US20030183893A1 - Electrical-optical package with capacitor dc shunts and associated methods - Google Patents
Electrical-optical package with capacitor dc shunts and associated methods Download PDFInfo
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- US20030183893A1 US20030183893A1 US10/109,314 US10931402A US2003183893A1 US 20030183893 A1 US20030183893 A1 US 20030183893A1 US 10931402 A US10931402 A US 10931402A US 2003183893 A1 US2003183893 A1 US 2003183893A1
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- 239000003990 capacitor Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000003491 array Methods 0.000 claims abstract description 33
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- 239000004020 conductor Substances 0.000 claims description 22
- 229920000642 polymer Polymers 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 7
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- 238000004891 communication Methods 0.000 claims description 6
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- 229920001721 polyimide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/4232—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using the surface tension of fluid solder to align the elements, e.g. solder bump techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Definitions
- Embodiments of the present invention relate to integrated circuit packaging and, in particular, relate to integrated circuit packages with optical interconnects.
- ICs electronic and optoelectronic integrated circuits
- lithographic processes typically include forming layers of material on the wafer, patterning the layers, doping the substrate and/or the patterned layers, and heat-treating (e.g., annealing) the resulting structures. These processes are repeated to build up the IC structure. The result is a wafer containing a large number of ICs.
- a “wafer sort” is then performed, wherein each IC chip on the wafer is electrically tested for functionality.
- the wafer is then separated (“diced”) into the individual IC chips, which are then “packaged” individually or in groups for incorporation onto a printed circuit board (PCB) or a chip-on-board (COB).
- PCB printed circuit board
- COB chip-on-board
- An IC package is designed to provide physical and environmental protection for one or more IC chips, and electrical and/or optical interconnections with other IC chips or to a PCB.
- the typical IC chip has electrical leads in the form of pins or balls with a periodic spacing (pitch) on the order of a hundred microns, whereas a PCB has an electrical contact pitch on the order of a millimeter or so.
- a substrate package is typically provided between the IC chip and the PCB.
- the substrate package also called an “interposer,” is a passive device containing integrated circuit wiring arranged to perform the spatial transformation between the IC chip leads and the PCB contacts.
- CPUs central processing units
- CPUs central processing units
- a greater number of leads may be employed to lower the total resistance and thus lower the power dissipation.
- a large power dissipation in the leads results in higher temperatures, which negatively impacts chip reliability.
- High-power CPUs also require many power decoupling capacitors to reduce the noise in the power delivery system. Thus, the package for a high-power CPU tends to be complicated and expensive.
- FIG. 1A is a side view of an optical-electrical (OE) package, in accordance with one embodiment of the present invention
- FIG. 1B is a close-up cross-sectional view of the substrate of the OE package of FIG. 1A, showing the various contact-receiving members and conductors within the substrate;
- FIG. 1C is a bottom-up view of the substrate of the OE package of FIG. 1A showing light-emitting and photodetector packages along with power and ground contact pads that connect to capacitor DC shunts (CDCSs);
- CDCSs capacitor DC shunts
- FIG. 2A is a close-up cross-sectional view of a light-emitting package coupled to one of the waveguides in an output waveguide array, in accordance with one embodiment of the invention
- FIG. 2B is a close-up cross-sectional view of a photodetector package coupled to one of the waveguides in an input waveguide array, in accordance with one embodiment of the invention
- FIG. 3A is a close-up cross-sectional view of channel waveguides formed in the upper surface of a substrate, illustrating one embodiment for forming input and/or output waveguide arrays;
- FIG. 3B is a close-up cross-sectional view of a substrate, illustrating another embodiment for forming input and/our output waveguide arrays atop a substrate upper surface;
- FIG. 3C shows close-up cross-sectional views of a substrate, illustrating another embodiment for forming input and/our output waveguide arrays atop a substrate upper surface by irradiating a photosensitive polymer;
- FIG. 4 is a close-up cross-sectional view of either a light-emitting package and an output waveguide or a photodetector package and input waveguide, illustrating the use of a grating coupler, in accordance with one embodiment of the invention
- FIG. 5 is a flow diagram outlining a method for fabricating the OE package of FIG. 1, in accordance with one embodiment of the invention.
- FIG. 6 is a plan view of a chip-to-chip communication system employing the OE package of FIG. 1, in accordance with one embodiment of the invention.
- FIG. 1A is a side view of an optical-electrical (OE) package 10 in accordance with one embodiment of the present invention.
- OE package 10 includes a substrate package (hereinafter, “substrate”) 20 having an upper surface 22 with a set 28 of contact-receiving members 30 .
- Substrate 20 also includes a lower surface 32 having a first set 38 of contact-receiving members 39 and a second set 40 of contact-receiving members 41 .
- Substrate 20 is also referred to as an “interposer,” and is a passive device containing conductors 50 A and 50 B (FIG. 1B) arranged to perform the spatial transformation between the set of contact-receiving members 28 on the upper surface and the sets of contact-receiving members 38 and 40 on the lower surface.
- FIG. 1B is a close-up cross-sectional view of the substrate of the OE package 10 of FIG. 1A, showing the various contact-receiving members and conductors within the substrate.
- contacts 54 are ball-type contacts or “bumps” and the IC chip is flip-bonded to the contact-receiving members 28 .
- the IC chip may be, for example, a microprocessor chip or a memory chip.
- Substrate 20 also includes power and ground conductors 60 A and 60 B with a number of power/ground leads 66 A and 66 B that lead to power/ground contact pads 68 A and 68 B on lower surface 32 (FIG. 1C).
- FIG. 1C is a bottom-up view of the substrate of the OE package 10 of FIG. 1A showing light-emitting and photodetector packages along with power and ground contact pads that connect to capacitor DC shunts (CDCSs).
- CDCSs capacitor DC shunts
- power and ground conductors 60 A and 60 B also include power/ground leads shown as 70 A and 70 B in FIG. 1B that are coupled to select contact-receiving members 28 . Still referring to FIG. 1B, the power and ground conductors further include power/ground leads 76 A and 76 B that are coupled to select contact-receiving members 39 , and power/ground leads 82 A and 82 B that are coupled to select contact-receiving members 41 .
- the power/ground conductors and leads in the substrate ( 20 , FIG. 1A) provide power and ground to devices coupled to the sets of contact-receiving members, as described in greater detail below.
- substrate 20 is formed from a polymer and is about 3 to 4 cm long and about 1 mm thick.
- the light-emitting package 100 includes a light-emitting array 102 , such as a vertical cavity surface emitting laser (VCSEL) array, a light-emitting diode (LED) array, or a laser diode array.
- the light-emitting package 100 also includes a transimpedance amplifier array 104 coupled to the light-emitting array that receives output voltage signals and provides corresponding output current signals to the light-emitting array.
- light-emitting package 100 includes on a backside 108 ball-type contacts 110 (“bumps”), and the light-emitting array is flip-chip bonded to the contact-receiving members 38 with the ball-type contacts 110 .
- contacts 110 are pins and the contact-receiving members 38 are holes adapted to receive the pins.
- Light 112 is emitted from light emitting array 102 from a frontside 114 .
- a microlens array 122 is arranged adjacent the frontside 114 of the light-emitting array 102 to focus and/or collimate the emitted light 112 .
- the microlens array 122 is attached to the frontside 114 of the light-emitting array 102 .
- the photodetector package 130 includes a photodetector array 132 coupled to a transimpedance amplifier array 134 .
- the latter receives input photocurrent signals from the photodetector array 132 and provides corresponding input voltage signals.
- photodetector array 132 includes on a backside 140 ball-type contacts 144 , and the photodetector array 132 is flip-chip bonded to the contact-receiving members 40 with the ball-type contacts 144 .
- the contacts are pins and the contact-receiving members 40 are holes adapted to receive the pins.
- Light 146 is detected at a frontside 150 of the photodetector array 132 .
- a microlens array 156 is arranged adjacent the frontside 150 of the photodetector array 132 to focus light 146 onto the array 132 .
- the microlens array 156 is attached to the frontside 150 .
- OE package 10 further includes a PCB or motherboard 200 having an upper surface 202 and internal power and ground conductors 206 A and 206 B coupled to a power source 208 and ground G, respectively.
- the power/ground conductors include a number of power/ground leads 210 A and 210 B leading to power/ground contacts 212 A and 212 B on the motherboard upper surface.
- OE package 10 also includes a number of capacitor DC (direct current) shunts, or CDCSs 250 arranged between the motherboard 200 and the substrate 20 .
- the CDCSs 250 are coupled to power/ground contacts 68 A and 68 B of the substrate 20 and to power/ground contacts 212 A and 212 B of the motherboard 200 .
- the CDCSs 250 serve to space apart the substrate 20 and motherboard 200 while replacing the conventional ball-type or pin-type electrical leads between substrate 20 and motherboard 200 .
- the CDCSs 250 provide part of the current path from power source 208 and motherboard conductors 210 A and 210 B to the substrate and conductors 60 A and 60 B, and thus to IC chip 52 , light-emitting package 100 , and photodetector package 130 .
- the CDCSs 250 act to limit noise generated by the IC chip 52 that can arise, for example, from the switching of the millions of transistors in a CPU.
- the reduction of noise is achieved by the CDCSs serving as local sources of current for the IC chip (beyond that available in the capacitors in the IC chip itself).
- the CDCSs provide current to eliminate the noise-producing current drops that would otherwise occur during transistor switching.
- the CDCSs 250 have a capacitance ranging from about 1 microfarad to 100 microfarads, depending on the application. For example, for relatively low speed applications such as cellular phones, the capacitance may be as low as 1 microfarad. On the other hand, for high-speed applications such as servers or high-end computers, the capacitance may be as high as 100 microfarads. In general, the capacitance of the CDCSs is selected to mitigate noise generated by the IC chip.
- FIG. 2A is a close-up cross-sectional view of a portion of motherboard 200 illustrating a light-emitting package 100 coupled to one of the waveguides 302 in an output waveguide array 300 , in accordance with one embodiment of the invention.
- FIG. 2B is a close-up cross-sectional view of a photodetector package 130 coupled to one of the waveguides 306 in an input waveguide array 304 , in accordance with one embodiment of the invention.
- motherboard 200 also includes an output optical waveguide array 300 made up of waveguides 302 . Further, with reference to FIG. 2B, motherboard 200 also includes an input optical waveguide array 304 of waveguides 306 .
- the waveguide arrays 300 and 304 are formed either atop or within upper surface 202 .
- Waveguide array 300 is optically coupled to light-emitting array 102 (FIG. 1), and input optical waveguide array is optically coupled to photodetector array 132 (FIG. 2).
- the input optical waveguide array carries input optical signals 314 and the output optical waveguide array carries output optical signals 316 .
- the input and output waveguide arrays comprise a polymer waveguide sheet laminated to upper surface 202 .
- Polymer waveguides are particularly well suited for transmitting light of infrared wavelength (e.g., 0.850 microns, 1.3 microns, 1.55 microns, etc.), which are commonly used wavelengths for chip-to-chip and other optical telecommunications applications.
- polymer waveguides are well-suited for use with motherboard 200 , which in an example embodiment is also formed from a polymer. Suitable polymer waveguide sheets are available from Optical Crosslinks, Inc., Kennet Square, Pa.
- FIG. 3A is a close-up cross-sectional view of channel waveguides 332 formed in the upper surface of a substrate 200 , illustrating one embodiment for forming input and/or output waveguide arrays 300 and 304 .
- Waveguide arrays 300 and 304 may also be formed in upper surface 202 using standard waveguide fabrication techniques.
- one such technique includes forming channels 320 in the upper surface and lining the channels with a low-index material 324 , such as a low-index polyimide.
- the lined channels are then filled with a high-index cladding layer 330 , such as a high-index polyimide.
- the formation of such waveguides 332 (referred to also as “channel waveguides”) may be preferred when it is desirable to reduce the separation between the substrate and the motherboard.
- FIG. 3B is a close-up cross-sectional view of a substrate 200 , illustrating another embodiment for forming input and/our output waveguide arrays 300 and 304 atop a substrate upper surface 202 .
- another technique for forming waveguide arrays 300 and 304 involves depositing or otherwise forming a first layer 350 of high-index core material atop upper surface 202 , patterning the first layer to form high-index waveguide cores 354 , and then depositing a low-index cladding layer 360 atop the waveguide cores.
- FIG. 3C shows close-up cross-sectional views of a substrate 200 , illustrating another embodiment for forming input and/our output waveguide arrays 300 and 304 atop a substrate upper surface 202 by irradiating a photosensitive polymer.
- another technique for forming waveguide arrays 200 and 230 involves depositing a layer 380 of photosensitive polymer that undergoes a change in refractive index when exposed to a select wavelength of radiation.
- An example polymer is acrylate, available from Dupont, Inc., Wilmington, Del.
- the waveguide array is then formed by selectively irradiating the photosensitive polymer with radiation 388 of the select wavelength (e.g., by masking the layer 380 ) to form high-index regions 390 within layer 380 .
- a low-index layer 392 e.g., the same material as layer 380 ) is then formed atop the structure to complete the cladding.
- waveguides arrays 300 and 304 are coupled to light-emitting array 102 and/or photodetector array 132 by respective beveled ends 404 and 406 formed in each waveguide in the arrays.
- FIG. 4 is a close-up cross-sectional view of either a light-emitting package 100 and an output waveguide 302 or a photodetector package 130 and input waveguide 306 , illustrating the use of a grating coupler, in accordance with one embodiment of the invention.
- waveguide arrays 300 and/or 304 are coupled to the light-emitting array and/or the photodetector array via a grating 410 .
- the grating is preferably designed to directionally diffract light 112 (e.g., output optical signals) from light-emitting array 102 into waveguide 302 , or directionally diffract light 146 (e.g., input optical signals) out of waveguide 306 and to photodetector array 132 .
- directionally diffract light 112 e.g., output optical signals
- directionally diffract light 146 e.g., input optical signals
- microlens arrays 422 and 426 may be formed adjacent the output and input waveguide arrays, respectively, to facilate coupling of light between the waveguide arrays and the light-emitting and photodetector arrays.
- microlens arrays 422 and 426 are attached to the output and input waveguide arrays, respectively.
- OE package 10 operates to receive input optical signals 314 and generate output optical signals 316 .
- input waveguide array 304 carries input optical signals 314 (FIG. 2B), which are detected by photodetector array 102 .
- the photodetector array outputs photocurrent signals corresponding to the detected input optical signals.
- the photocurrent signals are received by transimpedance amplifier array 104 , which converts the photocurrent signals to input voltage signals.
- the input voltage signals travel through one or more of the contact-receiving members 41 and the associated contacts 144 .
- the signals then travel through select conductors 50 B to select contact receiving members 30 and associated contacts 54 , and then to IC chip 52 .
- the IC chip processes the input voltage signals and generates output voltage signals.
- the output voltage signals travel through select IC chip contacts 54 and associated contact-receiving members 30 to conductors 50 A.
- the output voltage signals travel through select contact-receiving members 39 and associated contacts 110 and are received by transimpedance amplifier array 104 .
- the latter converts the output voltage signals to output current signals, which are received by light-emitting array 102 .
- the light-emitting array then emits output optical signals 316 , which are received and carried by output waveguide array 300 .
- electrical power is supplied to the OE package 10 from power source 208 via power conductor 206 A (in conjunction with ground conductor 206 B), through CDCSs 250 , and to the IC chip, the light-emitting package and the photodetector package.
- power conductor 206 A in conjunction with ground conductor 206 B
- CDCSs 250 in conjunction with ground conductor 206 B
- the use of the CDCSs provides for reduced noise while obviating the need for conventional package leads (e.g., in the form of balls or pins), which tend to heat and cause reliability issues.
- FIG. 5 is a flow diagram 500 outlining a method for fabricating the OE package 10 of FIG. 1, in accordance with one embodiment of the invention.
- substrate 20 with internal power and ground conductors 60 A and 60 B, and having sets 28 , 38 and 40 of contact-receiving members as described above is provided.
- IC chip 52 is electrically and mechanically coupled to contact-receiving member set 28 . In an example embodiment, this is accomplished using flip-chip bonding of ball-type (i.e., “bump”) contacts.
- ball-type i.e., “bump” contacts
- light-emitting package 100 and photodetector package 130 are coupled to contact-receiving member sets 38 and 40 , respectively. In an example embodiment, these packages are also flip-chip bonded with bump contacts.
- microlens arrays 122 and 156 are optionally formed adjacent the light-emitting array and the photodetector array to facilitate the efficient emission and reception of light.
- motherboard 200 with power/ground conductors 206 A and 206 B and leads 210 A and 210 B is provided.
- output and input waveguide arrays 300 and 304 are formed atop or within upper surface 202 of the motherboard.
- microlens arrays 420 and 426 are optionally formed adjacent the waveguide arrays to facilitate efficient optical coupling between waveguide arrays and the light-emitting array and photodetector array.
- CDCSs 250 are arranged between substrate lower surface 32 and motherboard upper surface 202 and are coupled to power/ground contacts 68 A and 68 B of the substrate and power/ground contacts 212 A and 212 B of the motherboard. Prior to permanently interfacing the substrate and the motherboard using the CDCSs, care should be taken to ensure alignment of the light-emitting array with the output waveguide array and the photodetector array with the input waveguide array for optimal optical coupling.
- motherboard power/ground conductors 206 A and 206 are electrically coupled to power supply 208 and ground G, respectively.
- the above method represents one representative embodiment of a method of fabricating the OE package of the present invention.
- Other embodiments include performing the above method in an order different than that presented above.
- FIG. 6 is a plan view of a chip-to-chip communication system 600 employing the OE package 10 of FIG. 1, in accordance with one embodiment of the invention.
- Input waveguide array 304 is coupled at one end to an optoelectronic device (“chip”) 610 on the motherboard, while output waveguide array 300 is coupled at one end to another optoelectronic device (“chip”) 616 .
- Chips 610 and 616 include, in an example embodiment, microprocessors, while in another example embodiment they include a microprocessor and a memory chip.
- the OE package is electrically coupled to power supply 208 via power conductor 206 A of motherboard 200 .
- Optoelectronic device 610 emits input optical signals 314 that travel down the input waveguide array 306 to the OE package. As described above, the optical signals 314 are detected by the photodetector package 130 and converted to input voltage signals, which are then processed by IC chip 52 . The output voltage signals produced by IC chip 52 are then sent to the light-emitting package, where the signals are converted to output optical signals 316 . These output signals are coupled into the output waveguide array. The output optical signals then travel to device 616 , where they are received and processed.
- Chip-to-chip communication system 600 has the ability to provide high-speed, low-noise optical communication between IC chips 52 , 610 and 616 , because the CDCSs reduce the signal noise while also reducing or eliminating the overheating that normally occurs when providing high power to high-speed IC chips.
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Abstract
An optical-electrical (OE) package includes a substrate electrically coupled to a motherboard via one or more capacitor DC shunts (CDCSs). In one embodiment, the substrate includes an IC chip electrically coupled to a first set of contact-receiving members on an upper surface of the substrate. The substrate also includes a light-emitting package and a photodetector package electrically coupled to respective second and third sets of contact-receiving members on the substrate lower surface. The substrate has internal wiring that electrically interconnects the IC chip, the light-emitting package and the photodetector array. The light-emitting package and the photodetector array are optically coupled to respective first and second waveguide arrays formed in or on the motherboard. The CDCSs mitigate noise generated by the IC chip by serving as a local current source.
Description
- Embodiments of the present invention relate to integrated circuit packaging and, in particular, relate to integrated circuit packages with optical interconnects.
- The manufacturing of electronic and optoelectronic integrated circuits (ICs) involves complex lithographic processes to form microscopic solid-state devices and circuits in semiconductor wafers. These lithographic processes typically include forming layers of material on the wafer, patterning the layers, doping the substrate and/or the patterned layers, and heat-treating (e.g., annealing) the resulting structures. These processes are repeated to build up the IC structure. The result is a wafer containing a large number of ICs.
- A “wafer sort” is then performed, wherein each IC chip on the wafer is electrically tested for functionality. The wafer is then separated (“diced”) into the individual IC chips, which are then “packaged” individually or in groups for incorporation onto a printed circuit board (PCB) or a chip-on-board (COB).
- An IC package is designed to provide physical and environmental protection for one or more IC chips, and electrical and/or optical interconnections with other IC chips or to a PCB. However, the typical IC chip has electrical leads in the form of pins or balls with a periodic spacing (pitch) on the order of a hundred microns, whereas a PCB has an electrical contact pitch on the order of a millimeter or so. Thus, when interfacing an IC chip to a PCB, a substrate package is typically provided between the IC chip and the PCB. The substrate package, also called an “interposer,” is a passive device containing integrated circuit wiring arranged to perform the spatial transformation between the IC chip leads and the PCB contacts.
- As central processing units (CPUs) increase in speed, they need increasing amounts of power to operate. This requires passing a high current through the leads, which in turns requires low-resistance leads to reduce power dissipation. Alternatively, a greater number of leads may be employed to lower the total resistance and thus lower the power dissipation. A large power dissipation in the leads results in higher temperatures, which negatively impacts chip reliability. High-power CPUs also require many power decoupling capacitors to reduce the noise in the power delivery system. Thus, the package for a high-power CPU tends to be complicated and expensive.
- FIG. 1A is a side view of an optical-electrical (OE) package, in accordance with one embodiment of the present invention;
- FIG. 1B is a close-up cross-sectional view of the substrate of the OE package of FIG. 1A, showing the various contact-receiving members and conductors within the substrate;
- FIG. 1C is a bottom-up view of the substrate of the OE package of FIG. 1A showing light-emitting and photodetector packages along with power and ground contact pads that connect to capacitor DC shunts (CDCSs);
- FIG. 2A is a close-up cross-sectional view of a light-emitting package coupled to one of the waveguides in an output waveguide array, in accordance with one embodiment of the invention;
- FIG. 2B is a close-up cross-sectional view of a photodetector package coupled to one of the waveguides in an input waveguide array, in accordance with one embodiment of the invention;
- FIG. 3A is a close-up cross-sectional view of channel waveguides formed in the upper surface of a substrate, illustrating one embodiment for forming input and/or output waveguide arrays;
- FIG. 3B is a close-up cross-sectional view of a substrate, illustrating another embodiment for forming input and/our output waveguide arrays atop a substrate upper surface;
- FIG. 3C shows close-up cross-sectional views of a substrate, illustrating another embodiment for forming input and/our output waveguide arrays atop a substrate upper surface by irradiating a photosensitive polymer;
- FIG. 4 is a close-up cross-sectional view of either a light-emitting package and an output waveguide or a photodetector package and input waveguide, illustrating the use of a grating coupler, in accordance with one embodiment of the invention;
- FIG. 5 is a flow diagram outlining a method for fabricating the OE package of FIG. 1, in accordance with one embodiment of the invention; and
- FIG. 6 is a plan view of a chip-to-chip communication system employing the OE package of FIG. 1, in accordance with one embodiment of the invention.
- In the following detailed description of the embodiments of the invention, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific embodiments in which embodiments of the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to understand and implement them, and it is to be understood that other embodiments may be utilized and that changes may be made without departing from the scope of the present disclosure. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of embodiments of the present invention is defined only by the appended claims.
- FIG. 1A is a side view of an optical-electrical (OE)
package 10 in accordance with one embodiment of the present invention.OE package 10 includes a substrate package (hereinafter, “substrate”) 20 having anupper surface 22 with aset 28 of contact-receivingmembers 30.Substrate 20 also includes alower surface 32 having afirst set 38 of contact-receivingmembers 39 and asecond set 40 of contact-receivingmembers 41.Substrate 20 is also referred to as an “interposer,” and is a passivedevice containing conductors 50A and 50B (FIG. 1B) arranged to perform the spatial transformation between the set of contact-receivingmembers 28 on the upper surface and the sets of contact-receivingmembers - FIG. 1B is a close-up cross-sectional view of the substrate of the
OE package 10 of FIG. 1A, showing the various contact-receiving members and conductors within the substrate. - Referring again to FIG. 1A, attached (i.e., electrically coupled) to contact-receiving
member set 28 is an integrated circuit (IC)chip 52 havingcontacts 54. In an example embodiment,contacts 54 are ball-type contacts or “bumps” and the IC chip is flip-bonded to the contact-receivingmembers 28. The IC chip may be, for example, a microprocessor chip or a memory chip. -
Substrate 20 also includes power andground conductors 60A and 60B with a number of power/ground leads 66A and 66B that lead to power/ground contact pads - FIG. 1C is a bottom-up view of the substrate of the
OE package 10 of FIG. 1A showing light-emitting and photodetector packages along with power and ground contact pads that connect to capacitor DC shunts (CDCSs). - Referring again to FIG. 1A, power and
ground conductors 60A and 60B also include power/ground leads shown as 70A and 70B in FIG. 1B that are coupled to select contact-receivingmembers 28. Still referring to FIG. 1B, the power and ground conductors further include power/ground leads 76A and 76B that are coupled to select contact-receivingmembers 39, and power/ground leads 82A and 82B that are coupled to select contact-receivingmembers 41. The power/ground conductors and leads in the substrate (20, FIG. 1A) provide power and ground to devices coupled to the sets of contact-receiving members, as described in greater detail below. In an example embodiment,substrate 20 is formed from a polymer and is about 3 to 4 cm long and about 1 mm thick. - With continuing reference to FIG. 1A, electrically coupled to set of contact-receiving
members 38 on the lower surface of thesubstrate 20 is a light-emittingpackage 100. The light-emittingpackage 100 includes a light-emittingarray 102, such as a vertical cavity surface emitting laser (VCSEL) array, a light-emitting diode (LED) array, or a laser diode array. The light-emittingpackage 100 also includes a transimpedance amplifier array 104 coupled to the light-emitting array that receives output voltage signals and provides corresponding output current signals to the light-emitting array. - In an example embodiment, light-emitting
package 100 includes on abackside 108 ball-type contacts 110 (“bumps”), and the light-emitting array is flip-chip bonded to the contact-receivingmembers 38 with the ball-type contacts 110. In another example embodiment,contacts 110 are pins and the contact-receivingmembers 38 are holes adapted to receive the pins.Light 112 is emitted from light emittingarray 102 from a frontside 114. In an example embodiment, amicrolens array 122 is arranged adjacent the frontside 114 of the light-emittingarray 102 to focus and/or collimate the emittedlight 112. In an example embodiment, themicrolens array 122 is attached to the frontside 114 of the light-emittingarray 102. - Also coupled to the lower surface of the
substrate 20 at the contact-receiving member set 40 is aphotodetector package 130. Thephotodetector package 130 includes aphotodetector array 132 coupled to atransimpedance amplifier array 134. The latter receives input photocurrent signals from thephotodetector array 132 and provides corresponding input voltage signals. In an example embodiment,photodetector array 132 includes on abackside 140 ball-type contacts 144, and thephotodetector array 132 is flip-chip bonded to the contact-receivingmembers 40 with the ball-type contacts 144. In another example embodiment, the contacts are pins and the contact-receivingmembers 40 are holes adapted to receive the pins.Light 146 is detected at a frontside 150 of thephotodetector array 132. In an example embodiment, amicrolens array 156 is arranged adjacent the frontside 150 of thephotodetector array 132 to focus light 146 onto thearray 132. In an example embodiment, themicrolens array 156 is attached to the frontside 150. -
OE package 10 further includes a PCB ormotherboard 200 having anupper surface 202 and internal power andground conductors power source 208 and ground G, respectively. The power/ground conductors include a number of power/ground leads 210A and 210B leading to power/ground contacts -
OE package 10 also includes a number of capacitor DC (direct current) shunts, orCDCSs 250 arranged between themotherboard 200 and thesubstrate 20. TheCDCSs 250 are coupled to power/ground contacts substrate 20 and to power/ground contacts motherboard 200. TheCDCSs 250 serve to space apart thesubstrate 20 andmotherboard 200 while replacing the conventional ball-type or pin-type electrical leads betweensubstrate 20 andmotherboard 200. TheCDCSs 250 provide part of the current path frompower source 208 and motherboard conductors 210A and 210B to the substrate andconductors 60A and 60B, and thus toIC chip 52, light-emittingpackage 100, andphotodetector package 130. - The
CDCSs 250 act to limit noise generated by theIC chip 52 that can arise, for example, from the switching of the millions of transistors in a CPU. The reduction of noise is achieved by the CDCSs serving as local sources of current for the IC chip (beyond that available in the capacitors in the IC chip itself). In particular, the CDCSs provide current to eliminate the noise-producing current drops that would otherwise occur during transistor switching. - In example embodiments, the
CDCSs 250 have a capacitance ranging from about 1 microfarad to 100 microfarads, depending on the application. For example, for relatively low speed applications such as cellular phones, the capacitance may be as low as 1 microfarad. On the other hand, for high-speed applications such as servers or high-end computers, the capacitance may be as high as 100 microfarads. In general, the capacitance of the CDCSs is selected to mitigate noise generated by the IC chip. - FIG. 2A is a close-up cross-sectional view of a portion of
motherboard 200 illustrating a light-emittingpackage 100 coupled to one of thewaveguides 302 in anoutput waveguide array 300, in accordance with one embodiment of the invention. - FIG. 2B is a close-up cross-sectional view of a
photodetector package 130 coupled to one of thewaveguides 306 in aninput waveguide array 304, in accordance with one embodiment of the invention. - With reference to FIG. 2A,
motherboard 200 also includes an outputoptical waveguide array 300 made up ofwaveguides 302. Further, with reference to FIG. 2B,motherboard 200 also includes an inputoptical waveguide array 304 ofwaveguides 306. Thewaveguide arrays upper surface 202.Waveguide array 300 is optically coupled to light-emitting array 102 (FIG. 1), and input optical waveguide array is optically coupled to photodetector array 132 (FIG. 2). The input optical waveguide array carries inputoptical signals 314 and the output optical waveguide array carries output optical signals 316. - In an example embodiment, the input and output waveguide arrays comprise a polymer waveguide sheet laminated to
upper surface 202. Polymer waveguides are particularly well suited for transmitting light of infrared wavelength (e.g., 0.850 microns, 1.3 microns, 1.55 microns, etc.), which are commonly used wavelengths for chip-to-chip and other optical telecommunications applications. Also, polymer waveguides are well-suited for use withmotherboard 200, which in an example embodiment is also formed from a polymer. Suitable polymer waveguide sheets are available from Optical Crosslinks, Inc., Kennet Square, Pa. - FIG. 3A is a close-up cross-sectional view of
channel waveguides 332 formed in the upper surface of asubstrate 200, illustrating one embodiment for forming input and/oroutput waveguide arrays -
Waveguide arrays upper surface 202 using standard waveguide fabrication techniques. With reference to FIG. 3A, one such technique includes formingchannels 320 in the upper surface and lining the channels with a low-index material 324, such as a low-index polyimide. The lined channels are then filled with a high-index cladding layer 330, such as a high-index polyimide. The formation of such waveguides 332 (referred to also as “channel waveguides”) may be preferred when it is desirable to reduce the separation between the substrate and the motherboard. - FIG. 3B is a close-up cross-sectional view of a
substrate 200, illustrating another embodiment for forming input and/ouroutput waveguide arrays upper surface 202. - With reference to FIG. 3B, another technique for forming
waveguide arrays first layer 350 of high-index core material atopupper surface 202, patterning the first layer to form high-index waveguide cores 354, and then depositing a low-index cladding layer 360 atop the waveguide cores. - FIG. 3C shows close-up cross-sectional views of a
substrate 200, illustrating another embodiment for forming input and/ouroutput waveguide arrays upper surface 202 by irradiating a photosensitive polymer. - With reference to FIG. 3C, another technique for forming
waveguide arrays 200 and 230 involves depositing alayer 380 of photosensitive polymer that undergoes a change in refractive index when exposed to a select wavelength of radiation. An example polymer is acrylate, available from Dupont, Inc., Wilmington, Del. The waveguide array is then formed by selectively irradiating the photosensitive polymer withradiation 388 of the select wavelength (e.g., by masking the layer 380) to form high-index regions 390 withinlayer 380. A low-index layer 392 (e.g., the same material as layer 380) is then formed atop the structure to complete the cladding. - With reference again to FIGS. 2A and 2B, in an example embodiment,
waveguides arrays array 102 and/orphotodetector array 132 by respective beveled ends 404 and 406 formed in each waveguide in the arrays. - FIG. 4 is a close-up cross-sectional view of either a light-emitting
package 100 and anoutput waveguide 302 or aphotodetector package 130 andinput waveguide 306, illustrating the use of a grating coupler, in accordance with one embodiment of the invention. In another example embodiment illustrated in FIG. 4,waveguide arrays 300 and/or 304 are coupled to the light-emitting array and/or the photodetector array via agrating 410. The grating is preferably designed to directionally diffract light 112 (e.g., output optical signals) from light-emittingarray 102 intowaveguide 302, or directionally diffract light 146 (e.g., input optical signals) out ofwaveguide 306 and tophotodetector array 132. - With reference again to FIG. 1, in another example embodiment,
microlens arrays microlens arrays -
OE package 10 operates to receive inputoptical signals 314 and generate output optical signals 316. Thus, in operationinput waveguide array 304 carries input optical signals 314 (FIG. 2B), which are detected byphotodetector array 102. The photodetector array outputs photocurrent signals corresponding to the detected input optical signals. The photocurrent signals are received by transimpedance amplifier array 104, which converts the photocurrent signals to input voltage signals. The input voltage signals travel through one or more of the contact-receivingmembers 41 and the associatedcontacts 144. The signals then travel throughselect conductors 50B to selectcontact receiving members 30 and associatedcontacts 54, and then toIC chip 52. - The IC chip processes the input voltage signals and generates output voltage signals. The output voltage signals travel through select
IC chip contacts 54 and associated contact-receivingmembers 30 to conductors 50A. The output voltage signals travel through select contact-receivingmembers 39 and associatedcontacts 110 and are received by transimpedance amplifier array 104. The latter converts the output voltage signals to output current signals, which are received by light-emittingarray 102. The light-emitting array then emits outputoptical signals 316, which are received and carried byoutput waveguide array 300. - In combination with the above, electrical power is supplied to the
OE package 10 frompower source 208 viapower conductor 206A (in conjunction withground conductor 206B), throughCDCSs 250, and to the IC chip, the light-emitting package and the photodetector package. As discussed above, the use of the CDCSs provides for reduced noise while obviating the need for conventional package leads (e.g., in the form of balls or pins), which tend to heat and cause reliability issues. - FIG. 5 is a flow diagram500 outlining a method for fabricating the
OE package 10 of FIG. 1, in accordance with one embodiment of the invention. First, in 502,substrate 20 with internal power andground conductors 60A and 60B, and havingsets IC chip 52 is electrically and mechanically coupled to contact-receiving member set 28. In an example embodiment, this is accomplished using flip-chip bonding of ball-type (i.e., “bump”) contacts. Likewise, in 506 and 508, light-emittingpackage 100 andphotodetector package 130 are coupled to contact-receiving member sets 38 and 40, respectively. In an example embodiment, these packages are also flip-chip bonded with bump contacts. - Next, in510,
microlens arrays - Next, in512,
motherboard 200 with power/ground conductors input waveguide arrays upper surface 202 of the motherboard. In 516,microlens arrays - In518,
CDCSs 250 are arranged between substratelower surface 32 and motherboardupper surface 202 and are coupled to power/ground contacts ground contacts - Finally, in520, motherboard power/
ground conductors 206A and 206 are electrically coupled topower supply 208 and ground G, respectively. - The above method represents one representative embodiment of a method of fabricating the OE package of the present invention. Other embodiments include performing the above method in an order different than that presented above.
- FIG. 6 is a plan view of a chip-to-chip communication system600 employing the
OE package 10 of FIG. 1, in accordance with one embodiment of the invention.Input waveguide array 304 is coupled at one end to an optoelectronic device (“chip”) 610 on the motherboard, whileoutput waveguide array 300 is coupled at one end to another optoelectronic device (“chip”) 616.Chips power supply 208 viapower conductor 206A ofmotherboard 200. -
Optoelectronic device 610 emits inputoptical signals 314 that travel down theinput waveguide array 306 to the OE package. As described above, theoptical signals 314 are detected by thephotodetector package 130 and converted to input voltage signals, which are then processed byIC chip 52. The output voltage signals produced byIC chip 52 are then sent to the light-emitting package, where the signals are converted to output optical signals 316. These output signals are coupled into the output waveguide array. The output optical signals then travel todevice 616, where they are received and processed. - Chip-to-chip communication system600 has the ability to provide high-speed, low-noise optical communication between
IC chips - The various elements depicted in the drawings are merely representational and are not drawn to scale. Certain proportions thereof may be exaggerated, while others may be minimized. The drawings are intended to illustrate various implementations of the invention, which can be understood and appropriately carried out by those of ordinary skill in the art.
- While certain elements have been described herein relative to “upper” and “lower”, “left” and “right”, “atop” and “below,” and “front” and “back”, it will be understood that these descriptors are relative, and that they could be reversed if the elements were inverted, rotated, or mirrored. Therefore, these terms are not intended to be limiting.
- It is emphasized that the Abstract is provided to comply with 37 C.F.R. §1.72(b) requiring an Abstract that will allow the reader to quickly ascertain the nature and gist of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
- In the foregoing Detailed Description of Embodiments of the Invention, various features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments of the invention require more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus the following claims are hereby incorporated into the Detailed Description of Embodiments of the Invention, with each claim standing on its own as a separate preferred embodiment.
- While the present invention has been described in connection with preferred embodiments, it will be understood that it is not so limited. On the contrary, it is intended to cover all alternatives, modifications and equivalents as may be included within the spirit and scope of the invention as defined in the appended claims.
Claims (25)
1. An optical-electrical (OE) package comprising:
a substrate electrically coupled to a circuit board via one or more capacitor DC shunts (CDCSs), the circuit board having first and second waveguide arrays;
an IC chip electrically coupled to a first set of contact-receiving members on an upper surface of the substrate; and
a light-emitting package and a photodetector package electrically coupled to respective second and third sets of contact-receiving members on a substrate lower surface, so as to be in electrical communication to the IC chip, the light-emitting package being optically coupled to the first waveguide array and the photodetector package being optically coupled to the second waveguide array.
2. The OE package of claim 1 , wherein the substrate and circuit board each include power and ground conductors with leads coupled to the one or more CDCSs.
3. The OE package of claim 1 , wherein the power conductor in the circuit board is coupled to a power source.
4. The OE package of claim 1 , wherein the light-emitting package includes an array of light-emitting devices coupled to a first array of transimpedance amplifiers.
5. The OE package of claim 4 , wherein the light-emitting array includes one of a vertical cavity surface emitting laser (VCSEL) array, a light-emitting diode (LED) array, or a laser diode array.
6. The OE package of claim 4 , wherein the photodetector package includes an array of photodetectors coupled to a second array of transimpedance amplifiers.
7. The OE package of claim 6 , further including first and second microlens arrays arranged adjacent the light-emitting array and the photodetector array, respectively.
8. The OE package of claim 7 , further including a third microlens array, arranged adjacent the first waveguide array and a fourth microlens array arranged adjacent the second waveguide array.
9. The OE package of claim 1 , wherein at least one of the IC chip, the light-emitting package and the photodetector package are flip-chip coupled to the substrate.
10. The OE package of claim 1 , wherein the CDCSs have a capacitance in the range from about 1 microfarad to about 100 microfarads.
11. An optical-electrical (OE) package, comprising:
a first IC chip, a light-emitting package, and a photodetector package each electrically coupled to respective sets of contact-receiving members of a substrate; and
capacitor DC shunts (CDCSs) electrically coupled to the substrate and to couple to a motherboard.
12. The OE package of claim 11 , further including:
the motherboard electrically coupled to the substrate through the CDCSs, the motherboard including first and second waveguide arrays optically coupled to the light-emitting package and the photodetector package, respectively.
13. The OE package of claim 12 , wherein the light-emitting package includes one of a vertical cavity surface emitting laser (VCSEL) array, a light-emitting diode (LED) array, or a laser diode array.
14. The OE package of claim 13 , wherein the photodetector package includes an array of photodetectors coupled to an array of transimpedance amplifiers.
15. A system, comprising:
an optical-electrical package that includes a first IC chip, a light-emitting package, and a photodetector package each electrically coupled to respective sets of contact-receiving members of a substrate, and capacitor DC shunts (CDCSs) electrically coupling the substrate to a substrate;
first and second waveguide arrays formed on the motherboard and optically coupled at respective first ends to the light-emitting package and the photodetector package; and
second and third IC chips mounted on the substrate and optically coupled to respective second ends of the first and second waveguide arrays.
16. The system of claim 15 , wherein at least one of the first, second and third IC chips includes a microprocessor.
17. The system of 15, further including a power supply electrically coupled to a conductor within the substrate.
18. The system of claim 15 , wherein the first and second waveguide arrays are formed from polymer sheets fixed to an upper surface of the substrate.
19. The system of claim 15 , wherein the first and second waveguides each include a plurality of channel waveguides formed in an upper surface of the substrate.
20. A method comprising:
receiving input optical signals from an input waveguide on a motherboard, with a photodetector package mounted to a lower surface of a substrate residing above the motherboard;
converting the input optical signals to input electrical signals;
processing the input electrical signals with a first IC chip mounted to the substrate, thereby forming output electrical signals;
converting the output electrical signals to output optical signals via a light-emitting package mounted to the lower surface of the substrate and coupled to an output waveguide array to carry the output optical signals; and
providing power to the first IC chip, the light-emitting package, and the photodetector package through the motherboard via capacitor DC shunts (CDCSs) arranged between the motherboard and the substrate.
21. The method of claim 20 , including generating the input optical signals with a second IC chip mounted to the motherboard and optically coupled to the input waveguide.
22. The method of claim 21 , including coupling the output optical signals to the output waveguide and receiving the output optical signals with a third IC chip mounted to the motherboard and optically coupled to the output waveguide array.
23. A method comprising:
electrically coupling a first IC chip, a light-emitting package, and a photodetector package to respective sets of contact-receiving members of a substrate; and
electrically coupling the substrate to a motherboard with capacitor DC shunts (CDCSs) arranged between the motherboard and the substrate, the CDCSs having a capacitance selected to mitigate noise generated by the first IC chip.
24. The method of claim 23 , further including aligning the light-emitting package and the photodetector package to respective first and second waveguide arrays formed in or on the motherboard.
25. The method of claim 24 , further including:
receiving with the photodetector package input optical signals from the second waveguide array and generating input electrical signals;
processing the input electrical signals with the first IC chip and generating output electrical signals; and
receiving the output electrical signals with the light-emitting package and generating output optical signals and outputting the output optical signals to the first waveguide array.
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US10/649,414 US6841842B2 (en) | 2002-03-28 | 2003-08-26 | Method and apparatus for electrical-optical packaging with capacitive DC shunts |
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US6624444B1 (en) | 2003-09-23 |
US6841842B2 (en) | 2005-01-11 |
US20040036134A1 (en) | 2004-02-26 |
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