US20070159064A1 - White light emitting device - Google Patents

White light emitting device Download PDF

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Publication number
US20070159064A1
US20070159064A1 US11/600,107 US60010706A US2007159064A1 US 20070159064 A1 US20070159064 A1 US 20070159064A1 US 60010706 A US60010706 A US 60010706A US 2007159064 A1 US2007159064 A1 US 2007159064A1
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Prior art keywords
light emitting
white light
red
emitting device
blue
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US11/600,107
Inventor
Pun Jae Choi
Masayoshi Koike
Sang Yeob Song
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Samsung Electronics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD. reassignment SAMSUNG ELECTRO-MECHANICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOI, PUN JAE, KOIKE, MASAYOSHI, SONG, SANG YEOB
Publication of US20070159064A1 publication Critical patent/US20070159064A1/en
Assigned to SAMSUNG LED CO., LTD. reassignment SAMSUNG LED CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Priority to US13/474,240 priority Critical patent/US8593063B2/en
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG LED CO., LTD.
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a white light emitting device, and more particularly, to a white light emitting device using up to two LEDs to achieve superior color reproducibility and high efficiency.
  • a white LED apparatus is preferred over a conventional small-sized lamp or a fluorescent lamp as a backlight of a Liquid Crystal Display (LCD).
  • the white LED apparatus can be manufactured by forming a ceramic phosphor layer on a light exiting surface of a blue LED.
  • the most representative type of conventional white LED apparatus is realized by combining a GaN-based blue LED with YAG-based yellow phosphor.
  • the blue light emitted from the blue LED excites the phosphor to emit yellow light.
  • a mixture of blue light and yellow light is perceived as white light by the observer.
  • Such a white LED apparatus has advantages like relatively high efficiency and low costs but also drawbacks like mediocre color reproducibility.
  • FIG. 1 shows a light emission spectrum of a conventional white light emitting device manufactured by combining a GaN-based blue LED with YAG-based yellow phosphor. As shown in FIG. 1 , the light intensity is high in the blue and yellow regions but low in the green and red regions. Therefore, such a white light emitting device does not well express the green and red regions, thus having a mediocre color rendering index and color reproducibility.
  • a white light LED apparatus may be realized by combining blue, green and red LEDs.
  • FIG. 2 shows light emission spectrums of such a type of conventional white LED apparatuses composed of blue, green and red LEDs.
  • FIG. 2 shows light emission spectrums of white LED apparatuses with different correlated color temperatures.
  • Such white LED apparatuses have relatively good color reproducibility but with high power consumption and low efficiency.
  • these white LED apparatuses are not cost-effective with complex circuit configurations.
  • LEDs can be used to realize a white light emitting device by combining an ultraviolet LED (UV LED) with green/blue/red phosphor or a mixture of blue, green and red phosphors.
  • UV LED ultraviolet LED
  • Such a white light emitting device has superior color reproducibility with low costs, but is not yet commonly used and has low efficiency. Therefore, there exists a need for developing a white light emitting device which satisfies a need for high efficiency and high color reproducibility.
  • the present invention has been made to solve the foregoing problems of the prior art and therefore an object of certain embodiments of the present invention is to provide a high-quality white light emitting device having high efficiency and superior color reproducibility.
  • a white light emitting device including: a structure for emitting white light having at least four wavelengths by using two or less light emitting diodes (LEDs), wherein the LEDs comprise a blue/green LED emitting blue and green wavelengths of light; and the device comprising means for emitting red wavelength of light.
  • LEDs light emitting diodes
  • the blue/green LED may be an InGaN-based LED.
  • the red light emitting means may be an InGaAlP-based LED.
  • the red light emitting means may be red phosphor or a red Photon Recycling System (PRS).
  • PRS Red Photon Recycling System
  • the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, and a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm and a red peak wavelength in the range of 620 to 640 nm. More preferably, the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 450 to 460 nm, a green peak wavelength in the range of 505 to 515 nm, and a yellow peak wavelength in the range of 565 to 575 nm, and a red peak wavelength in the range of 630 to 640 nm. In this case, the white light has a color rendering index of at least 95.
  • the white light emitting device may further comprise yellow phosphor, wherein the red light emitting means may comprise at least one selected from a group consisting of a red LED, a red PRS and red phosphor.
  • the white light emitting device attains white light by mixing the blue, green, yellow and red colors.
  • the yellow phosphor has a peak wavelength in the range of 540 to 590 nm.
  • the red light emitting means may be an amber/red LED emitting amber and red wavelengths of light.
  • the white light emitting device attains white light by mixing the blue, green, amber and red colors.
  • the blue/green LED is adapted to emit amber wavelength of light along with blue and green wavelengths of light
  • the red light emitting means may be a red LED emitting red wavelength of light.
  • the white light emitting device uses two LEDs to attain white light by mixing the blue, green, amber and red colors.
  • FIG. 1 is a graph showing a light emission spectrum of a conventional white light emitting device according to the prior art
  • FIG. 2 is a graph showing light emission spectrums of another type of conventional light emitting devices according to the prior art
  • FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention.
  • FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 3 ;
  • FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to wavelength;
  • FIG. 6 is a schematic sectional view illustrating a white light emitting device according to another embodiment of the present invention.
  • FIG. 7 is a schematic sectional view illustrating a white light emitting device according to further another embodiment of the present invention.
  • FIG. 8 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 7 ;
  • FIG. 9 is a schematic sectional view illustrating a white light emitting device according to still another embodiment of the present invention.
  • FIG. 10 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 9 ;
  • FIG. 11 is a schematic sectional view illustrating a white light emitting device according to yet another embodiment of the present invention.
  • FIG. 12 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 11 .
  • FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention.
  • the white light emitting device 100 includes a blue/green LED 101 and a red LED 102 mounted in a cup-shaped reflecting recess 110 of a package and yellow phosphor 103 .
  • the blue/green LED 101 is a single chip emitting both blue wavelength of light B and green wavelength of light G.
  • the yellow phosphor 103 absorbs the light generated from the LED 101 to generate yellow light Y.
  • the red LED 102 generates red wavelength of light R.
  • the blue/green LED 101 is an InGaN-based LED and the red LED 102 is an InGaAlP-based LED.
  • the blue/green LED 101 and the red LED 102 are encapsulated by a light-transmitting resin 105 .
  • the yellow phosphor 103 powders are dispersed in the resin 105 .
  • the yellow phosphor 103 may be for example YAG-based yellow phosphor which absorbs the blue light to generate yellow light.
  • the YAG-based yellow phosphor 103 absorbs a portion of the output light of the blue/green LED 101 and generates the yellow light Y.
  • the yellow phosphor 103 emits light having a peak wavelength in the range of 540 to 590 nm.
  • the white light emitting device 100 outputs white light in a wide range of wavelength using the blue, green, yellow and red light beams generated from the LEDs 101 and 102 and the yellow phosphor 103 .
  • the white light emitting device 100 generates visible rays with 4 wavelengths using only two LEDs, thus improved in color reproducibility and efficiency at the same time.
  • the white light emitting device 100 emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm, and a red peak wavelength in the range of 620 to 640 nm. More preferably, the blue peak wavelength may range from 450 to 460 nm, the green peak wavelength may range from 505 to 515 nm, the yellow peak wavelength may range from 565 to 575 nm, and the red peak wavelength may range from 630 to 640 nm. This allows realizing a high-quality white light emitting device having a color rendering index of at least 95.
  • the white light emitting device 100 achieves a superior color rendering index (or color reproducibility) and improved power and light efficiency.
  • the blue/green LED 101 is an InGaN-based LED and the red LED 102 is an InGaAlP-based LED
  • the blue/green LED 101 may have a short peak wavelength of up to 470 nm and the red LED 102 may have a long peak wavelength of at least 620 nm to achieve further improved efficiency, which is confirmed as shown in FIG. 5 .
  • FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to the wavelength. As shown in FIG. 5 , the InGaN-based LED exhibits higher external quantum efficiency with a shorter wavelength (peak wavelength), and the InGaAlP-based LED exhibits higher external quantum efficiency with a longer wavelength (peak wavelength).
  • the white light emitting device can achieve high efficiency in an entire visible ray-region and high luminance of at least 50 lm/W.
  • FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 3 .
  • the white light emitting device 100 emits white light having peak wavelengths in the blue, green, yellow and red regions at 455 nm, 510 nm, 570 nm and 635 nm, respectively.
  • Such a wide visible ray spectrum with 4 wavelengths allows high color reproducibility and a high color rendering index, thereby resulting in a high-quality white light close to natural light.
  • FIG. 6 illustrates a white light emitting device according to another embodiment of the present invention.
  • the white light emitting device 200 according to this embodiment is distinguished from the previously described white light emitting device 100 in that it includes a red Photon Recycling System (PRS) 112 instead of the red LED.
  • PRS Red Photon Recycling System
  • the PRS like any phosphor, absorbs light from other light source to generate a different wavelength of light without any voltage applied.
  • the PRS is made of semiconductor material.
  • Such red PRS 112 is disposed on a light exiting surface of the blue/green LED 101 , absorbing the blue light (or green light) emitted from the LED 101 to generate red light R.
  • the white light emitting device 200 uses only one LED (blue/green LED 101 ) to output white light having a wide spectrum with 4 wavelengths, the white light emitting device 200 has high efficiency and superior color reproducibility.
  • FIG. 7 illustrates a white light emitting device 300 according to further another embodiment of the present invention.
  • the white light emitting device 300 according to this embodiment is distinguished from the previously described white light emitting device 100 in that it includes red phosphor 107 instead of the red LED.
  • the blue/green LED 101 , the yellow phosphor 103 and the red phosphor 107 emanate blue, green, yellow and red colors, respectively, thereby attaining a visible ray spectrum with 4 wavelengths. Similar to the aforedescribed embodiment, only one LED (blue/green LED 101 ) is used in the white light emitting device 300 in this embodiment to output white light with 4 wavelengths, achieving high efficiency and superior color reproducibility.
  • the red phosphor phosphor having a composition, Sr x Ca l-x S:Eu 2+ , where x is greater than or equal to 0 and less than or equal to 1, can be used.
  • the phosphor, Sr x Ca 1-x S:Eu 2+ absorbs blue light to emanate red light.
  • FIG. 8 shows a light emission spectrum of the white light emitting device 300 shown in FIG. 7 .
  • the light emission spectrum exhibits peak wavelengths in the blue, green, yellow and red regions at 450 nm, 493 nm, 570 nm and 615 nm, respectively. With the respective peak wavelengths in the 4 wavelength regions, the white light emitting device 300 achieves high color reproducibility and a high color rendering index.
  • FIG. 9 illustrates a white light emitting device according to yet another embodiment of the present invention.
  • the white light emitting device 400 includes a blue/green LED 101 mounted in a cup-shaped reflecting recess of a package and an amber/red LED 150 . Therefore, in this embodiment, two LEDs (the blue/green LED and the amber/red LED) emit a blue light beam B, a green light beam G, an amber light beam A and a red light beam R. Using only two LEDs to output white light having a wide spectrum with 4 wavelengths, the white light emitting device 400 has high efficiency and superior color reproducibility.
  • FIG. 10 shows a light emission spectrum of the white light emitting device 400 shown in FIG. 9 .
  • the white light emitting device 400 emits white light having a light emission spectrum with peak wavelengths at 458 nm, 525 nm, 590 nm and 640 nm, respectively. With the respective peak wavelengths in a wide visible ray region with 4 wavelengths, the white light emitting device 400 achieves high color reproducibility and a high color rendering index.
  • FIG. 11 illustrates a white light emitting device according to still another embodiment of the present invention.
  • the white light emitting device 500 includes a blue/green LED 170 mounted in a cup-shaped reflecting recess of a package and a red LED 102 .
  • the blue/green LED 170 emits not only blue and green light but also amber light. That is, the blue/green LED 170 is a three-wavelength LED emitting blue, green and amber wavelengths of light.
  • Such a three-wavelength LED can be realized by altering the In content of an InGaN layer in an active layer of multiple quantum well.
  • the blue light B, green light G and amber light A emitted from the blue/green LED 170 and the red light R emitted from the red LED 102 are mixed to produce high-quality white light having a wide spectrum with 4 wavelengths.
  • the light emission spectrum of the white light emitting device 500 is shown in FIG. 12 . As shown in FIG. 12 , the white light emitting device 500 has peak wavelengths at 450 nm, 500 nm, 570 nm and 635 nm, respectively to output high-quality white light with 4 wavelengths.
  • the white light emitting device uses two or less LEDs to output white light having a wide spectrum with 4 wavelengths, thereby achieving superior color reproducibility and high efficiency.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.

Description

    CLAIM OF PRIORITY
  • This application claims the benefit of Korean Patent Application No. 2005-130652 filed on Dec. 27, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a white light emitting device, and more particularly, to a white light emitting device using up to two LEDs to achieve superior color reproducibility and high efficiency.
  • 2. Description of the Related Art
  • In general, a white LED apparatus is preferred over a conventional small-sized lamp or a fluorescent lamp as a backlight of a Liquid Crystal Display (LCD). The white LED apparatus can be manufactured by forming a ceramic phosphor layer on a light exiting surface of a blue LED.
  • The most representative type of conventional white LED apparatus is realized by combining a GaN-based blue LED with YAG-based yellow phosphor. The blue light emitted from the blue LED excites the phosphor to emit yellow light. A mixture of blue light and yellow light is perceived as white light by the observer. Such a white LED apparatus has advantages like relatively high efficiency and low costs but also drawbacks like mediocre color reproducibility.
  • FIG. 1 shows a light emission spectrum of a conventional white light emitting device manufactured by combining a GaN-based blue LED with YAG-based yellow phosphor. As shown in FIG. 1, the light intensity is high in the blue and yellow regions but low in the green and red regions. Therefore, such a white light emitting device does not well express the green and red regions, thus having a mediocre color rendering index and color reproducibility.
  • Alternatively, a white light LED apparatus may be realized by combining blue, green and red LEDs. FIG. 2 shows light emission spectrums of such a type of conventional white LED apparatuses composed of blue, green and red LEDs. In particular, FIG. 2 shows light emission spectrums of white LED apparatuses with different correlated color temperatures. Such white LED apparatuses have relatively good color reproducibility but with high power consumption and low efficiency. Moreover, these white LED apparatuses are not cost-effective with complex circuit configurations.
  • As a further alternative, LEDs can be used to realize a white light emitting device by combining an ultraviolet LED (UV LED) with green/blue/red phosphor or a mixture of blue, green and red phosphors. Such a white light emitting device has superior color reproducibility with low costs, but is not yet commonly used and has low efficiency. Therefore, there exists a need for developing a white light emitting device which satisfies a need for high efficiency and high color reproducibility.
  • SUMMARY OF THE INVENTION
  • The present invention has been made to solve the foregoing problems of the prior art and therefore an object of certain embodiments of the present invention is to provide a high-quality white light emitting device having high efficiency and superior color reproducibility.
  • According to an aspect of the invention for realizing the object, there is provided a white light emitting device including: a structure for emitting white light having at least four wavelengths by using two or less light emitting diodes (LEDs), wherein the LEDs comprise a blue/green LED emitting blue and green wavelengths of light; and the device comprising means for emitting red wavelength of light.
  • The blue/green LED may be an InGaN-based LED. Also the red light emitting means may be an InGaAlP-based LED. Alternatively, the red light emitting means may be red phosphor or a red Photon Recycling System (PRS).
  • Preferably, the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, and a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm and a red peak wavelength in the range of 620 to 640 nm. More preferably, the white light emitting device emits white light having a light emission spectrum with a blue peak wavelength in the range of 450 to 460 nm, a green peak wavelength in the range of 505 to 515 nm, and a yellow peak wavelength in the range of 565 to 575 nm, and a red peak wavelength in the range of 630 to 640 nm. In this case, the white light has a color rendering index of at least 95.
  • According to an embodiment of the present invention, the white light emitting device may further comprise yellow phosphor, wherein the red light emitting means may comprise at least one selected from a group consisting of a red LED, a red PRS and red phosphor. In this case, the white light emitting device attains white light by mixing the blue, green, yellow and red colors. Preferably, the yellow phosphor has a peak wavelength in the range of 540 to 590 nm.
  • According to another embodiment of the present invention, the red light emitting means may be an amber/red LED emitting amber and red wavelengths of light. In this case, the white light emitting device attains white light by mixing the blue, green, amber and red colors.
  • According to further another embodiment of the present invention, the blue/green LED is adapted to emit amber wavelength of light along with blue and green wavelengths of light, and the red light emitting means may be a red LED emitting red wavelength of light. In this case, the white light emitting device uses two LEDs to attain white light by mixing the blue, green, amber and red colors.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a graph showing a light emission spectrum of a conventional white light emitting device according to the prior art;
  • FIG. 2 is a graph showing light emission spectrums of another type of conventional light emitting devices according to the prior art;
  • FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention;
  • FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 3;
  • FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to wavelength;
  • FIG. 6 is a schematic sectional view illustrating a white light emitting device according to another embodiment of the present invention;
  • FIG. 7 is a schematic sectional view illustrating a white light emitting device according to further another embodiment of the present invention;
  • FIG. 8 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 7;
  • FIG. 9 is a schematic sectional view illustrating a white light emitting device according to still another embodiment of the present invention;
  • FIG. 10 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 9;
  • FIG. 11 is a schematic sectional view illustrating a white light emitting device according to yet another embodiment of the present invention; and
  • FIG. 12 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 11.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The invention may however be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes and dimensions may be exaggerated for clarity, and the same reference numerals are used throughout to designate the same or like parts.
  • FIG. 3 is a schematic sectional view illustrating a white light emitting device according to an embodiment of the present invention. Referring to FIG. 3, the white light emitting device 100 includes a blue/green LED 101 and a red LED 102 mounted in a cup-shaped reflecting recess 110 of a package and yellow phosphor 103. The blue/green LED 101 is a single chip emitting both blue wavelength of light B and green wavelength of light G. The yellow phosphor 103 absorbs the light generated from the LED 101 to generate yellow light Y. The red LED 102 generates red wavelength of light R. Preferably, the blue/green LED 101 is an InGaN-based LED and the red LED 102 is an InGaAlP-based LED.
  • The blue/green LED 101 and the red LED 102 are encapsulated by a light-transmitting resin 105. The yellow phosphor 103 powders are dispersed in the resin 105. The yellow phosphor 103 may be for example YAG-based yellow phosphor which absorbs the blue light to generate yellow light. In this case, the YAG-based yellow phosphor 103 absorbs a portion of the output light of the blue/green LED 101 and generates the yellow light Y. Preferably, the yellow phosphor 103 emits light having a peak wavelength in the range of 540 to 590 nm.
  • The white light emitting device 100 with the above described configuration outputs white light in a wide range of wavelength using the blue, green, yellow and red light beams generated from the LEDs 101 and 102 and the yellow phosphor 103. Particularly, the white light emitting device 100 generates visible rays with 4 wavelengths using only two LEDs, thus improved in color reproducibility and efficiency at the same time.
  • To realize white light having a color rendering index of at least 90, it is preferable that the white light emitting device 100 emits white light having a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm, and a red peak wavelength in the range of 620 to 640 nm. More preferably, the blue peak wavelength may range from 450 to 460 nm, the green peak wavelength may range from 505 to 515 nm, the yellow peak wavelength may range from 565 to 575 nm, and the red peak wavelength may range from 630 to 640 nm. This allows realizing a high-quality white light emitting device having a color rendering index of at least 95.
  • With each of the peak wavelengths in each of the above preferable wavelength ranges, the white light emitting device 100 achieves a superior color rendering index (or color reproducibility) and improved power and light efficiency. In particular, in the case where the blue/green LED 101 is an InGaN-based LED and the red LED 102 is an InGaAlP-based LED, the blue/green LED 101 may have a short peak wavelength of up to 470 nm and the red LED 102 may have a long peak wavelength of at least 620 nm to achieve further improved efficiency, which is confirmed as shown in FIG. 5.
  • FIG. 5 is a graph showing external quantum efficiency of an InGaN-based LED and an InGaAlP-based LED with respect to the wavelength. As shown in FIG. 5, the InGaN-based LED exhibits higher external quantum efficiency with a shorter wavelength (peak wavelength), and the InGaAlP-based LED exhibits higher external quantum efficiency with a longer wavelength (peak wavelength). Using YAG-based phosphor generating a yellow region of light together with an InGaN-based blue/green LED having a peak wavelength of up to 470 nm and an InGaAlP-based red LED having a peak wavelength of at least 620 nm, the white light emitting device can achieve high efficiency in an entire visible ray-region and high luminance of at least 50 lm/W.
  • FIG. 4 is a graph showing a light emission spectrum of the white light emitting device shown in FIG. 3. As shown in FIG. 4, the white light emitting device 100 emits white light having peak wavelengths in the blue, green, yellow and red regions at 455 nm, 510 nm, 570 nm and 635 nm, respectively. Such a wide visible ray spectrum with 4 wavelengths allows high color reproducibility and a high color rendering index, thereby resulting in a high-quality white light close to natural light.
  • FIG. 6 illustrates a white light emitting device according to another embodiment of the present invention. As shown in FIG. 6, the white light emitting device 200 according to this embodiment is distinguished from the previously described white light emitting device 100 in that it includes a red Photon Recycling System (PRS) 112 instead of the red LED.
  • In general, the PRS, like any phosphor, absorbs light from other light source to generate a different wavelength of light without any voltage applied. However, unlike the phosphor, the PRS is made of semiconductor material. Such red PRS 112 is disposed on a light exiting surface of the blue/green LED 101, absorbing the blue light (or green light) emitted from the LED 101 to generate red light R. Using only one LED (blue/green LED 101) to output white light having a wide spectrum with 4 wavelengths, the white light emitting device 200 has high efficiency and superior color reproducibility.
  • FIG. 7 illustrates a white light emitting device 300 according to further another embodiment of the present invention. The white light emitting device 300 according to this embodiment is distinguished from the previously described white light emitting device 100 in that it includes red phosphor 107 instead of the red LED.
  • As shown in FIG. 7, the blue/green LED 101, the yellow phosphor 103 and the red phosphor 107 emanate blue, green, yellow and red colors, respectively, thereby attaining a visible ray spectrum with 4 wavelengths. Similar to the aforedescribed embodiment, only one LED (blue/green LED 101) is used in the white light emitting device 300 in this embodiment to output white light with 4 wavelengths, achieving high efficiency and superior color reproducibility. For the red phosphor, phosphor having a composition, SrxCal-xS:Eu2+, where x is greater than or equal to 0 and less than or equal to 1, can be used. The phosphor, SrxCa1-xS:Eu2+ absorbs blue light to emanate red light.
  • FIG. 8 shows a light emission spectrum of the white light emitting device 300 shown in FIG. 7. As shown in FIG. 8, the light emission spectrum exhibits peak wavelengths in the blue, green, yellow and red regions at 450 nm, 493 nm, 570 nm and 615 nm, respectively. With the respective peak wavelengths in the 4 wavelength regions, the white light emitting device 300 achieves high color reproducibility and a high color rendering index.
  • FIG. 9 illustrates a white light emitting device according to yet another embodiment of the present invention. Referring to FIG. 9, the white light emitting device 400 includes a blue/green LED 101 mounted in a cup-shaped reflecting recess of a package and an amber/red LED 150. Therefore, in this embodiment, two LEDs (the blue/green LED and the amber/red LED) emit a blue light beam B, a green light beam G, an amber light beam A and a red light beam R. Using only two LEDs to output white light having a wide spectrum with 4 wavelengths, the white light emitting device 400 has high efficiency and superior color reproducibility.
  • FIG. 10 shows a light emission spectrum of the white light emitting device 400 shown in FIG. 9. As shown in FIG. 10, the white light emitting device 400 emits white light having a light emission spectrum with peak wavelengths at 458 nm, 525 nm, 590 nm and 640 nm, respectively. With the respective peak wavelengths in a wide visible ray region with 4 wavelengths, the white light emitting device 400 achieves high color reproducibility and a high color rendering index.
  • FIG. 11 illustrates a white light emitting device according to still another embodiment of the present invention. Referring to FIG. 11, the white light emitting device 500 includes a blue/green LED 170 mounted in a cup-shaped reflecting recess of a package and a red LED 102. Unlike in the aforedescribed embodiments, the blue/green LED 170 emits not only blue and green light but also amber light. That is, the blue/green LED 170 is a three-wavelength LED emitting blue, green and amber wavelengths of light. Such a three-wavelength LED can be realized by altering the In content of an InGaN layer in an active layer of multiple quantum well.
  • The blue light B, green light G and amber light A emitted from the blue/green LED 170 and the red light R emitted from the red LED 102 are mixed to produce high-quality white light having a wide spectrum with 4 wavelengths. The light emission spectrum of the white light emitting device 500 is shown in FIG. 12. As shown in FIG. 12, the white light emitting device 500 has peak wavelengths at 450 nm, 500 nm, 570 nm and 635 nm, respectively to output high-quality white light with 4 wavelengths.
  • According to the present invention set forth above, the white light emitting device uses two or less LEDs to output white light having a wide spectrum with 4 wavelengths, thereby achieving superior color reproducibility and high efficiency.
  • While the present invention has been shown and described in connection with the preferred embodiments, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (12)

1. A white light emitting device comprising: a structure for emitting white light having at least four wavelengths by using two or less light emitting diodes (LEDs),
wherein the LEDs comprise a blue/green LED emitting blue and green wavelengths of light; and
the device comprising red light emitting means.
2. The white light emitting device according to claim 1, wherein the blue/green LED comprises an InGaN-based LED.
3. The white light emitting device according to claim 1, wherein the red light emitting means comprises an InGaAlP-based LED.
4. The white light emitting device according to claim 1, wherein the red light emitting means comprises red phosphor.
5. The white light emitting device according to claim 1, wherein the red light emitting means comprises a red Photon Recycling System (PRS).
6. The white light emitting device according to claim 1, the white light has a light emission spectrum with a blue peak wavelength in the range of 440 to 470 nm, and a green peak wavelength in the range of 500 to 530 nm, a yellow peak wavelength in the range of 560 to 580 nm and a red peak wavelength in the range of 620 to 640 nm.
7. The white light emitting device according to claim 1, the white light has a light emission spectrum with a blue peak wavelength in the range of 450 to 460 nm, a green peak wavelength in the range of 505 to 515 nm, and a yellow peak wavelength in the range of 565 to 575 nm, and a red peak wavelength in the range of 630 to 640 nm.
8. The white light emitting device according to claim 7, the white light has a color rendering index of at least 95.
9. The white light emitting device according to claim 1, further comprising yellow phosphor,
wherein the red light emitting means comprises at least one selected from a group consisting of a red LED, a red PRS and red phosphor.
10. The white light emitting device according to claim 9, wherein the yellow phosphor has a peak wavelength in the range of 540 to 590 nm.
11. The white light emitting device according to claim 1, wherein the red light emitting means comprises an amber/red LED emitting amber and red wavelengths of light.
12. The white light emitting device according to claim 1, wherein the blue/green LED is adapted to emit amber wavelength of light along with blue and green wavelengths of light, and
the red light emitting means comprises a red LED emitting red wavelength of light.
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090167149A1 (en) * 2007-12-26 2009-07-02 Olympus Corporation Light source device and endoscope apparatus comprising the same
US20100123855A1 (en) * 2008-11-18 2010-05-20 Kyung Ho Shin Light emitting module and display device having the same
US20100239745A1 (en) * 2009-03-23 2010-09-23 Wang Wadelee Method of making pure white light source
US20100244740A1 (en) * 2007-08-24 2010-09-30 Photonic Developments Llc Multi-chip light emitting diode light device
WO2010149539A1 (en) * 2009-06-25 2010-12-29 Osram Opto Semiconductors Gmbh Optical projection apparatus comprising two light sources
US20110073892A1 (en) * 2009-09-30 2011-03-31 Sumitomo Electric Industries, Ltd. Light emitting device
WO2011038948A1 (en) * 2009-09-30 2011-04-07 Osram Opto Semiconductors Gmbh Mixed light source
US20120099303A1 (en) * 2010-10-26 2012-04-26 Industrial Technology Research Institute Cct modulating method, led light source module, and package structure thereof
EP2519971A1 (en) * 2010-04-16 2012-11-07 OSRAM Opto Semiconductors GmbH Optoelectronic component and method for producing an optoelectronic component
US8497629B2 (en) * 2010-07-30 2013-07-30 Everlight Electronics Co., Ltd. Color-temperature-tunable device
DE102012111564A1 (en) * 2012-11-29 2014-06-18 Osram Opto Semiconductors Gmbh Illumination device for lighting different materials e.g. newsprint, has white light comprising color rendering index and blue light portion, where peak wavelength of blue light portion is provided with specific nanometer
US20140209944A1 (en) * 2011-07-28 2014-07-31 MOX Inc White led apparatus
US8944661B2 (en) 2010-08-18 2015-02-03 Sharp Kabushiki Kaisha Lighting device, display device, and television device
WO2022179876A1 (en) * 2021-02-23 2022-09-01 Signify Holding B.V. Narrow-band light system having a maximum color consistency across observers and test samples

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2195864A4 (en) 2007-08-27 2010-10-13 Lg Electronics Inc Light emitting device package and lighting apparatus using the same
JP2010092993A (en) * 2008-10-06 2010-04-22 Sharp Corp Illuminating apparatus
CN101881381B (en) * 2009-05-05 2012-09-05 宁波晶科光电有限公司 White light emitting diode and white light emitting diode lamp
US8508127B2 (en) 2010-03-09 2013-08-13 Cree, Inc. High CRI lighting device with added long-wavelength blue color
TWI422073B (en) * 2010-05-26 2014-01-01 Interlight Optotech Corp Light emitting diode package structure
US8884508B2 (en) 2011-11-09 2014-11-11 Cree, Inc. Solid state lighting device including multiple wavelength conversion materials
JP5923734B2 (en) * 2011-12-16 2016-05-25 パナソニックIpマネジメント株式会社 Lighting device
CN204717395U (en) * 2014-11-19 2015-10-21 史伯梅 LED luminescence unit
CN204879502U (en) * 2014-11-19 2015-12-16 史伯梅 LED luminescence unit
TWI577042B (en) * 2015-07-15 2017-04-01 南臺科技大學 Light emitting diode chip and data trasmission and recepition apparatus

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020030197A1 (en) * 2000-03-10 2002-03-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20020070681A1 (en) * 2000-05-31 2002-06-13 Masanori Shimizu Led lamp
US20030063462A1 (en) * 2001-05-24 2003-04-03 Masanori Shimizu Illumination light source
US20030067773A1 (en) * 1999-12-02 2003-04-10 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US6730943B2 (en) * 2000-04-12 2004-05-04 Centre National De La Recherche Scientifique Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
US20040089864A1 (en) * 2002-11-08 2004-05-13 Wu-Sheng Chi Light emitting diode and method of making the same
US7279716B2 (en) * 2004-04-14 2007-10-09 Genesis Photonics Inc. Single-chip LED with three luminescent spectrums of red, blue and green wavelengths

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298312A (en) * 1996-05-08 1997-11-18 Hitachi Cable Ltd Multi-color light source
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JP2000197759A (en) * 1999-01-08 2000-07-18 Sega Enterp Ltd Game device
JP4044261B2 (en) * 2000-03-10 2008-02-06 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP2002057376A (en) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Led lamp
KR100416493B1 (en) * 2000-12-20 2004-01-31 광주과학기술원 White light emission device and the method thereof
JP2003197968A (en) * 2001-12-18 2003-07-11 Shuko Cho Package structure for full-color light emitting diode light source constituted by laminating chips directly coupled with each other via transparent conductive layers and reflective layers upon another
US6655825B2 (en) * 2001-12-28 2003-12-02 Koninklijke Philips Electronics N.V. White light source for LCD backlight
JP2005005482A (en) * 2003-06-12 2005-01-06 Citizen Electronics Co Ltd Led light emitting device and color display device using the same
KR100631832B1 (en) * 2003-06-24 2006-10-09 삼성전기주식회사 White light emitting device and its manufacturing method
US7066623B2 (en) * 2003-12-19 2006-06-27 Soo Ghee Lee Method and apparatus for producing untainted white light using off-white light emitting diodes
KR100658700B1 (en) * 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Light emitting device with RGB diodes and phosphor converter

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030067773A1 (en) * 1999-12-02 2003-04-10 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US20020030197A1 (en) * 2000-03-10 2002-03-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US6730943B2 (en) * 2000-04-12 2004-05-04 Centre National De La Recherche Scientifique Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device
US20020070681A1 (en) * 2000-05-31 2002-06-13 Masanori Shimizu Led lamp
US20030063462A1 (en) * 2001-05-24 2003-04-03 Masanori Shimizu Illumination light source
US20040089864A1 (en) * 2002-11-08 2004-05-13 Wu-Sheng Chi Light emitting diode and method of making the same
US7279716B2 (en) * 2004-04-14 2007-10-09 Genesis Photonics Inc. Single-chip LED with three luminescent spectrums of red, blue and green wavelengths

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244740A1 (en) * 2007-08-24 2010-09-30 Photonic Developments Llc Multi-chip light emitting diode light device
US9374876B2 (en) * 2007-08-24 2016-06-21 Martin A. Alpert Multi-chip light emitting diode light device
US9587791B2 (en) 2007-12-26 2017-03-07 Olympus Corporation Light source device and endoscope apparatus comprising the same
US10801677B2 (en) 2007-12-26 2020-10-13 Olympus Corporation Light source device and endoscope apparatus comprising the same
US10156324B2 (en) 2007-12-26 2018-12-18 Olympus Corporation Light source device and endoscope apparatus comprising the same
US8698387B2 (en) * 2007-12-26 2014-04-15 Olympus Corporation Light source device and endoscope apparatus comprising the same
US9303830B2 (en) 2007-12-26 2016-04-05 Olympus Corporation Light source device and endoscope apparatus comprising the same
US9217545B2 (en) 2007-12-26 2015-12-22 Olympus Corporation Light source device and endoscope apparatus comprising the same
US8810126B2 (en) 2007-12-26 2014-08-19 Olympus Corporation Light source device and endoscope apparatus comprising the same
US20090167149A1 (en) * 2007-12-26 2009-07-02 Olympus Corporation Light source device and endoscope apparatus comprising the same
US20100123855A1 (en) * 2008-11-18 2010-05-20 Kyung Ho Shin Light emitting module and display device having the same
US8446544B2 (en) * 2008-11-18 2013-05-21 Lg Innotek Co., Ltd. Light emitting module and display device having the same
US8670087B2 (en) 2008-11-18 2014-03-11 Lg Innotek Co., Ltd. Light emitting module and display device having the same
US20100239745A1 (en) * 2009-03-23 2010-09-23 Wang Wadelee Method of making pure white light source
US8071159B2 (en) * 2009-03-23 2011-12-06 Wade Lee Wang Method of making pure white light source
US8684540B2 (en) 2009-06-25 2014-04-01 Osram Opto Semiconductors Gmbh Optical projection apparatus
WO2010149539A1 (en) * 2009-06-25 2010-12-29 Osram Opto Semiconductors Gmbh Optical projection apparatus comprising two light sources
US9097392B2 (en) * 2009-09-30 2015-08-04 Osram Gmbh Mixed light source
US8823027B2 (en) * 2009-09-30 2014-09-02 Sumitomo Electric Industries, Ltd. Light emitting device
US20120305953A1 (en) * 2009-09-30 2012-12-06 Ralph Peter Bertram Mixed Light Source
WO2011038948A1 (en) * 2009-09-30 2011-04-07 Osram Opto Semiconductors Gmbh Mixed light source
US20110073892A1 (en) * 2009-09-30 2011-03-31 Sumitomo Electric Industries, Ltd. Light emitting device
EP2519971A1 (en) * 2010-04-16 2012-11-07 OSRAM Opto Semiconductors GmbH Optoelectronic component and method for producing an optoelectronic component
US8497629B2 (en) * 2010-07-30 2013-07-30 Everlight Electronics Co., Ltd. Color-temperature-tunable device
US8860300B2 (en) 2010-07-30 2014-10-14 Everlight Electronics Co., Ltd. Color-temperature-tunable device
US8944661B2 (en) 2010-08-18 2015-02-03 Sharp Kabushiki Kaisha Lighting device, display device, and television device
US20120099303A1 (en) * 2010-10-26 2012-04-26 Industrial Technology Research Institute Cct modulating method, led light source module, and package structure thereof
US20140209944A1 (en) * 2011-07-28 2014-07-31 MOX Inc White led apparatus
DE102012111564A1 (en) * 2012-11-29 2014-06-18 Osram Opto Semiconductors Gmbh Illumination device for lighting different materials e.g. newsprint, has white light comprising color rendering index and blue light portion, where peak wavelength of blue light portion is provided with specific nanometer
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