US20060244109A1 - Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions - Google Patents
Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions Download PDFInfo
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- US20060244109A1 US20060244109A1 US11/383,341 US38334106A US2006244109A1 US 20060244109 A1 US20060244109 A1 US 20060244109A1 US 38334106 A US38334106 A US 38334106A US 2006244109 A1 US2006244109 A1 US 2006244109A1
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Definitions
- the present invention relates to a method for fabricating connection regions of an integrated circuit and to an integrated circuit having connection regions.
- solder balls for making vertical contact between the integrated circuit and a printed circuit board or a further integrated circuit in a stack.
- the solder ball is arranged on a connection device or a pad, e.g. on a chip, which is connected to the active section of the chip by metal lines or interconnects which form a rewiring device.
- the connection device or pad and the layers are often fabricated from a stack of plated metals, such as copper, nickel and a gold covering layer.
- solder ball arrangements or packages require a type of solder stop around the ball. This is required since the solder has a tendency to wet not just the soldering pad itself but also the adjoining rewiring device. Without solder stop structures, the solder would flow away during the solder reliquification or reflow. It is customary for a solder stop resist or resin to be applied to the rewiring, preventing the solder from flowing away.
- the resist is normally applied, in particular spun on, and then patterned by means of a photographic technique.
- the solder stop material can be applied in a printing process if the feature sizes are large enough. In the case of three-dimensional structures, application is much more difficult. The adhesion or bonding of these organic layers to gold is not very good, which may result in the solder running under the resist and wetting covered sections of the metal lines or interconnects. Furthermore, resists which can be exposed by photographic techniques and have the required temperature stability are expensive.
- connection regions of an integrated circuit and an integrated circuit having connection regions which prevent solder from wetting the entire rewiring device without having to use a soldering stop resist.
- the idea on which the present invention is based consists in removing the readily wettable covering layer or protection device, which preferably includes gold, around a connection region, i.e. around a connection pad, on which a solder ball is provided.
- the problem mentioned in the introduction is solved in particular through the fact that the oxidizable or corrodible metallization located beneath the protection device is uncovered and passivated, i.e. oxidized, in a region around the connection region and can therefore act as a soldering stop.
- connection device preferably a solder ball, is applied to predetermined connection regions.
- a carrier layer is applied to a dielectric, preferably by sputtering.
- the oxidizable metallization has an interconnect level and/or a barrier device, which are preferably deposited electrochemically.
- the metallization is provided with a patterned photomask before the protection device is applied.
- the protection device is deposited electrochemically or by metal deposition without external current.
- the protection device is patterned in an etching step, preferably a wet-etching step, by means of a photomask which has been patterned in a photochemical process.
- the carrier layer and/or the interconnect level includes Cu.
- the metallization includes a metal or metal oxide, preferably based on Ni, which cannot be wetted with solder.
- the protection device consists of a corrosion-resistant metal, in particular Au.
- the metallization is oxidized and not wetted with solder in the region around the connection region, which has been uncovered by the protection device.
- FIG. 1 shows a cross section through an integrated circuit after a first method step for the purpose of explaining an embodiment of the present invention
- FIG. 2 shows a cross section through an integrated circuit after a further method step for the purpose of explaining an embodiment of the present invention
- FIGS. 3 to 7 show a cross section through an integrated circuit after in each case further method steps for the purpose of explaining a first embodiment of the present invention
- FIG. 8 shows a cross section through an integrated circuit corresponding to that shown in FIG. 3 , but without a protection device having been applied, for the purpose of explaining a second embodiment of the present invention
- FIGS. 9 to 11 show a cross section through an integrated circuit after in each case successive method steps for the purpose of explaining the second embodiment of the present invention.
- FIG. 1 shows a cross section through an integrated circuit or semiconductor device after a method step for the purpose of explaining an embodiment of the present invention.
- FIG. 1 illustrates an integrated circuit 10 or a semiconductor substrate which has been provided with a contact device 11 .
- the contact device 11 is used to make electrical contact with an active semiconductor region, e.g. with a rewiring device.
- a dielectric 12 or a passivation, which has a cutout above the contact device 11 is applied to the integrated circuit 10 .
- the integrated circuit may be in the form of a wafer or may already be in the form of a semiconductor chip.
- FIG. 2 shows a cross section through an integrated circuit after a further method step for the purpose of explaining an embodiment of the present invention.
- a carrier layer 13 or seed layer has been applied to the entire surface of the integrated circuit 10 and covers both the dielectric 12 and the contact device 11 .
- the carrier layer 13 is preferably applied by sputtering and includes, for_example, Ti, Al or Cu.
- an offset or a well-like structure is formed above the contact device 11 on account of the metallization 13 having been substantially homogenously sputtered onto the dielectric layer 12 provided with the recess above the contact. device 11 .
- FIG. 3 shows a cross section through an integrated circuit after a number of subsequent process steps for explaining a first embodiment of the present invention.
- FIG. 3 illustrates the integrated circuit shown in FIG. 2 , except that an interconnect level 14 , which preferably includes Al or Cu and is in particular plated on, i.e. applied electrochemically, adjoining a further metallization 15 , which has preferably been applied electrochemically and forms a barrier layer 15 , is provided above the carrier layer 13 .
- the barrier layer 15 preferably includes an oxidizable metal, such as for example Ni.
- a protection device 16 is applied above the barrier layer 15 , i.e. is preferably electroplated or deposited without the use of external current.
- This protection device 16 comprises a corrosion-resistant metal which is preferably readily wetted by solder and by way of example includes Au.
- the interconnect level 14 is the primary electrical conductor in the layer sequence 13 , 14 , 15 and 16 .
- the barrier layer 15 prevents the migration of atoms out of the interconnect level 14 , which preferably consists of copper, into a connection device 16 , 18 , which subsequently, in order to make contact with the rewiring device 13 , 14 , 15 and 16 , can be connected in the vertical direction preferably to a printed circuit board or a further integrated circuit (in each case not shown).
- the barrier layer 15 consisting in particular of Ni, is preferably an oxidizable metal which is not wetted by solder as soon as it has been oxidized.
- the protection device 16 preferably made from gold, is very thin, is easy for solder to wet and protects the barrier layer 15 , preferably made from Ni, lying below it from oxidation or corrosion.
- FIG. 4 shows a cross section through an integrated circuit after a further method step for the purpose of explaining a first embodiment of the present invention.
- a photochemically patterned photpresist mask 17 which in a subsequent etching step, in particular a wet-etching step, protects the protection device 16 from being etched away in the region covered by the photoresist structure, has been formed above the protection device 16 .
- FIG. 5 illustrates the arrangement shown in FIG. 4 after the removal of the protection device 16 in sections which are uncovered by the photoresist structure 17 , preferably by means of a wet-etching step.
- FIG. 6 shows a cross-section through the integrated circuit shown in FIG. 5 after the removal of the photoresist mask 17 .
- a connection region 18 ′ At a predetermined location there is a connection region 18 ′.
- the barrier layer 15 At least in a region around the connection region 18 ′, the barrier layer 15 is uncovered and is thereby exposed to oxidation or corrosion.
- FIG. 7 shows a cross section through an integrated circuit for the purpose of explaining the first embodiment of the present invention.
- FIG. 7 illustrates the integrated circuit shown in FIG. 6 , except that a solder ball, which is used to make vertical contact, for example with a printed circuit board or further integrated circuits, has been applied to the contact region 18 ′, i.e. the patterned protection device 16 .
- This ensures that electrical contact is made between the contact device 11 and the connection device 18 , which preferably comprises a solder ball, via the rewiring device 13 , 14 , 15 and 16 .
- the entire protection device 16 above the barrier device 15 it is not necessary for the entire protection device 16 above the barrier device 15 to be removed, but at least a region around the connection region 18 ′, which is wetted with solder, has to be taken out of the protection device 16 , i.e. in this region around the connection device 18 it must be possible for the barrier layer 15 to be uncovered and oxidized. Since the passivated metal, preferably nickel, of the barrier layer 15 is not wetted by solder, it serves as a solder stop device.
- FIG. 8 shows a cross section through an integrated circuit as shown in FIG. 3 , but without an applied protection device, for the purpose of explaining a second embodiment of the present invention.
- a patterned photoresist structure 17 has been applied to the barrier layer 15 , which preferably consists of an oxidizable metal, such as Ni.
- this photoresist structure 17 represents a negative structure compared to the photo resist structure shown in FIG. 4 .
- the surfaces of the barrier device 15 which are covered by the photoresist structure 17 are to be protected from deposition during a subsequent application of a metallization 16 , which is preferably carried out by means of electrochemical plating.
- the patterned photoresist structure 17 is achieved using known photolithographic means.
- FIG. 9 shows the integrated circuit presented in FIG. 8 in cross section after the application of a-protection device 16 , which preferably consists of Au.
- the protection device 16 which in particular forms a protection against corrosion and includes a material which can easily be wetted by solder, is preferably deposited in an electrochemical plating process.
- FIG. 10 shows the integrated circuit as shown in FIG. 9 in cross section after the removal of the photomask structure. Furthermore, the statements which have been made in connection with FIG. 6 also apply to FIG. 10 .
- FIG. 11 shows a cross section through the integrated circuit with an applied contact device 18 on the readily wettable protection device 16 , around which, at least in a region, the barrier layer 15 is uncovered and oxidized. Therefore, it is not wetted by solder, even if the solder ball 18 for making contact with a printed circuit board, a further semiconductor device or integrated circuit in the vertical direction, is liquefied again in order to make electrical contact with the corresponding other device.
- the statements which have been made in connection with FIG. 7 also apply.
- the readily wettable protection device 16 is applied to the barrier layer 15 only at the locations where there is no photoresist 17 , it is possible to dispense with an expensive photographic step.
- there are no adhesion problems with the present solder stop passivation which means that solder cannot run under a stop resist, as is the case when using soldering stop resist, which ultimately results in cost savings.
- Ni, Cu, Al and Ti are to be understood as oxidizable metallizations, unlike Au.
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Abstract
A method for fabricating an integrated circuit connection region includes application of a dielectric to an integrated circuit with a connection region, application of a corrodible metalization layer to the dielectric, application of a protection device to the metalization layer, and removal of the protection device in a region around the connection region.
Description
- This application is a divisional application of and claims priority under 35 U.S.C. §120 to application Ser. No. 10/642,092, filed Aug. 15, 2003, which claims priority from German Application Serial No. 102 38 816.4, filed Aug. 23, 2002, the contents of which are incorporated herein by reference.
- The present invention relates to a method for fabricating connection regions of an integrated circuit and to an integrated circuit having connection regions.
- Semiconductor devices or integrated circuits which are provided in a flip-chip structure have solder balls for making vertical contact between the integrated circuit and a printed circuit board or a further integrated circuit in a stack. The solder ball is arranged on a connection device or a pad, e.g. on a chip, which is connected to the active section of the chip by metal lines or interconnects which form a rewiring device. The connection device or pad and the layers are often fabricated from a stack of plated metals, such as copper, nickel and a gold covering layer.
- All solder ball arrangements or packages require a type of solder stop around the ball. This is required since the solder has a tendency to wet not just the soldering pad itself but also the adjoining rewiring device. Without solder stop structures, the solder would flow away during the solder reliquification or reflow. It is customary for a solder stop resist or resin to be applied to the rewiring, preventing the solder from flowing away.
- If the rewiring layout is two-dimensional, the resist is normally applied, in particular spun on, and then patterned by means of a photographic technique. Alternatively, the solder stop material can be applied in a printing process if the feature sizes are large enough. In the case of three-dimensional structures, application is much more difficult. The adhesion or bonding of these organic layers to gold is not very good, which may result in the solder running under the resist and wetting covered sections of the metal lines or interconnects. Furthermore, resists which can be exposed by photographic techniques and have the required temperature stability are expensive.
- Therefore, it is an object of the present invention to provide a method for fabricating connection regions of an integrated circuit and an integrated circuit having connection regions which prevent solder from wetting the entire rewiring device without having to use a soldering stop resist.
- The idea on which the present invention is based consists in removing the readily wettable covering layer or protection device, which preferably includes gold, around a connection region, i.e. around a connection pad, on which a solder ball is provided.
- In the present invention, the problem mentioned in the introduction is solved in particular through the fact that the oxidizable or corrodible metallization located beneath the protection device is uncovered and passivated, i.e. oxidized, in a region around the connection region and can therefore act as a soldering stop.
- According to a preferred refinement, a connection device, preferably a solder ball, is applied to predetermined connection regions.
- According to a further preferred refinement, a carrier layer is applied to a dielectric, preferably by sputtering.
- According to a further preferred refinement, the oxidizable metallization has an interconnect level and/or a barrier device, which are preferably deposited electrochemically.
- According to a further preferred refinement, to produce the patterned protection device the metallization is provided with a patterned photomask before the protection device is applied.
- According to a further preferred refinement, the protection device is deposited electrochemically or by metal deposition without external current.
- According to a further preferred refinement, the protection device is patterned in an etching step, preferably a wet-etching step, by means of a photomask which has been patterned in a photochemical process.
- According to a further preferred refinement, the carrier layer and/or the interconnect level includes Cu.
- According to a further preferred refinement, the metallization includes a metal or metal oxide, preferably based on Ni, which cannot be wetted with solder.
- According to a further preferred refinement, the protection device consists of a corrosion-resistant metal, in particular Au.
- According to a further preferred refinement, the metallization is oxidized and not wetted with solder in the region around the connection region, which has been uncovered by the protection device.
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FIG. 1 shows a cross section through an integrated circuit after a first method step for the purpose of explaining an embodiment of the present invention; -
FIG. 2 shows a cross section through an integrated circuit after a further method step for the purpose of explaining an embodiment of the present invention; - FIGS. 3 to 7 show a cross section through an integrated circuit after in each case further method steps for the purpose of explaining a first embodiment of the present invention;
-
FIG. 8 shows a cross section through an integrated circuit corresponding to that shown inFIG. 3 , but without a protection device having been applied, for the purpose of explaining a second embodiment of the present invention; - FIGS. 9 to 11 show a cross section through an integrated circuit after in each case successive method steps for the purpose of explaining the second embodiment of the present invention.
-
FIG. 1 shows a cross section through an integrated circuit or semiconductor device after a method step for the purpose of explaining an embodiment of the present invention. -
FIG. 1 illustrates anintegrated circuit 10 or a semiconductor substrate which has been provided with acontact device 11. Thecontact device 11 is used to make electrical contact with an active semiconductor region, e.g. with a rewiring device. A dielectric 12 or a passivation, which has a cutout above thecontact device 11, is applied to the integratedcircuit 10. The integrated circuit may be in the form of a wafer or may already be in the form of a semiconductor chip. -
FIG. 2 shows a cross section through an integrated circuit after a further method step for the purpose of explaining an embodiment of the present invention. - A
carrier layer 13 or seed layer has been applied to the entire surface of the integratedcircuit 10 and covers both the dielectric 12 and thecontact device 11. Thecarrier layer 13 is preferably applied by sputtering and includes, for_example, Ti, Al or Cu. As illustrated inFIG. 2 , an offset or a well-like structure is formed above thecontact device 11 on account of themetallization 13 having been substantially homogenously sputtered onto thedielectric layer 12 provided with the recess above the contact.device 11. -
FIG. 3 shows a cross section through an integrated circuit after a number of subsequent process steps for explaining a first embodiment of the present invention. -
FIG. 3 illustrates the integrated circuit shown inFIG. 2 , except that aninterconnect level 14, which preferably includes Al or Cu and is in particular plated on, i.e. applied electrochemically, adjoining afurther metallization 15, which has preferably been applied electrochemically and forms abarrier layer 15, is provided above thecarrier layer 13. Thebarrier layer 15 preferably includes an oxidizable metal, such as for example Ni. - To protect the
barrier layer 15 from corrosion, aprotection device 16 is applied above thebarrier layer 15, i.e. is preferably electroplated or deposited without the use of external current. Thisprotection device 16 comprises a corrosion-resistant metal which is preferably readily wetted by solder and by way of example includes Au. Theinterconnect level 14 is the primary electrical conductor in thelayer sequence barrier layer 15 prevents the migration of atoms out of theinterconnect level 14, which preferably consists of copper, into aconnection device rewiring device barrier layer 15, consisting in particular of Ni, is preferably an oxidizable metal which is not wetted by solder as soon as it has been oxidized. Theprotection device 16, preferably made from gold, is very thin, is easy for solder to wet and protects thebarrier layer 15, preferably made from Ni, lying below it from oxidation or corrosion. -
FIG. 4 shows a cross section through an integrated circuit after a further method step for the purpose of explaining a first embodiment of the present invention. InFIG. 4 , a photochemically patternedphotpresist mask 17, which in a subsequent etching step, in particular a wet-etching step, protects theprotection device 16 from being etched away in the region covered by the photoresist structure, has been formed above theprotection device 16. -
FIG. 5 illustrates the arrangement shown inFIG. 4 after the removal of theprotection device 16 in sections which are uncovered by thephotoresist structure 17, preferably by means of a wet-etching step. -
FIG. 6 shows a cross-section through the integrated circuit shown inFIG. 5 after the removal of thephotoresist mask 17. At a predetermined location there is aconnection region 18′. At least in a region around theconnection region 18′, thebarrier layer 15 is uncovered and is thereby exposed to oxidation or corrosion. -
FIG. 7 shows a cross section through an integrated circuit for the purpose of explaining the first embodiment of the present invention. -
FIG. 7 illustrates the integrated circuit shown inFIG. 6 , except that a solder ball, which is used to make vertical contact, for example with a printed circuit board or further integrated circuits, has been applied to thecontact region 18′, i.e. the patternedprotection device 16. This ensures that electrical contact is made between thecontact device 11 and theconnection device 18, which preferably comprises a solder ball, via therewiring device - As indicated by dotted lines in
FIG. 7 , it is not necessary for theentire protection device 16 above thebarrier device 15 to be removed, but at least a region around theconnection region 18′, which is wetted with solder, has to be taken out of theprotection device 16, i.e. in this region around theconnection device 18 it must be possible for thebarrier layer 15 to be uncovered and oxidized. Since the passivated metal, preferably nickel, of thebarrier layer 15 is not wetted by solder, it serves as a solder stop device. -
FIG. 8 shows a cross section through an integrated circuit as shown inFIG. 3 , but without an applied protection device, for the purpose of explaining a second embodiment of the present invention. - In
FIG. 8 , a patternedphotoresist structure 17 has been applied to thebarrier layer 15, which preferably consists of an oxidizable metal, such as Ni. However, thisphotoresist structure 17 represents a negative structure compared to the photo resist structure shown inFIG. 4 . In this case, the surfaces of thebarrier device 15 which are covered by thephotoresist structure 17 are to be protected from deposition during a subsequent application of ametallization 16, which is preferably carried out by means of electrochemical plating. In this case too, as described with reference toFIG. 4 , the patternedphotoresist structure 17 is achieved using known photolithographic means. -
FIG. 9 shows the integrated circuit presented inFIG. 8 in cross section after the application ofa-protection device 16, which preferably consists of Au. Theprotection device 16, which in particular forms a protection against corrosion and includes a material which can easily be wetted by solder, is preferably deposited in an electrochemical plating process. -
FIG. 10 shows the integrated circuit as shown inFIG. 9 in cross section after the removal of the photomask structure. Furthermore, the statements which have been made in connection withFIG. 6 also apply toFIG. 10 . - 11 shows a cross section through the integrated circuit with an applied
contact device 18 on the readilywettable protection device 16, around which, at least in a region, thebarrier layer 15 is uncovered and oxidized. Therefore, it is not wetted by solder, even if thesolder ball 18 for making contact with a printed circuit board, a further semiconductor device or integrated circuit in the vertical direction, is liquefied again in order to make electrical contact with the corresponding other device. In addition, the statements which have been made in connection withFIG. 7 also apply. - According to the second embodiment, in which the readily
wettable protection device 16 is applied to thebarrier layer 15 only at the locations where there is nophotoresist 17, it is possible to dispense with an expensive photographic step. In general, there are no adhesion problems with the present solder stop passivation, which means that solder cannot run under a stop resist, as is the case when using soldering stop resist, which ultimately results in cost savings. - Although the present invention has been described above on the basis of preferred exemplary embodiments, it is not restricted to these embodiments, but rather can be modified in numerous ways.
- In particular, the choice of metal described (copper, nickel, gold, aluminum, titanium, etc.) and layer sequences is to be considered purely as an example; Ni, Cu, Al and Ti are to be understood as oxidizable metallizations, unlike Au.
Claims (13)
1. A semiconductor device comprising:
an integrated circuit having a connection region,
a dielectric on the integrated circuit,
a corrodible metallization layer on the dielectric,
a patterned protection device, wherein the protection device is removed around the connection region.
2. The semiconductor device of claim 1 , further comprising a carrier layer applied above the dielectric.
3. The semiconductor device of claim 2 , wherein the carrier layer includes copper.
4. The semiconductor device of claim 1 , wherein the metallization layer includes an interconnect layer.
5. The semiconductor device of claim 4 , wherein the interconnect layer includes copper.
6. The semiconductor device of claim 1 , wherein the metallization layer includes a barrier device that is not wetted by solder.
7. The semiconductor device of claim 6 , wherein the barrier device includes nickel.
8. The semiconductor device of claim 6 , wherein the barrier device includes a metal oxide.
9. The semiconductor device of claim 1 , wherein the protection device includes a corrosion-resistant metal.
10. The semiconductor device of claim 9 , wherein the corrosion resistant metal includes gold.
11. The semiconductor device of claim 1 , further comprising a connection device on the connection region.
12. The semiconductor device of claim 11 , wherein the connection device includes solder.
13. The semiconductor device of claim 1 , wherein the metallization is oxidized and not wetted by solder in a region exposed by the protection device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/383,341 US20060244109A1 (en) | 2002-08-23 | 2006-05-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10238816A DE10238816B4 (en) | 2002-08-23 | 2002-08-23 | Method of making connection areas of an integrated circuit and integrated circuit with connection areas |
DE10238816.4 | 2002-08-23 | ||
US10/642,092 US7087512B2 (en) | 2002-08-23 | 2003-08-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
US11/383,341 US20060244109A1 (en) | 2002-08-23 | 2006-05-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/642,092 Division US7087512B2 (en) | 2002-08-23 | 2003-08-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
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US20060244109A1 true US20060244109A1 (en) | 2006-11-02 |
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US10/642,092 Expired - Fee Related US7087512B2 (en) | 2002-08-23 | 2003-08-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
US11/383,341 Abandoned US20060244109A1 (en) | 2002-08-23 | 2006-05-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
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US10/642,092 Expired - Fee Related US7087512B2 (en) | 2002-08-23 | 2003-08-15 | Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions |
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US (2) | US7087512B2 (en) |
DE (1) | DE10238816B4 (en) |
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EP1815515A4 (en) * | 2004-10-29 | 2009-03-11 | Flipchip Internat L L C | Semiconductor device package with bump overlying a polymer layer |
TWI251284B (en) * | 2004-11-12 | 2006-03-11 | Advanced Semiconductor Eng | Redistribution layer and circuit structure thereof |
US8575018B2 (en) * | 2006-02-07 | 2013-11-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming bump structure with multi-layer UBM around bump formation area |
US9111949B2 (en) * | 2012-04-09 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus of wafer level package for heterogeneous integration technology |
DE102013211555A1 (en) * | 2013-06-19 | 2014-12-24 | Robert Bosch Gmbh | Component with means for reducing assembly-related mechanical stresses and method for its production |
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US6589874B2 (en) * | 1998-12-03 | 2003-07-08 | International Business Machines Corporation | Method for forming electromigration-resistant structures by doping |
US6781234B2 (en) * | 2001-07-25 | 2004-08-24 | Renesas Technology Corp. | Semiconductor device having electrodes containing at least copper nickel phosphorous and tin |
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DE3107943A1 (en) * | 1981-03-02 | 1982-09-16 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR THE PRODUCTION OF SOLDERABLE AND TEMPERATURE-ENDED METAL-FREE THICK-LAYER CONDUCTORS |
DE3824008A1 (en) * | 1988-07-15 | 1990-01-25 | Contraves Ag | ELECTRONIC CIRCUIT AND METHOD FOR THE PRODUCTION THEREOF |
EP0411165B1 (en) * | 1989-07-26 | 1997-04-02 | International Business Machines Corporation | Method of forming of an integrated circuit chip packaging structure |
US5288951A (en) * | 1992-10-30 | 1994-02-22 | At&T Bell Laboratories | Copper-based metallizations for hybrid integrated circuits |
US5449955A (en) * | 1994-04-01 | 1995-09-12 | At&T Corp. | Film circuit metal system for use with bumped IC packages |
KR100516316B1 (en) * | 1996-05-15 | 2005-09-23 | 세이코 엡슨 가부시키가이샤 | Thin film device, active matrix substrate, liquid crystal panel, electric device and method for processing a thin film device |
DE19712219A1 (en) * | 1997-03-24 | 1998-10-01 | Bosch Gmbh Robert | Process for the production of solder bumps of a defined size |
US5969427A (en) * | 1998-02-05 | 1999-10-19 | Micron Technology, Inc. | Use of an oxide surface to facilitate gate break on a carrier substrate for a semiconductor device |
US6130141A (en) * | 1998-10-14 | 2000-10-10 | Lucent Technologies Inc. | Flip chip metallization |
US6524346B1 (en) * | 1999-02-26 | 2003-02-25 | Micron Technology, Inc. | Stereolithographic method for applying materials to electronic component substrates and resulting structures |
US6423570B1 (en) * | 2000-10-18 | 2002-07-23 | Intel Corporation | Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby |
US6465282B1 (en) * | 2001-09-28 | 2002-10-15 | Infineon Technologies Ag | Method of forming a self-aligned antifuse link |
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2002
- 2002-08-23 DE DE10238816A patent/DE10238816B4/en not_active Expired - Fee Related
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2003
- 2003-08-15 US US10/642,092 patent/US7087512B2/en not_active Expired - Fee Related
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2006
- 2006-05-15 US US11/383,341 patent/US20060244109A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6589874B2 (en) * | 1998-12-03 | 2003-07-08 | International Business Machines Corporation | Method for forming electromigration-resistant structures by doping |
US6781234B2 (en) * | 2001-07-25 | 2004-08-24 | Renesas Technology Corp. | Semiconductor device having electrodes containing at least copper nickel phosphorous and tin |
Also Published As
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DE10238816A1 (en) | 2004-03-11 |
US7087512B2 (en) | 2006-08-08 |
DE10238816B4 (en) | 2008-01-10 |
US20050250304A1 (en) | 2005-11-10 |
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