US20060060907A1 - Methods of forming integrated circuit devices with metal-insulator-metal capacitors - Google Patents
Methods of forming integrated circuit devices with metal-insulator-metal capacitors Download PDFInfo
- Publication number
- US20060060907A1 US20060060907A1 US11/273,505 US27350505A US2006060907A1 US 20060060907 A1 US20060060907 A1 US 20060060907A1 US 27350505 A US27350505 A US 27350505A US 2006060907 A1 US2006060907 A1 US 2006060907A1
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- layer
- forming
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- etch stopper
- ohmic
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- 239000003990 capacitor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 title claims description 45
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000010948 rhodium Substances 0.000 claims description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 12
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims description 11
- 239000005368 silicate glass Substances 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052762 osmium Inorganic materials 0.000 claims description 8
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- 229910052697 platinum Inorganic materials 0.000 claims description 8
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- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 133
- 239000004065 semiconductor Substances 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910002938 (Ba,Sr)TiO3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910020294 Pb(Zr,Ti)O3 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
Definitions
- the present invention relates to integrated circuit devices and methods of forming the same, and more particularly, to integrated circuit devices with capacitors and methods of forming the same.
- a conventional DRAM dynamic random access memory
- a third technique is to reduce the thickness of a dielectric layer using materials such as tantalum oxide.
- An SIS or MIS structure employing polysilicon as an electrode material may be fabricated relatively easily. Additionally, an SIS or MIS structure can typically be fabricated using existing processes. However, when an electric field is applied to an SIS or MIS structure, a depletion area typically is formed in the polysilicon, and this depletion area and the insulator are connected parallel to each other, which can thereby decrease the entire capacitance. Additionally, when polysilicon layer is used as a bottom electrode in the structure, an oxide may form at a surface of the bottom electrode of the polysilicon, which can increase the total thickness of the dielectric layer. This can decrease the total capacitance.
- a typical MIM structure is typically less vulnerable to electrode oxidation.
- an MIM structure may be difficult to fabricate using existing processes.
- a typical DRAM device having an MIM structure includes a buried contact plug that connects the capacitor of the MIM structure to a transistor on a semiconductor substrate.
- the buried contact plug is typically formed of polysilicon, because polysilicon generally has a superior gap-fill characteristic and because resistance of polysilicon can generally be easily controlled.
- the DRAM device typically also includes an ohmic layer that is used to overcome resistance between the polysilicon and the metal. Additionally, the DRAM device may employ a barrier layer in order to prevent the buried contact plug from being oxidized.
- conventional processes for forming the ohmic layer and the barrier layer between the buried contact plug and the metal bottom electrode may be complex, involving recess and planarization steps.
- an integrated circuit device includes a microelectronic substrate and a dielectric layer on the substrate.
- a conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening.
- An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern.
- a concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate.
- a capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode.
- Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug.
- a metal etch stopper pattern may be interposed between the first capacitor electrode and the barrier pattern.
- an integrated circuit device includes a microelectronic substrate and a dielectric layer on the substrate.
- a conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening.
- Stacked ohmic and barrier patterns are disposed on the pad portion of the plug and have sidewalls substantially coplanar with a sidewall of the pad portion.
- a first capacitor electrode disposed on the barrier pattern, a capacitor dielectric layer is disposed on the first capacitor electrode, and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode.
- a dielectric layer is formed on a substrate, and a conductive contact plug, ohmic pattern and a barrier pattern are formed, wherein the ohmic pattern and the barrier pattern are disposed on a widened pad portion of the plug that extends on to the dielectric layer.
- a concave first capacitor electrode is formed on the barrier pattern and defines a cavity opening away from the substrate.
- a capacitor dielectric layer is formed conforming to a surface of the first capacitor electrode, and a second capacitor electrode is formed on the capacitor dielectric layer opposite the first capacitor electrode.
- the conductive contact plug, ohmic pattern and barrier pattern may be formed by forming the opening in the dielectric layer, forming a conductive layer on the dielectric layer and in the opening, forming an ohmic layer on the conductive layer, forming a barrier layer on the ohmic layer, forming a metal etch stopper layer on the barrier layer, forming a mask on the metal etch stopper layer, and etching the metal etch stopper layer, the barrier layer, the ohmic layer and the conductive layer using the mask to form the conductive contact plug, the ohmic pattern on the pad portion of the contact plug, the barrier pattern on the ohmic pattern, and a metal etch stopper pattern on the barrier pattern.
- the concave first capacitor electrode may be formed by forming an etch stopper layer conforming to the metal etch stopper pattern, the barrier pattern, the ohmic pattern and the pad portion of the contact plug, forming a mold layer on the etch stopper layer, etching the mold layer to form an opening therein using the etch stopper layer as an etching stopper, extending the opening through the etch stopper layer by etching the exposed portion of the etch stopper layer using the metal etch stopper pattern as an etching stopper, forming a conductive layer on the mold layer and conforming to a sidewall of the opening through the mold layer and the etch stopper layer and the exposed portion of the metal etch stopper pattern, and planarizing to form the first capacitor electrode.
- a dielectric layer is formed on a substrate.
- a conductive plug having a widened pad portion and stacked ohmic and barrier patterns disposed on the widened pad portion of the plug and having sidewalls substantially coplanar with a sidewall of the pad portion are formed.
- a first capacitor electrode is formed on the barrier pattern, a capacitor dielectric layer is formed on the first capacitor electrode, and a second capacitor electrode is formed on the capacitor dielectric layer opposite the first capacitor electrode.
- FIG. 1 is a cross-sectional view of a semiconductor device according to some embodiments of the present invention.
- FIGS. 2 through 10 are cross-sectional views showing exemplary operations for forming the semiconductor device of FIG. 1 .
- FIG. 11 is a cross-sectional view of a semiconductor device according to further another embodiments of the present invention.
- FIG. 12 is a cross-sectional view showing operations for forming the semiconductor device of FIG. 11 .
- first and second are used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second without departing from the teachings of the present invention. Like numbers refer to like elements throughout. In the following description, a reference letter “A” indicates a cell array region and another reference letter “B” indicates a peripheral circuit region.
- FIG. 1 is a cross-sectional view of a semiconductor device according to first embodiments of the present invention.
- a plurality of gate patterns (not shown) is disposed on a semiconductor substrate 100 .
- a plurality of field oxide layers (not shown) is disposed at the semiconductor substrate 100 to define active regions. Impurity-doped regions (not shown) are in the active regions.
- An interlayer dielectric layer 110 is disposed on the semiconductor substrate 100 and a contact hole 120 exposes the impurity-doped region (not shown) in the semiconductor substrate 100 through the interlayer dielectric layer 110 .
- the interlayer dielectric layer 110 may include at least one material from a group including HSQ (Hydrogen Silsesquioxane), BPSG (Boron Phosphorus Silicate Glass), HDP (High density plasma) oxide, PETEOS (plasma enhanced tetraethyl orthosilicate), USG (Undoped Silicate Glass), PSG(Phosphorus Silicate Glass), PE(plasma-enhanced)-SiH 4 and Al 2 O 3 .
- HSQ Hydrogen Silsesquioxane
- BPSG Bicarbon Phosphorus Silicate Glass
- HDP High density plasma oxide
- PETEOS plasma enhanced tetraethyl orthosilicate
- USG Undoped Silicate Glass
- PSG(Phosphorus Silicate Glass) PE(plasma-enhanced)-SiH 4 and Al 2 O 3 .
- SAC self-aligned contacts
- a stud-shape buried contact plug 130 a fills the contact hole 120 and has a pad portion P protruding from the interlayer dielectric layer 110 and wider than the contact hole 120 .
- the buried contact plug 120 is electrically connected to the impurity-doped region (not shown) in the semiconductor substrate 100 .
- the stud-shape buried contact plug 130 a may include polysilicon, doped or undoped.
- An ohmic pattern 140 a , a barrier pattern 150 a and a metal etch stopper pattern 160 a are stacked on the pad portion P and aligned with the pad portion P.
- the ohmic pattern 140 a may include titanium silicide (TiSi X ).
- the barrier pattern 150 a may include at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tantalum aluminum nitride (TaAIN) and titanium aluminum nitride (TiAlN).
- the metal etch stopper pattern 160 a may include at least one material from a group including tungsten (W), aluminum (Al), copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni).
- a conductive pattern 130 b is stacked on the interlayer dielectric layer 110 and form a resistor R.
- an etch stopper 170 conforms to the upper surface and sidewall of the metal etch stopper pattern 160 a , the sidewall of the barrier pattern 150 a , the sidewall of the ohmic pattern 140 a and the sidewall of the pad portion P of the stud-shape buried contact plug 130 a .
- the etch stopper 170 covers the resistor R at the peripheral circuit region B.
- the etch stopper 170 may include silicon nitride (Si 3 N 4 ) and/or tantalum oxide (Ta 2 O 5 ).
- a concave bottom electrode 200 a is electrically connected to the stud-shape buried contact plug 130 a through the etch stopper 170 .
- the electrode 200 a defines a cavity that opens away from the substrate 100 .
- a dielectric layer 220 and an upper electrode 239 cover the bottom electrode 200 a and the etch stopper 170 .
- the bottom electrode 200 a and the upper electrode 230 may include at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni).
- a mold layer 180 may protect the resistor R at the peripheral circuit region B.
- the buried contact plug 130 a has a shape of stud with a pad portion P
- a desirable process margin can be obtained due to the pad portion P having a greater width than the rest of the buried contact plug 130 a.
- FIGS. 2 through 10 are cross-sectional views illustrating exemplary operations for forming the semiconductor device of FIG. 1 .
- an interlayer dielectric layer 110 is formed on a semiconductor substrate 100 .
- a plurality of field oxide layers may be formed on and/or in the semiconductor substrate 100 having the cell array region A and the peripheral circuit region B to define active regions.
- Gate patterns may be formed to cross over the active regions.
- Impurity-doped regions may be formed in the active regions adjacent the gate patterns.
- Self-aligned contacts (not shown) may be formed on the impurity-doped regions between the gate patterns.
- the interlayer dielectric layer 110 is patterned to form a contact hole 120 exposing the impurity-doped region in the semiconductor substrate 100 at the cell array region A.
- the contact hole 120 may expose the self-aligned contact.
- the interlayer dielectric layer 110 may be formed of a single layer or multiple layers including at least one material from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH 4 and Al 2 O 3 .
- a conductive layer 130 is formed on the interlayer dielectric layer 110 to fill the contact hole 120 .
- the conductive layer 130 may be formed of a polysilicon, doped or undoped.
- An ohmic layer 140 , a barrier layer 150 and a metal etch stopper layer 160 are sequentially formed on the conductive layer 130 .
- the ohmic layer 140 may be formed of titanium silicide.
- a titanium layer may be formed by, for example, a sputtering or a physical vapor deposition (PVD) method and an annealing process may be performed with respect to the titanium layer at a temperature of about 600 ⁇ 700° C. in nitrogen-enriched ambient.
- a titanium layer may be formed by a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) at a temperature of about 600 ⁇ 800° C. to form the ohmic layer 140 of a titanium silicide at the surface of the conductive layer 130 of the polysilicon.
- the barrier layer 150 may be formed of at least one material from a group including titanium nitride, tantalum nitride, tantalum aluminum nitride and titanium aluminum nitride.
- the metal etch stopper layer 160 may be formed of at least one material from a group including tungsten, aluminum, copper, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, platinum, iridium, osmium, rhodium, cobalt and nickel.
- the metal etch stopper layer 160 , the barrier layer 150 , the ohmic layer 140 and the conductive layer 130 are patterned to form a stud-shape buried contact plug 130 a having a pad portion P, an ohmic pattern 140 a , a barrier pattern 150 a and a metal etch stopper pattern 160 a at the cell array region A.
- a conductive pattern 130 b , an ohmic pattern 140 b , a barrier pattern 150 b and a metal etch stopper pattern 160 b form a resistor R at the peripheral circuit region B.
- the stud-shape buried contact plug 130 a and the conductive pattern 130 b are formed from the conductive layer 130 .
- the ohmic pattern 140 a functions to decrease contact resistance between the barrier pattern 150 a and the polysilicon contact plug 130 a .
- the barrier pattern 150 a inhibits penetration of oxygen and/or hydrogen into the contact plug 130 a .
- the metal etch stopper pattern 160 a acts as an etch stopper when a storage node hole for a bottom electrode is formed, as described in greater detail below.
- an etch stopper is formed on the semiconductor substrate 100 .
- the etch stopper 170 may include, for example, silicon nitride or tantalum oxide.
- a mold layer 180 is formed on the etch stopper 170 .
- the mold layer 180 may be formed of at least one material selected from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH 4 and Al 2 O 3 .
- the mold layer 180 and the etch stopper 170 are patterned to form a storage node hole 190 exposing the metal etch stopper pattern 160 a at the cell array region A.
- a bottom electrode layer 200 is formed on the surface of the interlayer dielectric layer 180 having the storage node hole 190 .
- the bottom electrode layer 200 may be formed of at least one material from a group including titanium nitride, tantalum nitride, tungsten nitride, ruthenium, platinum, iridium, osmium, rhodium, cobalt and nickel.
- a sacrificial layer 210 is formed on the bottom electrode layer 200 .
- the sacrificial layer 210 may be formed of, for example, HSQ by an SOG (Spin on Glass) process.
- a planarization process such as chemical mechanical polishing (CMP) is performed with respect to the sacrificial layer 210 and the bottom electrode layer 200 , thereby removing the sacrificial layer 210 and the bottom electrode layer 200 on the mold layer 180 and exposing the mold layer 180 .
- CMP chemical mechanical polishing
- the sacrificial pattern 210 a and the mold layer 180 in the bottom electrode 200 a are removed using, for example, a solution including fluoric acid (HF). If the sacrificial pattern 210 a and the mold layer 180 are formed of the same material, the layers 210 a and 180 can be simultaneously removed. Thus, a bottom electrode 200 a remains to connect with the metal etch stopper pattern 160 a through the etch stopper 170 . At the peripheral circuit region B, the mold layer 180 may remain to protect the resistor R.
- a solution including fluoric acid (HF) fluoric acid
- a dielectric layer ( 220 of FIG. 1 ) and an upper electrode ( 230 of FIG. 1 ) are formed to create a capacitor.
- the dielectric layer may be formed of Ta 2 O 5 or of a ferroelectric material , such as BST [(Ba,Sr)TiO 3 ] or PZT [Pb(Zr,Ti)O 3 ].
- the upper electrode may be formed of the same material as the bottom electrode.
- the upper electrode layer 230 is removed at the peripheral circuit region B as illustrated in FIG. 1 .
- the buried contact plug 130 a of polysilicon is formed to have a shape of a stud having a pad portion P, and the ohmic pattern 140 a is formed on the pad portion P on the interlayer dielectric layer 110 .
- a conventional recess process is not required, which can simplify the overall fabrication process.
- the pad portion P and the resistor R may be simultaneously formed with the buried portion of the contact plug 130 a , the overall fabrication process can be simplified and a desirable process margin can be obtained.
- FIG. 11 is a cross-sectional view of a semiconductor device according to second embodiments of the present invention.
- a support layer 175 is interposed between the dielectric layer 220 and the etch stopper 170 to support the bottom electrode 130 a .
- the support layer 175 may include at least one material from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH 4 and Al 2 O 3 .
- the other components apart from the support layer 175 may be identical to those described above with reference to FIG. 1 .
- FIG. 12 is a cross-sectional view illustrating exemplary operations for forming the semiconductor device of FIG. 11 .
- a support layer 175 and a mold layer 180 are sequentially formed and patterned to form a storage node hole 190 .
- the support layer 175 may be formed of a material having an etch selectivity with respect to the mold layer 180 .
- the support layer 175 may be formed of at least one material from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH 4 and Al 2 O 3 . If the support layer 175 is formed of the same material as the mold layer 180 , an etch stopper (not shown) may be formed on the support layer 175 . Subsequent steps may be identical to those described above with reference to FIGS. 4-10 .
- semiconductor devices and related methods provide a stud-shaped buried contact plug having a pad portion and ohmic and barrier patterns disposed on the pad portion. Therefore, a conventional recess process is not required, which can simplify the overall fabrication process. Additionally, because the contact plug, barrier pattern, ohmic pattern and peripheral resistor can be formed in the same patterning operation, the overall fabrication process can be simplified and a desirable process margin can be obtained.
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Abstract
A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.
Description
- This application is a divisional of U.S. application Ser. No. 10/807,000, filed Mar. 23, 2004, the disclosure of which is hereby incorporated herein by reference. This application also claims priority to Korean Application Serial No. 2003-42171, filed Jun. 26, 2003, the disclosure of which is also hereby incorporated herein by reference.
- The present invention relates to integrated circuit devices and methods of forming the same, and more particularly, to integrated circuit devices with capacitors and methods of forming the same.
- As the level of integration in integrated circuit memory devices has increased, much research and development has been directed toward reducing effective cell area. In these efforts, the unit area available for capacitor formation has decreased, thus creating a need for increased capacitance per unit area.
