US20020153248A1 - Methods of forming metal articles - Google Patents

Methods of forming metal articles Download PDF

Info

Publication number
US20020153248A1
US20020153248A1 US10/122,042 US12204202A US2002153248A1 US 20020153248 A1 US20020153248 A1 US 20020153248A1 US 12204202 A US12204202 A US 12204202A US 2002153248 A1 US2002153248 A1 US 2002153248A1
Authority
US
United States
Prior art keywords
billet
rolling
uniform
forging
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/122,042
Inventor
Ritesh Shah
Vladimir Segal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to US10/122,042 priority Critical patent/US20020153248A1/en
Assigned to HONEYWELL INTERNATIONAL, INC. reassignment HONEYWELL INTERNATIONAL, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JOHNSON MATTHEY ELECTRONICS, INC.
Publication of US20020153248A1 publication Critical patent/US20020153248A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02Alloys based on vanadium, niobium, or tantalum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21JFORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the invention relates to metal articles with fine uniform structures and textures and methods of making such articles.
  • metal articles of type described are especially useful as sputtering targets.
  • Sputtering targets of high purity metals and alloys are widely used in electronics and semiconductor industries for sputtering thin films. It is desirable to obtain large size targets.
  • a high purity tantalum article such as a sputtering target having substantially uniform texture.
  • the invention comprises a tantalum sputtering target of at least about 99.95% tantalum and a substantially uniform (100) cubic texture.
  • the billet is forged at a temperature below the minimum temperature of static recrystallization and then rolled and annealed at a time and temperature to provide the beginning stage of static recrystallization.
  • the rolling reduction per pass is desirably in accordance with a relationship of the minimum reduction per pass, the roll diameter and the desire billet thickness after forging. Generally, the reduction per pass during rolling is about 10% to 20% per pass.
  • Another embodiment the invention comprises a metal article, such as a sputtering target, having a near-to-minimum of statically crystallized grain size, and uniform texture.
  • the present process can be applied to different metals and alloys that display good ductility and workability at temperatures below corresponding temperatures of static recrystallization.
  • metals with which the invention can be applied are Al, Ti, Ta, Cu, Nb, Ni, Mo, Au, Ag, Re, Pt and other metals, as well as their alloys.
  • One embodiment of the method comprises the steps of processing an ingot to a semi-finished billet, including, for example, melting, ingot casting, homogenizing/solutionizing heat treatment, hot working to break down the cast structure, and billet preparation followed by billet shaping and thermomechanical treatment to fabricate a product, for example a sputtering target, and refine the metallurgical structure and produce a desired texture.
  • cold/warm working and annealing are used to develop extremely fine, uniform structures and strong, uniform textures that result in improvement in performance of sputtering targets.
  • FIG. 1 is a photomicrograph showing grain structure of tantalum target; center location on target, 100 ⁇ 25 microns;
  • FIG. 2 is a photomicrograph showing grain structure of tantalum target; mid-radial location on target, 100 ⁇ 25 microns;
  • FIG. 3 is a photomicrograph showing grain structure of tantalum target; edge location on target, 100 ⁇ 25 microns;
  • FIG. 4 is an inverse pole figure showing ⁇ 100 ⁇ cubic texture; center location;
  • FIG. 5 is an inverse pole figure showing ⁇ 100 ⁇ cubic texture; mid-radial location;
  • FIG. 6 is an inverse pole figure showing ⁇ 100 ⁇ cubic texture; edge location.
  • targets are thin discs fabricated from a single billet processed by rolling or upsetting-forging operations.
  • an original billet length (Ho) is reduced to a final thickness (h) and an average strain may be calculated by the formula:
  • strain in equation (2) is high enough to optimize static recrystallization only for thin targets. But even for these targets non-uniformity in strain distribution through a billet volume may significantly reduce the amount strain in some areas. Also, demands on capacity of a forging press or rolling mill necessary to provide strains of equation (2) above for large target billets may be too high for some applications. Therefore, there may be restrictions on attainable strains by rolling or forging operations.
  • the present invention includes:
  • the original billet has a cylindrical shape and a volume and length-to-diameter ratio Mo.
  • Cold upsetting is preferable, but in some cases preheating of the billet and tool to a temperature below the temperature of static recrystallization may be used to reduce working pressure and load.
  • Two thin sheets of solid lubricant (3) are placed between the billet end and forging plate (4) mounted in a press. It has been found that best results are obtained with lubricant polymers that exhibit visco-elastic behavior at working conditions, such as polyethylene, polytetrafluroethylene or polyurethane.
  • the preliminary forged billet is rolled for further reduction of thickness.
  • Cold or warm rolling may be used.
  • Rolling may be performed in two or four mutually perpendicular directions to produce a product with a circle-like shape. It is important to provide the most uniform strain distribution during rolling by controlling roll diameter-to-billet thickness ratios (/H), billet thickness-to-diameter ratio (M) and reductions per pass.
  • An important aspect is to prevent buckling along the free surface of a cylindrical billet at the beginning of rolling. It has been found that buckling area (T) is approximately equal to a billet-roll contact length (L), and buckling is eliminated if contact length exceeds a billet thickness h1 after the first pass. In other words, if L>H, then
  • the roll diameter should be at least about 10 times (9.7 in Table 1) as large as the cylindrical billet thickness.
  • use of thin billets for rolling without upsetting reduces possible reductions (1).
  • Conventional target rolling suffer from both disadvantages, that is, non-uniform and low reductions are equally unacceptable to optimize structure.
  • high ratios of roll diameter-to-billet thickness (/H) are provided by preliminary billet upsetting to the necessary thickness (H). Simultaneously the upsetting operation provides a pre-rolling billet ratio (m) of less than about 0.5 that is useful to attain uniform rolling reductions along a billet.
  • Partial rolling reductions from about 10% to 20% per pass are also useful for near uniform strain distribution in the final product. Rolling reductions lower than about 10% develop higher strains at billet surfaces while reduction more than about 18% develop higher strains at billet middle section. All these parameters define the best embodiments for performing upsetting and rolling for targets for optimum results.
  • the last step in target processing is recrystallization annealing.
  • strains from equation (3) are enough to optimize static recrystallization.
  • the lowest temperature necessary to start static recrystallization and then the shortest time necessary to complete that at all billet volume should be determined.
  • Corresponding structures have the minimum grain sizes and the lowest dispersions of grain diameters inside each local area.
  • the minimum temperature of static recrystallization may be realized as the optimal temperature for the whole billet at the shortest time. This results in very fine and uniform structures and strong, uniform texture for the target produced.
  • Another embodiment of the invention is preforming forging in a few steps with successive decrease a billet thickness and resumption of film lubricant at each step. That way forging may be prolonged to low billet thickness without distortion of frictionless conditions and strain uniformity under relative low pressure and load. If forging is continued to the final target thickness without rolling, corresponding forging textures are provided for targets. Similarly, in the special cases rolling may be performed without forging with near uniform strain distribution in accordance with the invention.
  • the composition of the resulting tantalum target is shown in Table 2, the target comprising 99.95% tantalum and balance as shown in the table.
  • Table 2 ELEMENT TYPICAL ELEMENT TYPICAL C 10 Ca ⁇ 5 O 15 Fe 15 N 15 Mg ⁇ 5 H ⁇ 5 Mn 40 K 0.001 Mo 40 Li 0.001 Nb 150 Na 0.001 Ni ⁇ 5 Al ⁇ 5 Si 15 B 2 Sn ⁇ 5 Cu ⁇ 5 Ti 5 Co ⁇ 5 W 25 Cr ⁇ 5 Zr ⁇ 5
  • GDMS Low Discharge Mass Spectroscopy
  • FIGS. 1 - 6 Coupons across the thickness of the rolled billet were cut from central, mid-radius and external areas and annealed at different temperatures during 1 hours (h and investigated for structure and texture and photomicrographs thereof are shown in FIGS. 1 - 6 .
  • FIGS. 1 - 3 are photomicrographs of the center, mid-radial and edge, respectively, showing the fine grain structure of a tantalum target.
  • FIGS. 4 - 6 are graphs showing (100) cubic texture at the center, mid-radial and edge.
  • An important advantage of the invention is the production of very fine and uniform structures and strong uniform textures at any point of a target which formerly could not be attainable.
  • the following are various billet dimensions and processing routes which can be applied to manufacture sputtering targets with uniform microstructures and crystallographic texture.
  • the method provides targets with significant improvement in sputtering target performance.
  • Step 1 Anneal the billet in vacuum
  • Step 2 Upset-forge billet using teflon as a solid lubricant at room temperature or at 572 F. to specific height required for rolling
  • Step 3 Fly-cut surfaces of the forged billet
  • Step 4 Roll the billet at room temperature to required final thickness.
  • Step 5 Anneal in vacuum to obtain a fine grain size and uniform texture
  • Step 1 Upset-forge using teflon to a height such that Mo 1.0
  • Step 2 Vacuum anneal the forged billet.
  • Step 3 Upset-forge billet using teflon to a final height as required for rolling operation
  • Step 4 Fly-cut the surfaces of the forged billet
  • Step 5 Roll the billet at room temperature to the required final thickness.
  • Step 6 Vacuum anneal the rolled target blank in vacuum to obtain fine grain size and uniform texture.
  • Step 1 Anneal the billet in vacuum
  • Step 2 Upset-forge billet using teflon as a solid lubricant at room temperature or at 572 F. to a required final height suitable for rolling.
  • Step 3 Fly-cut surfaces of the forged billet
  • Step 4 Roll the billet at room temperature to required final thickness.
  • Step 5 in vacuum to obtain a fine grain size and uniform texture
  • Step 1 Anneal the billet in vacuum
  • Step 2 Upset-forge billet using teflon as a solid lubricant at room temperature or at 572 F.
  • Step 3 Fly-cut surfaces of the forged billet
  • Step 4 Roll the billet at room temperature to required final thickness.
  • Step 5 Anneal in vacuum to obtain a fine grain size and uniform texture.
  • tantalum a 99.95 or higher purity
  • the following illustrates one embodiment of the process to obtain tantalum (a 99.95 or higher purity) target blank with a maximum grain size less than 50 microns and a uniform crystallographic texture of ⁇ 100 ⁇ across the face and through the thickness of the target.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Forging (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)

Abstract

Described is the production of a metal article with fine metallurgical structure and texture by a process that includes forging and rolling and control of the forging and rolling conditions. Also described is a metal article with a minimum of statically crystallized grain size and a uniform (100) cubic texture.

Description

  • The invention relates to metal articles with fine uniform structures and textures and methods of making such articles. In particular, metal articles of type described are especially useful as sputtering targets. [0001]
  • Sputtering targets of high purity metals and alloys are widely used in electronics and semiconductor industries for sputtering thin films. It is desirable to obtain large size targets. [0002]
  • SUMMARY OF THE INVENTION
  • In accordance with the invention there is provided a high purity tantalum article, such as a sputtering target having substantially uniform texture. In particular, the invention comprises a tantalum sputtering target of at least about 99.95% tantalum and a substantially uniform (100) cubic texture. [0003]
  • A process to provide the tantalum sputtering target is disclosed in Application No.______ filed on even date herewith, the disclosure of said application is expressly incorporated herein by reference. The process comprises: [0004]
  • 1) providing a metal billet; [0005]
  • 2) heating the billet to a forging temperature below the recrystallization temperature of the metal; [0006]
  • 3) applying a solid lubricant between the ends of the billet to be forged and press plates of a forging machine in which the billet is to be forged to reduce the friction during forging; [0007]
  • 4) forging the billet to a desired billet thickness with about 70% to 95% reduction; [0008]
  • 5) bringing the forged billet to about room temperature; [0009]
  • [0010] 6) rolling the billet to plate with a reduction in thickness per rolling pass sufficient to provide near uniform strain distribution; and
  • 7) recrystalization annealing the plate. [0011]
  • It is also advantageous to machine shallow pockets in both ends of the billet ends prior to applying the solid lubricant of sufficient thickness. Preferably, the billet is forged at a temperature below the minimum temperature of static recrystallization and then rolled and annealed at a time and temperature to provide the beginning stage of static recrystallization. [0012]
  • The rolling reduction per pass is desirably in accordance with a relationship of the minimum reduction per pass, the roll diameter and the desire billet thickness after forging. Generally, the reduction per pass during rolling is about 10% to 20% per pass. [0013]
  • Another embodiment the invention comprises a metal article, such as a sputtering target, having a near-to-minimum of statically crystallized grain size, and uniform texture. [0014]
  • The present process can be applied to different metals and alloys that display good ductility and workability at temperatures below corresponding temperatures of static recrystallization. Among metals with which the invention can be applied are Al, Ti, Ta, Cu, Nb, Ni, Mo, Au, Ag, Re, Pt and other metals, as well as their alloys. One embodiment of the method comprises the steps of processing an ingot to a semi-finished billet, including, for example, melting, ingot casting, homogenizing/solutionizing heat treatment, hot working to break down the cast structure, and billet preparation followed by billet shaping and thermomechanical treatment to fabricate a product, for example a sputtering target, and refine the metallurgical structure and produce a desired texture. By one embodiment of the process of the invention, cold/warm working and annealing are used to develop extremely fine, uniform structures and strong, uniform textures that result in improvement in performance of sputtering targets. [0015]
  • DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a photomicrograph showing grain structure of tantalum target; center location on target, 100×25 microns; [0016]
  • FIG. 2 is a photomicrograph showing grain structure of tantalum target; mid-radial location on target, 100×25 microns; [0017]
  • FIG. 3 is a photomicrograph showing grain structure of tantalum target; edge location on target, 100×25 microns; [0018]
  • FIG. 4 is an inverse pole figure showing {100} cubic texture; center location; [0019]
  • FIG. 5 is an inverse pole figure showing {100} cubic texture; mid-radial location; and [0020]
  • FIG. 6 is an inverse pole figure showing {100} cubic texture; edge location. [0021]
  • DETAILED DESCRIPTION
  • To optimize thermomechanical treatment, it is desirable to attain intensive and uniform strains before recrystallization annealing. Typically, targets are thin discs fabricated from a single billet processed by rolling or upsetting-forging operations. In both cases, an original billet length (Ho) is reduced to a final thickness (h) and an average strain may be calculated by the formula:[0022]
  • ε=(1−h/Ho)100%−=[1−(M/Mo)⅔]100%  (1)
  • where Mo=Ho/Do and M=h/d are height-to-diameter ratios of the original billet and the worked product, correspondingly. The final ratio (M) is prescribed by the desired target shape and is usually in the range of from M=0.07 to M=0.5, while the original billet ratio Mo may be in the range of from about 1.86 to 0.5 and yields limits of strain shown in previously described equation (1) as follows:[0023]
  • 73%<ε<95%  (2)
  • Strain in equation (2) is high enough to optimize static recrystallization only for thin targets. But even for these targets non-uniformity in strain distribution through a billet volume may significantly reduce the amount strain in some areas. Also, demands on capacity of a forging press or rolling mill necessary to provide strains of equation (2) above for large target billets may be too high for some applications. Therefore, there may be restrictions on attainable strains by rolling or forging operations. [0024]
  • Rolling is most suitable for processing to produce thin and large targets. But the original billet ratio (Mo) advantageously should be less than 1, otherwise the end effect during rolling of long cylindrical billets develops very strong non-uniformity in strain distribution. In addition, to provide near uniform strains even for thin billets, the roll diameter advantageously should be significantly larger than the billet thickness and the number of reductions per pass can influence the result. Because of the foregoing, rolled billets may have concave-like shapes with maximum strain at contact surfaces and minimum strains at the middle billet section that are not sufficient to optimize recrystallization and develop most useful structures. Recently published Japan Patent No 08-269701 describes a titanium target manufactured by intensive cold rolling of sheet from stock and low temperature annealing. However, this technology cannot be applied to plates and although fine grain size is described for some target parts, the Japanese patent data shows large deviation in grain diameters. [0025]
  • Strain non-uniformity from forging is much stronger than for rolling. Because of contact friction, extensive “dead metal” zones are present at the central billet area. This results in low strains inside these zones and high pressure and load for thin billets. Upsetting bulk targets from a large billet with a large thickness-to-diameter ratio requires very powerful presses and expensive tools but cannot produce products with uniform grain diameters. That is why the forging operation is mostly used for hot breakdown of cast ingots only. [0026]
  • One attempt to overcome these problems is described in Japanese Patent No 08-232061. The patent describes a combination of forging and rolling for titanium targets at temperatures below the temperature of phase transformation. The process uses a temperature below the phase transformation temperature but well above the temperature of static recrystallization for heavy worked materials. As a result, the process cannot optimize recrystallization and develop very fine and uniform structures/textures. [0027]
  • In contrast to the foregoing, the present invention includes: [0028]
  • 1) performing the forging step as frictionless upsetting to provide stress-strain uniformity and intensive working without material cracking and press over-loading; and [0029]
  • 2) performing the forging step at temperatures below the minimum temperature of static recrystallization for corresponding conditions to provide the finest and most uniform structures/textures. The steps of forging, rolling and annealing can be optimized to provide cost-effective processing and target performance. [0030]
  • The original billet has a cylindrical shape and a volume and length-to-diameter ratio Mo. Cold upsetting is preferable, but in some cases preheating of the billet and tool to a temperature below the temperature of static recrystallization may be used to reduce working pressure and load. Two thin sheets of solid lubricant (3) are placed between the billet end and forging plate (4) mounted in a press. It has been found that best results are obtained with lubricant polymers that exhibit visco-elastic behavior at working conditions, such as polyethylene, polytetrafluroethylene or polyurethane. [0031]
  • In accordance with the present invention, visco-elastic polymer film is used to entirely separate the billet and tool. During upsetting, the polymer flows into contact with the billet. It has been found that with the invention the original billet ratio (Mo) may be as large as Mo=1.86, and the polymer lubricant film enables partial reductions of up to 75%. Because of increase of the original billet ratio Mo=1.86, the limits for attainable strain (see equation (1) are much better than (2)[0032]
  • 87%<ε<95%  (3)
  • that in conjunction with uniform strain distribution allows one to optimize recrystallization in most cases. Also, thin billet after forging (up to M=0.16) provides the best conditions for following rolling. [0033]
  • The preliminary forged billet is rolled for further reduction of thickness. Cold or warm rolling may be used. Rolling may be performed in two or four mutually perpendicular directions to produce a product with a circle-like shape. It is important to provide the most uniform strain distribution during rolling by controlling roll diameter-to-billet thickness ratios (/H), billet thickness-to-diameter ratio (M) and reductions per pass. An important aspect is to prevent buckling along the free surface of a cylindrical billet at the beginning of rolling. It has been found that buckling area (T) is approximately equal to a billet-roll contact length (L), and buckling is eliminated if contact length exceeds a billet thickness h1 after the first pass. In other words, if L>H, then [0034]
  • (4) [0035] φ / H 4 ( 1 - ɛ ) 2 + ɛ 2 2 ɛ ( 4 )
    Figure US20020153248A1-20021024-M00001
  • where φ is the roll diameter, ε=(1−h/H) 100% is rolling reduction per pass. Calculations with formula (4) for different reductions are shown in Table 1. [0036]
    TABLE 1
    ε 5% 10% 15% 20% 25%
    φ/H 36 16 9.7 6.5 4.6
  • As can be seen, at an average reduction of 15% or less, the roll diameter should be at least about 10 times (9.7 in Table 1) as large as the cylindrical billet thickness. On the other hand, use of thin billets for rolling without upsetting reduces possible reductions (1). Conventional target rolling suffer from both disadvantages, that is, non-uniform and low reductions are equally unacceptable to optimize structure. In the present invention high ratios of roll diameter-to-billet thickness (/H) are provided by preliminary billet upsetting to the necessary thickness (H). Simultaneously the upsetting operation provides a pre-rolling billet ratio (m) of less than about 0.5 that is useful to attain uniform rolling reductions along a billet. Partial rolling reductions from about 10% to 20% per pass are also useful for near uniform strain distribution in the final product. Rolling reductions lower than about 10% develop higher strains at billet surfaces while reduction more than about 18% develop higher strains at billet middle section. All these parameters define the best embodiments for performing upsetting and rolling for targets for optimum results. [0037]
  • The last step in target processing is recrystallization annealing. For many metals and alloys, strains from equation (3) are enough to optimize static recrystallization. To attain this goal, first the lowest temperature necessary to start static recrystallization, and then the shortest time necessary to complete that at all billet volume should be determined. Corresponding structures have the minimum grain sizes and the lowest dispersions of grain diameters inside each local area. As the present method also provides uniform strains at any part of the billet, the minimum temperature of static recrystallization may be realized as the optimal temperature for the whole billet at the shortest time. This results in very fine and uniform structures and strong, uniform texture for the target produced. [0038]
  • Another embodiment of the invention is preforming forging in a few steps with successive decrease a billet thickness and resumption of film lubricant at each step. That way forging may be prolonged to low billet thickness without distortion of frictionless conditions and strain uniformity under relative low pressure and load. If forging is continued to the final target thickness without rolling, corresponding forging textures are provided for targets. Similarly, in the special cases rolling may be performed without forging with near uniform strain distribution in accordance with the invention. I [0039]
  • The following example illustrates one embodiment of the invention. [0040]
  • High purity tantalum (99.95% and higher) in the form of billets of about 178 mm length and about 100 mm were used. [0041]
  • The composition of the resulting tantalum target is shown in Table 2, the target comprising 99.95% tantalum and balance as shown in the table. [0042]
    TABLE 2
    ELEMENT TYPICAL ELEMENT TYPICAL
    C 10 Ca <5
    O 15 Fe 15
    N 15 Mg <5
    H <5 Mn 40
    K 0.001 Mo 40
    Li 0.001 Nb 150
    Na 0.001 Ni <5
    Al <5 Si 15
    B 2 Sn <5
    Cu <5 Ti 5
    Co <5 W 25
    Cr <5 Zr <5
  • Reported in ppm. [0043]
  • C, O, N and H by LECO analysis. [0044]
  • Na, Li and K by SIMS analysis. [0045]
  • Metallic elements by ICP (inductively Coupled Plasma). [0046]
  • or GDMS (Glow Discharge Mass Spectroscopy) analysis. Billets were upset-forged at room temperature to a thickness of 75 mm. Teflon films of 150×150 mm2 and thickness of 1.2 mm were used as lubricants for frictionless upsetting (alternatively frictionless upset-forging can also be performed at 300 deg. C). Thereafter cold rolling with a roll diameter of 915 mm was performed in sixteen passes with partial reductions of 12% per pass along four directions under an angle of 45. [0047]
  • Coupons across the thickness of the rolled billet were cut from central, mid-radius and external areas and annealed at different temperatures during 1 hours (h and investigated for structure and texture and photomicrographs thereof are shown in FIGS. [0048] 1-6. FIGS. 1-3 are photomicrographs of the center, mid-radial and edge, respectively, showing the fine grain structure of a tantalum target. FIGS. 4-6 are graphs showing (100) cubic texture at the center, mid-radial and edge.
  • An important advantage of the invention is the production of very fine and uniform structures and strong uniform textures at any point of a target which formerly could not be attainable. The following are various billet dimensions and processing routes which can be applied to manufacture sputtering targets with uniform microstructures and crystallographic texture. The method provides targets with significant improvement in sputtering target performance. [0049]
  • The following examples are illustrative for various possible starting billet dimensions: [0050]
    Billet Height, Ho 7″ 6″ 4.5
    Billet Diameter, Do 3.75″ 3.75 4.5
    Mo 1.86 1.6 1
  • Process Flow Steps for different billet dimensions. [0051]
  • Mo=1.86 [0052]
  • Step 1: Anneal the billet in vacuum [0053]
  • Step 2: Upset-forge billet using teflon as a solid lubricant at room temperature or at 572 F. to specific height required for rolling [0054]
  • Step 3: Fly-cut surfaces of the forged billet [0055]
  • Step 4: Roll the billet at room temperature to required final thickness. [0056]
  • Step 5: Anneal in vacuum to obtain a fine grain size and uniform texture [0057]
  • Alternate route for Mo=1.86 [0058]
  • Step 1: Upset-forge using teflon to a height such that Mo 1.0 [0059]
  • Step 2: Vacuum anneal the forged billet. [0060]
  • Step 3: Upset-forge billet using teflon to a final height as required for rolling operation [0061]
  • Step 4: Fly-cut the surfaces of the forged billet [0062]
  • Step 5: Roll the billet at room temperature to the required final thickness. [0063]
  • Step 6: Vacuum anneal the rolled target blank in vacuum to obtain fine grain size and uniform texture. [0064]
  • Mo=1.6 [0065]
  • Step 1: Anneal the billet in vacuum [0066]
  • Step 2: Upset-forge billet using teflon as a solid lubricant at room temperature or at 572 F. to a required final height suitable for rolling. [0067]
  • Step 3: Fly-cut surfaces of the forged billet [0068]
  • Step 4: Roll the billet at room temperature to required final thickness. [0069]
  • Step 5: in vacuum to obtain a fine grain size and uniform texture [0070]
  • Mo=1.0 [0071]
  • Step 1: Anneal the billet in vacuum [0072]
  • Step 2: Upset-forge billet using teflon as a solid lubricant at room temperature or at 572 F. [0073]
  • Step 3: Fly-cut surfaces of the forged billet [0074]
  • Step 4: Roll the billet at room temperature to required final thickness. [0075]
  • Step 5: Anneal in vacuum to obtain a fine grain size and uniform texture. [0076]
  • The following illustrates one embodiment of the process to obtain tantalum (a 99.95 or higher purity) target blank with a maximum grain size less than 50 microns and a uniform crystallographic texture of {100} across the face and through the thickness of the target. [0077]
  • 1) working a billet during thermomechanical processing by combining the frictionless upset forging and rolling; [0078]
  • 2) frictionless forging during upsetting operation that develops positive friction along contact surfaces and increases process stability; [0079]
  • 3) predetermine Parameters of upsetting operation to increase accumulated strains, reduce press capacity and enable effective rolling; [0080]
  • 4) predetermine parameters of rolling conditions to enable near uniform strain distribution and cylindrical shape (for sputtering targets) of the product; [0081]
  • [0082] 5) using as the annealing temperature the lowest temperature of static recrystallization; and
  • 6) producing a sputtering target with very fine and uniform structures and uniform strong textures not previously attainable. [0083]
  • It is apparent that various changes and modifications can be made without departing from the invention. Accordingly, the scope of the invention should be limited only by the appended claims, wherein: [0084]

Claims (4)

What is claimed is:
1. A metal article, such as a sputtering target, comprising at least about 99.95 wt. % tantalum and a substantially uniform (100) cubic texture.
2. A high purity tantalum sputtering target comprising at least about 99.95 wt. % tantalum and a substantially uniform (100) cubic texture at the target surface.
3. A high purity tantalum sputtering target according to claim 2 produced from a frictionless forged billet.
4. A high purity tantalum sputtering target according to claim 2 having substantially uniform (100) cubic texture at the center location, mid-radial location and edge locations of the target surface.
US10/122,042 1998-06-17 2002-04-12 Methods of forming metal articles Abandoned US20020153248A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/122,042 US20020153248A1 (en) 1998-06-17 2002-04-12 Methods of forming metal articles

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/098,760 US6348139B1 (en) 1998-06-17 1998-06-17 Tantalum-comprising articles
US10/014,310 US20020063056A1 (en) 1998-06-17 2001-12-11 Methods of forming metal articles
US10/122,042 US20020153248A1 (en) 1998-06-17 2002-04-12 Methods of forming metal articles

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/014,310 Division US20020063056A1 (en) 1998-06-17 2001-12-11 Methods of forming metal articles

Publications (1)

Publication Number Publication Date
US20020153248A1 true US20020153248A1 (en) 2002-10-24

Family

ID=22270767

Family Applications (3)

Application Number Title Priority Date Filing Date
US09/098,760 Expired - Lifetime US6348139B1 (en) 1998-06-17 1998-06-17 Tantalum-comprising articles
US10/014,310 Abandoned US20020063056A1 (en) 1998-06-17 2001-12-11 Methods of forming metal articles
US10/122,042 Abandoned US20020153248A1 (en) 1998-06-17 2002-04-12 Methods of forming metal articles

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US09/098,760 Expired - Lifetime US6348139B1 (en) 1998-06-17 1998-06-17 Tantalum-comprising articles
US10/014,310 Abandoned US20020063056A1 (en) 1998-06-17 2001-12-11 Methods of forming metal articles

Country Status (7)

Country Link
US (3) US6348139B1 (en)
EP (1) EP1088115A4 (en)
JP (1) JP2002518593A (en)
KR (1) KR100512295B1 (en)
CN (1) CN1283830C (en)
TW (1) TW515848B (en)
WO (1) WO1999066100A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020026965A1 (en) * 1998-11-25 2002-03-07 Michaluk Christopher A. High purity tantalum, products containing the same, and methods of making the same
US20040256226A1 (en) * 2003-06-20 2004-12-23 Wickersham Charles E. Method and design for sputter target attachment to a backing plate
US20050034503A1 (en) * 2003-06-09 2005-02-17 Spreckelsen Eric Von Method of forming sputtering articles by multidirectional deformation
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
EP2604718A1 (en) * 2010-08-09 2013-06-19 JX Nippon Mining & Metals Corporation Tantalum spattering target
US20150279637A1 (en) * 2012-12-19 2015-10-01 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and method for producing same

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6323055B1 (en) * 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
JP2001303240A (en) * 2000-04-26 2001-10-31 Toshiba Corp Sputtering target
WO2001094660A2 (en) * 2000-06-02 2001-12-13 Honeywell International Inc. Sputtering target
JP4825345B2 (en) * 2000-08-24 2011-11-30 株式会社東芝 Sputtering target, barrier layer using the same, and method of forming electronic device
CN1257998C (en) 2001-01-11 2006-05-31 卡伯特公司 Tantalum and niobium billets and methods of producing the same
CN1789476A (en) * 2001-02-20 2006-06-21 H.C.施塔克公司 Refractory metal plates with uniform texture and methods of making the same
US6770154B2 (en) 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4883546B2 (en) * 2002-09-20 2012-02-22 Jx日鉱日石金属株式会社 Method for manufacturing tantalum sputtering target
JP4263900B2 (en) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ta sputtering target and manufacturing method thereof
US6921470B2 (en) * 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US20040186810A1 (en) * 2003-02-14 2004-09-23 Michaluk Christopher A. Method of supplying sputtering targets to fabricators and other users
EP2253731B1 (en) 2003-04-01 2019-07-31 JX Nippon Mining & Metals Corporation Tantalum spattering target
CN1871372B (en) * 2003-11-06 2010-11-17 日矿金属株式会社 Tantalum sputtering target
US20050236076A1 (en) * 2003-12-22 2005-10-27 Michaluk Christopher A High integrity sputtering target material and method for producing bulk quantities of same
WO2005080961A2 (en) * 2004-02-18 2005-09-01 Cabot Corporation Ultrasonic method for detecting banding in metals
US8061177B2 (en) 2004-03-26 2011-11-22 H.C. Starck Inc. Refractory metal pots
US8252126B2 (en) * 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
CN101171362B (en) * 2005-04-28 2010-06-09 日矿金属株式会社 Sputtering target
CN101278071B (en) * 2005-10-04 2010-08-11 日矿金属株式会社 Sputtering target
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
AT506547B1 (en) 2006-03-07 2013-02-15 Cabot Corp METHOD FOR PRODUCING DEFORMED METAL OBJECTS
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US20080110746A1 (en) * 2006-11-09 2008-05-15 Kardokus Janine K Novel manufacturing design and processing methods and apparatus for sputtering targets
US9279178B2 (en) * 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
WO2009020587A1 (en) 2007-08-06 2009-02-12 H.C. Starck, Inc. Refractory metal plates with improved uniformity of texture
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
JP5696051B2 (en) * 2008-11-03 2015-04-08 トーソー エスエムディー,インク. Method for manufacturing a sputter target
JP4675421B2 (en) 2009-03-27 2011-04-20 Thk株式会社 Syringe drive unit
WO2010134417A1 (en) 2009-05-22 2010-11-25 Jx日鉱日石金属株式会社 Tantalum sputtering target
WO2011018971A1 (en) 2009-08-11 2011-02-17 Jx日鉱日石金属株式会社 Tantalum sputtering target
JP5681368B2 (en) * 2010-02-26 2015-03-04 株式会社神戸製鋼所 Al-based alloy sputtering target
US20130098759A1 (en) 2010-08-09 2013-04-25 Jx Nippon Mining & Metals Corporation Tantalum Sputtering Target
JP5731770B2 (en) * 2010-08-23 2015-06-10 株式会社東芝 Sputtering target manufacturing method and sputtering target
JP5291754B2 (en) * 2011-04-15 2013-09-18 三井金属鉱業株式会社 Sputtering target for solar cell
CN102517550B (en) * 2011-12-20 2014-07-09 宁波江丰电子材料有限公司 High purity tantalum target and preparation process thereof
WO2013141231A1 (en) 2012-03-21 2013-09-26 Jx日鉱日石金属株式会社 Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target
CN103572223B (en) * 2012-08-01 2016-01-27 宁波江丰电子材料股份有限公司 The manufacture method of tantalum target and tantalum target assembly
KR20170036121A (en) 2012-12-19 2017-03-31 제이엑스금속주식회사 Tantalum sputtering target and method for producing same
KR20170092706A (en) 2013-03-04 2017-08-11 제이엑스금속주식회사 Tantalum sputtering target and production method therefor
CN104128740A (en) * 2013-05-02 2014-11-05 宁波江丰电子材料股份有限公司 Preparation method of copper target
KR20170141280A (en) 2013-10-01 2017-12-22 제이엑스금속주식회사 Tantalum sputtering target
WO2016164269A1 (en) 2015-04-10 2016-10-13 Tosoh Smd, Inc. Method of making a tantalum sputter target and sputter targets made thereby
JP6293929B2 (en) 2015-05-22 2018-03-14 Jx金属株式会社 Tantalum sputtering target and manufacturing method thereof
CN107532287B (en) 2015-05-22 2019-11-05 捷客斯金属株式会社 Tantalum spattering target and its manufacturing method
CN108026634A (en) 2015-08-03 2018-05-11 霍尼韦尔国际公司 With improvement property without friction reflectal sputtering target
TW201738395A (en) * 2015-11-06 2017-11-01 塔沙Smd公司 Method of making a tantalum sputtering target with increased deposition rate
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
KR102445159B1 (en) * 2020-12-21 2022-09-22 한국재료연구원 Method for improving strength of metal by static recrystallization

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268328A (en) * 1964-11-03 1966-08-23 Nat Res Corp Metallurgy
US3497402A (en) * 1966-02-03 1970-02-24 Nat Res Corp Stabilized grain-size tantalum alloy
US3616282A (en) * 1968-11-14 1971-10-26 Hewlett Packard Co Method of producing thin-film circuit elements
US4000055A (en) * 1972-01-14 1976-12-28 Western Electric Company, Inc. Method of depositing nitrogen-doped beta tantalum
US4020222A (en) * 1974-06-19 1977-04-26 Siemens Aktiengesellschaft Thin film circuit
US4589932A (en) * 1983-02-03 1986-05-20 Aluminum Company Of America Aluminum 6XXX alloy products of high strength and toughness having stable response to high temperature artificial aging treatments and method for producing
US5994181A (en) * 1997-05-19 1999-11-30 United Microelectronics Corp. Method for forming a DRAM cell electrode
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6130451A (en) * 1994-03-17 2000-10-10 Sony Corporation High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
US20010023726A1 (en) * 1999-07-08 2001-09-27 Holger Koenigsmann Fabrication and bonding of copper sputter targets
US6454994B1 (en) * 2000-08-28 2002-09-24 Honeywell International Inc. Solids comprising tantalum, strontium and silicon
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246361A1 (en) 1982-02-27 1983-09-08 Philips Patentverwaltung Gmbh, 2000 Hamburg CARBON-CONTAINING SLIP LAYER
JPS6066425A (en) * 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrode and manufacture thereof
US4663120A (en) 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
JPH0621346B2 (en) 1986-06-11 1994-03-23 日本鉱業株式会社 Method for manufacturing high-purity metal tantalum target
US4889745A (en) 1986-11-28 1989-12-26 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Method for reactive preparation of a shaped body of inorganic compound of metal
JPS63216966A (en) 1987-03-06 1988-09-09 Toshiba Corp Target for sputtering
DE3712281A1 (en) * 1987-04-10 1988-10-27 Heraeus Gmbh W C METHOD FOR PRODUCING HIGHLY DUCTILE TANTALE SEMI-FINISHED PRODUCTS
US4762558A (en) 1987-05-15 1988-08-09 Rensselaer Polytechnic Institute Production of reactive sintered nickel aluminide material
US4960163A (en) 1988-11-21 1990-10-02 Aluminum Company Of America Fine grain casting by mechanical stirring
US5468401A (en) 1989-06-16 1995-11-21 Chem-Trend, Incorporated Carrier-free metalworking lubricant and method of making and using same
US5074907A (en) 1989-08-16 1991-12-24 General Electric Company Method for developing enhanced texture in titanium alloys, and articles made thereby
EP0483375B1 (en) 1990-05-15 1996-03-13 Kabushiki Kaisha Toshiba Sputtering target and production thereof
WO1992001080A1 (en) * 1990-07-03 1992-01-23 Tosoh Smd, Inc. Improved sputter target for coating compact discs, methods of use thereof, and methods of manufacture of the targets
US5087297A (en) 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
EP0535314A1 (en) 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
JPH05214523A (en) 1992-02-05 1993-08-24 Toshiba Corp Sputtering target and its manufacture
US5330701A (en) 1992-02-28 1994-07-19 Xform, Inc. Process for making finely divided intermetallic
JP3338476B2 (en) 1992-06-29 2002-10-28 住友チタニウム株式会社 Method for producing metal Ti target for sputtering
JPH0693400A (en) 1992-09-16 1994-04-05 Nkk Corp Production of electrodeposition drum made of titanium
TW234767B (en) * 1992-09-29 1994-11-21 Nippon En Kk
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
US5415829A (en) * 1992-12-28 1995-05-16 Nikko Kyodo Co., Ltd. Sputtering target
JPH06256919A (en) 1993-03-01 1994-09-13 Seiko Instr Inc Method for working titanium alloy
JPH06264232A (en) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ta sputtering target and its production
US5400633A (en) 1993-09-03 1995-03-28 The Texas A&M University System Apparatus and method for deformation processing of metals, ceramics, plastics and other materials
US5772860A (en) 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
US5513512A (en) 1994-06-17 1996-05-07 Segal; Vladimir Plastic deformation of crystalline materials
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JP2984778B2 (en) 1995-02-27 1999-11-29 株式会社住友シチックス尼崎 Forging method of high purity titanium material
JP3413782B2 (en) 1995-03-31 2003-06-09 日立金属株式会社 Titanium target for sputtering and method for producing the same
US5600989A (en) 1995-06-14 1997-02-11 Segal; Vladimir Method of and apparatus for processing tungsten heavy alloys for kinetic energy penetrators
US5673581A (en) 1995-10-03 1997-10-07 Segal; Vladimir Method and apparatus for forming thin parts of large length and width
US5766380A (en) 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US5993621A (en) 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
JPH1180942A (en) * 1997-09-10 1999-03-26 Japan Energy Corp Ta sputtering target, its production and assembled body
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6192989B1 (en) * 1999-03-02 2001-02-27 Barbara A. Tooman Temporary horseshoe
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
US6896748B2 (en) * 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268328A (en) * 1964-11-03 1966-08-23 Nat Res Corp Metallurgy
US3497402A (en) * 1966-02-03 1970-02-24 Nat Res Corp Stabilized grain-size tantalum alloy
US3616282A (en) * 1968-11-14 1971-10-26 Hewlett Packard Co Method of producing thin-film circuit elements
US4000055A (en) * 1972-01-14 1976-12-28 Western Electric Company, Inc. Method of depositing nitrogen-doped beta tantalum
US4020222A (en) * 1974-06-19 1977-04-26 Siemens Aktiengesellschaft Thin film circuit
US4589932A (en) * 1983-02-03 1986-05-20 Aluminum Company Of America Aluminum 6XXX alloy products of high strength and toughness having stable response to high temperature artificial aging treatments and method for producing
US6130451A (en) * 1994-03-17 2000-10-10 Sony Corporation High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
US5994181A (en) * 1997-05-19 1999-11-30 United Microelectronics Corp. Method for forming a DRAM cell electrode
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
US6113761A (en) * 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US20010023726A1 (en) * 1999-07-08 2001-09-27 Holger Koenigsmann Fabrication and bonding of copper sputter targets
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
US6454994B1 (en) * 2000-08-28 2002-09-24 Honeywell International Inc. Solids comprising tantalum, strontium and silicon

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7585380B2 (en) 1998-11-25 2009-09-08 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US7431782B2 (en) 1998-11-25 2008-10-07 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US20030168131A1 (en) * 1998-11-25 2003-09-11 Michaluk Christopher A. High purity tantalum, products containing the same, and methods of making the same
US20020026965A1 (en) * 1998-11-25 2002-03-07 Michaluk Christopher A. High purity tantalum, products containing the same, and methods of making the same
US6893513B2 (en) 1998-11-25 2005-05-17 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US20030037847A1 (en) * 1998-11-25 2003-02-27 Michaluk Christopher A. High purity tantalum, products containing the same, and methods of making the same
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US20050034503A1 (en) * 2003-06-09 2005-02-17 Spreckelsen Eric Von Method of forming sputtering articles by multidirectional deformation
US7228722B2 (en) 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
US20040256226A1 (en) * 2003-06-20 2004-12-23 Wickersham Charles E. Method and design for sputter target attachment to a backing plate
EP2604718A1 (en) * 2010-08-09 2013-06-19 JX Nippon Mining & Metals Corporation Tantalum spattering target
EP2604718A4 (en) * 2010-08-09 2014-01-22 Jx Nippon Mining & Metals Corp Tantalum spattering target
US20150279637A1 (en) * 2012-12-19 2015-10-01 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and method for producing same
US10490393B2 (en) * 2012-12-19 2019-11-26 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and method for producing same

Also Published As

Publication number Publication date
US20020063056A1 (en) 2002-05-30
US6348139B1 (en) 2002-02-19
EP1088115A1 (en) 2001-04-04
EP1088115A4 (en) 2005-03-30
TW515848B (en) 2003-01-01
KR20010071476A (en) 2001-07-28
CN1283830C (en) 2006-11-08
CN1307646A (en) 2001-08-08
KR100512295B1 (en) 2005-09-05
JP2002518593A (en) 2002-06-25
WO1999066100A1 (en) 1999-12-23

Similar Documents

Publication Publication Date Title
US6348139B1 (en) Tantalum-comprising articles
US6569270B2 (en) Process for producing a metal article
EP1846584B2 (en) Austenitic steel having high strength and formability method of producing said steel and use thereof
US8500928B2 (en) Sputter targets and methods of forming same by rotary axial forging
US8551267B2 (en) Monolithic aluminum alloy target and method of manufacturing
US20070007281A1 (en) Method for manufacturing thin sheets of high strength titanium alloys description
US6210502B1 (en) Processing method for high-pure titanium
US7228722B2 (en) Method of forming sputtering articles by multidirectional deformation
JP3600022B2 (en) Manufacturing method of aluminum base alloy sheet for deep drawing
CN107532287A (en) Tantalum spattering target and its manufacture method
CN113718110B (en) Preparation method of high-quality niobium plate adopting accumulated energy to control plate structure
JP3155678B2 (en) Manufacturing method of aluminum alloy sheet for automobile body sheet
US20040050464A1 (en) Method for producing a cold rolled strip that is cold formed with low degrees of deformation
KR20220146620A (en) Manufacturing method and equipment for aluminum can sheet
JP3297010B2 (en) Manufacturing method of nearβ type titanium alloy coil
Naizabekov et al. Evolution of the brass microstructure during rolling in relief and smooth rolls
TW397722B (en) Metal article with fine uniform structures and textures and process of making same
JP3977951B2 (en) Steel plate for soft hard container after processing and method for manufacturing the same
JP3600021B2 (en) Manufacturing method of aluminum base alloy sheet for deep drawing
JPH0355536B2 (en)
Gerhardt et al. Influence of Hot Working on the Properties of the Ti 6A1 4V Alloy with Special Regard to Heavy Sections

Legal Events

Date Code Title Description
AS Assignment

Owner name: HONEYWELL INTERNATIONAL, INC., NEW JERSEY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:JOHNSON MATTHEY ELECTRONICS, INC.;REEL/FRAME:013138/0292

Effective date: 20020719

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION