US20010041447A1 - Method and system for copper interconnect formation - Google Patents
Method and system for copper interconnect formation Download PDFInfo
- Publication number
- US20010041447A1 US20010041447A1 US08/954,175 US95417597A US2001041447A1 US 20010041447 A1 US20010041447 A1 US 20010041447A1 US 95417597 A US95417597 A US 95417597A US 2001041447 A1 US2001041447 A1 US 2001041447A1
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- United States
- Prior art keywords
- barrier metal
- metal layer
- substrate
- copper
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 title description 44
- 239000010949 copper Substances 0.000 title description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title description 43
- 230000015572 biosynthetic process Effects 0.000 title description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000011109 contamination Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- -1 tungsten nitride Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Definitions
- the present invention relates to semiconductor processing and more particularly to a method and system for reducing the contamination due to copper interconnect formation.
- Copper interconnects can be used formed during semiconductor processing.
- a trench is first provided in the silicon substrate.
- a barrier metal is typically deposited to prevent the copper to be used in an interconnect or via from migrating.
- copper plating is performed, filling the trench and providing the interconnect.
- the barrier metals that are used also work as a seed layer for copper.
- Such barrier metals are used to allow the growth of the copper on the barrier metal in the trench or the via. If barrier metals which cannot act as a seed layer are used, the copper will not properly grow in the trench or via unless a separate seed layer is provided.
- the barrier metal is deposited at the edge and rear of the silicon substrate as well as in the trenches or vias. Because the barrier metal acts as a seed layer for copper, a copper film also develops at the edge and rear of the substrate during copper plating. Because this copper film is thin, it does not adhere well to the silicon substrate and peels during processing. Pieces of the peeled copper film may then contaminate the circuitry formed towards the center of the silicon substrate.
- the present invention provides a method and system for reducing contamination in a semiconductor device formed on a substrate.
- a first portion of the barrier metal layer is thinner than a second portion of the barrier metal layer.
- the method and system further comprise removing the first portion of the barrier metal layer.
- the present invention reduce copper contamination, thereby increasing overall system performance.
- FIG. 1 is a block diagram of a conventional system for providing copper interconnects.
- FIG. 2A is a block diagram of a system for providing copper interconnects in accordance with the method and system just after deposition of a barrier metal layer.
- FIG. 2B is a block diagram of a system for providing copper interconnects in accordance with the method and system during etching.
- FIG. 2C is a block diagram of a system for providing copper interconnects in accordance with the method and system after etching.
- the present invention relates to an improvement in semiconductor processing.
- the following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements.
- Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments.
- the present invention is not intended to be limited to the embodiment shown but is to be accorded the widest scope consistent with the principles and features described herein.
- FIG. 1 is a block diagram of a conventional substrate during formation of copper interconnects and vias.
- the substrate 12 is typically silicon.
- the substrate is placed on an apparatus including a base 18 .
- a layer of barrier metal 14 is deposited onto the substrate 14 .
- the barrier metal layer 14 is used to block the migration of copper outside of the interconnects and vias.
- the barrier metal layer 14 is formed through chemical vapor deposition (“CVD”).
- CVD chemical vapor deposition
- a seed layer 16 is also grown on the barrier metal layer 14 .
- a copper layer is deposited.
- the copper layer is formed by electroplating copper.
- the barrier metal layer 14 covers not only the open portion, but also covers the edge and a portion of the back of the substrate 12 . Thus, a thin layer of the barrier metal chosen for the barrier metal layer 14 is present at the edge and rear of the substrate 12 . Typically, the barrier metal layer 14 is approximately 300 Angstroms near the center of the substrate 12 and approximately 30 Angstroms at the edge and rear of the substrate 12 .
- the barrier metal layer 14 can typically act as a seed layer for copper.
- tungsten-nitride (WN x where x is an integer) or titanium-nitride (TiN) is typically used to form the barrier metal layer 14 .
- TiN titanium-nitride
- This feature of the barrier metal layer 14 is important in aiding the growth of the copper to form the interconnects and vias.
- the barrier metal layer 14 is a seed layer, the copper plating causes a thin layer of copper, not shown, to grow on the thin portion of the barrier metal layer 14 , at the edge and back of the substrate 12 .
- the thin copper layer does not adhere well to the substrate 12 . As a result, the thin copper layer peels off of the edge and back of the substrate 12 , contaminating the circuits formed on the substrate 12 .
- the present invention provides for a method and system for removing a portion of the barrier metal layer.
- the present invention will be described in terms of a particular process for etching a portion of the barrier metal layer. However, one of ordinary skill in the art will readily recognize that this method and system will operate effectively for other types of methods for removing the portion of the barrier metal layer.
- FIG. 2A depicting a block diagram of one embodiment of such a system 100 just after deposition of a barrier metal.
- the system 100 of the present invention includes a base 118 .
- the substrate 112 is placed on the base 118 .
- Trenches or vias are then formed in the substrate 112 .
- a barrier metal layer 114 is deposited to prevent diffusion of any copper deposited later.
- the barrier metal layer 114 is deposited using CVD.
- the barrier metal layer 114 is much thicker near the center of the substrate 112 than near the edge.
- the barrier metal layer 114 is approximately three hundred Angstroms near the center at approximately thirty Angstroms near the edge of the substrate 114 .
- the barrier metal layer 114 is on the order of ten times thicker at the center of the substrate 112 than at the edge and back of the substrate 112 .
- a seed layer 116 is deposited. The seed layer 116 improves adhesion of the copper layer, not shown, which is to be deposited later.
- FIG. 2B depicts the system 100 after deposition of the seed layer 116 .
- the barrier metal layer 114 is etched after deposition of the seed layer 116 . This etch removes the thin portions of the barrier metal layer 114 at the edge and back of the substrate.
- the etching gas is preferably NF 3 .
- the etching gas used may be chlorine.
- Etching the barrier metal layer 114 removes the portion of the barrier metal layer 114 at the edge and back of the substrate 112 . Because of the presence of the seed layer 116 , the metal in the central portion of the substrate 112 is not significantly etched. This removes the thinner portion of the barrier metal layer 114 . Typically, the thinner portion of the barrier metal layer 114 is at the edge and back of the substrate 112 . Thus, the etch removes the portion of the barrier metal layer 114 to which copper would otherwise adhere. Because of the seed layer 116 , the thinner portions of the barrier metal layer 114 have been removed while the thicker portion of the barrier metal layer 114 lying beneath the seed layer 116 remains substantially unchanged. Thus, in accordance with the method and system, the thin portion of the barrier metal layer 114 will be removed.
- FIG. 2C depicting one embodiment of the system 100 after etching of the barrier metal layer 114 .
- the thin portions of the barrier metal layer 114 have been removed, leaving only the thicker central portion lying beneath the seed layer 116 . Because the portion of the barrier metal layer at the edge and back of the substrate 114 was etched while the portion of the barrier metal layer at the center of the substrate 114 was protected by the seed layer 116 , the portion of the barrier metal layer 114 remaining can still prevent diffusion of the copper, not shown, that will be plated later.
- the portion of the barrier metal layer 114 at the edge and back of the substrate 112 has been removed, there is no seed layer for copper to adhere to at these portions of the substrate. As a result, deposition of copper at the edges and back of the substrate is greatly reduced. The contamination due to copper peeling off of the substrate 112 is thereby reduced.
- a method and system has been disclosed for providing copper interconnects with reduced contamination due to copper deposited at the edge or rear of the substrate.
Abstract
Description
- The present invention relates to semiconductor processing and more particularly to a method and system for reducing the contamination due to copper interconnect formation.
- Copper interconnects can be used formed during semiconductor processing. In forming copper interconnects, for a trench is first provided in the silicon substrate. Next, a barrier metal is typically deposited to prevent the copper to be used in an interconnect or via from migrating. Then, copper plating is performed, filling the trench and providing the interconnect.
- Typically, the barrier metals that are used also work as a seed layer for copper. Such barrier metals are used to allow the growth of the copper on the barrier metal in the trench or the via. If barrier metals which cannot act as a seed layer are used, the copper will not properly grow in the trench or via unless a separate seed layer is provided.
- Although the above process forms copper interconnects, the barrier metal is deposited at the edge and rear of the silicon substrate as well as in the trenches or vias. Because the barrier metal acts as a seed layer for copper, a copper film also develops at the edge and rear of the substrate during copper plating. Because this copper film is thin, it does not adhere well to the silicon substrate and peels during processing. Pieces of the peeled copper film may then contaminate the circuitry formed towards the center of the silicon substrate.
- Accordingly, what is needed is a system and method for providing copper interconnects and vias without introducing copper contamination due to films formed at the edge of the substrate. The present invention addresses such a need.
- The present invention provides a method and system for reducing contamination in a semiconductor device formed on a substrate. A first portion of the barrier metal layer is thinner than a second portion of the barrier metal layer. The method and system further comprise removing the first portion of the barrier metal layer.
- According to the system and method disclosed herein, the present invention reduce copper contamination, thereby increasing overall system performance.
- FIG. 1 is a block diagram of a conventional system for providing copper interconnects.
- FIG. 2A is a block diagram of a system for providing copper interconnects in accordance with the method and system just after deposition of a barrier metal layer.
- FIG. 2B is a block diagram of a system for providing copper interconnects in accordance with the method and system during etching.
- FIG. 2C is a block diagram of a system for providing copper interconnects in accordance with the method and system after etching.
- The present invention relates to an improvement in semiconductor processing. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments. Thus, the present invention is not intended to be limited to the embodiment shown but is to be accorded the widest scope consistent with the principles and features described herein.
- FIG. 1 is a block diagram of a conventional substrate during formation of copper interconnects and vias. The
substrate 12 is typically silicon. The substrate is placed on an apparatus including abase 18. After formation of trenches or via holes, not shown, a layer ofbarrier metal 14 is deposited onto thesubstrate 14. Thebarrier metal layer 14 is used to block the migration of copper outside of the interconnects and vias. Typically, thebarrier metal layer 14 is formed through chemical vapor deposition (“CVD”). In some instances aseed layer 16 is also grown on thebarrier metal layer 14. After theseed layer 16 is provided, a copper layer, not shown, is deposited. Typically, the copper layer is formed by electroplating copper. - Although the system shown in FIG. 1 allows formation of copper interconnects and vias, those with ordinary skill in the art will realize that copper deposited during formation of the interconnects and vias will contaminate the structures formed on the
substrate 12. Thebarrier metal layer 14 covers not only the open portion, but also covers the edge and a portion of the back of thesubstrate 12. Thus, a thin layer of the barrier metal chosen for thebarrier metal layer 14 is present at the edge and rear of thesubstrate 12. Typically, thebarrier metal layer 14 is approximately 300 Angstroms near the center of thesubstrate 12 and approximately 30 Angstroms at the edge and rear of thesubstrate 12. - The
barrier metal layer 14 can typically act as a seed layer for copper. For example, tungsten-nitride (WNx where x is an integer) or titanium-nitride (TiN) is typically used to form thebarrier metal layer 14. This feature of thebarrier metal layer 14 is important in aiding the growth of the copper to form the interconnects and vias. Because thebarrier metal layer 14 is a seed layer, the copper plating causes a thin layer of copper, not shown, to grow on the thin portion of thebarrier metal layer 14, at the edge and back of thesubstrate 12. The thin copper layer does not adhere well to thesubstrate 12. As a result, the thin copper layer peels off of the edge and back of thesubstrate 12, contaminating the circuits formed on thesubstrate 12. - The present invention provides for a method and system for removing a portion of the barrier metal layer. The present invention will be described in terms of a particular process for etching a portion of the barrier metal layer. However, one of ordinary skill in the art will readily recognize that this method and system will operate effectively for other types of methods for removing the portion of the barrier metal layer.
- To more particularly illustrate the method and system in accordance with the present invention, refer now to FIG. 2A depicting a block diagram of one embodiment of such a
system 100 just after deposition of a barrier metal. Thesystem 100 of the present invention includes abase 118. Thesubstrate 112 is placed on thebase 118. Trenches or vias are then formed in thesubstrate 112. Next, abarrier metal layer 114 is deposited to prevent diffusion of any copper deposited later. In a preferred embodiment, thebarrier metal layer 114 is deposited using CVD. Typically, thebarrier metal layer 114 is much thicker near the center of thesubstrate 112 than near the edge. In a preferred embodiment, thebarrier metal layer 114 is approximately three hundred Angstroms near the center at approximately thirty Angstroms near the edge of thesubstrate 114. Generally, thebarrier metal layer 114 is on the order of ten times thicker at the center of thesubstrate 112 than at the edge and back of thesubstrate 112. After deposition of thebarrier metal layer 114, aseed layer 116 is deposited. Theseed layer 116 improves adhesion of the copper layer, not shown, which is to be deposited later. FIG. 2B depicts thesystem 100 after deposition of theseed layer 116. - In accordance with the method and system, the
barrier metal layer 114 is etched after deposition of theseed layer 116. This etch removes the thin portions of thebarrier metal layer 114 at the edge and back of the substrate. In a preferred embodiment, if thebarrier metal layer 114 is composed of tungsten nitride, the etching gas is preferably NF3. In another embodiment, if thebarrier metal layer 114 is composed of titanium nitride, the etching gas used may be chlorine. - Etching the
barrier metal layer 114 removes the portion of thebarrier metal layer 114 at the edge and back of thesubstrate 112. Because of the presence of theseed layer 116, the metal in the central portion of thesubstrate 112 is not significantly etched. This removes the thinner portion of thebarrier metal layer 114. Typically, the thinner portion of thebarrier metal layer 114 is at the edge and back of thesubstrate 112. Thus, the etch removes the portion of thebarrier metal layer 114 to which copper would otherwise adhere. Because of theseed layer 116, the thinner portions of thebarrier metal layer 114 have been removed while the thicker portion of thebarrier metal layer 114 lying beneath theseed layer 116 remains substantially unchanged. Thus, in accordance with the method and system, the thin portion of thebarrier metal layer 114 will be removed. - Refer now to FIG. 2C, depicting one embodiment of the
system 100 after etching of thebarrier metal layer 114. The thin portions of thebarrier metal layer 114 have been removed, leaving only the thicker central portion lying beneath theseed layer 116. Because the portion of the barrier metal layer at the edge and back of thesubstrate 114 was etched while the portion of the barrier metal layer at the center of thesubstrate 114 was protected by theseed layer 116, the portion of thebarrier metal layer 114 remaining can still prevent diffusion of the copper, not shown, that will be plated later. In addition, because the portion of thebarrier metal layer 114 at the edge and back of thesubstrate 112 has been removed, there is no seed layer for copper to adhere to at these portions of the substrate. As a result, deposition of copper at the edges and back of the substrate is greatly reduced. The contamination due to copper peeling off of thesubstrate 112 is thereby reduced. - A method and system has been disclosed for providing copper interconnects with reduced contamination due to copper deposited at the edge or rear of the substrate.
- Although the present invention has been described in accordance with the embodiments shown, one of ordinary skill in the art will readily recognize that there could be variations to the embodiments and those variations would be within the spirit and scope of the present invention. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims.
Claims (13)
Priority Applications (1)
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US08/954,175 US6399505B2 (en) | 1997-10-20 | 1997-10-20 | Method and system for copper interconnect formation |
Applications Claiming Priority (1)
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US08/954,175 US6399505B2 (en) | 1997-10-20 | 1997-10-20 | Method and system for copper interconnect formation |
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US20010041447A1 true US20010041447A1 (en) | 2001-11-15 |
US6399505B2 US6399505B2 (en) | 2002-06-04 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413436B1 (en) * | 1999-01-27 | 2002-07-02 | Semitool, Inc. | Selective treatment of the surface of a microelectronic workpiece |
US20060137994A1 (en) * | 2001-12-21 | 2006-06-29 | Basol Bulent M | Method of wafer processing with edge seed layer removal |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050217707A1 (en) * | 1998-03-13 | 2005-10-06 | Aegerter Brian K | Selective processing of microelectronic workpiece surfaces |
US6423642B1 (en) * | 1998-03-13 | 2002-07-23 | Semitool, Inc. | Reactor for processing a semiconductor wafer |
US20050061676A1 (en) * | 2001-03-12 | 2005-03-24 | Wilson Gregory J. | System for electrochemically processing a workpiece |
AU2002343330A1 (en) * | 2001-08-31 | 2003-03-10 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
Family Cites Families (6)
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JP2544396B2 (en) * | 1987-08-25 | 1996-10-16 | 株式会社日立製作所 | Method for manufacturing semiconductor integrated circuit device |
JPH04257227A (en) * | 1991-02-08 | 1992-09-11 | Sony Corp | Forming method for wiring |
US5407763A (en) * | 1992-05-28 | 1995-04-18 | Ceridian Corporation | Mask alignment mark system |
US5420071A (en) * | 1993-06-30 | 1995-05-30 | Burke; Edmund | Methods of forming local interconnections in semiconductor devices |
US5824599A (en) * | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US5854134A (en) * | 1997-05-05 | 1998-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Passivation layer for a metal film to prevent metal corrosion |
-
1997
- 1997-10-20 US US08/954,175 patent/US6399505B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413436B1 (en) * | 1999-01-27 | 2002-07-02 | Semitool, Inc. | Selective treatment of the surface of a microelectronic workpiece |
US20060137994A1 (en) * | 2001-12-21 | 2006-06-29 | Basol Bulent M | Method of wafer processing with edge seed layer removal |
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