US20060292713A1 - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit device Download PDFInfo
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- US20060292713A1 US20060292713A1 US11/511,417 US51141706A US2006292713A1 US 20060292713 A1 US20060292713 A1 US 20060292713A1 US 51141706 A US51141706 A US 51141706A US 2006292713 A1 US2006292713 A1 US 2006292713A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000008707 rearrangement Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 23
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
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- H01L2924/14—Integrated circuits
Definitions
- This invention relates to a semiconductor integrated circuit, and more particularly to the configuration of an input/output circuit cell.
- a flip-chip LSI has the following arrangement.
- Probing pads are arranged on the periphery of a chip.
- LSI peripheral circuit elements are arranged at a certain pitch in-an area inside the probing pads.
- the LSI peripheral circuit elements include an input/output circuit cell, a power supply cell for an input/output circuit for supplying a power supply voltage to the input/output circuit, and another power supply cell for an LSI internal logic circuit for supplying a power supply voltage to the LSI internal logic circuit.
- a cell region for the LSI internal logic circuit and others is arranged inside the LSI peripheral circuit elements.
- the power supply lines for supplying a power supply voltage to drive these circuit elements include a power supply line for the LSI peripheral circuit located above the LSI peripheral circuit elements and another power supply line for the LSI internal logic circuit arranged on the periphery of the LSI internal logic circuit. These power supply lines are electrically isolated from one another.
- a flip-chip package may be e.g. a package including a ball grid array (BGA) formed on a stiffener.
- BGA ball grid array
- the timings of supplying a power supply voltage to each of the circuit elements within the LSI chip include a product testing timing as well as an operating timing.
- the product test includes a probing test at a wafer step and a test at a step of finished products after assembled. In the case of the test at a step of finished products after assembled, the product is operated at actual using frequency to test the input/output timing of a signal.
- both the LSI peripheral circuit element and the LSI internal logic circuit must be supplied with a sufficient power supply voltage.
- the degree of integration continues to increase.
- the number of input terminals also continues to increase.
- the pad pitch is limited to about 120 ⁇ m under the present conditions in view of the operability of probing test or bonding. This is one problem which obstructs high degree of integration.
- the staggered arrangement requires a wider pad region than a “single row arrangement” and is structured so that an internal circuit is separated from the pad region, which provides an empty region. This led to a limitation in the reduction of the chip size.
- the conventional semiconductor device is under the restriction in the arrangement of the probing pads. This has been a great problem which obstructs the high degree of integration.
- An object of this invention is to provide a semiconductor device which can be downsized and integrated to a high degree, and provides good and sure operability of probing test.
- this invention provides a semiconductor device including a rewiring characterized by mixedly comprising: an input/output (I/O) cell connected to a probing pad; and another input/output (I/O) cell having no probing pad.
- Some input/output cells do not necessarily require the probing pad. Therefore, these input/output cells are not provided with the probing pad. For this reason, the pitch of arranging the cells can be increased by the extent of the input/output cells provided with no probing pad. Thus, the degree of integration can be improved without reducing packaging operability.
- the semiconductor device is characterized by further comprising a DRAM.
- the memory array which is problematic in the characteristic is cut by breaking fuse and others, and connected to a spare redundant circuit so that it is relieved.
- the semiconductor device is characterized by further comprising a fuse element. If it is found by the test using the probing pad that the characteristic is problematic, redundancy relief and characteristic adjustment (trimming) can be easily carried out by breaking the fuse element.
- the semiconductor device may lack a probing pad on at least one side. If the input/output circuit(s) provided with no probing pad is arranged on this side, the entire area on this side where the probing pad is formed can be reduced.
- the probing pads may be arranged in a staggered manner.
- the input/output circuit cells are connected to the probing pads for probing test and connected to the terminal pads for external connection.
- the monitoring of inputting or outputting a test pattern and power supply are carried out so that one of circuit blocks is subjected to probing test.
- a signal and power are supplied from the package pins (terminals) connected to the terminal pads to drive the other of the circuit blocks.
- a semiconductor device with a small IR drop can be provided without increasing the chip area.
- the plurality of circuit blocks include an internal logic circuit block of a semiconductor integrated circuit and an input/output circuit block on the periphery. These circuit blocks are connected to the probing pads for probing test and terminal pads for external connection through the above input/output circuit cells. In the testing, from the probing pads, the monitoring of inputting or outputting a test pattern and power supply are carried out so that one of the circuit blocks is subjected to probing test. In driving, a signal and power are supplied from the package connected to the terminal pads to drive the internal logic circuit block.
- the probing pads are arranged on the surface of the semiconductor integrated chip.
- the terminal pads are preferably connected to the internal logic circuit block connected to the input/output circuit cells through contacts formed in an insulating film overlying the probing pads.
- the probing pads are preferably arranged on the surface of the edge of the semiconductor integrated circuit chip. This permits the chip area to be employed effectively.
- the semiconductor integrated circuit device is preferably an flip-chip LSI provided with a rearrangement wiring on the surface and connected to a packaging substrate by face-down bonding.
- FIG. 1 is a plan view for explaining an LSI according to the first embodiment of this invention.
- FIG. 2 is a manufacturing flowchart of the LSI according to the first embodiment of this invention.
- FIG. 3 is a manufacturing flowchart of the LSI according to the first embodiment of this invention.
- FIG. 4 is a manufacturing flowchart of the LSI according to the first embodiment of this invention.
- FIG. 5 is a manufacturing flowchart of the LSI according to the first embodiment of this invention.
- FIG. 6 is a manufacturing flowchart of the LSI according to the first embodiment of this invention.
- FIG. 7 is a manufacturing flowchart of the LSI according to the second embodiment of this invention.
- FIG. 8 is a manufacturing flowchart of the LSI according to the third embodiment of this invention.
- FIG. 9 is a schematic view of a flip-chip LSI according to a prior art.
- An LSI chip 1 as seen from FIG. 1 which is a schematic view thereof and FIG. 5 which is a sectional view of the main part, includes probing pads 2 on the outer periphery of the chip; first input/output circuits 3 S connected to the probing pads, respectively, inside them; second input/output circuit cells 3 n connected between these input/output cells and provided with no probing pad; rearrangement wirings 5 layered on these first and second input/output cells; and terminal pads formed on the rearrangement wirings and an element region 6 .
- the element region constitutes a DRAM.
- input/output cells and power supply cells 1 a are formed in the I/O cell regions in the surface of a silicon substrate 1 , and DRAMs 1 b are formed on an element region (internal circuit region R 2 ).
- a first layer aluminum wiring is formed for these DRAMs so as to be brought into contact with contacts 12 formed in an interlayer insulating film 11 .
- a second layer aluminum wiring is formed through contacts 13 so as to constitute probing pads 2 and rearrangement wiring pads 2 P. The regions among wiring patterns and among wiring layers are covered with an interlayer insulating film.
- contact holes are formed in the interlayer insulating layer to expose the probing pads 2 . Using the probes, a probing test is carried out.
- a fuse layer is cut as shown in FIG. 4 .
- an insulating protective film 21 is applied to protect the surface.
- solder bumps 4 are formed through barrier metals 9 .
- the probing pad 2 was formed for every other input/output circuit.
- one probing pad 2 is connected for four input/output circuits.
- the width of the input/output cell is reduced to half in that in the first embodiment.
- the number of bumps is increased so that the number of terminals usable in the test after sealing can be increased, thereby realizing “high speed multi-pin”.
- the probing pad 2 was formed for every other input/output circuit in each of four sides.
- the probing pad 2 is formed for every other input/output circuit, whereas in the remaining one side, no probing is formed.
- the cell area can be greatly reduced.
- a down-sized LSI can be formed without deteriorating its performance.
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
To provide a semiconductor device which can be down-sized and integrated to a high degree. A semiconductor device including a rewiring mixedly includes an input/output (I/O) cell connected to a probing pad; and another input/output (I/O) cell having no probing pad.
Description
- 1. Field of the Invention
- This invention relates to a semiconductor integrated circuit, and more particularly to the configuration of an input/output circuit cell.
- 2. Description of the Related Art
- Generally, a flip-chip LSI has the following arrangement. Probing pads are arranged on the periphery of a chip. LSI peripheral circuit elements are arranged at a certain pitch in-an area inside the probing pads. The LSI peripheral circuit elements include an input/output circuit cell, a power supply cell for an input/output circuit for supplying a power supply voltage to the input/output circuit, and another power supply cell for an LSI internal logic circuit for supplying a power supply voltage to the LSI internal logic circuit. A cell region for the LSI internal logic circuit and others is arranged inside the LSI peripheral circuit elements.
- Further, on the surface of the chip,
rearrangement wirings 5 for connecting the terminal pads and the LSI are arranged. The power supply lines for supplying a power supply voltage to drive these circuit elements include a power supply line for the LSI peripheral circuit located above the LSI peripheral circuit elements and another power supply line for the LSI internal logic circuit arranged on the periphery of the LSI internal logic circuit. These power supply lines are electrically isolated from one another. Incidentally, a flip-chip package may be e.g. a package including a ball grid array (BGA) formed on a stiffener. - The timings of supplying a power supply voltage to each of the circuit elements within the LSI chip include a product testing timing as well as an operating timing. The product test includes a probing test at a wafer step and a test at a step of finished products after assembled. In the case of the test at a step of finished products after assembled, the product is operated at actual using frequency to test the input/output timing of a signal. In this case, for the purpose of evaluating the performance of the LSI chip in terms of its function and characteristic, both the LSI peripheral circuit element and the LSI internal logic circuit must be supplied with a sufficient power supply voltage.
- In recent years, with the development of large-scaling of LSI, the degree of integration continues to increase. The number of input terminals also continues to increase. However, as regards the
probing pads 2, the pad pitch is limited to about 120 μm under the present conditions in view of the operability of probing test or bonding. This is one problem which obstructs high degree of integration. - This problem can be solved by a “staggered arrangement” in which a plurality of input/
output circuits 3 are arranged at a pitch lager than half the pad pitch permitting bonding and a plurality ofprobing pads 2 are arranged at a pitch larger than the pad pitch permitting bonding on the region on the side of the chip periphery and on thecell region 6 on the side of the chip center with respect to the plurality of input/output circuits, respectively. (JP-A-10-284611) - However, the staggered arrangement requires a wider pad region than a “single row arrangement” and is structured so that an internal circuit is separated from the pad region, which provides an empty region. This led to a limitation in the reduction of the chip size.
- As described above, the conventional semiconductor device is under the restriction in the arrangement of the probing pads. This has been a great problem which obstructs the high degree of integration.
- Further, if the bit width of data is increased in order to perform the high speed data transfer, the number of input/output circuit cells is increased. This led to the problem of increasing the number of the power supply cells for the input/output circuits to supply the power to these input/output cells.
- This invention has been accomplished under the circumstance described above. An object of this invention is to provide a semiconductor device which can be downsized and integrated to a high degree, and provides good and sure operability of probing test.
- In order to attain the above object, this invention provides a semiconductor device including a rewiring characterized by mixedly comprising: an input/output (I/O) cell connected to a probing pad; and another input/output (I/O) cell having no probing pad.
- Some input/output cells do not necessarily require the probing pad. Therefore, these input/output cells are not provided with the probing pad. For this reason, the pitch of arranging the cells can be increased by the extent of the input/output cells provided with no probing pad. Thus, the degree of integration can be improved without reducing packaging operability.
- Further, the semiconductor device is characterized by further comprising a DRAM.
- In the case of the DRAM, if it is found by the test using the probing pad that the characteristic is problematic, the memory array which is problematic in the characteristic is cut by breaking fuse and others, and connected to a spare redundant circuit so that it is relieved.
- The semiconductor device is characterized by further comprising a fuse element. If it is found by the test using the probing pad that the characteristic is problematic, redundancy relief and characteristic adjustment (trimming) can be easily carried out by breaking the fuse element.
- The semiconductor device may lack a probing pad on at least one side. If the input/output circuit(s) provided with no probing pad is arranged on this side, the entire area on this side where the probing pad is formed can be reduced.
- Further, in the semiconductor device according to this invention, the probing pads may be arranged in a staggered manner.
- The input/output circuit cells are connected to the probing pads for probing test and connected to the terminal pads for external connection. In the test, from the probing pads, the monitoring of inputting or outputting a test pattern and power supply are carried out so that one of circuit blocks is subjected to probing test. In the testing at the stage of the final product after assembled, a signal and power are supplied from the package pins (terminals) connected to the terminal pads to drive the other of the circuit blocks.
- Thus, in a probing test, a semiconductor device with a small IR drop can be provided without increasing the chip area.
- The plurality of circuit blocks include an internal logic circuit block of a semiconductor integrated circuit and an input/output circuit block on the periphery. These circuit blocks are connected to the probing pads for probing test and terminal pads for external connection through the above input/output circuit cells. In the testing, from the probing pads, the monitoring of inputting or outputting a test pattern and power supply are carried out so that one of the circuit blocks is subjected to probing test. In driving, a signal and power are supplied from the package connected to the terminal pads to drive the internal logic circuit block.
- The probing pads are arranged on the surface of the semiconductor integrated chip. The terminal pads are preferably connected to the internal logic circuit block connected to the input/output circuit cells through contacts formed in an insulating film overlying the probing pads.
- The probing pads are preferably arranged on the surface of the edge of the semiconductor integrated circuit chip. This permits the chip area to be employed effectively.
- The semiconductor integrated circuit device is preferably an flip-chip LSI provided with a rearrangement wiring on the surface and connected to a packaging substrate by face-down bonding.
-
FIG. 1 is a plan view for explaining an LSI according to the first embodiment of this invention. -
FIG. 2 is a manufacturing flowchart of the LSI according to the first embodiment of this invention. -
FIG. 3 is a manufacturing flowchart of the LSI according to the first embodiment of this invention. -
FIG. 4 is a manufacturing flowchart of the LSI according to the first embodiment of this invention. -
FIG. 5 is a manufacturing flowchart of the LSI according to the first embodiment of this invention. -
FIG. 6 is a manufacturing flowchart of the LSI according to the first embodiment of this invention. -
FIG. 7 is a manufacturing flowchart of the LSI according to the second embodiment of this invention. -
FIG. 8 is a manufacturing flowchart of the LSI according to the third embodiment of this invention. -
FIG. 9 is a schematic view of a flip-chip LSI according to a prior art. - Now referring to the drawings, an explanation will be given of an embodiment of this invention. First, the arrangement of the cells and their operation will be explained.
- An
LSI chip 1 according to this invention, as seen fromFIG. 1 which is a schematic view thereof andFIG. 5 which is a sectional view of the main part, includes probingpads 2 on the outer periphery of the chip; first input/output circuits 3S connected to the probing pads, respectively, inside them; second input/output circuit cells 3 n connected between these input/output cells and provided with no probing pad;rearrangement wirings 5 layered on these first and second input/output cells; and terminal pads formed on the rearrangement wirings and anelement region 6. - It should be noted that the element region constitutes a DRAM.
- An explanation will be given of a manufacturing process of the
LSI chip 1. - First, as seen from
FIG. 2 , input/output cells andpower supply cells 1 a are formed in the I/O cell regions in the surface of asilicon substrate 1, andDRAMs 1 b are formed on an element region (internal circuit region R2). A first layer aluminum wiring is formed for these DRAMs so as to be brought into contact withcontacts 12 formed in aninterlayer insulating film 11. A second layer aluminum wiring is formed throughcontacts 13 so as to constitute probingpads 2 andrearrangement wiring pads 2P. The regions among wiring patterns and among wiring layers are covered with an interlayer insulating film. - As seen from
FIG. 3 , contact holes are formed in the interlayer insulating layer to expose the probingpads 2. Using the probes, a probing test is carried out. - If the probing test determines that the DRAM characteristic is problematic, a fuse layer is cut as shown in
FIG. 4 . - Further, as seen from
FIG. 5 , an insulating protective film 21 is applied to protect the surface. - Finally, contacts are made on the insulating film 21 to form
rearrangement wirings 5. Solder bumps 4 are formed throughbarrier metals 9. - In accordance with such a configuration, only the input/output circuits 3S which require the probing pads are provided with probing pads, whereas the other input/output circuit are not provided with no probing pad. For this reason, in the semiconductor device according to this invention, the element area can be reduced without reducing the performance.
- Incidentally, in the previous embodiment, the probing
pad 2 was formed for every other input/output circuit. In this second embodiment, as seen fromFIG. 7 , one probingpad 2 is connected for four input/output circuits. - In this configuration, the width of the input/output cell is reduced to half in that in the first embodiment. Thus, the number of bumps is increased so that the number of terminals usable in the test after sealing can be increased, thereby realizing “high speed multi-pin”.
- In the first embodiment, the probing
pad 2 was formed for every other input/output circuit in each of four sides. On the other hand, in this third embodiment, as seen fromFIG. 8 , in three sides of the four sides, the probingpad 2 is formed for every other input/output circuit, whereas in the remaining one side, no probing is formed. In accordance with this embodiment, the cell area can be greatly reduced. - In accordance with this invention, a down-sized LSI can be formed without deteriorating its performance.
Claims (3)
1-4. (canceled)
5. A manufacturing method of a semiconductor integrated circuit device, the semiconductor integrated circuit device comprising:
a silicon substrate;
a plurality of internal circuits each formed on an element region of the silicon substrate;
a first input/output (I/O) cell formed on an I/O cell region of the silicon substrate, the first I/O cell including a first I/O circuit, a first electrode portion horizontally spaced apart from the first I/O circuit with respect to the silicon substrate and a second electrode portion formed on the first I/O circuit, the first electrode portion and the second electrode portion electrically connected to each other and electrically connected to a fuse element included in a DRAM of the plurality of internal circuits;
a second I/O cell formed on the I/O cell region of the silicon substrate, the second I/O cell including a second I/O circuit and a third electrode portion formed on the second I/O circuit, the third electrode portion electrically connected to a second internal circuit of the plurality of internal circuits; and
an interlayer insulating film formed on the plurality of internal circuits, the first I/O cell and the second I/O cell and exposing the first electrode portion as a probing pad, the second electrode portion as a first terminal pad and the third electrode portion as a second terminal pad,
the manufacturing method comprising the steps of:
cutting the fuse element via the probing pad when the DRAM characteristic is problematic;
forming an insulating protective film on a surface of the interlayer insulating film so that the insulating protective film covers the probing pad from above with respect to the silicon substrate and exposes the first terminal pad and the second terminal pad;
forming a rearranged wiring on a surface of the insulating protective film so that the rearrangement wiring electrically connects to either the first terminal pad or the second terminal pad; and
forming a solder bump on the rearrangement wiring.
6. The manufacturing method according to claim 5 , further comprising the step of forming a barrier metal layer between the solder bump and a surface of the rearrangement wiring.
Priority Applications (1)
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US11/511,417 US20060292713A1 (en) | 2003-03-28 | 2006-08-29 | Semiconductor integrated circuit device |
Applications Claiming Priority (4)
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JP2003091915A JP4601910B2 (en) | 2003-03-28 | 2003-03-28 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
JP2003-091915 | 2003-03-28 | ||
US10/809,796 US7105933B2 (en) | 2003-03-28 | 2004-03-26 | Semiconductor integrated circuit device and manufacturing method of the same |
US11/511,417 US20060292713A1 (en) | 2003-03-28 | 2006-08-29 | Semiconductor integrated circuit device |
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US10/809,796 Division US7105933B2 (en) | 2003-03-28 | 2004-03-26 | Semiconductor integrated circuit device and manufacturing method of the same |
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US20060292713A1 true US20060292713A1 (en) | 2006-12-28 |
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US10/809,796 Expired - Lifetime US7105933B2 (en) | 2003-03-28 | 2004-03-26 | Semiconductor integrated circuit device and manufacturing method of the same |
US11/511,417 Abandoned US20060292713A1 (en) | 2003-03-28 | 2006-08-29 | Semiconductor integrated circuit device |
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US10/809,796 Expired - Lifetime US7105933B2 (en) | 2003-03-28 | 2004-03-26 | Semiconductor integrated circuit device and manufacturing method of the same |
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US (2) | US7105933B2 (en) |
JP (1) | JP4601910B2 (en) |
CN (1) | CN1536673A (en) |
TW (1) | TW200504934A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040150007A1 (en) * | 2002-12-25 | 2004-08-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device |
Families Citing this family (13)
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JP4504791B2 (en) * | 2004-11-24 | 2010-07-14 | パナソニック株式会社 | Semiconductor circuit device and manufacturing method thereof |
JP2006210438A (en) * | 2005-01-25 | 2006-08-10 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
JP4745007B2 (en) * | 2005-09-29 | 2011-08-10 | 三洋電機株式会社 | Semiconductor device and manufacturing method thereof |
JP4822799B2 (en) * | 2005-10-19 | 2011-11-24 | Okiセミコンダクタ株式会社 | Integrated circuit layout method and layout apparatus |
US7402442B2 (en) * | 2005-12-21 | 2008-07-22 | International Business Machines Corporation | Physically highly secure multi-chip assembly |
JP5433995B2 (en) * | 2008-07-04 | 2014-03-05 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
CN102023236A (en) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Test structure and test method |
US8299632B2 (en) | 2009-10-23 | 2012-10-30 | Ati Technologies Ulc | Routing layer for mitigating stress in a semiconductor die |
US8227926B2 (en) | 2009-10-23 | 2012-07-24 | Ati Technologies Ulc | Routing layer for mitigating stress in a semiconductor die |
JP5355499B2 (en) * | 2010-06-03 | 2013-11-27 | 株式会社東芝 | Semiconductor device |
JP5584146B2 (en) * | 2011-01-20 | 2014-09-03 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP5658623B2 (en) * | 2011-06-22 | 2015-01-28 | ルネサスエレクトロニクス株式会社 | Semiconductor chip, manufacturing method thereof, and semiconductor package |
JP5970277B2 (en) * | 2012-07-20 | 2016-08-17 | ローム株式会社 | Semiconductor device |
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Also Published As
Publication number | Publication date |
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JP4601910B2 (en) | 2010-12-22 |
CN1536673A (en) | 2004-10-13 |
US20040245656A1 (en) | 2004-12-09 |
JP2004303787A (en) | 2004-10-28 |
US7105933B2 (en) | 2006-09-12 |
TW200504934A (en) | 2005-02-01 |
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