US20020159223A1 - Solid electrolyte capacitor - Google Patents
Solid electrolyte capacitor Download PDFInfo
- Publication number
- US20020159223A1 US20020159223A1 US10/018,134 US1813402A US2002159223A1 US 20020159223 A1 US20020159223 A1 US 20020159223A1 US 1813402 A US1813402 A US 1813402A US 2002159223 A1 US2002159223 A1 US 2002159223A1
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- United States
- Prior art keywords
- electrolytic capacitor
- solid electrolytic
- amended
- layer
- valve metal
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- 239000003990 capacitor Substances 0.000 title claims abstract description 49
- 239000007784 solid electrolyte Substances 0.000 title claims abstract description 28
- 239000010410 layer Substances 0.000 claims abstract description 83
- 239000007787 solid Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000011241 protective layer Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 239000011888 foil Substances 0.000 claims description 14
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical group O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 6
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229920000128 polypyrrole Polymers 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/48—Conductive polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Definitions
- the present invention relates to solid electrolytic capacitors used in a variety of electronic devices, and particularly to those on which semiconductor devices can be directly mounted.
- a solid electrolytic capacitor of the prior art comprises a dielectric oxide layer formed on a surface of a positive electrode device consisting of a sheet of valve metal such as aluminum or tantalum, a solid electrolyte layer such as functional polymer and manganese dioxide disposed on the oxide layer, and a negative electrode layer disposed on an outer surface of the solid electrolyte layer. All of them are molded entirely thereafter by an outer molding resin, and terminal electrodes are disposed to both ends of the outer molding resin.
- the above-described solid electrolytic capacitor of the prior art is a one chip type component similar to a resistor and inductance component that is mounted on a circuit board when being used.
- the present invention is intended to eliminate the above problem of the prior art, and to provide solid electrolytic capacitors that can be directly bump-connected with semiconductor devices, and also has a superior high frequency response.
- a solid electrolytic capacitor of the present invention comprises:
- a positive electrode disposed on one side of a sheet of valve metal having a dielectric layer formed on its surfaces as well as surfaces of internal pores;
- an insulating protective layer provided on their exterior surfaces, at least one surface of this insulating protective layer is provided with a via hole extending to the positive electrode and the negative electrode layer;
- a connecting bump disposed on the conductor exposed on the insulating protective layer for connection with a seimconductor device, a chip component, and the like.
- the solid electrolytic capacitor of present invention By using the solid electrolytic capacitor of present invention, a variety of chip components including semiconductor devices can be mounted to the connecting bumps on the surface of the solid electrolytic capacitor, and a scmiconductor device or a circuit having an outstanding high frequency response can be obtained.
- FIG. 1 is a perspective view of a solid electrolytic capacitor according to an exemplary embodiment of the present invention
- FIG. 2 is a sectional view of the same
- FIG. 3 is a sectional view of a sheet of valve metal used for the solid electrolytic capacitor
- FIG. 4 is a sectional view of the sheet of valve metal having a positive electrode formed on it;
- FIG. 5 is a sectional view of the sheet of valve metal with resist layers formed on both surfaces thereof;
- FIG. 6 is asectional view of the sheet of valve metal having via holes formed in it;
- FIG. 7 is another sectional view with insulating layers formed in the via holes
- FIG. 8 is a sectional view of the sheet of valve metal with a resist layer removed from one of its surfaces
- FIG. 9 is a sectional view of the sheet of valve metal having a dielectric oxide laver and a solid electrolyte layer formed thereon;
- FIG. 10 is a sectional view of the sheet of valve metal having a negative electrode layer formed on it;
- FIG. 11 is a sectional view of the sheet of valve metal having an insulating protective layer formed on it;
- FIG. 12 is a sectional view of the sheet of valve metal with conductors formed in the via holes
- FIG. 13 is a sectional view of the sheet of valve metal with connecting bumps formed on the conductors
- FIG. 14 is a sectional view of the same with terminals formed on it.
- FIG. 15 is a sectional view showing another sheet of valve metal.
- a solid electrolytic capacitor of the present invention will be described hereinafter with reference to FIG. 1 through FIG. 15.
- FIG. 1 is a perspective view of a solid electrolytic capacitor according to one exemplary embodiment of this invention
- FIG. 2 is a sectional view of the same solid electrolytic capacitor.
- sheet 1 of valve metal such as aluminum foil or sintered body of valve metal powder such as tantalum, of which one surface is etched, is provided with positive electrode 2 on that surface. If the sheet is made of aluminum foil, an unetched surface of it may be used as the positive electrode 2 , or another metal layer composed of gold, copper, nickel, and the like may be formed on it If the sheet is sintered body of valve metal powder, one surface of the sintered body, on which a dielectric layer is not formed, may be used as is. Or, a metal layer of gold, copper, nickel, tantalum, and the like may be formed by such a method as sputtering, vacuum deposition, and the like.
- the sheet 1 is anodized to form dielectric layer 3 on surfaces of the sheet as well as surfaces of internal pores, with an exception of the positive electrode 2 .
- Solid electrolyte layer 4 is also formed on die dielectric layer 3 .
- the solid electrolyte layer 4 can be formed by such means as chemical polymerization and electrolytic polymerization of electro-conductive polymer such as polypyrrole, polythiophene, and the like, or by forming a manganese dioxide layer by impregnating the sheet with manganese nitrate solution, followed by thermal decomposition.
- Negative electrode layer 5 is formed on the solid electrolyte layer 4 .
- the negative electrode layer 5 may be formed by bonding a metallic foil such as copper, or by coating electrically conductive paste on the solid electrolyte layer 4 .
- Insulating protective layer 6 for covering them entirely is formed by such means as molding, coating, and dipping using epoxy resin, for instance, or the like.
- Via holes 7 are provided in one side of the insulating protective layer 6 on the positive electrode 2 , and via holes 8 are provided through the insulating protective layer 6 , positive electrode 2 , valve metal sheet 1 , dielectric layer 3 , and solid electrolyte layer 4 .
- the via holes 7 and 8 are formed by laser beam irradiation, etching, punching, or the like process.
- Insulating layer 9 is formed on every inner wall of the via holes 8 .
- Conductors 10 are formed in the via holes 7 and 8 by copper plating or the like. The conductors 10 in the via holes 7 and the conductors 10 in the via holes 8 are electrically connected to the positive electrode 2 and the negative electrode layer 5 respectively.
- connecting bumps 11 formed of solder, gold, tin, silver, and the like on top of the conductors 10 on a surface of the sheet.
- a number of the connecting bumps 11 to be formed and their pitches are the same as the number and pitch of connecting bumps of a semiconductor device to be mounted afterward, or the former number may be larger than the latter number.
- the reason of forming the larger number of connecting bumps 11 than that of the connecting bumps of the semiconductor device is to make it possible to mount chip components such as chip resistors, chip ceramic capacitors, as well as chip inductors and the like between the remaining connecting bumps 11 , after the semiconductor device is mounted.
- terminals 12 and 13 connected respectively with the positive electrode 2 and the negative electrode layer 5 are formed on side surfaces and a bottom surface of the insulating protective layer 6 .
- a semiconductor device produced in this manner by mounting a semiconductor and the like device directly on one surface of the solid electrolytic capacitor eliminates a pattern of wiring conductors on a circuit board, and thereby substantially improves the high frequency response of the semiconductor device.
- an electrostatic capacity of the solid electrolytic capacitor can be increased when sintered body of valve metal powder such as tantalum is used as the sheet 1 .
- the positive electrode 2 if one surface of the aluminum foil or sintered body of valve metal powder is used as positive electrode 2 , another metal layer is not needed to serve as the positive electrode 2 . This reduces the component parts and improves efficiency in production, thereby giving it an advantageous in terms of cost. However, it is preferable to form a metal layer of such as gold, copper, nickel and the like for use as the positive electrode 2 on a surface of the sheet 1 in order to improve a connection reliability between the conductors 10 formed in the via holes 7 and 8 and the positive electrode 2 .
- a metal layer of such as gold, copper, nickel and the like for use as the positive electrode 2 on a surface of the sheet 1 in order to improve a connection reliability between the conductors 10 formed in the via holes 7 and 8 and the positive electrode 2 .
- electro-conductive polymer such as polypyrrole and polythiophene as the solid electrolyte layer 4 makes it possible to obtain a solid electrolytic capacitor of low impedance, i.e., the solid electrolytic capacitor with outstanding high frequency response.
- the connecting bumps 11 may be formed on both surfaces of the sheet 1 .
- the via holes 7 and 8 are so provided that they reach the negative electrode layer 5 and the positive electrode 2 respectively, each of the via holes 8 are provided with insulating layer 9 , and conductors 10 are formed in them by plating.
- the above structure provides a solid electrolytic capacitor with connecting bumps 11 on both surfaces.
- the terminals 12 and 13 are not always necessary.
- the connecting bumps 11 can be used as substitutes for the terminals 12 and 13 . Further, it is also possible to use a semiconductor device and chip component mounted on the connecting bumps 11 as substitutes for the terminals.
- FIG. 3 through FIG. 14 one example of a method of manufacturing solid electrolytic capacitors of the present invention will be described hereinafter.
- an aluminum foil of which one surface is etched, is prepared as the sheet 1 , as shown in FIG. 3.
- This aluminum foil can be obtained readily by masking one of the foil surfaces and subjecting it to etching process.
- positive electrode 2 consisting of copper is formed on unetched surface of the sheet 1 , as shown in FIG. 4.
- This positive electrode 2 can be formed by sputtering, vacuum deposition, or bonding a copper foil.
- resist layer 14 of photoresist or masking tape having a resistance to chemicals is formed on both surfaces as shown in FIG. 5.
- resist layer 14 is cured, a required number of via holes 8 are formed by punching in required places, as shown in FIG. 6.
- insulating layers 9 are formed on inner walls of the via holes 8 by an electrodeposition of resin, as shown in FIG. 7.
- resist layer 14 on a surface opposite the positive electrode 2 is stripped off or removed by dissolving, to expose die surface of the porous sheet 1 , as shown in FIG. 8. It is then anodized in anodizing solution to form dielectric layer 3 on the surface of the sheet as well as surfaces of internal pores, as shown in FIG. 9.
- the sheet with the oxidized dielectric layer 3 formed thereon is immersed in solution containing pyrrole, and successively into another solution of oxidizer, to form a thin polypyrrole layer on the dielectric layer 3 by chemical oxidatation polymerization.
- the sheet having the polypyrrole layer formed is immersed in the solution containing pyrrole, and electrolytic polymerization is carried out as the polypyrrole layer and an electrode in the solution as being positive and negative respectively. This produces another polypyrrole layer of sufficient thickness on the polypyrrole layer described above, to form the solid electrolyte layer 4 .
- resin sheet 15 having negative electrode layer 5 of copper formed on one of its surfaces is bonded in such a manner that this metal negative electrode layer 5 is electrically in contact with the solid electrolyte layer 4 , as shown in FIG. 10.
- via holes 7 are formed in predetermined locations at the side adjoining the positive electrode 2 , as shown in FIG. 11.
- insulating protective layer 6 consisting of epoxy resin or the like is formed on it, including a side surface, wide openings being in communication to the surface of the positive electrode 2 .
- Conductors 10 are then formed in the via holes 7 and 8 , and in the openings by plating copper or the like on their inner surfaces, as shown in FIG. 12. In this process, the conductors 10 in the via holes 7 and the conductors 10 in the via holes 8 are so formed that they are electrically in contact with the positive electrode 2 and the negative electrode layer 5 respectively.
- connecting bumps 11 are formed with solder, gold, tin, or silver on the conductors 10 exposed above the insulating protective layer 6 , as shown in FIG. 13. Further, terminals 12 and 13 to be connected with the positive electrode 2 and the negative electrode layer 5 respectively are formed on side surfaces and bottom surface, as shown in FIG. 14, to complete the solid electrolytic capacitor.
- tantalum foil 16 and sintered body of valve metal powder are used for the sheet, as another example, sintered body 17 of tantalum is bonded to one side of the tantalum foil 16 , as shown in FIG. 15, to construct the sheet 1 .
- a solid electrolytic capacitor is then produced following the same process as in the case of the foregoing embodiment that uses aluminum foil.
- the solid electrolytic capacitor of the present invention because of the above structure, is able to compose a semiconductor device by connecting a semiconductor directly on a surface of the solid electrolytic capacitor where the connecting bumps are formed. Since this can constitute an electric circuit, or the semiconductor device having considerably superior high frequency response, it can become a useful device in constructing a digital circuit. Accordingly, the solid electrolytic capacitor of this invention is quite suitable for use in a digital circuit that requires a high-speed response.
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Description
- The present invention relates to solid electrolytic capacitors used in a variety of electronic devices, and particularly to those on which semiconductor devices can be directly mounted.
- A solid electrolytic capacitor of the prior art comprises a dielectric oxide layer formed on a surface of a positive electrode device consisting of a sheet of valve metal such as aluminum or tantalum, a solid electrolyte layer such as functional polymer and manganese dioxide disposed on the oxide layer, and a negative electrode layer disposed on an outer surface of the solid electrolyte layer. All of them are molded entirely thereafter by an outer molding resin, and terminal electrodes are disposed to both ends of the outer molding resin.
- The above-described solid electrolytic capacitor of the prior art is a one chip type component similar to a resistor and inductance component that is mounted on a circuit board when being used.
- However, although there has been a demand for electronic components having good high frequency response according to a digitization of circuits in these days, the conventional solid electrolytic capacitors of the above kind that are surface-mounted on a circuit board together with semiconductor devices had a problem that they lower the high frequency response of the circuits.
- The present invention is intended to eliminate the above problem of the prior art, and to provide solid electrolytic capacitors that can be directly bump-connected with semiconductor devices, and also has a superior high frequency response.
- A solid electrolytic capacitor of the present invention comprises:
- a positive electrode disposed on one side of a sheet of valve metal having a dielectric layer formed on its surfaces as well as surfaces of internal pores;
- a solid electrolyte layer and a negative electrode layer disposed on the dielectric layer of valve metal;
- an insulating protective layer provided on their exterior surfaces, at least one surface of this insulating protective layer is provided with a via hole extending to the positive electrode and the negative electrode layer;
- a conductor connected electrically to one of the electrodes but insulated from the other provided in the via hole; and
- a connecting bump disposed on the conductor exposed on the insulating protective layer for connection with a seimconductor device, a chip component, and the like.
- By using the solid electrolytic capacitor of present invention, a variety of chip components including semiconductor devices can be mounted to the connecting bumps on the surface of the solid electrolytic capacitor, and a scmiconductor device or a circuit having an outstanding high frequency response can be obtained.
- FIG. 1 is a perspective view of a solid electrolytic capacitor according to an exemplary embodiment of the present invention;
- FIG. 2 is a sectional view of the same;
- FIG. 3 is a sectional view of a sheet of valve metal used for the solid electrolytic capacitor;
- FIG. 4 is a sectional view of the sheet of valve metal having a positive electrode formed on it;
- FIG. 5 is a sectional view of the sheet of valve metal with resist layers formed on both surfaces thereof;
- FIG. 6 is asectional view of the sheet of valve metal having via holes formed in it;
- FIG. 7 is another sectional view with insulating layers formed in the via holes;
- FIG. 8 is a sectional view of the sheet of valve metal with a resist layer removed from one of its surfaces;
- FIG. 9 is a sectional view of the sheet of valve metal having a dielectric oxide laver and a solid electrolyte layer formed thereon;
- FIG. 10 is a sectional view of the sheet of valve metal having a negative electrode layer formed on it;
- FIG. 11 is a sectional view of the sheet of valve metal having an insulating protective layer formed on it;
- FIG. 12 is a sectional view of the sheet of valve metal with conductors formed in the via holes;
- FIG. 13 is a sectional view of the sheet of valve metal with connecting bumps formed on the conductors;
- FIG. 14 is a sectional view of the same with terminals formed on it; and
- FIG. 15 is a sectional view showing another sheet of valve metal.
- A solid electrolytic capacitor of the present invention will be described hereinafter with reference to FIG. 1 through FIG. 15.
- FIG. 1 is a perspective view of a solid electrolytic capacitor according to one exemplary embodiment of this invention, and FIG. 2 is a sectional view of the same solid electrolytic capacitor.
- In FIG. 1 and FIG. 2,
sheet 1 of valve metal such as aluminum foil or sintered body of valve metal powder such as tantalum, of which one surface is etched, is provided withpositive electrode 2 on that surface. If the sheet is made of aluminum foil, an unetched surface of it may be used as thepositive electrode 2, or another metal layer composed of gold, copper, nickel, and the like may be formed on it If the sheet is sintered body of valve metal powder, one surface of the sintered body, on which a dielectric layer is not formed, may be used as is. Or, a metal layer of gold, copper, nickel, tantalum, and the like may be formed by such a method as sputtering, vacuum deposition, and the like. - In addition, the
sheet 1 is anodized to formdielectric layer 3 on surfaces of the sheet as well as surfaces of internal pores, with an exception of thepositive electrode 2.Solid electrolyte layer 4 is also formed on diedielectric layer 3. Thesolid electrolyte layer 4 can be formed by such means as chemical polymerization and electrolytic polymerization of electro-conductive polymer such as polypyrrole, polythiophene, and the like, or by forming a manganese dioxide layer by impregnating the sheet with manganese nitrate solution, followed by thermal decomposition. -
Negative electrode layer 5 is formed on thesolid electrolyte layer 4. Thenegative electrode layer 5 may be formed by bonding a metallic foil such as copper, or by coating electrically conductive paste on thesolid electrolyte layer 4. Insulatingprotective layer 6 for covering them entirely is formed by such means as molding, coating, and dipping using epoxy resin, for instance, or the like. - Via
holes 7 are provided in one side of the insulatingprotective layer 6 on thepositive electrode 2, and viaholes 8 are provided through the insulatingprotective layer 6,positive electrode 2,valve metal sheet 1,dielectric layer 3, andsolid electrolyte layer 4. Thevia holes -
Insulating layer 9 is formed on every inner wall of thevia holes 8.Conductors 10 are formed in thevia holes conductors 10 in thevia holes 7 and theconductors 10 in thevia holes 8 are electrically connected to thepositive electrode 2 and thenegative electrode layer 5 respectively. - There are connecting
bumps 11 formed of solder, gold, tin, silver, and the like on top of theconductors 10 on a surface of the sheet. A number of the connectingbumps 11 to be formed and their pitches are the same as the number and pitch of connecting bumps of a semiconductor device to be mounted afterward, or the former number may be larger than the latter number. The reason of forming the larger number of connectingbumps 11 than that of the connecting bumps of the semiconductor device is to make it possible to mount chip components such as chip resistors, chip ceramic capacitors, as well as chip inductors and the like between the remaining connectingbumps 11, after the semiconductor device is mounted. - In addition,
terminals positive electrode 2 and thenegative electrode layer 5 are formed on side surfaces and a bottom surface of the insulatingprotective layer 6. - Thus, a semiconductor device produced in this manner by mounting a semiconductor and the like device directly on one surface of the solid electrolytic capacitor eliminates a pattern of wiring conductors on a circuit board, and thereby substantially improves the high frequency response of the semiconductor device.
- Besides, if aluminum foil, one surface of which is etched, is used for the
sheet 1, already established manufacturing facilities, production techniques, and know-how concerning aluminum foil for the aluminum electrolytic capacitors can effectively be used. That is,sheet 1 having the desired etched pits can be obtained readily only if one surface of the aluminum foil is masked and etched, so as to improve productivity of the solid electrolytic capacitors without making new investment on plant. - Furthermore, an electrostatic capacity of the solid electrolytic capacitor can be increased when sintered body of valve metal powder such as tantalum is used as the
sheet 1. - Moreover, if one surface of the aluminum foil or sintered body of valve metal powder is used as
positive electrode 2, another metal layer is not needed to serve as thepositive electrode 2. This reduces the component parts and improves efficiency in production, thereby giving it an advantageous in terms of cost. However, it is preferable to form a metal layer of such as gold, copper, nickel and the like for use as thepositive electrode 2 on a surface of thesheet 1 in order to improve a connection reliability between theconductors 10 formed in thevia holes positive electrode 2. - Also, a use of electro-conductive polymer such as polypyrrole and polythiophene as the
solid electrolyte layer 4 makes it possible to obtain a solid electrolytic capacitor of low impedance, i.e., the solid electrolytic capacitor with outstanding high frequency response. - In addition, as the fully established technique, there is a method of forming manganese dioxide for use as the
solid electrolyte layer 4. In the case of forming manganese dioxide, the accumulated technique of the prior art can be applied to produce a dense solid electrolyte layer. It also improves productivity as well as reliability because it is capable of controlling thickness of thesolid electrolyte layer 4. - In the foregoing embodiment, although an example, in which the connecting
bumps 11 are disposed only to one surface of the insulatingprotective layer 6 is described, the connectingbumps 11 may be formed on both surfaces of thesheet 1. In this case, the via holes 7 and 8 are so provided that they reach thenegative electrode layer 5 and thepositive electrode 2 respectively, each of the via holes 8 are provided withinsulating layer 9, andconductors 10 are formed in them by plating. The above structure provides a solid electrolytic capacitor with connectingbumps 11 on both surfaces. - In addition, although the above-described embodiment is an example having the
terminals terminals terminals bumps 11 as substitutes for the terminals. - Referring now to FIG. 3 through FIG. 14, one example of a method of manufacturing solid electrolytic capacitors of the present invention will be described hereinafter.
- First, an aluminum foil, of which one surface is etched, is prepared as the
sheet 1, as shown in FIG. 3. This aluminum foil can be obtained readily by masking one of the foil surfaces and subjecting it to etching process. - Next,
positive electrode 2 consisting of copper is formed on unetched surface of thesheet 1, as shown in FIG. 4. Thispositive electrode 2 can be formed by sputtering, vacuum deposition, or bonding a copper foil. - Then, resist
layer 14 of photoresist or masking tape having a resistance to chemicals is formed on both surfaces as shown in FIG. 5. After the resistlayer 14 is cured, a required number of viaholes 8 are formed by punching in required places, as shown in FIG. 6. Thereafter, insulatinglayers 9 are formed on inner walls of the via holes 8 by an electrodeposition of resin, as shown in FIG. 7. - Following the above, resist
layer 14 on a surface opposite thepositive electrode 2 is stripped off or removed by dissolving, to expose die surface of theporous sheet 1, as shown in FIG. 8. It is then anodized in anodizing solution to formdielectric layer 3 on the surface of the sheet as well as surfaces of internal pores, as shown in FIG. 9. The sheet with the oxidizeddielectric layer 3 formed thereon is immersed in solution containing pyrrole, and successively into another solution of oxidizer, to form a thin polypyrrole layer on thedielectric layer 3 by chemical oxidatation polymerization. The sheet having the polypyrrole layer formed is immersed in the solution containing pyrrole, and electrolytic polymerization is carried out as the polypyrrole layer and an electrode in the solution as being positive and negative respectively. This produces another polypyrrole layer of sufficient thickness on the polypyrrole layer described above, to form thesolid electrolyte layer 4. - Thereafter,
resin sheet 15 havingnegative electrode layer 5 of copper formed on one of its surfaces is bonded in such a manner that this metalnegative electrode layer 5 is electrically in contact with thesolid electrolyte layer 4, as shown in FIG. 10. Subsequently, viaholes 7 are formed in predetermined locations at the side adjoining thepositive electrode 2, as shown in FIG. 11. At the same time, insulatingprotective layer 6 consisting of epoxy resin or the like is formed on it, including a side surface, wide openings being in communication to the surface of thepositive electrode 2. -
Conductors 10 are then formed in the via holes 7 and 8, and in the openings by plating copper or the like on their inner surfaces, as shown in FIG. 12. In this process, theconductors 10 in the via holes 7 and theconductors 10 in the via holes 8 are so formed that they are electrically in contact with thepositive electrode 2 and thenegative electrode layer 5 respectively. - Finally, connecting
bumps 11 are formed with solder, gold, tin, or silver on theconductors 10 exposed above the insulatingprotective layer 6, as shown in FIG. 13. Further,terminals positive electrode 2 and thenegative electrode layer 5 respectively are formed on side surfaces and bottom surface, as shown in FIG. 14, to complete the solid electrolytic capacitor. - In addition, when
tantalum foil 16 and sintered body of valve metal powder are used for the sheet, as another example, sinteredbody 17 of tantalum is bonded to one side of thetantalum foil 16, as shown in FIG. 15, to construct thesheet 1. - A solid electrolytic capacitor is then produced following the same process as in the case of the foregoing embodiment that uses aluminum foil.
- The solid electrolytic capacitor of the present invention, because of the above structure, is able to compose a semiconductor device by connecting a semiconductor directly on a surface of the solid electrolytic capacitor where the connecting bumps are formed. Since this can constitute an electric circuit, or the semiconductor device having considerably superior high frequency response, it can become a useful device in constructing a digital circuit. Accordingly, the solid electrolytic capacitor of this invention is quite suitable for use in a digital circuit that requires a high-speed response.
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-118989 | 2000-04-20 | ||
JP2000118989A JP4479050B2 (en) | 2000-04-20 | 2000-04-20 | Solid electrolytic capacitor |
PCT/JP2001/003341 WO2001082319A1 (en) | 2000-04-20 | 2001-04-19 | Solid electrolyte capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020159223A1 true US20020159223A1 (en) | 2002-10-31 |
US6510045B2 US6510045B2 (en) | 2003-01-21 |
Family
ID=18630040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/018,134 Expired - Lifetime US6510045B2 (en) | 2000-04-20 | 2001-04-19 | Solid electrolyte capacitor |
Country Status (5)
Country | Link |
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US (1) | US6510045B2 (en) |
EP (1) | EP1204125A4 (en) |
JP (1) | JP4479050B2 (en) |
CN (1) | CN100369167C (en) |
WO (1) | WO2001082319A1 (en) |
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US20130092427A1 (en) * | 2011-10-14 | 2013-04-18 | Hon Hai Precision Industry Co., Ltd. | Printed circuit board capable of limiting electromagnetic interference |
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-
2000
- 2000-04-20 JP JP2000118989A patent/JP4479050B2/en not_active Expired - Fee Related
-
2001
- 2001-04-19 WO PCT/JP2001/003341 patent/WO2001082319A1/en active Application Filing
- 2001-04-19 CN CNB018009751A patent/CN100369167C/en not_active Expired - Fee Related
- 2001-04-19 US US10/018,134 patent/US6510045B2/en not_active Expired - Lifetime
- 2001-04-19 EP EP01921902A patent/EP1204125A4/en not_active Withdrawn
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US20060120014A1 (en) * | 2004-11-16 | 2006-06-08 | Nec Toppan Circuit Solutions, Inc. | Sheet-shaped capacitor and method for manufacture thereof |
US7317610B2 (en) * | 2004-11-16 | 2008-01-08 | Nec Toppan Circuit Solutions, Inc. | Sheet-shaped capacitor and method for manufacture thereof |
US20080266756A1 (en) * | 2007-04-27 | 2008-10-30 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and method of manufacturing the same |
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US20130092427A1 (en) * | 2011-10-14 | 2013-04-18 | Hon Hai Precision Industry Co., Ltd. | Printed circuit board capable of limiting electromagnetic interference |
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US20220392705A1 (en) * | 2017-05-15 | 2022-12-08 | KYOCERA AVX Components Corporation | Multilayer Capacitor and Circuit Board Containing the Same |
Also Published As
Publication number | Publication date |
---|---|
JP4479050B2 (en) | 2010-06-09 |
US6510045B2 (en) | 2003-01-21 |
EP1204125A1 (en) | 2002-05-08 |
JP2001307955A (en) | 2001-11-02 |
EP1204125A4 (en) | 2005-11-16 |
WO2001082319A1 (en) | 2001-11-01 |
CN100369167C (en) | 2008-02-13 |
CN1366687A (en) | 2002-08-28 |
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