US20030201586A1 - Apparatus and method for supplying cesium using injector - Google Patents
Apparatus and method for supplying cesium using injector Download PDFInfo
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- US20030201586A1 US20030201586A1 US10/147,851 US14785102A US2003201586A1 US 20030201586 A1 US20030201586 A1 US 20030201586A1 US 14785102 A US14785102 A US 14785102A US 2003201586 A1 US2003201586 A1 US 2003201586A1
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- cesium
- gas
- injector
- emitting
- inert gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/20—Means for producing, introducing, or replenishing gas or vapour during operation of the tube or lamp
Definitions
- the present invention relates to an apparatus and method for supplying cesium (Cs), and more particularly, to an apparatus and method for supplying cesium using an injector, which increases vaporization efficiency of cesium and enables a continuous supply of cesium gas for a long period of time.
- Cs cesium
- an ion source is used in ion injection, sputter deposition, ion beam deposition, and ion spectroscopy. More specifically, when sufficient amount of cesium ions exists on the surface of the substrate to be processed, the cesium ions decrease the work function of the surface of the substrate. This is because cesium has a low electron affinity. Therefore, the cesium existing on the surface of the substrate increases an amount of the negative ion emission.
- cesium Under the atmospheric pressure, cesium has a liquid point of 28° C. and a boiling point of 690° C. At 100° C., cesium has a vapor pressure of 10E ⁇ 4 Torr.
- FIG. 1 illustrates a schematic view of the related art apparatus for supplying cesium using solid electrolyte, which is disclosed in U.S. Pat. No. 5,521,389.
- the related art apparatus for supplying cesium using solid electrolyte includes an ion pellet 11 having a cesium compound in the form of an oxide sealed therein, an ion emitter 12 emitting cesium ions from the cesium compound inside the ion pellet 11 when brought into contact with metal, and a heater 13 heating the ion pellet 11 so that cesium ions can be emitted through the ion emitter 12 .
- the related art apparatus for supplying cesium also includes a heat cutoff layer (not shown), which is made of one of molybdenum and tantalum and formed on an outer surface of the heater 13 in order to prevent heat produced from the heater 13 to be radiated to the outside.
- An anode electrode (not shown) for an electrical connection of the ion pellet 11 and a metal tube (not shown) preventing the cesium compound from flowing out of the ion pellet 11 are also included in the apparatus.
- the ion emitter 12 is a porous electrode coated with tungsten on a side surface of the ion pellet 11 .
- the heater 13 formed on the circumference of the ion pellet is made of a filament coated with alumina.
- the solid electrolyte including cesium emits cesium ions at an elevated temperature ranging from 900 to 1000° C.
- the temperature should be maintained at least at 1000° C.
- FIG. 2 illustrates a schematic view of an apparatus for supplying cesium using a refractory metal ribbon, which is disclosed in U.S. Pat. No. 5,466,941. This structure resolves the problems caused in the apparatus for supplying cesium using solid electrolyte.
- the apparatus for supplying cesium using a refractory metal ribbon includes an extraction electrode pair 21 , a refractory metal ribbon 22 ionizing the cesium discharged from the extraction electrode 21 , and an electrode for forming a beam (not shown) formed on the upper and lower portions of the refractory metal ribbon 22 in order to form the positively charged and ionized cesium ions into a beam.
- a heater (not shown) controlling vapor pressure used for discharging non-ionized cesium to the refractory metal ribbon 22 is also included in the apparatus.
- the refractory metal ribbon is formed of tungsten.
- the extraction electrode 21 must be heated at an elevated temperature ranging from 300 to 400° C. in order to discharge non-ionized cesium.
- the refractory metal ribbon 22 must be heated at an elevated temperature of 1200° C. in order to positively charge the discharged cesium.
- the present invention is directed to an apparatus and method for supplying cesium using an injector that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
- Another object of the present invention is to provide an apparatus and method for supplying cesium using an injector whereby cesium vaporization efficiency is increased in order to provide a larger amount of cesium gas.
