US20010039070A1 - Solid-state imaging device and method of manufacturing the same - Google Patents
Solid-state imaging device and method of manufacturing the same Download PDFInfo
- Publication number
- US20010039070A1 US20010039070A1 US08/720,003 US72000396A US2001039070A1 US 20010039070 A1 US20010039070 A1 US 20010039070A1 US 72000396 A US72000396 A US 72000396A US 2001039070 A1 US2001039070 A1 US 2001039070A1
- Authority
- US
- United States
- Prior art keywords
- light shielding
- shielding films
- imaging device
- solid
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000003086 colorant Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 55
- 238000004043 dyeing Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Definitions
- This invention relates to a solid-state imaging (image pick-up) device and a method of manufacturing the same, and more particularly to a solid-state imaging device of the structure comprising color filter and a dyeing layer process in a color filter production process suitable when applied thereto.
- this solid-state imaging device comprises: groups of pixels 51 to 53 two-dimensionally arranged on a semiconductor substrate; vertical CCD shift registers 54 to 56 respectively disposed between these groups of pixels 51 to 53 , and adapted for transferring, in a vertical direction, signal charges produced in the pixels after undergone photoelectric conversion and stored therein; a horizontal CCD register 57 adjacently disposed at the lower end portion of the vertical CCD shift registers 54 to 56 , and adapted for reading out, in a horizontal direction, signal charges of the vertical CCD shift registers 54 to 56 , and an output circuit 58 disposed at the terminating end of the horizontal CCD shift register 57 .
- This solid-state imaging device is manufactured as follows. Initially, an insulating film 62 is formed on a semiconductor substrate 61 so as to include transfer electrodes 63 , 64 (see FIG. 4C) of the vertical CCD shift registers 54 to 56 to form light shielding films 65 on the insulating film 62 so that they are positioned immediately above the transfer electrodes 63 , 64 thereafter to form a protective film 66 so as to cover the light shielding films 65 . Then, a first color filter pattern 67 is formed on the protective film 66 . In this case, the first color filter pattern 67 is formed by coating resist for color filter onto the protective film 66 to carry out mask pattern transfer at a predetermined position with respect to the light shielding films 65 to implement the development processing thereto (FIG. 4A).
- the first color filter pattern 67 is positionally shifted to the left side with respect to the light shielding film 65 so that gap takes place between the first color filter pattern 67 and the light shielding film 65 of the right side.
- any shift takes place in the spectral characteristic by the dyeing (coloring) pattern of the first color filter pattern 67 .
- unsatisfactory color reproducibility takes place, thus degrading the color picture characteristic to much degree.
- This invention has been made in view of the problems with the prior art, and its object is to provide a solid-state imaging device of the structure comprising color filter, and a color filter formation process suitable when applied thereto, in which the pattern end portion position of the color filter pattern is determined by the self-alignment with respect to the light shielding film so that the process margin with respect to the color reproducibility is increased.
- a solid-state imaging device of this invention comprises: a semiconductor substrate, light shielding films formed so as to define light opening portions by a material of light shielding characteristic above the semiconductor substrate; and color filter layers formed above the light shielding films, and such that they are caused to correspond to the light opening portions and respective end portions thereof are positioned within regions corresponding to regions where the light shielding films are respectively formed.
- Transfer electrodes are preferably respectively provided below the light shielding films in a more practical sense.
- One of the color filter layers is preferably formed on a certain region where the light shielding film is formed in the state where a gap is held between the end portion thereof and that of the other color filter layer adjacent thereto.
- a method of manufacturing a solid-state imaging device of this invention comprises the steps of: forming a first insulating film on a semiconductor substrate; allowing a material of light shielding characteristic to selectively remain within regions where light shielding films are to be respectively formed on the first insulating film to form the light shielding films; forming a second insulating film in this state; selectively forming a color filter layer on the second insulating film so as to cover an opening portion surrounded by the light shielding films and to allow respective end portions thereof to be positioned on the regions where the light shielding films are respectively formed.
- Formation of the color filter layer is repeatedly carried out with respect to plural colors.
- FIGS. 1 A- 1 G are device cross sectional views every process steps showing a manufacturing process of a solid-state imaging device according to an embodiment of this invention
- FIG. 3 is a plan view showing outline of the configuration of a conventional solid-state imaging device
- FIGS. 4 A- 4 C are device cross sectional views every process steps showing a manufacturing process thereof.
- FIGS. 5A and 5B are cross sectional views for explaining the problems of the manufacturing process for the conventional solid-state imaging device.
- FIGS. 1 A- 1 G are device cross sectional views every process steps showing a manufacturing process of a solid-state imaging device according to an embodiment of this invention.
- an insulating film 2 is first formed so as to include transfer electrodes of vertical CCD shift register (not shown) on a semiconductor substrate 1 comprised of, e.g., silicon to form, on the insulating film 2 , light shielding films 3 by material having high reflection factor (e.g., Al) so that they are positioned immediately (directly) above the transfer electrodes thereafter to stack a protective film 4 on the entire surface thereof Thereafter, a resist 5 serving as color filter material of the positive type is coated onto the entire surface of the protective film 4 .
- transfer electrodes of vertical CCD shift register not shown
- a semiconductor substrate 1 comprised of, e.g., silicon to form
- light shielding films 3 by material having high reflection factor (e.g., Al) so that they are positioned immediately (directly) above the transfer electrodes thereafter to stack a protective film 4 on the entire surface
- the resist 5 is exposed to light by the entire surface exposure.
- metal like Al is ordinarily used as the light shielding film 3
- this light shielding film has metal gloss.
- silicon is ordinarily used for the semiconductor substrate 1 as described above. An incident light is admitted (entered) into the substrate 1 , and the reflected component thereof is smaller than the reflected component from the light shielding film 3 .
- each portion positioned on the light shielding film 3 in the resist 5 is removed to more degree than other portions, or only the portion positioned on the light shielding film 3 is slightly removed so that it is caused to be of the thin film structure.
- Arrows in the figure indicate action of light such as irradiated light and reflected light, etc.
- the resist 5 portion corresponding to the portion except for the shield pattern of a photomask 6 is exposed to light.
- FIG. 1D By carrying out development in such a state, as shown in FIG. 1D, only the portion overlapping with the pattern of the photomask 6 at the portion except for the light shielding films 3 is left as a filter pattern 7 .
- this film pattern 7 is dyed (colored) by a predetermined dyeing material to complete the color filter of one color.
- a resist 8 serving as filter material of the other color is coated to allow the entire surface thereof to be exposed to light.
- a photomask 9 is provided as shown in FIG. 1F to allow the portion except for the region where the filter pattern is to be formed to be exposed to light.
- a filter pattern 11 of the remaining color is formed as shown in FIG. 1G.
- filter patterns 7 , 10 , 11 of three colors are completed.
- E 1 indicates irradiation quantity at the time of the entire surface exposure
- E 1 ′ indicates irradiation quantity in which quantity of reflected light from the semiconductor substrate 1 surface is added to the irradiation quantity at the time of the entire surface exposure
- E 1 ′′ indicates irradiation quantity in which quantity of reflected light from the light shielding film 3 is added to irradiation quantity at the time of the entire surface exposure.
- E 2 indicates irradiation quantity when photomasks 6 , 9 are used
- E 2 ′ indicates irradiation quantity in which E 1 ′′ is added to the irradiation quantity when the photomasks 6 , 9 are used.
- E 1 , E 1 ′ are set so that they fall within the area where the remaining film ratio does not suddenly decreases while setting E 1 ′′, E 2 , E 2 ′ so that they have the condition where the remaining film ratio of resist becomes nearly equal to zero.
- the exposure/development processing is carried out under such a setting the color filter pattern end portion is in alignment with the pattern end portion of the light shielding film 3 substantially in self-alignment state. For this reason, filter patterns of three colors can be formed without allowing positional shift of the pattern to take place. Thus, the problem that the color reproducibility is degraded by pattern positional shift does not take place.
- this invention can be similarly applied to the color filter formation process of the linear sensor.
- the color filter pattern is formed by the dyeing layer
- this invention can be applied to formation of the lens layer.
- the lens layer can be formed by the entire surface exposure.
- the color filter pattern end portion is in alignment with the pattern end portion of the light shielding film 3 substantially by the self-alignment. For this reason, filter patterns of three colors can be formed without allowing positional shift of the pattern to take plate. Thus, the problem that color reproducibility is degraded by the pattern positional shift does not take place.
Abstract
A solid-state imaging device provided with color filter in which process margin with respect to color reproducibility at the time of production is increased. This solid-state imaging device includes a semiconductor substrate, light shielding films formed so as to define light opening portions by material of light shielding characteristic above the semiconductor substrate, and color filters formed, in a manner to correspond to the light opening portions, above the light shielding films so that respective end portions thereof are correspondingly positioned within the regions where the light shielding films are respectively formed. In addition, a method of manufacturing such a solid-state imaging device, has the steps of forming a first insulating film on a semiconductor substrate, allowing light shielding material to selectively remain within regions where light shielding films are to be respectively formed on the first insulating film to form the light shielding films, forming a second insulating film in this state, and selectively forming a color filter layer on the second insulating film so as to cover the opening portion surrounded by the light shielding films and to allow the respective end portions to be positioned on the regions where the light shielding films are respectively formed to repeat the above-mentioned process steps to produce solid-state imaging device provided with, e.g., color filters of three colors.
Description
- This invention relates to a solid-state imaging (image pick-up) device and a method of manufacturing the same, and more particularly to a solid-state imaging device of the structure comprising color filter and a dyeing layer process in a color filter production process suitable when applied thereto.
- The configuration of a conventional solid-state imaging device will now be described with reference to FIGS.3-5. As shown in FIG. 3, this solid-state imaging device comprises: groups of
pixels 51 to 53 two-dimensionally arranged on a semiconductor substrate; verticalCCD shift registers 54 to 56 respectively disposed between these groups ofpixels 51 to 53, and adapted for transferring, in a vertical direction, signal charges produced in the pixels after undergone photoelectric conversion and stored therein; ahorizontal CCD register 57 adjacently disposed at the lower end portion of the verticalCCD shift registers 54 to 56, and adapted for reading out, in a horizontal direction, signal charges of the verticalCCD shift registers 54 to 56, and anoutput circuit 58 disposed at the terminating end of the horizontalCCD shift register 57. - This solid-state imaging device is manufactured as follows. Initially, an
insulating film 62 is formed on asemiconductor substrate 61 so as to includetransfer electrodes 63, 64 (see FIG. 4C) of the verticalCCD shift registers 54 to 56 to formlight shielding films 65 on theinsulating film 62 so that they are positioned immediately above thetransfer electrodes protective film 66 so as to cover thelight shielding films 65. Then, a firstcolor filter pattern 67 is formed on theprotective film 66. In this case, the firstcolor filter pattern 67 is formed by coating resist for color filter onto theprotective film 66 to carry out mask pattern transfer at a predetermined position with respect to thelight shielding films 65 to implement the development processing thereto (FIG. 4A). - Thereafter, similar process is carried out for a second time to respectively form a second color filter pattern68 (FIG. 4B) and a third color filter pattern 69 (FIG. 4C).
- However, with the such conventional manufacturing method, the problem that the color picture characteristic is degraded took place.
- Namely, there were instances where, as shown in FIG. 5A, e.g., the first
color filter pattern 67 is positionally shifted to the left side with respect to thelight shielding film 65 so that gap takes place between the firstcolor filter pattern 67 and thelight shielding film 65 of the right side. In such a case, any shift (difference from the ideal characteristic) takes place in the spectral characteristic by the dyeing (coloring) pattern of the firstcolor filter pattern 67. For this ten, unsatisfactory color reproducibility takes place, thus degrading the color picture characteristic to much degree. - Moreover, in a state as described above, as shown in FIG. 5B, there are instances where the third
color filter pattern 69 takes a form riding onto the firstcolor filter pattern 67 as indicated bycolor filter pattern 69′ although it is not admitted into the adjacent pixel region. As a result, thick portions locally take place. Thus, any shift would similarly takes place in the spectral characteristic of the firstcolor filter pattern 67. - Further, with miniaturization of the device, the width of the
light shielding film 65 between pixels becomes smaller. As a result, with the prior art, the problem that process margin cannot be taken takes place. - This invention has been made in view of the problems with the prior art, and its object is to provide a solid-state imaging device of the structure comprising color filter, and a color filter formation process suitable when applied thereto, in which the pattern end portion position of the color filter pattern is determined by the self-alignment with respect to the light shielding film so that the process margin with respect to the color reproducibility is increased.
- A solid-state imaging device of this invention comprises: a semiconductor substrate, light shielding films formed so as to define light opening portions by a material of light shielding characteristic above the semiconductor substrate; and color filter layers formed above the light shielding films, and such that they are caused to correspond to the light opening portions and respective end portions thereof are positioned within regions corresponding to regions where the light shielding films are respectively formed.
- Transfer electrodes are preferably respectively provided below the light shielding films in a more practical sense.
- One of the color filter layers is preferably formed on a certain region where the light shielding film is formed in the state where a gap is held between the end portion thereof and that of the other color filter layer adjacent thereto.
- Moreover, a method of manufacturing a solid-state imaging device of this invention comprises the steps of: forming a first insulating film on a semiconductor substrate; allowing a material of light shielding characteristic to selectively remain within regions where light shielding films are to be respectively formed on the first insulating film to form the light shielding films; forming a second insulating film in this state; selectively forming a color filter layer on the second insulating film so as to cover an opening portion surrounded by the light shielding films and to allow respective end portions thereof to be positioned on the regions where the light shielding films are respectively formed.
- Formation of the color filter layer is repeatedly carried out with respect to plural colors.
- It is desirable to set light irradiation quantity so that the remaining film ratio (percentage) of the portion positioned on the light shielding film of resist constituting the color filter layer is lower than the remaining film ratio (percentage) of the portion positioned on the light opening portion.
- In the accompanying drawings:
- FIGS.1A-1G are device cross sectional views every process steps showing a manufacturing process of a solid-state imaging device according to an embodiment of this invention;
- FIG. 2 is a graph showing exposure/development characteristic of resist (remaining film ratio with respect to the exposure quantity (=film thickness after development/film thickness before development); and
- FIG. 3 is a plan view showing outline of the configuration of a conventional solid-state imaging device,
- FIGS.4A-4C are device cross sectional views every process steps showing a manufacturing process thereof, and
- FIGS. 5A and 5B are cross sectional views for explaining the problems of the manufacturing process for the conventional solid-state imaging device.
- Preferred embodiments of this invention will now be described with reference to the attached drawings. FIGS.1A-1G are device cross sectional views every process steps showing a manufacturing process of a solid-state imaging device according to an embodiment of this invention. In FIG. 1A, an
insulating film 2 is first formed so as to include transfer electrodes of vertical CCD shift register (not shown) on asemiconductor substrate 1 comprised of, e.g., silicon to form, on theinsulating film 2,light shielding films 3 by material having high reflection factor (e.g., Al) so that they are positioned immediately (directly) above the transfer electrodes thereafter to stack aprotective film 4 on the entire surface thereof Thereafter, aresist 5 serving as color filter material of the positive type is coated onto the entire surface of theprotective film 4. - Subsequently, as shown in FIG. 1B, the
resist 5 is exposed to light by the entire surface exposure. In this instance, since metal like Al is ordinarily used as thelight shielding film 3, this light shielding film has metal gloss. On the other hand, silicon is ordinarily used for thesemiconductor substrate 1 as described above. An incident light is admitted (entered) into thesubstrate 1, and the reflected component thereof is smaller than the reflected component from thelight shielding film 3. As a result, by setting of the light irradiation quantity which will be described later, each portion positioned on thelight shielding film 3 in theresist 5 is removed to more degree than other portions, or only the portion positioned on thelight shielding film 3 is slightly removed so that it is caused to be of the thin film structure. Arrows in the figure indicate action of light such as irradiated light and reflected light, etc. - Then, as shown in FIG. 1C, in order to allow a predetermined potion except for the region where color filter is to be formed to be exposed to light, the
resist 5 portion corresponding to the portion except for the shield pattern of aphotomask 6 is exposed to light. By carrying out development in such a state, as shown in FIG. 1D, only the portion overlapping with the pattern of thephotomask 6 at the portion except for thelight shielding films 3 is left as afilter pattern 7. Thus, the portions positioned on thelight shielding films 3 of theresist 5 are completely removed. Then, thisfilm pattern 7 is dyed (colored) by a predetermined dyeing material to complete the color filter of one color. - Similarly, as shown in FIG. 1E, a
resist 8 serving as filter material of the other color is coated to allow the entire surface thereof to be exposed to light. - Then, a
photomask 9 is provided as shown in FIG. 1F to allow the portion except for the region where the filter pattern is to be formed to be exposed to light. - Thereafter, development is carried out to form a
film pattern 10 and thefilter pattern 10 is then dyed (colored). - Similarly, a filter pattern11 of the remaining color is formed as shown in FIG. 1G. Thus,
filter patterns - FIG. 2 is the exposure/development characteristic of resist, and shows the characteristic curve of the remaining film ratio with respect to the exposure quantity (=film thickness after development/film thickness before development). It is seen from this characteristic curve that the remaining film ratio suddenly changes with a certain (predetermined) exposure quantity being as the boundary. In this figure, E1 indicates irradiation quantity at the time of the entire surface exposure, E1′ indicates irradiation quantity in which quantity of reflected light from the
semiconductor substrate 1 surface is added to the irradiation quantity at the time of the entire surface exposure, and E1″ indicates irradiation quantity in which quantity of reflected light from thelight shielding film 3 is added to irradiation quantity at the time of the entire surface exposure. In addition, E2 indicates irradiation quantity whenphotomasks photomasks - The key point in this invention is that E1, E1′ are set so that they fall within the area where the remaining film ratio does not suddenly decreases while setting E1″, E2, E2′ so that they have the condition where the remaining film ratio of resist becomes nearly equal to zero. When the exposure/development processing is carried out under such a setting the color filter pattern end portion is in alignment with the pattern end portion of the
light shielding film 3 substantially in self-alignment state. For this reason, filter patterns of three colors can be formed without allowing positional shift of the pattern to take place. Thus, the problem that the color reproducibility is degraded by pattern positional shift does not take place. - While the process according to the embodiment of this invention has been described, several modified examples may be employed in addition to the above in this invention.
- For example, this invention can be similarly applied to the color filter formation process of the linear sensor.
- In addition, while it has been only described that the color filter pattern is formed by the dyeing layer, this invention can be applied to formation of the lens layer. Particularly, since there is no dyeing layer on the light shielding film, the lens layer can be formed by the entire surface exposure.
- As described above, in accordance with this invention, by setting of the condition of respective light irradiation quantities at the time of exposure/development processing in the entire surface exposure and the exposure in which photomask is used, the color filter pattern end portion is in alignment with the pattern end portion of the
light shielding film 3 substantially by the self-alignment. For this reason, filter patterns of three colors can be formed without allowing positional shift of the pattern to take plate. Thus, the problem that color reproducibility is degraded by the pattern positional shift does not take place.
Claims (5)
1. A solid-state imaging device comprising:
a semiconductor substrate;
light shielding films formed so as to define light opening portions by a material of light shielding characteristic above the semiconductor substrate; and
color filter layers formed above the light shielding films, and such that they are caused to correspond to the light opening portions and respective end portions thereof are positioned within regions corresponding to regions where the light shielding films are respectively formed.
2. A solid-state imaging device as set forth in ,
claim 1
wherein transfer electrodes are respectively provided below the light shielding films.
3. A solid-state imaging device as set forth in ,
claim 1
wherein one of the color filter layers is formed on a certain one of the regions where the light shielding films are respectively formed in the state where a gap is held between the end portion thereof and that of the other color filter layer adjacent thereto.
4. A method of manufacturing a solid-state imaging device, comprising the steps of:
forming a first insulating film on a semiconductor substrate;
allowing a material of light shielding characteristic to selectively remain within regions where light shielding films are to be respectively formed on the first insulating film to form the light shielding films;
forming a second insulating film in this state; and
selectively forming a color filter layer on the second insulating film so as to cover an opening portion surrounded by the light shielding films and to allow respective end portions thereof to be positioned on the regions where the light shielding films are respectively formed.
5. A method of manufacturing a solid-state imaging device as set forth in ,
claim 4
wherein formation of the color filter layer is repeatedly carried out with respect to plural colors.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP253094/1995 | 1995-09-29 | ||
JP25309495A JP3308778B2 (en) | 1995-09-29 | 1995-09-29 | Method for manufacturing solid-state imaging device |
JP7-253094 | 1995-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010039070A1 true US20010039070A1 (en) | 2001-11-08 |
US6429038B2 US6429038B2 (en) | 2002-08-06 |
Family
ID=17246416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/720,003 Expired - Fee Related US6429038B2 (en) | 1995-09-29 | 1996-09-27 | Solid-state imaging device and method of manufacturing the same |
Country Status (2)
Country | Link |
---|---|
US (1) | US6429038B2 (en) |
JP (1) | JP3308778B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110042767A1 (en) * | 2009-08-17 | 2011-02-24 | Stmicroelectronics (Research & Development) Limited | Filters in an image sensor |
US9862041B2 (en) | 2009-08-14 | 2018-01-09 | Saint-Gobain Abrasives, Inc. | Abrasive articles including abrasive particles bonded to an elongated body |
US9902044B2 (en) | 2012-06-29 | 2018-02-27 | Saint-Gobain Abrasives, Inc. | Abrasive article and method of forming |
US10509521B2 (en) * | 2015-03-30 | 2019-12-17 | Japan Display Inc. | Input device and display device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL123207A0 (en) | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
KR100707072B1 (en) * | 2001-06-30 | 2007-04-13 | 매그나칩 반도체 유한회사 | The method for fabrication of color filter in image sensor |
JP4322166B2 (en) * | 2003-09-19 | 2009-08-26 | 富士フイルム株式会社 | Solid-state image sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0812904B2 (en) * | 1990-11-30 | 1996-02-07 | 三菱電機株式会社 | Method of manufacturing solid-state image sensor |
JPH04334056A (en) * | 1991-05-09 | 1992-11-20 | Toshiba Corp | Solid state image sensing device and its manufacture |
US5631753A (en) * | 1991-06-28 | 1997-05-20 | Dai Nippon Printing Co., Ltd. | Black matrix base board and manufacturing method therefor, and liquid crystal display panel and manufacturing method therefor |
US5466612A (en) * | 1992-03-11 | 1995-11-14 | Matsushita Electronics Corp. | Method of manufacturing a solid-state image pickup device |
DE69320113T2 (en) * | 1992-05-22 | 1999-03-11 | Matsushita Electronics Corp | Solid state image sensor and method for its production |
US5693967A (en) * | 1995-08-10 | 1997-12-02 | Lg Semicon Co., Ltd. | Charge coupled device with microlens |
US5708264A (en) * | 1995-11-07 | 1998-01-13 | Eastman Kodak Company | Planar color filter array for CCDs from dyed and mordant layers |
US5677202A (en) * | 1995-11-20 | 1997-10-14 | Eastman Kodak Company | Method for making planar color filter array for image sensors with embedded color filter arrays |
-
1995
- 1995-09-29 JP JP25309495A patent/JP3308778B2/en not_active Expired - Fee Related
-
1996
- 1996-09-27 US US08/720,003 patent/US6429038B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9862041B2 (en) | 2009-08-14 | 2018-01-09 | Saint-Gobain Abrasives, Inc. | Abrasive articles including abrasive particles bonded to an elongated body |
US20110042767A1 (en) * | 2009-08-17 | 2011-02-24 | Stmicroelectronics (Research & Development) Limited | Filters in an image sensor |
US9902044B2 (en) | 2012-06-29 | 2018-02-27 | Saint-Gobain Abrasives, Inc. | Abrasive article and method of forming |
US10509521B2 (en) * | 2015-03-30 | 2019-12-17 | Japan Display Inc. | Input device and display device |
Also Published As
Publication number | Publication date |
---|---|
JP3308778B2 (en) | 2002-07-29 |
US6429038B2 (en) | 2002-08-06 |
JPH0997887A (en) | 1997-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0124025B1 (en) | Solid-state color imaging device and process for fabricating the same | |
US5266501A (en) | Method for manufacturing a solid state image sensing device using transparent thermosetting resin layers | |
US4565756A (en) | Color imaging device | |
US6136481A (en) | Color filter manufacturing method capable of assuring a high alignment accuracy of color filter and alignment mark therefor | |
US4339514A (en) | Process for making solid-state color imaging device | |
US5135891A (en) | Method for forming film of uniform thickness on semiconductor substrate having concave portion | |
US6429038B2 (en) | Solid-state imaging device and method of manufacturing the same | |
KR960000905B1 (en) | Charge coupled device and the making method | |
EP0040984B1 (en) | Method of producing solid-state color imaging devices | |
US4786819A (en) | Method of fabricating a contact type color image sensor | |
JP2722587B2 (en) | Pattern formation method | |
JPH06140610A (en) | Solid-state image pick-up device and its manufacture | |
JPH10209410A (en) | Manufacture of solid-state image pick up element | |
JPH0250441B2 (en) | ||
KR100442294B1 (en) | Image Sensor | |
JP2951942B1 (en) | Method for manufacturing solid-state imaging device | |
JPH03181168A (en) | Color solid state image sensor element | |
KR100351910B1 (en) | image sensor and method for manufacturing the same | |
US20020127481A1 (en) | Method of forming color filter array | |
JPS6336203A (en) | Solid-state color image pickup element and its production | |
KR100192321B1 (en) | The structure of solid-state image sensing device and manufacturing method thereof | |
CA1189199A (en) | Process for making solid-state color imaging device | |
JPH04268763A (en) | Method of forming on-chip microlens | |
JP2558854B2 (en) | Color solid-state imaging device | |
EP0090865A1 (en) | Process for making solid-state color image device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SEKINE, HIROKAZU;REEL/FRAME:008237/0808 Effective date: 19960919 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20100806 |