US20010054384A1 - Vaporiser for generating feed gas for an arc chamber - Google Patents
Vaporiser for generating feed gas for an arc chamber Download PDFInfo
- Publication number
- US20010054384A1 US20010054384A1 US09/825,365 US82536501A US2001054384A1 US 20010054384 A1 US20010054384 A1 US 20010054384A1 US 82536501 A US82536501 A US 82536501A US 2001054384 A1 US2001054384 A1 US 2001054384A1
- Authority
- US
- United States
- Prior art keywords
- crucible
- feed gas
- vaporiser
- arc chamber
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000001816 cooling Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000012809 cooling fluid Substances 0.000 claims abstract description 6
- 239000007943 implant Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 description 11
- 239000002826 coolant Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
Definitions
- the present invention relates to a vaporiser for generating feed gas for an arc chamber.
- the invention is particularly applicable when the arc chamber acts as the ion source for a semiconductor implant apparatus.
- Such a vaporiser typically comprises an elongate crucible arranged to contain a source of material, and a heater to heat the source to generate the feed gas.
- a source of material typically comprises a fused silica, a fused silica, and a heater to heat the source to generate the feed gas.
- two such vaporisers are provided in a semiconductor implant apparatus, each containing a different source of material for generating different species of feed gas.
- the arc chamber is then purged before the heater of the second vaporiser is activated in order to commence the supply of the second feed gas.
- the vaporiser is allowed to cool by radiation, but in one prior art attempt to improve the cooling, a jet of N 2 is directed at the end of the crucible on the atmospheric side. This improves the cooling to some extent, but does little to cool the source of material at the far end of the crucible.
- a further problem is that although vaporisers used in the prior art operate well at or close to their maximum temperatures, it is sometimes necessary to operate vaporisers at a lower temperature. Control of conventional vaporisers at this lower temperature has proved to be difficult as the vaporiser is particularly sensitive to sudden power surges to the heater.
- a vaporiser for generating feed gas for an arc chamber comprising an elongate crucible arranged to contain a source of material, a heater to heat the source to generate the feed gas, and a cooling duct arranged along a substantial portion of the length of the crucible to receive cooling fluid and cool the source of material.
- the present invention By circulating cooling fluid around the duct extending along the crucible, more effective and uniform cooling is provided.
- the present invention also allows the vaporiser to be operated at a lower temperature by running the heater at or close to full power while circulating a controlled amount of cooling fluid through the cooling duct.
- the vaporiser according to the present invention can be used with species which sublimate at lower temperatures than those commonly used in implant systems.
- the cooling duct preferably extends along substantially the entire length of the crucible.
- the duct is also preferably wound around the crucible and is preferably wound in a helical configuration, as this provides a simple way of achieving the optimum cooling.
- FIG. 1 is a perspective view of the vaporiser
- FIG. 2 is a cross-section through line II-II in FIG. 3;
- FIG. 3 is a plan view of the lower side of the vaporiser shown in FIG. 1;
- FIG. 4 shows the detailed ringed as IV in FIG. 3.
- the vaporiser comprises a crucible 1 which generally has a hollow cylindrical shape.
- the inside of the crucible 1 defines a cavity 2 which is arranged to receive a solid off the appropriate species for the gas to be generated.
- One end 3 of the cavity 2 is open and is connected, in use, to an ion source located within the ion implant system.
- a suitable seal (not shown) is provided at the second end 4 of the crucible, so that, in use, the crucible is in a vacuum chamber, while the remainder of the assembly is open to the atmosphere.
- a cooling duct 5 helically wound along the entire length of the crucible 1 .
- the helix is shown in a double wound configuration in the figures.
- One of these windings represents a duct which transports incoming coolant along the crucible from right to left as shown in the figures. While the other duct returns the coolant in the opposite direction.
- a bend 6 in the duct 5 (as best shown in FIG. 4) represents the transition from the outward duct to the return duct.
- a heating element 7 in the form of a thin electrically conductive wire in an insulating housing is helically wound along a groove 8 in the outer surface of the crucible 1 .
- the heating element 7 has the same pitch as the cooling duct 5 but is offset along the axis of the crucible 1 .
- a support tube 9 Leading away from the second end 4 of the crucible 1 is a support tube 9 which terminates at a base plate 10 by which the vaporiser is mounted. Coolant feed and return pipes 11 extend through the support tube 9 and lead respectively to and from the helically wound cooling duct 5 . Behind the support plate 10 , the coolant return tube 11 is provided with a loop 12 to accommodate any thermal expansion. A lead 30 extends from the heating element 7 through the support tube 9 to an electrical connector 14 .
- thermocouple mounted on the atmospheric side of the vaporiser in a bore 15 at the second end 4 of the crucible 1 as best shown in FIG. 2.
- the control system increases the power to the heating element 7 raising the vaporiser temperature so that the feed undergoes sublimation and the temperature is then maintained at a level sufficient to give the required vapour flow to the ion source arc chamber.
- the heating element 7 is energised with a heating current intermittently from a fixed electrical supply, and the mean power delivered to the element 7 is controlled by increasing or reducing the proportion of time during which the element 7 is energised.
- the vaporiser If the vaporiser is required to operate at a lower temperature, a small quantity of coolant gas can be allowed to flow through the cooling duct 5 while current is supplied to the heating element 7 .
- This forced cooling of the crucible 1 during application of the heating current to the heating element 7 has the effect of increasing the thermal loading of the crucible, so that a relatively lower temperature can then be maintained with the heating element 7 energised for a relatively higher proportion of the time. This allows the vaporiser to operate stabily at a lower temperature as the temperature can now be more smoothly regulated.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
- The present invention relates to a vaporiser for generating feed gas for an arc chamber. The invention is particularly applicable when the arc chamber acts as the ion source for a semiconductor implant apparatus.
- Such a vaporiser typically comprises an elongate crucible arranged to contain a source of material, and a heater to heat the source to generate the feed gas. Typically, two such vaporisers are provided in a semiconductor implant apparatus, each containing a different source of material for generating different species of feed gas. In order to switch between feed gases, it is necessary to disconnect the power supply to the heater and allow the source to cool thereby ceasing the production of feed gas. The arc chamber is then purged before the heater of the second vaporiser is activated in order to commence the supply of the second feed gas. Usually, the vaporiser is allowed to cool by radiation, but in one prior art attempt to improve the cooling, a jet of N2 is directed at the end of the crucible on the atmospheric side. This improves the cooling to some extent, but does little to cool the source of material at the far end of the crucible.
- A further problem is that although vaporisers used in the prior art operate well at or close to their maximum temperatures, it is sometimes necessary to operate vaporisers at a lower temperature. Control of conventional vaporisers at this lower temperature has proved to be difficult as the vaporiser is particularly sensitive to sudden power surges to the heater.
- According to the present invention there is provided a vaporiser for generating feed gas for an arc chamber, the vaporiser comprising an elongate crucible arranged to contain a source of material, a heater to heat the source to generate the feed gas, and a cooling duct arranged along a substantial portion of the length of the crucible to receive cooling fluid and cool the source of material.
- By circulating cooling fluid around the duct extending along the crucible, more effective and uniform cooling is provided. The present invention also allows the vaporiser to be operated at a lower temperature by running the heater at or close to full power while circulating a controlled amount of cooling fluid through the cooling duct. Thus, the vaporiser according to the present invention can be used with species which sublimate at lower temperatures than those commonly used in implant systems.
- In order to optimise the uniformity of the cooling, the cooling duct preferably extends along substantially the entire length of the crucible. The duct is also preferably wound around the crucible and is preferably wound in a helical configuration, as this provides a simple way of achieving the optimum cooling.
- An example of a vaporiser in accordance with the present invention will now be described with reference to the accompanying drawings, in which:
- FIG. 1 is a perspective view of the vaporiser;
- FIG. 2 is a cross-section through line II-II in FIG. 3;
- FIG. 3 is a plan view of the lower side of the vaporiser shown in FIG. 1; and
- FIG. 4 shows the detailed ringed as IV in FIG. 3.
- The vaporiser comprises a crucible1 which generally has a hollow cylindrical shape. The inside of the crucible 1 defines a cavity 2 which is arranged to receive a solid off the appropriate species for the gas to be generated. One
end 3 of the cavity 2 is open and is connected, in use, to an ion source located within the ion implant system. A suitable seal (not shown) is provided at the second end 4 of the crucible, so that, in use, the crucible is in a vacuum chamber, while the remainder of the assembly is open to the atmosphere. - Around the outer surface of the crucible is a cooling
duct 5 helically wound along the entire length of the crucible 1. The helix is shown in a double wound configuration in the figures. One of these windings represents a duct which transports incoming coolant along the crucible from right to left as shown in the figures. While the other duct returns the coolant in the opposite direction. A bend 6 in the duct 5 (as best shown in FIG. 4) represents the transition from the outward duct to the return duct. - A
heating element 7 in the form of a thin electrically conductive wire in an insulating housing is helically wound along agroove 8 in the outer surface of the crucible 1. Theheating element 7 has the same pitch as thecooling duct 5 but is offset along the axis of the crucible 1. - Leading away from the second end4 of the crucible 1 is a support tube 9 which terminates at a base plate 10 by which the vaporiser is mounted. Coolant feed and return pipes 11 extend through the support tube 9 and lead respectively to and from the helically wound
cooling duct 5. Behind the support plate 10, the coolant return tube 11 is provided with aloop 12 to accommodate any thermal expansion. A lead 30 extends from theheating element 7 through the support tube 9 to anelectrical connector 14. - The temperature within the crucible is monitored by a thermocouple mounted on the atmospheric side of the vaporiser in a bore15 at the second end 4 of the crucible 1 as best shown in FIG. 2.
- In use, when the assembly is fitted to an ion source, current supplied to the
heater element 7 is arranged to maintain the solid source in the chamber 2 at a temperature which is just below that required for sublimation of the solid. When an ion beam of this species is required, the control system increases the power to theheating element 7 raising the vaporiser temperature so that the feed undergoes sublimation and the temperature is then maintained at a level sufficient to give the required vapour flow to the ion source arc chamber. Normally theheating element 7 is energised with a heating current intermittently from a fixed electrical supply, and the mean power delivered to theelement 7 is controlled by increasing or reducing the proportion of time during which theelement 7 is energised. - When a beam of a different species is required, it is desirable to remove the current species from the arc chamber as quickly as possible. At this time, the power to the
heater element 7 is disconnected and a coolant gas such as nitrogen is circulated around the helically woundcooling duct 5 thereby quickly halting sublimation of the solid. - If the vaporiser is required to operate at a lower temperature, a small quantity of coolant gas can be allowed to flow through the
cooling duct 5 while current is supplied to theheating element 7. This forced cooling of the crucible 1 during application of the heating current to theheating element 7 has the effect of increasing the thermal loading of the crucible, so that a relatively lower temperature can then be maintained with theheating element 7 energised for a relatively higher proportion of the time. This allows the vaporiser to operate stabily at a lower temperature as the temperature can now be more smoothly regulated.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/397,234 US7004234B2 (en) | 2000-04-04 | 2003-03-27 | Vaporizer for generating feed gas for an arc chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0008286.7 | 2000-04-04 | ||
GBGB0008286.7A GB0008286D0 (en) | 2000-04-04 | 2000-04-04 | A vaporiser for generating feed gas for an arc chamber |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/397,234 Division US7004234B2 (en) | 2000-04-04 | 2003-03-27 | Vaporizer for generating feed gas for an arc chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
US20010054384A1 true US20010054384A1 (en) | 2001-12-27 |
Family
ID=9889191
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/825,365 Abandoned US20010054384A1 (en) | 2000-04-04 | 2001-04-04 | Vaporiser for generating feed gas for an arc chamber |
US10/397,234 Expired - Lifetime US7004234B2 (en) | 2000-04-04 | 2003-03-27 | Vaporizer for generating feed gas for an arc chamber |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/397,234 Expired - Lifetime US7004234B2 (en) | 2000-04-04 | 2003-03-27 | Vaporizer for generating feed gas for an arc chamber |
Country Status (6)
Country | Link |
---|---|
US (2) | US20010054384A1 (en) |
JP (1) | JP2002100298A (en) |
KR (2) | KR100855422B1 (en) |
DE (1) | DE10115937A1 (en) |
GB (2) | GB0008286D0 (en) |
SG (1) | SG100652A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878945B1 (en) | 2003-09-19 | 2005-04-12 | Oki Electric Industry Co., Ltd. | Vaporizer for ion source |
US20130160712A1 (en) * | 2010-09-01 | 2013-06-27 | Sharp Kabushiki Kaisha | Evaporation cell and vacuum deposition system the same |
CN106435526A (en) * | 2016-10-10 | 2017-02-22 | 电子科技大学 | Gas reaction cavity for preparing YBCO strip by MOCVD |
US20220333231A1 (en) * | 2021-04-15 | 2022-10-20 | Applied Materials, Inc. | Evaporation source cooling mechanism |
US11739414B2 (en) * | 2007-10-12 | 2023-08-29 | Jln Solar, Inc. | Thermal evaporation sources for wide-area deposition |
Families Citing this family (6)
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FI118803B (en) * | 2005-04-22 | 2008-03-31 | Beneq Oy | Source, Arrangement for Installing the Source, and Method for Installing and Removing the Source |
US20070074812A1 (en) * | 2005-09-30 | 2007-04-05 | Andrej Mitrovic | Temperature control of plasma density probe |
US20070075036A1 (en) * | 2005-09-30 | 2007-04-05 | Paul Moroz | Method and apparatus for measuring plasma density in processing reactors using a short dielectric cap |
DE202016100917U1 (en) * | 2016-02-22 | 2016-03-09 | Türk & Hillinger GmbH | Air and / or aerosol heater |
US20180010239A1 (en) * | 2016-07-06 | 2018-01-11 | United Technologies Corporation | Vapor deposition apparatus and method |
CN111616420A (en) * | 2020-07-17 | 2020-09-04 | 惠州市沛格斯科技有限公司 | Heating module and smoke generating equipment |
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US3649862A (en) * | 1969-05-01 | 1972-03-14 | Colutron Corp | Separated ion beam source with adjustable separation |
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US5604350A (en) * | 1995-11-16 | 1997-02-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Fitting for an ion source assembly |
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DE29615190U1 (en) * | 1996-03-11 | 1996-11-28 | Balzers Verschleissschutz GmbH, 55411 Bingen | Plant for coating workpieces |
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JP3789655B2 (en) * | 1998-09-03 | 2006-06-28 | 独立行政法人 日本原子力研究開発機構 | Cesium introduction device |
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-
2000
- 2000-04-04 GB GBGB0008286.7A patent/GB0008286D0/en not_active Ceased
-
2001
- 2001-03-22 GB GB0107216A patent/GB2361051B/en not_active Expired - Fee Related
- 2001-03-23 SG SG200101836A patent/SG100652A1/en unknown
- 2001-03-30 DE DE10115937A patent/DE10115937A1/en not_active Withdrawn
- 2001-04-04 US US09/825,365 patent/US20010054384A1/en not_active Abandoned
- 2001-04-04 JP JP2001106063A patent/JP2002100298A/en active Pending
- 2001-04-04 KR KR1020010017973A patent/KR100855422B1/en active IP Right Grant
-
2003
- 2003-03-27 US US10/397,234 patent/US7004234B2/en not_active Expired - Lifetime
-
2008
- 2008-01-31 KR KR1020080010085A patent/KR100857973B1/en active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878945B1 (en) | 2003-09-19 | 2005-04-12 | Oki Electric Industry Co., Ltd. | Vaporizer for ion source |
US11739414B2 (en) * | 2007-10-12 | 2023-08-29 | Jln Solar, Inc. | Thermal evaporation sources for wide-area deposition |
US20130160712A1 (en) * | 2010-09-01 | 2013-06-27 | Sharp Kabushiki Kaisha | Evaporation cell and vacuum deposition system the same |
CN106435526A (en) * | 2016-10-10 | 2017-02-22 | 电子科技大学 | Gas reaction cavity for preparing YBCO strip by MOCVD |
US20220333231A1 (en) * | 2021-04-15 | 2022-10-20 | Applied Materials, Inc. | Evaporation source cooling mechanism |
Also Published As
Publication number | Publication date |
---|---|
GB0107216D0 (en) | 2001-05-16 |
US7004234B2 (en) | 2006-02-28 |
GB0008286D0 (en) | 2000-05-24 |
JP2002100298A (en) | 2002-04-05 |
GB2361051A (en) | 2001-10-10 |
KR100857973B1 (en) | 2008-09-10 |
GB2361051B (en) | 2004-01-28 |
KR100855422B1 (en) | 2008-08-29 |
SG100652A1 (en) | 2003-12-26 |
KR20080019036A (en) | 2008-02-29 |
KR20010095321A (en) | 2001-11-03 |
DE10115937A1 (en) | 2001-10-18 |
US20030183172A1 (en) | 2003-10-02 |
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