- Another object of the present invention is to provide an apparatus and method for supplying cesium using an injector, which prevents the cesium from being oxidized or deteriorated, thereby allowing a stable supply of cesium for a long period of time.
- a further object of the present invention is to provide an apparatus and method for supplying cesium using an injector, which can control the supplied amount of cesium with precision.
- an apparatus for supplying cesium by using an injector includes a mass flow controller controlling an amount of an externally introduced inert gas, a pre-heater pre-heating the inert gas introduced through a first gas flow tube from the mass flow controller, a cesium storage unit emitting cesium by using a pressure gas supplied through a pressure gas supplying tube, an injector emitting the cesium supplied from the cesium storage unit, and a cesium vaporizer vaporizing the cesium emitted from the injector and emitting the inert gas introduced from the pre-heater through a second gas flow tube along with the cesium gas through a third gas flow tube.
- externally applied pulse signals allow the injector to emit liquid cesium on a regular basis.
- the injector also controls the size of a cesium particle, the amount of cesium, and the level of spray.
- a method of supplying cesium by using an injector includes controlling an amount of an externally introduced inert gas, pre-heating the inert gas, emitting and vaporizing cesium supplied by a pressure gas, and emitting the vaporized cesium along with the pre-heated inert gas.
- FIG. 1 illustrates a schematic view of a related art apparatus for supplying cesium using solid electrolyte
- FIG. 2 illustrates a schematic view of a related art apparatus for supplying cesium using a refractory metal ribbon
- FIG. 3 illustrates a schematic view of an apparatus for supplying cesium according to the present invention.
- FIG. 3 illustrates a schematic view of an apparatus for supplying cesium according to the present invention.
- the apparatus for supplying cesium by using an injector includes a mass flow controller (MFC) 31 controlling an amount of an externally introduced inert gas, a pre-heater 34 pre-heating the inert gas introduced through a first gas flow tube 32 from the mass flow controller (MFC) 31 and emitting the pre-heated inert gas through a second gas flow tube 33 , a cesium storage unit 36 emitting cesium by using a pressure gas supplied through a pressure gas supplying tube 35 , an injector 37 emitting the cesium supplied from the cesium storage unit 36 , and a cesium vaporizer 39 vaporizing the cesium emitted from the injector 37 and emitting the inert gas introduced from the pre-heater 34 through the second gas flow tube 33 along with the cesium gas through a third gas flow tube 38 .
- MFC mass flow controller
- the apparatus for supplying cesium by using an injector further includes a heater 40 heating the pre-heater 34 , the cesium storage unit 36 , and the cesium vaporizer 39 , a plurality of heating wires heating the first, second, and third gas flow tubes 32 , 33 , and 38 , a first cutoff valve 41 installed within the second gas flow tube 33 and supplying and cutting off the inert gas introduced to the cesium vaporizer, 39 from the pre-heater 34 , and a second cutoff valve 42 installed within the third gas flow tube 38 and supplying and cutting off the cesium gas supplied to a deposition device 43 from the cesium vaporizer 39 , and a pressure gas regulator (not shown) installed within the pressure gas supplying tube 35 and controlling the amount of pressure gas introduced to the cesium storage unit 36 .
- a heater 40 heating the pre-heater 34 , the cesium storage unit 36 , and the cesium vaporizer 39
- a plurality of heating wires heating the first, second, and third gas flow tubes
- a tube 44 connects the cesium storage unit 36 and the injector 37 .
- a heating wire may also be formed on the circumference of the tube 44 in a similar manner as the first, second, and third gas flow tubes 32 , 33 , and 38 .
- argon (Ar) nitrogen (N 2 ) and helium (He) may also be used as an inert gas.
- the inert gas may also be used as a pressure gas supplied to the cesium storage unit 36 .
- the cesium storage unit 36 which is filled with liquid cesium, may be maintained at a temperature of at least 29° C. in order to maintain the cesium in a liquid phase.
- the injector 37 is controlled by pulse signals applied by an external controlling device, wherein an emitter within the injector 37 repeatedly opens and closes so as to emit liquid cesium on a regular basis.
