US20050051514A1 - Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection - Google Patents
Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection Download PDFInfo
- Publication number
- US20050051514A1 US20050051514A1 US10/944,238 US94423804A US2005051514A1 US 20050051514 A1 US20050051514 A1 US 20050051514A1 US 94423804 A US94423804 A US 94423804A US 2005051514 A1 US2005051514 A1 US 2005051514A1
- Authority
- US
- United States
- Prior art keywords
- optical fiber
- fiber core
- etching
- present
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/121—Channel; buried or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/1215—Splitter
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.
Description
- This invention was made with United States Government support under Grant Numbers N00014-93-C-0114 and N00014-96-C-0219, awarded by the Office of Naval Research. The United States Government has certain rights in the invention.
- 1. Field of the Invention
- The present invention relates to a process for manufacturing structures on a substrate. More specifically, the present invention relates to creating optical components within an integrated circuit through a process that uses chemically-selective endpoint detection.
- 2. Related Art
- The dramatic advances in computer system performance during the past 20 years can largely be attributed to improvements in the processes that are used to fabricate integrated circuits. By making use of the latest fabrication processes, integrated circuit designers can presently integrate computing systems comprised of hundreds of millions of transistors onto a single semiconductor die which is a fraction of the size of a human fingernail.
- Integrated circuit fabrication technology is also being used to fabricate optical devices such as lasers within integrated circuit devices, and which have dimensions measured in fractions of microns.
- A typical fabrication process builds structures through successive cycles of layer deposition and subtractive processing, such as etching. As the dimensions of individual circuit elements continue to decrease, it is becoming necessary to more tightly control the etching operation. For example, in a typical etching process, etching is performed for an amount of time that is estimated by taking into account the time to etch through a layer to reach an underlying layer, and the time to overetch into the underlying layer. However, this process can only be controlled to +/−100 Angstroms, which can be a problem when fine control of dimensions is required.
- Furthermore, conventional etching processes that indiscriminately etch all exposed surfaces are not well suited to manufacture some structures that require tighter control over subtractive processing operations. As circuit structures become smaller, there is less tolerance available to account for uncertainties in the manufacturing process.
- Additionally, connecting optical devices within an integrated circuit typically requires aligning optical fibers with an optical device such as a laser, or converting the optical signals to electrical signals at the source and converting the electrical signals back to optical signals at the destination. Aligning optical fibers with an optical device is difficult and time consuming because of the small dimensions involved, while converting the form of the signals can lead to signal degradation.
- What is needed is a method of fabricating and connecting optical components that does not have the difficulties listed above.
- One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.
- In one embodiment of the present invention, the system adds a filler to fill the cavity left by removing the sacrificial layer and planarizes the circuit device using chemo-mechanical polishing to create a planarized surface.
- In one embodiment of the present invention, the substrate is Si and the buffer layer is SiGe or SiGeC. Using SiGeC for the buffer layer allows growth of a thicker buffer layer than when using SiGe. In this embodiment, the sacrificial layer is Si, the optical fiber core is SiO2:GeO2, the selective etchant used to remove the sacrificial layer is KOH or tetramethylammonium hydroxide (TMAH), and the cladding layer on the optical fiber core is SiO2. It is appreciated that other materials and etchants may be used.
- In one embodiment of the present invention, the buffer layer is SiGeC, wherein carbon is greater than or equal to one atomic percent.
- In one embodiment of the present invention, the buffer layer is SiGeC, wherein carbon is less than or equal to one atomic percent.
- In one embodiment of the present invention, the filler is SiO2.
- In one embodiment of the present invention, the buffer layer is an epitaxial layer.
- In one embodiment of the present invention, the sacrificial layer is an epitaxial layer.
- In one embodiment of the present invention, the optical fiber core is an epitaxial layer.
- In one embodiment of the present invention, the system splits the optical fiber core into multiple optical fiber cores to form an optical multiplexer.
- In one embodiment of the present invention, the system combines multiple optical fiber cores into a single optical fiber core to form an optical demultiplexer.
- One embodiment of the present invention provides a system to facilitate integrating active or passive components on a circuit device that includes an optical fiber core that was epitaxially grown. During operation, the system receives this circuit device, and etches a cavity into the circuit device, wherein the cavity passes through the optical fiber core. The system also creates an active device within the cavity that is aligned with the optical fiber core.
- In one embodiment of the present invention, etching the cavity includes etching into a buffer layer below the optical fiber core.
- In one embodiment of the present invention, etching the cavity includes etching into a substrate layer below the optical fiber core.
- In one embodiment of the present invention, the substrate layer includes a doped semiconductor region that can form part of the active device.
- In one embodiment of the present invention, the system applies a metallization layer to the active device to form conduction paths for the active device.
- In one embodiment of the present invention, the metallization layer forms a mirror metallization.
-
FIG. 1A illustrates preparing a circuit device with a sacrificial layer in accordance with an embodiment of the present invention. -
FIG. 1B illustrates forming optical fiber cores on the sacrificial layer in accordance with an embodiment of the present invention. -
FIG. 1C illustrates removing the sacrificial layer and cladding the optical fiber core in accordance with an embodiment of the present invention. -
FIG. 1D illustrates including a filler in accordance with an embodiment of the present invention. -
FIG. 2A illustrates an optical multiplexer in accordance with an embodiment of the present invention. -
FIG. 2B illustrates an optical demultiplexer in accordance with an embodiment of the present invention. -
FIG. 3 is a flowchart illustrating the process of forming optical fiber cores on a circuit device in accordance with an embodiment of the present invention. -
FIG. 4A illustrates a longitudinal cross-section view of a circuit device in accordance with an embodiment of the present invention. -
FIG. 4B illustrates cavities etched into the circuit device in accordance with an embodiment of the present invention. -
FIG. 4C illustrates active devices formed in the cavities in the circuit device in accordance with an embodiment of the present invention. -
FIG. 4D illustrates metallization applied to the circuit device in accordance with an embodiment of the present invention. -
FIG. 5 is a flowchart illustrating the process of forming active devices in the circuit device in accordance with an embodiment of the present invention. - The following description is presented to enable any person skilled in the art to make and use the invention, and is provided in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present invention. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
- Creating a Circuit Device with an Optical Fiber Core
-
FIG. 1A illustrates preparing a circuit device with a sacrificial layer in accordance with an embodiment of the present invention. The circuit device includessubstrate 102, which can include the material Si. Note that the materials described herein include only one possible combination. A practitioner with ordinary skill in the art will be able to readily substitute other suitable materials for the ones described. -
Buffer layer 104 is epitaxially grown onsubstrate 102.Buffer layer 104 can include SiGe or SiGeC. Using SiGeC allows the growth of thicker layers than does using SiGe. Note that using different materials for the various layers allows use of different chemical etchants to selectively etch the various layers. -
Sacrificial layer 106 is epitaxially grown onbuffer layer 104.Sacrificial layer 106 can include Si and is used to transfer the crystalline structure ofbuffer layer 104 to layers that are grown onsacrificial layer 106.Sacrificial layer 106 will be selectively etched away after forming these additional layers.Epitaxial blocking layer 108 has been added to the circuit device to control where additional layers will be grown onsacrificial layer 106.Epitaxial blocking layer 108 can include SiO2 or SiN. -
FIG. 1B illustrates forming optical fiber cores on the sacrificial layer in accordance with an embodiment of the present invention.Optical fiber cores 110 are epitaxially grown onsacrificial layer 106 and can include SiGe or SiO2:GeO2.Optical fiber cores 110 can include beams through the circuit device and can be routed through the circuit device as needed. Note that the material composition may be controlled during growth ofoptical fiber cores 110 to create a graded index optical fiber core. -
FIG. 1C illustrates removing the sacrificial layer and the addition of cladding to the optical fiber core in accordance with an embodiment of the present invention. After growth ofoptical fiber cores 110,epitaxial blocking layer 108 is removed andsacrificial layer 106 is selectively etched using an etchant such as KOH or TMAH.Cladding layer 112 can then be added tooptical fiber cores 110. A typical material forcladding layer 112 is SiO2. Note that applyingcladding layer 112 by thermal oxidation will tend to roundoptical fiber cores 110, thereby enhancing the graded index effect. Note also that SiGe and SiGeC can be selectively etched using hydrofluoric/nitric/acetic (HNA) acids. -
FIG. 1D illustrates includingfiller 114 in accordance with an embodiment of the present invention.Filler 114 can include any suitable material, gas, or liquid such as the same material, SiO2, used forcladding layer 112. Note thatfiller 114 is optional and may be wholly or partially omitted. - Optical Multiplexers and Demultiplexers
-
FIG. 2A illustrates an optical multiplexer in accordance with an embodiment of the present invention.Optical fiber core 202 is branched intooptical fiber cores optical fiber core 202 may branch into more or less optical fiber cores than shown. The optical multiplexer can be created by controlling the apertures inepitaxial blocking layer 108. -
FIG. 2B illustrates an optical demultiplexer in accordance with an embodiment of the present invention.Optical fiber cores optical fiber core 216. Note thatoptical fiber core 202 may combine more or less optical fiber cores than shown. The optical demultiplexer can be created by controlling the apertures inepitaxial blocking layer 108. - Forming Optical Fiber Cores
-
FIG. 3 is a flowchart illustrating the process of forming optical fiber cores on a circuit device in accordance with an embodiment of the present invention. The system starts by receivingsubstrate 102 including buffer layer 104 (step 302). Next, the system forms epitaxialsacrificial layer 106 on buffer layer 104 (step 304). Note thatsacrificial layer 106 is used to transfer the crystalline template frombuffer layer 104 to layers grown onsacrificial layer 106 such asoptical fiber cores 110. -
Epitaxial blocking layer 108 is then applied to sacrificial layer 106 (step 306). Next, photoresist is applied to epitaxial blocking layer 108 (step 308). After photoresist has been applied the system exposes and develops the photoresist to create a pattern on the photoresist (step 310). Next,epitaxial blocking layer 108 is etched to transfer the pattern layer 108 (step 312). -
Optical fiber cores 110 are then epitaxially grown on the exposed portions of sacrificial layer 106 (step 314). Next,epitaxial blocking layer 108 is removed (step 316). Afterepitaxial blocking layer 108 has been removed,sacrificial layer 106 is removed by selective etching (step 318). -
Cladding layer 112 is then added to optical fiber cores 110 (step 320). Finally,filler 114 can be added to the cavity if desired (step 322). - Creating Active Devices
-
FIG. 4A illustrates a longitudinal cross-section view of a circuit device in accordance with an embodiment of the present invention. The circuit device includessubstrate 402,buffer layer 406,cladding layer 408,filler 410, andoptical fiber core 412. The process described above in conjunction withFIGS. 1 through 3 can create these layers. -
Substrate 402 can includeregions 404.Regions 404 can be doped semiconductor regions such as N-type or P-type Si, or can be intrinsic Si. As previously noted, the materials described herein are exemplary and are not to be construed as the only possible materials for creating the various layers and structures.Photoresist 414 is applied, exposed, and developed to create windows for etching the structures. -
FIG. 4B illustrates cavities etched into the circuit device in accordance with an embodiment of the present invention. Cavities have been etched into the circuit device using a combination of dry etching and wet etching, wherein wet etching has been used to selectively removebuffer layer 406 while not etching intoregions 404 insubstrate 402. Note that etching may be used to over-etch intoregions 404 if desired. Note also, that etching may be stopped atbuffer layer 406 or withinbuffer layer 406 if desired. -
FIG. 4C illustrates active devices formed in the cavities in the circuit device in accordance with an embodiment of the present invention. Various active layers may be grown within the cavities to formactive regions optical fiber core 412. This allows coupling optical signals throughoptical fiber core 412 betweencircuit layers Photoresist 416 has been added for subsequent exposure and developing to create a pattern for metallization. -
FIG. 4D illustrates metallization applied to the circuit device in accordance with an embodiment of the present invention.Metallization 424 has been added toactive regions active regions Mirror metallization 426 has been added to the circuit elements ofactive region 419. Other configurations are equally likely. - Forming Active Devices
-
FIG. 5 is a flowchart illustrating the process of forming active devices in the circuit device in accordance with an embodiment of the present invention. The system starts by receiving the circuit device including optical fiber core 412 (step 502). This circuit device withoptical fiber core 412 can be constructed as described above in conjunction withFIGS. 1 through 3 . -
Next photoresist 414 is applied to the surface of the circuit device (step 504).Photoresist 414 is then exposed through a mask and developed to form a pattern on the circuit device (step 506). - Next, the various layers are etched to form cavities within the circuit device (step 508). Note that this etching can include a combination of dry etching and wet etching. The etching can be stopped within
buffer layer 406, atregions 404, or can be over-etched intoregions 404. Selective chemical etching can be used to automatically terminate etching atregions 404. - Active devices are then created within the cavities etched into the circuit device (step 510). These active devices can include active devices such as lasers, optical switches, etc., or passive devices such as lenses, mirrors, etc. Note that circuit layers 420 and 422 of the active devices are self-aligned with
optical fiber core 412 eliminating the necessity of connecting an external optical fiber or converting the optical signal to an electrical signal to couple signals betweencircuit layers - After forming the active devices in
active regions photoresist 416 is applied to the surface (step 512). Next a pattern is exposed and developed in photoresist 416 (step 514). Finally,metallization - The foregoing descriptions of embodiments of the present invention have been presented for purposes of illustration and description only. They are not intended to be exhaustive or to limit the present invention to the forms disclosed. Accordingly, many modifications and variations will be apparent to practitioners skilled in the art. Additionally, the above disclosure is not intended to limit the present invention. It is appreciated that other active (e.g. moveable mirrors, etc.) and passive devices (e.g. lenses, micro-lenses, gratings, etc.) may be fabricated using the present invention. The scope of the present invention is defined by the appended claims.
Claims (9)
1-15. (Canceled).
16. A method to facilitate integrating active components on a circuit device, wherein the circuit device includes an optical fiber core that was epitaxially grown, comprising;
receiving the circuit device;
etching a cavity into the circuit device, wherein the cavity passes through the optical fiber core; and
creating a device within the cavity, wherein the device is aligned with the optical fiber core and wherein the device is an active device or a passive device.
17. The method of claim 16 , wherein etching the cavity includes etching into a buffer layer below the optical fiber core.
18. The method of claim 16 , wherein etching the cavity includes etching into a substrate layer below the optical fiber core.
19. The method of claim 18 , wherein the substrate layer includes a doped semiconductor region, whereby the doped semiconductor region can form part of the active device.
20. The method of claim 16 , further comprising applying a metallization layer to the active device, whereby the metallization layer forms conduction paths for the active device.
21. The method of claim 20 , wherein the metallization layer forms a mirror metallization.
22. A method to facilitate self aligned connections, wherein creating a device includes creating a self-aligned device that is self-aligned to an external fiber.