- There are several conventional techniques for obtaining sufficient capacitance. One technique is to modify the widely used cylinder structure to increase dielectric area. A second technique is to employ a dielectric layer having a high dielectric constant. For example, a conventional DRAM (dynamic random access memory) may employ a capacitor with an MIS (metal/insulator/silicon) or an MIM (metal/insulator/metal) structure with a dielectric layer including tantalum oxide (Ta2O5) or BST [(Ba,Sr)TiO3] having a higher dielectric constant than a triple layer of oxide/nitride/oxide, which may be used as a dielectric layer of an SIS (silicon/insulator/silicon) structure. A third technique is to reduce the thickness of a dielectric layer using materials such as tantalum oxide.
- An SIS or MIS structure employing polysilicon as an electrode material may be fabricated relatively easily. Additionally, an SIS or MIS structure can typically be fabricated using existing processes. However, when an electric field is applied to an SIS or MIS structure, a depletion area typically is formed in the polysilicon, and this depletion area and the insulator are connected parallel to each other, which can thereby decrease the entire capacitance. Additionally, when polysilicon layer is used as a bottom electrode in the structure, an oxide may form at a surface of the bottom electrode of the polysilicon, which can increase the total thickness of the dielectric layer. This can decrease the total capacitance.
- However, in a conventional MIM structure that employs metal electrodes, there typically is neither formation of a depletion layer nor a decrease of capacitance due to the depletion layer. Additionally, a typical MIM structure is typically less vulnerable to electrode oxidation. However, an MIM structure may be difficult to fabricate using existing processes.
- A typical DRAM device having an MIM structure includes a buried contact plug that connects the capacitor of the MIM structure to a transistor on a semiconductor substrate. The buried contact plug is typically formed of polysilicon, because polysilicon generally has a superior gap-fill characteristic and because resistance of polysilicon can generally be easily controlled. When a DRAM device includes a buried contact plug of polysilicon and a capacitor having an MIM structure, the DRAM device typically also includes an ohmic layer that is used to overcome resistance between the polysilicon and the metal. Additionally, the DRAM device may employ a barrier layer in order to prevent the buried contact plug from being oxidized. However, conventional processes for forming the ohmic layer and the barrier layer between the buried contact plug and the metal bottom electrode may be complex, involving recess and planarization steps.
- According to some embodiments of the present invention, an integrated circuit device includes a microelectronic substrate and a dielectric layer on the substrate. A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. A metal etch stopper pattern may be interposed between the first capacitor electrode and the barrier pattern.
- In further embodiments of the present invention, an integrated circuit device includes a microelectronic substrate and a dielectric layer on the substrate. A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. Stacked ohmic and barrier patterns are disposed on the pad portion of the plug and have sidewalls substantially coplanar with a sidewall of the pad portion. A first capacitor electrode disposed on the barrier pattern, a capacitor dielectric layer is disposed on the first capacitor electrode, and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode.
- According to some method embodiments of the present invention, a dielectric layer is formed on a substrate, and a conductive contact plug, ohmic pattern and a barrier pattern are formed, wherein the ohmic pattern and the barrier pattern are disposed on a widened pad portion of the plug that extends on to the dielectric layer. A concave first capacitor electrode is formed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer is formed conforming to a surface of the first capacitor electrode, and a second capacitor electrode is formed on the capacitor dielectric layer opposite the first capacitor electrode.
- The conductive contact plug, ohmic pattern and barrier pattern may be formed by forming the opening in the dielectric layer, forming a conductive layer on the dielectric layer and in the opening, forming an ohmic layer on the conductive layer, forming a barrier layer on the ohmic layer, forming a metal etch stopper layer on the barrier layer, forming a mask on the metal etch stopper layer, and etching the metal etch stopper layer, the barrier layer, the ohmic layer and the conductive layer using the mask to form the conductive contact plug, the ohmic pattern on the pad portion of the contact plug, the barrier pattern on the ohmic pattern, and a metal etch stopper pattern on the barrier pattern. The concave first capacitor electrode may be formed by forming an etch stopper layer conforming to the metal etch stopper pattern, the barrier pattern, the ohmic pattern and the pad portion of the contact plug, forming a mold layer on the etch stopper layer, etching the mold layer to form an opening therein using the etch stopper layer as an etching stopper, extending the opening through the etch stopper layer by etching the exposed portion of the etch stopper layer using the metal etch stopper pattern as an etching stopper, forming a conductive layer on the mold layer and conforming to a sidewall of the opening through the mold layer and the etch stopper layer and the exposed portion of the metal etch stopper pattern, and planarizing to form the first capacitor electrode.
- In further method embodiments, a dielectric layer is formed on a substrate. A conductive plug having a widened pad portion and stacked ohmic and barrier patterns disposed on the widened pad portion of the plug and having sidewalls substantially coplanar with a sidewall of the pad portion are formed. A first capacitor electrode is formed on the barrier pattern, a capacitor dielectric layer is formed on the first capacitor electrode, and a second capacitor electrode is formed on the capacitor dielectric layer opposite the first capacitor electrode.
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FIG. 1 is a cross-sectional view of a semiconductor device according to some embodiments of the present invention. -
FIGS. 2 through 10 are cross-sectional views showing exemplary operations for forming the semiconductor device ofFIG. 1 . -
FIG. 11 is a cross-sectional view of a semiconductor device according to further another embodiments of the present invention. -
FIG. 12 is a cross-sectional view showing operations for forming the semiconductor device ofFIG. 11 . - The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which typical and exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
- In the drawings, the thickness of layers and regions are exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. Furthermore, relative terms, such as “beneath”, may be used herein to describe one element's relationship to another elements as illustrated in the drawings. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the drawings. For example, if the device in the drawings is turned over, elements described as “below” other elements would then be oriented “above” the other elements. The exemplary term “below”, therefore, encompasses both an orientation of above and below.
- It will be understood that although the terms “first” and “second” are used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second without departing from the teachings of the present invention. Like numbers refer to like elements throughout. In the following description, a reference letter “A” indicates a cell array region and another reference letter “B” indicates a peripheral circuit region.