- the apparatus for supplying cesium is not only applicable to a physical vapor deposition system, but also to any vapor deposition system using ion beam, a chemical mechanical vapor deposition system, a display device of an electronic tube a camera tube, an electronic microscope, and a photoelectron generator.
- the mass flow controller 31 controls the amount of the externally introduced inert gas.
- the heater 40 installed on the circumference of the pre-heater 34 pre-heats the inert gas introduced to the pre-heater 34 through the first gas flow tube 32 .
- a pressure gas is supplied to the cesium storage unit 36 , which is filled with liquid cesium.
- the pressure gas supplied through the pressure gas supplying tube 35 emits the liquid cesium with the cesium storage unit 36 to the outside. More specifically, pressure within the cesium storage unit 36 increases as the pressure gas is introduced therein.
- the liquid cesium is then sent to the injector 37 through a tube 44 .
- the amount of liquid cesium sent to the injector 37 from the cesium storage unit 36 may vary according to the amount of pressure gas, which is regulated by the pressure gas regulator.
- the injector 37 receiving cesium from the cesium storage unit 36 periodically emits cesium into the cesium vaporizer 39 in accordance with pulse signals generated from an external power supply.
- the shape and size of the emitter within the injector determine the size of a cesium particle, the amount of cesium, and the area of cesium spray. Therefore, in order to obtain a desired amount of cesium and area of cesium spray, an adequate size and shape should be selected for the emitter in the injector.
- the vaporized cesium is then discharged through the third gas flow tube 38 along with the pre-heated inert gas introduced from the pre-heater 34 , and finally supplied to the deposition device 43 .
- the heater 40 heats the cesium vaporizer 39 to a temperature ranging from about 200 to 300° C. and vaporizes the cesium.
- the heating wires maintain the first, second, and third gas flow tubes 32 , 33 , and 38 at about the same temperature as the cesium vaporizer 39 .
- the above-described apparatus for supplying cesium according to the present invention uses the pressure gas regulator to regulate the amount of cesium supplied to the injector 37 , thereby regulating with precision the amount of cesium gas supplied to the deposition device 43 . Additionally, by vaporizing the fine particles of the liquid cesium emitted from the injector 37 , vaporization efficiency of cesium may be enhanced.
- the emitted amount of cesium gas depends highly on the amount of supplied cesium gas, more specifically, the pressure of the pressure gas, the viscosity of cesium, and the pulse signals of the injector, and the degree of cesium vaporization.
- the degree of cesium vaporization relies on the size of liquid cesium particles, the area of spray, and the heating temperature.
- first, second, and third gas flow tubes 32 , 33 , and 38 are maintained at a high temperature, thereby preventing clogging of the tubes caused by an oxidation of cesium.
- high quality cesium gas may be supplied to a vacuum system (i.e., a deposition device 43 ), thereby facilitating the production of negatively charged ions on to a substrate to be treated.
- cesium gas is supplied to the deposition device along with the inert gas, which prevents the counter flow of oxygen or other oxidizing substances therein.
- cesium can be used stably for a long period of time without being deteriorated.
- the above-described apparatus for supplying cesium according to the present invention has the following advantages.
- An injector emitting liquid cesium is installed within the apparatus for supplying cesium in order to vaporize the fine cesium particles, thereby increasing vaporization efficiency. Accordingly, a large amount of cesium gas can be supplied to the deposition device.
- a pressure gas regulator regulates the amount of pressure gas supplied to the cesium storage unit, which allows the regulation of the amount of liquid cesium supplied to the injector.
- the pulse signals control the degree of opening and closing of the injector. As a result, the amount of cesium gas supplied to the deposition device can be regulated.
- a heater or a plurality of heating wires are installed, so that the temperature of the entire system including a pre-heater, a cesium vaporizer, and gas flow tubes is readily controlled and maintained. Also, an inert gas is supplied to a deposition device along with cesium gas, which prevents the cesium from being oxidized. Thus, cesium gas may be stably supplied for a long period of time without being deteriorated.
