US20060220160A1 - Structure of a structure release and a method for manufacturing the same - Google Patents

Structure of a structure release and a method for manufacturing the same Download PDF

Info

Publication number
US20060220160A1
US20060220160A1 US11/240,796 US24079605A US2006220160A1 US 20060220160 A1 US20060220160 A1 US 20060220160A1 US 24079605 A US24079605 A US 24079605A US 2006220160 A1 US2006220160 A1 US 2006220160A1
Authority
US
United States
Prior art keywords
electrode
structure
sacrificial layer
etching process
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/240,796
Inventor
Mark Miles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SnapTrack Inc
Original Assignee
Miles Mark W
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/644,312 priority Critical patent/US7460291B2/en
Application filed by Miles Mark W filed Critical Miles Mark W
Priority to US11/240,796 priority patent/US20060220160A1/en
Publication of US20060220160A1 publication Critical patent/US20060220160A1/en
Assigned to QUALCOMM MEMS TECHNOLOGIES, INC. reassignment QUALCOMM MEMS TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IDC, LLC
Assigned to SNAPTRACK, INC. reassignment SNAPTRACK, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: QUALCOMM MEMS TECHNOLOGIES, INC.
Application status is Abandoned legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12Generating the spectrum; Monochromators
    • G01J3/26Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B26/00Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
    • G02B26/001Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating based on interference in an adjustable optical cavity
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/13725Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on guest-host interaction
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/10Light guides of the optical waveguide type
    • G02B6/12Light guides of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12104Mirror; Reflectors or the like
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/216Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using liquid crystals, e.g. liquid crystal Fabry-Perot filters
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/03Function characteristic scattering
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/3466Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on interferometric effect

Abstract

A structure of a structure release and a manufacturing method are provided. The structure and manufacturing method are adapted for an interference display cell. The structure of the interference display cell includes a first electrode, a second electrode and at least one supporter. The second electrode has at least one hole and is arranged about parallel with the first electrode. The supporter is located between the first electrode and the second electrode and a cavity is formed. In the release etch process of manufacturing the structure, an etchant can pass through the hole to etch a sacrificial layer between the first and the second electrodes to form the cavity; therefore, the time needed for the process becomes shorter.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation-in-part, and hereby incorporates by reference the entire disclosure, of U.S. patent application Ser. No. 10/644,312, filed Aug. 19, 2003.
  • Moreover, this application incorporates by reference U.S. patent application Ser. No. 11/090,911, filed Mar. 25, 2005; U.S. patent application Ser. No. 11/150,496, filed Jun. 10, 2005; U.S. Pat. No. 5,835,255, issued Nov. 10, 1998; U.S. Pat. No. 5,986,796, issued Nov. 16, 1999; U.S. Pat. No. 6,040,937, issued Mar. 21, 2000; U.S. Pat. No. 6,055,090, issued Apr. 25, 2000; U.S. Pat. No. 6,650,455, issued Nov. 18, 2003; U.S. Pat. No. 6,674,562, issued Jan. 6, 2004; U.S. Pat. No. 6,741,377, issued May 25, 2004; and U.S. Pat. No. 6,870,654, issued Mar. 22, 2005.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a structure of a structure release and a method for manufacturing the same, and more particularly, the present invention relates to a structure of a structure release and a method for manufacturing the same adapted for an interference display cell.
  • 2. Description of the Related Art
  • In a microelectromechanical system (MEMS), the development of a sacrificial layer technique has become a key factor for manufacturing a suspended structure, such as a cantilever, a beam, a membrane, a channel, a cavity, a joint or hinge, a link, a crank, a gear or a rack, to name a few. A structure release etching process is adapted for removing a sacrificial layer, so a structure of a structure release in a microelectromechanical system has an influence on the process of removing the sacrificial layer.
  • A conventional structure release etching process is first introduced with an interference display cell as an example. The interference display cell, a kind of a microelectromechanical system, is used to fabricate a planar display. Planar displays have great superiority in the portable display device and limited-space display market because they are lightweight and small. To date, in addition to liquid crystal displays (LCD), organic electro-luminescent displays (OLED), and plasma display panels (PDP), a mode of optical interference displays is another option for planar displays.
  • U.S. Pat. No. 5,835,255 discloses an array of display cells of visible light that can be used in a planar display. Referring to FIG. 1, FIG. 1 illustrates a cross-sectional view of a conventional display cell.
  • Every optical interference display cell 100 comprises two walls, wall 102 and wall 104. The wall 102 and the wall 104 are supported by supporters 106, and a cavity 108 is subsequently formed between the wall 102, the wall 104 and the supporters 106. The distance between the wall 102 and the wall 104, that is, the length of the cavity 108, is D. Either the wall 102 or the wall 104 is a semi-transmissible/semi-reflective layer with an absorption rate that partially absorbs visible light, and the other is a light reflective layer that is deformable when voltage is applied. When the incident light passes through the wall 102 or the wall 104 and into the cavity 108, in wavelengths (λ) of all visible light spectra of the incident light, only visible light with a wavelength λ1 corresponding to formula 1.1 can generate a constructive interference and can be emitted, that is,
    2D=Nλ  (1.1)
    where N is a natural number.
  • When the length D of the cavity 108 is equal to half of the wavelength multiplied by any natural number, a constructive interference is generated and a sharp light wave is emitted. In the meantime, if an observer follows the direction of the incident light, a reflected light with wavelength λ1 can be observed. Therefore, the optical interference display cell 100 is “open”.
  • FIG. 2 illustrates a cross-sectional view of a conventional display cell after a voltage is applied. Referring to FIG. 2, while driven by the voltage, the wall 104 is deformed and falls down towards the wall 102 due to the attraction of static electricity. At this time, the distance between the wall 102 and the wall 104, that is, the length of the cavity 108, is not exactly equal to zero, but is d, which can be equal to zero. If D in formula 1.1 is replaced with d, only visible light with a wavelength λ2 satisfying formula 1.1 in wavelengths λ of all visible light spectra of the incident light can generate a constructive interference, be reflected by the wall 104, and pass through the wall 102. Because the wall 102 has a high light absorption rate for light with wavelength λ2, all the incident light in the visible light spectrum is filtered out and an observer who follows the direction of the incident light cannot observe any reflected light in the visible light spectrum. Therefore, the optical interference display cell 100 is now “closed”.
  • FIG. 3A and FIG. 3B illustrate a method for manufacturing a conventional display cell. Referring to FIG. 3A, a first electrode 110 and a sacrificial layer 111 are formed in sequence on a transparent substrate 109, and opening 112, which is suitable for forming a supporter therein, is formed in the first electrode 110 and the sacrificial layer 111. Then, a supporter 106 is formed in the opening 112. Next, an electrode 114 is formed on the sacrificial layer 111 and the supporter 106. Subsequently, referring to FIG. 3B, the sacrificial layer 111 shown in FIG. 3A is removed by a release etching process to form a cavity 116, which is located in the position of the sacrificial layer 111, and the length D of the cavity 116 is the thickness of the sacrificial layer 111.
  • In a microelectromechanical process, a micro suspended structure is fabricated by use a sacrificial layer. A suspended movable microstructure is fabricated by a selective etching between a device structure layer and the sacrificial layer to remove the sacrificial layer and leave the structure layer, and this process is called a structure release etching. The difference between the structure release etching process and an IC process is that in the structure release etching process, the selective etching is an isotropic etching, so that an undercut or an under etching is formed in the structure layer for smooth separation of the structure layer and the substrate.
  • The most popular structure release etching process is a wet structure release process. In the wet structure release process, a rinsing step and a drying step usually have to be performed after etching, and a microstructure can substantially be suspended above the substrate. However, during the wet structure release process, it is quite easy for the structure and the substrate to stick together, thereby resulting in failure of the device. A dry etching process using xenon difluoride (XeF2) as an etchant can be used to solve the problems resulted in the wet etching process.
  • Xenon difluoride is in a solid state at normal temperature and normal pressure, and is sublimated into the gaseous state at low pressure. Xenon difluoride has great etching selectivity on silicon materials, such as monocrystalline silicon, polysilicon and amorphous silicon, and some metals, such as molybdenum (Mo), molybdenum alloy and so on. Xenon is an inert gas, and xenon difluoride is quite unstable. The etching mechanism of xenon difluoride is that two fluorine free radicals are brought to the reaction positions by xenon, and when xenon difluoride contacts the material to be etched, xenon difluoride decomposes to release these two fluorine free radicals. Because the isotropic etching effect of xenon difluoride is great, xenon difluoride has an excellent capacity for lateral etching. In a microelectromechanical system process, xenon difluoride is used as an etchant to remove a sacrificial layer in a structure release etching process.
  • Referring to FIG. 4, FIG. 4 illustrates a top view of a conventional optical interference display cell. The optical interference display cell 200 includes separation structures 202, such as defined by dotted lines 2021, located on two opposite sides of the optical interference display cell 200, and supporters 204 located on the other two opposite sides of the optical interference display cell 200. The separation structures 202 and the supporters 204 are located between two electrodes. There are gaps between the supporters 204, and the supporters 204 and the separation structures 202. The gaseous xenon difluoride permeates through the gaps and etches a sacrificial layer (not shown in FIG. 4). The rate of a structure release etching process with an etchant of the gaseous xenon difluoride changes with the different materials of the sacrificial layers desired to be etched. Typically, the etching rate can be greater than 10 micrometers per minute, and even can be up to 20-30 micrometers per minute for some materials. For the size of the present optical interference display cell, one structure release etching process only takes dozens of seconds to 3 minutes.
  • Although the structure release etching process performed with the etchant of gaseous xenon difluoride has the aforementioned advantages, a disadvantage of the high cost of the structure release etching process results from the character of xenon difluoride itself. Xenon difluoride is expensive, and is particularly sensitive to moisture and is unstable. When xenon difluoride contacts moisture, hydrogen fluoride is produced. Hydrogen fluoride is not only dangerous, but also reduces efficiency of etching. Besides, the structure release etching process performed using xenon difluoride as an etchant is rare in semiconductor processes and typical planar display processes, so etchers that are maturely developed in the semiconductor processes and the liquid crystal display processes are unsuitable for the structure release etching process with xenon difluoride etchant. The process apparatuses used in semiconductor or typical planar display can be continuously used in most of the main processes of the optical interference display, but the structure release etching process needs a totally different apparatus design. To reorganize and consolidate the process apparatuses would be an obstacle to the development and throughput of the optical interference display.
  • SUMMARY OF THE INVENTION
  • The development of the etching apparatus with an etchant of xenon difluoride is not maturing, which is disadvantageous to the development and throughput of the optical interference display, and the etchant xenon difluoride is expensive and unstable. Therefore, if etching process apparatuses used in semiconductor or typical planar display can be applied to perform a structure release etching process, the process apparatuses of the optical interference display are easily reorganized and consolidated, and the structure release etching process can be performed cheaply.
  • The reason that the etching apparatus used in typical semiconductor or planar display is not suitable for use in the structure release etching process is the poor capacity for lateral etching, and even though an etchant with a great etching property, for example, nitrogen trifluoride (NF3) or sulphur hexafluoride (SF6), is used, the etching rate is only between 3 micrometers and 10 micrometers per minute. This is slower than that for using xenon difluoride as an etchant by several to dozens of times. Therefore, this is very disadvantageous to throughput of the optical interference display.
  • Therefore, an objective of the present invention is to provide a structure of a structure release suitable for an optical interference display cell structure. Time needed for the structure etching process can be greatly reduced and throughput of the optical interference display can be increased.
  • Another objective of the present invention is to provide a structure of a structure release suitable for an optical interference display cell structure, in which a xenon difluoride process is not needed to perform a structure release etching, thereby avoiding the difficulties resulting from reorganizing and consolidating the process apparatuses.
  • Still another objective of the present invention is to provide a structure release etching process for a structure of a structure release suitable for an optical interference display cell structure. In the structure release etching process, an etching reagent including a fluorine base or a chlorine base, such as CF4, BCl3, NF3, or SF6 and so on, can be used to replace xenon difluoride to perform the structure release etching, thereby lowering producing cost.
  • Yet another objective of the present invention is to provide a structure release etching process for a structure of a structure release suitable for an optical interference display cell structure. The structure release etching process can use a conventional etching apparatus, so the difficulties resulting from reorganizing and consolidating the process apparatuses can be avoided.
  • According to the aforementioned objectives of the present invention, one preferred embodiment of the present invention takes an optical interference display as an example to illustrate how to apply the present invention to a microelectromechanical system. An optical interference display cell structure includes a first electrode and a second electrode, the two electrodes being supported by a supporter, which is located between the two electrodes. A plurality of holes are located on the second electrode, and the holes pass. through the second electrode and expose a sacrificial layer under the second electrode. With the holes in the second electrode, etching plasma can etch the exposed sacrificial layer through the holes, so as to accelerate a structure release etching process. Therefore, the etching process using an etchant including a fluorine base or a chlorine base, such as CF4, BCl3, NF3, or SF6 and so on, suitable for conventional semiconductor or typical planar display process can be used to perform a structure release etching process of the optical interference display cell, and process time of the structure release etching process is commensurate with that of xenon difluoride process. Certainly, the etching reagents including a fluorine base or a chlorine base can be adapted and mixed to form an etchant for etching the sacrificial layer.
  • In addition, the present invention preferably uses remote plasma. A plasma is first produced in a plasma generator, and after portion or all of the charged composition in the plasma is filtered out, the remaining plasma, the remote plasma, is sent into a chamber to perform a reaction. Free radicals are the main composition of the remote plasma, so a life cycle of the remote plasma is longer and the structure release etching of the sacrificial layer is performed efficiently. Besides, the free radicals are not charged and not easily affected by an electric field, so the effect of isotropic etching is better for being beneficial to lateral etching.
  • According to the optical interference display cell structure and the method for manufacturing the same of the present invention, the holes in the second electrode can indeed reduce the time taken in the structure release etching, to make it possible for a conventional etching process to replace a xenon difluoride etching process, and to avoid the difficulties resulting from reorganizing and consolidating the process apparatuses. The use of the remote plasma increases the lift cycle of the etching plasma and the lateral etching capacity of the plasma, accelerates the rate of the structure release etching, decrease the time needed in the structure release etching, and increases the throughput of the optical interference display.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • These and other features, aspects, and advantages of the present invention will be more fully understood by reading the following detailed description of the preferred embodiment, with reference made to the accompanying drawings as follows:
  • FIG. 1 illustrates a cross-sectional view of a conventional display cell;
  • FIG. 2 illustrates a cross-sectional view of a conventional display cell after a voltage is applied;
  • FIG. 3A and FIG. 3B illustrate a method for manufacturing a conventional display cell;
  • FIG. 4 illustrates a top view of a conventional optical interference display cell;
  • FIG. 4A illustrates a cross-sectional view of the structure shown in FIG. 4 along cross-sectional line I-I′;
  • FIG. 5 illustrates a top view of an optical interference display cell in accordance with a preferred embodiment of the present invention;
  • FIG. 5A illustrates an enlargement of a cross-sectional view of a circle 308 shown in FIG. 5 along cross-sectional line II-II′; and
  • FIG. 6A, FIG. 6B, and FIG. 6C illustrate a method for manufacturing an optical interference display cell structure in accordance with a preferred embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • In order to make the illustration of a structure of a structure release and a method for manufacturing the same provided in the present invention more clear, an embodiment of the present invention herein takes an optical interference display cell structure and a manufacturing method thereof for example, to illustrate how to apply the structure of the structure release and the method for manufacturing the same disclosed in the present invention, and to further explain advantages of the present invention according to the disclosure of the embodiment.
  • FIG. 5 illustrates a top view of an optical interference display cell in accordance with a preferred embodiment of the present invention. Referring to FIG. 5, an optical interference display cell 300 includes an electrode 301, separation structures 302, such as defined by a dotted line 3021, and supporters 304. The separation structures 302 are located on two opposite sides of the optical interference display cell 300. The supporters 304 are located on another two opposite sides of the optical interference display cell 300, and the separation structures 302 and the supporters 304 are located between the electrode 301 and another electrode (not shown in FIG. 5). The electrode 301 includes at least one hole 306, which passes through the electrode 301. In order to enable remote plasma to diffuse efficiently into the hole 306, the diameter of the hole 306 is preferably not less than 1 micrometer. As the diameter of the hole 306 increases, the etching time decreases, but the larger hole 306 is not beneficial to the resolution of the optical interference display cell 300. Therefore, the diameter of the hole 306 is preferably not greater than 10 micrometers. In conclusion, a preferred diameter of the hole 306 is between about 1 micrometer and 5 micrometers. There are gaps between the supporters 304, and between each of the supporters 304 and the separation structures 302, and etching plasma can permeate through the gaps and the hole 306 and etch a sacrificial layer (not shown in FIG. 5).
  • In the present embodiment, the size of the optical interference display cell 300 is between about 50 micrometers and 100 micrometers. FIG. 4A illustrates a cross-sectional view of the structure shown in FIG. 4 along cross-sectional line I-I′. The gaseous xenon difluoride permeates through gaps 208 between the supporters (not shown in FIG. 4A), and between the supporters and the separation structures (not shown in FIG. 4A) to etch the sacrificial layer 210 toward the directions indicated by arrowheads 206. Typically, it takes about dozens of seconds to three minutes to finish a structure release etching process with gaseous xenon difluoride, although the etching rate of gaseous xenon difluoride varies with different materials of sacrificial layer to be etched. The conventional process, in contrast, takes about 10 minutes to 20 minutes, and sometimes even more than 20 minutes, to perform a structure release etching.
  • FIG. 5A illustrates an enlargement of a cross-sectional view of a circle 308 shown in FIG. 5 along cross-sectional line II-II′. Taking the optical interference display cell 300 illustrated in FIG. 5 as an example, when remote plasma produced from an etching reagent includes a fluorine base or a chlorine base, such as CF4, BCl3, NF3, or SF6, and is used to perform a structure release etching, the etching plasma not only permeates through gaps 312 between the supporters (not shown in FIG. 5A), and between the supporters and the separation structures (not shown in FIG. 5A) to etch the sacrificial layer 314 toward the direction indicated by an arrowhead 310, but also permeates through the hole 306 in the electrode 301 to etch the sacrificial layer 314 in the direction indicated by arrowhead 316. It takes less than 5 minutes to complete a structure release etching process, and typically, about 1 minute to 3 minutes are needed.
  • The optical interference display cell structure disclosed in the present invention enables the introduction of the conventional etching process, so the xenon difluoride etching process, which is expensive and not easy to reorganize and consolidate, is not needed, thereby avoiding the difficulties resulting from reorganizing and consolidating the process apparatuses.
  • FIG. 6A, FIG. 6B, and FIG. 6C illustrate a method for manufacturing an optical interference display cell structure in accordance with a preferred embodiment of the present invention. Referring to FIG. 6A, a first electrode 402 and a sacrificial layer 406 are firmed on a transparent substrate 401 in sequence. The material of the sacrificial layer 406 can be transparent material, such as dielectric material, or opaque material, such as metal material, polysilicon or amorphous silicon. In the embodiment, polysilicon is used as the material of the sacrificial layer 406. An opening 408 is formed in the first electrode 402 and the sacrificial layer 406 by a photolithography process, and the opening 408 is suitable for forming a supporter therein.
  • Then, a material layer 410 is formed on the sacrificial layer 406 to fill up the opening 408. The material layer 410 is suitable for forming the supporter, and the first material layer 410 generally is made of photosensitive materials such as photoresists, or non-photosensitive polymer materials such as polyester, polyamide or the like. If non-photosensitive materials are used for forming the material layer 410, a photolithographic etching process is required to define supporters in the material layer 410. In this embodiment, the photosensitive materials are used for forming the material layer 410, so merely a photolithography process is required for patterning the material layer 410.
  • Referring to FIG. 6B, supporters 412 are defined by patterning the material layer 410 through a photolithography process. Next, a second electrode 404 is formed on the sacrificial layer 406 and the supporters 412. The second electrode 404 includes at least one hole 414.
  • Subsequently, remote plasma is produced by using an etching reagent including a fluorine base or a chlorine base, such as CF4, BCl3, NF3, or SF6 and so on, as a precursor to etch the sacrificial layer 406. The remote plasma etches the sacrificial layer 406 not only through the gaps (not shown in FIG. 6B) between the supporters, but also through the hole 414, so the sacrificial layer 406 is removed by a structure release etching process, and a cavity 416 such as illustrated in FIG. 6C is formed.
  • In the present invention, the materials suitable for forming the supporters 412 include positive photoresists, negative photoresists, and all kinds of polymers, such as acrylic resins and epoxy resins.
  • According to the optical interference display cell disclosed in the embodiment, at least one hole is formed in a deformable electrode, and the number of holes relates to the size of the optical interference display cell and the size of the hole. For example, if the size of the optical interference display cell is between about 50 micrometers and 100 micrometers, and the diameter of a hole is between 1 micrometer and 5 micrometers, 4 to 16 holes are needed to shorter time taken in a structure release etching process to an acceptable level. On the contrary, if the size of the optical interference display cell is less than 50 micrometers, the number of the holes may be less than 4, and even only one hole is needed to shorter time taken in a structure release etching process to an acceptable level.
  • The hole in the deformable electrode can substantially reduce time of a structure release etching process, so that etching processes suitable for semiconductor or planar display processes can be applied in the structure release etching process of the optical interference display cell structure, thereby avoiding the difficulties resulting from reorganizing and consolidating the xenon difluoride etching process apparatuses and the other deposition process apparatuses. Furthermore, fabrication cost can be reduced because the expensive xenon difluoride etching process is not needed.
  • As is understood by a person skilled in the art, the foregoing preferred embodiments of the present invention are illustrative of the present invention rather than limiting of the present invention. The structure of the structure release and the method for manufacturing the same disclosed in the present invention can be applied in various microelectromechanical structure systems. It is intended that various modifications and similar arrangements be included within the spirit and scope of the appended claims, the scope of which should be accorded the broadest interpretation so as to encompass all such modifications and similar structure.

Claims (17)

1. A device suitable for an optical interference display cell structure, the device comprising:
a first electrode;
a second electrode including at least one hole, wherein the second electrode is arranged about parallel with the first electrode; and
a supporter located between the first electrode and the second electrode, wherein a cavity is formed between the supporter, the first electrode and the second electrode,
wherein when a structure release etching process is used to remove a sacrificial layer between the first electrode and the second electrode to form the cavity, an etchant passes through the hole to etch the sacrificial layer, so as to reduce the time needed in the structure release etching process.
2. The device according to claim 1, wherein a diameter of the hole is between about 1 micrometer and 10 micrometers.
3. The device according to claim 1, wherein a diameter of the hole is between about 1 micrometer and 5 micrometers.
4. The device according to claim 1, wherein the structure release etching process comprises a remote plasma etching process.
5. The device according to claim 4, wherein a precursor of a remote plasma formed in the remote plasma etching process comprises an etching reagent, and the etching reagent comprises at least one of a fluorine base and a chlorine base.
6. The device release according to claim 4, wherein a precursor of a remote plasma formed in the remote plasma etching process comprises at least one of CF4, BCl3, NF3, and SF6.
7. The device according to claim 1, wherein the etchant includes an etching reagent, and the etching reagent comprises at least one of a fluorine base and a chlorine base.
8. The device according to claim 1, wherein the etchant comprises at least one of CF4, BCl3, NF3, and SF6.
9. The device according to claim 1, wherein a material of the sacrificial layer comprises at least one of a dielectric material, metal material and silicon material.
10. The device according to claim 1, wherein the second electrode comprises a deformable electrode.
11. A method for manufacturing an optical interference display device disposed on a substrate, the method comprising:
forming a first electrode on the substrate;
forming a sacrificial layer on the first electrode;
forming at least two openings in the sacrificial layer and the first electrode to define a position of the optical interference display device;
forming a supporter in each of the openings;
forming a second electrode on the sacrificial layer and the supporter in each of the openings, wherein the second electrode includes at least one hole, and the hole exposes the sacrificial layer; and
removing the sacrificial layer by a remote plasma etching process.
12. The method according to claim 11, wherein the second electrode comprises a deformable electrode.
13. The method according to claim 11, wherein a diameter of the hole is between about 1 micrometer and 10 micrometers.
14. The method according to claim 11, wherein a diameter of the hole is between about 1 micrometer and 5 micrometers.
15. The method for according to claim 11, wherein a precursor of a remote plasma formed in the remote plasma etching process comprises an etching reagent, and the etching reagent comprises at least one of a fluorine base and a chlorine base.
16. The method for according to claim 11, wherein a precursor of a remote plasma formed in the remote plasma etching process comprises at least one of CF4, BCl3, NF3, and SF6.
17. The method according to claim 11, wherein a material of the sacrificial layer comprises at least one of a dielectric material, metal material and silicon material.
US11/240,796 1994-05-05 2005-09-29 Structure of a structure release and a method for manufacturing the same Abandoned US20060220160A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/644,312 US7460291B2 (en) 1994-05-05 2003-08-19 Separable modulator
US11/240,796 US20060220160A1 (en) 2003-08-19 2005-09-29 Structure of a structure release and a method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/240,796 US20060220160A1 (en) 2003-08-19 2005-09-29 Structure of a structure release and a method for manufacturing the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/644,312 Continuation-In-Part US7460291B2 (en) 1986-04-23 2003-08-19 Separable modulator

Publications (1)

Publication Number Publication Date
US20060220160A1 true US20060220160A1 (en) 2006-10-05

Family

ID=34216394

Family Applications (4)

Application Number Title Priority Date Filing Date
US10/644,312 Expired - Fee Related US7460291B2 (en) 1986-04-23 2003-08-19 Separable modulator
US11/240,796 Abandoned US20060220160A1 (en) 1994-05-05 2005-09-29 Structure of a structure release and a method for manufacturing the same
US12/325,964 Expired - Fee Related US7672035B2 (en) 1994-05-05 2008-12-01 Separable modulator
US12/715,220 Expired - Fee Related US7852544B2 (en) 1994-05-05 2010-03-01 Separable modulator

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/644,312 Expired - Fee Related US7460291B2 (en) 1986-04-23 2003-08-19 Separable modulator

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/325,964 Expired - Fee Related US7672035B2 (en) 1994-05-05 2008-12-01 Separable modulator
US12/715,220 Expired - Fee Related US7852544B2 (en) 1994-05-05 2010-03-01 Separable modulator

Country Status (12)

Country Link
US (4) US7460291B2 (en)
EP (1) EP1656579A1 (en)
JP (1) JP4468307B2 (en)
KR (1) KR20060098362A (en)
CN (1) CN1853130A (en)
AU (1) AU2004266407A1 (en)
BR (1) BRPI0413664A (en)
CA (1) CA2536145C (en)
IL (1) IL173672D0 (en)
RU (1) RU2351969C2 (en)
TW (1) TWI358550B (en)
WO (1) WO2005019899A1 (en)

Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7460292B2 (en) 2005-06-03 2008-12-02 Qualcomm Mems Technologies, Inc. Interferometric modulator with internal polarization and drive method
US20080316566A1 (en) * 2007-06-19 2008-12-25 Qualcomm Incorporated High aperture-ratio top-reflective am-imod displays
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7663794B2 (en) 2004-09-27 2010-02-16 Qualcomm Mems Technologies, Inc. Methods and devices for inhibiting tilting of a movable element in a MEMS device
US7704772B2 (en) 2004-05-04 2010-04-27 Qualcomm Mems Technologies, Inc. Method of manufacture for microelectromechanical devices
US7715079B2 (en) 2007-12-07 2010-05-11 Qualcomm Mems Technologies, Inc. MEMS devices requiring no mechanical support
US7715085B2 (en) 2007-05-09 2010-05-11 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane and a mirror
US7742220B2 (en) 2007-03-28 2010-06-22 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing conducting layers separated by stops
US7746539B2 (en) 2008-06-25 2010-06-29 Qualcomm Mems Technologies, Inc. Method for packing a display device and the device obtained thereof
US7768690B2 (en) 2008-06-25 2010-08-03 Qualcomm Mems Technologies, Inc. Backlight displays
US7773286B2 (en) 2007-09-14 2010-08-10 Qualcomm Mems Technologies, Inc. Periodic dimple array
US7782517B2 (en) 2007-06-21 2010-08-24 Qualcomm Mems Technologies, Inc. Infrared and dual mode displays
US7787173B2 (en) 2004-09-27 2010-08-31 Qualcomm Mems Technologies, Inc. System and method for multi-level brightness in interferometric modulation
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7839557B2 (en) 2004-09-27 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
US7855826B2 (en) 2008-08-12 2010-12-21 Qualcomm Mems Technologies, Inc. Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices
US7859740B2 (en) 2008-07-11 2010-12-28 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US20110008962A1 (en) * 2009-07-10 2011-01-13 Ying-Jui Huang Method for fabricating a multilayer microstructure with balancing residual stress capability
US7884989B2 (en) 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
US7889415B2 (en) 2004-09-27 2011-02-15 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US7889417B2 (en) 2007-05-09 2011-02-15 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US7920319B2 (en) 2007-07-02 2011-04-05 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7924494B2 (en) 2004-09-27 2011-04-12 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7952787B2 (en) 2006-06-30 2011-05-31 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US7969638B2 (en) 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US7982700B2 (en) 2004-09-27 2011-07-19 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US7999993B2 (en) 2004-09-27 2011-08-16 Qualcomm Mems Technologies, Inc. Reflective display device having viewable display on both sides
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
US8068269B2 (en) 2008-03-27 2011-11-29 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US8072402B2 (en) 2007-08-29 2011-12-06 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
US8081373B2 (en) 2007-07-31 2011-12-20 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US8081370B2 (en) 2004-09-27 2011-12-20 Qualcomm Mems Technologies, Inc. Support structures for electromechanical systems and methods of fabricating the same
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US8405899B2 (en) 2004-09-27 2013-03-26 Qualcomm Mems Technologies, Inc Photonic MEMS and structures
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US8797628B2 (en) 2007-10-19 2014-08-05 Qualcomm Memstechnologies, Inc. Display with integrated photovoltaic device
US8797632B2 (en) 2010-08-17 2014-08-05 Qualcomm Mems Technologies, Inc. Actuation and calibration of charge neutral electrode of a display device
US8817357B2 (en) 2010-04-09 2014-08-26 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of forming the same
US8885244B2 (en) 2004-09-27 2014-11-11 Qualcomm Mems Technologies, Inc. Display device
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8971675B2 (en) 2006-01-13 2015-03-03 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US8979349B2 (en) 2009-05-29 2015-03-17 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US8988760B2 (en) 2008-07-17 2015-03-24 Qualcomm Mems Technologies, Inc. Encapsulated electromechanical devices
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US9110289B2 (en) 1998-04-08 2015-08-18 Qualcomm Mems Technologies, Inc. Device for modulating light with multiple electrodes
US20150241735A1 (en) * 2012-06-08 2015-08-27 Samsung Display Co., Ltd. Display panel, display apparatus having the same and method of manufacturing the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same

Families Citing this family (257)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7808694B2 (en) 1994-05-05 2010-10-05 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US6674562B1 (en) * 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7460291B2 (en) * 1994-05-05 2008-12-02 Idc, Llc Separable modulator
US6680792B2 (en) * 1994-05-05 2004-01-20 Iridigm Display Corporation Interferometric modulation of radiation
US7852545B2 (en) 1994-05-05 2010-12-14 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US8014059B2 (en) * 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US7123216B1 (en) * 1994-05-05 2006-10-17 Idc, Llc Photonic MEMS and structures
US20010003487A1 (en) * 1996-11-05 2001-06-14 Mark W. Miles Visible spectrum modulator arrays
US7898722B2 (en) 1995-05-01 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical device with restoring electrode
US7471444B2 (en) * 1996-12-19 2008-12-30 Idc, Llc Interferometric modulation of radiation
US7907319B2 (en) * 1995-11-06 2011-03-15 Qualcomm Mems Technologies, Inc. Method and device for modulating light with optical compensation
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7830588B2 (en) 1996-12-19 2010-11-09 Qualcomm Mems Technologies, Inc. Method of making a light modulating display device and associated transistor circuitry and structures thereof
WO2003007049A1 (en) * 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US8023724B2 (en) * 1999-07-22 2011-09-20 Photon-X, Inc. Apparatus and method of information extraction from electromagnetic energy based upon multi-characteristic spatial geometry processing
US6589625B1 (en) * 2001-08-01 2003-07-08 Iridigm Display Corporation Hermetic seal and method to create the same
US6794119B2 (en) * 2002-02-12 2004-09-21 Iridigm Display Corporation Method for fabricating a structure for a microelectromechanical systems (MEMS) device
US6574033B1 (en) 2002-02-27 2003-06-03 Iridigm Display Corporation Microelectromechanical systems device and method for fabricating same
US7550794B2 (en) * 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7781850B2 (en) * 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
TWI289708B (en) 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
TWI302628B (en) * 2003-01-29 2008-11-01 Qualcomm Mems Technologies Inc
US7297471B1 (en) * 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
TW594360B (en) * 2003-04-21 2004-06-21 Prime View Int Corp Ltd A method for fabricating an interference display cell
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) * 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
TW200506479A (en) * 2003-08-15 2005-02-16 Prime View Int Co Ltd Color changeable pixel for an interference display
TWI251712B (en) * 2003-08-15 2006-03-21 Prime View Int Corp Ltd Interference display plate
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
TWI231865B (en) * 2003-08-26 2005-05-01 Prime View Int Co Ltd An interference display cell and fabrication method thereof
TWI232333B (en) * 2003-09-03 2005-05-11 Prime View Int Co Ltd Display unit using interferometric modulation and manufacturing method thereof
TW593126B (en) * 2003-09-30 2004-06-21 Prime View Int Co Ltd A structure of a micro electro mechanical system and manufacturing the same
US7142346B2 (en) * 2003-12-09 2006-11-28 Idc, Llc System and method for addressing a MEMS display
US7161728B2 (en) * 2003-12-09 2007-01-09 Idc, Llc Area array modulation and lead reduction in interferometric modulators
US7532194B2 (en) * 2004-02-03 2009-05-12 Idc, Llc Driver voltage adjuster
US7342705B2 (en) * 2004-02-03 2008-03-11 Idc, Llc Spatial light modulator with integrated optical compensation structure
US7119945B2 (en) * 2004-03-03 2006-10-10 Idc, Llc Altering temporal response of microelectromechanical elements
US7706050B2 (en) * 2004-03-05 2010-04-27 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US7855824B2 (en) * 2004-03-06 2010-12-21 Qualcomm Mems Technologies, Inc. Method and system for color optimization in a display
US7060895B2 (en) * 2004-05-04 2006-06-13 Idc, Llc Modifying the electro-mechanical behavior of devices
US7164520B2 (en) 2004-05-12 2007-01-16 Idc, Llc Packaging for an interferometric modulator
US7256922B2 (en) * 2004-07-02 2007-08-14 Idc, Llc Interferometric modulators with thin film transistors
TWI233916B (en) * 2004-07-09 2005-06-11 Prime View Int Co Ltd A structure of a micro electro mechanical system
KR101313117B1 (en) * 2004-07-29 2013-09-30 퀄컴 엠이엠에스 테크놀로지스, 인크. System and method for micro-electromechanical operating of an interferometric modulator
US7551159B2 (en) * 2004-08-27 2009-06-23 Idc, Llc System and method of sensing actuation and release voltages of an interferometric modulator
US7889163B2 (en) * 2004-08-27 2011-02-15 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US7515147B2 (en) * 2004-08-27 2009-04-07 Idc, Llc Staggered column drive circuit systems and methods
US7499208B2 (en) * 2004-08-27 2009-03-03 Udc, Llc Current mode display driver circuit realization feature
US7560299B2 (en) * 2004-08-27 2009-07-14 Idc, Llc Systems and methods of actuating MEMS display elements
US7911428B2 (en) * 2004-09-27 2011-03-22 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7750886B2 (en) 2004-09-27 2010-07-06 Qualcomm Mems Technologies, Inc. Methods and devices for lighting displays
US7417783B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7630123B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
US20060132383A1 (en) * 2004-09-27 2006-06-22 Idc, Llc System and method for illuminating interferometric modulator display
US7602375B2 (en) * 2004-09-27 2009-10-13 Idc, Llc Method and system for writing data to MEMS display elements
US7679627B2 (en) 2004-09-27 2010-03-16 Qualcomm Mems Technologies, Inc. Controller and driver features for bi-stable display
US8004504B2 (en) 2004-09-27 2011-08-23 Qualcomm Mems Technologies, Inc. Reduced capacitance display element
US7893919B2 (en) * 2004-09-27 2011-02-22 Qualcomm Mems Technologies, Inc. Display region architectures
US7653371B2 (en) 2004-09-27 2010-01-26 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
US7525730B2 (en) * 2004-09-27 2009-04-28 Idc, Llc Method and device for generating white in an interferometric modulator display
US7553684B2 (en) * 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US7415186B2 (en) * 2004-09-27 2008-08-19 Idc, Llc Methods for visually inspecting interferometric modulators for defects
US8102407B2 (en) * 2004-09-27 2012-01-24 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7813026B2 (en) 2004-09-27 2010-10-12 Qualcomm Mems Technologies, Inc. System and method of reducing color shift in a display
US7898521B2 (en) * 2004-09-27 2011-03-01 Qualcomm Mems Technologies, Inc. Device and method for wavelength filtering
US7355780B2 (en) 2004-09-27 2008-04-08 Idc, Llc System and method of illuminating interferometric modulators using backlighting
CN100487547C (en) 2004-09-27 2009-05-13 Idc公司 Method and device for a display having transparent components integrated therein
US7701631B2 (en) * 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
US20060176487A1 (en) * 2004-09-27 2006-08-10 William Cummings Process control monitors for interferometric modulators
US7136213B2 (en) * 2004-09-27 2006-11-14 Idc, Llc Interferometric modulators having charge persistence
US7446926B2 (en) 2004-09-27 2008-11-04 Idc, Llc System and method of providing a regenerating protective coating in a MEMS device
US7551246B2 (en) * 2004-09-27 2009-06-23 Idc, Llc. System and method for display device with integrated desiccant
US7808703B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. System and method for implementation of interferometric modulator displays
US20060077126A1 (en) 2004-09-27 2006-04-13 Manish Kothari Apparatus and method for arranging devices into an interconnected array
US7554714B2 (en) 2004-09-27 2009-06-30 Idc, Llc Device and method for manipulation of thermal response in a modulator
US7535466B2 (en) * 2004-09-27 2009-05-19 Idc, Llc System with server based control of client device display features
US20060077148A1 (en) 2004-09-27 2006-04-13 Gally Brian J Method and device for manipulating color in a display
US7545550B2 (en) * 2004-09-27 2009-06-09 Idc, Llc Systems and methods of actuating MEMS display elements
US7684104B2 (en) * 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US7359066B2 (en) 2004-09-27 2008-04-15 Idc, Llc Electro-optical measurement of hysteresis in interferometric modulators
US7920135B2 (en) * 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
US7343080B2 (en) * 2004-09-27 2008-03-11 Idc, Llc System and method of testing humidity in a sealed MEMS device
US7724993B2 (en) 2004-09-27 2010-05-25 Qualcomm Mems Technologies, Inc. MEMS switches with deforming membranes
US7420728B2 (en) * 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US8124434B2 (en) * 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
EP1640958A2 (en) 2004-09-27 2006-03-29 Idc, Llc System with server based control of client device display features
US7586484B2 (en) * 2004-09-27 2009-09-08 Idc, Llc Controller and driver features for bi-stable display
US7626581B2 (en) * 2004-09-27 2009-12-01 Idc, Llc Device and method for display memory using manipulation of mechanical response
US7668415B2 (en) * 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US20060065366A1 (en) 2004-09-27 2006-03-30 Cummings William J Portable etch chamber
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US7807488B2 (en) * 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. Display element having filter material diffused in a substrate of the display element
US7299681B2 (en) * 2004-09-27 2007-11-27 Idc, Llc Method and system for detecting leak in electronic devices
US7710632B2 (en) * 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Display device having an array of spatial light modulators with integrated color filters
US8031133B2 (en) * 2004-09-27 2011-10-04 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US20060176241A1 (en) * 2004-09-27 2006-08-10 Sampsell Jeffrey B System and method of transmitting video data
US7259449B2 (en) * 2004-09-27 2007-08-21 Idc, Llc Method and system for sealing a substrate
EP1640318A2 (en) 2004-09-27 2006-03-29 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7417735B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Systems and methods for measuring color and contrast in specular reflective devices
US20060076632A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method for display device with activated desiccant
US7843410B2 (en) 2004-09-27 2010-11-30 Qualcomm Mems Technologies, Inc. Method and device for electrically programmable display
US20060066596A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System and method of transmitting video data
US7349141B2 (en) * 2004-09-27 2008-03-25 Idc, Llc Method and post structures for interferometric modulation
IL169799D0 (en) 2004-09-27 2007-07-04 Idc Llc Controller and driver features for bi-stable display
US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
US8878825B2 (en) * 2004-09-27 2014-11-04 Qualcomm Mems Technologies, Inc. System and method for providing a variable refresh rate of an interferometric modulator display
US8362987B2 (en) * 2004-09-27 2013-01-29 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US7355779B2 (en) * 2005-09-02 2008-04-08 Idc, Llc Method and system for driving MEMS display elements
US8310441B2 (en) 2004-09-27 2012-11-13 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US7424198B2 (en) 2004-09-27 2008-09-09 Idc, Llc Method and device for packaging a substrate
US7369296B2 (en) * 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US20060103643A1 (en) * 2004-09-27 2006-05-18 Mithran Mathew Measuring and modeling power consumption in displays
US7928928B2 (en) 2004-09-27 2011-04-19 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing perceived color shift
US7289256B2 (en) * 2004-09-27 2007-10-30 Idc, Llc Electrical characterization of interferometric modulators
US7369294B2 (en) * 2004-09-27 2008-05-06 Idc, Llc Ornamental display device
US7612932B2 (en) * 2004-09-27 2009-11-03 Idc, Llc Microelectromechanical device with optical function separated from mechanical and electrical function
US7368803B2 (en) * 2004-09-27 2008-05-06 Idc, Llc System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US20060066557A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for reflective display with time sequential color illumination
US7532195B2 (en) * 2004-09-27 2009-05-12 Idc, Llc Method and system for reducing power consumption in a display
US20060066586A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Touchscreens for displays
US7460246B2 (en) * 2004-09-27 2008-12-02 Idc, Llc Method and system for sensing light using interferometric elements
US20060076634A1 (en) 2004-09-27 2006-04-13 Lauren Palmateer Method and system for packaging MEMS devices with incorporated getter
US7710629B2 (en) * 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. System and method for display device with reinforcing substance
US7321456B2 (en) 2004-09-27 2008-01-22 Idc, Llc Method and device for corner interferometric modulation
US7561323B2 (en) * 2004-09-27 2009-07-14 Idc, Llc Optical films for directing light towards active areas of displays
US7446927B2 (en) * 2004-09-27 2008-11-04 Idc, Llc MEMS switch with set and latch electrodes
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US7345805B2 (en) 2004-09-27 2008-03-18 Idc, Llc Interferometric modulator array with integrated MEMS electrical switches
US7492502B2 (en) * 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7916103B2 (en) 2004-09-27 2011-03-29 Qualcomm Mems Technologies, Inc. System and method for display device with end-of-life phenomena
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7675669B2 (en) * 2004-09-27 2010-03-09 Qualcomm Mems Technologies, Inc. Method and system for driving interferometric modulators
US7692839B2 (en) * 2004-09-27 2010-04-06 Qualcomm Mems Technologies, Inc. System and method of providing MEMS device with anti-stiction coating
US20060066594A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Systems and methods for driving a bi-stable display element
US7719500B2 (en) * 2004-09-27 2010-05-18 Qualcomm Mems Technologies, Inc. Reflective display pixels arranged in non-rectangular arrays
US7317568B2 (en) * 2004-09-27 2008-01-08 Idc, Llc System and method of implementation of interferometric modulators for display mirrors
CN100523979C (en) 2004-09-27 2009-08-05 Idc公司 Method and device for multi-state interferometric light modulation
CN100517040C (en) 2004-09-27 2009-07-22 Idc公司 Electronic display and method for manufacturing the same
US7405861B2 (en) 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
US7573547B2 (en) 2004-09-27 2009-08-11 Idc, Llc System and method for protecting micro-structure of display array using spacers in gap within display device
WO2006046193A1 (en) * 2004-10-27 2006-05-04 Koninklijke Philips Electronics N. V. Electronic device
TWI293401B (en) 2004-12-30 2008-02-11 Au Optronics Corp Microelectrooptomechanical device and fabricating method thereof
CN1307457C (en) * 2005-01-18 2007-03-28 友达光电股份有限公司 Visual display element in micro electromechanical unit
DE102005004878B4 (en) * 2005-02-03 2015-01-08 Robert Bosch Gmbh The micromechanical capacitive pressure sensor and method of manufacture
TW200628877A (en) * 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
US20070205969A1 (en) 2005-02-23 2007-09-06 Pixtronix, Incorporated Direct-view MEMS display devices and methods for generating images thereon
US8519945B2 (en) 2006-01-06 2013-08-27 Pixtronix, Inc. Circuits for controlling display apparatus
US9158106B2 (en) 2005-02-23 2015-10-13 Pixtronix, Inc. Display methods and apparatus
US9261694B2 (en) 2005-02-23 2016-02-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US8310442B2 (en) 2005-02-23 2012-11-13 Pixtronix, Inc. Circuits for controlling display apparatus
US9229222B2 (en) 2005-02-23 2016-01-05 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US8482496B2 (en) 2006-01-06 2013-07-09 Pixtronix, Inc. Circuits for controlling MEMS display apparatus on a transparent substrate
US7417782B2 (en) * 2005-02-23 2008-08-26 Pixtronix, Incorporated Methods and apparatus for spatial light modulation
US8159428B2 (en) 2005-02-23 2012-04-17 Pixtronix, Inc. Display methods and apparatus
US7999994B2 (en) * 2005-02-23 2011-08-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US20080158635A1 (en) * 2005-02-23 2008-07-03 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US7304786B2 (en) * 2005-02-23 2007-12-04 Pixtronix, Inc. Methods and apparatus for bi-stable actuation of displays
US8526096B2 (en) 2006-02-23 2013-09-03 Pixtronix, Inc. Mechanical light modulators with stressed beams
US7746529B2 (en) 2005-02-23 2010-06-29 Pixtronix, Inc. MEMS display apparatus
US7405852B2 (en) * 2005-02-23 2008-07-29 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US7920136B2 (en) * 2005-05-05 2011-04-05 Qualcomm Mems Technologies, Inc. System and method of driving a MEMS display device
US7948457B2 (en) * 2005-05-05 2011-05-24 Qualcomm Mems Technologies, Inc. Systems and methods of actuating MEMS display elements
KR20080027236A (en) 2005-05-05 2008-03-26 콸콤 인코포레이티드 Dynamic driver ic and display panel configuration
US20060277486A1 (en) * 2005-06-02 2006-12-07 Skinner David N File or user interface element marking system
JP2009503564A (en) * 2005-07-22 2009-01-29 クアルコム,インコーポレイテッド Support structure for the Mems device and method
KR101375337B1 (en) * 2005-07-22 2014-03-18 퀄컴 엠이엠에스 테크놀로지스, 인크. Electomechanical devices having support structures and methods of fabricating the same
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
EP1907316A1 (en) 2005-07-22 2008-04-09 Qualcomm Mems Technologies, Inc. Support structure for mems device and methods therefor
CN101272982B (en) * 2005-09-30 2012-03-21 高通Mems科技公司 MEMS device and interconnects for same
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7561334B2 (en) * 2005-12-20 2009-07-14 Qualcomm Mems Technologies, Inc. Method and apparatus for reducing back-glass deflection in an interferometric modulator display device
US8391630B2 (en) * 2005-12-22 2013-03-05 Qualcomm Mems Technologies, Inc. System and method for power reduction when decompressing video streams for interferometric modulator displays
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7636151B2 (en) * 2006-01-06 2009-12-22 Qualcomm Mems Technologies, Inc. System and method for providing residual stress test structures
US7382515B2 (en) * 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US8194056B2 (en) * 2006-02-09 2012-06-05 Qualcomm Mems Technologies Inc. Method and system for writing data to MEMS display elements
US7603001B2 (en) * 2006-02-17 2009-10-13 Qualcomm Mems Technologies, Inc. Method and apparatus for providing back-lighting in an interferometric modulator display device
US7582952B2 (en) * 2006-02-21 2009-09-01 Qualcomm Mems Technologies, Inc. Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof
US7547568B2 (en) * 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7550810B2 (en) * 2006-02-23 2009-06-23 Qualcomm Mems Technologies, Inc. MEMS device having a layer movable at asymmetric rates
WO2007120885A2 (en) * 2006-04-13 2007-10-25 Qualcomm Mems Technologies, Inc. Mems devices and processes for packaging such devices
US7903047B2 (en) * 2006-04-17 2011-03-08 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
US7527996B2 (en) * 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7417784B2 (en) * 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US8004743B2 (en) * 2006-04-21 2011-08-23 Qualcomm Mems Technologies, Inc. Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US8049713B2 (en) * 2006-04-24 2011-11-01 Qualcomm Mems Technologies, Inc. Power consumption optimized display update
US7369292B2 (en) * 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US8040587B2 (en) * 2006-05-17 2011-10-18 Qualcomm Mems Technologies, Inc. Desiccant in a MEMS device
US7876489B2 (en) * 2006-06-05 2011-01-25 Pixtronix, Inc. Display apparatus with optical cavities
US7471442B2 (en) 2006-06-15 2008-12-30 Qualcomm Mems Technologies, Inc. Method and apparatus for low range bit depth enhancements for MEMS display architectures
US7766498B2 (en) 2006-06-21 2010-08-03 Qualcomm Mems Technologies, Inc. Linear solid state illuminator
US7702192B2 (en) 2006-06-21 2010-04-20 Qualcomm Mems Technologies, Inc. Systems and methods for driving MEMS display
US7385744B2 (en) * 2006-06-28 2008-06-10 Qualcomm Mems Technologies, Inc. Support structure for free-standing MEMS device and methods for forming the same
US7777715B2 (en) 2006-06-29 2010-08-17 Qualcomm Mems Technologies, Inc. Passive circuits for de-multiplexing display inputs
US7388704B2 (en) * 2006-06-30 2008-06-17 Qualcomm Mems Technologies, Inc. Determination of interferometric modulator mirror curvature and airgap variation using digital photographs
JP4327183B2 (en) * 2006-07-31 2009-09-09 株式会社日立製作所 High-pressure fuel pump control device for an internal combustion engine
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7566664B2 (en) * 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
US20080043315A1 (en) * 2006-08-15 2008-02-21 Cummings William J High profile contacts for microelectromechanical systems
KR101535805B1 (en) 2006-10-06 2015-07-09 퀄컴 엠이엠에스 테크놀로지스, 인크. Display appratus and method of forming a display
EP1943551A2 (en) 2006-10-06 2008-07-16 Qualcomm Mems Technologies, Inc. Light guide
US7629197B2 (en) 2006-10-18 2009-12-08 Qualcomm Mems Technologies, Inc. Spatial light modulator
US7545552B2 (en) * 2006-10-19 2009-06-09 Qualcomm Mems Technologies, Inc. Sacrificial spacer process and resultant structure for MEMS support structure
EP2080045A1 (en) 2006-10-20 2009-07-22 Pixtronix Inc. Light guides and backlight systems incorporating light redirectors at varying densities
US20080111834A1 (en) * 2006-11-09 2008-05-15 Mignard Marc M Two primary color display
US7816164B2 (en) 2006-12-01 2010-10-19 Qualcomm Mems Technologies, Inc. MEMS processing
US20080180783A1 (en) * 2007-01-25 2008-07-31 Li-Ming Wang Critical dimension control for photolithography for microelectromechanical systems devices
US8224189B1 (en) 2007-02-02 2012-07-17 Sunlight Photonics Inc. Retro-directive target for free-space optical communication and method of producing the same
US7916378B2 (en) 2007-03-08 2011-03-29 Qualcomm Mems Technologies, Inc. Method and apparatus for providing a light absorbing mask in an interferometric modulator display
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
KR20100016195A (en) * 2007-04-04 2010-02-12 퀄컴 엠이엠스 테크놀로지스, 인크. Eliminate release etch attack by interface modification in sacrificial layers
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US9176318B2 (en) 2007-05-18 2015-11-03 Pixtronix, Inc. Methods for manufacturing fluid-filled MEMS displays
US7625825B2 (en) * 2007-06-14 2009-12-01 Qualcomm Mems Technologies, Inc. Method of patterning mechanical layer for MEMS structures
WO2009006340A2 (en) * 2007-06-29 2009-01-08 Qualcomm Mems Technologies, Inc. Electromechanical device treatment with water vapor
US8068268B2 (en) * 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
EP2064148A1 (en) * 2007-09-28 2009-06-03 Qualcomm Mems Technologies, Inc Optimization of desiccant usage in a mems package
US7852546B2 (en) 2007-10-19 2010-12-14 Pixtronix, Inc. Spacers for maintaining display apparatus alignment
US8054527B2 (en) 2007-10-23 2011-11-08 Qualcomm Mems Technologies, Inc. Adjustably transmissive MEMS-based devices
US7729036B2 (en) * 2007-11-12 2010-06-01 Qualcomm Mems Technologies, Inc. Capacitive MEMS device with programmable offset voltage control
US8068710B2 (en) 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
US7949213B2 (en) 2007-12-07 2011-05-24 Qualcomm Mems Technologies, Inc. Light illumination of displays with front light guide and coupling elements
US20090168459A1 (en) * 2007-12-27 2009-07-02 Qualcomm Incorporated Light guide including conjugate film
CN101946278A (en) * 2008-02-11 2011-01-12 高通Mems科技公司 Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same
US8049951B2 (en) 2008-04-15 2011-11-01 Qualcomm Mems Technologies, Inc. Light with bi-directional propagation
US8248560B2 (en) * 2008-04-18 2012-08-21 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8853797B2 (en) * 2008-05-12 2014-10-07 Nxp, B.V MEMS devices and fabrication thereof
DE102008024795A1 (en) * 2008-05-23 2009-11-26 Deutsche Telekom Ag A method of controlling Terahertz electromagnetic carrier waves
US7851239B2 (en) * 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7791783B2 (en) * 2008-06-25 2010-09-07 Qualcomm Mems Technologies, Inc. Backlight displays
US20090323170A1 (en) * 2008-06-30 2009-12-31 Qualcomm Mems Technologies, Inc. Groove on cover plate or substrate
US8520285B2 (en) 2008-08-04 2013-08-27 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US7719754B2 (en) * 2008-09-30 2010-05-18 Qualcomm Mems Technologies, Inc. Multi-thickness layers for MEMS and mask-saving sequence for same
US8169679B2 (en) * 2008-10-27 2012-05-01 Pixtronix, Inc. MEMS anchors
US20110205259A1 (en) * 2008-10-28 2011-08-25 Pixtronix, Inc. System and method for selecting display modes
US20100195310A1 (en) * 2009-02-04 2010-08-05 Qualcomm Mems Technologies, Inc. Shaped frontlight reflector for use with display
US8410690B2 (en) * 2009-02-13 2013-04-02 Qualcomm Mems Technologies, Inc. Display device with desiccant
US8611331B2 (en) * 2009-02-27 2013-12-17 Qualcomm Incorporated Time division duplexing (TDD) configuration for access point base stations
US8172417B2 (en) * 2009-03-06 2012-05-08 Qualcomm Mems Technologies, Inc. Shaped frontlight reflector for use with display
US20100245370A1 (en) * 2009-03-25 2010-09-30 Qualcomm Mems Technologies, Inc. Em shielding for display devices
US8736590B2 (en) * 2009-03-27 2014-05-27 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US20110032214A1 (en) * 2009-06-01 2011-02-10 Qualcomm Mems Technologies, Inc. Front light based optical touch screen
US8379392B2 (en) * 2009-10-23 2013-02-19 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
US9082353B2 (en) 2010-01-05 2015-07-14 Pixtronix, Inc. Circuits for controlling display apparatus
US20110169724A1 (en) * 2010-01-08 2011-07-14 Qualcomm Mems Technologies, Inc. Interferometric pixel with patterned mechanical layer
KR101798312B1 (en) 2010-02-02 2017-11-15 스냅트랙, 인코포레이티드 Circuits for controlling display apparatus
US20110205756A1 (en) * 2010-02-19 2011-08-25 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8547626B2 (en) * 2010-03-25 2013-10-01 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of shaping the same
MX2012012034A (en) 2010-04-16 2013-05-30 Flex Lighting Ii Llc Front illumination device comprising a film-based lightguide.
KR20130096155A (en) 2010-04-16 2013-08-29 플렉스 라이팅 투 엘엘씨 Illumination device comprising a film-based lightguide
CN102236224B (en) * 2010-04-30 2014-01-15 北京京东方光电科技有限公司 Display panel, manufacture method and display
US8848294B2 (en) 2010-05-20 2014-09-30 Qualcomm Mems Technologies, Inc. Method and structure capable of changing color saturation
US8988440B2 (en) * 2011-03-15 2015-03-24 Qualcomm Mems Technologies, Inc. Inactive dummy pixels
US9134552B2 (en) 2013-03-13 2015-09-15 Pixtronix, Inc. Display apparatus with narrow gap electrostatic actuators

Family Cites Families (178)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2534846A (en) 1946-06-20 1950-12-19 Emi Ltd Color filter
US3247392A (en) 1961-05-17 1966-04-19 Optical Coating Laboratory Inc Optical coating and assembly used as a band pass interference filter reflecting in the ultraviolet and infrared
US3184600A (en) 1963-05-07 1965-05-18 Potter Instrument Co Inc Photosensitive apparatus for measuring coordinate distances
DE1288651B (en) 1963-06-28 1969-02-06 Siemens Ag Arrangement of electrical dipoles for Wellenlaengen below 1 mm and methods for producing such an arrangement
US3371345A (en) 1966-05-26 1968-02-27 Radiation Inc Radar augmentor
US3410363A (en) 1966-08-22 1968-11-12 Devenco Inc Method and apparatus for testing the wave-reflecting characteristics of a chamber
FR1603131A (en) 1968-07-05 1971-03-22
US3661461A (en) 1969-11-26 1972-05-09 Du Pont Co-irradiation system for producing positive images
US3813265A (en) 1970-02-16 1974-05-28 A Marks Electro-optical dipolar material
US3653741A (en) 1970-02-16 1972-04-04 Alvin M Marks Electro-optical dipolar material
US3728030A (en) 1970-06-22 1973-04-17 Cary Instruments Polarization interferometer
US3701586A (en) 1971-04-21 1972-10-31 George G Goetz Light modulating deflectable membrane
US3746785A (en) 1971-11-26 1973-07-17 Bendix Corp Deflectable membrane optical modulator
JPS4946974A (en) 1972-09-11 1974-05-07
DE2336930A1 (en) 1973-07-20 1975-02-06 Battelle Institut E V Infrared modulator (ii.)
US4125868A (en) 1975-10-28 1978-11-14 Automix Keyboards, Inc. Typesetting terminal apparatus having searching and merging features
US4087810A (en) 1976-06-30 1978-05-02 International Business Machines Corporation Membrane deformographic display, and method of making
US4099854A (en) 1976-10-12 1978-07-11 The Unites States Of America As Represented By The Secretary Of The Navy Optical notch filter utilizing electric dipole resonance absorption
US4389096A (en) 1977-12-27 1983-06-21 Matsushita Electric Industrial Co., Ltd. Image display apparatus of liquid crystal valve projection type
US4663083A (en) 1978-05-26 1987-05-05 Marks Alvin M Electro-optical dipole suspension with reflective-absorptive-transmissive characteristics
US4215244A (en) 1978-12-18 1980-07-29 The United States Of America As Represented By The Secretary Of The Army Self-adaptive mobile subscriber access system employing time division multiple accessing
US4347983A (en) 1979-01-19 1982-09-07 Sontek Industries, Inc. Hyperbolic frequency modulation related to aero/hydrodynamic flow systems
US4228437A (en) 1979-06-26 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Wideband polarization-transforming electromagnetic mirror
NL8001281A (en) 1980-03-04 1981-10-01 Philips Nv A display device.
DE3012253A1 (en) 1980-03-28 1981-10-15 Hoechst Ag A method of visible mesh of charge images and a suitable here vorichtung
DE3109653A1 (en) 1980-03-31 1982-01-28 Jenoptik Jena Gmbh "Resonance absorber"
US4377324A (en) 1980-08-04 1983-03-22 Honeywell Inc. Graded index Fabry-Perot optical filter device
US4441791A (en) 1980-09-02 1984-04-10 Texas Instruments Incorporated Deformable mirror light modulator
FR2506026B1 (en) 1981-05-18 1983-10-14 Radant Etudes
NL8103377A (en) 1981-07-16 1983-02-16 Philips Nv A display device.
US4571603A (en) 1981-11-03 1986-02-18 Texas Instruments Incorporated Deformable mirror electrostatic printer
US4445050A (en) 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
NL8200354A (en) 1982-02-01 1983-09-01 Philips Nv A passive display device.
US4500171A (en) 1982-06-02 1985-02-19 Texas Instruments Incorporated Process for plastic LCD fill hole sealing
US4482213A (en) 1982-11-23 1984-11-13 Texas Instruments Incorporated Perimeter seal reinforcement holes for plastic LCDs
US4863245A (en) 1984-02-28 1989-09-05 Exxon Research And Engineering Company Superlattice electrooptic devices
US4566935A (en) 1984-07-31 1986-01-28 Texas Instruments Incorporated Spatial light modulator and method
US4710732A (en) 1984-07-31 1987-12-01 Texas Instruments Incorporated Spatial light modulator and method
US5061049A (en) 1984-08-31 1991-10-29 Texas Instruments Incorporated Spatial light modulator and method
US5096279A (en) 1984-08-31 1992-03-17 Texas Instruments Incorporated Spatial light modulator and method
US4596992A (en) 1984-08-31 1986-06-24 Texas Instruments Incorporated Linear spatial light modulator and printer
US4560435A (en) 1984-10-01 1985-12-24 International Business Machines Corporation Composite back-etch/lift-off stencil for proximity effect minimization
US4615595A (en) 1984-10-10 1986-10-07 Texas Instruments Incorporated Frame addressed spatial light modulator
US4655554A (en) 1985-03-06 1987-04-07 The United States Of America As Represented By The Secretary Of The Air Force Spatial light modulator having a capacitively coupled photoconductor
US5172262A (en) 1985-10-30 1992-12-15 Texas Instruments Incorporated Spatial light modulator and method
US4662746A (en) 1985-10-30 1987-05-05 Texas Instruments Incorporated Spatial light modulator and method
GB2186708B (en) 1985-11-26 1990-07-11 Sharp Kk A variable interferometric device and a process for the production of the same
US7123216B1 (en) 1994-05-05 2006-10-17 Idc, Llc Photonic MEMS and structures
US7830587B2 (en) 1993-03-17 2010-11-09 Qualcomm Mems Technologies, Inc. Method and device for modulating light with semiconductor substrate
US6680792B2 (en) 1994-05-05 2004-01-20 Iridigm Display Corporation Interferometric modulation of radiation
US6710908B2 (en) 1994-05-05 2004-03-23 Iridigm Display Corporation Controlling micro-electro-mechanical cavities
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7738157B2 (en) 1994-05-05 2010-06-15 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US6040937A (en) 1994-05-05 2000-03-21 Etalon, Inc. Interferometric modulation
US7808694B2 (en) 1994-05-05 2010-10-05 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7826120B2 (en) 1994-05-05 2010-11-02 Qualcomm Mems Technologies, Inc. Method and device for multi-color interferometric modulation
US8081369B2 (en) 1994-05-05 2011-12-20 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7852545B2 (en) 1994-05-05 2010-12-14 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US5835255A (en) * 1986-04-23 1998-11-10 Etalon, Inc. Visible spectrum modulator arrays
US7460291B2 (en) * 1994-05-05 2008-12-02 Idc, Llc Separable modulator
GB8610129D0 (en) 1986-04-25 1986-05-29 Secr Defence Electro-optical device
US4748366A (en) 1986-09-02 1988-05-31 Taylor George W Novel uses of piezoelectric materials for creating optical effects
US4786128A (en) 1986-12-02 1988-11-22 Quantum Diagnostics, Ltd. Device for modulating and reflecting electromagnetic radiation employing electro-optic layer having a variable index of refraction
NL8701138A (en) 1987-05-13 1988-12-01 Philips Nv Electroscopic picture display device.
US5091983A (en) 1987-06-04 1992-02-25 Walter Lukosz Optical modulation apparatus and measurement method
US4857978A (en) 1987-08-11 1989-08-15 North American Philips Corporation Solid state light modulator incorporating metallized gel and method of metallization
US4900136A (en) 1987-08-11 1990-02-13 North American Philips Corporation Method of metallizing silica-containing gel and solid state light modulator incorporating the metallized gel
US4956619A (en) 1988-02-19 1990-09-11 Texas Instruments Incorporated Spatial light modulator
US4856863A (en) 1988-06-22 1989-08-15 Texas Instruments Incorporated Optical fiber interconnection network including spatial light modulator
US5028939A (en) 1988-08-23 1991-07-02 Texas Instruments Incorporated Spatial light modulator system
US4925259A (en) 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
US4982184A (en) 1989-01-03 1991-01-01 General Electric Company Electrocrystallochromic display and element
US4973131A (en) 1989-02-03 1990-11-27 Mcdonnell Douglas Corporation Modulator mirror
US5272473A (en) 1989-02-27 1993-12-21 Texas Instruments Incorporated Reduced-speckle display system
US5214420A (en) 1989-02-27 1993-05-25 Texas Instruments Incorporated Spatial light modulator projection system with random polarity light
US5214419A (en) 1989-02-27 1993-05-25 Texas Instruments Incorporated Planarized true three dimensional display
US5206629A (en) 1989-02-27 1993-04-27 Texas Instruments Incorporated Spatial light modulator and memory for digitized video display
US5192946A (en) 1989-02-27 1993-03-09 Texas Instruments Incorporated Digitized color video display system
US5162787A (en) 1989-02-27 1992-11-10 Texas Instruments Incorporated Apparatus and method for digitized video system utilizing a moving display surface
US5079544A (en) 1989-02-27 1992-01-07 Texas Instruments Incorporated Standard independent digitized video system
US5287096A (en) 1989-02-27 1994-02-15 Texas Instruments Incorporated Variable luminosity display system
US5170156A (en) 1989-02-27 1992-12-08 Texas Instruments Incorporated Multi-frequency two dimensional display system
US4900395A (en) 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5022745A (en) 1989-09-07 1991-06-11 Massachusetts Institute Of Technology Electrostatically deformable single crystal dielectrically coated mirror
US4954789A (en) 1989-09-28 1990-09-04 Texas Instruments Incorporated Spatial light modulator
US5185660A (en) 1989-11-01 1993-02-09 Aura Systems, Inc. Actuated mirror optical intensity modulation
US5126836A (en) 1989-11-01 1992-06-30 Aura Systems, Inc. Actuated mirror optical intensity modulation
US5124834A (en) 1989-11-16 1992-06-23 General Electric Company Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same
US5037173A (en) 1989-11-22 1991-08-06 Texas Instruments Incorporated Optical interconnection network
JP2910114B2 (en) 1990-01-20 1999-06-23 ソニー株式会社 Electronics
US5500635A (en) 1990-02-20 1996-03-19 Mott; Jonathan C. Products incorporating piezoelectric material
CH682523A5 (en) 1990-04-20 1993-09-30 Suisse Electronique Microtech A modulation matrix addressed light.
GB9012099D0 (en) 1990-05-31 1990-07-18 Kodak Ltd Optical article for multicolour imaging
US5099353A (en) 1990-06-29 1992-03-24 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5216537A (en) 1990-06-29 1993-06-01 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5018256A (en) 1990-06-29 1991-05-28 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
EP0467048B1 (en) 1990-06-29 1995-09-20 Texas Instruments Incorporated Field-updated deformable mirror device
US5142405A (en) 1990-06-29 1992-08-25 Texas Instruments Incorporated Bistable dmd addressing circuit and method
US5083857A (en) 1990-06-29 1992-01-28 Texas Instruments Incorporated Multi-level deformable mirror device
US5153771A (en) 1990-07-18 1992-10-06 Northrop Corporation Coherent light modulation and detector
US5062689A (en) 1990-08-21 1991-11-05 Koehler Dale R Electrostatically actuatable light modulating device
US5148157A (en) 1990-09-28 1992-09-15 Texas Instruments Incorporated Spatial light modulator with full complex light modulation capability
US5034351A (en) 1990-10-01 1991-07-23 Motorola, Inc. Process for forming a feature on a substrate without recessing the surface of the substrate
US5192395A (en) 1990-10-12 1993-03-09 Texas Instruments Incorporated Method of making a digital flexure beam accelerometer
US5044736A (en) 1990-11-06 1991-09-03 Motorola, Inc. Configurable optical filter or display
US5233459A (en) 1991-03-06 1993-08-03 Massachusetts Institute Of Technology Electric display device
CA2063744C (en) 1991-04-01 2002-10-08 Paul M. Urbanus Digital micromirror device architecture and timing for use in a pulse-width modulated display system
US5142414A (en) 1991-04-22 1992-08-25 Koehler Dale R Electrically actuatable temporal tristimulus-color device
US5226099A (en) 1991-04-26 1993-07-06 Texas Instruments Incorporated Digital micromirror shutter device
US5179274A (en) 1991-07-12 1993-01-12 Texas Instruments Incorporated Method for controlling operation of optical systems and devices
US5287215A (en) 1991-07-17 1994-02-15 Optron Systems, Inc. Membrane light modulation systems
US5170283A (en) 1991-07-24 1992-12-08 Northrop Corporation Silicon spatial light modulator
US5240818A (en) 1991-07-31 1993-08-31 Texas Instruments Incorporated Method for manufacturing a color filter for deformable mirror device
US5168406A (en) 1991-07-31 1992-12-01 Texas Instruments Incorporated Color deformable mirror device and method for manufacture
US5254980A (en) 1991-09-06 1993-10-19 Texas Instruments Incorporated DMD display system controller
US5315370A (en) 1991-10-23 1994-05-24 Bulow Jeffrey A Interferometric modulator for optical signal processing
US5361383A (en) 1991-10-30 1994-11-01 Hughes Aircraft Company Optical fiber having internal partial mirrors and interferometer using same
US5233385A (en) 1991-12-18 1993-08-03 Texas Instruments Incorporated White light enhanced color field sequential projection
US5233456A (en) 1991-12-20 1993-08-03 Texas Instruments Incorporated Resonant mirror and method of manufacture
US5228013A (en) 1992-01-10 1993-07-13 Bik Russell J Clock-painting device and method for indicating the time-of-day with a non-traditional, now analog artistic panel of digital electronic visual displays
US5296950A (en) 1992-01-31 1994-03-22 Texas Instruments Incorporated Optical signal free-space conversion board
US5231532A (en) 1992-02-05 1993-07-27 Texas Instruments Incorporated Switchable resonant filter for optical radiation
EP0562424B1 (en) 1992-03-25 1997-05-28 Texas Instruments Incorporated Embedded optical calibration system
US5312513A (en) 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
US5311360A (en) 1992-04-28 1994-05-10 The Board Of Trustees Of The Leland Stanford, Junior University Method and apparatus for modulating a light beam
TW245772B (en) 1992-05-19 1995-04-21 Akzo Nv
US5638084A (en) 1992-05-22 1997-06-10 Dielectric Systems International, Inc. Lighting-independent color video display
US5818095A (en) 1992-08-11 1998-10-06 Texas Instruments Incorporated High-yield spatial light modulator with light blocking layer
US5293272A (en) 1992-08-24 1994-03-08 Physical Optics Corporation High finesse holographic fabry-perot etalon and method of fabricating
US5325116A (en) 1992-09-18 1994-06-28 Texas Instruments Incorporated Device for writing to and reading from optical storage media
US5296775A (en) 1992-09-24 1994-03-22 International Business Machines Corporation Cooling microfan arrangements and process
US5353114A (en) 1992-11-24 1994-10-04 At&T Bell Laboratories Opto-electronic interferometic logic
FI96450C (en) 1993-01-13 1996-06-25 Vaisala Oy The single-channel gas concentration measurement method and apparatus
JP3240724B2 (en) 1993-02-09 2001-12-25 ソニー株式会社 Wiring formation method
US20010003487A1 (en) 1996-11-05 2001-06-14 Mark W. Miles Visible spectrum modulator arrays
US5337191A (en) 1993-04-13 1994-08-09 Photran Corporation Broad band pass filter including metal layers and dielectric layers of alternating refractive index
JP3524122B2 (en) 1993-05-25 2004-05-10 キヤノン株式会社 The display control device
US5559358A (en) 1993-05-25 1996-09-24 Honeywell Inc. Opto-electro-mechanical device or filter, process for making, and sensors made therefrom
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5526172A (en) 1993-07-27 1996-06-11 Texas Instruments Incorporated Microminiature, monolithic, variable electrical signal processor and apparatus including same
US5894686A (en) 1993-11-04 1999-04-20 Lumitex, Inc. Light distribution/information display systems
FI94804C (en) 1994-02-17 1995-10-25 Vaisala Oy The electrically adjustable surface micromechanical Fabry-Perot interferometer for use in optical material analysis
US5526327A (en) 1994-03-15 1996-06-11 Cordova, Jr.; David J. Spatial displacement time display
US5796378A (en) 1994-03-29 1998-08-18 Casio Computer Co., Ltd. Birifringence control type liquid crystal display device and apparatus and method of driving the same
US5665997A (en) 1994-03-31 1997-09-09 Texas Instruments Incorporated Grated landing area to eliminate sticking of micro-mechanical devices
US5457900A (en) 1994-03-31 1995-10-17 Roy; Avery J. Footwear display device
EP0711426B1 (en) 1994-05-26 2000-08-09 Philips Electronics N.V. Image projection device
US5920418A (en) 1994-06-21 1999-07-06 Matsushita Electric Industrial Co., Ltd. Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator
US5636052A (en) 1994-07-29 1997-06-03 Lucent Technologies Inc. Direct view display based on a micromechanical modulation
US5485304A (en) 1994-07-29 1996-01-16 Texas Instruments, Inc. Support posts for micro-mechanical devices
US5544268A (en) 1994-09-09 1996-08-06 Deacon Research Display panel with electrically-controlled waveguide-routing
US5528707A (en) 1994-09-30 1996-06-18 Honeywell Inc. Bidirectional optical modulator having lightwave signal conservation
FR2726960B1 (en) 1994-11-10 1996-12-13 Thomson Csf A method of making the magnetoresistive transducers
JPH08153700A (en) 1994-11-25 1996-06-11 Semiconductor Energy Lab Co Ltd Anisotropic etching of electrically conductive coating
US5661592A (en) 1995-06-07 1997-08-26 Silicon Light Machines Method of making and an apparatus for a flat diffraction grating light valve
US5835256A (en) 1995-06-19 1998-11-10 Reflectivity, Inc. Reflective spatial light modulator with encapsulated micro-mechanical elements
US6046840A (en) 1995-06-19 2000-04-04 Reflectivity, Inc. Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements
KR100213026B1 (en) 1995-07-27 1999-08-02 윤종용 Dmd and fabrication method for dmd
US6324192B1 (en) 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
GB9522135D0 (en) 1995-10-30 1996-01-03 John Mcgavigan Holdings Limite Display panels
JPH09127551A (en) 1995-10-31 1997-05-16 Sharp Corp Semiconductor device and active matrix substrate
US5999306A (en) 1995-12-01 1999-12-07 Seiko Epson Corporation Method of manufacturing spatial light modulator and electronic device employing it
US5889568A (en) 1995-12-12 1999-03-30 Rainbow Displays Inc. Tiled flat panel displays
US5825528A (en) 1995-12-26 1998-10-20 Lucent Technologies Inc. Phase-mismatched fabry-perot cavity micromechanical modulator
US5751469A (en) 1996-02-01 1998-05-12 Lucent Technologies Inc. Method and apparatus for an improved micromechanical modulator
JP3597305B2 (en) 1996-03-05 2004-12-08 株式会社半導体エネルギー研究所 The liquid crystal display device and a manufacturing method thereof
US5867301A (en) 1996-04-22 1999-02-02 Engle; Craig D. Phase modulating device
US5710656A (en) 1996-07-30 1998-01-20 Lucent Technologies Inc. Micromechanical optical modulator having a reduced-mass composite membrane
US5838484A (en) 1996-08-19 1998-11-17 Lucent Technologies Inc. Micromechanical optical modulator with linear operating characteristic
GB9619781D0 (en) 1996-09-23 1996-11-06 Secr Defence Multi layer interference coatings
US5786927A (en) 1997-03-12 1998-07-28 Lucent Technologies Inc. Gas-damped micromechanical structure
US6782240B1 (en) 2000-04-27 2004-08-24 Joseph A Tabe Megatel communication information system
US6407851B1 (en) * 2000-08-01 2002-06-18 Mohammed N. Islam Micromechanical optical switch
DE10228946B4 (en) * 2002-06-28 2004-08-26 Universität Bremen An optical modulator, display, use of an optical modulator and method for producing an optical modulator
US7370185B2 (en) * 2003-04-30 2008-05-06 Hewlett-Packard Development Company, L.P. Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers
US7256922B2 (en) * 2004-07-02 2007-08-14 Idc, Llc Interferometric modulators with thin film transistors
US8138588B2 (en) * 2006-12-21 2012-03-20 Texas Instruments Incorporated Package stiffener and a packaged device using the same

Cited By (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110289B2 (en) 1998-04-08 2015-08-18 Qualcomm Mems Technologies, Inc. Device for modulating light with multiple electrodes
US7704772B2 (en) 2004-05-04 2010-04-27 Qualcomm Mems Technologies, Inc. Method of manufacture for microelectromechanical devices
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7663794B2 (en) 2004-09-27 2010-02-16 Qualcomm Mems Technologies, Inc. Methods and devices for inhibiting tilting of a movable element in a MEMS device
US9097885B2 (en) 2004-09-27 2015-08-04 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US9086564B2 (en) 2004-09-27 2015-07-21 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US9001412B2 (en) 2004-09-27 2015-04-07 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8970939B2 (en) 2004-09-27 2015-03-03 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US8885244B2 (en) 2004-09-27 2014-11-11 Qualcomm Mems Technologies, Inc. Display device
US8638491B2 (en) 2004-09-27 2014-01-28 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US7889415B2 (en) 2004-09-27 2011-02-15 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US8405899B2 (en) 2004-09-27 2013-03-26 Qualcomm Mems Technologies, Inc Photonic MEMS and structures
US7787173B2 (en) 2004-09-27 2010-08-31 Qualcomm Mems Technologies, Inc. System and method for multi-level brightness in interferometric modulation
US8390547B2 (en) 2004-09-27 2013-03-05 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US7839557B2 (en) 2004-09-27 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US8243360B2 (en) 2004-09-27 2012-08-14 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US8213075B2 (en) 2004-09-27 2012-07-03 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US8289613B2 (en) 2004-09-27 2012-10-16 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8081370B2 (en) 2004-09-27 2011-12-20 Qualcomm Mems Technologies, Inc. Support structures for electromechanical systems and methods of fabricating the same
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US8035883B2 (en) 2004-09-27 2011-10-11 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7999993B2 (en) 2004-09-27 2011-08-16 Qualcomm Mems Technologies, Inc. Reflective display device having viewable display on both sides
US7982700B2 (en) 2004-09-27 2011-07-19 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US7924494B2 (en) 2004-09-27 2011-04-12 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7948671B2 (en) 2004-09-27 2011-05-24 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7884989B2 (en) 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
US7460292B2 (en) 2005-06-03 2008-12-02 Qualcomm Mems Technologies, Inc. Interferometric modulator with internal polarization and drive method
US8971675B2 (en) 2006-01-13 2015-03-03 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US8098416B2 (en) 2006-06-01 2012-01-17 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7952787B2 (en) 2006-06-30 2011-05-31 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US8102590B2 (en) 2006-06-30 2012-01-24 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US8964280B2 (en) 2006-06-30 2015-02-24 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US7742220B2 (en) 2007-03-28 2010-06-22 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing conducting layers separated by stops
US7715085B2 (en) 2007-05-09 2010-05-11 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane and a mirror
US7889417B2 (en) 2007-05-09 2011-02-15 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane
US8098417B2 (en) 2007-05-09 2012-01-17 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane
US20080316566A1 (en) * 2007-06-19 2008-12-25 Qualcomm Incorporated High aperture-ratio top-reflective am-imod displays
US7782517B2 (en) 2007-06-21 2010-08-24 Qualcomm Mems Technologies, Inc. Infrared and dual mode displays
US8368997B2 (en) 2007-07-02 2013-02-05 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7920319B2 (en) 2007-07-02 2011-04-05 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8081373B2 (en) 2007-07-31 2011-12-20 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US8736949B2 (en) 2007-07-31 2014-05-27 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US8072402B2 (en) 2007-08-29 2011-12-06 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
US7773286B2 (en) 2007-09-14 2010-08-10 Qualcomm Mems Technologies, Inc. Periodic dimple array
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
US8797628B2 (en) 2007-10-19 2014-08-05 Qualcomm Memstechnologies, Inc. Display with integrated photovoltaic device
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US7715079B2 (en) 2007-12-07 2010-05-11 Qualcomm Mems Technologies, Inc. MEMS devices requiring no mechanical support
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US8174752B2 (en) 2008-03-07 2012-05-08 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US8693084B2 (en) 2008-03-07 2014-04-08 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US8068269B2 (en) 2008-03-27 2011-11-29 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US7969638B2 (en) 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US7746539B2 (en) 2008-06-25 2010-06-29 Qualcomm Mems Technologies, Inc. Method for packing a display device and the device obtained thereof
US7768690B2 (en) 2008-06-25 2010-08-03 Qualcomm Mems Technologies, Inc. Backlight displays
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US7859740B2 (en) 2008-07-11 2010-12-28 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US8988760B2 (en) 2008-07-17 2015-03-24 Qualcomm Mems Technologies, Inc. Encapsulated electromechanical devices
US7855826B2 (en) 2008-08-12 2010-12-21 Qualcomm Mems Technologies, Inc. Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
US8979349B2 (en) 2009-05-29 2015-03-17 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US9121979B2 (en) 2009-05-29 2015-09-01 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US8088692B2 (en) * 2009-07-10 2012-01-03 National Tsing Hua University Method for fabricating a multilayer microstructure with balancing residual stress capability
US20110008962A1 (en) * 2009-07-10 2011-01-13 Ying-Jui Huang Method for fabricating a multilayer microstructure with balancing residual stress capability
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US8817357B2 (en) 2010-04-09 2014-08-26 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of forming the same
US8797632B2 (en) 2010-08-17 2014-08-05 Qualcomm Mems Technologies, Inc. Actuation and calibration of charge neutral electrode of a display device
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9081188B2 (en) 2011-11-04 2015-07-14 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US20150241735A1 (en) * 2012-06-08 2015-08-27 Samsung Display Co., Ltd. Display panel, display apparatus having the same and method of manufacturing the same
US9261729B2 (en) * 2012-06-08 2016-02-16 Samsung Display Co., Ltd. Display panel, display apparatus having the same and method of manufacturing the same

Also Published As

Publication number Publication date
US7852544B2 (en) 2010-12-14
TWI358550B (en) 2012-02-21
CA2536145A1 (en) 2005-03-03
IL173672D0 (en) 2006-07-05
US20100214645A1 (en) 2010-08-26
EP1656579A1 (en) 2006-05-17
WO2005019899A1 (en) 2005-03-03
KR20060098362A (en) 2006-09-18
JP4468307B2 (en) 2010-05-26
US7672035B2 (en) 2010-03-02
BRPI0413664A (en) 2006-10-24
CN1853130A (en) 2006-10-25
JP2006514756A (en) 2006-05-11
US7460291B2 (en) 2008-12-02
CA2536145C (en) 2012-04-03
RU2006108553A (en) 2007-10-20
US20040051929A1 (en) 2004-03-18
AU2004266407A1 (en) 2005-03-03
RU2351969C2 (en) 2009-04-10
TW200517701A (en) 2005-06-01
US20090080060A1 (en) 2009-03-26

Similar Documents

Publication Publication Date Title
US7616369B2 (en) Film stack for manufacturing micro-electromechanical systems (MEMS) devices
US8289613B2 (en) Electromechanical device with optical function separated from mechanical and electrical function
US7924494B2 (en) Apparatus and method for reducing slippage between structures in an interferometric modulator
US8344470B2 (en) Electromechanical devices having support structures
CN1289926C (en) Wavelength-variable filter and its making method
US6825057B1 (en) Thermal membrane sensor and method for the production thereof
EP1643288A2 (en) Inverse interferometric modulator device
CN1289927C (en) Optical tunable filter and method of manufacturing the same
US7978395B2 (en) Capacitive MEMS device with programmable offset voltage control
EP1645902A2 (en) Selectable capacitance circuit
JP3923953B2 (en) Interferometric modulator pixels and a manufacturing method thereof
Lee et al. Micromachining applications of a high resolution ultrathick photoresist
US7532386B2 (en) Process for modifying offset voltage characteristics of an interferometric modulator
US6639289B1 (en) Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas
EP1640766A2 (en) Method and device for corner interferometric modulation
US20050170670A1 (en) Patterning of sacrificial materials
US8077379B2 (en) Interferometric optical display system with broadband characteristics
JP4210245B2 (en) Wavelength tunable filter and detector
EP1640319A2 (en) Method of making micromechanical interferometric apparatus element
JP3962028B2 (en) Interferometric modulator pixels and their preparation
US6800210B2 (en) Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US6970281B2 (en) Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
CN101688974B (en) Integrated imods and solar cells on a substrate
US20070249079A1 (en) Non-planar surface structures and process for microelectromechanical systems
US7660058B2 (en) Methods for etching layers within a MEMS device to achieve a tapered edge

Legal Events

Date Code Title Description
AS Assignment

Owner name: QUALCOMM MEMS TECHNOLOGIES, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:IDC, LLC;REEL/FRAME:039654/0884

Effective date: 20090925

AS Assignment

Owner name: SNAPTRACK, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:QUALCOMM MEMS TECHNOLOGIES, INC.;REEL/FRAME:039891/0001

Effective date: 20160830