US20070032180A1 - Slurry residence time enhancement system - Google Patents

Slurry residence time enhancement system Download PDF

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Publication number
US20070032180A1
US20070032180A1 US11/199,607 US19960705A US2007032180A1 US 20070032180 A1 US20070032180 A1 US 20070032180A1 US 19960705 A US19960705 A US 19960705A US 2007032180 A1 US2007032180 A1 US 2007032180A1
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US
United States
Prior art keywords
slurry
polishing
polishing pad
residence time
enhancement system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/199,607
Inventor
Chien Hwang
Yu-Liang Lin
Chia-Ming Yang
Cheng Chan
Jean Wang
Chen-Hua Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority to US11/199,607 priority Critical patent/US20070032180A1/en
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAN, CHENG HSUN, HWANG, JERRY, LIN, YU-LIANG, WANG, JEAN, YANG, CHIA-MING, YU, CHEN-HUA
Publication of US20070032180A1 publication Critical patent/US20070032180A1/en
Abandoned legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces

Definitions

  • the present invention relates to chemical mechanical polishers used for polishing semiconductor wafers in the semiconductor fabrication industry. More particularly, the present invention relates to a slurry conservation system for reducing waste of polishing slurry by increasing the slurry utilization rate in a chemical mechanical polishing (CMP) apparatus.
  • CMP chemical mechanical polishing
  • Such apparatus normally includes a polishing head which carries a membrane for engaging and forcing a semiconductor wafer against a wetted polishing surface, such as a polishing pad. Either the pad or the polishing head is rotated and oscillates the wafer over the polishing surface. The polishing head is forced downwardly onto the polishing surface by a pressurized air system or similar arrangement. The downward force pressing the polishing head against the polishing surface can be adjusted as desired.
  • the polishing head is typically mounted on an elongated pivoting carrier arm, which can move the pressure head between several operative positions. In one operative position, the carrier arm positions a wafer mounted on the pressure head in contact with the polishing pad.
  • the carrier arm In order to remove the wafer from contact with the polishing surface, the carrier arm is first pivoted upwardly to lift the pressure head and wafer from the polishing surface. The carrier arm is then pivoted laterally to move the pressure head and wafer carried by the pressure head to an auxiliary wafer processing station.
  • the auxiliary processing station may include, for example, a station for cleaning the wafer and/or polishing head, a wafer unload station, or a wafer load station.
  • CMP apparatus chemical-mechanical polishing apparatus
  • a pneumatically-actuated polishing head CMP apparatus is used primarily for polishing the front face or device side of a semiconductor wafer during the fabrication of semiconductor devices on the wafer.
  • a wafer is “planarized” or smoothed one or more times during a fabrication process in order for the top surface of the wafer to be as flat as possible.
  • a wafer is polished by being placed on a carrier and pressed face down onto a polishing pad covered with a slurry of colloidal silica or alumina in deionized water.
  • a slurry residence time enhancement system is needed for reducing waste of polishing slurry by increasing the slurry utilization rate in a chemical mechanical polishing (CMP) apparatus.
  • the present invention is generally directed to a slurry residence time enhancement system for a chemical mechanical polishing apparatus having a base, a platen on the base, a polishing pad on the platen and a polishing head over the polishing pad.
  • the system includes at least one slurry distribution unit having a slurry distribution member for positioning on the polishing pad.
  • the slurry distribution member redirects polishing slurry on the polishing pad to the polishing head.
  • the system may alternatively or additionally include a rim for upward extension from the base and a seal for insertion between the platen and the polishing pad adjacent to the rim.
  • FIG. 1 is a perspective view of an illustrative embodiment of the slurry residence time enhancement system according to the present invention
  • FIG. 2 is a perspective view of a slurry distributor of the slurry residence time enhancement system
  • FIGS. 3A-3D are schematic views of a chemical mechanical polishing (CMP) apparatus, in implementation of the slurry residence time enhancement system according to the present invention.
  • CMP chemical mechanical polishing
  • FIG. 4 is a perspective sectional view of a CMP apparatus, illustrating a seal between the polishing pad and rim of the apparatus.
  • an illustrative embodiment of the slurry residence time enhancement system hereinafter system, according to the present invention is generally indicated by reference numeral 10 .
  • the system 10 is shown in conjunction with a rotary-type chemical mechanical polishing (CMP) apparatus 12 , which may be conventional.
  • the CMP apparatus 12 includes a circular base 14 .
  • a platen 17 is mounted for rotation on the base 14 , and a motor (not shown) which is typically provided in the base 14 engages and rotates the platen 17 in operation of the CMP apparatus 10 .
  • a polishing pad 18 is supported by the platen 17 .
  • a polishing head 24 is supported over the polishing pad 18 for holding and pressing a wafer (not shown) against the polishing pad 18 as the polishing pad 18 is rotated by the platen 17 .
  • a slurry delivery arm 26 ( FIGS. 3A-3D ), having a pair of nozzles 26 a , is extendible over the polishing pad 18 to dispense a polishing slurry 28 onto the polishing pad 18 during polishing of a wafer (not shown) mounted on the bottom of the polishing head 24 .
  • the slurry residence time enhancement system 10 includes at least one, and preferably, a pair of slurry distribution units 30 which are provided in conjunction with the CMP apparatus 12 .
  • each slurry distribution unit 30 typically includes a base 32 from which extends a support conduit 34 .
  • An arm tee 36 includes a vertical segment 38 which is inserted and secured in the support conduit 34 typically using multiple fasteners and a horizontal segment 40 which extends generally perpendicularly from the vertical segment 38 .
  • a support arm 42 extends generally horizontally from the horizontal segment 40 .
  • a slurry distribution member 48 is mounted on the support arm 42 . Accordingly, a sleeve 44 is provided on the extending end of the support arm 42 , and an insert 46 , to which is mounted the slurry distribution member 48 , extends into the sleeve 44 .
  • the insert 46 is mounted in the sleeve 44 typically using multiple fasteners (not shown) or other suitable technique.
  • the slurry distribution member 48 typically includes a generally elongated, arcuate or semicircular upper segment 52 , from which the insert 46 extends, and a generally elongated, arcuate or semicircular lower segment 50 which is secured to the upper segment 52 typically using multiple fasteners 54 or alternative technique.
  • a tapered end portion 51 terminates each end of the lower segment 51 .
  • Each slurry distribution member 48 includes a concave side 49 a and a convex side 49 b and typically has a curvature equal to that of a circle having a diameter of about 12 inches.
  • the slurry residence time enhancement system 10 includes at least one, and preferably, a pair of the slurry distribution units 30 , each of which is positioned adjacent to the base 14 of the CMP apparatus 12 .
  • the support arm 42 extends over the rim 16 and the polishing pad 18 of the CMP apparatus 12 .
  • the slurry distribution member 48 suspended from the support arm 42 , contacts the polishing pad 18 .
  • the concave side 49 a of each slurry distribution member 48 is oriented against the direction of rotation
  • the convex side 49 b of each slurry distribution member 48 is oriented with the direction of rotation, of the polishing pad 18 during polishing of a wafer on the polishing polishing head 24 .
  • the slurry residence time enhancement system 10 may further include a rim 16 which extends upwardly from the base 14 , around the circumference of the base 14 , and a liquid-tight seal 20 which is provided between the platen 17 and the polishing pad 18 , adjacent to the rim 16 .
  • the rim 16 has a height of at least about 6 mm and the seal 20 has a width of at least about 0.5 mm and may be offset with respect to the base 14 , as further shown in FIG. 4 .
  • the CMP apparatus 12 is operated typically in the conventional fashion. Accordingly, a wafer (not shown) is mounted on the bottom surface of the polishing head 24 . As the polishing slurry 28 is dispensed from the nozzles 26 a of the slurry dispensing arm 26 , onto the polishing pad 18 , as shown in FIG. 3A , the polishing pad 18 and the polishing head 24 are rotated typically in the counterclockwise direction, as indicated by the arrows.
  • the polishing head 24 presses the wafer against the polishing pad 18 .
  • the polishing slurry 28 on the polishing pad 18 contacts the wafer on the polishing head 24 and facilitates polishing of the wafer.
  • the polishing slurry 28 may be continually dispensed from the slurry delivery arm 26 to ensure adequate contact of the polishing slurry with the rotating wafer throughout the chemical mechanical polishing operation. Consequently, were it not for the presence of the slurry distribution members 48 , the polishing slurry 28 would have a tendency to gradually accumulate at the edge of the polishing pad 18 , as shown in FIG. 3C , due to centrifugal force.
  • the polishing pad 18 rotates the polishing slurry 28 into contact with the concave surface 49 a of each slurry distribution member 48 , causing the polishing slurry 28 to accumulate in the concave surface 49 a of the slurry distribution member 48 , as shown in FIG. 3D .
  • the slurry distribution members 48 redistribute or redirect the accumulated polishing slurry 28 to the polishing head 24 and ensure continued polishing of the wafer without requiring the dispensing of additional polishing slurry 28 from the slurry dispensing arm 26 and onto the polishing pad 18 .

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A slurry residence time enhancement system for a chemical mechanical polishing apparatus having a base, a platen on the base, a polishing pad on the platen and a polishing head over the polishing pad is disclosed. The system includes at least one slurry distribution unit having a slurry distribution member for positioning on the polishing pad. In operation of the CMP apparatus, the slurry distribution member redirects polishing slurry on the polishing pad to the polishing head. The system may alternatively or additionally include a rim for upward extension from the base and a seal for insertion between the platen and the polishing pad adjacent to the rim.

Description

  • FIELD OF THE INVENTION
  • The present invention relates to chemical mechanical polishers used for polishing semiconductor wafers in the semiconductor fabrication industry. More particularly, the present invention relates to a slurry conservation system for reducing waste of polishing slurry by increasing the slurry utilization rate in a chemical mechanical polishing (CMP) apparatus.
  • BACKGROUND OF THE INVENTION
  • Apparatus for polishing thin, flat semiconductor wafers are well-known in the art. Such apparatus normally includes a polishing head which carries a membrane for engaging and forcing a semiconductor wafer against a wetted polishing surface, such as a polishing pad. Either the pad or the polishing head is rotated and oscillates the wafer over the polishing surface. The polishing head is forced downwardly onto the polishing surface by a pressurized air system or similar arrangement. The downward force pressing the polishing head against the polishing surface can be adjusted as desired. The polishing head is typically mounted on an elongated pivoting carrier arm, which can move the pressure head between several operative positions. In one operative position, the carrier arm positions a wafer mounted on the pressure head in contact with the polishing pad. In order to remove the wafer from contact with the polishing surface, the carrier arm is first pivoted upwardly to lift the pressure head and wafer from the polishing surface. The carrier arm is then pivoted laterally to move the pressure head and wafer carried by the pressure head to an auxiliary wafer processing station. The auxiliary processing station may include, for example, a station for cleaning the wafer and/or polishing head, a wafer unload station, or a wafer load station.
  • More recently, chemical-mechanical polishing (CMP) apparatus has been employed in combination with a pneumatically-actuated polishing head. CMP apparatus is used primarily for polishing the front face or device side of a semiconductor wafer during the fabrication of semiconductor devices on the wafer. A wafer is “planarized” or smoothed one or more times during a fabrication process in order for the top surface of the wafer to be as flat as possible. A wafer is polished by being placed on a carrier and pressed face down onto a polishing pad covered with a slurry of colloidal silica or alumina in deionized water.
  • In current CMP apparatuses, about 90% of the polishing slurry is not utilized to polish wafers, and therefore, is wasted. Accordingly, a slurry residence time enhancement system is needed for reducing waste of polishing slurry by increasing the slurry utilization rate in a chemical mechanical polishing (CMP) apparatus.
  • SUMMARY OF THE INVENTION
  • The present invention is generally directed to a slurry residence time enhancement system for a chemical mechanical polishing apparatus having a base, a platen on the base, a polishing pad on the platen and a polishing head over the polishing pad. The system includes at least one slurry distribution unit having a slurry distribution member for positioning on the polishing pad. In operation of the CMP apparatus, the slurry distribution member redirects polishing slurry on the polishing pad to the polishing head. The system may alternatively or additionally include a rim for upward extension from the base and a seal for insertion between the platen and the polishing pad adjacent to the rim.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
  • FIG. 1 is a perspective view of an illustrative embodiment of the slurry residence time enhancement system according to the present invention;
  • FIG. 2 is a perspective view of a slurry distributor of the slurry residence time enhancement system;
  • FIGS. 3A-3D are schematic views of a chemical mechanical polishing (CMP) apparatus, in implementation of the slurry residence time enhancement system according to the present invention; and
  • FIG. 4 is a perspective sectional view of a CMP apparatus, illustrating a seal between the polishing pad and rim of the apparatus.
  • DETAILED DESCRIPTION OF THE INVENTION
  • Referring to the drawings, an illustrative embodiment of the slurry residence time enhancement system, hereinafter system, according to the present invention is generally indicated by reference numeral 10. The system 10 is shown in conjunction with a rotary-type chemical mechanical polishing (CMP) apparatus 12, which may be conventional. The CMP apparatus 12 includes a circular base 14. A platen 17 is mounted for rotation on the base 14, and a motor (not shown) which is typically provided in the base 14 engages and rotates the platen 17 in operation of the CMP apparatus 10. A polishing pad 18 is supported by the platen 17. A polishing head 24 is supported over the polishing pad 18 for holding and pressing a wafer (not shown) against the polishing pad 18 as the polishing pad 18 is rotated by the platen 17. A slurry delivery arm 26 (FIGS. 3A-3D), having a pair of nozzles 26 a, is extendible over the polishing pad 18 to dispense a polishing slurry 28 onto the polishing pad 18 during polishing of a wafer (not shown) mounted on the bottom of the polishing head 24.
  • As shown in FIG. 1, the slurry residence time enhancement system 10 includes at least one, and preferably, a pair of slurry distribution units 30 which are provided in conjunction with the CMP apparatus 12. As shown in FIG. 2, each slurry distribution unit 30 typically includes a base 32 from which extends a support conduit 34. An arm tee 36 includes a vertical segment 38 which is inserted and secured in the support conduit 34 typically using multiple fasteners and a horizontal segment 40 which extends generally perpendicularly from the vertical segment 38. A support arm 42 extends generally horizontally from the horizontal segment 40.
  • A slurry distribution member 48 is mounted on the support arm 42. Accordingly, a sleeve 44 is provided on the extending end of the support arm 42, and an insert 46, to which is mounted the slurry distribution member 48, extends into the sleeve 44. The insert 46 is mounted in the sleeve 44 typically using multiple fasteners (not shown) or other suitable technique. The slurry distribution member 48 typically includes a generally elongated, arcuate or semicircular upper segment 52, from which the insert 46 extends, and a generally elongated, arcuate or semicircular lower segment 50 which is secured to the upper segment 52 typically using multiple fasteners 54 or alternative technique. A tapered end portion 51 terminates each end of the lower segment 51. Each slurry distribution member 48 includes a concave side 49 a and a convex side 49 b and typically has a curvature equal to that of a circle having a diameter of about 12 inches.
  • As shown in FIG. 1, the slurry residence time enhancement system 10 includes at least one, and preferably, a pair of the slurry distribution units 30, each of which is positioned adjacent to the base 14 of the CMP apparatus 12. The support arm 42 extends over the rim 16 and the polishing pad 18 of the CMP apparatus 12. The slurry distribution member 48, suspended from the support arm 42, contacts the polishing pad 18. As shown in FIG. 3A, the concave side 49 a of each slurry distribution member 48 is oriented against the direction of rotation, and the convex side 49 b of each slurry distribution member 48 is oriented with the direction of rotation, of the polishing pad 18 during polishing of a wafer on the polishing polishing head 24. As shown in FIG. 4, the slurry residence time enhancement system 10 may further include a rim 16 which extends upwardly from the base 14, around the circumference of the base 14, and a liquid-tight seal 20 which is provided between the platen 17 and the polishing pad 18, adjacent to the rim 16. Preferably, the rim 16 has a height of at least about 6 mm and the seal 20 has a width of at least about 0.5 mm and may be offset with respect to the base 14, as further shown in FIG. 4.
  • Referring next to FIGS. 3A-3D, in typical use of the slurry residence time enhancement system 10, the CMP apparatus 12 is operated typically in the conventional fashion. Accordingly, a wafer (not shown) is mounted on the bottom surface of the polishing head 24. As the polishing slurry 28 is dispensed from the nozzles 26 a of the slurry dispensing arm 26, onto the polishing pad 18, as shown in FIG. 3A, the polishing pad 18 and the polishing head 24 are rotated typically in the counterclockwise direction, as indicated by the arrows.
  • As it rotates, the polishing head 24 presses the wafer against the polishing pad 18. Simultaneously, as shown in FIG. 3B, the polishing slurry 28 on the polishing pad 18 contacts the wafer on the polishing head 24 and facilitates polishing of the wafer. The polishing slurry 28 may be continually dispensed from the slurry delivery arm 26 to ensure adequate contact of the polishing slurry with the rotating wafer throughout the chemical mechanical polishing operation. Consequently, were it not for the presence of the slurry distribution members 48, the polishing slurry 28 would have a tendency to gradually accumulate at the edge of the polishing pad 18, as shown in FIG. 3C, due to centrifugal force. However, the polishing pad 18 rotates the polishing slurry 28 into contact with the concave surface 49 a of each slurry distribution member 48, causing the polishing slurry 28 to accumulate in the concave surface 49 a of the slurry distribution member 48, as shown in FIG. 3D. Furthermore, the slurry distribution members 48 redistribute or redirect the accumulated polishing slurry 28 to the polishing head 24 and ensure continued polishing of the wafer without requiring the dispensing of additional polishing slurry 28 from the slurry dispensing arm 26 and onto the polishing pad 18. This increases the utilization rate of the polishing slurry 28 by increasing the residence time of the polishing slurry 28 on the polishing pad 18, thereby preventing wasting of the polishing slurry 28 throughout the chemical mechanical polishing operation. Also, the seal 20 prevents the polishing slurry 28 from rotating off of the platen 17 due to the centrifugal force acting on the polishing slurry 28 as it is rotated on the polishing pad 18.
  • While the preferred embodiments of the invention have been described, it will be recognized and understood that various modifications can be made in the invention and the appended claims are intended to cover all such modifications which may fall within the spirit and scope of the invention.

Claims (22)

1. A slurry residence time enhancement system for a chemical mechanical polishing apparatus having a base, a platen on the base, a polishing pad on the platen and a polishing head over the polishing pad, comprising:
at least one slurry distribution unit having a slurry distribution member for positioning on said polishing pad and redirecting polishing slurry on said polishing pad to said polishing heads;
wherein said slurry distribution member comprises a generally semicircular configuration with a concave side, said concave side oriented against a direction of rotation of said polishing pad.
2. The slurry residence time enhancement system of claim 1 wherein said at least one slurry distribution unit comprises a pair of slurry distribution units.
3. (canceled)
4. The slurry residence time enhancement system of claim 1 wherein said slurry distribution member corresponds to a curvature of a circle having a diameter of about 12 inches.
5. The slurry residence time enhancement system of claim 1 wherein said slurry distribution member comprises an upper segment and a lower segment carried by said upper segment.
6. The slurry residence time enhancement system of claim 5 wherein said lower segment has tapered ends.
7. The slurry residence time enhancement system of claim 1 wherein said at least one slurry distribution unit comprises a base and a support arm carried by said base, and wherein said slurry distribution member is carried by said support arm.
8. The slurry residence time enhancement system of claim 7 wherein said slurry distribution member comprises a generally semicircular upper segment carried by said support arm and a generally semicircular lower segment carried by said upper segment.
9. A slurry residence time enhancement system for a chemical mechanical polishing apparatus having a base, a platen on the base, a polishing pad on the platen and a polishing head over the polishing pad, comprising:
a slurry distribution member comprising a generally semicircular configuration with a concave side, said concave side oriented against a direction of rotation of said platen and said polishing pad;
a rim extending upward from the base around the circumference of the base; and
a seal between the platen and the polishing pad adjacent to said rim.
10. The slurry residence time enhancement system of claim 9 wherein said rim has a height of at least about 6 mm.
11. The slurry residence time enhancement system of claim 9 wherein said seal has a width of at least about 0.5 mm.
12. The slurry residence time enhancement system of claim 9 wherein said rim is offset with respect to said base.
13. A slurry residence time enhancement system for a chemical mechanical polishing apparatus having a base, a platen on the base, a polishing pad on the platen and a polishing head over the polishing pad, comprising:
at least one slurry distribution unit having a slurry distribution member for positioning on the polishing pad and redirecting polishing slurry on the polishing pad to the polishing head;
a slurry delivery arm positioned over said polishing pad for dispensing slurry on said polishing pad;
a rim extending upward from the base around the circumference of the base; and
a seal for insertion between the platen and the polishing pad adjacent to said rim;
wherein said slurry distribution member comprises a generally semicircular configuration with a concave side, said concave side oriented against a direction of rotation of said polishing pad and positioned in said direction of rotation between said slurry delivery arm and said polishing head.
14. The slurry residence time enhancement system of claim 13 wherein said at least one slurry distribution unit comprises a pair of slurry distribution units.
15. (canceled)
16. The slurry residence time enhancement system of claim 13 wherein said at least one slurry distribution unit comprises a base and a support arm carried by said base, and wherein said slurry distribution member is carried by said support arm.
17. The slurry residence time enhancement system of claim 13 wherein said slurry distribution member comprises a generally semicircular upper segment carried by said support arm and a generally semicircular lower segment carried by said upper segment.
18. The slurry distribution time enhancement system of claim 17 wherein said lower segment has tapered ends.
19. The slurry residence time enhancement system of claim 13 wherein said rim has a height of at least about 6 mm.
20. The slurry residence time enhancement system of claim 13 wherein said seal has a width of at least about 0.5 mm.
21. The slurry residence time enhancement system of claim 1, further comprising a slurry delivery arm positioned over said polishing pad for dispensing said slurry on said polishing pad wherein said at least one slurry distribution unit is positioned between said slurry delivery arm and said polishing head in said direction of rotation.
22. The slurry residence time enhancement system of claim 1, wherein said slurry distribution member is positioned adjacent an said polishing pad edge to intercept and redirect said slurry from said polishing pad edge toward said polishing head.
US11/199,607 2005-08-08 2005-08-08 Slurry residence time enhancement system Abandoned US20070032180A1 (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN103072071A (en) * 2012-12-31 2013-05-01 厦门通士达照明有限公司 Grinding device
JP2015120229A (en) * 2013-12-25 2015-07-02 国立大学法人九州大学 Workpiece polishing device

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US5709593A (en) * 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US6280299B1 (en) * 1997-06-24 2001-08-28 Applied Materials, Inc. Combined slurry dispenser and rinse arm
US6283840B1 (en) * 1999-08-03 2001-09-04 Applied Materials, Inc. Cleaning and slurry distribution system assembly for use in chemical mechanical polishing apparatus
US6429131B2 (en) * 1999-03-18 2002-08-06 Infineon Technologies Ag CMP uniformity
US6439967B2 (en) * 1998-09-01 2002-08-27 Micron Technology, Inc. Microelectronic substrate assembly planarizing machines and methods of mechanical and chemical-mechanical planarization of microelectronic substrate assemblies
US6887132B2 (en) * 2001-09-10 2005-05-03 Multi Planar Technologies Incorporated Slurry distributor for chemical mechanical polishing apparatus and method of using the same
US6890245B1 (en) * 2002-04-24 2005-05-10 Lam Research Corporation Byproduct control in linear chemical mechanical planarization system

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US5709593A (en) * 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US6051499A (en) * 1995-10-27 2000-04-18 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US5645682A (en) * 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
US6280299B1 (en) * 1997-06-24 2001-08-28 Applied Materials, Inc. Combined slurry dispenser and rinse arm
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US6429131B2 (en) * 1999-03-18 2002-08-06 Infineon Technologies Ag CMP uniformity
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US6887132B2 (en) * 2001-09-10 2005-05-03 Multi Planar Technologies Incorporated Slurry distributor for chemical mechanical polishing apparatus and method of using the same
US6890245B1 (en) * 2002-04-24 2005-05-10 Lam Research Corporation Byproduct control in linear chemical mechanical planarization system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103072071A (en) * 2012-12-31 2013-05-01 厦门通士达照明有限公司 Grinding device
JP2015120229A (en) * 2013-12-25 2015-07-02 国立大学法人九州大学 Workpiece polishing device

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AS Assignment

Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD., TAIWA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HWANG, JERRY;LIN, YU-LIANG;YANG, CHIA-MING;AND OTHERS;REEL/FRAME:016878/0218

Effective date: 20050622

STCB Information on status: application discontinuation

Free format text: EXPRESSLY ABANDONED -- DURING EXAMINATION