23-43. (Canceled).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/944,238 US20050051514A1 (en) | 2002-05-15 | 2004-09-16 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/146,278 US6800212B2 (en) | 2002-05-15 | 2002-05-15 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
US10/944,238 US20050051514A1 (en) | 2002-05-15 | 2004-09-16 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/146,278 Division US6800212B2 (en) | 2002-05-15 | 2002-05-15 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050051514A1 true US20050051514A1 (en) | 2005-03-10 |
Family
ID=29418786
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/146,278 Expired - Fee Related US6800212B2 (en) | 2002-05-15 | 2002-05-15 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
US10/944,238 Abandoned US20050051514A1 (en) | 2002-05-15 | 2004-09-16 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/146,278 Expired - Fee Related US6800212B2 (en) | 2002-05-15 | 2002-05-15 | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection |
Country Status (3)
Country | Link |
---|---|
US (2) | US6800212B2 (en) |
AU (1) | AU2003276829A1 (en) |
WO (1) | WO2004010166A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9239424B2 (en) * | 2014-01-28 | 2016-01-19 | International Business Machines Corporation | Semiconductor device and method for fabricating the same |
WO2017031303A1 (en) * | 2015-08-18 | 2017-02-23 | University Of Cincinnati | Analyte sensor and method of use |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824493A (en) * | 1972-09-05 | 1974-07-16 | Bell Telephone Labor Inc | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror |
US5387269A (en) * | 1993-09-03 | 1995-02-07 | At&T Bell Laboratories | Methods for making planar waveguides with removal of a sacrifical member which surrounds the core |
US5471552A (en) * | 1995-02-22 | 1995-11-28 | Industrial Technology Research Institute | Fabrication of static-alignment fiber-guiding grooves for planar lightwave circuits |
US5764820A (en) * | 1993-03-19 | 1998-06-09 | Akzo Nobel Nv | Method of forming integrated electro-optical device containing polymeric waveguide and semiconductor |
US5841930A (en) * | 1996-02-29 | 1998-11-24 | Northern Telecom Limited | Semiconductor optical waveguide |
US6231771B1 (en) * | 1998-12-14 | 2001-05-15 | Bookham Technology Plc | Process for making optical waveguides |
US20010009597A1 (en) * | 2000-01-25 | 2001-07-26 | Alibert Guilhem J.M. | Self-alignment hybridization process and component |
US6391214B1 (en) * | 1996-07-10 | 2002-05-21 | Nortel Networks Limited | Method for the hybrid integration of discrete elements on a semiconductor substrate |
US6671438B2 (en) * | 2000-11-01 | 2003-12-30 | Hitachi, Ltd. | Optical waveguide, optical module, and their fabrication method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244818A (en) * | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
US5465860A (en) * | 1994-07-01 | 1995-11-14 | Intel Corporation | Method of forming an integrated circuit waveguide |
KR100229788B1 (en) * | 1996-05-29 | 1999-11-15 | 전주범 | Lightpath modulation device fabrication method |
US7427526B2 (en) * | 1999-12-20 | 2008-09-23 | The Penn State Research Foundation | Deposited thin films and their use in separation and sacrificial layer applications |
US6307663B1 (en) * | 2000-01-26 | 2001-10-23 | Eastman Kodak Company | Spatial light modulator with conformal grating device |
US6807352B2 (en) * | 2001-02-11 | 2004-10-19 | Georgia Tech Research Corporation | Optical waveguides with embedded air-gap cladding layer and methods of fabrication thereof |
FR2820833B1 (en) * | 2001-02-15 | 2004-05-28 | Teem Photonics | PIVOT OPTICAL MICRO-MIRROR, MATRIX OF SUCH MICRO-MIRRORS AND METHOD FOR PRODUCING THE SAME |
-
2002
- 2002-05-15 US US10/146,278 patent/US6800212B2/en not_active Expired - Fee Related
-
2003
- 2003-05-01 AU AU2003276829A patent/AU2003276829A1/en not_active Abandoned
- 2003-05-01 WO PCT/US2003/014125 patent/WO2004010166A2/en not_active Application Discontinuation
-
2004
- 2004-09-16 US US10/944,238 patent/US20050051514A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824493A (en) * | 1972-09-05 | 1974-07-16 | Bell Telephone Labor Inc | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror |
US5764820A (en) * | 1993-03-19 | 1998-06-09 | Akzo Nobel Nv | Method of forming integrated electro-optical device containing polymeric waveguide and semiconductor |
US5387269A (en) * | 1993-09-03 | 1995-02-07 | At&T Bell Laboratories | Methods for making planar waveguides with removal of a sacrifical member which surrounds the core |
US5471552A (en) * | 1995-02-22 | 1995-11-28 | Industrial Technology Research Institute | Fabrication of static-alignment fiber-guiding grooves for planar lightwave circuits |
US5841930A (en) * | 1996-02-29 | 1998-11-24 | Northern Telecom Limited | Semiconductor optical waveguide |
US6391214B1 (en) * | 1996-07-10 | 2002-05-21 | Nortel Networks Limited | Method for the hybrid integration of discrete elements on a semiconductor substrate |
US6231771B1 (en) * | 1998-12-14 | 2001-05-15 | Bookham Technology Plc | Process for making optical waveguides |
US20010009597A1 (en) * | 2000-01-25 | 2001-07-26 | Alibert Guilhem J.M. | Self-alignment hybridization process and component |
US6671438B2 (en) * | 2000-11-01 | 2003-12-30 | Hitachi, Ltd. | Optical waveguide, optical module, and their fabrication method |
Also Published As
Publication number | Publication date |
---|---|
US20030215968A1 (en) | 2003-11-20 |
WO2004010166A3 (en) | 2004-04-15 |
AU2003276829A1 (en) | 2004-02-09 |
WO2004010166A2 (en) | 2004-01-29 |
AU2003276829A8 (en) | 2004-02-09 |
US6800212B2 (en) | 2004-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7076135B2 (en) | Optical module and manufacturing method therefor | |
EP0604407B1 (en) | Photonic-integrated-circuit fabrication process | |
EP3091381B1 (en) | Method for realizing heterogeneous iii-v silicon photonic integrated circuits | |
JP2005208638A (en) | Low-loss silicon waveguide and method of fabricating the same | |
JPH07117614B2 (en) | Method for manufacturing device having tandem groove | |
US6621961B2 (en) | Self-alignment hybridization process and component | |
JP2008166776A (en) | METHOD OF MANUFACTURING SOI SUBSTRATE ASSOCIATING SILICON-BASED REGION WITH GaAs-BASED REGION | |
KR20060040711A (en) | Solution to thermal budget | |
US20040020893A1 (en) | Method of producing a rib waveguide | |
US6800212B2 (en) | Fabrication of optical components using Si, SiGe, SiGeC, and chemical endpoint detection | |
US6828171B2 (en) | Systems and methods for thermal isolation of a silicon structure | |
KR100342471B1 (en) | Fabricating method of nickel etching mask | |
TW200839330A (en) | Low-loss optical device structure | |
JP4529194B2 (en) | Optoelectronic integrated circuit device | |
US6818137B2 (en) | Fabrication of electronic magnetic, optical, chemical, and mechanical systems using chemical endpoint detection | |
US6559058B1 (en) | Method of fabricating three-dimensional components using endpoint detection | |
JP2015087509A (en) | Optical waveguide manufacturing method | |
US20210284524A1 (en) | Silicon substrate having cavity and cavity soi substrate including the silicon substrate | |
US6642154B2 (en) | Method and apparatus for fabricating structures using chemically selective endpoint detection | |
JPH1164653A (en) | Array waveguide grating element | |
JP2892569B2 (en) | Fabrication method of photodetector with built-in circuit | |
WO2002097489A2 (en) | Method of fabricating mode-size converter with three-dimensional taper | |
KR100335776B1 (en) | Method for fabricating field oxide layer of semiconductor device | |
JP2004126261A (en) | Method for manufacturing planar optical circuit type optical element | |
CN111170267A (en) | Method for manufacturing MEMS driver |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |