. 4 and 5 ) that need not move during switching, and can be made of essentially any material having appropriate conductivity that can be formed in the appropriate dimensions.
- wires formed by more conventional techniques such as lithography can be used as well.
- Wire 30 should be selected to meet the additional requirement of repeated flexure during switching between “off” and “on” states, as illustrated.
- Wire 30 should thus be selected to have elasticity and robustness to meet this demand. Nanotubes exhibit such robustness and are ideal for use as flexing wires 30 in the invention.
- devices of the invention can be constructed entirely by directed assembly of pre-formed wires onto a surface or entirely from directed growth of wires at a surface, or a combination, or fixed wires 18 can first be formed via a conventional technique such as lithography followed by placement of flexing wires 30 by directed assembly, or directed growth.
- Array 80 includes a series of parallel, equally-spaced wires 82 , 84 , 86 , 88 . . . , and a series of parallel, equally-spaced wires 100 , 102 , 104 , 106 . . . that cross (are perpendicular to) wires 82 , 84 . . . .
- Each of wires 82 , 84 , 86 . . . is addressed by an electrode 120 , 122 , 124 . . . at one end thereof and each of wires 100 , 102 , 104 , 106 . . .
- wires 82 , 84 , 86 . . . and wires 100 , 102 , 104 . . . require electrical contact with only one electrode, i.e., one interconnect can be used to address many individual junctions. Electrodes can be provided at opposite ends of the wires from those ends at which electrodes are shown (opposite ends not shown in FIG. 7 ), but this is optional. Each of wires 82 , 84 , 86 . . . crosses each of wires 100 , 102 , 104 . . .
- junction 160 is a memory element defining the intersection of wires 88 and 104 .
- device 80 is constructed of memory elements as illustrated in arrangement 28 of FIG. 2 , and in FIG. 4 , at mechanical equilibrium wires 88 and 104 are free of contact and element 160 is “off”.
- Biasing electrodes 126 and 144 at opposite polarity brings wires 88 and 104 , at junction 160 , into contact with each other (stable Van der Waals contact) and junction 160 is switched “on”. Bias need not be maintained between electrodes 126 and 144 to maintain element 160 in the “on” state in preferred embodiments.
- electrodes 126 and 144 are biased with the same polarity to repel wires 88 and 104 from each other at junction 160 .
- device 80 includes junctions as illustrated in arrangement 26 of FIG. 2 and FIG. 5 , at mechanical equilibrium junction 160 is in the “on” state with wires 88 and 104 contacting each other, and element 160 is switched “off” by biasing electrodes 126 and 144 at similar polarity. Switching element 160 back “on” is accomplished by biasing electrodes 126 and 144 at opposite polarity.
- Another aspect of the present invention provides an article comprising an electrical crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched irreversibly between at least two readable states.
- the device is “read-only”.
- the article comprises an electrical crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched reversibly.
- the devices can be used for a volatile RAM (e.g. require a power supply to keep the stored information) or a non-volatile RAM.
- E T E vdw +E elas +E elec (1)
- E vdw the van der Waals (vdW) energy
- E elas the elastic energy
- E elec the electrostatic energy for the device.
- the first two terms in (1) which define the static potential, can be evaluated to assess the range of parameters that yield bistable devices.
- the series of curves correspond to initial separations of 0.8, 1.0, 1.2, 1.4, 1.6, 1.8, 2.0, 2.2, 2.4 nm for carbon nanotubes, with two well-defined minima observed for initial separations of 1.0 to 2.0 nm. These minima correspond to the crossing nanotubes being separated (2.4 nm) and in vdW contact (0.8 nm).
- the vdW interaction between nanotubes can be calculated by pairwise summation of a Lennard-Jones potential that has been shown previously to provide good agreement with experiment for fullerene and nanotube systems.
- E elas 6 ⁇ ( k 3 ⁇ B ) 1 / 4 2 ⁇ [ 3 + 3 ⁇ ⁇ ⁇ ⁇ L + 3 ⁇ ( ⁇ ⁇ ⁇ L ) 2 + ( ⁇ ⁇ ⁇ L ) 3 ] ⁇ ( ⁇ ⁇ ⁇ z ) 2 ( 2 )
- B is the product of the nanotube elastic modulus and geometric moment of inertia
- k is the elastic modulus of the support
- L is the length of the suspended nanotube
- ⁇ 1 2 ⁇ ( k / B ) 1 / 4
- ⁇ z is the displacement of the suspended tube from its unstrained position.
- FIG. 11 a 20 nm device in FIG. 11 exhibits room temperature stable (i.e., barrier >>10k B T) on and off states for initial separations ranging from 1.0 to 2.2 nm.
- Si support structures (elastic modulus of 16 GPa) are not shown for clarity.
- FIG. 13 shows a wide range of device sizes when the upper nanotube is supported on either hard materials, such as silicon ( FIG. 13 ) or soft organic ( FIG. 14 ) materials.
- FIG. 14 shows calculations on an organic layer having an elastic modulus of 12 GPa.
- the range of initial separations yielding bistable devices is shown in gray.
- soft supports enable bistability for smaller devices. Both types of materials can be used for device fabrication. In general, the bistable region increases with device size, and the softer organic support yields a larger range of bistability especially in the smallest structures.
- the on and off switching thresholds can be reduced from 4.5 and 20 V to 3 and 5 V, respectively.
- the calculations also show that the electrostatic forces between adjacent nanotubes are insufficient to distort an array of elements, even at a 10 nm device scale, because most of the electrostatic interaction is localized in the small crossing region of the individual elements.
- V 1 and V 2 are the potentials applied to the two crossing nanotubes.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Communication Cables (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
- This application is a continuation of U.S. patent application Ser. No. 10/812,653, filed Mar. 29, 2004, which is a continuation of U.S. patent application Ser. No. 10/033,369, filed Oct. 24, 2004, now issued as U.S. Pat. No. 6,781,166, issued Aug. 24, 2004, which is a continuation of International Patent Application Serial No. PCT/US00/18138, filed Jun. 30, 2000, which claims priority to U.S. Provisional Patent Application Ser. No. 60/142,216, filed Jul. 02, 1999, all incorporated herein by reference.
- This invention was sponsored by the Office of Naval Research/Defense Advanced Research Projects contract number N00014-99-0495. The government has certain rights in the invention.
- The present invention relates generally to the controlled formation and/or orientation of large molecules, such as nanotubes, on surfaces, and more particularly to formation of carbon nanotubes on surfaces for making nanoscopic-scale electronic devices such as memory arrays, configurable logic and other computer elements.
- During the past several decades there has been a nearly constant exponential growth in the capabilities of silicon-based microelectronics leading, for example, to tremendous advances in our computational capabilities. Silicon-based microelectronics, however, can be made only so small. That is, there is a size limitation smaller than which silicon-based microelectronics cannot be fabricated. Specifically, the National Technology Roadmap for Semiconductors (SEMATECH, Austin, 1997) suggest that silicon-based microelectronics, which are typically said to follow “Moore's Law”, will continue only to about the year 2010. At this time, two factors are expected to bring Moore's scaling to an end. First, fundamental physical limitations will be reached for both device elements and wire interconnects that will prevent current designs from functioning reliably. Second, the concurrent exponential increase in fabrication (FAB) facility cost is expected to make it uneconomical to consider increasing integration levels further (using silicon technology) even if it is physically meaningful.
- These factors, and the expected benefits that could be derived from further dramatic increases in computational power in the relatively near future, have led many to consider new devices and computer architectures. In particular, there has been considerable interest in developing the concept of molecular electronics. Molecular-based electronics can in principle overcome the fundamental physical and economic limitations of silicon-based microelectronics; it is physically possible to have single molecular devices. For example, a conformational change that varies the conjugation in a molecule could behave as a switch or rectifier.
- Investigation has taken place into manipulation of molecules at surfaces for electronic applications. Liu, et al, in “Controlled Deposition of Individual Single-Walled Carbon Nanotubes on Chemically Functionalized Templates,” Chem. Phys. Lett. 303 (1999) 125-129 report procedures for producing individual, short carbon nanotube segments and for their deposition on chemically functionalized nanolithographic templates. Specifically, a patterned self-assembled monolayer is formed on a surface and a carbon nanotube is adsorbed onto the surface in an orientation corresponding to the pattern. The authors also describe connection of an individual carbon nanotube between two electrodes.
- Monolayers have been used to provide molecular electronic devices. Collier et al. describes the use of a Langmuir-Blodgett film of rotaxane molecules interposed between lithographically fabricated wires of micron-scale diameter (Science Vol. 285, p. 391, 1999). This system is useful for read-only memory devices, however, as the configurable elements involve irreversible oxidation of the rotaxane.
- Other studies report a single carbon nanotube constructed as an electronic switch (Collins, et al., Science 278 (1997)100), and a room-temperature transistor (Tans, et al., Nature 393 (1998) 49).
- To date, there has been considerable progress in characterization of the electrical behavior of individual or small numbers of molecule devices. However, a significant need exists for improvement in molecule-scale electronics, especially for integrating bistable and switchable devices for high-density memory arrays.
- The present invention provides a series of nanoscopic-scale electronic elements, methods of making nanoscopic-scale electronic elements, and methods of use of nanoscopic-scale electronic elements.
- In one aspect, the invention provides a nanoscopic-scale electronic device. The device is defined by an electrical crossbar array that includes at least one nanoscopic wire. The crossbar array can be of a variety of configurations such as a 1×8 array, 8×8 array, etc. The array can include contact electrodes in electrical contact with various wires, for example, by covalent attachment. Crossbar arrays provided according to the invention have densities up to about 1012/cm2.
- In another aspect the invention provides techniques for making nanoscopic-scale electronic devices. In one embodiment, the invention involves forming a nanoscopic wire on a surface in a pattern dictated by a chemically patterned surface. The nanoscopic wire can be a pre-formed wire, in which case the method involves applying the pre-formed wire to the surface in the pattern. Alternatively, the nanoscopic wire can be grown on the surface in the pattern. The chemically patterned surface can be patterned to direct assembly or growth of the nanoscopic wire in a predetermined orientation useful for a particular electronic device.
- In another embodiment the invention provides a method involving growing a nanoscopic wire in the presence of an electric field. The field is of intensity sufficient to orient the growth of the wire. This method can, optionally, be used in combination with a method involving growing a nanoscopic wire on a self-assembled monolayer. In all methods, nanoscopic wire growth can be carried out via chemical vapor deposition (CVD).
- In other embodiments, the invention provides a method involving forming a nanoscopic wire on a surface in a pattern dictated by a mechanically patterned surface or by gas flow.
- In another aspect, the invention provides methods of using electronic devices. In one aspect, a method of the invention involves providing a crossbar array comprising at least two wires in crossbar array orientation, where the wires are free of contact with each other, and bringing the wires into contact with each other. The wires are contacted at a crossbar array junction at which they are alternately brought into contact with each other and released from contact with each other. In one embodiment the wires are nanoscopic wires.
- Another aspect of the present invention provides an article comprising a self-assembled monolayer defining a delineated pattern. At least two crossed wires are associated with the self-assembled monolayer in which at least one of the wires is a nanoscopic wire. In another aspect, the invention provides an article comprising an electric crossbar array comprising at least two crossed wires defining a memory element able to be switched between at least two readable states. The device is free of auxiliary circuitry other than the at least two crossed wires defining the memory element.
- In another aspect, the present invention provides a method comprising switching a memory element of a crossbar array between “on” and “off” states by alternatively biasing, at similar and opposite polarity, wires that cross the array to define the element.
- In another aspect, the present invention provides an article comprising an electric crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched reversibly between at least two readable states.
- In another aspect, the present invention provides an article comprising an electrical crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched between at least two readable states. The memory element is non-volatile.
- In another aspect, the present invention provides an article comprising an electrical crossbar array comprising at least two crossed wires defining a diode. The device is free of auxiliary circuitry other than the at least two crossed wires defining the diode.
- In another aspect, the present invention provides a method comprising providing a mixture of metallic nanotubes in semiconducting nanotubes. The method also involves separating the metallic nanotubes from the semiconducting nanotubes.
- In all of the embodiments of the invention, preferred nanoscopic wires are nanotubes.
- Other advantages, novel features, and objects of the invention will become apparent from the following detailed description of the invention when considered in conjunction with the accompanying drawings, which are schematic and which are not intended to be drawn to scale. In the figures, each identical or nearly identical component that is illustrated in various figures is represented by a single numeral. For purposes of clarity, not every component is labeled in every figure, nor is every component of each embodiment of the invention shown where illustration is not necessary to allow those of ordinary skill in the art to understand the invention.
-
FIG. 1 illustrates, schematically, techniques for preparing a patterned self-assembled monolayer on a surface, and use of the patterned monolayer for growth of a nanoscopic wire; -
FIG. 2 illustrates, schematically, use of patterned self-assembled monolayers for formation of overlapping (intersecting) nanoscopic wires; -
FIGS. 3A and 3B illustrate, schematically, catalytic growth of a two-dimensional nanoscopic wire array; -
FIG. 4 illustrates, schematically and graphically, a bistable nanoscopic wire junction (memory element) and switching mechanism in terms of energy; -
FIG. 5 illustrates, schematically and graphically, a bistable/nanoscopic wire junction (memory element) and switching mechanism in terms of energy; -
FIGS. 6A, 6B , and 6C illustrate, schematically, bistable nanoscopic wire crossbar memory elements (crossbar junctions) in “on” and “off” states including three arrangements for provision of separate oppositely charged molecules; -
FIG. 7 is a cut away schematic illustration of a crossbar array of the invention. -
FIG. 8 shows a schematic of a device of the invention featuring a crossbar array; -
FIG. 9A shows a top view of a crossbar array, illustrating cross talk; -
FIG. 9B shows a top view of a crossbar array having diode junctions featuring intrinsic rectifying behavior; -
FIG. 10A shows a schematic of an article having parallel trenches and catalyst nanoparticles for the production of crossed wires; -
FIG. 10B shows a device having a crossbar array of nanowires in parallel trenches crossed by nanowires positioned over the trenches; -
FIG. 11 shows plots of energy, ET for a single 20 nm device as a function of separation at a junction; -
FIG. 12 shows calculated structures of single wall nanotubes (SWNTs) in the off and on states for an initial separation of 2 nm; -
FIG. 13 shows a plot of a calculated range of initial separations for a range of device sizes which yield bistable devices for a hard material such as silicon; -
FIG. 14 shows a plot of a calculated range of initial separations for a range of device sizes which yield bistable devices for soft organic materials; -
FIG. 15 shows calculations of ET for switching a 20 nm device on (FIG. 15A ) and off (FIG. 15B ); -
FIG. 16A shows current-voltage (I-V) measurements made on lower (bound) and upper (supported) nanotubes of a typical device showing ohmic behavior with resistances of 11 and 58 kΩ; -
FIG. 16B shows current-voltage (I-V) measurements made on lower (bound) and upper (supported) nanotubes of a typical device showing ohmic behavior with resistance of 112 kΩ; and -
FIG. 17 shows a plot of device state (on) and (off) vs. resistance. - The present invention provides a series of techniques and devices involving nanoscopic-scale wires, also referred to herein as “nanoscopic wires”. “Nanoscopic-scale” or “nano” is meant to include elements of widths or diameters of less than 1 μm. Nanotubes are used as one example of small wires for use in the invention and, in preferred embodiments, devices of the invention include wires of scale commensurate with nanotubes. A “wire” refers to any material having a conductivity of any semiconductor or any metal.
- One significant aspect of the invention involves electronic memory elements in which crossbar junctions (the intersections of crossed wires) are defined by at least one nanoscopic-scale wire. These crossbar junctions themselves can serve as both diode or memory elements of the device and as elements for switching between different states (“on” and “off” states). That is, a crossbar array device is provided in which one or more, preferably all, elements are free of auxiliary circuitry defining the elements. Current silicon based devices require a transistor and capacitor to store a bit in dynamic RAM, or four to six transistors are required to store a bit in static RAM. The present device is free of auxiliary circuitry, such as transistors and capacitors, addressing the elements to switch them between states. This is described more fully below. Of course, “free of auxiliary circuitry defining the elements” does not encompass electrodes and power sources or other macroscopic elements required to operate the device which are outside the nanoscopic memory element array.
- In all of the exemplary embodiments described herein, circuitry including at least one nanoscopic-scale wire is described. Nanotubes, in particular carbon nanotubes, are primarily described and shown as examples of nanoscopic-scale wires. While nanotubes, and in particular carbon nanotubes, are preferred for use in the invention, any nanoscopic-scale wires can be used, including nanoscopic wires such as nanorods, nanowires, organic and inorganic conductive and semiconducting polymers, and the like. Other conductive or semiconducting elements that may not be molecular wires, but are of various small nanoscopic-scale dimension, also can be used in some instances (described more fully below), e.g. inorganic structures such as main group and metal atom-based wire-like silicon, transition metal-containing wires, gallium arsenide, germanium, cadmium selenide structures, thin metal wires formed by lithographic techniques, and the like. A wide variety of these and other nanoscopic-scale wires can be grown on and/or applied to surfaces in patterns useful for electronic devices in a manner similar to techniques described herein involving nanotubes, without undue experimentation. The criteria for selection of nanoscopic wires and other conductors or semiconductors for use in the invention are based, in some instances, mainly upon dimension to achieve high-density memory devices, and in other instances based on dimension and robustness. The wires should be able to be formed of at least one micron, preferably at least three microns, more preferably at least five microns, and more preferably still at least ten or twenty microns in length, and preferably are less than 100 nanometers, more preferably less than 75 nanometers, and more preferably less than about 50 nanometers, and more preferably still less than about 25 nanometers in thickness (height and width). The wires should have an aspect ratio (length to thickness) of at least about 10:1, preferably greater than about 1000:1. Selection of suitable conductors or semiconductors, including nanoscopic wires, will be apparent and readily reproducible by those of ordinary skill in the art with the benefit of the present disclosure.