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Abstract
An apparatus and method for supplying cesium by using an injector is disclosed in the present invention, which increases vaporization efficiency and stably supplies cesium gas for a long period of time. The apparatus includes a mass flow controller controlling an amount of an externally introduced inert gas, a pre-heater pre-heating the inert gas introduced through a first gas flow tube from the mass flow controller, a cesium storage unit emitting cesium by using a pressure gas supplied through a pressure gas supplying tube, an injector emitting the cesium supplied from the cesium storage unit, and a cesium vaporizer vaporizing the cesium emitted from the injector and emitting the inert gas introduced from the pre-heater through a second gas flow tube along with the cesium gas through a third gas flow tube. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Description
- This application claims the benefit of the Korean Application No. P2002-23379 filed on Apr. 29, 2002, which is hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to an apparatus and method for supplying cesium (Cs), and more particularly, to an apparatus and method for supplying cesium using an injector, which increases vaporization efficiency of cesium and enables a continuous supply of cesium gas for a long period of time.
- 2. Discussion of the Related Art
- Generally, an ion source is used in ion injection, sputter deposition, ion beam deposition, and ion spectroscopy. More specifically, when sufficient amount of cesium ions exists on the surface of the substrate to be processed, the cesium ions decrease the work function of the surface of the substrate. This is because cesium has a low electron affinity. Therefore, the cesium existing on the surface of the substrate increases an amount of the negative ion emission.
- Under the atmospheric pressure, cesium has a liquid point of 28° C. and a boiling point of 690° C. At 100° C., cesium has a vapor pressure of 10E−4 Torr.
- However, cesium is easily oxidized when it is exposed to oxygen. Moreover, cesium explodes when it is brought into contact with humidity. Therefore, vapor pressure of cesium cannot be controlled easily, which results in many limitations in the application of cesium.
- A related art apparatus for supplying cesium will be described with reference to the accompanying drawings.
- FIG. 1 illustrates a schematic view of the related art apparatus for supplying cesium using solid electrolyte, which is disclosed in U.S. Pat. No. 5,521,389.
- As shown in FIG. 1, the related art apparatus for supplying cesium using solid electrolyte includes an
ion pellet 11 having a cesium compound in the form of an oxide sealed therein, anion emitter 12 emitting cesium ions from the cesium compound inside theion pellet 11 when brought into contact with metal, and aheater 13 heating theion pellet 11 so that cesium ions can be emitted through theion emitter 12. - The related art apparatus for supplying cesium also includes a heat cutoff layer (not shown), which is made of one of molybdenum and tantalum and formed on an outer surface of the
heater 13 in order to prevent heat produced from theheater 13 to be radiated to the outside. An anode electrode (not shown) for an electrical connection of theion pellet 11 and a metal tube (not shown) preventing the cesium compound from flowing out of theion pellet 11 are also included in the apparatus. - Herein, the
ion emitter 12 is a porous electrode coated with tungsten on a side surface of theion pellet 11. Also, theheater 13 formed on the circumference of the ion pellet is made of a filament coated with alumina. - As described above, in the related art apparatus for supplying cesium using solid electrolyte, the solid electrolyte including cesium emits cesium ions at an elevated temperature ranging from 900 to 1000° C. For an effective emission of the electrodes, the temperature should be maintained at least at 1000° C.
- Due to a limited amount of solid electrolyte sealed within the
ion pellet 11, this type of cesium source is not desirable for a long-term use. Particularly, ion beam flux is limited. Therefore, it is difficult to carry out a deposition process on a wide surface. - In addition, when the
ion pellet 11 is used under an oxygen environment for a long period of time, an oxide layer is formed on theporous ion emitter 12 due to oxidation of cesium, which results in an instability in the discharged amount of cesium ions. Therefore, in order to accurately control the discharged amount of cesium ions, an apparatus that can control the heating of theion pellet 11 by measuring the discharged amount is required. When using the apparatus for supplying cesium in a physical vapor deposition process, cesium produced by a high temperature heating process is only diffused by a thermal kinetic movement of gas within a vacuum. Therefore, the flux cannot be controlled. - FIG. 2 illustrates a schematic view of an apparatus for supplying cesium using a refractory metal ribbon, which is disclosed in U.S. Pat. No. 5,466,941. This structure resolves the problems caused in the apparatus for supplying cesium using solid electrolyte.
- As shown in FIG. 2, the apparatus for supplying cesium using a refractory metal ribbon includes an
extraction electrode pair 21, arefractory metal ribbon 22 ionizing the cesium discharged from theextraction electrode 21, and an electrode for forming a beam (not shown) formed on the upper and lower portions of therefractory metal ribbon 22 in order to form the positively charged and ionized cesium ions into a beam. - A heater (not shown) controlling vapor pressure used for discharging non-ionized cesium to the
refractory metal ribbon 22 is also included in the apparatus. Herein, the refractory metal ribbon is formed of tungsten. - However, in the apparatus for supplying cesium using a refractory metal ribbon with the above structure, the
extraction electrode 21 must be heated at an elevated temperature ranging from 300 to 400° C. in order to discharge non-ionized cesium. Furthermore, therefractory metal ribbon 22 must be heated at an elevated temperature of 1200° C. in order to positively charge the discharged cesium. - Accordingly, the present invention is directed to an apparatus and method for supplying cesium using an injector that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
- Another object of the present invention is to provide an apparatus and method for supplying cesium using an injector whereby cesium vaporization efficiency is increased in order to provide a larger amount of cesium gas.
- Another object of the present invention is to provide an apparatus and method for supplying cesium using an injector, which prevents the cesium from being oxidized or deteriorated, thereby allowing a stable supply of cesium for a long period of time.
- A further object of the present invention is to provide an apparatus and method for supplying cesium using an injector, which can control the supplied amount of cesium with precision.
- Additional features and advantages of the invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, an apparatus for supplying cesium by using an injector includes a mass flow controller controlling an amount of an externally introduced inert gas, a pre-heater pre-heating the inert gas introduced through a first gas flow tube from the mass flow controller, a cesium storage unit emitting cesium by using a pressure gas supplied through a pressure gas supplying tube, an injector emitting the cesium supplied from the cesium storage unit, and a cesium vaporizer vaporizing the cesium emitted from the injector and emitting the inert gas introduced from the pre-heater through a second gas flow tube along with the cesium gas through a third gas flow tube.
- Herein, externally applied pulse signals allow the injector to emit liquid cesium on a regular basis. The injector also controls the size of a cesium particle, the amount of cesium, and the level of spray.
- In another aspect of the present invention, a method of supplying cesium by using an injector includes controlling an amount of an externally introduced inert gas, pre-heating the inert gas, emitting and vaporizing cesium supplied by a pressure gas, and emitting the vaporized cesium along with the pre-heated inert gas.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and together with the description serve to explain the principle of the invention.
- In the drawings:
- FIG. 1 illustrates a schematic view of a related art apparatus for supplying cesium using solid electrolyte;
- FIG. 2 illustrates a schematic view of a related art apparatus for supplying cesium using a refractory metal ribbon; and
- FIG. 3 illustrates a schematic view of an apparatus for supplying cesium according to the present invention.
- Reference will now be made in detail to the illustrated embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
- FIG. 3 illustrates a schematic view of an apparatus for supplying cesium according to the present invention.
- As shown in FIG. 3, the apparatus for supplying cesium by using an injector includes a mass flow controller (MFC)31 controlling an amount of an externally introduced inert gas, a pre-heater 34 pre-heating the inert gas introduced through a first
gas flow tube 32 from the mass flow controller (MFC) 31 and emitting the pre-heated inert gas through a secondgas flow tube 33, acesium storage unit 36 emitting cesium by using a pressure gas supplied through a pressuregas supplying tube 35, aninjector 37 emitting the cesium supplied from thecesium storage unit 36, and acesium vaporizer 39 vaporizing the cesium emitted from theinjector 37 and emitting the inert gas introduced from thepre-heater 34 through the secondgas flow tube 33 along with the cesium gas through a thirdgas flow tube 38. - In addition, the apparatus for supplying cesium by using an injector according to the present invention further includes a
heater 40 heating the pre-heater 34, thecesium storage unit 36, and thecesium vaporizer 39, a plurality of heating wires heating the first, second, and thirdgas flow tubes first cutoff valve 41 installed within the secondgas flow tube 33 and supplying and cutting off the inert gas introduced to the cesium vaporizer, 39 from the pre-heater 34, and asecond cutoff valve 42 installed within the thirdgas flow tube 38 and supplying and cutting off the cesium gas supplied to adeposition device 43 from thecesium vaporizer 39, and a pressure gas regulator (not shown) installed within the pressuregas supplying tube 35 and controlling the amount of pressure gas introduced to thecesium storage unit 36. - Herein, a two-stage pressure regulator is used as the pressure gas regulator. A
tube 44 connects thecesium storage unit 36 and theinjector 37. A heating wire may also be formed on the circumference of thetube 44 in a similar manner as the first, second, and thirdgas flow tubes - In addition to argon (Ar), nitrogen (N2) and helium (He) may also be used as an inert gas. The inert gas may also be used as a pressure gas supplied to the
cesium storage unit 36. Thecesium storage unit 36, which is filled with liquid cesium, may be maintained at a temperature of at least 29° C. in order to maintain the cesium in a liquid phase. - The
injector 37 is controlled by pulse signals applied by an external controlling device, wherein an emitter within theinjector 37 repeatedly opens and closes so as to emit liquid cesium on a regular basis. - The apparatus for supplying cesium is not only applicable to a physical vapor deposition system, but also to any vapor deposition system using ion beam, a chemical mechanical vapor deposition system, a display device of an electronic tube a camera tube, an electronic microscope, and a photoelectron generator.
- The operation of the above-described apparatus for supplying cesium of the present invention will now be explained.
- The
mass flow controller 31 controls the amount of the externally introduced inert gas. Theheater 40 installed on the circumference of the pre-heater 34 pre-heats the inert gas introduced to the pre-heater 34 through the firstgas flow tube 32. - A pressure gas is supplied to the
cesium storage unit 36, which is filled with liquid cesium. At this point, the pressure gas supplied through the pressuregas supplying tube 35 emits the liquid cesium with thecesium storage unit 36 to the outside. More specifically, pressure within thecesium storage unit 36 increases as the pressure gas is introduced therein. The liquid cesium is then sent to theinjector 37 through atube 44. - Herein, the amount of liquid cesium sent to the
injector 37 from thecesium storage unit 36 may vary according to the amount of pressure gas, which is regulated by the pressure gas regulator. - The
injector 37 receiving cesium from thecesium storage unit 36 periodically emits cesium into thecesium vaporizer 39 in accordance with pulse signals generated from an external power supply. Herein, the shape and size of the emitter within the injector determine the size of a cesium particle, the amount of cesium, and the area of cesium spray. Therefore, in order to obtain a desired amount of cesium and area of cesium spray, an adequate size and shape should be selected for the emitter in the injector. - When the fine particles of cesium are emitted from the
injector 37 reach the inner surface of theheated cesium vaporizer 39, the cesium is vaporized by an instantaneous heating process. Due to the instantaneous vaporization of cesium, the pressure within thecesium vaporizer 39 increases instantaneously as well. The degree of cesium vaporization increases in accordance with the small size of the emitted cesium particles and the large area of spray. - The vaporized cesium is then discharged through the third
gas flow tube 38 along with the pre-heated inert gas introduced from the pre-heater 34, and finally supplied to thedeposition device 43. - Herein, the
heater 40 heats thecesium vaporizer 39 to a temperature ranging from about 200 to 300° C. and vaporizes the cesium. The heating wires maintain the first, second, and thirdgas flow tubes cesium vaporizer 39. - The above-described apparatus for supplying cesium according to the present invention uses the pressure gas regulator to regulate the amount of cesium supplied to the
injector 37, thereby regulating with precision the amount of cesium gas supplied to thedeposition device 43. Additionally, by vaporizing the fine particles of the liquid cesium emitted from theinjector 37, vaporization efficiency of cesium may be enhanced. - More specifically, the emitted amount of cesium gas depends highly on the amount of supplied cesium gas, more specifically, the pressure of the pressure gas, the viscosity of cesium, and the pulse signals of the injector, and the degree of cesium vaporization. The degree of cesium vaporization relies on the size of liquid cesium particles, the area of spray, and the heating temperature.
- In addition, the first, second, and third
gas flow tubes - Furthermore, cesium gas is supplied to the deposition device along with the inert gas, which prevents the counter flow of oxygen or other oxidizing substances therein. Thus, cesium can be used stably for a long period of time without being deteriorated.
- More specifically, in comparison with the related art, when vaporizing cesium by using the apparatus for supplying cesium according to the present invention, a larger amount of cesium gas may be stably and continuously supplied for a long period of time.
- The above-described apparatus for supplying cesium according to the present invention has the following advantages.
- An injector emitting liquid cesium is installed within the apparatus for supplying cesium in order to vaporize the fine cesium particles, thereby increasing vaporization efficiency. Accordingly, a large amount of cesium gas can be supplied to the deposition device.
- A pressure gas regulator regulates the amount of pressure gas supplied to the cesium storage unit, which allows the regulation of the amount of liquid cesium supplied to the injector. The pulse signals control the degree of opening and closing of the injector. As a result, the amount of cesium gas supplied to the deposition device can be regulated.
- A heater or a plurality of heating wires are installed, so that the temperature of the entire system including a pre-heater, a cesium vaporizer, and gas flow tubes is readily controlled and maintained. Also, an inert gas is supplied to a deposition device along with cesium gas, which prevents the cesium from being oxidized. Thus, cesium gas may be stably supplied for a long period of time without being deteriorated.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the apparatus and method for supplying cesium by using an injector of the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (16)
1. An apparatus for supplying cesium by using an injector, comprising:
a mass flow controller controlling an amount of an externally introduced inert gas;
a pre-heater pre-heating the inert gas introduced through a first gas flow tube from the mass flow controller;
a cesium storage unit emitting cesium by using a pressure gas supplied through a pressure gas supplying tube;
an injector emitting the cesium supplied from the cesium storage unit; and
a cesium vaporizer vaporizing the cesium emitted from the injector and emitting the inert gas introduced from the pre-heater through a second gas flow tube along with the cesium gas through a third gas flow tube.
2. The apparatus according to claim 1 , wherein the injector is controlled by externally applied pulse signals.
3. The apparatus according to claim 1 , wherein the injector regulates a size of a cesium particle, an amount of cesium, and an area of cesium spray.
4. The apparatus according to claim 1 , wherein the inert gas includes one of argon, nitrogen, and helium.
5. The apparatus according to claim 1 , wherein the cesium storage unit is filled with liquid cesium.
6. The apparatus according to claim 1 , wherein an inside of the cesium storage unit is maintained at a temperature of at least 29° C.
7. The apparatus according to claim 1 , wherein the cesium vaporizer is maintained at a temperature ranging from about 200 to 300° C.
8. The apparatus according to claim 1 , wherein the pressure gas is formed of an inert gas.
9. The apparatus according to claim 8 , wherein the inert gas is formed of nitrogen.
10. The apparatus according to claim 1 , further comprising a heater heating the pre-heater, the cesium storage unit, and the cesium vaporizer.
11. The apparatus according to claim 1 , further including a plurality of heating wires heating the first, second, and third gas flow tubes.
12. The apparatus according to claim 1 , further including a valve installed within both the second and third gas flow tubes in order to control an amount of cesium flowing therein.
13. The apparatus according to claim 1 , further including a pressure gas regulator regulating an amount of pressure gas introduced to the cesium storage unit.
14. The method for supplying cesium by using an injector, comprising:
controlling an amount of an externally introduced inert gas;
pre-heating the inert gas;
emitting and vaporizing cesium supplied by a pressure gas; and
emitting the vaporized cesium along with the pre-heated inert gas.
15. The method according to claim 14 , wherein the cesium in the emitting and vaporizing cesium supplied by a pressure gas is emitted on a regular basis.
16. The method according to claim 14 , wherein an amount of the pressure gas in the emitting and vaporizing cesium supplied by a pressure gas is controlled in order to regulate an amount of cesium to be emitted.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020023379A KR20030085198A (en) | 2002-04-29 | 2002-04-29 | Apparatus and method for supplying cesium |
KRP2002-0023379 | 2002-04-29 |
Publications (1)
Publication Number | Publication Date |
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US20030201586A1 true US20030201586A1 (en) | 2003-10-30 |
Family
ID=29244804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/147,851 Abandoned US20030201586A1 (en) | 2002-04-29 | 2002-05-20 | Apparatus and method for supplying cesium using injector |
Country Status (2)
Country | Link |
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US (1) | US20030201586A1 (en) |
KR (1) | KR20030085198A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107385376A (en) * | 2017-08-04 | 2017-11-24 | 华中科技大学 | One kind spray caesium device |
US11152127B2 (en) | 2017-03-29 | 2021-10-19 | Terrapower Llc | Method of replacing cesium trap and cesium trap assembly thereof |
US11257600B2 (en) | 2016-05-20 | 2022-02-22 | Terrapower, Llc | Sodium-cesium vapor trap system and method |
US11501883B2 (en) | 2016-03-08 | 2022-11-15 | Terrapower, Llc | Fission product getter |
US11626213B2 (en) | 2019-08-23 | 2023-04-11 | Terrapower, Llc | Sodium vaporizer and methods |
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US4092534A (en) * | 1976-11-19 | 1978-05-30 | The United States Of America As Represented By The United States Department Of Energy | Charge exchange system |
US20030127053A1 (en) * | 2002-01-04 | 2003-07-10 | Filteray Fiber Optics, Inc. | Apparatus and method for supplying cesium |
US20030146088A1 (en) * | 2002-02-01 | 2003-08-07 | Filteray Fiber Optics, Inc. | Apparatus and method for forming optical coating using negatively charged ions |
-
2002
- 2002-04-29 KR KR1020020023379A patent/KR20030085198A/en not_active Application Discontinuation
- 2002-05-20 US US10/147,851 patent/US20030201586A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4092534A (en) * | 1976-11-19 | 1978-05-30 | The United States Of America As Represented By The United States Department Of Energy | Charge exchange system |
US20030127053A1 (en) * | 2002-01-04 | 2003-07-10 | Filteray Fiber Optics, Inc. | Apparatus and method for supplying cesium |
US20030146088A1 (en) * | 2002-02-01 | 2003-08-07 | Filteray Fiber Optics, Inc. | Apparatus and method for forming optical coating using negatively charged ions |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11501883B2 (en) | 2016-03-08 | 2022-11-15 | Terrapower, Llc | Fission product getter |
US11776701B2 (en) | 2016-03-08 | 2023-10-03 | Terrapower, Llc | Fission product getter formed by additive manufacturing |
US11257600B2 (en) | 2016-05-20 | 2022-02-22 | Terrapower, Llc | Sodium-cesium vapor trap system and method |
US11152127B2 (en) | 2017-03-29 | 2021-10-19 | Terrapower Llc | Method of replacing cesium trap and cesium trap assembly thereof |
US11842819B2 (en) | 2017-03-29 | 2023-12-12 | Terrapower, Llc | Method for replacing a cesium trap and cesium trap assembly thereof |
CN107385376A (en) * | 2017-08-04 | 2017-11-24 | 华中科技大学 | One kind spray caesium device |
US11626213B2 (en) | 2019-08-23 | 2023-04-11 | Terrapower, Llc | Sodium vaporizer and methods |
Also Published As
Publication number | Publication date |
---|---|
KR20030085198A (en) | 2003-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: FILTERAY FIBER OPTICS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KIM, DAESIG;REEL/FRAME:012919/0374 Effective date: 20020516 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |