US20020014643A1

US20020014643A1 - Circuit-incorporating photosensitve device

Info

Publication number: US20020014643A1
Application number: US09/864,861
Authority: US
Inventors: Masaru Kubo; Toshihiko Fukushima; Zenpei Tani
Original assignee: Individual
Current assignee: Sharp Corp
Priority date: 2000-05-30
Filing date: 2001-05-25
Publication date: 2002-02-07
Anticipated expiration: 2021-05-25
Also published as: JP2001345436A; KR100460404B1; KR20010109144A; JP3717104B2; US6448614B2

Abstract

A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.

Description

BACKGROUND OF THE INVENTION

1. Field Of The Invention

The present invention relates to a circuit-incorporating photosensitive device using an SOI (Silicon on Insulator) wafer, and especially to a circuit-incorporating photosensitive device which has high sensibility and low power consumption.

2. Description Of The Related Art

A circuit-incorporating photosensitive device is widely used as an optical pickup, optical communication, or a photosensor, e.g., a photocoupler. In recent years, there has been intense demand for the higher sensibility, faster operation, and lower power consumption of circuit-incorporating photosensitive devices in all such applications.

FIG. 8 is a cross-sectional view illustrating the structure of a conventional circuit-incorporating

photosensitive device

400. The conventional circuit-incorporating photosensitive device 400 shown in FIG. 8 has a laminated structure of a P-type silicon substrate 1 and an N-type silicon substrate 4 epitaxially grown on the P-type silicon substrate 1. In this laminated structure, a photodiode 270, and a bipolar transistor 280 which is a circuit for processing signals output from the photodiode 270 are integrally provided. The N-type silicon substrate 4 is separated into plural regions by P-type embedded diffusion layers 13. The photodiode 270 and the bipolar transistor 280 are respectively provided in the regions separated by the P-type embedded diffusion layers 13.

The

photodiode

270 is of a PN junction type, formed with the laminated structure of the P-type silicon substrate 1 and the N-type silicon substrate 4.

The

bipolar transistor

280 has a P-type diffusion layer 7 formed in the N-type silicon substrate 4 near the surface thereof. An N-type diffusion layer 8 is formed in the P-type diffusion layer 7. Furthermore, the N-type silicon substrate 4 includes an N-type diffusion layer 6 which extends from the surface of the N-type silicon substrate 4 to an N-type diffusion layer 12.

An

oxide film layer

9 is provided on the entire surface of the N-type silicon substrate 4. In the bipolar transistor 280 region, the oxide film layer 9 is provided with wiring 10 a connected to the N-type diffusion layer 6, wiring 10 b connected to the P-type diffusion layer 7, and wiring 10 c connected to the N-type diffusion layer 8 (which is embedded near the surface of the P-type diffusion layer 7).

In the circuit-incorporating

photosensitive device

400 having such a structure, the photosensitivity of the photosensitive portion of the photodiode 270 depends on the photosensitivity at the PN junction, as well as the amount of the light absorption corresponding to the size and thickness of the photodiode 270.

In a circuit-incorporating photosensitive device used as an optical pickup, light having a wavelength of about 635 nm for DVD applications, about 780 nm for CD applications, about 850 nm for space optical transmission, or about 950 nm for a photosensor (e.g., a photocoupler) is normally used. The light absorption coefficients of silicon (Si) and light penetration depths into silicon for these wavelengths are shown in Table 1.

TABLE 1


			Light
	Light		absorptance
	absorption	Penetration	in an active
Wavelength	coefficient	depth	layer of 1 μm

650 nm	2500	cm ⁻¹	4	μm	22%
780 nm	1200	cm⁻¹	8.5	μm	11%
850 nm	800	cm⁻¹	12.5	μm	8%
950 nm	400	cm⁻¹	25	μm	4%

As shown in Table 1, the depths to which these light wavelengths penetrate into silicon are no less than 4 μm. Normally, the depths are greater than the thickness of the N-

type silicon substrate

4 which forms the circuit-incorporating photosensitive device 400. Thus, the PN junction between the N-type silicon substrate 4 and the P-type silicon substrate 1 is used to improve the photosensitivity of the photodiode 270 and to improve the absorptance at these light wavelengths.

On the other hand, for faster operation and lower power consumption, it is effective to use a SiGe layer (which has a higher light absorptance) as a base layer, as well as an SOI (Silicon on Insulator) wafer, as shown in, for example, Japanese Laid-Open Publication No. 6-61434.

FIG. 9 is a cross-sectional view illustrating a circuit-incorporating

photosensitive device

410 in which an SOI wafer 290 is used. The SOI wafer 290 includes a silicon substrate 1 and an N-type silicon substrate 4, with an N-type diffusion layer 3 formed on a lower surface thereof and an oxide film 2 interposed therebetween.

The N-

type silicon substrate

4 of the SOI wafer 290 is separated into plural regions by trench-type separation layers 5. A photodiode 270 and a bipolar transistor 280 are respectively provided in the regions separated by the trench-type separation layers 5. The trench-type separation layers 5 extend from the surface of the N-type silicon substrate 4, through the N-type diffusion layer 3, so as to reach the oxide film 2.

In the

photodiode

270, a P-type diffusion layer 7 a, which serves as an active layer, is formed near the surface of the N-type silicon substrate 4. An N-type diffusion layer 6 is provided so as to extend from the surface of the N-type silicon substrate 4 to the N-type diffusion layer 3.

In an NPN-type

bipolar transistor

280 which is a signal processing circuit of the photodiode 270, a base layer 7 b formed of SiGe is embedded as a P-type diffusion layer near the surface of the N-type silicon substrate 4. An N-type diffusion layer 8 is provided near the surface of the base layer 7 b. Furthermore, in the N-type silicon substrate 4, an N-type diffusion layer 6 is provided so as to extend from the N-type silicon substrate 4 to the N-type diffusion layer 3.

An

oxide film

9 is provided on the entire surface of the N-type silicon substrate 4. In the NPN-type bipolar transistor 280 region, the oxide film 9 is provided with an electrode boa connected to the N-type diffusion layer 6, a base electrode 10 b connected to the base layer 7 b, and an electrode 10 c connected to the N-type diffusion layer 8 (which is embedded near the surface of the base layer 7 b).

In the circuit-incorporating

photosensitive device

410 having such a structure, the thickness of the silicon layer 7 a, which serves as an active layer forming the photosensitive portion of the photodiode 270, is normally about 1 μm, so that there is a problem in that the amount of light absorption is small. Table 1 also shows the light absorptance at different wavelengths in the case where the thickness of the silicon active layer 7 a is 1 μm. The light absorptance is 22% for a light wavelength of 650 nm, 11% for a light wavelength of 780 nm, 8% for a light wavelength of 850 nm, and 4% for a light wavelength of 950 nm.

The

photodiode

270 has a low photosensitivity because the amount of the light absorption of each of the silicon

photosensitive layers

3 a, 4 a, and 7 a is small.

The output of the

photodiode

270 having such a low photosensitivity could be subjected to gain compensation by the signal processing circuit. However, when the gain of the output is compensated, the response speed of the signal processing circuit and the signal-to-noise ratio (S/N ratio) may decrease.

SUMMARY OF THE INVENTION

According to one aspect of the invention, there is provided a circuit-incorporating photosensitive device comprising: an SOI wafer comprising a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode comprises a photosensitive layer comprising an SiGe layer.

In one embodiment of the invention, the photosensitive layer is formed after the signal processing circuit is formed.

In one embodiment of the invention, the photosensitive layer is provided in a recess formed in the SOI wafer.

In one embodiment of the invention, the signal processing circuit comprises a high-speed transistor, and at least a portion of the high-speed transistor is formed of an SiGe layer.

In one embodiment of the invention, the SiGe layer of the photosensitive layer and the SiGe layer of the high-speed transistor are simultaneously formed.

In one embodiment of the invention, the photodiode has a reflection film provided on a bottom surface thereof.

In one embodiment of the invention, the reflection film includes a high melting point metal film.

In one embodiment of the invention, an antireflection film is provided on the photosensitive layer.

In one embodiment of the invention, the antireflection film comprises an SiN film.

In one embodiment of the invention, a thermal oxide film is formed between the photosensitive layer and the SiN layer.

In one embodiment of the invention, the antireflection film is integrally formed of the photosensitive layer.

In one embodiment of the invention, the antireflection film includes an amorphous carbon film.

In one embodiment of the invention, a phase difference between light impinging upon the photosensitive layer and light reflecting at the bottom surface of the second silicon substrate is ½ of the wavelength of the light impinging upon the photosensitive layer.

In one embodiment of the invention, the photosensitive layer is separated into plural photosensitive regions by a trench-type separation layer.

In one embodiment of the invention, the photosensitive layer is separated into plural photosensitive regions by forming the photosensitive layer with a selective epitaxial growth method.

Thus, the invention described herein makes possible the advantage of providing a circuit-incorporating photosensitive device with high-sensibility, fast operation, and low power consumption, which prevents a decrease in the SIN ratio.

This and other advantages of the present invention will become apparent to those skilled in the art upon reading and understanding the following detailed description with reference to the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a circuit-incorporating photosensitive device according to an example of the present invention. [0038]
FIG. 2 is a diagram illustrating a relationship between a composition ratio of an SiGe layer and a bandgap thereof. [0039]
FIG. 3 is a graph illustrating a relationship between wavelengths of irradiated light and absorption coefficients of an Si layer and a Ge layer. [0040]
FIG. 4 is a cross-sectional view illustrating a circuit-incorporating photosensitive device according to an example of the present invention. [0041]
FIGS. 5A to [0042] 5F are cross-sectional views illustrating steps of a fabrication method of a circuit-incorporating photosensitive device according to an example of the present invention.
FIG. 5G is a cross-sectional view illustrating a circuit-incorporating photosensitive device according to an example of the present invention. [0043]
FIG. 6 is a cross-sectional view illustrating a circuit-incorporating photosensitive device according to an example of the present invention. [0044]
FIG. 7 is a cross-sectional view illustrating a circuit-incorporating photosensitive device according to an example of the present invention. [0045]
FIG. 8 is a cross-sectional view illustrating an exemplary conventional circuit-incorporating itiphotosensitive deice. [0046]
FIG. 9 is a cross-sectional view illustrating an exemplary conventional circuit-incorporating photosensitive device having an SOI structure.[0047]

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described in detail with reference to the figures. [0048]

(Example 1)

FIG. 1 is a cross-sectional view illustrating a circuit-incorporating [0049] photosensitive device 300 according to Example 1 of the present invention. The circuit-incorporating photosensitive device 300 shown in FIG. 1 comprises an SOI wafer 29. In the circuit-incorporating photosensitive device 300, an N-type silicon substrate 4 having an N-type diffusion layer 3 formed on a lower surface thereof is provided on a silicon substrate 1, with an oxide film 2 (e.g., SiO₂) interposed between the N-type diffusion layer 3 and the silicon substrate 1. Since the SOI wafer 29 has a small parasitic capacitance, the circuit-incorporating photosensitive device 300 using the SOI wafer 29 can operate fast while requiring low power consumption.
The [0050] SOI wafer 29 includes a photodiode 27 and a bipolar transistor 28, which are formed in regions separated by trench-type separation layers 5 provided in the N-type silicon substrate 4. The photodiode 27 comprises a photosensitive layer (formed of SiGe) 17 a for receiving light. The bipolar transistor 28 constitutes a signal processing circuit of the photodiode 27. The trench-type separation layers 5 extend from the surface of the N-type silicon substrate 4, through the N-type diffusion layer 3, so as to reach the oxide film 2.
The SiGe [0051] photosensitive layer 17 a is formed near the surface of the N-type silicon substrate 4 in the photodiode 27. Specifically, the region near the surface of the N-type silicon substrate 4 is etched away to a depth corresponding to the thickness of the photosensitive layer 17 a, thereby forming a recess 35. The photosensitive layer 17 a is formed by growing a crystal of SiGe in the recess 35. The photosensitive layer 17 a serves as the photosensitive region of the photodiode 27. Furthermore, in the N-type silicon substrate 4 of the photodiode 27, an N-type diffusion layer 6 is provided which extends from the surface of the N-type silicon substrate 4 to the N-type diffusion layer 3.
The [0052] photosensitive layer 17 a of the photodiode 27 is embedded in the recess 35 provided in the N-type silicon substrate 4, and the surface of the photosensitive layer 17 a is planed so as to become flush with the surface of the N-type silicon substrate 4. Any wiring provided on the surface is similarly planed.
The [0053] bipolar transistor 28, which serves as a signal processing circuit of the photodiode 27, includes a base layer (formed of SiGe) 17 b near the surface of the N-type silicon substrate 4. An N-type diffusion 15 layer 8 is formed in the base layer 17 b. Furthermore, the N-type silicon substrate 4 includes an N-type diffusion layer 6 which extends from the surface of the N-type silicon substrate 4 to the N-type diffusion layer 3.
An [0054] oxide film layer 9 is provided on the entire surface of the N-type silicon substrate 4. In the bipolar transistor 28 region, the oxide film 9 is provided with metal wiring 10 a connected to the N-type diffusion layer 6, metal wiring 10 b connected to the base layer 17 b, and metal wiring 10 c connected to the N-type diffusion layer 8, which is formed in the base layer 17 b.
The circuit-incorporating [0055] photosensitive device 300 includes; a photodiode 27 which has significantly improved photosensitivity because the photosensitive layer 17 a which is formed of SiGe having a high light absorptance is provided in the photosensitive region of the photodiode 27. Furthermore, since the base layer 17 b of the bipolar transistor 28 is also formed of SiGe, the carrier injection efficiency of the bipolar transistor 28 is increased. Thus, the current amplification hfe is increased, thereby enabling faster operation than in conventional circuit-incorporating devices.
FIG. 2 is a graph illustrating a relationship between the composition ratio between Si and Ge in the SiGe layer and the bandgap thereof. FIG. 3 is a graph illustrating a relationship between the absorption coefficient and the wavelength of light with which the Si layer and the Ge layer are irradiated. As shown in FIG. 2, the bandgap of the SiGe layer varies in accordance with the composition ratio between Si and Ge. As the concentration of Ge relative to Si increases, the bandgap of the SiGe layer becomes narrower. As the bandgap becomes narrower, the absorption coefficient increases. Thus, the photosensitivity of the [0056] photodiode 27 featuring the SiGe photosensitive layer 17 a increases, and faster operation can be obtained.
Furthermore, the Si layer and Ge layer have different absorption coefficients as shown in FIG. 3. Thus, by using an SiGe layer which is intercrystallized with Si and Ge, the overall absorption coefficient significantly increases at certain wavelengths as compared to the case of using Si alone. [0057]
In the circuit-incorporating [0058] photosensitive device 300 shown in FIG. 1, the photosensitive layer 17 a of the photodiode 27 is designed with a thickness of not more than about 1 μm from the perspective of crystallinity. In order to ensure that a light amount of 1-1/e is absorbed in such a photosensitive layer 17 a having a thickness of 1 μm, an absorption coefficient of about 10000 cm⁻¹will be required. Therefore, in order to improve the photosensitivity of the photodiode 27 as shown in FIG. 1, the composition ratio between Si and Ge in the photosensitive layer 17 a is set so that the absorption coefficient in the wavelength band of received light is about 10000 cm⁻¹or more.
The SiGe layer forming the [0059] photosensitive layer 17 a (i.e., the active layer of the photodiode 27) and the SiGe layer forming the base layer 17 b of the bipolar transistor 28 are provided near the surface of the N-type silicon substrate 4. Thus, the SiGe layers can be formed simultaneously and the number of steps required for fabricating the circuit-incorporating photosensitive device 300 is not increased.
Furthermore, each of the SiGe layers can be a multilayer film or a superlattice layer. By employing a multilayer film or a superlattice layer, the carrier injection efficiency can be increased without increasing the thickness of the layers. [0060]
It is preferable to avoid a heat treatment after the SiGe layer is formed because the composition and the properties of the SiGe layer will be changed if it is subjected to a high temperature after it is formed. Thus, in the circuit-incorporating [0061] photosensitive device 300 shown in FIG. 1, it is preferable to form the photosensitive layer 17 a and the base layer 17 b (both of which are SiGe layers) after completing a heat diffusion process which may be used to form the bipolar transistor 28.

(Example 2)

FIG. 4 is a cross-sectional view illustrating a circuit-incorporating [0062] photosensitive device 310 according to Example 2 of the present invention. Similarly to the circuit-incorporating photosensitive device 300, the circuit-incorporating photosensitive device 310 shown in FIG. 4 comprises an SOI wafer 29. In the SOI wafer 29, a silicon substrate 4 having an N-type diffusion layer 3 formed on a lower surface thereof is provided on a silicon substrate 1, with an oxide film 2 interposed between the N-type diffusion layer 3 and the silicon substrate 1.
The [0063] SOI wafer 29 includes a photodiode 27 and a bipolar transistor 28, which are formed in regions separated by trench-type separation layers 5 provided in the N-type silicon substrate 4. The photodiode 27 comprises a photosensitive layer (formed of SiGe) 17 a for receiving light. The bipolar transistor 28 constitutes a signal processing circuit of the photodiode 27. The trench-type separation layers 5 extend from the N-type silicon substrate 4 through an N-type diffusion layer 3 so as to reach the oxide film 2. In each of the regions where the photodiode 27 and the bipolar transistor 28 are formed, an N-type diffusion layer 6 is provided along each trench-type separation layer 5 so as to extend from the surface of the N-type silicon substrate 4 to the N-type diffusion layer 3.
In the [0064] photodiode 27, a photosensitive layer 17 a formed of SiGe is laminated on the surface of the N-type silicon substrate 4. On the photosensitive layer 17 a, an antireflection film 21 is laminated. To a side of the photosensitive layer 17 a and the antireflection film 21 which are laminated together, a polysilicon layer 16 doped with P-type impurities is provided on the surface of the N-type silicon substrate 4 to bring the anode of the photodiode 27 into conduction. The regions other than the laminated portion of the photosensitive layer 17 a and the antireflection film 21 are covered with an oxide insulator film 15. On the edge of each side of the photosensitive layer 17 a and the antireflection film 21, a sidewall spacer 18 is provided.
In the [0065] oxide insulator film 15, metal wiring 22 d and 22 e are provided as electrodes extend through the oxide insulator film 15 and contacting the polysilicon layer 16 and the N-type diffusion layer 6, respectively.
In the [0066] bipolar transistor 28, a base layer 17 b formed of SiGe layer is laminated on the surface of the N-type silicon substrate 4. To each side of the base layer 17 b, a polysilicon layer 16 doped with P-type impurities is provided on the surface of the N-type silicon substrate 4 to bring the base electrode of the bipolar transistor 28 into conduction. The regions other than the base layer 17 b and the polysilicon layer 16 are covered with an oxide insulator film 15.
On the [0067] base layer 17 b, a polysilicon layer 19 doped with N-type impurities is laminated so as to form an emitter. Sidewall spacers 18 are respectively interposed between either end of the base layer 17 b and the polysilicon layer 19. Each side of the polysilicon layer 19 is embedded in the oxide insulator layer 15. The surface of the polysilicon layer 19 is also covered with the oxide insulator layer 15.
In the [0068] oxide insulator film 15, metal wiring 22 a, 22 b and 22 c are respectively provided as electrodes extending through the oxide insulator film 15 and contacting the N-type diffusion layer 6, the base layer 17 b and the polysilicon layer 16.
In order to simplify description, multilayer wiring, overcoat, etc., provided in the circuit-incorporating [0069] photosensitive device 310 are omitted in FIG. 4.
The [0070] photosensitive layer 17 a and the base layer 17 b can be formed of a multilayer film or a superlattice layer of SiGe.
FIGS. 5A to [0071] 5F are cross-sectional views illustrating a fabrication process of the circuit-incorporating photosensitive device 310 shown in FIG. 4. The method for fabricating the circuit-incorporating photosensitive device 310 is described with reference to FIGS. 5A to 5F.
First, as shown in FIG. 5A, the N-[0072] type silicon substrate 4 having the N-type diffusion layer 3 formed on a lower surface thereof is provided on the silicon substrate 1, with the oxide film 2 interposed between the N-type diffusion layer 3 and the silicon substrate 1, thus forming the SOI wafer 29.
In the case where the [0073] bipolar transistor 28 formed in the SOI wafer 29 is a CMOS transistor, the N-type diffusion layer 3 is not required. The substrate 4 is not necessarily N-type, but may be of P-type. Furthermore, the SOI wafer 29 may be formed by adhering the silicon substrate 1 and the silicon substrate 4 together, or by a method such as SIMOX.
Next, as shown in FIG. 5B, at the border of the regions of the [0074] silicon substrate 4 where the photodiode 27 and transistor 28 are to be formed, the trench-type separation layers 5 are formed. Each separation layer 5 is formed along the direction of thickness of the silicon substrate 4 so as to extend from the surface of the silicon substrate 4, through the N-type diffusion layer 3, to the oxide film 2. After each separation layer 5 is formed, in the regions where the photodiode 27 and the bipolar transistor 28 are respectively formed, the N-type diffusion layers 6 are formed along each trench-type separation layer 5. Then, the oxide film 15 is formed on the entire surface of the N-type silicon substrate 4.
After formation, the [0075] oxide film 15 of a central portion of the regions where the photodiode 27 and the bipolar transistor 28 are respectively formed is removed by etching to expose the surface of the N-type silicon substrate 4. On the exposed surface of the N-type silicon substrate 4 in the region defining the photodiode 27, the polysilicon layer 16 doped with N-type impurities (see FIG. 5C) is formed to bring the anode of the photodiode 27 into conduction. On the exposed surface of the N-type silicon substrate 4 in the region defining the bipolar transistor 28, the polysilicon layer 16 doped with P-type impurities (see FIG. 5C) is formed to bring the base electrode of the bipolar transistor 28 into conduction.
Next, as shown in FIG. 5C, portions of the [0076] oxide film 15 and the polysilicon layers 16 are removed by etching to expose the surface of the N-type silicon substrate 4 except at the farther end (from the N-type diffusion layer 6) of the polysilicon layer 16 in the region defining the photodiode 27. Also, the oxide film 15 and the polysilicon layers 16 are removed by etching to expose the surface of the N-type silicon substrate 4 except at both ends of the polysilicon layer 16 in the region defining the bipolar transistor 28.
Next, as shown in FIG. 5D, SiGe layers are simultaneously formed on the exposed surface of the N-[0077] type silicon substrate 4 in the regions defining the photodiode 27 and the bipolar transistor 28, through selective growth by a method such as MBE. Thus, the photosensitive layer 17 a as a photosensitive region of the photodiode 27 and the base layer 17 b of the bipolar transistor 28 are formed at the same time. By simultaneously forming the photosensitive layer 17 a and base layer 17 b with SiGe, the number of fabrication steps can be decreased. Alternatively, the photosensitive layer 17 a may be formed by a selective epitaxial method. In this case, as shown in FIG. 7, the photosensitive layer 17 a can be formed into separate plural photosensitive regions.
Next, [0078] sidewall spacers 18 are provided on the respective edge portions of at both ends of the photosensitive layer 17 a and the base layer 17 b. Then, as shown in FIG. 5E, the polysilicon layer 19 doped with N-type impurities is formed on the base layer 17 b and on a portion of the oxide film 15 covering the polysilicon layer 16 next to the base layer 17 b.
Next, as shown in FIG. 5F, the [0079] antireflection film 21 is formed on the photosensitive layer 17 a in the region where the photodiode 27 is located. Then, an oxide film 20 is formed on portions other than the antireflection film 21 by CVD, or the like.
By adjusting the Ge concentration of the surface side of the [0080] photosensitive layer 17 a formed of SiGe so as to be smaller than that of the internal side, a potential barrier is formed. Thus, surface recombination is restrained to prevent the photosensitivity from being lowered.
Thus, by adjusting the Ge concentration of the SiGe layer forming the [0081] photosensitive layer 17 a to be small, the surface recombination can be restrained. Thus, an SiN film can be integrally formed on the surface of the photosensitive layer 17 a as the antireflection film 21. As the circuit-incorporating photosensitive device 310′ shown in FIG. 5G, a thermal oxide film 21′, such as SiO₂, may be formed on the surface of the photosensitive layer 17 a first, and then an SiN film may be formed as the antireflection film 21. An amorphous carbon film which can be formed at a low temperature may be formed as the antireflection film 21.
Contact holes are provided in the [0082] oxide film 15 in the region defining the photodiode 27, such that the contact holes reach the surfaces of the polysilicon layer 16 and the N-type diffusion layer 6, respectively. In each of the formed contact holes, metal wiring 22 d or 22 e is provided to form an electrode. In the region defining the bipolar transistor 28, contact holes which reach one of the polysilicon layer 16, the polysilicon layer 19 on the base layer 17 b and the N-type diffusion layer 6 are formed. In each of the formed contact holes, metal wiring 22 a, 22 b or 22 c is provided to form an electrode. Thus, the circuit-incorporating photosensitive device 310 shown in FIG. 4 is completed.
The circuit-incorporating [0083] photosensitive device 310 includes the photosensitive layer 17 a, which is formed of an SiGe layer having a high light absorptance serving as the photosensitive region of the photodiode 27. Thus, the photosensitivity of the photodiode 27 is significantly improved. Also, since the base layer 17 b of the bipolar transistor 28 is formed of SiGe, the injection efficiency of the carriers in the bipolar transistor 28 is increased. Therefore, the current amplification hfe can be higher and a faster operation is achieved.
Moreover, since the [0084] antireflection layer 21 is provided on the photosensitive layer 17 a of the photodiode 27, light impinging upon the photosensitive layer 17 a can be absorbed effectively, which also improves the photosensitivity of the photodiode 27.
For the [0085] antireflection film 21 provided on the photosensitive layer 17 a, an amorphous carbon film which can be grown at a low temperature of 100° C. or less is particularly preferable. The composition and the properties of SiGe which forms the photosensitive layer 17 a will be affected by a high-temperature heat treatment. Therefore, if the amorphous carbon film is grown at the temperature of 100° C. or less, the composition of SiGe which forms the photosensitive layer 17 a will not change.
Furthermore, to reduce the reflection of the light at the surface of the [0086] photosensitive layer 17 a, the thickness of the photosensitive layer 17 a and the silicon substrate 4 may be adjusted to be an integer multiple of λ/4n (λ: the wavelength of the light, n: the index of the refraction), so that the phase difference between the light impinging upon the photosensitive layer 17 a formed of SiGe and the light through the photosensitive layer 17 a reflecting from the bottom surface of the silicon substrate 4 will be about λ/2. Thus, the photosensitivity of the photodiode 27 can be further improved.

(Example 3)

FIG. 6 is a cross-sectional view of a circuit-incorporating [0087] photosensitive device 320 according to Example 3 of the present invention. In the circuit-incorporating photosensitive device 320, a reflection film 23 which is formed of a high melting point metal film is provided on the silicon substrate 1. The structure is similar to that of the circuit-incorporating photosensitive device 310 except for the reflection film 23.
The light transmitted through the [0088] photosensitive layer 17 a is reflected from the reflection film 23 so as to return to the photosensitive layer 17 a. Thus, the photosensitive layer 17 a can obtain a level of photosensitivity which is equal to that of a twice-as-thick photosensitive layer. Furthermore, a high melting point metal film which forms the reflection film 23 can be sputtered to the surface of either one of the silicon substrate 1 or the N-type silicon substrate 4 which are adhered together when forming the SOI wafer 29.
When the proportion of Ge is increased so as to increase the light absorption coefficient of the [0089] photosensitive layer 17 a formed of SiGe, the distortion of the Si layer will be greater and the crystallinity will be lowered. Therefore, the photosensitive layer 17 a may not be thick enough to sufficiently absorb light. However, with the circuit-incorporating photosensitive device 320, the light can be absorbed sufficiently with a thin photosensitive layer 17 a by providing the reflection film 23.
In the above-described Examples 1-3, the description is made with respect to the [0090] photodiode 27 having a single photosensitive layer 17 a which is not segmented. However, as in the circuit-incorporating photosensitive device 330 shown in FIG. 7, the N-type silicon substrate 4 and the photosensitive layer 17 a may be separated into plural photosensitive regions by the trench-type separation layers 5. In this case, a segmented photodiode, preferably used as an optical pickup or a camera device, is provided. By separating the photosensitive regions of a photodiode 27 a into a plurality of regions by the trench-type separation layers 5, the photodiode 27 a becomes free from crosstalk and thus, high resolution can be achieved. Since the photosensitive layer 17 a formed of SiGe may be formed by a selective epitaxial method, the photosensitive layer 17 a may be separated into plural regions when the photosensitive layer 17 a is formed thorough such selective epitaxial growth.
As described above, in the circuit-incorporating photosensitive device according to the present invention, a photodiode having a photosensitive layer formed of SiGe and a signal processing circuit are provided on an SOI wafer which has lower power consumption. Thus, the photodiode can achieve higher photosensitivity, and the signal processing circuit can have lower gain. Accordingly, the response speed in the signal processing circuit, the S/N ratio, etc., can be prevented from decreasing. Furthermore, by providing a high-speed transistor having a portion formed of SiGe on the same SOI wafer as a signal processing circuit, the speed of the signal processing is increased, and a photosensitive device with fast operation, high sensitivity and low power consumption can be provided. [0091]
Various other modifications will be apparent to and can be readily made by those skilled in the art without departing from the scope and spirit of this invention. [0092]
Accordingly, it is not intended that the scope of the claims appended hereto be limited to the description as set forth herein, but rather that the claims be broadly construed. [0093]

Claims

What is claimed is:

1. A circuit-incorporating photosensitive device comprising:

an SOI wafer comprising a first silicon substrate,

a second silicon substrate, and an oxide film;

a photodiode formed in a first region of the SOI wafer; and

a signal processing circuit formed in a second region of the SOI wafer,

wherein the photodiode comprises a photosensitive layer comprising an SiGe layer.

2. A circuit-incorporating photosensitive device according to claim 1, wherein the photosensitive layer is formed after the signal processing circuit is formed.

3. A circuit-incorporating photosensitive device according to claim 1, wherein the photosensitive layer is provided in a recess formed in the SOI wafer.

4. A circuit-incorporating photosensitive device according to claim 1, wherein the signal processing circuit comprises a high-speed transistor, and at least a portion of the high-speed transistor is formed of an SiGe layer.

5. A circuit-incorporating photosensitive device according to claim 4, wherein the SiGe layer of the photosensitive layer and the SiGe layer of the high-speed transistor are simultaneously formed.

6. A circuit-incorporating photosensitive device according to claim 1, wherein the photodiode has a reflection film provided on a bottom surface thereof.

7. A circuit-incorporating photosensitive device according to claim 6, wherein the reflection film includes a high melting point metal film.

8. A circuit-incorporating photosensitive device according to claim 1, wherein an antireflection film is provided on the photosensitive layer.

9. A circuit-incorporating photosensitive device according to claim 8, wherein the antireflection film comprises an SiN film.

10. A circuit-incorporating photosensitive device according to claim 9, wherein a thermal oxide film is formed between the photosensitive layer and the SiN film.

11. A circuit-incorporating photosensitive device according to claim 8, wherein the antireflection film is integrally formed of the photosensitive layer.

12. A circuit-incorporating photosensitive device according to claim 8, wherein the antireflection film includes an amorphous carbon film.

13. A circuit-incorporating photosensitive device according to claim 1, wherein a phase difference between light impinging upon the photosensitive layer and light reflecting at the bottom surface of the second silicon substrate is ½ of the wavelength of the light impinging upon the photosensitive layer.

14. A circuit-incorporating photosensitive device according to claim 1, wherein the photosensitive layer is separated into plural photosensitive regions by a trench-type separation layer.

15. A circuit-incorporating photosensitive device according to claim 1, wherein the photosensitive layer is separated into plural photosensitive regions by forming the photosensitive layer with a selective epitaxial growth method.