US20070159064A1 - White light emitting device - Google Patents
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- US20070159064A1 US20070159064A1 US11/600,107 US60010706A US2007159064A1 US 20070159064 A1 US20070159064 A1 US 20070159064A1 US 60010706 A US60010706 A US 60010706A US 2007159064 A1 US2007159064 A1 US 2007159064A1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 40
- 238000000295 emission spectrum Methods 0.000 claims description 20
- 238000009877 rendering Methods 0.000 claims description 9
- 238000004064 recycling Methods 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 description 6
- 239000003086 colorant Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a white light emitting device, and more particularly, to a white light emitting device using up to two LEDs to achieve superior color reproducibility and high efficiency.
- a white LED apparatus is preferred over a conventional small-sized lamp or a fluorescent lamp as a backlight of a Liquid Crystal Display (LCD).
- the white LED apparatus can be manufactured by forming a ceramic phosphor layer on a light exiting surface of a blue LED.
- the most representative type of conventional white LED apparatus is realized by combining a GaN-based blue LED with YAG-based yellow phosphor.
- the blue light emitted from the blue LED excites the phosphor to emit yellow light.
- a mixture of blue light and yellow light is perceived as white light by the observer.
- Such a white LED apparatus has advantages like relatively high efficiency and low costs but also drawbacks like mediocre color reproducibility.
- FIG. 1 shows a light emission spectrum of a conventional white light emitting device manufactured by combining a GaN-based blue LED with YAG-based yellow phosphor. As shown in FIG. 1 , the light intensity is high in the blue and yellow regions but low in the green and red regions. Therefore, such a white light emitting device does not well express the green and red regions, thus having a mediocre color rendering index and color reproducibility.
- a white light LED apparatus may be realized by combining blue, green and red LEDs.
- FIG. 2 shows light emission spectrums of such a type of conventional white LED apparatuses composed of blue, green and red LEDs.
- FIG. 2 shows light emission spectrums of white LED apparatuses with different correlated color temperatures.
- Such white LED apparatuses have relatively good color reproducibility but with high power consumption and low efficiency.
- these white LED apparatuses are not cost-effective with complex circuit configurations.
- LEDs can be used to realize a white light emitting device by combining an ultraviolet LED (UV LED) with green/blue/red phosphor or a mixture of blue, green and red phosphors.
- UV LED ultraviolet LED
- Such a white light emitting device has superior color reproducibility with low costs, but is not yet commonly used and has low efficiency. Therefore, there exists a need for developing a white light emitting device which satisfies a need for high efficiency and high color reproducibility.
- the present invention has been made to solve the foregoing problems of the prior art and therefore an object of certain embodiments of the present invention is to provide a high-quality white light emitting device having high efficiency and superior color reproducibility.
- a white light emitting device including: a structure for emitting white light having at least four wavelengths by using two or less light emitting diodes (LEDs), wherein the LEDs comprise a blue/green LED emitting blue and green wavelengths of light; and the device comprising means for emitting red wavelength of light.
- LEDs light emitting diodes
- the blue/green LED may be an InGaN-based LED.
- the red light emitting means may be an InGaAlP-based LED.
- the red light emitting means may be red phosphor or a red Photon Recycling System (PRS).
- PRS Red Photon Recycling System
- the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, and a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm and a red peak wavelength in the range of 620 to 640 nm. More preferably, the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 450 to 460 nm, a green peak wavelength in the range of 505 to 515 nm, and a yellow peak wavelength in the range of 565 to 575 nm, and a red peak wavelength in the range of 630 to 640 nm. In this case, the white light has a color rendering index of at least 95.
- the white light emitting device may further comprise yellow phosphor, wherein the red light emitting means may comprise at least one selected from a group consisting of a red LED, a red PRS and red phosphor.
- the white light emitting device attains white light by mixing the blue, green, yellow and red colors.
- the yellow phosphor has a peak wavelength in the range of 540 to 590 nm.
- the red light emitting means may be an amber/red LED emitting amber and red wavelengths of light.
- the white light emitting device attains white light by mixing the blue, green, amber and red colors.
- the blue/green LED is adapted to emit amber wavelength of light along with blue and green wavelengths of light
- the red light emitting means may be a red LED emitting red wavelength of light.
- the white light emitting device uses two LEDs to attain white light by mixing the blue, green, amber and red colors.
- FIG. 1 is a graph showing a light emission spectrum of a conventional white light emitting device according to the prior art
- FIG. 2 is a graph showing light emission spectrums of another type of conventional light emitting devices according to the prior art
- FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention.
- FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 3 ;
- FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to wavelength;
- FIG. 6 is a schematic sectional view illustrating a white light emitting device according to another embodiment of the present invention.
- FIG. 7 is a schematic sectional view illustrating a white light emitting device according to further another embodiment of the present invention.
- FIG. 8 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 7 ;
- FIG. 9 is a schematic sectional view illustrating a white light emitting device according to still another embodiment of the present invention.
- FIG. 10 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 9 ;
- FIG. 11 is a schematic sectional view illustrating a white light emitting device according to yet another embodiment of the present invention.
- FIG. 12 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 11 .
- FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention.
- the white light emitting device 100 includes a blue/green LED 101 and a red LED 102 mounted in a cup-shaped reflecting recess 110 of a package and yellow phosphor 103 .
- the blue/green LED 101 is a single chip emitting both blue wavelength of light B and green wavelength of light G.
- the yellow phosphor 103 absorbs the light generated from the LED 101 to generate yellow light Y.
- the red LED 102 generates red wavelength of light R.
- the blue/green LED 101 is an InGaN-based LED and the red LED 102 is an InGaAlP-based LED.
- the blue/green LED 101 and the red LED 102 are encapsulated by a light-transmitting resin 105 .
- the yellow phosphor 103 powders are dispersed in the resin 105 .
- the yellow phosphor 103 may be for example YAG-based yellow phosphor which absorbs the blue light to generate yellow light.
- the YAG-based yellow phosphor 103 absorbs a portion of the output light of the blue/green LED 101 and generates the yellow light Y.
- the yellow phosphor 103 emits light having a peak wavelength in the range of 540 to 590 nm.
- the white light emitting device 100 outputs white light in a wide range of wavelength using the blue, green, yellow and red light beams generated from the LEDs 101 and 102 and the yellow phosphor 103 .
- the white light emitting device 100 generates visible rays with 4 wavelengths using only two LEDs, thus improved in color reproducibility and efficiency at the same time.
- the white light emitting device 100 emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm, and a red peak wavelength in the range of 620 to 640 nm. More preferably, the blue peak wavelength may range from 450 to 460 nm, the green peak wavelength may range from 505 to 515 nm, the yellow peak wavelength may range from 565 to 575 nm, and the red peak wavelength may range from 630 to 640 nm. This allows realizing a high-quality white light emitting device having a color rendering index of at least 95.
- the white light emitting device 100 achieves a superior color rendering index (or color reproducibility) and improved power and light efficiency.
- the blue/green LED 101 is an InGaN-based LED and the red LED 102 is an InGaAlP-based LED
- the blue/green LED 101 may have a short peak wavelength of up to 470 nm and the red LED 102 may have a long peak wavelength of at least 620 nm to achieve further improved efficiency, which is confirmed as shown in FIG. 5 .
- FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to the wavelength. As shown in FIG. 5 , the InGaN-based LED exhibits higher external quantum efficiency with a shorter wavelength (peak wavelength), and the InGaAlP-based LED exhibits higher external quantum efficiency with a longer wavelength (peak wavelength).
- the white light emitting device can achieve high efficiency in an entire visible ray-region and high luminance of at least 50 lm/W.
- FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 3 .
- the white light emitting device 100 emits white light having peak wavelengths in the blue, green, yellow and red regions at 455 nm, 510 nm, 570 nm and 635 nm, respectively.
- Such a wide visible ray spectrum with 4 wavelengths allows high color reproducibility and a high color rendering index, thereby resulting in a high-quality white light close to natural light.
- FIG. 6 illustrates a white light emitting device according to another embodiment of the present invention.
- the white light emitting device 200 according to this embodiment is distinguished from the previously described white light emitting device 100 in that it includes a red Photon Recycling System (PRS) 112 instead of the red LED.
- PRS Red Photon Recycling System
- the PRS like any phosphor, absorbs light from other light source to generate a different wavelength of light without any voltage applied.
- the PRS is made of semiconductor material.
- Such red PRS 112 is disposed on a light exiting surface of the blue/green LED 101 , absorbing the blue light (or green light) emitted from the LED 101 to generate red light R.
- the white light emitting device 200 uses only one LED (blue/green LED 101 ) to output white light having a wide spectrum with 4 wavelengths, the white light emitting device 200 has high efficiency and superior color reproducibility.
- FIG. 7 illustrates a white light emitting device 300 according to further another embodiment of the present invention.
- the white light emitting device 300 according to this embodiment is distinguished from the previously described white light emitting device 100 in that it includes red phosphor 107 instead of the red LED.
- the blue/green LED 101 , the yellow phosphor 103 and the red phosphor 107 emanate blue, green, yellow and red colors, respectively, thereby attaining a visible ray spectrum with 4 wavelengths. Similar to the aforedescribed embodiment, only one LED (blue/green LED 101 ) is used in the white light emitting device 300 in this embodiment to output white light with 4 wavelengths, achieving high efficiency and superior color reproducibility.
- the red phosphor phosphor having a composition, Sr x Ca l-x S:Eu 2+ , where x is greater than or equal to 0 and less than or equal to 1, can be used.
- the phosphor, Sr x Ca 1-x S:Eu 2+ absorbs blue light to emanate red light.
- FIG. 8 shows a light emission spectrum of the white light emitting device 300 shown in FIG. 7 .
- the light emission spectrum exhibits peak wavelengths in the blue, green, yellow and red regions at 450 nm, 493 nm, 570 nm and 615 nm, respectively. With the respective peak wavelengths in the 4 wavelength regions, the white light emitting device 300 achieves high color reproducibility and a high color rendering index.
- FIG. 9 illustrates a white light emitting device according to yet another embodiment of the present invention.
- the white light emitting device 400 includes a blue/green LED 101 mounted in a cup-shaped reflecting recess of a package and an amber/red LED 150 . Therefore, in this embodiment, two LEDs (the blue/green LED and the amber/red LED) emit a blue light beam B, a green light beam G, an amber light beam A and a red light beam R. Using only two LEDs to output white light having a wide spectrum with 4 wavelengths, the white light emitting device 400 has high efficiency and superior color reproducibility.
- FIG. 10 shows a light emission spectrum of the white light emitting device 400 shown in FIG. 9 .
- the white light emitting device 400 emits white light having a light emission spectrum with peak wavelengths at 458 nm, 525 nm, 590 nm and 640 nm, respectively. With the respective peak wavelengths in a wide visible ray region with 4 wavelengths, the white light emitting device 400 achieves high color reproducibility and a high color rendering index.
- FIG. 11 illustrates a white light emitting device according to still another embodiment of the present invention.
- the white light emitting device 500 includes a blue/green LED 170 mounted in a cup-shaped reflecting recess of a package and a red LED 102 .
- the blue/green LED 170 emits not only blue and green light but also amber light. That is, the blue/green LED 170 is a three-wavelength LED emitting blue, green and amber wavelengths of light.
- Such a three-wavelength LED can be realized by altering the In content of an InGaN layer in an active layer of multiple quantum well.
- the blue light B, green light G and amber light A emitted from the blue/green LED 170 and the red light R emitted from the red LED 102 are mixed to produce high-quality white light having a wide spectrum with 4 wavelengths.
- the light emission spectrum of the white light emitting device 500 is shown in FIG. 12 . As shown in FIG. 12 , the white light emitting device 500 has peak wavelengths at 450 nm, 500 nm, 570 nm and 635 nm, respectively to output high-quality white light with 4 wavelengths.
- the white light emitting device uses two or less LEDs to output white light having a wide spectrum with 4 wavelengths, thereby achieving superior color reproducibility and high efficiency.
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Abstract
Description
- This application claims the benefit of Korean Patent Application No. 2005-130652 filed on Dec. 27, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to a white light emitting device, and more particularly, to a white light emitting device using up to two LEDs to achieve superior color reproducibility and high efficiency.
- 2. Description of the Related Art
- In general, a white LED apparatus is preferred over a conventional small-sized lamp or a fluorescent lamp as a backlight of a Liquid Crystal Display (LCD). The white LED apparatus can be manufactured by forming a ceramic phosphor layer on a light exiting surface of a blue LED.
- The most representative type of conventional white LED apparatus is realized by combining a GaN-based blue LED with YAG-based yellow phosphor. The blue light emitted from the blue LED excites the phosphor to emit yellow light. A mixture of blue light and yellow light is perceived as white light by the observer. Such a white LED apparatus has advantages like relatively high efficiency and low costs but also drawbacks like mediocre color reproducibility.
-
FIG. 1 shows a light emission spectrum of a conventional white light emitting device manufactured by combining a GaN-based blue LED with YAG-based yellow phosphor. As shown inFIG. 1 , the light intensity is high in the blue and yellow regions but low in the green and red regions. Therefore, such a white light emitting device does not well express the green and red regions, thus having a mediocre color rendering index and color reproducibility. - Alternatively, a white light LED apparatus may be realized by combining blue, green and red LEDs.
FIG. 2 shows light emission spectrums of such a type of conventional white LED apparatuses composed of blue, green and red LEDs. In particular,FIG. 2 shows light emission spectrums of white LED apparatuses with different correlated color temperatures. Such white LED apparatuses have relatively good color reproducibility but with high power consumption and low efficiency. Moreover, these white LED apparatuses are not cost-effective with complex circuit configurations. - As a further alternative, LEDs can be used to realize a white light emitting device by combining an ultraviolet LED (UV LED) with green/blue/red phosphor or a mixture of blue, green and red phosphors. Such a white light emitting device has superior color reproducibility with low costs, but is not yet commonly used and has low efficiency. Therefore, there exists a need for developing a white light emitting device which satisfies a need for high efficiency and high color reproducibility.
- The present invention has been made to solve the foregoing problems of the prior art and therefore an object of certain embodiments of the present invention is to provide a high-quality white light emitting device having high efficiency and superior color reproducibility.
- According to an aspect of the invention for realizing the object, there is provided a white light emitting device including: a structure for emitting white light having at least four wavelengths by using two or less light emitting diodes (LEDs), wherein the LEDs comprise a blue/green LED emitting blue and green wavelengths of light; and the device comprising means for emitting red wavelength of light.
- The blue/green LED may be an InGaN-based LED. Also the red light emitting means may be an InGaAlP-based LED. Alternatively, the red light emitting means may be red phosphor or a red Photon Recycling System (PRS).
- Preferably, the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, and a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm and a red peak wavelength in the range of 620 to 640 nm. More preferably, the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 450 to 460 nm, a green peak wavelength in the range of 505 to 515 nm, and a yellow peak wavelength in the range of 565 to 575 nm, and a red peak wavelength in the range of 630 to 640 nm. In this case, the white light has a color rendering index of at least 95.
- According to an embodiment of the present invention, the white light emitting device may further comprise yellow phosphor, wherein the red light emitting means may comprise at least one selected from a group consisting of a red LED, a red PRS and red phosphor. In this case, the white light emitting device attains white light by mixing the blue, green, yellow and red colors. Preferably, the yellow phosphor has a peak wavelength in the range of 540 to 590 nm.
- According to another embodiment of the present invention, the red light emitting means may be an amber/red LED emitting amber and red wavelengths of light. In this case, the white light emitting device attains white light by mixing the blue, green, amber and red colors.
- According to further another embodiment of the present invention, the blue/green LED is adapted to emit amber wavelength of light along with blue and green wavelengths of light, and the red light emitting means may be a red LED emitting red wavelength of light. In this case, the white light emitting device uses two LEDs to attain white light by mixing the blue, green, amber and red colors.
- The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
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FIG. 1 is a graph showing a light emission spectrum of a conventional white light emitting device according to the prior art; -
FIG. 2 is a graph showing light emission spectrums of another type of conventional light emitting devices according to the prior art; -
FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention; -
FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown inFIG. 3 ; -
FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to wavelength; -
FIG. 6 is a schematic sectional view illustrating a white light emitting device according to another embodiment of the present invention; -
FIG. 7 is a schematic sectional view illustrating a white light emitting device according to further another embodiment of the present invention; -
FIG. 8 is a graph showing a light emission spectrum of the white light emitting device shown inFIG. 7 ; -
FIG. 9 is a schematic sectional view illustrating a white light emitting device according to still another embodiment of the present invention; -
FIG. 10 is a graph showing a light emission spectrum of the white light emitting device shown inFIG. 9 ; -
FIG. 11 is a schematic sectional view illustrating a white light emitting device according to yet another embodiment of the present invention; and -
FIG. 12 is a graph showing a light emission spectrum of the white light emitting device shown inFIG. 11 . - Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The invention may however be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes and dimensions may be exaggerated for clarity, and the same reference numerals are used throughout to designate the same or like parts.
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FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention. Referring toFIG. 3 , the whitelight emitting device 100 includes a blue/green LED 101 and ared LED 102 mounted in a cup-shaped reflecting recess 110 of a package andyellow phosphor 103. The blue/green LED 101 is a single chip emitting both blue wavelength of light B and green wavelength of light G. Theyellow phosphor 103 absorbs the light generated from theLED 101 to generate yellow light Y. Thered LED 102 generates red wavelength of light R. Preferably, the blue/green LED 101 is an InGaN-based LED and thered LED 102 is an InGaAlP-based LED. - The blue/
green LED 101 and thered LED 102 are encapsulated by a light-transmittingresin 105. Theyellow phosphor 103 powders are dispersed in theresin 105. Theyellow phosphor 103 may be for example YAG-based yellow phosphor which absorbs the blue light to generate yellow light. In this case, the YAG-basedyellow phosphor 103 absorbs a portion of the output light of the blue/green LED 101 and generates the yellow light Y. Preferably, theyellow phosphor 103 emits light having a peak wavelength in the range of 540 to 590 nm. - The white
light emitting device 100 with the above described configuration outputs white light in a wide range of wavelength using the blue, green, yellow and red light beams generated from theLEDs yellow phosphor 103. Particularly, the whitelight emitting device 100 generates visible rays with 4 wavelengths using only two LEDs, thus improved in color reproducibility and efficiency at the same time. - To realize white light having a color rendering index of at least 90, it is preferable that the white
light emitting device 100 emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm, and a red peak wavelength in the range of 620 to 640 nm. More preferably, the blue peak wavelength may range from 450 to 460 nm, the green peak wavelength may range from 505 to 515 nm, the yellow peak wavelength may range from 565 to 575 nm, and the red peak wavelength may range from 630 to 640 nm. This allows realizing a high-quality white light emitting device having a color rendering index of at least 95. - With each of the peak wavelengths in each of the above preferable wavelength ranges, the white
light emitting device 100 achieves a superior color rendering index (or color reproducibility) and improved power and light efficiency. In particular, in the case where the blue/green LED 101 is an InGaN-based LED and thered LED 102 is an InGaAlP-based LED, the blue/green LED 101 may have a short peak wavelength of up to 470 nm and thered LED 102 may have a long peak wavelength of at least 620 nm to achieve further improved efficiency, which is confirmed as shown inFIG. 5 . -
FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to the wavelength. As shown inFIG. 5 , the InGaN-based LED exhibits higher external quantum efficiency with a shorter wavelength (peak wavelength), and the InGaAlP-based LED exhibits higher external quantum efficiency with a longer wavelength (peak wavelength). Using YAG-based phosphor generating a yellow region of light together with an InGaN-based blue/green LED having a peak wavelength of up to 470 nm and an InGaAlP-based red LED having a peak wavelength of at least 620 nm, the white light emitting device can achieve high efficiency in an entire visible ray-region and high luminance of at least 50 lm/W. -
FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown inFIG. 3 . As shown inFIG. 4 , the whitelight emitting device 100 emits white light having peak wavelengths in the blue, green, yellow and red regions at 455 nm, 510 nm, 570 nm and 635 nm, respectively. Such a wide visible ray spectrum with 4 wavelengths allows high color reproducibility and a high color rendering index, thereby resulting in a high-quality white light close to natural light. -
FIG. 6 illustrates a white light emitting device according to another embodiment of the present invention. As shown inFIG. 6 , the whitelight emitting device 200 according to this embodiment is distinguished from the previously described whitelight emitting device 100 in that it includes a red Photon Recycling System (PRS) 112 instead of the red LED. - In general, the PRS, like any phosphor, absorbs light from other light source to generate a different wavelength of light without any voltage applied. However, unlike the phosphor, the PRS is made of semiconductor material. Such
red PRS 112 is disposed on a light exiting surface of the blue/green LED 101, absorbing the blue light (or green light) emitted from theLED 101 to generate red light R. Using only one LED (blue/green LED 101) to output white light having a wide spectrum with 4 wavelengths, the whitelight emitting device 200 has high efficiency and superior color reproducibility. -
FIG. 7 illustrates a whitelight emitting device 300 according to further another embodiment of the present invention. The whitelight emitting device 300 according to this embodiment is distinguished from the previously described whitelight emitting device 100 in that it includesred phosphor 107 instead of the red LED. - As shown in
FIG. 7 , the blue/green LED 101, theyellow phosphor 103 and thered phosphor 107 emanate blue, green, yellow and red colors, respectively, thereby attaining a visible ray spectrum with 4 wavelengths. Similar to the aforedescribed embodiment, only one LED (blue/green LED 101) is used in the whitelight emitting device 300 in this embodiment to output white light with 4 wavelengths, achieving high efficiency and superior color reproducibility. For the red phosphor, phosphor having a composition, SrxCal-xS:Eu2+, where x is greater than or equal to 0 and less than or equal to 1, can be used. The phosphor, SrxCa1-xS:Eu2+ absorbs blue light to emanate red light. -
FIG. 8 shows a light emission spectrum of the whitelight emitting device 300 shown inFIG. 7 . As shown inFIG. 8 , the light emission spectrum exhibits peak wavelengths in the blue, green, yellow and red regions at 450 nm, 493 nm, 570 nm and 615 nm, respectively. With the respective peak wavelengths in the 4 wavelength regions, the whitelight emitting device 300 achieves high color reproducibility and a high color rendering index. -
FIG. 9 illustrates a white light emitting device according to yet another embodiment of the present invention. Referring toFIG. 9 , the whitelight emitting device 400 includes a blue/green LED 101 mounted in a cup-shaped reflecting recess of a package and an amber/red LED 150. Therefore, in this embodiment, two LEDs (the blue/green LED and the amber/red LED) emit a blue light beam B, a green light beam G, an amber light beam A and a red light beam R. Using only two LEDs to output white light having a wide spectrum with 4 wavelengths, the whitelight emitting device 400 has high efficiency and superior color reproducibility. -
FIG. 10 shows a light emission spectrum of the whitelight emitting device 400 shown inFIG. 9 . As shown inFIG. 10 , the whitelight emitting device 400 emits white light having a light emission spectrum with peak wavelengths at 458 nm, 525 nm, 590 nm and 640 nm, respectively. With the respective peak wavelengths in a wide visible ray region with 4 wavelengths, the whitelight emitting device 400 achieves high color reproducibility and a high color rendering index. -
FIG. 11 illustrates a white light emitting device according to still another embodiment of the present invention. Referring toFIG. 11 , the whitelight emitting device 500 includes a blue/green LED 170 mounted in a cup-shaped reflecting recess of a package and ared LED 102. Unlike in the aforedescribed embodiments, the blue/green LED 170 emits not only blue and green light but also amber light. That is, the blue/green LED 170 is a three-wavelength LED emitting blue, green and amber wavelengths of light. Such a three-wavelength LED can be realized by altering the In content of an InGaN layer in an active layer of multiple quantum well. - The blue light B, green light G and amber light A emitted from the blue/
green LED 170 and the red light R emitted from thered LED 102 are mixed to produce high-quality white light having a wide spectrum with 4 wavelengths. The light emission spectrum of the whitelight emitting device 500 is shown inFIG. 12 . As shown inFIG. 12 , the whitelight emitting device 500 has peak wavelengths at 450 nm, 500 nm, 570 nm and 635 nm, respectively to output high-quality white light with 4 wavelengths. - According to the present invention set forth above, the white light emitting device uses two or less LEDs to output white light having a wide spectrum with 4 wavelengths, thereby achieving superior color reproducibility and high efficiency.
- While the present invention has been shown and described in connection with the preferred embodiments, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
Priority Applications (1)
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US13/474,240 US8593063B2 (en) | 2005-12-27 | 2012-05-17 | White light emitting device |
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KR1020050130652A KR100771811B1 (en) | 2005-12-27 | 2005-12-27 | White light emitting device |
KR10-2005-0130652 | 2005-12-27 |
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US13/474,240 Division US8593063B2 (en) | 2005-12-27 | 2012-05-17 | White light emitting device |
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US20070159064A1 true US20070159064A1 (en) | 2007-07-12 |
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ID=38232153
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US11/600,107 Abandoned US20070159064A1 (en) | 2005-12-27 | 2006-11-16 | White light emitting device |
US13/474,240 Expired - Fee Related US8593063B2 (en) | 2005-12-27 | 2012-05-17 | White light emitting device |
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US13/474,240 Expired - Fee Related US8593063B2 (en) | 2005-12-27 | 2012-05-17 | White light emitting device |
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US (2) | US20070159064A1 (en) |
JP (2) | JP2007180507A (en) |
KR (1) | KR100771811B1 (en) |
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US20090167149A1 (en) * | 2007-12-26 | 2009-07-02 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US20100123855A1 (en) * | 2008-11-18 | 2010-05-20 | Kyung Ho Shin | Light emitting module and display device having the same |
US20100239745A1 (en) * | 2009-03-23 | 2010-09-23 | Wang Wadelee | Method of making pure white light source |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020030197A1 (en) * | 2000-03-10 | 2002-03-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
US20020070681A1 (en) * | 2000-05-31 | 2002-06-13 | Masanori Shimizu | Led lamp |
US20030063462A1 (en) * | 2001-05-24 | 2003-04-03 | Masanori Shimizu | Illumination light source |
US20030067773A1 (en) * | 1999-12-02 | 2003-04-10 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
US6730943B2 (en) * | 2000-04-12 | 2004-05-04 | Centre National De La Recherche Scientifique | Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device |
US20040089864A1 (en) * | 2002-11-08 | 2004-05-13 | Wu-Sheng Chi | Light emitting diode and method of making the same |
US7279716B2 (en) * | 2004-04-14 | 2007-10-09 | Genesis Photonics Inc. | Single-chip LED with three luminescent spectrums of red, blue and green wavelengths |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09298312A (en) * | 1996-05-08 | 1997-11-18 | Hitachi Cable Ltd | Multi-color light source |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
JP2000197759A (en) * | 1999-01-08 | 2000-07-18 | Sega Enterp Ltd | Game device |
JP4044261B2 (en) * | 2000-03-10 | 2008-02-06 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP2002057376A (en) * | 2000-05-31 | 2002-02-22 | Matsushita Electric Ind Co Ltd | Led lamp |
KR100416493B1 (en) * | 2000-12-20 | 2004-01-31 | 광주과학기술원 | White light emission device and the method thereof |
JP2003197968A (en) * | 2001-12-18 | 2003-07-11 | Shuko Cho | Package structure for full-color light emitting diode light source constituted by laminating chips directly coupled with each other via transparent conductive layers and reflective layers upon another |
US6655825B2 (en) * | 2001-12-28 | 2003-12-02 | Koninklijke Philips Electronics N.V. | White light source for LCD backlight |
JP2005005482A (en) * | 2003-06-12 | 2005-01-06 | Citizen Electronics Co Ltd | Led light emitting device and color display device using the same |
KR100631832B1 (en) * | 2003-06-24 | 2006-10-09 | 삼성전기주식회사 | White light emitting device and its manufacturing method |
US7066623B2 (en) * | 2003-12-19 | 2006-06-27 | Soo Ghee Lee | Method and apparatus for producing untainted white light using off-white light emitting diodes |
KR100658700B1 (en) * | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Light emitting device with RGB diodes and phosphor converter |
-
2005
- 2005-12-27 KR KR1020050130652A patent/KR100771811B1/en not_active IP Right Cessation
-
2006
- 2006-11-14 JP JP2006307458A patent/JP2007180507A/en active Pending
- 2006-11-16 US US11/600,107 patent/US20070159064A1/en not_active Abandoned
-
2010
- 2010-01-26 JP JP2010014474A patent/JP5311676B2/en not_active Expired - Fee Related
-
2012
- 2012-05-17 US US13/474,240 patent/US8593063B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030067773A1 (en) * | 1999-12-02 | 2003-04-10 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
US20020030197A1 (en) * | 2000-03-10 | 2002-03-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
US6730943B2 (en) * | 2000-04-12 | 2004-05-04 | Centre National De La Recherche Scientifique | Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device |
US20020070681A1 (en) * | 2000-05-31 | 2002-06-13 | Masanori Shimizu | Led lamp |
US20030063462A1 (en) * | 2001-05-24 | 2003-04-03 | Masanori Shimizu | Illumination light source |
US20040089864A1 (en) * | 2002-11-08 | 2004-05-13 | Wu-Sheng Chi | Light emitting diode and method of making the same |
US7279716B2 (en) * | 2004-04-14 | 2007-10-09 | Genesis Photonics Inc. | Single-chip LED with three luminescent spectrums of red, blue and green wavelengths |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100244740A1 (en) * | 2007-08-24 | 2010-09-30 | Photonic Developments Llc | Multi-chip light emitting diode light device |
US9374876B2 (en) * | 2007-08-24 | 2016-06-21 | Martin A. Alpert | Multi-chip light emitting diode light device |
US9587791B2 (en) | 2007-12-26 | 2017-03-07 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US10801677B2 (en) | 2007-12-26 | 2020-10-13 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US10156324B2 (en) | 2007-12-26 | 2018-12-18 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US8698387B2 (en) * | 2007-12-26 | 2014-04-15 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US9303830B2 (en) | 2007-12-26 | 2016-04-05 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US9217545B2 (en) | 2007-12-26 | 2015-12-22 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US8810126B2 (en) | 2007-12-26 | 2014-08-19 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US20090167149A1 (en) * | 2007-12-26 | 2009-07-02 | Olympus Corporation | Light source device and endoscope apparatus comprising the same |
US20100123855A1 (en) * | 2008-11-18 | 2010-05-20 | Kyung Ho Shin | Light emitting module and display device having the same |
US8446544B2 (en) * | 2008-11-18 | 2013-05-21 | Lg Innotek Co., Ltd. | Light emitting module and display device having the same |
US8670087B2 (en) | 2008-11-18 | 2014-03-11 | Lg Innotek Co., Ltd. | Light emitting module and display device having the same |
US20100239745A1 (en) * | 2009-03-23 | 2010-09-23 | Wang Wadelee | Method of making pure white light source |
US8071159B2 (en) * | 2009-03-23 | 2011-12-06 | Wade Lee Wang | Method of making pure white light source |
US8684540B2 (en) | 2009-06-25 | 2014-04-01 | Osram Opto Semiconductors Gmbh | Optical projection apparatus |
WO2010149539A1 (en) * | 2009-06-25 | 2010-12-29 | Osram Opto Semiconductors Gmbh | Optical projection apparatus comprising two light sources |
US9097392B2 (en) * | 2009-09-30 | 2015-08-04 | Osram Gmbh | Mixed light source |
US8823027B2 (en) * | 2009-09-30 | 2014-09-02 | Sumitomo Electric Industries, Ltd. | Light emitting device |
US20120305953A1 (en) * | 2009-09-30 | 2012-12-06 | Ralph Peter Bertram | Mixed Light Source |
WO2011038948A1 (en) * | 2009-09-30 | 2011-04-07 | Osram Opto Semiconductors Gmbh | Mixed light source |
US20110073892A1 (en) * | 2009-09-30 | 2011-03-31 | Sumitomo Electric Industries, Ltd. | Light emitting device |
EP2519971A1 (en) * | 2010-04-16 | 2012-11-07 | OSRAM Opto Semiconductors GmbH | Optoelectronic component and method for producing an optoelectronic component |
US8497629B2 (en) * | 2010-07-30 | 2013-07-30 | Everlight Electronics Co., Ltd. | Color-temperature-tunable device |
US8860300B2 (en) | 2010-07-30 | 2014-10-14 | Everlight Electronics Co., Ltd. | Color-temperature-tunable device |
US8944661B2 (en) | 2010-08-18 | 2015-02-03 | Sharp Kabushiki Kaisha | Lighting device, display device, and television device |
US20120099303A1 (en) * | 2010-10-26 | 2012-04-26 | Industrial Technology Research Institute | Cct modulating method, led light source module, and package structure thereof |
US20140209944A1 (en) * | 2011-07-28 | 2014-07-31 | MOX Inc | White led apparatus |
DE102012111564A1 (en) * | 2012-11-29 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Illumination device for lighting different materials e.g. newsprint, has white light comprising color rendering index and blue light portion, where peak wavelength of blue light portion is provided with specific nanometer |
WO2022179876A1 (en) * | 2021-02-23 | 2022-09-01 | Signify Holding B.V. | Narrow-band light system having a maximum color consistency across observers and test samples |
Also Published As
Publication number | Publication date |
---|---|
US20120223660A1 (en) | 2012-09-06 |
KR20070068709A (en) | 2007-07-02 |
JP2010093304A (en) | 2010-04-22 |
JP5311676B2 (en) | 2013-10-09 |
US8593063B2 (en) | 2013-11-26 |
KR100771811B1 (en) | 2007-10-30 |
JP2007180507A (en) | 2007-07-12 |
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