US20050098842A1 - Image sensor having micro-lenses with integrated color filter and method of making - Google Patents
Image sensor having micro-lenses with integrated color filter and method of making Download PDFInfo
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- US20050098842A1 US20050098842A1 US11/001,326 US132604A US2005098842A1 US 20050098842 A1 US20050098842 A1 US 20050098842A1 US 132604 A US132604 A US 132604A US 2005098842 A1 US2005098842 A1 US 2005098842A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Definitions
- the present invention relates to image sensors, and more particularly, towards an image sensor that has a combination micro-lens and color filter resulting in a short focal length.
- Image sensors are electronic integrated circuits that can be used to produce still or video images.
- Solid state image sensors can be either of the charge coupled device (CCD) type or the complimentary metal oxide semiconductor (CMOS) type. In either type of image sensor, a light gathering pixel is formed in a substrate and arranged in a two-dimensional array.
- Modern image sensors typically contain millions of pixels to provide a high-resolution image.
- An important part of the image sensor are the color filters and micro-lens structures formed atop of the pixels.
- the color filters are operative, in conjunction with signal processing, to provide a color image. Examples of color filter technology are shown in U.S. Pat. No. 6,297,071 and U.S. Pat. No. 6,274,917 (and the references cited therein).
- the micro-lenses serve to focus the incident light onto the pixels, and thus to improve the fill factor of each pixel.
- FIG. 1 shows a prior art cross-sectional simplified diagram of an image sensor 101 having micro-lenses formed thereon.
- the image sensor includes a plurality of pixels that have light detecting elements 103 formed in the substrate.
- the light detecting elements 103 may be one of several types, such as a photodiode, a photogate, or other solid state light sensitive element.
- micro-lens 105 Formed atop of each pixel is a micro-lens 105 .
- the micro-lens 105 focuses incident light onto the light detecting elements 103 .
- the combination of the convex micro-lens and the color filter layer provides a total thickness that would normally require a micro-lens with a relatively long focal length, which can be difficult to manufacture at higher integration densities. Further, the process of forming the micro-lens and the color filter includes many process steps.
- FIG. 1 is a prior art cross sectional view of a portion of an image sensor.
- FIG. 2 is a top view of an image sensor showing pixels arranged in a two-dimensional array and with micro-lenses formed thereon.
- FIGS. 3-7 are cross sectional views of a semiconductor substrate illustrating one method for forming the apparatus of the present invention.
- the present invention relates to a combination micro-lens and color filter structure for use with image sensors, either of the CMOS or CCD type.
- image sensors either of the CMOS or CCD type.
- numerous specific details are provided to provide a thorough understanding of the embodiments of the invention.
- One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details, or with other methods, components, etc.
- well-known structures or operations are not shown or described in detail to avoid obscuring aspects of various embodiments of the invention.
- FIG. 2 shows a top view of an image sensor 201 formed in accordance with the present invention.
- the image sensor 201 includes a plurality of pixels 203 typically arranged in a two dimensional array.
- the image sensor shows a three by three array of pixels 203 , though it can be appreciated that an actual mage sensor 201 would have many more pixels, arranged in perhaps over a thousand rows and/or a thousand columns.
- FIG. 2 shows the pixels in ordered columns and rows, the pixels may be arranged in any type of ordered arrangement. For example, alternating rows may have their pixels slightly offset from each other laterally in a checkerboard format.
- the pixels 203 typically include a light sensitive element, such as a photodiode or a photogate as two examples. However, it can be appreciated that other types of light sensitive elements, now known or developed in the future, may be used. Further, the pixels 203 will also include amplification and/or readout circuitry. For clarity, this circuitry is not shown in FIG. 2 . In one embodiment, the pixels 203 may be active pixels, commonly known in the prior art. Formed atop of each pixel 203 is a combination micro-lens/color filter 205 .
- FIGS. 3-7 show in greater detail the formation and structure of the combination micro-lens/color filter 205 of the present invention.
- FIG. 3 is a cross-sectional view taken along line A-A of FIG. 2 .
- a semiconductor substrate 301 has a plurality of light sensitive elements 303 (associated with the pixels 203 of FIG. 2 ) formed therein.
- FIG. 3 shows the light sensitive element 303 as a photodiode, though other substitutes and equivalents may be used. Details of forming the photodiode and other associated circuitry are known in the prior art and will not be repeated herein to avoid obscuring the present invention. However, examples of the prior art may be seen in U.S. Pat. No. 5,904,493 and U.S. Pat. No. 6,320,617.
- the micro-lens/color filter 205 is a color filter that is formed into the shape of a micro-lens. In such a manner, by combining the color filter and the micro-lens into a single integrated structure, the combined thickness is lowered. Other advantages of this combined structure, as one example manufacturing ease and cost, are gained. Further, after formed atop of the micro-lens/color filter 205 is a passivation layer 307 . The passivation layer 307 protects the micro-lens/color filter 205 from damage.
- a planar color filter layer 401 is deposited over the substrate 301 and light sensitive elements 303 . It should be noted that while in this particular embodiment, the color filter layer 401 is formed directly over the substrate 301 , in other embodiments, the color filter layer 401 is formed over an intermediate layer or layers, depending upon the particular process used. For example, in some instances, a planarizing dielectric layer is formed over the substrate, or in other instances, conductive metal layers and insulating layers are formed over the substrate.
- the color filter layer 401 is composed of three separate color layers that have been patterned and etched to form the color filter layer 401 .
- the color filter layer 401 includes red, green, and blue colors.
- the color filter layer 401 includes yellow, cyan, and magenta colors.
- the color filter layer 401 is formed from a pigmented or dyed material that will only allow a narrow band of light to pass therethrough, for example, red, blue, or green.
- the color filter may be cyan, yellow, or magenta. These are but example colors for the color filter layer 401 and the present invention is meant to encompass a color filter layer 401 having any combination of color.
- color filter layer 401 is known in art and will not be described herein to avoid any unnecessary obscuration with the description of the present invention.
- U.S. Pat. No. 6,297,071, U.S. Pat. No. 6,362,513, and U.S. Pat. No. 6,271,900 show the current state of the color filter art.
- the color filter layer 401 is formed from a material such as an acrylic.
- a suitable material is polymethylmethacrylate (PMMA) or polyglycidylmethacrylate (PGMA) that has been pigmented or dyed.
- PMMA polymethylmethacrylate
- PGMA polyglycidylmethacrylate
- Other photoresist-type materials that can be dyed or pigmented may also be used for the color filter layer 401 .
- a sacrificial layer 403 is formed.
- the sacrificial layer 403 may be formed using a blanket deposition process, or alternatively, using a spin on method.
- the sacrificial layer 403 is a photoresist, epoxy, or an acrylic.
- a suitable material is polymethylmethacrylate (PMMA) or polyglycidylmethacrylate (PGMA) or any photoresist material.
- the sacrificial layer 403 is a phenyl.
- the sacrificial layer 403 is patterned to form blocks 501 of sacrificial layer 403 .
- the blocks 501 are generally formed over the light sensitive elements 303 .
- the blocks 501 are of cylindrical shape, but may be square, rectangular, or any other shape, so long as the light sensitive elements 303 are covered.
- the patterning process can be simply done by a photolithography and development step. However, if the sacrificial layer 403 is not a photoresist, a patterning and etching process using conventional photolithography and photoresist may be used.
- the thickness of the sacrificial layer 403 is on the order of 0.1 to 1 microns. However, thinner or thicker layers of the sacrificial layer 403 may also be used, depending on various design parameters, such as desired focal length of the combination micro-lens/color filter 205 .
- the specific shape and dimensions of the blocks 501 shown in FIG. 5 is but one specific embodiment of the present invention. Other implementations are possible. For example, the size of the blocks 501 shown in FIG. 5 may be made smaller or larger depending upon the desired size of the micro-lenses to be formed.
- the blocks 501 are heated to a reflow temperature. This causes the blocks 501 to adopt a minimum surface tension shape, which in many cases results in spherical drops 601 .
- an anisotropic dry etch is performed using the spherical drops 601 as an etching mask.
- the etch is a reactive ion etch using O2 as the primary gas and CH3 as a secondary gas.
- the etching ratio between the color filter layer 401 and the sacrificial layer 403 is on the order of 0.8 to 1.5. In one embodiment, the etching process is complete when the sacrificial layer 403 is removed.
- the result of the dry etch is a transfer of the shape of the spherical drops to the color filter layer 401 to form a combination micro-lens/color filter 701 over each light sensitive element 303 .
- the result is seen in FIG. 7 .
- the spacing between adjacent micro-lenses/color filters can be varied by controlling the spacing and shape of the spherical drops 601 . It can be appreciated that the size and shape of the spherical drops 601 , the etching length, the composition of the color filter material 401 and sacrificial layer 403 , and other process/design factors can be varied to achieve the desired result for the characteristics of the micro-lenses/color filters.
- an optional passivation layer 307 is applied atop of the micro-lens/color filters 205 .
- the passivation layer 307 serves dual purposes. First, because the etching process may damage the color filter material 401 , repair may be necessary. Second, the passivation layer 307 may also serve to protect the color filter material 401 .
- the term passivation layer 307 as used herein refers to any material that can accomplish any of the above goals.
- the passivation layer 307 is an acrylic, such as PMMA, which has a molecular number of between 50,000 and 200,000. The application of PMMA can be done in any known manner.
Abstract
An image sensor comprising a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element, and a color filter material formed over the light sensitive element, the color filter material formed in a micro-lens shape.
Description
- The present invention relates to image sensors, and more particularly, towards an image sensor that has a combination micro-lens and color filter resulting in a short focal length.
- Image sensors are electronic integrated circuits that can be used to produce still or video images. Solid state image sensors can be either of the charge coupled device (CCD) type or the complimentary metal oxide semiconductor (CMOS) type. In either type of image sensor, a light gathering pixel is formed in a substrate and arranged in a two-dimensional array. Modern image sensors typically contain millions of pixels to provide a high-resolution image. An important part of the image sensor are the color filters and micro-lens structures formed atop of the pixels. The color filters, as the name implies, are operative, in conjunction with signal processing, to provide a color image. Examples of color filter technology are shown in U.S. Pat. No. 6,297,071 and U.S. Pat. No. 6,274,917 (and the references cited therein). The micro-lenses serve to focus the incident light onto the pixels, and thus to improve the fill factor of each pixel.
- Conventionally, micro-lenses are formed by spin coating a layer of micro-lens material onto a planarized layer. The micro-lens material is then etched to form cylindrical or other shaped regions that are centered above each pixel. Then, the micro-lens material is heated and reflowed to form a convex hemispherical micro-lens.
FIG. 1 shows a prior art cross-sectional simplified diagram of animage sensor 101 having micro-lenses formed thereon. As seen inFIG. 1 , the image sensor includes a plurality of pixels that havelight detecting elements 103 formed in the substrate. Thelight detecting elements 103 may be one of several types, such as a photodiode, a photogate, or other solid state light sensitive element. Formed atop of each pixel is a micro-lens 105. Themicro-lens 105 focuses incident light onto thelight detecting elements 103. Moreover, in the region between thelight detecting elements 103 and themicro-lens 105, denoted byreference numeral 107, there are various intervening layers that would typically include the color filter layers and various metal conducting lines. - The combination of the convex micro-lens and the color filter layer provides a total thickness that would normally require a micro-lens with a relatively long focal length, which can be difficult to manufacture at higher integration densities. Further, the process of forming the micro-lens and the color filter includes many process steps.
-
FIG. 1 is a prior art cross sectional view of a portion of an image sensor. -
FIG. 2 is a top view of an image sensor showing pixels arranged in a two-dimensional array and with micro-lenses formed thereon. -
FIGS. 3-7 are cross sectional views of a semiconductor substrate illustrating one method for forming the apparatus of the present invention. - The present invention relates to a combination micro-lens and color filter structure for use with image sensors, either of the CMOS or CCD type. In the following description, numerous specific details are provided to provide a thorough understanding of the embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details, or with other methods, components, etc. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring aspects of various embodiments of the invention.
- Reference throughout the specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout the specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
-
FIG. 2 shows a top view of animage sensor 201 formed in accordance with the present invention. Theimage sensor 201 includes a plurality ofpixels 203 typically arranged in a two dimensional array. In the example shown inFIG. 2 , the image sensor shows a three by three array ofpixels 203, though it can be appreciated that anactual mage sensor 201 would have many more pixels, arranged in perhaps over a thousand rows and/or a thousand columns. Further, althoughFIG. 2 shows the pixels in ordered columns and rows, the pixels may be arranged in any type of ordered arrangement. For example, alternating rows may have their pixels slightly offset from each other laterally in a checkerboard format. - The
pixels 203 typically include a light sensitive element, such as a photodiode or a photogate as two examples. However, it can be appreciated that other types of light sensitive elements, now known or developed in the future, may be used. Further, thepixels 203 will also include amplification and/or readout circuitry. For clarity, this circuitry is not shown inFIG. 2 . In one embodiment, thepixels 203 may be active pixels, commonly known in the prior art. Formed atop of eachpixel 203 is a combination micro-lens/color filter 205. -
FIGS. 3-7 show in greater detail the formation and structure of the combination micro-lens/color filter 205 of the present invention. Specifically,FIG. 3 is a cross-sectional view taken along line A-A ofFIG. 2 . Asemiconductor substrate 301 has a plurality of light sensitive elements 303 (associated with thepixels 203 ofFIG. 2 ) formed therein.FIG. 3 shows the lightsensitive element 303 as a photodiode, though other substitutes and equivalents may be used. Details of forming the photodiode and other associated circuitry are known in the prior art and will not be repeated herein to avoid obscuring the present invention. However, examples of the prior art may be seen in U.S. Pat. No. 5,904,493 and U.S. Pat. No. 6,320,617. - Formed atop of the light
sensitive elements 303 are the combination micro-lens/color filter 205. The micro-lens/color filter 205 is a color filter that is formed into the shape of a micro-lens. In such a manner, by combining the color filter and the micro-lens into a single integrated structure, the combined thickness is lowered. Other advantages of this combined structure, as one example manufacturing ease and cost, are gained. Further, after formed atop of the micro-lens/color filter 205 is apassivation layer 307. Thepassivation layer 307 protects the micro-lens/color filter 205 from damage. - Turning to
FIG. 4 , in accordance with one embodiment of the present invention, a planarcolor filter layer 401 is deposited over thesubstrate 301 and lightsensitive elements 303. It should be noted that while in this particular embodiment, thecolor filter layer 401 is formed directly over thesubstrate 301, in other embodiments, thecolor filter layer 401 is formed over an intermediate layer or layers, depending upon the particular process used. For example, in some instances, a planarizing dielectric layer is formed over the substrate, or in other instances, conductive metal layers and insulating layers are formed over the substrate. - The
color filter layer 401 is composed of three separate color layers that have been patterned and etched to form thecolor filter layer 401. In one embodiment, thecolor filter layer 401 includes red, green, and blue colors. In another embodiment, thecolor filter layer 401 includes yellow, cyan, and magenta colors. Thecolor filter layer 401 is formed from a pigmented or dyed material that will only allow a narrow band of light to pass therethrough, for example, red, blue, or green. In other embodiments, the color filter may be cyan, yellow, or magenta. These are but example colors for thecolor filter layer 401 and the present invention is meant to encompass acolor filter layer 401 having any combination of color. - Further, while the use of pigmented or dyed color materials is the most prevalent form of color filters, other reflective type color filters may be used, such as a multilayer stack reflective material. The formation of
color filter layer 401 is known in art and will not be described herein to avoid any unnecessary obscuration with the description of the present invention. For example, U.S. Pat. No. 6,297,071, U.S. Pat. No. 6,362,513, and U.S. Pat. No. 6,271,900 show the current state of the color filter art. - Typically, the
color filter layer 401 is formed from a material such as an acrylic. For example, a suitable material is polymethylmethacrylate (PMMA) or polyglycidylmethacrylate (PGMA) that has been pigmented or dyed. Other photoresist-type materials that can be dyed or pigmented may also be used for thecolor filter layer 401. - Still referring to
FIG. 4 , after thecolor filter layer 401 has been formed using conventional means, asacrificial layer 403 is formed. Thesacrificial layer 403 may be formed using a blanket deposition process, or alternatively, using a spin on method. In one embodiment, thesacrificial layer 403 is a photoresist, epoxy, or an acrylic. One example of a suitable material is polymethylmethacrylate (PMMA) or polyglycidylmethacrylate (PGMA) or any photoresist material. In one embodiment, thesacrificial layer 403 is a phenyl. - Next, turning to
FIG. 5 , thesacrificial layer 403 is patterned to formblocks 501 ofsacrificial layer 403. Theblocks 501 are generally formed over the lightsensitive elements 303. In one embodiment, theblocks 501 are of cylindrical shape, but may be square, rectangular, or any other shape, so long as the lightsensitive elements 303 are covered. - In the case where the
sacrificial layer 403 is a photoresist, the patterning process can be simply done by a photolithography and development step. However, if thesacrificial layer 403 is not a photoresist, a patterning and etching process using conventional photolithography and photoresist may be used. - In one embodiment, the thickness of the
sacrificial layer 403 is on the order of 0.1 to 1 microns. However, thinner or thicker layers of thesacrificial layer 403 may also be used, depending on various design parameters, such as desired focal length of the combination micro-lens/color filter 205. - The specific shape and dimensions of the
blocks 501 shown inFIG. 5 is but one specific embodiment of the present invention. Other implementations are possible. For example, the size of theblocks 501 shown inFIG. 5 may be made smaller or larger depending upon the desired size of the micro-lenses to be formed. - Turning to
FIG. 6 , once thesacrificial layer 403 has been developed (in the case of thesacrificial layer 403 being a photoresist) or etched (in the case of a non-photoresist sacrificial layer), theblocks 501 are heated to a reflow temperature. This causes theblocks 501 to adopt a minimum surface tension shape, which in many cases results in spherical drops 601. - Once the reflow process has been finished, an anisotropic dry etch is performed using the spherical drops 601 as an etching mask. In one embodiment, the etch is a reactive ion etch using O2 as the primary gas and CH3 as a secondary gas. In one embodiment, the etching ratio between the
color filter layer 401 and thesacrificial layer 403 is on the order of 0.8 to 1.5. In one embodiment, the etching process is complete when thesacrificial layer 403 is removed. Because of the spherical drops 601, the result of the dry etch is a transfer of the shape of the spherical drops to thecolor filter layer 401 to form a combination micro-lens/color filter 701 over each lightsensitive element 303. The result is seen inFIG. 7 . - It should be noted that the spacing between adjacent micro-lenses/color filters can be varied by controlling the spacing and shape of the spherical drops 601. It can be appreciated that the size and shape of the spherical drops 601, the etching length, the composition of the
color filter material 401 andsacrificial layer 403, and other process/design factors can be varied to achieve the desired result for the characteristics of the micro-lenses/color filters. - Next, returning to
FIG. 3 , anoptional passivation layer 307 is applied atop of the micro-lens/color filters 205. Thepassivation layer 307 serves dual purposes. First, because the etching process may damage thecolor filter material 401, repair may be necessary. Second, thepassivation layer 307 may also serve to protect thecolor filter material 401. In any event, theterm passivation layer 307 as used herein refers to any material that can accomplish any of the above goals. In one embodiment, thepassivation layer 307 is an acrylic, such as PMMA, which has a molecular number of between 50,000 and 200,000. The application of PMMA can be done in any known manner. - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
Claims (13)
1. An image sensor comprising:
a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element; and
a color filter material formed over said light sensitive element, said color filter material formed in a micro-lens shape.
2. The image sensor of claim 1 wherein said color filter material comprises red color filter material, green color filter material, and blue color filter material.
3. The image sensor of claim 1 further including a color filter material comprises cyan color filter material, yellow color filter material, and magenta color filter material.
4. The image sensor of claim 1 wherein the color filter material is pigmented or dyed polymethylmethacrylate (PMMA) or polyglycidylmethacrylate (PGMA).
5. The image sensor of claim 1 further including a passivation layer formed over said color filter material.
6. The image sensor of claim 5 wherein said passivation layer has a molecular number of between 50,000 and 200,000.
7. A pixel of an image sensor comprising:
a light sensitive element formed in a semiconductor substrate; and
a color filter material formed over said light sensitive element, said color filter material formed in a micro-lens shape.
8. The pixel of claim 7 wherein said color filter material is selected from the group of red color filter material, green color filter material, and blue color filter material.
9. The pixel of claim 7 further including a color filter material is selected from the group of cyan color filter material, yellow color filter material, and magenta color filter material.
10. The pixel of claim 7 wherein the color filter material is pigmented or dyed polymethyl methacrylate (PMMA) or polyglycidyl methacrylate (PGMA).
11. The pixel of claim 7 further including a passivation layer formed over said color filter material.
12. The pixel of claim 11 wherein said passivation layer has a molecular number of between 50,000 and 200,000.
13.-18. (canceled)
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EP1414073A3 (en) | 2005-09-21 |
US6861280B2 (en) | 2005-03-01 |
EP1414073A2 (en) | 2004-04-28 |
TW200514196A (en) | 2005-04-16 |
TWI240992B (en) | 2005-10-01 |
US20040080008A1 (en) | 2004-04-29 |
CN1531100A (en) | 2004-09-22 |
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