US20050109369A1 - Method to use a laser to perform the edge clean operation on a semiconductor wafer - Google Patents
Method to use a laser to perform the edge clean operation on a semiconductor wafer Download PDFInfo
- Publication number
- US20050109369A1 US20050109369A1 US11/014,476 US1447604A US2005109369A1 US 20050109369 A1 US20050109369 A1 US 20050109369A1 US 1447604 A US1447604 A US 1447604A US 2005109369 A1 US2005109369 A1 US 2005109369A1
- Authority
- US
- United States
- Prior art keywords
- wafer
- edge
- laser
- laser beam
- clean operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
- The present invention relates to a method of performing the edge clean operation on semiconductor wafers. More specifically, the present invention relates to a method of using a laser to perform the edge clean operation on semiconductor wafers.
- One of the major problems gaining attention in wafer processing today is the edge related defects. Edge related defects contribute to lower die yield and lost revenue. A typical type of edge defect is the peeling of edge films due to poor adhesion to underlying layers.
- Many processing schemes have been devised and implemented to reduce edge related defects. The majority of processing schemes involve costly photo masking and etching steps in an attempt to reduce or eliminate the defects. The wafer is coated with photo resist and run through an edge bead removal step. The wafer is then etched in a plasma etcher to remove the films on the edge of the wafer. The resist is then stripped off in both a dry and then wet process. The wafer is then sent on for subsequent processing.
- The disadvantage associated with these existing solutions is that the wafers have to run through additional processing steps that can add both high cost and long cycle times.
- Therefore, an improved method for performing the edge clean operation on a semiconductor wafer is needed. The present invention provides such a method for performing the edge clean operation on a semiconductor wafer. Features and advantages of the present invention will become apparent upon a reading of the attached specification, in combination with a study of the drawings.
- A primary object of an embodiment of the invention is to provide a method of using a laser to perform the edge clean operation on a semiconductor wafer.
- An object of an embodiment of the invention is to provide a significant reduction in process steps necessary to accomplish the edge cleaning process on a semiconductor wafer.
- An object of an embodiment of the invention is to provide for the elimination of the need for a very expensive resist coating track, photolithe stepper, plasma etcher, resist asher and solvent resist strip such that a significant reduction in capital equipment costs and a decrease in wafer cycle time are achieved.
- Another object of an embodiment of the invention is to provide the capability to control the laser power and incidence angle to enable selective cleaning down to any desired layer by adjusting laser power.
- Another object of an embodiment of the invention is to provide semiconductor wafers having their edges cleaned by the method of using a laser with a clean boundary between the clean and non-cleaned areas.
- Briefly, and in accordance with at least one of the foregoing, an embodiment of the present invention provides a method for performing the edge clean operation on a semiconductor wafer. Specifically, a laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, such as in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is carried out in an exhausted chamber. Preferably, there is accurate wafer concentricity and laser alignment to the wafer edge. Preferably, an accurate form of wafer to chuck alignment system is used. This can be insured by use of a co-axial closed-loop video monitoring system that monitors both the edge of the wafer and the point of contact by the laser.
- The features of the present invention which are believed to be novel, are described in detail herein below. The organization and manner of the structure and operation of the invention, together with further objects and advantages thereof, may best be understood by reference to the following description taken in connection with the accompanying drawings wherein like reference numerals identify like elements in which:
-
FIG. 1 is a flow chart illustrating a method of performing an edge clean process of a semiconductor wafer in accordance with an embodiment of the present invention; and -
FIG. 2 is a side-elevational view of the system used for performing the method illustrated inFIG. 1 . - While this invention may be susceptible to embodiment in different forms, there is shown in the drawings and will be described herein in detail, a specific embodiment with the understanding that the present disclosure is to be considered an exemplification of the principles of the invention, and is not intended to limit the invention to that as illustrated and described herein.
- The present invention provides a
method 100 of performing an edge clean operation on asemiconductor wafer 20, which is illustrated inFIG. 1 . Thesystem 15 used for performing themethod 100 is illustrated inFIG. 2 . - As illustrated in
FIG. 2 , thesystem 15 used for performing themethod 100 includes thewafer 20 having anedge 25.Film 30 is attached to atop surface 35 of thewafer 20. Thesystem 15 further includes achuck 40, alaser 45 having anozzle 50, and avideo monitoring system 55. Thelaser 45 is capable of emitting alaser beam 60 through thenozzle 50. Aninert purge gas 65 is also emitted through thenozzle 50 of thelaser 45. Thevideo monitoring system 55 is preferably a co-axial closed-loop video monitoring system. Thelaser 45 is configured to emitlaser beams 60 of variable power. The system is provided within anexhausted chamber 70, although thevideo monitoring system 55 does not necessarily have to be provided within theexhausted chamber 70. - The
method 100 of the present invention will now be discussed with reference toFIG. 1 . Thefirst step 110 of themethod 100 is to clamp thewafer 20 to thechuck 40 such that thetop surface 35, and thus thefilm 30 on thetop surface 35 of thewafer 20, are not positioned on thechuck 40. Thewafer 20 is preferably clamped concentrically to thechuck 40. - The
second step 120 of themethod 100 is to rotate thechuck 40, with thewafer 20 clamped thereto, at a selectable speed. The selectable speed of the rotation of thechuck 40, with thewafer 20 clamped thereto, is preferably between ten revolutions per minute (10 rpm) and one-thousand revolutions per minute (1,000 rpm). - The
third step 130 of themethod 100 is to direct thelaser beam 60 at an oblique angle through thenozzle 50 of thelaser 45 to theedge 25 of thewafer 20. - The
fourth step 140 of themethod 100 is to remove unwanted deposits, such as thefilm 30 on thetop surface 35 of thewafer 20, at theedge 25 of thewafer 20 with thelaser beam 60. Thus, as illustrated inFIG. 2 , thetop surface 35 of thewafer 20 proximate to theedge 25 thereof is clean of unwanted deposits, such as thefilm 30. - The
fifth step 150 of themethod 100 is to blow away the removedunwanted deposits 30 from thewafer 20 with aninert purge gas 65 which is passed through thenozzle 50 of thelaser 45. Theinert purge gas 65 is preferably passed through thenozzle 50 of thelaser 45 at the same time thelaser beam 60 is removingunwanted deposits 30 from thetop surface 35 of thewafer 20 in thefourth step 140. Because theinert purge gas 65 blows away the removedunwanted deposits 30 from thewafer 20, slag build up on other parts of thewafer 20 is prevented. - The
method 100 is preferably performed in theexhausted chamber 70. Preferably, there is accurate concentricity of thewafer 20 and alignment of thelaser 45 with theedge 25 of thewafer 20. Preferably, an accurate form ofwafer 20 to chuck 40 alignment system is used. This can be insured by the use of the co-axial closed loopvideo monitoring system 55 that monitors both theedge 25 of thewafer 20 and the point of contact by thelaser beam 60. - It should be understood that the sequence of
steps method 100 is only the preferred sequence of operation of thesteps certain steps other steps other steps third step 130 could be performed prior to, or simultaneously with thesecond step 120. Likewise, the fourth andfifth steps - The
system 15 andmethod 100 provide a number of advantages in cleaning theedge 25 of awafer 20 in comparison to those of the prior art. Thesystem 15 andmethod 100 provide a significant reduction in process steps necessary to accomplish the edge cleaning process. Thesystem 15 and themethod 100 eliminate the need for a very expensive resist coating track, photlithe stepper, resist asher, and solvent resist strip, such that a significant reduction in capital equipment costs and a decrease in wafer cycle time are achieved. An additional advantage of thesystem 15 and themethod 100 is the capability to control the power of thelaser 45 and the incidence angle to enable selective cleaning down to an desired layer by adjusting the power of thelaser 45. Further, the edge clean accomplished by this method leaves a clean boundary between clean and non-cleaned area. - While a preferred embodiment of the present invention is shown and described, it is envisioned that those skilled in the art may devise various modifications of the present invention without departing from the spirit and scope of the appended claims.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/014,476 US20050109369A1 (en) | 2003-02-07 | 2004-12-16 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/360,903 US6874510B2 (en) | 2003-02-07 | 2003-02-07 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
US11/014,476 US20050109369A1 (en) | 2003-02-07 | 2004-12-16 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/360,903 Division US6874510B2 (en) | 2003-02-07 | 2003-02-07 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
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US20050109369A1 true US20050109369A1 (en) | 2005-05-26 |
Family
ID=32824083
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/360,903 Expired - Fee Related US6874510B2 (en) | 2003-02-07 | 2003-02-07 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
US11/014,476 Abandoned US20050109369A1 (en) | 2003-02-07 | 2004-12-16 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US10/360,903 Expired - Fee Related US6874510B2 (en) | 2003-02-07 | 2003-02-07 | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006125413A1 (en) * | 2005-05-27 | 2006-11-30 | Emag Laser Tec Gmbh | Method and device for treating workpiece surfaces by means of laser beams |
US20070123061A1 (en) * | 2005-11-25 | 2007-05-31 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
US20090246105A1 (en) * | 2008-03-25 | 2009-10-01 | Applied Materials, Inc. | Methods and apparatus for conserving electronic device manufacturing resources |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7799166B2 (en) * | 2004-09-20 | 2010-09-21 | Lsi Corporation | Wafer edge expose alignment method |
DE102005034627A1 (en) * | 2005-07-19 | 2007-02-01 | Takata-Petri Ag | Apparatus and method for removing an elongated ridge on a molding |
US7993464B2 (en) | 2007-08-09 | 2011-08-09 | Rave, Llc | Apparatus and method for indirect surface cleaning |
US11311917B2 (en) | 2007-08-09 | 2022-04-26 | Bruker Nano, Inc. | Apparatus and method for contamination identification |
US20090107519A1 (en) * | 2007-10-30 | 2009-04-30 | Sokudo Co., Ltd. | Method and system for chemically enhanced laser trimming of substrate edges |
EP2228685B1 (en) * | 2009-03-13 | 2018-06-27 | ASML Netherlands B.V. | Level sensor arrangement for lithographic apparatus and device manufacturing method |
US8334162B2 (en) * | 2009-09-22 | 2012-12-18 | First Solar, Inc | System and method for tracking and removing coating from an edge of a substrate |
US8658937B2 (en) | 2010-01-08 | 2014-02-25 | Uvtech Systems, Inc. | Method and apparatus for processing substrate edges |
US8183500B2 (en) * | 2010-12-03 | 2012-05-22 | Uvtech Systems, Inc. | Orthogonal beam delivery system for wafer edge processing |
KR101557586B1 (en) | 2014-05-19 | 2015-10-05 | 주식회사 아이엠티 | Method and apparatus for wafer edge cleaning |
US9908201B2 (en) * | 2014-04-22 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for edge bead removal |
DE112015002860T5 (en) * | 2014-06-19 | 2017-02-23 | Magna International Inc. | Method and apparatus for laser assisted power cleaning |
JP6560828B2 (en) | 2015-12-23 | 2019-08-14 | エーエスエムエル ネザーランズ ビー.ブイ. | Method for removing photosensitive material on a substrate |
CN112251802B (en) * | 2020-09-15 | 2022-01-25 | 深圳市裕展精密科技有限公司 | Deplating method and deplating apparatus |
CN113083800A (en) * | 2021-03-31 | 2021-07-09 | 东莞市晏勤激光实业有限公司 | Equipment and method for cleaning aluminum plate by using pulse laser |
CN116263515A (en) * | 2021-12-14 | 2023-06-16 | 盛美半导体设备(上海)股份有限公司 | Electroplating cavity plating leakage early warning method and system |
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2003
- 2003-02-07 US US10/360,903 patent/US6874510B2/en not_active Expired - Fee Related
-
2004
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WO2006125413A1 (en) * | 2005-05-27 | 2006-11-30 | Emag Laser Tec Gmbh | Method and device for treating workpiece surfaces by means of laser beams |
US20070123061A1 (en) * | 2005-11-25 | 2007-05-31 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
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Also Published As
Publication number | Publication date |
---|---|
US6874510B2 (en) | 2005-04-05 |
US20040154638A1 (en) | 2004-08-12 |
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