US20050109369A1 - Method to use a laser to perform the edge clean operation on a semiconductor wafer - Google Patents

Method to use a laser to perform the edge clean operation on a semiconductor wafer Download PDF

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Publication number
US20050109369A1
US20050109369A1 US11014476 US1447604A US2005109369A1 US 20050109369 A1 US20050109369 A1 US 20050109369A1 US 11014476 US11014476 US 11014476 US 1447604 A US1447604 A US 1447604A US 2005109369 A1 US2005109369 A1 US 2005109369A1
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Patent type
Prior art keywords
wafer
edge
method
laser
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11014476
Inventor
Steven Reder
Michael Berman
Rennie Barber
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Bell Semiconductor LLC
LSI Corp
Original Assignee
LSI Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • H01L21/02087Cleaning of wafer edges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to a method of performing the edge clean operation on semiconductor wafers. More specifically, the present invention relates to a method of using a laser to perform the edge clean operation on semiconductor wafers.
  • One of the major problems gaining attention in wafer processing today is the edge related defects. Edge related defects contribute to lower die yield and lost revenue. A typical type of edge defect is the peeling of edge films due to poor adhesion to underlying layers.
  • Many processing schemes have been devised and implemented to reduce edge related defects. The majority of processing schemes involve costly photo masking and etching steps in an attempt to reduce or eliminate the defects. The wafer is coated with photo resist and run through an edge bead removal step. The wafer is then etched in a plasma etcher to remove the films on the edge of the wafer. The resist is then stripped off in both a dry and then wet process. The wafer is then sent on for subsequent processing.
  • The disadvantage associated with these existing solutions is that the wafers have to run through additional processing steps that can add both high cost and long cycle times.
  • Therefore, an improved method for performing the edge clean operation on a semiconductor wafer is needed. The present invention provides such a method for performing the edge clean operation on a semiconductor wafer. Features and advantages of the present invention will become apparent upon a reading of the attached specification, in combination with a study of the drawings.
  • OBJECTS AND SUMMARY OF THE INVENTION
  • A primary object of an embodiment of the invention is to provide a method of using a laser to perform the edge clean operation on a semiconductor wafer.
  • An object of an embodiment of the invention is to provide a significant reduction in process steps necessary to accomplish the edge cleaning process on a semiconductor wafer.
  • An object of an embodiment of the invention is to provide for the elimination of the need for a very expensive resist coating track, photolithe stepper, plasma etcher, resist asher and solvent resist strip such that a significant reduction in capital equipment costs and a decrease in wafer cycle time are achieved.
  • Another object of an embodiment of the invention is to provide the capability to control the laser power and incidence angle to enable selective cleaning down to any desired layer by adjusting laser power.
  • Another object of an embodiment of the invention is to provide semiconductor wafers having their edges cleaned by the method of using a laser with a clean boundary between the clean and non-cleaned areas.
  • Briefly, and in accordance with at least one of the foregoing, an embodiment of the present invention provides a method for performing the edge clean operation on a semiconductor wafer. Specifically, a laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, such as in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is carried out in an exhausted chamber. Preferably, there is accurate wafer concentricity and laser alignment to the wafer edge. Preferably, an accurate form of wafer to chuck alignment system is used. This can be insured by use of a co-axial closed-loop video monitoring system that monitors both the edge of the wafer and the point of contact by the laser.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The features of the present invention which are believed to be novel, are described in detail herein below. The organization and manner of the structure and operation of the invention, together with further objects and advantages thereof, may best be understood by reference to the following description taken in connection with the accompanying drawings wherein like reference numerals identify like elements in which:
  • FIG. 1 is a flow chart illustrating a method of performing an edge clean process of a semiconductor wafer in accordance with an embodiment of the present invention; and
  • FIG. 2 is a side-elevational view of the system used for performing the method illustrated in FIG. 1.
  • DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENT
  • While this invention may be susceptible to embodiment in different forms, there is shown in the drawings and will be described herein in detail, a specific embodiment with the understanding that the present disclosure is to be considered an exemplification of the principles of the invention, and is not intended to limit the invention to that as illustrated and described herein.
  • The present invention provides a method 100 of performing an edge clean operation on a semiconductor wafer 20, which is illustrated in FIG. 1. The system 15 used for performing the method 100 is illustrated in FIG. 2.
  • As illustrated in FIG. 2, the system 15 used for performing the method 100 includes the wafer 20 having an edge 25. Film 30 is attached to a top surface 35 of the wafer 20. The system 15 further includes a chuck 40, a laser 45 having a nozzle 50, and a video monitoring system 55. The laser 45 is capable of emitting a laser beam 60 through the nozzle 50. An inert purge gas 65 is also emitted through the nozzle 50 of the laser 45. The video monitoring system 55 is preferably a co-axial closed-loop video monitoring system. The laser 45 is configured to emit laser beams 60 of variable power. The system is provided within an exhausted chamber 70, although the video monitoring system 55 does not necessarily have to be provided within the exhausted chamber 70.
  • The method 100 of the present invention will now be discussed with reference to FIG. 1. The first step 110 of the method 100 is to clamp the wafer 20 to the chuck 40 such that the top surface 35, and thus the film 30 on the top surface 35 of the wafer 20, are not positioned on the chuck 40. The wafer 20 is preferably clamped concentrically to the chuck 40.
  • The second step 120 of the method 100 is to rotate the chuck 40, with the wafer 20 clamped thereto, at a selectable speed. The selectable speed of the rotation of the chuck 40, with the wafer 20 clamped thereto, is preferably between ten revolutions per minute (10 rpm) and one-thousand revolutions per minute (1,000 rpm).
  • The third step 130 of the method 100 is to direct the laser beam 60 at an oblique angle through the nozzle 50 of the laser 45 to the edge 25 of the wafer 20.
  • The fourth step 140 of the method 100 is to remove unwanted deposits, such as the film 30 on the top surface 35 of the wafer 20, at the edge 25 of the wafer 20 with the laser beam 60. Thus, as illustrated in FIG. 2, the top surface 35 of the wafer 20 proximate to the edge 25 thereof is clean of unwanted deposits, such as the film 30.
  • The fifth step 150 of the method 100 is to blow away the removed unwanted deposits 30 from the wafer 20 with an inert purge gas 65 which is passed through the nozzle 50 of the laser 45. The inert purge gas 65 is preferably passed through the nozzle 50 of the laser 45 at the same time the laser beam 60 is removing unwanted deposits 30 from the top surface 35 of the wafer 20 in the fourth step 140. Because the inert purge gas 65 blows away the removed unwanted deposits 30 from the wafer 20, slag build up on other parts of the wafer 20 is prevented.
  • The method 100 is preferably performed in the exhausted chamber 70. Preferably, there is accurate concentricity of the wafer 20 and alignment of the laser 45 with the edge 25 of the wafer 20. Preferably, an accurate form of wafer 20 to chuck 40 alignment system is used. This can be insured by the use of the co-axial closed loop video monitoring system 55 that monitors both the edge 25 of the wafer 20 and the point of contact by the laser beam 60.
  • It should be understood that the sequence of steps 110, 120, 130, 140, 150 described in the method 100 is only the preferred sequence of operation of the steps 110, 120, 130, 140, 150, such that certain steps 110, 120, 130, 140, 150 could be performed prior to other steps 110, 120, 130, 140, 150 or could be done simultaneously with other steps 110, 120, 130, 140, 150. For instance, the third step 130 could be performed prior to, or simultaneously with the second step 120. Likewise, the fourth and fifth steps 140, 150 could be performed simultaneously.
  • The system 15 and method 100 provide a number of advantages in cleaning the edge 25 of a wafer 20 in comparison to those of the prior art. The system 15 and method 100 provide a significant reduction in process steps necessary to accomplish the edge cleaning process. The system 15 and the method 100 eliminate the need for a very expensive resist coating track, photlithe stepper, resist asher, and solvent resist strip, such that a significant reduction in capital equipment costs and a decrease in wafer cycle time are achieved. An additional advantage of the system 15 and the method 100 is the capability to control the power of the laser 45 and the incidence angle to enable selective cleaning down to an desired layer by adjusting the power of the laser 45. Further, the edge clean accomplished by this method leaves a clean boundary between clean and non-cleaned area.
  • While a preferred embodiment of the present invention is shown and described, it is envisioned that those skilled in the art may devise various modifications of the present invention without departing from the spirit and scope of the appended claims.

Claims (4)

  1. 1. A system used for performing an edge clean operation on a wafer, the system comprising:
    a rotatable chuck which is configured to clamp the wafer thereon; and
    a laser capable of emitting both a laser beam and a gas therefrom for cleaning an edge of the wafer.
  2. 2. A system as defined in claim 1, further comprising a rotatable chuck which is configured to concentrically clamp the wafer thereon.
  3. 3. A system as defined in claim 1, further comprising a video monitoring system which monitors the edge of the wafer and a point of contact of the laser beam.
  4. 4. A system as defined in claim 1, further comprising an exhausted chamber, said chuck and said wafer being positioned within said exhausted chamber.
US11014476 2003-02-07 2004-12-16 Method to use a laser to perform the edge clean operation on a semiconductor wafer Abandoned US20050109369A1 (en)

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US10360903 US6874510B2 (en) 2003-02-07 2003-02-07 Method to use a laser to perform the edge clean operation on a semiconductor wafer
US11014476 US20050109369A1 (en) 2003-02-07 2004-12-16 Method to use a laser to perform the edge clean operation on a semiconductor wafer

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US11014476 US20050109369A1 (en) 2003-02-07 2004-12-16 Method to use a laser to perform the edge clean operation on a semiconductor wafer

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WO2006125413A1 (en) * 2005-05-27 2006-11-30 Emag Laser Tec Gmbh Method and device for treating workpiece surfaces by means of laser beams
US20070123061A1 (en) * 2005-11-25 2007-05-31 Advanced Laser Separation International B.V. Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
US20090246105A1 (en) * 2008-03-25 2009-10-01 Applied Materials, Inc. Methods and apparatus for conserving electronic device manufacturing resources

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US7799166B2 (en) * 2004-09-20 2010-09-21 Lsi Corporation Wafer edge expose alignment method
DE102005034627A1 (en) * 2005-07-19 2007-02-01 Takata-Petri Ag Device and method of an oblong burr on a molded part removal
US7993464B2 (en) 2007-08-09 2011-08-09 Rave, Llc Apparatus and method for indirect surface cleaning
US20090107519A1 (en) * 2007-10-30 2009-04-30 Sokudo Co., Ltd. Method and system for chemically enhanced laser trimming of substrate edges
EP2228685B1 (en) * 2009-03-13 2018-06-27 ASML Netherlands B.V. Level sensor arrangement for lithographic apparatus and device manufacturing method
CN102655949B (en) * 2009-09-22 2014-08-06 第一太阳能有限公司 System and method for tracking and removing coating from an edge of a substrate
US8658937B2 (en) 2010-01-08 2014-02-25 Uvtech Systems, Inc. Method and apparatus for processing substrate edges
US20110147350A1 (en) * 2010-12-03 2011-06-23 Uvtech Systems Inc. Modular apparatus for wafer edge processing
US9908201B2 (en) * 2014-04-22 2018-03-06 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for edge bead removal
KR101557586B1 (en) 2014-05-19 2015-10-05 주식회사 아이엠티 Method and apparatus for wafer edge cleaning
CN106413925A (en) * 2014-06-19 2017-02-15 麦格纳国际公司 Method and apparatus for laser assisted power washing

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US20070123061A1 (en) * 2005-11-25 2007-05-31 Advanced Laser Separation International B.V. Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
US7682937B2 (en) * 2005-11-25 2010-03-23 Advanced Laser Separation International B.V. Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
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Publication number Publication date Type
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US20040154638A1 (en) 2004-08-12 application

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