- A preferred nanoscopic-scale wire (i.e. nanoscopic wire) for use in devices of the invention can be either a nanotube or a nanowire. Nanotubes (e.g. carbon nanotubes) are hollow. Nanowires (e.g. silicon nanowires) are solid. Whether nanotubes or nanowires or other nanoscopic scale wires are selected, it is preferred that they be selected among those that are robust.
- The invention facilitates reliable connection of input/output electronic lines to nanoscopic devices in a highly integrated system such that the state of the device, or individual junctions, is readable in the presence of many other connected elements. System architectures of the invention are defect and/or fault tolerant. Single wall nanotubes (SWNTs) are particularly preferred as they exhibit unique structural, electronic, and chemical properties that are particularly suitable for molecular electronics. Structurally, SWNTs are formed of a single graphene sheet rolled into a seamless tube with a diameter on the order of 0.5-5 nm and a length that can exceed 10 microns. Depending on diameter and helicity, SWNTs can behave as one-dimensional metals or semiconductor and are currently available as a mixture of metallic and semiconducting nanotubes. Methods of manufacture of nanotubes, including SWNTs, and characterization are known. Methods of selective functionalization on the ends and/or sides of nanotubes also are known, and the present invention makes use of these capabilities for molecular electronics. The basic structural/electronic properties of nanotubes can be used to create connections or input/output signals, and nanotubes have a size consistent with molecular scale architecture.
- Structural and/or chemical changes associated with preferred nanoscopic-scale wires used in the invention can modulate the properties of the wires and create electronic devices of a variety of types. In addition, covalent and noncovalent chemistry can be used to direct, with molecular precision, the assembly of these wires into structures on a massively parallel scale.
- Preferred nanoscopic wires of the present invention also are individual nanotubes, preferably individual SWNTs. As used herein, “individual nanotube” means a nanotube free of contact with another nanotube (but not excluding contact of the type desired between individual nanotubes in a crossbar array or other electronic device, as described herein). Typical individual nanotubes can have a thickness as small as 0.5 nm. This is in contrast to nanotubes produced primarily by laser vaporization techniques that produce high-quality materials, but materials formed as ropes having diameters of 2-50 nanometers or more and containing many individual nanotubes (see, for example, Thess, et al., “Crystalline Ropes of Metallic Carbon Nanotubes” Science 273, 483-486 (1996), incorporated herein by reference). While nanotube ropes can be used in the invention, individual nanotubes are preferred.
- The invention preferably utilizes metal-catalyzed CVD to synthesize high quality individual nanoscopic-scale wires such as nanotubes for molecular electronics. CVD synthetic procedures needed to prepare individual wires directly on surfaces and in bulk form are known, and can readily be carried out by those of ordinary skill in the art. See, for example, Kong, et al., “Synthesis of Individual Single-Walled Carbon Nanotubes on Patterned Silicon Wafers”, Nature 395, 878-881 (1998); Kong, et al., “Chemical Vapor Deposition of Methane for Single-Walled Carbon Nanotubes” Chem. Phys. Lett. 292, 567-574 (1998), both incorporated herein by reference.
- One aspect of the present invention provides an article comprising an electrical crossbar array comprising at least two crossed wires. The array can comprise an n×m array in which n and m can be the same or different and each is an integer greater than 0. Thus, at least two crossed wires can comprise a 1×1 array or a much larger array. At least one of the crossed wires is a nanoscopic wire. For ultra-dense arrays, it is preferred that all of the wires in the array are nanoscopic wires to provide small device sizes. Other devices, however, may not require such ultradense arrays and to reduce costs, non-nanoscopic wires can be used in conjunction with nanoscopic wires. Alternatively, nanoropes can be used exclusively or in conjunction with nanotubes.
-
FIG. 8 shows an example of a crossbar array of the present invention. InFIG. 8 ,crossbar array 200 comprises wires 201-204 supported, by various means, on a substrate comprising a thin dielectric layer 214 (e.g., SiO2) which terminates conducting layer 215 (e.g., highly doped silicon).Wire 203 is parallel to wire 204 and these are crossed withparallel wires FIG. 8 showswires wires - At least two crossed wires can define a junction, e.g.,
wire 201 is disposedadjacent wire 203 atjunction 206. “Disposed adjacent” does not require thatwires wires - In one embodiment,
wires wire 203 directly onsubstrate 214. Wire 203 (and 204) is referred herein as an example of a “bound” wire.Wire 203 isintermediate substrate 214 andwire 201.Wire 201 is supported abovewire 203, relative tosubstrate 214, by supports 210. Wire 201 (and 202) is referred herein as an example of a “supported” wire.Supports 210 can be spaced periodically on either side of each bound wire (e.g.,wires 203 and 204). This arrangement ofsupports 210 allows each junction (e.g.,junctions 206 and 207) to be addressed independently of each other. - In another embodiment,
wires wire 203 in a trench. Referring toFIG. 10B ,device 230 featuresparallel trenches 232. Bound wires are nested in each oftrenches 232 which are of sufficient depth to prevent the bound wires from projecting abovesubstrate surface 235. A parallel array of crossedwires 233 can be positioned acrosstrenches 232. Again, bound and support wires should have sufficient spacing from each other to allow contact with each other and release from each other at junctions. - Referring back to
FIG. 8 , at least one end of each of wires 201-204 is in electrical contact with one ofcontact electrodes 212. That is, in one embodiment, at least one wire is attached to the contact electrode. The attachment can be provided by covalently attaching at least one wire to the contact electrode. The electrode can comprise any material capable of electrical conduction, as is known in the art. -
FIG. 8 showswires wires wire 201 preferably are selected to possess a stiffness to allow periodic support above, yet free of contact with,wire 203. - In contrast,
wires junction 207. “Contact” can refer to electrical contact, in which there is a conduction pathway betweenwires wire 201 is capable of deformation localized at a region aroundjunction 207. Thus, the wire of the present invention should have a sufficient Young's modulus such that the wire is capable of deformable van der Waals contact with the crossed wire atjunction 207. In addition, this deformation occurs without affecting neighboring junctions, i.e., wires at neighboring junctions can independently undergo deformation or remain free of contact with a crossed wire. - It is another feature of the array of the present invention that deformation occurs via application of a stimulus. Typically, the stimulus is an electrical stimulus as provided through the at least one
electrode 212. A stimulus can comprise biasing the two crossed wires with opposite polarities such that electrical attraction causeswire 201 to deform towardswire 207. In addition,wires wires - It can be seen that bound
wires wires wires - A device that is capable of maintaining at least two different states, e.g., contact between crossed wires or lack of contact between crossed wires without the need for applied energy to maintain either state, is referred to as a “bistable” device. As an example, bistable device elements provided by the invention at junctions of crossbar arrays will now be described. Bistable elements of the invention include those in which each of the two states is stable or metastable. These bistable elements have, as a common feature, nanoscopic scale electromechanical switching between “on” and “off” states where the “on” state involves nanoscopic-scale wires in electrical contact at the crossbar junction and in the “off” state the nanoscopic-scale wires are free of electrical contact (separated). Reading the “on” or “off” state of any cross junction is easily accomplished by measuring the resistance/conductance of the junction. The two states in this device architecture can be easily distinguished independent of fluctuations in the “on” state resistance. The “off” state conductance is lower than a conductance of the “on” state to an extent limited only by detection sensitivity, for typical bistable structure parameters. For example, for carbon nanotubes calculations suggest a change in “on” to “off” state resistance by a factor of 103 to 106 for typical device parameters (i.e. for typical nanotube separations in the “off” state). The device architecture and function is thus highly robust.
- The operation of bistable switching elements of the invention now will be described with reference to
FIG. 2 .FIG. 2 showsarrangement crossbar array junction 32. With reference toarrangement 28 ofFIG. 2 , the “off” state is at mechanical equilibrium, i.e. when the crossed nanotubes are separated as illustrated. As a voltage is established betweenwires wire 30 is deflected towardswire 18 andcontacts wire 18, defining the “on” state, corresponding to van der Waals contact. The conduction between the crossing nanoscopic wires is either high or low in the “on” and “off” states, respectively. In the “on” state, the conduction is defined by the approximate constant wire/wire contact at the cross. In the “off” state, conduction occurs by quantum mechanical tunneling and will be much lower. The bistable device includes stable minima at both the “off” and “on” states by virtue of mechanical equilibrium and van der Waals contact, respectively, and can be switched “on” by biasing the nanotubes with opposite polarity. The electrostatic term lowers the potential minimum at contact and ultimately eliminates the barrier between “off” and “on” states to enable switching. Removal of the potential leaves the system in a stable “on” state. The device can be switched to the “off” state in a similar manner by applying the same potential to both tubes. Switching between the “on” and “off” states at reasonable (approximately 4-5 Volts) potentials is facilitated. A second general class of electromechanical switches (e.g. arrangement 26 ofFIG. 2 ) are based on crossbar SWNT arrays that are initially in a contact “on” state at rest, but when electrostatically separated enter a second potential “off” minimum. - Nanoscopic-scale devices of the invention can exhibit switching times on the order of 6-30 picoseconds, thus they can operate at a frequency of as high as about 200 GHz. Thus, the invention encompasses low frequency devices also. Moreover, the energy to switch an individual device is extremely small. Much lower power is required than for silicon DRAMs at similar frequencies. Additionally, nanotubes have extremely good thermal conductivity along their tube axes and thus are an ideal structure for removing heat from a highly integrated device.
- In addition, the nanoscopic-scale device of the present invention displays stability at a wide range of temperatures, limited only by the stability of the metal contacts. For example, memory elements provided from carbon nanotubes exhibit an intrinsic thermal stability up to or higher than 1000° C. The memory elements also exhibit radiation stability and non-volatility of the stored information.
-
FIG. 4 illustrates, schematically, energy curves associated with “on” and “off” states of amemory element 32 of a device according to one embodiment of the invention in which a first electronic conductor is suspended above and free of contact with a second electrical conductor in its lowest energy configuration (e.g. arrangement 28 ofFIG. 2 ).Curve 51 represents the energy states in the various conformations. The lowest energy configuration at mechanical equilibrium is the “off” state where the crossed conductors are separated. The “on” state corresponds to a Van der Waals contact. Conduction between the crossed wires is high in the “on” state and low in the “off” state. Switching is carried out as follows. Switching from the “off” state to the “on” state (following the energy plot of curve 56) is carried out by biasing thewires curve 54, is accomplished by biasingwires - The “off” and “on” states can be read easily by measuring a resistance of the junctions. In one embodiment, a difference between the resistance between two crossed wires must be sufficient to differentiate between the “on” and “off” position.
- One aspect of the invention involves the spatially-controlled formation of nanoscopic-scale wires into well-defined crossbar arrays. Two general techniques for spatially-controlled formation are described herein, one involving directed assembly of pre-formed nanoscopic-scale wires onto a surface in a desired pattern, and the second involving growth of nanoscopic-scale wires on a surface in a desired pattern directed, for example, by electric fields, highly-directional precursor flow rates (“precursor wind”), template-directed growth (growth within host channels; mechanically-directed growth), growth and assembly within host materials such as self-assembled block copolymers, inorganic host structures, and the like. Relatively simple (1×1) crossbar arrays are provided in addition to more highly integrated arrays, for example, 1×8, 8×8, 16×16 arrays, etc. The arrays can serve as memory devices, where junctions of the arrays can function as memory elements. Alternatively, the junctions can serve as diodes, for overcoming problems such as cross-talk, as described below.
- Referring now to
FIG. 1 , a technique for directed assembly of a pre-formed nanoscopic wire onto a chemically patterned surface is illustrated schematically. InFIG. 1 a silicon/silicon dioxide substrate 10 is provided and coated with a self-assembled monolayer (SAM) 12 of alkylsilane, uniformly. In one example of patterning the SAM for directed assembly of nanoscopic scale circuitry atomic force microscopy (AFM) then is used to write, at high resolution, a pattern inSAM 12 at which the SAM is removed. The pattern can be for example linear, or a crossed array of lines linear in embodiments for making nanoscopic crossed arrays. As illustrated, the pattern is linear and results in a linear patternedSAM 14 onsubstrate 10 defining lines of alkylsilane separated by a linear region free of SAM. In another technique, microcontact printing can be used to apply patternedSAM 14 tosubstrate 10. Microcontact printing is described below. - Next, open areas in the patterned surface (the SAM-free linear region between linear SAM 14) is filled with an amino-terminated SAM that interacts in a highly specific manner with a nanoscopic wire such as a nanotube. The result is a patterned SAM, on
substrate 10, includinglinear SAM portions 14 of methyl terminated material (methyl groups exposed at the surface) separated by aline 16 of amino-terminated SAM material. Of course, any desired pattern can be formed where regions of the amino-terminated SAM material corresponds to regions at which wire deposition is desired. The patterned surface then is dipped into a suspension of wires, e.g. nanotubes, and rinsed to create an array in whichwires 18 are located atregions 16 of the SAM. Where nanotubes are used, an organic solvent such as dimethyl formamide can be used to create the suspension of nanotubes. Suspension and deposition of other nanoscopic-scale wires is achievable with easily selected solvents. - Any of a variety of substrates and SAM-forming material can be used along with microcontact printing techniques, such as those described in international patent publication WO 96/29629 of Whitesides, et al., published Jun. 26, 1996 and incorporated herein by reference. Patterned SAM surfaces can be used to direct a variety of nanoscopic wires or nanoscopic-scale electronic elements. SAM-forming material can be selected, with suitable exposed chemical functionality, to direct assembly of a variety of electronic elements. Electronic elements, including nanotubes, can be chemically tailored to be attracted specifically to specific, predetermined areas of a patterned SAM surface. Nanotubes are particularly suitable for chemical functionalization on their exterior surfaces, as is well known.
- Chemically patterned surfaces other than SAM-derivatized surfaces can be used, and many techniques for chemically patterning surfaces are known. Suitable exemplary chemistries and techniques for chemically patterning surfaces are described in, among other places, international patent publication serial no. WO 97/34025 of Hidber, et al, entitled, “Microcontact Printing of Catalytic Colloids”, and U.S. Pat. Nos. 3,873,359; 3,873,360; and 3,900,614, each by Lando, all of these documents incorporated herein by reference. Another example of a chemically patterned surface is a micro-phase separated block copolymer structure. These structures provide a stack of dense lamellar phases. A cut through these phases reveals a series of “lanes” wherein each lane represents a single layer. The block copolymer is typically an alternating block and can provide varying domains by which to dictate growth and assembly of a nanoscopic wire.
- While
FIG. 1 illustrates, schematically, assembly of a nanoscopic wire on a SAM in a pattern dictated by the SAM, and a SAM defining a delineated pattern with a nanoscopic wire associated with the self-assembled monolayer,FIG. 2 illustrates, schematically, creation of a crossed microscopic wire array using self-assembled monolayer pattern direction. InFIG. 2 a substrate 10 including a SAMpattern having portions FIG. 1 , and amicroscopic wire 18 formed onportion 16 of the SAM is illustrated. AFM or another technique (e.g., electron-beam lithography, etc.) can be used to write a linear pattern orthogonal to the original wire orientation inregions 20 ofsections 14 of the SAM. Next, the open areas in the patterned surface are filled with amino-terminated SAM of the same length (amino-terminated SAM sections 22) or greater length (SAM sections 24) compared to the original SAM pattern. This results in anarrangement 26 in which all SAM material is of the same height, or anarrangement 28 in which portions of the SAM arrangement extend above the plane of the original SAM and, optionally, above the height of thewire 18 to provide clearance above the wire. The patterned surface then is dipped into a suspension of additional nanoscopic-scale wires and rinsed to create a crossbar array. In arrangement 26 awire 30 is arranged in crossbar array formation acrossoriginal wire 18 atjunction 32, in contact withwire 18.Arrangement 28 defines an electrical crossbar array comprising at least two nanoscopic wires in crossbar array orientation, where the crossbar array is made up of wires that are not in contact with each other at the junction. These arrangements can be used directly as a bistable device memory element, as will be apparent to those of ordinary skill in the art with the benefit of the description below. - Described above are techniques for assembly of pre-formed nanoscopic-scale electronic elements onto a surface. Another general technique included in the invention for creation of nanoscopic-scale electronic devices involves directed growth of nanoscopic-scale elements on a surface in a predetermined pattern.
FIGS. 3A and 3B illustrate, schematically, one such technique involving formation of crossbar arrays via CVD in the presence of electric fields. InFIG. 3A , an array ofcatalytic sites 34 are arranged opposite each other and define desired end points of parallel nanoscopic wires of a crossbar array (although pairs of catalytic sites are illustrated, as described below only one catalytic site per wire is needed).Clusters 34 are used to direct the growth of bridging nanoscopic-scale wires in a direction in the presence of an electric field. An electric field is oriented in a direction parallel to (in the direction of) the desired direction of wiregrowth using electrodes electrical circuit 40, oriented behind each array of the diametrically opposed catalytic sites. The underlying basis for the technique is that the energy of a polarizable, anisotropic structure such as a nanoscopic-scale wire formed in accordance with the invention is lower when its long axis is aligned with the field. Correspondingly, when an anisotropic structure is misaligned, there is a force exerted on the structure to bring it into alignment. This basic concept of electric field alignment has been used previously for the alignment of anisotropic molecules through micron scale fibers, and thus the technique will be understood by and reproducible by those of ordinary skill in the art with the benefit of the instant disclosure. The highly anisotropic, or one-dimensional, structure of nanotubes, especially SWNTs, leads to a much greater polarization anisotropy (exceeds 1,000:1 along the tube axis) than would be present for a three-dimensional material of similar dimensions (for example, a copper nanowire), thus nanotubes are particularly preferred for this technique. This will lead to greater energy/force terms for the nanotube aligned with the field. Any slight misalignment with the field during nanotube growth is corrected as the force acting to re-orient it with the field becomes increasingly large as the nanotube grows. An alternative mechanism, for aligning nanotubes growing from an electrode is the accumulation of a net charge on a nanotube and electrostatic attraction to an oppositely biased electrode. According to the technique, the array of diametrically opposedcatalytic sites 34, in the presence of an electric field produced bycircuit 40 andelectrodes nanotubes 42 between the catalytic sites. - Re-orientation of the structure such that a series of
catalytic sites 44 are diametrically opposed in a direction perpendicular tocatalytic sites 34, with creation of an electrical field in a direction perpendicular tonanotubes 42, and exposure to chemical vapor deposition conditions results in deposition ofnanotubes 46 aligned in crossbar array orientation perpendicular tonanotubes 42. - Catalyst sites for growing nanoscopic wires can be patterned by lithographic techniques, self-assembly with or without host phases, or patterning via proximal probes (e.g. dip pen lithography).
- As mentioned, only one catalyst site per wire is required. With reference to
FIG. 3A , one set ofcatalytic sites 34 can be provided and, in the presence of an electric field and exposure to conditions of CVD nanotubes can be grown from each catalytic site extending away from each site in the same direction to form an array ofnanotubes 42 as illustrated. Similarly, with reference toFIG. 3B , only one set ofcatalytic sites 44 is required. As mentioned above also, other techniques for directing growth of nanoscopic-scale wires can be used such as highly-directional precursor flow rates, template-directed growth, growth within host materials, etc. - A combination of techniques to form crossbar arrays of the invention can be used. With reference to
FIG. 2 ,wires 18 can be formed by any technique, including conventional lithographic techniques. Then, directed growth of nanoscopic-scale elements can take place acrossSAM sections arrangements - Nanoscopic wires can also be formed on a surface in a pattern dictated by a mechanically patterned surface. Mechanically patterned surfaces can be provided by walls, channels, trenches, capillaries or the like. Referring back to
FIG. 10 ,article 220 features a plurality ofparallel trenches 222 which can be provided in a substrate surface by a variety of means, including lithographic techniques, microcontact printing, nano-imprinting, nano-machining, etching, whether by chemical etching, laser etching, or by a focused ion beam (FIB) machine, and related techniques. Alternatively, some substrates, such as vicinal surfaces or lattice mismatched hetero-epitaxial structures inherently exhibit such trenches, and thus can also be used asarticle 220.Article 220 featurestrenches 222 milled by an FIB. The trenches can serve as a mechanical guide for the growth of nanowires, such as by CVD growth techniques. Crossed wires 233 (FIG. 10B ) can be grown by providing a plurality of catalyst nanoparticles 224 (i.e., catalytic sites,FIG. 10A ) linearly disposed parallel totrenches 222 and along an edge ofarticle 220.FIG. 10B shows how growth ofnanowires 233 can be directed fromsites 234 overtrenches 232 by techniques such as CVD. The growth can be directed under a local electric field parallel to the surface. The origin of growth is defined by the patterning the catalyst nanoparticles. - Another example of wire growth along a substrate involves an article having a plurality of indentations and protrusions. By positioning protrusions on the substrate surfaces, cavities are formed and defined by the substrate surface and the plurality of indentations. These indentations can have the shape of capillaries. The capillary walls can be used to mechanically direct growth originating from a catalytic site or can be used to chemically pattern a surface which in turn directs growth of the nanowire.
- Nanoscopic wires can also be formed on a surface in a pattern dictated by gas flow. For example, disposing a series of catalyst nanoparticles (i.e., catalyst sites) and subjecting these nanoparticles to a gas flow of high pressure can direct growth of a nanowire in the direction of gas flow. Particularly, this method provides a novel growth technique where the gas comprises a reactant for the nanowire. For example, carbon precursor gases such as ethylene, acetylene, methane or carbon monoxide can be used to grow carbon nanotubes whereas silane can be used to grow silicon nanowires. Other precursors are also well known in the art.
- Referring again to
FIG. 3A and 3B , through placement ofcatalytic sites catalytic sites - Using the techniques of the invention it is possible to achieve an active element two-dimensional density of as high as about 1012 memory elements/cm2. Thus, low or high density arrays are envisioned. These element can be used to construct non-volatile random access memory (RAM), read-only memory bits and configurable logic, among other applications. This is facilitated where an array of nanoscopic wires 42 (
FIG. 3B ) are positioned at 20-nanometer intervals. Wherewires 46 are similarly arranged, this density is achieved. By using nanoscopic wires such as nanotubes of 10 micron length, with a memory element every 20 nanometers along each nanotube, an array can be formed with at least 500 parallel wires in each direction, each wire containing at least 500 crossbar array junctions (memory elements). At least 250,000 memory elements can be formed in such an array. Three-dimensional arrays can be created as well, and can have higher integration densities than two-dimensional arrays. Three-dimensional arrays are produced using multi layer architecture extended from that described above with reference toFIG. 2 or from assembly using block polymers as directing agents. - As mentioned above, the invention provides a series of memory elements in a crossbar array that can be written and read (switched between “on” and “off” settings) without auxiliary circuitry addressing each element. For example,
FIG. 5 showselement 32 is a bistable element in that it is stable in both the “on” and “off” states, and free of auxiliary elements, such as capacitors, transistors and switches. - Referring now to
FIG. 5 , a stable/metastable memory element 32 according toarrangement 26 ofFIG. 2 is illustrated, schematically and graphically. As illustrated, two touching crossedwires Curve 70 represents the energy states in the various conformations. Switching “off” (curve 74): when the wires are biased with similar polarity, they are repelled from each other and spatially separated. They can rapidly return to a metastable distance where they are separated by space ormolecules 72 filling the gap between them. This metastable “off” state slowly relaxes back to the “on” state within a retention time. Switching “on” (curve 76): when the nanotubes are biased with opposite polarity, they attract each other, accelerate their relaxation to a van der Waals contact distance.FIGS. 6A-6C illustrate various embodiments in which oppositely charged molecules are allowed to organize within cross junctions between nanotubes in the “off” state according to the arrangement ofFIG. 5 . These molecules can include short charged polymers 60 (FIG. 6A ),surfactant molecules 62 that can form micellar structures around nanotubes (FIG. 6B ), polymer brushes 64 grafted to a SAM that forms a basis of the structure (FIG. 6C ), and the like. - Another aspect of the invention provides an article comprising an electrical crossbar array comprising at least two crossed wires defining a diode. The device is free of auxiliary circuitry other than the at least two crossed wires defining the diode. For example, if bound wires are semiconducting and support wires are metallic conductors, contact between the two wires will provide a metal/semiconductor junction, which functions as a rectifying Schottky diode at the contact junction. Thus, an on junction provides intrinsic rectifying behavior. Currently, nanotubes exist as a mixture of semiconductor and metallic conductor nanotubes. It has not been possible to separate the mixture into purely semiconducing nanotubes and metallic nanotubes. Rectifying junctions can also be provided by providing semiconductor nanowires, preferably n-type. For metallic nanotubes, a rectifying Schottky junction will result in the “on” state while for semiconducting nanotubes (which are intrinsically p-type) a rectifying p/n diode junction will result if the semiconducting nanowire is n-type doped.
- The provision of diode junctions can eliminate the problem of cross talk in crossbar arrays.
FIG. 9A shows an example of a 2×2 array in which bit [21] is off. Thus, a direct conducting path between bit [21] and bit [11] is not acceptable. Because there is no restriction on a direction for a conduction pathway, a pathway as represented bybold line 250 can circumvent the [21]/[11] pathway. This will cause bit [21] to appear on even though it is off.FIG. 9B shows a result of rectifying behavior when one set of crossed wires comprises a semiconductor and the other set of crossed wires comprises a metallic conductor. Conducting is limited to one direction only and cross talk is thus prevented. - As mentioned previously, providing pure semiconductor nanotubes or metallic nanotubes has not been possible to this point. Thus, another aspect of the present invention provides a method involving a mixture of metallic nanotubes and semiconducting nanotubes. The method involves separating the metallic nanotubes from the semiconducting nanotubes. It is known that metallic nanotubes have a greater polarizability than semiconducting nanotubes by about three orders of magnitude. Thus, in one embodiment, the step of separating the mixture involves subjecting the mixture to an electric field of intensity sufficient to selectively orient metallic nanotubes. Depending on the intensity of electric field, there is a critical length below which only metallic nanotubes will be aligned. Thus, the intensity can be adjusted to be in accord with a field below the critical length. Above this critical length, both types of nanotubes can be aligned by the field. Below this length, the electric field is of an intensity such that the semiconducting nanotubes remain unoriented with respect to the electric field. Once selective alignment is achieved, separation is routine.
- As noted above, it is a significant advantage of the invention that junction elements can be switched between “on” and “off” states remotely, i.e., by simply addressing at least one end of each of the wires that cross to form the memory element (
wires FIGS. 2 and 4 ). Where the junction elements comprises memory elements, or diodes, some or preferably all of the memory elements are free of auxiliary circuitry defining the memory or diode elements and free of auxiliary circuitry addressing the memory or diode elements to switch them between states; the memory or diode element simply includeswires - One feature of the invention is that, with reference to
FIG. 2 , nanoscopic-scale wires FIGS. 4 and 5 , memory elements of the invention each include one wire (wire 18 inFIGS. 4 and 5 ) that need not move during switching, and can be made of essentially any material having appropriate conductivity that can be formed in the appropriate dimensions. Although nanotubes and other nanoscopic wires can be used for fixedwires 18, wires formed by more conventional techniques such as lithography can be used as well.Wire 30 should be selected to meet the additional requirement of repeated flexure during switching between “off” and “on” states, as illustrated.Wire 30 should thus be selected to have elasticity and robustness to meet this demand. Nanotubes exhibit such robustness and are ideal for use as flexingwires 30 in the invention. Thus, devices of the invention can be constructed entirely by directed assembly of pre-formed wires onto a surface or entirely from directed growth of wires at a surface, or a combination, or fixedwires 18 can first be formed via a conventional technique such as lithography followed by placement of flexingwires 30 by directed assembly, or directed growth. - Referring now to
FIG. 7 , a cut away schematic illustration of acrossbar array 80 of the invention is presented.Array 80 includes a series of parallel, equally-spaced wires 82, 84, 86, 88 . . . , and a series of parallel, equally-spacedwires electrode wires electrode wires FIG. 7 ), but this is optional. Each of wires 82, 84, 86 . . . crosses each ofwires FIGS. 2, 4 , and 5 and discussed above. For example,junction 160 is a memory element defining the intersection ofwires 88 and 104. Whendevice 80 is constructed of memory elements as illustrated inarrangement 28 ofFIG. 2 , and inFIG. 4 , atmechanical equilibrium wires 88 and 104 are free of contact andelement 160 is “off”.Biasing electrodes wires 88 and 104, atjunction 160, into contact with each other (stable Van der Waals contact) andjunction 160 is switched “on”. Bias need not be maintained betweenelectrodes element 160 in the “on” state in preferred embodiments. To switchelement 160 “off”,electrodes wires 88 and 104 from each other atjunction 160. Wheredevice 80 includes junctions as illustrated inarrangement 26 ofFIG. 2 andFIG. 5 , atmechanical equilibrium junction 160 is in the “on” state withwires 88 and 104 contacting each other, andelement 160 is switched “off” by biasingelectrodes Switching element 160 back “on” is accomplished by biasingelectrodes - Another aspect of the present invention provides an article comprising an electrical crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched irreversibly between at least two readable states. Thus, the device is “read-only”. In another embodiment, the article comprises an electrical crossbar array comprising at least two crossed nanoscopic wires defining a memory element capable of being switched reversibly. Thus, the devices can be used for a volatile RAM (e.g. require a power supply to keep the stored information) or a non-volatile RAM.
- To quantify the bistability and switching behavior of the device element a total energy, ET, can be calculated:
E T =E vdw +E elas +E elec (1)
where Evdw is the van der Waals (vdW) energy, Eelas is the elastic energy and Eelec is the electrostatic energy for the device. The first two terms in (1), which define the static potential, can be evaluated to assess the range of parameters that yield bistable devices.FIG. 11 shows plots of energy, ET=EvdW+Eelas, for a single 20 nm device as a function of separation at the junction. The series of curves correspond to initial separations of 0.8, 1.0, 1.2, 1.4, 1.6, 1.8, 2.0, 2.2, 2.4 nm for carbon nanotubes, with two well-defined minima observed for initial separations of 1.0 to 2.0 nm. These minima correspond to the crossing nanotubes being separated (2.4 nm) and in vdW contact (0.8 nm). The vdW interaction between nanotubes can be calculated by pairwise summation of a Lennard-Jones potential that has been shown previously to provide good agreement with experiment for fullerene and nanotube systems. The elastic contribution to the total energy can be determined using a beam mechanics model:
where B is the product of the nanotube elastic modulus and geometric moment of inertia, k is the elastic modulus of the support, L is the length of the suspended nanotube,
and δz is the displacement of the suspended tube from its unstrained position. These calculations show that the proposed SWNT device structure exhibits bistablility for a broad range of parameters (FIG. 11 ). For example, a 20 nm device inFIG. 11 exhibits room temperature stable (i.e., barrier >>10kBT) on and off states for initial separations ranging from 1.0 to 2.2 nm. The calculated structures of the SWNT device element in the off state and on state for an initial separation of 2 nm (FIG. 12 ) highlight the relatively minor distortion of the upper SWNT in the on state, even when the initial separation is near the upper limit for bistability. Si support structures (elastic modulus of 16 GPa) are not shown for clarity. These calculations also show that the potential is bistable for a wide range of device sizes when the upper nanotube is supported on either hard materials, such as silicon (FIG. 13 ) or soft organic (FIG. 14 ) materials.FIG. 14 shows calculations on an organic layer having an elastic modulus of 12 GPa. InFIGS. 13 and 14 , the range of initial separations yielding bistable devices is shown in gray. Importantly, soft supports enable bistability for smaller devices. Both types of materials can be used for device fabrication. In general, the bistable region increases with device size, and the softer organic support yields a larger range of bistability especially in the smallest structures. The calculations were 15 carried out for (10,10) SWNTs with an elastic modulus of 1 TPa, and Lennard-Jones parameters of C6=32.00×10−60 erg cm6 and C12=55.77×10−105 erg cm12. - There are several important points that can be drawn from these calculations. Foremost, is the wide range of parameters that yield a bistable potential for the device configuration. The robustness of the on/off states suggests strongly that this architecture will be tolerant of variations in structure that inevitably arise during fabrication by, for example, self assembly. Second, the differences in separation between nanotubes in the on and off states will produce large differences in resistance (i.e., I˜exp(−kd), where I is the current, k is a decay constant of
order 2 Å−1 and d is the tube-tube separation in angstroms), and thus should enable reliable reading of the on/off states independent of variations in cross contact resistance. Third, the range of mechanical strains required to achieve bistability inFIG. 11 , 0.22-1.7%, is well below the elastic limit of at least 6% determined computationally and experimentally for SWNTs, and the average bending angle in the on state is ca. ½ that required to buckle nanotubes. Hence, these device elements can be robust as required for a reliable molecular scale computer. Comparison of the calculated strain energies to values of the nanotube-surface interaction and friction suggests that (i) the lower nanotube remains fixed on the substrate, and (ii) the suspended nanotubes do not lift off or slip on supports on the order of 10 nm when the suspended tube is deflected to the on state. The interaction with the support could also be enhanced through chemical modification. - The effectiveness of switching the suspended nanotube devices between on and off states has been assessed by evaluating the voltage-dependent contribution of the electrostatic energy to the total energy. In this calculation, the boundary element method was used to numerically solve the Laplace equation for the complex three-dimensional geometry of the crossed nanotube device. Calculations of ET for switching a 20 nm device on and off (
FIG. 15 ) demonstrate that it is possible to change reversibly between the on/off states using moderate voltages, which do not exceed the threshold field for nanotube failure. The switching voltages vary depending on the specific device geometry (i.e., shape of the static potential), and thus can be further optimized. For example, by using a thinner dielectric layer (that is, 4vs 20 nm SiO2) the on and off switching thresholds can be reduced from 4.5 and 20 V to 3 and 5 V, respectively. The calculations also show that the electrostatic forces between adjacent nanotubes are insufficient to distort an array of elements, even at a 10 nm device scale, because most of the electrostatic interaction is localized in the small crossing region of the individual elements. - This example provides a demonstration of electrostatic switching of the nanotube device.
FIG. 15 shows plots of the energy, ET=EvdW+Eelas+Eelectro, as a function of separation at the junction for switching on (FIG. 15A ) and switching off (FIG. 15B ). InFIG. 15A , the plots (i), (ii) and (iii) correspond to ET for V1=V2=0 V, V1=+3; V2=−3 V and V1=+4.5; V2=−4.5 V, respectively, where V1 and V2 are the potentials applied to the two crossing nanotubes. InFIG. 15B , (i), (ii) and (iii) correspond to V1=V2=0 V, V1=V2=+15 V and V1=V2=+20 V, respectively. These potentials are applied with respect to the conducting ground plane (e.g.,FIG. 1A ). The minimum magnitudes of the voltages required for switching on and off are 4.5 V and 20 V, respectively. The electrostatic energy was calculated by numerically solving the Laplace equation using the boundary element method with 3600 elements for a 20 nm device supported on Si with a 1.4 nm initial separation. The calculated electrostatic potential satisfied the boundary conditions and asymptotic behavior. - Administration of reversible switching and the ability of the device to function as a non-volatile RAM is provided in this Example. Properties of suspended, crossed nanotube devices made from SWNT ropes were studied by mechanical manipulation (
FIG. 16 ). Current-voltage (I-V) measurements made on the lower and upper nanotubes of a typical model device show ohmic behavior with resistances of 11 and 58 kΩ, respectively (FIG. 16A ). The I-V curves between the upper and lower ropes in the off state were nonlinear, which is consistent with tunneling, with a resistance on the order of a GΩ. After switching on, the I-V curves exhibited ohmic behavior with a resistance of 112 kΩ (FIG. 16B ). This large change in resistance is consistent with our predictions for off vs. on states in the suspended device architecture. Reversible switching between well-defined on/off states has also been observed in devices (FIG. 17 ). The smaller change in on/offresistances for the device inFIG. 17 is believed to arise from large contact resistances that are sometimes observed with nanotube ropes. Nevertheless, this change between on/off states is 10-fold, and was persistent. Lastly, it has been found that some of the devices fabricated from ropes could only be switched on for reasonable applied voltages. This behavior is expected for potentials that have deep vdW minima (e.g.,FIG. 11 ). Irreversible switching can be exploited to configure logic elements for computing. - Those skilled in the art would readily appreciate that all parameters listed herein are meant to be exemplary and that actual parameters will depend upon the specific application for which the methods and apparatus of the present invention are used. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, the invention may be practiced otherwise than as specifically described.
Claims (19)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/540,148 US20070161237A1 (en) | 1999-07-02 | 2006-09-29 | Nanoscopic wired-based devices and arrays |
US15/438,220 USRE47513E1 (en) | 2003-08-08 | 2017-02-21 | Packaged ready-to-use product |
US16/421,115 USRE48426E1 (en) | 2003-08-08 | 2019-05-23 | Packaged ready-to-use product |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14221699P | 1999-07-02 | 1999-07-02 | |
PCT/US2000/018138 WO2001003208A1 (en) | 1999-07-02 | 2000-06-30 | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
US10/033,369 US6781166B2 (en) | 1999-07-02 | 2001-10-24 | Nanoscopic wire-based devices and arrays |
US10/812,653 US8178907B2 (en) | 1999-07-02 | 2004-03-29 | Nanoscopic wire-based electrical crossbar memory-devices and arrays |
US11/540,148 US20070161237A1 (en) | 1999-07-02 | 2006-09-29 | Nanoscopic wired-based devices and arrays |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/812,653 Continuation US8178907B2 (en) | 1999-07-02 | 2004-03-29 | Nanoscopic wire-based electrical crossbar memory-devices and arrays |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070161237A1 true US20070161237A1 (en) | 2007-07-12 |
Family
ID=22499021
Family Applications (11)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/033,369 Expired - Lifetime US6781166B2 (en) | 1999-07-02 | 2001-10-24 | Nanoscopic wire-based devices and arrays |
US10/812,653 Expired - Fee Related US8178907B2 (en) | 1999-07-02 | 2004-03-29 | Nanoscopic wire-based electrical crossbar memory-devices and arrays |
US10/973,665 Abandoned US20050117441A1 (en) | 1999-07-02 | 2004-10-26 | Nanoscopic wire-based devices and arrays |
US11/284,350 Abandoned US20060237749A1 (en) | 1999-07-02 | 2005-11-21 | Nanoscopic wire-based devices and arrays |
US11/283,631 Expired - Lifetime US7399691B2 (en) | 1999-07-02 | 2005-11-21 | Methods of forming nanoscopic wire-based devices and arrays |
US11/313,096 Expired - Lifetime US7172953B2 (en) | 1999-07-02 | 2005-12-20 | Methods of forming nanoscopic wire-based devices and arrays |
US11/485,893 Abandoned US20110174619A1 (en) | 1999-07-02 | 2006-07-13 | Nonoscopic wired-based devices and arrays |
US11/540,148 Abandoned US20070161237A1 (en) | 1999-07-02 | 2006-09-29 | Nanoscopic wired-based devices and arrays |
US11/592,809 Abandoned US20070045667A1 (en) | 1999-07-02 | 2006-11-03 | Nanoscopic wired-based devices and arrays |
US11/890,366 Abandoned US20070272951A1 (en) | 1999-07-02 | 2007-08-06 | Nanoscopic wire-based devices and arrays |
US13/444,334 Expired - Fee Related US8471298B2 (en) | 1999-07-02 | 2012-04-11 | Nanoscopic wire-based devices and arrays |
Family Applications Before (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/033,369 Expired - Lifetime US6781166B2 (en) | 1999-07-02 | 2001-10-24 | Nanoscopic wire-based devices and arrays |
US10/812,653 Expired - Fee Related US8178907B2 (en) | 1999-07-02 | 2004-03-29 | Nanoscopic wire-based electrical crossbar memory-devices and arrays |
US10/973,665 Abandoned US20050117441A1 (en) | 1999-07-02 | 2004-10-26 | Nanoscopic wire-based devices and arrays |
US11/284,350 Abandoned US20060237749A1 (en) | 1999-07-02 | 2005-11-21 | Nanoscopic wire-based devices and arrays |
US11/283,631 Expired - Lifetime US7399691B2 (en) | 1999-07-02 | 2005-11-21 | Methods of forming nanoscopic wire-based devices and arrays |
US11/313,096 Expired - Lifetime US7172953B2 (en) | 1999-07-02 | 2005-12-20 | Methods of forming nanoscopic wire-based devices and arrays |
US11/485,893 Abandoned US20110174619A1 (en) | 1999-07-02 | 2006-07-13 | Nonoscopic wired-based devices and arrays |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/592,809 Abandoned US20070045667A1 (en) | 1999-07-02 | 2006-11-03 | Nanoscopic wired-based devices and arrays |
US11/890,366 Abandoned US20070272951A1 (en) | 1999-07-02 | 2007-08-06 | Nanoscopic wire-based devices and arrays |
US13/444,334 Expired - Fee Related US8471298B2 (en) | 1999-07-02 | 2012-04-11 | Nanoscopic wire-based devices and arrays |
Country Status (8)
Country | Link |
---|---|
US (11) | US6781166B2 (en) |
EP (3) | EP1194960B1 (en) |
JP (2) | JP2003504857A (en) |
AT (1) | ATE481745T1 (en) |
AU (1) | AU782000B2 (en) |
CA (1) | CA2372707C (en) |
DE (1) | DE60044972D1 (en) |
WO (1) | WO2001003208A1 (en) |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040188721A1 (en) * | 1999-07-02 | 2004-09-30 | President And Fellows Of Harvard University | Nanoscopic wired-based devices and arrays |
US20070217519A1 (en) * | 2006-03-01 | 2007-09-20 | Mitsubishi Electric Corporation | Moving image decoding apparatus and moving image coding apparatus |
US20080176767A1 (en) * | 2007-01-24 | 2008-07-24 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US20090200646A1 (en) * | 2008-02-13 | 2009-08-13 | Millward Dan B | One-Dimensional Arrays of Block Copolymer Cylinders and Applications Thereof |
US20090263628A1 (en) * | 2008-04-21 | 2009-10-22 | Millward Dan B | Multi-Layer Method for Formation of Registered Arrays of Cylindrical Pores in Polymer Films |
US20090274887A1 (en) * | 2008-05-02 | 2009-11-05 | Millward Dan B | Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders |
US20100124096A1 (en) * | 2008-11-18 | 2010-05-20 | Kabushiki Kaisha Toshiba | Electric element, switching element, memory element, switching method and memory method |
US20100279062A1 (en) * | 2007-06-12 | 2010-11-04 | Millward Dan B | Alternating Self-Assembling Morphologies of Diblock Copolymers Controlled by Variations in Surfaces |
US7968474B2 (en) | 2006-11-09 | 2011-06-28 | Nanosys, Inc. | Methods for nanowire alignment and deposition |
EP2395543A1 (en) | 2010-06-09 | 2011-12-14 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Method for manufacturing a grid of conductive lines with crossed access |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8083953B2 (en) | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8450418B2 (en) | 2010-08-20 | 2013-05-28 | Micron Technology, Inc. | Methods of forming block copolymers, and block copolymer compositions |
US8551808B2 (en) | 2007-06-21 | 2013-10-08 | Micron Technology, Inc. | Methods of patterning a substrate including multilayer antireflection coatings |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US8669645B2 (en) | 2008-10-28 | 2014-03-11 | Micron Technology, Inc. | Semiconductor structures including polymer material permeated with metal oxide |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US8956713B2 (en) | 2007-04-18 | 2015-02-17 | Micron Technology, Inc. | Methods of forming a stamp and a stamp |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9390951B2 (en) | 2009-05-26 | 2016-07-12 | Sharp Kabushiki Kaisha | Methods and systems for electric field deposition of nanowires and other devices |
Families Citing this family (392)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US6346189B1 (en) * | 1998-08-14 | 2002-02-12 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube structures made using catalyst islands |
WO2001057917A2 (en) * | 2000-02-07 | 2001-08-09 | Xidex Corporation | System and method for fabricating logic devices comprising carbon nanotube transistors |
AU2001249323A1 (en) * | 2000-03-22 | 2001-10-03 | University Of Massachusetts | Nanocylinder arrays |
US6645432B1 (en) | 2000-05-25 | 2003-11-11 | President & Fellows Of Harvard College | Microfluidic systems including three-dimensionally arrayed channel networks |
US6686184B1 (en) | 2000-05-25 | 2004-02-03 | President And Fellows Of Harvard College | Patterning of surfaces utilizing microfluidic stamps including three-dimensionally arrayed channel networks |
US7323143B2 (en) | 2000-05-25 | 2008-01-29 | President And Fellows Of Harvard College | Microfluidic systems including three-dimensionally arrayed channel networks |
DE10032412A1 (en) * | 2000-07-04 | 2002-01-24 | Infineon Technologies Ag | Electronic storage element used in CMOS technology comprises carbon nanotubes arranged skew to each other or crossing each other so that an electrical coupling is produced between the tubes |
EP1170799A3 (en) | 2000-07-04 | 2009-04-01 | Infineon Technologies AG | Electronic device and method of manufacture of an electronic device |
DE10034315C2 (en) * | 2000-07-14 | 2002-11-28 | Infineon Technologies Ag | Analog to digital converter |
DE10038124B4 (en) * | 2000-08-04 | 2006-05-11 | Infineon Technologies Ag | Use of a multi-walled nanotube on a substrate and as an electronic component |
US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
EP1314189B1 (en) | 2000-08-22 | 2013-02-27 | President and Fellows of Harvard College | Electrical device comprising doped semiconductor nanowires and method for its production |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
EP1736760A3 (en) | 2000-12-11 | 2008-06-18 | President And Fellows Of Harvard College | Nanosensors |
KR100991573B1 (en) | 2000-12-11 | 2010-11-04 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | Nanosensors |
US7250147B2 (en) | 2001-01-29 | 2007-07-31 | Tour James M | Process for derivatizing carbon nanotubes with diazonium species |
GB2412370B (en) * | 2001-01-29 | 2005-11-09 | Univ Rice William M | Process for derivatizing carbon nanotubes with diazonium species and compositions thereof |
US6593666B1 (en) | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
CA2454272C (en) * | 2001-07-20 | 2010-03-30 | President And Fellows Of Harvard College | Transition metal oxide nanowires, and devices incorporating them |
WO2004065657A1 (en) * | 2003-01-13 | 2004-08-05 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US6919592B2 (en) * | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US7563711B1 (en) | 2001-07-25 | 2009-07-21 | Nantero, Inc. | Method of forming a carbon nanotube-based contact to semiconductor |
US6911682B2 (en) * | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6643165B2 (en) * | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US7795388B2 (en) * | 2001-11-08 | 2010-09-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) | Versatile platform for nanotechnology based on circular permutations of chaperonin protein |
AU2002367818A1 (en) * | 2001-11-08 | 2003-10-08 | United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) | Ordered biological nanostructures formed from chaperonin polypeptides |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
SE0104452D0 (en) * | 2001-12-28 | 2001-12-28 | Forskarpatent I Vaest Ab | Method for producing nanostructures in-situ, and in-situ prepared nanostructures |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
DE60230110D1 (en) | 2002-02-25 | 2009-01-15 | St Microelectronics Srl | Optically readable molecular memory fabricated using carbon nanotubes and methods for storing information in this molecular memory |
AU2003225839A1 (en) | 2002-03-15 | 2003-09-29 | Nanomix. Inc. | Modification of selectivity for sensing for nanostructure device arrays |
US7312095B1 (en) | 2002-03-15 | 2007-12-25 | Nanomix, Inc. | Modification of selectivity for sensing for nanostructure sensing device arrays |
SE0200868D0 (en) * | 2002-03-20 | 2002-03-20 | Chalmers Technology Licensing | Theoretical model for a nanorelay and same relay |
US7147894B2 (en) * | 2002-03-25 | 2006-12-12 | The University Of North Carolina At Chapel Hill | Method for assembling nano objects |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US6831017B1 (en) | 2002-04-05 | 2004-12-14 | Integrated Nanosystems, Inc. | Catalyst patterning for nanowire devices |
JP4051988B2 (en) * | 2002-04-09 | 2008-02-27 | 富士ゼロックス株式会社 | Photoelectric conversion element and photoelectric conversion device |
US7335395B2 (en) * | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US20040067530A1 (en) * | 2002-05-08 | 2004-04-08 | The Regents Of The University Of California | Electronic sensing of biomolecular processes |
US6548313B1 (en) * | 2002-05-31 | 2003-04-15 | Intel Corporation | Amorphous carbon insulation and carbon nanotube wires |
EP1537605A4 (en) * | 2002-06-19 | 2008-03-05 | Nantero Inc | Nanotube permeable base transistor and method of making same |
JP4635410B2 (en) * | 2002-07-02 | 2011-02-23 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
JP3969228B2 (en) * | 2002-07-19 | 2007-09-05 | 松下電工株式会社 | Mechanical deformation detection sensor, acceleration sensor using the same, and pressure sensor |
AU2003261205A1 (en) | 2002-07-19 | 2004-02-09 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
DE60212118T2 (en) * | 2002-08-08 | 2007-01-04 | Sony Deutschland Gmbh | Method for producing a crossbar structure of nanowires |
US7098056B2 (en) * | 2002-08-09 | 2006-08-29 | Nanoink, Inc. | Apparatus, materials, and methods for fabrication and catalysis |
WO2004027822A2 (en) | 2002-09-05 | 2004-04-01 | Nanosys, Inc. | Oriented nanostructures and methods of preparing |
US7619562B2 (en) * | 2002-09-30 | 2009-11-17 | Nanosys, Inc. | Phased array systems |
TWI354261B (en) | 2002-09-30 | 2011-12-11 | Nanosys Inc | Integrated displays using nanowire transistors |
EP2218681A2 (en) | 2002-09-30 | 2010-08-18 | Nanosys, Inc. Et AL. | Applications of Nano-Enabled Large Area Macroelectronic Substrates Incorporating Nanowires and Nanowire Composites |
JP5336031B2 (en) | 2002-09-30 | 2013-11-06 | ナノシス・インク. | Large area nano-capable macroelectronic substrate and its use |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
KR100937085B1 (en) * | 2002-10-26 | 2010-01-15 | 삼성전자주식회사 | Layering and Patterning Method for Carbon Nanotubes Using Chemical Self Assembly |
US20040126802A1 (en) * | 2002-12-12 | 2004-07-01 | Affymetrix, Inc. | Nanotube-based microarrays |
US20040200734A1 (en) * | 2002-12-19 | 2004-10-14 | Co Man Sung | Nanotube-based sensors for biomolecules |
US6936496B2 (en) * | 2002-12-20 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Nanowire filament |
CA2512387A1 (en) * | 2003-01-13 | 2004-08-05 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US9574290B2 (en) | 2003-01-13 | 2017-02-21 | Nantero Inc. | Methods for arranging nanotube elements within nanotube fabrics and films |
US8937575B2 (en) | 2009-07-31 | 2015-01-20 | Nantero Inc. | Microstrip antenna elements and arrays comprising a shaped nanotube fabric layer and integrated two terminal nanotube select devices |
US7560136B2 (en) * | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
WO2004072334A2 (en) | 2003-02-12 | 2004-08-26 | Nantero, Inc. | Nanofabric articles and methods of making the same |
KR101045507B1 (en) * | 2003-03-18 | 2011-06-30 | 스미토모 덴키 고교 가부시키가이샤 | Light emitting element mounting member, and semiconductor device using the same |
US7113426B2 (en) | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
CA2520661A1 (en) | 2003-03-28 | 2004-10-14 | Nantero, Inc. | Nanotube-on-gate fet structures and applications |
US7075141B2 (en) | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
US6944054B2 (en) | 2003-03-28 | 2005-09-13 | Nantero, Inc. | NRAM bit selectable two-device nanotube array |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
WO2004087564A1 (en) | 2003-04-04 | 2004-10-14 | Startskottet 22286 Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
US7432522B2 (en) | 2003-04-04 | 2008-10-07 | Qunano Ab | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
US7045421B2 (en) | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
US6995046B2 (en) | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
EP1631812A4 (en) | 2003-05-14 | 2010-12-01 | Nantero Inc | Sensor platform using a horizontally oriented nanotube element |
GB0311826D0 (en) * | 2003-05-22 | 2003-06-25 | Queen Mary & Westfield College | Particle separation apparatus and method |
US7199498B2 (en) * | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
US7148579B2 (en) | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
US20040238907A1 (en) | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
US7095645B2 (en) | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
US7910064B2 (en) | 2003-06-03 | 2011-03-22 | Nanosys, Inc. | Nanowire-based sensor configurations |
US7274064B2 (en) | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
CA2528804A1 (en) * | 2003-06-09 | 2005-01-06 | Nantero, Inc | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
US7005335B2 (en) * | 2003-07-15 | 2006-02-28 | Hewlett-Packard Development, L.P. | Array of nanoscopic mosfet transistors and fabrication methods |
JP2007500669A (en) * | 2003-07-29 | 2007-01-18 | ウィリアム・マーシュ・ライス・ユニバーシティ | Selective functionalization of carbon nanotubes |
JP2007501525A (en) | 2003-08-04 | 2007-01-25 | ナノシス・インコーポレイテッド | Nanowire composites and systems and methods for making electronic substrates derived therefrom |
US7289357B2 (en) | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
CN101562049B (en) | 2003-08-13 | 2012-09-05 | 南泰若股份有限公司 | Nanotube-based switching elements with multiple controls and circuits made thereof |
US7583526B2 (en) | 2003-08-13 | 2009-09-01 | Nantero, Inc. | Random access memory including nanotube switching elements |
WO2005017967A2 (en) | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
US7115960B2 (en) | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
CA2535634A1 (en) | 2003-08-13 | 2005-05-26 | Nantero, Inc | Nanotube-based switching elements with multiple controls and circuits made from same |
US7416993B2 (en) | 2003-09-08 | 2008-08-26 | Nantero, Inc. | Patterned nanowire articles on a substrate and methods of making the same |
US7235159B2 (en) * | 2003-09-17 | 2007-06-26 | Molecular Nanosystems, Inc. | Methods for producing and using catalytic substrates for carbon nanotube growth |
US20050214197A1 (en) * | 2003-09-17 | 2005-09-29 | Molecular Nanosystems, Inc. | Methods for producing and using catalytic substrates for carbon nanotube growth |
US7223611B2 (en) * | 2003-10-07 | 2007-05-29 | Hewlett-Packard Development Company, L.P. | Fabrication of nanowires |
US7132298B2 (en) | 2003-10-07 | 2006-11-07 | Hewlett-Packard Development Company, L.P. | Fabrication of nano-object array |
WO2005072089A2 (en) * | 2003-12-11 | 2005-08-11 | The Penn State Research Foundation | Controlled nanowire in permanent integrated nano-templates and method of fabricating sensor and transducer structures |
US7923109B2 (en) | 2004-01-05 | 2011-04-12 | Board Of Regents, The University Of Texas System | Inorganic nanowires |
US7645397B2 (en) * | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
JP4789809B2 (en) * | 2004-01-15 | 2011-10-12 | サムスン エレクトロニクス カンパニー リミテッド | Matrix doped with nanocrystals |
US7034332B2 (en) * | 2004-01-27 | 2006-04-25 | Hewlett-Packard Development Company, L.P. | Nanometer-scale memory device utilizing self-aligned rectifying elements and method of making |
US7553371B2 (en) * | 2004-02-02 | 2009-06-30 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US20110039690A1 (en) * | 2004-02-02 | 2011-02-17 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US8025960B2 (en) * | 2004-02-02 | 2011-09-27 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US7354850B2 (en) | 2004-02-06 | 2008-04-08 | Qunano Ab | Directionally controlled growth of nanowhiskers |
US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
US20090227107A9 (en) * | 2004-02-13 | 2009-09-10 | President And Fellows Of Havard College | Nanostructures Containing Metal Semiconductor Compounds |
US7595528B2 (en) | 2004-03-10 | 2009-09-29 | Nanosys, Inc. | Nano-enabled memory devices and anisotropic charge carrying arrays |
EP1723676A4 (en) | 2004-03-10 | 2009-04-15 | Nanosys Inc | Nano-enabled memory devices and anisotropic charge carrying arrays |
US7115971B2 (en) | 2004-03-23 | 2006-10-03 | Nanosys, Inc. | Nanowire varactor diode and methods of making same |
DE112005000688T5 (en) * | 2004-03-26 | 2007-03-22 | Forster-Miller, Inc., Waltham | Electronic components manufactured by carbon nanotube-based electrolytic deposition and applications thereof |
US7407738B2 (en) * | 2004-04-02 | 2008-08-05 | Pavel Kornilovich | Fabrication and use of superlattice |
US7727820B2 (en) * | 2004-04-30 | 2010-06-01 | Hewlett-Packard Development Company, L.P. | Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures |
US7247531B2 (en) * | 2004-04-30 | 2007-07-24 | Hewlett-Packard Development Company, L.P. | Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same |
US7683435B2 (en) * | 2004-04-30 | 2010-03-23 | Hewlett-Packard Development Company, L.P. | Misalignment-tolerant multiplexing/demultiplexing architectures |
US20050241959A1 (en) * | 2004-04-30 | 2005-11-03 | Kenneth Ward | Chemical-sensing devices |
US7785922B2 (en) | 2004-04-30 | 2010-08-31 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US20050279274A1 (en) * | 2004-04-30 | 2005-12-22 | Chunming Niu | Systems and methods for nanowire growth and manufacturing |
US7105428B2 (en) | 2004-04-30 | 2006-09-12 | Nanosys, Inc. | Systems and methods for nanowire growth and harvesting |
US7203789B2 (en) * | 2004-05-10 | 2007-04-10 | Hewlett-Packard Development Company, L.P. | Architecture and methods for computing with reconfigurable resistor crossbars |
EP1751765A4 (en) * | 2004-05-24 | 2009-05-20 | Univ Boston | Controllable nanomechanical memory element |
AU2005253604B2 (en) * | 2004-06-08 | 2011-09-08 | Scandisk Corporation | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8088483B1 (en) | 2004-06-08 | 2012-01-03 | Nanosys, Inc. | Process for group 10 metal nanostructure synthesis and compositions made using same |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
TWI406890B (en) | 2004-06-08 | 2013-09-01 | Sandisk Corp | Post-deposition encapsulation of nanostructures : compositions, devices and systems incorporating same |
US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US20070264623A1 (en) * | 2004-06-15 | 2007-11-15 | President And Fellows Of Harvard College | Nanosensors |
US7652342B2 (en) | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
US7161403B2 (en) | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US7167026B2 (en) * | 2004-06-18 | 2007-01-23 | Nantero, Inc. | Tri-state circuit using nanotube switching elements |
US7330709B2 (en) | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and logic |
US7164744B2 (en) | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
US7329931B2 (en) | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and transistors |
US7288970B2 (en) | 2004-06-18 | 2007-10-30 | Nantero, Inc. | Integrated nanotube and field effect switching device |
US7385295B2 (en) * | 2004-06-24 | 2008-06-10 | California Institute Of Technology | Fabrication of nano-gap electrode arrays by the construction and selective chemical etching of nano-crosswire stacks |
US7528002B2 (en) | 2004-06-25 | 2009-05-05 | Qunano Ab | Formation of nanowhiskers on a substrate of dissimilar material |
CN1985316A (en) * | 2004-07-06 | 2007-06-20 | 皇家飞利浦电子股份有限公司 | Optical head with a variable optical component |
CA2572798A1 (en) | 2004-07-07 | 2006-07-27 | Nanosys, Inc. | Systems and methods for harvesting and integrating nanowires |
JP2008506548A (en) * | 2004-07-19 | 2008-03-06 | アンビエント システムズ, インコーポレイテッド | Nanoscale electrostatic and electromagnetic motors and generators |
US20060024814A1 (en) * | 2004-07-29 | 2006-02-02 | Peters Kevin F | Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same |
US7189455B2 (en) * | 2004-08-02 | 2007-03-13 | The Research Foundation Of State University Of New York | Fused carbon nanotube-nanocrystal heterostructures and methods of making the same |
US6955937B1 (en) | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
JP4556557B2 (en) * | 2004-08-25 | 2010-10-06 | パナソニック電工株式会社 | Method for producing carbon nanotube |
JP4213680B2 (en) | 2004-08-31 | 2009-01-21 | 富士通株式会社 | Substrate structure and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
WO2006025391A1 (en) * | 2004-08-31 | 2006-03-09 | Kyoto University | Molecular device and method for manufacturing the same |
US7365395B2 (en) | 2004-09-16 | 2008-04-29 | Nanosys, Inc. | Artificial dielectrics using nanostructures |
TWI399864B (en) | 2004-09-16 | 2013-06-21 | Nantero Inc | Light emitters using nanotubes and methods of making same |
US8558311B2 (en) | 2004-09-16 | 2013-10-15 | Nanosys, Inc. | Dielectrics using substantially longitudinally oriented insulated conductive wires |
WO2006132658A2 (en) | 2004-09-21 | 2006-12-14 | Nantero, Inc. | Resistive elements using carbon nanotubes |
WO2006132657A2 (en) * | 2004-09-22 | 2006-12-14 | Applera Corporation | Enzyme assay with nanowire sensor |
JP2008515654A (en) * | 2004-10-12 | 2008-05-15 | ナノシス・インク. | Fully integrated organic layer process for manufacturing plastic electronic components based on conducting polymers and semiconductor nanowires |
US7473943B2 (en) | 2004-10-15 | 2009-01-06 | Nanosys, Inc. | Gate configuration for nanowire electronic devices |
CN100557813C (en) | 2004-10-18 | 2009-11-04 | 株式会社半导体能源研究所 | Semiconductor device and driving method thereof |
US7567414B2 (en) | 2004-11-02 | 2009-07-28 | Nantero, Inc. | Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches |
US20100147657A1 (en) * | 2004-11-02 | 2010-06-17 | Nantero, Inc. | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
WO2006052891A1 (en) * | 2004-11-09 | 2006-05-18 | The Regents Of The University Of California | Analyte identification using electronic devices |
US20080044775A1 (en) * | 2004-11-12 | 2008-02-21 | Seung-Hun Hong | Method for Aligning or Assembling Nano-Structure on Solid Surface |
US20080296558A1 (en) * | 2004-11-12 | 2008-12-04 | The Florida International University Board Of Trus | Method of Synthesizing Y-Junction Single-Walled Carbon Nanotubes and Products Formed Thereby |
CN101263078B (en) | 2004-11-24 | 2012-12-26 | 奈米系统股份有限公司 | Contact doping and annealing systems and processes for nanowire thin films |
US7348592B2 (en) * | 2004-11-29 | 2008-03-25 | The United States Of America As Represented By The Secretary Of The Navy | Carbon nanotube apparatus and method of carbon nanotube modification |
US7560366B1 (en) | 2004-12-02 | 2009-07-14 | Nanosys, Inc. | Nanowire horizontal growth and substrate removal |
KR20070101857A (en) | 2004-12-06 | 2007-10-17 | 더 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | Nanoscale wire-based data storage |
US8278011B2 (en) | 2004-12-09 | 2012-10-02 | Nanosys, Inc. | Nanostructured catalyst supports |
US7842432B2 (en) * | 2004-12-09 | 2010-11-30 | Nanosys, Inc. | Nanowire structures comprising carbon |
CN102593466A (en) * | 2004-12-09 | 2012-07-18 | 奈米系统股份有限公司 | Nanowire-based membrane electrode assemblies for fuel cells |
US7939218B2 (en) * | 2004-12-09 | 2011-05-10 | Nanosys, Inc. | Nanowire structures comprising carbon |
US7340356B2 (en) * | 2004-12-13 | 2008-03-04 | Hewlett-Packard Development Company, L.P. | Method and system for reading the resistance state of junctions in crossbar memory |
US8120014B2 (en) * | 2004-12-15 | 2012-02-21 | Drexel University | Nanowire based plasmonics |
US7359694B2 (en) * | 2004-12-16 | 2008-04-15 | Northrop Grumman Corporation | Carbon nanotube devices and method of fabricating the same |
EP1825038B1 (en) | 2004-12-16 | 2012-09-12 | Nantero, Inc. | Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof |
US8548415B2 (en) | 2004-12-16 | 2013-10-01 | Northrop Grumman Systems Corporation | Carbon nanotube devices and method of fabricating the same |
JP2008525204A (en) * | 2004-12-23 | 2008-07-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Nanofabrication based on SAM growth |
US20060141678A1 (en) * | 2004-12-29 | 2006-06-29 | Stephen Montgomery | Forming a nanotube switch and structures formed thereby |
WO2006085559A1 (en) * | 2005-02-10 | 2006-08-17 | Matsushita Electric Industrial Co., Ltd. | Structure for holding fine structure, semiconductor device, tft driving circuit, panel, display, sensor and their manufacturing methods |
US7375012B2 (en) * | 2005-02-28 | 2008-05-20 | Pavel Kornilovich | Method of forming multilayer film |
US7579618B2 (en) * | 2005-03-02 | 2009-08-25 | Northrop Grumman Corporation | Carbon nanotube resonator transistor and method of making same |
US7824946B1 (en) | 2005-03-11 | 2010-11-02 | Nantero, Inc. | Isolated metal plug process for use in fabricating carbon nanotube memory cells |
WO2006101659A2 (en) * | 2005-03-17 | 2006-09-28 | The George Washington University | Method of making nanoparticle wires |
KR101100887B1 (en) * | 2005-03-17 | 2012-01-02 | 삼성전자주식회사 | Thin film transistor, thin film transistor array panel, and manufacturing method thereof |
JP2008534018A (en) | 2005-03-29 | 2008-08-28 | アプレラ コーポレーション | Nucleic acid analysis nanowire-based system |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
US20060220163A1 (en) * | 2005-03-31 | 2006-10-05 | Shih-Yuan Wang | Light sources that use diamond nanowires |
US8018059B2 (en) * | 2005-03-31 | 2011-09-13 | Xerox Corporation | Electrical interconnect with an electrical pathway including at least a first member overlain by a second member at a contact point |
US9287356B2 (en) | 2005-05-09 | 2016-03-15 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8941094B2 (en) | 2010-09-02 | 2015-01-27 | Nantero Inc. | Methods for adjusting the conductivity range of a nanotube fabric layer |
WO2006113207A2 (en) * | 2005-04-13 | 2006-10-26 | Nanosys, Inc. | Nanowire dispersion compositions and uses thereof |
WO2006116424A2 (en) * | 2005-04-26 | 2006-11-02 | Nanosys, Inc. | Paintable nanofiber coatings |
US9911743B2 (en) | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8008745B2 (en) | 2005-05-09 | 2011-08-30 | Nantero, Inc. | Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
US7835170B2 (en) | 2005-05-09 | 2010-11-16 | Nantero, Inc. | Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks |
TWI324773B (en) | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
US9196615B2 (en) | 2005-05-09 | 2015-11-24 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7781862B2 (en) | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Two-terminal nanotube devices and systems and methods of making same |
US8102018B2 (en) | 2005-05-09 | 2012-01-24 | Nantero Inc. | Nonvolatile resistive memories having scalable two-terminal nanotube switches |
US7394687B2 (en) | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
JP4405427B2 (en) * | 2005-05-10 | 2010-01-27 | 株式会社東芝 | Switching element |
US7598127B2 (en) | 2005-05-12 | 2009-10-06 | Nantero, Inc. | Nanotube fuse structure |
US20070044295A1 (en) * | 2005-05-12 | 2007-03-01 | Nanosys, Inc. | Use of nanoparticles in film formation and as solder |
CN101248709A (en) | 2005-05-18 | 2008-08-20 | 哈佛大学 | Fabrication of conductive pathways, microcircuits and microstructures in microfluidic networks |
US20100227382A1 (en) | 2005-05-25 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale sensors |
WO2006130359A2 (en) * | 2005-06-02 | 2006-12-07 | Nanosys, Inc. | Light emitting nanowires for macroelectronics |
US8545790B2 (en) * | 2005-06-04 | 2013-10-01 | Gregory Konesky | Cross-linked carbon nanotubes |
WO2006132659A2 (en) | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
US7915122B2 (en) | 2005-06-08 | 2011-03-29 | Nantero, Inc. | Self-aligned cell integration scheme |
US20060281306A1 (en) * | 2005-06-08 | 2006-12-14 | Florian Gstrein | Carbon nanotube interconnect contacts |
US7541216B2 (en) | 2005-06-09 | 2009-06-02 | Nantero, Inc. | Method of aligning deposited nanotubes onto an etched feature using a spacer |
WO2006138263A2 (en) * | 2005-06-13 | 2006-12-28 | Electrox Corporation | System and method for the manipulation, classification sorting, purification, placement, and alignment of nano fibers using electrostatic forces and electrographic techniques |
JP5019192B2 (en) * | 2005-06-24 | 2012-09-05 | 株式会社東芝 | Semiconductor device |
US20070048160A1 (en) * | 2005-07-19 | 2007-03-01 | Pinkerton Joseph F | Heat activated nanometer-scale pump |
US7612424B1 (en) | 2005-07-22 | 2009-11-03 | Northwestern University | Nanoelectromechanical bistable cantilever device |
US7638382B2 (en) * | 2005-08-11 | 2009-12-29 | Kabushiki Kaisha Toshiba | Storage apparatus and manufacturing method thereof |
SG183720A1 (en) | 2005-08-12 | 2012-09-27 | Cambrios Technologies Corp | Nanowires-based transparent conductors |
WO2007020648A2 (en) * | 2005-08-17 | 2007-02-22 | Novatrans Group Sa | Non-volatile memory device |
US7799196B2 (en) | 2005-09-01 | 2010-09-21 | Micron Technology, Inc. | Methods and apparatus for sorting and/or depositing nanotubes |
US7410912B2 (en) * | 2005-09-02 | 2008-08-12 | The Hong Kong Polytechnic University | Methods of manufacturing metal oxide nanowires |
WO2008054364A2 (en) | 2005-09-06 | 2008-05-08 | Nantero, Inc. | Carbon nanotubes for the selective transfer of heat from electronics |
AU2006287609B2 (en) | 2005-09-06 | 2012-08-02 | Nantero, Inc. | Method and system of using nanotube fabrics as joule heating elements for memories and other applications |
EP1938381A2 (en) | 2005-09-23 | 2008-07-02 | Nanosys, Inc. | Methods for nanostructure doping |
KR100967210B1 (en) | 2005-09-27 | 2010-07-05 | 삼성전자주식회사 | Shape memory device |
KR100647710B1 (en) * | 2005-10-21 | 2006-11-23 | 삼성에스디아이 주식회사 | A thin film transistor, a method for preparing the same and a flat panel display comprising the same |
KR100723412B1 (en) * | 2005-11-10 | 2007-05-30 | 삼성전자주식회사 | Nonvolatile Memory Device using Nanotube |
ATE528811T1 (en) | 2005-11-21 | 2011-10-15 | Nanosys Inc | NANOWIRE STRUCTURES WITH CARBON |
JP2009528238A (en) | 2005-12-19 | 2009-08-06 | ナンテロ,インク. | Formation of carbon nanotubes |
US7786465B2 (en) * | 2005-12-20 | 2010-08-31 | Invention Science Fund 1, Llc | Deletable nanotube circuit |
US9159417B2 (en) * | 2005-12-20 | 2015-10-13 | The Invention Science Fund I, Llc | Deletable nanotube circuit |
US7696505B2 (en) | 2005-12-20 | 2010-04-13 | Searete Llc | Connectible nanotube circuit |
US7989797B2 (en) * | 2005-12-20 | 2011-08-02 | The Invention Science Fund I, Llc | Connectible nanotube circuit |
JP4843760B2 (en) * | 2005-12-26 | 2011-12-21 | 株式会社発明屋 | Memory element using carbon nanotube |
US7741197B1 (en) | 2005-12-29 | 2010-06-22 | Nanosys, Inc. | Systems and methods for harvesting and reducing contamination in nanowires |
KR101287350B1 (en) * | 2005-12-29 | 2013-07-23 | 나노시스, 인크. | Methods for oriented growth of nanowires on patterned substrates |
US8264137B2 (en) | 2006-01-03 | 2012-09-11 | Samsung Electronics Co., Ltd. | Curing binder material for carbon nanotube electron emission cathodes |
US20070158768A1 (en) * | 2006-01-06 | 2007-07-12 | Honeywell International, Inc. | Electrical contacts formed of carbon nanotubes |
US7417119B2 (en) * | 2006-01-17 | 2008-08-26 | Sri International | Nanoscale array biomolecular bond enhancer device |
US7319416B2 (en) * | 2006-01-30 | 2008-01-15 | Hewlett-Packard Development Company, L.P. | Tunneling-resistor-junction-based microscale/nanoscale demultiplexer arrays |
DE102006004218B3 (en) * | 2006-01-30 | 2007-08-16 | Infineon Technologies Ag | Electromechanical storage device and method for manufacturing an electromechanical storage device |
WO2008060640A2 (en) * | 2006-02-02 | 2008-05-22 | William Marsh Rice University | Nanoparticle / nanotube-based nanoelectronic devices and chemically-directed assembly thereof |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
US8759811B2 (en) * | 2006-02-14 | 2014-06-24 | Raytheon Company | Particle encapsulated nanoswitch |
US7826336B2 (en) | 2006-02-23 | 2010-11-02 | Qunano Ab | Data storage nanostructures |
KR100707212B1 (en) * | 2006-03-08 | 2007-04-13 | 삼성전자주식회사 | Nanowire memory device and method of manufacturing the same |
WO2007106189A2 (en) * | 2006-03-10 | 2007-09-20 | The Trustees Of Columbia University In The City Of New York | Method and system to position carbon nanotubes using ac dielectrophoresis |
US7492046B2 (en) * | 2006-04-21 | 2009-02-17 | International Business Machines Corporation | Electric fuses using CNTs (carbon nanotubes) |
US20070269924A1 (en) * | 2006-05-18 | 2007-11-22 | Basf Aktiengesellschaft | Patterning nanowires on surfaces for fabricating nanoscale electronic devices |
US8304150B1 (en) | 2006-05-22 | 2012-11-06 | Electrox Corporation | Electrostatic printing of functional toner materials for the construction of useful micro-structures |
US7625766B2 (en) * | 2006-06-02 | 2009-12-01 | Micron Technology, Inc. | Methods of forming carbon nanotubes and methods of fabricating integrated circuitry |
DE602007012248D1 (en) | 2006-06-12 | 2011-03-10 | Harvard College | NANOSENSORS AND CORRESPONDING TECHNOLOGIES |
US7763932B2 (en) * | 2006-06-29 | 2010-07-27 | International Business Machines Corporation | Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices |
KR100777973B1 (en) * | 2006-07-13 | 2007-11-29 | 한국표준과학연구원 | Biosensor comprising interdigitated electrode sensor units |
US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
WO2008097275A2 (en) * | 2006-08-30 | 2008-08-14 | Molecular Nanosystems, Inc. | Methods for forming freestanding nanotube objects and objects so formed |
US8058640B2 (en) | 2006-09-11 | 2011-11-15 | President And Fellows Of Harvard College | Branched nanoscale wires |
US8591952B2 (en) | 2006-10-10 | 2013-11-26 | Massachusetts Institute Of Technology | Absorbant superhydrophobic materials, and methods of preparation and use thereof |
US8018568B2 (en) | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
EP2082436B1 (en) * | 2006-10-12 | 2019-08-28 | Cambrios Film Solutions Corporation | Nanowire-based transparent conductors and method of making them |
US7388200B2 (en) * | 2006-10-19 | 2008-06-17 | Hewlett-Packard Development Company, L.P. | Sensing method and nanosensing device for performing the same |
US20100090265A1 (en) * | 2006-10-19 | 2010-04-15 | Micron Technology, Inc. | High density nanodot nonvolatile memory |
KR100827705B1 (en) * | 2006-10-23 | 2008-05-07 | 삼성전자주식회사 | on volatic memory device and method manufacturing the same |
EP2082419A4 (en) * | 2006-11-07 | 2014-06-11 | Systems and methods for nanowire growth | |
KR100819004B1 (en) * | 2006-11-15 | 2008-04-02 | 삼성전자주식회사 | Microelectronics and method of fabricating the same |
US8575663B2 (en) | 2006-11-22 | 2013-11-05 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
US7786024B2 (en) * | 2006-11-29 | 2010-08-31 | Nanosys, Inc. | Selective processing of semiconductor nanowires by polarized visible radiation |
US7951698B2 (en) * | 2006-12-05 | 2011-05-31 | Electronics And Telecommunications Research Institute | Method of fabricating electronic device using nanowires |
US20080150003A1 (en) * | 2006-12-20 | 2008-06-26 | Jian Chen | Electron blocking layers for electronic devices |
US20080150004A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US20080150009A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
US8686490B2 (en) | 2006-12-20 | 2014-04-01 | Sandisk Corporation | Electron blocking layers for electronic devices |
US7847341B2 (en) | 2006-12-20 | 2010-12-07 | Nanosys, Inc. | Electron blocking layers for electronic devices |
FR2910706B1 (en) * | 2006-12-21 | 2009-03-20 | Commissariat Energie Atomique | INTERCONNECTION ELEMENT BASED ON CARBON NANOTUBES |
EP2091862B1 (en) | 2006-12-22 | 2019-12-11 | QuNano AB | Elevated led and method of producing such |
US8049203B2 (en) | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
CN101669219B (en) | 2006-12-22 | 2011-10-05 | 昆南诺股份有限公司 | Led with upstanding nanowire structure and method of producing such |
US8183587B2 (en) | 2006-12-22 | 2012-05-22 | Qunano Ab | LED with upstanding nanowire structure and method of producing such |
US9806273B2 (en) * | 2007-01-03 | 2017-10-31 | The United States Of America As Represented By The Secretary Of The Army | Field effect transistor array using single wall carbon nano-tubes |
US7838809B2 (en) * | 2007-02-17 | 2010-11-23 | Ludwig Lester F | Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials |
US8183566B2 (en) * | 2007-03-01 | 2012-05-22 | Hewlett-Packard Development Company, L.P. | Hetero-crystalline semiconductor device and method of making same |
US8110883B2 (en) | 2007-03-12 | 2012-02-07 | Nantero Inc. | Electromagnetic and thermal sensors using carbon nanotubes and methods of making same |
WO2008124084A2 (en) | 2007-04-03 | 2008-10-16 | Pinkerton Joseph F | Nanoelectromechanical systems and methods for making the same |
WO2009008929A2 (en) | 2007-04-09 | 2009-01-15 | Northeastern University | Bistable nanoswitch |
US8018563B2 (en) | 2007-04-20 | 2011-09-13 | Cambrios Technologies Corporation | Composite transparent conductors and methods of forming the same |
KR101365411B1 (en) | 2007-04-25 | 2014-02-20 | 엘지디스플레이 주식회사 | Fabricating Method of Thin Film Transistor, and Manufacturing Method of Liquid Crystal Display Device |
US7872334B2 (en) * | 2007-05-04 | 2011-01-18 | International Business Machines Corporation | Carbon nanotube diodes and electrostatic discharge circuits and methods |
US7892610B2 (en) | 2007-05-07 | 2011-02-22 | Nanosys, Inc. | Method and system for printing aligned nanowires and other electrical devices |
WO2009005908A2 (en) | 2007-05-22 | 2009-01-08 | Nantero, Inc. | Triodes using nanofabric articles and methods of making the same |
RU2349542C1 (en) | 2007-06-22 | 2009-03-20 | Станислав Викторович Хартов | Nanoelectromechanical structure (versions) and method of its production (versions) |
WO2009002748A1 (en) | 2007-06-22 | 2008-12-31 | Nantero, Inc. | Two-terminal nanotube devices including a nanotube bridge and methods of making same |
US8283258B2 (en) * | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
US7911234B1 (en) * | 2007-09-28 | 2011-03-22 | The Board Of Trustees Of The Leland Stanford Junior University | Nanotube logic circuits |
US8440467B2 (en) * | 2007-09-28 | 2013-05-14 | William Marsh Rice University | Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials |
CN101470558B (en) * | 2007-12-27 | 2012-11-21 | 清华大学 | Touch screen and display equipment |
CN101458598B (en) * | 2007-12-14 | 2011-06-08 | 清华大学 | Touch screen and display device |
US8455055B1 (en) | 2007-10-26 | 2013-06-04 | The Boeing Company | Aligning nanotubes |
US20090110897A1 (en) * | 2007-10-26 | 2009-04-30 | Keith Daniel Humfeld | Nanotube mesh |
US8395901B2 (en) * | 2007-11-13 | 2013-03-12 | William Marsh Rice University | Vertically-stacked electronic devices having conductive carbon films |
US8273983B2 (en) * | 2007-12-21 | 2012-09-25 | Hewlett-Packard Development Company, L.P. | Photonic device and method of making same using nanowires |
CN101471213B (en) * | 2007-12-29 | 2011-11-09 | 清华大学 | Thermal emission electronic component and method for producing the same |
US20090188557A1 (en) * | 2008-01-30 | 2009-07-30 | Shih-Yuan Wang | Photonic Device And Method Of Making Same Using Nanowire Bramble Layer |
US7948042B2 (en) * | 2008-03-03 | 2011-05-24 | The Regents Of The University Of California | Suspended structures |
US8308930B2 (en) * | 2008-03-04 | 2012-11-13 | Snu R&Db Foundation | Manufacturing carbon nanotube ropes |
WO2009120343A1 (en) * | 2008-03-24 | 2009-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Selective oxidative removal of a self-assembled monolayer for controlled nanofabrication |
US20090289524A1 (en) * | 2008-05-21 | 2009-11-26 | Michelangelo Rossetto | Colloid motor: a mechanical mechanism that harnesses colloid forces to serve as a memory, oscillator, or amplifier in the mechanical domain; a hair cell mimesis |
WO2009155359A1 (en) | 2008-06-20 | 2009-12-23 | Nantero, Inc. | Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same |
US8222127B2 (en) | 2008-07-18 | 2012-07-17 | Micron Technology, Inc. | Methods of forming structures having nanotubes extending between opposing electrodes and structures including same |
KR101045128B1 (en) * | 2008-08-04 | 2011-06-30 | 서울대학교산학협력단 | Manufacturing cross-structures of nanostructures |
US8063454B2 (en) * | 2008-08-13 | 2011-11-22 | Micron Technology, Inc. | Semiconductor structures including a movable switching element and systems including same |
US8541843B2 (en) | 2008-08-14 | 2013-09-24 | Nantero Inc. | Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same |
US8673258B2 (en) * | 2008-08-14 | 2014-03-18 | Snu R&Db Foundation | Enhanced carbon nanotube |
US8357346B2 (en) * | 2008-08-20 | 2013-01-22 | Snu R&Db Foundation | Enhanced carbon nanotube wire |
US8021640B2 (en) * | 2008-08-26 | 2011-09-20 | Snu R&Db Foundation | Manufacturing carbon nanotube paper |
US7959842B2 (en) * | 2008-08-26 | 2011-06-14 | Snu & R&Db Foundation | Carbon nanotube structure |
US9006133B2 (en) | 2008-10-24 | 2015-04-14 | Oned Material Llc | Electrochemical catalysts for fuel cells |
US7915637B2 (en) | 2008-11-19 | 2011-03-29 | Nantero, Inc. | Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same |
US8021897B2 (en) | 2009-02-19 | 2011-09-20 | Micron Technology, Inc. | Methods of fabricating a cross point memory array |
FR2942681B1 (en) * | 2009-02-27 | 2011-05-13 | Commissariat Energie Atomique | MICROMETRIC OR NANOMETRIC RESONANT DEVICE WITH TRANSISTORS |
CN102656233B (en) | 2009-05-01 | 2015-04-29 | 纳米系统公司 | Functionalized matrixes for dispersion of nanostructures |
JP5686988B2 (en) | 2009-05-04 | 2015-03-18 | シャープ株式会社 | Catalyst layer used for membrane electrode assembly for fuel cell, membrane electrode assembly for fuel cell using the same, fuel cell, and production method thereof |
CN101880023B (en) * | 2009-05-08 | 2015-08-26 | 清华大学 | Nanomaterial membrane structure |
WO2010132284A1 (en) * | 2009-05-13 | 2010-11-18 | The Trustees Of The University Of Pennsylvania | Photolithographically defined contacts to carbon nanostructures |
JP5882200B2 (en) | 2009-05-19 | 2016-03-09 | ワンディー マテリアル エルエルシー | Nanostructured materials for battery applications |
US20100300728A1 (en) * | 2009-05-27 | 2010-12-02 | Ezekiel Kruglick | Nanowires using a carbon nanotube template |
US8623288B1 (en) | 2009-06-29 | 2014-01-07 | Nanosys, Inc. | Apparatus and methods for high density nanowire growth |
EP2269746B1 (en) * | 2009-07-02 | 2014-05-14 | Nxp B.V. | Collapsed mode capacitive sensor |
WO2011038228A1 (en) | 2009-09-24 | 2011-03-31 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
WO2011036808A1 (en) | 2009-09-28 | 2011-03-31 | 株式会社 東芝 | Switch element and circuit provided with switch element |
US8351239B2 (en) | 2009-10-23 | 2013-01-08 | Nantero Inc. | Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array |
US8895950B2 (en) | 2009-10-23 | 2014-11-25 | Nantero Inc. | Methods for passivating a carbonic nanolayer |
US8551806B2 (en) | 2009-10-23 | 2013-10-08 | Nantero Inc. | Methods for passivating a carbonic nanolayer |
US8841652B2 (en) | 2009-11-30 | 2014-09-23 | International Business Machines Corporation | Self aligned carbide source/drain FET |
US20110127492A1 (en) * | 2009-11-30 | 2011-06-02 | International Business Machines Corporation | Field Effect Transistor Having Nanostructure Channel |
EP2513952A1 (en) * | 2009-12-17 | 2012-10-24 | Merck Patent GmbH | Deposition of nanoparticles |
US8222704B2 (en) | 2009-12-31 | 2012-07-17 | Nantero, Inc. | Compact electrical switching devices with nanotube elements, and methods of making same |
WO2011088340A2 (en) | 2010-01-15 | 2011-07-21 | Board Of Regents, The University Of Texas System | A carbon nanotube crossbar based nano-architecture |
JP2013518974A (en) * | 2010-02-05 | 2013-05-23 | カンブリオス テクノロジーズ コーポレイション | Photosensitive ink composition, transparent conductor, and methods of use thereof |
WO2011100661A1 (en) | 2010-02-12 | 2011-08-18 | Nantero, Inc. | Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films |
US9362390B2 (en) | 2010-02-22 | 2016-06-07 | Nantero, Inc. | Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same |
EP2363958A1 (en) * | 2010-03-04 | 2011-09-07 | Thomson Licensing | Field programmable gate array |
US10661304B2 (en) | 2010-03-30 | 2020-05-26 | Nantero, Inc. | Microfluidic control surfaces using ordered nanotube fabrics |
KR20170026652A (en) | 2010-03-30 | 2017-03-08 | 난테로 인크. | Methods for arranging nanoscopic elements within networks, fabrics, and films |
US8809230B2 (en) | 2010-08-02 | 2014-08-19 | Lawrence Livermore National Security, Llc | Porous substrates filled with nanomaterials |
US10297640B2 (en) | 2010-11-29 | 2019-05-21 | Micron Technology, Inc. | Cross-point memory with self-defined memory elements |
US8455828B1 (en) | 2011-05-09 | 2013-06-04 | Magnolia Optical Technologies, Inc. | Infrared radiation detectors using bundled carbon nanotubes and methods of constructing the same |
JP5637931B2 (en) * | 2011-05-17 | 2014-12-10 | キヤノン株式会社 | Imprint apparatus, imprint method, and device manufacturing method |
FR2980918B1 (en) * | 2011-10-04 | 2014-03-07 | Univ Granada | MEMORY POINT RAM HAS A TRANSISTOR |
US8916825B1 (en) | 2011-12-01 | 2014-12-23 | Magnolia Optical Technologies, Inc. | Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity |
US9177997B2 (en) | 2011-12-13 | 2015-11-03 | Sony Corporation | Memory device |
WO2013098657A1 (en) * | 2012-01-01 | 2013-07-04 | Ramot At Tel-Aviv University Ltd. | Nanostructure and process of fabricating same |
US9196766B1 (en) | 2012-04-25 | 2015-11-24 | Magnolia Optical Technologies, Inc. | Thermal detectors using graphene and oxides of graphene and methods of making the same |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
TWI596188B (en) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | Highly luminescent nanostructures and methods of producing same |
US9005480B2 (en) | 2013-03-14 | 2015-04-14 | Nanosys, Inc. | Method for solventless quantum dot exchange |
US8753953B1 (en) * | 2013-03-15 | 2014-06-17 | International Business Machines Corporation | Self aligned capacitor fabrication |
US9650732B2 (en) | 2013-05-01 | 2017-05-16 | Nantero Inc. | Low defect nanotube application solutions and fabrics and methods for making same |
US10654718B2 (en) | 2013-09-20 | 2020-05-19 | Nantero, Inc. | Scalable nanotube fabrics and methods for making same |
US9713820B2 (en) | 2014-06-02 | 2017-07-25 | The Boeing Company | System and method of forming a nanotube mesh structure |
US9299430B1 (en) | 2015-01-22 | 2016-03-29 | Nantero Inc. | Methods for reading and programming 1-R resistive change element arrays |
US20180088079A1 (en) * | 2015-04-03 | 2018-03-29 | President And Fellows Of Harvard College | Nanoscale wires with external layers for sensors and other applications |
US11171324B2 (en) | 2016-03-15 | 2021-11-09 | Honda Motor Co., Ltd. | System and method of producing a composite product |
US11383213B2 (en) | 2016-03-15 | 2022-07-12 | Honda Motor Co., Ltd. | System and method of producing a composite product |
US9934848B2 (en) | 2016-06-07 | 2018-04-03 | Nantero, Inc. | Methods for determining the resistive states of resistive change elements |
US9941001B2 (en) | 2016-06-07 | 2018-04-10 | Nantero, Inc. | Circuits for determining the resistive states of resistive change elements |
US10762957B2 (en) | 2016-06-30 | 2020-09-01 | University of Pittsburgh—of the Commonwealth System of Higher Education | Two-dimensionally accessible non-volatile memory |
CN107564917B (en) * | 2016-07-01 | 2020-06-09 | 清华大学 | Nano-heterostructure |
CN107564910B (en) * | 2016-07-01 | 2020-08-11 | 清华大学 | Semiconductor device with a plurality of transistors |
IL249804A0 (en) | 2016-12-27 | 2017-04-02 | Yeda Res & Dev | Electromechanical devices based on metal-chalcogenide nanotubes |
US10243156B2 (en) | 2017-03-16 | 2019-03-26 | International Business Machines Corporation | Placement of carbon nanotube guided by DSA patterning |
US11081684B2 (en) | 2017-05-24 | 2021-08-03 | Honda Motor Co., Ltd. | Production of carbon nanotube modified battery electrode powders via single step dispersion |
US20190036102A1 (en) | 2017-07-31 | 2019-01-31 | Honda Motor Co., Ltd. | Continuous production of binder and collector-less self-standing electrodes for li-ion batteries by using carbon nanotubes as an additive |
US10658651B2 (en) | 2017-07-31 | 2020-05-19 | Honda Motor Co., Ltd. | Self standing electrodes and methods for making thereof |
US10993557B2 (en) | 2018-08-03 | 2021-05-04 | American Sterilizer Company | Pressure management warming headrest |
US11121358B2 (en) | 2017-09-15 | 2021-09-14 | Honda Motor Co., Ltd. | Method for embedding a battery tab attachment in a self-standing electrode without current collector or binder |
US11201318B2 (en) | 2017-09-15 | 2021-12-14 | Honda Motor Co., Ltd. | Method for battery tab attachment to a self-standing electrode |
CN112074731A (en) * | 2018-05-04 | 2020-12-11 | 雷纳诊断有限公司 | Biosensor for detecting an analyte |
US11048846B2 (en) | 2018-06-12 | 2021-06-29 | International Business Machines Corporation | Surface participation analysis of superconducting qubits with the boundary element method |
US11535517B2 (en) | 2019-01-24 | 2022-12-27 | Honda Motor Co., Ltd. | Method of making self-standing electrodes supported by carbon nanostructured filaments |
US11352258B2 (en) | 2019-03-04 | 2022-06-07 | Honda Motor Co., Ltd. | Multifunctional conductive wire and method of making |
US11325833B2 (en) | 2019-03-04 | 2022-05-10 | Honda Motor Co., Ltd. | Composite yarn and method of making a carbon nanotube composite yarn |
CN109950393B (en) * | 2019-03-14 | 2021-09-10 | 南京大学 | Preparation method of nanowire cross point array resistive random access memory device structure capable of being prepared in stacked large area |
US11539042B2 (en) | 2019-07-19 | 2022-12-27 | Honda Motor Co., Ltd. | Flexible packaging with embedded electrode and method of making |
US11056797B2 (en) | 2019-07-29 | 2021-07-06 | Eagle Technology, Llc | Articles comprising a mesh formed of a carbon nanotube yarn |
CN112786678B (en) * | 2019-11-08 | 2022-11-22 | 清华大学 | Semiconductor structure and semiconductor device |
US11949161B2 (en) | 2021-08-27 | 2024-04-02 | Eagle Technology, Llc | Systems and methods for making articles comprising a carbon nanotube material |
US11901629B2 (en) | 2021-09-30 | 2024-02-13 | Eagle Technology, Llc | Deployable antenna reflector |
Citations (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2923920A (en) * | 1955-12-30 | 1960-02-02 | fitch | |
US3873359A (en) * | 1971-11-26 | 1975-03-25 | Western Electric Co | Method of depositing a metal on a surface of a substrate |
US3873360A (en) * | 1971-11-26 | 1975-03-25 | Western Electric Co | Method of depositing a metal on a surface of a substrate |
US3900614A (en) * | 1971-11-26 | 1975-08-19 | Western Electric Co | Method of depositing a metal on a surface of a substrate |
US4673474A (en) * | 1984-10-16 | 1987-06-16 | Matsushita Electric Industrial Co., Ltd. | Molecular controlled structure and method of producing the same |
US4939556A (en) * | 1986-07-10 | 1990-07-03 | Canon Kabushiki Kaisha | Conductor device |
US4979149A (en) * | 1986-09-10 | 1990-12-18 | Lgz Landis & Gyr Zug Ag | Non-volatile memory device including a micro-mechanical storage element |
US5089545A (en) * | 1989-02-12 | 1992-02-18 | Biotech International, Inc. | Switching and memory elements from polyamino acids and the method of their assembly |
US5274602A (en) * | 1991-10-22 | 1993-12-28 | Florida Atlantic University | Large capacity solid-state memory |
US5352651A (en) * | 1992-12-23 | 1994-10-04 | Minnesota Mining And Manufacturing Company | Nanostructured imaging transfer element |
US5453970A (en) * | 1993-07-13 | 1995-09-26 | Rust; Thomas F. | Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe |
US5475341A (en) * | 1992-06-01 | 1995-12-12 | Yale University | Sub-nanoscale electronic systems and devices |
US5536968A (en) * | 1992-12-18 | 1996-07-16 | At&T Global Information Solutions Company | Polysilicon fuse array structure for integrated circuits |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5677823A (en) * | 1993-05-06 | 1997-10-14 | Cavendish Kinetics Ltd. | Bi-stable memory element |
US5739057A (en) * | 1995-11-06 | 1998-04-14 | Tiwari; Sandip | Method of making self-aligned dual gate MOSFET with an ultranarrow channel |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US5751156A (en) * | 1995-06-07 | 1998-05-12 | Yale University | Mechanically controllable break transducer |
US5774414A (en) * | 1995-08-09 | 1998-06-30 | Siemens Aktiengesellschaft | Memory device and production method |
US5847565A (en) * | 1997-03-31 | 1998-12-08 | Council Of Scientific And Industrial Research | Logic device |
US5858862A (en) * | 1996-09-25 | 1999-01-12 | Sony Corporation | Process for producing quantum fine wire |
US5897945A (en) * | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
US5903010A (en) * | 1997-10-29 | 1999-05-11 | Hewlett-Packard Company | Quantum wire switch and switching method |
US5948470A (en) * | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US5997832A (en) * | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
US6036774A (en) * | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
US6038060A (en) * | 1997-01-16 | 2000-03-14 | Crowley; Robert Joseph | Optical antenna array for harmonic generation, mixing and signal amplification |
US6069380A (en) * | 1997-07-25 | 2000-05-30 | Regents Of The University Of Minnesota | Single-electron floating-gate MOS memory |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6185122B1 (en) * | 1998-11-16 | 2001-02-06 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6203864B1 (en) * | 1998-06-08 | 2001-03-20 | Nec Corporation | Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube |
US6256767B1 (en) * | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6346189B1 (en) * | 1998-08-14 | 2002-02-12 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube structures made using catalyst islands |
US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
US6536106B1 (en) * | 1999-06-30 | 2003-03-25 | The Penn State Research Foundation | Electric field assisted assembly process |
US6766817B2 (en) * | 2001-07-25 | 2004-07-27 | Tubarc Technologies, Llc | Fluid conduction utilizing a reversible unsaturated siphon with tubarc porosity action |
US6781166B2 (en) * | 1999-07-02 | 2004-08-24 | President & Fellows Of Harvard College | Nanoscopic wire-based devices and arrays |
US7162953B2 (en) * | 2002-03-08 | 2007-01-16 | Voith Paper Patent Gmbh | Roll arrangement |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1079434A (en) * | 1913-02-19 | 1913-11-25 | Edmund A Parker | Nutmeg container and grater. |
FR2228271B1 (en) * | 1973-05-04 | 1976-11-12 | Honeywell Bull Soc Ind | |
US4016456A (en) * | 1975-09-05 | 1977-04-05 | The United States Of America As Represented By The Secretary Of The Navy | Multielectrode grid for aligning polarized particles such as asbestos |
JPH01101191A (en) | 1987-10-14 | 1989-04-19 | Canon Inc | Recording method |
SE506019C2 (en) * | 1994-05-17 | 1997-11-03 | Forskarpatent I Linkoeping Ab | Light source of conjugated polymers with voltage controlled color and method of producing the light source |
EP0812434B1 (en) | 1995-03-01 | 2013-09-18 | President and Fellows of Harvard College | Microcontact printing on surfaces and derivative articles |
US5858561A (en) * | 1995-03-02 | 1999-01-12 | The Ohio State University | Bipolar electroluminescent device |
US5536958A (en) * | 1995-05-02 | 1996-07-16 | Motorola, Inc. | Semiconductor device having high voltage protection capability |
US5872422A (en) * | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
US6060121A (en) * | 1996-03-15 | 2000-05-09 | President And Fellows Of Harvard College | Microcontact printing of catalytic colloids |
US5991456A (en) * | 1996-05-29 | 1999-11-23 | Science And Technology Corporation | Method of improving a digital image |
US6433355B1 (en) * | 1996-06-05 | 2002-08-13 | International Business Machines Corporation | Non-degenerate wide bandgap semiconductors as injection layers and/or contact electrodes for organic electroluminescent devices |
CA2283502C (en) * | 1997-03-07 | 2005-06-14 | William Marsh Rice University | Carbon fibers formed from singlewall carbon nanotubes |
US5961804A (en) * | 1997-03-18 | 1999-10-05 | Massachusetts Institute Of Technology | Microencapsulated electrophoretic display |
JP3183845B2 (en) | 1997-03-21 | 2001-07-09 | 財団法人ファインセラミックスセンター | Method for producing carbon nanotube and carbon nanotube film |
JP3441923B2 (en) | 1997-06-18 | 2003-09-02 | キヤノン株式会社 | Manufacturing method of carbon nanotube |
JP3902883B2 (en) * | 1998-03-27 | 2007-04-11 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
US6303016B1 (en) * | 1998-04-14 | 2001-10-16 | Tda Research, Inc. | Isolation of small-bandgap fullerenes and endohedral metallofullerenes |
JP2000068065A (en) * | 1998-08-13 | 2000-03-03 | Tdk Corp | Organic el element |
US7416699B2 (en) * | 1998-08-14 | 2008-08-26 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
WO2000017101A1 (en) | 1998-09-18 | 2000-03-30 | William Marsh Rice University | Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof; and use of derivatized nanotubes |
AU6267299A (en) | 1998-09-28 | 2000-04-17 | Xidex Corporation | Method for manufacturing carbon nanotubes as functional elements of mems devices |
ATE465519T1 (en) | 1999-02-22 | 2010-05-15 | Clawson Joseph E Jr | ELECTRONIC COMPONENT BASED ON NANOSTRUCTURES |
US6267128B1 (en) * | 1999-06-07 | 2001-07-31 | Patent Category Corp. | Collapsible structures |
US6529312B1 (en) * | 1999-06-07 | 2003-03-04 | Research Frontiers Incorporated | Anisometrically shaped carbon and/or graphite particles, liquid suspensions and films thereof and light valves comprising same |
US6139919A (en) * | 1999-06-16 | 2000-10-31 | University Of Kentucky Research Foundation | Metallic nanoscale fibers from stable iodine-doped carbon nanotubes |
EP1314189B1 (en) | 2000-08-22 | 2013-02-27 | President and Fellows of Harvard College | Electrical device comprising doped semiconductor nanowires and method for its production |
KR100991573B1 (en) | 2000-12-11 | 2010-11-04 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | Nanosensors |
-
2000
- 2000-06-30 JP JP2001508518A patent/JP2003504857A/en active Pending
- 2000-06-30 CA CA2372707A patent/CA2372707C/en not_active Expired - Lifetime
- 2000-06-30 DE DE60044972T patent/DE60044972D1/en not_active Expired - Lifetime
- 2000-06-30 AU AU59055/00A patent/AU782000B2/en not_active Expired
- 2000-06-30 EP EP00945062A patent/EP1194960B1/en not_active Expired - Lifetime
- 2000-06-30 EP EP10166127.0A patent/EP2224508B1/en not_active Expired - Lifetime
- 2000-06-30 AT AT00945062T patent/ATE481745T1/en not_active IP Right Cessation
- 2000-06-30 WO PCT/US2000/018138 patent/WO2001003208A1/en active Application Filing
- 2000-06-30 EP EP09156527A patent/EP2239794A3/en not_active Withdrawn
-
2001
- 2001-10-24 US US10/033,369 patent/US6781166B2/en not_active Expired - Lifetime
-
2004
- 2004-03-29 US US10/812,653 patent/US8178907B2/en not_active Expired - Fee Related
- 2004-10-26 US US10/973,665 patent/US20050117441A1/en not_active Abandoned
-
2005
- 2005-11-21 US US11/284,350 patent/US20060237749A1/en not_active Abandoned
- 2005-11-21 US US11/283,631 patent/US7399691B2/en not_active Expired - Lifetime
- 2005-12-20 US US11/313,096 patent/US7172953B2/en not_active Expired - Lifetime
-
2006
- 2006-07-13 US US11/485,893 patent/US20110174619A1/en not_active Abandoned
- 2006-09-29 US US11/540,148 patent/US20070161237A1/en not_active Abandoned
- 2006-11-03 US US11/592,809 patent/US20070045667A1/en not_active Abandoned
-
2007
- 2007-08-06 US US11/890,366 patent/US20070272951A1/en not_active Abandoned
-
2011
- 2011-04-27 JP JP2011099303A patent/JP2011211207A/en active Pending
-
2012
- 2012-04-11 US US13/444,334 patent/US8471298B2/en not_active Expired - Fee Related
Patent Citations (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2923920A (en) * | 1955-12-30 | 1960-02-02 | fitch | |
US3873359A (en) * | 1971-11-26 | 1975-03-25 | Western Electric Co | Method of depositing a metal on a surface of a substrate |
US3873360A (en) * | 1971-11-26 | 1975-03-25 | Western Electric Co | Method of depositing a metal on a surface of a substrate |
US3900614A (en) * | 1971-11-26 | 1975-08-19 | Western Electric Co | Method of depositing a metal on a surface of a substrate |
US4673474A (en) * | 1984-10-16 | 1987-06-16 | Matsushita Electric Industrial Co., Ltd. | Molecular controlled structure and method of producing the same |
US4939556A (en) * | 1986-07-10 | 1990-07-03 | Canon Kabushiki Kaisha | Conductor device |
US4979149A (en) * | 1986-09-10 | 1990-12-18 | Lgz Landis & Gyr Zug Ag | Non-volatile memory device including a micro-mechanical storage element |
US5089545A (en) * | 1989-02-12 | 1992-02-18 | Biotech International, Inc. | Switching and memory elements from polyamino acids and the method of their assembly |
US5274602A (en) * | 1991-10-22 | 1993-12-28 | Florida Atlantic University | Large capacity solid-state memory |
US5475341A (en) * | 1992-06-01 | 1995-12-12 | Yale University | Sub-nanoscale electronic systems and devices |
US5589692A (en) * | 1992-06-01 | 1996-12-31 | Yale University | Sub-nanoscale electronic systems and devices |
US5536968A (en) * | 1992-12-18 | 1996-07-16 | At&T Global Information Solutions Company | Polysilicon fuse array structure for integrated circuits |
US5352651A (en) * | 1992-12-23 | 1994-10-04 | Minnesota Mining And Manufacturing Company | Nanostructured imaging transfer element |
US5677823A (en) * | 1993-05-06 | 1997-10-14 | Cavendish Kinetics Ltd. | Bi-stable memory element |
US5453970A (en) * | 1993-07-13 | 1995-09-26 | Rust; Thomas F. | Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US5751156A (en) * | 1995-06-07 | 1998-05-12 | Yale University | Mechanically controllable break transducer |
US5774414A (en) * | 1995-08-09 | 1998-06-30 | Siemens Aktiengesellschaft | Memory device and production method |
US5739057A (en) * | 1995-11-06 | 1998-04-14 | Tiwari; Sandip | Method of making self-aligned dual gate MOSFET with an ultranarrow channel |
US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
US6036774A (en) * | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
US5897945A (en) * | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5858862A (en) * | 1996-09-25 | 1999-01-12 | Sony Corporation | Process for producing quantum fine wire |
US6038060A (en) * | 1997-01-16 | 2000-03-14 | Crowley; Robert Joseph | Optical antenna array for harmonic generation, mixing and signal amplification |
US5997832A (en) * | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
US5847565A (en) * | 1997-03-31 | 1998-12-08 | Council Of Scientific And Industrial Research | Logic device |
US5948470A (en) * | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US6069380A (en) * | 1997-07-25 | 2000-05-30 | Regents Of The University Of Minnesota | Single-electron floating-gate MOS memory |
US5903010A (en) * | 1997-10-29 | 1999-05-11 | Hewlett-Packard Company | Quantum wire switch and switching method |
US6060724A (en) * | 1997-10-29 | 2000-05-09 | Hewlett-Packard Company | Quantum wire logic gate |
US6203864B1 (en) * | 1998-06-08 | 2001-03-20 | Nec Corporation | Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube |
US6528020B1 (en) * | 1998-08-14 | 2003-03-04 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
US6346189B1 (en) * | 1998-08-14 | 2002-02-12 | The Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube structures made using catalyst islands |
US6185122B1 (en) * | 1998-11-16 | 2001-02-06 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6256767B1 (en) * | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
US6536106B1 (en) * | 1999-06-30 | 2003-03-25 | The Penn State Research Foundation | Electric field assisted assembly process |
US6781166B2 (en) * | 1999-07-02 | 2004-08-24 | President & Fellows Of Harvard College | Nanoscopic wire-based devices and arrays |
US7172953B2 (en) * | 1999-07-02 | 2007-02-06 | President And Fellows Of Harvard College | Methods of forming nanoscopic wire-based devices and arrays |
US6766817B2 (en) * | 2001-07-25 | 2004-07-27 | Tubarc Technologies, Llc | Fluid conduction utilizing a reversible unsaturated siphon with tubarc porosity action |
US7162953B2 (en) * | 2002-03-08 | 2007-01-16 | Voith Paper Patent Gmbh | Roll arrangement |
Cited By (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060237749A1 (en) * | 1999-07-02 | 2006-10-26 | President And Fellows Of Harvard College | Nanoscopic wire-based devices and arrays |
US20070272951A1 (en) * | 1999-07-02 | 2007-11-29 | President And Fellows Of Harvard College | Nanoscopic wire-based devices and arrays |
US8178907B2 (en) | 1999-07-02 | 2012-05-15 | President And Fellows Of Harvard College | Nanoscopic wire-based electrical crossbar memory-devices and arrays |
US20040188721A1 (en) * | 1999-07-02 | 2004-09-30 | President And Fellows Of Harvard University | Nanoscopic wired-based devices and arrays |
US8471298B2 (en) | 1999-07-02 | 2013-06-25 | President And Fellows Of Harvard College | Nanoscopic wire-based devices and arrays |
US20070217519A1 (en) * | 2006-03-01 | 2007-09-20 | Mitsubishi Electric Corporation | Moving image decoding apparatus and moving image coding apparatus |
US8252164B2 (en) | 2006-11-09 | 2012-08-28 | Nanosys, Inc. | Methods for nanowire alignment and deposition |
US7968474B2 (en) | 2006-11-09 | 2011-06-28 | Nanosys, Inc. | Methods for nanowire alignment and deposition |
US8512846B2 (en) | 2007-01-24 | 2013-08-20 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US20080176767A1 (en) * | 2007-01-24 | 2008-07-24 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US8083953B2 (en) | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8409449B2 (en) | 2007-03-06 | 2013-04-02 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8753738B2 (en) | 2007-03-06 | 2014-06-17 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US8784974B2 (en) | 2007-03-22 | 2014-07-22 | Micron Technology, Inc. | Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US8801894B2 (en) | 2007-03-22 | 2014-08-12 | Micron Technology, Inc. | Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US8956713B2 (en) | 2007-04-18 | 2015-02-17 | Micron Technology, Inc. | Methods of forming a stamp and a stamp |
US9768021B2 (en) | 2007-04-18 | 2017-09-19 | Micron Technology, Inc. | Methods of forming semiconductor device structures including metal oxide structures |
US9276059B2 (en) | 2007-04-18 | 2016-03-01 | Micron Technology, Inc. | Semiconductor device structures including metal oxide structures |
US9142420B2 (en) | 2007-04-20 | 2015-09-22 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US9257256B2 (en) | 2007-06-12 | 2016-02-09 | Micron Technology, Inc. | Templates including self-assembled block copolymer films |
US8609221B2 (en) | 2007-06-12 | 2013-12-17 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US20100279062A1 (en) * | 2007-06-12 | 2010-11-04 | Millward Dan B | Alternating Self-Assembling Morphologies of Diblock Copolymers Controlled by Variations in Surfaces |
US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US8513359B2 (en) | 2007-06-19 | 2013-08-20 | Micron Technology, Inc. | Crosslinkable graft polymer non preferentially wetted by polystyrene and polyethylene oxide |
US8785559B2 (en) | 2007-06-19 | 2014-07-22 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8445592B2 (en) | 2007-06-19 | 2013-05-21 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8551808B2 (en) | 2007-06-21 | 2013-10-08 | Micron Technology, Inc. | Methods of patterning a substrate including multilayer antireflection coatings |
US11560009B2 (en) | 2008-02-05 | 2023-01-24 | Micron Technology, Inc. | Stamps including a self-assembled block copolymer material, and related methods |
US10005308B2 (en) | 2008-02-05 | 2018-06-26 | Micron Technology, Inc. | Stamps and methods of forming a pattern on a substrate |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US10828924B2 (en) | 2008-02-05 | 2020-11-10 | Micron Technology, Inc. | Methods of forming a self-assembled block copolymer material |
US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US8642157B2 (en) | 2008-02-13 | 2014-02-04 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US20090200646A1 (en) * | 2008-02-13 | 2009-08-13 | Millward Dan B | One-Dimensional Arrays of Block Copolymer Cylinders and Applications Thereof |
US10153200B2 (en) | 2008-03-21 | 2018-12-11 | Micron Technology, Inc. | Methods of forming a nanostructured polymer material including block copolymer materials |
US8641914B2 (en) | 2008-03-21 | 2014-02-04 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8633112B2 (en) | 2008-03-21 | 2014-01-21 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US9315609B2 (en) | 2008-03-21 | 2016-04-19 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US11282741B2 (en) | 2008-03-21 | 2022-03-22 | Micron Technology, Inc. | Methods of forming a semiconductor device using block copolymer materials |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US9682857B2 (en) | 2008-03-21 | 2017-06-20 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom |
US8114300B2 (en) | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8455082B2 (en) | 2008-04-21 | 2013-06-04 | Micron Technology, Inc. | Polymer materials for formation of registered arrays of cylindrical pores |
US20090263628A1 (en) * | 2008-04-21 | 2009-10-22 | Millward Dan B | Multi-Layer Method for Formation of Registered Arrays of Cylindrical Pores in Polymer Films |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US8518275B2 (en) | 2008-05-02 | 2013-08-27 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US8993088B2 (en) | 2008-05-02 | 2015-03-31 | Micron Technology, Inc. | Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials |
US20090274887A1 (en) * | 2008-05-02 | 2009-11-05 | Millward Dan B | Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders |
US8669645B2 (en) | 2008-10-28 | 2014-03-11 | Micron Technology, Inc. | Semiconductor structures including polymer material permeated with metal oxide |
US20100124096A1 (en) * | 2008-11-18 | 2010-05-20 | Kabushiki Kaisha Toshiba | Electric element, switching element, memory element, switching method and memory method |
US8014188B2 (en) * | 2008-11-18 | 2011-09-06 | Kabushiki Kaisha Toshiba | Electric element, switching element, memory element, switching method and memory method |
US9390951B2 (en) | 2009-05-26 | 2016-07-12 | Sharp Kabushiki Kaisha | Methods and systems for electric field deposition of nanowires and other devices |
FR2961344A1 (en) * | 2010-06-09 | 2011-12-16 | Commissariat Energie Atomique | METHOD FOR PRODUCING A GRID OF CONDUCTIVE OR SEMICONDUCTOR LINES OF CROSS ACCESS |
US8685819B2 (en) | 2010-06-09 | 2014-04-01 | Commissariat A L'energie Atomique | Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines |
EP2395543A1 (en) | 2010-06-09 | 2011-12-14 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Method for manufacturing a grid of conductive lines with crossed access |
US8450418B2 (en) | 2010-08-20 | 2013-05-28 | Micron Technology, Inc. | Methods of forming block copolymers, and block copolymer compositions |
US9431605B2 (en) | 2011-11-02 | 2016-08-30 | Micron Technology, Inc. | Methods of forming semiconductor device structures |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
US11532477B2 (en) | 2013-09-27 | 2022-12-20 | Micron Technology, Inc. | Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof |
US10049874B2 (en) | 2013-09-27 | 2018-08-14 | Micron Technology, Inc. | Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof |
Also Published As
Publication number | Publication date |
---|---|
US7172953B2 (en) | 2007-02-06 |
US20080116491A1 (en) | 2008-05-22 |
US7399691B2 (en) | 2008-07-15 |
US20070045667A1 (en) | 2007-03-01 |
EP2239794A3 (en) | 2011-03-23 |
US20060220067A1 (en) | 2006-10-05 |
JP2003504857A (en) | 2003-02-04 |
DE60044972D1 (en) | 2010-10-28 |
WO2001003208A1 (en) | 2001-01-11 |
EP1194960A1 (en) | 2002-04-10 |
AU5905500A (en) | 2001-01-22 |
EP1194960B1 (en) | 2010-09-15 |
CA2372707A1 (en) | 2001-01-11 |
US6781166B2 (en) | 2004-08-24 |
US20120193602A1 (en) | 2012-08-02 |
US20020130353A1 (en) | 2002-09-19 |
AU782000B2 (en) | 2005-06-23 |
EP2239794A2 (en) | 2010-10-13 |
US20040188721A1 (en) | 2004-09-30 |
EP2224508B1 (en) | 2016-01-06 |
US20060237749A1 (en) | 2006-10-26 |
US8178907B2 (en) | 2012-05-15 |
EP2224508A3 (en) | 2010-10-27 |
CA2372707C (en) | 2014-12-09 |
JP2011211207A (en) | 2011-10-20 |
WO2001003208A9 (en) | 2002-02-14 |
EP2224508A2 (en) | 2010-09-01 |
US20070272951A1 (en) | 2007-11-29 |
US8471298B2 (en) | 2013-06-25 |
US20050117441A1 (en) | 2005-06-02 |
US20110174619A1 (en) | 2011-07-21 |
ATE481745T1 (en) | 2010-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8471298B2 (en) | Nanoscopic wire-based devices and arrays | |
Reed | Molecular-scale electronics | |
Mantooth et al. | Fabrication, assembly, and characterization of molecular electronic components | |
JP4499418B2 (en) | Method for manufacturing a molecular electronic device | |
Goldhaber-Gordon et al. | Overview of nanoelectronic devices | |
US7272511B2 (en) | Molecular memory obtained using DNA strand molecular switches and carbon nanotubes, and method for manufacturing the same | |
Wada | Prospects for single molecule information processing devices | |
Appenzeller et al. | Carbon nanotubes for data processing | |
AU2006202493B2 (en) | Nanoscopic wire-based devices, arrays, and methods of their manufacture | |
AU2005201840B2 (en) | Nanoscopic wire-based devices, arrays, and methods of their manufacture | |
Nichols et al. | Electronic Switches | |
Guisinger et al. | Molecular Electronics: An Overview of the Current State of the Science and the Challenges That Lie Ahead | |
Mangir et al. | Integrity and Integration Issues for Nano-Tube Based Interconnect Systems. | |
Sohlberg et al. | Nanoelectronics with Single Molecules |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, MASSACHU Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIEBER, CHARLES M.;RUECKES, THOMAS;JOSELEVICH, ERNESTO;AND OTHERS;REEL/FRAME:022071/0383;SIGNING DATES FROM 20020222 TO 20020326 Owner name: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, MASSACHU Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIEBER, CHARLES M.;RUECKES, THOMAS;JOSELEVICH, ERNESTO;AND OTHERS;SIGNING DATES FROM 20020222 TO 20020326;REEL/FRAME:022071/0383 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |