US20050260526A1 - Radiation sensitive resin composition, cathode separator and EL display device - Google Patents
Radiation sensitive resin composition, cathode separator and EL display device Download PDFInfo
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- US20050260526A1 US20050260526A1 US11/154,579 US15457905A US2005260526A1 US 20050260526 A1 US20050260526 A1 US 20050260526A1 US 15457905 A US15457905 A US 15457905A US 2005260526 A1 US2005260526 A1 US 2005260526A1
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- 230000005855 radiation Effects 0.000 title claims abstract description 38
- 239000011342 resin composition Substances 0.000 title abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000011347 resin Substances 0.000 claims abstract description 49
- 150000001875 compounds Chemical class 0.000 claims abstract description 45
- 239000003513 alkali Substances 0.000 claims abstract description 40
- 150000003839 salts Chemical class 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 19
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 125000003545 alkoxy group Chemical group 0.000 claims description 9
- 229940124543 ultraviolet light absorber Drugs 0.000 claims description 9
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 5
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Chemical class C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 235000001671 coumarin Nutrition 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 4
- 229910017048 AsF6 Inorganic materials 0.000 claims description 3
- DQFBYFPFKXHELB-UHFFFAOYSA-N Chalcone Chemical class C=1C=CC=CC=1C(=O)C=CC1=CC=CC=C1 DQFBYFPFKXHELB-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 3
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000004104 aryloxy group Chemical group 0.000 claims description 3
- 150000001789 chalcones Chemical class 0.000 claims description 3
- 235000005513 chalcones Nutrition 0.000 claims description 3
- 229930003944 flavone Chemical class 0.000 claims description 3
- 150000002213 flavones Chemical class 0.000 claims description 3
- 235000011949 flavones Nutrition 0.000 claims description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 3
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 125000004001 thioalkyl group Chemical group 0.000 claims description 3
- 125000005000 thioaryl group Chemical group 0.000 claims description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 3
- ZCILGMFPJBRCNO-UHFFFAOYSA-N 4-phenyl-2H-benzotriazol-5-ol Chemical class OC1=CC=C2NN=NC2=C1C1=CC=CC=C1 ZCILGMFPJBRCNO-UHFFFAOYSA-N 0.000 claims description 2
- 150000008360 acrylonitriles Chemical class 0.000 claims description 2
- 150000001565 benzotriazoles Chemical class 0.000 claims description 2
- WMKGGPCROCCUDY-PHEQNACWSA-N dibenzylideneacetone Chemical compound C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 WMKGGPCROCCUDY-PHEQNACWSA-N 0.000 claims description 2
- UJRDRFZCRQNLJM-UHFFFAOYSA-N methyl 3-[3-(benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propanoate Chemical compound CC(C)(C)C1=CC(CCC(=O)OC)=CC(N2N=C3C=CC=CC3=N2)=C1O UJRDRFZCRQNLJM-UHFFFAOYSA-N 0.000 claims description 2
- 150000003873 salicylate salts Chemical class 0.000 claims description 2
- 125000000332 coumarinyl group Chemical class O1C(=O)C(=CC2=CC=CC=C12)* 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 17
- -1 vinylhydroquinone Chemical class 0.000 description 43
- 239000000178 monomer Substances 0.000 description 39
- 150000003254 radicals Chemical class 0.000 description 35
- 239000000243 solution Substances 0.000 description 34
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 31
- 239000010408 film Substances 0.000 description 22
- 239000002904 solvent Substances 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 235000013824 polyphenols Nutrition 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 14
- 229920003986 novolac Polymers 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 12
- 229920001577 copolymer Polymers 0.000 description 11
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 11
- 238000011161 development Methods 0.000 description 10
- 150000002989 phenols Chemical class 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 9
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- 150000002148 esters Chemical group 0.000 description 7
- 229920001519 homopolymer Polymers 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical group 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000006068 polycondensation reaction Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 0 *C1=NC(C)=NC(C)=N1 Chemical compound *C1=NC(C)=NC(C)=N1 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical group OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229920003270 Cymel® Polymers 0.000 description 4
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 150000002170 ethers Chemical class 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000001188 haloalkyl group Chemical group 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000012429 reaction media Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 3
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 3
- KWKFXTDIZLUNAN-JROYGCORSA-N C.C.C.C.C.CC.CC.CC.CC.CC.CC.CC.CC.Cc1ccccc1.Cc1ccncc1.[2H]/C(C)=C(\C)c1ccccc1.[2H]/C(C)=C(\C)c1ccncc1.c1ccc2ccccc2c1.c1ccc2ncccc2c1 Chemical compound C.C.C.C.C.CC.CC.CC.CC.CC.CC.CC.CC.Cc1ccccc1.Cc1ccncc1.[2H]/C(C)=C(\C)c1ccccc1.[2H]/C(C)=C(\C)c1ccncc1.c1ccc2ccccc2c1.c1ccc2ncccc2c1 KWKFXTDIZLUNAN-JROYGCORSA-N 0.000 description 3
- URNJXVNCPBQNEU-UHFFFAOYSA-N CN(C)C1=NC(C2=CC=CC=C2)=NC(N(C)C)=N1 Chemical compound CN(C)C1=NC(C2=CC=CC=C2)=NC(N(C)C)=N1 URNJXVNCPBQNEU-UHFFFAOYSA-N 0.000 description 3
- UUVWYPNAQBNQJQ-UHFFFAOYSA-N CN(C)C1=NC(N(C)C)=NC(N(C)C)=N1 Chemical compound CN(C)C1=NC(N(C)C)=NC(N(C)C)=N1 UUVWYPNAQBNQJQ-UHFFFAOYSA-N 0.000 description 3
- WVAVNHQRAYFCAN-UHFFFAOYSA-N CN(C)C1=NC=NC(N(C)C)=N1 Chemical compound CN(C)C1=NC=NC(N(C)C)=N1 WVAVNHQRAYFCAN-UHFFFAOYSA-N 0.000 description 3
- XIUUSFJTJXFNGH-UHFFFAOYSA-N CN1C(=O)N(C)C2C1N(C)C(=O)N2C Chemical compound CN1C(=O)N(C)C2C1N(C)C(=O)N2C XIUUSFJTJXFNGH-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- VFLDPWHFBUODDF-FCXRPNKRSA-N curcumin Chemical compound C1=C(O)C(OC)=CC(\C=C\C(=O)CC(=O)\C=C\C=2C=C(OC)C(O)=CC=2)=C1 VFLDPWHFBUODDF-FCXRPNKRSA-N 0.000 description 3
- CISNNLXXANUBPI-UHFFFAOYSA-N cyano(nitro)azanide Chemical group [O-][N+](=O)[N-]C#N CISNNLXXANUBPI-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- VFLDPWHFBUODDF-UHFFFAOYSA-N diferuloylmethane Natural products C1=C(O)C(OC)=CC(C=CC(=O)CC(=O)C=CC=2C=C(OC)C(O)=CC=2)=C1 VFLDPWHFBUODDF-UHFFFAOYSA-N 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- DJFZWUYNTIZEKY-UHFFFAOYSA-M (4-methoxyphenyl)-diphenylsulfanium;2,2,2-trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F.C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 DJFZWUYNTIZEKY-UHFFFAOYSA-M 0.000 description 2
- WBUSZOLVSDXDOC-UHFFFAOYSA-M (4-methoxyphenyl)-diphenylsulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WBUSZOLVSDXDOC-UHFFFAOYSA-M 0.000 description 2
- XXCQVFAKDMZVLF-UHFFFAOYSA-M (4-methoxyphenyl)-phenyliodanium;2,2,2-trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F.C1=CC(OC)=CC=C1[I+]C1=CC=CC=C1 XXCQVFAKDMZVLF-UHFFFAOYSA-M 0.000 description 2
- YXSLFXLNXREQFW-UHFFFAOYSA-M (4-methoxyphenyl)-phenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(OC)=CC=C1[I+]C1=CC=CC=C1 YXSLFXLNXREQFW-UHFFFAOYSA-M 0.000 description 2
- KYLXYSWUYYPCHF-UHFFFAOYSA-N (diphenyl-lambda3-iodanyl) 2,2,2-trifluoroacetate Chemical compound C=1C=CC=CC=1I(OC(=O)C(F)(F)F)C1=CC=CC=C1 KYLXYSWUYYPCHF-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 description 2
- FNBHVKBYRFDOJK-UHFFFAOYSA-N 1-butoxypropan-2-yl propanoate Chemical compound CCCCOCC(C)OC(=O)CC FNBHVKBYRFDOJK-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- ODDDCGGSPAPBOS-UHFFFAOYSA-N 1-ethoxypropan-2-yl propanoate Chemical compound CCOCC(C)OC(=O)CC ODDDCGGSPAPBOS-UHFFFAOYSA-N 0.000 description 2
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 description 2
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 2
- RVNBCIQRFGXLRD-UHFFFAOYSA-N 1-propoxypropan-2-yl propanoate Chemical compound CCCOCC(C)OC(=O)CC RVNBCIQRFGXLRD-UHFFFAOYSA-N 0.000 description 2
- WYMUYYZQUXYMJI-UHFFFAOYSA-M 2,2,2-trifluoroacetate;triphenylsulfanium Chemical compound [O-]C(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WYMUYYZQUXYMJI-UHFFFAOYSA-M 0.000 description 2
- OGRAOKJKVGDSFR-UHFFFAOYSA-N 2,3,5-trimethylphenol Chemical compound CC1=CC(C)=C(C)C(O)=C1 OGRAOKJKVGDSFR-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- QNOLNVUUEJLNON-UHFFFAOYSA-N 2-(3-chlorophenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC1=CC=CC(C=2N=C(N=C(N=2)C(Cl)(Cl)Cl)C(Cl)(Cl)Cl)=C1 QNOLNVUUEJLNON-UHFFFAOYSA-N 0.000 description 2
- FVNIIPIYHHEXQA-UHFFFAOYSA-N 2-(4-methoxynaphthalen-1-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C12=CC=CC=C2C(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 FVNIIPIYHHEXQA-UHFFFAOYSA-N 0.000 description 2
- QRHHZFRCJDAUNA-UHFFFAOYSA-N 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 QRHHZFRCJDAUNA-UHFFFAOYSA-N 0.000 description 2
- OZIUQIJHFBCZBX-UHFFFAOYSA-N 2-(4-methylsulfanylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(SC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 OZIUQIJHFBCZBX-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- RVGLEPQPVDUSOJ-UHFFFAOYSA-N 2-Methyl-3-hydroxypropanoate Chemical compound COC(=O)CCO RVGLEPQPVDUSOJ-UHFFFAOYSA-N 0.000 description 2
- FXRQXYSJYZPGJZ-UHFFFAOYSA-N 2-[(2-methylpropan-2-yl)oxy]ethenylbenzene Chemical compound CC(C)(C)OC=CC1=CC=CC=C1 FXRQXYSJYZPGJZ-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- QQOMQLYQAXGHSU-UHFFFAOYSA-N 236TMPh Natural products CC1=CC=C(C)C(O)=C1C QQOMQLYQAXGHSU-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- YNGIFMKMDRDNBQ-UHFFFAOYSA-N 3-ethenylphenol Chemical group OC1=CC=CC(C=C)=C1 YNGIFMKMDRDNBQ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical group OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- XYVQFUJDGOBPQI-UHFFFAOYSA-N Methyl-2-hydoxyisobutyric acid Chemical compound COC(=O)C(C)(C)O XYVQFUJDGOBPQI-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 2
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 2
- VFGRALUHHHDIQI-UHFFFAOYSA-N butyl 2-hydroxyacetate Chemical compound CCCCOC(=O)CO VFGRALUHHHDIQI-UHFFFAOYSA-N 0.000 description 2
- BMOACRKLCOIODC-UHFFFAOYSA-N butyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OCCCC BMOACRKLCOIODC-UHFFFAOYSA-N 0.000 description 2
- 229940043232 butyl acetate Drugs 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 150000004775 coumarins Chemical class 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 2
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 2
- GIRSHSVIZQASRJ-UHFFFAOYSA-N ethyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OCC GIRSHSVIZQASRJ-UHFFFAOYSA-N 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
- UKDLORMZNPQILV-UHFFFAOYSA-N ethyl 3-hydroxypropanoate Chemical compound CCOC(=O)CCO UKDLORMZNPQILV-UHFFFAOYSA-N 0.000 description 2
- 229940093499 ethyl acetate Drugs 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- GSJFXBNYJCXDGI-UHFFFAOYSA-N methyl 2-hydroxyacetate Chemical compound COC(=O)CO GSJFXBNYJCXDGI-UHFFFAOYSA-N 0.000 description 2
- VBCSBEIIIFLVQV-UHFFFAOYSA-N methyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OC VBCSBEIIIFLVQV-UHFFFAOYSA-N 0.000 description 2
- 229940057867 methyl lactate Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 2
- HJIYVZIALQOKQI-UHFFFAOYSA-N propyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OCCC HJIYVZIALQOKQI-UHFFFAOYSA-N 0.000 description 2
- KNCDNPMGXGIVOM-UHFFFAOYSA-N propyl 3-hydroxypropanoate Chemical compound CCCOC(=O)CCO KNCDNPMGXGIVOM-UHFFFAOYSA-N 0.000 description 2
- 229940090181 propyl acetate Drugs 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 239000007870 radical polymerization initiator Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000001834 xanthenyl group Chemical class C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- CVBASHMCALKFME-UHFFFAOYSA-N (4-methoxyphenyl)-diphenylsulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CVBASHMCALKFME-UHFFFAOYSA-N 0.000 description 1
- GDYCLAOHWKCIHQ-UHFFFAOYSA-M (4-methoxyphenyl)-diphenylsulfanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 GDYCLAOHWKCIHQ-UHFFFAOYSA-M 0.000 description 1
- JZDQKBZKFIWSNW-UHFFFAOYSA-N (4-methoxyphenyl)-phenyliodanium Chemical compound C1=CC(OC)=CC=C1[I+]C1=CC=CC=C1 JZDQKBZKFIWSNW-UHFFFAOYSA-N 0.000 description 1
- WMHLKXSYGGEXNQ-UHFFFAOYSA-M (4-methoxyphenyl)-phenyliodanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC(OC)=CC=C1[I+]C1=CC=CC=C1 WMHLKXSYGGEXNQ-UHFFFAOYSA-M 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- BLLFPKZTBLMEFG-UHFFFAOYSA-N 1-(4-hydroxyphenyl)pyrrole-2,5-dione Chemical compound C1=CC(O)=CC=C1N1C(=O)C=CC1=O BLLFPKZTBLMEFG-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- VUBUXALTYMBEQO-UHFFFAOYSA-N 2,2,3,3,3-pentafluoro-1-phenylpropan-1-one Chemical compound FC(F)(F)C(F)(F)C(=O)C1=CC=CC=C1 VUBUXALTYMBEQO-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- DXUMYHZTYVPBEZ-UHFFFAOYSA-N 2,4,6-tris(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 DXUMYHZTYVPBEZ-UHFFFAOYSA-N 0.000 description 1
- YFKISBDZEGWBML-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC1=CC=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 YFKISBDZEGWBML-UHFFFAOYSA-N 0.000 description 1
- VRBKTPNSKOSBLV-UHFFFAOYSA-N 2-(2-methoxynaphthalen-1-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound COC1=CC=C2C=CC=CC2=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 VRBKTPNSKOSBLV-UHFFFAOYSA-N 0.000 description 1
- LRPXBHSHSWJFGR-UHFFFAOYSA-N 2-(2-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound COC1=CC=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 LRPXBHSHSWJFGR-UHFFFAOYSA-N 0.000 description 1
- WMOFXPSPFDNZNM-UHFFFAOYSA-N 2-(2-methylprop-2-enoyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(C(=O)C(=C)C)C(=O)C2=C1 WMOFXPSPFDNZNM-UHFFFAOYSA-N 0.000 description 1
- MKPDVIWRVDRMAO-UHFFFAOYSA-N 2-(2-methylsulfanylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound CSC1=CC=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 MKPDVIWRVDRMAO-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- HYHJFRMQSDHBPY-UHFFFAOYSA-N 2-(3-methoxynaphthalen-1-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C=12C=CC=CC2=CC(OC)=CC=1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 HYHJFRMQSDHBPY-UHFFFAOYSA-N 0.000 description 1
- YEAPAVOPQLGVQU-UHFFFAOYSA-N 2-(3-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound COC1=CC=CC(C=2N=C(N=C(N=2)C(Cl)(Cl)Cl)C(Cl)(Cl)Cl)=C1 YEAPAVOPQLGVQU-UHFFFAOYSA-N 0.000 description 1
- NMXMUBGAUMWPIC-UHFFFAOYSA-N 2-(3-methylsulfanylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound CSC1=CC=CC(C=2N=C(N=C(N=2)C(Cl)(Cl)Cl)C(Cl)(Cl)Cl)=C1 NMXMUBGAUMWPIC-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- WJKHYAJKIXYSHS-UHFFFAOYSA-N 2-(4-chlorophenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(Cl)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 WJKHYAJKIXYSHS-UHFFFAOYSA-N 0.000 description 1
- ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 2-dodecanoyloxyethyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCC ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 0.000 description 1
- GWYFZTJDIQALEB-UHFFFAOYSA-N 2-ethenylbenzene-1,4-diol Chemical compound OC1=CC=C(O)C(C=C)=C1 GWYFZTJDIQALEB-UHFFFAOYSA-N 0.000 description 1
- XUDBVJCTLZTSDC-UHFFFAOYSA-N 2-ethenylbenzoic acid Chemical group OC(=O)C1=CC=CC=C1C=C XUDBVJCTLZTSDC-UHFFFAOYSA-N 0.000 description 1
- ICPWFHKNYYRBSZ-UHFFFAOYSA-M 2-methoxypropanoate Chemical compound COC(C)C([O-])=O ICPWFHKNYYRBSZ-UHFFFAOYSA-M 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- HAZQZUFYRLFOLC-UHFFFAOYSA-N 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=CC=CC=2)=N1 HAZQZUFYRLFOLC-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- NHECGRVSXQNMTF-UHFFFAOYSA-N 2-prop-2-enoylisoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(C(=O)C=C)C(=O)C2=C1 NHECGRVSXQNMTF-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- VWXZFDWVWMQRQR-UHFFFAOYSA-N 3-ethenylbenzoic acid Chemical group OC(=O)C1=CC=CC(C=C)=C1 VWXZFDWVWMQRQR-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- YCIGYTFKOXGYTA-UHFFFAOYSA-N 4-(3-cyanopropyldiazenyl)butanenitrile Chemical compound N#CCCCN=NCCCC#N YCIGYTFKOXGYTA-UHFFFAOYSA-N 0.000 description 1
- UNDXPKDBFOOQFC-UHFFFAOYSA-N 4-[2-nitro-4-(trifluoromethyl)phenyl]morpholine Chemical compound [O-][N+](=O)C1=CC(C(F)(F)F)=CC=C1N1CCOCC1 UNDXPKDBFOOQFC-UHFFFAOYSA-N 0.000 description 1
- GIWLNNJJLSQMPL-UHFFFAOYSA-N 4-[diphenyl-(4-phenylthiophen-2-yl)methyl]benzenesulfonic acid Chemical compound C1=CC(S(=O)(=O)O)=CC=C1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC(C=2C=CC=CC=2)=CS1 GIWLNNJJLSQMPL-UHFFFAOYSA-N 0.000 description 1
- ACQVEWFMUBXEMR-UHFFFAOYSA-N 4-bromo-2-fluoro-6-nitrophenol Chemical compound OC1=C(F)C=C(Br)C=C1[N+]([O-])=O ACQVEWFMUBXEMR-UHFFFAOYSA-N 0.000 description 1
- IRQWEODKXLDORP-UHFFFAOYSA-N 4-ethenylbenzoic acid Chemical group OC(=O)C1=CC=C(C=C)C=C1 IRQWEODKXLDORP-UHFFFAOYSA-N 0.000 description 1
- YXZXRYDYTRYFAF-UHFFFAOYSA-M 4-methylbenzenesulfonate;triphenylsulfanium Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 YXZXRYDYTRYFAF-UHFFFAOYSA-M 0.000 description 1
- XBCXTFGGCBORFJ-UHFFFAOYSA-N 5-ethenylcyclohexa-1,3-diene-1,3,5-triol Chemical group OC1=CC(O)=CC(O)(C=C)C1 XBCXTFGGCBORFJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- UYMPAYPCWUTOOR-UHFFFAOYSA-N C(CCC)ONC1(N(C(N(C(=N1)N)OCCCC)(N(CO)OCCCC)OCCCC)OCCCC)OCCCC Chemical compound C(CCC)ONC1(N(C(N(C(=N1)N)OCCCC)(N(CO)OCCCC)OCCCC)OCCCC)OCCCC UYMPAYPCWUTOOR-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- 229910003023 Mg-Al Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- BJSBGAIKEORPFG-UHFFFAOYSA-N [[6-amino-1,2,3,4-tetramethoxy-4-(methoxyamino)-1,3,5-triazin-2-yl]-methoxyamino]methanol Chemical compound CONC1(N(C(N(C(=N1)N)OC)(N(CO)OC)OC)OC)OC BJSBGAIKEORPFG-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- 150000001251 acridines Chemical class 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000003931 anilides Chemical class 0.000 description 1
- YUENFNPLGJCNRB-UHFFFAOYSA-N anthracen-1-amine Chemical compound C1=CC=C2C=C3C(N)=CC=CC3=CC2=C1 YUENFNPLGJCNRB-UHFFFAOYSA-N 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- URBZEXMYYYABCQ-UHFFFAOYSA-N butyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCCC URBZEXMYYYABCQ-UHFFFAOYSA-N 0.000 description 1
- IKRARXXOLDCMCX-UHFFFAOYSA-N butyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCCC IKRARXXOLDCMCX-UHFFFAOYSA-N 0.000 description 1
- VUEYQLJAKGLDNR-UHFFFAOYSA-N butyl 2-ethoxyacetate Chemical compound CCCCOC(=O)COCC VUEYQLJAKGLDNR-UHFFFAOYSA-N 0.000 description 1
- FYRUCHOYGVFKLZ-UHFFFAOYSA-N butyl 2-ethoxypropanoate Chemical compound CCCCOC(=O)C(C)OCC FYRUCHOYGVFKLZ-UHFFFAOYSA-N 0.000 description 1
- IWPATTDMSUYMJV-UHFFFAOYSA-N butyl 2-methoxyacetate Chemical compound CCCCOC(=O)COC IWPATTDMSUYMJV-UHFFFAOYSA-N 0.000 description 1
- JDJWQETUMXXWPD-UHFFFAOYSA-N butyl 2-methoxypropanoate Chemical compound CCCCOC(=O)C(C)OC JDJWQETUMXXWPD-UHFFFAOYSA-N 0.000 description 1
- WVBJXEYRMVIDFD-UHFFFAOYSA-N butyl 2-propoxyacetate Chemical compound CCCCOC(=O)COCCC WVBJXEYRMVIDFD-UHFFFAOYSA-N 0.000 description 1
- MVWVAXBILFBQIZ-UHFFFAOYSA-N butyl 3-ethoxypropanoate Chemical compound CCCCOC(=O)CCOCC MVWVAXBILFBQIZ-UHFFFAOYSA-N 0.000 description 1
- MENWVOUYOZQBDM-UHFFFAOYSA-N butyl 3-hydroxypropanoate Chemical compound CCCCOC(=O)CCO MENWVOUYOZQBDM-UHFFFAOYSA-N 0.000 description 1
- RRIRSNXZGJWTQM-UHFFFAOYSA-N butyl 3-methoxypropanoate Chemical compound CCCCOC(=O)CCOC RRIRSNXZGJWTQM-UHFFFAOYSA-N 0.000 description 1
- NPCIWFUNUUCNOM-UHFFFAOYSA-N butyl 3-propoxypropanoate Chemical compound CCCCOC(=O)CCOCCC NPCIWFUNUUCNOM-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 125000000853 cresyl group Chemical group C1(=CC=C(C=C1)C)* 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- KAAQPMPUQHKLLE-UHFFFAOYSA-N cyclohexene-1,4-dicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)=CC1 KAAQPMPUQHKLLE-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- SVBSJWKYFYUHTF-UHFFFAOYSA-N ethyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCC SVBSJWKYFYUHTF-UHFFFAOYSA-N 0.000 description 1
- HMONIZCCNGYDDJ-UHFFFAOYSA-N ethyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCC HMONIZCCNGYDDJ-UHFFFAOYSA-N 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- JLEKJZUYWFJPMB-UHFFFAOYSA-N ethyl 2-methoxyacetate Chemical compound CCOC(=O)COC JLEKJZUYWFJPMB-UHFFFAOYSA-N 0.000 description 1
- WHRLOJCOIKOQGL-UHFFFAOYSA-N ethyl 2-methoxypropanoate Chemical compound CCOC(=O)C(C)OC WHRLOJCOIKOQGL-UHFFFAOYSA-N 0.000 description 1
- ZXONMBCEAFIRDT-UHFFFAOYSA-N ethyl 2-propoxyacetate Chemical compound CCCOCC(=O)OCC ZXONMBCEAFIRDT-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- LLACVNYOVGHAKH-UHFFFAOYSA-N ethyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OCC LLACVNYOVGHAKH-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 125000004401 m-toluyl group Chemical group [H]C1=C([H])C(=C([H])C(=C1[H])C([H])([H])[H])C(*)=O 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- BKFQHFFZHGUTEZ-UHFFFAOYSA-N methyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OC BKFQHFFZHGUTEZ-UHFFFAOYSA-N 0.000 description 1
- QBVBLLGAMALJGB-UHFFFAOYSA-N methyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OC QBVBLLGAMALJGB-UHFFFAOYSA-N 0.000 description 1
- PPFNAOBWGRMDLL-UHFFFAOYSA-N methyl 2-ethoxyacetate Chemical compound CCOCC(=O)OC PPFNAOBWGRMDLL-UHFFFAOYSA-N 0.000 description 1
- YVWPDYFVVMNWDT-UHFFFAOYSA-N methyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OC YVWPDYFVVMNWDT-UHFFFAOYSA-N 0.000 description 1
- YSGBMDFJWFIEDF-UHFFFAOYSA-N methyl 2-hydroxy-3-methylbutanoate Chemical compound COC(=O)C(O)C(C)C YSGBMDFJWFIEDF-UHFFFAOYSA-N 0.000 description 1
- AVVSSORVCLNBOS-UHFFFAOYSA-N methyl 2-propoxyacetate Chemical compound CCCOCC(=O)OC AVVSSORVCLNBOS-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- DMHHINXESLPPMV-UHFFFAOYSA-N methyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OC DMHHINXESLPPMV-UHFFFAOYSA-N 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- JIKUXBYRTXDNIY-UHFFFAOYSA-N n-methyl-n-phenylformamide Chemical compound O=CN(C)C1=CC=CC=C1 JIKUXBYRTXDNIY-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000005441 o-toluyl group Chemical group [H]C1=C([H])C(C(*)=O)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000005440 p-toluyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C(*)=O)C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005004 perfluoroethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 125000004591 piperonyl group Chemical group C(C1=CC=2OCOC2C=C1)* 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- LVDAGIFABMFXSJ-UHFFFAOYSA-N propyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCC LVDAGIFABMFXSJ-UHFFFAOYSA-N 0.000 description 1
- GYOCIFXDRJJHPF-UHFFFAOYSA-N propyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCC GYOCIFXDRJJHPF-UHFFFAOYSA-N 0.000 description 1
- ADOFEJQZDCWAIL-UHFFFAOYSA-N propyl 2-ethoxyacetate Chemical compound CCCOC(=O)COCC ADOFEJQZDCWAIL-UHFFFAOYSA-N 0.000 description 1
- GXKPKHWZTLSCIB-UHFFFAOYSA-N propyl 2-ethoxypropanoate Chemical compound CCCOC(=O)C(C)OCC GXKPKHWZTLSCIB-UHFFFAOYSA-N 0.000 description 1
- FIABMSNMLZUWQH-UHFFFAOYSA-N propyl 2-methoxyacetate Chemical compound CCCOC(=O)COC FIABMSNMLZUWQH-UHFFFAOYSA-N 0.000 description 1
- CYIRLFJPTCUCJB-UHFFFAOYSA-N propyl 2-methoxypropanoate Chemical compound CCCOC(=O)C(C)OC CYIRLFJPTCUCJB-UHFFFAOYSA-N 0.000 description 1
- BMVTVMIDGMNRRR-UHFFFAOYSA-N propyl 2-propoxyacetate Chemical compound CCCOCC(=O)OCCC BMVTVMIDGMNRRR-UHFFFAOYSA-N 0.000 description 1
- IYVPXMGWHZBPIR-UHFFFAOYSA-N propyl 3-ethoxypropanoate Chemical compound CCCOC(=O)CCOCC IYVPXMGWHZBPIR-UHFFFAOYSA-N 0.000 description 1
- JCMFJIHDWDKYIL-UHFFFAOYSA-N propyl 3-methoxypropanoate Chemical compound CCCOC(=O)CCOC JCMFJIHDWDKYIL-UHFFFAOYSA-N 0.000 description 1
- YTUFRRBSSNRYID-UHFFFAOYSA-N propyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OCCC YTUFRRBSSNRYID-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000012966 redox initiator Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- JZWFDVDETGFGFC-UHFFFAOYSA-N salacetamide Chemical group CC(=O)NC(=O)C1=CC=CC=C1O JZWFDVDETGFGFC-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 150000005075 thioxanthenes Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 125000002221 trityl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C([*])(C1=C(C(=C(C(=C1[H])[H])[H])[H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Definitions
- the present invention relates to a radiation sensitive resin composition for the formation of cathode separators for EL display devices, a cathode separator and an EL display device. More specifically, it relates to a radiation sensitive resin composition suitable for use as a material for the formation of cathode separators for EL display devices, a cathode separator formed therefrom and an EL display device.
- a fine pattern cannot be formed by the inclusion of a deposited product caused by poor adhesion between the mask and a substrate during vapor deposition, a short circuit between a cathode and an anode made of indium tin oxide (to be abbreviated as ITO hereinafter) caused by the damage of an organic EL layer by contact with the mask when the substrate and the deposition mask are closely adhered to each other forcedly, and the deflection of the mask due to insufficient strength in the case of a striped cathode pattern with small masking portions and large openings.
- ITO indium tin oxide
- JP-A 2-66873 the term “JP-A” as used herein means an “unexamined published Japanese patent application” is to pattern a photoresist comprising a solvent which does not dissolve an organic EL material on the organic EL device and etch a cathode using diluted sulfuric acid.
- the organic EL material is damaged by the diluted sulfuric acid at the time of etching.
- JP-A 5-275172, JP-A 5-258859 and JP-A 5-258860 is to form cathode separators having a tapered cross section with a height of several to several tens of micrometers and arranged parallel to one another on a substrate after ITO patterning and to deposit an organic EL material and a cathode material from a direction perpendicular to the cathode separators and a direction diagonal to the surface of the substrate on the substrate for patterning.
- a method of forming a first electrode line and an organic EL material thin film by vacuum deposition in an oblique direction selectively by shutting out a predetermined gas stream with high cathode separators formed at the boundary on the substrate in order to prevent a space between cathode separators from being polluted during deposition.
- a portion where the organic EL material is not deposited is existent in an opening between cathode separators and the brightness of a display device becomes unsatisfactory.
- JP-A 8-315981 uses cathode separator having a overhung cross section (trapezoidal with a bottom side shorter than a top side) to enable vacuum deposition from above and eliminate the above defect of oblique deposition.
- overhung cross section trapezoidal with a bottom side shorter than a top side
- a volatile component derived from the cathode separator material When a volatile component derived from the cathode separator material is contained in an EL layer as an impurity, it may cause such a problem as a reduction in the light emitting area of an EL light emitting device or a lighting failure.
- a radiation sensitive resin composition which comprises:
- a cathode separator for EL display devices which is formed from the above radiation sensitive resin composition.
- an EL display device comprising the above cathode separators.
- the El display device of the present invention comprehends an organic EL display device and an inorganic EL display device. Out of these, the organic EL display device is preferred.
- the alkali soluble resin used in the present invention is not particularly limited if it is alkali-soluble.
- a novolak resin, a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and a copolymer of the radical polymerizable monomer and another radical polymerizable monomer are preferred as the alkali soluble resin.
- the novolak resin is alkali-soluble and is obtained by polycondensing a phenol, preferably a phenol containing m-cresol, and an aldehyde.
- a phenol preferably a phenol containing m-cresol, and an aldehyde.
- phenol other than m-cresol to be simply referred to as “phenolic monomer” hereinafter
- phenol monomer used in the production of the novolak resin are advantageously used phenol, p-cresol, o-cresol, 2,3-xylenol, 2,5-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, catechol, resorcinol, hydroquinone, methylhydroquinone, pyrogallol and phloroglucinol.
- These phenolic monomers may be used alone or in combination of two or more, preferably in combination with m-cresol.
- the molar ratio of m-cresol to the phenolic monomer is preferably 20/80 to 100/0, more preferably 30/70 to 100/0.
- the amount of m-cresol is smaller than 20 mol %, the resolution of the obtained composition tends to deteriorate.
- the phenol is polycondensed with an aldehyde such as formaldehyde or acetaldehyde in the presence of an acid catalyst such as oxalic acid to obtain a novolak resin of interest.
- an aldehyde such as formaldehyde or acetaldehyde
- an acid catalyst such as oxalic acid
- Water is generally used as a reaction medium in the polycondensation reaction.
- a hydrophilic organic solvent may be used as the reaction medium.
- the solvent used in this case include alcohols such as methanol, ethanol and butanol, and cyclic ethers such as tetrahydrofuran and dioxane.
- the amount of the reaction medium is preferably 20 to 400 parts by weight based on 100 parts by weight of the total of the reaction raw materials.
- the polycondensation reaction temperature can be suitably adjusted according to the reactivity of the reaction raw materials but it is preferably 10 to 200° C.
- the novolak resin can be recovered by elevating the temperature to 130 to 230° C. to remove an unreacted raw material, acid catalyst and reaction medium existent in the system and distilling off a volatile component under reduced pressure.
- the novolak resin used in the present invention has a weight average molecular weight in terms of standard polystyrene (to be referred to as “Mw” hereinafter) of preferably 2,000 to 30,000, particularly preferably 3,500 to 20,000.
- Mw weight average molecular weight in terms of standard polystyrene
- the above novolak resins may be used alone or in combination of two or more.
- Preferred examples of the radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group used to synthesize a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and a copolymer of the radical polymerizable monomer and another radical polymerizable monomer include o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene and alkyl, alkoxy, halogen, haloalkyl, nitro, cyano, amide, ester and carboxy substituted products thereof; polyhydroxyvinyl phenols such as vinylhydroquinone, 5-vinylpyrogallol, 6-vinylpyrogallol and 1-vinylphloroglucinol; o-vinylbenzoic acid, m-vinylbenzoic acid, p-vinylbenzoic acid, and alkyl, alkoxy, halogen,
- o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, and alkyl and alkoxy substituted products thereof are preferred from the viewpoints of sensitivity at the time of patterning, resolution, film retention after development, thermal deformation resistance, solvent resistance, adhesion to the base and solution keeping stability.
- Examples of the another radical polymerizable monomer include styrene, ⁇ -position, o-position, m-position and p-position alkyl, alkoxy, halogen, haloalkyl, nitro, cyano, amide and ester substituted products of styrene; diolefins such as butadiene, isoprene and chloroprene; methyl, ethyl, n-propyl, i-propyl, n-butyl, sec-butyl, ter-butyl, pentyl, neopentyl, isoamylhexyl, cyclohexyl, adamantyl, allyl, propargyl, phenyl, naphthyl, anthracenyl, anthraquinonyl, piperonyl, salicyl, cyclohexyl, benzyl, phenethyl, cres
- styrene, and ⁇ -position, o-position, m-position and p-position alkyl, alkoxy, halogen and haloalkyl substituted products of styrene; butadiene and isoprene; and methyl, ethyl, n-propyl, N-butyl, glycidyl and dicyclopentanyl esterified products of methacrylic acid and acrylic acid are particularly preferred from the viewpoints of sensitivity at the time of patterning, resolution, film retention after development, thermal deformation resistance, solvent resistance, adhesion to the base and solution keeping stability.
- the amount of the another radical polymerizable monomer is preferably 30 wt % or less, particularly preferably 5 to 20 wt % based on the total weight of the radical polymerizable monomer having a phenolic hydroxyl group and the another radical polymerizable monomer.
- the amount of the another radical polymerizable monomer is preferably 90 wt % or less, particularly preferably 10 to 80 wt % based on the total weight of the radical polymerizable monomer having a carboxyl group and the another radical polymerizable monomer.
- radical polymerization initiators may be used as the polymerization initiator used in the production of a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group or a copolymer of the radical polymerizable monomer and another radical polymerizable monomer, as exemplified by azo compounds such as 2,2′-azobisisobutyronitrile, 2,2′-azobis-(2,4-dimethylvaleronitrile) and 2,2′-azobis-(4-methoxy-2,4-dimethylvaleronitrile; organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butyl peroxypivalate and 1,1′-bis-(t-butylperoxy)cyclohexane; and hydrogen peroxide.
- the peroxide may be used in conjunction with a reducer as a redox initi
- Examples of the solvent used in the production of a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group or a copolymer of the radical polymerizable monomer and another radical polymerizable monomer include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycols such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether and diethylene glycol ethylmethyl ether; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether
- the amount of the solvent is preferably 20 to 1,000 parts by weight based on 100 parts by weight of the total of the reaction raw materials.
- the weight average molecular weight in terms of polystyrene of a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group or a copolymer of the radical polymerizable monomer and another radical polymerizable monomer is preferably 2,000 to 100,000, more preferably 3,000 to 50,000, particularly preferably 5,000 to 30,000.
- the pattern shape, resolution, developability and heat resistance are apt to deteriorate and when the average molecular weight is larger than 100,000, developability, particularly sensitivity often tends to degrade.
- the above homopolymers of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and the above copolymers of the radical polymerizable monomer and another radical polymerizable monomer may be used alone or in combination of two or more.
- a protective group may be introduced into the carboxyl group or phenolic hydroxyl group and removed after polymerization to provide alkali solubility so as to synthesize an alkali soluble resin. Further, visible light transmission and softening point may be changed by hydrogenation.
- a novolak resin a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and a copolymer of the radical polymerizable monomer and another radical polymerizable monomer are preferably used as the alkali soluble resin (A) used in the present invention.
- Part of the alkali soluble resin (A) may be substituted with another phenolic compound.
- the another phenolic compound used in the present invention is a phenolic compound having a molecular weight of 1,000 or less. When the molecular weight of the phenolic compound is larger than 1,000,resolution degrades.
- Examples of the low-molecular weight phenolic compound include compounds having the following structures. In the above formulas, R 2 's may be the same or different and each a hydrogen atom or methyl group, and a, b, c, d, k, l, m and n are each an integer of 0 to 3, with the proviso that a+b+c+d ⁇ 2.
- the amount of the another phenolic compound is preferably 80 wt % or less, more preferably 50 wt % or less based on the total weight of the alkali soluble resin (A) and the another phenolic compound.
- the amount of the another phenolic compound is larger than 80 wt %, a coating film may not be formed.
- Examples of the compounds represented by the above formulae (I) to (IV) include hexamethoxymethylolmelamine, hexabutoxymethylolmelamine, tetramethoxymethylolbenzoquanamine, tetramethoxymethylolguanamine, tetramethoxymethylolglycoluril. These compounds may be used alone or in admixture. And these compounds may be used as pure compound or as a mixture with an oligomer of such compound having a weight average molecular weight of 1,500 or less.
- Cymel 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65 and 300 (of Mitsui Cyanamid Co., Ltd.), Nikalack Mx-750, -032, -706, -708, -40 and -31, Nikalack Ms-11, and Nikalack Mw-30 (of Sanwa Chemical Co., Ltd.) are preferred.
- the amount of the compound is preferably 1 to 100 parts by weight, more preferably 5 to 50 parts by weight based on 100 parts by weight of the alkali soluble resin (A). When the amount is smaller than 1 part by weight, film retention after development may lower and heat resistance and solvent resistance may deteriorate.
- Examples of the onium salt represented by the above formula (VI) include diaryl iodonium salts such as diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, diphenyliodonium trifluoromethane sulfonate, diphenyliodonium trifluoroacetate, diphenylindonium-p-toluene sulfonate,
- diaryl iodonium salts such as diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, diphenyliodonium trifluoromethane sulfonate, diphenyliodonium trifluoroacetate, diphenylindonium-p-tolu
- the amount of the compound represented by the above formula (V) or (VI) is preferably 0.001 to 10 parts by weight, more preferably 0.01 to 5 parts by weight based on 100 parts by weight of the alkali soluble resin (A).
- the amount is smaller than 0.001 part by weight, the heat resistance and solvent resistance of the cathode separators may lower.
- the amount is larger than 10 parts by weight, the control of the pattern shape after development may become difficult.
- the compound represented by the formula (V) or (VI) may be used in conjunction with a suitable sensitizer.
- the sensitizer include coumarins having a substituent at least one position of the 3-position and 7-position, flavones, dibenzalacetones, dibenzalcyclohexanes, chalcones, xanthenes, thioxanthenes and porphylins and acridines.
- the amount of the ultraviolet light absorbing compound is preferably 20 parts or less by weight, more preferably 10 parts or less by weight based on 100 parts by weight of the alkali soluble resin (A). When the amount is larger than 20 parts by weight, the sensitizer tends to provide a filter effect, thereby making it difficult for radiation to reach the substrate.
- compositions of the present invention may be contained in the composition of the present invention as required in limits not prejudicial to the object of the present invention.
- the other components include an ultraviolet light absorber, compound containing two or more epoxy groups in the molecule, surfactant, adhesion aid, keeping stabilizer and anti-foaming agent.
- the above ultraviolet light absorber may be added mainly to obtain a good inversely tapered shape.
- the ultraviolet light absorbing compound used in the present invention absorbs light having a wavelength of less than 400 nm, particularly 365 nm, rarely absorbs visible light and is soluble in solvents to be described hereinafter.
- Examples of the ultraviolet light absorber include benzotriazoles, salicylates, benzophenones, substituted acrylonitriles, xanthenes, coumarins, flavones and chalcones.
- Tinubin 234 (2-(2-hydroxy-3,5-bis( ⁇ , ⁇ -dimethylbenzyl)phenyl)-2H-benzotriazole), Tinubin 571 (hydroxyphenylbenzotriazole derivative), Tinubin 1130 (condensate between methyl-3-(3-t-butyl-5-(2H-benzotriazol-2-yl)-4-hydroxyphenyl)propionate and polyethylene glycol (molecular weight of 300)) (of Chiba Specialty Chemicals Co., Ltd.), 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadiene-3,5-dione and dibenzylideneacetone are commercially available.
- the amount of the ultraviolet light absorber is preferably 20 parts or less by weight, more preferably 10 parts or less by weight based on 100 parts by weight of the alkali soluble resin (A).
- the ultraviolet light absorber is added in an amount of more than 20 parts by weight, sensitivity is liable to lower.
- the compound containing two or more epoxy groups in the molecule may be blended mainly to improve heat resistance and adhesion.
- Examples of the compound containing two or more epoxy groups in the molecule include bisphenol A epoxy resins such as Epicoat 1001, 1002, 1003, 1004, 1007, 1009, 1010 and 828 (of Yuka Shell Epoxy Co., Ltd.); bisphenol F epoxy resins such as Epicoat 807 (of Yuka Shell Epoxy Co., Ltd.); phenol novolak epoxy resins such as Epicoat 152 and 154 (of Yuka Shell Epoxy Co., Ltd.) and EPPN201 and 202 (of Nippon Kayaku Co., Ltd.); cresol novolak type epoxy resins such as EOCN-102, 103S, 104S, 1020, 1025 and 1027 (of Nippon Kayaku Co., Ltd.) and Epicoat 180S75 (of Yuka Shell Epoxy Co., Ltd.); cyclic aliphatic epoxy resins such as CY-175, 177 and 179 (of CIBA-
- a compound such as a glycidyl ether of bisphenol A or bisphenol F may also be suitably used.
- the amount of the compound containing two or more epoxy groups in the molecule is preferably 1 to 100 parts by weight, more preferably 5 to 50 parts by weight based on 100 parts by weight of the alkali soluble resin (A).
- the alkali soluble resin (A) When a copolymer having a structural unit derived from a monomer containing an epoxy group such as glycidyl (meth)acrylate is used as the alkali soluble resin (A), it can be said that the component (A) is a “compound containing two or more epoxy groups in the molecule” but differs from the compound in that it is required to have alkali solubility and to be a relatively high molecular weight polymer.
- the above surfactant may be blended to improve striation and the developability of a radiation exposed portion after the formation of a dried coating film.
- the surfactant include nonionic surfactants such as polyoxyethylene alkyl ethers including polyoxyethylene lauryl ether, polyoxyethylene stearyl ether and polyxoyethylene oleyl ether, polyoxyethylene aryl ethers including polyoxyethylene octylphenyl ether and polyoxyethylene nonylphenyl ether, and polyethylene glycol dialkyl esters including polyethylene glycol dilaurate and polyethylene glycol distearate; fluorine-based surfactants such as F Top EF301, 303 and 352 (of Shin Akita Kasei Co., Ltd.), Megafac F171, 172 and 173 (of Dainippon Ink & Chemicals, Inc.), Florade FC430 and 431 (of Sumitomo 3M Limited), Asahi Guard AG710, Surflon S-3
- the amount of the surfactant is preferably 2 parts or less by weight, more preferably 1 part or less by weight based on 100 parts by weight of the total solid content of the composition.
- the radiation sensitive resin composition of the present invention is prepared by uniformly mixing together (A) an alkali soluble resin, (B) the compound represented by the above formulae (I) to (IV) and (C) a compound represented by the above formula (V) or (VI) and optionally used other additives.
- the radiation sensitive resin composition of the present invention is advantageously used as a solution prepared by dissolving the above components in a suitable solvent.
- the radiation sensitive resin composition in a solution state can be prepared by mixing together (A) the alkali soluble resin, (B) the compound represented by the above formulae (I) to (IV) and (C) compound represented by the above formula (V) or (VI) and optionally added other compounding ingredients in a predetermined ratio.
- the solvent used to prepare the radiation sensitive resin composition of the present invention uniformly dissolves (A) the alkali soluble resin, (B) the compound represented by the above formulas (I) to (IV) and (C) compound represented by the above formula (V) or (VI) and optionally added other additives and does not react with these components.
- the solvent examples include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycols such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol dimethyl ether; propylene glycol monoalkyl ethers such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether and propylene glycol butyl ether; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate and propylene glyco
- glycol ethers ethylene glycol alkyl ether acetates, propylene glycol alkyl ether acetates, esters and diethylene glycols are preferred from the viewpoints of solubility, reactivity with the above components and the formation ease of a coating film.
- a high-boiling solvent may be used in conjunction with the above solvent.
- the high-boiling solvent include N-methylformamide, N,N-dimethylformamide, N-methylformanilide, N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzylethyl ether, dihexyl ether, acetonylacetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, ⁇ -butyrolactone, ethylene carbonate, propylene carbonate and phenyl cellosolve acetate.
- the radiation sensitive resin composition of the present invention is prepared by using the above solvent and can be prepared to a suitable solid content according to its use purpose.
- the solid content may be, for example, 10 to 50 wt %, preferably 20 to 40 wt %.
- composition solution prepared as described above may be filtered with a Millipore filter having a pore diameter of 0.5 ⁇ m before use.
- a coating film is formed by applying a solution of the radiation sensitive resin composition of the present invention to the surface of a substrate and heating to remove the solvent.
- Spray coating, roll coating and rotational coating may be used to apply the solution of the radiation sensitive resin composition to the surface of the substrate.
- This coating film is then prebaked.
- the solvent is volatilized by heating to obtain a coating film having no fluidity.
- the heating conditions which differ according to the type and amount of each component are preferably selected from a wide temperature range of 60 to 120° C. and a wide time range of 10 to 600 sec.
- the obtained coating film of the radiation sensitive resin composition is exposed to radiation on the surface thereof through a mask having a predetermined pattern shape.
- the amount of energy of the radiation that is, the type of the radiation is suitably determined according to desired resolution and wavelength to which the radiation sensitive compound is sensitive.
- ultraviolet radiation such as g-line (wavelength of 436 nm), h-line (405 nm) and i-line (365 nm)
- deep ultraviolet ray such as excimer (KrF, ArF) laser light
- X-ray such as synchrotron radiation
- charged corpuscular beams such as electron beams
- PEB post-exposure baking
- the PEB temperature is preferably 200° C. or less and the PEB time is preferably 0.1 to 10 minutes.
- the coating film is developed with a developer to remove unrequired portions.
- an aqueous solution of an alkali such as an inorganic alkali exemplified by sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and ammonia water; primary amine exemplified by ethylamine and n-propylamine; secondary amine exemplified by diethylamine and di-n-propylamine; tertiary amine exemplified by triethylamine, methyldiethylamine and N-methylpyrrolidone; alcohol amine exemplified by dimethylethanolamine and triethanolamine; quaternary ammonium salt exemplified by tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline; or cyclic amine exemplified by pyrrole, piperidine, 1,8-diazabicyclo[5.4.0]-7-undecene and 1,5-di
- aqueous solution prepared by adding a water-soluble organic solvent such as methanol or ethanol, or a surfactant to the above alkali aqueous solution in an appropriate amount may also be used.
- the development time is, for example, 30 to 180 sec. and puddle development and dipping development may be used.
- the developed coating film is washed with running water for 30 to 90 sec. and dried with compressed air or compressed nitrogen to remove water on the substrate to form a coating film pattern.
- the coating film is heated at a predetermined temperature, for example, 150 to 250° C. by a heating unit such as a hot plate or oven for a predetermined time, for example, 5 to 30 minutes on the hot plate or 30 to 90 minutes in the oven to obtain a crosslinked film pattern.
- a heating unit such as a hot plate or oven for a predetermined time, for example, 5 to 30 minutes on the hot plate or 30 to 90 minutes in the oven to obtain a crosslinked film pattern.
- the cathode separator of the present invention preferably has a trapezoidal cross section in an irradiation direction with the top side longer than the bottom side (inversely tapered shape), more preferably an angle formed between a straight line connecting the upper pattern edge and the lower pattern edge and the top side of 15 to 750. Since the cross section of the cathode separator is inversely tapered, the deposition of an organic EL material from above and not an oblique direction is made possible. That is, the organic EL material is deposited from above so that it is uniformly adhered to an opening between adjacent cathode separators, thereby making it possible to secure sufficient brightness for a display device. When a cathode material is deposited from above, it can be prevented from being adhered to a lower portion of the inversely tapered shape, thereby making it possible to ensure insulation between cathodes.
- the amount of a volatile component generated from the cathode separator of the present invention by heating at 25 to 200° C. is preferably 10 wt % or less, more preferably 5 wt % or less, much more preferably 2 wt % or less, particularly preferably 1 wt % or less.
- the intrusion of impurities into the EL layer can be prevented, thereby making it possible to eliminate the occurrence of a lighting failure of the EL display device and a reduction in the brightness of emission.
- the amount of the volatile component can be evaluated by TDS (Thermal Desorption Spectroscopy) measurement or the like.
- the organic EL display device of the present invention comprises cathode separators formed as described above.
- the organic EL display device of the present invention is produced as follows, for example.
- a transparent electrode such as ITO is formed on a glass substrate by sputtering, and a positive photoresist is applied to the transparent electrode and prebaked.
- the resist is exposed through a mask and developed to form a resist pattern, the ITO film is etched by a hydrochloric acid-based etchant such as ferric chloride, and the resist film is removed to obtain a transparent electrode pattern, for example, a striped pattern.
- the radiation sensitive resin composition of the present invention is applied to the surface of the substrate having the transparent electrode pattern to form inversely tapered cathode separators as described above. Subsequently, a hole transfer layer, organic EL layer and cathode layer are formed by vapor deposition sequentially.
- the hole transfer layer is made from a phthalocyanine-based material such as CuPc or H 2 Pc, or an aromatic amine.
- the organic EL material is prepared by doping a base material such as Alq 3 or BeBq 3 with quinacridone or coumarin.
- the cathode material is, for example, Mg—Al, Al—Li, Al—Li 2 O or Al—LiF.
- An organic EL display device is then produced by sealing a hollow-structured stainless steel can and the above substrate with a sealing material such as an epoxy resin and assembling them into a module.
- reaction product was then washed with 1,000 ml of deionized water three times, and 500 ml of propylene glycol monomethyl ether acetate was added to carry out solvent substitution to obtain a solution containing an alkali soluble resin (A-1) (polyhydroxystyrene) having an Mw of 24,000.
- A-1 polyhydroxystyrene
- composition solution (S-1) was applied to the surface of a glass substrate by a spinner and prebaked on a hot plate at 110° C. for 3 minutes to form a 5 ⁇ m thick coating film.
- the above obtained coating film was exposed to ultraviolet radiation having an intensity of 10 mW/cm 2 at 365 nm through a pattern mask having 10 ⁇ m ⁇ 10 ⁇ m openings for 10 seconds. This exposure was carried out in an oxygen atmosphere (in the air). Thereafter, this exposed coating film was developed with a 2.38 wt % aqueous solution of tetramethylammonium hydroxide at 25° C. for 90 seconds and washed with running pure water for 1 minutes. The formed cathode separators were heated in an oven at 220° C. for 60 minutes to be cured to obtain 4.5 ⁇ m thick cathode separators.
- the upper tapered angle of the sectional shape of the cathode separator obtained in (I) above is shown in Table 1. When this angle is 20 to 80°, it can be said that the cathode separator is satisfactory. When a cathode separator has a normally tapered cross section with an angle larger than 80°, or is rectangular with an angle of 90° or more, the cathode separator is not accepted.
- the cathode separators formed in (I) above were heated in an oven at 250° C. for 60 minutes.
- the dimensional change rate of film thickness is shown in Table 1. When the dimensional change rate before and after heating is within ⁇ 5%, it can be said that heat resistant dimensional stability is satisfactory.
- a composition solution (S-2) was prepared and evaluated in the same manner as in Example 1 except that 100 parts by weight of the alkali soluble resin (A-2) was used as the component (A). The results are shown in Table 1.
- a composition solution (S-3) was prepared and evaluated in the same manner as in Example 1 except that the solution containing an alkali soluble resin (A-3) (corresponding to 100 parts by weight (solid content) of the resin (A-3)) was used as the component (A). The results are shown in Table 1.
- a composition solution (S-4) was prepared and evaluated in the same manner as in Example 1 except that the solution containing an alkali soluble resin (A-4) (corresponding to 100 parts by weight (solid content) of the resin (A-4)) was used as the component (A). The results are shown in Table 1.
- a composition solution (S-5) was prepared and evaluated in the same manner as in Example 1 except that a mixture of the solution containing an alkali soluble resin (A-1) (corresponding to 80 parts by weight (solid content) of the resin (A-1)) and 20 parts by weight of bisphenol A were used as the component (A). The results are shown in Table 1.
- a composition solution (S-6) was prepared and evaluated in the same manner as in Example 1 except that a mixture of 80 parts by weight of the alkali soluble resin (A-2) and 20 parts by weight of bisphenol A was used as the component (A). The results are shown in Table 1.
- composition solution (S-7) was prepared and evaluated in the same manner as in Example 1 except that 2 parts by weight of 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadien-3,5-dione was added as an ultraviolet light absorber. The results are shown in Table 1.
- composition solution (S-8) was prepared and evaluated in the same manner as in Example 2 except that 2 parts by weight of 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadien-3,5-dione was added as an ultraviolet light absorber. The results are shown in Table 1.
- a composition solution (S-9) was prepared and evaluated in the same manner as in Example 1 except that 20 parts by weight of Cymel 1174 (of Mitsui Cyanamid Co., Ltd.) was used as the component (B) instead of 20 parts by weight of Cymel 300.
- the results are shown in Table 1.
- TABLE 1 tapered heat resistance volatile component angle (%) (%) Ex. 1 55 ⁇ 4 1.3
- Ex. 2 50 ⁇ 5 1.6 Ex. 3 50 ⁇ 3 0.9 Ex. 4 50 ⁇ 4 0.8 Ex. 5 45 ⁇ 4 1.3
- Ex. 6 45 ⁇ 5 1.6 Ex. 7 35 ⁇ 4 1.3
- Ex. 8 35 ⁇ 5 1.6 Ex. 9 50 ⁇ 5 2.0 Ex.:
- a radiation sensitive resin composition which is capable of easily forming cathode separators having excellent performance such as an inversely tapered shape, heat resistance and low volatility.
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Abstract
A radiation sensitive resin composition for the formation of cathode separators for EL display devices which have heat resistance and adhesion required for cathode separators for EL display devices and an inversely tapered shape, cathode separators formed therefrom and an EL display device comprising the cathode separators. The radiation sensitive resin composition for the formation of cathode separators for EL display devices comprises (A) an alkali soluble resin, (B) the compound represented by the formulae (I) to (IV) and (C) a trihalomethyltriazine and/or an onium salt, the cathode separators are formed from the radiation sensitive resin composition and the EL display device comprises the cathode separators formed from the radiation sensitive resin composition.
Description
- The present invention relates to a radiation sensitive resin composition for the formation of cathode separators for EL display devices, a cathode separator and an EL display device. More specifically, it relates to a radiation sensitive resin composition suitable for use as a material for the formation of cathode separators for EL display devices, a cathode separator formed therefrom and an EL display device.
- Generally speaking, it is difficult to carry out the micropatterning of the cathode or organic EL layer of an organic EL device due to the low heat resistance (generally 100° C. or less), solvent resistance and moisture resistance of an organic EL material used in an electron transfer layer and emissive layer. For example, when photolithography used for the patterning of a thin film is used for an organic EL device, the characteristics of the organic EL device are deteriorated by the infiltration of a solvent contained in a photoresist into the organic EL device, the infiltration of a high-temperature atmosphere during the baking of the photoresist, a photoresist developer or etchant into the organic EL device and damage caused by plasma at the time of dry etching.
- Although patterning may be carried out using a deposition mask, a fine pattern cannot be formed by the inclusion of a deposited product caused by poor adhesion between the mask and a substrate during vapor deposition, a short circuit between a cathode and an anode made of indium tin oxide (to be abbreviated as ITO hereinafter) caused by the damage of an organic EL layer by contact with the mask when the substrate and the deposition mask are closely adhered to each other forcedly, and the deflection of the mask due to insufficient strength in the case of a striped cathode pattern with small masking portions and large openings.
- To solve the above problems, the technology disclosed by JP-A 2-66873 (the term “JP-A” as used herein means an “unexamined published Japanese patent application”) is to pattern a photoresist comprising a solvent which does not dissolve an organic EL material on the organic EL device and etch a cathode using diluted sulfuric acid. However, the organic EL material is damaged by the diluted sulfuric acid at the time of etching.
- The technology disclosed by JP-A 5-275172, JP-A 5-258859 and JP-A 5-258860 is to form cathode separators having a tapered cross section with a height of several to several tens of micrometers and arranged parallel to one another on a substrate after ITO patterning and to deposit an organic EL material and a cathode material from a direction perpendicular to the cathode separators and a direction diagonal to the surface of the substrate on the substrate for patterning. That is, a method of forming a first electrode line and an organic EL material thin film by vacuum deposition in an oblique direction selectively by shutting out a predetermined gas stream with high cathode separators formed at the boundary on the substrate in order to prevent a space between cathode separators from being polluted during deposition. However, in this oblique deposition method, a portion where the organic EL material is not deposited is existent in an opening between cathode separators and the brightness of a display device becomes unsatisfactory. JP-A 8-315981 uses cathode separator having a overhung cross section (trapezoidal with a bottom side shorter than a top side) to enable vacuum deposition from above and eliminate the above defect of oblique deposition. However, generally existing resist materials have low heat resistance and cannot retain an inversely tapered shape due to softening during curing.
- When a volatile component derived from the cathode separator material is contained in an EL layer as an impurity, it may cause such a problem as a reduction in the light emitting area of an EL light emitting device or a lighting failure.
- Problems to be Solved by the Invention
- It is therefore an object of the present invention which has been made in view of the above situation to provide a radiation sensitive resin composition for the formation of cathode separators for EL display devices which have required heat resistance and adhesion and an inversely tapered shape.
- It is another object of the present invention to provide a cathode separator formed from the above radiation sensitive resin composition and an EL display device comprising the cathode separators.
- Other objects and advantages of the present invention will become apparent from the following description.
- According to the present invention, firstly, the above objects and advantages of the present invention are attained by a radiation sensitive resin composition, which comprises:
- (A) an alkali soluble resin;
-
-
- wherein six Rs may be the same or different and each a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,
a compound represented by the following formula (II): - wherein Rs are defined as above,
a compound represented by the following formula (III): - wherein Rs are defined as above,
and a compound represented by the following formula (IV): - wherein Rs are defined as above; and
- wherein six Rs may be the same or different and each a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,
- (C) a trihalomethyltriazine represented by the following formula (V):
wherein X is a halogen atom and A is CX3 or a group represented by the following formulas:
B, D and E are each independently a hydrogen atom, alkyl group, aryl group, alkoxy group, aryloxy group, thioalkyl group or thioaryl group having 1 to 10 carbon atoms, halogen atom, cyano group, nitro group, secondary amino group having an alkyl group with 1 to 10 carbon atoms, carboxyl group, hydroxyl group, ketoalkyl group or ketoaryl group having 1 to 10 carbon atoms, or alkoxycarbonyl group or alkylcarbonyloxy group having 1 to 20 carbon atoms, and m is an integer of 1 to 5, or an onium salt which serves as an optically acid generating agent represented by the following formula (VI):
(A)nZ+Y− (VI)
wherein A is as defined hereinabove, Z is sulfur or iodine, Y is BF4, PF6, SbF6, AsF6, p-toluene sulfonate, trifluoromethane sulfonate or trifluoroacetate, and n is 2 or 3, and which is for formation of cathode separators for EL display devices. - Secondly, the above objects and advantages of the present invention are attained by a cathode separator for EL display devices, which is formed from the above radiation sensitive resin composition.
- Thirdly, the above objects and advantages of the present invention are attained by an EL display device comprising the above cathode separators.
- The El display device of the present invention comprehends an organic EL display device and an inorganic EL display device. Out of these, the organic EL display device is preferred.
- Each component of the radiation sensitive resin composition of the present invention will be detailed hereinbelow.
- (A) Alkali Soluble Resin
- The alkali soluble resin used in the present invention is not particularly limited if it is alkali-soluble. A novolak resin, a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and a copolymer of the radical polymerizable monomer and another radical polymerizable monomer are preferred as the alkali soluble resin.
- The novolak resin is alkali-soluble and is obtained by polycondensing a phenol, preferably a phenol containing m-cresol, and an aldehyde. As the phenol other than m-cresol (to be simply referred to as “phenolic monomer” hereinafter) used in the production of the novolak resin are advantageously used phenol, p-cresol, o-cresol, 2,3-xylenol, 2,5-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, catechol, resorcinol, hydroquinone, methylhydroquinone, pyrogallol and phloroglucinol. These phenolic monomers may be used alone or in combination of two or more, preferably in combination with m-cresol.
- The molar ratio of m-cresol to the phenolic monomer is preferably 20/80 to 100/0, more preferably 30/70 to 100/0. When the amount of m-cresol is smaller than 20 mol %, the resolution of the obtained composition tends to deteriorate.
- The phenol is polycondensed with an aldehyde such as formaldehyde or acetaldehyde in the presence of an acid catalyst such as oxalic acid to obtain a novolak resin of interest.
- Water is generally used as a reaction medium in the polycondensation reaction. When the phenol used in the polycondensation reaction does not dissolved in an aqueous solution of an aldehyde and a heterogeneous system is formed from the beginning of the reaction, a hydrophilic organic solvent may be used as the reaction medium. Examples of the solvent used in this case include alcohols such as methanol, ethanol and butanol, and cyclic ethers such as tetrahydrofuran and dioxane. The amount of the reaction medium is preferably 20 to 400 parts by weight based on 100 parts by weight of the total of the reaction raw materials.
- The polycondensation reaction temperature can be suitably adjusted according to the reactivity of the reaction raw materials but it is preferably 10 to 200° C. After the end of the polycondensation reaction, the novolak resin can be recovered by elevating the temperature to 130 to 230° C. to remove an unreacted raw material, acid catalyst and reaction medium existent in the system and distilling off a volatile component under reduced pressure.
- The novolak resin used in the present invention has a weight average molecular weight in terms of standard polystyrene (to be referred to as “Mw” hereinafter) of preferably 2,000 to 30,000, particularly preferably 3,500 to 20,000. When Mw is more than 30,000, the developability of the composition of the present invention may deteriorate and when Mw is less than 2,000, film formation properties may worsen. In the radiation sensitive resin composition of the present invention, the above novolak resins may be used alone or in combination of two or more.
- Preferred examples of the radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group used to synthesize a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and a copolymer of the radical polymerizable monomer and another radical polymerizable monomer include o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene and alkyl, alkoxy, halogen, haloalkyl, nitro, cyano, amide, ester and carboxy substituted products thereof; polyhydroxyvinyl phenols such as vinylhydroquinone, 5-vinylpyrogallol, 6-vinylpyrogallol and 1-vinylphloroglucinol; o-vinylbenzoic acid, m-vinylbenzoic acid, p-vinylbenzoic acid, and alkyl, alkoxy, halogen, nitro, cyano, amide and ester substituted products thereof; methacrylic acid, acrylic acid, and a-position haloalkyl, alkoxy, halogen, nitro and cyano substituted products thereof; divalent unsaturated carboxylic acids such as maleic acid, maleic anhydride, fumaric acid, fumaric anhydride, citraconic acid, mesaconic acid, itaconic acid, 1,4-cyclohexenedicarboxylic acid, and methyl, ethyl, propyl, i-propyl, n-butyl, sec-butyl, ter-butyl, phenyl, o-, m- and p-toluyl half-ester and half-amide thereof.
- Out of these, o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, and alkyl and alkoxy substituted products thereof are preferred from the viewpoints of sensitivity at the time of patterning, resolution, film retention after development, thermal deformation resistance, solvent resistance, adhesion to the base and solution keeping stability.
- They may be used alone or in combination of two or more.
- Examples of the another radical polymerizable monomer include styrene, α-position, o-position, m-position and p-position alkyl, alkoxy, halogen, haloalkyl, nitro, cyano, amide and ester substituted products of styrene; diolefins such as butadiene, isoprene and chloroprene; methyl, ethyl, n-propyl, i-propyl, n-butyl, sec-butyl, ter-butyl, pentyl, neopentyl, isoamylhexyl, cyclohexyl, adamantyl, allyl, propargyl, phenyl, naphthyl, anthracenyl, anthraquinonyl, piperonyl, salicyl, cyclohexyl, benzyl, phenethyl, cresyl, glycidyl, 1,1,1-trifluoroethyl, perfluoroethyl, perfluoro-n-propyl, perfluoro-i-propyl, triphenylmethyl, tricyclo[5.2.1.02.6]decan-8-yl (commonly called “dicyclopentanyl” in this technical field), cumyl, 3-(N,N-dimethylamino)propyl, 3-(N,N-dimethylamino)ethyl, furyl and furfuryl esterified products of methacrylic acid and acrylic acid; anilide, amide, N,N-dimethyl, N,N-diethyl, N,N-dipropyl, N,N-diisopropyl, anthranylamide, acrylonitrile, acrolein, methacrylonitrile, vinyl chloride, vinylidene chloride, vinyl fluoride, vinylidene fluoride, N-vinylpyrrolidone, vinylpyridine, vinyl acetate, N-phenylmaleinimide, N-(4-hydroxyphenyl)maleinimide, N-methacryloylphthalimide and N-acryloylphthalimide of methacrylic acid and acrylic acid. They may be used alone or in combination of two or more.
- Out of these, styrene, and α-position, o-position, m-position and p-position alkyl, alkoxy, halogen and haloalkyl substituted products of styrene; butadiene and isoprene; and methyl, ethyl, n-propyl, N-butyl, glycidyl and dicyclopentanyl esterified products of methacrylic acid and acrylic acid are particularly preferred from the viewpoints of sensitivity at the time of patterning, resolution, film retention after development, thermal deformation resistance, solvent resistance, adhesion to the base and solution keeping stability.
- When a copolymer of a radical polymerizable monomer having a phenolic hydroxyl group and another radical polymerizable monomer is used as the alkali soluble resin, the amount of the another radical polymerizable monomer is preferably 30 wt % or less, particularly preferably 5 to 20 wt % based on the total weight of the radical polymerizable monomer having a phenolic hydroxyl group and the another radical polymerizable monomer.
- When a copolymer of a radical polymerizable monomer having a carboxyl group and another radical polymerizable monomer is used as the alkali soluble resin, the amount of the another radical polymerizable monomer is preferably 90 wt % or less, particularly preferably 10 to 80 wt % based on the total weight of the radical polymerizable monomer having a carboxyl group and the another radical polymerizable monomer.
- When the ratio of the another radical polymerizable monomer to the radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group is outside the above range, alkali development may become difficult.
- Generally known radical polymerization initiators may be used as the polymerization initiator used in the production of a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group or a copolymer of the radical polymerizable monomer and another radical polymerizable monomer, as exemplified by azo compounds such as 2,2′-azobisisobutyronitrile, 2,2′-azobis-(2,4-dimethylvaleronitrile) and 2,2′-azobis-(4-methoxy-2,4-dimethylvaleronitrile; organic peroxides such as benzoyl peroxide, lauroyl peroxide, t-butyl peroxypivalate and 1,1′-bis-(t-butylperoxy)cyclohexane; and hydrogen peroxide. When a peroxide is used as the radical polymerization initiator, the peroxide may be used in conjunction with a reducer as a redox initiator.
- Examples of the solvent used in the production of a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group or a copolymer of the radical polymerizable monomer and another radical polymerizable monomer include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycols such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether and diethylene glycol ethylmethyl ether; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether and propylene glycol monobutyl ether; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate and propylene glycol butyl ether acetate; propylene glycol alkyl ether propionates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate and propylene glycol butyl ether propionate; aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, cyclohexanone and 4-hydroxy-4-methyl-2-pentanone; and esters such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl hydroxyacetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, methyl propoxyacetate, ethyl propoxyacetate, propyl propoxyacetate, butyl propoxyacetate, methyl butoxyacetate, ethyl butoxyacetate, propyl butoxyacetate, butyl butoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate, butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, propyl 3-propoxypropionate, butyl 3-propoxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate and butyl 3-butoxypropionate.
- The amount of the solvent is preferably 20 to 1,000 parts by weight based on 100 parts by weight of the total of the reaction raw materials.
- The weight average molecular weight in terms of polystyrene of a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group or a copolymer of the radical polymerizable monomer and another radical polymerizable monomer is preferably 2,000 to 100,000, more preferably 3,000 to 50,000, particularly preferably 5,000 to 30,000.
- When the average molecular weight is smaller than 2,000, the pattern shape, resolution, developability and heat resistance are apt to deteriorate and when the average molecular weight is larger than 100,000, developability, particularly sensitivity often tends to degrade.
- The above homopolymers of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and the above copolymers of the radical polymerizable monomer and another radical polymerizable monomer may be used alone or in combination of two or more.
- Before polymerization, a protective group may be introduced into the carboxyl group or phenolic hydroxyl group and removed after polymerization to provide alkali solubility so as to synthesize an alkali soluble resin. Further, visible light transmission and softening point may be changed by hydrogenation.
- As described above, a novolak resin, a homopolymer of a radical polymerizable monomer having a phenolic hydroxyl group or carboxyl group and a copolymer of the radical polymerizable monomer and another radical polymerizable monomer are preferably used as the alkali soluble resin (A) used in the present invention. Part of the alkali soluble resin (A) may be substituted with another phenolic compound.
- The another phenolic compound used in the present invention is a phenolic compound having a molecular weight of 1,000 or less. When the molecular weight of the phenolic compound is larger than 1,000,resolution degrades. Examples of the low-molecular weight phenolic compound include compounds having the following structures.
In the above formulas, R2's may be the same or different and each a hydrogen atom or methyl group, and a, b, c, d, k, l, m and n are each an integer of 0 to 3, with the proviso that a+b+c+d≧2. - When part of the alkali soluble resin (A) is substituted with another phenolic compound, the amount of the another phenolic compound is preferably 80 wt % or less, more preferably 50 wt % or less based on the total weight of the alkali soluble resin (A) and the another phenolic compound. When the amount of the another phenolic compound is larger than 80 wt %, a coating film may not be formed.
- (B) Compound Represented by the Formula (I) to (IV)
- Examples of the compounds represented by the above formulae (I) to (IV) include hexamethoxymethylolmelamine, hexabutoxymethylolmelamine, tetramethoxymethylolbenzoquanamine, tetramethoxymethylolguanamine, tetramethoxymethylolglycoluril. These compounds may be used alone or in admixture. And these compounds may be used as pure compound or as a mixture with an oligomer of such compound having a weight average molecular weight of 1,500 or less.
- Out of these compounds, commercially available Cymel 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65 and 300 (of Mitsui Cyanamid Co., Ltd.), Nikalack Mx-750, -032, -706, -708, -40 and -31, Nikalack Ms-11, and Nikalack Mw-30 (of Sanwa Chemical Co., Ltd.) are preferred.
- The amount of the compound is preferably 1 to 100 parts by weight, more preferably 5 to 50 parts by weight based on 100 parts by weight of the alkali soluble resin (A). When the amount is smaller than 1 part by weight, film retention after development may lower and heat resistance and solvent resistance may deteriorate.
- (C) Trihalomethyltriazine Represented by the Formula (V) or Onium Salt Serving as Optically Acid Generating Agent Represented by the Formula (VI)
- Examples of the trihalomethyltriazine represented by the above formula (V) include
- 2,4,6-tris(trichloromethyl)-s-triazine,
- 2-phenyl-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-chlorophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3-chlorophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(2-chlorophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(2-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methylthiophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3-methylthiophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(2-methylthiophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(2-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methoxy-β-styryl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3-methoxy-β-styryl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(2-methoxy-β-styryl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3,4,5-trimethoxy-β-styryl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methylthio-β-styryl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(3-methylthio-β-styryl)-4,6-bis(trichloromethyl)-s-triazine and
- 2-(2-methylthio-β-styryl)-4,6-bis(trichloromethyl)-s-triazine.
- Examples of the onium salt represented by the above formula (VI) include diaryl iodonium salts such as diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, diphenyliodonium trifluoromethane sulfonate, diphenyliodonium trifluoroacetate, diphenylindonium-p-toluene sulfonate,
- 4-methoxyphenylphenyliodonium tetrafluoroborate,
- 4-methoxyphenylphenyliodonium hexafluorophosphonate,
- 4-methoxyphenylphenyliodonium hexafluoroarsenate,
- 4-methoxyphenylphenyliodonium trifluoromethane sulfonate,
- 4-methoxyphenylphenyliodonium trifluoroacetate,
- 4-methoxyphenylphenyliodonium-p-toluene sulfonate,
- bis(4-ter-butylphenyl)iodonium tetrafluoroborate,
- bis(4-ter-butylphenyl)iodonium hexafluorophosphonate,
- bis(4-ter-butylphenyl)iodonium hexafluoroarsenate,
- bis(4-ter-butylphenyl)iodoniumtrifluoromethane sulfonate,
- bis(4-ter-butylphenyl)iodonium trifluoroacetate and
- bis(4-ter-butylphenyl)iodonium-p-toluene sulfonate; and
- triaryl sulfonium salts such as triphenylsulfonium tetrafluoroborate, triphenylsulfonium hexafluorophosphonate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium trifluoromethane sulfonate, triphenylsulfonium trifluoroacetate, triphenylsulfonium-p-toluene sulfonate,
- 4-methoxyphenyldiphenylsulfonium tetrafluoroborate,
- 4-methoxyphenyldiphenylsulfonium hexafluorophosphonate,
- 4-methoxyphenyldiphenylsulfonium hexafluoroarsenate,
- 4-methoxyphenyldiphenylsulfonium trifluoromethane sulfonate, 4-methoxyphenyldiphenylsulfonium trifluoroacetate,
- 4-methoxyphenyldiphenylsulfonium-p-toluene sulfonate,
- 4-phenylthiophenyldiphenyl tetrafluoroborate,
- 4-phenylthiophenyldiphenyl hexafluorophosphonate,
- 4-phenylthiophenyldiphenyl hexafluoroarsenate,
- 4-phenylthiophenyldiphenyl trifluoromethane sulfonate,
- 4-phenylthiophenyldiphenyl trifluoroacetate and
- 4-phenylthiophenyldiphenyl-p-toluene sulfonate.
- Out of these compounds,
- 2-(3-chlorophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methylthiophenyl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methoxy-β-styryl)-4,6-bis(trichloromethyl)-s-triazine,
- 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, diphenyliodonium trifluoroacetate, diphenylindonium trifluoromethane sulfonate,
- 4-methoxyphenylphenyliodonium trifluoromethane sulfonate,
- 4-methoxyphenylphenyliodonium trifluoroacetate, triphenylsulfonium trifluoromethane sulfonate, triphenylsulfonium trifluoroacetate,
- 4-methoxyphenyldiphenylsulfonium trifluoromethane sulfonate, 4-methoxyphenyldiphenylsulfonium trifluoroacetate, 4-phenylthiophenyldiphenyl trifluoromethane sulfonate and 4-phenylthiophenyldiphenyl trifluoroacetate are preferred.
- The amount of the compound represented by the above formula (V) or (VI) is preferably 0.001 to 10 parts by weight, more preferably 0.01 to 5 parts by weight based on 100 parts by weight of the alkali soluble resin (A). When the amount is smaller than 0.001 part by weight, the heat resistance and solvent resistance of the cathode separators may lower. When the amount is larger than 10 parts by weight, the control of the pattern shape after development may become difficult.
- The compound represented by the formula (V) or (VI) may be used in conjunction with a suitable sensitizer. Examples of the sensitizer include coumarins having a substituent at least one position of the 3-position and 7-position, flavones, dibenzalacetones, dibenzalcyclohexanes, chalcones, xanthenes, thioxanthenes and porphylins and acridines. The amount of the ultraviolet light absorbing compound is preferably 20 parts or less by weight, more preferably 10 parts or less by weight based on 100 parts by weight of the alkali soluble resin (A). When the amount is larger than 20 parts by weight, the sensitizer tends to provide a filter effect, thereby making it difficult for radiation to reach the substrate.
- Components other than the above components may be contained in the composition of the present invention as required in limits not prejudicial to the object of the present invention.
- The other components include an ultraviolet light absorber, compound containing two or more epoxy groups in the molecule, surfactant, adhesion aid, keeping stabilizer and anti-foaming agent.
- The above ultraviolet light absorber may be added mainly to obtain a good inversely tapered shape. The ultraviolet light absorbing compound used in the present invention absorbs light having a wavelength of less than 400 nm, particularly 365 nm, rarely absorbs visible light and is soluble in solvents to be described hereinafter. Examples of the ultraviolet light absorber include benzotriazoles, salicylates, benzophenones, substituted acrylonitriles, xanthenes, coumarins, flavones and chalcones. More specifically, Tinubin 234 (2-(2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl)-2H-benzotriazole), Tinubin 571 (hydroxyphenylbenzotriazole derivative), Tinubin 1130 (condensate between methyl-3-(3-t-butyl-5-(2H-benzotriazol-2-yl)-4-hydroxyphenyl)propionate and polyethylene glycol (molecular weight of 300)) (of Chiba Specialty Chemicals Co., Ltd.), 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadiene-3,5-dione and dibenzylideneacetone are commercially available. The amount of the ultraviolet light absorber is preferably 20 parts or less by weight, more preferably 10 parts or less by weight based on 100 parts by weight of the alkali soluble resin (A). When the ultraviolet light absorber is added in an amount of more than 20 parts by weight, sensitivity is liable to lower.
- The compound containing two or more epoxy groups in the molecule may be blended mainly to improve heat resistance and adhesion. Examples of the compound containing two or more epoxy groups in the molecule include bisphenol A epoxy resins such as Epicoat 1001, 1002, 1003, 1004, 1007, 1009, 1010 and 828 (of Yuka Shell Epoxy Co., Ltd.); bisphenol F epoxy resins such as Epicoat 807 (of Yuka Shell Epoxy Co., Ltd.); phenol novolak epoxy resins such as Epicoat 152 and 154 (of Yuka Shell Epoxy Co., Ltd.) and EPPN201 and 202 (of Nippon Kayaku Co., Ltd.); cresol novolak type epoxy resins such as EOCN-102, 103S, 104S, 1020, 1025 and 1027 (of Nippon Kayaku Co., Ltd.) and Epicoat 180S75 (of Yuka Shell Epoxy Co., Ltd.); cyclic aliphatic epoxy resins such as CY-175, 177 and 179 (of CIBA-GEIGY A.G), ERL-4234, 4299, 4221 and 4206 (of U.C.C. Co., Ltd.), Showdyne 509 (of Showa Denko K.K.), Araldyte CY-182, 192 and 184 (of CIBA-GEIGY A.G.), Epichlon 200 and 400 (of Dainippon Ink & Chemicals, Inc.), Epicoat 871 and 872 (of Yuka Shell Epoxy Co., Ltd.), and ED-5661 and 5662 (of Celaneas Coating Co., Ltd.); and aliphatic polyglycidyl ethers such as Epolite 100MF (of Kyoeisha Kagaku Co., Ltd.) and Epiol TMP (of NOF Corporation). Out of these, bisphenol A epoxy resins, bisphenol F epoxy resins, phenol novolak epoxy resins, cresol novolak epoxy resins and aliphatic polyglycidyl ethers are preferred.
- A compound such as a glycidyl ether of bisphenol A or bisphenol F may also be suitably used. The amount of the compound containing two or more epoxy groups in the molecule is preferably 1 to 100 parts by weight, more preferably 5 to 50 parts by weight based on 100 parts by weight of the alkali soluble resin (A).
- When a copolymer having a structural unit derived from a monomer containing an epoxy group such as glycidyl (meth)acrylate is used as the alkali soluble resin (A), it can be said that the component (A) is a “compound containing two or more epoxy groups in the molecule” but differs from the compound in that it is required to have alkali solubility and to be a relatively high molecular weight polymer.
- The above surfactant may be blended to improve striation and the developability of a radiation exposed portion after the formation of a dried coating film. Examples of the surfactant include nonionic surfactants such as polyoxyethylene alkyl ethers including polyoxyethylene lauryl ether, polyoxyethylene stearyl ether and polyxoyethylene oleyl ether, polyoxyethylene aryl ethers including polyoxyethylene octylphenyl ether and polyoxyethylene nonylphenyl ether, and polyethylene glycol dialkyl esters including polyethylene glycol dilaurate and polyethylene glycol distearate; fluorine-based surfactants such as F Top EF301, 303 and 352 (of Shin Akita Kasei Co., Ltd.), Megafac F171, 172 and 173 (of Dainippon Ink & Chemicals, Inc.), Florade FC430 and 431 (of Sumitomo 3M Limited), Asahi Guard AG710, Surflon S-382, SC-101, 102, 103, 104, 105 and 106 (of Asahi Glass Co., Ltd.); organosiloxane polymer KP341 (of Shin-Etsu Chemical Co., Ltd.), and acrylic acid-based or methacrylic acid-based (co)polymer Polyflow No. 57 and 95 (of Kyoeisha Kagaku Co., Ltd.).
- The amount of the surfactant is preferably 2 parts or less by weight, more preferably 1 part or less by weight based on 100 parts by weight of the total solid content of the composition.
- Preparation of Radiation Sensitive Resin Composition
- The radiation sensitive resin composition of the present invention is prepared by uniformly mixing together (A) an alkali soluble resin, (B) the compound represented by the above formulae (I) to (IV) and (C) a compound represented by the above formula (V) or (VI) and optionally used other additives. The radiation sensitive resin composition of the present invention is advantageously used as a solution prepared by dissolving the above components in a suitable solvent. For example, the radiation sensitive resin composition in a solution state can be prepared by mixing together (A) the alkali soluble resin, (B) the compound represented by the above formulae (I) to (IV) and (C) compound represented by the above formula (V) or (VI) and optionally added other compounding ingredients in a predetermined ratio.
- The solvent used to prepare the radiation sensitive resin composition of the present invention uniformly dissolves (A) the alkali soluble resin, (B) the compound represented by the above formulas (I) to (IV) and (C) compound represented by the above formula (V) or (VI) and optionally added other additives and does not react with these components.
- Examples of the solvent include alcohols such as methanol and ethanol; ethers such as tetrahydrofuran; glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; diethylene glycols such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol dimethyl ether; propylene glycol monoalkyl ethers such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether and propylene glycol butyl ether; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate and propylene glycol butyl ether acetate; propylene glycol alkyl ether propionates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate and propylene glycol butyl ether propionate; aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, cyclohexanone and 4-hydroxy-4-methyl-2-pentanone; and esters such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl hydroxyacetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate and butyl 3-butoxypropionate.
- Out of these solvents, glycol ethers, ethylene glycol alkyl ether acetates, propylene glycol alkyl ether acetates, esters and diethylene glycols are preferred from the viewpoints of solubility, reactivity with the above components and the formation ease of a coating film.
- A high-boiling solvent may be used in conjunction with the above solvent. Examples of the high-boiling solvent include N-methylformamide, N,N-dimethylformamide, N-methylformanilide, N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzylethyl ether, dihexyl ether, acetonylacetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate and phenyl cellosolve acetate.
- The radiation sensitive resin composition of the present invention is prepared by using the above solvent and can be prepared to a suitable solid content according to its use purpose.
- The solid content may be, for example, 10 to 50 wt %, preferably 20 to 40 wt %.
- The composition solution prepared as described above may be filtered with a Millipore filter having a pore diameter of 0.5 μm before use.
- Method of Forming Cathode Separator
- The method of forming the cathode separator of the present invention from the radiation sensitive resin composition of the present invention will be detailed hereinbelow.
- A coating film is formed by applying a solution of the radiation sensitive resin composition of the present invention to the surface of a substrate and heating to remove the solvent. Spray coating, roll coating and rotational coating may be used to apply the solution of the radiation sensitive resin composition to the surface of the substrate.
- This coating film is then prebaked. The solvent is volatilized by heating to obtain a coating film having no fluidity.
- The heating conditions which differ according to the type and amount of each component are preferably selected from a wide temperature range of 60 to 120° C. and a wide time range of 10 to 600 sec.
- The obtained coating film of the radiation sensitive resin composition is exposed to radiation on the surface thereof through a mask having a predetermined pattern shape. The amount of energy of the radiation, that is, the type of the radiation is suitably determined according to desired resolution and wavelength to which the radiation sensitive compound is sensitive. For example, ultraviolet radiation such as g-line (wavelength of 436 nm), h-line (405 nm) and i-line (365 nm), deep ultraviolet ray such as excimer (KrF, ArF) laser light, X-ray such as synchrotron radiation, and charged corpuscular beams such as electron beams may be used, out of which g-line and i-line are preferred.
- After exposure to radiation, PEB (post-exposure baking) is carried out before alkali development. The PEB temperature is preferably 200° C. or less and the PEB time is preferably 0.1 to 10 minutes. After PEB, the coating film is developed with a developer to remove unrequired portions.
- As the developer may be used an aqueous solution of an alkali such as an inorganic alkali exemplified by sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and ammonia water; primary amine exemplified by ethylamine and n-propylamine; secondary amine exemplified by diethylamine and di-n-propylamine; tertiary amine exemplified by triethylamine, methyldiethylamine and N-methylpyrrolidone; alcohol amine exemplified by dimethylethanolamine and triethanolamine; quaternary ammonium salt exemplified by tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline; or cyclic amine exemplified by pyrrole, piperidine, 1,8-diazabicyclo[5.4.0]-7-undecene and 1,5-diazabicyclo[4.3.0]-5-nonane.
- An aqueous solution prepared by adding a water-soluble organic solvent such as methanol or ethanol, or a surfactant to the above alkali aqueous solution in an appropriate amount may also be used.
- The development time is, for example, 30 to 180 sec. and puddle development and dipping development may be used. After development, the developed coating film is washed with running water for 30 to 90 sec. and dried with compressed air or compressed nitrogen to remove water on the substrate to form a coating film pattern.
- Subsequently, the coating film is heated at a predetermined temperature, for example, 150 to 250° C. by a heating unit such as a hot plate or oven for a predetermined time, for example, 5 to 30 minutes on the hot plate or 30 to 90 minutes in the oven to obtain a crosslinked film pattern.
- The cathode separator of the present invention preferably has a trapezoidal cross section in an irradiation direction with the top side longer than the bottom side (inversely tapered shape), more preferably an angle formed between a straight line connecting the upper pattern edge and the lower pattern edge and the top side of 15 to 750. Since the cross section of the cathode separator is inversely tapered, the deposition of an organic EL material from above and not an oblique direction is made possible. That is, the organic EL material is deposited from above so that it is uniformly adhered to an opening between adjacent cathode separators, thereby making it possible to secure sufficient brightness for a display device. When a cathode material is deposited from above, it can be prevented from being adhered to a lower portion of the inversely tapered shape, thereby making it possible to ensure insulation between cathodes.
- The amount of a volatile component generated from the cathode separator of the present invention by heating at 25 to 200° C. is preferably 10 wt % or less, more preferably 5 wt % or less, much more preferably 2 wt % or less, particularly preferably 1 wt % or less.
- By reducing the amount of the volatile component to the above range, the intrusion of impurities into the EL layer can be prevented, thereby making it possible to eliminate the occurrence of a lighting failure of the EL display device and a reduction in the brightness of emission.
- The amount of the volatile component can be evaluated by TDS (Thermal Desorption Spectroscopy) measurement or the like.
- Production of Organic EL Display Device
- The organic EL display device of the present invention comprises cathode separators formed as described above. The organic EL display device of the present invention is produced as follows, for example.
- A transparent electrode such as ITO is formed on a glass substrate by sputtering, and a positive photoresist is applied to the transparent electrode and prebaked. The resist is exposed through a mask and developed to form a resist pattern, the ITO film is etched by a hydrochloric acid-based etchant such as ferric chloride, and the resist film is removed to obtain a transparent electrode pattern, for example, a striped pattern. Thereafter, the radiation sensitive resin composition of the present invention is applied to the surface of the substrate having the transparent electrode pattern to form inversely tapered cathode separators as described above. Subsequently, a hole transfer layer, organic EL layer and cathode layer are formed by vapor deposition sequentially. The hole transfer layer is made from a phthalocyanine-based material such as CuPc or H2Pc, or an aromatic amine. The organic EL material is prepared by doping a base material such as Alq3 or BeBq3 with quinacridone or coumarin. The cathode material is, for example, Mg—Al, Al—Li, Al—Li2O or Al—LiF.
- An organic EL display device is then produced by sealing a hollow-structured stainless steel can and the above substrate with a sealing material such as an epoxy resin and assembling them into a module.
- The following synthetic examples, examples and comparative examples are provided for the purpose of further illustrating the present invention but are in no way to be taken as limiting.
- 176 g (0.1 mol) of t-butoxystyrene and 5.8 g (0.04 mol) of azobisbutyronitrile were placed in a flask equipped with a cooling tube, stirrer and thermometer, and 250 ml of propylene glycol monomethyl ether was added and dissolved to carry out polymerization at 75° C. for 4 hours. 50 g of a 5 wt % aqueous sulfuric acid solution was mixed with the obtained poly t-butoxystyrene solution to carry out a hydrolytic reaction at 100° C. for 3 hours. The reaction product was then washed with 1,000 ml of deionized water three times, and 500 ml of propylene glycol monomethyl ether acetate was added to carry out solvent substitution to obtain a solution containing an alkali soluble resin (A-1) (polyhydroxystyrene) having an Mw of 24,000.
- 57 g (0.6 mol) of meta-cresol, 38 g (0.4 mol) of para-cresol, 75.5 g (0.93 mol of formaldehyde) of a 37 wt % formaldehyde aqueous solution, 0.63 g (0.005 mol) of oxalic dianhydride and 264 g of methylisobutyl ketone were charged into a flask equipped with a cooling tube, stirrer and thermometer, and the flask was immersed in an oil bath to carry out polycondensation for 4 hours under agitation while the reaction solution was refluxed. After the temperature of the oil bath was raised to 150° C. over 3 hours, the inside pressure of the flask was reduced to 30 to 50 mmHg to remove a volatile component and the molten resin A was recovered by cooling to room temperature. This resin was dissolved in ethyl acetate to a resin content of 30%, and methanol and water were added in amounts 1.3 times and 0.9 time the weight of the solution, respectively, stirred and left. Then, a lower layer out of two separated layers was taken out, concentrated and dried to obtain an alkali soluble resin (A-2) (novolak resin) having a Mw of 8,000.
- 5 parts by weight of 2,2′-azobis(2,4-dimethylvaleronitrile) and 200 parts by weight of diethylene glycol ethyl methyl ether were charged into a flask equipped with a cooling tube and stirrer. Subsequently, 25 parts by weight of styrene, 40 parts by weight of methacrylic acid and 30 parts by weight of tricycyclo[5.2.1.02.6]decan-8-yl methacrylate were added, the inside of the flask was substituted by nitrogen, and 5 parts by weight of 1,3-butadiene was added and stirred gently. The temperature of the resulting solution was raised to 70° C. and maintained at that temperature for 4 hours to obtain a polymer solution containing an alkali soluble resin (A-3) having a Mw of 12,000. The solid content of the obtained polymer solution was 33.5%.
- 7 parts by weight of 2,2′-azobis(2,4-dimethylvaleronitrile) and 200 parts by weight of diethylene glycol ethyl methyl ether were charged into a flask equipped with a cooling tube and stirrer. Subsequently, 10 parts by weight of styrene, 20 parts by weight of methacrylic acid, 45 parts by weight of glycidyl methacrylate and 25 parts by weight of tricycyclo[5.2.1.02.6]decan-8-yl methacrylate were added, the inside of the flask was substituted by nitrogen, and the resulting solution was stirred gently. The temperature of the resulting solution was raised to 70° C. and maintained at that temperature for 5 hours to obtain a polymer solution containing an alkali soluble resin (A-4) having a Mw of 10,000. The solid content of the obtained polymer solution was 33.5%.
- Preparation of Radiation Sensitive Resin Composition
- The solution (corresponding to 100 parts by weight (solid content) of the resin (A-1)) containing the alkali soluble resin (A-1) obtained in Synthesis Example 1, 20 parts by weight of Cymel 300 (of Mitsui Cyanamid Co., Ltd.) as the component (B), 0.2 part by weight of 2-(4-methoxy-β-styryl)-4,6-bis(trichloromethyl)-s-triazine as the component (C), 10 parts by weight of Epicoat 152 as a compound containing two or more epoxy groups in the molecule (of Yuka Shell Epoxy Co., Ltd.) and 0.04 part by weight of Megafac F172 (of Dainippon Ink & Chemicals, Inc) as a surfactant were mixed together and dissolved in ethyl 3-ethoxypropionate to a solid content of 35 wt %, and the resulting solution was filtered with a Millipore filter having a pore diameter of 0.5 μm to prepare a radiation sensitive resin composition solution (S-1).
- (I) Formation of Cathode Separators
- The above composition solution (S-1) was applied to the surface of a glass substrate by a spinner and prebaked on a hot plate at 110° C. for 3 minutes to form a 5 μm thick coating film.
- The above obtained coating film was exposed to ultraviolet radiation having an intensity of 10 mW/cm2 at 365 nm through a pattern mask having 10 μm×10 μm openings for 10 seconds. This exposure was carried out in an oxygen atmosphere (in the air). Thereafter, this exposed coating film was developed with a 2.38 wt % aqueous solution of tetramethylammonium hydroxide at 25° C. for 90 seconds and washed with running pure water for 1 minutes. The formed cathode separators were heated in an oven at 220° C. for 60 minutes to be cured to obtain 4.5 μm thick cathode separators.
- (II) Evaluation of Shape of Cathode Separator
- The upper tapered angle of the sectional shape of the cathode separator obtained in (I) above (angle formed by a straight line connecting the upper pattern edge and the lower pattern edge and the top side of the trapezoidal cross section) is shown in Table 1. When this angle is 20 to 80°, it can be said that the cathode separator is satisfactory. When a cathode separator has a normally tapered cross section with an angle larger than 80°, or is rectangular with an angle of 90° or more, the cathode separator is not accepted.
- (III) Evaluation of Heat Resistance
- The cathode separators formed in (I) above were heated in an oven at 250° C. for 60 minutes. The dimensional change rate of film thickness is shown in Table 1. When the dimensional change rate before and after heating is within ±5%, it can be said that heat resistant dimensional stability is satisfactory.
- (IV) Evaluation of Volatile Component
- The observation of a volatile component of the cathode separators obtained in (I) above was evaluated by TDS measurement (EMD-WA1000S of Denshi Kagaku Co., Ltd.). The measurement was carried out from 25° C. to 200° C. at a temperature elevation rate of 1° C./s. The results are shown in Table 1. As for the evaluation results, the amount of the volatile component generated is expressed by wt % by changing the cathode separator material to a substrate size of 10 mm×10 mm×4.5 μm.
- A composition solution (S-2) was prepared and evaluated in the same manner as in Example 1 except that 100 parts by weight of the alkali soluble resin (A-2) was used as the component (A). The results are shown in Table 1.
- A composition solution (S-3) was prepared and evaluated in the same manner as in Example 1 except that the solution containing an alkali soluble resin (A-3) (corresponding to 100 parts by weight (solid content) of the resin (A-3)) was used as the component (A). The results are shown in Table 1.
- A composition solution (S-4) was prepared and evaluated in the same manner as in Example 1 except that the solution containing an alkali soluble resin (A-4) (corresponding to 100 parts by weight (solid content) of the resin (A-4)) was used as the component (A). The results are shown in Table 1.
- A composition solution (S-5) was prepared and evaluated in the same manner as in Example 1 except that a mixture of the solution containing an alkali soluble resin (A-1) (corresponding to 80 parts by weight (solid content) of the resin (A-1)) and 20 parts by weight of bisphenol A were used as the component (A). The results are shown in Table 1.
- A composition solution (S-6) was prepared and evaluated in the same manner as in Example 1 except that a mixture of 80 parts by weight of the alkali soluble resin (A-2) and 20 parts by weight of bisphenol A was used as the component (A). The results are shown in Table 1.
- A composition solution (S-7) was prepared and evaluated in the same manner as in Example 1 except that 2 parts by weight of 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadien-3,5-dione was added as an ultraviolet light absorber. The results are shown in Table 1.
- A composition solution (S-8) was prepared and evaluated in the same manner as in Example 2 except that 2 parts by weight of 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadien-3,5-dione was added as an ultraviolet light absorber. The results are shown in Table 1.
- A composition solution (S-9) was prepared and evaluated in the same manner as in Example 1 except that 20 parts by weight of Cymel 1174 (of Mitsui Cyanamid Co., Ltd.) was used as the component (B) instead of 20 parts by weight of Cymel 300. The results are shown in Table 1.
TABLE 1 tapered heat resistance volatile component angle (%) (%) Ex. 1 55 −4 1.3 Ex. 2 50 −5 1.6 Ex. 3 50 −3 0.9 Ex. 4 50 −4 0.8 Ex. 5 45 −4 1.3 Ex. 6 45 −5 1.6 Ex. 7 35 −4 1.3 Ex. 8 35 −5 1.6 Ex. 9 50 −5 2.0
Ex.: Example
- As described above, according to the present invention, there is provided a radiation sensitive resin composition which is capable of easily forming cathode separators having excellent performance such as an inversely tapered shape, heat resistance and low volatility.
- Highly reliable cathode separators are obtained from the above radiation sensitive resin composition.
Claims (3)
1-6. (canceled)
7. A cathode separator for EL display devices formed from a radiation sensitive composition comprising:
(A)nZ+Y− (VI)
(A) an alkali soluble resin;
(B) at least one compound selected from the group consisting of a compound represented by the following formula (I):
wherein six Rs may be the same or different and each a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,
a compound represented by the following formula (II):
wherein Rs are defined as above,
a compound represented by the following formula (III):
wherein Rs are defined as above,
and a compound represented by the following formula (IV):
wherein Rs are defined as above;
(C) a trihalomethyltriazine represented by the following formula (V):
wherein X is a halogen atom and A is a CX3 or a group represented by the following formula:
B, D and E are each independently a hydrogen atom, alkyl group, aryl group, alkoxy group, aryloxy group, thioalkyl group or thioaryl group having 1 to 10 carbon atoms, halogen atom, cyano group, nitro group, secondary amino group having an alkyl group with 1 to 10 carbon atoms, carboxyl group, hydroxyl group, ketoalkyl group or ketoaryl group having 1 to 10 carbon atoms, or alkoxycarbonyl group or alkylcarbonyloxy group having 1 to 20 carbon atoms, and m is an integer of 1 to 5, or an onium salt which serves as an optically acid generating agent represented by the following formula (VI):
(A)nZ+Y− (VI)
wherein A is as defined hereinabove, Z is sulfur or iodine, Y is BF4, PF6, SbF6, AsF6, p-toluene sulfonate, trifluoromethane sulfonate or trifluoroacetate, and n is 2 or 3, and
(D) an ultraviolet light absorber selected from the group consisting of benzotriazoles, salicylates, substituted acrylonitriles, coumarins, flavones and chalcones,
wherein the cathode separator has a trapezoidal cross section with a top side longer than a bottom side and an angle formed by a straight line connecting an upper pattern edge and a lower pattern edge and the top side of 15 to 75°.
8. A cathode separator for EL display devices formed from a radiation sensitive composition comprising:
(A)nZ+Y− (VI)
(A) an alkali soluble resin;
(B) at least one compound selected from the group consisting of a compound represented by the following formula (I):
wherein six Rs may be the same or different and each a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,
a compound represented by the following formula (II):
wherein Rs are defined as above,
a compound represented by the following formula (III):
wherein Rs are defined as above,
and a compound represented by the following formula (IV):
wherein Rs are defined as above;
(C) a trihalomethyltriazine represented by the following formula (V):
wherein X is a halogen atom and A is a CX3 or a group represented by the following formula:
B, D and E are each independently a hydrogen atom, alkyl group, aryl group, alkoxy group, aryloxy group, thioalkyl group or thioaryl group having 1 to 10 carbon atoms, halogen atom, cyano group, nitro group, secondary amino group having an alkyl group with 1 to 10 carbon atoms, carboxyl group, hydroxyl group, ketoalkyl group or ketoaryl group having 1 to 10 carbon atoms, or alkoxycarbonyl group or alkylcarbonyloxy group having 1 to 20 carbon atoms, and m is an integer of 1 to 5, or an onium salt which serves as an optically acid generating agent represented by the following formula (VI):
(A)nZ+Y− (VI)
wherein A is as defined hereinabove, Z is sulfur or iodine, Y is BF4, PF6, SbF6, AsF6, p-toluene sulfonate, trifluoromethane sulfonate or trifluoroacetate, and n is 2 or 3, and
(D) an ultraviolet light absorber selected from the group consisting of 2-(2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl)-2H-benzotriazole, hydroxyphenylbenzotriazole derivative, condensate between methyl-3-(3-t-butyl-5-(2H-benzotriazol-2-yl)-4-hydroxyphenyl)propionate and polyethylene glycol having a molecular weight of 300, and dibenzylideneacetone,
wherein the cathode separator has a trapezoidal cross section with a top side longer than a bottom side and an angle formed by a straight line connecting an upper pattern edge and a lower pattern edge and the top side of 15 to 75°.
Priority Applications (1)
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US11/154,579 US20050260526A1 (en) | 2000-09-08 | 2005-06-17 | Radiation sensitive resin composition, cathode separator and EL display device |
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JP2000273213A JP4042142B2 (en) | 2000-09-08 | 2000-09-08 | Radiation-sensitive resin composition for forming partition of EL display element, partition and EL display element |
JP2000-273213 | 2000-09-08 | ||
US09/946,359 US6994944B2 (en) | 2000-09-08 | 2001-09-06 | Radiation sensitive resin composition, cathode separator and EL display device |
US11/154,579 US20050260526A1 (en) | 2000-09-08 | 2005-06-17 | Radiation sensitive resin composition, cathode separator and EL display device |
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US09/946,359 Continuation US6994944B2 (en) | 2000-09-08 | 2001-09-06 | Radiation sensitive resin composition, cathode separator and EL display device |
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US11/154,579 Abandoned US20050260526A1 (en) | 2000-09-08 | 2005-06-17 | Radiation sensitive resin composition, cathode separator and EL display device |
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US (2) | US6994944B2 (en) |
EP (1) | EP1193557A1 (en) |
JP (1) | JP4042142B2 (en) |
KR (1) | KR100799052B1 (en) |
TW (1) | TWI249079B (en) |
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JP4042142B2 (en) * | 2000-09-08 | 2008-02-06 | Jsr株式会社 | Radiation-sensitive resin composition for forming partition of EL display element, partition and EL display element |
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Also Published As
Publication number | Publication date |
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KR20020020253A (en) | 2002-03-14 |
TWI249079B (en) | 2006-02-11 |
EP1193557A1 (en) | 2002-04-03 |
US6994944B2 (en) | 2006-02-07 |
JP4042142B2 (en) | 2008-02-06 |
US20020055059A1 (en) | 2002-05-09 |
KR100799052B1 (en) | 2008-01-29 |
JP2002083687A (en) | 2002-03-22 |
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