US20010028240A1 - Regulator - Google Patents

Regulator Download PDF

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US20010028240A1
US20010028240A1 US09/778,237 US77823701A US2001028240A1 US 20010028240 A1 US20010028240 A1 US 20010028240A1 US 77823701 A US77823701 A US 77823701A US 2001028240 A1 US2001028240 A1 US 2001028240A1
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load current
current
frequency
load
regulator
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US6420857B2 (en
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Atsuo Fukui
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Ablic Inc
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/618Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series and in parallel with the load as final control devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor

Definitions

  • the present invention relates to phase compensation for providing a transient response characteristic which does not depend on load current of a regulator.
  • FIG. 4 shows a constitution of a conventional regulator.
  • a reference voltage power supply 201 supplies constant voltage Vref to an inverted input terminal of a transconductance amplifier 202 .
  • An output of the transconductance amplifier 202 is connected to the gate of a PMOS output driver transistor 204 and a phase compensating RC network 203 constituted by a resistor 208 and a capacitor 209 .
  • the source of the PMOS output driver transistor 204 is connected to an input terminal IN and the drain is connected to an output terminal OUT.
  • the output terminal OUT is connected with a load resistor 207 and a capacitor 206 and a voltage dividing circuit 205 constituted by resistors 210 and 211 .
  • the voltage dividing circuit 205 supplies voltage produced by dividing output voltage VOUT to a noninverting input terminal of the transconductance amplifier.
  • Equation (2) in accordance with a variation in the load resistor 207 , the frequency fp of the pole is also changed. Meanwhile, as is apparent from Equation (1), the frequency fz of the zero point for phase compensation is a fixed value.
  • FIG. 5 shows frequency characteristics of the regulator when the load current is large and when the load current is small.
  • a frequency of a zero point for phase compensation is varied.
  • An improvement is carried out by varying the frequency of the zero point for phase compensation in accordance with the load current, thereby, a variation in a frequency band of a regulator is restrained without depending upon the load current such that transient response does not depend upon the load current.
  • FIG. 1 is a circuit diagram of a regulator according to a first embodiment of the invention
  • FIG. 2 is a circuit diagram of a regulator according to a second embodiment of the invention.
  • FIG. 3 is a diagram of frequency characteristics of the regulator according to the second embodiment of the invention.
  • FIG. 4 is a circuit diagram of a regulator of a related art.
  • FIG. 5 is a diagram of frequency characteristics of the regulator of the related art.
  • FIG. 1 shows a regulator according to a first embodiment of the invention.
  • the reference voltage power supply 201 supplies the constant voltage Vref to the inverted input terminal of the transconductance amplifier 202 .
  • the output of the transconductance amplifier 202 is connected to the gate of the PMOS output driver transistor 204 , the gate of a load current detecting PMOS transistor 212 and a phase compensation RC network 203 constituted by the capacitor 209 and a variable resistance portion 215 .
  • the source of the PMOS output driver transistor 204 is connected to the input terminal IN and the drain is connected to the output terminal OUT.
  • the output terminal OUT is connected with the load resistor 207 , the capacitor 206 and the voltage dividing circuit 205 constituted by the resistors 210 and 211 .
  • the voltage dividing circuit 205 supplies voltage produced by dividing the output voltage VOUT to the noninverted input terminal of the transconductance amplifier.
  • the source of the load current detecting PMOS transistor 212 is connected to the input terminal IN and the drain is connected to the variable resistance portion 215 .
  • the drain current I 204 of the output driver transistor 204 is current supplied to load and accordingly, the drain current I 212 of the load current detecting transistor 212 becomes current in proportion to the load current and the proportional coefficient is given from Equation (3) as follows. W212 / L212 W204 / L204 ( 4 )
  • An arbitrary proportional coefficient can be set by pertinently adjusting gate sizes of the transistors 204 and 212 .
  • the drain current I 212 in proportion to the load current, outputted from the load current detecting transistor 212 is inputted to the variable resistance portion 215 .
  • the variable resistance portion 215 changes a resistance value thereof in accordance with inputted current.
  • FIG. 2 shows an embodiment further specifying the variable resistance portion 215 .
  • the variable resistance portion 215 is constituted by a resistor 213 and an NMOS transistor 214 .
  • the resistor 213 By flowing the drain current I 212 outputted from the load current detecting transistor 212 and in proportion to the load current and current I 216 outputted from a constant current source 216 , in the resistor 213 , voltage is generated across both ends of the resistor 213 .
  • ON resistance of the NMOS transistor 214 is changed.
  • the constant current source 216 operates such that the NMOS transistor 214 is not brought into a nonconductive state even when the drain current I 212 of the load current detecting transistor 212 becomes null.
  • the frequency of the zero point for phase compensation is varied.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Voltage And Current In General (AREA)

Abstract

To provide a regulator for restraining a variation in a frequency band and having a transient response characteristic which does not depend upon load current, by generating current in proportion to load current by a load current detecting transistor connected in parallel with an output driver transistor for supplying current to a load and changing a resistance value of a variable resistance portion by the current, a frequency of a zero point for phase compensation is varied and by varying the frequency of the zero point for phase compensation in accordance with the load current, the variation in the frequency band of the regulator is restrained without depending upon the load current and the transient response characteristic is improved.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to phase compensation for providing a transient response characteristic which does not depend on load current of a regulator. [0002]
  • 2. Description of the Related Art [0003]
  • FIG. 4 shows a constitution of a conventional regulator. A reference [0004] voltage power supply 201 supplies constant voltage Vref to an inverted input terminal of a transconductance amplifier 202. An output of the transconductance amplifier 202 is connected to the gate of a PMOS output driver transistor 204 and a phase compensating RC network 203 constituted by a resistor 208 and a capacitor 209. The source of the PMOS output driver transistor 204 is connected to an input terminal IN and the drain is connected to an output terminal OUT. The output terminal OUT is connected with a load resistor 207 and a capacitor 206 and a voltage dividing circuit 205 constituted by resistors 210 and 211. The voltage dividing circuit 205 supplies voltage produced by dividing output voltage VOUT to a noninverting input terminal of the transconductance amplifier.
  • When a resistance value of the [0005] resistor 208 constituting the phase compensation RC network 203 is designated by notation R208 and a capacitance value of the capacitor 209 is designated by notation C209, frequency fz of a zero point for phase compensation constituted by R208 and C209, is calculated by the following equation. fz = 1 2 π · R208 · C209 ( 1 )
    Figure US20010028240A1-20011011-M00001
  • When a resistance value of the [0006] load resistor 207 is designated by notation R207 and a capacitance value of the load capacitor 206 is designated by notation C206, frequency fp of a pole constituted thereby is calculated by the following equation. fp = 1 2 π · R207 · C206 ( 2 )
    Figure US20010028240A1-20011011-M00002
  • As is apparent from Equation (2), in accordance with a variation in the [0007] load resistor 207, the frequency fp of the pole is also changed. Meanwhile, as is apparent from Equation (1), the frequency fz of the zero point for phase compensation is a fixed value.
  • When load current is large, the [0008] load resistor 207 becomes small and accordingly, by Equation (2), the frequency fp of the pole is moved to a high frequency side. Further, when the load current is small, the load resistor 207 becomes large and accordingly, by Equation (2), the frequency fp of the pole is moved to a low frequency side. FIG. 5 shows frequency characteristics of the regulator when the load current is large and when the load current is small.
  • As shown by FIG. 5, when the load current is large, unity gain frequency at which voltage gain of the regulator becomes [0009] 1, becomes high, conversely, when the load current is small, the unity gain frequency becomes low. When the unity gain frequency is changed by the load current in this way, the transient response characteristic depends on the load current, which is not preferable. Particularly, when the load current is small, the unity gain frequency is low and accordingly, the transient response characteristic is deteriorated.
  • SUMMARY OF THE INVENTION
  • In order to resolve the above-described problem, according to the invention, there is carried out an improvement in which by varying a frequency of a zero point for phase compensation in accordance with load current, a variation in a frequency band of a regulator is restrained such that transient response does not depend upon the load current. [0010]
  • According to the invention, by generating current in proportion to load current by a load current detecting transistor connected in parallel with an output driver transistor for supplying current to a load and changing a resistance value of a variable resistance portion by the current, a frequency of a zero point for phase compensation is varied. [0011]
  • An improvement is carried out by varying the frequency of the zero point for phase compensation in accordance with the load current, thereby, a variation in a frequency band of a regulator is restrained without depending upon the load current such that transient response does not depend upon the load current.[0012]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a circuit diagram of a regulator according to a first embodiment of the invention; [0013]
  • FIG. 2 is a circuit diagram of a regulator according to a second embodiment of the invention; [0014]
  • FIG. 3 is a diagram of frequency characteristics of the regulator according to the second embodiment of the invention. [0015]
  • FIG. 4 is a circuit diagram of a regulator of a related art; and [0016]
  • FIG. 5 is a diagram of frequency characteristics of the regulator of the related art.[0017]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • An explanation will be given of embodiments of the invention in reference to the drawings as follows. [0018]
  • FIG. 1 shows a regulator according to a first embodiment of the invention. The reference [0019] voltage power supply 201 supplies the constant voltage Vref to the inverted input terminal of the transconductance amplifier 202. The output of the transconductance amplifier 202 is connected to the gate of the PMOS output driver transistor 204, the gate of a load current detecting PMOS transistor 212 and a phase compensation RC network 203 constituted by the capacitor 209 and a variable resistance portion 215. The source of the PMOS output driver transistor 204 is connected to the input terminal IN and the drain is connected to the output terminal OUT. The output terminal OUT is connected with the load resistor 207, the capacitor 206 and the voltage dividing circuit 205 constituted by the resistors 210 and 211. The voltage dividing circuit 205 supplies voltage produced by dividing the output voltage VOUT to the noninverted input terminal of the transconductance amplifier. The source of the load current detecting PMOS transistor 212 is connected to the input terminal IN and the drain is connected to the variable resistance portion 215.
  • When a gate width of the [0020] output driver transistor 204 is designated by notation W204, a gate length thereof is designated by L204, a gate width of the load current detecting transistor 212 is designated by W212 and a gate length thereof is designated by notation L212. Further, when drain current of the output driver transistor 204 is designated by notation I204 and drain current of the load current detecting transistor 212 is designated by notation I212, the following relationship is established. I212 = W212 / L212 W204 / L204 · I204 ( 3 )
    Figure US20010028240A1-20011011-M00003
  • The drain current I[0021] 204 of the output driver transistor 204 is current supplied to load and accordingly, the drain current I212 of the load current detecting transistor 212 becomes current in proportion to the load current and the proportional coefficient is given from Equation (3) as follows. W212 / L212 W204 / L204 ( 4 )
    Figure US20010028240A1-20011011-M00004
  • An arbitrary proportional coefficient can be set by pertinently adjusting gate sizes of the [0022] transistors 204 and 212.
  • In accordance with the Equation (3), the drain current I[0023] 212 in proportion to the load current, outputted from the load current detecting transistor 212 is inputted to the variable resistance portion 215. The variable resistance portion 215 changes a resistance value thereof in accordance with inputted current.
  • FIG. 2 shows an embodiment further specifying the [0024] variable resistance portion 215. The variable resistance portion 215 is constituted by a resistor 213 and an NMOS transistor 214. By flowing the drain current I212 outputted from the load current detecting transistor 212 and in proportion to the load current and current I216 outputted from a constant current source 216, in the resistor 213, voltage is generated across both ends of the resistor 213. By the voltage generated across the both ends of the resistor 213, ON resistance of the NMOS transistor 214 is changed. Further, the constant current source 216 operates such that the NMOS transistor 214 is not brought into a nonconductive state even when the drain current I212 of the load current detecting transistor 212 becomes null.
  • As described above, ON resistance of the [0025] NMOS transistor 214 operating as phase compensation resistor is changed in accordance with the load current and accordingly, from Equation (1), the frequency fz of the zero point for phase compensation is also changed. The frequency characteristics of the regulator become as shown by FIG. 3 and even when the load current is changed, by restraining a variation in the unity gain frequency, the frequency characteristic of the regulator is improved such that transient response does not depend upon the load current.
  • According to the invention, by generating current in proportion to the load current by the load current detecting transistor connected in parallel with the output driver transistor for supplying current to the load and changing the resistance value of the variable resistance portion by the current, the frequency of the zero point for phase compensation is varied. [0026]

Claims (2)

What is claimed is:
1. A circuit characterized in providing a transient response characteristic which does not depend upon load current by restraining a variation in a frequency band of a regulator by load current by changing a frequency of a zero point for phase compensation by changing a resistance value of a phase compensation RC network in accordance with the load current in the regulator.
2. A regulator comprising:
a load current detecting transistor connected in parallel with an output driver transistor for supplying current to a load;
a phase compensation RC network connected to an output end of the output driver transistor; and
a variable resistor of the phase compensation RC network connected to an output end of the load current detecting transistor.
US09/778,237 2000-03-31 2001-02-07 Regulator Expired - Lifetime US6420857B2 (en)

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US20020066793A1 (en) * 2000-10-31 2002-06-06 Joji Hayashi Power supply circuit and RF transponder IC
EP1806640A2 (en) * 2005-12-30 2007-07-11 STMicroelectronics Pvt. Ltd. A low dropout regulator (LDO)
US20090302811A1 (en) * 2008-06-09 2009-12-10 Yotaro Nihei Voltage regulator
US20100148742A1 (en) * 2008-12-11 2010-06-17 Nec Electronics Corporation Voltage regulator
US20110057633A1 (en) * 2009-09-07 2011-03-10 Renesas Electronics Corporation Load driving circuit
EP2520998A1 (en) * 2011-05-03 2012-11-07 Dialog Semiconductor GmbH Flexible load current dependent feedback compensation for linear regulators utilizing ultra-low bypass capacitances
TWI557530B (en) * 2012-03-08 2016-11-11 Sii Semiconductor Corp Voltage regulator
DE102017223082A1 (en) * 2017-12-18 2019-06-19 Dialog Semiconductor (Uk) Limited Voltage regulator and method for compensating the effects of output impedance
US11550349B2 (en) 2018-10-31 2023-01-10 Rohm Co., Ltd. Linear power supply circuit
US12009739B2 (en) 2021-09-24 2024-06-11 Kabushiki Kaisha Toshiba Power supply circuit with high speed response to large rush voltage in power supply

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* Cited by examiner, † Cited by third party
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FR2819064B1 (en) * 2000-12-29 2003-04-04 St Microelectronics Sa VOLTAGE REGULATOR WITH IMPROVED STABILITY
US6518737B1 (en) 2001-09-28 2003-02-11 Catalyst Semiconductor, Inc. Low dropout voltage regulator with non-miller frequency compensation
US6690147B2 (en) * 2002-05-23 2004-02-10 Texas Instruments Incorporated LDO voltage regulator having efficient current frequency compensation
JP2004062374A (en) * 2002-07-26 2004-02-26 Seiko Instruments Inc Voltage regulator
US6842068B2 (en) * 2003-02-27 2005-01-11 Semiconductor Components Industries, L.L.C. Power management method and structure
TWI237168B (en) * 2003-05-20 2005-08-01 Mediatek Inc Low noise fast stable voltage regulator circuit
CN100373281C (en) * 2003-06-05 2008-03-05 联发科技股份有限公司 Low-noise rapid stabilizing stabilized circuit
US7038431B2 (en) * 2003-08-07 2006-05-02 Jamel Benbrik Zero tracking for low drop output regulators
JP4467963B2 (en) * 2003-12-03 2010-05-26 株式会社東芝 Regulator device and backflow prevention diode circuit used therefor
JP2005260658A (en) * 2004-03-12 2005-09-22 Nec Electronics Corp Semiconductor device
JP2005327256A (en) * 2004-04-15 2005-11-24 Ricoh Co Ltd Constant voltage circuit
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CN101038497B (en) * 2006-03-17 2010-09-29 深圳赛意法微电子有限公司 Compensation method, compensated regulator and electronic circuit
US7521909B2 (en) * 2006-04-14 2009-04-21 Semiconductor Components Industries, L.L.C. Linear regulator and method therefor
JP2008171185A (en) * 2007-01-11 2008-07-24 Toshiba Microelectronics Corp Step-down circuit
JP2007188533A (en) * 2007-04-16 2007-07-26 Ricoh Co Ltd Voltage regulator and phase compensation method of voltage regulator
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JP5594980B2 (en) * 2009-04-03 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル Non-inverting amplifier circuit, semiconductor integrated circuit, and non-inverting amplifier circuit phase compensation method
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CN102111070B (en) * 2009-12-28 2015-09-09 意法半导体研发(深圳)有限公司 The regulator over-voltage protection circuit that standby current reduces
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
JP5715525B2 (en) * 2011-08-05 2015-05-07 セイコーインスツル株式会社 Voltage regulator
JP6038516B2 (en) * 2011-09-15 2016-12-07 エスアイアイ・セミコンダクタ株式会社 Voltage regulator
US9098104B2 (en) * 2013-03-07 2015-08-04 Analog Devices Global Low drop out voltage regulator
CN104750149B (en) * 2013-12-31 2016-09-28 北京兆易创新科技股份有限公司 A kind of low pressure difference linear voltage regulator
JP6555959B2 (en) * 2015-07-24 2019-08-07 エイブリック株式会社 Voltage regulator
US10663993B2 (en) * 2016-07-15 2020-05-26 Qualcomm Incorporated Low-dropout regulator with band-reject power supply rejection ratio for phase locked loop voltage controlled oscillator
JP6740169B2 (en) * 2017-04-25 2020-08-12 株式会社東芝 Power supply
TWI689803B (en) * 2018-12-14 2020-04-01 致茂電子股份有限公司 Power supply and compensating method thereof
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CN111273720B (en) * 2020-03-04 2022-02-22 中国电子科技集团公司第二十四研究所 Compensation zero generation circuit for linear voltage regulator
US11860660B2 (en) * 2021-06-02 2024-01-02 Mediatek Singapore Pte. Ltd. Apparatus and method of performing load transient frequency detection for dynamically managing controllable circuit in voltage regulator

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072880B2 (en) * 1994-06-02 2000-08-07 株式会社アドバンテスト Voltage generator for IC test
US5648718A (en) * 1995-09-29 1997-07-15 Sgs-Thomson Microelectronics, Inc. Voltage regulator with load pole stabilization
JP3442942B2 (en) * 1996-10-08 2003-09-02 シャープ株式会社 Output drive circuit of DC stabilized power supply circuit

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US6677811B2 (en) * 2000-10-31 2004-01-13 Matsushita Electric Industrial Co., Ltd. Power supply circuit and RF transponder IC
US20020066793A1 (en) * 2000-10-31 2002-06-06 Joji Hayashi Power supply circuit and RF transponder IC
EP1806640A2 (en) * 2005-12-30 2007-07-11 STMicroelectronics Pvt. Ltd. A low dropout regulator (LDO)
EP1806640A3 (en) * 2005-12-30 2008-05-07 STMicroelectronics Pvt. Ltd. A low dropout regulator (LDO)
US8085018B2 (en) * 2008-06-09 2011-12-27 Seiko Instruments Inc. Voltage regulator with phase compensation
US20090302811A1 (en) * 2008-06-09 2009-12-10 Yotaro Nihei Voltage regulator
US8519692B2 (en) * 2008-12-11 2013-08-27 Renesas Electronics Corporation Voltage regulator
US20100148742A1 (en) * 2008-12-11 2010-06-17 Nec Electronics Corporation Voltage regulator
US20110057633A1 (en) * 2009-09-07 2011-03-10 Renesas Electronics Corporation Load driving circuit
EP2520998A1 (en) * 2011-05-03 2012-11-07 Dialog Semiconductor GmbH Flexible load current dependent feedback compensation for linear regulators utilizing ultra-low bypass capacitances
TWI557530B (en) * 2012-03-08 2016-11-11 Sii Semiconductor Corp Voltage regulator
DE102017223082A1 (en) * 2017-12-18 2019-06-19 Dialog Semiconductor (Uk) Limited Voltage regulator and method for compensating the effects of output impedance
US10503188B2 (en) 2017-12-18 2019-12-10 Dialog Semiconductor (Uk) Limited Voltage regulator and method for compensating the effects of an output impedance
US11550349B2 (en) 2018-10-31 2023-01-10 Rohm Co., Ltd. Linear power supply circuit
US12009739B2 (en) 2021-09-24 2024-06-11 Kabushiki Kaisha Toshiba Power supply circuit with high speed response to large rush voltage in power supply

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KR20010095164A (en) 2001-11-03
HK1041322B (en) 2009-06-12
US6420857B2 (en) 2002-07-16
CN1320852A (en) 2001-11-07
CN100403207C (en) 2008-07-16
JP2001282372A (en) 2001-10-12
KR100655203B1 (en) 2006-12-08
HK1041322A1 (en) 2002-07-05

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Free format text: CHANGE OF NAME;ASSIGNOR:SII SEMICONDUCTOR CORPORATION;REEL/FRAME:045567/0927

Effective date: 20180105