US20040235226A1 - Electrical interconnection and thin film transistor fabrication methods, and integrated circuitry - Google Patents

Electrical interconnection and thin film transistor fabrication methods, and integrated circuitry Download PDF

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US20040235226A1
US20040235226A1 US10/870,563 US87056304A US2004235226A1 US 20040235226 A1 US20040235226 A1 US 20040235226A1 US 87056304 A US87056304 A US 87056304A US 2004235226 A1 US2004235226 A1 US 2004235226A1
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conductive layer
conductive
forming
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Charles Dennison
Monte Manning
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Definitions

  • This invention relates to electrical interconnection and thin film transistor fabrication methods, and to integrated circuitry having electrically interconnected layers.
  • a static memory cell is characterized by operation in one of two mutually exclusive and cell-maintaining operating states. Each operating state defines one of the two possible binary bit values, zero or one.
  • a static memory cell typically has an output which reflects the operating state of the memory cell. Such an output produces a “high” voltage to indicate a “set” operating state. The memory cell output produces a “low” voltage to indicate a “reset” memory cell operating state.
  • a low or reset output voltage usually represents a binary value of zero, and a high or set output voltage is represents a binary value of one.
  • a static memory cell is said to be bi-stable because it has two stable or self-maintaining operating states, corresponding to two different output voltages. Without external stimuli, a static memory cell will operate continuously in a single one of its two operating states. It has internal feedback to maintain a stable output voltage, corresponding to the operating state of the memory cell, as long as the memory cell receives power.
  • a static memory cell is in contrast to other types of memory cells, such as dynamic cells, which do not have stable operating states.
  • a dynamic memory cell can be programmed to store a voltage which represents one of two binary values, but requires periodic reprogramming or ‘refreshing’ to maintain this voltage for more than very short time periods.
  • a dynamic memory cell has no feedback to maintain a stable output voltage. Without refreshing, the output of a dynamic memory cell will drift toward intermediate or indeterminate voltages, effectively resulting in loss of data.
  • Dynamic memory cells are used in spite of this limitation because of the significantly greater packaging densities which can be attained.
  • a dynamic memory cell can be fabricated with a single MOSFET transistor, rather than the six transistors typically required in a static memory cell.
  • static memory design has developed along a different path than has the design of dynamic memories.
  • FIG. 1 Such illustrates a semiconductor wafer fragment 10 comprised of a bulk substrate 12 and overlying insulating layer 14 .
  • Bulk substrate 12 includes an n+ active area 16 which electrically connects with a gate of a thin film transistor, which is generally indicated by numeral 18 .
  • Such transistor includes a channel region 20 . The adjacent source and drain of such transistor would be into and out of the plane of the paper on which FIG. 1 appears.
  • a first or bottom gate conductive layer 22 is provided over insulating layer 14 and extends to electrically connect with active area 16 .
  • a bottom gate oxide dielectric layer 24 is provided atop bottom gate layer 22 and contacts with the bottom of transistor channel region 20 .
  • a top gate layer 26 overlies bottom dielectric layer 24 and the top of transistor channel region 20 .
  • An electrically conductive top gate layer 28 is provided and patterned over top gate oxide dielectric layer 26 .
  • a contact opening 30 is provided through top and bottom gate oxide layers 26 , 24 respectively, over active area 16 prior to top gate layer 28 deposition. Such results in electrical interconnection of top gate 28 with a bottom gate 22 .
  • channel region 20 is surrounded by conductive gate material for switching transistor 18 “on”.
  • FIG. 1 is a diagrammatic section of a semiconductor wafer fragment processed in accordance with prior art methods, and is described in the “Background” section above.
  • FIG. 2 is a diagrammatic section of a semiconductor wafer fragment processed in accordance with the invention. Such view is a section of the wafer fragment taken along a position relative to line Y-Y in FIG. 4.
  • FIG. 3 is a view of the FIG. 2 wafer fragment taken at a same processing step as that illustrated by FIG. 2. Such view is a section of the wafer fragment taken along a position relative to line X-X in FIG. 4.
  • FIG. 4 is a diagrammatic top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 2.
  • FIG. 5 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 2.
  • FIG. 6 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 3 and corresponding in process sequence to that of FIG. 5.
  • FIG. 7 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 5.
  • FIG. 8 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 6 and corresponding in process sequence to that of FIG. 7.
  • FIG. 9 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 7.
  • FIG. 10 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 7.
  • FIG. 11 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 8 and corresponding in process sequence to that of FIG. 10.
  • FIG. 12 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 10.
  • FIG. 13 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 10.
  • FIG. 14 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 10 and corresponding in process sequence to that of FIG. 13.
  • FIG. 15 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 13.
  • FIG. 16 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 14 and corresponding in process sequence to that of FIG. 15.
  • FIG. 17 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 15.
  • FIG. 18 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 15.
  • FIG. 19 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 16 and corresponding in process sequence to that of FIG. 18.
  • FIG. 20 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 18.
  • FIG. 21 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 18.
  • FIG. 22 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 21.
  • FIG. 23 is a diagrammatic section of an alternate wafer fragment at a processing step in accordance with another aspect of the invention.
  • FIG. 24 is a view of the FIG. 23 wafer fragment taken at a processing step subsequent to that illustrated by FIG. 23.
  • FIG. 25 is a view of the FIG. 3 wafer fragment taken at a processing step subsequent to that illustrated by FIG. 24.
  • electrically conductive material signifies a material which is inherently conductive as deposited, or capable of being rendered electrically conducted by subsequent processing steps or applications of conventional operational electric fields.
  • a method of fabricating a bottom and top gated thin film transistor comprises the following steps:
  • an electrical interconnection method comprises:
  • an electrical interconnection method comprises:
  • the invention also contemplates integrated circuitry formed in accordance with the above methods, and well as other integrated circuitry.
  • a semiconductor wafer fragment is indicated generally by reference numeral 32 .
  • Such comprises a gate oxide layer 34 and word line 36 .
  • Bulk substrate would exist below gate oxide 34 , and is not shown for clarity.
  • Word line 36 is comprised of insulating regions 38 , electrically conductive polysilicon region 40 , and overlying electrically conductive silicide region 42 .
  • An insulating oxide layer 44 and subsequent insulative nitride layer 46 are provided over word line 36 .
  • Layers 46 and 44 have been photo-patterned and etched to produce a bottom electrode contact outline 48 (FIG. 4) which extends inwardly to expose and ultimately provide electrical connection silicide region 42 of word line 36 .
  • etch is timed such that silicide region 42 is reached with minimal over-etch such that the adjacent substrate is not reached.
  • a layer of electrically conductive material preferably polysilicon
  • Such layer is then chemical-mechanical polished (CMP) to isolate and define an electrically conductive bottom thin film transistor gate electrode 50 on a semiconductor substrate.
  • CMP chemical-mechanical polished
  • Such electrode has a planarized outer surface 52 and an outer surface area defined by outline 48 .
  • a bottom gate dielectric layer 54 is provided over bottom gate electrode layer 50 .
  • Such preferably comprises SiO 2 deposited to a thickness of from about 100 Angstroms to about 500 Angstroms.
  • a thin film transistor body layer 56 is provided over bottom gate layer 54 .
  • Such is preferably amorphous silicon as-deposited, which is then transformed to polycrystalline silicon by solid phase crystallization technique. Such preferably is provided to a thickness of from about 100 Angstroms to about 700 Angstroms.
  • a conventional V t n- adjust implant into layer 56 would then preferably be provided.
  • a top gate dielectric layer 58 is provided over thin film transistor body layer 56 .
  • Such preferably comprises SiO 2 deposited to a thickness of from about 100 Angstroms to about 500 Angstroms.
  • top transistor gate electrode layer 60 is provided over top gate dielectric layer 58 .
  • Such preferably comprises in situ conductively doped polysilicon deposited to a thickness of about 2,000 Angstroms.
  • inner and outer conductive layers 50 and 60 respectively are provided on a semiconductor wafer. Such are separated by an insulating material in the form of dielectric layers 54 and 58 , and the insulative nature of semiconductor material 56 .
  • top gate electrode, top gate dielectric, and body layers 60 , 58 , and 56 respectively are etched in a pattern which defines an electrically conductive top gate electrode 62 , top gate dielectric and body outline 64 which is received only partially within bottom gate electrode outer surface area 48 .
  • such composite etching is preferably conducted to be selective to bottom gate dielectric layer 54 .
  • Bottom gate electrode outer surface area 48 (FIG. 9) includes portions 66 which extend outwardly beyond outline 64 .
  • such composite etching defines an opposing pair of outwardly exposed top gate electrode sidewalls 68 , 70 , and an opposing pair of body sidewalls 72 and 74 .
  • a layer of insulating dielectric such as SiO 2 is provided over etched top gate electrode 62 and outwardly exposed sidewalls 68 , 70 , 72 and 74 .
  • Such layer is anisotropically etched to define insulating sidewall spacers 76 and 78 which leaves top gate electrode 62 outer sidewalls 68 and 70 outwardly exposed.
  • anisotropic etching is conducted without any photomasking relative to spacers 76 and 78 formation, to outwardly expose approximately 800 Angstroms of sidewalls 76 and 78 elevation. Photomasking might occur elsewhere with respect to the wafer, but preferably not for the purposes of forming such sidewall spacers.
  • such insulating layer is preferably etched to form spacers 76 and 78 which partially overlap outwardly exposed top gate electrode sidewalls 68 and 70 , yet provide outwardly exposed portions as well.
  • Such etching is also conducted to etch bottom gate dielectric layer 54 to outwardly expose bottom gate electrode upper surface area portions 66 which extend outwardly beyond outline 64 .
  • bottom gate electrode surface area 66 extending outwardly beyond outline 64 is outwardly exposed.
  • inner and outer conductive layers 50 and 52 respectively are thus etched to outwardly expose a sidewall of outer conductive layer 60 , and to outwardly expose inner conductive layer 50 .
  • thin film transistor body layer 56 can be considered as a mid-conductive layer, or more accurately a conductive capable layer, which is electrically isolated from and positioned between inner and outer conductive layers 60 and 50 , respectively.
  • Mid-conductive layer 56 thus includes sidewalls 72 and 74 which are covered by an insulating material in the form of spacers 76 and 73 .
  • the preferred thickness of the layer from which spacers 76 and 78 are formed is about 150 to 400 Angstroms, leaving the width of spacers 76 and 78 at preferably about 100 to 350 Angstroms.
  • a layer 80 of electrically conductive material is provided over the outwardly exposed top gate electrode 62 , sidewalls 68 and 70 , and over insulating spacers 76 and 78 , and over outwardly exposed bottom gate electrode surface area portions 66 .
  • Layer 80 preferably comprises in situ conductively doped polysilicon provided to a thickness of about 1,000 Angstroms. As will be appreciated by the artisan, electrical interconnection has thus been made between top gate electrode 62 and bottom gate electrode 50 without the typical added associated photo lithography step for connecting such electrodes as is shown by FIG. 1.
  • layer 80 is anisotropically etched to define electrically conductive sidewall links 82 and 84 which electrically interconnect top gate electrode sidewalls 68 , 70 , and bottom gate electrode surface area portions 66 .
  • anisotropic etching is again preferably conducted without any photomasking relative to the sidewall link formation, while photomasking might occur elsewhere on the wafer. Most preferably, no photomasking occurs during this etching step.
  • a layer of photoresist 86 is deposited and patterned, and top electrode layer 60 subsequently etched to provide the illustrated offset of top gate electrode 62 relative to bottom gate electrode so.
  • the etch of polysilicon 60 is terminated in an isotropic undercut etch to optionally enable a p-LDD implant into a region between p+ source/drain regions and transistor body region 56 .
  • the masked wafer is subjected to a p+ implant (with resist layer 86 still in place) for definition of source and drain regions 92 , 88 respectively.
  • a p+ implant with resist layer 86 still in place
  • Such also effectively defines a channel region 90 within thin film transistor body layer 56 .
  • Channel region overlaps with the bottom gate electrode, and has an insulated sidewall (FIG. 19).
  • source/drain and channel regions are effectively as defined by anisotropic etching of the layer of conductive material utilized to form sidewall interconnecting links 82 and 84 .
  • top gate electrode 62 underlaps bottom gate electrode 50 on the source and overlaps bottom gate electrode 50 on the drain side, as is shown.
  • the illustrated resist overhang can be utilized for providing a blanket p ⁇ implant 89 after the p+ implant is done with resist still in place, and then the resist is stripped off (to provide a PMOS LDD structure).
  • FIGS. 23-25 Such illustrates a semiconductor wafer fragment 94 comprised of a bulk substrate 95 and overlying insulating region 96 .
  • Two conductive layers 97 and 98 are provided atop insulating layer 96 .
  • Such conductive and insulating materials are etched, as shown, to define an opposing pair of outwardly exposed sidewalls 100 a , 100 b , and 100 c , 100 d , for each conductive layer.
  • a layer 101 of an electrically conductive material is deposited over etched conductive layers 97 and 98 and their respective sidewalls 100 a , 100 b and 100 c , 100 d .
  • the preferred material for conductive layer 101 is in situ conductively doped polysilicon.
  • layer 101 is subjected to an anisotropic etch to define a pair of electrically conductive sidewall links 10 Z- and 105 which effectively electrically interconnect conductive layers 97 and 98 .
  • anisotropic etching is most preferably conducting without is photomasking relative to the sidewall link formation, while other areas of the wafer might be masked. Most preferably, no photomasking occurs during this etching step.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)

Abstract

An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each conductive layer; c) depositing an electrically conductive material over the etched conductive layers and their respective sidewalls; and d) anisotropically etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. Such is utilizable to make thin film transistors and other circuitry.

Description

    TECHNICAL FIELD
  • This invention relates to electrical interconnection and thin film transistor fabrication methods, and to integrated circuitry having electrically interconnected layers. [0001]
    • BACKGROUND OF THE INVENTION
  • The invention grew out of needs associated with thin film transistors (TFTs) and their usage in high-density static random access memories (SRAMs). A static memory cell is characterized by operation in one of two mutually exclusive and cell-maintaining operating states. Each operating state defines one of the two possible binary bit values, zero or one. A static memory cell typically has an output which reflects the operating state of the memory cell. Such an output produces a “high” voltage to indicate a “set” operating state. The memory cell output produces a “low” voltage to indicate a “reset” memory cell operating state. A low or reset output voltage usually represents a binary value of zero, and a high or set output voltage is represents a binary value of one. [0002]
  • A static memory cell is said to be bi-stable because it has two stable or self-maintaining operating states, corresponding to two different output voltages. Without external stimuli, a static memory cell will operate continuously in a single one of its two operating states. It has internal feedback to maintain a stable output voltage, corresponding to the operating state of the memory cell, as long as the memory cell receives power. [0003]
  • The operation of a static memory cell is in contrast to other types of memory cells, such as dynamic cells, which do not have stable operating states. A dynamic memory cell can be programmed to store a voltage which represents one of two binary values, but requires periodic reprogramming or ‘refreshing’ to maintain this voltage for more than very short time periods. A dynamic memory cell has no feedback to maintain a stable output voltage. Without refreshing, the output of a dynamic memory cell will drift toward intermediate or indeterminate voltages, effectively resulting in loss of data. [0004]
  • Dynamic memory cells are used in spite of this limitation because of the significantly greater packaging densities which can be attained. For instance, a dynamic memory cell can be fabricated with a single MOSFET transistor, rather than the six transistors typically required in a static memory cell. Because of the significantly different architectural arrangements and functional requirements of static and dynamic memory cells and circuits, static memory design has developed along a different path than has the design of dynamic memories. [0005]
  • Ongoing efforts in SRAM circuitry to improve active loads has brought about the development of TFTs in attempts to provide low leakage current as well as high noise immunity. While the invention grew out of needs associated with TFTs of SRAM circuitry, the artisan will appreciate applicability of the invention to other types of circuitry. [0006]
  • Some recent TFT technology employs fully surrounded field effect transistor (FET) gate regions, such as shown in FIG. 1. Such illustrates a [0007] semiconductor wafer fragment 10 comprised of a bulk substrate 12 and overlying insulating layer 14. Bulk substrate 12 includes an n+ active area 16 which electrically connects with a gate of a thin film transistor, which is generally indicated by numeral 18. Such transistor includes a channel region 20. The adjacent source and drain of such transistor would be into and out of the plane of the paper on which FIG. 1 appears. A first or bottom gate conductive layer 22 is provided over insulating layer 14 and extends to electrically connect with active area 16. A bottom gate oxide dielectric layer 24 is provided atop bottom gate layer 22 and contacts with the bottom of transistor channel region 20. A top gate layer 26 overlies bottom dielectric layer 24 and the top of transistor channel region 20. An electrically conductive top gate layer 28 is provided and patterned over top gate oxide dielectric layer 26. A contact opening 30 is provided through top and bottom gate oxide layers 26, 24 respectively, over active area 16 prior to top gate layer 28 deposition. Such results in electrical interconnection of top gate 28 with a bottom gate 22. Thus, channel region 20 is surrounded by conductive gate material for switching transistor 18 “on”.
  • The above described construction requires photolithography and etch steps for producing contact opening [0008] 30, and separate patterning of top gate electrode 28. It would be desirable to provide methods of forming thin film transistors which minimize photolithography and etching steps.
