US20030019584A1 - Chuck assembly of etching apparatus for preventing byproducts - Google Patents
Chuck assembly of etching apparatus for preventing byproducts Download PDFInfo
- Publication number
- US20030019584A1 US20030019584A1 US10/054,414 US5441402A US2003019584A1 US 20030019584 A1 US20030019584 A1 US 20030019584A1 US 5441402 A US5441402 A US 5441402A US 2003019584 A1 US2003019584 A1 US 2003019584A1
- Authority
- US
- United States
- Prior art keywords
- wafer
- edge
- edge ring
- chuck assembly
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005530 etching Methods 0.000 title claims abstract description 22
- 239000006227 byproduct Substances 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Definitions
- the present invention relates to an etching apparatus of a semiconductor device, and more particularly, to an etching apparatus comprising a chuck assembly for preventing byproducts being formed along an edge portion of a wafer, thereby improving a production yield of a semiconductor device.
- an etching process of semiconductor devices is performed to etch a certain portion of a wafer exposed by a photo-resist patterning process.
- a plasma etching process comprises supplying a process gas on a wafer positioned between upper and lower electrodes, and then applying high frequency power to charge the process gas to a plasma state. The plasma then reacts with the portion of the wafer exposed during a photo-resist patterning process. It is required that the plasma-state gas uniformly reacts with the entire surface of the wafer.
- FIG. 1 is a sectional view of a chuck assembly of a conventional etching apparatus
- FIG. 2 is an enlarged sectional view of the portion II in FIG. 1.
- a chuck assembly comprises a main body 12 for supporting a central portion of a wafer W except an edge portion of the wafer W.
- An edge ring 14 is provided on an edge portion of the chuck main body 12 .
- the edge ring 14 comprises a stepped portion and is made of similar silicon material as the wafer W. High frequency power is applied to an upper electrode 10 of the wafer W.
- An inner side portion of the edge ring 14 comprises a step shape having a predetermined thickness for supporting the edge portion of the wafer W exposed by the step edge portion of the chuck main body 12 .
- the bottom portion of the edge ring 14 is extended to the edge portion of the chuck body 12 and is supported by an insulating ring 16 fixed to a side wall of the chuck body 12 .
- the edge ring 14 serves to distribute a plasma gas up to the edge portion of the wafer W in response to the high-frequency power applied to the upper electrode 10 of the wafer W.
- the plasma gas affects the entire surface of the wafer W.
- a slanted portion B at the edge side portion of the wafer W cannot be sufficiently etched to a desired thickness during the etching process.
- residual byproducts of a cone shape remain at the slanted portion B of the wafer W.
- these cone shaped residuals form a flow shaped pattern at a flat portion F on an inferior wafer along the edge portion of the wafer W during a following process, thereby decreasing a production yield and productivity thereof.
- an etching apparatus comprising a chuck assembly capable of improving an etching rate at an edge portion of a wafer, thereby preventing byproducts from being formed along the edge portion of the wafer.
- a chuck assembly of an etching apparatus comprises a chuck body comprising a stepped portion at an edge side portion of the chuck body, for supporting a central portion of a wafer; an edge ring, received in the stepped portion of the chuck body, for supporting an edge portion of the wafer, wherein the edge ring has less resistance than the resistance of the wafer; and an insulating ring provided at a surrounding portion of the chuck body, for supporting a bottom portion of the edge ring, the bottom portion of the edge ring being extended toward outside of the chuck body.
- the difference in the resistance between the edge ring and the wafer is preferably about 0.005 to about 4.5 ⁇ .
- the resistance of the edge ring is about 3.5 to about 1.5 ⁇ .
- the edge ring preferably comprises a slanted step portion whose surface forms an angle of about 40 to about 80 degrees relative to a normal to the wafer surface.
- the slanted step portion of the edge ring begins from about 1.5 to about 4.5 mm, more preferably, about 1.5 to about 2.5 mm from the edge portion of the wafer.
- a chuck assembly for a semiconductor etching apparatus comprises a chuck body for supporting a semiconductor wafer; an edge ring, disposed on the chuck body, for supporting an edge portion of the wafer; an insulating ring, disposed on the outside portion of the chuck body, for supporting the edge ring; wherein the electrical resistance of the edge ring is less than the electrical resistance of the wafer so as to uniformly etch the portion of the wafer supported by the edge ring during an etch process.
- FIG. 1 is a sectional view showing a chuck assembly of a conventional etching apparatus
- FIG. 2 is an enlarged sectional view of the portion II of the chuck assembly of FIG. 1;
- FIG. 3 is a plane view illustrating cone shaped residuals remained on a wafer in using the chuck assembly of FIG. 1 to etch the wafer;
- FIG. 4 is a partial sectional view illustrating a chuck assembly of an etching apparatus according to an embodiment of the present invention.
- FIG. 4 is a partial sectional view illustrating a chuck assembly of an etching apparatus according to an embodiment of the present invention.
- a chuck assembly according to an embodiment of the present invention improves an accuracy of etching at an edge portion of a wafer and enables high frequency to be uniformly distributed over the wafer.
- a chuck assembly according to an embodiment of the present invention comprises a chuck body 12 for supporting a center portion of a wafer W (except an edge portion of the wafer W).
- An edge ring 20 which is formed in a stepped portion in the edge portion of the chuck body 12 , supports an edge portion of the wafer W.
- An insulating ring (see, 16 in FIG. 1) is provided at a surrounding portion of the chuck body 12 for supporting a bottom portion of the edge ring 20 extended toward outside of the chuck body 12 .
- the edge ring 20 is supported by the stepped portion of the chuck body 12 and the edge ring 20 comprises a stepped portion at an inner side portion thereof.
- the edge ring 20 has less electrical resistance than the electrical resistance of the wafer W such that the difference in the resistance between the edge ring 20 and the wafer W is less than about 0.005 to about 4.5 ⁇ .
- the wafer W preferably has resistance of about 5 106 .
- edge ring 20 has less resistance than the resistance of the wafer W
- high frequency power is evenly activated at the edge portion of the wafer W (that is placed on the edge ring 20 and the stepped portion of the chuck body 12 ), thereby effectively etching a slant portion (see, B in FIG. 2) at the edge portion of the wafer W and preventing cone shaped residuals from remaining along the edge portion of the wafer W.
- surface “A” between an upper portion P′ and lower portion P of the inner side portion of the edge ring 14 is slanted at an angle ( ⁇ ) of about 15 degrees with respect to a vertical line (which, as shown, is a normal to surface of the wafer).
- ⁇ angle
- the upper portion P′ has an acute angle to the normal, i.e., keen-edged, the upper portion P′ serves to concentrate the plasma effect of high frequency power on undesired portions, thereby decreasing the etch rate at the edge portion of the wafer W.
- the structure of the edge ring 20 comprises a surface “a” between an upper portion p′ and a lower portion p at an inner stepped portion of the edge ring 20 .
- the surface “a” is gently slanted with a normal in an angle ( ⁇ ′) of about 40 to about 80 degrees, relative to a normal to the wafer surface.
- the lower portion p of the edge ring 20 has a longer distance 1 from the edge portion of the wafer W than a distance L of the lower portion P of the edge ring 14 as shown in FIG. 2.
- the distance 1 may have a range of about 1.5 to about 4.5 mm, more preferably a range of about 1.5 to about 2.5 mm.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A chuck assembly of an etching apparatus capable of improving an etching rate at an edge portion of a wafer, thereby preventing byproducts from being formed along the edge portion of the wafer is disclosed. The chuck assembly comprises a chuck body comprising a stepped portion at an edge side portion of the chuck body for supporting a central portion of a wafer; an edge ring, received in the stepped portion of the chuck body, for supporting an edge portion of the wafer, wherein the edge ring has less resistance than the resistance of the wafer; and an insulating ring provided at a surrounding portion of the chuck body, for supporting a bottom portion of the edge ring, the bottom portion of the edge ring being extended toward outside of the chuck body.
Description
- This application is based on Korean Patent Application No. 2001-44892 filed on Jul. 25, 2001.
- 1. Technical Field
- The present invention relates to an etching apparatus of a semiconductor device, and more particularly, to an etching apparatus comprising a chuck assembly for preventing byproducts being formed along an edge portion of a wafer, thereby improving a production yield of a semiconductor device.
- 2. Description of Related Art
- Generally, an etching process of semiconductor devices, for example, a plasma etching process, is performed to etch a certain portion of a wafer exposed by a photo-resist patterning process. Typically, a plasma etching process comprises supplying a process gas on a wafer positioned between upper and lower electrodes, and then applying high frequency power to charge the process gas to a plasma state. The plasma then reacts with the portion of the wafer exposed during a photo-resist patterning process. It is required that the plasma-state gas uniformly reacts with the entire surface of the wafer.
- FIG. 1 is a sectional view of a chuck assembly of a conventional etching apparatus, and FIG. 2 is an enlarged sectional view of the portion II in FIG. 1. Referring to FIG. 1, a chuck assembly comprises a
main body 12 for supporting a central portion of a wafer W except an edge portion of the wafer W. Anedge ring 14 is provided on an edge portion of the chuckmain body 12. Theedge ring 14 comprises a stepped portion and is made of similar silicon material as the wafer W. High frequency power is applied to anupper electrode 10 of the wafer W. - An inner side portion of the
edge ring 14, as shown in FIGS. 1 and 2, comprises a step shape having a predetermined thickness for supporting the edge portion of the wafer W exposed by the step edge portion of the chuckmain body 12. The bottom portion of theedge ring 14 is extended to the edge portion of thechuck body 12 and is supported by aninsulating ring 16 fixed to a side wall of thechuck body 12. - When an etching process is performed with the conventional chuck assembly, the
edge ring 14 serves to distribute a plasma gas up to the edge portion of the wafer W in response to the high-frequency power applied to theupper electrode 10 of the wafer W. Thus, the plasma gas affects the entire surface of the wafer W. However, a slanted portion B at the edge side portion of the wafer W cannot be sufficiently etched to a desired thickness during the etching process. As a result, residual byproducts of a cone shape remain at the slanted portion B of the wafer W. As shown in FIG. 3, these cone shaped residuals form a flow shaped pattern at a flat portion F on an inferior wafer along the edge portion of the wafer W during a following process, thereby decreasing a production yield and productivity thereof. - To solve the problem, it is an object of the present invention to provide an etching apparatus comprising a chuck assembly capable of improving an etching rate at an edge portion of a wafer, thereby preventing byproducts from being formed along the edge portion of the wafer.
- According to an aspect of the present invention, a chuck assembly of an etching apparatus is provided. The chuck assembly comprises a chuck body comprising a stepped portion at an edge side portion of the chuck body, for supporting a central portion of a wafer; an edge ring, received in the stepped portion of the chuck body, for supporting an edge portion of the wafer, wherein the edge ring has less resistance than the resistance of the wafer; and an insulating ring provided at a surrounding portion of the chuck body, for supporting a bottom portion of the edge ring, the bottom portion of the edge ring being extended toward outside of the chuck body.
- The difference in the resistance between the edge ring and the wafer is preferably about 0.005 to about 4.5 Ω. For example, the resistance of the edge ring is about 3.5 to about 1.5 Ω. The edge ring preferably comprises a slanted step portion whose surface forms an angle of about 40 to about 80 degrees relative to a normal to the wafer surface. The slanted step portion of the edge ring begins from about 1.5 to about 4.5 mm, more preferably, about 1.5 to about 2.5 mm from the edge portion of the wafer.
- According to another aspect of the present invention, a chuck assembly for a semiconductor etching apparatus is provided. The chuck assembly comprises a chuck body for supporting a semiconductor wafer; an edge ring, disposed on the chuck body, for supporting an edge portion of the wafer; an insulating ring, disposed on the outside portion of the chuck body, for supporting the edge ring; wherein the electrical resistance of the edge ring is less than the electrical resistance of the wafer so as to uniformly etch the portion of the wafer supported by the edge ring during an etch process.
- The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of preferred embodiments of the invention with reference to the drawings, in which;
- FIG. 1 is a sectional view showing a chuck assembly of a conventional etching apparatus;
- FIG. 2 is an enlarged sectional view of the portion II of the chuck assembly of FIG. 1;
- FIG. 3 is a plane view illustrating cone shaped residuals remained on a wafer in using the chuck assembly of FIG. 1 to etch the wafer; and
- FIG. 4 is a partial sectional view illustrating a chuck assembly of an etching apparatus according to an embodiment of the present invention.
- Herein after, the present invention will be described in detail with reference to the accompanying drawings. It should be noted that similar reference numerals are used in the accompanying drawings to designate similar or equivalent parts or portions. Further, although exemplary specifications will be provided in the following discussion to provide a thorough understanding of the present invention, it is to be understood by those one skilled in the art that the present invention can be achieved without such specifications. A detailed description of well-known functions and structures will be omitted so as to clarify key points of the present invention.
- FIG. 4 is a partial sectional view illustrating a chuck assembly of an etching apparatus according to an embodiment of the present invention. Advantageously, a chuck assembly according to an embodiment of the present invention improves an accuracy of etching at an edge portion of a wafer and enables high frequency to be uniformly distributed over the wafer.
- As shown in FIG. 4, a chuck assembly according to an embodiment of the present invention comprises a
chuck body 12 for supporting a center portion of a wafer W (except an edge portion of the wafer W). Anedge ring 20, which is formed in a stepped portion in the edge portion of thechuck body 12, supports an edge portion of the wafer W. An insulating ring (see, 16 in FIG. 1) is provided at a surrounding portion of thechuck body 12 for supporting a bottom portion of theedge ring 20 extended toward outside of thechuck body 12. Theedge ring 20 is supported by the stepped portion of thechuck body 12 and theedge ring 20 comprises a stepped portion at an inner side portion thereof. - Preferably, the
edge ring 20 has less electrical resistance than the electrical resistance of the wafer W such that the difference in the resistance between theedge ring 20 and the wafer W is less than about 0.005 to about 4.5 Ω. For instance, if theedge ring 20 has resistance of about 1.5 to about 3.5 Ω, the wafer W preferably has resistance of about 5 106 . - Advantageously, since the
edge ring 20 has less resistance than the resistance of the wafer W, high frequency power is evenly activated at the edge portion of the wafer W (that is placed on theedge ring 20 and the stepped portion of the chuck body 12), thereby effectively etching a slant portion (see, B in FIG. 2) at the edge portion of the wafer W and preventing cone shaped residuals from remaining along the edge portion of the wafer W. - Referring back to FIG. 2, surface “A” between an upper portion P′ and lower portion P of the inner side portion of the
edge ring 14 is slanted at an angle (□) of about 15 degrees with respect to a vertical line (which, as shown, is a normal to surface of the wafer). In other words, because the upper portion P′ has an acute angle to the normal, i.e., keen-edged, the upper portion P′ serves to concentrate the plasma effect of high frequency power on undesired portions, thereby decreasing the etch rate at the edge portion of the wafer W. - In contrast, the structure of the
edge ring 20 according to an embodiment of the present invention, as shown in FIG. 4, comprises a surface “a” between an upper portion p′ and a lower portion p at an inner stepped portion of theedge ring 20. The surface “a” is gently slanted with a normal in an angle (□′) of about 40 to about 80 degrees, relative to a normal to the wafer surface. - Further, the lower portion p of the
edge ring 20 according to an embodiment of the present invention has a longer distance 1 from the edge portion of the wafer W than a distance L of the lower portion P of theedge ring 14 as shown in FIG. 2. The distance 1 may have a range of about 1.5 to about 4.5 mm, more preferably a range of about 1.5 to about 2.5 mm. - With a chuck assembly of an etching apparatus according to an embodiment of the present invention, high frequency power that is applied to a wafer during an etching process effectively and uniformly distributes a plasma gas over a wafer such that an exposed portion of the wafer is accurately and evenly etched by the plasma gas, thereby preventing the formation of cone-shaped residuals along an edge portion of the wafer.
- While the invention has been described in terms of preferred embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the sprit and scope of the appended claims.
Claims (12)
1. A chuck assembly of an etching apparatus, the chuck assembly comprising:
a chuck body comprising a stepped portion at an edge side portion of the chuck body, for supporting a central portion of a wafer;
an edge ring, received in the stepped portion of the chuck body, for supporting an edge portion of the wafer, wherein the edge ring has less resistance than the resistance of the wafer; and
an insulating ring provided at a surrounding portion of the chuck body, for supporting a bottom portion of the edge ring, the bottom portion of the edge ring being extended toward outside of the chuck body.
2. The chuck assembly of claim 1 , wherein the difference in the resistance between the edge ring and the wafer is about 0.005 to about 4.5 Ω.
3. The chuck assembly of claim 1 , wherein the resistance of the edge ring is about 3.5 to about 1.5 Ω.
4. The chuck assembly of claim 1 , wherein the edge ring comprises a slanted step portion whose surface forms an angle of about 40 to about 80 degrees relative to a normal to the wafer surface.
5. The chuck assembly of claim 4 , wherein the slanted step portion of the edge ring begins from about 1.5 to about 4.5 mm from the edge portion of the wafer.
6. The chuck assembly of claim 4 , wherein the slanted step portion of the edge ring begins from about 1.5 to about 2.5 mm from the edge portion of the wafer.
7. A chuck assembly for a semiconductor etching apparatus, the chuck assembly comprises:
a chuck body for supporting a semiconductor wafer;
an edge ring, disposed on the chuck body, for supporting an edge portion of the wafer;
an insulating ring, disposed on the outside portion of the chuck body, for supporting the edge ring;
wherein the electrical resistance of the edge ring is less than the electrical resistance of the wafer so as to uniformly etch the portion of the wafer supported by the edge ring during an etch process.
8. The chuck assembly of claim 7 , wherein the difference in the electrical resistance between the edge ring and the wafer is about 0.005 to about 4.5 Ω.
9. The chuck assembly of claim 7 , wherein the electrical resistance of the edge ring is about 3.5 to about 1.5 Ω.
10. The chuck assembly of claim 7 , wherein the edge ring comprises a slanted step portion whose surface forms an angle of about 40 to about 80 degrees relative to a normal to the wafer surface.
11. The chuck assembly of claim 10 , wherein the slanted step portion of the edge ring begins from about 1.5 to about 4.5 mm from the edge portion of the wafer.
12. The chuck assembly of claim 10 , wherein the slanted step portion of the edge ring begins from about 1.5 to about 2.5 mm from the edge portion of the wafer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0044892A KR100397891B1 (en) | 2001-07-25 | 2001-07-25 | chuck assembly of etching equipment for fabricating semiconductor device |
KR2001-44892 | 2001-07-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030019584A1 true US20030019584A1 (en) | 2003-01-30 |
Family
ID=19712525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/054,414 Abandoned US20030019584A1 (en) | 2001-07-25 | 2002-01-22 | Chuck assembly of etching apparatus for preventing byproducts |
Country Status (4)
Country | Link |
---|---|
US (1) | US20030019584A1 (en) |
JP (1) | JP2003059913A (en) |
KR (1) | KR100397891B1 (en) |
DE (1) | DE10203146B4 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050056627A1 (en) * | 2003-09-12 | 2005-03-17 | Orbotech Ltd | Micro-machining employing multiple independently focused and independently steered beams |
US20100101729A1 (en) * | 2008-10-28 | 2010-04-29 | Applied Materials, Inc. | Process kit having reduced erosion sensitivity |
US20180051375A1 (en) * | 2016-08-19 | 2018-02-22 | Samsung Electronics Co., Ltd. | Substrate processing apparatus |
US20200043740A1 (en) * | 2017-05-31 | 2020-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for plasma etcher |
CN112542415A (en) * | 2019-09-20 | 2021-03-23 | 夏泰鑫半导体(青岛)有限公司 | Wafer processing apparatus and semiconductor processing station |
CN112708871A (en) * | 2019-10-25 | 2021-04-27 | 联芯集成电路制造(厦门)有限公司 | Carrier ring for use in deposition chamber |
US11251026B2 (en) * | 2017-03-31 | 2022-02-15 | Mattson Technology, Inc. | Material deposition prevention on a workpiece in a process chamber |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5069452B2 (en) | 2006-04-27 | 2012-11-07 | アプライド マテリアルズ インコーポレイテッド | Substrate support with electrostatic chuck having dual temperature zones |
US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
KR101445742B1 (en) * | 2014-04-11 | 2014-10-06 | (주)티티에스 | Substrate holder unit |
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US5942039A (en) * | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
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US5292399A (en) * | 1990-04-19 | 1994-03-08 | Applied Materials, Inc. | Plasma etching apparatus with conductive means for inhibiting arcing |
US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
US5740009A (en) * | 1996-11-29 | 1998-04-14 | Applied Materials, Inc. | Apparatus for improving wafer and chuck edge protection |
KR200163027Y1 (en) * | 1997-05-26 | 1999-12-15 | 김영환 | Etching chamber for semiconductor wafer |
KR20000011739U (en) * | 1998-12-08 | 2000-07-05 | 김영환 | Focus ring structure of wiring process etching device |
KR20010029086A (en) * | 1999-09-29 | 2001-04-06 | 윤종용 | Wafer clamp |
KR20010068847A (en) * | 2000-01-10 | 2001-07-23 | 윤종용 | Dry etcher comprising focus ring surrounding chuck. |
US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
-
2001
- 2001-07-25 KR KR10-2001-0044892A patent/KR100397891B1/en not_active IP Right Cessation
-
2002
- 2002-01-22 US US10/054,414 patent/US20030019584A1/en not_active Abandoned
- 2002-01-28 DE DE10203146A patent/DE10203146B4/en not_active Expired - Fee Related
- 2002-07-02 JP JP2002193531A patent/JP2003059913A/en active Pending
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US5891348A (en) * | 1996-01-26 | 1999-04-06 | Applied Materials, Inc. | Process gas focusing apparatus and method |
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US5942039A (en) * | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050056627A1 (en) * | 2003-09-12 | 2005-03-17 | Orbotech Ltd | Micro-machining employing multiple independently focused and independently steered beams |
US20100101729A1 (en) * | 2008-10-28 | 2010-04-29 | Applied Materials, Inc. | Process kit having reduced erosion sensitivity |
US20180051375A1 (en) * | 2016-08-19 | 2018-02-22 | Samsung Electronics Co., Ltd. | Substrate processing apparatus |
US10465290B2 (en) * | 2016-08-19 | 2019-11-05 | Samsung Electronics Co., Ltd. | Substrate processing apparatus |
US11251026B2 (en) * | 2017-03-31 | 2022-02-15 | Mattson Technology, Inc. | Material deposition prevention on a workpiece in a process chamber |
US20200043740A1 (en) * | 2017-05-31 | 2020-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for plasma etcher |
CN112542415A (en) * | 2019-09-20 | 2021-03-23 | 夏泰鑫半导体(青岛)有限公司 | Wafer processing apparatus and semiconductor processing station |
CN112708871A (en) * | 2019-10-25 | 2021-04-27 | 联芯集成电路制造(厦门)有限公司 | Carrier ring for use in deposition chamber |
US11795544B2 (en) | 2019-10-25 | 2023-10-24 | United Semiconductor (Xiamen) Co., Ltd. | Carrier ring used in a deposition chamber |
Also Published As
Publication number | Publication date |
---|---|
JP2003059913A (en) | 2003-02-28 |
DE10203146A1 (en) | 2003-02-20 |
KR100397891B1 (en) | 2003-09-19 |
KR20030010111A (en) | 2003-02-05 |
DE10203146B4 (en) | 2006-03-09 |
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