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FIG. 1 is a cross-sectional view of a semiconductor device according to first embodiments of the present invention. Referring toFIG. 1 , a plurality of gate patterns (not shown) is disposed on asemiconductor substrate 100. A plurality of field oxide layers (not shown) is disposed at thesemiconductor substrate 100 to define active regions. Impurity-doped regions (not shown) are in the active regions. Aninterlayer dielectric layer 110 is disposed on thesemiconductor substrate 100 and acontact hole 120 exposes the impurity-doped region (not shown) in thesemiconductor substrate 100 through theinterlayer dielectric layer 110. Theinterlayer dielectric layer 110 may include at least one material from a group including HSQ (Hydrogen Silsesquioxane), BPSG (Boron Phosphorus Silicate Glass), HDP (High density plasma) oxide, PETEOS (plasma enhanced tetraethyl orthosilicate), USG (Undoped Silicate Glass), PSG(Phosphorus Silicate Glass), PE(plasma-enhanced)-SiH4 and Al2O3. Although not illustrated inFIG. 1 , self-aligned contacts (SAC) are present between the gate patterns and thecontact hole 120 may expose the self-aligned contacts. - At the cell array region A, a stud-shape buried contact plug 130 a fills the
contact hole 120 and has a pad portion P protruding from theinterlayer dielectric layer 110 and wider than thecontact hole 120. The buriedcontact plug 120 is electrically connected to the impurity-doped region (not shown) in thesemiconductor substrate 100. The stud-shape buried contact plug 130 a may include polysilicon, doped or undoped. Anohmic pattern 140 a, abarrier pattern 150 a and a metaletch stopper pattern 160 a are stacked on the pad portion P and aligned with the pad portion P. Theohmic pattern 140 a may include titanium silicide (TiSiX). Thebarrier pattern 150 a may include at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tantalum aluminum nitride (TaAIN) and titanium aluminum nitride (TiAlN). The metaletch stopper pattern 160 a may include at least one material from a group including tungsten (W), aluminum (Al), copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni). At the peripheral circuit region B, aconductive pattern 130 b, anohmic pattern 140 b, abarrier pattern 150 b and a metaletch stopper pattern 160 b are stacked on theinterlayer dielectric layer 110 and form a resistor R. - At the cell array region A, an
etch stopper 170 conforms to the upper surface and sidewall of the metaletch stopper pattern 160 a, the sidewall of thebarrier pattern 150 a, the sidewall of theohmic pattern 140 a and the sidewall of the pad portion P of the stud-shape buried contact plug 130 a. Theetch stopper 170 covers the resistor R at the peripheral circuit region B. Theetch stopper 170 may include silicon nitride (Si3N4) and/or tantalum oxide (Ta2O5). Aconcave bottom electrode 200 a is electrically connected to the stud-shape buried contact plug 130 a through theetch stopper 170. Theelectrode 200 a defines a cavity that opens away from thesubstrate 100. Adielectric layer 220 and an upper electrode 239 cover thebottom electrode 200 a and theetch stopper 170. Thebottom electrode 200 a and theupper electrode 230 may include at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni). Amold layer 180 may protect the resistor R at the peripheral circuit region B. - In exemplary embodiments described below, because the buried contact plug 130 a has a shape of stud with a pad portion P, it is possible to form the buried contact plug 130 a, the metal
etch stopper pattern 160 a, thebarrier pattern 150 a, theohmic pattern 140 a and a resistor in the peripheral region B in the same patterning operation, e.g., by etching using a mask such that sidewalls of the pad portion P of the buried contact plug 130 a, the metaletch stopper pattern 160 a, thebarrier pattern 150 a, and theohmic pattern 140 a are substantially coplanar. A desirable process margin can be obtained due to the pad portion P having a greater width than the rest of the buried contact plug 130 a. -
FIGS. 2 through 10 are cross-sectional views illustrating exemplary operations for forming the semiconductor device ofFIG. 1 . Referring toFIG. 2 , aninterlayer dielectric layer 110 is formed on asemiconductor substrate 100. Before forming theinterlayer dielectric layer 110, a plurality of field oxide layers (not shown) may be formed on and/or in thesemiconductor substrate 100 having the cell array region A and the peripheral circuit region B to define active regions. Gate patterns (not shown) may be formed to cross over the active regions. Impurity-doped regions (not shown) may be formed in the active regions adjacent the gate patterns. Self-aligned contacts (not shown) may be formed on the impurity-doped regions between the gate patterns. - The
interlayer dielectric layer 110 is patterned to form acontact hole 120 exposing the impurity-doped region in thesemiconductor substrate 100 at the cell array region A. Thecontact hole 120 may expose the self-aligned contact. Theinterlayer dielectric layer 110 may be formed of a single layer or multiple layers including at least one material from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH4 and Al2O3. - Referring to
FIG. 3 , aconductive layer 130 is formed on theinterlayer dielectric layer 110 to fill thecontact hole 120. Theconductive layer 130 may be formed of a polysilicon, doped or undoped. Anohmic layer 140, abarrier layer 150 and a metaletch stopper layer 160 are sequentially formed on theconductive layer 130. Theohmic layer 140 may be formed of titanium silicide. In order to form theohmic layer 140, a titanium layer may be formed by, for example, a sputtering or a physical vapor deposition (PVD) method and an annealing process may be performed with respect to the titanium layer at a temperature of about 600˜700° C. in nitrogen-enriched ambient. Alternatively, a titanium layer may be formed by a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) at a temperature of about 600˜800° C. to form theohmic layer 140 of a titanium silicide at the surface of theconductive layer 130 of the polysilicon. Thebarrier layer 150 may be formed of at least one material from a group including titanium nitride, tantalum nitride, tantalum aluminum nitride and titanium aluminum nitride. The metaletch stopper layer 160 may be formed of at least one material from a group including tungsten, aluminum, copper, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, platinum, iridium, osmium, rhodium, cobalt and nickel. - Referring to
FIG. 4 , the metaletch stopper layer 160, thebarrier layer 150, theohmic layer 140 and theconductive layer 130 are patterned to form a stud-shape buried contact plug 130 a having a pad portion P, anohmic pattern 140 a, abarrier pattern 150 a and a metaletch stopper pattern 160 a at the cell array region A. Aconductive pattern 130 b, anohmic pattern 140 b, abarrier pattern 150 b and a metaletch stopper pattern 160 b form a resistor R at the peripheral circuit region B. The stud-shape buried contact plug 130 a and theconductive pattern 130 b are formed from theconductive layer 130. Theohmic pattern 140 a functions to decrease contact resistance between thebarrier pattern 150 a and the polysilicon contact plug 130 a. Thebarrier pattern 150 a inhibits penetration of oxygen and/or hydrogen into the contact plug 130 a. The metaletch stopper pattern 160 a acts as an etch stopper when a storage node hole for a bottom electrode is formed, as described in greater detail below. - Referring to
FIG. 5 , an etch stopper is formed on thesemiconductor substrate 100. Theetch stopper 170 may include, for example, silicon nitride or tantalum oxide. Amold layer 180 is formed on theetch stopper 170. Themold layer 180 may be formed of at least one material selected from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH4 and Al2O3. Referring toFIG. 6 , themold layer 180 and theetch stopper 170 are patterned to form astorage node hole 190 exposing the metaletch stopper pattern 160 a at the cell array region A. - Referring to
FIG. 7 , abottom electrode layer 200 is formed on the surface of theinterlayer dielectric layer 180 having thestorage node hole 190. Thebottom electrode layer 200 may be formed of at least one material from a group including titanium nitride, tantalum nitride, tungsten nitride, ruthenium, platinum, iridium, osmium, rhodium, cobalt and nickel. Referring toFIG. 8 , asacrificial layer 210 is formed on thebottom electrode layer 200. Thesacrificial layer 210 may be formed of, for example, HSQ by an SOG (Spin on Glass) process. - Referring to
FIG. 9 , a planarization process, such as chemical mechanical polishing (CMP), is performed with respect to thesacrificial layer 210 and thebottom electrode layer 200, thereby removing thesacrificial layer 210 and thebottom electrode layer 200 on themold layer 180 and exposing themold layer 180. As a result, abottom electrode 200 a and asacrificial pattern 210 a remain in thestorage node hole 190. - Referring to
FIG. 10 , thesacrificial pattern 210 a and themold layer 180 in thebottom electrode 200 a are removed using, for example, a solution including fluoric acid (HF). If thesacrificial pattern 210 a and themold layer 180 are formed of the same material, thelayers bottom electrode 200 a remains to connect with the metaletch stopper pattern 160 a through theetch stopper 170. At the peripheral circuit region B, themold layer 180 may remain to protect the resistor R. - Referring again to
FIG. 1 , a dielectric layer (220 ofFIG. 1 ) and an upper electrode (230 ofFIG. 1 ) are formed to create a capacitor. The dielectric layer may be formed of Ta2O5 or of a ferroelectric material , such as BST [(Ba,Sr)TiO3] or PZT [Pb(Zr,Ti)O3]. The upper electrode may be formed of the same material as the bottom electrode. Theupper electrode layer 230 is removed at the peripheral circuit region B as illustrated inFIG. 1 . - According to the above-described operations, the buried contact plug 130 a of polysilicon is formed to have a shape of a stud having a pad portion P, and the
ohmic pattern 140 a is formed on the pad portion P on theinterlayer dielectric layer 110. Thus, a conventional recess process is not required, which can simplify the overall fabrication process. Additionally, because the pad portion P and the resistor R may be simultaneously formed with the buried portion of the contact plug 130 a, the overall fabrication process can be simplified and a desirable process margin can be obtained. -
FIG. 11 is a cross-sectional view of a semiconductor device according to second embodiments of the present invention. Referring toFIG. 11 , asupport layer 175 is interposed between thedielectric layer 220 and theetch stopper 170 to support thebottom electrode 130 a. Thesupport layer 175 may include at least one material from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH4 and Al2O3. The other components apart from thesupport layer 175 may be identical to those described above with reference toFIG. 1 . -
FIG. 12 is a cross-sectional view illustrating exemplary operations for forming the semiconductor device ofFIG. 11 . Referring toFIG. 12 , which corresponding to the fabrication state ofFIG. 4 , asupport layer 175 and amold layer 180 are sequentially formed and patterned to form astorage node hole 190. Thesupport layer 175 may be formed of a material having an etch selectivity with respect to themold layer 180. Thesupport layer 175 may be formed of at least one material from a group including HSQ, BPSG, HDP oxide, PETEOS, USG, PSG, PE-SiH4 and Al2O3. If thesupport layer 175 is formed of the same material as themold layer 180, an etch stopper (not shown) may be formed on thesupport layer 175. Subsequent steps may be identical to those described above with reference toFIGS. 4-10 . - As discussed above with respect to
FIGS. 1 through 12 , semiconductor devices and related methods according to embodiments of the present invention provide a stud-shaped buried contact plug having a pad portion and ohmic and barrier patterns disposed on the pad portion. Therefore, a conventional recess process is not required, which can simplify the overall fabrication process. Additionally, because the contact plug, barrier pattern, ohmic pattern and peripheral resistor can be formed in the same patterning operation, the overall fabrication process can be simplified and a desirable process margin can be obtained. - In the drawings and specification, there have been disclosed typical embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
Claims (13)
1. A method of forming an integrated circuit capacitor, the method comprising:
forming a dielectric layer on a substrate;
forming a conductive contact plug extending through an opening in the dielectric layer to contact the substrate and including a widened pad portion extending onto the dielectric layer adjacent the opening and an ohmic pattern and a barrier pattern on the pad portion of the plug;
forming a concave first capacitor electrode on the barrier pattern and defining a cavity opening away from the substrate;
forming a capacitor dielectric layer conforming to a surface of the first capacitor electrode; and
forming a second capacitor electrode on the capacitor dielectric layer opposite the first capacitor electrode.
2. A method according to claim 1 , wherein forming a conductive contact plug extending through an opening in the dielectric layer to contact the substrate and including a widened pad portion extending onto the dielectric layer adjacent the opening and an ohmic pattern and a barrier pattern on the pad portion of the plug comprises:
forming the opening in the dielectric layer;
forming a conductive layer on the dielectric layer and in the opening;
forming an ohmic layer on the conductive layer;
forming a barrier layer on the ohmic layer;
forming a metal etch stopper layer on the barrier layer;
forming a mask on the metal etch stopper layer; and
patterning the metal etch stopper layer, the barrier layer, the ohmic layer and the conductive layer using the mask to form the conductive contact plug, the ohmic pattern on the pad portion of the contact plug, the barrier pattern on the ohmic pattern, and a metal etch stopper pattern on the barrier pattern.
3. A method according to claim 2 , wherein the conductive layer comprises polysilicon, wherein the ohmic layer comprises titanium silicide (TiSiX), and wherein the barrier layer comprises at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tantalum aluminum nitride (TaAIN) and titanium aluminum nitride (TiAlN).
4. A method according to claim 2 , wherein forming a concave first capacitor electrode comprises:
forming an etch stopper layer conforming to the metal etch stopper pattern, the barrier pattern, the ohmic pattern and the pad portion of the contact plug;
forming a mold layer on the etch stopper layer;
etching the mold layer to form an opening therein using the etch stopper layer as an etching stopper;
extending the opening through the etch stopper layer by etching the exposed portion of the etch stopper layer using the metal etch stopper pattern as an etching stopper;
forming a conductive layer on the mold layer and conforming to a sidewall of the opening through the mold layer and the etch stopper layer and the exposed portion of the metal etch stopper pattern; and
planarizing to form the first capacitor electrode.
5. A method according to claim 4 , wherein the conductive layer comprises at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni).
6. A method according to claim 4 , wherein the mold layer comprises at least one material from a group including Hydrogen Silsesquioxane (HSQ), Boron Phosphorus Silicate Glass (BPSG), High density plasma (HDP) oxide, plasma enhanced tetraethyl orthosilicate (PETEOS), Undoped Silicate Glass (USG), Phosphorus Silicate Glass (PSG), plasma-enhanced (PE)-SiH4 and aluminum oxide (Al2O3), wherein the etch stopper layer comprises at least one material from group including silicon nitride (Si3N4) and tantalum oxide (Ta2O5), and wherein the metal etch stopper layer comprises at least one material from a group including tungsten (W), aluminum (Al), copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni).
7. A method according to claim 1 , further comprising forming a support layer on the dielectric layer and laterally abutting a base of the concave first capacitor electrode.
8. A method of forming an integrated circuit capacitor, the method comprising:
forming a dielectric layer on a substrate;
forming a conductive contact plug extending through an opening in the dielectric layer to contact the substrate and including a widened pad portion extending onto the dielectric layer adjacent the opening and stacked ohmic and barrier patterns disposed on the pad portion of the plug and having sidewalls substantially coplanar with a sidewall of the pad portion;
forming a first capacitor electrode on the barrier pattern;
forming a capacitor dielectric layer on the first capacitor electrode; and
forming a second capacitor electrode on the capacitor dielectric layer opposite the first capacitor electrode.
9. A method according to claim 8 , wherein forming a conductive contact plug extending through an opening in the dielectric layer to contact the substrate and including a widened pad portion extending onto the dielectric layer adjacent the opening and stacked ohmic and barrier patterns disposed on the pad portion of the plug and having sidewalls substantially coplanar with a sidewall of the pad portion comprises:
forming an opening in the dielectric layer;
forming a conductive layer on the dielectric layer and in the opening;
forming an ohmic layer on the conductive layer;
forming a barrier layer on the ohmic layer;
forming a metal etch stopper layer on the barrier layer;
forming a mask on the metal etch stopper layer; and
patterning the metal etch stopper layer, the barrier layer, the ohmic layer and the conductive layer using the mask to form the conductive contact plug, the ohmic pattern on the pad portion of the contact plug, the barrier pattern on the ohmic pattern, and a metal etch stopper pattern on the barrier pattern.
10. A method according to claim 9 , wherein the conductive layer comprises polysilicon, wherein the ohmic layer comprises titanium silicide (TiSiX), and wherein the barrier layer comprises at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tantalum aluminum nitride (TaAlN) and titanium aluminum nitride (TiAlN).
11. A method according to claim 9 , wherein forming a first capacitor electrode comprises:
forming an etch stopper layer conforming to the metal etch stopper pattern, the barrier pattern, the ohmic pattern and the pad portion of the contact plug;
forming a mold layer on the etch stopper layer;
etching the mold layer to form an opening therein using the etch stopper layer as an etching stopper;
extending the opening through the etch stopper layer by etching the exposed portion of the etch stopper layer using the metal etch stopper pattern as an etching stopper;
forming a conductive layer on the mold layer and conforming to a sidewall of the opening through the mold layer and the etch stopper layer and the exposed portion of the metal etch stopper pattern; and
planarizing to form the first capacitor electrode.
12. A method according to claim 11 , wherein the conductive layer comprises at least one material from a group including titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni).
13. A method according to claim 11 , wherein the mold layer comprises at least one material from a group including of Hydrogen Silsesquioxane (HSQ), Boron Phosphorus Silicate Glass (BPSG), High density plasma (HDP) oxide, plasma enhanced tetraethyl orthosilicate (PETEOS), Undoped Silicate Glass (USG), Phosphorus Silicate Glass (PSG), plasma-enhanced (PE)-SiH4 and aluminum oxide (Al2O3), wherein the etch stopper layer comprises at least one material from a group including silicon nitride (Si3N4) and tantalum oxide (Ta2O5), and wherein the metal etch stopper layer comprises at least one material from a group including tungsten (W), aluminum (Al), copper (Cu), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), ruthenium (Ru), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), cobalt (Co) and nickel (Ni).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/273,505 US20060060907A1 (en) | 2003-06-26 | 2005-11-14 | Methods of forming integrated circuit devices with metal-insulator-metal capacitors |
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KR2003-42171 | 2003-06-26 | ||
KR10-2003-0042171A KR100508094B1 (en) | 2003-06-26 | 2003-06-26 | Semiconductor device with capacitor and method of forming the same |
US10/807,000 US6992346B2 (en) | 2003-06-26 | 2004-03-23 | Integrated circuit devices with metal-insulator-metal capacitors |
US11/273,505 US20060060907A1 (en) | 2003-06-26 | 2005-11-14 | Methods of forming integrated circuit devices with metal-insulator-metal capacitors |
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US10/807,000 Division US6992346B2 (en) | 2003-06-26 | 2004-03-23 | Integrated circuit devices with metal-insulator-metal capacitors |
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US20060060907A1 true US20060060907A1 (en) | 2006-03-23 |
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US10/807,000 Expired - Lifetime US6992346B2 (en) | 2003-06-26 | 2004-03-23 | Integrated circuit devices with metal-insulator-metal capacitors |
US11/273,505 Abandoned US20060060907A1 (en) | 2003-06-26 | 2005-11-14 | Methods of forming integrated circuit devices with metal-insulator-metal capacitors |
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Cited By (6)
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US20080012059A1 (en) * | 2006-07-11 | 2008-01-17 | Elpida Memory, Inc. | Semiconductor device and manufacturing method thereof |
US20100295149A1 (en) * | 2009-05-19 | 2010-11-25 | Texas Instruments Incorporated | Integrated circuit structure with capacitor and resistor and method for forming |
US20120193761A1 (en) * | 2011-01-31 | 2012-08-02 | Park Dongkyun | Highly Integrated Semiconductor Devices Including Capacitors |
US20140110824A1 (en) * | 2012-10-23 | 2014-04-24 | Samsung Electronics Co., Ltd. | Semiconductor devices having hybrid capacitors and methods for fabricating the same |
US9293336B2 (en) | 2013-04-24 | 2016-03-22 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US9484219B2 (en) | 2014-08-27 | 2016-11-01 | Samsung Electronic Co., Ltd. | Methods of fabricating memory devices using wet etching and dry etching |
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KR100487563B1 (en) * | 2003-04-30 | 2005-05-03 | 삼성전자주식회사 | Semiconductor device and method of forming the same |
US7169661B2 (en) * | 2004-04-12 | 2007-01-30 | System General Corp. | Process of fabricating high resistance CMOS resistor |
US20060151845A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | Method to control interfacial properties for capacitors using a metal flash layer |
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US7403147B2 (en) * | 2006-11-29 | 2008-07-22 | Sitime Corporation | Precision capacitor array |
US8349985B2 (en) * | 2009-07-28 | 2013-01-08 | Cheil Industries, Inc. | Boron-containing hydrogen silsesquioxane polymer, integrated circuit device formed using the same, and associated methods |
JP2012084738A (en) * | 2010-10-13 | 2012-04-26 | Elpida Memory Inc | Semiconductor device, method of manufacturing the same, and data processing system |
JP2015053337A (en) * | 2013-09-05 | 2015-03-19 | マイクロン テクノロジー, インク. | Semiconductor device and method of manufacturing the same |
CN117355134A (en) | 2017-01-27 | 2024-01-05 | 株式会社半导体能源研究所 | Capacitor, semiconductor device and method for manufacturing semiconductor device |
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US11929317B2 (en) | 2020-12-07 | 2024-03-12 | Macom Technology Solutions Holdings, Inc. | Capacitor networks for harmonic control in power devices |
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US6174810B1 (en) * | 1998-04-06 | 2001-01-16 | Motorola, Inc. | Copper interconnect structure and method of formation |
US6372598B2 (en) * | 1998-06-16 | 2002-04-16 | Samsung Electronics Co., Ltd. | Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US20080012059A1 (en) * | 2006-07-11 | 2008-01-17 | Elpida Memory, Inc. | Semiconductor device and manufacturing method thereof |
US20100295149A1 (en) * | 2009-05-19 | 2010-11-25 | Texas Instruments Incorporated | Integrated circuit structure with capacitor and resistor and method for forming |
US8907446B2 (en) * | 2009-05-19 | 2014-12-09 | Texas Instruments Incorporated | Integrated circuit structure with capacitor and resistor and method for forming |
US20120193761A1 (en) * | 2011-01-31 | 2012-08-02 | Park Dongkyun | Highly Integrated Semiconductor Devices Including Capacitors |
US8614498B2 (en) * | 2011-01-31 | 2013-12-24 | Samsung Electronics Co., Ltd. | Highly integrated semiconductor devices including capacitors |
US20140110824A1 (en) * | 2012-10-23 | 2014-04-24 | Samsung Electronics Co., Ltd. | Semiconductor devices having hybrid capacitors and methods for fabricating the same |
US9053971B2 (en) * | 2012-10-23 | 2015-06-09 | Samsung Electronics Co., Ltd. | Semiconductor devices having hybrid capacitors and methods for fabricating the same |
US9331140B2 (en) | 2012-10-23 | 2016-05-03 | Samsung Electronics Co., Ltd. | Semiconductor devices having hybrid capacitors and methods for fabricating the same |
US9293336B2 (en) | 2013-04-24 | 2016-03-22 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US9484219B2 (en) | 2014-08-27 | 2016-11-01 | Samsung Electronic Co., Ltd. | Methods of fabricating memory devices using wet etching and dry etching |
Also Published As
Publication number | Publication date |
---|---|
KR100508094B1 (en) | 2005-08-17 |
KR20050001832A (en) | 2005-01-07 |
US20040262661A1 (en) | 2004-12-30 |
US6992346B2 (en) | 2006-01-31 |
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