    •  BRIEF DESCRIPTION OF THE DRAWINGS
  • Preferred embodiments of the invention are described below with reference to the following accompanying drawings. [0009]
  • FIG. 1 is a diagrammatic section of a semiconductor wafer fragment processed in accordance with prior art methods, and is described in the “Background” section above. [0010]
  • FIG. 2 is a diagrammatic section of a semiconductor wafer fragment processed in accordance with the invention. Such view is a section of the wafer fragment taken along a position relative to line Y-Y in FIG. 4. [0011]
  • FIG. 3 is a view of the FIG. 2 wafer fragment taken at a same processing step as that illustrated by FIG. 2. Such view is a section of the wafer fragment taken along a position relative to line X-X in FIG. 4. [0012]
  • FIG. 4 is a diagrammatic top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 2. [0013]
  • FIG. 5 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 2. [0014]
  • FIG. 6 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 3 and corresponding in process sequence to that of FIG. 5. [0015]
  • FIG. 7 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 5. [0016]
  • FIG. 8 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 6 and corresponding in process sequence to that of FIG. 7. [0017]
  • FIG. 9 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 7. [0018]
  • FIG. 10 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 7. [0019]
  • FIG. 11 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 8 and corresponding in process sequence to that of FIG. 10. [0020]
  • FIG. 12 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 10. [0021]
  • FIG. 13 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 10. [0022]
  • FIG. 14 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 10 and corresponding in process sequence to that of FIG. 13. [0023]
  • FIG. 15 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 13. [0024]
  • FIG. 16 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 14 and corresponding in process sequence to that of FIG. 15. [0025]
  • FIG. 17 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 15. [0026]
  • FIG. 18 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 15. [0027]
  • FIG. 19 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 3, but at a process step subsequent to that illustrated by FIG. 16 and corresponding in process sequence to that of FIG. 18. [0028]
  • FIG. 20 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 18. [0029]
  • FIG. 21 is a view of the FIG. 2 wafer fragment taken at the same relative position as FIG. 2, but at a process step subsequent to that illustrated by FIG. 18. [0030]
  • FIG. 22 is a top plan view of the FIG. 2 wafer fragment taken at the same processing step as that illustrated by FIG. 21. [0031]
  • FIG. 23 is a diagrammatic section of an alternate wafer fragment at a processing step in accordance with another aspect of the invention. [0032]
  • FIG. 24 is a view of the FIG. 23 wafer fragment taken at a processing step subsequent to that illustrated by FIG. 23. [0033]
  • FIG. 25 is a view of the FIG. 3 wafer fragment taken at a processing step subsequent to that illustrated by FIG. 24.[0034]
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” ([0035] Article 1, Section 8).
  • In the context of this document, “electrically conductive material” signifies a material which is inherently conductive as deposited, or capable of being rendered electrically conducted by subsequent processing steps or applications of conventional operational electric fields. [0036]
  • In accordance with one aspect of the invention, a method of fabricating a bottom and top gated thin film transistor comprises the following steps: [0037]
  • providing an electrically conductive bottom thin film transistor gate electrode layer on a semiconductor substrate, the bottom gate electrode layer having a planarized outer surface, the outer surface having a surface area; [0038]
  • providing a bottom gate dielectric layer over the bottom gate electrode layer; [0039]
  • providing a thin film transistor body layer over the bottom gate layer; [0040]
  • defining source, drain and channel regions within the thin film body layer; [0041]
  • providing a top gate dielectric layer over the thin film transistor body layer; [0042]
  • providing an electrically conductive top transistor gate electrode layer over the top gate dielectric layer; [0043]
  • etching the composite top gate electrode, top gate dielectric, and body layers in a pattern which defines a top gate electrode, top gate dielectric and body outline which is received only partially within the bottom gate electrode outer surface area, the bottom gate electrode outer surface area including a portion extending outwardly beyond the outline, the etching defining outwardly exposed top gate electrode and body sidewalls; [0044]
  • providing a layer of insulating dielectric over the etched top gate electrode and outwardly exposed sidewalls; [0045]
  • anisotropically etching the insulating dielectric layer to define an insulating sidewall spacer, the sidewall spacer leaving the top rate electrode sidewall outwardly exposed; [0046]
  • outwardly exposing bottom gate electrode surface area extending outwardly beyond the outline; [0047]
  • providing a layer of electrically conductive material over the outwardly exposed top gate electrode sidewall and outwardly exposed a bottom gate electrode surface area; and [0048]
  • anisotropically etching the layer of conducting material to define an electrically conductive sidewall link electrically interconnecting the top gate electrode sidewall and bottom gate electrode outer surface. [0049]
  • In accordance with another aspect of the invention, an electrical interconnection method comprises: [0050]
  • providing two conductive layers separated by an insulating material on a semiconductor wafer, [0051]
  • etching the conductive layers and insulating material to define and outwardly expose a sidewall of each conductive layer; [0052]
  • depositing an electrically conductive material over the etched conductive layers and their respective sidewalls; and [0053]
  • anisotropically etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. [0054]
  • In accordance with still a further aspect of the invention, an electrical interconnection method comprises: [0055]
  • providing inner and outer conductive layers separated by an insulating material on a semiconductor wafer; [0056]
  • etching the conductive layers and insulating material to define and outwardly expose a sidewall of the outer conductive layer and to outwardly expose the inner conductive layer; [0057]
  • depositing an electrically conductive material over the etched conductive layers, the electrically conductive material contacting the outer a conductive layer exposed sidewall and exposed inner conductive layer, and [0058]
  • anisotropically etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. [0059]
  • The invention also contemplates integrated circuitry formed in accordance with the above methods, and well as other integrated circuitry. [0060]
  • More specifically and referring initially to FIGS. 2-4, a semiconductor wafer fragment is indicated generally by [0061] reference numeral 32. Such comprises a gate oxide layer 34 and word line 36. Bulk substrate would exist below gate oxide 34, and is not shown for clarity. Word line 36 is comprised of insulating regions 38, electrically conductive polysilicon region 40, and overlying electrically conductive silicide region 42. An insulating oxide layer 44 and subsequent insulative nitride layer 46 are provided over word line 36. Layers 46 and 44 have been photo-patterned and etched to produce a bottom electrode contact outline 48 (FIG. 4) which extends inwardly to expose and ultimately provide electrical connection silicide region 42 of word line 36. The etch is timed such that silicide region 42 is reached with minimal over-etch such that the adjacent substrate is not reached. Subsequently, a layer of electrically conductive material, preferably polysilicon, is deposited atop the wafer to a thickness sufficient to completely fill bottom thin film transistor gate electrode outline 48. Such layer is then chemical-mechanical polished (CMP) to isolate and define an electrically conductive bottom thin film transistor gate electrode 50 on a semiconductor substrate. Such electrode has a planarized outer surface 52 and an outer surface area defined by outline 48. A more detailed description of forming such a construction is described in our co-pending U.S. patent application Ser. No. 08/061,402, filed on May 12, 1993, and entitled “Fully Planarized Thin Film Transistor (TFT) and Process To Fabricate Same”, which is hereby incorporated by reference.
  • Referring to FIGS. 5 and 6, a bottom [0062] gate dielectric layer 54 is provided over bottom gate electrode layer 50. Such preferably comprises SiO2 deposited to a thickness of from about 100 Angstroms to about 500 Angstroms. A thin film transistor body layer 56 is provided over bottom gate layer 54. Such is preferably amorphous silicon as-deposited, which is then transformed to polycrystalline silicon by solid phase crystallization technique. Such preferably is provided to a thickness of from about 100 Angstroms to about 700 Angstroms. A conventional Vt n- adjust implant into layer 56 would then preferably be provided. A top gate dielectric layer 58 is provided over thin film transistor body layer 56. Such preferably comprises SiO2 deposited to a thickness of from about 100 Angstroms to about 500 Angstroms. An electrically conductive top transistor gate electrode layer 60 is provided over top gate dielectric layer 58. Such preferably comprises in situ conductively doped polysilicon deposited to a thickness of about 2,000 Angstroms. Thus, and for purposes of the continuing discussion, inner and outer conductive layers 50 and 60 respectively, are provided on a semiconductor wafer. Such are separated by an insulating material in the form of dielectric layers 54 and 58, and the insulative nature of semiconductor material 56.
  • Referring to FIGS. 7-9, composite top gate electrode, top gate dielectric, and body layers [0063] 60, 58, and 56 respectively, are etched in a pattern which defines an electrically conductive top gate electrode 62, top gate dielectric and body outline 64 which is received only partially within bottom gate electrode outer surface area 48. Preferably and as is shown, such composite etching is preferably conducted to be selective to bottom gate dielectric layer 54. Bottom gate electrode outer surface area 48 (FIG. 9) includes portions 66 which extend outwardly beyond outline 64. For purposes of the continuing discussion, such composite etching defines an opposing pair of outwardly exposed top gate electrode sidewalls 68, 70, and an opposing pair of body sidewalls 72 and 74.
  • Referring to FIGS. 10-12, a layer of insulating dielectric, such as SiO[0064] 2, is provided over etched top gate electrode 62 and outwardly exposed sidewalls 68, 70, 72 and 74. Such layer is anisotropically etched to define insulating sidewall spacers 76 and 78 which leaves top gate electrode 62 outer sidewalls 68 and 70 outwardly exposed. Most preferably, such anisotropic etching is conducted without any photomasking relative to spacers 76 and 78 formation, to outwardly expose approximately 800 Angstroms of sidewalls 76 and 78 elevation. Photomasking might occur elsewhere with respect to the wafer, but preferably not for the purposes of forming such sidewall spacers. Most preferably, no photomasking occurs during this etching step. As shown, such insulating layer is preferably etched to form spacers 76 and 78 which partially overlap outwardly exposed top gate electrode sidewalls 68 and 70, yet provide outwardly exposed portions as well. Such etching is also conducted to etch bottom gate dielectric layer 54 to outwardly expose bottom gate electrode upper surface area portions 66 which extend outwardly beyond outline 64. Thus, bottom gate electrode surface area 66 extending outwardly beyond outline 64 is outwardly exposed. Further, inner and outer conductive layers 50 and 52 respectively are thus etched to outwardly expose a sidewall of outer conductive layer 60, and to outwardly expose inner conductive layer 50. Alternately considered, thin film transistor body layer 56 can be considered as a mid-conductive layer, or more accurately a conductive capable layer, which is electrically isolated from and positioned between inner and outer conductive layers 60 and 50, respectively. Mid-conductive layer 56 thus includes sidewalls 72 and 74 which are covered by an insulating material in the form of spacers 76 and 73. The preferred thickness of the layer from which spacers 76 and 78 are formed is about 150 to 400 Angstroms, leaving the width of spacers 76 and 78 at preferably about 100 to 350 Angstroms.
  • Referring to FIGS. 13 and 14, a [0065] layer 80 of electrically conductive material is provided over the outwardly exposed top gate electrode 62, sidewalls 68 and 70, and over insulating spacers 76 and 78, and over outwardly exposed bottom gate electrode surface area portions 66. Layer 80 preferably comprises in situ conductively doped polysilicon provided to a thickness of about 1,000 Angstroms. As will be appreciated by the artisan, electrical interconnection has thus been made between top gate electrode 62 and bottom gate electrode 50 without the typical added associated photo lithography step for connecting such electrodes as is shown by FIG. 1.
  • Referring to FIGS. 15-17, [0066] layer 80 is anisotropically etched to define electrically conductive sidewall links 82 and 84 which electrically interconnect top gate electrode sidewalls 68, 70, and bottom gate electrode surface area portions 66. Such anisotropic etching is again preferably conducted without any photomasking relative to the sidewall link formation, while photomasking might occur elsewhere on the wafer. Most preferably, no photomasking occurs during this etching step.
  • Referring to FIGS. 18-20, a layer of [0067] photoresist 86 is deposited and patterned, and top electrode layer 60 subsequently etched to provide the illustrated offset of top gate electrode 62 relative to bottom gate electrode so. Preferably, the etch of polysilicon 60 is terminated in an isotropic undercut etch to optionally enable a p-LDD implant into a region between p+ source/drain regions and transistor body region 56.
  • Referring to FIGS. 21 and 22, the masked wafer is subjected to a p+ implant (with resist [0068] layer 86 still in place) for definition of source and drain regions 92, 88 respectively. Such also effectively defines a channel region 90 within thin film transistor body layer 56. Channel region overlaps with the bottom gate electrode, and has an insulated sidewall (FIG. 19). Thus in accordance with the above described method, source/drain and channel regions are effectively as defined by anisotropic etching of the layer of conductive material utilized to form sidewall interconnecting links 82 and 84. Preferably, top gate electrode 62 underlaps bottom gate electrode 50 on the source and overlaps bottom gate electrode 50 on the drain side, as is shown. If desired, the illustrated resist overhang can be utilized for providing a blanket p− implant 89 after the p+ implant is done with resist still in place, and then the resist is stripped off (to provide a PMOS LDD structure).
  • Further aspects of the invention are described with reference to FIGS. 23-25. Such illustrates a [0069] semiconductor wafer fragment 94 comprised of a bulk substrate 95 and overlying insulating region 96. Two conductive layers 97 and 98, separated by an insulating material layer 99, are provided atop insulating layer 96. Such conductive and insulating materials are etched, as shown, to define an opposing pair of outwardly exposed sidewalls 100 a, 100 b, and 100 c, 100 d, for each conductive layer.
  • Referring to FIG. 24, a [0070] layer 101 of an electrically conductive material is deposited over etched conductive layers 97 and 98 and their respective sidewalls 100 a, 100 b and 100 c, 100 d. The preferred material for conductive layer 101 is in situ conductively doped polysilicon.
  • Referring to FIG. 25, [0071] layer 101 is subjected to an anisotropic etch to define a pair of electrically conductive sidewall links 10Z- and 105 which effectively electrically interconnect conductive layers 97 and 98. Such anisotropic etching is most preferably conducting without is photomasking relative to the sidewall link formation, while other areas of the wafer might be masked. Most preferably, no photomasking occurs during this etching step.
  • In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. [0072]

Claims (13)

1-41. (Cancelled)
42. A method of forming a semiconductor construction comprising:
forming a first conductive layer over a substrate;
forming a second conductive layer over the first conductive layer;
forming a third conductive layer over the second conductive layer; and
forming a conductive link between the first conductive layer and the third conductive layer, the second conductive layer being electrically insulated from the conductive link.
43. The method of claim 42 further comprising:
prior to forming the conductive link, patterning the second and third conductive layers to form a patterned structure having opposing sidewalls, the sidewalls comprising a first portion defined by exposed second conductive layer and a second portion defined by exposed third conductive layer; and
after the patterning, forming insulative sidewall spacers along the patterned structure, the insulative spacers covering the first portion and partially covering the second portion of the opposing sidewalls.
44. The method of claim 42 wherein the forming the conductive link comprises:
depositing a conductive material over the first, second and third conductive layers; and
subjecting the conductive material to a maskless anisotropic etch.
45. The method of claim 42 further comprising:
providing an insulative material between the first conductive layer and the second conductive layer; and
prior to forming the conductive link, removing a portion of the insulative material to expose an upper surface of the first conductive layer.
46. The method of claim 42 wherein the forming the third conductive layer comprises forming the third conductive layer to overlap the first conductive layer on a first side and underlap the first conductive layer on a second side.
47. A method of forming a semiconductor construction comprising;
providing a substrate having a first conductive layer separated from a second conductive layer by an insulating material layer;
etching the first and second conductive layers to define a pair of opposing sidewalls;
depositing a conductive material over the sidewalls and over an upper surface of the second conductive layer; and
subjecting the conductive material to a maskless anisotropic etch to form conductive sidewall structures electrically linking the first and second conductive layers.
48. The method of claim 47 wherein the first conductive layer is disposed over an insulative region comprised by the substrate.
49. The method of claim 47 wherein the conductive material comprises conductively doped polysilicon.
50. A semiconductor construction comprising:
a first conductive layer over a substrate;
a second conductive layer over the first conductive layer;
a third conductive layer over the second conductive layer; and
a fourth conductive layer in electrical communication with the first and third conductive materials and electrically insulated from the second conductive layer.
51. The semiconductor construction of claim 50 wherein the fourth conductive layer is a conductive sidewall spacer.
52. The semiconductor construction of claim 50 wherein the first, second third and fourth conductive layers are comprised by a transistor device.
53. The semiconductor construction of claim 50 wherein the third conductive layer overlaps the first conductive layer on a first side and underlaps the first conductive layer on a second side.
US10/870,563 1993-05-12 2004-06-16 Electrical interconnection and thin film transistor fabrication methods, and integrated circuitry Abandoned US20040235226A1 (en)

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US08/075,035 US5348899A (en) 1993-05-12 1993-06-10 Method of fabricating a bottom and top gated thin film transistor
US08/236,486 US5493130A (en) 1993-06-10 1994-04-28 Integrated circuitry having an electrically conductive sidewall link positioned over and electrically interconnecting respective outer sidewalls of two conductive layers
US08/561,105 US5650655A (en) 1994-04-28 1995-11-21 Integrated circuitry having electrical interconnects
US08/771,437 US5736437A (en) 1993-05-12 1996-12-20 Method of fabricating a bottom and top gated thin film transistor having an electrical sidewall connection
US09/025,214 US6306696B1 (en) 1993-05-12 1998-02-18 Methods of forming integrated circuitry methods of forming thin film transistors, integrated circuitry and thin film transistors
US09/884,292 US6689649B2 (en) 1993-05-12 2001-06-18 Methods of forming transistors
US10/071,031 US6759285B2 (en) 1993-05-12 2002-02-07 Methods of forming transistors
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US20010034091A1 (en) 2001-10-25
US6479332B2 (en) 2002-11-12
US20050145850A1 (en) 2005-07-07
US6229212B1 (en) 2001-05-08
US20010031520A1 (en) 2001-10-18
US6306696B1 (en) 2001-10-23
US6759285B2 (en) 2004-07-06
US5650655A (en) 1997-07-22
US20020076865A1 (en) 2002-06-20
US6689649B2 (en) 2004-02-10

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