JP7084201B2 - Reactive ion plating equipment and method - Google Patents

Description

The present invention relates to a reactive ion plating apparatus and method, and in particular, a reaction film obtained by reacting particles of an evaporative material with particles of a reactive gas to form a compound of the particles of the evaporative material and the particles of the reactive gas. The present invention relates to a reactive ion plating apparatus and method for forming the surface of an object to be treated.

In this type of reactive ion plating apparatus and method, in order to form the desired reaction film with good reproducibility (that is, constant quality), the formation rate of the reaction film (so-called film formation rate) is set. It is important to perform appropriate control so that it becomes constant. For example, in Patent Document 1, the formation rate of the reaction film is detected by a crystal oscillator type film thickness monitor as a film formation rate detection means, and the evaporative material is used so that the detection value by the film film monitor is constant. Techniques for controlling the evaporation rate are disclosed.

Japanese Unexamined Patent Publication No. 2013-60649

However, as described above, in the technique disclosed in Patent Document 1 using a crystal oscillator type film thickness monitor as a film forming rate detecting means, a reaction in which the film thickness is relatively large, for example, the film thickness is 5 μm or more. There is a problem that the film cannot be formed with good reproducibility. That is, in the technique disclosed in Patent Document 1, when the film thickness of the reaction film attached to the crystal oscillator of the film thickness monitor becomes large, the reaction film is easily peeled off due to its own internal stress. Then, when the reaction film attached to the crystal oscillator of the film thickness monitor is peeled off, the film film monitor is in a so-called crystal fail state in which the life of the crystal oscillator has expired. In that case, it becomes impossible to detect the formation rate of the reaction film by the film thickness monitor, and as a result, it becomes impossible to control the formation rate of the reaction film to be constant. Therefore, the technique disclosed in Patent Document 1 using such a crystal oscillator type film thickness monitor cannot form a reaction film having a relatively large film thickness with good reproducibility. When the target object is a single element film composed of a single element, even if the single element film adheres to the crystal oscillator of the film thickness monitor, it is difficult to peel off, so that such a problem occurs. do not have.

Therefore, an object of the present invention is to provide a novel reactive ion plating apparatus and method capable of forming a reaction membrane having a large film thickness with good reproducibility.

In order to achieve this object, the present invention includes a first invention relating to a reactive ion plating apparatus and a second invention relating to a reactive ion plating method.

In the first invention, the particles of the evaporative material and the particles of the reactive gas are reacted to form a reaction film, which is a compound of the particles of the evaporative material and the particles of the reactive gas, on the surface of the object to be treated. It is a reactive ion plating apparatus to be formed and includes a vacuum chamber. An object to be processed is arranged inside this vacuum chamber. Then, the inside of the vacuum chamber is exhausted. Further, the vacuum chamber itself is grounded. Further, the first invention includes an accommodating means, an evaporation means, an ionization means, a gas supply means, and an evaporation control means. The accommodating means is arranged below the object to be processed inside the vacuum chamber to accommodate the evaporative material. Further, the accommodating means is grounded. The evaporating means evaporates the evaporative material contained in the accommodating means. The ionization means ionizes the particles of the evaporative material evaporated by the evaporation means. The gas supply means supplies the reactive gas to the inside of the vacuum chamber at a constant flow rate. Then, the evaporation control means controls the evaporation rate of the evaporation material by the evaporation means so that the pressure inside the vacuum chamber becomes constant.

The ionization means include a hot cathode, an anode, and an ionization power supply means . The hot cathode is arranged between the accommodating means and the object to be processed inside the vacuum chamber, and emits thermions. The anode is arranged inside the vacuum chamber, separated from the hot cathode. Then, the ionization power supply means supplies DC ionization power for accelerating the thermions emitted from the hot cathode toward the anode to the hot cathode and the anode.

The anode referred to here is composed of accommodating means. In other words, the accommodating means functions as an anode, that is, is also used as the anode.

In the first invention, the thermionic quantity control means may be further provided. The thermionic amount controlling means controls the amount of thermionic emissions by the hot cathode so that the current flowing through the accommodating means as the anode is constant.

In addition, in the first invention, the bias power supply means may be provided. This bias power supply means supplies bias power for incidenting particles of the ionized evaporative material onto the surface of the object to be processed. Further, the present invention may be applied to an ion plating apparatus that forms an insulating film as a reaction film.

In the second invention of the present invention, the particles of the evaporative material and the particles of the reactive gas are reacted to form a reaction film which is a compound of the particles of the evaporative material and the particles of the reactive gas. A reactive ion plating method formed on the surface, comprising an evaporation step. In this evaporation step, in the inside of the vacuum chamber where the object to be processed is placed inside and the inside is exhausted, the accommodating means arranged below the object to be processed and grounded is used. Evaporate the contained evaporative material. Further, the second invention includes an ionization step, a gas supply step, and an evaporation control step. In the ionization step, the particles of the evaporative material evaporated by the evaporation step are ionized. In the gas supply step, the reactive gas is supplied to the inside of the vacuum chamber at a constant flow rate. Then, in the evaporation control step, the evaporation rate of the evaporated material by the evaporation step is controlled so that the pressure at a predetermined place inside the vacuum chamber becomes constant. In addition, the ionization step includes a thermionic emission step and an ionization power supply step. In the ionization step, thermions are emitted from the hot cathode arranged between the accommodating means and the object to be processed inside the vacuum chamber. Then, in the ionization power supply step, the DC ionizing power for accelerating the thermions emitted from the hot cathode toward the accommodating means is generated by the accommodating means as an anode and the hot cathode as a cathode, with these accommodating means and heat. Supply to the cathode.

According to the present invention, in a reactive ion plating apparatus and method, a reaction membrane having a large film thickness can be formed with good reproducibility.

FIG. 1 is a diagram showing a schematic configuration of an ion plating apparatus according to a first embodiment of the present invention. FIG. 2 shows, in the first embodiment, the pressure in a vacuum chamber in which titanium as an evaporative material is evaporating, the flow rate of nitrogen gas as a reactive gas supplied in the vacuum chamber, and the evaporating means. It is a figure which shows the relationship with the emission current of an electron gun. FIG. 3 is a diagram showing the relationship between the evaporation rate of titanium as an evaporation material and the formation rate of a titanium nitride film as a reaction film with respect to the flow rate of nitrogen gas supplied into the vacuum chamber in the first embodiment. FIG. 4 is a diagram showing a list of experimental results regarding the reproducibility of the titanium nitride film in the first embodiment. FIG. 5 is a graph showing the evaporation amount of titanium and the film thickness of the titanium nitride film among the experimental results in the first embodiment. FIG. 6 is a graph showing the processing temperature and the hardness of the titanium nitride film during the film forming process among the experimental results in the first embodiment. FIG. 7 is a graph showing the color tone of the titanium nitride film among the experimental results in the first embodiment. FIG. 8 is a diagram showing the analysis results of the titanium nitride film formed by the experiment in the first embodiment by the X-ray diffraction method. FIG. 9 shows the pressure in the vacuum chamber in which yttrium as the evaporative material is evaporating and the flow rate of the oxygen gas as the reactive gas supplied in the vacuum chamber in the second embodiment of the present invention. It is a figure which shows the relationship with the emission current of an electron gun. FIG. 10 is a diagram showing the relationship between the formation rate of the yttrium film as the reaction film and the flow rate of the oxygen gas supplied in the vacuum chamber in the second embodiment.

[First Example]
The first embodiment of the present invention will be described with reference to FIGS. 1 to 8.

As shown in FIG. 1, the reactive ion plating apparatus 10 according to the first embodiment includes a vacuum chamber 12 having a substantially cylindrical shape. The vacuum chamber 12 is made of a metal having a relatively high mechanical strength and high corrosion resistance and high heat resistance, for example, stainless steel such as SUS304. The vacuum chamber 12 itself, that is, the wall portion of the vacuum chamber 12 is grounded. The diameter (inner diameter) in the vacuum chamber 12 is, for example, about 700 mm. The height dimension inside the vacuum chamber 12 is, for example, about 1000 mm. The upper portion of the vacuum chamber 12 is formed in a substantially dome shape that is convex upward in order to improve the mechanical strength of the vacuum chamber 12.

Further, an exhaust port 12a is provided at an appropriate position on the wall of the vacuum chamber 12, for example, at the bottom. The exhaust port 12a is coupled to a vacuum pump 16 as an exhaust means via an exhaust pipe 14 outside the vacuum tank 12. As the vacuum pump 16, for example, a diffusion pump, a turbo molecular pump or a cryopump is adopted, but the vacuum pump 16 is not limited to this.

Focusing on the inside of the vacuum chamber 12, the evaporation source 18 is arranged at a position near the bottom in the vacuum chamber 12. The evaporation source 18 has a substantially cup-shaped (specifically, a substantially cylindrical shape with an open top) crucible 20 and a 270 ° deflection type electron gun 22 as accommodation means. Of these, the crucible 20 is made of copper (Cu), for example, and contains an evaporation material 24 which is a material for a reaction film described later. Although detailed illustration is omitted, a hearth liner having a shape and dimensions suitable for the crucible 20 is provided in the crucible 20. Then, the evaporation material 24 is housed in this hearth liner. Such hearthliners are formed of high melting point metals such as tantalum (Ta).

On the other hand, the electron gun 22 is an example of an evaporation means for heating and evaporating the evaporation material 24 housed in the crucible 20 (hasliner), and strictly speaking, the electron gun power supply device provided outside the vacuum chamber 12. In cooperation with 26, the evaporation means is constructed. That is, the electron gun 22 receives the power supplied from the electron gun power supply device 26 to generate the electron beam 22a. The electron beam 22a is deflected by 270 ° and irradiates the evaporative material 24 in the crucible 20. As a result, the evaporation material 24 is heated and evaporates. The output Wg of the electron gun 22 is, for example, 10 kW at the maximum. Further, in FIG. 1, for convenience, the electric power from the electron gun power supply device 26 is shown to be supplied to the housing of the evaporation source 18, but in reality, the electric power from the electron gun power supply device 26 is shown. Is supplied to the electron gun 22. Further, although detailed illustration is omitted, the evaporation source 18 is provided with a water-cooled cooling mechanism for preventing overheating of the crucible 20. The housing of the evaporation source 18 is grounded including the crucible 20.

A substrate 28 as an object to be processed is arranged above such an evaporation source 18. The substrate 28 serves as a holding means on the surface thereof, strictly speaking, with the surface to be treated on which the reaction film is formed, which will be described later, facing the evaporation source 18, especially the opening of the crucible 20. It is held by the substrate base 30. The distance from the surface to be treated of the substrate 28 to the evaporation source 18, strictly speaking, the distance to the opening of the crucible 20 depends on various conditions such as the shape and dimensions of the surface to be treated of the substrate 28, but for example. It is 250 mm to 700 mm.

The board base 30 is connected to a board bias power supply device 32 as a bias power supply means outside the vacuum chamber 12. The board bias power supply device 32 supplies the board bias power Wb as the bias power to the board base 30. In this substrate bias power Wb, the substrate bias voltage Vb, which is a voltage component thereof, alternates between a high level voltage having a positive potential based on the ground potential and a low level voltage having a negative potential based on the ground potential. This is the so-called bipolar pulse power that transitions. The high level voltage of this substrate bias voltage Vb is constant, for example, + 37V with respect to the ground potential. On the other hand, the low level voltage of the substrate bias voltage Vb can be arbitrarily changed, and the average value (DC conversion value) of the substrate bias voltage Vb is arbitrarily adjusted by this low level voltage. Further, the frequency of the substrate bias power Wb can also be arbitrarily changed within the range of, for example, 50 kW to 250 kW. The duty ratio of the substrate bias power Wb (the ratio of the period during which the substrate bias voltage Vb becomes the high level voltage in one cycle of the substrate bias voltage Vb) can also be arbitrarily changed. Here, the frequency of the substrate bias power Wb is, for example, 100 kHz, and the duty ratio of the substrate bias power Wb is, for example, 30%.

Further, the filament 34 for thermionic emission as a hot cathode is located between the evaporation source 18 and the substrate base 30 at a position closer to the evaporation source 18, in other words, at a position slightly above the opening of the crucible 20. Is placed. Specifically, the filament 34 is, for example, a linear body made of tungsten (W) having a diameter of 1 mm, and extends horizontally at a position separated from the opening of the crucible 20 by about 10 mm to 90 mm. It is provided in. Strictly speaking, the filament 34 is formed in a spiral shape in order to increase the surface area thereof and efficiently emit thermions described later. The spiral diameter of the spirally formed filament 34 is, for example, 6 mm, the number of turns is, for example, 10 (turns), and the length dimension of the spirally formed portion is, for example, 40 mm.

Both ends of the filament 34 are connected to a filament heating power supply device 36 as a hot cathode heating power supply means outside the vacuum chamber 12. The filament heating power supply device 36 supplies AC power as the filament heating power Wf to the filament 34. Upon receiving the supply of the filament heating power Wf, the filament 34 is heated to emit thermions. The capacity of the filament heating power supply device 36 is, for example, 2.4 kW (= 40 V × 60 A) at the maximum. The filament heating power Wf may be DC power instead of AC power. In any case, the filament heating power supply device 36 only needs to be able to heat the filament 34 to such an extent that thermions are emitted from the filament 34, for example, about 2000 ° C to 2500 ° C. Further, the filament 34 is not limited to the one made of tungsten, and may be made of a refractory metal other than the tungsten such as molybdenum (Mo) or tantalum.

In addition, one end of the filament 34 is connected to an ionization power supply 38 as an ionization power supply means outside the vacuum chamber 12. The ionization power supply device 38 uses the grounded evaporation source 18 as an anode and the filament 34 as a cathode, and supplies DC ionization power Wd to both of them. The capacity of the ionization power supply device 38 is, for example, 9 kW (= 60 V × 150 A) at the maximum.

Further, a current detecting device 40 as an ion current detecting means is provided between the ionization power supply device 38 and the ground. The current detection device 40 detects the current component of the ionization power Wd, that is, the ionization current Id flowing through the ionization power supply device 38. The detected value of the ionization current Id by the current detecting device 40 is given to the heating control device 42 as the thermionic amount control means. The heating control device 42 controls the filament heating power supply device 36 so that the detection value of the ionization current Id by the current detection device 40 is constant, that is, the ionization current Id is constant. Thereby, the heating temperature of the filament 34, that is, the amount of thermionic emission by the filament 34 is appropriately adjusted.

Further, a shutter 44 is provided between the filament 34 and the substrate base 30 in the vacuum chamber 12, specifically at a position closer to the filament 34. The shutter 44 has an open state in which the surface to be processed of the substrate 28 is exposed toward the opening of the crucible 20 and the surface to be processed of the substrate 28 is shielded from the opening of the crucible 20 by a shutter drive mechanism (not shown). It selectively transitions to the closed state. The shutter 44 has relatively high mechanical strength, high corrosion resistance and high heat resistance, and is made of a non-magnetic metal such as stainless steel such as SUS304. Further, the shutter 44 is in a state of being electrically insulated from other components such as the vacuum chamber 12, that is, in a state of being electrically suspended (floating state). The distance from the shutter 44 (lower surface) to the opening of the crucible 20 is, for example, about 100 mm.

Then, to supply the discharge cleaning gas and the reactive gas into the vacuum chamber 12 at appropriate positions on the wall portion of the vacuum chamber 12, for example, at a position above the shutter 44 and below the substrate base 30. A gas supply pipe 46 is provided. Although detailed illustration is omitted, the gas supply pipe 46 has a gas ejection hole on the tip end side thereof, the tip end portion side is positioned in the vacuum chamber 12, and the other end portion side is the vacuum chamber 12. It is provided in a state where it is located outside. The other end side of the gas supply pipe 46 is a discharge cleaning gas flow tube 48 for circulating the discharge cleaning gas and a reactive gas for circulating the reactive gas outside the vacuum chamber 12. It is coupled to the distribution pipe 50. The discharge cleaning gas flow pipe 48 is coupled to a discharge cleaning gas supply source (not shown). The discharge cleaning gas flow pipe 48 is provided with an opening / closing valve 48a as an opening / closing means for opening / closing the inside of the discharge cleaning gas flow pipe 48. At the same time, the discharge cleaning gas flow tube 48 is provided with a mass flow controller 48b as a flow rate control means for controlling the flow rate of the discharge cleaning gas flowing in the discharge cleaning gas flow tube 48. On the other hand, the reactive gas flow pipe 50 is coupled to a reactive gas supply source (not shown). Similar to the discharge cleaning gas flow pipe 48, the reactive gas flow pipe 50 is also provided with an open / close valve 50a as an opening / closing means and a mass flow controller 50b as a flow rate control means. The components responsible for supplying the reactive gas into the vacuum chamber 12, including the gas supply pipe 46 and the reactive gas flow pipe 50, are an example of the gas supply means.

In addition, the pressure gauge 52 as a pressure detecting means is provided so that the gauge portion (measurement portion) 52a of the pressure gauge 52 is arranged at an appropriate position in the vacuum chamber 12, for example, a position near the substrate base 30. It will be provided. The pressure gauge 52 measures the pressure in the vacuum chamber 12, strictly speaking, the pressure P at the position of the gauge portion 52a. As such a pressure gauge 52, for example, an ionization vacuum gauge or a penning vacuum gauge is adopted. Further, the position of the gauge portion 52a is not limited to the vicinity of the substrate base 30, and may be a position where the influence of contamination by the evaporated particles and the reaction film, which will be described later, is small. The main body of the pressure gauge 52 is provided outside the vacuum chamber 12.

The measured value of the pressure P by the pressure gauge 52 is given to the evaporation amount control device 54 as the evaporation control means outside the vacuum chamber 12. The evaporation amount control device 54 controls the evaporation rate of the evaporation material 24 by the evaporation source 18 so that the measured value of the pressure P by the pressure gauge 52 becomes constant, that is, the pressure P becomes constant. The output Wg of the electronic gun 22 is controlled via the power supply device 26 for the electronic gun. The evaporation amount control device 54 may be incorporated in the electron gun power supply device 26 or the pressure gauge 52.

Further, although not shown, an appropriate heater as a heating means for heating the inside of the vacuum chamber 12 including the substrate 28 is provided at an appropriate position in the vacuum chamber 12. Examples of this heater include a carbon heater, a lamp heater, a sheathed heater, and a ceramic heater. Then, the heater appropriately heats the inside of the vacuum chamber 12 including the substrate 28 by receiving the electric power for heating the heater from the heater heating power supply device outside the vacuum chamber 12.

According to the reactive ion plating apparatus 10 according to the first embodiment having such a configuration, a reaction film can be formed as an object, for example, a titanium nitride (TiN) film which is a hard conductive film can be formed. Can be formed.

Therefore, first, high-purity solid titanium (Ti) as the evaporation material 24 is housed in the crucible 20. The titanium as the evaporation material 24 is, for example, a plate-shaped material having a side of about 2 cm square, or a granular material having a diameter of about 3 mm to 5 mm, but is not limited thereto. At the same time, the substrate 28 is attached to the substrate base 30. Then, after the vacuum tank 12 is sealed, the inside of the vacuum tank 12 is exhausted to about 10 ^-3 Pa by the vacuum pump 16, so-called evacuation is performed. Further, at the same time as evacuation, a heat treatment for heating the inside of the vacuum chamber 12 including the substrate 28 is performed by the above-mentioned ceramic heater, for example, the substrate 28 is heated to about 200 ° C.

After this evacuation and heat treatment are performed for, for example, 2 hours, a discharge cleaning (ion bombard) treatment for cleaning the surface to be treated of the substrate 28 is performed. Specifically, with the shutter 44 closed, argon (Ar) gas as a discharge cleaning gas is supplied into the vacuum chamber 12. Then, the pressure P in the vacuum chamber 12 is maintained at, for example, 0.07 (= 7 × 10 − ² ) Pa. Further, the filament heating power Wf is supplied to the filament 34. As a result, the filament 34 is heated, and thermions (primary electrons) are emitted from the filament 34. At the same time, the ionization power Wd is supplied to the filament 34. That is, the filament 34 is used as a cathode and the evaporation source 18 is used as an anode, and ionization power Wd is supplied to both of them. Then, the thermions emitted from the filament 34 as a cathode are accelerated toward the evaporation source 18 as an anode, particularly toward the crucible 20 located near the filament 34. The accelerated thermions inelastically collide with the particles of argon gas. As a result, the particles of argon gas are ionized and ionized. Then, by this ionization, electrons (secondary electrons) are repelled from (the outermost shell) of the argon gas particles, and the repelled electrons flow into the crucible 20 as an anode. By continuing this phenomenon, plasma containing ionized argon gas particles, that is, argon ions, is generated. An aspect of this plasma is a low voltage, high current arc discharge.

At this time, the ionization voltage Vd, which is a voltage component of the ionization power Wd, is set to 40V. Then, the filament heating power Wf is controlled so that the ionization current Id, which is a current component of the ionization power Wd, becomes 30 A, that is, the amount of thermionic emissions by the filament 34 is controlled. The ionization current Id represents the current flowing into the chamber 20 as the anode, that is, correlates (proportional) with the amount of ions (here, argon ions) in the plasma.

When the plasma due to this arc discharge stabilizes, specifically, when the fluctuation amount of the ionization current Id settles within a predetermined range, the above-mentioned bipolar pulse power as the substrate bias power Wb is subsequently supplied to the substrate base 30. .. At this time, the substrate bias voltage Vb (low level voltage) is adjusted so that the average value of the substrate bias voltage Vb, which is a voltage component of the substrate bias power Wb, is, for example, −500 V. Then, the shutter 44 is opened. Then, the argon ions in the plasma are attracted to the substrate 28 side and are incident on the surface to be processed of the substrate 28. The impact causes the surface to be treated of the substrate 28 to be cleaned, that is, a discharge cleaning process is performed.

After this discharge cleaning process is performed for, for example, 10 minutes, a film forming process for forming the titanium nitride film is performed. First, the shutter 44 is closed. At the same time, the supply of argon gas into the vacuum chamber 12 is stopped. Then, nitrogen (N ₂ ) gas as a reactive gas is supplied into the vacuum chamber 12. Then, the pressure in the vacuum chamber 12 is maintained at, for example, 0.07 Pa. Further, the electron gun 22 of the evaporation source 18 is energized. As a result, the electron beam 22a is emitted from the electron gun 22, and the electron beam 22a irradiates the evaporative material 24 in the crucible 20. Upon receiving the irradiation of the electron beam 22a, the evaporative material 24 is heated, melted, and further evaporated. At this time, the filament heating power Wf is supplied to the filament 34, and the ionization power Wd is also supplied to the filament 34. Therefore, the thermions emitted from the filament 34 are accelerated toward the crucible 20 as the anode, as in the case of the discharge cleaning process described above. Then, the accelerated electrons inelastically collide with the evaporated particles of the evaporative material 24. As a result, the evaporated particles of the evaporative material 24 are ionized and ionized. Further, by this ionization, electrons are repelled from the evaporated particles of the evaporative material 24, and the repelled electrons flow into the crucible 20 as an anode. In parallel with this, the electrons accelerated from the filament 34 toward the crucible 20 also inelastically collide with the particles of the nitrogen gas. As a result, the particles of nitrogen gas are ionized and ionized. Then, by this ionization, electrons are blown off from the particles of the nitrogen gas, and the blown-off electrons flow into the crucible 20. By continuing this phenomenon, plasma due to arc discharge is generated again.

At this time, the ionization voltage Vd, which is a voltage component of the ionization power Wd, is set to 50V. Then, the filament heating power Wf is controlled so that the ionization current Id, which is a current component of the ionization power Wd, becomes 70 A. Further, the substrate bias power Wb is adjusted so that the average value of the above-mentioned substrate bias voltage Vb is about −600 V.

When the plasma due to this arc discharge stabilizes, that is, when the fluctuation amount of the ionization current Id settles within a predetermined range as described above, the shutter 44 is subsequently released. Then, the vaporized particles of the ionized evaporative material 24, that is, titanium ions, and the ionized particles of nitrogen gas, that is, nitrogen ions are incident on the surface to be treated of the substrate 28. As a result, a titanium nitride film, which is a compound of titanium particles containing titanium ions and nitrogen particles containing nitrogen ions, is formed on the surface to be treated of the substrate 28.

This film forming process is continued until a titanium nitride film having a desired film thickness is formed, and then the shutter 44 is closed to end the film forming process. Then, the energization of the electron gun 22 is stopped. At the same time, the supply of nitrogen gas into the vacuum chamber 12 is stopped. Further, the supply of the substrate bias power Wb to the substrate 28 is stopped. Further, the supply of the filament heating power Wf to the filament 34 is stopped, and the supply of the ionization power Wd to the filament 34 is stopped. As a result, the plasma disappears. Then, the inside of the vacuum chamber 12 is evacuated again, and in this state, after an appropriate cooling period of about 30 minutes is left, the pressure in the vacuum chamber 12 is gradually returned to the atmospheric pressure. Then, the inside of the vacuum chamber 12 is opened, and the substrate 28 is taken out from the inside of the vacuum chamber 12. This completes a series of surface treatments including a film forming treatment for forming the titanium nitride film.

Here, the composition (formation mechanism) of the titanium nitride film will be considered stoichiometrically.

That is, the chemical reaction formula when the evaporated titanium particles and the nitrogen gas particles undergo ionization to form a titanium nitride film is represented by the following formula 1.

<< Formula 1 >>
2Ti + N ₂ → 2TiN
Based on this equation 1, for example, when the evaporation rate of titanium as the evaporation material 24 is 1 g / min, all of the evaporated titanium particles react with the particles of nitrogen gas to form a titanium nitride film. Suppose. In this case, the required nitrogen gas flow rate Q [N ₂ ] is estimated to be Q [N ₂ ] ≈234 mL / min from the following equation 1. In Equation 1, _NA is Avogadro's constant ( _NA ≈ 6.02 × 10 ²³ ). And M [Ti] is the atomic weight of titanium (M [Ti] ≈47.867). The value of 1/2 is the ratio of nitrogen molecules to the titanium atoms required for the reaction. And V ₀ is the volume of 1 mol of the ideal gas (V ₀ ≈ 22.4 × 10 ³ mL).

<< Number 1 >>
_Q [N ₂ ] = {(NA / _M [Ti]) · (1/2)} / (NA / V ₀ )
= {(1/2) ・ V ₀ } / M [Ti]
Assuming that such an ideal chemical reaction occurs in the reactive ion plating apparatus 10 according to the first embodiment, if the flow rate Q [N ₂ ] of the nitrogen gas is constant, the evaporative material It is considered that the formation rate of the titanium nitride film can be controlled by the evaporation rate of titanium as 24. On the other hand, when the nitrogen gas particles react with the titanium particles, the pressure P in the vacuum chamber 12 decreases by that amount. From this, it is considered that the pressure P in the vacuum chamber 12 correlates with the number of nitrogen gas particles that react with the titanium particles, that is, correlates with the number of the nitrogen gas particles that contribute to the formation of the titanium nitride film. Be done. Then, when these things are put together, the evaporation rate of titanium as the evaporative material 24 should be controlled so that the pressure P in the vacuum chamber 12 becomes constant while the flow rate [N ₂ ] of the nitrogen gas is constant. For example, it is considered that the formation rate of the titanium nitride film can be kept constant.

In order to verify this, first, the pressure P in the vacuum chamber 12, the flow rate Q [N ₂ ] of the nitrogen gas supplied in the vacuum chamber 12, and the evaporation rate of titanium as the evaporative material 24 are correlated. An experiment was conducted to confirm the relationship between the output Wg of the electron gun 22 and the output Wg. The results are shown in FIG. In this experiment, a crucible 20 (hearth liner) having a diameter of 80 mm and a depth dimension of 20 mm was used. The distance from the opening of the crucible 20 to the filament 34 was set to 70 mm. Further, by setting the acceleration voltage Vg of the electron gun 22 to 9 kV (constant) and the emission currents Ig to 440 mA, 540 mA and 640 mA, the output Wg of the electron gun 22 is 3.96 kW (= 9 kV × 440 mA), 4. It was set to 86 kW (= 9 kV × 540 mA) and 5.76 kW (= 9 kV × 640 mA). Then, the ionization voltage Vd was set to 50 V (constant), and the filament heating power Wf was controlled so that the ionization current Id was 70 A. However, the substrate bias power Wb was not supplied. Incidentally, in FIG. 2, the output Wg of the electron gun 22 is represented by the emission current Ig. Further, the value of the flow rate Q [N ₂ ] of the nitrogen gas shown in FIG. 2 is the value obtained by subtracting the exhaust gas from the vacuum pump 16 and is the value of the so-called net reaction component that contributes to the reaction with the titanium particles. .. The amount of exhaust from the vacuum pump 16 referred to here is about 10 mL / min in terms of flow rate from the characteristics of the vacuum pump (evacuation speed-vacuum degree characteristic). In addition, the value of the pressure P shown in FIG. 2, that is, the measured value of the pressure P by the pressure gauge 52 is the value of the pressure (gas pressure) component by the nitrogen gas, and is due to the vaporized particles of titanium as the evaporative material 24. Does not include the value of the pressure (vapor pressure) component.

According to the experimental results shown in FIG. 2, the flow rate Q [N ₂ ] of the nitrogen gas contributing to the reaction with the titanium particles is not limited to the output Wg (emission current Ig) of the electron gun 22, that is, the evaporative material 24. Regardless of the evaporation rate of titanium, the pressure P in the vacuum chamber 12 is saturated in the region of 0.06 Pa or more. The larger the output Wg of the electron gun 22, that is, the higher the evaporation rate of titanium as the evaporation material 24, the larger the flow rate Q [N ₂ ] of nitrogen gas for keeping the pressure P in the vacuum chamber 12 constant. Become. In other words, it can be seen that the higher the evaporation rate of titanium as the evaporation material 24, the larger the amount of nitrogen gas required to form the titanium nitride film at a rate commensurate with this.

Subsequently, a film forming process for actually forming the titanium nitride film is performed, and the evaporation rate of titanium as the evaporative material 24 and the formation rate of the titanium nitride film with respect to the flow rate Q [N ₂ ] of the nitrogen gas at this time are measured. An experiment was conducted to confirm the relationship. The results are shown in FIG. In this experiment, the distance between the opening of the crucible 20 and the surface to be processed of the substrate 28 was set to 630 mm. Then, the ionization voltage Vd was set to 50 V (constant), and the filament heating power Wf was controlled so that the ionization current Id was 70 A. Regarding the substrate bias power Wb, the average value of the substrate bias voltage Vb, which is a voltage component thereof, was set to −600 V. Further, the emission current Ig of the electron gun 22 was controlled so that the acceleration voltage Vg of the electron gun 22 was 9 kV (constant) and the pressure P in the vacuum chamber 12 was 0.07 Pa (constant). The emission current Ig at this time fluctuates in the range of 320 mA to 660 mA, that is, in the range of 2.88 kW (= 9 kV × 320 mA) to 5.94 kW (= 9 kV × 660 mA) in terms of the output Wg of the electron gun 22. It fluctuated. Then, the film forming process under this condition was carried out for 30 minutes. Incidentally, the value of the flow rate [N ₂ ] of the nitrogen gas shown in FIG. 3 includes the exhaust gas from the vacuum pump 16. Therefore, the value obtained by subtracting the exhaust gas (about 10 mL / min) from the vacuum pump 16 from the value of the flow rate Q [N ₂ ] of the nitrogen gas shown in FIG. 3 is the net reaction component that contributes to the reaction with the titanium particles. Becomes the value of.

According to the experimental results shown in FIG. 3, the evaporation rate of titanium as the evaporation material 24 is substantially proportional to the flow rate Q [N ₂ ] of nitrogen gas. Further, the formation rate of the titanium nitride film is also substantially proportional to the flow rate Q [N ₂ ] of the nitrogen gas. Therefore, while the flow rate [N ₂ ] of the nitrogen gas supplied in the vacuum chamber 12 is constant, the evaporation of titanium as the evaporative material 24 is made so that the pressure P in the vacuum chamber 12 is constant. It was verified that the formation rate of the titanium nitride film could be kept constant by controlling the rate.

In FIG. 3, paying attention to the evaporation rate of titanium when the flow rate of nitrogen gas [N ₂ ] is 240 mL / min, the value is 1.18 g / min. That is, the evaporation rate of titanium when the flow rate Q [N ₂ ] of the net reaction component that contributes to the reaction with the titanium particles in the nitrogen gas is about 230 (= 240-10) mL / min is 1.18 g. / Min. When this is converted into, for example, the evaporation rate of titanium when the flow rate Q [N ₂ ] of the reaction component of nitrogen gas is 234 mL / min, the converted value is 1.20 (= (234/230) × 1. 18) It becomes g / min. On the other hand, under the above-mentioned ideal state, the flow rate Q [N ₂ ] of nitrogen gas required when the evaporation rate of titanium is 1 g / min was estimated to be 234 mL / min. In short, according to the experimental results shown in FIG. 3, 1 g / min of the titanium particles evaporated at a rate of 1.20 g / min, that is, the majority (80% or more) of the titanium particles are nitrogen. It means that it reacts with gas particles and contributes to the formation of a titanium nitride film.

Since such verification results were obtained, an experiment was subsequently conducted to see if reproducibility that could be put to practical use could be obtained when forming the titanium nitride film. The results are shown in FIG. In this experiment, prior to the film forming process for forming the titanium nitride film, a discharge cleaning process was performed according to the above-mentioned procedure, and then a film forming process for forming the titanium nitride film was performed. Then, in the film forming process for forming the titanium nitride film, a crucible 20 having a diameter of 80 mm and a depth dimension of 20 mm was used as the crucible 20. Further, 420 g of titanium was housed in the crucible 20 as the evaporation material 24, and the film was formed with the 420 g of titanium 5 times, that is, 5 batches as described later. The distance from the opening of the crucible 20 to the filament 34 was set to 70 mm. Then, the ionization voltage Vd was set to 50 V (constant), and the filament heating power Wf was controlled so that the ionization current Id was 70 A. Regarding the substrate bias power Wb, the average value of the substrate bias voltage Vb, which is a voltage component thereof, was set to −600 V. Then, nitrogen gas was supplied into the vacuum chamber 12 at a constant flow rate Q [N ₂ ] of 180 mL / min. Further, the emission current Ig of the electron gun 22 was controlled so that the acceleration voltage Vg of the electron gun 22 was 9 kV (constant) and the pressure P in the vacuum chamber 12 was 0.07 Pa (constant). Then, the film forming process under this condition was carried out for 60 minutes. Further, this 60-minute film formation process was performed over 5 batches.

Of the experimental results shown in FIG. 4, a graph showing the evaporation amount of titanium and the film thickness of the titanium nitride film is shown in FIG. As shown in FIG. 5, for example, the evaporation amount of titanium is within the range of an extremely small variation of 50.35 ± 0.45 g, that is, extremely good reproducibility is obtained. I understand. Similarly, it can be seen that the film thickness of the titanium nitride film is also within the range of an extremely small variation of 2.35 ± 0.09 μm, that is, extremely good reproducibility is obtained.

Further, among the experimental results shown in FIG. 4, a graph showing the processing temperature at the time of film formation processing and the hardness of the titanium nitride film is shown in FIG. As shown in FIG. 6, it can be seen that extremely good reproducibility is obtained, for example, with respect to the processing temperature during the film forming process. It can also be seen that extremely good reproducibility is obtained with respect to hardness.

Further, FIG. 7 shows a graph of the color tone of the titanium nitride film among the experimental results shown in FIG. As shown in FIG. 7, regarding the color tone of the titanium nitride film, both the L value (strictly speaking, the L ^* value), the a value (strictly speaking, the a ^* value) and the b value (strictly speaking, the b ^* value) are both. It can be seen that extremely good reproducibility is obtained in each case.

In addition, the titanium nitride film formed by each batch was subjected to an analysis test of the crystal structure by the X-Ray Diffraction (XRD) method. The results are shown in FIG. As shown in FIG. 8, it was confirmed that all the titanium nitride films had the same crystal structure including the peak representing titanium nitride. According to the analysis result shown in FIG. 8, a peak representing silicon (Si) is also seen, which is due to the fact that the substrate 28 for analysis is a silicon wafer.

As described above, according to the first embodiment, the pressure P in the vacuum chamber 12 is constant while the flow rate [N ₂ ] of the nitrogen gas supplied in the vacuum chamber 12 is constant. As described above, by controlling the evaporation rate of titanium as the evaporative material 24, the formation rate of the titanium nitride film can be kept constant. That is, unlike the technique disclosed in Patent Document 1 described above, the formation rate of the titanium nitride film can be controlled to be constant without using a film thickness monitor as a film formation rate detection means. It was also confirmed that the titanium nitride film can be formed with good reproducibility according to the first embodiment. That is, according to the first embodiment, a reaction film such as a titanium nitride film having a large film thickness can be formed with good reproducibility. Further, since the film thickness monitor is not required, it is possible to reduce the cost including both the initial cost and the running cost.

In the first embodiment, the filament heating power Wf is controlled so that the ionization current Id is constant, which is also important for maintaining the reproducibility of the reaction membrane. That is, the ionization current Id correlates with the amount of ions in the plasma as described above, but if the amount of ions in the plasma fluctuates, for example, the reproducibility of the reaction film is greatly affected, and the quality of the reaction film is also affected. It also has a great effect on. In order to avoid this, in the first embodiment, the filament heating power Wf is controlled so that the ionization current Id is constant.

Further, in the first embodiment, the shutter 44 is electrically suspended as described above, which has the following advantages. That is, when the shutter 44 is in a state of being electrically connected to, for example, the vacuum chamber 12, ions and electrons in the plasma flow into the shutter 44. When the shutter 44 is opened and closed in this state, the amount of ions and electrons flowing into the shutter 44 changes, and the amount of ions and electrons in the plasma changes accordingly, that is, the plasma becomes unstable. Naturally, when the plasma becomes unstable, the reproducibility and quality of the reaction membrane are greatly affected. To avoid this. In the first embodiment, the shutter 44 is electrically suspended to prevent ions and electrons in the plasma from flowing into the shutter 44, and thus the plasma is stabilized.

[Second Example]
Next, a second embodiment of the present invention will be described with reference to FIGS. 9 and 10.

In the second embodiment, the reactive ion plating apparatus 10 shown in FIG. 1 is used to form an _{itria (} Y2O3) film which is an insulating film as a reaction film. Therefore, high-purity yttrium (Y) is housed in the crucible 20 as the evaporation material 24. The yttrium as the evaporation material 24 is, for example, a granular material having a diameter of about 3 mm to 5 mm, but is not limited thereto. Oxygen (O ₂ ) is used as the reactive gas. Other than this, it is almost the same as that of the first embodiment, so detailed description thereof will be omitted.

Here, the composition of the yttrium membrane is considered stoichiometrically.

That is, the chemical reaction formula when the evaporated yttrium particles and the oxygen gas particles undergo ionization to form an itria film is represented by the following formula 2.

<< Formula 2 >>
4Y + 3O ₂ → 2Y ₂ O ₃
Based on this equation 2, for example, when the evaporation rate of yttrium as the evaporation material 24 is 1 g / min, all of the evaporated yttrium particles react with oxygen gas particles to form an itria film. Suppose. In this case, the required oxygen gas flow rate Q [O ₂ ] is estimated to be Q [O ₂ ] ≈189 mL / min from the following number 2 following the above number 1. In Equation 2, M [Y] is the atomic weight of yttrium (M [Y] ≈88.906). The value of 3/4 is the ratio of oxygen molecules to the yttrium atom required for the reaction.

<< Number 2 >>
Q [O ₂ ] = {(NA / _M [Y]) · (3/4)} / ( _NA / V ₀ )
= {(3/4) ・ V ₀ } / M [Y]
Assuming that such an ideal chemical reaction occurs in the film formation process for forming the itria film, if the flow rate Q [O ₂ ] of oxygen gas is constant, ittrium as the evaporative material 24. It is considered that the formation rate of the itria film can be controlled by the evaporation rate of. On the other hand, when the oxygen gas particles react with the yttrium particles, the pressure P in the vacuum chamber 12 decreases by that amount. From this, it is considered that the pressure P in the vacuum chamber 12 correlates with the number of oxygen gas particles that react with the yttrium particles, that is, correlates with the number of the oxygen gas particles that contribute to the formation of the yttrium film. .. Then, when these things are put together, the evaporation rate of yttrium as the evaporative material 24 should be controlled so that the pressure P in the vacuum chamber 12 becomes constant while the flow rate [O ₂ ] of oxygen gas is constant. For example, it is considered that the formation rate of the itria film can be kept constant.

In order to verify this, first, the pressure P in the vacuum chamber 12, the flow rate Q [O ₂ ] of the oxygen gas supplied in the vacuum chamber 12, and the evaporation rate of yttrium as the evaporative material 24 are correlated. An experiment was conducted to confirm the relationship with the output Wg of the electron gun 22. The results are shown in FIG. In this experiment, a crucible 20 (hearth liner) having a diameter of 80 mm and a depth dimension of 16 mm was used. The distance from the opening of the crucible 20 to the filament 34 was set to 50 mm. Further, by setting the acceleration voltage Vg of the electron gun 22 to 9 kV (constant) and the emission current Ig to 250 mA, 300 mA, 350 mA and 400 mA, the output Wg of the electron gun 22 is 2.25 kW (= 9 kV × 250 mA). It was set to 2.70 kW (= 9 kV × 300 mA), 3.15 kW (= 9 kV × 350 mA) and 3.60 kW (= 9 kV × 400 mA). Then, the ionization voltage Vd was set to 25 V (constant), and the filament heating power Wf was controlled so that the ionization current Id was 20 A. However, the substrate bias power Wb was not supplied. Incidentally, in FIG. 9, the output Wg of the electron gun 22 is represented by the emission current Ig, as in FIG. 2 in the above-mentioned first embodiment. Further, the value of the oxygen gas flow rate Q [O ₂ ] shown in FIG. 9 is the same as the nitrogen gas flow rate Q [N ₂ ] in FIG. 2, obtained by subtracting the exhaust amount from the vacuum pump 16, that is, ittrium. It is the value of the net reaction component that contributes to the reaction with the particles. The amount of exhaust gas from the vacuum pump 16 referred to here is about 10 mL / min in terms of flow rate as described above. In addition, the value of pressure P shown in FIG. 9 is also the value of the pressure (gas pressure) component due to oxygen gas, similar to the value of pressure P in FIG. 2, and the pressure due to the vaporized particles of yttrium as the evaporative material 24. (Vapor pressure) Does not include the component value.

According to the experimental results shown in FIG. 9, the flow rate Q [O ₂ ] of oxygen gas contributing to the reaction with the yttrium particles is not related to the output Wg (emission current Ig) of the electron gun 22, that is, the evaporative material 24. Regardless of the evaporation rate of yttrium, the pressure P in the vacuum chamber 12 is saturated in the region of 0.01 Pa or more. The larger the output Wg of the electron gun 22, that is, the higher the evaporation rate of yttrium as the evaporation material 24, the larger the flow rate Q [O ₂ ] of oxygen gas for keeping the pressure P in the vacuum chamber 12 constant. Become. In other words, it can be seen that the higher the evaporation rate of yttrium as the evaporation material 24, the larger the amount of oxygen gas required to form the yttrium film at a rate commensurate with this.

Subsequently, a film forming process for actually forming the Itria film was performed, and an experiment was conducted to confirm the relationship between the formation rate of the Itria film and the flow rate Q [O ₂ ] of the oxygen gas at this time. The results are shown in FIG. In this experiment, the distance between the opening of the crucible 20 and the surface to be processed of the substrate 28 was set to 630 mm. Then, the ionization voltage Vd was set to 25 V (constant), and the filament heating power Wf was controlled so that the ionization current Id was 25 A. Regarding the substrate bias power Wb, the average value of the substrate bias voltage Vb, which is a voltage component thereof, was set to −400 V. Further, the emission current Ig of the electron gun 22 was controlled so that the acceleration voltage Vg of the electron gun 22 was 9 kV (constant) and the pressure P in the vacuum chamber 12 was 0.015 Pa (constant). The emission current Ig at this time fluctuates in the range of 260 mA to 400 mA, that is, in the range of 2.34 kW (= 9 kV × 260 mA) to 3.60 kW (= 9 kV × 400 mA) in terms of the output Wg of the electron gun 22. It fluctuated. Then, the film forming process under this condition was carried out for 30 minutes. Incidentally, the value of the flow rate [O ₂ ] of the oxygen gas shown in FIG. 10 includes the exhaust gas from the vacuum pump 16. Therefore, the value obtained by subtracting the exhaust amount from the vacuum pump 16 from the value of the flow rate Q [O ₂ ] of the oxygen gas shown in FIG. 10 is the value of the net reaction component that contributes to the reaction with the yttrium particles.

According to the experimental results shown in FIG. 10, the formation rate of the itria film is substantially proportional to the flow rate Q [O ₂ ] of oxygen gas. Therefore, while the flow rate [O ₂ ] of the oxygen gas supplied in the vacuum chamber 12 is constant, the evaporation of yttrium as the evaporative material 24 is made so that the pressure P in the vacuum chamber 12 is constant. It was verified that the formation rate of the Itria membrane can be kept constant by controlling the rate.

Although not shown, in this experiment, the evaporation rate of yttrium when the flow rate [N ₂ ] of the net reaction component contributing to the reaction with the yttrium particles in the oxygen gas is 190 mL / min is 1. It was .21 g / min. When this is converted into, for example, the evaporation rate of yttrium when the flow rate Q [N ₂ ] of the reaction component of oxygen gas is 189 mL / min, the converted value is 1.20 (= (189/190) × 1. 21) It becomes g / min. On the other hand, under the above-mentioned ideal state, the oxygen gas flow rate Q [O ₂ ] required when the evaporation rate of yttrium is 1 g / min was estimated to be 189 mL / min. This means that 1 g / min of the yttrium particles evaporated at a rate of 1.20 g / min, that is, the majority (80% or more) of the yttrium particles react with the oxygen gas particles to form an itria film. Means to contribute to.

Although detailed description including illustration is omitted, it was confirmed that the yttrium film can be formed with good reproducibility as in the titanium nitride film in the first embodiment.

As described above, according to the second embodiment, it was confirmed that the yttrium film, which is an insulating film, can be formed with good reproducibility. That is, according to the second embodiment, it is possible to form an insulating reaction film such as an yttrium film having a large film thickness with good reproducibility.

[Other application examples]
Each of the above-mentioned examples is a specific example of the present invention and does not limit the technical scope of the present invention. The present invention can be applied to aspects other than these examples.

For example, in each of the above-described embodiments, the evaporation source 18 including the crucible 20 is also used as an anode for generating plasma, but the configuration is not limited to this. Specifically, in the technique disclosed in Patent Document 1 described above, the anode for generating plasma is provided separately from the evaporation source, and the present invention can be applied to such a configuration. However, since the evaporation source 18 is also used as the anode, the configuration of the entire reactive ion plating apparatus 10 can be simplified and the cost can be reduced.

Further, the ion plating apparatus 10 disclosed in Patent Document 1 is not limited to the arc discharge type reactive ion plating apparatus 10 that generates plasma by arc discharge as in each of the above-described embodiments (the ion plating apparatus disclosed in Patent Document 1 is also an arc discharge type). The present invention can also be applied to known hollow cathode type ion plating devices and high frequency ion plating devices. That is, the present invention can also be applied to an ion plating apparatus provided with an ionizing means having a configuration different from that of each of the above-described embodiments.

Further, the electron gun 22 has been adopted as an evaporation means for evaporating the evaporation material 24, but the present invention is not limited to this. Other evaporation means such as resistance heating type and induction heating type may be adopted.

In addition, in each of the above-mentioned examples, the case where the titanium nitride film and the yttrium film are formed as the reaction film has been described, but the present invention is not limited to this. For example, when forming a nitride film other than a titanium nitride film such as a chromium nitride (CrN) film, a zirconium nitride (ZrN) film, a hafnium nitride (HfN) film, an aluminum nitride (AlN) film, or a silicon nitride (SiN) film. Also, the present invention can be applied. Further, when forming an oxide film other than the Itria film such as a titanium oxide (TiO ₂ ) film, a chromium oxide (Cr ₂ O ₃ ) film, a silicon oxide (SiO ₂ ) film, and an aluminum oxide (Al ₂ O ₃ ) film. Also, the present invention can be applied. Further, a carbide film such as a titanium carbide (TiC) film, a chromium carbide (CrC) film, a silicon carbide (SiC) film, a carbon nitride film such as a titanium carbide (TiCN) film or a silicon carbide (SiCN) film, and oxynitride. The present invention can be applied when forming various reaction films including an oxynitride film such as aluminum (AlON). The type of the evaporative material 24 and the type of the reactive gas are appropriately selected depending on the type of the reaction membrane. In addition, a plurality of types of reactive gases may be used at the same time. Further, a sublimation material may be adopted instead of the evaporation material 24.

The substrate bias power supply device 32 as the bias power supply means is not limited to the one that outputs the bipolar pulse power as the substrate bias power Wb. As the bias power supply means, it is desirable that an appropriate power supply device including a DC power supply device and a high frequency power supply device is adopted depending on the type of the substrate 28 and the type of the reaction film. In particular, when the substrate 28 is an insulating substance, it is important that a high-frequency power supply device is adopted in order to prevent charge-up.

10 ... Ion plating device 12 ... Vacuum tank 18 ... Evaporation source 20 ... Evaporation 22 ... Electron gun 24 ... Evaporation material 28 ... Board 32 ... Board bias power supply 34 ... Filament 36 ... Filament heating power supply 38 ... Ionization power supply 40 ... Current detector 42 ... Heating control device 52 ... Pressure gauge 54 ... Evaporation amount control device

Claims (5)

A reactive ion plating device that reacts particles of an evaporative material with particles of a reactive gas to form a reaction film, which is a compound of the particles of the evaporative material and the particles of the reactive gas, on the surface of the object to be treated. There,
A vacuum chamber, which itself is grounded and the object to be processed is placed inside, and the inside is exhausted.
An accommodating means, which is arranged below the object to be processed in the vacuum chamber and is grounded to accommodate the evaporative material.
An evaporative means for evaporating the evaporative material contained in the accommodating means,
An ionizing means for ionizing particles of the evaporative material evaporated by the evaporating means,
A gas supply means for supplying the reactive gas to the inside of the vacuum chamber at a constant flow rate, and an evaporation control for controlling the evaporation rate of the evaporative material by the evaporation means so that the pressure inside the vacuum chamber becomes constant. Equipped with means ,
The ionization means is
A hot cathode that is arranged between the accommodating means and the object to be processed in the vacuum chamber and emits thermions, and
Direct current ionization power for accelerating the thermions emitted from the hot cathode toward the accommodating means is supplied to the accommodating means and the hot cathode using the accommodating means as an anode and the hot cathode as a cathode. Reactive ion-plating device , including ionizing power supply means . The reactive ion plating apparatus according to claim 1 , further comprising a thermionic quantity controlling means for controlling the amount of thermionic emissions by the hot cathode so that the current flowing through the accommodating means as the anode is constant. .. The reactive ion play according to claim 1 or 2 , further comprising a bias power supply means for supplying the ionized particles of the evaporative material to the surface of the object to be processed. Ting device. The reactive ion plating apparatus according to any one of claims 1 to 3, which forms an insulating film as the reaction film. A reactive ion plating method in which particles of an evaporative material and particles of a reactive gas are reacted to form a reaction film, which is a compound of the particles of the evaporative material and the particles of the reactive gas, on the surface of an object to be treated. There,
In the inside of the vacuum chamber where the object to be processed is placed on the ground and the inside is exhausted, the object to be processed is arranged below the object to be processed and is housed in the grounded accommodating means. Evaporation step to evaporate the evaporative material,
An ionization step that ionizes the particles of the evaporation material evaporated by the evaporation step,
Evaporation control that controls the evaporation rate of the evaporative material by the gas supply step of supplying the reactive gas to the inside of the vacuum chamber at a constant flow rate and the evaporation step so that the pressure inside the vacuum chamber becomes constant. Including steps
The ionization step is
A thermionic emission step for emitting thermionic electrons from a hot cathode arranged between the accommodating means and the object to be processed inside the vacuum chamber, and a thermionic emission step.
Direct current ionization power for accelerating the thermions emitted from the hot cathode toward the accommodating means is supplied to the accommodating means and the hot cathode using the accommodating means as an anode and the hot cathode as a cathode. A reactive ion-plating method comprising an ionization power supply step .

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